U.S. patent application number 17/429043 was filed with the patent office on 2022-04-28 for crystal composition (cc) comprising 4,4'-dichlorodiphenylsulfoxide crystals (c).
The applicant listed for this patent is BASF SE. Invention is credited to Stefan BLEI, Jun GAO, Lukas METZGER, Christian SCHUETZ, Indre THIEL.
Application Number | 20220127221 17/429043 |
Document ID | / |
Family ID | |
Filed Date | 2022-04-28 |
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United States Patent
Application |
20220127221 |
Kind Code |
A1 |
THIEL; Indre ; et
al. |
April 28, 2022 |
CRYSTAL COMPOSITION (CC) COMPRISING 4,4'-DICHLORODIPHENYLSULFOXIDE
CRYSTALS (C)
Abstract
The invention relates to a crystal (C) consisting of at least
95% by weight of 4,4'-dichlorodiphenylsulfoxide, 0 to 2% by weight
of impurities and 0 to 3% by weight of an organic solvent (os).
Moreover, the present invention relates to a crystal composition
(CC) comprising crystals (C) and a process for the production of
the crystal composition (CC) and the crystal (C).
Inventors: |
THIEL; Indre; (Ludwigshafen
am Rhein, DE) ; SCHUETZ; Christian; (Ludwigshafen am
Rhein, DE) ; BLEI; Stefan; (Ludwigshafen am Rhein,
DE) ; GAO; Jun; (Ludwigshafen am Rhein, DE) ;
METZGER; Lukas; (Ludwigshafen am Rhein, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
BASF SE |
Ludwigshafen am Rhein |
|
DE |
|
|
Appl. No.: |
17/429043 |
Filed: |
February 4, 2020 |
PCT Filed: |
February 4, 2020 |
PCT NO: |
PCT/EP2020/052675 |
371 Date: |
August 6, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62802983 |
Feb 8, 2019 |
|
|
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International
Class: |
C07C 315/06 20060101
C07C315/06 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 8, 2019 |
EP |
19156145.5 |
Claims
1. Crystal composition (CC) comprising crystals (C), wherein the
crystals (C) consist of (a) at least 95% by weight of
4,4'-dichlorodiphenylsulfoxide, (b) 0 to 2% by weight of
impurities, and (c) 0 to 3% by weight of an organic solvent (os),
based on the total weight of the crystals (C) contained in the
crystal composition (CC), wherein the crystal composition (CC) has
a d10,.sub.3 -value in the range of 100 to 400 .mu.m, a d50,.sub.3
-value in the range of 300 to 800 .mu.m and a d90,.sub.3 -value in
the range of 700 to 1500 .mu.m, wherein the d10,.sub.3-value is
lower than the d50,.sub.3-value and the d50,.sub.3-value is lower
than the d90,.sub.3-value.
2. A crystal composition (CC) according to claim 1, wherein the
crystal composition (CC) comprises at least 95% by weight of
crystals (C), based on the total weight of the crystal composition
(CC).
3. A crystal composition (CC) according to claim 1, wherein the
crystal composition (CC) shows a bulk density in the range of 600
to 950 kg/m.sup.3.
4. A crystal composition (CC) according to claim 1, wherein the
average aspect ratio of the crystals (C) are in the range of 0.2 to
1.
5. A crystal composition (CC) according to claim 1, wherein the
average sphericity of the crystals (C) is in the range of 0.75 to
0.85.
6. A crystal composition (CC) according to claim 1, wherein the
Hausner ratio is in the range of 1.05 to 1.27.
7. A crystal composition (CC) according to claim 1, wherein the
unit cell of the crystals (C) is monoclinic, space group C 2/m,
cell lengths a=16.05 .ANG..+-.0.05 .ANG., b=9.82 .ANG..+-.0.05
.ANG., c=7.21 .ANG..+-.0.05 .ANG., cell angles alpha
90.degree..+-.0.1.degree., beta 95.7.degree..+-.0.1.degree., gamma
90.degree..+-.0.1.degree., and a cell volume 1131.5
.ANG..sup.3.+-.1 .ANG..sup.3.
8. A crystal (C) consisting of (a) at least 95% by weight
4,4'-dichlorodiphenylsulfoxide, (b) 0 to 2% by weight of
impurities, and (c) 0 to 3% by weight of an organic solvent (os),
based in each case on the total weight of the crystal (C), wherein
the outer surface of the crystal (C) comprises i) a six-sided base
surface (bsu) and ii) a six-sided top surface (tsu) and iii) six
side surfaces (ssu1 to ssu6), joining the corresponding sides of
the six-sided base surface (bsu) and the six-sided top surface
(tsu).
9. A crystal (C) according to claim 8, wherein the six-sided base
surface (bsu), the six-sided top surface (tsu) and the six side
surfaces (ssu1 to ssu6) account for at least 90% of the outer
surface of the crystal (C).
10. A crystal (C) according to claim 8, wherein the diameter (db)
of the six-sided base surface (bsu) and the diameter (dt) of the
six-sided top surface (tsu) are each independently in the range of
50 to 1500 .mu.m.
11. A crystal (C) according to claim 8, wherein the length (I1) of
the first side surface (ssu1), the length (I2) of the second side
surface (ssu2), the length (I3) of the third side surface (ssu3),
the length (I4) of the fourth side surface (ssu4), the length (I5)
of the fifth side surface (ssu5) and the length (I6) of the sixth
side surface (ssu6) are each independently in the range of 100 to
3000 .mu.m.
12. A crystal (C) according to claim 8, wherein the ratio of the
average of the diameter (db) and the diameter (dt) to the average
of the length (I1), the length (I2), the length (I3), the length
(I4), the length (I5) and the length (I6) is in the range of 0.2 to
1.
13. Crystal (C) according to claim 8, wherein the impurities (b)
comprise at least 90% by weight of one or more compounds selected
from the group consisting of 2,4'-dichlorodiphenylsulfoxide,
3,4'-dichlorodiphenylsulfoxide, 2,2'-dichlorodiphenylsulfoxide,
4,4'-dichlorodiphenylsulfide, and one or more aluminum compounds
based on the total weight of the impurities (b) contained in the
crystal (C).
14. A crystal composition (CC) according to claim 1 obtained by a
process comprising the steps: I) cooling a first liquid mixture
comprising 4,4'-dichlorodiphenylsulfoxide dissolved in an organic
solvent (os) to obtain a suspension comprising crystallized
4,4'-dichlorodiphenylsulfoxide and the organic solvent (os), II)
filtering the suspension obtained in step I) to obtain a filtrate
comprising 4,4'-dichlorodiphenylsulfoxide dissolved in the organic
solvent (os), wherein the filtrate has a lower concentration of
4,4'-dichlorodiphenylsulfoxide compared to the first liquid
mixture, and a filter residue comprising the crystallized
4,4'-dichlorodiphenylsulfoxide, III) concentrating the filtrate
obtained in step II) to obtain a second liquid mixture, wherein the
second liquid mixture has a higher concentration of
4,4'-dichlorodiphenylsulfoxide compared to the filtrate, IV)
recycling at least a part of the second liquid mixture obtained in
step III) into step I), and V) drying the filter residue obtained
in step II) to obtain the crystal composition (CC), wherein the
organic solvent is chlorobenzene, toluene, xylene, mesitylene,
methanol or a mixture of two or more of said solvents.
15. A crystal (C) obtained by the process of claim 14, further
comprising the step: VI) separating a crystal (C) out of the
crystal composition (CC) obtained in step V).
16. Use of the crystal composition (CC) as an intermediate for the
production of at least one product selected from the group
consisting of monomers, polymers and pharmaceuticals.
Description
[0001] The invention relates to a crystal (C) consisting of at
least 95% by weight of 4,4'-dichlorodiphenylsulfoxide, 0 to 2% by
weight of impurities and 0 to 3% by weight of an organic solvent
(os). Moreover, the present invention relates to a crystal
composition (CC) comprising crystals (C) and a process for the
production of the crystal composition (CC) and the crystal (C).
[0002] 4,4'-dichlorodiphenylsulfoxide is also called
1-chloro-4-(4-chlorophenyl)sulfinyl benzene or
bis(4-chlorophenyl)sulfoxide. 4,4'-dichlorodiphenylsulfoxide is a
white to pale yellow solid and has a molecular weight of 271.16
g/mol, a chemical formula C.sub.12--H.sub.8--Cl.sub.2--OS and the
CAS-registry-number of 4,4'-dichlorodiphenylsulfoxide is 3085-42-5,
the chemical structure is as follows
##STR00001##
[0003] 4,4'-dichlorodiphenylsulfoxide is commercially available,
for example from abcr GmbH Switzerland, Alfa Aesar or TCI
America.
[0004] For the production of 4,4'-dichlorodiphenylsulfoxide several
processes are known. One common process is a
Friedel-Crafts-Reaction with thionyl chloride and chlorobenzene as
starting materials in the presence of a catalyst, for example
aluminum(III)chloride or iron(III)chloride. Sun, X. et al,
"Iron(III) chloride (FeCl.sub.3)-catalyzed electrophilic aromatic
substitution of chlorobenzene with thionyl chloride (SOCl.sub.2)
and the accompanying auto-redox in sulfur to give diaryl sulfides
(Ar.sub.2S): Comparison to catalysis by aluminum chloride
(AlCl.sub.3)", phosphorus, sulfur, and silicon, 2017, Vol. 192, No.
3, pages 376 to 380, and Sun, X. et al, "Investigations on the
Lewis-acids-catalysed electrophilic aromatic substitution reactions
of thionyl chloride and selenyl chloride, the substituent effects,
and the reaction mechanisms", Journal of Chemical Research 2013,
pages 736 to 744, discloses general processes for the production of
4,4'-dichlorodiphenylsulfoxide. In these documents the reaction
mixture containing 4,4'-dichlordiphenylsulfoxide is poured into ice
water. Subsequently diethylether is added and all the contents are
added to a separation funnel and the organic product is extracted
with diethylether. Then all the ether solutions are combined dried
with sodium sulfate and filtered. Hereinafter the diethylether is
removed to obtain 4,4'-dichlorodiphenylsulfoxide.
[0005] U.S. Pat. No. 2,618,582 discloses a process for the
preparation of diaryldisulfoxides. In example II of U.S. Pat. No.
2,618,582, the preparation of di-p-(chlorophenyl)disulfoxide is
disclosed, which is also named 4,4'-dichlorodiphenyldisulfoxide.
This compound has a melting point of 136.degree. C. and the
following chemical structure:
##STR00002##
[0006] RU 2159764 C1 discloses a process for the preparation of
4,4'-dichlorodiphenylsulfoxide. The product is recrystallized from
chloroform. RU 2158257 C1 also discloses a process for the
preparation of 4,4'-dichlorodiphenylsulfoxide, wherein the product
is recrystallized from ethyl acetate.
[0007] Commercially available 4,4'-dichlorodiphenylsulfoxide is
provided in particulate powder form. In the processes described in
the above mentioned documents 4,4'-dichlorodiphenylsulfoxide is
also obtained in particulate powder form.
[0008] The powdery particulate 4,4'-dichlorodiphenylsulfoxides
commercially available, and the powdery particulate
4,4'-dichlorodiphenylsulfoxides obtained in the processes described
in the above mentioned documents, however, for some applications
show insufficient flowability. Moreover, in some cases the content
of by-product contained in the 4,4'-dichlorodiphenylsulfoxides or
the APHA-color number is too high.
[0009] Therefore, the object underlying the present invention is to
provide 4,4'-dichlorodiphenylsulfoxide in particulate form, which
does not have the above-mentioned disadvantages of the prior art or
has them only in a significantly reduced extent.
[0010] This object was solved by a crystal composition (CC)
comprising crystals (C), wherein the crystals (C) consist of [0011]
(a) at least 95% by weight of 4,4'-dichlorodiphenylsulfoxide,
[0012] (b) 0 to 2% by weight of impurities and [0013] (c) 0 to 3%
by weight of an organic solvent (os), based on the total weight of
the crystals (C) contained in the crystal composition (CC), wherein
the crystal composition (CC) has [0014] a d10,.sub.3-value in the
range of 100 to 400 .mu.m, [0015] a d50,.sub.3-value in the range
of 300 to 800 .mu.m and [0016] a d90,.sub.3-value in the range of
700 to 1500 .mu.m, wherein the d10,.sub.3-value is lower than the
d50,.sub.3-value and the d50,.sub.3-value is lower than the
d90,.sub.3-value.
[0017] It had been found that, surprisingly, the crystal
composition (CC) shows a better flowability compared to the
particulate 4,4'-dichlorodiphenylsulfoxides described in the state
of the art. Moreover, it has been found that the crystals (C)
comprised in the crystal composition have a low content of
by-product, a low content of residual solvent as well as a low
APHA-color number.
[0018] Crystal Composition (CC)
[0019] The crystal composition (CC) comprises crystals (C). In a
preferred embodiment the crystal composition (CC) comprises at
least 95% by weight of the crystals (C), more preferred the crystal
composition (CC) comprises at least 98% by weight of crystals (C)
even more preferred the crystal composition (CC) comprises at least
99% by weight of the crystals (C) and particularly preferred the
crystal composition (CC) comprises at least 99.5% by weight of
crystals (C) in each case based on the total weight of the crystal
composition (CC). In an even more preferred embodiment the crystal
composition (CC) consists of the crystals (C).
[0020] Therefore, another object of the present invention is a
crystal composition (CC), wherein the crystal composition (CC)
comprises at least 95% by weight of crystals (C), based on the
total weight of the crystal composition (CC).
[0021] The crystal composition (CC) of the invention generally
has:
[0022] a d10,.sub.3-value in the range of 100 to 400 .mu.m,
[0023] a d50,.sub.3-value in the range of 300 to 800 .mu.m and
[0024] a d90,.sub.3-value in the range of 700 to 1500 .mu.m.
[0025] Preferably, the crystal composition (CC) of the invention
has:
[0026] a d10,.sub.3-value in the range of 200 to 400 .mu.m,
[0027] a d50,.sub.3-value in the range of 400 to 750 .mu.m and
[0028] a d90,.sub.3-value in the range of 800 to 1200 .mu.m.
[0029] In each case on condition that the d10,.sub.3-value is lower
than the d50,.sub.3-value and the d50,.sub.3-value is lower than
the d90,.sub.3-value.
[0030] In the context of the present invention the
"d10,.sub.3-value", "d50,.sub.3-value", and "d90,.sub.3-value"
describe the particle sizes based on the volume of the
particles.
[0031] In the context of the present invention, the
"d10,.sub.3-value" is understood to mean the particle size at which
10% by volume of the particles, preferably the crystals (C), based
on the total volume of the particles, preferably the crystals (C),
are smaller than or equal to the d10,.sub.3-value and 90% by volume
of the particles, preferably the crystals (C), based on the total
volume of the particles, preferably the crystals (C), are larger
than the d10,.sub.3-value. By analogy, "d50,.sub.3-value" is
understood to mean the particle size at which 50% by volume of the
particles, preferably the crystals (C), based on the total volume
of the particles, preferably the crystals (C), are smaller than or
equal to the d50,.sub.3-value and 50% by volume of the particles,
preferably the crystals (C), based on the total volume of the
particles, preferably the crystals (C), are larger than the
d50,.sub.3-value. Correspondingly, the "d90,.sub.3-value" is
understood to mean the particle size at which 90% by volume of the
particles, preferably the crystals (C), based on the total volume
of the particles, preferably the crystals (C), are smaller than or
equal to d90,.sub.3-value and 10% by volume of the particles,
preferably the crystals (C), based on the total volume of the
particles, preferably the crystals (C), are larger than
d90,.sub.3-value.
[0032] The particle sizes of the crystals (C) comprised in the
crystal composition (CC), the d10,.sub.3-values, the
d50,.sub.3-values and the d90,.sub.3-values, as well as the average
aspect ratios (b/l.sub.3), the average sphericity (SPTH.sub.3), the
average X.sub.c min diameter and the average maximum Feret diameter
(X.sub.Fe max) are determined with a Camsizer.RTM. XT (of the
company Retsch Technology) using the measuring methods described in
the manual "CAMSIZER.RTM. Caracteristics, Basics of definition DIN
66141, Retsch Technology dated Nov. 5, 2009" which is available
under the following www.-link:
http://www.horiba.com/fileadmin/uploads/Scientific/Documents/PSA/Manuals/-
CAMSIZER_Characteristics_Nov2009. pdf
[0033] The particle sizes (hereinafter the wording "particle size"
and "particle diameter" are used synonymously and have the same
meaning) are determined on basis of definition DIN 66141 dated
February 1974. Therefore, the crystal composition (CC) is fed via a
vibrating feeder past the measurement optic of the Camsizer.RTM. XT
at room temperature (20.degree. C.) and normal pressure (1,01325
bar), wherein at least 80 000 particles, preferably crystals (C),
are measured.
[0034] The d10,.sub.3-values, the d50,.sub.3-values and the
d90,.sub.3-values are determined by the X.sub.area method. With the
measuring method X.sub.area the particle diameter is calculated by
the area of particle projection using the following formula:
X a .times. r .times. e .times. a = 4 .times. A .pi. ,
##EQU00001##
wherein the diameter of the area equivalent circle with a volume of
a sphere with the diameter of X.sub.area is determined.
[0035] The bulk density of the crystal composition (CC) is
generally in the range of 600 to 950 kg/m.sup.3, preferably in the
range of 700 to 850 kg/m.sup.3 and more preferably in the range of
720 to 820 kg/m.sup.3. The bulk density of the crystal composition
(CC) is determined according to EN ISO 60:2000-01; DIN 5 3 468.
[0036] The tappered density (measured after 1250 lifts) of the
crystal composition (CC) is generally in the range of 700 to 1050
kg/m.sup.3, preferably in the range of 800 to 950 kg/m.sup.3 and
more preferably in the range of 820 to 920 kg/m.sup.3. The tappered
density of the crystal composition (CC) is determined according to
DIN ISO 787 part 11 (after 1250 lifts).
[0037] The Hausner ratio of the crystal composition (CC) is
generally in the range of 1.05 to 1.27, preferably in the range of
1.08 to 1.25 and more preferably in the range of 1.1 to 1.2.
[0038] The Hausner ratio is the ratio of tappered density to bulk
density. The Hausner ratio is a parameter for the flowability of
particulate compositions, wherein the flowability is classified
according to the following table:
TABLE-US-00001 Hausner ratio Flowability 1.05-1.18 Excellent
1.14-1.19 Good 1.22-1.27 Acceptable 1.3-1.54 Poor 1.49-1.61 Very
Poor >1.67 Not Flowing
[0039] Another object of the present invention, therefore, is a
crystal composition (CC), wherein the Hausner ratio is in the range
of 1.05 to 1.27.
[0040] The crystal composition (CC) preferably has a flowability
(ff.sub.c) according to Jenike and ASTM-D 6773 at an initial shear
stress of 3 kPa in the range of 7 to 50, preferably in the range of
8 to 40, more preferably in the range of 8.5 to 20 and particularly
preferred in the range of 9 to 15.
[0041] According to Jenike the flowability is classified according
the following table:
TABLE-US-00002 ff.sub.c Flowability <1 Not flowing 1< to
<2 Very poor 2< to <4 Poor 4< to <10 Good 10<
Excellent
[0042] The crystals (C) contained in the crystal composition (CC)
according to the invention generally have an average aspect ratio
in the range of 0.2 to 1, preferably in the range of 0.3 to 0.8,
more preferably in the range of 0.4 to 0.7 and particularly
preferred in the range of 0.5 to 0.65.
[0043] The average aspect ratio of the crystals (C) comprised in
the crystal composition (CC) is determined with a Camsizer.RTM. XT
using the method b/l.sub.3 as described in the above referenced
manual on basis of definition DIN 66141 dated February 1974. The
aspect ratio is calculated by using the following formula:
b / l 3 = X c .times. .times. min X Fe .times. .times. max
##EQU00002##
[0044] X.sub.c min is the volume average particle diameter which is
the shortest cort of the measured set of maximum corts of the
particle projection (the crystal (C) projection).
[0045] FIG. 8 shows an example, how X.sub.c min is measured.
X.sub.c min is the volume average of the shortest cort over all
particles (crystals (C)), comprised in the crystal composition
(CC).
[0046] The maximum feret diameter (X.sub.Fe max) is the volume
average particle diameter over all particles (crystals (C)),
comprised in the crystal composition (CC), which is the longest
ferret diameter of the measured set of feret diameter of a
particle. The determination of the maximum feret diameter x.sub.Fe
max is shown by the way of example in FIG. 8.
[0047] The crystals (C) contained in the crystal composition (CC)
according to the invention have generally an average sphericity
(SPHT.sub.3) in the range of 0.75 to 0.85, preferably in the range
of 0.76 to 0.82 and more preferably in the range of 0.77 to 0.81.
The sphericity is measured according to ISO 9276-6:2012-1.
[0048] Therefore, another object of the present invention is a
crystal composition (CC), wherein the average sphericity of the
crystals (C) is in the range of 0.75 to 0.85.
[0049] The crystal composition (CC) has generally an APHA-color
number (ASTM D1209) in the range of 10 to 120, preferably in the
range of 15 to 100, more preferably in the range of 20 to 80. The
APHA-color numbers were measured on a Hach Lange LICO 500
instrument; 2.5 g 4,4'-DCDPSO
(4,4'-DCDPSO=4,4'dichlorodiphenylsulfoxide) were dissolved in 20 ml
NMP and measured against pure NMP (NMP=N-Methyl-2-pyrrolidone).
[0050] Crystal (C)
[0051] Another object of the present invention is a crystal (C)
consisting of [0052] (a) at least 95% by weight
4,4'-dichlorodiphenylsulfoxide, [0053] (b) 0 to 2% by weight of
impurities and [0054] (c) 0 to 3% by weight of an organic solvent
(os), based in each case on the total weight of the crystal (C),
wherein the outer surface of the crystal (C) comprises [0055] i) a
six-sided base surface (bsu) and [0056] ii) a six-sided top surface
(tsu) and [0057] iii) six side surfaces (ssu1 to ssu6), joining the
corresponding sides of the six-sided base surface (bsu) and the
six-sided top surface (tsu).
[0058] The crystal (C) can differ from the crystals (C) comprised
in the crystal composition (CC). In a preferred embodiment, the
crystal (C) does not differ from the crystals (C) comprised in the
crystal composition (CC). In a preferred embodiment, therefore, the
features and preferences mentioned above in a view of the crystal
composition (CC) apply for the crystal (C) accordingly. In another
preferred embodiment, therefore, the features and preferences
mentioned hereinafter in view of the crystal (C) apply for the
crystal composition (CC) accordingly.
[0059] Another object of the present invention, therefore, is a
crystal composition (CC) comprising crystals (C), wherein the
crystals (C) consist of [0060] (a) at least 95% by weight of
4,4'-dichlorodiphenylsulfoxide, [0061] (b) 0 to 2% by weight of
impurities, and [0062] (c) 0 to 3% by weight of an organic solvent
(os), based on the total weight of the crystals (C) contained in
the crystal composition (CC), wherein the crystal composition (CC)
has [0063] a d10,.sub.3-value in the range of 100 to 400 .mu.m,
[0064] a d50,.sub.3-value in the range of 300 to 800 .mu.m and
[0065] a d90,.sub.3-value in the range of 700 to 1500 .mu.m,
wherein the d10,.sub.3-value is lower than the d50,.sub.3-value and
the d50,.sub.3-value is lower than the d90,.sub.3-value, wherein
the outer surface of the crystals (C) comprises [0066] i) a
six-sided base surface (bsu) and [0067] ii) a six-sided top surface
(tsu) and [0068] iii) six side surfaces (ssu1 to ssu6), joining the
corresponding sides of the six-sided base surface (bsu) and the
six-sided top surface (tsu)
[0069] In a preferred embodiment the crystal (C) comprises at least
96% by weight, more preferably at least 97% by weight and most
preferably at least 98% by weight of
4,4'-dichlorodiphenylsulfoxide, based in each case on the total
weight of the crystal (C).
[0070] In a preferred embodiment the crystal (C) comprises from 0
to 1.5% by weight, more preferably from 0 to 1% by weight of
impurities, based in each case on the total weight of the crystal
(C).
[0071] In a preferred embodiment the crystal (C) comprises from 0
to 2.5% by weight, more preferably from 0 to 2% by weight, most
preferably from 0 to 1% by weight and particularly preferred from 0
to 0.7% by weight of an organic solvent (os), based in each case on
the total weight of the crystal (C).
[0072] Another object of the present invention is a crystal (C)
wherein the impurities (b) comprise at least 90% by weight,
preferably at least 95% by weight, more preferably at least 98% by
weight and particularly preferred at least 99% by weight of one or
more compounds selected from the group consisting of
2,4'-dichlorodiphenylsulfoxide, 3,4'-dichlorodiphenylsulfoxide,
2,2'-dichlorodiphenylsulfoxide, 4,4'-dichlorodiphenyl-sulfide, and
one or more aluminum compounds, in each case based on the total
weight of the impurities (b) contained in the crystal (C).
[0073] In another particularly preferred embodiment the impurities
contained in the crystal (C) consist of one or more compounds
selected from the group consisting of
2,4'-dichlorodiphenylsulfoxide, 3,4'-dichlorodiphenylsulfoxide,
2,2'-dichlorodiphenyl-sulfoxide, 4,4'-dichlorodiphenylsulfide, and
one or more aluminum compounds.
[0074] The aluminum compounds optionally contained as impurities in
the crystal (C) may be one or more compounds selected from the
group consisting of AlCl.sub.3, Al(OH)Cl.sub.2, Al(OH).sub.2Cl,
Al(OH).sub.3 and AlO(OH).
[0075] The aluminum content in the crystal (C) is preferably in the
range of 2 to 100 ppm by weight, more preferably in the range of 5
to 80 ppm by weight and most preferably in the range of 7 to 60 ppm
by weight, in each case based on the total weight of the crystal
(C). The aluminum content is determined as described below in the
section examples.
[0076] Another preferred object of the present invention is a
crystal (C) wherein the organic solvent (os) comprises at least 98%
by weight of monochlorobenzene, based on the total weight of the
organic solvent (os) contained in the crystal (C).
[0077] Another preferred object of the present invention is a
crystal composition (CC), wherein the unit cell of the crystals (C)
is monoclinic, space group C 2/m, cell lengths a=16.05
.ANG..+-.0.05 .ANG., b=9.82 .ANG..+-.0.05 .ANG., c=7.21
.ANG..+-.0.05 .ANG., cell angles alpha 90.degree..+-.0.1.degree.,
beta 95.7.degree..+-.0.1.degree., gamma 90.degree..+-.0.1.degree.,
and a cell volume 1131.5 .ANG..sup.3.+-.1 .ANG..sup.3. In the
present invention .ANG. means .ANG.ngstrom and equals 0.1 nm.
[0078] The geometry of the outer surface of the crystal (C) is
similar to a prism with a six-sided base surface and a six-sided
top surface, wherein the jacket surface of the prism comprises
six-side surfaces. FIG. 1A shows the net of a prism with a
symmetrical six-sided base surface (bsu) and a symmetrical
six-sided top surface (tsu) and six side surfaces (ssu1 to
ssu6).
[0079] In a preferred embodiment the six-sided base surface (bsu),
the six-sided top surface (tsu) and the six side surfaces (ssu1 to
ssu6) account for at least 90% of the outer surface of the crystal
(C). Another object of the present invention therefore, is a
crystal (C), wherein the six-sided base surface (bsu), the
six-sided top surface (tsu) and the six side surfaces (ssu1 to
ssu6) account for at least 90% of the outer surface of the crystal
(C).
[0080] In a preferred embodiment the six-sided base surface (bsu),
the six-sided top surface (tsu) and the six-side surface (ssu1 to
ssu6) account for at least 92% of the outer surface of the crystal
(C).
[0081] The crystal (C) according to the present invention may
contain further surfaces for example irregularities or intergrowth.
Generally the further surfaces of the crystal (C) according to the
invention account for 0 to at most 10%, preferably from 0 to at
most 8% of the outer surface of the crystal (C).
[0082] Another preferred object of the present invention is a
crystal (C), wherein the diameter (db) of the six-sided base
surface (bsu) and the diameter (dt) of the six-sided top surface
(tsu) are each independently in the range of 50 to 1500 .mu.m,
preferably in the range of 100 to 1200 .mu.m.
[0083] Another preferred object of the present invention is a
crystal (C), wherein the length (I1) of the first side surface
(ssu1), the length (I2) of the second side surface (ssu2), the
length (I3) of the third side surface (ssu3), the length (I4) of
the fourth side surface (ssu4), the length (I5) of the fifth side
surface (ssu5) and the length (I6) of the sixth side surface (ssu6)
are each independently in the range of 100 to 3000 .mu.m,
preferably in the range of 200 to 2500 .mu.m.
[0084] The six-sided top surface (tsu) and the six-sided base
surface (bsu) may be symmetrical or asymmetrical. If the six-sided
top surface (tsu) and the six-sided base surface (bsu) are
symmetrical the six sides (tsi1 to tsi6) of the six-sided top
surface (tsu) as well as the six sides (bsi1 to bsi6) of the base
surface (bsu) have the same length. In this case the distance
(dt14) between the first corner (ct1) and the fourth corner (ct4)
as well as the distance (dt36) between the third corner (ct3) and
the sixth corner (ct6) and the distance (dt25) between the second
corner (ct2) and the fifth corner (ct5) of the top surface (tsu)
have all the same length. If the base surface (bsu) is symmetrical,
the distances (db14), (db25) and (db36) also have the same length.
Therefore, for a symmetrical top surface (tsu) the diameter (dt)
equals the distances (dt14), (dt25) and (dt36). For a symmetrical
base surface (bsu) the diameter (db) equals the distances (db14),
(db25) and (db36).
[0085] In case the crystal (C) has an asymmetrical base surface
(bsu) and/or an asymmetrical top surface (tsu) the diameter (db) of
the six-sided base surface (bsu) in a preferred embodiment is the
average of the distances (db14), (db25) and (db36). The distance
(db14) is the shortest distance between the first corner (cb1) and
the fourth corner (cb4) of the six-sided base surface (bsu) of the
crystal (C). The distance (db25) is the shortest distance between
the second corner (cb2) and the fifth corner (cb5) and the distance
(db36) is the shortest distance between the third corner (cb3) and
the sixth corner (cb6) and the diameter (dt) of the six-sided top
surface (tsu) in a preferred embodiment is the average of the
distances (dt14), (dt25) and (dt6). The distance (dt14) is the
shortest distance between the first corner (ct1) and the fourth
corner (ct4) of the six-sided top surface (tsu) of the crystal (C).
The distance (dt25) is the shortest distance between the second
corner (ct2) and the fifth corner (ct5) and the distance (dt36) is
the shortest distance between the third corner (ct3) and the sixth
corner (ct6), as illustrated by example in FIG. 1B.
[0086] The side surfaces (ssu1 to ssu6) independently of each other
may have essentially the form of a square, a rectangle, a rhombus,
a kite, a parallelogram, an isosceles trapezium or an irregular
quadrilateral. In case the side surfaces (ssu1 to ssu6) have an
asymmetrical form, the lengths (I1 to I6) of the side surfaces
(ssu1 to ssu6) are preferably determined as follows. As illustrated
in FIG. 10 the length (I1) of the first side surface (ssu1) is the
average of the shortest distance (I11) between the first corner
(ct1) of the top surface (tsu) and first corner (bt1) of the base
surface (btu) and the shortest distance (I22) between the second
corner (ct2) of the top surface (tsu) and the second corner (bt2)
of the second corner (bt2) of the base surface (bsu). Accordingly,
in this case the length (I2) of the second side surface (ssu2) is
the average of the shortest distance (I22) between the second
corner (ct2) of the top surface (tsu) and the second corner (bt2)
of the second corner (bt2) of the base surface (bsu) and the
shortest distance (I33) between the third corner (ct3) of the top
surface (tsu) and third corner (bt3) of the base surface (btu).
[0087] The lengths (I3 to I6) are determined accordingly.
[0088] The term "have essentially the form of a square, a
rectangle, a rhombus, a kite, a parallelogram, an isosceles
trapezium or an irregular quadrilateral" according to the present
invention may be defined as follows: "have essentially the form of
a square, a rectangle, a rhombus, a kite, a parallelogram, an
isosceles trapezium or an irregular quadrilateral" defines that the
side surfaces (ss1 to ss6) of the crystal (C) occupy at least 80%,
preferred at least 85%, more preferred at least 90%, and
particularly preferred 50% of the interior surface of a
hypothetical best fit of a square, a rectangle, a rhombus, a kite,
a parallelogram, an isosceles trapezium or an irregular
quadrilateral in which the side surfaces (ss1 to ss6) of the
crystal (C) fit.
[0089] The dimensions of the crystal (C) are preferably measured
using light microscopy.
[0090] The crystal composition (CC) according to the present
invention can be produced by a process comprising the steps: [0091]
I) cooling a first liquid mixture comprising
4,4'-dichlorodiphenylsulfoxide dissolved in an organic solvent (os)
to obtain a suspension comprising crystallized
4,4'-dichlorodiphenylsulfoxide and the organic solvent (os), [0092]
II) filtering the suspension obtained in step I) to obtain a
filtrate comprising 4,4'-dichlorodiphenylsulfoxide dissolved in the
organic solvent (os), wherein the filtrate has a lower
concentration of 4,4'-dichlorodiphenylsulfoxide compared to the
first liquid mixture, and a filter residue comprising the
crystallized 4,4'-dichlorodiphenylsulfoxide, [0093] III)
concentrating the filtrate obtained in step II) to obtain a second
liquid mixture, wherein the second liquid mixture has a higher
concentration of 4,4'-dichlorodiphenylsulfoxide compared to the
filtrate, [0094] IV) recycling at least a part of the second liquid
mixture obtained in step III) into step I), and [0095] V) drying
the filter residue obtained in step II) to obtain the crystal
composition (CC).
[0096] In a preferred embodiment the filter residue obtained in
step II) is washed with an organic solvent (os), preferably
monochlorobenzene, before drying according to step V). The washing
filtrate is preferably also recycled to the concentrating step
III).
[0097] The crystal (C) according to the present invention can be
produced by a process comprising the step: [0098] VI) separating a
crystal (C) out of the crystal composition (CC) obtained in step
V).
[0099] Another object of the present invention, therefore, is a
crystal composition (CC) obtained by a process comprising the
steps: [0100] I) cooling a first liquid mixture comprising
4,4'-dichlorodiphenylsulfoxide dissolved in an organic solvent (os)
to obtain a suspension comprising crystallized
4,4'-dichlorodiphenylsulfoxide and the organic solvent (os), [0101]
II) filtering the suspension obtained in step I) to obtain a
filtrate comprising 4,4'-dichlorodiphenylsulfoxide dissolved in the
organic solvent (os), wherein the filtrate has a lower
concentration of 4,4'-dichlorodiphenylsulfoxide compared to the
first liquid mixture, and a filter residue comprising the
crystallized 4,4'-dichlorodiphenylsulfoxide, [0102] III)
concentrating the filtrate obtained in step II) to obtain a second
liquid mixture, wherein the second liquid mixture has a higher
concentration of 4,4'-dichlorodiphenylsulfoxide compared to the
filtrate, [0103] IV) recycling at least a part of the second liquid
mixture obtained in step III) into step I), and [0104] V) drying
the filter residue obtained in step II) to obtain the crystal
composition (CC).
[0105] And yet another object of the present invention is a crystal
(C) obtained by a process comprising the step:
[0106] The organic solvent (os) used in the first liquid mixture
can be any solvent in which 4,4'-dichlorodiphenylsulfoxide (DCDSPO)
is sufficiently soluble in particular at a temperature suitable for
industrial scale production and from which crystallized DCDPSO can
be separated in a convenient manner. Such organic solvent (os) is
for example chlorobenzene, toluene, xylene, mesitylene, methanol or
a mixture of two or more of said solvents. The organic solvent (os)
preferably is chlorobenzene, particularly monochlorobenzene.
[0107] Optionally for reducing the solubility of DCDPSO in the
first liquid mixture and to improve the crystallization, it is
possible to additionally add at least one drowning-out agent, for
example at least one protic solvent like water, an alcohol, and/or
an acid, particularly a carboxylic acid, or at least one highly
unpolar solvent like a linear and/or cyclic alkane. With respect to
ease of workup water, methanol, ethanol, acetic acid and/or formic
acid, particularly water and/or methanol are preferred drowning-out
agents. [0108] VI) separating a crystal (C) out of the crystal
composition (CC) obtained in step V).
[0109] The crystal composition (CC) can be used for the production
of monomers, polymers and/or pharmaceuticals. If the crystal
composition (CC) is used as a starting product or intermediate for
the production of monomers, it is preferably used for the
production of 4,4'-dichlordiphenylsulfone. Therefore, the
4,4'-dichlordiphenylsulfoxide is generally reacted with an
oxidation agent in order to obtain the 4,4'-dichlordiphenylsulfone.
As an oxidation agent, any oxidation agent can be used wherein
organic peroxyacid is preferred.
[0110] In case the crystal composition (CC) is used as a starting
product or intermediate for the production of polymers, it is
preferably used for the production of polyarylene ether sulfone
polymers, wherein polysulfone (PSU), polyethersulfone (PESU) and/or
polybiphenylsulfone (PPSU) are particularly preferred.
[0111] If the crystal composition (CC) is used for the production
of the above-mentioned preferred polyarylene ether sulfone
polymers, it is typically reacted, as mentioned above, with an
oxidation agent to obtain 4,4'-dichlordiphenylsulfone. The
4,4'-dichlordiphenylsulfone is generally subsequently reacted with
an aromatic dihydroxymonomer in order to obtain the above-mentioned
polyarylene ether sulfone polymers.
[0112] For the production of polysulfone (PSU), the
4,4'-dichlordiphenylsulfone is generally reacted with bisphenol A
(4,4'-(propane-2,2-diyl)diphenol). In order to obtain
polyethersulfone (PESU), the 4,4'-dichlordiphenylsulfone is
generally reacted with 4,4'-dihydroxydiphenylsulfone. In order to
obtain polybiphenylsulfone (PPSU), the 4,4'-dichlordiphenylsulfone
is generally reacted with 4,4'-dihydroxybiphenyl.
[0113] Another object of the present invention, therefore, is the
use of the crystal composition (CC) as an intermediate for the
production of at least one product selected from the group
consisting of monomers, polymers and pharmaceuticals.
[0114] The invention is described in more detail by the examples
hereinafter without being restricted thereto.
EXAMPLES
Production of the Crystal Composition (CC)/the Crystal (C)
According to the Invention
[0115] For the production of 4,4'-dichlorodiphenylsulfoxide
(DCDPSO) 5.5 mol aluminum chloride and 40 mol monochlorobenzene
(MCB) were fed into a stirred tank reactor as a first reactor.
Subsequently 5 mol thionyl chloride were added into the first
reactor within 160 minutes. The reaction in the first reactor was
carried out at a temperature of 10.degree. C. The hydrogen chloride
produced during the reaction was withdrawn from the first reactor.
After finishing the addition of thionyl chloride the reaction
mixture in the first reactor was heated to 60.degree. C.
[0116] After completion of the reaction in the first reactor, the
resulting reaction mixture was fed into a stirred tank reactor as a
second reactor containing 3400 g aqueous hydrochloric acid with a
concentration of 11% by weight. The second reactor was heated to a
temperature of 90.degree. C. with stirring. After 30 minutes the
stirring was stopped and the mixture contained in the second
reactor separated into an aqueous phase and in organic phase. The
aqueous phase was withdrawn.
[0117] The organic phase was washed with 3000 g water while
stirring at 90.degree. C. After washing, the stirring was stopped
and the mixture separated into an aqueous phase and in organic
phase. The aqueous phase was removed. The organic phase was
subjected to a distillation.
[0118] Monchlorobenzene was distilled from said organic phase until
saturation is reached. The distillation was carried out at a
temperature of 88 to 90.degree. C. at a pressure of 200 mbar (abs).
The saturation was monitored via a turbidity probe.
[0119] Subsequently an evaporation cooling crystallization was
performed with the saturated organic phase containing
monochlorobenzene and 4,4'-dichlorodiphenylsulfoxide obtained in
the above described distillation (equals cooling step I) of the
present invention) until the temperature reached 20.degree. C.
Therefore, the organic phase was refluxed due to pressure reduction
and simultaneously cooled by the condensed liquid. The pressure at
the end of the evaporation cooling process is normally about 20
mbar (abs). After the evaporation cooling crystallization a
suspension was obtained comprising a crystallized
4,4'-dichlorodiphenylsulfoxide and monochlorobenzene.
[0120] According to step II) of the present invention the
suspension obtained in step I) was filtered to obtain a filtrate
comprising 4,4'-dichlorodiphenylsulfoxide dissolved in
monochlorobenzene and a filter residue comprising the crystallized
4,4'-dichlorodiphenylsulfoxide. The filter residue was washed with
monochlorobenzene and subsequently dried at 100.degree. C. and 100
mbar (abs) in order to obtain the crystal composition (CC) (equals
step V) of the present invention).
[0121] According to step III) the washing filtrate and the filtrate
obtained in step II) were subjected to a distillation. In the
distillation monochlorobenzene was removed until the amount of
combined filtrate and washing filtrate was reduced to 25% by
weight. The distillation was operated at 90.degree. C. sump
temperature and 200 mbar (abs). The distilled monochlorobenzene was
reused in the next batch as starting material. 80% by weight of the
obtained bottom product (equals second liquid mixture according to
step III) of the present invention) were recycled into the
crystallization step of the next batch (equals the cooling step I)
according to the present invention).
[0122] The crystal composition (CC) was obtained in a steady state
yield of 1232 g per batch which corresponds to a yield of
91.3%.
[0123] 4,4'-dichlorodiphenylsulfoxide obtained from commercial
suppliers: [0124] abcr-DCDPSO: 4,4'-dichlorodiphenylsulfoxide
obtained from abcr GmbH [0125] Alfa-DCDPSO:
4,4'-dichlorodiphenylsulfoxide obtained from Alfa-Aesar [0126]
TCI-DCDPSO: 4,4'-dichlorodiphenylsulfoxide obtained from TCI GmbH
[0127] Recryst-DCDPSO: 4,4'-dichlorodiphenylsulfoxide
recrystallized from diethylether [0128] Recryst-DCDPSO; CHCl.sub.3:
4,4'-dichlorodiphenylsulfoxide recrystallized from chloroform
[0129] Recryst-DCDPSO; EA: 4,4'-dichlorodiphenylsulfoxide
recrystallized from ethyl acetate
[0130] Analytical Methods
[0131] The d10,.sub.3-values, the d50,.sub.3-values and the
d90,.sub.3-values are determined as described above using a
Camsizer.RTM.XT with a measuring method x.sub.area.
[0132] GC analysis was performed to determine any organic impurity,
solvent and the purity of the 4,4'-dichlorodiphenylsulfoxide.
Samples were diluted in dimethylformamide (DMF) and the internal
standard tridecane was added to quantify the components based on
calibration curves. GC analysis was performed using a RTx5 Amine
column (0.25 .mu.m) from Restek.RTM. using the following
temperature ramp: holding 50.degree. C. for 2 minutes, heating
15.degree. C. per minute until 250.degree. C. is reached, holding
250.degree. C. for 15 minutes.
[0133] APHA numbers were measured (as described above) on a Hach
Lange LICO 500 instrument; 2.5 g 4,4'- dichlorodiphenylsulfoxide
were dissolved in 20 mL N-methyl-2-pyrrolidone (NMP) and measured
against pure NMP.
[0134] Determination of the aluminum content was done by generating
a saturated solution of 4,4'-dichlorodiphenylsulfoxide in
dimethylformamide to generate a homogeneous solution. Subsequently,
a sample of said saturated solution was taken and the weight was
determined (100 to 200 mg +/-0.1 mg). Afterwards, the following
decomposition process was conducted. 8 ml of concentrated sulfuric
acid (96% w/w) were added to the sample and heated to 320.degree.
C. Subsequently, 7 ml of a mixed acid (H.sub.2SO.sub.4 96% w/w;
HClO.sub.4 70% w/w; HNO.sub.3 65% w/w in a volume ratio 2:1:1) were
added and the sample as then heated to 160.degree. C. Thereafter,
the excess acid was evaporated. Subsequently 12 ml of hydrochloric
acid (HCl 36% w/w) were added and the mixture was heated to reflux
to obtain a solution. The exact volume of said solution was
determined by back weighting and correction with the density.
Thereafter, the aluminum content of the solution was measured by
inductively coupled optical plasma emission spectroscopy.
(Instrument IPC-OES Agilent 5100; wave length Al 394, 401 nm;
internal standard SC 361.383 nm)
[0135] Bulk density and tapered density were determined as
described above.
[0136] The flowability (ff.sub.c) was determined on a Ring Shear
Tester RST-XS according to Jenike as described in Dr.-Ing. Dietmar
Schulze "The automatic Ring Shear Tester RST-01.pc"and ASTM-D 6773
at an initial shear stress of 3 kPa.
[0137] According to Jenike the flowability is classified according
the following table:
TABLE-US-00003 ff.sub.c Flowability <1 Not flowing 1< to
<2 Very poor 2< to <4 Poor 4< to <10 Good 10<
Excellent
[0138] The melting point was determined by DSC (Differential
Scanning Calorimetry) on a Mettler Toledo DSC3 using a heating rate
of 2.5 K/min (30 to 410.degree. C.).
[0139] The results are shown in the below table.
TABLE-US-00004 Tapered bulk den- AI Particle Bulk sity (1250 Haus-
Flow- Melting Purity Impurities MCB content size APHA density
lifts) ner ability point Color [wt.-%] [wt.-%] [wt.-%] [ppm]
[.mu.m] number [kg/m.sup.3] [kg/m.sup.3] ratio [ttc] [.degree. C.]
abcr- yellow 99.1 4,4'-dichlorodi- n.d. 960 d10,.sub.3 = 17
>4000 n.d. n.d. n.d. 6.5 .+-. 141.1- DCDPSO powder phenylsulfide
d50,.sub.3 = 31 0.4 142.5 0.17 d90,.sub.3 = 62 2,4'-dichlorodi-
TCl- white 99.1 2,4'-dichlorodi- n.d. <60 d10,.sub.3 = 53 472
n.d. n.d. n.d. 5.8 .+-. 141.9- DCDPSO crytals phenylsulfoxide
d50,.sub.3 = 491 0.6 143.6 0.20 d90,.sub.3 = 1063 Alfa- white 97.4
4,4'-dichlorodi- 0.12 <60 d10,.sub.3 = 46 1420 n.d. n.d. n.d.
n.d. 140.9- DCDPSO powder phenylsulfide d50,.sub.3 = 328 143.1 0.26
d903 = 1097 2,4'-dichlorodi- phenylsulfoxide Recryst- white 99.9
2,4'-dichlorodi- n.d. <50 d10,.sub.3 = 29 68. n.d. n.d. n.d. 6.6
.+-. 143.3- DCDPSO powder phenylsulfoxide d50,.sub.3 = 55 0.4 144.6
0.1. d90,.sub.3 = 1415 CC- white 98.8 4,4'-dichlorodi- 0.50 <50
d10,.sub.3 = 231 72 763 874 1.13 9.6 .+-. 141.2- DCDPSO crystals
phenylsulfide 0.2 d50,.sub.3 = 497 0.4 144.9 according
2,4'-dichlorodi- d90,.sub.3 = 863 to the phenylsulfoxide invention
0.3 Recryst- white n.d. n.d. n.d. n.d. n.d. n.d. n.d. n.d. n.d. n.d
142.8- DCDPSO crystals 144.1 CHCl.sub.3 Recryst- white n.d. n.d.
n.d. n.d. n.d. n.d. n.d. n.d. n.d. n.d 141.9- DCDPSO crystals 143.6
EA indicates data missing or illegible when filed
FIGURES AND REFERENCE SIGN LIST
[0140] FIG. 1A shows the net of a prism with a symmetrical
six-sided base surface bsu and a symmetrical six-sided top surface
tsu and six side surfaces ssu1 to ssu6
[0141] FIG. 1B shows the top view of the top surface tsu of an
asymmetrical prism with a six-sided top surface tsu
[0142] FIG. 1C shows the first side surface ssu of an asymmetrical
six-sided prism
[0143] FIG. 1D shows one embodiment of the geometry of the outer
surface of the crystal C according to the invention
[0144] FIG. 2A shows another embodiment of the geometry of the
outer surface of the crystal C according to the invention
[0145] FIG. 2B shows a photo taken with a light microscope of the
geometry of the outer surface of the crystal C according to the
invention with marked up edges and reference signs
[0146] FIG. 3A shows a photo taken with a light microscope of the
crystal composition CC showing crystals C (500 .mu.m)
[0147] FIG. 3B shows a photo taken with a light microscope of the
crystal composition CC showing crystals C (200 .mu.m)
[0148] FIG. 4A shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form obtained
from abcr GmbH (500 .mu.m)
[0149] FIG. 4B shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form obtained
from abcr GmbH (200 .mu.m)
[0150] FIG. 5 shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form obtained
from Alfa Aesar (500 .mu.m)
[0151] FIG. 6A shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form obtained
from TCI GmbH (500 .mu.m)
[0152] FIG. 6B shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form obtained
from TCI GmbH (1 mm)
[0153] FIG. 7A shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form
recrystallized from diethyl ether (500 .mu.m)
[0154] FIG. 7B shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form
recrystallized form diethylether (200 .mu.m)
[0155] FIG. 8A illustrates the measurement of X.sub.c min
[0156] FIG. 8B illustrates the measurement of X.sub.Fe max
[0157] FIG. 9A shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form
recrystallized from chloroform (200 .mu.m)
[0158] FIG. 9B shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form
recrystallized from chloroform (500 .mu.m)
[0159] FIG. 10 shows a photo taken with a light microscope of
4,4'-dichlorodiphenylsulfoxide in particulate powder form
recrystallized from ethyl acetate (500 .mu.m)
[0160] C crystal [0161] bsu six-sided base surface of the crystal
(C) [0162] bsi1 first side of the six-sided base surface bsu [0163]
bsi2 second side of the six-sided base surface bsu [0164] bsi3
third side of the six-sided base surface bsu [0165] bsi4 fourth
side of the six-sided base surface bsu [0166] bsi5 fifth side of
the six-sided base surface bsu [0167] bsi6 sixth side of the
six-sided base surface bsu [0168] cb1 first corner of the six-sided
base surface bsu [0169] cb2 second corner of the six-sided base
surface bsu [0170] cb3 third corner of the six-sided base surface
bsu [0171] cb4 fourth corner of the six-sided base surface bsu
[0172] cb5 fifth corner of the six-sided base surface bsu [0173]
cb6 sixth corner of the six-sided base surface bsu [0174] db
diameter of the six-sided base surface bsu [0175] db14 shortest
distance between the first corner cb1 and the fourth corner cb4
[0176] db25 shortest distance between the second corner cb2 and the
[0177] fifth corner cb5 [0178] db36 shortest distance between the
third corner cb3 and the sixth corner cb6 [0179] tsu six-sided top
surface of the crystal C [0180] tsi1 first side of the six-sided
top surface tsu [0181] tsi2 second side of the six-sided top
surface tsu [0182] tsi3 third side of the six-sided top surface tsu
[0183] tsi4 fourth side of the six-sided top surface tsu [0184]
tsi5 fifth side of the six-sided top surface tsu [0185] tsi6 sixth
side of the six-sided top surface tsu [0186] ct1 first corner of
the six-sided top surface tsu [0187] ct2 second corner of the
six-sided top surface tsu [0188] ct3 third corner of the six-sided
top surface tsu [0189] ct4 fourth corner of the six-sided top
surface tsu [0190] ct5 fifth corner of the six-sided top surface
tsu [0191] ct6 sixth corner of the six-sided top surface tsu [0192]
dt diameter of the six-sided top surface tsu [0193] dt14 shortest
distance between the first corner ct1 and the fourth corner ct4
[0194] dt25 shortest distance between the second corner ct2 and the
fifth corner ct5 [0195] dt36 shortest distance between the third
corner ct3 and the sixth corner ct6 [0196] ssu1 first side surface
of the crystal (C) [0197] ssu2 second side surface of the crystal
(C) [0198] ssu3 third side surface of the crystal (C) [0199] ssu4
fourth side surface of the crystal (C) [0200] ssu5 fifth side
surface of the crystal (C) [0201] ssu6 sixth side surface of the
crystal (C) [0202] I1 length of the first side surface (ssu1)
[0203] I2 length of the second side surface (ssu2) [0204] I3 length
of the third side surface (ssu3) [0205] I4 length of the fourth
side surface (ssu4) [0206] I5 length of the fifth side surface
(ssu5) [0207] I6 length of the sixth side surface (ssu6) [0208] I11
shortest distance between the first corner ct1 and the first corner
bt1 [0209] I22 shortest distance between the second corner ct2 and
the second corner bt2 [0210] I33 shortest distance between the
third corner ct3 and the third corner bt3 [0211] I44 shortest
distance between the fourth corner ct4 and the fourth corner bt4
[0212] I55 shortest distance between the fifth corner ct5 and the
fifth corner bt5 [0213] I66 shortest distance between the sixth
corner ct6 and the sixth corner bt6
* * * * *
References