U.S. patent application number 17/144461 was filed with the patent office on 2022-07-14 for integrated assemblies having memory cells with capacitive units and reference-voltage-generators with resistive units.
This patent application is currently assigned to Micron Technology, Inc.. The applicant listed for this patent is Micron Technology, Inc.. Invention is credited to Yuan He, Hyunui Lee, Yasuo Satoh, Takamasa Suzuki.
Application Number | 20220223191 17/144461 |
Document ID | / |
Family ID | |
Filed Date | 2022-07-14 |
United States Patent
Application |
20220223191 |
Kind Code |
A1 |
Lee; Hyunui ; et
al. |
July 14, 2022 |
INTEGRATED ASSEMBLIES HAVING MEMORY CELLS WITH CAPACITIVE UNITS AND
REFERENCE-VOLTAGE-GENERATORS WITH RESISTIVE UNITS
Abstract
Embodiments include an integrated assembly having a deck over a
base, and having memory cells supported by the deck. Each of the
memory cells includes a capacitive unit and a transistor. The
individual capacitive units of the memory cells each have a storage
node electrode, a plate electrode, and a capacitor dielectric
material between the storage node electrode and the plate
electrode. A reference-voltage-generator includes resistive units
supported by the deck. The resistive units are similar to the
memory cells but include interconnecting units in place of the
capacitive units. The interconnecting units of some adjacent
resistive units are shorted to one another.
Inventors: |
Lee; Hyunui; (Sagamihara,
JP) ; Suzuki; Takamasa; (Tokyo, JP) ; Satoh;
Yasuo; (Tsukuba, JP) ; He; Yuan; (Boise,
ID) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Micron Technology, Inc. |
Boise |
ID |
US |
|
|
Assignee: |
Micron Technology, Inc.
Boise
ID
|
Appl. No.: |
17/144461 |
Filed: |
January 8, 2021 |
International
Class: |
G11C 11/4074 20060101
G11C011/4074 |
Claims
1. An integrated assembly, comprising: a deck over a base; memory
cells supported by the deck; each of the memory cells including a
capacitive unit and a transistor comprising a transistor structure
having a vertically extending semiconductor material pillar
comprising a channel region between an upper source/drain region
and a lower source drain region; the individual capacitive units of
the memory cells each comprising a storage node electrode
comprising a conductive structure electrically coupled to the upper
source/drain region of the transistor structure, a plate electrode,
and a capacitor dielectric material between the storage node
electrode and the plate electrode; and a
reference-voltage-generator which includes resistive units
supported by the deck; the resistive units each comprising the
transistor structure and comprising interconnection units, the
interconnection units comprising the conductive structure
electrically coupled to the source/drain region of the transistor
structure, at least two adjacent resistive units being shorted to
one another through a conductive connection fusing the conductive
structure of the at least two adjacent resistive units.
2. The integrated assembly of claim 1 wherein the resistive units
are arranged in series relative to one another.
3. The integrated assembly of claim 1 wherein at least some of the
resistive units are arranged in parallel relative to one
another.
4. The integrated assembly of claim 1 wherein the interconnection
units further comprise the capacitor dielectric material.
5. The integrated assembly of claim 1 wherein the interconnection
units are conductive blocks.
6. The integrated assembly of claim 1 wherein: resistive components
comprise resistive units directly interconnected to one another
through the interconnecting units; there being at least two of the
resistive components with one of the resistive components being a
first resistive component and another of the resistive components
being a second resistive component; a first conductive interconnect
couples the first resistive component in series to the second
resistive component; the resistive components are provided between
a VDD supply terminal and a VSS supply terminal, with the first
resistive component being closer to the VDD supply terminal than
the second resistive component; a second conductive interconnect is
between the VDD supply terminal and the first resistive component,
and a third conductive interconnect is between the second resistive
component and the VSS supply terminal; two or more switches are
associated with the base; a first of the switches being coupled to
the first conductive interconnect and a second of the switches
being coupled to the third conductive interconnect; and an output
circuit is associated with the base; the output including an
electrical feed coupled to a gain buffer, and including a reference
voltage output from the gain buffer; a first feed interconnect
extending from the first switch to the electrical feed, and a
second feed interconnect extending from the second switch to the
electrical feed.
7. The integrated assembly of claim 1 wherein: the resistive units
are arranged in parallel relative to one another and are within a
first resistive grouping; the resistive grouping is one of two or
more resistive groupings within the reference-voltage-generator;
one of the resistive groupings being a first resistive grouping and
another of the resistive groupings being a second resistive
grouping; a first conductive interconnect couples the first
resistive grouping in series to the second resistive grouping; the
resistive groupings are provided between a VDD supply terminal and
a VSS supply terminal, with the first resistive grouping being
closer to the VDD supply terminal than the second resistive
grouping; a second conductive interconnect is between the VDD
supply terminal and the first resistive grouping, and a third
conductive interconnect is between the second resistive grouping
and the VSS supply terminal; two or more switches are associated
with the base; a first of the switches being coupled to the first
conductive interconnect and a second of the switches being coupled
to the third conductive interconnect; and an output circuit is
associated with the base; the output including an electrical feed
coupled to a gain buffer, and including a reference voltage output
from the gain buffer; a first feed interconnect extending from the
first switch to the electrical feed, and a second feed interconnect
extending from the second switch to the electrical feed.
8. The integrated assembly of claim 1 wherein: the transistors of
the memory cells being first transistors and the transistors of the
resistive units being second transistors; the resistive units are
arranged in parallel relative to one another and are within a first
resistive grouping; the resistive grouping is one of two or more
resistive groupings within the reference-voltage-generator; one of
the resistive groupings being a first resistive grouping and
another of the resistive groupings being a second resistive
grouping; a conductive interconnect couples the first resistive
grouping in series to the second resistive grouping; the resistive
groupings are provided between a VDD supply terminal and a VSS
supply terminal, with the first resistive grouping being closer to
the VDD supply terminal than the second resistive grouping; the
second transistors are configured to operate as first switches to
control operation of individual resistive units within the
resistive groupings; an output circuit is associated with the base;
the output including an electrical feed coupled to a gain buffer,
and including a reference voltage output from the gain buffer; and
a feed interconnect extends from the electrical feed to the
conductive interconnect.
9. The integrated assembly of claim 1 wherein the transistors of
the resistive units are configured to be always in an ON mode.
10. The integrated assembly of claim 9 wherein the transistors of
the resistive units include heavily-doped channel material.
11. The integrated assembly of claim 9 wherein the transistors of
the resistive units include depletion-doped channel material; and
wherein gating regions of the transistors of the resistive units
are electrically grounded.
12-31. (canceled)
32. An integrated assembly, comprising: a deck over a base; memory
cells supported by the deck; each of the memory cells including a
capacitive unit and a transistor comprising a transistor structure
comprising a semiconductor pillar containing a channel region
extending horizontally between opposing source/drain regions; the
individual capacitive units of the memory cells each comprising a
storage node electrode comprising a conductive structure
electrically coupled to a source/drain region of the transistor
structure, a plate electrode, and a capacitor dielectric material
between the storage node electrode and the plate electrode; and a
reference-voltage-generator which includes resistive units
supported by the deck; the resistive units each comprising the
transistor structure and comprising interconnection units, the
interconnection units comprising the conductive structure
electrically coupled to the source/drain region of the transistor
structure, at least two adjacent resistive units being shorted to
one another through a conductive connection fusing the conductive
structure of the at least two adjacent resistive units.
33. The integrated assembly of claim 32 wherein the resistive units
are arranged in series relative to one another.
34. The integrated assembly of claim 32 wherein at least some of
the resistive units are arranged in parallel relative to one
another.
Description
TECHNICAL FIELD
[0001] Integrated assemblies. Reference-voltage-generators.
Multi-deck assemblies.
BACKGROUND
[0002] Integrated circuits may utilize reference voltages for
numerous applications. For example, reference voltages may be
coupled with capacitor plates, shield lines, data sense amplifiers,
etc.
[0003] It may be desired to generate a reference voltage (VREF) in
a suitable manner so that the reference voltage is accurate and
controllable. An example reference-voltage-generator 1000 is
described with reference to FIG. 1.
[0004] The reference-voltage-generator 1000 includes a number of
resistive components 1002 arranged in series between a VDD supply
terminal 1004 and a VSS supply terminal 1006. The resistive
components are coupled through switches 1008 to a feed line 1010
associated with a gain buffer 1012. The VREF is output from the
gain buffer.
[0005] The switches 1008 may be utilized to control how many of the
resistive components 1002 are electrically coupled to the feed line
1012, and thus to control the VREF output from the gain buffer
1012.
[0006] A continuing goal during the fabrication of integrated
assemblies is to increase packing density and to thereby conserve
valuable semiconductor real estate. It is desired to develop
improved reference-voltage-generators (also referred to as
reference-voltage-generation-circuitry) which may be packed into a
tighter footprint relative to conventional
reference-voltage-generators.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is a schematic diagram of a prior art
reference-voltage-generator.
[0008] FIG. 2 is a diagrammatic side view of an example multi-deck
assembly.
[0009] FIG. 3A is a diagrammatic side view of an example
arrangement of memory cells within a multi-deck assembly.
[0010] FIG. 3B is a diagrammatic side view of an example
reference-voltage-generator.
[0011] FIG. 3B-1 is a diagrammatic schematic view representing the
example reference-voltage-generator of FIG. 3B.
[0012] FIG. 3C is a diagrammatic side view of an example
reference-voltage-generator.
[0013] FIG. 3C-1 is a diagrammatic schematic view representing the
example reference-voltage-generator of FIG. 3C.
[0014] FIG. 3D is a diagrammatic side view of an example
reference-voltage-generator.
[0015] FIG. 4A is a diagrammatic side view of an example
arrangement of memory cells within a multi-deck assembly.
[0016] FIG. 4B is a diagrammatic side view of an example
reference-voltage-generator.
[0017] FIG. 4B-1 is a diagrammatic schematic view representing the
example reference-voltage-generator of FIG. 4B.
[0018] FIG. 4C is a diagrammatic side view of an example
reference-voltage-generator.
[0019] FIG. 4C-1 is a diagrammatic schematic view representing the
example reference-voltage-generator of FIG. 4C.
DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
[0020] Some embodiments include reference-voltage-generators
configured to be incorporated into multi-deck integrated assemblies
in arrangements which conserve valuable semiconductor real estate
along base levels of the assemblies. Example embodiments are
described with reference to FIGS. 2-4.
[0021] Referring to FIG. 2, an example multi-deck (multi-tier,
multi-level) assembly 200 is illustrated. The assembly comprises a
vertically-stacked arrangement of tiers (levels, decks) 10a-e. The
vertically-stacked arrangement may include any suitable number of
the tiers, and may include fewer than the shown number of tiers or
more than the shown number of tiers. Generally, the multi-tier
arrangement will include at least two of the tiers.
[0022] The tiers 10a-e may be within different semiconductor dies,
or at least two of the tiers may be within the same semiconductor
die.
[0023] The bottom tier (10a) may include control circuitry and/or
sensing circuitry (e.g., may include wordline drivers, sense
amplifiers, etc.), and in some applications may comprise CMOS
circuitry. The upper tiers (tiers 10b-e) may include memory arrays.
The memory arrays within the various tiers may be the same as one
another (e.g., may all be DRAM arrays), or may be different
relative to one another (e.g., some may be DRAM arrays, while
others are NAND arrays). Also, one or more of the upper tiers may
include control circuitry or other logic circuitry.
[0024] In some embodiments, the bottom tier 10a may correspond to a
semiconductor base 12. The base 12 may comprise semiconductor
material; and may, for example, comprise, consist essentially of,
or consist of monocrystalline silicon. The base 12 may be referred
to as a semiconductor substrate. The term "semiconductor substrate"
means any construction comprising semiconductive material,
including, but not limited to, bulk semiconductive materials such
as a semiconductive wafer (either alone or in assemblies comprising
other materials), and semiconductive material layers (either alone
or in assemblies comprising other materials). The term "substrate"
refers to any supporting structure, including, but not limited to,
the semiconductor substrates described above. In some applications,
the base 12 may correspond to a semiconductor substrate containing
one or more materials associated with integrated circuit
fabrication. Such materials may include, for example, one or more
of refractory metal materials, barrier materials, diffusion
materials, insulator materials, etc.
[0025] In some embodiments, the tier 10b is a memory tier (memory
deck) comprising a large number of memory cells (e.g., hundreds,
thousands, hundreds of thousands, millions, etc.). In some
embodiments, a reference-voltage-generator (not shown in FIG. 2)
may be configured to have an upper portion along the tier 10b and a
lower portion along the base 12 (the tier 10a). The portion along
the tier 10b may include resistive units (elements, components)
which are similar to the memory cells within the memory tier 10b,
and in some embodiments may be considered to be modified memory
cells. Example reference-voltage-generators are shown in FIGS. 3B,
3C, 3D, 4B and 4C.
[0026] Before describing an example reference-voltage-generator, it
is useful to describe an arrangement of memory cells within a
multi-deck assembly. FIG. 3A shows a region of the example
multi-deck assembly 200 of FIG. 2 comprising example memory cells,
with the shown region comprising the base 12 (tier 10a) and the
tier 10b over the base 12.
[0027] A digit line 16 extends along the tier (level) 10b, and is
electrically coupled with sense-amplifier-circuitry (SA) 18 within
the base 12 (i.e., the sense-amplifier-circuitry is associated with
the base 12, or is otherwise supported by the base 12).
[0028] The digit line 16 may comprise any suitable electrically
conductive composition(s); such as, for example, one or more of
various metals (e.g., titanium, tungsten, cobalt, nickel, platinum,
ruthenium, etc.), metal-containing compositions (e.g., metal
silicide, metal nitride, metal carbide, etc.), and/or
conductively-doped semiconductor materials (e.g.,
conductively-doped silicon, conductively-doped germanium,
etc.).
[0029] Memory cells 14 are over the digit line 16. Each of the
memory cells includes a transistor 30 coupled with a capacitor
32.
[0030] Each of the transistors 30 includes a vertically-extending
channel-material-pillar 20 (only one of which is labeled), and
gating structures (gating regions, transistor gates) 22 operatively
proximate to the channel-material-pillar, with only a couple of the
gating structures 22 being labeled in FIG. 3A.
[0031] The channel-material pillars 20 may comprise semiconductor
material. The semiconductor material of the pillars 20 may comprise
any suitable composition(s), and in some embodiments may comprise,
consist essentially of, or consist of one or more of silicon,
germanium, III/V semiconductor material (e.g., gallium phosphide),
semiconductor oxide, etc.; with the term III/V semiconductor
material referring to semiconductor materials comprising elements
selected from groups III and V of the periodic table (with groups
III and V being old nomenclature, and now being referred to as
groups 13 and 15 of the periodic table).
[0032] Each of the pillars 20 comprises a channel region 15 between
the gating regions 22, comprises an upper source/drain region 17
above the channel region, and comprises a lower source/drain region
19 beneath the channel region.
[0033] The upper and lower source/drain regions may be coupled to
one another through the channel regions during operation of the
transistors 30. Specifically, the gating regions 22 may be coupled
to wordlines WL1-WL4. The wordlines (specifically, transistor gates
along the wordlines) may be considered to be operatively adjacent
to (operatively proximate to) the channel regions such that a
sufficient voltage applied to an individual wordline will induce an
electric field which enables current flow through an associated
channel region to electrically couple the source/drain regions on
opposing sides of the associated channel region with one another.
If the voltage to the wordline is below a threshold level, the
current will not flow through the channel region, and the
source/drain regions on opposing sides of the channel region will
not be electrically coupled with one another. The selective control
of the coupling/decoupling of the source/drain regions through the
level of voltage applied to the wordline may be referred to as
gated coupling of the source/drain regions.
[0034] The gating regions 22 may be considered to be spaced from
the channel-material-pillars 20 by gate dielectric material 28. The
gate dielectric material may comprise any suitable composition(s),
such as, for example, one or more of silicon dioxide, aluminum
oxide, hafnium oxide, etc.
[0035] Although two of the gating regions 22 are shown to be
associated with each of the transistors 30, in other embodiments
the gating regions may be provided in other configurations. For
instance, there may be only one gating region within a transistor
and along one side of a channel-material pillar. As another
example, the gating regions may extend entirely around the
channel-material-pillars 20 in gate-all-around configurations.
[0036] In the illustrated embodiment, electrical flow along the
channel region of one of the transistors 30 enables a capacitor 32
above the channel region to be electrically coupled with the digit
line 16 below the channel region.
[0037] The capacitors (capacitive units) 32 each include a storage
electrode 23, a plate electrode 24 and an insulative material
(capacitor dielectric material) 26 between the electrodes 23 and
24.
[0038] The electrodes 23 and 24 may comprise any suitable
electrically conductive composition(s); such as, for example, one
or more of various metals (e.g., titanium, tungsten, cobalt,
nickel, platinum, ruthenium, etc.), metal-containing compositions
(e.g., metal silicide, metal nitride, metal carbide, etc.), and/or
conductively-doped semiconductor materials (e.g.,
conductively-doped silicon, conductively-doped germanium,
etc.).
[0039] The insulative material 26 may comprise any suitable
composition(s), and in some embodiments may comprise one or more of
silicon dioxide, aluminum oxide, silicon nitride, hafnium oxide,
etc.
[0040] Insulative material 25 extends around the gating regions 22.
The insulative material 25 may comprise any suitable
composition(s), and may, for example, comprise, consist essentially
of, or consist of silicon dioxide. The insulative material 25 may
be the same as the gate dielectric material 26 in some
applications, and may be different than the gate dielectric
material 26 in other applications.
[0041] The memory cells 14 may be incorporated into any suitable
memory, and in some embodiments may correspond to DRAM (dynamic
random-access memory) cells.
[0042] FIG. 3B shows an example embodiment of a
reference-voltage-generator 210, with such
reference-voltage-generator utilizing modified memory cells 14 from
the memory tier 10b of FIG. 3A.
[0043] The reference-voltage-generator 210 is formed within the
integrated assembly 200. The reference-voltage-generator 210
comprises an upper portion 32 along the tier 10b, and comprises a
lower portion 34 associated with the base 12 (tier 10a). The lower
portion 34 is under the tier 10b, and in some embodiments may be
considered to be supported by semiconductor material of the base
12, which may include embodiments in which the lower portion
comprises components which extend into semiconductor material of
the base 12.
[0044] The upper portion comprises resistive components 36 (labeled
as 36a and 36b). Each of the resistive components includes a pair
of resistive units 38a and 38b. The resistive units 38a and 38b
include vertically-extending pillars 40 analogous to the pillars 20
of the memory cells 14 (FIG. 3A).
[0045] The gating regions 22 are adjacent to the pillars 40. The
gating regions 22 of FIG. 3B may have the same configurations and
compositions as the gating regions 22 of the memory cells 14 (FIG.
3A).
[0046] The resistive units 38a and 38b are supported by conductive
segments 42 (labeled 42a, 42b and 42c). Such conductive segments
may comprise the same material as the digit line 16 of FIG. 3A, and
may correspond to chopped regions of such digit line material. The
conductive segments 42 may be supported by insulative materials of
the deck 10b. Such insulative materials are not shown in order to
simplify the drawing.
[0047] Interconnecting units 44 extend across the resistive units
38a and 38b and electrically couple such units to one another
(i.e., to short the adjacent resistive units 38a and 38b to one
another) to form the resistive components 36. In some embodiments,
the interconnecting units 44 may be considered to replace the
capacitive units 32 of the memory cells 14 (FIG. 3A). In some
embodiments, each of the resistive components 36 may be considered
to comprise a pair of adjacent (neighboring) resistive units 38a
and 38b which are directly interconnected to one another through an
interconnecting unit 44.
[0048] In some embodiments, the resistive units 38a and 38b may be
referred to as first and second resistive units, respectively,
within the components 36, and in the shown embodiment are formed in
electrical series with one another. Additionally, the illustrated
components 36a and 36b are formed in electrical series with one
another.
[0049] The resistive components 36 may be referred to as a first
resistive component 36a and a second resistive component 36b. The
resistive components 36a and 36b are provided between a VDD supply
terminal 212 and a VSS supply terminal 214, and may be considered
to be analogous to the components 1002 described above with
reference to FIG. 1.
[0050] A resistor-divider-circuit (resistance-supply-circuit,
voltage-divider-circuit) 216 may be considered to comprise the
resistive components 36, conductive segments 42 and interconnecting
units 44.
[0051] The conductive segments 42 may be considered to correspond
to conductive interconnects 42a, 42b and 42c. In some embodiments,
the interconnect 42b may be referred to as a first conductive
interconnect which couples the first resistive component 36a in
series to the second resistive component 36b. The interconnect 42a
may be referred to as a second conductive interconnect between the
VDD supply terminal 212 and the first resistive component 36a, and
the interconnect 42c may be referred to as a third conductive
interconnect between the second resistive component 36b and the VSS
supply terminal.
[0052] Although the illustrated embodiment comprises two of the
resistive components 36, in other embodiments there may be many
more of the resistive components provided within the
reference-voltage-generator 210. Accordingly, the may be many more
of the conductive interconnects besides the illustrated
interconnects 42a-c.
[0053] In some embodiments, the resistive units 38 may each be
considered to include a vertically-extending pillar 40 of first
material (e.g., channel material), and to comprise an
interconnecting unit 44 over the pillar and electrically coupled
with the pillar. The interconnecting units include first regions 66
directly over the pillars, and second regions 68 laterally offset
from the first regions. The first regions 66 have bottommost
(lowermost) surfaces 67, while the second regions have bottommost
surfaces 69. In the illustrated embodiment, the lowermost surfaces
67 are beneath the lowermost surfaces 69.
[0054] The pillars 40 extend upwardly from the conductive segments
42. Some adjacent resistive units 38 are electrically coupled to
one another through the conductive segments (specifically, the
units 38 from neighboring resistive structures 36), while other
adjacent resistive units are electrically coupled one another
through the interconnecting units 44 (specifically, the units 38
within the same resistive structures 36 as one another). In the
illustrated embodiment, the resistive components 36a and 36b may be
considered to be provided in a line between the VDD and VSS supply
terminals, and the coupling through the conductive segments 42 and
the interconnecting units 44 alternates one after another along the
line of the resistive components.
[0055] Switches 46 are provided associated with the base 12 (with
the term "associated with the base" meaning that such switches are
supported by the base, and may or may not have components extending
into semiconductor material of the base). In the illustrated
embodiment, the switches 46 correspond to a first switch SW1 (46a)
and a second switch SW2 (46b). The first switch 46a is coupled to
the conductive interconnect 42b, and the second switch 46b is
coupled to the conductive interconnect 42c. The switches 46 may be
analogous to the switches 1008 described above with reference to
FIG. 1. Although only two switches 46 are shown, in other
embodiments may be more than two switches if there are more than
two of the resistive components 36.
[0056] An output circuit 48 is provided to be associated with the
base 12. The output circuit includes an electrical feed 50 which
provides input to a gain buffer 52. A first feed interconnect 54a
extends from the first switch 46a to the electrical feed 50, and a
second feed interconnect 54b extends from the second switch 46b to
the electrical feed 50.
[0057] A reference voltage (VREF) is output from the gain buffer.
The reference voltage may be analogous to the reference voltage
described above with reference to FIG. 1.
[0058] In some embodiments, it is recognized that the pillars 40
and gating regions 22 may be considered to be incorporated into
transistors 60 analogous to the transistors 30 of FIG. 3A. However,
it may be desired that the transistors 60 are configured to be
always in an ON operational mode. Accordingly, the pillars 40 may
comprise conductive material, and in some embodiments may comprise
heavily-doped channel material. The channel material may be the
same as that utilized in the pillars 20 of the memory cells (FIG.
3A), but the heavy doping may effectively make the pillars 40
sufficiently conductive so that the transistors 60 are effectively
always ON. Alternately, the pillars 40 may comprise semiconductor
material which is depletion doped (e.g., p-type doped silicon), and
the gating regions 22 may be electrically grounded so that the
transistors 60 are effectively always ON.
[0059] The interconnecting units 44 comprise the capacitor
dielectric material 26, the upper electrodes (plate electrodes) 24
and the storage node electrodes (storage electrodes) 23, with the
storage node electrodes providing electrical coupling between the
resistive units 38a and 38b. In some embodiments, the fused storage
node structures 23 of the resistive components 36 may be considered
to correspond to conductive structures (conductive segments) 58
provided in place of the storage node electrodes 23 of the memory
cells 14 (FIG. 3A). In some embodiments, the conductive segments 58
may be referred to as second conductive segments to distinguish
them from the first conductive segments 42.
[0060] The capacitor dielectric material 26, conductive structures
58 and plate electrodes 24 together comprise capacitive components
(capacitive elements, capacitors) 62 coupled with the resistive
components 36.
[0061] FIG. 3B-1 schematically illustrates the
reference-voltage-generator 210 described above with reference to
FIG. 3B.
[0062] The capacitors 62 associated with the capacitive units 36 of
the embodiment of FIGS. 3B and 3B-1 may advantageously alleviate
undesired voltage fluctuation associated with the
reference-voltage-generator 210. In other embodiments, the
capacitors 62 may be omitted. For instance, FIG. 3C shows a
reference-voltage-generator 210 analogous to that of FIG. 3B, but
in which the interconnecting units 44 comprise conductive
structures 64 in place of the structures 58 and 24 of FIG. 3B. In
some embodiments, the conductive structures 64 may be considered to
be conductive blocks which replace the storage node electrodes 23,
the capacitor dielectric material 26 and the plate electrodes 24 of
the memory cells 14 (FIG. 3A).
[0063] The conductive structures 64 may be compositionally
homogeneous (as shown) or may comprise laminates of two or more
different compositions. In some embodiments, the dielectric
material 26 (FIG. 3B) may be omitted to form the conductive
structures 64. In other embodiments, the dielectric material may be
treated so that it becomes leaky and/or conductive.
[0064] FIG. 3C-1 schematically illustrates the
reference-voltage-generator 210 of FIG. 3C.
[0065] The embodiments of FIGS. 3B and 3C show a same number of
resistive components associated with each of the feed interconnects
54. In other embodiments, there may be a different number of
resistive components associated with one of the feed interconnects
than are associated with another of the feed interconnects. For
instance, FIG. 3D shows an example embodiment in which the feed
interconnects 54a, 54b, 54c and 54d are coupled with the conductive
segments 42b, 42d, 42e and 42f, respectively; and in which single
resistive components 36 are coupled to three of the feed
interconnects (specifically, the three interconnects 54a, 54c and
54d), while a pair of resistive components 36 (specifically, 36b
and 36c) are coupled with the fourth of the feed interconnects
(specifically, the feed interconnect 54b).
[0066] The embodiments of FIGS. 3B and 3C having a same number of
components associated with each of the feed interconnects may be
advantageous in some applications in which it is desired to have
the same amount of resistance between all of the switches 46. In
contrast, the embodiment of FIG. 3D may be advantageous in
applications in which it is desired to have a large amount of
resistance associated with one or more of the switches 46, and
smaller amounts of resistance associated with others of the
switches. The embodiment of FIG. 3D may enable resistance across
individual switches within a reference-voltage-generator to be
individually tailored for specific applications.
[0067] The multi-deck assembly of FIG. 2 may include memory cells
of the type shown in FIG. 3A along one or more of the decks
10b-10e, and may comprise any of the reference-voltage-generators
of FIGS. 3B, 3C and 3D associated with the lower deck 10b and the
base 12 (deck 10a). Although the multi-deck assembly is shown to
have four decks over the base 12, in other embodiments the
multi-deck assembly may have a different number of decks over the
base. Generally, the multi-deck assembly will comprise at least one
deck over the base 12.
[0068] FIG. 4A shows a portion of an integrated assembly 300
comprising another arrangement of memory cells 14 associated with a
memory deck 10b over a base 12 (tier 10a). The illustrated memory
cells comprise transistors 30 and capacitors 32 analogous to those
described above with reference to FIG. 3A. However, the illustrated
transistors and capacitors of FIG. 4A extend horizontally
(laterally) rather than vertically. The transistors comprise the
channel material 20 described above with reference to FIG. 3A, and
comprise the gating regions 22. The gating regions may be along
wordlines that extend in and out of the page relative to the
cross-sectional view of FIG. 4A.
[0069] The capacitors comprise the storage nodes 23, the capacitor
dielectric material 26 and the plate electrodes 24. In the
embodiment of FIG. 4A, the plate electrode 24 is shared between
capacitors on a first side of the plate electrode (an illustrated
left side), and capacitors on an opposing second side of the plate
electrode (an illustrated right side).
[0070] Digit lines 16a-d extend vertically along the memory cells
14, and are coupled with sense amplifier circuitry 18a-d (SA1
through SA4) associated with the base 12.
[0071] FIG. 4B shows an example embodiment of a
reference-voltage-generator 310, with such
reference-voltage-generator utilizing modified memory cells 14 from
the memory tier 10b of FIG. 4A.
[0072] The reference-voltage-generator 310 comprises an upper
portion 32 along the tier 10b, and comprises a lower portion 34
associated with the base 12 (tier 10a). The lower portion 34 is
under the tier 10b, and in some embodiments may be considered to be
supported by semiconductor material of the base 12.
[0073] The upper portion comprises resistive components (resistive
groupings) 36a-d. Although four resistive groupings are shown, in
other embodiments there may be more than four resistive groupings
or less than four resistive groupings. Generally, there will be at
least two of the resistive groupings 36. In some embodiments, the
illustrated resistive groupings 36a-d may be referred to as first,
second, third and fourth resistive groupings, respectively.
[0074] Each of the resistive groupings 36 includes a number of
resistive units 38 arranged in parallel relative to one another.
The resistive units 38 include horizontally-extending pillars 40,
and gating regions 22 adjacent to the pillars 40. The gating
regions 22 of FIG. 4B may have the same configurations and
compositions as the regions 22 of the memory cells 14 (FIG. 4A).
The pillars 40 may comprise any of the compositions described above
relative to the pillars 40 of FIG. 3B.
[0075] The resistive units 38 are laterally between first
vertically-extending conductive segments 42 and second
vertically-extending conductive segments 64. The conductive
segments 42 are analogous to the digit lines 16 of FIG. 4A, and the
segments 64 replace the storage node electrodes 23, capacitor
dielectric material 26 and plate electrodes 24 of the capacitors
32. In some embodiments, the segments 64 may be considered to
correspond to interconnecting units analogous to the interconnect
units 44 of FIG. 3B.
[0076] In some embodiments, the segments 42 and 64 may be referred
to as first and second vertically-extending segments, respectively.
The illustrated second segments 64 comprise wide regions 76 and
narrow regions 78 which alternate with one another along a vertical
direction. The pillars 40 are horizontally aligned with the wide
regions 76. The illustrated first segments 42 maintain a
substantially uniform width along the entire vertical expanse of
such first segments.
[0077] In the shown embodiment, the first and second segments 42
and 64 are arranged in a repeating pattern which includes a pair of
the second segments (e.g., 64a and 64b) between a pair of the first
segments (e.g., 42a and 42b).
[0078] In the illustrated embodiment, insulative material 70 is
provided to split the plate electrodes 24 into the
vertically-extending conductive segments 64. The insulative
material 70 may comprise any suitable composition(s), and in some
embodiments may comprise one or more of silicon dioxide, silicon
nitride, aluminum oxide, etc.
[0079] The conductive interconnects (conductive segments) 72 a-e
are provided to couple the various segments 42 and 64 with one
another, and to couple the outer segments 42 with the supply
terminals 212 and 214. In the shown embodiment, the conductive
interconnect 72b may be considered to be a first conductive
interconnect which couples the first resistive grouping 36a in
series with the second resistive grouping 36b. The conductive
interconnect 72a may be considered to be a second conductive
interconnect which is between the VDD supply terminal 212 and the
first resistive grouping 36a. Any of the interconnects 72c-e may be
considered to be a third conductive interconnect between the second
resistive grouping 36b and the VSS supply terminal 214.
[0080] In some embodiments, the segments 72 which interconnect
neighboring vertically-extending segments 42 with one another may
be referred to as first interconnecting segments which join
laterally adjacent first segments 42 with one another, and the
segments 72 which interconnect neighboring vertically-extending
segments 64 with one another may be referred to as second
interconnecting segments which join laterally adjacent second
segments 64 with one another. Thus, the segment 72c is an example
of a first interconnecting segment, and the segment 72b is an
example of a second interconnecting segment.
[0081] Switches 46a-d (SW1 through SW4) are associated with the
base 12 and are coupled with the interconnects 72b-e. Although four
switches are shown, there may be more than four switches or less
than four switches. Generally, there will be at least two of the
switches 46 associated with the base 12.
[0082] An output circuit 48 is provided to be associated with the
base 12. The output circuit includes an electrical feed 50 which
provides input to a gain buffer 52. Feed interconnects 54a-d extend
from the switches 46a-d, respectively, to the electrical feed
50.
[0083] A reference voltage (VREF) is output from the gain buffer.
The reference voltage may be analogous to the reference voltage
described above with reference to FIG. 1.
[0084] The pillars 40 and gating regions 22 may be incorporated
into transistors 60 analogous to the transistors described above
with reference to FIG. 3B, and may be appropriately configured to
be always in an ON operational mode. Such configuration may include
any of the approaches described above with reference to FIG.
3B.
[0085] In some embodiments, a resistor-divider-circuit
(resistance-supply-circuit, voltage-divider-circuit) 316 may be
considered to comprise the resistive components 36, the conductive
segments 42 and 64, and the interconnecting units 72. Such
resistor-divider-circuit (resistance-supply-circuit,
voltage-divider-circuit) is associated with the deck 10b.
[0086] FIG. 4B-1 schematically illustrates the
reference-voltage-generator 310 described above with reference to
FIG. 4B. Such shows the resistive units 38 arranged in parallel
relative to one another, with each of the resistive components 36
comprising a plurality of the resistive units 38. The schematic
illustration of FIG. 4B-1 also shows that the resistive components
36 are arranged in series relative to one another.
[0087] Although the illustrated configuration comprises four tiers
of the resistive units 38, it is to be understood that in other
embodiments there may be a different number of tiers of the
resistive units 38. For instance, in some embodiments there may be
eight tiers of the resistive units 38 within each of the resistive
components 36, 16 tiers, 32 tiers, 64 tiers, etc.
[0088] In some embodiments, the transistors 60 may be utilized to
control electrical flow to individual resistive units 38 (i.e., may
be utilized as switches controlling flow to the individual
resistive units). Accordingly, the pillars 40 may comprise the same
channel material as is utilized in the memory cells 14 of FIG. 4A,
and such channel material may be gated utilizing the gating regions
22. FIG. 4C shows an example configuration in which the transistors
60 are configured to be utilized as switches for controlling
electrical operation of the resistive units 38. In such
configuration, most of the switches 46 associated with the
configuration of FIG. 4B may be omitted from the base region 12.
Instead, only a single switch 46 is provided, and such is simply
used to either connect the resistive structure 316 with the gain
buffer 52, or to disconnect the resistive structure 316 from the
gain buffer. The switch 46 of FIG. 4C is optional, and may be
omitted in some applications.
[0089] FIG. 4C-1 schematically illustrates the
reference-voltage-generator 310 described above with reference to
FIG. 4C. Dark regions are provided to illustrate that the
transistors 60 are active transistors controlling electrical flow
through the resistive units 38.
[0090] The assemblies and structures discussed above may be
utilized within integrated circuits (with the term "integrated
circuit" meaning an electronic circuit supported by a semiconductor
substrate); and may be incorporated into electronic systems. Such
electronic systems may be used in, for example, memory modules,
device drivers, power modules, communication modems, processor
modules, and application-specific modules, and may include
multilayer, multichip modules. The electronic systems may be any of
a broad range of systems, such as, for example, cameras, wireless
devices, displays, chip sets, set top boxes, games, lighting,
vehicles, clocks, televisions, cell phones, personal computers,
automobiles, industrial control systems, aircraft, etc.
[0091] Unless specified otherwise, the various materials,
substances, compositions, etc. described herein may be formed with
any suitable methodologies, either now known or yet to be
developed, including, for example, atomic layer deposition (ALD),
chemical vapor deposition (CVD), physical vapor deposition (PVD),
etc.
[0092] The terms "dielectric" and "insulative" may be utilized to
describe materials having insulative electrical properties. The
terms are considered synonymous in this disclosure. The utilization
of the term "dielectric" in some instances, and the term
"insulative" (or "electrically insulative") in other instances, may
be to provide language variation within this disclosure to simplify
antecedent basis within the claims that follow, and is not utilized
to indicate any significant chemical or electrical differences.
[0093] The terms "electrically connected" and "electrically
coupled" may both be utilized in this disclosure. The terms are
considered synonymous. The utilization of one term in some
instances and the other in other instances may be to provide
language variation within this disclosure to simplify antecedent
basis within the claims that follow.
[0094] The particular orientation of the various embodiments in the
drawings is for illustrative purposes only, and the embodiments may
be rotated relative to the shown orientations in some applications.
The descriptions provided herein, and the claims that follow,
pertain to any structures that have the described relationships
between various features, regardless of whether the structures are
in the particular orientation of the drawings, or are rotated
relative to such orientation.
[0095] The cross-sectional views of the accompanying illustrations
only show features within the planes of the cross-sections, and do
not show materials behind the planes of the cross-sections, unless
indicated otherwise, in order to simplify the drawings.
[0096] When a structure is referred to above as being "on",
"adjacent" or "against" another structure, it can be directly on
the other structure or intervening structures may also be present.
In contrast, when a structure is referred to as being "directly
on", "directly adjacent" or "directly against" another structure,
there are no intervening structures present. The terms "directly
under", "directly over", etc., do not indicate direct physical
contact (unless expressly stated otherwise), but instead indicate
upright alignment.
[0097] Structures (e.g., layers, materials, etc.) may be referred
to as "extending vertically" to indicate that the structures
generally extend upwardly from an underlying base (e.g.,
substrate). The vertically-extending structures may extend
substantially orthogonally relative to an upper surface of the
base, or not. The term "substantially vertical" means vertical to
within reasonable tolerances of fabrication and measurement. In
some embodiments, vertically-extending structures may extend to
within .+-.10.degree. of vertical relative to a horizontal surface
of an underlying base.
[0098] Structures (e.g., layers, materials, etc.) may be referred
to as "extending horizontally" to indicate that the structures
generally along a same direction as a horizontal upper surface of
underlying base (e.g., substrate). The horizontally-extending
structures may extend substantially parallel relative to an upper
surface of the base, or not. The term "substantially parallel"
means parallel to within reason will tolerances of fabrication and
measurement. In some embodiments, horizontally-structures may
extend to within .+-.10.degree. of vertical relative to a
horizontal surface of an underlying base.
[0099] Some embodiments include an integrated assembly having a
deck over a base, and having memory cells supported by the deck.
Each of the memory cells includes a capacitive unit and a
transistor. The individual capacitive units of the memory cells
each have a storage node electrode, a plate electrode, and a
capacitor dielectric material between the storage node electrode
and the plate electrode. A reference-voltage-generator includes
resistive units supported by the deck. The resistive units are
similar to the memory cells but include interconnecting units in
place of the capacitive units. The interconnecting units of some
adjacent resistive units are shorted to one another.
[0100] Some embodiments include an integrated assembly comprising a
deck over a base. Resistor-divider-circuitry
(resistance-supply-circuitry, voltage-divider-circuitry) extends
from a VDD supply terminal to a VSS supply terminal and is
supported by the deck. The resistor-divider-circuitry
(resistance-supply-circuitry, voltage-divider-circuitry) includes
resistive units. Each of the resistive units includes a
vertically-extending pillar of first material and an
interconnecting unit over the pillar and electrically coupled with
the pillar. Each of the interconnecting units includes a first
region directly over the pillar and a second region laterally
offset from the first region. The first region has a lower
bottommost surface than the second region. The pillars extend
upwardly from conductive segments. Some adjacent resistive units
are electrically coupled to one another through the conductive
segments and some neighboring resistive units are electrically
coupled to one another through the interconnecting units. An output
circuit is associated with the base. The output includes an
electrical feed coupled to a gain buffer, and includes a reference
voltage output from the gain buffer. At least two feed
interconnects extend from the resistor-divider-circuitry to the
electrical feed. Switches are along the feed interconnects.
[0101] Some embodiments include an integrated assembly comprising a
deck over a base. Resistor-divider-circuitry extends from a VDD
supply terminal to a VSS supply terminal and is supported by the
deck. The resistor-divider-circuitry includes vertically-extending
segments and resistive units extending horizontally between the
vertically-extending segments. The vertically-extending segments
include first segments and second segments. The second segments
comprise vertically-alternating wide regions and narrow regions.
The resistive units each includes a horizontally-extending pillar
of first material. The pillars of first material extend from the
first segments to the second segments and are horizontally aligned
with the wide regions of the second segments. An output circuit is
associated with the base. The output includes an electrical feed
coupled to a gain buffer, and includes a reference voltage output
from the gain buffer. At least one feed interconnect extends from
the resistor-divider-circuitry to the electrical feed.
[0102] In compliance with the statute, the subject matter disclosed
herein has been described in language more or less specific as to
structural and methodical features. It is to be understood,
however, that the claims are not limited to the specific features
shown and described, since the means herein disclosed comprise
example embodiments. The claims are thus to be afforded full scope
as literally worded, and to be appropriately interpreted in
accordance with the doctrine of equivalents.
* * * * *