U.S. patent application number 17/471074 was filed with the patent office on 2021-12-30 for methods of oled display fabrication suited for deposition of light enhancing layer.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Hyunsung Bang, Chung-Chia Chen, Byung Sung Kwak, Wan-Yu Lin, Robert Jan Visser, Lisong Xu, Gang Yu.
Application Number | 20210408494 17/471074 |
Document ID | / |
Family ID | 1000005830313 |
Filed Date | 2021-12-30 |
United States Patent
Application |
20210408494 |
Kind Code |
A1 |
Yu; Gang ; et al. |
December 30, 2021 |
METHODS OF OLED DISPLAY FABRICATION SUITED FOR DEPOSITION OF LIGHT
ENHANCING LAYER
Abstract
A method for manufacturing an organic light-emitting diode
(OLED) structure includes depositing a light extraction layer (LEL)
over a stack of OLED layers by directing fluid droplets of a LEL
precursor to an array of well structures separated by plateau
areas. Each well structure includes a recess with sidewalls and a
floor, and the plateau areas have rounded top surfaces such that
the droplets of the LEL precursor are guided into recesses of the
well structures. The droplets of the LEL precursor are cured to
solidify the LEL in the recess.
Inventors: |
Yu; Gang; (Santa Barbara,
CA) ; Chen; Chung-Chia; (New Taipei City, TW)
; Lin; Wan-Yu; (Taipei City, TW) ; Bang;
Hyunsung; (Aschaffenburg, DE) ; Xu; Lisong;
(San Jose, CA) ; Kwak; Byung Sung; (Portland,
OR) ; Visser; Robert Jan; (Menlo Park, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
1000005830313 |
Appl. No.: |
17/471074 |
Filed: |
September 9, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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16696971 |
Nov 26, 2019 |
11121345 |
|
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17471074 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2251/5315 20130101;
H01L 51/56 20130101; H01L 51/5275 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 51/56 20060101 H01L051/56 |
Claims
1. A method for manufacturing an organic light-emitting diode
(OLED) structure, the method comprising: depositing a light
extraction layer (LEL) over a stack of OLED layers by directing
fluid droplets of a LEL precursor to an array of well structures
separated by plateau areas, each well structure including a recess
with sidewalls and a floor, and wherein the plateau areas have
rounded top surfaces such that the droplets of the LEL precursor
are guided into recesses of the well structures; and curing the
droplets of the LEL precursor to solidify the LEL in the
recess.
2. The method of claim 1, further comprising: after depositing the
LEL precursor, using an air blade to break connections of the LEL
precursor between adjacent well structures.
3. The method of claim 2, further comprising: delivering a layer of
a fluid precursor of a light extraction layer (LEL) over a stack of
OLED layers that are formed on an array of wells separated by
plateau areas so at least partially the wells; scanning the air
blade across the stack of OLED layers to break connections of the
fluid precursor between adjacent wells; and curing the fluid
precursor to form solidified LEL material in the wells.
4. The method of claim 1, comprising: forming the dielectric layer
on the substrate; forming recesses in the dielectric layer to
provide the array of well structures; and depositing the stack of
OLED layers over the dielectric layer and into the array of well
structures.
5. The method of claim 4, wherein forming the recesses comprises
depositing and patterning the dielectric layer, reflowing the
dielectric layer, and etching to form the recesses in the
dielectric layer and to round the top surface of the plateaus.
6. The method of claim 5, wherein the dielectric layer comprises a
photoresist layer.
7. The method of claim 5, wherein reflowing the photoresist layer
comprises raising a temperature of the dielectric layer
sufficiently close to a glass transition temperature or melting
temperature of the photoresist layer to cause reflowing.
8. The method of claim 1, comprising before depositing the LEL
layer depositing a UV blocking layer, and wherein curing the curing
the droplets of LEL precursor comprises UV-curing.
9. The method of claim 8, comprising depositing the UV-blocking
layer to extend over rounded corners of the plateau areas.
10. The method of claim 1, wherein directing fluid droplets of LEL
precursor comprises droplet ejection printing from a nozzle of a
printhead that scans laterally across the array of well
structures.
11. The method of claim 1, comprising forming the array of well
structures separated by plateau areas by depositing a layer of
polymeric material and patterning the layer of polymeric material
to form recesses that provide the wells.
12. The method of claim 11, comprising heating the patterned layer
of polymeric material to cause reflow of the layer of polymeric
material to form the rounded top surfaces.
13. The method of claim 12, wherein reflow of the layer of
polymeric material causes sloped sidewalls to be formed.
14. The method of claim 1, wherein a peak of the rounded top
surface of the rounded plateau is about 5 to 50% higher than a
depth of the well.
15. A method for manufacturing an organic light-emitting diode
(OLED) structure, the method comprising: depositing a light
extraction layer (LEL) over a stack of OLED layers by directing
fluid droplets of a LEL precursor to an array of well structures
separated by plateau areas, each well structure including a recess
with sidewalls and a floor; and using an air blade to break
connections of the LEL precursor between adjacent well structures
on the plateau areas; and curing the LEL precursor to form
solidified LEL material in the wells.
16. The method of claim 15, wherein the air blade breaks
connections and the LEL precursor accumulates over the well to form
a convex top surface over the well.
17. The method of claim 16, wherein curing the LEL precursor causes
the solidified LEL material to retains the convex top surface.
18. The method of claim 15, wherein the air blade breaks
connections and the LEL precursor accumulates has a generally
planar top surface in the well.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of and claims
priority to U.S. application Ser. No. 16/696,971, filed on Nov. 26,
2019, the disclosure of which is incorporated by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to fabrication of organic
light-emitting diode (OLED) display devices.
BACKGROUND
[0003] An organic light-emitting diode (OLED or Organic LED), also
known as an organic EL (organic electroluminescent) diode, is a
light-emitting diode (LED) in which the emissive electroluminescent
layer is a film of organic compound that emits light in response to
an electric current. This organic layer is situated between two
electrodes; typically, at least one of these electrodes is
transparent. OLEDs are used to create digital displays in devices
such as television screens, computer monitors, portable systems
such as smartwatches, smartphones, handheld game consoles, PDAs,
and laptops.
[0004] An OLED display can be driven with a passive-matrix (PMOLED)
or active-matrix (AMOLED) control schemes. In the PMOLED scheme,
each row (and line) in the display is controlled sequentially, one
by one, whereas AMOLED control uses a thin-film transistor
backplane to directly access and switch each individual pixel on or
off, allowing for faster response, higher resolution, and larger
display sizes.
[0005] AMOLED displays are attractive for high pixel density,
superior image quality, and thin form factor in comparison to
conventional LCD displays. AMOLED displays are self-emissive
devices that can be made with thin film process, on thin and
flexible substrates, and do not require backlights as used in LCD
displays. In addition to superior power efficiency over LCD
devices, AMOLED devices are noted for features such as
"Consuming-Power-only-when-Lighting-Up," and
"Consuming-only-the-needed-Power-Corresponding-to-the-Emitting-Intensity"-
. AMOLED displays have thus been viewed as an attractive display
technology for battery powered portable products.
SUMMARY
[0006] In one aspect, an organic light-emitting diode (OLED)
structure includes a substrate, a dielectric layer on the substrate
having an array of well structures with each well structure
including a recess with side walls and a floor and the recesses are
separated by plateaus having rounded top surfaces, a stack of OLED
layers covering at least the floor of the well, and a light
extraction layer (LEL) in the well over the stack of OLED
layers.
[0007] Implementations may include one or more of the following
features.
[0008] The plateaus may be rounded across an entirety of a width
between side walls of adjacent well structures. The rounded top
surfaces may have a radius of curvature sufficient for a droplet of
material for the LEL layer to slide from the plateaus to the
recess.
[0009] The plateaus may include a flat section and rounded corners
between the flat section and the side wall of the well. The rounded
top surfaces may have a radius of curvature sufficient for a
droplet of material for the LEL layer to slide from the plateaus to
the recess. A peak of the rounded top surface of the rounded
plateaus may be about 5 to 50% higher than the depth of the well.
The rounded corners may have a radius of curvature sufficient for a
droplet of material for the LEL layer to slide from the plateaus to
the recess.
[0010] The OLED structure may include a UV-blocking layer disposed
between the stack of OLED layers and the light extraction layer.
The UV-blocking layer may extend over the rounded top surfaces of
the plateaus.
[0011] In another aspect, a method for manufacturing an organic
light-emitting diode (OLED) structure includes depositing a light
extraction layer (LEL) over a stack of OLED layers by directing
fluid droplets of a LEL precursor to an array of well structures
separated by plateau areas, each well structure including a recess
with sidewalls and a floor, and wherein the plateau areas have
rounded top surfaces such that the droplets of the LEL precursor
are guided into recesses of the well structures, and curing the
droplets of the LEL precursor to solidify the LEL in the
recess.
[0012] Implementations may include one or more of the following
features.
[0013] The method may further include after depositing the LEL
precursor, using an air blade to break connections of the LEL
precursor between adjacent well structures. The method may further
include delivering a layer of a fluid precursor of a light
extraction layer (LEL) over a stack of OLED layers that are formed
on an array of wells separated by plateau areas so at least
partially the wells, scanning the air blade across the stack of
OLED layers to break connections of the fluid precursor between
adjacent wells, and curing the fluid precursor to form solidified
LEL material in the wells.
[0014] The method may further include forming the dielectric layer
on the substrate, forming recesses in the dielectric layer to
provide the array of well structures, and depositing the stack of
OLED layers over the dielectric layer and into the array of well
structures. Forming the recesses may include depositing and
patterning a photoresist layer, reflowing the photoresist layer,
and etching to form the recesses in the dielectric layer and to
round the top surface of the plateaus. The dielectric layer may
include a photoresist layer. Reflowing the photoresist layer may
include raising a temperature of the dielectric layer sufficiently
close to a glass transition temperature or melting temperature of
the photoresist layer to cause reflowing. Before depositing the LEL
layer, the method may include depositing a UV blocking layer, and
wherein curing the curing the droplets of LEL precursor may include
UV-curing. Directing fluid droplets of LEL precursor may include
droplet ejection printing from a nozzle of a printhead that scans
laterally across the array of well structures
[0015] In another aspect, a method for manufacturing an organic
light-emitting diode (OLED) structure includes depositing a light
extraction layer (LEL) over a stack of OLED layers by directing
fluid droplets of a LEL precursor to an array of well structures
separated by plateau areas, each well structure including a recess
with sidewalls and a floor, and using an air blade to break
connections of the LEL precursor between adjacent well structures
on the plateau areas, and curing the LEL precursor to form
solidified LEL material in the wells.
[0016] Implementations may include one or more of the following
features.
[0017] The air blade may break connections and the LEL precursor
may accumulates over the well to form a convex top surface over the
well. The air blade may break connections and the LEL precursor
that accumulates may have a generally planar top surface in the
well.
[0018] Advantages may include, but are not limited to, one or more
of the following.
[0019] In an OLED device one or more layers, e.g., a light
extraction layer (LEL), may be fabricated using UV-curable inks.
This permits the use of droplet ejection techniques that use
UV-curing to deposit the layer(s), which in turn can permit
manufacturing at higher throughput and/or lower cost. Droplets can
be guided into the wells by features on the OLED structures,
permitting the droplet ejection to be performed with lower required
accuracy and thus using less expensive printing machinery.
[0020] The details of one or more aspects of the subject matter
described in this specification are set forth in the accompanying
drawings and the description below. Other features, aspects, and
advantages will become apparent from the description, the drawings,
and the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] FIGS. 1A to 1B show examples of cross-sectional views of a
top emission OLED pixel with a patterned/structured light
extraction layer of index matching material.
[0022] FIG. 1C shows an example of a cross-sectional view of an
array of top emission OLED pixels with the patterned/structured
light extraction layer of index matching material.
[0023] FIG. 2 shows an example of a cross-sectional view of a top
emission OLED pixel with an UV-Blocking layer underneath the
patterned/structured light extraction layer.
[0024] FIGS. 3A-3G show examples of organic materials suitable for
the UV-blocking layer.
[0025] FIGS. 4A to 4B show examples of filling OLED structures with
UV-curable ink droplets.
[0026] FIGS. 5A to 5B show an additional example of filling OLED
structures with UV-curable ink droplets.
[0027] FIGS. 6A to 6B show yet another example of filling OLED
structures with UV-curable ink droplets in a self-aligned
manner.
[0028] FIGS. 7A to 7D illustrate one example of forming the top
surface between the neighboring wells.
[0029] FIG. 8A to 8B show examples of forming the top surface
between neighbor wells by drum printing.
[0030] FIGS. 9A to 9C show an example of slot-die filling with
filler ink of index matching material based on the top surface with
hydrophobic coating.
[0031] Like reference symbols in the various drawings indicate like
elements.
DETAILED DESCRIPTION
[0032] An OLED is a two-terminal thin film device with a stack of
organic layers including a light emitting organic layer sandwiched
between two electrodes. At least one of the electrodes is
transparent, thus allowing the emitted light to pass through.
Typically, an encapsulation or passivation covers the OLED stack.
Due to mismatch of optic parameters in the OLED stack and the
encapsulation or passivation layer thereon, significant efficiency
loss can occur. In addition, in a conventional device configuration
with a stack of planar layers, significant light can be absorbed by
the support substrate or escape at low angles.
[0033] An internal quantum efficiency (IQE) quantifies the ratio of
the number of converted photons and the number of input electrons
whereas the external quantum efficiency (EQE) indicates the ratio
of number of emitted and extracted photons that have been converted
from the number of input electrons. In this context, even though
IQE can be almost perfect, EQE can be far from ideal because
significant amount of emitting light can be trapped inside the OLED
display or waveguided along horizontal direction (in parallel to
the substrate). In one example, even with ideal IQE (e.g., about
100% for phosphorescent materials), an EQE of about 20 to 25% has
been realized in commercial OLED with conventional device
configurations. In addition to optical energy loss to output
emission, the light trapped inside can also be waveguided to
neighbor pixels and can be scattered into front view, causing
"light leakage" or "optical crosstalk", and reducing display
sharpness and contrast.
[0034] Referring to FIGS. 1A to 1C, one solution to this problem is
to form the OLED stack in a well structure 103, with mirrors along
the bottom 103B and portions of the oblique sidewalls 103A of the
well and a patterned light extraction layer 108 filling the well.
Examples of a top-emitting OLED structure are shown in FIGS. 1A and
1B. The OLED structure is formed on a support substrate 100, which
optionally can be removed following the fabrication process.
[0035] The well can be provided by a recess in a dielectric pixel
defining layer (PDL) 111 that is disposed over the support
substrate 100. The pixel defining layer (PDL) 111 can be formed
after a pixel driving circuit made with one or more thin film
transistors (TFTs) is formed on the substrate 100. The PDL 111 can
be a polymeric material, e.g., can be formed by depositing a layer
of photoresist material. The layer of polymeric material is then
selectively patterned to form recesses that will provide the wells.
The top surface PDL provides a plateau that separates the
individual OLED subpixels within the devices.
[0036] A conductive anode 101 is formed at the bottom 103B of or
below the well structure 103. The anode 101 can extend up a portion
of the oblique side walls 103A of the well. The anode 101 can be
silver and/or another reflective conductive material or can be from
a conductive non-reflective material that is coated with a
conductive optically reflective material. In some implementations,
the anode 101 is sufficiently reflective to serve as a mirror.
[0037] The anode 101 can be processed before the PDL 111 and formed
after a thin film transistor (TFT) is formed on substrate 100. For
example, the thin film transistor can include conductive terminals
for the gate, drain and source regions of the transistor. Here, the
anode 101 can be disposed over the TFT and arranged in electrical
contact with the drain of the TFT by, for example, conductive vias
through a dielectric layer.
[0038] As illustrated in FIGS. 1A and 1B, the anode 101 can be
formed after the pixel defining layer (PDL) 111 is deposited and
patterned. A portion 101A of the anode 101 can extend partially or
fully up the oblique sidewalls 103A into the region of the PDL
slope. However, the anode 101 stops short of the top of the recess
(i.e., the top of the plateau). As a result, the mirror provided by
the anode 101 can extend partially or fully up the oblique
sidewalls 103A.
[0039] Alternatively, the anode 101 can be deposited before the PDL
111. A portion of the anode 101 can extend below the pixel defining
layer (PDL) 111. For example, the anode 101 can be deposited only
in the area of the flat bottom region 103B. In this case, a
separate mirror layer can be formed that covers the bottom 103B of
the well and extends partially or fully up the oblique sidewalls
103A.
[0040] Assuming the anode 101 is formed over the PDL 111, a
transparent dielectric layer 102 can be formed over a portion of
the anode 101 and over exposed portions of the PDL 111. The
aperture in the dielectric layer 102 will define an emission area
for the OLED. The dielectric layer 102 can be formed using
photoresist type of material. As illustrated, the dielectric layer
102 can cover the anode 101 at the outer edge of the bottom 103B of
the well and on the oblique sidewalls 103A. But otherwise,
extension of the dielectric layer 102 into the bottom 103B of the
well is generally minimized.
[0041] An OLED layer stack 104 that includes a light emission zone
107 is formed over the anode 101. The OLED layer stack 104, for
example, in a top emitting OLED stack, can include an electron
injection layer (EIL), an electron transport layer, a hole blocking
layer, a light emissive layer (EML), an electron blocking layer
(EBL), a hole transport layer (HTL), and a hole injection layer
(HIL), although this is just one possible set of layers. The lowest
layer of the OLED stack 104 is in electrical contact with the anode
101, either directly or through a conductive mirror layer disposed
on the anode. The portion of the light emissive layer (EML) above
the region of the anode 101 exposed through the aperture in the
dielectric layer 102 can provide the light emission zone 107.
[0042] Another transparent electrode 106, e.g., the cathode, can be
formed over the OLED stack 104. The top layer of the OLED stack 104
is in electrical contact with the cathode 106.
[0043] A capping layer (CPL) can be placed on top of the cathode
106. CPLs are typically organic materials similar to non-EML OLED
layers. A passivation layer can be deposited on the CPL layer.
[0044] The electrode 106 can be a continuous layer covering the
entire display and connecting to all pixels. In comparison, the
anode 101 is not made continuous so that independent control of
each OLED can be achieved. This permits subpixel control; each
pixel can include three subpixels of different colors, e.g., R, G,
and B.
[0045] In implementations in which the anode 101 serves as sidewall
mirrors (e.g., deposited along the slopes of the PDL), the emission
area can be further controlled by placing the dielectric layer 102
over such sidewall mirrors. The extent of the dielectric layer 102
can be varied. In general, OLED emission is highly dependent on
layer thicknesses. The dielectric layer 102 allows suppression of
emission from the OLED structure formed on the sidewalls (during
device fabrication) where the thickness differences between
sidewall and bottom of the well can result in inconsistent emission
characteristics, including emission spectra and color
coordinates.
[0046] The OLED structure further has an index-matching filling
material 108 disposed inside the concave area of well structure
103. The top surface 108a of the index-matching filling
material/layer can be flat (see FIG. 1A) or curved/non-planar (see
FIG. 1B). Through a proper device design, by introducing the mirror
around the OLED emission zone and the light extraction layer
(through index-matching material in the concavity), EQE can be
improved by a factor of 2-3 from the conventional OLED design. As a
result, the power consumption of an OLED display in portable
applications can be reduced by a commensurate factor of 2 to 3,
which allows using a smaller, lighter weight rechargeable battery
and achieves faster charging time than that used in the current
mobile devices such as touch-screen phones, pads, and laptops. In a
similar vein, the same mobile device with high efficient OLED
display can run a much longer time (for example, slightly less than
a factor of 2-3) on a single charge of the original battery.
Another benefit of such highly efficient pixel architecture is
longer lifetime of the devices as the pixels will achieve desired
brightness with lower current and voltage, which leads to lower
degradation phenomena. Yet another benefit is the technical
feasibility of achieving higher pixel density as the higher EQE
enables smaller emitting area to achieve the same brightness as
before.
[0047] However, the newly added light extraction layer (LEL) may
not be manufacturable at a commercially viable price using
conventional techniques. This added layer calls for additional
processes and corresponding tools. In particular, it would be
desirable to deposit the filler layer using droplet ejection
techniques, e.g., a 3D printing techniques using droplet ejection.
The liquid material to be ejected as droplets is often called an
"ink", although it need not (and typically would not) include
pigmentation.
[0048] One type of filling "ink" promising for the LEL is a
solution including organo-metallic molecules or metal-oxide
nano-particles with or without surface passivated with organic
linking units (named "MO ink" in more detail below). This type of
filling ink has high solid loading (e.g., high percentage ratio of
forming solid/ink volume which may be in slurry mixture) and
tunable dielectric constant to potentially maximize the output
emission. The curing method involves exposing the filling inks to
UV radiation along with a duration of post annealing time at an
elevated temperature. Unfortunately, UV exposure dose required for
curing of the LEL precursor material can be harmful to the OLED
structure underneath.
[0049] To address the manufacturing challenge caused by the
UV-curing ink for the index matching material of the light
extracting layer (LEL), the present disclosure proposes solutions
that introduces a UV-blocking layer underneath the LEL layer so
that UV-curable inks can be adopted for the patterned LEL layer
without compromising the performance of the OLED stack underneath.
Both organic and inorganic materials can be used for the
UV-blocking layer.
[0050] In addition, an appropriate surface profile or a hydrophobic
surface can be provided that enables mis-aligned ink droplets
during manufacturing to fall back into the well by means of gravity
and the surface property of the top of the dome (as discussed in
further detail in FIG. 4B below). These techniques can be used in
conjunction with or independent of the UV-blocking layer deposited
over the OLED stack (as discussed in further detail in FIG. 2
below).
[0051] Moreover, with the inkjet process of the present disclosure,
a patterned LEL layer can be formed with a gradient in the index of
refraction. The inkjet printing or slot-die coating with multiple
coating steps enables the patterned LEL with gradient index and
with integration with the covering glass (or touch panel in on-cell
touch configuration).
[0052] FIG. 1C shows the cross-sectional view of an array 110 of
OLED pixels arranged in a layered structure 112 on substrate
100.
[0053] Further referring to FIG. 2, a cross-section view of an OLED
structure 200A illustrates an UV-blocking layer 202 between the
top-surface 104A of the OLED layer 104 and the patterned LEL layer
108. Except as discussed below, the OLED structure 200A can be
similar to the OLED structure 100A and 100B discussed with
reference to FIGS. 1A and 1B. The OLED structure 200A is formed on
a substrate 100 and includes an array of well structures 103, each
including the bottom region 103B and sidewall region 103A. The well
structures 103 are separated by the plateau 105. The floor of each
well structure 103 is a bottom flat surface above substrate 100,
which represents the flat top metal surface formed during thin film
transistor (TFT) circuit process (such as the metal layer used for
source and drain electrode of a thin film transistor TFT). As
discussed above, the dielectric layer 102 is formed on the slopes
of the PDL 111 and extends to the edge area of the bottom region
103B, although extension into the recess bottom region is possible
but generally minimized.
[0054] The anode 101 is formed in the bottom region 1036 and can
extend partially up the sidewalls 103A. As noted above, the anode
101 can be reflective, or can be a conductive non-reflective
material that is coated with a conductive optically reflective
material. Alternatively or additionally, the anode can be a
transparent conductive material deposited over a conductive or
non-conductive reflective layer. For example, the anode 101 can
include conductive indium tin oxide (ITO) deposited on top of a
reflective mirror layer. The anode 101 may also include metals of
lower cost and/or higher conductivity (such as Al).
[0055] A mirror layer 101M can be formed on anode 101, e.g., over
the sidewall portion 101A of the anode 101. Alternatively, if the
anode 101 is formed below the PDL 111, then the mirror layer 101M
can be formed on the PDL 111, e.g., over the sidewall portion 103A
of the well. However, if the anode is formed of a highly reflective
conductive material, e.g., silver (Ag), then the mirror layer may
not be needed. For an anode of an OLED, internal total reflection
is desired.
[0056] In some implementations, the anode is limited to the bottom
region 103B. In some implementations, the anode also extends
partially or fully up the sloped sidewalls 103A of the recess. In
some implementations, the mirror layer 101M is a conductive
reflective metal that extends onto the sloped sidewalls 103A of the
recess. This conductive reflective metal, which is formed on top of
the initial anode, can lead to a potential new anode on the
bottom/floor region of the pixel. As discussed above, a transparent
dielectric layer 102 can be deposited and patterned to eliminate
electrical excitation and light emission from the sidewall region
103A.
[0057] The cathode 106 can be a continuous layer that is
unpatterned and transparent. In a top emitting configuration, the
light extraction layer (LEL) 108 is on top of the UV-blocking layer
202, which, in turn, is on top of the cathode 106. In this
configuration, a passivation layer can be deposited on the capping
layer (CPL) layer which is right above the cathode 106.
[0058] As illustrated in, for example, FIGS. 1A to 1C, the LEL
layer 108 is disposed over the OLED stack 104 and top cathode 106.
The LEL layer 108 at least partially fills each well. In some
implementations, the LEL layer 108A "overfills" the well so as to
form a convex top surface 109 that projects above the top surface
of the plateaus 105.
[0059] Between the top surface 104A the OLED layer stack 104 and
the patterned LEL 108 is a UV-blocking layer 202. The UV-blocking
layer 202 can be formed with a similar process used for forming an
OLED layer (such as physical vapor deposition), or by a different
process (such as chemical vapor deposition). The UV blocking layer
202 can also be formed by a coating method, e.g., spin-coating. The
UV blocking layer 202 has strong absorption at the UV wavelength
used for processing the LEL layer 108/108a (e.g., at least 90% to
100% absorption). The UV-blocking layer 202 can be relatively thin,
e.g., 50 to 500 nm thick. Examples of materials for the UV blocking
layer 202 can be found below. The desired process for depositing
the UV blocking layer may depend on the material chosen. In
general, an evaporative process can be advantageous because
sputtering or chemical vapor deposition (CVD) may lead to
additional device damaging elements (for example, plasma in
sputtering, contaminants and possibly plasma in CVD/PECVD).
[0060] Although a passivation layer can be deposited on the CPL
layer, in some implementations the UV blocking layer also functions
as the passivation layer and a separate passivation layer on the
CPL layer is not required. In this case, the UV blocking layer can
function as permeation blocking layer for the potential wet LEL
deposition, like ink jet printing (IJP).
[0061] Both organic and inorganic materials can be used for the
UV-blocking layer. Example of organic materials that can be used
for UV-blocking layer include:
N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine, TPD(3.18 eV);
N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine,
NPB(3.0 eV); N,N'-Bis(phenanthren-9-yl)-N,N'-bis(phenyl)-benzidine,
PAPB (or PPD); 4,7-Diphenyl-1,10-phenanthroline, BPhen(3.0 eV);
Bis(8-hydroxy-2-methylquinoline)-(4-phenylphenoxy)aluminum,
BAlq(3.0 eV), Tris-(8-hydroxyquinoline)aluminum, Alq(2.8 eV);
Tetracene, C8H12(3.0 eV); 4-phenyl, 4P(3.1 eV); 6-phenyl, 6P(3.1
eV), and the like (number in the bracket representing absorption
edge). The molecular structures of these structures are shown in
FIG. 3.
[0062] This type of organic materials is often known as charge
transport molecules (either hole transport or electron transport)
in the field of organic thin film devices such as organic light
emitting diodes. The energy gap can be tuned to desired wavelength
by molecular structure engineering while maintain the
processability (for example, by thermal deposition) of the
material. Example includes TPD, NPB, and PAPB (or PPD). By
replacing -methylphenyl group with -naphthyl group or -phenanthrene
group, the onset of the absorption band can be effectively tuned.
In addition to tuning the phenyl group, bandgap engineering can
also be achieved by replacing the -H atom on benzene ring with --OH
or --CN group. Another characteristic of this type of organic
materials is the high absorption coefficients. For example,
absorption coefficients over 10.sup.5 cm.sup.-1 are often seen in
this type of molecules due to its direct type of energy gap between
UV absorption bands. At this absorption level, UV radiation
intensity can be attenuated by 10 times with a UV-blocking layer of
100 nm thickness and by 100 times with a UV-blocking film of 200 nm
in thickness. These materials are thus excellent candidates for the
UV-blocking layer (202) underneath the LEL (105/105a). When
selecting the composition with multiple sub-groups comprising
different number of phenyl rings (for example, NPB),
broad-absorption can be achieved over entire UV radiation from a Hg
lamp (from UV-I to UV-III bands). Since the organic material used
for the UV blocking layer can also be used for the charge transport
layer in the OLED stack, the same deposition tool can be used.
[0063] The UV blocking layer can also be formed with another type
of organic molecules known as engineering polymers. Examples
include, but are not limited, polystyrenes, polycarbonates, PMMA
and their derivatives. This type of engineering polymers have
absorption edge close to 3.1 eV and block UV light effectively.
[0064] Examples of inorganic material suitable for the UV-blocking
layer 202 include MoO.sub.3, MnO.sub.2, NiO, WO.sub.3, ZnO, AlZnO,
and alloy oxides comprising these materials. These films can be
fabricated with thermal or other type of physical deposition method
without damaging the OLED device underneath.
[0065] Combination of the materials as discussed above in multiple
layer stack or in blend form can also be used for the UV-absorption
layer 202. The thickness of the UV-blocking layer can be chosen in
range of 50-500 nm, depending on the absorption coefficient of the
UV-blocking layer and the attenuation level for the UV-dose needed
for the LEL ink curing.
[0066] Metal-oxide and/or organometallic compound based LEL layer
105/105a can be formed with inks with corresponding organometallic
precursors, examples of such inks include ZrO, ZrOC, AlO, AlOC,
TiO, TiOC, ZnO, ZnOC, and the combination in blend form (denoted as
MO/MOC inks in the following text). Such compounds are
characterized with refractive index higher than that of the organic
layers in OLED stack. Keeping certain amount of carbon atoms in the
forming LEL (i.e., the metal-OC compounds above) may achieve the
index matching between the LEL and OLED stack. As a reference
point, metal oxide such as ZrO or TiO2 can have refraction index
substantially higher than a target value (for example, n=1.82).
With the amount of carbon (C), the n can be tuned within a range
from approximately 2.2 down to approximately 1.8.
[0067] The solid loading of the metal-oxide nano-particles are
typically in range of 20-80% (e.g., percentage ratio of forming
solid/ink volume). Alcohols such as isopropanol alcohol (IPA) and
glycol ethers such as propylene glycol methyl ether acetate (PGMEA)
can be used as the solvents for this type of MO/MOC inks. To reduce
the damage to the OLED underneath, H.sub.2O molecules can be
removed from the solvent during the ink preparation. Printing the
ink under low humidity (such as under dry air, N.sub.2 or Ar) or
with a moderate substrate temperature in 40-60.degree. C. range may
also be used to minimize performance reduction of the OLED
underneath. In one illustration, using a 1-10 pl nozzle head, a
drop volume may be achieved for the emitting pixels for portable
display products (.about.25 um.times.25 um.times.2
um.about.10.sup.-15 m.sup.3.about.10.sup.-12|=1 pl). Larger nozzle
head can be used for desk-top and wall-hanging displays with larger
pixel pitches. The desirable solid content can be achieved with
smaller nozzle head with multiple ink drops at each stop, or with a
large nozzle head with single drop for each well. Nozzle array is
often used to improve the throughput to achieve .about.1
minute/substrate tact time for mass-production.
[0068] For example, an LEL forming process over the UV-blocking
layer includes a printing process, a solvent removal and pre-dry
process under a moderate temperature (50-100.degree. C.) for a
brief time (a few minutes). Pre-baking in a chamber under
controlled environment and with reduced pressure can reduce the
process time. The dried LEL array can then undergo an UV exposure
for crosslink with dose in .about.0.1-10 J/cm.sup.2. A final
setting process is carried out at elevated temperature (for
example, in 70-130.degree. C. for 5-30 minutes).
[0069] In a 3D printing process, the LEL layer 108 can be formed by
successively depositing and curing multiple sublayers, with the
stack of sublayers providing the LEL layer 108. A sublayer can
correspond to a single scan of a printhead and curing of the
ejected droplets from the printhead. In some implementations, for
each well, a sublayer of the LEL can be formed with multiple drops
of the ink. Alternatively, each sublayer within the LEL layer 108
for a given well can be formed with a single drop per sublayer; due
to surface tension the drop can spread out to cover the width of
the well. In some implementations, the well is filled with the
liquid precursor for the LEL and the entire well is cured at once,
rather than sublayer by sublayer.
[0070] In one example, an ink jet printing process can be used for
each emitting pixel. The cross-section view of an example 3-D
structure is shown in FIG. 4A below. As illustrated, ink droplets
402 are delivered from nozzle head 400 in direction 401 into the
well structure 103. The ink drops may include filler material
having an optical index of, for example, about 1.8 that
substantially matches that of the OLED stack. Such filler material
can also have an optical index higher than that of the OLED
stack.
[0071] With inkjet process of the present disclosure, a patterned
LEL layer can be formed with a gradient from top to bottom in the
index of refraction. In particular, the inkjet printing or slot-die
coating with multiple coating steps enables the patterned LEL with
gradient index and with integration with the covering glass (or
touch panel in on-cell touch configuration). The drops in the
consecutive scans can use inks with a consecutively lower
refraction index than the previous scan (by increasing the C/O
ratio, or by changing MO composition with multiple metals with
different refraction index). The wetting effect of the dropping ink
on the receiving MO/MOC film can be used for further tuning the
gradient profile.
[0072] Eventually a patterned LEL array can be formed with the
refraction index matching to that of the OLED stack (with
refraction index of .about.1.75-1.82), and the index of the LEL top
surface with an index matching to a protection glass (such as, for
example, the Gorilla glass, a Corning brand, used in many mobile
phones with refraction index .about.1.52). For example, the
cross-section profile of the gradient index can be controlled by
ink properties, and by the detail printing conditions. Thus, with a
dedicated design, the desired view angle dependencies can be
achieved for different applications. For example, larger view angle
is preferred for monitors and wall-hanging large size TVs. Narrow
view angle is preferred for entertaining displays in commercial
airplanes. Moderate view angle with strong emission intensity in
front view direction is preferred for palm size mobile phones of
which the optimized front view performance allows longer operation
time per battery charging.
[0073] However, ink droplets 402A may be fired from nozzle head 400
in direction 401A that is mis-aligned such that the ink droplets
402A fail to reach the bottom of well structure 103.
[0074] Various techniques can be used to help guide the ejected
droplets into the wells over the OLED structure. For example,
referring to FIGS. 5A to 5B, an OLED array structure 500 can be
constructed with a flat bottom 103B and tilted side walls 103A in
each well 502. However, the plateaus 105 between the wells have a
convex top surface 501. For example, the plateaus can form a
rounded (such as a dome) surface 501 between adjacent wells. The
PDL plateaus (111) between pixels can be flat in some cases. In
other cases, the sidewalls form a slope that exhibits a decreasing
angle with respect to the substrate as the sidewalls progress from
the bottom of the well to the top of the well. As illustrated, the
rounded top surface has a peak of h.sub.1, measured from a
transition region on the sidewall to the epitome of the dome. The
transition is between the flat side wall and rounded plateaus. The
depth of the well, as measured from the bottom of the well to the
transition region, is illustrated as h.sub.2. In this example,
h.sub.2 can be 5 to 50% of h.sub.1. Here, the curved region PDL
with rounded tops can be formed after baking the PDL at a
temperature close to its glass transition temperature or melting
temperature. The sloped sidewalls are also formed during this
baking process, e.g., by reflow of the PDL material. When ink
printing is performed from a nozzle head 400, ink droplets can be
ejected in direction 401 for delivery toward each well 502. For
those droplets in a slightly mis-aligned direction 402A, these
droplets may follow a tilted trajectory 501A. However, when these
mis-aligned droplets impact the rounded surface 501, the droplets
can roll off the plateau area 105, e.g., under the influence of
gravity, and into the correct well 502. The droplets may also break
off at the plateau area 105 and then fall into the well 502.
[0075] FIGS. 6A to 6B show another example for self-aligning the
filler into the wells. FIG. 6A shows cross-section view of the OLED
structure 600 with top region 550 between neighbor wells arranged
with a coating 550A so that the top surface 550 of the plateau 105
is more hydrophobic to the ink droplet than the bottom and the
tilted side walls 550B in the well. For example, the top surface of
the plateaus can be covered by a coating that is more hydrophobic
than a top surface of the UV blocking layer (or than a top surface
of the OLED structure if the UV blocking layer is not used).
Alternatively, the bottom 103B and tilted side walls 103A can be
coated with a coating that is more hydrophilic than the top surface
550 of the plateaus 105. In either case, the bottom and side walls
of the well are more wetting to the ink droplet than the top
surface 550.
[0076] Hydrophobic molecules tend to be nonpolar and, thus, prefer
other neutral molecules and nonpolar solvents. Because water
molecules are polar, hydrophobes do not dissolve well among them.
Hydrophobic molecules in water often cluster together, forming
micelles. Water on hydrophobic surfaces will exhibit a high contact
angle rather than spreading out. By virtue of the different
coatings for top region 550A and tilted side walls 550B and the
bottom, ink droplets from a nozzle head can be induced to move (see
arrow C in FIG. 6B) in into the well region. A treated top surface
550A with different surface property thus allows the improperly
aimed ink droplets to roll back into the well and preserves high
process yield.
[0077] To add the coating 550A as illustrated in FIGS. 6A to 6B,
various approaches can be used. FIGS. 7A to 7D illustrate one
example of forming the top surface between neighbor wells by
stamping transfer. In FIGS. 7A to 7B, a hydrophobic layer 702 is
formed on stamp plate 701. Thereafter, the loaded stamp plate is
brought in surface contact with a display substrate 704 on which an
array of well structures has been formed, as shown in FIG. 7C. The
stamp plate 701 and the display substrate 704 are then brought
apart. The hydrophobic layer 702 remains on the portions of the
surface that were brought into contact, so that the hydrophobic
material coating 550A for top surface 550 is formed between
neighboring wells, as illustrated in FIG. 7D.
[0078] FIG. 8A to 8B show examples of forming the top surface
between neighbor wells by drum printing. As illustrated by example
800 of FIG. 8A, a cylindrical drum 804 is located on display
substrate on which an array of well structures are formed. The
bottom of cylindrical drum 804 can be positioned to be in surface
contact with the plateau areas (such as plateau 105) of the array
of well structures. As the cylindrical drum 804 spins, droplets of
coating material may be sprayed from delivering head 801 onto the
drum 804, which carries the coating material to a drying zone 803.
Thereafter the coating is carried by the rotating drum 804 into
contact with the plateau areas of the well structures. Once the
coating is printed on the plateau areas, the hydrophobic top
surface 550 is coated. Thereafter, the drum will rotate so that any
coating remaining on the drum will reach a cleaning head 802. The
cleaning head 802 can clean the drum to remove residual coating
material.
[0079] Another example 810 of FIG. 8B shows a drum 816 for forming
top surface 550 that is non-wetting (hydrophobic) to the filler ink
droplet. Drum 816 has a belt structure 817 that moves in direction
815 driven by wheels 813 and 814. In this example 810, delivering
head 811 may spray droplets of coating material on belt structure
817. The coating material may then be transferred to the plateau
areas of the array of well structures on substrate 704. In some
cases, the coating process may be a semi-continuous process that
includes the steps of: (1) coating the source substrate as the drum
rolls, (2) pause under the display substrate when the coating area
of the source substrate can cover the full display substrate, (3)
execute a stamp transfer process, and (4) clean and recoat the
source substrate for the next substrate. This semi-continuous
process is comparable to the example in FIG. 7.
[0080] The hydrophobic top surface can be advantageously used
during manufacturing. FIGS. 9A to 9C show an example 900 of
slot-die filling with filler ink of index matching material. In
this example 900, nozzle head 901 moves along direction 902 to coat
substrate 704 with filler ink, as illustrated in FIG. 9A. As a
result, the filler ink fills the wells of the array on substrate
704 and covers the top surface 550 between neighboring wells, as
shown in FIG. 9B.
[0081] Thereafter, as illustrated in FIG. 9C, an air blade 903 may
move along direction 902 and sweep across the length of the display
substrate 704. The air blade 903 can extend across the width of the
substrate 704. The air blade blows a jet of air 904 toward the
substrate 704. The air jet 904 can be strong enough to dislodge the
thin layer of filler ink located over the top surface of the
plateaus 550, while leaving filler ink in the wells 103. Once this
is performed, the filler ink can remain removed from the top
surface 550 (by virtue of surface tension of ink droplets on a
hydrophobic surface) and can accumulate over the well regions. This
can cause the filler ink to form forming convex surfaces 906A over
each well structure. In some cases, multiple passes of air blade
treatment may be used for process perfection. The filler ink 905
can be cured after the air blade treatment so that the filler
material retains a convex shape 906A over the well structures. As
used herein, the term "exemplary" means "serving as an example,
instance, or illustration," and should not be construed as
preferred or advantageous over other configurations disclosed
herein.
[0082] As used herein, the terms "about" and "approximately" are
meant to cover variations that may exist in the upper and lower
limits of the ranges of values, such as variations in properties,
parameters, and dimensions. In one non-limiting example, the terms
"about" and "approximately" mean plus or minus 10 percent or
less.
[0083] The specific embodiments described above have been shown by
way of example, and it should be understood that these embodiments
may be susceptible to various modifications and alternative forms.
It should be further understood that the claims are not intended to
be limited to the particular forms disclosed, but rather to cover
all modifications, equivalents, and alternatives falling within the
spirit and scope of this disclosure.
* * * * *