U.S. patent application number 17/824835 was filed with the patent office on 2022-09-15 for light-emtting diode display devices with uv-cured layer.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Hyunsung Bang, Chung-Chia Chen, Byung Sung Kwak, Wan-Yu Lin, Robert Jan Visser, Lisong Xu, Gang Yu.
Application Number | 20220293878 17/824835 |
Document ID | / |
Family ID | 1000006377545 |
Filed Date | 2022-09-15 |
United States Patent
Application |
20220293878 |
Kind Code |
A1 |
Yu; Gang ; et al. |
September 15, 2022 |
LIGHT-EMTTING DIODE DISPLAY DEVICES WITH UV-CURED LAYER
Abstract
A light-emitting diode (LED) structure includes a light-emitting
diode including an emissive electroluminescent layer situated
between two electrodes, a light extraction layer (LEL) comprising a
UV-cured ink, and a UV blocking layer between the LEL and the
light-emitting diode. The UV blocking layer has a thickness of
50-500 nm and at least 90% absorption to UV light of wavelengths
for curing the UV-cured ink.
Inventors: |
Yu; Gang; (Santa Barbara,
CA) ; Chen; Chung-Chia; (New Taipei City, TW)
; Lin; Wan-Yu; (Taipei City, TW) ; Bang;
Hyunsung; (Aschaffenburg, DE) ; Xu; Lisong;
(San Jose, CA) ; Kwak; Byung Sung; (Portland,
OR) ; Visser; Robert Jan; (Menlo Park, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
1000006377545 |
Appl. No.: |
17/824835 |
Filed: |
May 25, 2022 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16685944 |
Nov 15, 2019 |
11355724 |
|
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17824835 |
|
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62931760 |
Nov 6, 2019 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/56 20130101;
H01L 51/5012 20130101; H01L 51/504 20130101; H01L 51/0025 20130101;
H01L 51/0007 20130101; H01L 51/426 20130101; H01L 51/5275 20130101;
H01L 51/5271 20130101 |
International
Class: |
H01L 51/50 20060101
H01L051/50; H01L 51/52 20060101 H01L051/52; H01L 51/56 20060101
H01L051/56; H01L 51/00 20060101 H01L051/00; H01L 51/42 20060101
H01L051/42 |
Claims
1. A light-emitting diode (LED) structure comprising: a
light-emitting diode including an emissive electroluminescent layer
situated between two electrodes; a light extraction layer (LEL)
comprising a UV-cured ink; and a UV blocking layer between the LEL
and the light-emitting diode, the UV blocking layer having a
thickness of 50-500 nm and at least 90% absorption to UV light of
wavelengths for curing the UV-cured ink.
2. The structure of claim 1, wherein the LEL layer has a thickness
of up to 5 .mu.m.
3. The structure of claim 1, wherein the UV blocking layer
comprises organic charge transport molecules.
4. The structure of claim 1, wherein the organic charge transport
molecules comprise one or more of: N, N'-diphenyl-N,
N'-bis(3-methylphenyl); (1,1'-biphenyl)-4,4'-diamine;
N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine;
N,N'-bis(1-phenanthrene)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine;
N,N'-bis(phenanthren-9-yl)-N,N-bis(phenyl)-benzidine;
N,N'-Di-[(9-phenanthrenyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine;
4,7-Diphenyl-1,10-phenanthroline;
bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum,
tris-(8-hydroxyquinoline)aluminum; Tetracene; 4-phenyl; or
6-phenyl.
5. The structure of claim 1, wherein the UV blocking layer
comprises metal-oxide nano-particles.
6. The structure of claim 4, wherein the metal oxide nano-particles
comprise one or more of MoO.sub.3, MnO.sub.2, NiO, WO.sub.3, and
AlZnO.
7. The structure of claim 1, wherein a material of the UV blocking
layer has an energy gap with an absorption edge between 3.0 and
3.18 eV.
8. A display, comprising: a substrate having driving circuitry; a
plurality of light-emitting diodes structures disposed on a
substrate, each light emitting diode structure including a
light-emitting diode including an emissive electroluminescent layer
situated between two electrodes, a light extraction layer (LEL)
comprising a UV-cured ink, and a UV blocking layer between the LEL
and the light-emitting diode, the UV blocking layer having a
thickness of 50-500 nm and at least 90% absorption to UV light of
wavelengths for curing the UV-cured ink; and a plurality of
plateaus that separate light extraction layers of adjacent
light-emitting diodes structures.
9. The display of claim 8, wherein the LEL layer has a thickness of
up to 5 .mu.m.
10. The display of claim 8, wherein the UV blocking layer comprises
organic charge transport molecules.
11. The display of claim 8, wherein the UV blocking layer comprises
metal-oxide nano-particles.
12. The display of claim 8, wherein a top surface of the LEL
projects above a top surface of the plateaus.
13. The display of claim 8, wherein a top surface of the LEL is
substantially coplanar with a top surface of the plateaus.
14. A method for manufacturing a light-emitting diode (LED)
structure, the method comprising: depositing a UV blocking layer
over a light-emitting diode including an emissive
electroluminescent layer situated between two electrodes;
depositing a layer of UV-curable fluid over the UV blocking layer;
and curing the layer of UV-curable fluid with UV light to form a
light extraction layer (LEL) over the UV blocking layer, wherein
the UV blocking layer having a thickness of 50-500 nm and at least
90% absorption to UV light of wavelengths for curing UV-curable
fluid.
15. The method of claim 14, wherein depositing the layer of
UV-curable fluid comprises ejecting droplets of the UV-curable
fluid from a nozzle.
16. The method of claim 15, wherein the droplets are ejected to at
least partially fill a plurality of wells.
17. The method of claim 16, wherein depositing the layer of
UV-curable fluid comprises successively forming a plurality of
sublayers in each well.
18. The method of claim 17, wherein forming a sublayer of the
plurality of sublayers comprises ejecting one or more droplets of
the UV-curable fluid into the well and curing the fluid before
forming a subsequent sublayer.
19. The method of claim 18, wherein forming the sublayer in the
well comprises depositing a single droplet of the UV-curable fluid
into the well.
20. The method of claim 18, wherein forming the sublayer comprises
depositing multiple single droplets of the UV-curable fluid into
the well.
21. The method of claim 14, wherein the light extraction layer
(LEL) has a thickness of up to 5 .mu.m.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 16/685,944, filed on Nov. 15, 2019, which
claims priority to U.S. Provisional Application Ser. No.
62/931,760, filed on Nov. 6, 2019, the disclosures of which is
incorporated by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to fabrication of organic
light-emitting diode (OLED) display devices.
BACKGROUND
[0003] An organic light-emitting diode (OLED or Organic LED), also
known as an organic EL (organic electroluminescent) diode, is a
light-emitting diode (LED) in which the emissive electroluminescent
layer is a film of organic compound that emits light in response to
an electric current. This organic layer is situated between two
electrodes; typically, at least one of these electrodes is
transparent. OLEDs are used to create digital displays in devices
such as television screens, computer monitors, portable systems
such as smartwatches, smartphones, handheld game consoles, PDAs,
and laptops.
[0004] An OLED display can be driven with a passive-matrix (PMOLED)
or active-matrix (AMOLED) control schemes. In the PMOLED scheme,
each row (and line) in the display is controlled sequentially, one
by one, whereas AMOLED control uses a thin-film transistor
backplane to directly access and switch each individual pixel on or
off, allowing for faster response, higher resolution, and larger
display sizes.
[0005] AMOLED displays are attractive for high pixel density,
superior image quality, and thin form factor in comparison to
conventional LCD displays. AMOLED displays are self-emissive
devices that can be made with thin film process, on thin and
flexible substrates, and do not require backlights as used in LCD
displays. In addition to superior power efficiency over LCD
devices, AMOLED devices are noted for features such as
"Consuming-Power-only-when-Lighting-Up," and
"Consuming-only-the-needed-Power-Corresponding-to-the-Emitting-Intensity"-
. AMOLED displays have thus been viewed as an attractive display
technology for battery powered portable products.
SUMMARY
[0006] In one aspect, some implementations provide an organic
light-emitting diode (OLED) structure comprising: a stack of OLED
layers; a light extraction layer (LEL) comprising a UV-cured ink;
and a UV blocking layer between the LEL and the stack of OLED
layers.
[0007] Implementations may include one or more of the following
features. The LEL layer may have a thickness of up to 5 .mu.m and
the UV blocking layer may have a thickness of 50-500 nm. The UV
blocking layer may comprise organic charge transport molecules. The
UV blocking layer may comprise metal-oxide nano-particles. The
metal oxide nano-particles may comprise one or more of MoO3, MnO2,
NiO, WO3, and AlZnO.
[0008] The OLED structure may further comprise a substrate, a
dielectric layer on the substrate having an array of well
structures, wherein each well structure includes oblique side walls
and a floor, and the well structures are separated by plateaus, and
the LEL at least partially fills the wells. The OLED structure may
further comprise a mirror layer between the dielectric layer and
the stack of OLED layers.
[0009] A top surface of the LEL may be substantially coplanar with
a top surface of the plateaus. A top surface of the LEL may project
above a top surface of the plateaus.
[0010] In another aspect, some implementations provide a method for
manufacturing an organic light-emitting diode (OLED) structure, the
method comprising: depositing a UV blocking layer over a stack of
OLED layers; depositing a layer of UV-curable fluid over the UV
blocking layer; and curing the layer of UV-curable fluid with UV
light to form a light extraction layer (LEL) over the UV blocking
layer.
[0011] Depositing the layer of UV-curable fluid may comprise
ejecting droplets of the UV-curable fluid from a nozzle. The
droplets may be ejected to at least partially fill a plurality of
wells. Depositing the layer of UV-curable fluid may comprise
successively forming a plurality of sublayers in each well. Forming
a sublayer of the plurality of sublayers may comprise ejecting one
or more droplets of the UV-curable fluid into the well and curing
the fluid before forming a subsequent sublayer. Forming the
sublayer in the well may comprise depositing a single droplet of
the UV-curable fluid into the well. Forming the sublayer may
comprise depositing multiple single droplets of the UV-curable
fluid into the well. The light extraction layer (LEL) may have a
thickness of up to 5 .mu.m and the UV blocking layer may have a
thickness of 50-500 nm.
[0012] Advantages may include, but are not limited to, one or more
of the following.
[0013] One or more layers in an LED device, e.g., a light
extraction layer (LEL), may be fabricated using UV-curable inks.
This permits the use of droplet ejection techniques that use
UV-curing to deposit the layer(s), which in turn can permit
manufacturing at higher throughput and/or lower cost.
[0014] The details of one or more aspects of the subject matter
described in this specification are set forth in the accompanying
drawings and the description below. Other features, aspects, and
advantages will become apparent from the description, the drawings,
and the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIGS. 1A to 1B show examples of schematic cross-sectional
views of a top emission OLED pixel with a patterned/structured
light extraction layer of index matching material.
[0016] FIG. 1C shows an example of a schematic cross-sectional view
of an array of top emission OLED pixels with the
patterned/structured light extraction layer of index matching
material.
[0017] FIG. 2 shows an example of a schematic cross-sectional view
of a top emission OLED pixel with an UV-Blocking layer underneath
the patterned/structured light extraction layer.
[0018] FIGS. 3A-3G show examples of organic materials suitable for
the UV-blocking layer.
[0019] FIG. 4 illustrates of filling an OLED structures with a
UV-curable ink droplet.
[0020] Like reference symbols in the various drawings indicate like
elements.
DETAILED DESCRIPTION
[0021] An OLED is a two-terminal thin film device with a stack of
organic layers including a light emitting organic layer sandwiched
between two electrodes. At least one of the electrodes is
transparent, thus allowing the emitted light to pass through.
Typically, an encapsulation or passivation covers the OLED stack.
Due to mismatch of optic parameters in the OLED stack and the
encapsulation or passivation layer thereon, significant efficiency
loss can occur. In addition, in a conventional device configuration
with a stack of planar layers, significant light can be absorbed by
the support substrate or escape at low angles.
[0022] An internal quantum efficiency (IQE) quantifies the ratio of
the number of converted photons and the number of input electrons
whereas the external quantum efficiency (EQE) indicates the ratio
of number of emitted and extracted photons that have been converted
from the number of input electrons. In this context, even though
IQE can be almost perfect, EQE can be far from ideal because
significant amount of emitting light can be trapped inside the OLED
display or waveguided along horizontal direction (in parallel to
the substrate). In one example, even with ideal IQE (e.g., about
100% for phosphorescent materials), an EQE of about 20 to 25% has
been realized in commercial OLED with conventional device
configurations. In addition to optical energy loss to output
emission, the light trapped inside can also be waveguided to
neighbor pixels and can be scattered into front view, causing
"light leakage" or "optical crosstalk", and reducing display
sharpness and contrast.
[0023] Referring to FIGS. 1A to 1C, one solution to this problem is
to form the OLED stack in a well structure 103, with mirrors along
the bottom 103B and portions of the oblique sidewalls 103A of the
well and a patterned light extraction layer 108 filling the well.
Examples of a top-emitting OLED structure are shown in FIGS. 1A and
1B. The OLED structure is formed on a support substrate 100, which
optionally can be removed following the fabrication process.
[0024] The well can be provided by a recess in a dielectric pixel
defining layer (PDL) 111 that is disposed over the support
substrate 100. The pixel defining layer (PDL) 111 can be formed
after a pixel driving circuit made with one or more thin film
transistors (TFTs) is formed on the substrate 100. The PDL 111 can
be a polymeric material, e.g., can be formed by depositing a layer
of photoresist material. The layer of polymeric material is then
selectively patterned to form recesses that will provide the wells.
The top surface PDL provides a plateau that separates the
individual OLED subpixels within the devices.
[0025] A conductive anode 101 is formed at the bottom 103B of or
below the well structure 103. The anode 101 can extend up a portion
of the oblique side walls 103A of the well. The anode 101 can be
silver and/or another reflective conductive material, or can be
from a conductive non-reflective material that is coated with a
conductive optically reflective material. In some implementations,
the anode 101 is sufficiently reflective to serve as a mirror.
[0026] The anode 101 can be processed before the PDL 111 and formed
after a thin film transistor (TFT) is formed on substrate 100. For
example, the thin film transistor can include conductive terminals
for the gate, drain and source regions of the transistor. Here, the
anode 101 can be disposed over the TFT and arranged in electrical
contact with the drain of the TFT by, for example, conductive vias
through a dielectric layer.
[0027] As illustrated in FIGS. 1A and 1B, the anode 101 can be
formed after the pixel defining layer (PDL) 111 is deposited and
patterned. A portion of the anode 101 can extend partially or fully
up the oblique sidewalls 103A into the region of the PDL slope, for
example, e.g., in area 101A. Thus, the anode 101 is spaced from the
top of the recess (i.e., the top of the plateau). As a result, the
mirror provided by the anode 101 can extend partially or fully up
the oblique sidewalls 103A.
[0028] Alternatively, the anode 101 can be deposited before the PDL
111. A portion of the anode 101 can extend below the pixel defining
layer (PDL) 111. For example, the anode 202 can be deposited only
in the area of the flat bottom region 103B. In this case, a
separate mirror layer can be formed that covers the bottom 103B of
the well and extends partially or fully up the oblique sidewalls
103A.
[0029] Assuming the anode 101 is formed over the PDL 111, a
transparent dielectric layer 102 can be formed over a portion of
the anode 101 and over exposed portions of the PDL 111. The
aperture in the dielectric layer 102 will define an emission area
for the OLED. The dielectric layer 102 can be formed using
photoresist type of material. As illustrated, the dielectric layer
102 can cover the anode 101 at the outer edge of the bottom 103B of
the well and on the oblique sidewalls 103A. But otherwise,
extension of the dielectric layer 102 into the bottom 103B of the
well is generally minimized.
[0030] An OLED layer stack 104 that includes a light emission zone
107 is formed over the anode 101. The OLED layer stack 104, for
example, in a top emitting OLED stack, can include an electron
injection layer (EIL), an electron transport layer, a hole blocking
layer, a light emissive layer (EML), an electron blocking layer
(EBL), a hole transport layer (HTL), and a hole injection layer
(HIL), although this is just one possible set of layers. The lowest
layer of the OLED stack 104 is in electrical contact with the anode
101, either directly or through a conductive mirror layer disposed
on the anode. The portion of the light emissive layer (EML) above
the region of the anode 101 exposed through the aperture in the
dielectric layer 102 can provide the light emission zone 107.
[0031] Another transparent electrode 106, e.g., the cathode, can be
formed over the OLED stack 104. The top layer of the OLED stack 104
is in electrical contact with the cathode 106. The transparent
electrode 106 is below the
[0032] A capping layer (CPL) can be placed on top of the cathode
106. CPLs are typically organic materials similar to non-EML OLED
layers. A passivation layer can be deposited on the CPL layer.
[0033] The electrode 106 can be a continuous layer covering the
entire display and connecting to all pixels. In comparison, the
anode 101 is not made continuous so that independent control of
each OLED can be achieved. This permits subpixel control; each
pixel can include three subpixels of different colors, e.g., R, G,
and B.
[0034] In implementations in which the anode 101 serves as sidewall
mirrors (e.g., deposited along the slopes of the PDL), the emission
area can be further controlled by placing the dielectric layer 102
over such sidewall mirrors. The extent of the dielectric layer 102
can be varied. In general, OLED emission is highly dependent on
layer thicknesses. The dielectric layer 102 allows suppression of
emission from the OLED structure formed on the sidewalls (during
device fabrication) where the thickness differences between
sidewall and bottom of the well can result in inconsistent emission
characteristics, including emission spectra and color
coordinates.
[0035] The OLED structure further has an index-matching filling
material 108 disposed inside the concave area of well structure
103. The top surface 108a of the index-matching filling
material/layer can be flat (see FIG. 1A) or curved/non-planar (see
FIG. 1B). Through a proper device design, by introducing the mirror
around the OLED emission zone and the light extraction layer
(through index-matching material in the concavity), EQE can be
improved by a factor of 2-3 from the conventional OLED design. As a
result, the power consumption of an OLED display in portable
applications can be reduced by a commensurate factor of 2 to 3,
which allows using a smaller, lighter weight rechargeable battery
and achieves faster charging time than that used in the current
mobile devices such as touch-screen phones, pads, and laptops. In a
similar vein, the same mobile device with high efficient OLED
display can run a much longer time (for example, slightly less than
a factor of 2-3) on a single charge of the original battery.
Another benefit of such highly efficient pixel architecture is
longer lifetime of the devices as the pixels will achieve desired
brightness with lower current and voltage, which leads to lower
degradation phenomena. Yet another benefit is the technical
feasibility of achieving higher pixel density as the higher EQE
enables smaller emitting area to achieve the same brightness as
before.
[0036] However, the newly added light extraction layer (LEL) may
not be manufacturable at a commercially viable price using
conventional techniques. This added layer calls for additional
processes and corresponding tools. In particular, it would be
desirable to deposit the filler layer using droplet ejection
techniques, e.g., a 3D printing techniques using droplet ejection.
The liquid material to be ejected as droplets is often called an
"ink", although it need not (and typically would not) include
pigmentation.
[0037] One type of filling "ink" promising for the LEL is a
solution including organo-metallic molecules or metal-oxide
nano-particles with or without surface passivated with organic
linking units (named "MO ink" in more detail below). This type of
filling ink has high solid loading (e.g., high percentage ratio of
forming solid/ink volume which may be in slurry mixture) and
tunable dielectric constant to potentially maximize the output
emission. The curing method involves exposing the filling inks to
UV radiation along with a duration of post annealing time at an
elevated temperature. Unfortunately, UV exposure dose required for
curing of the LEL precursor material can be harmful to the OLED
structure underneath.
[0038] To address the manufacturing challenge caused by the
UV-curing ink for the index matching material of the light
extracting layer (LEL), the present disclosure proposes solutions
that introduces a UV-blocking layer underneath the LEL layer so
that UV-curable inks can be adopted for the patterned LEL layer
without compromising the performance of the OLED stack underneath.
Both organic and inorganic materials can be used for the
UV-blocking layer.
[0039] In addition, an appropriate surface profile or a hydrophobic
surface can be provided that enables mis-aligned ink droplets
during manufacturing to fall back into the well by means of gravity
and the surface property of the top of the dome (as discussed in
further detail in FIG. 4B below). These techniques can be used in
conjunction with or independent of the UV-blocking layer deposited
over the OLED stack (as discussed in further detail in FIG. 2
below).
[0040] Moreover, with the inkjet process of the present disclosure,
a patterned LEL layer can be formed with a gradient in the index of
refraction. The inkjet printing or slot-die coating with multiple
coating steps enables the patterned LEL with gradient index and
with integration with the covering glass (or touch panel in on-cell
touch configuration).
[0041] FIG. 1C shows the cross-sectional view of an array 110 of
OLED pixels arranged in a layered structure 112 on substrate
100.
[0042] Further referring to FIG. 2, a cross-section view of an OLED
structure 200A illustrates an UV-blocking layer 202 between the
top-surface 104A of the OLED layer 104 and the patterned LEL layer
108. Except as discussed below, the OLED structure 200A can be
similar to the OLED structure 100A and 100B discussed with
reference to FIGS. 1A and 1B. The OLED structure 200A is formed on
a substrate 100 and includes an array of well structures 103, each
including the bottom region 103B and sidewall region 103A. The well
structures 103 are separated by the plateau 105. As discussed
above, the dielectric layer 102 is formed on the slopes of the PDL
111 and extends to the edge area of the bottom region 103B,
although extension into the recess bottom region is possible but
generally minimized.
[0043] The anode 101 is formed in the bottom region 103B and can
extend partially up the sidewalls 103A. As noted above, the anode
101 can be reflective, or can be a conductive non-reflective
material that is coated with a conductive optically reflective
material.
[0044] In more detail, the floor of each well structure 103 is a
bottom flat surface above substrate 100, which represents the flat
top metal surface formed during thin film transistor (TFT) circuit
process (such as the metal layer used for source and drain
electrode of a thin film transistor TFT). A mirror layer 101M can
be formed over anode 101. The mirror layer 101M may use silver (Ag)
or other reflective metal. Alternatively, the anode can be a
transparent conductive material deposited over a conductive or
non-conductive reflective layer. For example, the anode 101 can be
a conductive indium tin oxide (ITO) deposited on top of the
reflective mirror layer 101M. For an anode of an OLED, internal
total reflection is desired.
[0045] In some implementations, the anode is limited to the bottom
region 103B. In some implementations, the anode also extends
partially or fully up the sloped sidewalls 103A of the recess. In
some implementations, the mirror layer 101M is a conductive
reflective metal that extends onto the sloped sidewalls 103A of the
recess. This conductive reflective metal, which is formed on top of
the initial anode, can lead to a potential new anode on the
bottom/floor region of the pixel. As discussed above, a transparent
dielectric layer 102 can be deposited and patterned to eliminate
electrical excitation and light emission from the sidewall region
103A.
[0046] The cathode 106 can be a continuous layer that is
unpatterned and transparent. In a top emitting configuration, the
light extraction layer (LEL) 108 is on top of the UV-blocking layer
202, which, in turn, is on top of the cathode 106. In this
configuration, a passivation layer can be deposited on the capping
layer (CPL) layer which is right above the cathode 106.
[0047] As illustrated in, for example, FIGS. 1A to 1C, the LEL
layer 108 is disposed over the OLED stack 104 and top cathode 106.
The LEL layer 108 at least partially fills each well. In some
implementations, the LEL layer 108A "overfills" the well so as to
form a convex top surface 109 that projects above the top surface
of the plateaus 105.
[0048] Between the top surface 104A the OLED layer stack 104 and
the patterned LEL 108 is a UV-blocking layer 202. The UV-blocking
layer 202 can be formed with a similar process used for forming an
OLED layer (such as physical vapor deposition), or by a different
process (such as chemical vapor deposition). The UV blocking layer
202 can also be formed by a coating method, e.g., spin-coating. The
UV blocking layer 202 has strong absorption at the UV wavelength
used for processing the LEL layer 108/108a (e.g., at least 90% to
100% absorption). The UV-blocking layer 202 can be relatively thin,
e.g., 50 to 500 nm thick. Examples of materials for the UV blocking
layer 202 can be found below. The desired process for depositing
the UV blocking layer may depend on the material chosen. In
general, an evaporative process can be advantageous because
sputtering or chemical vapor deposition (CVD) may lead to
additional device damaging elements (for example, plasma in
sputtering, contaminants and possibly plasma in CVD/PECVD).
[0049] Although a passivation layer can be deposited on the CPL
layer, in some implementations the UV blocking layer also functions
as the passivation layer and a separate passivation layer on the
CPL layer is not required. In this case, the UV blocking layer can
function as permeation blocking layer for the potential wet LEL
deposition, like ink jet printing (IJP).
[0050] Both organic and inorganic materials can be used for the
UV-blocking layer. Example of organic materials that can be used
for UV-blocking layer include:
N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine, TPD (3.18 eV);
N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine, NPB
(3.0 eV); N,N'-Bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine,
PAPB (or PPD); 4,7-Diphenyl-1,10-phenanthroline, BPhen (3.0 eV);
Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum, BAlq
(3.0 eV), Tris-(8-hydroxyquinoline)aluminum, Alq (2.8 eV);
Tetracene, C8H12 (3.0 eV); 4-phenyl, 4P (3.1 eV); 6-phenyl, 6P (3.1
eV), and the like (number in the bracket representing absorption
edge). The molecular structures of these structures are shown in
FIG. 3.
[0051] This type of organic materials is often known as charge
transport molecules (either hole transport or electron transport)
in the field of organic thin film devices such as organic light
emitting diodes. The energy gap can be tuned to desired wavelength
by molecular structure engineering while maintain the
processability (for example, by thermal deposition) of the
material. Example includes TPD, NPB, and PAPB (or PPD). By
replacing -methylphenyl group with -naphthyl group or -phenanthrene
group, the onset of the absorption band can be effectively tuned.
In addition to tuning the phenyl group, bandgap engineering can
also be achieved by replacing the --H atom on benzene ring with
--OH or --CN group. Another characteristic of this type of organic
materials is the high absorption coefficients. For example,
absorption coefficients over 10.sup.5 cm.sup.-1 are often seen in
this type of molecules due to its direct type of energy gap between
UV absorption bands. At this absorption level, UV radiation
intensity can be attenuated by 10 times with a UV-blocking layer of
100 nm thickness and by 100 times with a UV-blocking film of 200 nm
in thickness. These materials are thus excellent candidates for the
UV-blocking layer (202) underneath the LEL (105/105a). When
selecting the composition with multiple sub-groups comprising
different number of phenyl rings (for example, NPB),
broad-absorption can be achieved over entire UV radiation from a Hg
lamp (from UV-I to UV-III bands). Since the organic material used
for the UV blocking layer can also be used for the charge transport
layer in the OLED stack, the same deposition tool can be used.
[0052] The UV blocking layer can also be formed with another type
of organic molecules known as engineering polymers. Examples
include, but are not limited, polystyrenes, polycarbonates, PMMA
and their derivatives. This type of engineering polymers have
absorption edge close to 3.1 eV and block UV light effectively.
[0053] Examples of inorganic material suitable for the UV-blocking
layer 202 include MoO.sub.3, MnO.sub.2, NiO, WO.sub.3, AlZnO, and
alloy oxides comprising these materials. These films can be
fabricated with thermal or other type of physical deposition method
without damaging the OLED device underneath.
[0054] Combination of the materials as discussed above in multiple
layer stack or in blend form can also be used for the UV-absorption
layer 202. The thickness of the UV-blocking layer can be chosen in
range of 50-500 nm, depending on the absorption coefficient of the
UV-blocking layer and the attenuation level for the UV-dose needed
for the LEL ink curing.
[0055] Metal-oxide and/or organometallic compound based LEL layer
105/105a can be formed with inks with corresponding organometallic
precursors, examples of such inks include ZrO, ZrOC, AlO, AlOC,
TiO, TiOC, ZnO, ZnOC, and the combination in blend form (denoted as
MO/MOC inks in the following text). Such compounds are
characterized with refractive index higher than that of the organic
layers in OLED stack. Keeping certain amount of carbon atoms in the
forming LEL (i.e., the metal-OC compounds above) may achieve the
index matching between the LEL and OLED stack. As a reference
point, metal oxide such as ZrO or TiO2 can have refraction index
substantially higher than a target value (for example, n=1.82).
With the amount of carbon (C), the n can be tuned within a range
from approximately 2.2 down to approximately 1.8.
[0056] The solid loading of the metal-oxide nano-particles are
typically in range of 20-80% (e.g., percentage ratio of forming
solid/ink volume). Alcohols such as isopropanol alcohol (IPA) and
glycol ethers such as propylene glycol methyl ether acetate (PGMEA)
can be used as the solvents for this type of MO/MOC inks. To reduce
the damage to the OLED underneath, H.sub.2O molecules can be
removed from the solvent during the ink preparation. Printing the
ink under low humidity (such as under dry air, N2 or Ar) or with a
moderate substrate temperature in 40-60.degree. C. range may also
be used to minimize performance reduction of the OLED underneath.
In one illustration, using a 1-10 pl nozzle head, a drop volume may
be achieved for the emitting pixels for portable display products
(.about.25 um.times.25 um.times.2 um.about.10.sup.-15
m.sup.3.about.10.sup.-12 l=1 pl). Larger nozzle head can be used
for desk-top and wall-hanging displays with larger pixel pitches.
The desirable solid content can be achieved with smaller nozzle
head with multiple ink drops at each stop, or with a large nozzle
head with single drop for each well. Nozzle array is often used to
improve the throughput to achieve .about.1 minute/substrate tact
time for mass-production.
[0057] For example, an LEL forming process over the UV-blocking
layer includes a printing process, a solvent removal and pre-dry
process under a moderate temperature (50-100.degree. C.) for a
brief time (a few minutes). Pre-baking in a chamber under
controlled environment and with reduced pressure can reduce the
process time. The dried LEL array can then undergo an UV exposure
for crosslink with dose in .about.0.1-10 J/cm.sup.2. A final
setting process is carried out at elevated temperature (for
example, in 70-130.degree. C. for 5-30 minutes).
[0058] Referring to FIG. 4, in a 3D printing process, the LEL layer
108 can be formed by successively depositing and curing multiple
sublayers, with the stack of sublayers providing the LEL layer 108.
A sublayer can correspond to a single scan of a printhead 400 and
curing of the ejected droplets 402 from the printhead. In some
implementations, for each well, a sublayer of the LEL can be formed
with multiple drops of the ink. Alternatively, each sublayer within
the LEL layer 108 for a given well can be formed with a single drop
per sublayer; due to surface tension the drop can spread out to
cover the width of the well. In some implementations, the well is
filled with the liquid precursor for the LEL and the entire well is
cured at once, rather than sublayer by sublayer.
[0059] With inkjet process of the present disclosure, a patterned
LEL layer can be formed with a gradient from top to bottom in the
index of refraction. In particular, the inkjet printing or slot-die
coating with multiple coating steps enables the patterned LEL with
gradient index and with integration with the covering glass (or
touch panel in on-cell touch configuration). The drops in the
consecutive scans can use inks with a consecutively lower
refraction index than the previous scan (by increasing the C/O
ratio, or by changing MO composition with multiple metals with
different refraction index). The wetting effect of the dropping ink
on the receiving MO/MOC film can be used for further tuning the
gradient profile. Eventually a patterned LEL array can be formed
with the refraction index matching to that of the OLED stack (with
refraction index of .about.1.75-1.82), and the index of the LEL top
surface with an index matching to a protection glass (such as, for
example, the Gorilla glass, a Corning brand, used in many mobile
phones with refraction index .about.1.52). For example, the
cross-section profile of the gradient index can be controlled by
ink properties, and by the detail printing conditions. Thus, with a
dedicated design, the desired view angle dependencies can be
achieved for different applications. For example, larger view angle
is preferred for monitors and wall-hanging large size TVs. Narrow
view angle is preferred for entertaining displays in commercial
airplanes. Moderate view angle with strong emission intensity in
front view direction is preferred for palm size mobile phones of
which the optimized front view performance allows longer operation
time per battery charging.
[0060] As used herein, the term "exemplary" means "serving as an
example, instance, or illustration," and should not be construed as
preferred or advantageous over other configurations disclosed
herein.
[0061] As used herein, the terms "about" and "approximately" are
meant to cover variations that may exist in the upper and lower
limits of the ranges of values, such as variations in properties,
parameters, and dimensions. In one non-limiting example, the terms
"about" and "approximately" mean plus or minus 10 percent or
less.
[0062] The specific embodiments described above have been shown by
way of example, and it should be understood that these embodiments
may be susceptible to various modifications and alternative forms.
It should be further understood that the claims are not intended to
be limited to the particular forms disclosed, but rather to cover
all modifications, equivalents, and alternatives falling within the
spirit and scope of this disclosure.
* * * * *