U.S. patent application number 17/426836 was filed with the patent office on 2022-04-14 for electronic device.
This patent application is currently assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION. The applicant listed for this patent is SONY SEMICONDUCTOR SOLUTIONS CORPORATION. Invention is credited to Takashi IMAHIGASHI, Masashi MIYAZAKI, Kaoru TANAKA.
Application Number | 20220115834 17/426836 |
Document ID | / |
Family ID | 1000006089171 |
Filed Date | 2022-04-14 |
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United States Patent
Application |
20220115834 |
Kind Code |
A1 |
IMAHIGASHI; Takashi ; et
al. |
April 14, 2022 |
ELECTRONIC DEVICE
Abstract
An electronic device according to a present disclosure includes
a semiconductor substrate, a chip, and a connection part. The chip
has a different thermal expansion rate from that of the
semiconductor substrate. The connection part includes a porous
metal layer for connecting connection pads that are arranged on
opposing principle surfaces of the semiconductor substrate and the
chip.
Inventors: |
IMAHIGASHI; Takashi;
(Kumamoto, JP) ; TANAKA; Kaoru; (Kumamoto, JP)
; MIYAZAKI; Masashi; (Kumamoto, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
Kanagawa |
|
JP |
|
|
Assignee: |
SONY SEMICONDUCTOR SOLUTIONS
CORPORATION
Kanagawa
JP
|
Family ID: |
1000006089171 |
Appl. No.: |
17/426836 |
Filed: |
February 3, 2020 |
PCT Filed: |
February 3, 2020 |
PCT NO: |
PCT/JP2020/003917 |
371 Date: |
July 29, 2021 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01S 5/0234 20210101;
H01S 5/423 20130101 |
International
Class: |
H01S 5/0234 20060101
H01S005/0234; H01S 5/42 20060101 H01S005/42 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 4, 2019 |
JP |
2019-018088 |
Sep 25, 2019 |
JP |
2019-174039 |
Claims
1. An electronic device comprising: a semiconductor substrate; a
chip having a different thermal expansion rate from a thermal
expansion rate of the semiconductor substrate; and a connection
part including a porous metal layer for connecting connection pads
that are arranged on opposing principle surfaces of the
semiconductor substrate and the chip.
2. The electronic device according to claim 1, wherein a difference
between the thermal expansion rates of the chip and the
semiconductor substrate is 0.1 ppm/.degree. C. or greater.
3. The electronic device according to claim 1, wherein the chip is
a semiconductor laser, and the semiconductor substrate includes a
drive circuit that drives the semiconductor laser.
4. The electronic device according to claim 1, wherein the chip is
a semiconductor laser, and the semiconductor substrate includes a
temperature sensor.
5. The electronic device according to claim 3, wherein the
semiconductor laser includes a plurality of light emitting elements
two-dimensionally arrayed, each of which emits laser light, and the
light emitting elements each have an electrode serving as anode and
an electrode serving as cathode provided on a same plane.
6. The electronic device according to claim 5, wherein the
semiconductor substrate includes a switch, and the switch is
connected with the electrode serving as anode or the electrode
serving as cathode.
7. The electronic device according to claim 6, wherein the switch
is connected with a corresponding group of the light emitting
elements, and the light emitting elements are subjected to light
emission control for the corresponding group.
8. The electronic device according to claim 6, wherein a plurality
of the switches are connected with the respective light emitting
elements, and the light emitting elements are subjected to light
emission control individually.
9. The electronic device according to claim 6, wherein each of the
electrodes serving as anode or each of the electrodes serving as
cathode and each of the switches are connected with the connection
part.
10. The electronic device according to claim 5, wherein the light
emitting elements are formed on a common substrate.
11. The electronic device according to claim 5, wherein the light
emitting elements have a vertical cavity surface emitting laser
(VCSEL) structure.
12. The electronic device according to claim 1, wherein insulating
resin is filled between the semiconductor substrate and the chip
and between the connection parts.
13. The electronic device according to claim 1, wherein the porous
metal layer includes a metal particle with a particle diameter of
0.005 .mu.m to 1.0 .mu.m.
14. The electronic device according to claim 1, wherein the
connection part includes a metal film having a same component as a
component of the porous metal layer at least between the porous
metal layer and the connection pad on the semiconductor substrate
side or between the porous metal layer and the connection pad on
the chip side.
15. The electronic device according to claim 14, wherein the metal
film is formed such that a ratio of a film thickness to a thickness
of the connection part in a direction perpendicular to the
principle surface is set to be 10% or smaller.
16. The electronic device according to claim 15, wherein the metal
film is formed such that the ratio of the film thickness to the
thickness of the connection part in the direction perpendicular to
the principle surface is set to be less than 5%.
17. The electronic device according to claim 14, wherein the metal
film is formed such that a ratio of a film thickness to a half of a
thickness of the connection part in a direction perpendicular to
the principle surface is set to be 10% or smaller.
18. The electronic device according to claim 17, wherein the metal
film is formed such that the ratio of the film thickness to a half
of the thickness of the connection part in the direction
perpendicular to the principle surface is set to be less than
5%.
19. The electronic device according to claim 1, wherein a height
ratio between the porous metal layer and the connection part in the
direction perpendicular to the principle surface is larger than
90%.
20. An electronic device, comprising: a semiconductor substrate;
and a bump including a metal film and a porous metal layer that are
sequentially deposited on a surfaces of a connection pad that is
arranged on a principle surface of the semiconductor substrate,
wherein the metal film is formed such that a ratio of a film
thickness to a thickness of the bump in a direction perpendicular
to the principle surface is set to be 10% or smaller.
21. The electronic device according to claim 20, wherein the
semiconductor substrate includes a drive circuit that drives the
semiconductor laser mounted on the semiconductor substrate by flip
chip mounting, and the drive circuit controls a plurality of light
emitting elements included in the semiconductor laser in an
independent manner by controlling switches correspondingly
connecting the light emitting elements and a current supply
source.
22. An electronic device comprising: a chip and a bump including a
metal film and a porous metal layer that are sequentially deposited
on a surfaces of a connection pad that is arranged on a principle
surface of the chip, wherein the metal film is formed such that a
ratio of a film thickness to a thickness of the bump in a direction
perpendicular to the principle surface is set to be 10% or
smaller.
23. The electronic device according to claim 22, wherein the chip
is a semiconductor laser, the semiconductor laser includes a
plurality of light emitting elements two-dimensionally arrayed,
each of which emits laser light, and the light emitting elements
each have an electrode serving as anode and an electrode serving as
cathode provided on a same plane.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims priority of Japanese Patent
Application No. 2019-018088 filed in Japan on Feb. 4, 2019; and
Japanese Patent Application No. 2019-174039 filed in Japan on Sep.
25, 2019.
FIELD
[0002] The present disclosure relates to an electronic device.
BACKGROUND
[0003] As a technology for mounting an electronic component chip on
a semiconductor substrate, for example, flip chip mounting of
bringing a metal bump, which is arranged in a protruding manner on
an upper surface of the semiconductor substrate, and a connection
pad, which is arranged on a lower surface of the chip, into
pressure contact with each other and simultaneously applying heat
to thereby connect the metal bump and the chip has been known (for
example, see Japanese Laid-open Patent Publication No.
2011-077308). As a material of the bump, in general, gold, copper,
solder, and the like in bulk states are used.
CITATION LIST
Patent Literature
[0004] PTL 1: JP 2011-077308 A
SUMMARY
Technical Problem
[0005] However, if gold or copper in a bulk state is used as the
material of the bump and a chip having a different thermal
expansion rate from that of a semiconductor substrate is to be
mounted on the semiconductor substrate by the flip chip mounting,
it is necessary to connect the bump at high temperature and high
pressure, so that the chip is damaged and reliability of the
electronic device is reduced.
[0006] Further, if solder is used as the material of the bump, it
is possible to connect the semiconductor substrate and the chip at
relatively low temperature and low pressure, but a connection
strength is lower than that of a bump made of gold or copper;
therefore, if the semiconductor substrate and the chip have
different thermal expansion rates, the reliability is reduced due
to the connection strength.
Solution to Problem
[0007] Various aspects and features of the invention are defined in
the appended claims. An electronic device according to a present
disclosure includes a semiconductor substrate, a chip, and a
connection part. The chip has a different thermal expansion rate
from that of the semiconductor substrate. The connection part
includes a porous metal layer for connecting connection pads that
are arranged on opposing principle surfaces of the semiconductor
substrate and the chip.
BRIEF DESCRIPTION OF DRAWINGS
[0008] The above and other objects, features, advantages and
technical and industrial significance of this invention will be
better understood by reading the following detailed description,
when considered in connection with the accompanying drawings.
[0009] FIG. 1 is a diagram for explaining a cross section of an
electronic device according to a present disclosure.
[0010] FIG. 2A is a diagram for explaining a process of forming
bumps on a semiconductor substrate according to the present
disclosure.
[0011] FIG. 2B is a diagram for explaining the process of forming
the bumps on the semiconductor substrate according to the present
disclosure.
[0012] FIG. 2C is a diagram for explaining the process of forming
the bumps on the semiconductor substrate according to the present
disclosure.
[0013] FIG. 2D is a diagram for explaining the process of forming
the bumps on the semiconductor substrate according to the present
disclosure.
[0014] FIG. 3A is a diagram for explaining a process of forming
bumps on a chip according to the present disclosure.
[0015] FIG. 3B is a diagram for explaining the process of forming
the bumps on the chip according to the present disclosure.
[0016] FIG. 3C is a diagram for explaining the process of forming
the bumps on the chip according to the present disclosure.
[0017] FIG. 3D is a diagram for explaining the process of forming
the bumps on the chip according to the present disclosure.
[0018] FIG. 4 is a block diagram illustrating an example of a
configuration of a distance measuring apparatus according to the
present disclosure.
[0019] FIG. 5 is a diagram for explaining an example of arrangement
of constituent elements of the measuring apparatus according to the
present disclosure.
[0020] FIG. 6 is a circuit diagram illustrating an equivalent model
of a drive circuit according to the present disclosure.
[0021] FIG. 7 is a diagram for explaining a rise time and a fall
time of current flowing in a light emitting element according to
the present disclosure.
[0022] FIG. 8 is a diagram for explaining a cross section structure
of a light source apparatus according to the present
disclosure.
[0023] FIG. 9A is a diagram for explaining an assembly process of
the light source apparatus according to the present disclosure.
[0024] FIG. 9B is a diagram for explaining an assembly process of
the light source apparatus according to the present disclosure.
[0025] FIG. 9C is a diagram for explaining an assembly process of
the light source apparatus according to the present disclosure.
DESCRIPTION OF EMBODIMENTS
[0026] Embodiments of the present disclosure will be described in
detail below based on the drawings. In each of the embodiments
below, the same components are denoted by the same reference
symbols and indicated by the same hatching, and the same
explanation will not be repeated.
[0027] 1. Configuration of Cross Section of Electronic Device
[0028] As illustrated in FIG. 1, an electronic device 1 according
to the present disclosure includes a semiconductor substrate 2, a
chip 3, and connection parts (for example, hereinafter, described
as bumps 4) for connecting connection pads 21 and 31 that are
arranged on opposing principle surfaces of the semiconductor
substrate 2 and the chip 3. In the following, exemplary details
with respect to the semiconductor substrate 2, the chip 3, and the
connecting connection pads 21 and 31 will be given. However, other
embodiments may include other exemplary details.
[0029] The chip 3 may be, for example, a semiconductor laser and
may include the connection pads 31, light emitting parts 32 of the
semiconductor laser, and the like inside a base material made of,
for example, a semiconductor material or a semiconductor compound
material, for example gallium arsenide (GaAs). The light emitting
section 32 may include a plurality of light emitting elements 321,
each of which emits laser light. For example, the plurality of
light emitting elements 321 may be two-dimensionally arranged. The
electronic components formed in the base material of the chip 3 may
be arbitrary electronic components other than the light emitting
parts 32 of the semiconductor laser. Further, the base material of
the chip 3 may be a semi-insulating base material made of, for
example, indium phosphide (InP) or the like.
[0030] The semiconductor substrate 2 may be, for example, a silicon
(Si) substrate, and a drive circuit 22 that drives the
semiconductor laser may be formed inside the semiconductor
substrate 2. The electronic circuit formed inside the semiconductor
substrate 2 may be an arbitrary electronic circuit other than the
drive circuit 22 of the semiconductor laser.
[0031] The electronic device 1 may be configured such that the chip
3 is mounted on the semiconductor substrate 2 by flip chip
mounting, and the bumps 4 electrically connect the drive circuit 22
inside the semiconductor substrate 2 and the chip 3 as the
semiconductor laser.
[0032] In general flip chip mounting, a chip is mounted on a
semiconductor substrate by bringing a bulk-state metal bump, such
as gold (Au), copper (Cu), or solder, arranged on an opposing
principle surface of the semiconductor substrate or the chip into
pressure contact with the semiconductor substrate or the chip and
applying heat simultaneously.
[0033] However, when a difference between thermal expansion rates
of the semiconductor substrate and the chip is, for example, 0.1
ppm/.degree. C. or greater, and if Au, Cu, solder, or the like in a
bulk state is used as the material of the bump, the following
problems may occur.
[0034] For example, if Au in a bulk state is used as the material
of the bump, to stably connect the semiconductor substrate and the
chip having different thermal expansion rates using the bump, it is
necessary to apply heat at high temperature of 300.degree. C. or
higher and apply high pressure of 100 MPa or higher between the
semiconductor substrate and the chip.
[0035] Further, if Cu in a bulk state is used as the material of
the bump, it is necessary to apply heat at temperature of
380.degree. C. or higher. In this manner, when Au or Cu in a bulk
state is used as the material of the bump, it is necessary to
connect the bump at high temperature and high pressure, and the
high temperature and the high pressure may damage the chip, so that
the reliability of the electronic device may be reduced.
[0036] In contrast, if solder is used as the material of the bump,
it is possible to connect the bump at lower temperature and lower
pressure as compared to using Au and Cu; however, solder has lower
heat resistance and connection strength than those of Au and Cu.
Therefore, as for the bump made of solder, for example, if the chip
expands due to heat generated by the electronic component, such as
the semiconductor laser, mounted on the chip, an open fault occurs
due to a difference between the thermal expansion rates of the
semiconductor substrate and the chip, so that the reliability of
the electronic device may be reduced.
[0037] As described above, the semiconductor substrate 2 according
to the present disclosure may be the Si substrate having a thermal
expansion rate of 5.7 ppm/.degree. C. In contrast, the base
material of the chip 3 according to the present disclosure may be
GaAs having a thermal expansion rate of 2.6 ppm/.degree. C.
[0038] Therefore, in the electronic device 1, a difference between
the thermal expansion rates of the semiconductor substrate 2 and
the chip 3 may be far greater than 0.1 ppm/.degree. C. Therefore,
if the material of the bump is Au, Cu, or solder in a bulk state in
the electronic device 1, the above-described problems may occur and
the reliability may be reduced.
[0039] To cope with this, the bumps 4 of the electronic device 1
may include, for example, porous metal layers 41 made of, for
example, Au. The porous metal layers 41 may include Au particles
with particle diameters of 0.005 micrometer (m) to 1.003 .mu.m.
Meanwhile, a component of the porous metal layers 41 may be, for
example, Cu, silver (Ag), or platinum (Pt).
[0040] The porous metal layers 41 may include the metal particles
with the particle diameters of 0.005 .mu.m to 1.0 .mu.m. This may
allow to bond metals at lower temperature than a melting point of a
bulk-state metal due to a size effect of the particle diameters.
For example, the porous metal layers 41 are able to connect the
semiconductor substrate 2 and the chip 3 at about 100.degree. C.
when composed of Au, at about 250.degree. C. when composed of Ag,
and at about 150.degree. C. when composed of Cu. Therefore, the
electronic device 1 is able to reduce damage of the chip 3 due to
heat and improve the reliability.
[0041] For example, a height ratio between the porous metal layer
41 and the bumps 4, e.g. a ratio between a thickness or vertical
extension of the porous metal layer 41 and a thickness or vertical
extension of the bumps 4 may be equal to or larger than 90%, or
equal to or larger than 95%. The vertical extension is an extension
along a vertical direction which may be a direction of stacking of
the semiconductor substrate 2 and the chip 3, e.g. a direction
perpendicular to the principle surface of the semiconductor
substrate 2 or the chip 3. In addition to the porous metal layer
41, the bumps 4 may include one or metal layers being non-porous or
having a smaller porosity, e.g. volume fraction of pores, than the
porous metal layer 41. Examples of metal layers are described
further below with respect to the metal films 42, 43, for example.
Further, the porous metal layers 41 may have elasticity and are
elastically deformed even when, for example, the chip 3 expands at
a different thermal expansion rate from that of the semiconductor
substrate 2 due to heat generated by the semiconductor laser, so
that the above height ratio between the porous metal layer 41 and
the bumps 4 allows for preventing occurrence of an open fault.
Therefore, the electronic device 1 having the above height ratio
between the porous metal layer 41 and the bumps 4 is able to
improve the reliability as compared to a case where, for example, a
bump made of solder is used.
[0042] The electronic device 1 as described above may be
manufactured by depositing the chip 3 on the semiconductor
substrate 2 having an upper surface on which the bumps 4 are
arranged, connecting the porous metal layers 41 of the bumps 4 to
the connection pads 31 without melting the porous metal layers 41,
and mounting the chip 3 on the semiconductor substrate 2, for
example, by flip chip mounting.
[0043] Further, the electronic device 1 may be manufactured by
depositing, on the semiconductor substrate 2, the chip 3 having a
lower surface on which bumps including the porous metal layers 41
are arranged, connecting the porous metal layers 41 of the bumps to
the connection pads 21 without melting the porous metal layers 41,
and mounting the chip 3 on the semiconductor substrate 2, for
example, by flip chip mounting. Meanwhile, the bumps may be
arranged on each of the semiconductor substrate 2 and the chip 3
before deposition.
[0044] If the bumps 4 are arranged on the semiconductor substrate 2
side, metal films 42 may be arranged between the porous metal
layers 41 and the connection pads 21 on the semiconductor substrate
2 side. Further, if the bumps are arranged on the chip 3 side,
metal films may be arranged between the porous metal layers 41 and
the connection pads 31 on the chip 3 side.
[0045] In the present disclosure, by setting a ratio of film
thicknesses of the metal films 42 to thicknesses of the bumps 4 in
a direction perpendicular to the principle surface of the
semiconductor substrate 2 to 10% or smaller, fine pitch can be
realized such that a pitch between the bumps 4 is set to be 20
.mu.m or smaller. The fine pitch will be described below in
combination with a process of forming the bumps 4.
[0046] 2. Process of Forming Bumps
[0047] The process of forming the bumps according to the present
disclosure will be described below with reference to FIG. 2A to
FIG. 3D. FIG. 2A to FIG. 2D are diagrams for explaining the process
of forming the bumps 4 on the semiconductor substrate 2 according
to examples of the present disclosure. FIG. 3A to FIG. 3D are
diagrams for explaining a process of forming bumps 4a (see FIG. 3D)
on the chip 3 according to the present disclosure.
[0048] As illustrated in FIG. 2A, when the bumps 4 are to be formed
on the semiconductor substrate 2, first, a photoresist layer 51 may
be formed on a surface where the connection pads 21 are arranged on
the semiconductor substrate 2. Thereafter, through holes may be
formed using a photolithography technique at positions at which the
bumps 4 are to be formed on the photoresist layer 51, so that
surfaces of the connection pads 21 are exposed.
[0049] At this time, the through holes may be formed such that an
interval between centers of the adjacent through holes is set to
be, for example, 20 .mu.m (20-.mu.m pitch). The through holes may
be filled with paste 40 including metal particles as a material of
the porous metal layers 41 in a subsequent process; however, due to
a fine structure using the exemplary 20-.mu.m pitch, if the through
holes are filled with the paste 40 in this state, the fine
structure may be damaged and collapsed.
[0050] Therefore, as illustrated in FIG. 2B, the metal films 42 may
be formed by, for example, sputtering, on upper surfaces of the
photoresist layer 51 and the connection pads 21. As a material of
the metal films 42, a metal having the same component as the metal
particles included in the paste 40 that is to be poured into the
through holes may be selected. In this example, the metal films 42
made of Au are formed.
[0051] Accordingly, the surface of the photoresist layer 51 may be
coated with the metal films 42 and become hardened, so that when
the through holes are filled with the paste 40 including the metal
particles, it is possible to prevent the fine structure from
collapsing.
[0052] Further, if the film thicknesses of the metal films 42
formed at this time are too thick, openings of the through holes
may narrow down and it becomes difficult to fill the through holes
with the paste 40 including the metal particles. Therefore, in this
example, the thin metal films 42 are formed such that a ratio of
the film thicknesses of the metal films 42 to depths D of the
through holes, in other words, the thicknesses of the to-be-formed
bumps 4 in the direction perpendicular to the principle surface of
the semiconductor substrate 2 (depths D of the bumps 4) is set to
be 10% or smaller.
[0053] For example, when the bumps 4 with heights of 10 .mu.m are
to be formed at a 20-.mu.m pitch, the film thicknesses of the metal
films 42 are set to 0.2 .mu.m. With this configuration, it is
possible to prevent the openings of the through holes from
narrowing down even when the metal films 42 are formed, so that it
is possible to fully fill the thorough holes with the paste 40
including the metal particles in a subsequent process.
[0054] Subsequently, as illustrated in FIG. 2C, the through holes
formed on the photoresist layer 51 may be filled with the paste 40.
The paste 40 may have a purity of 99.9 weight percent or higher and
may include particles, for example Au particles, with particle
diameters of 0.005 .mu.m to 1.0 .mu.m, for example. As a method of
filling the through holes with the paste 40, an arbitrary method
may be used, such as screen printing or a method of spreading the
dropped paste 40 with a spatula, for example.
[0055] Then, the paste 40 may be dried and sintered, and thereafter
the photoresist layer 51 may be stripped using stripping solution
or the like. Consequently, as illustrated in FIG. 2D, the bumps 4
having, for example, two-layer structures, in which the metal films
42 made of Au and the porous metal layers 41 including the Au
particles with the particle diameters of 0.005 .mu.m to 1.0 .mu.m
are sequentially deposited, are formed on the surfaces of the
connection pads 21.
[0056] As described in the example above, the bumps 4 may include
the metal films 42 such that the ratio of the film thicknesses to
the heights of the bumps 4 is set to be 10% or smaller. The metal
films 42 as described above are formed on the surfaces of the
photoresist layer 51 and the connection pads 21 so as to prevent
collapse of fine structures of the bumps 4 that are patterned on
the photoresist layer 51. With this configuration, it is possible
to realize fine pitch of the bumps 4 such that the pitch is set to
be 20 .mu.m or smaller.
[0057] Further, the metal films 42 may be formed on the surfaces of
the connection pads 21 by sputtering, and therefore, even if the
connection pads 21 are made of metal with a different component
from that of the metal films 42, the metal films 42 can be firmly
bonded with the connection pads 21.
[0058] The metal films 42 may be made of a component that is
different metal from that of the porous metal layers 41 deposited
on the surface, but when the metal films 42 are made of the same
component as that of the porous metal layers 41, for example Au,
the porous metal layers 41 can be bonded with the metal films 42
with a stronger bonding force than when the porous metal layers 41
are deposited on a metal film the component of which differs from
that of the porous metal layers 41. It should be noted that when
the bump 4 is made of a component other than Au (for example, Cu,
Ag (silver), or Pt (platinum), the metal films 42 can also be made
of a component other than Au (for example, Cu, Ag (silver), or Pt
(platinum)).
[0059] The process of forming the bumps 4a as illustrated in FIG.
3D on the chip 3 will be described below. As illustrated in FIG.
3A, when the bumps 4a are to be formed on the chip 3, first, a
photoresist layer 52 may be formed on a surface where the
connection pads 31 are formed on the chip 3. Thereafter, through
holes may be formed, for example, by using a photolithography
technique at positions at which the bumps 4a are to be formed on
the photoresist layer 52, so that surfaces of the connection pad 31
are exposed.
[0060] Thereafter, as illustrated in FIG. 3B, metal films 43 may be
formed by, for example, sputtering, on upper surfaces of the
photoresist layer 52 and the connection pads 31. As a material of
the metal film 43, a material having the same component as the
particles included in the paste 40 that is to be poured into the
through holes is selected, for example Au.
[0061] Accordingly, the surface of the photoresist layer 52 may be
coated with the metal films 43 and become hardened, so that when
the through holes are filled with the paste 40 including the
particles, for example Au particles, it is possible to prevent the
fine structure from collapsing.
[0062] Further, even in this case, the thin metal films 43 may be
formed such that a ratio of the film thicknesses of the metal films
43 to depths D of the through holes, in other words, thicknesses of
the to-be-formed bumps 4a in a direction perpendicular to the
principle surface of the chip 3 (depths D of the bumps 4a) is set
to be 10% or smaller.
[0063] For example, similarly to the bumps 4 on the semiconductor
substrate 2 side, when the bumps with heights of 10 82 m are to be
formed at a 20-.mu.m pitch, the film thicknesses of the metal films
43 are set to 0.2 .mu.m. With this configuration, it is possible to
prevent the openings of the through holes from narrowing down even
when the metal films 43 are formed, so that it is possible to fully
fill the thorough holes with the paste 40 including the Au
particles in a subsequent process.
[0064] Subsequently, as illustrated in FIG. 3C, the through holes
formed on the photoresist layer 52 may be filled with the paste 40.
The paste may have a purity of 99.9weight percent or higher and may
include particles, for example Au particles with particle diameters
of 0.005 .mu.m to 1.0 .mu.m, for example.
[0065] Then, the paste 40 may be dried and sintered, and thereafter
the photoresist layer 52 may be stripped using stripping solution
or the like. Consequently, as illustrated in FIG. 3D, the bumps 4a
having, for example, two-layer structures, in which the metal films
43 made of Au and the porous metal layers 41 including the Au
particles with the particle diameters of 0.005 .mu.m to 1.0 .mu.m
are sequentially deposited, are formed on the surfaces of the
connection pads 31.
[0066] As described above, the bumps 4a may include the metal films
43 such that the ratio of the film thicknesses to the heights of
the bumps 4a is set to be 10% or smaller. With this configuration,
it is possible to realize fine pitch of the bumps 4a such that the
pitch is set to be 20 .mu.m or smaller, similarly to the bumps 4 on
the semiconductor substrate 2 side.
[0067] Further, similarly to the bumps 4 on the semiconductor
substrate 2 side, the bumps 4a are able to firmly bond the metal
films 43 and the connection pads 31, so that it is possible to
firmly bond the metal films 43 and the porous metal layers 41.
[0068] In the embodiment as described above, the cases are
described in which the chip 3 on which the bumps 4a are not
arranged is mounted on the semiconductor substrate 2 on which the
bumps 4 are arranged and in which the chip 3 on which the bumps 4a
are arranged is mounted on the semiconductor substrate 2 on which
the bumps 4 are arranged, but these cases are described by way of
example only.
[0069] The electronic device according to the present disclosure
may be configured such that the chip 3 on which the bumps 4a are
arranged is mounted on the semiconductor substrate 2 on which the
bumps 4 are arranged. In this configuration, the metal films 42 and
43 may be formed such that a ratio of the film thicknesses to
halves of thicknesses of laminated bodies of the bumps 4 and the
bumps 4a serving as connection parts for connecting the
semiconductor substrate 2 and the chip 3 in a direction
perpendicular to the principle surfaces of the semiconductor
substrate 2 and the chip 3 is set to be 10% or smaller, preferably
less than 5%.
[0070] Further, in the embodiment as described above, the case has
been described in which the base material of the chip 3 is a base
material other than Si, but the base material of the chip 3 may be
Si doped with impurities as long as a thermal expansion rate of the
base material is different from that of the semiconductor substrate
2.
[0071] The above-described chip 3 including the light emitting
section 32 of the semiconductor laser and the semiconductor
substrate 2 including the drive circuit 22 of the semiconductor
laser may be mounted on a distance measuring apparatus such as a
ToF sensor and structured light, for example. The light emitting
section 32 of the semiconductor laser that is mounted on a distance
measuring apparatus functions as a light source of the ToF sensor
or the structured light, for example.
[0072] Next, with reference to FIG. 4, a distance measuring
apparatus having the electronic device 1 according to the
embodiment mounted thereon will be described. FIG. 4 is a block
diagram illustrating an example of a configuration of the distance
measuring apparatus 100 according to the embodiment. As illustrated
in FIG. 4, the distance measuring apparatus 100 may include a light
source apparatus 110, an imaging apparatus 120, and a control
section 130.
[0073] The light source apparatus 110 may include the chip 3 having
the light emitting section 32 mounted thereon, the semiconductor
substrate 2 having the drive circuit 22 mounted thereon, a power
supply circuit 111, and a light emitting-side optical system 112.
The imaging apparatus 120 may include an imaging-side optical
system 121, an image sensor 122, and an image processing section
123.
[0074] The control section 130 may include a distance measuring
section 131. The control section 130 can be included in the light
source apparatus 110 or the imaging apparatus 120, or can be
configured separately from the light source apparatus 110 or the
imaging apparatus 120.
[0075] The light emitting section 32 may include the light emitting
elements 321, for example two-dimensionally arrayed, each of which
emits laser light (refer to FIG. 1). Each of the light emitting
elements 321 may have a vertical cavity surface emitting laser
(VCSEL) structure, for example.
[0076] The drive circuit 22 may include an electric circuit with
which the light emitting section 32 is driven. The power supply
circuit 111 generates power supply voltage of the drive circuit 22
from input voltage supplied by a battery (not illustrated) or the
like, which is mounted on the distance measuring apparatus 100, for
example. The drive circuit 22 drives the light emitting section 32
with the power supply voltage.
[0077] A subject S serving as a target of distance measurement is
irradiated with light emitted from the light emitting section 32
via the light emitting-side optical system 112. Reflected light
from the subject S irradiated with light as described above is
incident on an imaging surface of the image sensor 122 via the
imaging-side optical system 121.
[0078] An image sensor 7 may include an imaging element such as a
charge coupled device (CCD) sensor and a complementary metal oxide
semiconductor (CMOS) sensor, for example, and as described above,
receives the reflected light from the subject S having light
incident thereon via the imaging-side optical system 121 as
described above, and converts the received light into electrical
signals to be output.
[0079] The image sensor 122 performs various kinds of processing
such as correlated double sampling (CDS) processing and automatic
gain control (AGC) processing, for example, to electrical signals
generated through photoelectric conversion on the received light,
and further performs analog/digital (A/D) conversion thereto.
[0080] Then, the image sensor 122 outputs image signals serving as
digital data to the image processing section 123, which will be
described later. The image sensor 122 may further output frame sync
signals to the drive circuit 22. Consequently, the drive circuit 22
can allow the light emitting elements 321 in the light emitting
section 32 to emit light at a timing corresponding to a frame cycle
of the image sensor 122.
[0081] The image processing section 123 may be constituted of
various image processing processors such as a digital signal
processor (DSP). The image processing section 123 performs various
types of image signal processing to digital signals (image signals)
input from the image sensor 122, for example.
[0082] The control section 130 may be constituted of various types
of information processing apparatuses such as a microcomputer
including a central processing unit (CPU), a read only memory
(ROM), and a random access memory (RAM), and an information
processing apparatus such as a DSP. The control section 130
performs control of the drive circuit 22 so as to control
light-emitting operation with the light emitting section 32 and
control according to imaging operation with the image sensor
122.
[0083] The control section 130 may include a function serving as
the distance measuring section 131. The distance measuring section
131 measures a distance to the subject S based on image signals
input via the image processing section 123 (specifically, image
signals provided by the receiving of the reflected light from the
subject S).
[0084] The distance measuring section 131 measures the subject S so
as to be able to determine a three-dimensional shape thereof by
measuring distances to respective portions of the subject S. In
some cases, the control section 130 has a configuration in which
control to the power supply circuit 111 is performed.
[0085] The following describes a specific method for distance
measurement with the distance measuring apparatus 100. Examples of
distance measurement adopted with the distance measuring apparatus
100 can include a structured light (STL) method and a
time-of-flight (ToF) method.
[0086] The STL method is a method for measuring a distance based on
images obtained by imaging the subject S irradiated with light
having a certain bright/dark pattern such as a dot pattern, a
lattice pattern, and the like.
[0087] For the STL method, light having a dot pattern is incident
on the subject S. This pattern light is divided into a plurality of
blocks and each of the blocks has a different dot pattern assigned
thereto so that dot patterns will not overlap among the blocks.
With the STL method adopted, the light emitting section 32
functions as a light source of the STL.
[0088] The ToF method is a method for measuring a distance to a
target by detecting a flight time (time lag) of the light that the
light emitting section 32 has emitted, until the light reaches the
image sensor 122 after being reflected on the target.
[0089] When the ToF method uses what is called a direct ToF, the
image sensor 122 uses a single photon avalanche diode (SPAD), and
pulse drive is performed for the light emitting section 32.
[0090] In this case, the distance measuring section 131 calculates
a time lag after light is emitted from the light emitting section
32 until the light is received by the image sensor 122 based on
image signals input via the image processing section 123, and
calculates distances to respective portions of the subject S based
on the time lag and the light speed.
[0091] It should be noted that when the ToF method uses what is
called an indirect ToF method (phase difference method), the image
sensor 7 uses an infrared ray (IR) image sensor, for example. When
the ToF method is adopted, the light emitting section 32 functions
as a light source of the ToF sensor.
[0092] Next, with reference to FIG. 5, an example of arrangement of
the constituent elements in the distance measuring apparatus 100
according to the embodiment will be described. FIG. 5 is a diagram
for explaining an example of arrangement of the constituent
elements in the distance measuring apparatus 100 according to the
embodiment.
[0093] As illustrated in FIG. 5, the distance measuring apparatus
100 has the light source apparatus 110 and the imaging apparatus
120 mounted on the same plane of a mount substrate 101. It should
be noted that in FIG. 5, illustration of the control section 130 is
omitted. The imaging apparatus 120 includes the image sensor 122
having a plurality of imaging elements 124 arranged thereon and the
image processing section 123, the image sensor 122 being stacked on
the image processing section 123.
[0094] The light source apparatus 110 includes the chip 3 having
therein the light emitting section 32 and the semiconductor
substrate 2 including the drive circuit 22, in which the chip 3 is
mounted on the semiconductor substrate 2 by flip chip mounting. The
semiconductor substrate 2 and the chip 3 thus constitute a layered
structure.
[0095] This configuration can reduce the area that the light source
apparatus 110 occupies in the mount substrate 101 comparing with a
case where the semiconductor substrate 2 and the chip 3 are mounted
side by side on the same plane, so as to allow downsizing of the
light source apparatus 110.
[0096] It should be noted that the light source apparatus 110 may
have a configuration in which the chip 3 including the light
emitting section 32 is mounted by flip chip mounting on a
semiconductor substrate provided with a temperature sensor, and the
semiconductor substrate 2 including the drive circuit 22 is mounted
on the same plane as that for the semiconductor substrate 2 on the
mount substrate 101.
[0097] In a case with this configuration described above, the
temperature sensor detects temperatures near the light emitting
section 32. The drive circuit 22 provides drive control to the
light emitting section 32 according to the temperatures near the
light emitting section 32 detected with the temperature sensor.
With this configuration, the drive circuit 22 can prevent a change
in the light-emitting characteristics of the light emitting section
32 due to a change in the temperatures.
[0098] The semiconductor substrate 2 and the chip 3 may be
connected with each other with the bumps 4 including, for example,
the above-described porous metal layers 41 made of Au. With this
configuration, the semiconductor substrate 2 and the chip 3 can
connect under the condition of comparatively low temperature and
low pressure, so as to be less damaged by heat.
[0099] In a case where the semiconductor substrate 2 is made of
silicon and the base material made of GaAs is used for the chip 3,
even if the chip 3 is heated and swells with a coefficient of
thermal expansion different from that of the semiconductor
substrate 2, the porous metal layers 41 is elastically deformed, so
as to prevent open fault from occurring in the bumps 4.
[0100] On the light source apparatus 110, the chip 3 is mounted by
flip chip mounting on the semiconductor substrate 2 with the bumps
4 including, for example, the porous metal layers 41 made of Au.
This configuration allows faster light emitting comparing with a
case where the semiconductor substrate 2 and the chip 3 are mounted
side by side on the same plane. Consequently, the distance
measuring section 131 is able to improve in the distance
measurement accuracy. Next, with reference to FIGS. 6 and 7, the
faster light emitting and the improvement in the distance
measurement accuracy will be explained.
[0101] FIG. 6 is a circuit diagram illustrating an equivalent model
of the drive circuit 22 according to the embodiment. FIG. 7 is a
diagram for explaining a rise time and a fall time of the current
flowing in the light emitting elements 321 according to the
embodiment. As illustrated in FIG. 6, the drive circuit 22 causes a
light emitting current I1, which is heavy current, to flow in the
light emitting elements 321 serving as an active resistor R, so as
to allow the light emitting elements 321 in which the current flows
to emit light.
[0102] At that time, a shunt current 12 flows in a parasitic
capacitor C of the bumps 4 connecting the drive circuit 22 and the
light emitting section 32, and while a drive current 13 flows in a
parasitic inductance L, a reverse electromotive current 14 flows in
the parasitic inductance L.
[0103] Accordingly, as illustrated in FIG. 7 with dashed lines,
while it is ideal for the current flowing in the light emitting
elements 321 to rise instantly and fall instantly, actually as
illustrated with bold solid lines, the light emitting current I1
becomes unsharpened under influence of the reverse electromotive
current 14 at the time of driving with the heavy current.
[0104] Consequently, the rise time (Tr) and the fall time (TO of
the light emitting current I1 flowing in the light emitting
elements 321 increase. This rise time Tr and the fall time Tf
become longer as a connecting wire with which the drive circuit 22
and the light emitting section 32 are connected becomes longer.
[0105] Thus, in a light source apparatus with the semiconductor
substrate 2 and the chip 3 being mounted side by side on the same
plane, the drive circuit 22 inside the semiconductor substrate 2
and the light emitting section 32 inside the chip 3 are connected
with a long bonding wire, so that the rise time Tr and the fall
time Tf are long.
[0106] In contrast, in the light source apparatus 110 according to
the embodiments, the drive circuit 22 and the light emitting
section 32 are connected with the bumps 4, which are shorter than a
bonding wire, so that the rise time Tr and the fall time Tf can be
prevented from increasing. Therefore, the light source apparatus
110 can provide faster light emitting comparing with the light
source apparatus in which the semiconductor substrate 2 and the
chip 3 are mounted side by side on the same plane.
[0107] Furthermore, the distance measuring section 131 has, in the
light source apparatus in which the semiconductor substrate 2 and
the chip 3 are mounted side by side on the same plane, a longer
rise time Tr, so as to decrease the distance measurement accuracy
in some cases. For example, when the distance measuring apparatus
100 is a ToF sensor, the distance measuring section 131 measures a
distance to the subject S based on a time from a timing at which
the luminance of light emitted from the light emitting elements 321
reaches a peak until a timing at which the luminance of the light
received by the image sensor 122 reaches a peak.
[0108] At that time, as described above, the light source apparatus
in which the semiconductor substrate 2 and the chip 3 are mounted
side by side on the same plane has a longer rise time Tr. In
accordance with this, the luminance of light emitted from the light
emitting elements 321 is slowly increasing, so that the luminance
of the light received by the image sensor 122 is slowly
increasing.
[0109] As a result, the distance measuring section 131 incorrectly
determines that the luminance of light received by the image sensor
122 has reached a peak before the luminance of the light reaches an
original peak, and measures a distance to the subject S to be
shorter than the actual distance, which results in decrease in
distance measurement accuracy.
[0110] In contrast, the light source apparatus 110 according to the
embodiments allows faster light emitting, and thus the luminance of
light emitted from the light emitting elements 321 is able to
sharply increase. Thus, the luminance of the light received by the
image sensor 122 sharply increases.
[0111] Thus, the distance measuring section 131 further accurately
determines a timing at which the luminance of the light received by
the image sensor 122 reaches an original peak, so as to be able to
correctly measure a distance to the subject S, which results in
increase in distance measurement accuracy.
[0112] Next, with reference to FIG. 8, an example of the cross
section structure of the light source apparatus 110 will be
described. FIG. 8 is a diagram for explaining the cross section
structure of the light source apparatus 110 according to the
embodiment. As illustrated in FIG. 8, the light source apparatus
110 has a configuration in which the chip 3 is mounted by flip chip
mounting on the semiconductor substrate 2, for example made of Si,
having the drive circuit 22 formed therein (refer to FIG. 1).
[0113] The chip 3 may include a GaAs substrate 141, for example,
the surface of which having a plurality of light emitting elements
321 formed thereon (lower surface in FIG. 8). The light emitting
elements 321 each serve as a cathode on the GaAs substrate 141
side, and each serve as an anode on the semiconductor substrate 2
side, the cathodes being connected with one another. It should be
noted that the light emitting elements 321 may each serve as an
anode on the GaAs substrate 141 side, and may each serve as a
cathode on the semiconductor substrate 2 side, the anodes being
connected with one another in this case.
[0114] The light emitting elements 321 each have an electrode 142
serving as anode and an electrode 143 serving as cathode that are
provided side by side on the same plane. The light emitting
elements 321 emit light when the current flows from the electrode
142 serving as anode to the electrode 143 serving as cathode. As
illustrated in FIG. 8 with outlined arrows, the light emitting
elements 321 emit laser light in a direction from the top surface
(lower surface) to the bottom surface (upper surface) of the
exemplary GaAs substrate 141.
[0115] The semiconductor substrate 2 is provided with a plurality
of connection pads 150 on a surface of a side facing the chip 3.
Each of the connection pads 150 may be arranged on a corresponding
position opposing the electrode 142 serving as anode and the
electrode 143 serving as cathode of a chip laminated.
[0116] The connection pad 150, the electrode 142 serving as anode,
and the electrode 143 serving as cathode are connected with one
another with the bump 4 that may include the porous metal layer 41
of Au. The connection pad 150 connected with the electrode 143
serving as cathode may be grounded (unillustrated) via a wiring
151.
[0117] Each of the connection pads 150 connecting with each
electrode 142 serving as anode may be connected with an end of a
corresponding switch 154 with a corresponding wire 152 and a
corresponding pad 153 interposed between the end of the switch 154
and the connection pad 150. The other end of the switch 154 may be
connected to a current supply source that supplies the light
emitting current I1. It should be noted that in a case where the
electrode 142 serves as cathode and the electrode 143 serves as
anode, the switch 154 is connected with a corresponding electrode
serving as cathode.
[0118] A plurality of the switches 154 may be each controlled by
the drive circuit 22 individually. Consequently, the drive circuit
22 is able to control the light emitting elements 321 individually
in an independent manner. As a result, the light source apparatus
110 can irradiate the subject S with pattern light having various
types of dot patterns when the distance measuring apparatus 100
performs distance measurement with the STL method. It should be
noted that each switch 154 may be shared with the light emitting
elements 321 and controlled by a corresponding group of a certain
number of the light emitting elements 321.
[0119] Next, with reference to FIGS. 9A to 9C, procedures of
assembling the light source apparatus 110 will be explained. FIGS.
9A to 9C are diagrams for explaining procedures of assembling the
light source apparatus 110 according to the embodiment. The
following explains a process of connecting the chip 3 and the
semiconductor substrate 2.
[0120] Among the constituent elements of FIGS. 9A to 9C, those
having the same configuration as that of the constituent elements
illustrated in FIG. 8 are provided with the same numerals as
indicated in FIG. 8, so that overlapping descriptions will be
omitted. It should be noted that while here described is a case
where the electrode 142 serving as anode side of the light emitting
elements 321 is provided with the bump 4a (refer to FIG. 3D), the
connection pad 150 side of the semiconductor substrate 2 may be
provided with the bump 4 (refer to 2D).
[0121] As illustrated in FIG. 9A, when the bump 4a is mounted on
the electrode 142 serving as anode side, which is the chip 3 side,
of the light emitting elements 321, for example, the metal films 43
made of Au may be disposed between the porous metal layers 41
containing Au and the electrode 142 serving as anode.
[0122] The metal films 43 may be formed such that the ratio of the
film thicknesses of the metal films 43 to the heights of the bumps
4a is set to be less than 10%, preferably less than 5%. For
example, the metal films 43 are formed, when the porous metal
layers 41 the height (thickness) of which is 10 .mu.m are formed,
so as to have a thickness of 0.2 .mu.m.
[0123] Furthermore, when the connection pad 150 side of the
semiconductor substrate 2 is provided with the bump 4 (refer to
FIG. 2D), the metal films 42 may be formed such that the ratio of
the film thicknesses of the metal films 42 to the heights of the
bumps 4 is set to be less than 10%, preferably less than 5%. For
example, the metal films 42 are formed, when the porous metal
layers 41 the height (thickness) of which is 10 .mu.m are formed,
so as to have a thickness of 0.2 .mu.m.
[0124] The metal films 43 described above may be formed so as to
provide more rigidity to the fine structure of the photoresist
layer 52 (refer to FIG. 3B) in which the chip 3 has patterning to
form the bump 4a. With this configuration, it is possible to
achieve fine pitch of the bump 4a, the thickness of which is
approximately 10 .mu.m, such that the pitch is set to be 20 .mu.m
or smaller.
[0125] While part of the description is made assuming that the
component of the connection pad 150 on the semiconductor substrate
2 side is Au, which is similar to the porous metal layers 41, when
the component of the connection pad 150 is other than Au, the
surface of the connection pad 150 is provided with a film made of
Au, the film having the same component as that of the porous metal
layers 41. With this configuration, it is possible to increase the
connection strength between the connection pad 150 and the porous
metal layers 41.
[0126] When the chip 3 and the semiconductor substrate 2 are to be
connected, as illustrated in FIG. 9A, first, the chip 3 may be
mounted on the semiconductor substrate 2 so as to align the
connection pad 150 mounted on the upper surface of the
semiconductor substrate 2 with the bump 4a mounted on the electrode
142 serving as anode on the chip 3 side.
[0127] Subsequently, as illustrated in FIG. 9B, the chip 3 may be
lowered to abut the lower surface of the bump 4a on the upper
surface of the connection pad 150 to apply a certain pressure
thereto. After that, the chip 3 may be heated to a comparatively
lower temperature of approximately 100.degree. C., and the
connection pad 150 and the electrode 142 serving as anode are
connected with the bump 4a without melting the porous metal layers
41 made of Au in the bump 4a.
[0128] At that time, the porous metal layers 41 may be slightly
crushed in the thickness direction according to the temperature
elevated and the pressure applied thereto, and decreases in the
height (thickness) thereof. As a result, in a state after the chip
3 and the semiconductor substrate 2 are connected with the bump 4a,
the metal films 43 are such that the ratio of the film thicknesses
of the metal films 43 to the heights of the bumps 4a is set to be
less than 20%.
[0129] Similarly, when the bump 4 is mounted on the connection pad
150 side of the semiconductor substrate 2 (refer to FIG. 2D), in a
state after the chip 3 and the semiconductor substrate 2 are
connected with the bump 4, the metal films 42 may be such that the
ratio of the film thicknesses of the metal films 42 to the heights
of the bumps 4 is less than 20%.
[0130] The side surface of the light emitting elements 321 mounted
on the chip 3 and the side surface and the periphery of the lower
surface of the electrode 142 serving as anode mounted on the anode
of the light emitting elements 321 may be covered with an
insulating film 144. The insulating film 144 may include at least
one of silicon dioxide (Sift) and silicon nitride (SiN), for
example.
[0131] The side surface and the periphery of the upper surface of
the connection pad 150 mounted on the upper surface of the
semiconductor substrate 2 may be covered with an insulating film
155. The insulating film 155 may include at least one of SiO.sub.2
and SiN, for example. A portion not covered with the insulating
film 155 on the upper surface of the connection pad 150, in other
words, a dimeter of the upper opening of the insulating film 155
may be formed larger than the diameter of the bump 4a.
[0132] With this configuration, it is possible to certainly connect
the connection pad 150 and the electrode 142 serving as anode of
the light emitting elements 321 with the bump 4a even if there is
some difference in the position between the connection pad 150 and
the bump 4a.
[0133] After that, as illustrated in FIG. 9C, with insulating resin
102 being filled between the semiconductor substrate 2 and the chip
3 and between the connection parts for connecting the semiconductor
substrate 2 and the chip 3, insulation between the adjacent bumps
4a is established and the assembling of the light source apparatus
110 is completed.
[0134] With this configuration, the light source apparatus 110 can
have the adjacent bumps 4a insulated from each other with the
insulating resin 102, so as to prevent short circuit failure
between the bumps 4a and open fault of the bumps 4a due to
impulsive force.
[0135] 3. Effects
[0136] The electronic device 1 includes the semiconductor substrate
2, the chip 3, and the connection parts (exemplified as the bumps
4). The chip 3 may have a different thermal expansion rate from a
thermal expansion rate of the semiconductor substrate 2. The bumps
4 may include the porous metal layers 41 for connecting the
connection pads 21 and 31 that are arranged on opposing principle
surfaces of the semiconductor substrate 2 and the chip 3.
[0137] With this configuration, the electronic device 1 is able to
connect the connection pads 21 and 31 of the semiconductor
substrate 2 and the chip 3 by a process at lower temperature and
lower pressure as compare to a case where the connection pads 21
and 31 of the semiconductor substrate 2 and the chip 3 are
connected by a metal bump in a bulk state. Therefore, the
electronic device 100 is able to reduce damage due to high
temperature and high pressure, so that it is possible to improve
the reliability.
[0138] Furthermore, a difference between the thermal expansion
rates of the chip 3 and the semiconductor substrate 2 may be 0.1
ppm/.degree. C. or greater, for example. Therefore, for example,
even when the chip 3 generates heat and expands at the different
thermal expansion rate from that of the semiconductor substrate 2,
because the porous metal layers 41 are elastically deformed, the
electronic device 1 is able to prevent occurrence of an open fault
at the bumps 4.
[0139] Moreover, the chip 3 is a semiconductor laser, and the
semiconductor substrate 2 includes the drive circuit 22 that drives
the semiconductor laser. Therefore, even when the chip 3 expands at
the different thermal expansion rate from that of the semiconductor
substrate 2 due to heat generated by light emission of the
semiconductor laser, because the porous metal layers 41 are
elastically deformed, the electronic device 1 is able to prevent
occurrence of an open fault at the bumps 4.
[0140] The chip 3 may be or may include a semiconductor laser. The
semiconductor substrate may include a temperature sensor. With this
configuration, the drive circuit 22, which drives the semiconductor
laser, provides drive control to the light emitting section 32
according to temperatures near the light emitting section 32
detected with the temperature sensor, so as to be able to prevent a
change in the light-emitting characteristics of the light emitting
section 32 due to a change in the temperature.
[0141] The semiconductor laser includes the light emitting elements
321. The light emitting elements 321 may be two-dimensionally
arrayed, each of which emits laser light. The light emitting
elements 321 may have the electrode 142 serving as anode and the
electrode 143 serving as cathode provided on the same plane. With
this configuration, the semiconductor laser can easily connect with
the drive circuit 22.
[0142] The semiconductor substrate 2 may include the switches 154.
The switches 154 connect with the corresponding electrode 142
serving as anode or the corresponding electrode 143 serving as
cathode. Consequently, the drive circuit 22 can irradiate the
subject S with pattern light having various types of dot patterns
by controlling each of the switches 154 individually, when the
distance measuring apparatus 100 performs distance measurement with
the STL method.
[0143] The switches 154 are each connected with a corresponding
group of the light emitting elements 321. The light emitting
elements 321 are subjected to light emission control for each
group. Consequently, the distance measuring apparatus 100 can
irradiate the subject S with pattern light having various types of
patterns by changing light emission patterns for each group of the
light emitting elements 321, for example.
[0144] Moreover, the switches 154 are connected to the
corresponding light emitting elements 321. The light emitting
elements 321 are each subjected to light emission control
individually. Consequently, the distance measuring apparatus 100
can irradiate the subject S with pattern light having any desired
light emission pattern.
[0145] The light emitting elements 321 may be formed on a common
substrate. With this configuration, for the semiconductor laser,
the light emitting elements 321 can share one electrode 142 serving
as anode or electrode 143 serving as cathode.
[0146] Each of the electrode 142 serving as anode or the electrode
143 serving as cathode and each of the switches 154 are connected
with the corresponding connection part (bump 4). With this
configuration, the light source apparatus 110 is able to connect
the semiconductor substrate 2 and the chip 3 by a process at lower
temperature and lower pressure as compare with a case where the
semiconductor substrate 2 and the chip 3 are connected by a metal
bump in a bulk state. Therefore, the light source apparatus 110 is
able to reduce damage due to high temperatures and high pressures,
so that it is possible to improve the reliability.
[0147] The light emitting elements 321 may have a VCSEL structure.
With this structure, the light source apparatus 110 can reduce the
power consumption thereof, thereby enabling mass production.
[0148] The insulating resin 102 may be filled between the
semiconductor substrate 2 and the chip 3 and between the connection
parts (bumps 4). With this configuration, the light source
apparatus 110 can have the adjacent bumps 4 insulated from each
other with the insulating resin 102, so as to prevent short circuit
failure between the bumps 4 and open fault of the bumps 4 due to
impulsive force.
[0149] Furthermore, the porous metal layers 41 may include the
metal particles with the particle diameters of 0.005 .mu.m to 1.0
.mu.m. The porous metal layers 41 as described above are able to
bond metals at lower temperature than a melting point of a
bulk-state metal due to a size effect of the particle diameters.
Therefore, the connection pads 21 and 31 of the semiconductor
substrate 2 and the chip 3 can be connected by the porous metal
layers 41 that enable metal bonding at relatively low temperature,
so that the electronic device 1 is able to reduce damage due to
heat and improve the reliability.
[0150] Moreover, the bumps 4 may include the metal films 42 and 43
having the same component as that of the porous metal layers 41 at
least between the porous metal layers 41 and the connection pads 21
on the semiconductor substrate 2 side or between the porous metal
layers 41 and the connection pads 31 on the chip 3 side.
[0151] Therefore, even when the components of the connection pads
21 and 31 and the component of the porous metal layers 41 are
different, it is possible to firmly connect the connection pads 21
and 31 using the metal films 42 and 43 and the porous metal layers
41.
[0152] Furthermore, the metal films 42 and 43 may be thin films
that are formed to harden the surfaces of the patterned photoresist
layers 51 and 52 used in the process of forming the bumps 4 and 4a.
Therefore, it is possible to form the bumps 4 and 4a with fine
structures, so that it is possible to realize fine pitch of the
bumps 4 and 4a.
[0153] Moreover, the metal films 42 may be formed such that the
ratio of the film thicknesses of the metal films 42 to the heights
of the bumps 4 in the direction perpendicular to the principle
surface of the semiconductor substrate 2 is set to be less than
10%, preferably less than 5%. Furthermore, the metal films 43 are
formed such that the ratio of the film thicknesses of the metal
films 43 to the heights of the bumps 4a in the direction
perpendicular to the principle surface of the chip 3 is set to be
less than 10% or smaller, preferably less than 5%.
[0154] Therefore, it is possible to prevent the through holes that
are patterned on the photoresist layers 51 and 52 for forming the
bumps 4 and 4a from narrowing down due to formation of the metal
films 42 and 43. As a result, it is possible to appropriately fill
the thorough holes patterned on the photoresist layers 51 and 52
with the paste 40 that includes the metal particles as the material
of the bumps 4 and 4a.
[0155] Moreover, in the electronic device in which the
semiconductor substrate 2 and the chip 3 are connected by the bumps
4 and the bumps 4a, the metal films 42 and 43 may be formed such
that the ratio of the film thicknesses to halves of the thicknesses
of the laminated bodies of the bumps 4 and 4a in the direction
perpendicular to the principle surface of the semiconductor
substrate 2 and the chip 3 are set to be 10% or smaller, preferably
less than 5%.
[0156] Therefore, it is possible to prevent the through holes that
are patterned on the photoresist layers 51 and 52 for forming the
bumps 4 and 4a from narrowing down due to formation of the metal
films 42 and 43. As a result, it is possible to appropriately fill
the thorough holes patterned on the photoresist layers 51 and 52
with the paste 40 that includes the metal particles as the material
of the bumps 4 and 4a.
[0157] Furthermore, the electronic device 1 includes the
semiconductor substrate 2 and the bumps 4. The bumps 4 may include
the metal films 42 and the porous metal layers 41 that are
sequentially deposited on the surfaces of the connection pads 21
that are arranged on the principle surface of the semiconductor
substrate 2. For example, the metal films 42 may be formed such
that the ratio of the film thicknesses to the thicknesses of the
bumps 4 in the direction perpendicular to the principle surface of
the semiconductor substrate 2 is set to be 10% or smaller.
[0158] Therefore, the semiconductor substrate 2 is able to realize
fine pitch of the bumps 4 and realize flip chip mounting of the
chip 3 having a different thermal expansion rate from that of the
semiconductor substrate 2 through a process at lower temperature
and lower pressure as compared to a case where a bump made of a
metal in a bulk state is used.
[0159] The semiconductor substrate 2 may include the drive circuit
22 that drives the semiconductor laser mounted on the semiconductor
substrate 2 by flip chip mounting, for example. The drive circuit
22 is able to control the light emitting elements included in the
semiconductor laser in an independent manner by controlling the
switches 154 connecting the respective electrodes 142 serving as
anode in the light emitting elements 321 and the current supply
source. With this configuration, the drive circuit 22 can irradiate
the subject S with pattern light having various types of dot
patterns with the light source apparatus 110 when the distance
measuring apparatus 100 performs distance measurement with the STL
method.
[0160] Moreover, the electronic device 1 includes the chip 3 and
the bumps 4a. The bumps 4a may include the metal films 43 and the
porous metal layers 41 that are sequentially deposited on the
connection pads 31 that are arranged on the principle surface of
the chip 3. The metal films 43 may be formed such that the ratio of
the film thicknesses to the thicknesses of the bumps 4a in the
direction perpendicular to the principle surface of the chip 3 is
set to be 10% or smaller.
[0161] Therefore, the chip 3 is able to realize fine pitch of the
bumps 4a and realize flip chip mounting with respect to the
semiconductor substrate 2 having a different thermal expansion rate
from that of the chip 3 through a process at lower temperature and
lower pressure as compared to a case where a bump made of a metal
in a bulk state is used.
[0162] The chip 3 may be the semiconductor laser. The semiconductor
laser includes the light emitting elements 321. The light emitting
elements 321 may be two-dimensionally arrayed, each of which emits
laser light. The light emitting elements 321 may each have the
electrode 142 serving as anode and the electrode 143 serving as
cathode mounted on the same plane. With this configuration, the
semiconductor laser can easily connect with the drive circuit
22.
[0163] The chip 3 can be bonded on the drive circuit 22 with the
bumps 4 disposed therebetween, so that the area of the mount
substrate 101 can be reduced.
[0164] The effects described in this specification are merely
illustrative or exemplary and not limiting. That is, other effects
may be achieved.
[0165] The following configurations are also within the technical
scope of the present disclosure.
[0166] (1) [0167] An electronic device including: [0168] a
semiconductor substrate; [0169] a chip having a different thermal
expansion rate from a thermal expansion rate of the semiconductor
substrate; and [0170] a connection part including a porous metal
layer for connecting connection pads that are arranged on opposing
principle surfaces of the semiconductor substrate and the chip.
[0171] (2) [0172] The electronic device according to the
above-mentioned (1), wherein a difference between the thermal
expansion rates of the chip and the semiconductor substrate is 0.1
ppm/.degree. C. or greater.
[0173] (3) [0174] The electronic device according to the
above-mentioned (1) or (2), wherein the chip is a semiconductor
laser, and [0175] the semiconductor substrate includes a drive
circuit that drives the semiconductor laser.
[0176] (4) [0177] The electronic device according to the
above-mentioned (1) to (3), wherein the chip is a semiconductor
laser, and [0178] the semiconductor substrate includes a
temperature sensor.
[0179] (5) [0180] The electronic device according to the
above-mentioned (3) or (4), wherein the semiconductor laser
includes a plurality of light emitting elements two-dimensionally
arrayed, each of which emits laser light, and [0181] the light
emitting elements each have an electrode serving as anode and an
electrode serving as cathode provided on a same plane.
[0182] (6) [0183] The electronic device according to the
above-mentioned (5), wherein the semiconductor substrate includes a
switch, and [0184] the switch is connected with the electrode
serving as anode or the electrode serving as cathode.
[0185] (7) [0186] The electronic device according to the
above-mentioned (6), wherein the switch is connected with a
corresponding group of the light emitting elements, and [0187] the
light emitting elements are subjected to light emission control for
the corresponding group.
[0188] (8) [0189] The electronic device according to the
above-mentioned (6), wherein a plurality of the switches are
connected with the respective light emitting elements, and [0190]
the light emitting elements are subjected to light emission control
individually.
[0191] (9) [0192] The electronic device according to any one of the
above mentioned (6) to (8), wherein each of the electrodes serving
as anode or each of the electrodes serving as cathode and each of
the switches are connected with the connection part.
[0193] (10) [0194] The electronic device according to any one of
the above mentioned (5) to (9), wherein the light emitting elements
are formed on a common substrate.
[0195] (11) [0196] The electronic device according to any one of
the above mentioned (5) to (10), wherein the light emitting
elements have a vertical cavity surface emitting laser (VCSEL)
structure.
[0197] (12) [0198] The electronic device according to any one of
the above mentioned (1) to (11), wherein insulating resin is filled
between the semiconductor substrate and the chip and between the
connection parts.
[0199] (13) [0200] The electronic device according to any one of
the above mentioned (1) to (12), wherein the porous metal layer
includes a metal particle with a particle diameter of 0.005 .mu.m
to 1.0 .mu.m.
[0201] (14) [0202] The electronic device according to any one of
the above mentioned (1) to (13), wherein [0203] the connection part
includes a metal film having a same component as a component of the
porous metal layer at least between the porous metal layer and the
connection pad on the semiconductor substrate side or between the
porous metal layer and the connection pad on the chip side.
[0204] (15) [0205] The electronic device according to the
above-mentioned (14), wherein the metal film is formed such that a
ratio of a film thickness to a thickness of the connection part in
a direction perpendicular to the principle surface is set to be 10%
or smaller.
[0206] (16) [0207] The electronic device according to the
above-mentioned (15), wherein the metal film is formed such that
the ratio of the film thickness to the thickness of the connection
part in the direction perpendicular to the principle surface is set
to be less than 5%.
[0208] (17) [0209] The electronic device according to
above-mentioned (14), wherein the metal film is formed such that a
ratio of a film thickness to a half of a thickness of the
connection part in a direction perpendicular to the principle
surface is set to be 10% or smaller.
[0210] (18) [0211] The electronic device according to
above-mentioned (17), wherein the metal film is formed such that
the ratio of the film thickness to a half of the thickness of the
connection part in the direction perpendicular to the principle
surface is set to be less than 5%.
[0212] (19) [0213] The electronic device according to any of the
above-mentioned (1) to (18), wherein a height ratio between the
porous metal layer and the connection part in the direction
perpendicular to the principle surface is larger than 90%.
[0214] (20) [0215] An electronic device including: [0216] a
semiconductor substrate; and [0217] a bump including a metal film
and a porous metal layer that are sequentially deposited on a
surfaces of a connection pad that is arranged on a principle
surface of the semiconductor substrate, wherein [0218] the metal
film is formed such that a ratio of a film thickness to a thickness
of the bump in a direction perpendicular to the principle surface
is set to be 10% or smaller.
[0219] (21) [0220] The electronic device according to
above-mentioned (20), wherein the semiconductor substrate includes
a drive circuit that drives the semiconductor laser mounted on the
semiconductor substrate by flip chip mounting, and [0221] the drive
circuit controls a plurality of light emitting elements included in
the semiconductor laser in an independent manner by controlling
switches correspondingly connecting the light emitting elements and
a current supply source.
[0222] (22) [0223] An electronic device including: [0224] a chip;
and [0225] a bump including a metal film and a porous metal layer
that are sequentially deposited on a surfaces of a connection pad
that is arranged on a principle surface of the chip, wherein [0226]
the metal film is formed such that a ratio of a film thickness to a
thickness of the bump in a direction perpendicular to the principle
surface is set to be 10% or smaller.
[0227] (23) [0228] The electronic device according to
above-mentioned (22), wherein the chip is a semiconductor laser,
[0229] the semiconductor laser includes a plurality of light
emitting elements two-dimensionally arrayed, each of which emits
laser light, and [0230] the light emitting elements each have an
electrode serving as anode and an electrode serving as cathode
provided on a same plane.
[0231] Although the invention has been described with respect to
specific embodiments for a complete and clear disclosure, the
appended claims are not to be thus limited but are to be construed
as embodying all modifications and alternative constructions that
may occur to one skilled in the art that fairly fall within the
basic teaching herein set forth. The aspects and features mentioned
and described above together with one or more of the previously
described examples and figures, may as well be combined with one or
more of the other examples in order to replace a like feature of
the other example or in order to additionally introduce the feature
to the other example. For example, structural and/or functional
details provided in the detailed description above may likewise
apply to electronic devices configured as described with reference
to configurations (19) to (23).
* * * * *