U.S. patent application number 17/579454 was filed with the patent office on 2022-07-21 for color conversion panel and display device including the same.
The applicant listed for this patent is Samsung Display Co., LTD.. Invention is credited to Jeong Ki KIM, Jong-Hoon Kim, Seong Yeon Lee, Hwa Yeul Oh, Yeo Geon Yoon.
Application Number | 20220229214 17/579454 |
Document ID | / |
Family ID | 1000006110276 |
Filed Date | 2022-07-21 |
United States Patent
Application |
20220229214 |
Kind Code |
A1 |
KIM; Jeong Ki ; et
al. |
July 21, 2022 |
COLOR CONVERSION PANEL AND DISPLAY DEVICE INCLUDING THE SAME
Abstract
A color conversion panel including: a first substrate; light
blocking members disposed on the first substrate while being
separated from each other; a first color conversion layer, a second
color conversion layer, and a transmissive layer that are
respectively disposed between the light blocking members; and a
capping layer disposed on the first color conversion layer, the
second color conversion layer, and the transmissive layer. The
capping layer is a multi-layer structure containing SiON having
different compositions.
Inventors: |
KIM; Jeong Ki; (Hwaseong-si,
KR) ; Oh; Hwa Yeul; (Hwaseong-si, KR) ; Yoon;
Yeo Geon; (Seoul, KR) ; Kim; Jong-Hoon;
(Seoul, KR) ; Lee; Seong Yeon; (Asan-si,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Display Co., LTD. |
Yongin-si |
|
KR |
|
|
Family ID: |
1000006110276 |
Appl. No.: |
17/579454 |
Filed: |
January 19, 2022 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G02B 5/201 20130101 |
International
Class: |
G02B 5/20 20060101
G02B005/20 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 20, 2021 |
KR |
10-2021-0008133 |
Claims
1. A color conversion panel comprising: a first substrate; light
blocking members disposed on the first substrate while being
separated from each other; a first color conversion layer, a second
color conversion layer, and a transmissive layer that are
respectively disposed between the light blocking members; and a
capping layer disposed on the first color conversion layer, the
second color conversion layer, and the transmissive layer, wherein
the capping layer is a multi-layer structure containing SiON having
different compositions.
2. The color conversion panel of claim 1, wherein the capping layer
includes a second layer and a first layer disposed between the
second layer and the color conversion layer.
3. The color conversion panel of claim 2, wherein, in the first
layer, a nitrogen (N) content and an oxygen (O) content are
different from an N content and an O content of the second
layer.
4. The color conversion panel of claim 2, wherein a nitrogen (N)
content of the first layer is greater than that of the second
layer.
5. The color conversion panel of claim 2, wherein an oxygen (O)
content of the second layer is greater than that of the first
layer.
6. The color conversion panel of claim 2, wherein the first layer
contains SiON with an O/Si molar ratio of 1.0 to 1.2.
7. The color conversion panel of claim 2, wherein the second layer
contains SiON with an O/Si molar ratio of 1.7 to 1.9.
8. The color conversion panel of claim 2, wherein a thickness of
the first layer is less than that of the second layer.
9. The color conversion panel of claim 8, wherein a thickness of
the first layer is 5% to 20% of a thickness of the second
layer.
10. The color conversion panel of claim 2, wherein the first layer
directly contacts the first color conversion layer, the second
color conversion layer, and the transmissive layer.
11. The color conversion panel of claim 1, further comprising: a
first color filter disposed between the first substrate and the
first color conversion layer; a second color filter disposed
between the first substrate and the second color conversion layer;
and a third color filter disposed between the first substrate and
the transmissive layer.
12. The color conversion panel of claim 11, further comprising a
dummy color filter disposed in a same layer as the third color
filter, while overlapping the light blocking member in a direction
that is perpendicular to a plane of the substrate, wherein the
third color filter and the dummy color filter are blue color
filters.
13. The color conversion panel of claim 11, further comprising: a
low reflective layer disposed between the first color filter, the
second color filter, and the third color filter; and the first
color conversion layer, the second color conversion layer, and the
transmissive layer.
14. The color conversion panel of claim 13, further comprising a
low refractive capping layer disposed while contacting the low
refractive layer.
15. A display device comprising: a color conversion panel; and a
display panel disposed while overlapping the color conversion
panel, wherein the color conversion panel comprises: a first
substrate; light blocking members disposed on the first substrate
and separated from each other; a first color conversion layer, a
second color conversion layer, and a transmissive layer that are
respectively disposed between the light blocking members; and a
capping layer disposed on the first color conversion layer, the
second color conversion layer, and the transmissive layer; and the
capping layer has a multi-layered structure including SiON having
different compositions.
16. The display device of claim 15, wherein the capping layer
comprises a second layer, and a first layer that is disposed
between the second layer and the color conversion layer.
17. The display device of claim 16, wherein: a nitrogen (N) content
of the first layer is higher than that of the second layer; and an
oxygen (O) content of the second layer is higher than that of the
first layer.
18. The display device of claim 16, wherein the first layer
includes SiON with an O/Si molar ratio of 1.0 to 1.2.
19. The display device of claim 16, wherein the second layer
includes SiON with an O/Si molar ratio of 1.7 to 1.9.
20. The display device of claim 16, wherein a thickness of the
first layer is 5% to 20% of a thickness of the second layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority from and the benefit of
Korean Patent Application No. 10-2021-0008133, filed on Jan. 20,
2021, which is hereby incorporated by reference for all purposes as
if fully set forth herein.
BACKGROUND
Field
[0002] Embodiments of the invention relates generally to a color
conversion panel and a display device including the same.
Discussion of the Background
[0003] A light emitting element is an element in which an exciton
is formed by combining a hole supplied from an anode and an
electron supplied from a cathode in an emission layer formed
between the anode and the cathode, and light is emitted while the
exciton is stabilized.
[0004] Since light emitting elements have various desirable
characteristics, such as a wide viewing angle, fast response speed,
a small thickness, and low power consumption, they are widely
applied to various electric and electronic devices such as
televisions, monitors, and mobile phones.
[0005] Recently, a display device including a color conversion
panel has been proposed to implement a high-efficiency display
device. The color conversion panel converts incident light into
different colors. In this case, the light source usually emits blue
light, and the blue light is color converted to red and green,
respectively, or transmitted as blue light itself.
[0006] The above information disclosed in this Background section
is only for enhancement of understanding of the background of the
invention, and therefore it may contain information that does not
form the prior art that is already known in this country to a
person of ordinary skill in the art.
SUMMARY
[0007] Embodiments of the invention provide a color conversion
panel that solves a problem of stain generation while increasing
color conversion efficiency, and a display device including the
same.
[0008] Additional features of the inventive concepts will be set
forth in the description which follows, and in part will be
apparent from the description, or may be learned by practice of the
inventive concepts.
[0009] An embodiment of the invention provides a color conversion
panel according including: a first substrate; light blocking
members that are disposed on the first substrate while being
separated from each other; a first color conversion layer, a second
color conversion layer, and a transmissive layer that are
respectively disposed between the light blocking members; and a
capping layer that is disposed on the first color conversion layer,
the second color conversion layer, and the transmissive layer. The
capping layer is a multi-layer structure containing SiON having
different compositions.
[0010] The capping layer may include a second layer and a first
layer disposed between the second layer and the color conversion
layer.
[0011] In the first layer, a nitrogen (N) content and an oxygen (O)
content may be different from an N content and an O content of the
second layer.
[0012] The N content of the first layer may be higher than that of
the second layer.
[0013] The O content of the second layer may be higher than that of
the first layer
[0014] The first layer may contain SiON with an O/Si molar ratio of
1.0 to 1.2.
[0015] The second layer may contain SiON with an O/Si molar ratio
of 1.7 to 1.9.
[0016] The thickness of the first layer may be less than that of
the second layer.
[0017] A thickness of the first layer may be 5% to 20% of a
thickness of the second layer.
[0018] The first layer may be in direct contact with the first
color conversion layer, the second color conversion layer, and the
transmissive layer.
[0019] Another embodiment of the invention provides a display
device including: a color conversion panel; and a display panel
that is disposed while overlapping the color conversion panel. The
color conversion panel includes: a first substrate; light blocking
members that are disposed on the first substrate and are separated
from each other; a first color conversion layer, a second color
conversion layer, and a transmissive layer that are respectively
disposed between the light blocking members; and a capping layer
that is disposed on the first color conversion layer, the second
color conversion layer, and the transmissive layer, and the capping
layer has a multi-layered structure including SiON having different
compositions.
[0020] The capping layer may include a second layer, and a first
layer that is disposed between the second layer and the color
conversion layer.
[0021] A nitrogen (N) content of the first layer may be greater
than that of the second layer, and an oxygen (O) content of the
second layer may be greater than that of the first layer.
[0022] The first layer may include SiON with an O/Si molar ratio of
1.0 to 1.2.
[0023] The second layer may include SiON with an O/Si molar ratio
of 1.7 to 1.9.
[0024] A thickness of the first layer may be 5% to 20% of a
thickness of the second layer.
[0025] According to the embodiments, the color conversion panel
that can solve a problem of stain generation while increasing color
conversion efficiency, and the display device including the same
can be provided.
[0026] It is to be understood that both the foregoing general
description and the following detailed description are illustrative
and explanatory and are intended to provide further explanation of
the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The accompanying drawings, which are included to provide a
further understanding of the invention and are incorporated in and
constitute a part of this specification, illustrate illustrative
embodiments of the invention, and together with the description
serve to explain the inventive concepts.
[0028] FIG. 1 is a schematic cross-sectional view of a color
conversion panel according to an present embodiment.
[0029] FIG. 2 illustrates some of the color conversion layer and
the capping layer in FIG. 1 in detail.
[0030] FIG. 3 illustrates a display device according to an
embodiment.
DETAILED DESCRIPTION
[0031] In the following description, for the purposes of
explanation, numerous specific details are set forth in order to
provide a thorough understanding of various embodiments or
implementations of the invention. As used herein "embodiments" and
"implementations" are interchangeable words that are non-limiting
examples of devices or methods employing one or more of the
inventive concepts disclosed herein. It is apparent, however, that
various embodiments may be practiced without these specific details
or with one or more equivalent arrangements. In other instances,
well-known structures and devices are shown in block diagram form
in order to avoid unnecessarily obscuring various embodiments.
Further, various embodiments may be different, but do not have to
be exclusive. For example, specific shapes, configurations, and
characteristics of an embodiment may be used or implemented in
another embodiment without departing from the inventive
concepts.
[0032] Unless otherwise specified, the illustrated embodiments are
to be understood as providing illustrative features of varying
detail of some ways in which the inventive concepts may be
implemented in practice. Therefore, unless otherwise specified, the
features, components, modules, layers, films, panels, regions,
and/or aspects, etc. (hereinafter individually or collectively
referred to as "elements"), of the various embodiments may be
otherwise combined, separated, interchanged, and/or rearranged
without departing from the inventive concepts.
[0033] The use of cross-hatching and/or shading in the accompanying
drawings is generally provided to clarify boundaries between
adjacent elements. As such, neither the presence nor the absence of
cross-hatching or shading conveys or indicates any preference or
requirement for particular materials, material properties,
dimensions, proportions, commonalities between illustrated
elements, and/or any other characteristic, attribute, property,
etc., of the elements, unless specified. Further, in the
accompanying drawings, the size and relative sizes of elements may
be exaggerated for clarity and/or descriptive purposes. When an
embodiment may be implemented differently, a specific process order
may be performed differently from the described order. For example,
two consecutively described processes may be performed
substantially at the same time or performed in an order opposite to
the described order. Also, like reference numerals denote like
elements.
[0034] When an element, such as a layer, is referred to as being
"on," "connected to," or "coupled to" another element or layer, it
may be directly on, connected to, or coupled to the other element
or layer or intervening elements or layers may be present. When,
however, an element or layer is referred to as being "directly on,"
"directly connected to," or "directly coupled to" another element
or layer, there are no intervening elements or layers present. To
this end, the term "connected" may refer to physical, electrical,
and/or fluid connection, with or without intervening elements.
Further, the D1-axis, the D2-axis, and the D3-axis are not limited
to three axes of a rectangular coordinate system, such as the x, y,
and z-axes, and may be interpreted in a broader sense. For example,
the D1-axis, the D2-axis, and the D3-axis may be perpendicular to
one another, or may represent different directions that are not
perpendicular to one another. For the purposes of this disclosure,
"at least one of X, Y, and Z" and "at least one selected from the
group consisting of X, Y, and Z" may be construed as X only, Y
only, Z only, or any combination of two or more of X, Y, and Z,
such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the
term "and/or" includes any and all combinations of one or more of
the associated listed items.
[0035] Although the terms "first," "second," etc. may be used
herein to describe various types of elements, these elements should
not be limited by these terms. These terms are used to distinguish
one element from another element. Thus, a first element discussed
below could be termed a second element without departing from the
teachings of the disclosure.
[0036] Spatially relative terms, such as "beneath," "below,"
"under," "lower," "above," "upper," "over," "higher," "side" (e.g.,
as in "sidewall"), and the like, may be used herein for descriptive
purposes, and, thereby, to describe one elements relationship to
another element(s) as illustrated in the drawings. Spatially
relative terms are intended to encompass different orientations of
an apparatus in use, operation, and/or manufacture in addition to
the orientation depicted in the drawings. For example, if the
apparatus in the drawings is turned over, elements described as
"below" or "beneath" other elements or features would then be
oriented "above" the other elements or features. Thus, the term
"below" can encompass both an orientation of above and below.
Furthermore, the apparatus may be otherwise oriented (e.g., rotated
90 degrees or at other orientations), and, as such, the spatially
relative descriptors used herein interpreted accordingly.
[0037] The terminology used herein is for the purpose of describing
particular embodiments and is not intended to be limiting. As used
herein, the singular forms, "a," "an," and "the" are intended to
include the plural forms as well, unless the context clearly
indicates otherwise. Moreover, the terms "comprises," "comprising,"
"includes," and/or "including," when used in this specification,
specify the presence of stated features, integers, steps,
operations, elements, components, and/or groups thereof, but do not
preclude the presence or addition of one or more other features,
integers, steps, operations, elements, components, and/or groups
thereof. It is also noted that, as used herein, the terms
"substantially," "about," and other similar terms, are used as
terms of approximation and not as terms of degree, and, as such,
are utilized to account for inherent deviations in measured,
calculated, and/or provided values that would be recognized by one
of ordinary skill in the art.
[0038] Various embodiments are described herein with reference to
sectional and/or exploded illustrations that are schematic
illustrations of idealized embodiments and/or intermediate
structures. As such, variations from the shapes of the
illustrations as a result, for example, of manufacturing techniques
and/or tolerances, are to be expected. Thus, embodiments disclosed
herein should not necessarily be construed as limited to the
particular illustrated shapes of regions, but are to include
deviations in shapes that result from, for instance, manufacturing.
In this manner, regions illustrated in the drawings may be
schematic in nature and the shapes of these regions may not reflect
actual shapes of regions of a device and, as such, are not
necessarily intended to be limiting.
[0039] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this
disclosure is a part. Terms, such as those defined in commonly used
dictionaries, should be interpreted as having a meaning that is
consistent with their meaning in the context of the relevant art
and should not be interpreted in an idealized or overly formal
sense, unless expressly so defined herein.
[0040] FIG. 1 is a schematic cross-sectional view of a color
conversion panel according to the present embodiment.
[0041] Referring to FIG. 1, a color conversion panel according to
the present embodiment includes a blue color filter 230B disposed
on a first substrate 210. A dummy color filter 231B may be disposed
in the same layer as the blue color filter 230B. The dummy color
filter 231B may be disposed apart from the blue color filter
230B.
[0042] A red color filter 230R may be disposed between the dummy
color filters 231B. A green color filter 230G may be disposed
between the red color filter 230R and the blue color filter
230B.
[0043] A low refractive layer 350 and a low refractive capping
layer 351 may be disposed on the color filters 230R, 230G, and 230B
and the dummy color filter 231B. The low refractive layer 350 may
include a material with a low refractive index, and the low
refractive capping layer 351 may be disposed on the low refractive
layer 350.
[0044] Light blocking members 320 are disposed on the low
refractive capping layer 351. The light blocking members 320 may be
disposed to form openings that overlap the respective color filters
230R, 230G, and 230B in a direction that is perpendicular to a
plane of the first substrate 210.
[0045] The red color conversion layer 330R, the green color
conversion layer 330G, and the transmissive layer 330B are disposed
between the light blocking members 320. That is, as shown in FIG.
1, the red color conversion layer 330R, the green color conversion
layer 330G, and the transmissive layer 330B may be respectively
disposed in spaces partitioned by the light blocking members 320.
The capping layer 400 may be disposed on the red color conversion
layer 330R, the green color conversion layer 330G, and the
transmissive layer 330B.
[0046] The capping layer 400 may include SiON. More specifically,
the capping layer 400 may have a multi-layered structure including
SiON having different compositions. A detailed configuration of the
capping layer 400 will be described later.
[0047] The light blocking member 320 may include a black material.
The red color conversion layer 330R may be disposed while
overlapping the red color filter 230R in a direction that is
perpendicular to a plane of the first substrate 210, and the green
color conversion layer 330G may be disposed while overlapping the
red color filter 230G in the direction that is perpendicular to the
plane of the first substrate 210. The transmissive layer 330B is
located while overlapping the blue color filter 230B in the
direction that is perpendicular to the plane of the first substrate
210.
[0048] The red color conversion layer 330R may convert supplied
blue light to red light. For this, the red color conversion layer
330R may include first quantum dots. The first quantum dots may
convert incident blue light to red light. Specifically, a maximum
light emission peak wavelength of light emitted by the first
quantum dots may be about 600 nm or more, for example, 610 nm or
more, 615 nm or more, or 620 nm or more and 650 nm or less, 645 nm
or less, 640 nm or less, 635 nm or less, or 630 nm or less.
[0049] A diameter of the first quantum dot may be about 5 nm to 6
nm. However, this is just an example, and the inventive concepts
are not limited thereto. The content of the first quantum dots in
the red color conversion layer 330R layer may be 30 wt % to 50 wt
%. The red color conversion layer 330R may further include a
scatterer, and the scatterer may be TiO2. The content of TiO2 in
the red color conversion layer 330R may be 4 wt % to 5 wt %.
[0050] The green color conversion layer 330G may convert the
supplied blue light into green light. The green color conversion
layer 330G may include second quantum dots. The is second quantum
dots may convert incident blue light into green light.
Specifically, the maximum light emitting peak wavelength of light
emitted by the second quantum dots is 480 nm or more, for example,
500 nm or more, 510 nm or more, 520 nm or more, or 530 nm or more
and 560 nm or less, 550 nm or less, 545 nm or less, 540 nm or less,
or 535 nm or less.
[0051] A diameter of the second quantum dot may be 3 nm to 4 nm.
However, this is only an example and the inventive concepts are not
limited thereto. The content of the second quantum dots in the
green color conversion layer 330G may be 30 wt % to 50 wt %. The
green color conversion layer 330G may include a scatterer, and the
scatterer may be TiO2. The content of TiO2 in the green color
conversion layer 330G may be 4 wt % to 5 wt %.
[0052] The transmissive layer 330B transmits the incident blue
light. The transmissive layer may contain a transparent polymer,
and the supplied blue light transmits and expresses blue. The
transmissive layer 330B may include a scatterer, and the scatterer
may be TiO2. The content of TiO2 in the transmissive layer 330B may
be 5 wt % to 6 wt %.
[0053] Each of the first quantum dots and second quantum dots of
the inventive concepts may have the features described below.
[0054] In the inventive concepts, quantum dots (hereinafter, also
referred to as semiconductor nanocrystals) may include Group II-VI
compounds, Group III-V compounds, Group IV-VI compounds, Group IV
elements or compounds, Group I-III-VI compounds, II-III-VI VI
compounds, group I-II-IV-VI compounds, or a combination
thereof.
[0055] The Group II-VI compound may be selected from a group
consisting of a binary compound selected from a group consisting of
CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a
mixture thereof; a three-element compound consisting of AgInS,
CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe,
HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe,
HgZnTe, MgZnSe, MgZnS, and a mixture thereof; and a four-element
compound consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe,
CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and a
mixture thereof. The Group II-VI compound may further include a
Group III metal.
[0056] The Group III-V compound may be selected from a group
consisting of a binary compound consisting of GaN, GaP, GaAs, GaSb,
AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and a mixture thereof;
a three-element compound consisting of GaNP, GaNAs, GaNSb, GaPAs,
GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb,
InPAs, InZnP, InPSb, and a mixture thereof; and a four-element
compound consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb,
GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs,
InAlNSb, InAlPAs, InAlPSb, InZnP, and a mixture thereof. The Group
III-V compound may further include a Group II metal (e.g.,
InZnP).
[0057] The Group IV-VI compound may be selected from a group
consisting of a binary element compound consisting of SnS, SnSe,
SnTe, PbS, PbSe, PbTe, and a mixture thereof; a three-element
compound consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe,
SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and a four-element
compound consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and a mixture
thereof.
[0058] The group IV element or compound may be selected from a
single element compound selected from a group consisting of Si, Ge,
and a binary compound selected from a group consisting of SiC,
SiGe, and a combination thereof, but is not limited thereto.
[0059] Examples of the Group compound include CuInSe2, CuInS2,
CuInGaSe, and CuInGaS, but are not limited thereto. Examples of the
I-II-IV-VI group compound include CuZnSnSe, and CuZnSnS, but are
not thereto. The group IV element or compound may be selected from
a group consisting of a single element selected from a group
consisting of Si, Ge, and mixture thereof; and a binary element
compound selected from a group consisting of SiC, SiGe, and a
mixture thereof.
[0060] The Group compound may be selected from a group consisting
of ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe,
ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe,
HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe,
MgAlSe, MgInSe, and a combination thereof, but not limited
thereto.
[0061] The Group I-II-IV-VI compound may be selected from CuZnSnSe
and CuZnSnS, but is not limited thereto.
[0062] In one implementation, the quantum dot may not include
cadmium. The quantum dot may include a semiconductor nanocrystal
based on the Group III-V compounds including indium and phosphorus.
The Group III-V compound may further contain zinc. The quantum dot
may include a semiconductor nanocrystal based on a Group II-VI
compound including a chalcogen element (e.g., sulfur, selenium,
tellurium, or a combination thereof) and zinc.
[0063] In the quantum dot, the two-element compound, the
three-element compound, and/or the four-element compound described
above may exist in a particle with a uniform concentration, or may
exist in the same particle as the concentration distribution is
partially divided into different states. In addition, one quantum
dot may have a core/shell structure surrounding another quantum
dot. The interface between the core and the shell may have a
concentration gradient that decreases toward the center of the
concentration of elements present in the shell.
[0064] In some embodiments, the quantum dot may have a core-shell
structure that includes a core including the aforementioned
nanocrystal and a shell surrounding the core. The shell of the
quantum dot may serve as a protective layer to maintain
semiconductor characteristics by preventing chemical degeneration
of the core and/or as a charging layer to impart electrophoretic
characteristics to the quantum dot. The shell may be single-layered
or multi-layered. The interface between the core and the shell may
have a concentration gradient that decreases toward the center of
the concentration of elements present in the shell. Examples of the
quantum dot shell include a metal or a non-metal oxide, a
semiconductor compound, or a combination thereof.
[0065] For example, the metal or the non-metal oxide may be a
binary element compound, such as SiO2, Al2O3, TiO2, ZnO, MnO,
Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, and the
like, or a three-element compound such as MgAl2O4, CoFe2O4,
NiFe2O4, CoMn2O4, and the like, but the present invention is not
limited thereto.
[0066] In addition, the semiconductor compound may be, for example,
CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb,
HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the
like, but the present invention is not limited thereto.
[0067] The interface between the core and the shell may have a
concentration gradient that decreases toward the center of the
concentration of elements present in the shell. In addition, the
semiconductor nanocrystal may have a structure including one
semiconductor nanocrystal core and a multi-layered shell
surrounding the semiconductor nanocrystal core. In one embodiment,
the multi-layered shell may have two or more layers, for example,
two, three, four, five, or more layers. The two adjacent layers of
the shell may have a single composition or different compositions.
In a multi-layered shell, each layer may have a composition that
varies along the radius.
[0068] Quantum dots may have a full width at half maximum (FWHM) of
a light emitting wavelength spectrum of about 45 nm or less,
preferably about 40 nm or less, and more preferably about 30 nm or
less, and color purity or color reproducibility in this range can
be improved. In addition, since the light emitted through the
quantum dot is emitted in all directions, the optical viewing angle
can be improved.
[0069] In the quantum dot, a shell material and a core material may
have different energy bandgaps. For example, the energy bandgap of
the shell material may be larger than that of the core material. In
other embodiments, the energy bandgap of the shell material may be
smaller than that of the core material. The quantum dot may have a
multi-layered shell. In a multi-layered shell, the energy bandgap
of the outer layer may be larger than that of the inner layer
(i.e., a layer closer to the core). In a multi-layered shell, the
energy bandgap of the outer layer may be smaller than that of the
inner layer.
[0070] Quantum dots may control absorption/light emitting
wavelength by adjusting composition and size thereof. The maximum
light emitting peak wavelength of a quantum dot may have a
wavelength range from an ultraviolet (UV) to infrared wavelength or
higher.
[0071] A quantum dot may have quantum efficiency of about 10% or
more, for example, about 30% or more, about 50% or more, about 60%
or more, about 70% or more, about 90% or more, or even 100%. The
quantum dot may have a relatively narrow spectrum. The quantum dot
may have a half width of a light emitting wavelength spectrum of,
for example, about 50 nm or less, for example, about 45 nm or less,
about 40 nm or less, or about 30 nm or less.
[0072] The quantum dot may have a particle size of about 1 nm or
more and about 100 nm or less. The particle size refers to a
diameter of the particle or a diameter converted by assuming a
sphere from a 2D image obtained by analysis by a transmission
electron microscope. The quantum dot may have a size of about 1 nm
to about 20 nm, for example, 2 nm or more, 3 nm or more, or 4 nm or
more and 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or
less, 15 nm or less, or, 10 nm or less. The shape of the quantum
dot is not particularly limited. For example, the shape of the
quantum dot may include a sphere, a polyhedron, a pyramid, a
multipod, a square, a rectangular parallelepiped, a nanotube, a
nanorod, a nanowire, a nanosheet, or a combination thereof, but is
not limited thereto.
[0073] Quantum dots are commercially available or can be
synthesized appropriately. Particle size of the quantum dot can be
controlled relatively freely and uniformly during colloid
synthesis.
[0074] The quantum dot may contain an organic ligand (e.g., having
a hydrophobic moiety and/or a hydrophilic moiety). The organic
ligand moiety may be bound to the surface of the quantum dot. The
organic ligands include RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P,
ROH, RCOOR, RPO (OH)2, RHPOOH, R2POOH, or a combination thereof,
where each R may independently be a C3 to C40 (e.g., C5 or more and
C24 or less) substituted or unsubstituted alkyl, substituted or
unsubstituted alkenyl, and the like, a C3 to C40 substituted or
unsubstituted aliphatic hydrocarbon group, a substituted or
unsubstituted C6 to C40 aryl group, and the like, a C6 to C40
substituted or unsubstituted aromatic hydrocarbon group (e.g. C6 or
more and C20 or less), or a combination thereof.
[0075] The organic ligand may for example include: thiol compounds,
such as methane thiol, ethane thiol, propane thiol, butane thiol,
pentane thiol, hexane thiol, octane thiol, dodecane thiol,
hexadecane thiol, octadecane thiol, and benzyl thiol; amines, such
as methane amine, ethane amine, propane amine, butane amine, pentyl
amine, hexyl amine, octyl amine, nonyl amine, decyl amine, dodecyl
amine, hexadecyl amine, octadecyl amine, dimethyl amine, diethyl
amine, dipropyl amine, tributylamine, and trioctylamine; carboxylic
acid compounds, such as methanic acid, ethanic acid, propane acid,
butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid,
octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic
acid, oleic acid, and benzoic acid; phosphine compounds, such as
methyl phosphine, ethyl phosphine, propyl phosphine, butyl
phosphine, pentyl phosphine, octyl phosphine, dioctyl phosphine,
tributyl phosphine, trioctyl phosphine, and the like; phosphines,
such as methyl phosphine oxide, ethyl phosphine oxide, propyl
phosphine oxide, butyl phosphine oxide, pentyl phosphine oxide,
tributyl phosphine oxide, octyl phosphine oxide, dioctyl phosphine
oxide, trioctyl phosphine oxide, and a compound or oxide compound
thereof; a diphenyl phosphate spin, a triphenyl phosphate spin
compound or its oxide compound; a C5 to C20 alkyl phosphinic acid
or a C5 to C20 alkyl phosphonic acid, such as hexylphosphinic acid,
octylphosphinic acid, dodecanephosphinic acid, tetradecanfosphinic
acid, hexadecanphosphinic acid, octadecanphosphinic acid; and the
like, but are not limited thereto. Quantum dots may contain
hydrophobic organic ligands alone or as a mixture of more than one.
The hydrophobic organic ligand (e.g., acrylate group, methacrylate
group, and the like) may not contain a photopolymerizable
moiety.
[0076] Hereinafter, the capping layer 400 of the color conversion
panel according to the embodiment of the present invention will be
described with reference to FIG. 2. FIG. 2 illustrates in further
detail a portion of the color conversion layer 330 and the capping
layer 400 illustrated in FIG. 1.
[0077] Referring to FIG. 2, the capping layer 400 of the color
conversion panel according to the present embodiment includes a
first layer 410 and a second layer 420.
[0078] The first layer 410 is disposed between the second layer 420
and the color conversion layer 330, and may directly contact the
color conversion layer 330. The second layer 420 may not directly
contact the color conversion layer 330, and is located in the
outermost side of the color conversion panel 300.
[0079] The first layer 410 may include N-rich SiON. Specifically,
the first layer may include SiON having an O/Si molar ratio of 1.0
to 1.2.
[0080] The second layer may contain O-rich SiON. Specifically, the
first layer may include SiON having an O/Si molar ratio of 1.7 to
1.9.
[0081] That is, the first layer in direct contact with the color
conversion layer 330 may contain N-rich SiON, and the second layer
not in direct contact with the color conversion layer 330 may
contain O-rich SiON. When the capping layer 400 includes SiON
having different O/Si compositions, the efficiency of the color
conversion panel may be increased.
[0082] In this case, the thickness of the first layer 410 including
N-rich SiON may be 200 .ANG. or less. When the thickness of the
first layer 410 is 200 .ANG. or more, the capping layer 400 may be
separated due to film oxidation of the first layer 410, which is
not preferable.
[0083] The thickness of the second layer 420 containing O-rich SiON
may be greater than the first layer 410. For example, the thickness
of the second layer 420 may be 2000 .ANG. or more.
[0084] The thickness of the first layer 410 may be 5% to 20% of the
thickness of the second layer 420. Although it will be described
separately later, the first layer including N-rich SiON contributes
to the efficiency improvement of the color conversion panel.
However, if the thickness is greater than a certain thickness, the
capping layer 400 may be separated due to oxidation of the film.
That is, when the first layer 410 is less than 5% of the thickness
of the second layer 420, the efficiency improvement effect of the
color conversion panel of the capping layer 400 may be
insignificant, and when the first layer 410 is more than 20% of the
thickness of the second layer 420, the capping layer 400 may be
separated due to the film oxidation of the first substrate 410.
[0085] Hereinafter, the effect of the present invention will be
described.
[0086] Table 1 shows the efficiency and relative efficiency of each
color conversion panel when SiON having various compositions is
applied as a single layer.
[0087] SiON having different compositions were prepared, and the
compositions of SiON used in each of Experimental Examples 1 to 3
are as follows.
TABLE-US-00001 TABLE 1 Type N1s O1s Si2p O/Si Experimental O-rich
0.25 65.00 34.75 1.87 Example 1 Experimental O-rich 0.47 64.76
34.77 1.86 Example 2 Experimental N-rich 17.40 44.60 38.00 1.17
Example 3
[0088] The efficiency was measured by applying SiON of Experimental
Examples 1 to 3 having the composition as a single capping layer,
and it is shown in Table 2.
TABLE-US-00002 TABLE 2 Efficiency relative Efficiency (cd %)
comparison R G B R G B Capping layer 1.49% 4.86% 1.20% 100% 100%
100% X (Ref) Experimental 1.51% 4.90% 1.22% 101% 101% 102% Example
1 Experimental 1.48 % 4.71% 1.20% 99% 97% 100% Example 2
Experimental 1.44% 5.23% 1.21% 98% 108% 101% Example 3
[0089] Referring to Table 1 and Table 2, it was determined that the
efficiency was the best when SiON of Experimental Example 3, of
which an O/Si ratio was 1.17, was applied as the capping layer.
[0090] However, when SiON having the composition of Experimental
Example 3 is applied as a capping layer, there is a problem in that
stains occur on the entire surface of the display panel.
[0091] Table 3 below shows the efficiency measured by applying SiON
of Experimental Examples 1 to 3 having the composition of the Table
1 as a single capping layer, and simultaneously shows the stain.
The relative efficiency is shown by setting the efficiency in
Experimental Example 1 as 100%.
TABLE-US-00003 TABLE 3 Efficiency relative comparison Stain/ R G B
Stain Efficiency Experimental 100% 100% 100% good Ref Example 1
(Ref) Experimental 100% 100% 99% good -- Example 2 Experimental
105% 103% 99% occurs in stain defect Example 3 the entire in the
entire surface surface
[0092] Referring to Table 3, it is preferable to apply SiON having
the composition of Experimental Example 3 for maximum efficiency,
but there was a problem in that stains were generated on the entire
surface when SiON having the composition of Experimental Example 3
was applied alone, which was not preferable.
[0093] However, the color conversion panel according to the
inventive concepts improved the occurrence of surface stains while
securing maximum efficiency by forming SiON of different
compositions into a multi-layer structure.
[0094] Specifically, SiON having the composition of Experimental
Example 2 and SiON having the composition of Experimental Example 3
can be applied as a multi-layer structure. In this case, N-rich
SiON (Experimental Example 3) is formed on the surface in contact
with the color conversion layer, and O-rich SiON (Experimental
Example 2) is formed on the surface not in contact with the color
conversion layer. When the capping layer 400 is formed of a
multi-layer structure of N-rich SiON and O-rich SiON, generation of
stains can be prevented while efficiency is maximized.
[0095] Typically, hydrogen plasma treatment is used to improve the
efficiency of the capping layer 400. However, according to the
present embodiment, the capping layer 400 formed of a multi-layer
structure of N-rich SiON and O-rich SiON can obtain high efficiency
and improve the stain problem without hydrogen plasma
treatment.
[0096] Table 4 below shows efficiency measurements and results for
a case where the capping layer is a single layer and plasma is
treated, and embodiments where the capping layer is formed in a
multi-layer structure of N-rich SiON and O-rich SiON, and does not
undergo plasma treatment.
[0097] In Table 4, plasma treatment conditions and times are shown.
In embodiment 7, the thickness of each layer is described.
TABLE-US-00004 TABLE 4 Efficiency relative comparison R G B Stain
Stain /efficiency Embodiment 1 2Kw H.sub.2 102% 104% 99% good
efficiency increase PT 5'' + SiON 0.4 R.tangle-solidup.2%,
G.tangle-solidup.4% Embodiment 2 4Kw H.sub.2 102% 105% 100% good
efficiency increase PT 5'' + SiON 0.4 R.tangle-solidup.2%,
G.tangle-solidup.5% Embodiment 3 4Kw H.sub.2 101% 102% 100% good
efficiency increase PT 10'' + SiON 0.4 R.tangle-solidup.1%,
G.tangle-solidup.2% Embodiment 4 2Kw H.sub.2 101% 102% 99% good
efficiency increase PT 5'' + SiON 0.5 R.tangle-solidup.1%,
G.tangle-solidup.2% Embodiment 5 4Kw H.sub.2 103% 103% 100% good
efficiency increase PT 5'' + SiON 0.5 R.tangle-solidup.3%,
G.tangle-solidup.3% Embodiment 6 4Kw H.sub.2 98% 102% 99% good
efficiency increase PT 10'' + SiON 0.5 G.tangle-solidup.2%
Embodiment 7 SiON 0.6 107% 108% 100% good efficiency increase 100
.ANG. + SiON 0.5 (3900 .ANG.) R.tangle-solidup.7%,
G.tangle-solidup.8%
[0098] Referring to Table 4, it can be determined that efficiency
improvement of Embodiment 7 in which the capping layer is
multi-layered without plasma treatment is greater than in
Embodiments 1 to 6 in which plasma treatment is performed.
[0099] Hereinafter, a display device including the color conversion
panel 300 according to the present embodiment will be described
with reference to FIG. 3. FIG. 3 illustrates a display device
according to an embodiment.
[0100] FIG. 3 includes a display panel 100 and a color conversion
panel 300. The display panel 100 includes a second substrate 110, a
plurality of transistors TFT, and an insulating layer 180 disposed
on the second substrate 110. A first electrode 191 and a
partitioning wall 360 are disposed in the insulating layer 180, and
the first electrode 191 is disposed in an opening of the
partitioning wall 360 and is connected to the transistor TFT.
Although not specifically illustrated, the transistor TFT may
include a semiconductor layer, a source electrode, and a drain
electrode connected to the semiconductor layer, and a gate
electrode insulated from the semiconductor layer. A second
electrode 270 is disposed on the partitioning wall 360, and a light
emitting element layer 370 is disposed between the first electrode
191 and the second electrode 270. The first electrode 191, the
second electrode 270, and the light emitting element layer 370 are
collectively referred to as an emitting diode ED.
[0101] The color conversion panel 300 is the same as the color
conversion panel of FIG. 1. A detailed description of the same
constituent elements will be omitted. That is, a blue color filter
230B, a dummy color filter 231B, a red color filter 230R, and a
green color filter 230G are disposed on the first substrate
210.
[0102] A low refractive layer 350 may be disposed on the color
filters 230R, 230G, and 230B and the dummy color filter 231B. A low
refractive capping layer 351 is disposed on the low refractive
layer 350, and the red color conversion layer 330R, the green color
conversion layer 330G, and the transmissive layer 330B may be
disposed on the low refractive capping layer 351. The light
blocking member 320 is disposed between the red color conversion
layer 330R, the green color conversion layer 330G, and the
transmissive layer 330B.
[0103] The light blocking member 320 of the color conversion panel
300 may overlap the partitioning wall 360 of the display panel 100
in a direction that is perpendicular to a plane of the first
substrate 210. In addition, the red color conversion layer 330R,
the green color conversion layer 330G, and the transmissive layer
330B may respectively overlap the emitting diode ED in the
direction that is perpendicular to the plane of the first substrate
210.
[0104] As previously described, a capping layer 400 may be disposed
on the red color conversion layer 330R, the green color conversion
layer 330G, and the transmissive layer 330B.
[0105] The capping layer 400 may include SiON. More specifically,
the capping layer 400 may have a multi-layer structure including
SiON having different compositions.
[0106] Specifically, the capping layer 400 includes a first layer
410 and a second layer 420, and the first layer 410 may include
N-rich SiON. Specifically, the first layer may include SiON having
an O/Si ratio of 1.0 to 1.2. The second layer may contain O-rich
SiON. Specifically, the second layer may include SiON having an
O/Si ratio of 1.7 to 1.9.
[0107] The first layer 410 is disposed between the second layer 420
and the color conversion layer 330, and may directly contact the
color conversion layer 330. The second layer 420 does not directly
contact the color conversion layer 300, and is a region disposed on
the outermost side of the color conversion panel 300.
[0108] As described, since the capping layer 400 is a multi-layer
structure containing SiON having different compositions, it is
possible to solve the problem of staining while maximizing the
efficiency of the color conversion panel.
[0109] Although certain embodiments and implementations have been
described herein, other embodiments and modifications will be
apparent from this description. Accordingly, the inventive concepts
are not limited to such embodiments, but rather to the broader
scope of the appended claims and various obvious modifications and
equivalent arrangements as would be apparent to a person of
ordinary skill in the art.
TABLE-US-00005 <Description of symbols> 100: display panel
300: color conversion panel 110: second substrate 210: first
substrate 320: light blocking member 330B: transmissive layer 330R:
red color conversion layer 330G: green color conversion layer 360:
partitioning wall 350: low refractive layer 400: capping layer
* * * * *