U.S. patent application number 17/522861 was filed with the patent office on 2022-03-03 for lift-off apparatus for manufacturing flexible light emitting device.
The applicant listed for this patent is SAKAI DISPLAY PRODUCTS CORPORATION. Invention is credited to KATSUHIKO KISHIMOTO, KOHICHI TANAKA.
Application Number | 20220069265 17/522861 |
Document ID | / |
Family ID | |
Filed Date | 2022-03-03 |
United States Patent
Application |
20220069265 |
Kind Code |
A1 |
KISHIMOTO; KATSUHIKO ; et
al. |
March 3, 2022 |
LIFT-OFF APPARATUS FOR MANUFACTURING FLEXIBLE LIGHT EMITTING
DEVICE
Abstract
According to a flexible light-emitting device production method
of the present disclosure, after an intermediate region (30i) and a
flexible substrate region (30d) of a plastic film (30) of a
multilayer stack (100) are divided, the interface between the
flexible substrate region (30d) and a glass base (10) is irradiated
with lift-off light. The multilayer stack (100) is separated into
the first portion (110) and the second portion (120) while the
multilayer stack (100) is kept in contact with the stage (210). The
first portion (110) includes a plurality of light-emitting devices
(1000) which are in contact with the stage (210). The
light-emitting devices (1000) include a plurality of functional
layer regions (20) and the flexible substrate region (30d). The
second portion (120) includes the glass base (10) and the
intermediate region (30i). The step of irradiating with the
lift-off light includes forming the lift-off light from a plurality
of arrayed light sources such that the irradiation intensity of the
lift-off light for at least part of the interface between the
intermediate region (30i) and the glass base (10) is lower than the
irradiation intensity of the lift-off light for the interface
between the flexible substrate region (30d) and the glass base
(10).
Inventors: |
KISHIMOTO; KATSUHIKO;
(Osaka, JP) ; TANAKA; KOHICHI; (Osaka,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAKAI DISPLAY PRODUCTS CORPORATION |
Osaka |
|
JP |
|
|
Appl. No.: |
17/522861 |
Filed: |
November 9, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16968049 |
Oct 8, 2020 |
11205770 |
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|
PCT/JP2018/017899 |
May 9, 2018 |
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17522861 |
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International
Class: |
H01L 51/56 20060101
H01L051/56; H01L 27/15 20060101 H01L027/15; H01L 51/00 20060101
H01L051/00 |
Claims
1. An apparatus for producing a flexible light-emitting device,
comprising: a stage for supporting a multilayer stack which has a
first surface and a second surface, the multilayer stack including
a glass base which defines the first surface, a functional layer
region including a Thin Film Transistor (TFT) layer and a
light-emitting device layer, a synthetic resin film provided
between the glass base and the functional layer region and bound to
the glass base, the synthetic resin film including a flexible
substrate region supporting the functional layer region and an
intermediate region surrounding the flexible substrate region, and
a protection sheet which covers the functional layer region and
which defines the second surface, the intermediate region and the
flexible substrate region of the synthetic resin film being divided
from each other; and a lift-off light irradiation unit for
irradiating with lift-off light an interface between the synthetic
resin film and the glass base in the multilayer stack supported by
the stage, wherein the lift-off light irradiation unit includes a
plurality of arrayed light sources for forming the lift-off light,
and the lift-off light irradiation unit configured to: reduce an
irradiation intensity of the lift-off light for at least part of an
interface between the intermediate region of the synthetic resin
film and the glass base below a threshold level Th of the
irradiation intensity which is necessary for delamination;
irradiate the at least part of the interface between the
intermediate region of the synthetic resin film and the glass base
with the lift-off light; and irradiate the interface between the
flexible substrate region of the synthetic resin film and the glass
base with the lift-off light whose irradiation intensity is higher
than threshold level Th.
2. The apparatus of claim 1, wherein each of the plurality of light
sources is an incoherent light source.
3. The apparatus of claim 1, wherein the light-emitting device
layer includes a plurality of arrayed micro Light-Emitting Diodes
(LEDs), and each of the plurality of light sources is a
semiconductor laser device.
4. The apparatus of claim 1, wherein the plurality of light sources
are a plurality of light-emitting diode devices, and the lift-off
light irradiation unit includes a driving circuit for modulating a
driving current flowing through each of the plurality of
light-emitting diode devices, thereby temporally and/or spatially
modulating the irradiation intensity of the lift-off light.
5. The apparatus of claim 4, wherein the plurality of
light-emitting diode devices are arranged in a single row or a
plurality of rows, and the irradiation intensity of the lift-off
light has four or more peaks at the interface between the
intermediate region of the synthetic resin film and the glass
base.
6. The apparatus of claim 5, wherein an array pitch of the
plurality of light-emitting diode devices is in the range of not
less than 3 mm and not more than 10 mm.
7. The apparatus of claim 1, further comprising an actuator for
increasing a distance from the stage to the glass base while the
stage is kept in contact with the second surface of the multilayer
stack, thereby separating the multilayer stack into a first portion
and a second portion, wherein the first portion of the multilayer
stack includes a light-emitting device which is in contact with the
stage, the light-emitting device including the functional layer
region and the flexible substrate region of the synthetic resin
film, and the second portion of the multilayer stack includes the
glass base and the intermediate region of the synthetic resin film.
Description
TECHNICAL FIELD
[0001] The present disclosure relates to a method and apparatus for
producing a flexible light-emitting device.
BACKGROUND ART
[0002] A typical example of the flexible display includes a film
which is made of a synthetic resin such as polyimide (hereinafter,
referred to as "plastic film"), and elements supported by the
plastic film, such as TFTs (Thin Film Transistors) and OLEDs
(Organic Light Emitting Diodes). The plastic film functions as a
flexible substrate. The flexible display is encapsulated with a gas
barrier film (encapsulation film) because an organic semiconductor
layer which is a constituent of the OLED is likely to deteriorate
due to water vapor.
[0003] Production of the above-described flexible display is
carried out using a glass base on which a plastic film is formed
over the upper surface. The glass base functions as a support
(carrier) for keeping the shape of the plastic film flat during the
production process. TFT devices, light-emitting devices such as
OLEDs, a gas barrier film, and the other constituents are formed on
the plastic film, whereby the structure of a flexible display is
realized while it is supported by the glass base. Thereafter, the
flexible display is delaminated from the glass base and gains
flexibility. The entirety of a portion in which TFT devices and
light-emitting devices such as OLEDs are arrayed can be referred to
as "functional layer region".
[0004] According to the prior art, a sheet-like structure including
a plurality of flexible displays is delaminated from a glass base,
and thereafter, optical parts and other constituents are mounted to
this sheet-like structure. Thereafter, the sheet-like structure is
divided into a plurality of flexible devices. This dividing is
realized by, for example, laser beam irradiation.
[0005] Patent Document No. 1 discloses the method of irradiating
the interface between each flexible display and the glass base with
laser light in order to delaminate each flexible display from the
glass base (supporting substrate). According to the method
disclosed in Patent Document No. 1, after irradiation with the
lift-off light, respective flexible displays are divided from one
another, and each of the flexible displays is delaminated from the
glass base.
CITATION LIST
Patent Literature
[0006] Patent Document No. 1: Japanese Laid-Open Patent Publication
No. 2014-48619
SUMMARY OF INVENTION
Technical Problem
[0007] According to the conventional production method, the
dividing by means of laser beam irradiation is carried out after
expensive parts, for example, encapsulation film, polarizer, and/or
heat radiation sheet, are mounted to a sheet-like structure
including a plurality of flexible displays. Therefore, unnecessary
portions divided by laser beam irradiation, i.e., portions which
are not to be constituents of a final display, are quite useless.
Also, there is a problem that, after being delaminated from the
glass base, it is difficult to handle a plurality of flexible
displays which have no rigidity.
[0008] Such a problem is not limited to flexible displays which
include OLEDs as light-emitting devices but can arise in producing
a flexible light-emitting device which includes a micro LED (PLED)
formed as a light-emitting device using inorganic semiconductor
materials.
[0009] The present disclosure provides a method and apparatus for
producing a flexible light-emitting device which are capable of
solving the above-described problems.
Solution to Problem
[0010] The flexible light-emitting device production method of the
present disclosure includes, in an exemplary embodiment: providing
a multilayer stack which has a first surface and a second surface,
the multilayer stack including a glass base which defines the first
surface, a functional layer region including a TFT layer and a
light-emitting device layer, a synthetic resin film provided
between the glass base and the functional layer region and bound to
the glass base, the synthetic resin film including a flexible
substrate region supporting the functional layer region and an
intermediate region surrounding the flexible substrate region, and
a protection sheet which covers the functional layer region and
which defines the second surface, dividing the intermediate region
and the flexible substrate region of the synthetic resin film from
each other, irradiating an interface between the synthetic resin
film and the glass base with lift-off light, and separating the
multilayer stack into a first portion and a second portion by
increasing a distance from a stage to the glass base while the
second surface of the multilayer stack is kept in contact with the
stage, wherein the first portion of the multilayer stack includes a
light-emitting device which is in contact with the stage, the
light-emitting device including the functional layer region and the
flexible substrate region of the synthetic resin film, the second
portion of the multilayer stack includes the glass base and the
intermediate region of the synthetic resin film, and irradiating
the interface between the synthetic resin film and the glass base
with the lift-off light includes forming the lift-off light from a
plurality of arrayed light sources such that an irradiation
intensity of the lift-off light for at least part of an interface
between the intermediate region of the synthetic resin film and the
glass base is lower than an irradiation intensity of the lift-off
light for the interface between the flexible substrate region of
the synthetic resin film and the glass base.
[0011] In one embodiment, the lift-off light is incoherent
light.
[0012] In one embodiment, the light-emitting device layer includes
a plurality of arrayed micro LEDs, and the lift-off light is laser
light.
[0013] In one embodiment, a number of the flexible substrate region
of the synthetic resin film is plural, and a number of the
light-emitting device included in the first portion of the
multilayer stack is plural.
[0014] In one embodiment, the plurality of light sources are a
plurality of light emitting diode devices, and irradiating the
interface between the synthetic resin film and the glass base with
the lift-off light includes modulating a driving current flowing
through each of the plurality of light emitting diode devices,
thereby temporally and/or spatially modulating the irradiation
intensity of the lift-off light.
[0015] In one embodiment, the plurality of light emitting diode
devices are arranged in a single row or a plurality of rows, and
the irradiation intensity of the lift-off light has four or more
peaks at the interface between the intermediate region of the
synthetic resin film and the glass base.
[0016] In one embodiment, the lift-off light is a line beam
extending in a first direction which is parallel to a perimeter of
the glass base, and irradiating the interface between the synthetic
resin film and the glass base with the lift-off light includes
moving an irradiation region on the interface which is to be
irradiated with the lift-off light in a second direction which is
transverse to the first direction.
[0017] In one embodiment, the lift-off light is planar light
extending in a first direction which is parallel to a perimeter of
the glass base and a second direction which is transverse to the
first direction, and irradiating the interface between the
synthetic resin film and the glass base with the lift-off light
includes keeping stationary or moving an irradiation region formed
by the lift-off light on the interface.
[0018] In one embodiment, the at least part of the interface
between the intermediate region of the synthetic resin film and the
glass base includes a plurality of parallel stripe regions
extending in the first direction.
[0019] In one embodiment, the at least part of the interface
between the intermediate region of the synthetic resin film and the
glass base includes a plurality of parallel stripe regions
extending in the second direction.
[0020] In one embodiment, the at least part of the interface
between the intermediate region of the synthetic resin film and the
glass base has a width which is not less than 50% of a width of the
intermediate region.
[0021] In one embodiment, the at least part of the interface
between the intermediate region of the synthetic resin film and the
glass base has a width which is not less than 1 mm.
[0022] In one embodiment, the difference between an irradiation
intensity of the lift-off light in the at least part of the
interface between the intermediate region of the synthetic resin
film and the glass base and an irradiation intensity of the
lift-off light for the interface between the flexible substrate
region of the synthetic resin film and the glass base is not less
than 50 mJ/cm.sup.2.
[0023] In one embodiment, the method further includes, after
separating the multilayer stack into the first portion and the
second portion, performing a process on the light-emitting device
which is in contact with the stage.
[0024] The flexible light-emitting device production apparatus of
the present disclosure includes, in an exemplary embodiment: a
stage for supporting a multilayer stack which has a first surface
and a second surface, the multilayer stack including a glass base
which defines the first surface, a functional layer region
including a TFT layer and a light-emitting device layer, a
synthetic resin film provided between the glass base and the
functional layer region and bound to the glass base, the synthetic
resin film including a flexible substrate region supporting the
functional layer region and an intermediate region surrounding the
flexible substrate region, and a protection sheet which covers the
functional layer region and which defines the second surface, the
intermediate region and the flexible substrate region of the
synthetic resin film being divided from each other, and a lift-off
light irradiation unit for irradiating with lift-off light an
interface between the synthetic resin film and the glass base in
the multilayer stack supported by the stage, wherein the lift-off
light irradiation unit includes a plurality of arrayed light
sources for forming the lift-off light, and an irradiation
intensity of the lift-off light for at least part of an interface
between the intermediate region of the synthetic resin film and the
glass base is lower than an irradiation intensity of the lift-off
light for the interface between the flexible substrate region of
the synthetic resin film and the glass base.
[0025] In one embodiment, each of the plurality of light sources is
an incoherent light source.
[0026] In one embodiment, the light-emitting device layer includes
a plurality of arrayed micro LEDs, and each of the plurality of
light sources is a semiconductor laser device.
[0027] In one embodiment, the plurality of light sources are a
plurality of light emitting diode devices, and the lift-off light
irradiation unit includes a driving circuit for modulating a
driving current flowing through each of the plurality of light
emitting diode devices, thereby temporally and/or spatially
modulating the irradiation intensity of the lift-off light.
[0028] In one embodiment, the plurality of light emitting diode
devices are arranged in a single row or a plurality of rows, and
the irradiation intensity of the lift-off light has four or more
peaks at the interface between the intermediate region of the
synthetic resin film and the glass base.
[0029] In one embodiment, an array pitch of the plurality of light
emitting diode devices is in the range of not less than 3 mm and
not more than 10 mm.
[0030] In one embodiment, the apparatus further includes an
actuator for increasing a distance from the stage to the glass base
while the stage is kept in contact with the second surface of the
multilayer stack, thereby separating the multilayer stack into a
first portion and a second portion, wherein the first portion of
the multilayer stack includes a light-emitting device which is in
contact with the stage, the light-emitting device including the
functional layer region and the flexible substrate region of the
synthetic resin film, and the second portion of the multilayer
stack includes the glass base and the intermediate region of the
synthetic resin film.
Advantageous Effects of Invention
[0031] According to an embodiment of the present invention, a novel
method for producing a flexible light-emitting device which is
capable of solving the above-described problems is provided.
BRIEF DESCRIPTION OF DRAWINGS
[0032] FIG. 1A is a plan view showing a configuration example of a
multilayer stack used in a flexible light-emitting device
production method of the present disclosure.
[0033] FIG. 1B is a cross-sectional view of the multilayer stack
taken along line B-B of FIG. 1A.
[0034] FIG. 1C is a cross-sectional view showing another example of
the multilayer stack.
[0035] FIG. 1D is a cross-sectional view showing still another
example of the multilayer stack.
[0036] FIG. 2 is a cross-sectional view schematically showing the
dividing positions in the multilayer stack.
[0037] FIG. 3A is a diagram schematically showing a state
immediately before a stage supports a multilayer stack.
[0038] FIG. 3B is a diagram schematically showing a state where the
stage supports the multilayer stack.
[0039] FIG. 3C is a diagram schematically showing that the
interface between a glass base and a plastic film of the multilayer
stack with lift-off light.
[0040] FIG. 4 is a perspective view schematically showing
irradiation of a multilayer stack with laser light (lift-off light)
emitted from a laser light source of a lift-off light irradiation
unit.
[0041] FIG. 5 is a block diagram schematically showing the flow of
signals, data and instructions in the lift-off light irradiation
unit.
[0042] FIG. 6 is a perspective view schematically showing a basic
configuration of a semiconductor laser device which can be used in
a line beam source.
[0043] FIG. 7A is a diagram schematically showing a configuration
example of a line beam source and an example of the light intensity
distribution of laser light emitted from a semiconductor laser
device during scanning.
[0044] FIG. 7B is a diagram schematically showing a configuration
example of a line beam source and another example of the light
intensity distribution of laser light emitted from a semiconductor
laser device during scanning.
[0045] FIG. 8 is a perspective view schematically showing another
configuration example of the line beam source.
[0046] FIG. 9 is a diagram schematically showing an example of the
distribution in the Y-axis direction of the irradiation intensity
of the lift-off light.
[0047] FIG. 10 is a diagram schematically showing another example
of the distribution in the Y-axis direction of the irradiation
intensity of the lift-off light.
[0048] FIG. 11 is a diagram schematically showing still another
example of the distribution in the Y-axis direction of the
irradiation intensity of the lift-off light.
[0049] FIG. 12 is a diagram schematically showing still another
example of the distribution in the Y-axis direction of the
irradiation intensity of the lift-off light.
[0050] FIG. 13 is a diagram schematically showing an example of the
distribution in the X-axis direction (scanning direction) of the
irradiation intensity of the lift-off light.
[0051] FIG. 14 is a diagram schematically showing another example
of the distribution in the X-axis direction of the irradiation
intensity of the lift-off light.
[0052] FIG. 15A is a diagram schematically showing still another
example of the distribution in the X-axis direction of the
irradiation intensity of the lift-off light.
[0053] FIG. 15B is a diagram schematically showing still another
example of the distribution in the X-axis direction of the
irradiation intensity of the lift-off light.
[0054] FIG. 16A is a cross-sectional view schematically showing the
multilayer stack before the multilayer stack is separated into the
first portion and the second portion after irradiation with
lift-off light.
[0055] FIG. 16B is a cross-sectional view schematically showing the
multilayer stack separated into the first portion and the second
portion.
[0056] FIG. 17 is a perspective view showing the glass base
separated from the multilayer stack by a delaminating
apparatus.
[0057] FIG. 18 is a perspective view showing removal of the glass
base from the stage.
[0058] FIG. 19 is a perspective view showing the stage from which
the glass base has been removed.
[0059] FIG. 20 is a cross-sectional view showing the stage from
which the glass base has been removed.
[0060] FIG. 21 is a cross-sectional view showing flexible
light-emitting devices detached from the stage.
[0061] FIG. 22 is a cross-sectional view showing another protection
sheet bound to a plurality of light-emitting devices which are in
contact with the stage.
[0062] FIG. 23 is a cross-sectional view showing a carrier sheet
carrying a plurality of parts which are to be mounted to the
plurality of light-emitting devices.
[0063] FIG. 24A is a cross-sectional view illustrating a step of
the flexible light-emitting device production method in an
embodiment of the present disclosure.
[0064] FIG. 24B is a cross-sectional view illustrating a step of
the flexible light-emitting device production method in an
embodiment of the present disclosure.
[0065] FIG. 24C is a cross-sectional view illustrating a step of
the flexible light-emitting device production method in an
embodiment of the present disclosure.
[0066] FIG. 24D is a cross-sectional view illustrating a step of
the flexible light-emitting device production method in an
embodiment of the present disclosure.
[0067] FIG. 25 is an equivalent circuit diagram of a single
sub-pixel in a flexible light-emitting device.
[0068] FIG. 26 is a perspective view of the multilayer stack in the
middle of the production process.
[0069] FIG. 27A is a diagram schematically showing the upper
surface of a line beam source 214 which includes a single column of
light emitting diode devices arrayed in Y-axis direction.
[0070] FIG. 27B is a cross-sectional view of the line beam source
shown in FIG. 27A taken along line B-B.
[0071] FIG. 27C is a diagram showing the moving direction of the
line beam source relative to the multilayer stack 100.
[0072] FIG. 28A is a diagram schematically showing the upper
surface of a line beam source 214 which includes a plurality of
columns of light emitting diode devices arrayed in Y-axis
direction.
[0073] FIG. 28B is a cross-sectional view of the line beam source
shown in FIG. 28A taken along line B-B.
[0074] FIG. 28C is a diagram showing the moving direction of the
line beam source relative to the multilayer stack.
[0075] FIG. 28D is a plan view schematically showing irradiation
regions the line beam source of FIG. 28A is forming.
[0076] FIG. 28E is a plan view showing an example of irradiation
regions formed by temporarily modulating the electric current
flowing through each of the light emitting diode devices during
scanning by the line beam source.
[0077] FIG. 29 is a top view schematically showing an example of
the surface-emission light source in which a large number of light
emitting diode devices are arrayed in a matrix.
[0078] FIG. 30 is a top view schematically showing another example
of the surface-emission light source in which a large number of
light emitting diode devices are arrayed in a matrix.
DESCRIPTION OF EMBODIMENTS
[0079] An embodiment of a method and apparatus for producing a
flexible light-emitting device of the present disclosure is
described with reference to the drawings. Examples of the
"light-emitting device" include displays and illumination devices.
In the following description, unnecessarily detailed description
will be omitted. For example, detailed description of well-known
matter and repetitive description of substantially identical
elements will be omitted. This is for the purpose of avoiding the
following description from being unnecessarily redundant and
assisting those skilled in the art to easily understand the
description. The present inventors provide the attached drawings
and the following description for the purpose of assisting those
skilled in the art to fully understand the present disclosure.
Providing these drawings and description does not intend to limit
the subject matter recited in the claims.
[0080] <Multilayer Stack>
[0081] See FIG. 1A and FIG. 1B. In a flexible light-emitting device
production method of the present embodiment, firstly, a multilayer
stack 100 illustrated in FIG. 1A and FIG. 1B is provided. FIG. 1A
is a plan view of the multilayer stack 100. FIG. 1B is a
cross-sectional view of the multilayer stack 100 taken along line
B-B of FIG. 1A. In FIG. 1A and FIG. 1B, an XYZ coordinate system
with X-axis, Y-axis and Z-axis, which are perpendicular to one
another, is shown for reference.
[0082] The multilayer stack 100 includes a glass base (motherboard
or carrier) 10, a plurality of functional layer regions 20 each
including a TFT layer 20A and a light-emitting device layer 20B, a
synthetic resin film (hereinafter, simply referred to as "plastic
film") 30 provided between the glass base 10 and the plurality of
functional layer regions 20 and bound to the glass base 10, and a
protection sheet 50 covering the plurality of functional layer
regions 20. The multilayer stack 100 further includes a gas barrier
film 40 provided between the plurality of functional layer regions
20 and the protection sheet 50 so as to cover the entirety of the
functional layer regions 20. The multilayer stack 100 may include
another unshown layer, such as a buffer layer.
[0083] In the present embodiment, the light-emitting device layer
20B includes, for example, a plurality of OLED devices which are
two-dimensionally arrayed. In the present disclosure, the
"light-emitting device layer" refers to a two-dimensional array of
light-emitting devices. Each of the light-emitting devices is not
limited to an OLED device but may be a micro LED device. In the
present embodiment, a typical example of the flexible
light-emitting device is a "flexible display" but may be a
"flexible illumination device".
[0084] The first surface 100a of the multilayer stack 100 is
defined by the glass base 10. The second surface 100b of the
multilayer stack 100 is defined by the protection sheet 50. The
glass base 10 and the protection sheet 50 are materials temporarily
used in the production process but are not constituents of a final
flexible light-emitting device.
[0085] The plastic film 30 shown in the drawings includes a
plurality of flexible substrate regions 30d respectively supporting
the plurality of functional layer regions 20, and an intermediate
region 30i surrounding each of the flexible substrate regions 30d.
The flexible substrate regions 30d and the intermediate region 30i
are merely different portions of a single continuous plastic film
30 and do not need to be physically distinguished. In other words,
regions of the plastic film 30 lying immediately under respective
ones of the functional layer regions 20 are the flexible substrate
regions 30d, and the other region of the plastic film 30 is the
intermediate region 30i.
[0086] Each of the plurality of functional layer regions is a
constituent of a panel of a final flexible light-emitting device
(e.g., display panel). In other words, the multilayer stack 100 has
such a structure that a plurality of flexible light-emitting
devices which are not yet divided from one another are supported by
a single glass base 10. Each of the functional layer regions 20 has
such a shape that, for example, the thickness (size in Z-axis
direction) is several tens of micrometers, the length (size in
X-axis direction) is about 12 cm, and the width (size in Y-axis
direction) is about 7 cm. These sizes can be set to arbitrary
values according to the required largeness of the display screen or
emission surface region. The shape in the XY plane of each of the
functional layer regions 20 is rectangular in the example
illustrated in the drawings but is not limited to this example. The
shape in the XY plane of each of the functional layer regions 20
may include a square, a polygon, or a shape which includes a curve
in the contour.
[0087] As shown in FIG. 1A, the flexible substrate regions 30d are
two-dimensionally arrayed in rows and columns according to the
arrangement of the flexible light-emitting devices. The
intermediate region 30i consists of a plurality of stripes
perpendicular to one another and forms a grid pattern. The width of
the stripes is, for example, about 1-4 mm. The flexible substrate
region 30d of the plastic film 30 functions as the "flexible
substrate" in each flexible light-emitting device which is in the
form of a final product. Meanwhile, the intermediate region 30i of
the plastic film 30 is not a constituent of the final product.
[0088] In an embodiment of the present disclosure, the
configuration of the multilayer stack 100 is not limited to the
example illustrated in the drawings. The number of functional layer
regions 20 (the number of light-emitting devices) supported by a
single glass base 10 does not need to be plural but may be
singular. If the number of functional layer regions 20 is singular,
the intermediate region 30i of the plastic film 30 forms a simple
frame pattern surrounding a single functional layer region 20.
[0089] The size or proportion of each component illustrated in
respective drawings is determined from the viewpoint of
understandability. The actual size or proportion is not necessarily
reflected in the drawings.
[0090] The multilayer stack 100 which can be used in the production
method of the present disclosure is not limited to the example
illustrated in FIG. 1A and FIG. 1B. FIG. 1C and FIG. 1D are
cross-sectional views showing other examples of the multilayer
stack 100. In the example illustrated FIG. 1C, the protection sheet
50 covers the entirety of the plastic film 30 and extends outward
beyond the plastic film 30. In the example illustrated FIG. 1D, the
protection sheet 50 covers the entirety of the plastic film 30 and
extends outward beyond the glass base 10. As will be described
later, after the glass base 10 is separated from the multilayer
stack 100, the multilayer stack 100 is a thin flexible sheet-like
structure which has no rigidity. The protection sheet 50 serves to
protect the functional layer regions 20 from impact and abrasion
when the functional layer regions 20 collide with or come into
contact with external apparatuses or instruments in the step of
delaminating the glass base 10 and the steps after the
delaminating. Since the protection sheet 50 is peeled off from the
multilayer stack 100 in the end, a typical example of the
protection sheet 50 has a laminate structure which includes an
adhesive layer of a relatively small adhesive force (a layer of an
applied mold-releasing agent) over its surface. The more detailed
description of the multilayer stack 100 will be described
later.
[0091] <Dividing of Light-Emitting Devices>
[0092] According to the flexible light-emitting device production
method of the present embodiment, after the step of providing the
above-described multilayer stack 100, the step of dividing an
intermediate region 30i and respective ones of a plurality of
flexible substrate regions 30d of the plastic film 30 from one
another is carried out.
[0093] FIG. 2 is a cross-sectional view schematically showing the
positions for dividing the intermediate region 30i and respective
ones of the plurality of flexible substrate regions 30d of the
plastic film 30 from one another. The positions of irradiation
extend along the periphery of each of the flexible substrate
regions 30d. In FIG. 2, the positions indicated by arrows are
irradiated with a laser beam for cutting. Part of the multilayer
stack 100 exclusive of the glass base 10 is cut into a plurality of
light-emitting devices (e.g., display panels) 1000 and the
remaining unnecessary portions. By cutting, a gap of several tens
of micrometers to several hundreds of micrometers is formed between
each of the light-emitting devices 1000 and a portion surrounding
the light-emitting device 1000. The cutting can also be realized by
a cutter which has a fixed blade or a rotary blade instead of the
laser beam irradiation. After the cutting, the light-emitting
devices 1000 and the remaining unnecessary portions are still bound
to the glass base 10.
[0094] When the cutting is realized by a laser beam, the wavelength
of the laser beam may be in any of the infrared, visible and
ultraviolet bands. From the viewpoint of reducing the effect of the
cutting on the glass base 10, the laser beam desirably has a
wavelength in the range of green to ultraviolet. For example, when
a Nd:YAG laser apparatus is used, the cutting can be carried out
using a second harmonic wave (wavelength: 532 nm) or a third
harmonic wave (wavelength: 343 nm or 355 nm). In such a case, the
laser power is adjusted to 1 to 3 watts, and the scanning rate is
set to about 500 mm per second, so that the multilayer structure
supported by the glass base 10 can be cut (divided) into
light-emitting devices and unnecessary portions without damaging
the glass base 10.
[0095] According to the embodiment of the present disclosure, the
timing of the above-described cutting is earlier than in the prior
art. Since the cutting is carried out while the plastic film 30 is
bound to the glass base 10, alignment for the cutting can be made
with high precision and accuracy even if the gap between adjoining
light-emitting devices 1000 is narrow. Thus, the gap between
adjoining light-emitting devices 1000 can be shortened, and
accordingly, useless portions which are unnecessary for a final
product can be reduced. In the prior art, after the delaminating
from the glass base 10, a polarizer, a heat radiation sheet, and/or
an electromagnetic shield can be adhered to the plastic film 30 so
as to cover the entirety of the surface (delaminated surface) of
the plastic film 30. In such a case, the polarizer, the heat
radiation sheet, and/or the electromagnetic shield are also divided
by cutting into portions covering the light-emitting devices 1000
and the remaining unnecessary portions. The unnecessary portions
are disposed of as waste. On the other hand, according to the
production method of the present disclosure, production of such
waste can be suppressed as will be described later.
[0096] <Lift-Off Light Irradiation>
[0097] After the intermediate region 30i and respective ones of the
plurality of flexible substrate regions 30d of the plastic film 30
are divided from one another, the step of irradiating the interface
between the flexible substrate regions 30d of the plastic film 30
and the glass base 10 with lift-off light is carried out using a
lift-off light irradiation unit.
[0098] FIG. 3A schematically shows a state immediately before the
stage 210 supports the multilayer stack 100. In the present
embodiment, the stage 210 is a chuck stage which has a large number
of pores in the surface for suction. The multilayer stack 100 is
arranged such that the second surface 100b of the multilayer stack
100 faces the surface 2105 of the stage 210, and is supported by
the stage 210.
[0099] FIG. 3B schematically shows a state where the stage 210
supports the multilayer stack 100. The arrangement of the stage 210
and the multilayer stack 100 is not limited to the example
illustrated in the drawing. For example, the multilayer stack 100
may be placed upside down such that the stage 210 is present under
the multilayer stack 100.
[0100] In the example illustrated in FIG. 3B, the multilayer stack
100 is in contact with the surface 2105 of the stage 210, and the
stage 210 holds the multilayer stack 100 by suction.
[0101] Then, as shown in FIG. 3C, the interface between the plastic
film 30 and the glass base 10 is irradiated with lift-off light
216. FIG. 3C schematically illustrates irradiation of the interface
between the glass base 10 and the plastic film 30 of the multilayer
stack 100 with the lift-off light 216 in the shape of a line
extending in a direction vertical to the sheet of the drawing. A
part of the plastic film 30 at the interface between the glass base
10 and the plastic film 30 absorbs the lift-off light 216 and
decomposes (disappears). By scanning the above-described interface
with the lift-off light 216, the degree of binding of the plastic
film 30 to the glass base 10 is reduced. The wavelength of the
lift-off light 216 is typically in the ultraviolet band. The
wavelength of the lift-off light 216 is selected such that the
lift-off light 216 is hardly absorbed by the glass base 10 but is
absorbed by the plastic film 30 as much as possible. The light
absorption by the glass base 10 is, for example, about 10% in the
wavelength range of 343-355 nm but can increase to 30-60% at 308
nm.
[0102] Hereinafter, lift-off light irradiation according to the
present embodiment is described in detail.
[0103] <Lift-Off Light Irradiation Unit 1>
[0104] In the present embodiment, the lift-off light irradiation
unit includes a line beam source for emitting lift-off light 216.
The line beam source includes a laser apparatus and a plurality of
arranged laser light sources. In the present embodiment, a typical
example of the laser light sources is a semiconductor laser device
(laser diode, also referred to as "LD"). In contrast, a typical
example of a conventional lift-off light irradiation unit is a
combination of a gas laser apparatus such as excimer laser or a
solid state laser apparatus such as YAG laser and an optical system
consisting of lenses and prisms for reshaping laser light in the
form of a spot beam emitted from the laser apparatus into a line
beam. In the present disclosure, the lift-off light irradiation
unit is simply referred to as "delaminating apparatus". Note that,
in conventional delaminating apparatuses, if the line length of a
line beam to be produced is 1 m or more, the optical system for
reshaping the laser light is too big to construct and, accordingly,
deterioration of the quality (uniformity) of the line beam is
inevitable. Thus, the longest possible line beam has a length
corresponding to the G6H substrate size (the shorter side of a 1800
mm.times.750 mm rectangle), i.e., a beam length up to about 750
mm.
[0105] FIG. 4 is a perspective view schematically showing
irradiation of the multilayer stack 100 with a line beam (lift-off
light 216) emitted from the line beam source 214 of a delaminating
apparatus 220 of the present embodiment. For the sake of
understandability, the stage 210, the multilayer stack 100 and the
line beam source 214 are shown as being spaced away from one
another in the Z-axis direction of the drawing. During irradiation
with the lift-off light 216, the second surface 100b of the
multilayer stack 100 is in contact with the stage 210. When a
plurality of thus-arrayed laser light sources are used, the line
length of the lift-off light in the shape of a line beam can easily
be 1 m or more, and the delaminating apparatus is applicable to
G8-size substrates (2400 mm.times.2200 mm) or huge substrates of
still larger sizes, to which conventional delaminating apparatuses
are not applicable.
[0106] The delaminating apparatus 220 illustrated in FIG. 4
includes a transporting device 230 for moving the line beam source
214 such that the irradiation position of the line beam on the
multilayer stack 100 moves in a direction transverse to the line
beam (scanning direction). The transporting device 230 illustrated
in the drawing includes a supporting base 270 and a guide 246 for
guiding the movement of the line beam source 214. The transporting
device 230 includes an actuator such as, for example, a motor and
is capable of conveying the line beam source 214. The motor may be
a rotating electric machine, such as DC motor, three-phase AC
motor, stepping motor, or may be a linear motor or an ultrasonic
motor. When an ultrasonic motor is used, highly-accurate
positioning is possible as compared with the other types of motors.
Further, the ultrasonic motor provides large holding power when it
is not moving, and can hold without supply of electric power.
Therefore, the heat generation is small when it is not moving.
[0107] Next, see FIG. 5. FIG. 5 is a block diagram schematically
showing the flow of signals, data and instructions in the
delaminating apparatus 220.
[0108] The controller 260 is typically a computer. A part or the
entirety of the controller 260 can be a general-purpose or
special-purpose computer system. The computer system includes an OS
(operating system) and, when necessary, hardware devices such as
peripheral devices. The controller 260 is connected with a memory
274 which is a computer-readable storage medium. In the memory 274,
a program is stored which defines the operation of the delaminating
apparatus 220.
[0109] In FIG. 5, for the sake of simplicity, a single memory unit
is shown. However, the actual memory 274 can consist of a plurality
of storage devices of an identical type or different types. A part
of the memory 274 may be a nonvolatile memory while the other part
may be a random access memory. A part or the entirety of the memory
274 may be an easily-detachable optical disc or solid-state
recording element or may be a cloud-type storage on a net
multilayer stack.
[0110] The controller 260 is connected with a sensor 276, such as
temperature sensor and image sensor. Such a sensor 276 enables
detection of the irradiation position of the line beam on the
multilayer stack 100 or monitoring of a physical or chemical change
in the multilayer stack 100 which can be caused by irradiation.
[0111] The controller 260 follows the program stored in the memory
274 and issues appropriate instructions to a laser driving circuit
(LD driving circuit) 280 and a transporting device driving circuit
290, when necessary, based on the output of the sensor 276. The LD
driving circuit 280 adjusts the irradiation intensity of the line
beam emitted from the line beam source 214 according to the
instruction from the controller 260. The transporting device
driving circuit 290 adjusts the operation of the transporting
device 230 according to the instruction from the controller
260.
[0112] The transporting device driving circuit 290 controls, for
example, the rotation angle and the rotation speed of the motor in
order to adjust the mutual positional relationship between the line
beam source 214 and the stage 210. In this example, for the sake of
simplicity, the line beam source 214 moves in the X-axis direction
while the stage 210 is fixed, although the delaminating apparatus
of the present embodiment is not limited to this example. The stage
210 may move while the line beam source 214 is fixed.
Alternatively, both the stage 210 and the line beam source 214 may
move in an identical direction or in different directions. When the
stage 210 moves while the stage 210 supports a heavy-weight
multilayer stack 100, a bearing such as, for example, air slider
can be used.
[0113] The line beam source 214 includes a plurality of arranged
semiconductor laser devices. Each of the semiconductor laser
devices is connected with an LD driving circuit 280. The LD driving
circuit 280 receives an electric signal from a photodiode for
monitoring, which will be described later, and adjusts the optical
power of the semiconductor laser device to a predetermined
level.
[0114] <Semiconductor Laser Device>
[0115] FIG. 6 is a perspective view schematically showing a basic
configuration of a semiconductor laser device which can be used in
the line beam source 214. The semiconductor laser device 300 shown
in FIG. 6 includes a semiconductor multilayer stack 322 which has a
facet 326a. The facet 326a includes an emission region (emitter)
324 from which laser light is to be emitted. In this example, the
semiconductor multilayer stack 322 is supported on a semiconductor
substrate 320 and includes a p-type cladding layer 322a, an active
layer 322b, and an n-type cladding layer 322c. On the upper surface
326b of the semiconductor multilayer stack 322, a p-side electrode
312 in the shape of a stripe is provided. On the rear surface of
the semiconductor substrate 320, an n-side electrode 316 is
provided. When an electric current which is greater than a
threshold flows through a predetermined region of the active layer
322b from the p-side electrode 312 to the n-side electrode 316,
laser oscillation occurs. The facet 326a of the semiconductor
multilayer stack 322 is covered with an unshown reflective film.
Laser light is emitted from the emission region 324 via the
reflective film.
[0116] In general, a size in the Y-axis direction of the emission
region 324, Ey, is smaller than a size in the X-axis direction of
the emission region 324, Ex. Thus, laser light emitted from the
emission region 324 diverges (spreads) in the Y-axis direction due
to a diffraction effect. According to the embodiment of the present
disclosure, formation of a line beam can be realized by utilizing
this diffraction effect. Note that an optical element, such as
lens, diffraction element, slit, may be provided over the front
surface of the emission region 324 for beam reshaping of the laser
light.
[0117] The semiconductor laser device 300 can be made of various
semiconductor materials and can have various configurations and
sizes according to the oscillation wavelength and the optical
power. When the laser light is required to have a wavelength in the
ultraviolet region (e.g., 300-350 nm), the semiconductor multilayer
stack 322 of the semiconductor laser device 300 can be suitably
made of a nitride semiconductor, such as AlGaN-based semiconductor
or InAlGaN-based semiconductor. The oscillation wavelength of the
semiconductor laser device 300 can be set within the range of, for
example, 200 nm to 350 nm. A ridge stripe may be provided in the
p-type cladding layer 322a such that light confinement in the
horizontal transverse direction is realized. The active layer 322b
may include a single or a plurality of quantum well structures. The
semiconductor multilayer stack 322 may include other semiconductor
layers, such as a light guiding layer, a buffer layer, and a
contact layer. When the substrate 320 is a sapphire substrate, the
n-side electrode 316 is provided on a side of the substrate 320 on
which the p-side electrode 312 is provided.
[0118] The configuration shown in FIG. 6 is merely a typical
example of the configuration of the semiconductor laser device 300
and is simplified for the sake of simple description. This
simplified configuration example does not limit embodiments of the
present disclosure. The line beam can also be formed using a
surface-emission type semiconductor laser device. Note that, in the
other drawings, constituents such as the n-side electrode 316 will
be omitted for the sake of simplicity.
Configuration Example of Line Beam Source
[0119] See FIG. 7A. The line beam source 214 includes a plurality
of semiconductor laser devices 300 and a plurality of supports 214A
supporting the semiconductor laser devices 300. The semiconductor
laser devices 300 and the supports 214A are held in a casing 214B.
The supports 214A may be suitably made of a good conductor of high
thermal conductivity, e.g., a metal such as copper or a ceramic
material such as aluminum nitride. The casing 214B is closed with,
for example, an unshown light-transmitting cover, whereby the
inside of the casing 214B can be shielded from the atmosphere. The
inside of the casing 214B is filled with, for example, a gas which
is inert with the semiconductor laser devices 300. Each of the
semiconductor laser devices 300 is supplied with electric power via
an unshown wire (metal wire, metal ribbon, or the like). To
suppress increase of the temperature of the semiconductor laser
devices 300 during operation, a thermoelectric cooling device (not
shown) such as Peltier device may be provided near the
semiconductor laser devices 300. The supports 214A may include an
internal channel for water cooling and fins for air cooling.
[0120] In each of the semiconductor laser devices 300, an unshown
photodiode is provided near a facet 326c of the semiconductor laser
device 300 which is opposite to the emission-side facet 326a. This
facet 326c is covered with a reflective film which has a
relatively-high reflectance. However, part of laser light
oscillating inside the semiconductor laser device 300 leaks out
from the facet 326c. This laser light leakage is detected by the
photodiode, whereby the intensity of laser light emitted from the
facet 326a can be monitored. The output of the photodiode is used
for power control as previously described.
[0121] In the example of FIG. 7A, eleven semiconductor laser
devices 300 are arranged along an identical line which is parallel
to the Y-axis. The number of semiconductor laser devices 300 is not
limited to this example but may be not more than ten or may be not
less than twelve. The smallest number is four. To form a long line
beam for irradiating a large-area region, more than 100
semiconductor laser devices 300 can be arranged on the same line.
Each of the semiconductor laser devices 300 can have the same
configuration as that of the semiconductor laser device 300 of FIG.
6. Laser light (lift-off light 216) emitted from the emission
regions 324 of respective ones of the semiconductor laser devices
300 spread in parallel to the same line so as to form a line
beam.
[0122] In FIG. 7A, a rectangular scanned surface SC which is
parallel to the XY plane and an irradiation region 218 which is
formed by laser light (lift-off light 216) on the scanned surface
SC are schematically shown. The scanned surface SC is equivalent to
the interface between the plastic film 30 and the glass base 10 in
the multilayer stack 100.
[0123] For the sake of reference, FIG. 7A shows the X-axis
direction distribution and the Y-axis direction distribution of the
irradiation intensity IS in the irradiation region 218 at a certain
time. The X-axis direction distribution of the irradiation
intensity IS is narrow and unimodal. Meanwhile, the Y-axis
direction distribution of the irradiation intensity IS has eleven
peaks because laser light emitted from respective ones of the
eleven semiconductor laser devices 300 overlap one another and
extend in the shape of a line.
[0124] As previously described, laser light emitted from each of
the semiconductor laser devices 300 has a tendency to spread in a
predetermined direction (in this example, Y-axis direction) due to
a diffraction effect. This characteristic is suitable to formation
of a line beam extending in the Y-axis direction. Meanwhile, an
optical element such as cylindrical lens may be used in order to
suppress the divergence in the X-axis direction such that the
irradiation energy per unit area (irradiation intensity expressed
in joule/cm.sup.2) is increased. When such an optical element is
used to focus the laser light in the X-axis direction, the width
(the size in the X-axis direction) of the irradiation region 218 on
the scanned surface SC can be narrowed to, for example, about 0.2
mm or smaller.
[0125] From the viewpoint of increasing the irradiation intensity
of the line beam, it is preferred to decrease the arrangement pitch
of the semiconductor laser devices 300 such that the number density
of the semiconductor laser devices 300 is increased.
[0126] Next, see FIG. 7B. FIG. 7B shows the line beam source 214
translated from the position shown in FIG. 7A in the positive
direction of the X-axis. The irradiation region 218 is also
translated according to the movement of the line beam source 214.
In the state of FIG. 7B, the power of each of the semiconductor
laser devices 300 is lower than that in the state of FIG. 7A. It is
not necessary to increase or decrease the powers of respective ones
of the semiconductor laser devices 300 at the same timing. In other
words, not only the X-axis direction distribution of the
irradiation intensity IS but also the Y-axis direction distribution
can be variously changed during the scanning with the line
beam.
[0127] By using the thus-arranged plurality of semiconductor laser
devices 300, the power of the semiconductor laser devices 300 can
be temporally and/or spatially modulated according to the position
of the irradiation region 218. Thus, the distribution of the
irradiation intensity across the scanned surface SC can be
controlled.
[0128] FIG. 8 is a perspective view schematically showing another
configuration example of the line beam source 214 that includes a
plurality of semiconductor laser devices 300. In this example, the
semiconductor laser devices 300 arranged in two rows have a stagger
pattern (staggered arrangement). By reducing the distance between
the centers of the two rows, a single line beam can be formed in
total. When the orientation of the semiconductor laser devices 300
is adjusted such that the optical axes of the semiconductor laser
devices 300 included in the first row and the optical axes of the
semiconductor laser devices 300 included in the second row
intersect with each other on the multilayer stack 100,
substantially a single line beam can be formed.
[0129] According to the "line beam source" of the embodiment of the
present disclosure, the irradiation region of the lift-off light
does not need to be a single line. The irradiation region only
needs to be continuously or discontinuously distributed in a
direction transverse to the scanning direction. In other words, it
is only necessary that the line beam source includes a plurality of
light sources arranged along a line. The number of such lines is
not limited to being singular but may be two or more.
[0130] Next, see FIG. 9. FIG. 9 is a diagram schematically showing
an example of the distribution in the Y-axis direction of the
irradiation intensity of the lift-off light 216. In the graph of
FIG. 9, the horizontal axis represents the Y-axis coordinate of the
irradiation region, and the vertical axis represents the
irradiation intensity. The irradiation intensity is expressed by
the energy density per unit area (e.g., [mJ/cm.sup.2]). In the
graph of FIG. 9, specific values of the irradiation intensity are
not shown. The irradiation intensity refers to a value in the range
of, for example, not less than 0 mJ/cm.sup.2 and not more than 500
mJ/cm.sup.2.
[0131] A curve shown by a broken line in the graph of FIG. 9
represents the distribution in the Y-axis direction of the
irradiation intensity, I(Y). The Y-axis direction distribution I(Y)
of the irradiation intensity is defined by overlapping of the light
intensity distributions of laser light emitted from the plurality
of semiconductor laser devices 300 of the line beam source 214
(e.g., FIG. 7A). The light intensity distribution of the laser
light emitted from each of the semiconductor laser devices 300 can
be reshaped using an optical element such as lens. The light
intensity distribution shown in the drawing is merely exemplary. In
FIG. 9, a straight dot-chain line represents threshold level Th of
the irradiation intensity which is necessary for delamination.
Threshold level Th is, for example, 250-300 mJ/cm.sup.2. In a
region irradiated with lift-off light at an irradiation intensity
lower than this threshold level Th, the amount of lift-off light
absorbed by the plastic film 30 is insufficient. Therefore, the
plastic film 30 in that region remains bound, without being
delaminated from the glass base 10.
[0132] In FIG. 9, a cross section of the multilayer stack 100 which
is parallel to the YZ plane is shown above the graph for reference.
The glass base 10 extends from position Y0 to position Y5. The
light-emitting device 1000 on the left-hand side resides in the
region extending from position Y1 to position Y2. The
light-emitting device 1000 on the right-hand side resides in the
region extending from position Y3 to position Y4. In other words,
the flexible substrate regions 30d of the plastic film 30
correspond to the region extending from position Y1 to position Y2
and the region extending from position Y3 to position Y4.
Meanwhile, the intermediate region 30i of the plastic film 30
corresponds to the region extending from position Y0 to position
Y1, the region extending from position Y2 to position Y3, and the
region extending from position Y4 to position Y5.
[0133] In the example of FIG. 9, the irradiation intensity
distribution I(Y) of the lift-off light is higher than threshold
level Th in a region larger than the region extending from position
Y0 to position Y5. The irradiation intensity distribution I(Y) of
the lift-off light needs to be higher than threshold level Th at
least in the region extending from position Y1 to position Y2 and
the region extending from position Y3 to position Y4. In other
words, the interface between the flexible substrate regions 30d of
the plastic film 30 and the glass base 10 needs to be irradiated
with lift-off light whose irradiation intensity exceeds threshold
level Th. In the present embodiment, the lift-off light is a line
beam which is longer than the size in the Y-axis direction of the
glass base 10. The smallest value of the irradiation intensity
distribution I(Y) of the lift-off light during the scanning is
typically 0 mJ/cm.sup.2 but may be greater than 0 mJ/cm.sup.2 so
long as it is lower than threshold level Th.
[0134] When an amorphous semiconductor is heated and crystallized
by irradiation with laser light in the shape of a line beam, the
irradiation intensity distribution is desired to be uniform in
order to achieve uniform crystallinity. On the other hand, when the
delamination in the present embodiment is carried out, the
irradiation intensity of the line beam does not need to be uniform
so long as the irradiation intensity of the lift-off light at the
interface which needs delamination exceeds threshold level Th.
[0135] In the example of FIG. 9, the irradiation intensity
distribution I(Y) of the lift-off light has many peaks, although
the embodiment of the present disclosure is not limited to such an
example. For example, as illustrated in FIG. 10, part of the
irradiation intensity distribution I(Y) of the lift-off light may
be linear. In the example of FIG. 10, the light intensity
distribution of laser light emitted from each of the semiconductor
laser devices 300 of the line beam source 214 (e.g., FIG. 7A) is
flat at the center of its optical axis, i.e., "top hat" type. If
the irradiation intensity of the lift-off light at the interface
which needs delamination exceeds threshold level Th as described
above, the irradiation intensity of the line beam does not need to
be uniform. Thus, the optical powers of the plurality of
semiconductor laser devices 300 may be different from one
another.
[0136] In the examples of FIG. 9 and FIG. 10, the interface between
the intermediate region 30i of the plastic film 30 and the glass
base 10 is also irradiated with lift-off light whose irradiation
intensity exceeds threshold level Th. The interface between the
intermediate region 30i of the plastic film 30 and the glass base
10 (e.g., the interface in the region extending from position Y0 to
position Y1) may be irradiated with lift-off light whose
irradiation intensity is lower than threshold level Th. This is
because, in the middle of the operation of the line beam source
214, the irradiation intensity for the interface between the
intermediate region 30i of the plastic film 30 and the glass base
10 can be temporarily decreased as will be described later.
[0137] The irradiation intensity distribution I(Y) of the lift-off
light does not need to exceed threshold level Th in the region
extending from position Y0 to position Y1, the region extending
from position Y2 to position Y3, and the region extending from
position Y4 to position Y5. These regions correspond to the
interface between the intermediate region 30i of the plastic film
30 and the glass base 10. In the irradiation intensity distribution
I(Y), the irradiation intensity of laser light for the interface
between the intermediate region 30i of the plastic film 30 and the
glass base 10 may be lower than the irradiation intensity of laser
light for the interface between the flexible substrate regions 30d
of the plastic film 30 and the glass base 10.
[0138] FIG. 11 and FIG. 12 show other examples of the Y-axis
direction distributions I(Y) shown in FIG. 9 and FIG. 10,
respectively.
[0139] In the example of FIG. 11, the powers of the semiconductor
laser devices provided at opposite ends of the line beam source 214
and the semiconductor laser device provided at the center of the
line beam source 214 are reduced, whereby the Y-axis direction
distribution I(Y) is made lower than threshold level Th in the
region extending from position Y0 to position Y1, the region
extending from position Y2 to position Y3, and the region extending
from position Y4 to position Y5.
[0140] In the example of FIG. 12, the emission of light from the
semiconductor laser devices provided at opposite ends of the line
beam source 214 and the semiconductor laser device provided at the
center of the line beam source 214 is stopped, whereby the Y-axis
direction distribution I(Y) is made lower than threshold level Th
in the region extending from position Y0 to position Y1, the region
extending from position Y2 to position Y3, and the region extending
from position Y4 to position Y5.
[0141] According to the embodiment of the present disclosure, the
line beam source 214 includes a plurality of laser light sources,
and therefore, the irradiation intensity in the line beam can be
spatially modulated by adjusting the power of each laser light
source. Thus, the spatial distribution of the irradiation intensity
which depends on the shape, size and arrangement of the flexible
light-emitting devices 1000 of the multilayer stack 100 can be
easily realized. If the type or design of the multilayer stack 100
to be produced is changed, the distribution of the irradiation
intensity can be flexibly modulated.
[0142] A typical example of the laser light source is a
semiconductor laser device, although the embodiment of the present
disclosure is not limited to this example. When a semiconductor
laser device is used, a small size, lightweight line beam source
can advantageously be realized. However, when the multilayer stack
100 is moved during the scanning, each of a plurality of laser
light sources may be a large laser apparatus as compared with the
semiconductor laser device. When the oscillation wavelength of the
laser light source is out of a range suitable for delamination of
the plastic film, the laser light may be converted to a harmonic
wave using a wavelength converter.
[0143] Next, see FIG. 13. FIG. 13 is a diagram schematically
showing an example of the distribution in the X-axis direction
(scanning direction) of the irradiation intensity of the lift-off
light 216. In the graph of FIG. 13, the horizontal axis represents
the X-axis coordinate of the irradiation position, and the vertical
axis represents the irradiation intensity. In the graph of FIG. 13,
the solid line represents the X-axis direction distribution I(X) of
the irradiation intensity, and a straight dot-chain line represents
threshold level Th of the irradiation intensity which is necessary
for delamination.
[0144] In FIG. 13, a cross section of the multilayer stack 100
which is parallel to the XZ plane is shown above the graph for
reference. This cross section is perpendicular to the cross section
of FIG. 9. The glass base 10 extends from position X0 to position
X5. The light-emitting device 1000 on the left-hand side in the
drawing resides in the region extending from position X1 to
position X2. The light-emitting device 1000 on the right-hand side
resides in the region extending from position X3 to position X4. In
other words, the flexible substrate regions 30d of the plastic film
correspond to the region extending from position X1 to position X2
and the region extending from position X3 to position X4.
Meanwhile, the intermediate region 30i of the plastic film 30
corresponds to the region extending from position X0 to position X1
(width: W1), the region extending from position X2 to position X3
(width: W3), and the region extending from position X4 to position
X5 (width: W2). The intermediate region 30i at the left edge of the
plastic film in FIG. 13 (width: W1) includes a region in which the
irradiation intensity is lower than threshold level Th (width: S1).
Meanwhile, the intermediate region 30i at the right edge of the
plastic film 30 in FIG. 13 (width: W2) includes a region in which
the irradiation intensity is lower than threshold level Th (width:
S2). Here, W1>S1 and W2>S2 hold. It is preferred that width
S1 is not less than 50% of width W1 and width S2 is not less than
50% of width W2.
[0145] The X-axis direction distribution I(X) of the irradiation
intensity represents the whole scanning (sum or integral value) of
the lift-off light. For example, while the irradiation position of
the lift-off light (the position of the center line of the line
beam) moves from position X0 to position X5, the region extending
from position X4 to position X5 is not irradiated with the lift-off
light. In this period, the irradiation intensity of the lift-off
light in the region extending from position X4 to position X5 is,
as a matter of course, zero.
[0146] The line width (the transverse axis dimension, the size in
the X-axis direction) of the lift-off light 216 can be, for
example, about 0.2 mm. This dimension defines the largeness of the
irradiation region at the interface between the plastic film 30 and
the glass base 10 at a certain time. The lift-off light 216 can be
emitted in the form of a pulsed or continuous wave. Irradiation
with the pulsed wave can be carried out at the frequency (the
number of shots in one second) of, for example, about 200 times per
second. When the lift-off light 216 is a pulsed wave, the scanning
speed is determined such that two consecutive shots form
partially-overlapping irradiation regions. If, for example, the
line width (the transverse axis dimension, the size in the X-axis
direction) of the lift-off light 216 is 0.2 mm and the irradiation
position moves at 20 mm per second in the X-axis direction, a gap
can occur between neighboring shots so long as the number of shots
per second is less than 100. Therefore, the number of shots per
second needs to exceed 100.
[0147] The positioning accuracy of the irradiation position depends
on the mechanical forwarding accuracy of the line beam source 214.
When the line width (the transverse axis dimension, the size in the
X-axis direction) of the irradiation light 216 is, for example, 40
.mu.m, moving the line beam source 214 stepwise at intervals of 20
.mu.m can set the overlap of irradiation regions formed by two
consecutive shots to 50%. Moving the line beam source 214 stepwise
at intervals of 30 .mu.m can set the overlap of irradiation regions
formed by two consecutive shots to 75%. By controlling the overlap
of irradiation regions, the irradiation intensity can also be
changed without modulating the power of the laser light source.
[0148] When the irradiation position of the lift-off light is
forwarded stepwise, "stepwise movement of the line beam source 214"
and "pulsed irradiation with the lift-off light" can be repeated.
In this case, irradiation with the lift-off light can be carried
out while movement of the line beam source 214 relative to the
stage 210 is stopped. In irradiation of a stationary object with
laser light, adjustment of the irradiation intensity to a target
value is easier than in irradiation of a moving object with laser
light. For example, the irradiation intensity can be adjusted by
increasing or decreasing the number of irradiation pulses or the
irradiation duration at a stationary position. According to the
embodiment of the present disclosure, a semiconductor laser device
is used for the light source, and therefore, advantageously, the
irradiation intensity can be easily controlled by adjusting the
oscillation state of the semiconductor laser device.
[0149] When the moving speed (scanning speed) of the irradiation
position is fixed to a predetermined value, the irradiation
intensity can be modulated by increasing or decreasing the number
of shots per second. On the contrary, when the number of shots per
second is fixed, the irradiation intensity can be modulated by
increasing or decreasing the moving speed (scanning speed) of the
irradiation position. The irradiation intensity can also be
modulated by changing the other parameters, e.g., the optical
distance from the line beam source 214 to the multilayer stack 100.
Also, a low irradiation region can be formed by providing a
mechanical shutter between the line beam source 214 and the glass
base 10 such that this shutter blocks the optical path of the
lift-off light.
[0150] As seen from FIG. 13, in this example, the irradiation
intensity of lift-off light for at least part of the interface
between the intermediate region 30i of the plastic film 30 and the
glass base 10 is lower than the irradiation intensity of lift-off
light for the interface between the flexible substrate regions 30d
of the plastic film 30 and the glass base 10. The region of this
"at least part" may be referred to as "low irradiation region" or
"non-delamination region". In the example of FIG. 13, the low
irradiation region includes two parallel stripe regions extending
along the perimeter of the glass base 10 (a region of width S1 and
a region of width S2). The two stripe regions can be formed by
irradiation with weak lift-off light 216 shown in FIG. 5A and FIG.
5D. In these two stripe regions, the irradiation intensity of the
lift-off light 216 is lower than threshold level Th, and therefore,
the intermediate region 30i of the plastic film 30 remains bound to
the glass base 10.
[0151] FIG. 14 shows an example where the irradiation intensity is
temporarily lower than threshold level Th in the middle of the
scanning with the lift-off light 216. Specifically, the irradiation
intensity is lower than threshold level Th in part of the region
extending from position X2 to position X3 (width: S3). In this
example, the "low irradiation region" at the interface between the
intermediate region 30i of the plastic film 30 and the glass base
10 includes not only the two stripe regions but also a single
middle stripe region (width: S3) which is parallel to the two
stripe regions. Each of widths S1, S2, S3 of these stripe regions
is, for example, not less than 1 mm and, in a certain example, not
less than 3 mm.
[0152] In the examples of FIG. 13 and FIG. 14, two light-emitting
devices 1000 are arranged in the direction of the X-axis. When N is
an integer not less than 3 and N light-emitting devices 1000 are
arranged in the direction of the X-axis, the total number of
stripes formed by the intermediate region 30i lying between two
adjoining light-emitting devices 1000 is N-1. It is not necessary
to provide a low irradiation region in all of the N-1 stripes.
Alternatively, a plurality of low irradiation regions may be
provided for an intermediate region 30i which forms a single
stripe.
[0153] In the examples of FIG. 13 and FIG. 14, the low irradiation
region of width S1 and the low irradiation region of width S2 each
reach the perimeter of the plastic film 30, although the embodiment
of the present disclosure is not limited to this example. For
example, the low irradiation region can be in various forms as
shown in FIG. 15A and FIG. 15B. FIG. 15A and FIG. 15B are diagrams
schematically showing still other examples of the distribution in
the X-axis direction of the irradiation intensity of the lift-off
light. In these drawings, examples of the modulation pattern of the
irradiation intensity at the interface between the intermediate
region 30i surrounding the light-emitting device 1000 on the
left-hand side of FIG. 13 and the glass base 10 are shown.
[0154] In the example shown in FIG. 15A, the striped low
irradiation regions (width: S1) extending along the perimeter of
the plastic film 30 do not reach the perimeter of the plastic film
30. The irradiation intensity of the lift-off light may exceed
threshold level Th before the glass base 10 is irradiated with the
lift-off light. As in the region extending from position X1 to
position X3 shown in FIG. 15A, the irradiation intensity may
gradually change. When the irradiation intensity gradually changes,
the width (the size in the scanning direction) of the "low
irradiation region" can be defined as the width of a region in
which the irradiation intensity is lower than threshold level
Th.
[0155] In the example shown in FIG. 15B, the low irradiation region
consists of a plurality of stripes which have a relatively narrow
width. When the lift-off light is, for example, pulsed light, such
a low irradiation region can be realized by applying consecutive
shots such that irradiation regions do not overlap each other.
[0156] To maintaining at least part of the intermediate region 30i
of the plastic film 30 bound to the glass base 10 by relatively
decreasing the irradiation intensity, it is desirable that the
irradiation intensity in the "at least part" is lower than
threshold level Th. However, even if it is not lower than threshold
level Th, the intermediate region 30i is likely to remain on the
glass base 10 so long as an irradiation intensity which is lower
than the irradiation intensity in a region to be delaminated is
realized. If the difference between the irradiation intensity in a
region to be delaminated and the irradiation intensity in the low
irradiation region is not less than 50 mJ/cm.sup.2, a sufficient
effect is achieved.
[0157] In the present embodiment, the lift-off light is a line beam
extending in a direction parallel to the perimeter of the glass
base 10 (first direction), and the scanning direction is the second
direction which is perpendicular to the first direction. However,
the first direction and the second direction do not need to be
perpendicular to each other but only need to be transverse to each
other.
[0158] In the above-described example, as previously described with
reference to FIG. 4, the position of the line beam source 214 is
moved while the stage 210 is fixed, whereby the irradiation
position of the lift-off light is moved (scanning). However, the
embodiment of the present invention is not limited to this example.
Scanning with the lift-off light may be carried out by moving the
stage 210 while the line beam source 214 is fixed. Alternatively,
scanning with the lift-off light may be carried out by moving both
the line beam source 214 and the stage 210.
[0159] <Lift-Off Light Irradiation Unit 2>
[0160] In the above-described embodiment, the plurality of light
sources included in the lift-off light irradiation unit are a
plurality of semiconductor laser devices, although the lift-off
light irradiation unit of the present disclosure is not limited to
this example. The lift-off light may be radiated from an incoherent
light source instead of a coherent light source such as laser light
source. In the example described in the following paragraphs, the
interface between the plastic film and the glass base is irradiated
with lift-off light radiated from a plurality of light emitting
diode devices.
[0161] As the light source for radiating the lift-off light, light
emitting diode devices are available at a lower cost than
semiconductor laser devices, and designing and operation of the
apparatus are easier from the viewpoint of eye-safety. Light
emitting diode (UV-LED) devices which are capable of radiating
ultraviolet light have the size of, for example, 3.5 mm
(longitudinal).times.3.5 mm (transverse).times.1.2 mm (thickness).
The plurality of light emitting diode devices can be arrayed in a
single line or in a plurality of lines. Also in this case, when a
plurality of light emitting diode devices are arrayed, the
delaminating apparatus is applicable to G8-size substrates (2400
mm.times.2200 mm) or huge substrates of still larger sizes, to
which conventional delaminating apparatuses are not applicable.
[0162] The emission intensity of the light emitting diode device is
also controlled by adjusting the magnitude of the driving current
as in the above-described semiconductor laser devices. Therefore,
in a one-dimensional or two-dimensional array of light emitting
diode devices, by modulating the driving current flowing through
each of the light emitting diode devices, the irradiation intensity
of the lift-off light can be temporally and/or spatially
modulated.
[0163] The array pitch of the light emitting diode devices is in
the range of, for example, not less than 3 mm and not more than 10
mm. The light radiated from the light emitting diode devices is
incoherent (non-coherent) light, which is different from laser
light. The wavelength of the light radiated from the light emitting
diode devices is in the range of, for example, not less than 300 nm
and not more than 380 nm. The irradiation energy of the lift-off
light radiated from the plurality of arrayed light emitting diode
devices is in the range of not less than 100 mJ/cm.sup.2 and not
more than 300 mJ/cm.sup.2.
[0164] Light radiated from each of the light emitting diode devices
diverges around the Z-axis direction at the center. This light
represents the distribution (directivity) of the relative radiation
intensity which depends on the radiation angle .theta. that is the
gradient from the Z-axis. In one example, the relative radiation
intensity of the light emitting diode devices can be about 75% at
.theta.=45.degree., and about 50% at 0=65.degree.. The directivity
of the light emitting diode devices can be adjusted by providing a
lens and/or reflector.
[0165] Commercially-available light emitting diode devices are
capable of radiating ultraviolet light at 365 nm with the power of
1450 milliwatts on the driving conditions that, for example, the
electric voltage is 3.85 volts and the electric current is 1000
milliamperes.
[0166] An example of a line beam light source in which a plurality
of light emitting diode devices are arrayed is described with
reference to FIG. 27A, FIG. 27B and FIG. 27C.
[0167] FIG. 27A schematically shows the upper surface of a line
beam light source 214 which includes a plurality of light emitting
diode devices 400 arrayed in Y-axis direction. FIG. 27B is a
cross-sectional view of the line beam light source 214 shown in
FIG. 27A taken along line B-B. FIG. 27B also shows a multilayer
stack 100. FIG. 27C is a diagram showing the moving direction of
the line beam light source 214 relative to the multilayer stack
100.
[0168] As shown in FIG. 27A, the line beam light source 214 can be
coupled with a driving circuit 280A. The driving circuit 280A can
modulate the magnitude of the electric current flowing through each
of the light emitting diode devices 400. The driving circuit 280A
can be coupled with a controller 260. The controller 260 controls
the operation of the driving circuit 280A, thereby temporally
and/or spatially modulating the irradiation intensity of the
lift-off light radiated from the line beam light source 214.
[0169] In this example, the ultraviolet light radiated from the
light emitting diode devices 400 travels through a cylindrical lens
410 and enters the glass base 10 of the multilayer stack 100 in
order to increase the irradiation energy per unit area (irradiation
intensity expressed in joule/cm.sup.2). Since the ultraviolet light
is focused in X-axis direction, the width (the size in X-axis
direction) of the irradiation region in the interface at which
delamination is to occur (delamination plane) can be decreased to,
for example, about 0.2 mm or smaller. Since the cylindrical lens
410 does not focus the light in X-axis direction, the size in
Y-axis direction of the irradiation region is not shortened.
[0170] The irradiation intensity of the lift-off light can be
increased by decreasing the array pitch of the light emitting diode
devices 400 such that the number density of the light emitting
diode devices 400 increases. For example, when each of the light
emitting diode devices 400 has the above-described size, several
tens of light emitting diode devices 400 or 100 or more light
emitting diode devices 400 may be arrayed with the intervals of 3.5
mm to 10 mm (array pitch: the distance between the centers of
adjoining light sources). When smaller light emitting diode devices
400 are used, they can be arrayed with the intervals of, for
example, 2.0 mm to 10 mm. The array pitch of the light emitting
diode devices 400 is preferably not more than 5 mm.
[0171] When light emitting diode devices 400 of high directivity
are arrayed at a high density and the distance from the light
emitting diode devices 400 to the delamination plane is, for
example, 1.5-5 mm, the irradiation intensity can be modulated at
the spatial resolution of 2 mm to 10 mm even without an optical
element such as cylindrical lens.
[0172] The electric current flowing through each of the light
emitting diode devices is modulated while the line beam light
source 214 is moved relative to the multilayer stack 100 as shown
in FIG. 27C. As a result, lift-off light irradiation can be
realized in the same way as the embodiment with the use of the line
beam light source 214 which includes a plurality of arrayed
semiconductor laser devices 300.
[0173] To increase the spatial resolution of the line beam light
source 214, the light emitting diode devices 400 may be arrayed in
a plurality of columns.
[0174] FIG. 28A schematically shows the upper surface of the line
beam light source 214 which includes a plurality of columns of
light emitting diode devices 400 arrayed in Y-axis direction. FIG.
28B is a cross-sectional view of the line beam light source 214
shown in FIG. 28A taken along line B-B. FIG. 28B also shows the
multilayer stack 100. FIG. 28C is a diagram showing the moving
direction of the line beam light source 214 relative to the
multilayer stack 100.
[0175] This line beam light source 214 can also be coupled with the
driving circuit 280A. The controller 260 controls the operation of
the driving circuit 280A, thereby temporally and/or spatially
modulating the lift-off light radiated from the line beam light
source 214.
[0176] In this example, the line beam light source 214 includes
five columns of light emitting diode devices 400 each extending in
Y-axis direction. The positions in Y-axis direction of the five
columns of light emitting diode devices 400 are different from one
another. The positions of the light emitting diode columns are
shifted by P/5 in Y-axis direction between adjoining columns where
P is the array pitch.
[0177] This line beam light source 214 includes a lens sheet 420
for converging light such that one side of the irradiation region
formed by each of the light emitting diode devices 400 has the
length of about P/5. Ultraviolet light transmitted through the lens
sheet 420 can form irradiation regions in the form of dots over the
delamination plane.
[0178] As shown in FIG. 28C, when the line beam light source 214 is
moved relative to the multilayer stack 100, a plurality of
irradiation regions overlap so that the entire delamination plane
can be irradiated with the ultraviolet light. By modulating the
electric current flowing through each of the light emitting diode
devices while the line beam light source 214 is moved relative to
the multilayer stack 100, spatial and temporal modulation can be
carried out.
[0179] FIG. 28D is a diagram schematically showing irradiation
regions 218 the line beam source 214 of FIG. 28A is forming. By
turning off some of the light emitting diode devices 400 during
scanning by the line beam light source 214, non-irradiation regions
whose width is smaller than the size of the light emitting diode
devices 400 can be formed.
[0180] FIG. 28E is a plan view showing an example of irradiation
regions formed by temporarily modulating the electric current
flowing through each of the light emitting diode devices 400 during
scanning by the line beam source 214. It is seen that a pattern of
irradiation regions and non-irradiation regions can be formed with
high spatial resolution.
[0181] Thus, according to the array of the light emitting diode
devices 400 illustrated in FIG. 28A, modulation with high spatial
resolution is possible as compared with the array of the light
emitting diode devices 400 illustrated in FIG. 27A.
[0182] The irradiation with the lift-off light may be carried out
while the plurality of light sources are kept stationary relative
to the multilayer stack 100.
[0183] FIG. 29 is a top view schematically showing an example of a
surface-emission light source 215 in which a large number of light
emitting diode devices 400 are arrayed in a matrix. The number of
light emitting diodes arrayed vertically and horizontally only
needs to be arbitrarily set according to the size of the substrate
used. In this case, a delaminating apparatus applicable to G8-size
substrates or huge substrates of still larger sizes can be
realized. When the surface-emission light source 215 of this
example is used, luminance distributions of various patterns can be
formed as in displays.
[0184] When the irradiation with the lift-off light is carried out
while both the multilayer stack 100 and the surface-emission light
source 215 are kept stationary, a precise driving unit for light
scanning is not necessary. When the irradiation with the lift-off
light is carried out while the multilayer stack 100 is moved
relative to a conventional stationary line beam light source, an
area which is at least twice the area of the multilayer stack 100
is necessary for the movement of the multilayer stack 100. However,
according to the embodiment of the present disclosure, an extra
area for the movement of the multilayer stack 100 is not necessary,
and the area for installing the apparatus will advantageously be
halved.
[0185] FIG. 30 is a top view schematically showing another example
of the surface-emission light source 215 in which a large number of
light emitting diode devices 400 are arrayed in a matrix. In the
surface-emission light source 215 of this example, the arrangement
of the light emitting diode devices 400 is determined according to
the irradiation regions for the lift-off light.
[0186] When the surface-emission light sources 215 shown in FIG. 29
and FIG. 30 are used, it is not necessary to carry out lift-off
light irradiation while the surface-emission light source 215 is
kept stationary relative to the multilayer stack 100. The
irradiation with the lift-off light may be carried out while
shifting the relative position of the surface-emission light source
215 to the multilayer stack 100. While the surface-emission light
source 215 is kept stationary, the shape of the spatial
distribution of the irradiation intensity can be changed by
shifting the relative position of the surface-emission light source
215 to the multilayer stack 100 even if light radiated from the
surface-emission light source 215 forms irradiation regions in the
form of dots or lines over the delamination plane. The amount of
the shift of the relative position of the surface-emission light
source 215 to the multilayer stack 100 may be less than, or may be
more than, the array pitch of the light emitting diode devices.
[0187] The plane to be delaminated may be divided into a plurality
of regions, and each of the regions may be irradiated with a flash
of the lift-off light in the same way as sequential exposure with
the use of a stepper.
[0188] Thus, using light emitting diode devices enables irradiation
with the lift-off light at a lower cost with the use of a large
number of light sources rather than using semiconductor laser
devices, which are relatively expensive. Further, the duration of
radiation of the lift-off light from each of the light emitting
diode devices can be easily increased. Therefore, even if the
optical power of each of the light emitting diode devices is small,
the irradiation energy required for delamination can be achieved by
adjusting the irradiation duration. Furthermore, since laser light
is not used, it is also advantageous from the viewpoint of safety
for human eyes (eye-safe).
[0189] <Lift-Off>
[0190] FIG. 16A illustrates a state where the multilayer stack 100
is in contact with the stage 210 after irradiation with the
lift-off light. While this state is maintained, the distance from
the stage 210 to the glass base 10 is increased. At this point in
time, the stage 210 of the present embodiment holds a
light-emitting device portion of the multilayer stack 100.
[0191] An unshown actuator holds the glass base 10 and moves the
entirety of the glass base 10 in the direction of arrow L, thereby
carrying out delaminating (lift-off). The glass base 10 can be
moved together with an unshown chuck stage while being adhered by
suction to the chuck stage. The direction of movement of the glass
base 10 does not need to be vertical, but may be diagonal, to the
first surface 100a of the multilayer stack 100. The movement of the
glass base does not need to be linear but may be rotational.
Alternatively, the stage 210 may be moved upward in the drawing
while the glass base 10 is secured by an unshown holder or another
stage.
[0192] FIG. 16B is a cross-sectional view showing the
thus-separated first portion 110 and second portion 120 of the
multilayer stack 100. FIG. 17 is a perspective view showing the
second portion 120 of the multilayer stack 100. In FIG. 17, a guide
rail 246 and other relevant components are not shown. The first
portion 110 of the multilayer stack 100 includes a plurality of
light-emitting devices 1000 which are in contact with the stage
210. The respective light-emitting devices 1000 include the
functional layer regions 20 and the plurality of flexible substrate
regions 30d of the plastic film 30. Meanwhile, the second portion
120 of the multilayer stack 100 includes the glass base 10 and the
intermediate region 30i of the plastic film 30. The intermediate
region 30i of the plastic film 30 is bound to the glass base 10 in
at least some low-irradiation regions. Thus, the entirety of the
intermediate region 30i of the plastic film 30 separates from the
stage 210 while the entirety of the intermediate region 30i is kept
adhered to the glass base 10.
[0193] In the example of FIG. 17, both the irradiation process with
the lift-off light and the delaminating process are carried out
using the delaminating apparatus 220 that includes the stage 210.
The embodiment of the present disclosure is not limited to this
example. The irradiation process with the lift-off light may be
carried out using a lift-off light irradiation unit which includes
the stage 210, while the delaminating process is carried out using
a different apparatus that includes another stage which is
different from the stage 210. In this case, after irradiation with
the lift-off light, it is necessary to transfer the multilayer
stack 100 from the stage 210 to another unshown stage. When the
same stage is used for carrying out both the irradiation process
with the lift-off light and the delaminating process, the step of
transferring the multilayer stack between the stages can be
omitted.
[0194] As described above, in the present embodiment, the step of
separating the multilayer stack 100 into the first portion 110 and
the second portion 120 is carried out while the stage 210 holds the
second surface 100b of the multilayer stack 100 by suction. The
essence of this separation step resides in that an unnecessary part
of the multilayer stack 100 which is not a constituent of the
light-emitting device 1000 separates together with the glass base
10 from the stage 210. In the present embodiment, the cutting step
illustrated in FIG. 2, i.e., the step of cutting a part of the
multilayer stack 100 exclusive of the glass base 10 into the
plurality of light-emitting devices 1000 and the remaining
unnecessary portions, is carried out before irradiation with the
lift-off light. Carrying out the cutting step before the lift-off
light irradiation step is effective in realizing the separation
illustrated in FIG. 16B and FIG. 17. In order that an unnecessary
portion which is not a constituent of the light-emitting device
1000 remains on the glass base 10, the irradiation intensity of the
lift-off light is modulated such that part of that unnecessary
portion is kept bound to the glass base 10.
[0195] <Steps after Delaminating>
[0196] FIG. 18 is a perspective view showing the first portion 110
(light-emitting devices 1000) of the multilayer stack 100 adhered
by suction to the stage 210 and the second portion 120 (the glass
base 10 and objects bound thereto) at a position distant from the
stage 210. Unnecessary portions of the multilayer stack 100 which
are not constituents of the light-emitting devices 1000 are bound
to the glass base 10.
[0197] FIG. 19 is a perspective view showing the first portion 110
of the multilayer stack 100 adhered by suction to the stage 210.
The first portion 110 of the multilayer stack 100 supported by the
stage 210 includes a plurality of light-emitting devices 1000
arrayed in rows and columns. In the example of FIG. 19, a part of
the plastic film 30, specifically the surface (delaminated surface)
30s of the flexible substrate regions 30d, is exposed.
[0198] FIG. 20 is a cross-sectional view showing that the stage 210
holds the light-emitting devices 1000 by suction. This cross
section is parallel to the ZX plane. The direction of the Z-axis of
FIG. 20 is opposite to the direction of the Z-axis of FIG. 18 and
FIG. 19.
[0199] Various processes can be sequentially or concurrently
performed on the plurality of light-emitting devices 1000 which are
in contact with the stage 210.
[0200] The "processes" to be performed on the light-emitting
devices 1000 can include attaching a dielectric and/or
electrically-conductive film to each of the plurality of
light-emitting devices 1000, cleaning or etching each of the
plurality of light-emitting devices 1000, and mounting an optical
part and/or an electronic part to each of the plurality of
light-emitting devices 1000. Specifically, a part such as, for
example, a polarizer, encapsulation film, touchscreen, heat
radiation sheet, electromagnetic shield, driver integrated circuit,
or the like, can be mounted to the flexible substrate region 30d of
each of the light-emitting devices 1000. The sheet-like part
includes a functional film which can add an optical, electrical or
magnetic function to the light-emitting devices 1000.
[0201] The plurality of light-emitting devices 1000 are supported
by the stage 210 such that the light-emitting devices 1000 are
adhered by suction to the stage 210. The various processes which
are to be performed on each of the light-emitting devices 1000 can
be efficiently carried out.
[0202] The surface 30s of the plastic film 30 delaminated from the
glass base 10 is active. Therefore, the surface 30s may be covered
with a protection film or subjected to a surface treatment for
conversion to a hydrophobic surface before various parts are
mounted to the surface 30s.
[0203] FIG. 21 is a cross-sectional view schematically showing the
light-emitting devices 1000 detached from the stage 210 after the
sheet-like part (functional film) 60 is mounted to the
light-emitting devices 1000.
[0204] According to the prior art, the plastic film is delaminated
from the glass base before the light-emitting devices 1000 are
divided from one another. Therefore, when a subsequent process is
carried out, a large number of light-emitting devices 1000 are
bound to a single plastic film. Thus, it is difficult to carry out
an efficient process on each of the light-emitting devices 1000.
When the light-emitting devices 1000 are divided from one another
after the sheet-like part is attached, a portion of the sheet-like
part which is present in an intermediate region between adjoining
two of the light-emitting devices 1000 is useless.
[0205] On the other hand, according to the embodiment of the
present disclosure, a large number of light-emitting devices 1000
are still orderly arrayed on the stage 210 after being delaminated
from the glass base 10. Therefore, various processes can be
efficiently performed on the light-emitting devices 1000
sequentially or concurrently.
[0206] After the step of separating the multilayer stack 100 into
the first portion 110 and the second portion 120, the step of
adhering another protection sheet (second protection sheet) 70 to
the plurality of light-emitting devices 1000 which are in contact
with the stage 210 may be further performed as shown in FIG. 22.
The second protection sheet 70 can perform the function of
temporarily protecting the surface of the flexible substrate
regions 30d of the plastic film 30 delaminated from the glass base
10. The second protection sheet 70 can have the same laminate
structure as that of the previously-described protection sheet 50.
The protection sheet 50 can be referred to as "first protection
sheet 50".
[0207] The second protection sheet 70 may be adhered to the
plurality of light-emitting devices 1000 after various processes
which have previously been described are performed on the plurality
of light-emitting devices 1000 which are in contact with the stage
210.
[0208] When suction of the light-emitting devices 1000 by the stage
210 is stopped after the second protection sheet 70 is adhered, the
plurality of light-emitting devices 1000 which are bound to the
second protection sheet 70 can be detached from the stage 210.
Thereafter, the second protection sheet 70 can function as a
carrier for the plurality of light-emitting devices 1000. This is
transfer of the light-emitting devices 1000 from the stage 210 to
the second protection sheet 70. Various processes may be
sequentially or concurrently performed on the plurality of
light-emitting devices 1000 which are bound to the second
protection sheet 70.
[0209] FIG. 23 is a cross-sectional view showing a carrier sheet 90
carrying a plurality of parts (functional films) 80 which are to be
mounted to the plurality of light-emitting devices 1000. By moving
this carrier sheet 90 in the direction of arrow U, the respective
parts 80 can be attached to the light-emitting devices 1000. The
upper surface of the parts 80 has an adhesive layer which is
capable of strongly adhering to the light-emitting devices 1000.
Meanwhile, the adhesion between the carrier sheet 90 and the parts
80 is relatively weak. Using such a carrier sheet 90 enables a
simultaneous "transfer" of the parts 80. Such a transfer is readily
realized because the plurality of light-emitting devices 1000 are
regularly arrayed on the stage 210 while the light-emitting devices
1000 are supported by the stage 210.
[0210] Hereinafter, the configuration of the multilayer stack 100
before the dividing of FIG. 2 is described in more detail.
[0211] First, see FIG. 24A. FIG. 24A is a cross-sectional view
showing the glass base 10 with the plastic film 30 provided on the
surface of the glass base 10. The glass base 10 is a supporting
substrate for processes. The thickness of the glass base 10 can be,
for example, about 0.3-0.7 mm.
[0212] In the present embodiment, the plastic film 30 is a
polyimide film having a thickness of, for example, not less than 5
.mu.m and not more than 100 .mu.m. The polyimide film can be formed
from a polyamide acid, which is a precursor of polyimide, or a
polyimide solution. The polyimide film may be formed by forming a
polyamide acid film on the surface of the glass base 10 and then
thermally imidizing the polyamide acid film. Alternatively, the
polyimide film may be formed by forming, on the surface of the
glass base 10, a film from a polyimide solution which is prepared
by melting a polyimide or dissolving a polyimide in an organic
solvent. The polyimide solution can be obtained by dissolving a
known polyimide in an arbitrary organic solvent. The polyimide
solution is applied to the surface 10s of the glass base 10 and
then dried, whereby a polyimide film can be formed.
[0213] In the case where the light-emitting device is a bottom
emission type flexible display, it is preferred that the polyimide
film realizes high transmittance over the entire range of visible
light. The transparency of the polyimide film can be represented
by, for example, the total light transmittance in accordance with
JIS K7105-1981. The total light transmittance can be set to not
less than 80% or not less than 85%. On the other hand, in the case
of a top emission type flexible display, it is not affected by the
transmittance.
[0214] The plastic film 30 may be a film which is made of a
synthetic resin other than polyimide. Note that, however, in the
embodiment of the present disclosure, the process of forming a thin
film transistor includes a heat treatment at, for example, not less
than 350.degree. C., and therefore, the plastic film 30 is made of
a material which will not be deteriorated by this heat
treatment.
[0215] The plastic film 30 may be a multilayer structure including
a plurality of synthetic resin layers. In one form of the present
embodiment, in delaminating a flexible display structure from the
glass base 10, the step of irradiating the plastic film 30 with
ultraviolet lift-off light transmitted through the glass base 10 is
carried out. A part of the plastic film 30 at the interface with
the glass base 10 needs to absorb the ultraviolet lift-off light
and decompose (disappear). Alternatively, for example, a
sacrificial layer (thin metal or amorphous silicon layer) which is
to absorb lift-off light of a certain wavelength band and produce a
gas may be provided between the glass base 10 and the plastic film
30. In this case, the plastic film 30 can be easily delaminated
from the glass base 10 by irradiating the sacrificial layer with
the lift-off light. Providing the sacrificial layer also achieves
the effect of suppressing generation of ashes.
[0216] <Polishing>
[0217] When there is an object (target) which is to be polished
away, such as particles or protuberances, on the surface 30x of the
plastic film 30, the target may be polished away using a polisher
such that the surface becomes flat. Detection of a foreign object,
such as particles, can be realized by, for example, processing of
an image obtained by an image sensor. After the polishing process,
a planarization process may be performed on the surface 30x of the
plastic film 30. The planarization process includes the step of
forming a film which improves the flatness (planarization film) on
the surface 30x of the plastic film 30. The planarization film does
not need to be made of a resin.
[0218] <Lower Gas Barrier Film>
[0219] Then, a gas barrier film may be formed on the plastic film
30. The gas barrier film can have various structures. Examples of
the gas barrier film include a silicon oxide film and a silicon
nitride film. Other examples of the gas barrier film can include a
multilayer film including an organic material layer and an
inorganic material layer. This gas barrier film may be referred to
as "lower gas barrier film" so as to be distinguishable from a gas
barrier film covering the functional layer regions 20, which will
be described later. The gas barrier film covering the functional
layer regions 20 can be referred to as "upper gas barrier
film".
[0220] <Functional Layer Region>
[0221] Hereinafter, the process of forming the functional layer
regions 20, including the TFT layer 20A and the light-emitting
device layer 20B, and the upper gas barrier film 40 is
described.
[0222] First, as shown in FIG. 24B, a plurality of functional layer
regions 20 are formed on a glass base 10. There is a plastic film
30 between the glass base 10 and the functional layer regions 20.
The plastic film 30 is bound to the glass base 10.
[0223] More specifically, the functional layer regions 20 include a
TFT layer 20A (lower layer) and a light-emitting device layer 20B
(upper layer). The TFT layer 20A and the light-emitting device
layer 20B are sequentially formed by a known method. When the
light-emitting device is a display, the TFT layer 20A includes a
circuit of a TFT array which realizes an active matrix. The
light-emitting device layer 20B includes an array of light-emitting
devices (OLED devices and/or micro LED devices), each of which can
be driven independently.
[0224] The chip size of the micro LED devices is, for example,
smaller than 100 .mu.m.times.100 .mu.m. The micro LED devices can
be made of different inorganic semiconductor materials according to
the color or wavelength of light to be radiated. Identical
semiconductor chips may include a plurality of semiconductor
multilayer stacks of different compositions such that light of
different colors, R (red), G (green) and B (blue), are radiated
from the respective semiconductor multilayer stacks. As well known
in the art, a semiconductor chip which radiates ultraviolet light
or a semiconductor chip which radiates blue light may be combined
with various phosphor materials such that light of R, G and B are
radiated.
[0225] The thickness of the TFT layer 20A is, for example, about 4
.mu.m. The thickness of the light-emitting device layer 20B
including the OLED devices is, for example, 1 .mu.m. The thickness
of the light-emitting device layer 20B including the micro LED
devices can be, for example, not less than 10 .mu.m.
[0226] FIG. 25 is a basic equivalent circuit diagram of a sub-pixel
in a display which is an example of the light-emitting device. A
single pixel of the display can consist of sub-pixels of different
colors such as, for example, R, G, and B. The example illustrated
in FIG. 25 includes a selection TFT element Tr1, a driving TFT
element Tr2, a storage capacitor CH, and a light-emitting device
EL. The selection TFT element Tr1 is connected with a data line DL
and a selection line SL. The data line DL is a line for
transmitting data signals which define an image to be displayed.
The data line DL is electrically coupled with the gate of the
driving TFT element Tr2 via the selection TFT element Tr1. The
selection line SL is a line for transmitting signals for
controlling the ON/OFF state of the selection TFT element Tr1. The
driving TFT element Tr2 controls the state of the electrical
connection between a power line PL and the light-emitting device
EL. When the driving TFT element Tr2 is ON, an electric current
flows from the power line PL to a ground line GL via the
light-emitting device EL. This electric current allows the
light-emitting device EL to emit light. Even when the selection TFT
element Tr1 is OFF, the storage capacitor CH maintains the ON state
of the driving TFT element Tr2.
[0227] The TFT layer 20A includes a selection TFT element Tr1, a
driving TFT element Tr2, a data line DL, and a selection line SL.
The light-emitting device layer 20B includes a light-emitting
device EL. Before formation of the light-emitting device layer 20B,
the upper surface of the TFT layer 20A is planarized by an
interlayer insulating film that covers the TFT array and various
wires. A structure which supports the light-emitting device layer
20B and which realizes active matrix driving of the light-emitting
device layer 20B is referred to as "backplane".
[0228] The circuit elements and part of the lines shown in FIG. 25
can be included in any of the TFT layer 20A and the light-emitting
device layer 20B. The lines shown in FIG. 25 are connected with an
unshown driver circuit.
[0229] In the embodiment of the present disclosure, the TFT layer
20A and the light-emitting device layer 20B can have various
specific configurations. These configurations do not limit the
present disclosure. The TFT element included in the TFT layer 20A
may have a bottom gate type configuration or may have a top gate
type configuration. Emission by the light-emitting device included
in the light-emitting device layer 20B may be of a bottom emission
type or may be of a top emission type. The specific configuration
of the light-emitting device is also arbitrary.
[0230] The material of a semiconductor layer which is a constituent
of the TFT element includes, for example, crystalline silicon,
amorphous silicon, and oxide semiconductor. In the embodiment of
the present disclosure, part of the process of forming the TFT
layer 20A includes a heat treatment step at 350.degree. C. or
higher for the purpose of improving the performance of the TFT
element.
[0231] <Upper Gas Barrier Film>
[0232] After formation of the above-described functional layer, the
entirety of the functional layer regions 20 is covered with a gas
barrier film (upper gas barrier film) 40 as shown in FIG. 24C. A
typical example of the upper gas barrier film 40 is a multilayer
film including an inorganic material layer and an organic material
layer. Elements such as an adhesive film, another functional layer
which is a constituent of a touchscreen, polarizers, etc., may be
provided between the upper gas barrier film 40 and the functional
layer regions 20 or in a layer overlying the upper gas barrier film
40. Formation of the upper gas barrier film 40 can be realized by a
Thin Film Encapsulation (TFE) technique. When the light-emitting
device layer 20B includes OLED devices, from the viewpoint of
encapsulation reliability, the WVTR (Water Vapor Transmission Rate)
of a thin film encapsulation structure is typically required to be
not more than 1.times.10.sup.-4 g/m.sup.2/day. According to the
embodiment of the present disclosure, this criterion is met. The
thickness of the upper gas barrier film 40 is, for example, not
more than 1.5 .mu.m.
[0233] FIG. 26 is a perspective view schematically showing the
upper surface side of the multilayer stack 100 at a point in time
when the upper gas barrier film 40 is formed. A single multilayer
stack 100 includes a plurality of light-emitting devices 1000
supported by the glass base 10. In the example illustrated in FIG.
26, a single multilayer stack 100 includes a larger number of
functional layer regions 20 than in the example illustrated in FIG.
1A. As previously described, the number of functional layer regions
20 supported by a single glass base 10 is arbitrary.
[0234] <Protection Sheet>
[0235] Next, refer to FIG. 24D. As shown in FIG. 24D, a protection
sheet 50 is adhered to the upper surface of the multilayer stack
100. The protection sheet 50 can be made of a material such as, for
example, polyethylene terephthalate (PET), polyvinyl chloride
(PVC), or the like. As previously described, a typical example of
the protection sheet 50 has a laminate structure which includes a
layer of an applied mold-releasing agent at the surface. The
thickness of the protection sheet 50 can be, for example, not less
than 50 .mu.m and not more than 200 .mu.m.
[0236] After the thus-formed multilayer stack 100 is provided, the
production method of the present disclosure can be carried out
using the above-described production apparatus (delaminating
apparatus 220).
INDUSTRIAL APPLICABILITY
[0237] An embodiment of the present invention provides a novel
flexible light-emitting device production method. A flexible
light-emitting device is broadly applicable to smartphones, tablet
computers, on-board displays, and small-, medium- and large-sized
television sets. The flexible light-emitting device can also be
used as an illumination device.
REFERENCE SIGNS LIST
[0238] 10 . . . glass base, 20 . . . functional layer region, 20A .
. . TFT layer, 20B . . . light-emitting device layer, 30 . . .
plastic film, 30d . . . flexible substrate region of plastic film,
30i . . . intermediate region of plastic film, 40 . . . gas barrier
film, 50 . . . protection sheet, 100 . . . multilayer stack, 210 .
. . stage, 220 . . . lift-off light irradiation unit (delaminating
apparatus), 260 . . . controller, 300 . . . semiconductor laser
device, 1000 . . . light-emitting device
* * * * *