U.S. patent application number 17/487388 was filed with the patent office on 2022-01-13 for image sensor with large dynamic range.
The applicant listed for this patent is Shenzhen Genorivision Technology Co., Ltd.. Invention is credited to Peiyan CAO, Yurun LIU.
Application Number | 20220013571 17/487388 |
Document ID | / |
Family ID | |
Filed Date | 2022-01-13 |
United States Patent
Application |
20220013571 |
Kind Code |
A1 |
CAO; Peiyan ; et
al. |
January 13, 2022 |
IMAGE SENSOR WITH LARGE DYNAMIC RANGE
Abstract
Disclosed herein is an image sensor comprising an array of APDs,
an electronic system configured to individually control reverse
biases on the APDs based on intensities of light incident on the
APDs.
Inventors: |
CAO; Peiyan; (Shenzhen,
CN) ; LIU; Yurun; (Shenzhen, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Shenzhen Genorivision Technology Co., Ltd. |
Shenzhen |
|
CN |
|
|
Appl. No.: |
17/487388 |
Filed: |
September 28, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16117910 |
Aug 30, 2018 |
11158663 |
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17487388 |
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PCT/CN2016/086507 |
Jun 21, 2016 |
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16117910 |
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International
Class: |
H01L 27/146 20060101
H01L027/146; H01L 31/107 20060101 H01L031/107; H04B 10/69 20060101
H04B010/69; H04N 5/235 20060101 H04N005/235 |
Claims
1. An image sensor comprising: an array of APDs; an electronic
system configured to individually control reverse biases on the
APDs based on intensities of light incident on the APDs.
2. The image sensor of claim 1, wherein the electronic system is
configured to set the reverse biases differently to different APDs
in the array.
3. The image sensor of claim 1, wherein the APDs are configured
such that, at a given time, a first one of the APDs operates in a
linear mode and a second one of the APDs operates in a Geiger
mode.
4. The image sensor of claim 1, wherein the electronic system is
configured to determine the intensities of light incident on the
APDs operating in a linear mode and the intensities of light
incident on the APDs operating in a Geiger mode.
5. The image sensor of claim 1, wherein the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light above a saturation intensity of these APDs to
operate in a linear mode.
6. The image sensor of claim 5, wherein the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light above the saturation intensity of these APDs
to operate in the linear mode by reducing the reverse biases on
these APDs to a value below a breakdown voltage of these APDs from
a value above the breakdown voltage.
7. The image sensor of claim 1, wherein the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light below a saturation intensity of these APDs to
operate in a Geiger mode.
8. The image sensor of claim 7, wherein the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light below the saturation intensity of these APDs
to operate in the Geiger mode by increasing the reverse biases on
these APDs to a value above a breakdown voltage of these APDs from
a value below the breakdown voltage.
9. The image sensor of claim 1, wherein the electronic system is
configured to individually switch the APDs in the array between
operating in a linear mode and operating in a Geiger mode based on
intensities of light incident on the APDs.
10. The image sensor of claim 1, wherein the image sensor is
configured to output a representation of intensities of the light
incident on the APDs, without passing operating modes of the APDs
to downstream circuits.
11. The image sensor of claim 1, wherein the APDs are in or on a
first substrate and the electronic system is in or on a second
substrate; wherein the first substrate and the second substrate are
bonded together.
12. The image sensor of claim 11, further comprising transmission
lines in the first substrate or in the second substrate.
13. The image sensor of claim 1, further comprising vias that are
configured to electrically connect the APDs and the electronic
system.
14. A telescopic sight comprising the image sensor of claim 1.
15. A night vision goggle comprising the image sensor of claim
1.
16. A telescope comprising the image sensor of claim 1.
17. A spectrometer comprising the image sensor of claim 1.
18. A vehicle comprising the image sensor of claim 1, wherein the
vehicle is a land vehicle, a space vehicle, an aerial vehicle, or a
water surface vehicle.
Description
TECHNICAL FIELD
[0001] The disclosure herein relates to an image sensor,
particularly relates an image sensor with large dynamic range.
BACKGROUND
[0002] An image sensor or imaging sensor is a sensor that can
detect a spatial intensity distribution of a radiation. An image
sensor usually represents the detected image by electrical signals.
Image sensors based on semiconductor devices may be classified into
several types: semiconductor charge-coupled devices (CCD),
complementary metal-oxide-semiconductor (CMOS), N-type
metal-oxide-semiconductor (NMOS). A CMOS image sensor is a type of
active pixel sensor made using the CMOS semiconductor process.
Light incident on a pixel in the CMOS image sensor is converted
into an electric voltage. The electric voltage is digitized into a
discrete value that represents the intensity of the light incident
on that pixel. An active-pixel sensor (APS) is an image sensor that
includes pixels with a photodetector and an active amplifier. A CCD
image sensor includes a capacitor in a pixel. When light incidents
on the pixel, the light generates electrical charges and the
charges are stored on the capacitor. The stored charges are
converted to an electric voltage and the electrical voltage is
digitized into a discrete value that represents the intensity of
the light incident on that pixel.
[0003] Dynamic range of an image sensor is the range between the
smallest and largest light intensity the image sensor can detect.
Namely, the image sensor cannot distinguish different light
intensities outside the dynamic range.
SUMMARY
[0004] Disclosed herein is a system comprising: an avalanche
photodiode (APD); a bias source configured to supply a reverse bias
to the APD; a current meter configured to measure electric current
through the APD; a controller configured to reduce the reverse bias
to a value below a breakdown voltage of the APD from a value above
the breakdown voltage when an intensity of light incident on the
APD is above a threshold, and configured to determine the intensity
of the light above the threshold based on the electric current
through the APD when the reverse bias is below the breakdown
voltage.
[0005] According to an embodiment, the controller is configured to
quench the APD after the controller detects a rising edge in the
electric current, when the reverse bias is above the breakdown
voltage.
[0006] According to an embodiment, the controller is configured to
increase the reverse bias to above the breakdown voltage after
quenching the APD.
[0007] According to an embodiment, the controller is configured to
determine the intensity of light incident on the APD based on a
number of pulses in the electric current in a given amount of time,
when the reverse bias is above the breakdown voltage.
[0008] Disclosed herein is an image sensor comprising: an array of
APDs; an electronic system configured to individually control
reverse biases on the APDs based on intensities of light incident
on the APDs.
[0009] According to an embodiment, the electronic system is
configured to set the reverse biases differently to different APDs
in the array.
[0010] According to an embodiment, the APDs are configured such
that, at a given time, a first one of the APDs operates in a linear
mode and a second one of the APDs operates in a Geiger mode.
[0011] According to an embodiment, the electronic system is
configured to determine the intensities of light incident on the
APDs operating in a linear mode and the intensities of light
incident on the APDs operating in a Geiger mode.
[0012] According to an embodiment, the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light above a saturation intensity of these APDs to
operate in a linear mode; wherein the electronic system is
configured to cause APDs in the array that are exposed to
intensities of light below the saturation intensity of these APDs
to operate in a Geiger mode.
[0013] According to an embodiment, the electronic system is
configured to individually switch the APDs in the array between
operating in a linear mode and operating in a Geiger mode based on
intensities of light incident on the APDs.
[0014] According to an embodiment, the image sensor is configured
to output a representation of intensities of the light incident on
the APDs, without passing operating modes of the APDs to downstream
circuits.
[0015] According to an embodiment, the APDs are in or on a first
substrate and the electronic system is in or on a second substrate;
wherein the first substrate and the second substrate are bonded
together.
[0016] According to an embodiment, the image sensor further
comprises transmission lines in the first substrate or in the
second substrate.
[0017] According to an embodiment, the image sensor further
comprises vias that are configured to electrically connect the APDs
and the electronic system.
[0018] Disclosed herein is a telescopic sight comprising the image
sensor disclosed herein.
[0019] Disclosed herein is a night vision goggle comprising the
image sensor disclosed herein.
[0020] Disclosed herein is a telescope comprising the image sensor
disclosed herein.
[0021] Disclosed herein is a spectrometer comprising the image
sensor disclosed herein.
[0022] Disclosed herein is a vehicle comprising the image sensor
disclosed herein, wherein the vehicle is a land vehicle, a space
vehicle, an aerial vehicle, or a water surface vehicle.
[0023] Disclosed herein is a method of using an APD, comprising:
(a) applying a first reverse bias above a breakdown voltage of the
APD to the APD; (b) measuring a first intensity of light incident
on the APD; (c) determining whether the first intensity is above a
first threshold; if the first intensity is not above the first
threshold, repeating (a)-(c); if the first intensity is above the
first threshold: (d) applying a second reverse bias below the
breakdown voltage to the APD; (e) measuring a second intensity of
light incident on the APD; (f) determining whether the first
intensity is below a second threshold; if the second intensity is
not below the second threshold, repeating (d)-(f); if the second
intensity is below the first threshold, performing (a)-(c).
[0024] According to an embodiment, measuring a first intensity
comprises counting a number of current pulses through the APD in a
giving amount of time.
[0025] According to an embodiment, measuring a second intensity
comprises measuring an electric current in the APD.
[0026] According to an embodiment, the first threshold is a
saturation intensity of the APD.
[0027] According to an embodiment, the first and second thresholds
are the same.
BRIEF DESCRIPTION OF FIGURES
[0028] FIG. 1A schematically shows the current-voltage
characteristics of an APD in the linear mode, and in the Geiger
mode.
[0029] FIG. 1B schematically shows the electric current in an APD
as a function of the intensity of light incident on the APD when
the APD is in the linear mode, and a function of the intensity of
light incident on the APD when the APD is in the Geiger mode.
[0030] FIG. 1C schematically shows the electric current through a
SPAD as a function of time.
[0031] FIG. 1D schematically shows a circuit comprising a SPAD.
[0032] FIG. 2 shows a system comprising an APD, according to an
embodiment.
[0033] FIG. 3 schematically shows a flow chart for a method of
using an APD, according to an embodiment.
[0034] FIG. 4 schematically shows a top view of an image sensor
comprising an array of APDs.
[0035] FIG. 5A and FIG. 5B schematically show a cross-sectional
view of an image sensor comprising a plurality of APDs.
[0036] FIG. 6A and FIG. 6B schematically show a cross-sectional
view of an image sensor comprising a plurality of APDs.
[0037] FIG. 7 schematically shows a night vision telescopic sight
comprising an image sensor disclosed herein.
[0038] FIG. 8 schematically shows a pair of night vision goggles
comprising an image sensor disclosed herein.
[0039] FIG. 9 schematically shows a telescope comprising an image
sensor disclosed herein.
DETAILED DESCRIPTION
[0040] A single-photon avalanche diode (SPAD) (also known as a
Geiger-mode APD or G-APD) is an avalanche photodiode (APD) working
under a reverse bias above the breakdown voltage. Here the word
"above" means that absolute value of the reverse bias is greater
than the absolute value of the breakdown voltage. When a photon
incidents on a SPAD, it may generate charge carriers (electrons and
holes). Some of the charge carriers are accelerated by an electric
field in the SPAD and may trigger an avalanche current by impact
ionization. Impact ionization is a process in a material by which
one energetic charge carrier can lose energy by the creation of
other charge carriers. For example, in semiconductors, an electron
(or hole) with enough kinetic energy can knock a bound electron out
of its bound state (in the valence band) and promote it to a state
in the conduction band, creating an electron-hole pair. A SPAD may
be used to detect low intensity light (e.g., down to a single
photon) and to signal the arrival times of the photons with a
jitter of a few tens of picoseconds.
[0041] A SPAD may be in a form of a p-n junction under a reverse
bias (i.e., the p-type region of the p-n junction is biased at a
lower electric potential than the n-type region) above the
breakdown voltage of the p-n junction. The breakdown voltage of a
p-n junction is a reverse bias, above which exponential increase in
the electric current in the p-n junction occurs.
[0042] FIG. 1A schematically shows the current-voltage
characteristics 100 of an APD in the linear mode, and in the Geiger
mode (i.e., when the APD is a SPAD). The APD may have a bifurcation
of the current-voltage characteristics 100 above the breakdown
voltage V.sub.BD (i.e., a SPAD). When the reverse biased is above
V.sub.BD, both electrons and holes may cause significant
ionization, and the avalanche is self-sustaining. When the
avalanche is triggered (e.g., by an incident photon) at a reverse
biased is above V.sub.BD, the avalanche current is sustained
("on-branch" 110); when the avalanche is not triggered at a reverse
biased is above V.sub.BD, very little electric current flows
through ("off-branch" 120). At a reverse bias above V.sub.BD, when
an incident photon triggers avalanche in the APD, the
current-voltage characteristics 100 of the APD transitions (as
indicated by the arrow 130) from the off-branch 120 to the
on-branch 110. This transition manifests as a sharp increase of
electric current flowing through the APD, from essentially zero to
a finite value of I.sub.L. This transition is similar to the
mechanism behind the Geiger counter. Therefore, at a reverse bias
above V.sub.BD, an APD is operating in the "Geiger mode." An APD
working at a reverse bias below the breakdown voltage is operating
in the linear mode because the electric current in the APD is
proportional to the intensity of the light incident on the APD.
[0043] FIG. 1B schematically shows the electric current in an APD
as a function 112 of the intensity of light incident on the APD
when the APD is in the linear mode, and a function 111 of the
intensity of light incident on the APD when the APD is in the
Geiger mode (i.e., when the APD is a SPAD). In the Geiger mode, the
current shows a very sharp increase with the intensity of the light
and then saturation. In the linear mode, the current is essentially
proportional to the intensity of the light.
[0044] FIG. 1C schematically shows the electric current through a
SPAD as a function of time. When light incidents on the SPAD and
triggers the avalanche, a sharp rising edge 131 of the electric
current-time (I-t) curve appears. The electric current quickly
increases from essentially zero to a finite value of I.sub.L. The
electric current maintains at the finite value of I.sub.L, until
the reverse bias on the SPAD is reset to essentially zero.
Resetting the reverse bias on the SPAD to essentially zero may be
referred to as "quenching" the SPAD. Quenching the SPAD manifests
as a falling edge 132 in the I-t curve.
[0045] FIG. 1D schematically shows a circuit comprising a SPAD 142
(i.e., an APD operating in the Geiger mode). The circuit is
configured to quench the SPAD 142. The bias source 140 supplies the
reverse bias to the SPAD 142 through a switch 141. The electric
current through the SPAD 142 is measured by a current meter 143.
The SPAD 142 is connected to ground 144 through the current meter
143. The electric current measured by the current meter 143 is
transmitted to a controller 145. The controller 145 is configured
to quench the SPAD 142. In an example, the controller 145 quenches
the SPAD 142 by opening the switch 141, thereby disconnecting the
bias source 140 from the SPAD, after the controller 145 detects a
rising edge (e.g., rising edge 131) in the electric current
measured by the current meter 143; the controller 145 closes the
switch 141 after quenching the SPAD 142, after which the SPAD is
ready to detect the next incident photon. The dynamic range of the
device shown in FIG. 1D is relatively small. When the average time
interval between two consecutive photons incident on the SPAD 142
is the same as or shorter than the sum of the time 146 (see FIG.
1C) it takes the controller 145 to quench the SPAD 142 (e.g., by
opening the switch 141) after sensing a rising edge 131, and the
time it takes the controller 145 to restore the reverse bias (e.g.,
by closing the switch 141) after the controller 145 quenches the
SPAD 142, the SPAD 142 is saturated. Namely, SPAD 142 cannot
distinguish different intensities of the incident light when the
SPAD 142 is saturated. When the SPAD 142 is not saturated, the
intensity of the incident light can be obtained from the number of
pulses, the number of rising edges, or the number of fall edges in
a given amount of time.
[0046] FIG. 2 shows a system comprising an APD 242, according to an
embodiment. The bias source 240 supplies the reverse bias to the
APD 242. The electric current through the APD 242 is measured by a
current meter 243. The APD 242 is connected to ground 244 through
the current meter 243. The electric current measured by the current
meter 243 is transmitted to a controller 245. The controller 245
controls the reverse bias applied to the APD 242. When the reverse
bias applied to the APD 242 is above V.sub.BD, i.e., when the APD
242 is a SPAD 242, the controller 245 is configured to quench the
SPAD 242. In an example, the controller 145 quenches the SPAD 242
by disconnecting the SPAD 242 from the bias source 240 or setting
the reverse bias to essentially zero (e.g., below 0.1 V), after the
controller 245 detects a rising edge in the electric current
measured by the current meter 243; the controller 245 changes the
reverse bias back above the breakdown voltage V.sub.BD after
quenching the SPAD 242, after which the SPAD 242 is ready to detect
the next incident photon. The controller 245 is also configured to
sense the intensity of the incident light on the SPAD 242. When the
intensity is above a threshold (e.g., when the intensity saturates
the SPAD 242), the controller 245 reduces the reverse bias on the
SPAD 242 to a smaller value below V.sub.BD, i.e., when the SPAD 242
is the APD 242 operating in the linear mode. Here the phrase
"reduce the reverse bias" means reducing the absolute value of the
reverse bias; the word "smaller" as used with respect to the
reverse bias means that the absolute value of the reverse bias is
smaller. The controller 245 is configured to sense the intensity of
the incident light on the APD 242 in the linear mode. When the
intensity is below a threshold (e.g., when the intensity does not
cause saturation if the reverse bias increases above V.sub.BD), the
controller 245 increases the reverse bias on the APD 242 to a
larger value above V.sub.BD (i.e., now the APD 242 is the SPAD
242).
[0047] FIG. 3 schematically shows a flow chart for a method of
using an APD, according to an embodiment. In procedure 310, apply a
reverse bias V1 above the breakdown voltage V.sub.BD of the APD to
the APD. In procedure 320, measure the intensity of light incident
on the APD. For example, when the APD is a SPAD at V1, the
intensity may be measured by counting the number of current pulses
through the APD in a giving amount of time. In procedure 330,
determine whether the intensity measured in procedure 320 is above
a first threshold. For example, the first threshold may be an
intensity that causes saturation of the SPAD. If the intensity is
not above the first threshold, the flow goes back to procedure 310.
If the intensity is above the first threshold, the flow goes to
procedure 340. In procedure 340, apply a reverse bias V2 below the
breakdown voltage V.sub.BD to the APD. In procedure 350, measure
the intensity of light incident on the APD. For example, when the
APD is not a SPAD at V2, the intensity may be measured by measuring
the electric current through the APD. In procedure 360, determine
whether the intensity measured in procedure 350 is below a second
threshold. For example, the first threshold may be an intensity
that does not cause saturation of the SPAD at the reverse bias V1.
If the intensity is not below the second threshold, the flow goes
back to procedure 340. If the intensity is below the second
threshold, the flow goes to procedure 310. The first and second
thresholds may be the same or different.
[0048] FIG. 4 schematically shows a top view of an image sensor 400
comprising an array 410 of APDs. The image sensor 400 has an
electronic system (including e.g., one or more of the controller
245) that is configured to individually control the reverse biases
on the APDs based on the intensities of light incident on the APDs.
The electronic system may be configured to set the reverse biases
differently to different APDs in the array 410. At a given time,
some of the APDs in the array 410 may be operating in the linear
mode, and some may be operating in the Geiger mode (i.e., being
SPADs). The electronic system may be configured to determine the
intensities of light incident on the APDs no matter the APDs
operate in the linear mode or the Geiger mode. The image sensor 400
thus has the combined dynamic ranges of the APDs operating in the
linear mode and the APDs operating in the Geiger mode. When the
image sensor 400 is exposed to a scene that has a portion of high
light intensity that would saturate APDs operating in the Geiger
mode, those APDs in the array exposed to that portion can operate
in the linear mode and the rest of the APDs can operate in the
Geiger mode. The intensity of incident light above which an APD
operating in the Geiger mode is saturated is called the "saturation
intensity" of the APD. The APDs in the array can be controlled
using the method illustrated in FIG. 3. The electronic system can
individually switch the APDs in the array between operating in the
linear mode and operating in the Geiger mode as the scene changes,
based on the intensities of light incident on the APDs. The image
sensor 400 can be configured to output a representation of the
intensities of the light incident on the APDs, without having to
pass the operating modes of the APDs to downstream circuits. The
image sensor 400 may be configured to sense a scene of infrared
light, visible light, ultraviolet light, or X-ray.
[0049] FIG. 5A and FIG. 5B schematically show a cross-sectional
view of an image sensor 500 comprising a plurality of APDs 511. The
APDs 511 may be fabricated in a substrate 510 (e.g., a
semiconductor wafer). One or more vias 512 may be present in the
substrate 510 and the vias 512 electrically connect the APDs 511 to
a surface of the substrate 510. Alternatively, the APDs 511 may be
disposed on the surface of the substrate 510 such that electrical
contacts on the APDs 511 are exposed to the surface. Electronic
systems 521 that communicate and/or control the APDs 511 may be
fabricated in another substrate 520. Electronic systems 521 may
include controllers, bias sources, switches, current meters,
memories, amplifiers or other suitable components. Some components
of the electronic systems 521 may be fabricated in the substrate
510. Electronic systems 521 may be configured to use the APDs 511
using the method illustrated in FIG. 3. One or more vias 522 may be
present and electrically connect the electronic systems 521 to a
surface of the substrate 520. Alternatively, the electronic systems
521 may be disposed at the surface of the substrate 520 such that
electrical contacts on the electronic systems 521 are exposed to
the surface. The substrate 520 may include transmission lines 530
configured to transmit data, power and/or signals to and from the
electronic systems 521, and through which to and from the APDs 511.
The substrates 510 and 520 may be bonded by a suitable substrate
bonding technique, such as flip chip bonding or direct bonding.
[0050] As shown in FIG. 5A and FIG. 5B, flip chip bonding uses
solder bumps 599 deposited onto the surface of either one of the
substrates 510 and 520. Either of the substrates 510 and 520 is
flipped over and the APDs 511 and the electronic systems 521 are
aligned (e.g., through the vias 512, 522 or both). The substrates
510 and 520 are brought into contact. The solder bumps 599 may be
melted to electrically connect the APDs 511 and the electronic
systems 521. Any void space among the solder bumps 599 may be
filled with an insulating material.
[0051] Direct bonding is a wafer bonding process without any
additional intermediate layers (e.g., solder bumps). The bonding
process is based on chemical bonds between two surfaces. Direct
bonding may be at elevated temperature but not necessarily so.
[0052] FIG. 6A and FIG. 6B schematically show a cross-sectional
view of an image sensor 600 comprising a plurality of APDs 611. The
APDs 611 may be fabricated in a substrate 610 (e.g., a
semiconductor wafer). One or more vias 612 may be present in the
substrate 610 and the vias 612 electrically connect the APDs 611 to
a surface of the substrate 610. Alternatively, the APDs 611 may be
disposed on the surface of the substrate 610 such that electrical
contacts on the APDs 611 are exposed to the surface. The substrate
610 may include transmission lines 630. Electronic systems 621 that
communicate and/or control the APDs 611 may be fabricated in
another substrate 620. Electronic systems 621 may include
controllers, bias sources, switches, current meters, memories,
amplifiers or other suitable components. Some components of the
electronic systems 621 may be fabricated in the substrate 610.
Electronic systems 621 may be configured to use the APDs 611 using
the method illustrated in FIG. 3. One or more vias 622 and 623 may
be present and electrically connect the electronic systems 621 to a
surface of the substrate 620. Alternatively, the electronic systems
621 may be disposed at the surface of the substrate 620 such that
electrical contacts on the electronic systems 621 are exposed to
the surface. The substrates 610 and 620 may be bonded by a suitable
substrate bonding technique, such as flip chip bonding or direct
bonding.
[0053] As shown in FIG. 6A and FIG. 6B, flip chip bonding uses
solder bumps 699 and 698 deposited onto the surface of either one
of the substrates 610 and 620. Either of the substrates 610 and 620
is flipped over and the APDs 611 and the electronic systems 621 are
aligned (e.g., through the vias 612, 622 or both). The substrates
610 and 620 are brought into contact. The solder bumps 699 may be
melted to electrically connect the APDs 611 and the electronic
systems 621. The solder bumps 698 may be melted to electrically
connect the electronic systems 620 to the transmission lines 630.
The transmission lines 630 configured to transmit data, power
and/or signals to and from the electronic systems 621, and through
which to and from the APDs 611. Any void space among the solder
bumps 599 and 698 may be filled with an insulating material.
[0054] FIG. 7 schematically shows a night vision telescopic sight
700 comprising an image sensor 730 disclosed herein (e.g., image
sensors 400, 500 or 600). The sight 700 includes one or more
optical (refractive or reflective) components 710 that project a
scene onto the image sensor 730. The image sensor 730 generates
electronic signals representing the scene. The electronic signals
are transmitted to a display 740. The display 740 displays an image
based on the electronic signals. The sight 700 may include one or
more optical (refractive or reflective) components 720 configured
to project the image to a person using the sight.
[0055] FIG. 8 schematically shows a pair of night vision goggles
800 comprising an image sensor 830 disclosed herein (e.g., image
sensors 400, 500 or 600). The goggles 800 include one or more
optical (refractive or reflective) components 810 that project a
scene onto the image sensor 830. The image sensor 830 generates
electronic signals representing the scene. The electronic signals
are transmitted to one or two displays 840. Each of the displays
840 displays an image based on the electronic signals. The goggles
800 may include one or more optical (refractive or reflective)
components 820 configured to project the image to a person using
the goggles.
[0056] FIG. 9 schematically shows a telescope 900 comprising an
image sensor 930 disclosed herein (e.g., image sensors 400, 500 or
600). The telescope 900 includes one or more optical (refractive or
reflective) components 910 that project a scene onto the image
sensor 930. The image sensor 930 generates electronic signals
representing the scene. The electronic signals are transmitted to
one or two displays and/or captured for analysis.
[0057] A spectrometer can include an image sensor disclosed herein
(e.g., image sensors 400, 500 or 600). The spectrometer uses a
prism or a grating to spread the light from a scene into a
spectrum. The spectrum can be projected to the image sensor for
detection.
[0058] A vehicle (e.g., land vehicle, space vehicle, aerial
vehicle, water surface vehicle) may include an image sensor
disclosed herein (e.g., image sensors 400, 500 or 600).
[0059] While various aspects and embodiments have been disclosed
herein, other aspects and embodiments will be apparent to those
skilled in the art. The various aspects and embodiments disclosed
herein are for purposes of illustration and are not intended to be
limiting, with the true scope and spirit being indicated by the
following claims.
* * * * *