U.S. patent application number 17/531071 was filed with the patent office on 2022-03-10 for semiconductor structure with an antenna and method making the same.
The applicant listed for this patent is SJ SEMICONDUCTOR (JIANGYIN) CORPORATION. Invention is credited to Yenheng CHEN, Chengchung Lin, Jangshen Lin, Chengtar Wu.
Application Number | 20220077567 17/531071 |
Document ID | / |
Family ID | 1000005986648 |
Filed Date | 2022-03-10 |
United States Patent
Application |
20220077567 |
Kind Code |
A1 |
CHEN; Yenheng ; et
al. |
March 10, 2022 |
SEMICONDUCTOR STRUCTURE WITH AN ANTENNA AND METHOD MAKING THE
SAME
Abstract
The present disclosure provides a semiconductor structure with
an antenna and a method making the same. The semiconductor
structure has an antenna substrate with a first surface and a
second surface opposite to the first surface; an antenna module
disposed on the first surface of the antenna substrate; and a
redistribution layer disposed on the second surface of the antenna
substrate. The semiconductor structure with the antenna according
to the present application provides the antenna module and the
redistribution layer on two opposite surfaces of the antenna
substrate, the material of the antenna substrate for supporting the
antenna module can be selected according to actual needs, to
provide more options. Signal loss can be reduced through the
selection of the antenna substrate; the redistribution layer is
provided on the surface of the antenna substrate for bonding the
semiconductor chips.
Inventors: |
CHEN; Yenheng; (Jiangyin
City, CN) ; Wu; Chengtar; (Jiangyin City, CN)
; Lin; Jangshen; (Jiangyin City, CN) ; Lin;
Chengchung; (Jiangyin City, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SJ SEMICONDUCTOR (JIANGYIN) CORPORATION |
Jiangyin City |
|
CN |
|
|
Family ID: |
1000005986648 |
Appl. No.: |
17/531071 |
Filed: |
November 19, 2021 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
16212436 |
Dec 6, 2018 |
11211687 |
|
|
17531071 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/66 20130101;
H01Q 1/38 20130101; H01L 2224/04105 20130101; H01L 23/49838
20130101; H01Q 1/2283 20130101; H01Q 21/061 20130101; H01Q 21/0087
20130101; H01L 2223/6677 20130101; H01Q 21/065 20130101; H01L
21/4846 20130101; H01Q 1/36 20130101 |
International
Class: |
H01Q 1/22 20060101
H01Q001/22; H01Q 1/38 20060101 H01Q001/38; H01Q 21/00 20060101
H01Q021/00; H01L 23/498 20060101 H01L023/498; H01L 23/66 20060101
H01L023/66; H01L 21/48 20060101 H01L021/48; H01Q 21/06 20060101
H01Q021/06; H01Q 1/36 20060101 H01Q001/36 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 7, 2017 |
CN |
2017112820039 |
Dec 7, 2017 |
CN |
2017216860539 |
Claims
1. A semiconductor structure with an antenna, comprising: an
antenna substrate comprising a first surface and a second surface
opposite to the first surface; an antenna module disposed on the
first surface of the antenna substrate; and a redistribution layer
disposed on the second surface of the antenna substrate.
2. The semiconductor structure with the antenna according to claim
1, wherein the antenna substrate comprises a glass substrate, a
silicon substrate, a polymer substrate, or a composite
substrate.
3. The semiconductor structure with the antenna according to claim
1, wherein the antenna module comprises a plurality of antenna
units, wherein the plurality of the antenna units each is a block
antenna or a spiral antenna.
4. The semiconductor structure with the antenna according to claim
3, wherein the plurality of antenna units is distributed in a
single layer on the first surface of the antenna substrate.
5. The semiconductor structure with the antenna according to claim
3, wherein the plurality of antenna units each comprises a stack of
antenna layers, and wherein the plurality of antenna units is
distributed with a space from each other, and wherein two adjacent
antenna layers are connected to each other.
6. The semiconductor structure with the antenna according to claim
3, wherein the antenna module further comprises a dielectric layer,
and wherein the dielectric layer is disposed between two adjacent
antenna layers of the antenna units.
7. The semiconductor structure with the antenna according to claim
4, wherein each antenna layer of one of the antenna units comprises
an array of antennas, distributed in an annulus, having regular or
irregular spaces from each other, in a plane of the first surface
of the antenna substrate.
8. The semiconductor structure with the antenna according to claim
1, wherein the redistribution layer comprises: an insulating layer
disposed on the second surface of the antenna substrate; at least
one metal wire layer disposed in the insulating layer; and an
under-bump metal layer disposed on a surface of the insulating
layer, and electrically connecting to the metal wire layer.
9. The semiconductor structure with the antenna according to claim
5, wherein each antenna layer of one of the antenna units comprises
an array of antennas, distributed in an annulus, having regular or
irregular spaces from each other, in a plane of the first surface
of the antenna substrate.
10. The semiconductor structure with the antenna according to claim
6, wherein each antenna layer of one of the antenna units comprises
an array of antennas, distributed in an annulus, having fixed or
unfixed spaces from each other, in a plane of the first surface of
the antenna substrate.
Description
CROSS REFERENCES TO RELATED APPLICATIONS
[0001] This application is the divisional application of U.S.
patent application Ser. No. 16/212,436, filed Dec. 6, 2018,
entitled "SEMICONDUCTOR STRUCTURE WITH AN ANTENNA AND METHOD MAKING
THE SAME". This application claims the benefits of priority to U.S.
patent application Ser. No. 16/212,436, Chinese Patent Application
No. CN2017112820039, entitled "Semiconductor Structure With an
Antenna and Method Making the Same", filed with CNIPA on Dec. 7,
2017, and Chinese Patent Application No. CN2017216860539, entitled
"Semiconductor Structure With Antenna", filed with CNIPA on Dec. 7,
2017, the contents of which are incorporated herein by reference in
its entirety.
TECHNICAL FIELD
[0002] The present disclosure relates to the technical field of
semiconductor, in particular, to semiconductor chip packaging.
BACKGROUND
[0003] To achieve a better communication effect, radio frequency
chips are generally provided with antennas during use. A fan-out
wafer level packaging method of the radio frequency chips generally
comprises the following steps: providing a carrier substrate and
forming an adhesive layer on a surface of the carrier; patterning
and electroplating on the adhesive layer to obtain a redistribution
layer (RDL); mounting the radio frequency chip on the
redistribution layer by adopting a chip bonding process; packaging
the chip in a plastic packaging material layer by adopting an
injection molding process; forming an antenna on the surface of the
plastic packaging material layer; removing the carrier and the
adhesive layer; photo-etching and electroplating on the
redistribution layer to form an Under-Bump Metal (UBM) layer;
performing ball placement and reflow on the UBM layer to form a
solder ball bump; and then performing wafer bonding and dicing.
Accordingly, in the existing radio frequency chip packaging
structure, the radio frequency chip is packaged in the plastic
packaging material layer, and the antenna can only be fabricated on
the surface of the plastic packaging material layer and used in
conjunction with the radio frequency chip. However, the packaging
structure has the following problems: the material layer in contact
with the antennas for the radio frequency chip has little choice
but plastic, therefore the loss of the antenna signal is large, and
it is not flexible to arrange the structures of the antenna
relative to the radio frequency chip.
SUMMARY
[0004] The present disclosure provides a semiconductor structure
with an antenna, comprising: an antenna substrate comprising a
first surface and a second surface opposite to the first surface;
an antenna module disposed on the first surface of the antenna
substrate; and a redistribution layer disposed on the second
surface of the antenna substrate.
[0005] Preferably, the antenna substrate comprises a glass
substrate, a silicon substrate, a Roger 5880 substrate, a polymer
substrate or a composite substrate.
[0006] Preferably, the antenna module comprises a plurality of
antenna units, wherein the plurality of the antenna units each is a
block antenna or a spiral antenna.
[0007] Preferably, the plurality of antenna units is distributed in
a single layer on the first surface of the antenna substrate.
[0008] Preferably, the plurality of antenna units each comprises a
stack of antenna layers, and wherein the plurality of antenna units
is distributed with a space from each other, and wherein two
adjacent antenna layers are connected to each other.
[0009] Preferably, the antenna module further comprises a
dielectric layer, and wherein the dielectric layer is disposed
between two adjacent antenna layers of the antenna units.
[0010] Preferably, each antenna layer of one of the antenna units
comprises an array of antennas, distributed in an annulus, having
regular or irregular spaces from each other, in a plane of the
first surface of the antenna substrate.
[0011] Preferably, the redistribution layer comprises: an
insulating layer disposed on the second surface of the antenna
substrate; at least one metal wire layer disposed in the insulating
layer; and an Under-Bump Metal layer disposed on a surface of the
insulating layer, and electrically connecting to the metal wire
layer.
[0012] The present application further provides a method for
fabricating a semiconductor structure with an antenna, comprising
the following steps: [0013] 1) providing an antenna substrate,
wherein the antenna substrate comprises a first surface and a
second surface opposite to the first surface; [0014] 2) forming an
antenna module on the first surface of the antenna substrate; and
[0015] 3) forming a redistribution layer on the second surface of
the antenna substrate.
[0016] Preferably, the antenna substrate provided in step 1)
comprises a glass substrate, a silicon substrate, a Roger 5880
substrate, a polymer substrate or a composite substrate.
[0017] Preferably, in step 2), forming the antenna module on the
first surface of the antenna substrate wherein the antenna module
comprises a plurality of antenna units arranged in an array,
wherein the plurality of antenna unites each is a block antenna or
a spiral antenna, wherein the array is in rectangular ring shape,
and wherein a space between two adjacent antenna units is not
fixed.
[0018] Preferably, in step 2), forming the antenna module on the
first surface of the antenna substrate further comprises the
following steps: 2-1) forming a first layer of a plurality of
antenna units on the first surface of the antenna substrate,
wherein the first layer of the plurality of the antenna units are
distributed in an array, wherein the array is distributed in an
annulus, having fixed or unfixed spaces from each other, in a plane
of the first surface of the antenna substrate; 2-2) forming a first
dielectric layer on the first surface of the antenna substrate,
wherein the first dielectric layer covers the antenna units; 2-3)
forming a conductive plug in the first dielectric layer, wherein
the; and 2-4) forming a second layer of a plurality of antenna
units on the surface of the first dielectric layer, wherein the
second layer of the plurality of antenna units are distributed in
an array, wherein the array is in an annulus, having fixed or
unfixed spaces between two adjacent antenna units.
[0019] Preferably, the method further comprises the following steps
after step 2-4): 2-5) forming a second dielectric layer on the
surface of the first dielectric layer, wherein the second
dielectric layer covers the plurality of antenna units; 2-6)
forming a conductive plug in the second dielectric layer, wherein
the conductive plug is electrically connected to one of the
plurality of antenna units; and 2-7) forming a third layer of a
plurality of antennas antenna units, on the surface of the second
dielectric layer, wherein the third layer of the plurality of
antenna units are distributed in an array, wherein the array is an
annulus, wherein the space between two adjacent antenna units in
the third layer is fixed or unfixed.
[0020] Preferably, the method further comprises: repeating step
2-5), step 2-6), and step 2-7) at least once after step 2-7).
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIG. 1 illustrates a flowchart disclosing a method for
fabricating a semiconductor structure with an antenna, according to
embodiment 1 of the present application.
[0022] FIG. 2 to FIG. 3 illustrate cross sectional views after step
1) and step 2) of a method for fabricating a semiconductor
structure with an antenna according to embodiment 1 of the present
disclosure.
[0023] FIGS. 4-6 illustrate top views of exemplary antenna modules
according to embodiments of the present disclosure.
[0024] FIG. 7 illustrates a cross sectional view after step 2) of
forming an antenna module on a first surface of an antenna
substrate according to embodiment 1 of the present disclosure.
[0025] FIGS. 8-9 illustrate cross sectional views of a
semiconductor structure with an antenna according to embodiments of
the present application.
DESCRIPTION OF COMPONENT REFERENCE SIGNS
[0026] 10 Antenna substrate
[0027] 11 Antenna module
[0028] 111 Antenna unit
[0029] 112 Dielectric layer
[0030] 113 Conductive plug
[0031] 12 Redistribution layer
[0032] 121 Insulating layer
[0033] 122 Metal wire layer
[0034] 123 Under-Bump Metal layer
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0035] The implementation modes of the present disclosure will be
described below through specific examples. One skilled in the art
can easily understand other advantages and effects of the present
disclosure according to contents disclosed in the description. The
present disclosure may also be implemented or applied through other
different implementation modes, and various modifications or
changes may be made to all details in the description based on
different points of view and applications without departing from
the spirit of the present disclosure.
[0036] It needs to be stated that the drawings provided in these
embodiments are just used for schematically describing the basic
concept of the present disclosure, thus only illustrate components
only related to the present disclosure and are not drawn according
to the numbers, shapes and sizes of components during actual
implementation, the configuration, number and scale of each
component during actual implementation thereof may be freely
changed, and the component layout configuration thereof may be more
complex.
Embodiment 1
[0037] Referring to FIG. 1, the present disclosure provides a
method for fabricating a semiconductor structure with an antenna,
including the following steps: [0038] 1) providing an antenna
substrate, wherein the antenna substrate comprises a first surface
and a second surface opposite to the first surface; [0039] 2)
forming an antenna module on the first surface of the antenna
substrate; and [0040] 3) forming a redistribution layer on the
second surface of the antenna substrate.
[0041] In step 1), referring to step S1 in FIG. 1. An antenna
substrate 10 in FIG. 2 is provided, comprises a first surface and a
second surface opposite to the first surface.
[0042] As an example, the antenna substrate 10 may be a substrate
that can play a role of supporting carrier, preferably, the antenna
substrate 10 is a substrate with less antenna signal loss, more
preferably, in this embodiment, the antenna substrate 10 is: a
glass substrate, a silicon substrate, a Roger 5880.TM. substrate, a
polymer substrate or a composite substrate, the composite substrate
may include one or different organic materials, and one or
different inorganic materials.
[0043] As an example, the shape of the antenna substrate 10 may be
set according to actual needs, and the shape of the antenna
substrate 10 may be rectangular, circular, hexagonal, triangular or
trapezoidal, etc., which is not limited herein.
[0044] In step 2), referring to step S2 in FIG. 1, and cross
sectional views in FIG. 3 to FIG. 7, an antenna module 11 is formed
on the first surface of the antenna substrate 10.
[0045] In one example, as illustrated in FIG. 3 to FIG. 6, forming
the antenna module 11 on the first surface of the antenna substrate
10 comprises: forming a layer which comprises a plurality of
antenna units 111 on the first surface of the antenna substrate 10
as the antenna module 11, wherein the plurality of antenna units
111 are distributed in an array, distributed in an annulus, or
irregularly distributed in a plane of the first surface of the
antenna substrate 10, and the antenna units 111 are block antennas
or spiral antennas.
[0046] Specifically, an antenna material layer may be formed on the
first surface of the antenna substrate 10, then the excessive
antenna material layer may be removed by adopting a photo-etching
process, and the reserved antenna material layer is used as a
plurality of the antenna units 111. In other examples, a graphical
mask layer with an opening may be formed on the first surface of
the antenna substrate 10, and the opening defines the shape and
position of the antenna unit 111; then, an antenna material layer
is deposited in the opening to form the antenna units 111; and
finally, the graphical mask layer is removed.
[0047] As an example, the antenna units 111 may be distributed in
any shape on the first surface of the antenna substrate 10 in a
plane of the antenna substrate 10, and the antenna units 111 may be
antennas with any shape including the block antennas or the spiral
antennas. Wherein, FIG. 4 illustrates an example that the antenna
units 111 are block antennas, and the block antennas are
distributed in a rectangular ring shape in a plane of the antenna
substrate 10's first surface; FIG. 5 illustrates an example that
the antenna units 111 are block antennas, and the block antennas
are arranged in a rectangular ring shape and at its center at a
plane of the antenna substrate 10's first surface; FIG. 6
illustrates an example that the antennas are rectangular spiral
antennas, and the rectangular spiral antennas are distributed in an
array at the plane of the antenna substrate 10's first surface.
[0048] It needs to be noted that, when the antenna units 111 are
block antennas, the block antennas may be metal blocks; and when
the antenna units 111 are spiral antennas, the spiral antennas may
be formed by winding a metal wire into a spiral shape. In addition
to the rectangular spiral antennas illustrated in FIG. 6, the
antenna units 111 may be other spiral antennas, such as circular
spiral antennas.
[0049] In another example, referring to FIG. 7, the antenna module
11 comprises a plurality of the antenna units 111, the plurality of
antenna units 111 are distributed in two layers stacked with a
space from each other on the first surface of the antenna substrate
10, and two adjacent layers of the antenna units 111 are connected
through a conductive plug 113; and forming the antenna assembly 11
on the first surface of the antenna substrate 10 comprises the
following steps: [0050] 2-1) forming a first layer of antennas
comprising a plurality of antenna units 111 on the first surface of
the antenna substrate 10, wherein the plurality of the antenna
units 111 in the first layer of antennas are distributed in an
array, distributed in an annulus, or irregularly distributed in a
plane of the first surface of the antenna substrate 10, and the
antenna units 111 are block antennas or spiral antennas; [0051]
2-2) forming a first dielectric layer 112 on the first surface of
the antenna substrate 10, wherein the first dielectric layer 112
covers the antenna units 111; [0052] 2-3) forming a conductive plug
113 in the first dielectric layer 112, wherein the conductive plug
113 is electrically connected to the antenna units 111; and [0053]
2-4) forming a second layer of antennas comprising a plurality of
the antenna units 111 on the surface of the first dielectric layer
112, wherein the plurality of antenna units 111 in the second layer
of antennas are distributed in an array, distributed in an annulus,
or irregularly distributed in a plane of the first surface of the
antenna substrate 10.
[0054] In another example, the plurality of antenna units 111 are
also distributed in three layers stacked with a space from each
other on the first surface of the antenna substrate 10. After step
2-4), the method further comprises the following steps: [0055] 2-5)
forming a second dielectric layer 112 on the surface of the first
dielectric layer 112, wherein the second dielectric layer 112
covers the antenna units 111 formed in step 2-4); [0056] 2-6)
forming a conductive plug 113 in the second dielectric layer 112
formed in step 2-5), wherein the conductive plug 113 is
electrically connected to the antenna units 111 formed in step
2-4); and [0057] 2-7) forming a third layer of antennas comprising
a plurality of the antenna units 111 on the surface of the second
dielectric layer 112 formed in step 2-5), wherein the plurality of
antenna units 111 in the third layer of antennas are distributed in
an array, distributed in an annulus, or irregularly distributed in
a plane of the first surface of the antenna substrate 10.
[0058] In another example, the plurality of antenna units 111 are
also distributed in more than three layers stacked with a space
from each other on the first surface of the antenna substrate 10.
After step 2-7), the method further comprises repeating step 2-5),
step 2-6), and step 2-7) at least once.
[0059] As an example, in each of the above-mentioned examples, the
material of the dielectric layer 112 may include, but not limited
to, silicon dioxide or PET (polyethylene terephthalate), which is
fabricated by adopting processes such as spin coating, chemical
vapor deposition (CVD) or plasma enhanced CVD. The materials of the
antenna units 111 and the conductive plug 113 may include, but not
limited to, a combination of copper, aluminum, nickel, gold,
silver, tin, or titanium, wherein the antenna units 111 and the
conductive plug 113 may be fabricated by adopting physical vapor
deposition (PVD), chemical vapor deposition (CVD), sputtering,
electroplating or electrodeless plating.
[0060] In step 3), referring to step S3 in FIG. 1, FIG. 8 and FIG.
9, a redistribution layer 12 is formed on the second surface of the
antenna substrate 10.
[0061] In one example, the redistribution layer 12 comprises a
metal wire layer 122, at least one insulating layer 121, and an
Under-Bump Metal layer 123, and forming the redistribution layer 12
on the second surface of the antenna substrate 10 comprises the
following steps: [0062] 3-1) forming the metal wire layer 122 on
the second surface of the antenna substrate 10; [0063] 3-2) forming
the insulating layer 121 on the second surface of the antenna
substrate 10, wherein the insulating layer 121 encloses the metal
wire layer 122, and wherein the top surface of the insulating layer
121 is higher than the top surface of the metal wire layer 122;
[0064] 3-3) forming an opening in the insulating layer 121, wherein
the opening exposes part of the metal wire layer 122; and [0065]
3-4) forming the Under-Bump Metal layer 123 in the opening, wherein
the Under-Bump Metal layer 123 is electrically connected to the
metal wire layer 122.
[0066] In another example, the redistribution layer 12 comprises a
metal wire layer 122, at least one insulating layer 121, and an
Under-Bump Metal layer 123, and forming the redistribution layer 12
on the second surface of the antenna substrate 10 comprises the
following steps: [0067] 3-1) forming a first insulating layer 121
on the second surface of the antenna substrate 10; [0068] 3-2)
forming the metal wire layer 122 on the surface of the first
insulating layer 121; [0069] 3-4) forming a second insulating layer
of the same material as the first insulating layer on the top
surface of the first insulating layer 121, wherein the second
insulating layer covers the metal wire layer 122, and the first and
the second insulating layer merge outside the metal wire layer 122;
[0070] 3-5) forming openings in the second insulating layer 121,
wherein the opening exposes the metal wire layer 122; and [0071]
3-6) forming the Under-Bump Metal layer 123 in the opening.
[0072] As an example, in the above-mentioned example, the material
of the metal wire layer 122 may be, but not limited to, a
combination of copper, aluminum, nickel, gold, silver or titanium,
and the metal wire layer 122 may be formed by adopting a process
such as PVD, CVD, sputtering, electroplating or electrodeless
plating. The material of the insulating layer 121 may be a low k
dielectric material. Specifically, the material of the insulating
layer 121 may be one of epoxy resin, silica gel, Polyimide (PI),
Polybenzoxazole (PBO), Benzocyclobutene (BCB) silicon oxide,
phosphorosilicate glass and fluorine-containing glass, and the
insulating layer 121 may be formed by adopting processes such as
spin coating, CVD or plasma enhanced CVD.
[0073] It needs to be noted that, in other examples, step 2) and
step 3) can also be interchanged, that is, the redistribution layer
12 may be formed on the second surface of the antenna substrate 10,
and the antenna units 11 may be formed on the first surface of the
antenna substrate 10.
Embodiment 2
[0074] Referring to FIG. 8 and FIG. 9. This embodiment further
provides a semiconductor structure with an antenna. The
semiconductor structure with the antenna comprises: an antenna
substrate 10 comprising a first surface and a second surface
opposite to the first surface; an antenna module 11 disposed on the
first surface of the antenna substrate 10; and a redistribution
layer 12 disposed on the second surface of the antenna substrate
10.
[0075] As an example, the antenna substrate 10 may be a substrate
that can play a supporting role, preferably, the antenna substrate
10 is a substrate with less antenna signal loss, more preferably,
in this embodiment, the antenna substrate 10 may be: a glass
substrate, a silicon substrate, a Roger 5880.TM. substrate, a
polymer substrate, or a composite substrate, the composite
substrate maybe one or multiple different organic materials, and
one or multiple different inorganic materials.
[0076] As an example, the shape of the antenna substrate 10 may be
set according to actual needs, and the shape of the antenna
substrate 10 may be rectangular, circular, hexagonal, triangular or
trapezoidal, etc., which is not limited herein.
[0077] As an example, the antenna module 11 comprises at least one
antenna unit 111, and the antenna unit 111 is a block antenna or a
spiral antenna.
[0078] In one example, as illustrated in FIG. 8, the antenna module
11 includes a plurality of the antenna units 111, and the plurality
of antenna units 111 are distributed in a single layer on the first
surface of the antenna substrate 10.
[0079] As an example, the antenna units 111 may be distributed in
any shape on the first surface of the antenna substrate 10 in a
plane of the antenna substrate 10, and the antenna units 111 may be
antennas with any shape including the block antennas or the spiral
antennas. Wherein, FIG. 4 illustrates an example that the antenna
units 111 are block antennas, and the block antennas are
distributed in a rectangular ring shape in a plane of the antenna
substrate 10 on the first surface of the antenna substrate 10; FIG.
5 illustrates an example that the antenna units 111 are block
antennas, and the block antennas are distributed in a rectangular
ring shape with the block antenna in a center in a plane of the
antenna substrate 10 on the first surface of the antenna substrate
10; and FIG. 6 illustrates an example that the antennas are
rectangular spiral antennas, and the rectangular spiral antennas
are distributed in an array in a plane of the antenna substrate 10
on the first surface of the antenna substrate 10.
[0080] It needs to be noted that, when the antenna units 111 are
block antennas, the block antennas may be metal blocks; and when
the antenna units 111 are spiral antennas, the spiral antennas may
be formed by winding a metal wire into a spiral shape. In addition
to the rectangular spiral antennas illustrated in FIG. 6, the
antenna units 111 may be any other spiral antennas, such as
circular spiral antennas.
[0081] In another example, the antenna module 11 comprises a
plurality of the antenna units 111, the plurality of antenna units
111 are distributed in a plurality of layers stacked with a space
from each other on the first surface of the antenna substrate 10,
and two adjacent layers of the antenna units 111 are connected;
wherein FIG. 9 illustrates an example that the plurality of antenna
units 111 are distributed in two layers stacked with a space from
each other on the first surface of the antenna substrate 10.
[0082] As an example, the antenna module 11 further comprises a
dielectric layer 12, the dielectric layer 112 is disposed between
two adjacent layers of the antenna units 111, FIG. 9 illustrates an
example that the antenna units are distributed in two layers, the
dielectric layer 112 covers the first layer of antenna units 111,
and the second layer of antenna units 111 is disposed on the
surface of the dielectric layer 112.
[0083] As an example, the antenna module 11 further comprises a
conductive plug 113, the conductive plug 113 is disposed within the
dielectric layer 112, disposed between two adjacent layers of the
antenna units 111, and electrically connecting the two adjacent
layers of antenna units 111.
[0084] As an example, in each of the above-mentioned examples, the
material of the dielectric layer 112 may include, but not limited
to, silicon dioxide or PET (polyethylene terephthalate), which is
fabricated by adopting processes such as spin coating, chemical
vapor deposition (CVD) or plasma enhanced CVD (PECVD). The
materials of the antenna units 111 and the conductive plug 113 may
include, but not limited to, one or a combination of copper,
aluminum, nickel, gold, silver, tin, or titanium, wherein the
antenna units 111 and the conductive plug 113 may be fabricated by
adopting physical vapor deposition (PVD), chemical vapor deposition
(CVD), sputtering, electroplating or electrodeless plating.
[0085] As an example, the redistribution layer 12 comprises: an
insulating layer 121 disposed on the second surface of the antenna
substrate 10; at least one metal wire layer 122 disposed in the
insulating layer 121; and an Under-Bump Metal layer 123 disposed on
a surface of the insulating layer 121, and electrically connecting
to the metal wire layer 122.
[0086] As an example, in the above-mentioned example, the material
of the metal wire layer 122 may be, but not limited to, copper,
aluminum, nickel, gold, silver titanium, or a combination thereof,
and the metal wire layer 122 may be formed by adopting a process
such as PVD, CVD, sputtering, electroplating or electrodeless
plating. The material of the insulating layer 121 may be a low k
dielectric material. Specifically, the material of the insulating
layer 121 may be epoxy resin, silica gel, PI, PBO, BCB, silicon
oxide, phosphorosilicate glass or fluorine-containing glass, and
the insulating layer 121 may be formed by adopting processes such
as spin coating, CVD or plasma enhanced CVD.
[0087] To sum up, the present application provides a semiconductor
structure with an antenna and a method making the same, wherein the
semiconductor structure with the antenna comprises: an antenna
substrate comprising a first surface and a second surface opposite
to the first surface; an antenna module disposed on the first
surface of the antenna substrate; and a redistribution layer
disposed on the second surface of the antenna substrate. The
semiconductor structure with the antenna according to the present
application provides the antenna module and the redistribution
layer on two opposite surfaces of the antenna substrate, the
material of the antenna substrate for supporting the antenna module
can be selected according to actual needs, to allow more choices.
So the loss of the antenna signal can be reduced through the
selection of the antenna substrate. The redistribution layer is
provided on the surface of the antenna substrate, the
redistribution layer is used for bonding the semiconductor chips,
different semiconductor chips can be selected and replaced to be
bonded on the redistribution layer to match the antenna module
according to the needs, as a result the application range is
widened. Thus, the process is more flexible.
[0088] The above-mentioned embodiments are only used for
exemplarily describing the principle and effects of the present
disclosure instead of limiting the present disclosure. One skilled
in the art may make modifications or changes to the above-mentioned
embodiments without departing from the spirit and scope of the
present disclosure. Therefore, all equivalent modifications or
changes made by those who have common knowledge in the art without
departing from the spirit and technical thought disclosed by the
present disclosure shall be still covered by the claims of the
present disclosure.
* * * * *