U.S. patent number 10,468,628 [Application Number 15/920,341] was granted by the patent office on 2019-11-05 for organic light-emitting diode display.
This patent grant is currently assigned to SAMSUNG DISPLAY CO., LTD.. The grantee listed for this patent is Samsung Display Co., Ltd.. Invention is credited to Deukjong Kim, Sunyoul Lee.
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United States Patent |
10,468,628 |
Kim , et al. |
November 5, 2019 |
Organic light-emitting diode display
Abstract
An organic light-emitting diode display is disclosed. In one
aspect, the display includes a display unit located on the
substrate and including a display area and a non-display area
surrounding the display area, and a thin film encapsulation layer
sealing the display unit. The display also includes a voltage line
formed in the non-display area and surrounding the display area, a
metal layer formed of the same material as the voltage line, and a
dam surrounding the display area and contacting the voltage line.
The voltage line includes a first voltage line disposed in one side
of the display area. The first voltage line includes a pair of
first end portions and a pair of first connectors respectively
connected to the pair of first end portions and extending away from
the display area. The metal layer is disposed between the pair of
first connectors. The dam contacts the metal layer.
Inventors: |
Kim; Deukjong (Yongin-si,
KR), Lee; Sunyoul (Yongin-si, KR) |
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Display Co., Ltd. |
Yongin-si, Gyeonggi-do |
N/A |
KR |
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Assignee: |
SAMSUNG DISPLAY CO., LTD.
(Yongin-Si, Gyeonggi-Do, KR)
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Family
ID: |
57883082 |
Appl.
No.: |
15/920,341 |
Filed: |
March 13, 2018 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20180205037 A1 |
Jul 19, 2018 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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15156232 |
May 16, 2016 |
9954200 |
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Foreign Application Priority Data
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Jul 29, 2015 [KR] |
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10-2015-0107415 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
27/3276 (20130101); H01L 51/5253 (20130101); H01L
29/78678 (20130101); H01L 27/1222 (20130101); H01L
27/1248 (20130101); H01L 27/3246 (20130101); H01L
2227/323 (20130101); H01L 2251/558 (20130101); H01L
27/3258 (20130101); H01L 51/5237 (20130101); H01L
29/78675 (20130101); H01L 27/124 (20130101) |
Current International
Class: |
H01L
51/52 (20060101); H01L 27/32 (20060101); H01L
29/786 (20060101); H01L 27/12 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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2005-78979 |
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Mar 2005 |
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JP |
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2006-114399 |
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Apr 2006 |
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JP |
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4810587 |
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Aug 2011 |
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JP |
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4981101 |
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Apr 2012 |
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JP |
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5989342 |
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Aug 2016 |
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JP |
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10-2010-0047367 |
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May 2010 |
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KR |
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10-2010-0073938 |
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Jul 2010 |
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KR |
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10-2011-0015205 |
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Feb 2011 |
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KR |
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10-2011-0123123 |
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Nov 2011 |
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KR |
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10-1097317 |
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Dec 2011 |
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KR |
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10-2012-0049021 |
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May 2012 |
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KR |
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10-2015-0027407 |
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Mar 2015 |
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KR |
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20-2008-0003962 |
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Sep 2018 |
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KR |
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Other References
Korean Registration Determination Certificate dated Apr. 26, 2017
for Korean Patent Application No. KR 10-2015-0107415 which cites
the above-identified references numbered 5-12, and from which
subject U.S. Appl. No. 15/156,232 claims priority. cited by
applicant.
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Primary Examiner: Shamsuzzaman; Mohammed
Attorney, Agent or Firm: F. Chau & Associates, LLC
Parent Case Text
INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS
This application is a divisional of U.S. patent application Ser.
No. 15/156,232, entitled ORGANIC LIGHT-EMITTING DIODE DISPLAY, and
filed on May 16, 2016, which claims priority from Korean Patent
Application No. 10-2015-0107415, filed on Jul. 29, 2015, in the
Korean Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.
Claims
What is claimed is:
1. An organic light-emitting diode (OLED) display, comprising; a
display unit comprising a display area and a non-display area
surrounding the display area; an OLED and a thin film transistor
(TFT) disposed on the display area; a planarization layer disposed
between the OLED and the TFT; a first voltage line in the
non-display area and arranged to correspond to one side of the
display area, wherein the first voltage line comprises a first side
facing the display area and a second side opposite to the first
side, and a protrusion protruding from the second side; a second
voltage line disposed in the non display area and surrounding at
least three sides of the display area; and a. dam surrounding the
display area, wherein the dam overlaps the protrusion and the
second voltage line on a plan view, wherein the planarization layer
covers the first side of the first voltage line; wherein the
planarization layer extending from the display area is spaced apart
from the dam.
2. The OLED display of claim 1, wherein the dam comprises a
plurality of dams, and wherein the protrusion extends to an
outermost dam.
3. The OLED display of claim 1, wherein the dam comprises a first
dam and a second dam spaced apart from each other, wherein the
first dam surrounds the display area, and wherein the second dam
surrounds the first dam.
4. The OLED display of claim 1, wherein the second voltage line
comprises a pair of second end portions bent to at least partially
surround outer sides of a pair of first end portions of the first
voltage line and a pair of connectors in parallel to the protrusion
and extending from the pair of second end portions.
5. The OLED display of claim 4, wherein the display unit further
comprises a pad unit configured to apply an electrical signal to
the display area, wherein the pad unit is disposed in the
non-display area, and wherein the protrusion and the pair of
connectors is connected to the pad unit.
6. The OLED display of claim 4, wherein a portion of the dam has a
straight line shape and contacts the pair of second end portions of
the second voltage line and the protrusion of the first voltage
line.
7. The OLED display of claim 4, wherein a portion of the dam has a
straight line shape and contacts the pair of second end portions of
the second voltage line and the protrusion of the first voltage
line.
8. The MID display of claim 1, wherein the dam comprises a first
dam and a second dam spaced apart from each other, wherein the
first dam surrounds the display area, and the second dam surrounds
the first dam, wherein the second dam has a height greater than
that of the first dam.
9. The OLED display of claim 1, wherein the TFT comprises a source
electrode and a drain electrode, and wherein the first voltage line
is formed on the same layer as the source and drain electrodes.
10. The OLED display of claim 1, wherein the dam includes a same
layer as the planarization layer.
11. The OLED display of claim 10, wherein the display unit further
includes a pixel-defining layer defining a pixel area, and wherein
the dam comprises a first layer formed on the same layer as the
planarization layer and a second layer formed on the same layer as
the pixel-defining layer.
12. The OLED display of claim 1, wherein the thin film
encapsulation layer is formed of at least one inorganic layer and
at least one organic layer, and wherein the at least one organic
layer is located inside the dam.
13. The OLED display of claim 12, wherein the at least one
inorganic layer has a portion locating outside the dam.
14. The OLED display of claim 1, wherein the second voltage line
comprises a pair of second end portions bent to at least partially
surround outer sides of a pair of first end portions of the first
voltage line and a pair of connectors extending from the pair of
second end portions, and wherein a portion of the dam has a
straight line shape and contacts the pair of second end portions of
the second voltage line and the protrusion of the first voltage
line.
15. The OLED display of claim 1, wherein the display unit further
comprises a pad unit configured to apply an electrical signal to
the display area, wherein the pad unit is disposed in the
non-display area, and wherein the protrusion is connected to the
pad unit.
16. The OLED display of claim 1, wherein the display unit further
comprises a fan out line extending the protrusion and a width of
the fan out line is smaller than a width of the protrusion.
Description
BACKGROUND
Field
The described technology generally relates to an organic
light-emitting diode (OLED) display.
Description of the Related Technology
An OLED display generally includes a hole injection electrode, an
electron injection electrode, and an OLED disposed therebetween.
Excitons are generated when holes emitted from the hole injection
electrode and electrons emitted from the electron injection
electrode combine in the organic emission layer, and these excitons
emit light.
OLED displays are designed to be driven with a low voltage and
manufactured to be light and thin. Also, these displays have
favorable characteristics such as wide viewing angles, high
contrast, and rapid refresh rates and thus have drawn attention as
next-generation display devices. However, since OLED
characteristics are likely to degrade due to environmental
conditions like external moisture, oxygen, etc., the OLEDs should
be protected against the environment.
SUMMARY OF CERTAIN INVENTIVE ASPECTS
One inventive aspect relates to OLED displays.
Another aspect is an OLED display that includes a substrate; a
display unit located on the substrate and including a display area
and a non-display area outside the display area; a thin film
encapsulation layer for sealing the display unit; a voltage line
formed in the non-display area and surrounding the display area;
and a dam unit having at least a part contacting the voltage line,
wherein the voltage line includes a first voltage line disposed to
correspond to one side of the display area, wherein the first
voltage line includes a pair of first end portions and a pair of
first connection units respectively connected to the pair of first
end portions, wherein a metal layer including the same material as
that of the voltage line is disposed between the pair of first
connection units, and wherein the dam unit includes at least two
dams and has at least a part contacting the metal layer.
The dam unit may include a first dam and a second dam that are
spaced apart from each other, wherein the first dam surrounds the
display area, and the second dam surrounds the first dam.
A height of the second dam may be higher than that of the first
dam.
The metal layer may be insulated from the voltage line.
The display unit may include at least one thin film transistor, and
the metal layer may be formed on the same layer as a source
electrode and a drain electrode of the thin film transistor.
The metal layer may be located in a lower portion of the dam
unit.
The display unit may include a thin film transistor, an organic
light-emitting device electrically connected to the thin film
transistor, and a planarization layer disposed between the thin
film transistor and the organic light-emitting device, and the dam
unit is formed on the same layer as the planarization layer.
The display unit further may include a pixel-defining layer
defining a pixel area, and the dam unit may include a first layer
formed on the same layer as the planarization layer and a second
layer formed on the same layer as the pixel-defining layer.
The first layer and the second layer may be integrally formed.
The thin film encapsulation layer may include at least one
inorganic layer and at least one organic layer, and the at least
one organic layer may be located inside the dam unit.
The voltage line may include a second voltage line surrounding the
pair of first end portions and the other sides of the display area,
and the second voltage line may include a pair of second end
portions bent to surround outer sides of the pair of first end
portions and a pair of second end portions in parallel to the pair
of first end portions formed in the pair of second end
portions.
The dam unit may contact the second voltage line outside of the
other sides of the display area, and the dam unit may have a
straight line shape outside of the one side of the display area and
simultaneously contacts the pair of second end portions, the pair
of first connection units, and the metal layer.
The display unit may further include: a pad unit for applying an
electrical signal to the display area, the display unit may be
disposed outside of the one side of the display area, and the pair
of first connection units and the pair of second connection units
may be connected to the pad unit.
The metal layer may be continuously formed with the first voltage
line.
The first voltage line may extend to a dam formed outermost.
The voltage line may include a second voltage line surrounding the
pair of first end portions and the other sides of the display area,
and an outer side of the metal layer and an outer side of the
second voltage line may be located on the same line outside of the
one side of the display area.
The thin film transistor may include an active layer, a gate
electrode, a source electrode, and a drain electrode, a gate
insulating layer may be disposed between the active layer and the
gate electrode, and an interlayer insulating layer may be disposed
between the gate electrode and the source electrode and the drain
electrode, the gate insulating layer and the interlayer insulating
layer may extend to the non-display area, and the thin film
encapsulation layer may include at least one inorganic layer that
contacts the gate insulating layer or the interlayer insulating
layer outside the dam unit.
The at least one inorganic layer may contact a top surface of the
substrate by passing by an end portion of the interlayer insulating
layer.
Another aspect is an organic light-emitting diode (OLED) display,
comprising: a substrate; a display unit located on the substrate
and comprising a display area and a non-display area outside the
display area; a thin film encapsulation layer sealing the display
unit; a voltage line formed in the non-display area and surrounding
the display area; a metal layer formed of the same material as the
voltage line; and a dam having at least a part contacting the
voltage line, wherein the voltage line comprises a first voltage
line disposed in one side of the display area, wherein the first
voltage line comprises a pair of first end portions and a pair of
first connectors respectively connected to the pair of first end
portions and extending away from the display area, wherein the
metal layer is disposed between the pair of first connectors, and
wherein the dam contacts the metal layer.
In the above OLED display, the dam comprises a first dam and a
second dam spaced apart from each other, wherein the first dam
surrounds the display area, and wherein the second dam surrounds
the first dam.
In the above OLED display, the second dam has a height greater than
that of the first dam.
In the above OLED display, the metal layer is electrically
insulated from the voltage line.
In the above OLED display, the display unit comprises at least one
thin film transistor (TFT), wherein the TFT comprises a source
electrode and a drain electrode, and wherein the metal layer is
formed on the same layer as the source and drain electrodes.
In the above OLED display, the metal layer is located below the
dam.
In the above OLED display, the display unit comprises a thin film
transistor (TFT), an OLED electrically connected to the TFT, and a
planarization layer disposed between the TFT and the OLED, wherein
the dam is formed on the same layer as the planarization layer.
In the above OLED display, the display unit further comprises a
pixel-defining layer defining a pixel area, wherein the dam
comprises a first layer formed on the same layer as the
planarization layer and a second layer formed on the same layer as
the pixel-defining layer.
In the above OLED display, the first layer and the second layer are
integrally formed.
the thin film encapsulation layer is formed of at least one
inorganic layer and at least one organic layer, wherein the at
least one organic layer is located inside the dam.
In the above OLED display, the voltage line comprises a second
voltage line surrounding the pair of first end portions, wherein
the second voltage line comprises a pair of second end portions
bent to at least partially surround outer sides of the pair of
first end portions and a pair of connectors in parallel to the pair
of first connectors and extending from the pair of second end
portions.
In the above OLED display, the dam contacts the second voltage line
outside of the remaining sides of the display area, wherein a
portion of the dam has a straight line shape and contacts the pair
of second end portions, the pair of first connectors, and the metal
layer.
In the above OLED display, the display unit further comprises a pad
unit configured to apply an electrical signal to the display area,
wherein the pad unit is disposed in the non-display area, and
wherein the pair of first connectors and the pair of second
connectors are connected to the pad unit.
In the above OLED display, the metal layer is integrally formed
with the first voltage line.
In the above OLED display, the dam comprises a plurality of dams,
and wherein the first voltage line extends to the outermost
dam.
In the above OLED display, the voltage line comprises a second
voltage line surrounding the pair of first end portions and the
remaining sides of the display area, wherein the metal layer and an
outer side of the second voltage line overlap in the depth
dimension of the OLED display.
In the above OLED display, the TFT comprises an active layer, a
gate electrode, a source electrode, and a drain electrode, wherein
the OLED display further comprises: a gate insulating layer
disposed between the active layer and the gate electrode; and an
interlayer insulating layer disposed between the gate, source and
drain electrodes, wherein the gate and interlayer insulating layers
extend from the display area to the non-display area, and wherein
the thin film encapsulation layer comprises at least one inorganic
layer contacting the gate insulating layer or the interlayer
insulating layer outside the dam.
In the above OLED display, the at least one inorganic layer has a
portion contacting a top surface of the substrate.
Another aspect is an organic light-emitting diode (OLED) display,
comprising: a display unit comprising a display area and a
non-display area surrounding the display area; a voltage line
formed in the non-display area and surrounding the display area; a
plurality of dams formed in the non-display area and surrounding
the display area; and a metal layer located adjacent to the voltage
line, wherein the metal layer and the voltage line overlap the dams
in the depth dimension of the OLED display.
In the above OLED display, the voltage line comprises a first
voltage line disposed in one side of the display area, wherein the
first voltage line comprises a pair of first end portions and a
pair of first connectors respectively connected to the pair of
first end portions, wherein the metal layer is disposed between the
pair of first connectors, and wherein the dams overlap the first
connectors in the depth dimension of the OLED display.
In the above OLED display, the voltage line includes a second
voltage line overlapping the dams.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic plan view of an OLED display according to an
exemplary embodiment.
FIG. 2 is a schematic enlarged plan view of a region A of FIG.
1.
FIG. 3 is a schematic cross-sectional view taken along line II-II'
of FIG. 2.
FIG. 4 is a cross-sectional view of a display unit according to an
exemplary embodiment.
FIG. 5 is a cross-sectional view of an OLED display according to
another exemplary embodiment.
FIG. 6 is a cross-sectional view of an OLED display according to
another exemplary embodiment.
FIG. 7 is a cross-sectional view of an OLED display according to
another exemplary embodiment.
FIG. 8 is a cross-sectional view of an OLED display according to
another exemplary embodiment.
FIG. 9 is a schematic plan view of an OLED display according to
another exemplary embodiment.
FIG. 10 is a schematic enlarged plan view of a region B of FIG.
9.
FIG. 11 is a schematic cross-sectional view taken along line X-X'
of FIG. 11.
FIG. 12 is a cross-sectional view of an OLED display according to
another exemplary embodiment.
DETAILED DESCRIPTION OF CERTAIN INVENTIVE EMBODIMENTS
Reference will now be made in detail to exemplary embodiments,
examples of which are illustrated in the accompanying drawings,
wherein like reference numerals refer to like elements throughout.
In this regard, the present exemplary embodiments may have
different forms and should not be construed as being limited to the
descriptions set forth herein. Accordingly, the exemplary
embodiments are merely described below, by referring to the
figures, to explain aspects of the present description. As used
herein, the term "and/or" includes any and all combinations of one
or more of the associated listed items. Expressions such as "at
least one of," when preceding a list of elements, modify the entire
list of elements and do not modify the individual elements of the
list.
Since the described technology may have various modifications and
several embodiments, exemplary embodiments are shown in the
drawings and will be described in detail. Advantages, features, and
a method of achieving the same will be specified with reference to
the embodiments described below in detail together with the
attached drawings. However, the embodiments may have different
forms and should not be construed as being limited to the
descriptions set forth herein.
The embodiments of the described technology will be described below
in more detail with reference to the accompanying drawings. Those
components that are the same or are in correspondence are rendered
the same reference numeral regardless of the figure number, and
redundant explanations are omitted.
It will be understood that although the terms "first", "second",
etc. may be used herein to describe various components, these
components should not be limited by these terms. These components
are only used to distinguish one component from another.
Singular expressions, unless defined otherwise in contexts, include
plural expressions.
In the embodiments below, it will be further understood that the
terms "comprise" and/or "have" used herein specify the presence of
stated features or components, but do not preclude the presence or
addition of one or more other features or components.
Also, in the drawings, for convenience of description, sizes of
elements may be exaggerated or contracted. In other words, since
sizes and thicknesses of components in the drawings are arbitrarily
illustrated for convenience of explanation, the following
embodiments are not limited thereto.
When an exemplary embodiment is implementable in another manner, a
predetermined process order may be different from a described one.
For example, two processes that are consecutively described may be
substantially simultaneously performed or may be performed in an
opposite order to the described order. In this disclosure, the term
"substantially" includes the meanings of completely, almost
completely or to any significant degree under some applications and
in accordance with those skilled in the art. Moreover, "formed,
disposed or positioned over" can also mean "formed, disposed or
positioned on." The term "connected" includes an electrical
connection.
FIG. 1 is a schematic plan view of an OLED display 1000 according
to an exemplary embodiment. FIG. 2 is a schematic enlarged plan
view of a region A of FIG. 1. FIG. 3 is a schematic cross-sectional
view taken along line II-II' of FIG. 2. FIG. 4 is a cross-sectional
view of a display unit according to an exemplary embodiment.
Referring to FIGS. 1 through 4, the OLED display 1000 according to
an exemplary embodiment includes a substrate 100, a display unit
200 on the substrate 100, a thin-film encapsulation layer 300 for
sealing the display unit 200, voltage lines 10a and 20 formed in a
non-display area and surrounding a display area DA, and a dam unit
(or dam) 50a having at least a part contacting the voltage lines
10a and 20.
The substrate 100 may include various materials. According to an
exemplary embodiment, the substrate 100 includes a SiO.sub.2-based
transparent glass material but is not limited thereto. The
substrate 100 may include a transparent plastic material. The
plastic material may be an organic material selected from the group
consisting of polyethersulphone (PES), polyacrylate (PAR),
polyetherimide (PEI), polyethylene napthalate (PEN),
polyethyleneterepthalate (PET), polyphenylene sulfide (PPS),
polyallylate, polyimide, polycarbonate (PC), cellulose triacetate
(TAC), and cellulose acetate propionate (CAP), which are insulating
organic materials.
When the OLED display 1000 is a bottom emission-type display device
in which an image is formed in a direction of the substrate 100,
the substrate 100 should be formed of a transparent material.
However, when the OLED display 1000 is a top emission-type display
device in which an image is formed in a direction away from the
substrate 100, the substrate 100 does not need to include a
transparent material. In this case, the substrate 100 may be formed
of a metal. When the substrate 100 includes a metal, the substrate
100 may include, but is not limited to, at least one of iron,
chromium, manganese, nickel, titanium, molybdenum, stainless steel
(SUS), Invar alloy, Inconel alloy, and Kovar alloy.
The display unit 200 may be formed on the substrate 100. The
display unit 200 may include the display area DA in which an image
is formed and viewed by a user, and the non-display area, which is
the perimeter of the display area DA.
An OLED may be disposed in the display area DA, and the voltage
lines 10a and 20 may be disposed in the non-display region and
supply power to the OLED.
In the non-display area, a pad unit PAD may be further included and
transmit an electric signal to the display area DA from a power
supply (not shown) or a signal generator (not shown).
The pad unit PAD may include a driver IC 410, a pad 430 that
connects the driver IC 410 to a pixel circuit, and a fan out line
420.
The driver IC 410 may include a data driving unit (or data driver)
for supplying a data signal to the pixel circuit and various
function units for driving the pixel circuit. The driver IC 410 may
be mounted on the substrate 100 as a chip on glass (COG) type. A
connection terminal (not shown) that is electrically connected to
the pad 430 formed on the substrate 100 may be provided to one side
of the driver IC 410. An adhesive material including a conductive
ball and capable of electrical connection may be disposed between
the pad 430 and the connection terminal (not shown) to bond the pad
430 and the connection terminal (not shown). Examples of the
adhesive material may include an anisotropic conductive film, a
self-organized conductive film, etc.
The pad 430 may be a part formed on the substrate 100 and
electrically connected to the connection terminal of the driver IC
410. The pad 430 may be electrically connected to the fan out line
420. As shown in FIG. 1, the pad 430 may include a different layer
from that of the fan out line 420 but is not limited thereto. The
pad 430 may elongate from the fan out line 420 and be disposed on
the same layer as the fan out line 420. The pad 430 may include a
layer or multilayers including at least one material selected from
molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and
titanium (Ti).
The fan out line 420 may connect the pad 430 to the pixel circuit.
The fan out line 420 may be formed of the same material and formed
on the same layer as that of a gate electrode G. That is, the fan
out line 420 may be disposed on a gate insulation layer 210.
The display unit 200 will be described in more detail with
reference to FIG. 4 below.
A buffer layer 110 may be formed on the substrate 100. The buffer
layer 110 may provide a flat surface on the substrate 100 and
prevent impurities or moisture from permeating the substrate 100.
For example, the buffer layer 110 is formed of inorganic materials
such as silicon oxide, silicon nitride, silicon oxynitride,
aluminum oxide, aluminum nitride, titanium oxide, titanium nitride,
etc., organic materials such as polyimide, polyester, acryl, etc.,
or a stack structure including a plurality of materials among the
above materials. The buffer layer 110 may be formed on the display
area DA and extend to the non-display area.
The display area DA may have, for example, a rectangular shape. A
thin-film transistor TFT and the OLED electrically connected to the
thin-film transistor TFT may be disposed in the display area
DA.
The thin-film transistor TFT may include an active layer A, the
gate electrode G, a source electrode S, and a drain electrode
D.
The thin-film transistor TFT is a top gate-type transistor in which
the active layer A, the gate electrode G, the source electrode S,
and the drain electrode D are sequentially formed in this order.
However, the exemplary embodiment is not limited thereto and other
various types of thin-film transistors such as a bottom gate-type
transistor may be employed as the thin-film transistor TFT.
The active layer A may be formed of polysilicon and may include a
channel area that is not doped with impurities and a source area
and a drain area that are doped with impurities on both sides of
the channel area. In this regard, impurities may be different
depending on a type of the thin-film transistor TFT and may be N
type impurities or P type impurities.
After the active layer A is formed, the gate insulation layer 210
may be formed on the active layer A over the entire surface of the
substrate 100. The gate insulation layer 210 may include a
multi-layer structure or a single layer formed of an inorganic
material such as a silicon oxide or a silicon nitride. The gate
insulation layer 210 may insulate the active layer A from the gate
electrode G disposed on the active layer A. The gate insulation
layer 210 may extend to not only the display area DA but also to a
part of the non-display area.
After the gate insulation layer 210 is formed, the gate electrode G
may be formed on the gate insulation layer 210. The gate electrode
G may be formed using a photolithography process and an etching
process.
The gate electrode G may be formed on the gate insulation layer
210. The gate electrode G may be connected to a gate line (not
shown) that applies an on/off signal to the thin film transistor
TFT.
The gate electrode G may include a low resistance metal material.
The gate electrode G may include a single layer or multiple layers
using, for example, at least one of aluminum (Al), platinum (Pt),
palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel
(Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li),
calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and
copper (Cu), by taking into account the adhesive strength between
the gate electrode G and a layer adjacent thereto, the surface
flatness and processability of stacked layers, etc.
After the gate electrode G is formed, an interlayer insulation
layer 230 may be formed over the entire surface of the substrate
100. The interlayer insulation layer 230 may insulate between the
source electrode S and the drain electrode D and the gate electrode
G. The interlayer insulation layer 230 may extend to not only the
display area DA but also a part of the non-display area.
The interlayer insulation layer 230 may be formed of an inorganic
material. According to an exemplary embodiment, the interlayer
insulation layer 230 is formed of a metal oxide or a metal nitride.
Examples of the organic material may include a silicon oxide
(SiO.sub.2), a silicon nitride (SiNx), a silicon oxynitride (SiON),
an aluminum oxide (Al.sub.2O.sub.3), a titanium oxide (TiO.sub.2),
a tantalum oxide (Ta.sub.2O.sub.5), a hafnium oxide (HfO.sub.2),
and a zinc oxide (ZrO.sub.2).
The interlayer insulation layer 230 may include a multi-layer
structure or a single layer formed of an inorganic material such as
silicon oxide (SiOx) and/or silicon nitride (SiNx). In some
exemplary embodiments, the interlayer insulation layer 230 may have
a double layer structure of SiOx/SiNy or SiNx/SiOy.
The source electrode S and the drain electrode D of the thin film
transistor TFT may be disposed on the interlayer insulation layer
230. The source electrode S and the drain electrode D may each
include a single layer or multiple layers including, for example,
at least one of aluminum (Al), platinum (Pt), palladium (Pd),
silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium
(Nd), iridium (Ir), chromium (Cr), nickel (Li), calcium (Ca),
molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The
source electrode S and the drain electrode D may be formed to
contact an area of the active layer A.
A planarization layer 250 may be formed over the entire surface of
the substrate 100 and cover the source electrode S and the drain
electrode D. The planarization layer 250 may remove a step formed
by the thin film transistor TFT and planarize an upper surface of
the substrate 100 and prevent malfunction of the OLED due to a
lower uneven structure.
The planarization layer 250 may be formed of an insulation
material. For example, the planarization layer 250 is formed of an
inorganic material, an organic material, or an organic/inorganic
composite material and has a single layer or a multi-layer
structure by using various deposition methods. In some exemplary
embodiments, the planarization layer 250 is formed of at least one
material from among an acrylic resin (polyacrylates resin), an
epoxy resin, a phenolic resin, a polyamide resin, a polyimide
resin, an unsaturated polyester resin, a polyphenylene ether resin,
a polyphenylene sulfide resin, and a benzocyclobutene (BCB).
The OLED may be provided on the planarization layer 250. The OLED
may include a pixel electrode 281, an intermediate layer 283
including an organic emissive layer, and an opposite electrode 285.
As shown in FIG. 4, the pixel electrode 281 may be electrically
connected to the drain electrode D.
The pixel electrode 281 and/or the opposite electrode 285 may
include a transparent electrode or a reflective electrode. When the
pixel electrode 281 and/or the opposite electrode 285 include a
transparent electrode, the transparent electrode may include ITO,
IZO, ZnO, or In.sub.2O.sub.3. When the pixel electrode 281 and/or
the opposite electrode 285 include a reflective electrode, the
reflective electrode may include a reflective layer including Ag,
Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof and a
transparent layer including ITO, IZO, ZnO, or In.sub.2O.sub.3. In
some exemplary embodiments, the pixel electrode 281 or the opposite
electrode 285 may have an ITO/Ag/ITO structure.
The pixel electrode 281 may be formed on the planarization layer
250 and electrically connected to the thin film transistor TFT via
a contact hole formed in the planarization layer 250. For example,
the pixel electrode 281 is a reflective electrode. For example, the
pixel electrode 281 includes a reflective film formed of Ag, Mg,
Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a combination thereof, and a
transparent or semi-transparent electrode layer formed on the
reflective film. The transparent or semi-transparent electrode
layer may include at least one of indium tin oxide (ITO), indium
zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In.sub.2O.sub.3),
indium gallium oxide (IGO), and aluminum zinc oxide (AZO).
The opposite electrode 285 disposed opposite the pixel electrode
281 may be a transparent or semi-transparent electrode, and may
include a metal thin film with a low work function such as Li, Ca,
LiF/Ca, LiF/Al, Al, Ag, Mg, or a combination thereof. An auxiliary
electrode layer or a bus electrode may be further formed on the
metal thin film by using a material for forming a transparent
electrode, e.g., ITO, IZO, ZnO, In.sub.2O.sub.3, or the like. Thus,
the opposite electrode 285 may allow light emitted from the organic
emission layer included in the intermediate layer 283 to pass
therethrough. That is, the light emitted from the organic emission
layer may be reflected directly or via the pixel electrode 281,
which is a reflective electrode, and emitted toward the opposite
electrode 285.
However, the display unit 200 according to the present embodiment
is not limited to a top emission-type display device and may be a
bottom emission-type display device in which light emitted from the
organic emission layer is emitted toward the substrate 100. In this
case, the pixel electrode 281 may be a transparent or
semi-transparent electrode and the opposite electrode 285 may be a
reflective electrode. Also, the display unit 200 according to the
present embodiment may be a dual emission-type display device in
which light is emitted in both directions of front and bottom
surfaces thereof.
A pixel-defining film 270 formed of an insulating material may be
disposed on the opposite electrode 285. The pixel-defining film 270
may include at least one organic insulating material selected from
the group consisting of polyimide, polyamide, acryl resin,
benzocyclobutene, and phenol resin by spin coating or the like.
The pixel-defining film 270 may function to define a pixel area and
a non-pixel area. The pixel-defining film 270 may be formed on the
substrate 100 and include an opening partially exposing the pixel
electrode 281. As shown in FIG. 3, the thin film encapsulation
layer 300 may seal the display unit 200 and prevent external oxygen
and moisture from permeating into the display unit 200. The thin
film encapsulation layer 300 may include a plurality of organic
layers 330 and a plurality of inorganic layers 310. The organic
layers 330 and the inorganic layers 310 may be alternately stacked
to form a multilayer structure. An example of the thin film
encapsulation layer 300 including two organic layers 330a and 330b
and two inorganic layers 310a and 310b is illustrated in FIG. 3 but
the exemplary embodiments are not limited thereto.
The organic layers 330a and 330b may each include, for example, at
least one of acryl-based resin, methacryl-based resin,
polyisoprene, vinyl-based resin, epoxy-based resin, urethane-based
resin, cellulose-based resin, and perylene-based resin.
The inorganic layers 310a and 310b may each include, for example,
at least one of silicon nitride, aluminum nitride, zirconium
nitride, titanium nitride, hafnium nitride, tantalum nitride,
silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium
oxide, and silicon oxynitride (SiON).
As shown in FIG. 1, the voltage lines 10a and 20 surrounding the
display area DA and the dam unit 50a may be disposed in the
non-display area outside the display area DA.
The voltage lines 10a and 20 may be formed of the same materials as
those of the source electrode S and the drain electrode D. The
voltage lines 10a and 20 may include the first voltage line 10a and
the second voltage line 20. According to an exemplary embodiment,
the first voltage line 10a is a driving voltage line ELVDD, and the
second voltage line 20 may be a common voltage line ELVSS. The
second voltage line 20 may be connected to the opposite electrode
285.
The first voltage line 10a may be disposed to correspond to at
least one side of the display area DA. The first voltage line 10a
may include a pair of first end portions 11 formed in parallel to
one side of the display area DA. In this regard, the at least one
side corresponding to the first voltage line 10a may be a side
adjacent to the pad unit PAD.
The second voltage line 20 may surround the pair of first end
portions 11 of the first voltage line 10a and the other sides of
the display area DA.
The second voltage line 20 may include a pair of second end
portions 21 bent to cover outer sides of the pair of first end
portions 11. Each of the first end portions 11 may be disposed
between the display area DA and the pair of second end portions
21.
The first voltage line 10a may include a pair of first connection
units (or connectors) 12a. The second voltage line 20 may include a
pair of second connection units 22. The pair of first connection
units 12a may extend in a direction perpendicular to (or crossing)
the pair of first end portions 11. The pair of second connection
units 22 may be formed in parallel to the pair of first connection
units 12a from the pair of second end portions 21.
The pair of first connection units 12a and the pair of second
connection units 22 may be connected to the pad unit PAD outside
the at least one side of the display area DA.
At least a part of the dam unit 50a may be formed to contact the
first voltage line 10a and/or the second voltage line 20.
The dam unit 50a may surround and be integrally connected around
four sides of the display area DA outside the display area DA. That
is, the dam unit 50a may continuously surround the four sides of
the display area DA in a ring shape.
The dam unit 50a may prevent flow of an organic material along an
edge of the substrate 100 when the organic layers 330 of the thin
film encapsulation layer 300 for sealing the display unit 100 are
formed, thereby preventing formation of edge tails of the organic
layers 330.
As shown in FIG. 3, the organic layers 330 of the thin film
encapsulation layer 300 may be formed larger than the inorganic
layers 310. In this regard, the dam unit 50a may prevent flow of
the organic material along the edge of the substrate 100 when the
organic layers 330 are formed. The organic layers 330 may be
disposed inside the dam unit 50a.
According to an exemplary embodiment, the inorganic layers 310
extend and contact each other outside the dam unit 50a. At least
one of the inorganic layers 310 may contact the gate insulation
layer 210 or the interlayer insulation layer 230 outside the dam
unit 50a, thereby preventing permeation of external moisture into a
side surface of the thin film encapsulation layer 300 and improving
the adhesive strength of the thin film encapsulation layer 300.
According to an exemplary embodiment, outside the dam unit 50, at
least one of the inorganic layers 310 contacts a top surface of the
substrate 100 by passing by an end portion of the interlayer
insulation layer 230 and may contact side surfaces of the gate
insulation layer 210 and the interlayer insulation layer 230. Thus,
edges of the inorganic layers 310 may be separated, thereby
preventing the weakening and removal of an encapsulation
characteristic of the thin film encapsulation layer 300.
The dam unit 50a of the OLED display 1000 according to the present
embodiment may include at least two or more dams.
According to an exemplary embodiment, as shown in FIGS. 1 through
3, the dam unit 50a includes a first dam 51a and a second dam 53a
spaced apart from the first dam 51a by a predetermined distance and
formed outside the first dam 51a.
The dam unit 50a may include at least two dams, thereby effectively
blocking reflow of an organic material and preventing flow of an
organic layer when only one dam is provided.
Although FIGS. 1 through 3 illustrate embodiments in which the dam
unit 50a includes the first dam 51a and the second dam 53a, the
number of dams is not limited thereto as long as at least two are
provided.
Although the first dam 51a and the second dam 53a have the same
height in the embodiments of FIGS. 1 through 3, when two or more
dams are formed, the height of the dam unit 50a may increase toward
the outside of the substrate 10.
The organic layers 330 of the thin film encapsulation layer 300 of
the OLED display 1000 according to the present embodiment may block
an organic material from spreading and overflowing due to the dam
unit 50a when the organic layers 330 are formed inside the first
dam 51a located innermost on the substrate 100.
That is, the dam unit 50a may provide a double dam including the
first dam 51a and the second dam 53a, thereby blocking an organic
layer from spreading and overflowing due to the first dam 51a, and
thus, no organic layers may be formed between the first dam 51a and
the second dam 53a.
No organic layers may be formed between the first dam 51a and the
second dam 53a, thereby efficiently preventing permeation of
external moisture.
The dam unit 50a may include an organic material. According to an
exemplary embodiment, the dam unit 50a may include at least one
organic insulating material selected from the group consisting of
polyimide, polyamide, acryl resin, benzocyclobutene, and phenol
resin.
A metal layer 30a may be formed between the pair of first
connection units 12a of the first voltage line 10a. As shown in
FIG. 3, the metal layer 30a may be located below the dam unit 50a
to contact the dam unit 50a.
The metal layer 30a may thus improve the adhesive strength of the
dam unit 50 formed between the pair of first connection unit
12a.
When the dam unit 50a includes an organic material, the adhesive
strength of the organic material of the dam unit 50a with respect
to an inorganic material is weak. Thus, when the dam unit 50a
adheres to the inorganic material, a separation phenomenon may
occur, and external moisture or oxygen may permeate, and thus the
OLED may be damaged.
In the OLED display 1000 according to the present embodiment, the
dam unit 50a may be integrally connected and continuously surround
four sides of the display area DA, and the metal layer 30a may
contact a lower portion of the dam unit 50a between the pair of
first connection units 12, and thus the adhesive strength of the
dam unit 50a may be improved.
An area in which the metal layer 30a is formed is not limited.
Thus, as long as at least a part of the metal layer 30a is below
the dam unit 50, the metal layer may be formed between the pair of
first connection units 12a without limitation.
According to an exemplary embodiment, the metal layer 30a may be
formed with the first voltage line 10a. Thus, the metal layer 30a
may be formed on the same layer and may be formed of the same
material as the first voltage line 10a.
According to an exemplary embodiment, the metal layer 30a may be
formed of at least one of aluminum (Al), platinum (Pt), palladium
(Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni),
neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium
(Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper
(Cu).
As another selective embodiment, the metal layer 30a is formed with
the source electrode S and the drain electrode D of the thin film
transistor TFT. Thus, the metal layer 30a may be formed on the same
layer and may include the same material as the source electrode S
and the drain electrode D.
As shown in FIG. 3, the dam unit 50a is formed on the same layer
and formed of the same material as the planarization layer 250.
The metal layer 30a may be formed below the dam unit 50a and thus
the lower portion of the dam unit 50a may contact the metal layer
30a. The dam unit 50a may be formed above the metal layer 30a and
have substantially the same height as that of the planarization
layer 250. However, the height of the dam unit 50 is not limited
thereto.
According to an exemplary embodiment, the dam unit 50a is formed of
an organic insulating material including at least one material from
among an acrylic resin (polyacrylates resin), an epoxy resin, a
phenolic resin, a polyamide resin, a polyimide resin, an
unsaturated polyester resin, a polyphenylene ether resin, a
polyphenylene sulfide resin, and a benzocyclobutene (BCB).
As shown in FIG. 1, the dam unit 50a of the OLED display 1000
according to the present embodiment may be formed to contact the
second voltage line 20 on at least three sides of the display area
DA.
That is, the second dam 53a formed outermost in the dam unit 50a
may be formed to contact an edge of the second voltage line 20 on
at least three sides of the display area DA.
On one side of the display area DA corresponding to a side in which
the first end portions 11 of the first voltage line 10a are
disposed, the dam unit 50a surrounding the display area DA may be
integrally and continuously connected and may have at least a part
contacting the second end portions 21. In other parts of the dam
unit 50a, at least a part of the dam unit 50a may contact the first
connection units 12. In the other parts of the dam unit 50a, at
least a part of the dam unit 50a may contact the metal layer
30a.
Therefore, at least three sides of the dam unit 50a including four
sides in the ring shape may contact the second voltage line 20, and
the one side thereof may contact the second end portions 21, the
first connection units 12a, and the metal layer 30a, thereby
improving the adhesive strength of the dam unit 50a.
FIG. 5 is a cross-sectional view of an OLED display 2000 according
to another exemplary embodiment. The same reference numerals
between FIGS. 1 through 4 and 5 denote the same elements, and thus
redundant descriptions thereof are omitted for brevity of
explanation.
A dam unit 50b of the OLED display 2000 according to the present
embodiment may have the same function as that of the dam unit 50a
of the OLED display 1000 shown in FIGS. 1 through 3, and thus the
differences therebetween will now be described.
The dam unit 50b may include at least two dams, and may be
integrally connected and surround four sides of the display area DA
outside the display area DA. That is, the dam unit 50b may
continuously surround the four sides of the display area DA in a
ring shape.
The dam unit 50b may contact the metal layer 30a between the pair
of first connection units 12 (see FIG. 1), and thus the adhesive
strength of the dam unit 50b may be improved, thereby reducing a
probability that external moisture or oxygen may permeate and
improving the reliability of the OLED.
According to an exemplary embodiment, the dam unit 50b includes a
part formed on the same layer as the planarization layer 250 and a
part formed on the same layer as the pixel-defining layer 270.
That is, when the planarization layer 250 is formed, the part of
the dam unit 50b may be formed on the same layer as the
planarization layer 250, and, when the pixel-defining layer 270 is
formed, the part of the dam unit 50b may be formed on the same
layer as the pixel-defining layer 270.
The part of the dam unit 50b formed on the same layer as the
pixel-defining layer 270 may be formed of the same material as that
of the pixel-defining layer 270. According to an exemplary
embodiment, the part of the dam unit 50b is formed of at least one
organic insulating material selected from the group consisting of
polyimide, polyamide, acryl resin, and benzocyclobutene.
The part of the dam unit 50b formed on the same layer as the
planarization layer 250 and the part of the dam unit 50b formed on
the same layer as the pixel-defining layer 270 may be integrally
formed.
The organic layer 330 may be blocked from spreading and overflowing
by a first dam 51b, and thus the organic layer 330 may not be
formed between the first dam 51b and a second dam 53b.
No organic layers may be formed between the first dam 51b and the
second dam 53b, and the organic layer 330 may be formed inside the
first dam 51b, thereby efficiently preventing permeation of
external moisture.
As shown in FIG. 5, the dam unit 50b may be formed above the metal
layer 30a and have the same height as those of the planarization
layer 250 and the pixel-defining layer 270. However, the height of
the dam unit 50b is not limited thereto.
According to an exemplary embodiment, the first dam 51b and the
second dam 53b are formed to have different heights. That is, a
height of the second dam 53b located outside the substrate 100 may
be relatively higher than that of the first dam 51b.
FIG. 6 is a cross-sectional view of an OLED display 3000 according
to another exemplary embodiment. The same reference numerals
between FIGS. 1 through 4 and 6 denote the same elements, and thus
redundant descriptions thereof are omitted for brevity of
explanation.
A dam unit 50c of the OLED display 3000 according to the present
embodiment may have the same function as that of the dam units 50a
and 50b described above, and thus the differences therebetween will
now be described for convenience of description.
The dam unit 50c of the OLED display 3000 according to the present
embodiment may include a first dam 51c and the second dam 53b
having different heights. That is, a height of the second dam 53b
may be higher than that of the first dam 51c.
In this case, the first dam 51c may include the same material as
the pixel-defining layer 270 when the pixel-defining layer 270 is
formed, and a lower portion of the second dam 53b may include the
same material as that of the planarization layer 250 when the
planarization layer 250 is formed, and then, when the
pixel-defining layer 270 is formed, an upper portion of the second
dam 53b may include the same material as that of the pixel-defining
layer 270 with the first dam 51c.
That is, the dam unit 50c may include the same material as that of
the planarization layer 250 and/or the pixel-defining layer 270
when the planarization layer 250 and/or the pixel-defining layer
270 is formed. In this case, the height and the material of the dam
unit 50c are not limited.
According to an exemplary embodiment, a part of the second dam 53b
formed on the same layer as the planarization layer 250 and a part
thereof formed on the same layer as the pixel-defining layer 270
may include the same material so that lower and upper portions of
the second dam 53b may be integrally formed.
No organic layers may be formed between the first dam 51c and the
second dam 53b, and the organic layer 330 may be formed inside the
first dam 51c, thereby efficiently preventing permeation of
external moisture.
FIG. 7 is a cross-sectional view of an OLED display 4000 according
to another exemplary embodiment. The same reference numerals
between FIGS. 1 through 4 and 7 denote the same elements, and thus
redundant descriptions thereof are omitted for brevity of
explanation.
A metal layer 30b of the OLED display 4000 according to the present
embodiment may be formed only in a lower portion of the dam unit
50a. That is, the metal layer 30b may be completely located in the
lower portion of the dam unit 50 to contact the dam unit 50a.
According to the present embodiment, the metal layer 30b may be
formed between an inorganic layer such as the gate insulating layer
210, the interlayer insulating layer 230, etc. and the dam unit
50a, thereby improving the adhesive strength of the dam unit 50a
and effectively blocking permeation of external moisture or oxygen
to improve the reliability of the OLED.
According to an exemplary embodiment, the metal layer 30b may be
formed on the same layer and include the same material as that of
the source electrode S and the drain electrode D of the thin film
transistor TFT.
The dam unit 50a may include the first dam 51a and the second dam
53a and may be formed on the same layer and include the same
material as that of the planarization layer 250.
As shown in FIG. 7, the dam unit 50a has substantially the same
height as that of the planarization layer 250 but the height of the
dam unit 50a is not limited thereto. According to an exemplary
embodiment, the height of the second dam 53a may be greater than
that of the first dam 51a outside the substrate 100.
FIG. 8 is a cross-sectional view of an OLED display 5000 according
to another exemplary embodiment. The same reference numerals
between FIGS. 1 through 5 and 8 denote the same elements, and thus
redundant descriptions thereof are omitted for brevity of
explanation.
In the OLED display 5000 according to the present exemplary
embodiment, the metal layer 30b is completely located in a lower
portion of the dam unit 50b and contacts the dam unit 50b. That is,
the metal layer 30b may be formed only in an area in which the dam
unit 50b is formed.
The metal layer 30b may be formed in a lower portion of the area in
which the dam unit 50b is formed, thereby improving the adhesive
strength of the dam unit 50b and effectively blocking permeation of
external moisture or oxygen to improve the reliability of the
OLED.
According to an exemplary embodiment, the metal layer 30b is formed
on the same layer and formed of the same material as that of the
first voltage line 10a.
As another selective embodiment, the metal layer 30b is formed on
the same layer and formed of the same material as that of the
source electrode S and the drain electrode D of the thin film
transistor TFT.
The dam unit 50a may include the first dam 51b and the second dam
53b and, according to an exemplary embodiment, may include a part
formed on the same layer as the planarization layer 250 and a part
formed on the same layer as the pixel-defining layer 270.
As shown in FIG. 8, the first dam 51b and the second dam 53b may
have the same height but a height of the dam unit 51b is not
limited thereto. The height of the second dam 53b located outside
of the substrate 100 may be relatively higher than that of the
first dam 51b.
According to an exemplary embodiment, when the planarization layer
250 is formed, a lower portion of the dam unit 53b may be formed
with the planarization layer 250, and then, when the pixel-defining
layer 270 is formed, the first dam 51b and an upper portion of the
second dam 53b may be formed with the pixel-defining layer 270.
According to an exemplary embodiment, the part of the dam unit 51b
formed on the same layer as the planarization layer 250 and the
part of the dam unit 51b formed on the same layer as the
pixel-defining layer 270 are formed of the same material and
integrally formed.
FIG. 9 is a schematic plan view of an OLED display 6000 according
to another exemplary embodiment. FIG. 10 is a schematic enlarged
plan view of a region B of FIG. 9. FIG. 11 is a schematic
cross-sectional view taken along line X-X' of FIG. 11.
The same reference numerals between FIGS. 1 through 4 and FIGS. 9
through 11 denote the same elements, and thus redundant
descriptions thereof are omitted for brevity of explanation.
The OLED display 6000 according to the present exemplary embodiment
may include the substrate 100, the display unit 200 on the
substrate 100, the thin-film encapsulation layer 300 for sealing
the display unit 200, voltage lines 10b and 20 formed in a
non-display area and surrounding a display area DA, and a dam unit
50 having at least a part contacting the voltage lines 10b and
20.
The first voltage line 10b may be disposed to correspond to at
least one side of the display area DA. In this regard, the at least
one side corresponding to the first voltage line 10b may be a side
adjacent to the pad unit PAD.
The first voltage line 10b may include a pair of first connection
units 12b connected to the pad unit PAD.
A metal layer may be disposed between the pair of first connection
units 12b. The dam unit 50a may contact the metal layer between the
first connection units 12b and may be integrally connected and
continuously surround the display area DA.
As shown in FIG. 9, the metal layer of the OLED display 6000
according to the present embodiment is formed by extending the
first voltage line 10b.
That is, the metal layer may not be provided between the first
connection units 12b but may be formed by extending the first
voltage line 10b to a blank area between the first connection units
12b when the first voltage line 10b is formed, so that a lower
portion of the dam unit 50 may contact the first voltage line 10b
between the first connection units 12b.
According to an exemplary embodiment, the first voltage line 10b is
formed by extending in a way that metal is filled between the first
connection units 12b without an empty space.
The first voltage line 10b may be formed by extending to an area in
which a dam is at least formed outermost the dam unit 50a.
According to an exemplary embodiment, when the dam unit 50a
includes the first dam 51a and the second dam 53a, the dam unit 50a
is formed by extending to an area in which the second dam 53a is
formed. Thus, lower portions of the first dam 51a and the second
dam 53a may be adhered to the first voltage line 10b.
In the OLED display 6000 according to the present exemplary
embodiment, the dam unit 50a completely contacts a lower portion of
the first voltage line 10b between the first connection units 12b,
thereby improving the adhesive strength of the dam unit 50a to
reduce a probability that external moisture or oxygen may permeate
and improving the reliability of the OLED.
The voltage lines 10b and 20 may include the second voltage line
20. The second voltage line 20 may include the pair of second end
portions 21 bent to cover outer sides of the pair of first end
portions 11. Each of the first end portions 11 may be disposed
between the display area DA and the pair of second end portions
21.
The second voltage line 20 may include the pair of second
connection units 22. The pair of first connection units 12b may
extend in a direction perpendicular to (or crossing) the pair of
first end portions 11. The pair of second connection units 22 may
be formed in parallel to the pair of first connection units 12b and
extend from the pair of second end portions 21.
The pair of first connection units 12b and the pair of second
connection units 22 may be connected to the pad unit PAD outside
the at least one side of the display area DA.
According to an exemplary embodiment, outer sides of the first
voltage line 10b and the second voltage line 20 are located on the
same line outside the display area DA of a side in which the first
end portions 11 are disposed.
That is, the outer side of the first voltage line 10b may extend to
the outer side of the second end portions 21 outside of the side in
which the first end portions 11 are disposed in outer sides of four
sides of the display area DA so that the outer sides of the first
voltage line 10b and the second voltage line 20 may be located on
the same line.
As shown in FIG. 11, the dam unit 50a is formed on the same layer
and formed of the same material as that of the planarization layer
250.
The first dam 51a and the second dam 53a may have the same height
but a height of the dam unit 50a is not limited thereto. The height
of the second dam 53a located outside of the substrate 100 may be
relatively higher than that of the first dam 51a.
As shown in FIG. 11, the first voltage line 10b extends to a lower
portion of the second dam 53a, and the first voltage line 10b is
provided between the dam unit 50a and a lower inorganic layer, and
thus the dam unit 50a may contact the first voltage line 10b formed
of a metal material, thereby improving the adhesive strength of the
dam unit 50a.
FIG. 12 is a cross-sectional view of an OLED display 7000 according
to another exemplary embodiment. The same reference numerals
between FIGS. 1 through 6 and 12 denote the same elements, and thus
redundant descriptions thereof are omitted for brevity of
explanation.
In the OLED display 7000 according to the present exemplary
embodiment, the first voltage line 10b extends to an area in which
the second dam 53b is formed, and the first voltage line 10b is
provided between the dam unit 50c and a lower inorganic layer, and
thus the dam unit 50c may contact the first voltage line 10b formed
of a metal material, thereby improving the adhesive strength of the
dam unit 50c.
In the OLED display 7000 according to the present exemplary
embodiment, the dam unit 50c includes the first dam 51c and the
second dam 53b that have different heights. That is, the height of
the second dam 53b located outside of the substrate 100 may be
greater than that of the first dam 51c.
That is, when the planarization layer 250 is formed, a lower
portion of the dam unit 53b may be formed with the planarization
layer 250, and then, when the pixel-defining layer 270 is formed,
the first dam 51c and an upper portion of the second dam 53b may be
formed with the pixel-defining layer 270.
According to an exemplary embodiment, a part of the dam unit 51b
formed on the same layer as the planarization layer 250 and a part
of the dam unit 51b formed on the same layer as the pixel-defining
layer 270 are formed of the same material and integrally
formed.
No organic layers may be formed between the first dam 51c and the
second dam 53b, and the organic layer 330 may be formed inside the
first dam 51c, thereby efficiently preventing permeation of
external moisture.
A lower portion of the second dam 53b formed on the same layer as
the planarization layer 250 and an upper portion thereof formed on
the same layer as the pixel-defining layer 270 may be formed of the
same material and integrally formed.
As described above, according to the one or more of the exemplary
embodiments, reliability is improved by effectively preventing
external moisture or oxygen from permeating.
It should be understood that exemplary embodiments described herein
should be considered in a descriptive sense only and not for
purposes of limitation. Descriptions of features or aspects within
each exemplary embodiment should typically be considered as
available for other similar features or aspects in other exemplary
embodiments.
While the inventive technology has been described with reference to
the figures, it will be understood by those of ordinary skill in
the art that various changes in form and details may be made
therein without departing from the spirit and scope as defined by
the following claims.
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