U.S. patent application number 17/148976 was filed with the patent office on 2021-12-02 for laser bonding apparatus and method.
This patent application is currently assigned to Samsung Electronics Co., Ltd.. The applicant listed for this patent is Samsung Electronics Co., Ltd.. Invention is credited to Seonyoung KIM, Wooram MYUNG, Young-Chul PARK, Hyesun YOON.
Application Number | 20210370439 17/148976 |
Document ID | / |
Family ID | 1000005382035 |
Filed Date | 2021-12-02 |
United States Patent
Application |
20210370439 |
Kind Code |
A1 |
MYUNG; Wooram ; et
al. |
December 2, 2021 |
LASER BONDING APPARATUS AND METHOD
Abstract
Disclosed are laser bonding apparatuses and methods, The laser
bonding apparatus comprises a stage configured to receive a
substrate, a laser device that may be disposed on the stage and is
configured to irradiate a laser beam onto the substrate, a first
rotation support disposed outside of the stage and is configured to
drivee the laser device to rotate in an azimuthal angle direction,
and a second rotation support configured to support the laser
device and configured to drive the laser device to rotate in a
polar angle direction intersecting the azimuthal angle
direction.
Inventors: |
MYUNG; Wooram; (Suwon-si,
KR) ; KIM; Seonyoung; (Seoul, KR) ; YOON;
Hyesun; (Anyang-si, KR) ; PARK; Young-Chul;
(Cheonan-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Electronics Co., Ltd. |
Suwon-si |
|
KR |
|
|
Assignee: |
Samsung Electronics Co.,
Ltd.
Suwon-si
KR
|
Family ID: |
1000005382035 |
Appl. No.: |
17/148976 |
Filed: |
January 14, 2021 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B23K 26/20 20130101;
B23K 26/103 20130101; B23K 26/0876 20130101 |
International
Class: |
B23K 26/10 20060101
B23K026/10; B23K 26/08 20060101 B23K026/08; B23K 26/20 20060101
B23K026/20 |
Foreign Application Data
Date |
Code |
Application Number |
May 29, 2020 |
KR |
10-2020-0064691 |
Claims
1. A laser bonding apparatus, comprising: a stage configured to
receive a substrate; a laser device on the stage, the laser device
configured to irradiate a laser beam onto the substrate; a first
rotation support outside of the stage, the first rotation support
configured to drive the laser device to rotate in an azimuthal
angle direction; and a second rotation support configured to
support the laser device and configured to drive the laser device
to rotate in a polar angle direction intersecting the azimuthal
angle direction.
2. The laser bonding apparatus of claim 1, wherein the first
rotation support has a circular ring shape.
3. The laser bonding apparatus of claim 1, wherein the second
rotation support includes: a plurality of axle parts associated
with opposite outer sidewalls of the first rotation support; and an
arc part connected between the axle parts, the arc part supporting
the laser device.
4. The laser bonding apparatus of claim 3, wherein the laser device
is configured to move along a bottom surface or an inner sidewall
of the arc part.
5. The laser bonding apparatus of claim 3, wherein the arc part has
a first contact point between the laser device and one of the
plurality of axle parts.
6. The laser bonding apparatus of claim 5, further comprising a
plurality of guides with which the first rotation support is
provided on an inner sidewall adjacent to one of the plurality of
axle parts, wherein the plurality of guides have second contact
points arranged in the polar angle direction at a regular angle or
interval to correspond to the first contact point.
7. The laser bonding apparatus of claim 6, wherein each of the
plurality of guides has a finger shape or a quarter-sphere
shape.
8. The laser bonding apparatus of claim 6, further comprising: a
first rotation driver in contact with an outer sidewall of the
first rotation support, the first rotation driver configured to
drive the first rotation support to rotate in the azimuthal angle
direction; and a second rotation driver associated with one of the
plurality of axle parts of the second rotation support, the second
rotation driver configured to drive the arc part to rotate in the
polar angle direction.
9. The laser bonding apparatus of claim 8, wherein the first
rotation driver includes: a motor; and a pulley connected to the
motor, the pulley configured to produce friction with a sidewall of
the second rotation support and configured to rotate the second
rotation support.
10. The laser bonding apparatus of claim 8, further comprising a
controller connected to the first and second rotation drivers and
the first and second contact points, wherein, whenever the first
contact point is electrically connected to one of the second
contact points, the controller is configured to distinguish an
inclined angle in the polar angle direction of the laser device
with respect to the semiconductor chips.
11. A laser bonding apparatus, comprising: a stage configured to
receive a substrate; a laser device on the stage, the laser device
configured to provide the substrate with a laser beam to heat a
plurality of semiconductor chips; a first rotation support that
surrounds the stage and supports the laser device, the first
rotation support configured to drive the laser device to rotate in
an azimuthal angle direction; a second rotation support that
includes a plurality of axle parts associated with opposite outer
sidewalls of the first rotation support and an arc part connected
between the plurality of axle parts, the arc part having a first
contact point between the laser device and one of the plurality of
axle parts; a plurality of guides with which the first rotation
support is provided on an inner sidewall under the second rotation
support, the guides having a plurality of second contact points
that are arranged in a polar angle direction to correspond to the
first contact point; and a controller connected to the first
contact point and the second contact points, the controller
configured to distinguish an inclined angle in the polar angle
direction of the laser device with respect to the semiconductor
chips whenever the first contact point is connected to one of the
second contact points.
12. The laser bonding apparatus of claim 11, wherein the plurality
of guides include a first guide arranged in a direction
perpendicular to the stage.
13. The laser bonding apparatus of claim 12, wherein the plurality
of guides further include: a second guide arranged in a direction
inclined at about 30.degree. relative to the direction
perpendicular to the stage; and a third guide arranged in a
direction inclined at about 60.degree. relative to the direction
perpendicular to the stage.
14. The laser bonding apparatus of claim 11, further comprising: a
first rotation driver in contact with an outer sidewall of the
first rotation support, the first rotation driver configured to
drive the first rotation support to rotate in the azimuthal angle
direction; and a second rotation driver associated with one of the
axle parts of the second rotation support, the second rotation
driver configured to drive the arc part to rotate in the polar
angle direction.
15. The laser bonding apparatus of claim 14, wherein the first
rotation driver includes: a motor; and a pulley connected to the
motor, the pulley configured to produce friction with a sidewall of
the second rotation support and configured to rotate the second
rotation support.
16. A laser bonding method, comprising: stacking a plurality of
semiconductor chips on a substrate; and providing a laser beam to
the plurality of semiconductor chips, wherein providing the laser
beam to the plurality of semiconductor chips includes irradiating
the laser beam onto sidewalls of the plurality of semiconductor
chips.
17. The laser bonding method of claim 16, wherein irradiating the
laser beam onto the sidewalls of the plurality of semiconductor
chips includes allowing a laser device to rotate in a polar angle
direction to provide the sidewalls of the semiconductor chips with
the laser beam slantingly irradiated in the polar angle
direction.
18. The laser bonding method of claim 17, wherein irradiating the
laser beam onto the sidewalls of the plurality of semiconductor
chips further includes allowing the laser device to rotate in an
azimuthal angle direction to provide the laser beam onto entire
sidewalls of the semiconductor chips.
19. The laser bonding method of claim 16, wherein providing the
laser beam to the plurality of semiconductor chips further
includes: determining whether the semiconductor chip is provided in
plural; and when one semiconductor chip is provided, providing a
top surface of the semiconductor chip with the laser beam
irradiated in a vertical direction.
20. The laser bonding method of claim 16, wherein the laser beam is
slantingly irradiated in a polar angle direction in proportion to
the number or height of the semiconductor chips.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This U.S. nonprovisional application claims priority under
35 U.S.C .sctn. 119 to Korean Patent Application No.
10-2020-0064691 filed on May 29, 2020 in the Korean Intellectual
Property Office, the disclosure of which is hereby incorporated by
reference in its entirety.
BACKGROUND
[0002] The present inventive concepts relate to semiconductor
fabrication apparatuses and methods, and more particularly, to
laser bonding apparatuses and methods.
[0003] There has recently been an increasing tendency to require a
flip-chip type substrate among printed circuit boards. The
flip-chip type substrate is a product in which solder bumps are
used to replace the conventional wires and to connect a
semiconductor chip to the substrate. The solder bumps may be melted
with radiation heat from the laser or Joule's heat from electric
power to thereby bond the semiconductor chip to the substrate.
SUMMARY
[0004] Some example embodiments of the present inventive concepts
provide laser bonding apparatuses and methods capable of removing
or minimizing bonding defects of a plurality of semiconductor
chips.
[0005] According to some example embodiments of the present
inventive concepts, a laser bonding apparatus may comprise: a stage
configured to receive a substrate; a laser device on the stage, the
laser device configured to irradiate a laser beam onto the
substrate; a first rotation support outside of the stage, the first
rotation support configured to drive the laser device to rotate in
an azimuthal angle direction; and a second rotation support
configured to support the laser device and configured to drive the
laser device to rotate in a polar angle direction intersecting the
azimuthal angle direction.
[0006] According to some example embodiments of the present
inventive concepts, a laser bonding apparatus may comprise: a stage
configured to receive a substrate; a laser device on the stage, the
laser device configured to provide the substrate with a laser beam
to heat a plurality of semiconductor chips; a first rotation
support configured to surround the stage and configured to support
the laser device, the first rotation support configured to drive
the laser device to rotate in an azimuthal angle direction; a
second rotation support that includes a plurality of axle parts
associated with opposite outer sidewalls of the first rotation
support and an arc part connected between the plurality of axle
parts, the arc part having a first contact point between the laser
device and one of the plurality of axle parts; a plurality of
guides with which the first rotation support is provided on an
inner sidewall under the second rotation support, the guides having
a plurality of second contact points that are arranged in a polar
angle direction to correspond to the first contact point; and a
controller connected to the first contact point and the second
contact points, the controller configured to distinguish an
inclined angle in the polar angle direction of the laser device
with respect to the semiconductor chips whenever the first contact
point is connected to one of the second contact points.
[0007] According to some example embodiments of the present
inventive concepts, a laser bonding method may comprise: stacking a
plurality of semiconductor chips on a substrate; and providing a
laser beam to the plurality of semiconductor chips. The operation
of providing the laser beam to the plurality of semiconductor chips
may include irradiating the laser beam onto sidewalls of the
plurality of semiconductor chips.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 illustrates a perspective view showing a laser
bonding apparatus according to some example embodiments of the
present inventive concepts.
[0009] FIG. 2 illustrates a side view showing an example of a
second rotation support depicted in FIG. 1.
[0010] FIG. 3 illustrates a plan view showing an example of a laser
device that rotates in an azimuthal angle direction along a first
rotation support depicted in FIG. 1.
[0011] FIG. 4 illustrates a side view showing an example of a laser
device fixed to a center of an arc part of a second rotation
support depicted in FIG. 1.
[0012] FIG. 5 illustrates a side view showing an example of a laser
device that moves along an arc part of a second rotation support
depicted in FIG. 1.
[0013] FIG. 6 illustrates a side view showing an example of a
plurality of laser devices that move along a second rotation
support depicted in FIG. 1.
[0014] FIG. 7 illustrates a perspective view showing a laser
bonding apparatus according to some example embodiments of the
present inventive concepts.
[0015] FIG. 8 illustrates a side view showing an example of guides
depicted in FIG. 7.
[0016] FIG. 9 illustrates a flow chart showing a laser bonding
method according to some example embodiments of the present
inventive concepts.
[0017] FIGS. 10 and 11 illustrate cross-sectional views showing a
laser bonding method performed on semiconductor chips depicted in
FIG. 1.
[0018] FIG. 12 illustrates a flow chart showing an example of an
operation of providing a laser beam to bond semiconductor chips of
FIG. 11 to a substrate.
[0019] FIG. 13 illustrates a flow chart showing an example of an
operation of irradiating a laser beam onto sidewalls of
semiconductor chips depicted in FIG. 11.
DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS
[0020] FIG. 1 shows an example of a laser bonding apparatus 100
according to the present inventive concepts.
[0021] Referring to FIG. 1, the laser bonding apparatus 100
according to the present inventive concepts may include a stage 10,
a laser device 20, a first rotation support 30, and/or a second
rotation support 40.
[0022] The stage 10 may receive a substrate 12. The substrate 12
may include a printed circuit board (PCB). Alternatively, the
substrate 12 may include a silicon wafer or a silicon chip, but the
present inventive concepts are not limited thereto. A plurality of
semiconductor chips 14 may be provided on the substrate 12. The
plurality of semiconductor chips 14 may be stacked or mounted in a
third direction Z. For example, the plurality of semiconductor
chips 14 may include a high bandwidth memory and/or a
package-on-package. Each of the plurality of semiconductor chips 14
may have, for example, a plurality of solder bumps 16 at a lower
portion thereof. Although not shown, the stage 10 may move along at
least one rail therebelow. The rail may extend in a first direction
X or a second direction Y. The stage 10 may allow the substrate 12
to move along the rail in the first direction X or the second
direction Y.
[0023] The stage 10 may be provided thereon with the laser device
20 that is supported by the first rotation support 30 and the
second rotation support 40. For example, the laser device 20 may be
an infrared laser device. The laser device 20 may output a laser
beam 22 whose power ranges from about 1 W to about 4,000 W. The
laser beam 22 may have a wavelength of about 600 nm to about 1,700
nm. The laser device 20 may provide the plurality of semiconductor
chips 14 with the laser beam 22 whose radiation heat is used to
heat up the semiconductor chips 14 and the solder bumps 16. The
heated solder bumps 16 may be melted to bond the semiconductor
chips 14 to each other and/or to the substrate 12.
[0024] The first rotation support 30 and the second rotation
support 40 may drive the laser device 20 to slantingly move with
respect to the semiconductor chips 14 stacked on the stage 10, and
thus the laser device 20 may illuminate the laser beam 22 onto
sidewalls or side surfaces of the semiconductor chips 14. For
example, the first rotation support 30 may drive the laser device
20 to rotate in an azimuthal angle direction .PHI., and the second
rotation support 40 may drive the laser device 20 to rotate in a
polar angle direction .theta.. The laser beam 22 may uniformly heat
the solder bumps 16 between the plurality of semiconductor chips
14, and may prevent or minimize bonding defects of the plurality of
semiconductor chips 14.
[0025] The first rotation support 30 may be located outside the
stage 10. For example, the first rotation support 30 may have a
circular ring shape. When the stage 10 is provided on a center of
the first rotation support 30, the first rotation support 30 may
drive both the second rotation support 40 and the laser device 20
to rotate in the azimuthal angle direction .PHI.. The azimuthal
angle direction .PHI. may be defined on a plane formed by the first
direction X and the second direction Y. The first rotation support
30 may rotate in the azimuthal angle direction .PHI. on the plane
formed by the first direction X and the second direction Y.
[0026] The second rotation support 40 may support the laser device
20 onto the first rotation support 30. The second rotation support
40 may be associated with opposite outer sidewalls of the first
rotation support 30. The second rotation support 40 may include,
for example, a plurality of axle parts 42 and an arc part 44. The
axle parts 42 may be associated with the opposite outer sidewalls
of the first rotation support 30. The axle parts 42 may be provided
at opposite ends of the second rotation support 40, and may be
rotationally coupled to the opposite outer sidewalls of the first
rotation support 30. For example, each of the axle parts 42 may
include a shaft. The arc part 44 may be connected between the axle
parts 42. The arc part 44 may rotate in the polar angle direction
.theta. about a central axis that passes through the axle parts 42.
The arc part 44 may support the laser device 20. The laser device
20 may be located on a center of a bottom surface of the arc part
44.
[0027] FIG. 2 shows an example of the second rotation support 40
depicted in FIG. 1.
[0028] Referring to FIG. 2, the arc part 44 of the second rotation
support 40 may drive the laser device 20 to rotate in the polar
angle direction .theta. relative to the third direction Z. The
polar angle direction .theta. may indicate an inclined direction of
the arc part 44 and the laser device 20 relative to the third
direction Z. For example, the arc part 44 of the second rotation
support 40 may rotate about 0.degree. to about 90.degree. in the
polar angle direction .theta. relative to the third direction Z
perpendicular to the first rotation support 30. When the arc part
44 causes the laser device 20 to tilt in the polar angle direction
.theta., the laser beam 22 may be provided onto the sidewalls of
the semiconductor chips 14.
[0029] Referring back to FIG. 1, a diameter direction r may
indicate a direction that defines a distance between the laser
device 20 and the semiconductor chips 14. The laser beam 22 may
provide the semiconductor chips 14 with radiation heat without loss
regardless of the distance between the laser device 20 and the
semiconductor chips 14. This may be due to the fact that the laser
beam 22 has directionality without radial radiation and propagates
distantly regardless of the distance defined by the diameter
direction r.
[0030] FIG. 3 shows an example of the laser device 20 that rotates
in the azimuthal angle direction .PHI. along the first rotation
support 30 depicted in FIG. 1.
[0031] Referring to FIG. 3, when the arc part 44 of the second
rotation support 40 tilts in the polar angle direction .theta., and
when the first rotation support 30 rotates in the azimuthal angle
direction .PHI., the laser device 20 may irradiate the laser beam
22 onto entire, or almost entire, sidewalls of the semiconductor
chips 14. The laser device 20 may rotate about 360.degree. in the
azimuthal angle direction .PHI. along the sidewalls of the
semiconductor chips 14. The laser beam 22 may uniformly heat the
semiconductor chips 14 and the solder bumps 16, thereby preventing
or minimizing bonding defects.
[0032] FIG. 4 shows an example of the laser device 20 fixed to a
center of the arc part 44 of the second rotation support 40
depicted in FIG. 1.
[0033] Referring to FIG. 4, the laser device 20 may be fixed to the
center of the bottom surface of the arc part 44. For example, the
laser device 20 may provide one semiconductor chip 14 with the
laser beam 22 in a direction opposite to the third direction Z.
When the plurality of semiconductor chips 14 are provided with the
laser beam 22 in a direction opposite to the third direction Z, the
plurality of semiconductor chips 14 and the solder bumps 16 may be
irregularly heated to produce bonding defects. An uppermost one of
the plurality of semiconductor chips 14 may be more highly heated
than its underlying semiconductor chips, and thus the solder bumps
16 may be irregularly melted in a direction opposite to the third
direction Z, which may result in the presence of bonding defects
between the substrate 12 and the semiconductor chips 14.
[0034] FIG. 5 shows an example of the laser device 20 that moves
along the arc part 44 of the second rotation support 40 depicted in
FIG. 1.
[0035] Referring to FIG. 5, the laser device 20 may move along the
bottom surface or an inner sidewall of the arc part 44 of the
second rotation support 40 to provide the laser beam 22 to the
sidewalls of the plurality of semiconductor chips 14. The laser
device 20 may move in the polar angle direction .theta. relative to
the third direction Z. Although not shown, the arc part 44 may have
a moving driver therein. The moving driver may drive the laser
device 20 to move along the bottom surface or the inner sidewall of
the arc part 44.
[0036] FIG. 6 shows an example of a plurality of laser devices 20
that move along the second rotation support 40 depicted in FIG.
1.
[0037] Referring to FIG. 6, the plurality of laser devices 20 may
move toward opposite sides of the arc part 44 of the second
rotation support 40 to provide the laser beams 22 to opposite
sidewalls of the plurality of semiconductor chips 14. The laser
beams 22 may uniformly heat the solder bumps 16 to bond the
semiconductor chips 14 and the substrate 12 to each other without
defects. Although not shown, the arc part 44 may have therein
moving drivers that drive the plurality of laser devices 20 to move
along the bottom surface or the inner sidewall of the arc part
44.
[0038] FIG. 7 shows an example of the laser bonding apparatus 100
according to the present inventive concepts.
[0039] Referring to FIG. 7, the laser bonding apparatus 100
according to the present inventive concepts may further include a
first rotation driver 50, a second rotation driver 60, a plurality
of guides 70, and/or a controller 80. The stage 10 and the laser
device 20 may be configured identically to those of FIG. 1.
[0040] The first rotation driver 50 may be located adjacent to the
first rotation support 30. The first rotation driver 50 may drive
the first rotation support 30 to rotate in the azimuthal angle
direction .PHI.. The first rotation driver 50 may include a first
motor 52 and a pulley 54. The first motor 52 may be connected to
the controller 80. The first motor 52 may generate a rotation power
in response to a control signal from the controller 80. The pulley
54 may be connected to a central shaft of the first motor 52. The
pulley 54 may be in contact with an outer sidewall of the first
rotation support 30. When the first motor 52 generates the rotation
power, the pulley 54 may produce friction with the first rotation
support 30 and may force the first rotation support 30 to rotate in
the azimuthal angle direction .PHI..
[0041] The second rotation driver 60 may be associated with one
side of the second rotation support 40. For example, the second
rotation driver 60 may be associated with one of the axle parts 42
of the second rotation support 40. The second rotation driver 60
may include a second motor. The second rotation driver 60 may be
connected to the controller 80. In response to a control signal
from the controller 80, the second rotation driver 60 may drive the
second rotation support 40 to cause its axle parts 42 and the arc
part 44 to rotate in the polar angle direction .theta..
[0042] A first contact point 46 may be provided on the bottom
surface or the inner sidewall of the arc part 44 of the second
rotation support 40. The first contact point 46 may be disposed
between the laser device 20 and one of the axle parts 42. The first
contact point 46 may be connected to the controller 80.
[0043] The guides 70 may be placed under the arc part 44. The first
rotation support 30 may be provided with the guides 70 coupled to
its inner sidewall adjacent to one of the axle parts 42 of the
second rotation support 40. Alternatively, the guides 70 may be
installed on the first rotation support 30 under the arc part 44.
The guides 70 may each have a finger shape or a quarter-sphere
shape. The guides 70 may have their second contact points 78. The
second contact points 78 may be arranged in the polar angle
direction .theta. at a regular angle and/or interval. The second
contact points 78 may be connected to the controller 80. Whenever
the arc part 44 rotates in the polar angle direction .theta., one
of the second contact points 78 may be electrically connected to
the first contact point 46. The controller 80 may be configured
such that an electrical connection signal between the first contact
point 46 and one of the second contact points 78 is detected to
distinguish a rotation angle in the polar angle direction .theta.
of the arc part 44. For example, the controller 80 may distinguish
an inclined angle in the polar angle direction .theta. of the laser
device 20 with respect to the semiconductor chips 14.
[0044] FIG. 8 shows an example of the guides 70 depicted in FIG.
7.
[0045] Referring to FIG. 8, the guides 70 may include a first guide
72, a second guide 74, and/or a third guide 76. The first guide 72
may be arranged in the third direction Z. The second guide 74 may
be arranged inclined at about 30.degree. in the polar angle
direction .theta. relative to the third direction Z. The third
guide 76 may be arranged inclined at about 60.degree. in the polar
angle direction .theta. relative to the third direction Z. The
first, second, and third guides 72, 74, and 76 may each have the
second contact point 78. When the arc part 44 overlaps one of the
first, second, and third guides 72, 74, and 76, the first contact
point 46 may be electrically connected to the second contact point
78.
[0046] The controller 80 may control such that the first and second
rotation drivers 50 and 60 drive the laser device 20 to rotate in
the azimuthal angle direction .PHI. and the polar angle direction
.theta. with respect to the substrate 12. For example, the
controller 80 may operate to provide the semiconductor chips 14
with the laser beam 22 irradiated vertically or slantingly based on
the number or height of the semiconductor chips 14 on the substrate
12. In addition, the controller 80 may use an electrical connection
signal between the first and second contact points 46 and 78 to
distinguish an inclined angle in the polar angle direction .theta.
of the laser device 20 with respect to the semiconductor chips
14.
[0047] The controller 80 may include or be implemented in
processing circuitry such as hardware including logic circuits; a
hardware/software combination such as a processor executing
software; or a combination thereof. For example, the processing
circuitry more specifically may include, but is not limited to, a
central processing unit (CPU), an arithmetic logic unit (ALU), a
digital signal processor, a microcomputer, a field programmable
gate array (FPGA), a System-on-Chip (SoC), a programmable logic
unit, a microprocessor, application-specific integrated circuit
(ASIC), etc.
[0048] When an electrical connection is made between the second
contact point 78 of the first guide 72 and the first contact point
46 of the arc part 44, the controller 80 may distinguish that the
semiconductor chips 14 are provided with the laser beam 22
irradiated in the third direction Z. When the first contact point
46 is connected to the second contact point 78 of the second guide
74, the controller 80 may distinguish that the semiconductor chips
14 are provided with the laser beam 22 irradiated at an inclined
angle of about 30.degree. in the polar angle direction .theta..
When the first contact point 46 is connected to the second contact
point 78 of the third guide 76, the controller 80 may distinguish
that the semiconductor chips 14 are provided with the laser beam 22
irradiated at an inclined angle of about 60.degree. in the polar
angle direction .theta..
[0049] The following will discuss a laser bonding method using the
laser bonding apparatus 100 configured as described above.
[0050] FIG. 9 shows a laser bonding method according to some
example embodiments the present inventive concepts. FIGS. 10 and 11
show cross-sectional views of a laser bonding method performed on
the semiconductor chips 14 depicted in FIG. 1.
[0051] Referring to FIGS. 9 and 10, a picker (not shown) may stack
or mount a plurality of semiconductor chips 14 on the substrate 12
(S10). For example, the plurality of semiconductor chips 14 may
include a high bandwidth memory and/or a package-on-package. For
example, each of the plurality of semiconductor chips 14 may have a
plurality of solder bumps 16. The plurality of solder bumps 16 may
be provided between the substrate 12 and the semiconductor chips
14. In addition, the plurality of solder bumps 16 may be provided
between the plurality of semiconductor chips 14. For example, the
semiconductor chips 14 and the solder bumps 16 may define a first
height H1 from the substrate 12.
[0052] Referring to FIGS. 9 and 11, the laser bonding apparatus 100
may provide the plurality of semiconductor chips 14 with the laser
beam 22 to bond the semiconductor chips 14 to the substrate 12
(S20). The laser beam 22 may heat the plurality of semiconductor
chips 14 and the solder bumps 16. The solder bumps 16 may be melted
with radiation heat from the laser beam 22 to bond the
semiconductor chips 14 to the substrate 12. The bonded
semiconductor chips 14 and the solder bumps 16 may define a second
height H2 less than the first height H1.
[0053] FIG. 12 shows an example of the operation S20 of providing
the semiconductor chips 14 depicted in FIG. 11 with the laser beam
22 to bond the semiconductor chips 14 to the substrate 12.
[0054] Referring to FIG. 12, a picker (not shown) may provide the
substrate 12 onto the stage 10 (S22). The stage 10 may drive the
substrate 12 to move into the first rotation support 30.
[0055] Afterwards, the controller 80 may determine how many
semiconductor chips 14 are provided by using information about the
number and/or height of the semiconductor chips 14 on the substrate
12 (S24).
[0056] Referring to FIGS. 4 and 12, when one semiconductor chip 14
is provided on the substrate 12, the laser bonding apparatus 100
may provide the semiconductor chip 14 on its top surface with the
laser beam 22 irradiated in the third direction Z (S26). The laser
beam 22 may heat the semiconductor chip 14 and the solder bumps 16
to bond the semiconductor chip 14 to the substrate 12. The laser
beam 22 may be irradiated in a direction opposite to the third
direction Z, but the present inventive concepts are not limited
thereto.
[0057] Referring to FIGS. 1, 7, and 12, when the semiconductor chip
14 is provided in plural, the laser bonding apparatus 100 may
irradiate the laser beam 22 onto sidewalls of the plurality of
semiconductor chips 14 (S28).
[0058] FIG. 13 shows an example of operation S28 of irradiating the
laser beam 22 onto the sidewalls of the semiconductor chips 14
depicted in FIG. 11.
[0059] Referring to FIGS. 2, 7, 8, and 13, the controller 80 and
the second rotation driver 60 may drive the laser device 20 to
rotate in the polar angle direction .theta. to slantingly
(>0.degree. to .ltoreq.90.degree.) irradiate the laser beam 22
onto the sidewall of the semiconductor chips 14 (S30). For example,
the laser beam 22 may be slantingly irradiated in the polar angle
direction .theta. in proportion to the number and/or height of the
semiconductor chips 14. When about four semiconductor chips 14 are
stacked on the substrate 12, the semiconductor chips 14 may be
provided on their sidewalls with the laser beam 22 irradiated at an
inclined angle of about 30.degree. in the polar angle direction
.theta.. When about five semiconductor chips 14 are stacked on the
substrate 12, the semiconductor chips 14 may be provided on their
sidewalls with the laser beam 22 irradiated at an inclined angle of
about 60.degree. in the polar angle direction .theta..
[0060] Referring to FIGS. 3, 7, and 13, the controller 80 and the
first rotation driver 50 may drive the laser device 20 to rotate in
the polar angle direction .theta. to irradiate the laser beam 22
onto the entire sidewalls of the semiconductor chips 14 (S32). The
laser device 20 may rotate in the azimuthal angle direction .PHI.
at about 360.degree. to irradiate the laser beam 22 onto the entire
sidewalls of the semiconductor chips 14. The solder bumps 16 may be
uniformly melted to bond the semiconductor chips 14 to the
substrate 12.
[0061] As discussed above, a laser bonding apparatus according to
some example embodiments of the present inventive concepts may be
configured such that a plurality of semiconductor chips are
provided on their sidewalls with a laser beam that is slantingly
irradiated to remove and minimize bonding defects of the plurality
of semiconductor chips.
[0062] Although the present inventive concepts have been described
in connection with the embodiments of the present inventive
concepts illustrated in the accompanying drawings, it will be
understood to those skilled in the art that various changes and
modifications may be made without departing from the technical
spirit and essential feature of the present inventive concepts. It
therefore will be understood that the embodiments described above
are just illustrative but not limitative in all aspects.
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