U.S. patent application number 17/141461 was filed with the patent office on 2021-10-21 for semiconductor device, inspection apparatus of semiconductor device, and method for inspecting semiconductor device.
This patent application is currently assigned to KABUSHIKI KAISHA TOSHIBA. The applicant listed for this patent is KABUSHIKI KAISHA TOSHIBA. Invention is credited to Yosuke KAJIWARA, Masahiko KURAGUCHI.
Application Number | 20210327711 17/141461 |
Document ID | / |
Family ID | 1000005342158 |
Filed Date | 2021-10-21 |
United States Patent
Application |
20210327711 |
Kind Code |
A1 |
KAJIWARA; Yosuke ; et
al. |
October 21, 2021 |
SEMICONDUCTOR DEVICE, INSPECTION APPARATUS OF SEMICONDUCTOR DEVICE,
AND METHOD FOR INSPECTING SEMICONDUCTOR DEVICE
Abstract
According to one embodiment, a semiconductor device includes a
first transistor, and a first mounting member. The first transistor
includes a nitride semiconductor layer and includes a first element
electrode, a second element electrode, and a third element
electrode. The first mounting member includes a first frame
electrode, a plurality of first frame connection members
electrically connecting the first element electrode and the first
frame electrode, a first pad electrode, and a first pad connection
member electrically connecting the first element electrode and the
first pad electrode.
Inventors: |
KAJIWARA; Yosuke; (Yokohama,
JP) ; KURAGUCHI; Masahiko; (Yokohama, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KABUSHIKI KAISHA TOSHIBA |
Tokyo |
|
JP |
|
|
Assignee: |
KABUSHIKI KAISHA TOSHIBA
Tokyo
JP
|
Family ID: |
1000005342158 |
Appl. No.: |
17/141461 |
Filed: |
January 5, 2021 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/2003 20130101;
H01L 29/40 20130101; H01L 29/04 20130101; H01L 21/02458
20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02; H01L 29/20 20060101 H01L029/20; H01L 29/40 20060101
H01L029/40; H01L 29/04 20060101 H01L029/04 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 15, 2020 |
JP |
2020-072779 |
Claims
1. A semiconductor device, comprising: a first transistor including
a nitride semiconductor layer and including a first element
electrode, a second element electrode, and a third element
electrode; and a first mounting member, the first mounting member
including a first frame electrode, a plurality of first frame
connection members electrically connecting the first element
electrode and the first frame electrode, a first pad electrode, and
a first pad connection member electrically connecting the first
element electrode and the first pad electrode.
2. The device according to claim 1, wherein the first mounting
member further includes a mounting substrate, the mounting
substrate includes a first substrate surface facing the first
transistor, and the first frame electrode, the first pad electrode,
and the first transistor are located on the first substrate
surface.
3. The device according to claim 1, wherein the first mounting
member further includes a mounting substrate, the mounting
substrate includes a first substrate surface facing the first
transistor, a first direction is from the mounting substrate toward
the first frame electrode, and a position of the nitride
semiconductor layer in the first direction is between a position of
the first substrate surface in the first direction and a position
of the first element electrode in the first direction, between a
position of the first substrate surface in the first direction and
a position of the second element electrode in the first direction,
and between a position of the first substrate surface in the first
direction and a position of the third element electrode in the
first direction.
4. The device according to claim 1, wherein the first mounting
member further includes: a second frame electrode; a plurality of
second frame connection members electrically connecting the second
element electrode and the second frame electrode; a second pad
electrode; and a second pad connection member electrically
connecting the second element electrode and the second pad
electrode.
5. The device according to claim 4, wherein the first mounting
member further includes: a third pad electrode; and a third pad
connection member electrically connecting the third pad electrode
and the first frame electrode, and at least a portion of the first
frame electrode is between the first pad electrode and the third
pad electrode.
6. The semiconductor device according to claim 5, wherein the first
mounting member further includes: a fourth pad electrode; and a
fourth pad connection member electrically connecting the fourth pad
electrode and the second frame electrode, and at least a portion of
the second frame electrode is between the second pad electrode and
the fourth pad electrode.
7. The device according to claim 1, further comprising: a second
transistor including a fourth element electrode, a fifth element
electrode, and a sixth element electrode, the fifth element
electrode being electrically connected to the first frame
electrode, the first transistor being normally-on.
8. The semiconductor device according to claim 7, wherein the
second transistor includes a silicon semiconductor layer, and the
second transistor is normally-off.
9. The device according to claim 7, wherein the first mounting
member further includes: a fifth pad electrode; and a fifth pad
connection member electrically connecting the fifth pad electrode
and the fourth element electrode.
10. The device according to claim 7, further comprising: a first
diode including a first anode and a first cathode; and a second
diode including a second anode and a second cathode, the first
anode being electrically connected to the third element electrode,
the first cathode being electrically connected to the second anode,
the second cathode being electrically connected to the second
element electrode.
11. The device according to claim 1, wherein a number of the
plurality of first frame connection members is not less than 20 and
not more than 100.
12. The device according to claim 1, wherein the plurality of first
frame connection members includes at least one selected from the
group consisting of Au and Cu.
13. A semiconductor device, comprising: a first transistor
including a nitride semiconductor layer and including a first
element electrode, a second element electrode, and a third element
electrode; and a first mounting member, the first mounting member
including a plurality of first frame electrodes, a plurality of
first frame connection members electrically connecting the first
element electrode and one of the plurality of first frame
electrodes, and an other plurality of first frame connection
members electrically connecting the first element electrode and an
other one of the plurality of first frame electrodes.
14. The semiconductor device according to claim 13, wherein the one
of the plurality of first frame electrodes is next to the other one
of the plurality of first frame electrodes, and a distance between
the one of the plurality of first frame electrodes and the other
one of the plurality of first frame electrodes is not less than 10
.mu.m and not more than 80 .mu.m.
15. An inspection apparatus of a semiconductor device, comprising:
a first probe; a second probe; a third probe; a fourth probe; and a
controller electrically connected to the first, second, third, and
fourth probes, the controller being configured to inspect the
semiconductor device, the semiconductor device including a first
transistor including a nitride semiconductor layer and including a
first element electrode, a second element electrode, and a third
element electrode, and a first mounting member, the first mounting
member including a first frame electrode, a plurality of first
frame connection members electrically connecting the first element
electrode and the first frame electrode, a second frame electrode,
a second frame connection member electrically connecting the second
element electrode and the second frame electrode, a first pad
electrode, and a first pad connection member electrically
connecting the first element electrode and the first pad electrode,
in a first inspection state, the first probe being electrically
connected to a first portion of the first frame electrode, the
second probe being electrically connected to the second frame
electrode, the third probe being electrically connected to the
first pad electrode, the fourth probe being electrically connected
to a second portion of the first frame electrode, the controller
being configured to inspect at least a portion of the plurality of
first frame connection members by detecting a potential difference
between the third probe and the fourth probe when a current is
supplied between the first probe and the second probe in the first
inspection state.
16. The apparatus of the semiconductor device according to claim
15, wherein the semiconductor device further includes a second
transistor, the second transistor includes a fourth element
electrode, a fifth element electrode, and a sixth element
electrode, the fifth element electrode is electrically connected to
the first frame electrode, the first transistor is normally-on, the
first mounting member further includes a fifth pad electrode, a
fifth pad connection member electrically connecting the fifth pad
electrode and the fourth element electrode, a fifth frame
electrode, and a plurality of fifth frame connection members
electrically connecting the fifth frame electrode and the fourth
element electrode, in a third inspection state, the first probe is
electrically connected to a fifth portion of the fifth frame
electrode, the second probe is electrically connected to the first
pad electrode, the third probe is electrically connected to the
fifth pad electrode, and the fourth probe is electrically connected
to a sixth portion of the fifth frame electrode, and the controller
is configured to inspect at least a portion of the plurality of
fifth frame connection members by detecting a current flowing
between the first probe and the second probe when a current is
supplied between the first probe and the second probe in the third
inspection state.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application No. 2020-072779, filed on
Apr. 15, 2020; the entire contents of which are incorporated herein
by reference.
FIELD
[0002] Embodiments of the invention generally relate to a
semiconductor device, an inspection apparatus of a semiconductor
device, and a method for inspecting a semiconductor device.
BACKGROUND
[0003] It is desirable to improve the quality of a semiconductor
device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIGS. 1A to 1E are schematic views illustrating a
semiconductor device according to a first embodiment;
[0005] FIG. 2 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment;
[0006] FIG. 3 is an equivalent circuit illustrating the inspection
state of the semiconductor device according to the first
embodiment;
[0007] FIG. 4 is a schematic plan view illustrating a semiconductor
device and an inspection state according to a reference
example;
[0008] FIG. 5 is an equivalent circuit illustrating the inspection
state of the semiconductor device according to the reference
example;
[0009] FIGS. 6A to 6E are schematic views illustrating a
semiconductor device according to the first embodiment;
[0010] FIG. 7 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment;
[0011] FIGS. 8A to 8E are schematic plan views illustrating a
semiconductor device according to the first embodiment;
[0012] FIG. 9 is a schematic plan view illustrating a semiconductor
device according to the first embodiment;
[0013] FIGS. 10A and 10B are schematic cross-sectional views
illustrating the semiconductor device according to the first
embodiment;
[0014] FIG. 11 is an equivalent circuit diagram illustrating the
semiconductor device according to the first embodiment;
[0015] FIG. 12 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment;
[0016] FIG. 13 is a schematic plan view illustrating an inspection
state of a semiconductor device according to a second
embodiment;
[0017] FIGS. 14A and 14B are schematic plan views illustrating
inspection states of the semiconductor device according to the
second embodiment; and
[0018] FIG. 15 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the second
embodiment.
DETAILED DESCRIPTION
[0019] According to one embodiment, a semiconductor device includes
a first transistor, and a first mounting member. The first
transistor includes a nitride semiconductor layer and includes a
first element electrode, a second element electrode, and a third
element electrode. The first mounting member includes a first frame
electrode, a plurality of first frame connection members
electrically connecting the first element electrode and the first
frame electrode, a first pad electrode, and a first pad connection
member electrically connecting the first element electrode and the
first pad electrode.
[0020] According to one embodiment, a semiconductor device includes
a first transistor, and a first mounting member. The first
transistor includes a nitride semiconductor layer and includes a
first element electrode, a second element electrode, and a third
element electrode. The first mounting member includes a plurality
of first frame electrodes, a plurality of first frame connection
members electrically connecting the first element electrode and one
of the plurality of first frame electrodes, and an other plurality
of first frame connection members electrically connecting the first
element electrode and an other one of the plurality of first frame
electrodes.
[0021] According to one embodiment, an inspection apparatus of a
semiconductor device includes a first probe, a second probe, a
third probe, a fourth probe, and a controller electrically
connected to the first, second, third, and fourth probes. The
controller is configured to inspect the semiconductor device. The
semiconductor device includes a first transistor including a
nitride semiconductor layer and including a first element
electrode, a second element electrode, and a third element
electrode, and a first mounting member. The first mounting member
includes a first frame electrode, a plurality of first frame
connection members electrically connecting the first element
electrode and the first frame electrode, a second frame electrode,
a second frame connection member electrically connecting the second
element electrode and the second frame electrode, a first pad
electrode, and a first pad connection member electrically
connecting the first element electrode and the first pad electrode.
In a first inspection state, the first probe is electrically
connected to a first portion of the first frame electrode. The
second probe is electrically connected to the second frame
electrode. The third probe is electrically connected to the first
pad electrode. The fourth probe is electrically connected to a
second portion of the first frame electrode. The controller is
configured to inspect at least a portion of the plurality of first
frame connection members by detecting a potential difference
between the third probe and the fourth probe when a current is
supplied between the first probe and the second probe in the first
inspection state.
[0022] According to one embodiment, an inspection apparatus of a
semiconductor device includes a first probe, a second probe, and a
controller electrically connected to the first and second probes
and configured to inspect the semiconductor device. The
semiconductor device includes a first transistor including a
nitride semiconductor layer and including a first element
electrode, a second element electrode, and a third element
electrode, and a first mounting member. The first mounting member
includes a plurality of first frame electrodes, a plurality of
first frame connection members electrically connecting the first
element electrode and one of the plurality of first frame
electrodes, and an other plurality of first frame connection
members electrically connecting the first element electrode and an
other one of the plurality of first frame electrodes. In a first
inspection state, the first probe is electrically connected to the
one of the plurality of first frame electrodes, and the second
probe is electrically connected to the other one of the plurality
of first frame electrodes. The controller is configured to inspect
at least a portion of the plurality of first frame connection
members by detecting a current flowing between the first probe and
the second probe in the first inspection state.
[0023] According to one embodiment, a method for inspecting a
semiconductor device is disclosed. The semiconductor device
includes a first transistor including a nitride semiconductor layer
and including a first element electrode, a second element
electrode, and a third element electrode, and a first mounting
member. The first mounting member includes a first frame electrode,
a plurality of first frame connection members electrically
connecting the first element electrode and the first frame
electrode, a second frame electrode, a second frame connection
member electrically connecting the second element electrode and the
second frame electrode, a first pad electrode, and a first pad
connection member electrically connecting the first element
electrode and the first pad electrode. The method can include
inspecting at least a portion of the plurality of first frame
connection members by detecting a current flowing between a first
probe and a second probe in a first inspection state. The first
inspection state includes the first probe being electrically
connected to a first portion of the first frame electrode, the
second probe being electrically connected to the second frame
electrode, a third probe being electrically connected to the first
pad electrode, and a fourth probe being electrically connected to a
second portion of the first frame electrode.
[0024] According to one embodiment, a method for inspecting a
semiconductor device is disclosed. The semiconductor device
includes a first transistor including a nitride semiconductor layer
and including a first element electrode, a second element
electrode, and a third element electrode, and a first mounting
member. The first mounting member includes a plurality of first
frame electrodes, a plurality of first frame connection members
electrically connecting the first element electrode and one of the
plurality of first frame electrodes, and an other plurality of
first frame connection members electrically connecting the first
element electrode and an other one of the plurality of first frame
electrodes. The method can include inspecting at least a portion of
the plurality of first frame connection members by detecting a
current flowing between the first probe and the second probe in a
first inspection state. The first inspection state includes the
first probe being electrically connected to the one of the
plurality of first frame electrodes, and the second probe being
electrically connected to the other one of the plurality of first
frame electrodes.
[0025] Various embodiments are described below with reference to
the accompanying drawings.
[0026] The drawings are schematic and conceptual; and the
relationships between the thickness and width of portions, the
proportions of sizes among portions, etc., are not necessarily the
same as the actual values. The dimensions and proportions may be
illustrated differently among drawings, even for identical
portions.
[0027] In the specification and drawings, components similar to
those described previously in an antecedent drawing are marked with
like reference numerals, and a detailed description is omitted as
appropriate.
First Embodiment
[0028] FIGS. 1A to 1E are schematic views illustrating a
semiconductor device according to a first embodiment. FIG. 1A is a
plan view. FIG. 1B is a line A1-A2 cross-sectional view of FIG. 1A.
FIG. 1C is a line B1-B2 cross-sectional view of FIG. 1A. FIG. 1D is
a line C1-C2 cross-sectional view of FIG. 1A. FIG. 1E is a line
D1-D2 cross-sectional view of FIG. 1A.
[0029] As shown in FIG. 1A, the semiconductor device 110 according
to the embodiment includes a first transistor 10 and a first
mounting member 50.
[0030] The first transistor 10 includes a first element electrode
11, a second element electrode 12, and a third element electrode
13. As shown in FIGS. 1C and 1E, the first transistor 10 includes a
nitride semiconductor layer 10s. The nitride semiconductor layer
10s includes a nitride semiconductor. For example, the nitride
semiconductor layer 10s includes GaN.
[0031] As shown in FIG. 1A, the first mounting member 50 includes a
first frame electrode 51, multiple first frame connection members
51W, a first pad electrode 61, and a first pad connection member
61W. The multiple first frame connection members 51W electrically
connect the first element electrode 11 and the first frame
electrode 51. The first pad connection member 61W electrically
connects the first element electrode 11 and the first pad electrode
61. The multiple first frame connection members 51W and the first
pad connection member 61W are, for example, wires.
[0032] In the example as shown in FIGS. 1B to 1E, the first
mounting member 50 includes a mounting substrate 58. The mounting
substrate 58 includes a first substrate surface 58F. The first
substrate surface 58F faces the first transistor 10. The first
frame electrode 51, the first pad electrode 61, and the first
transistor 10 are located on the first substrate surface 58F. The
first substrate surface 58F faces the first frame electrode 51 and
the first pad electrode 61. The first substrate surface 58F is, for
example, the upper surface.
[0033] The direction from the mounting substrate 58 toward the
first frame electrode 51 shown in FIG. 1D is taken as a first
direction. The first direction is taken as a Z-axis direction. One
direction perpendicular to the Z-axis direction is taken as an
X-axis direction. A direction perpendicular to the Z-axis direction
and the X-axis direction is taken as a Y-axis direction. The first
substrate surface 58F is along the X-Y plane.
[0034] As shown in FIG. 1E, the position of the nitride
semiconductor layer 10s in the first direction (the Z-axis
direction) is between the position of the first substrate surface
58F in the first direction and the position of the first element
electrode 11 in the first direction. As shown in FIGS. 1C and 1E,
the position of the nitride semiconductor layer 10s in the first
direction (the Z-axis direction) is between the position of the
first substrate surface 58F in the first direction and the position
of the second element electrode 12 in the first direction. As shown
in FIG. 1C, the position of the nitride semiconductor layer 10s in
the first direction (the Z-axis direction) is between the position
of the first substrate surface 58F in the first direction and the
position of the third element electrode 13 in the first
direction.
[0035] For example, the first transistor 10 includes an element
member 18. The nitride semiconductor layer 10s is on at least a
portion of the element member 18. For example, the first element
electrode 11, the second element electrode 12, and the third
element electrode 13 are located on the element member 18.
[0036] In the example as shown in FIG. 1A, the first mounting
member 50 includes a second frame electrode 52 and a second frame
connection member 52W. Multiple second frame connection members 52W
are provided in the example. The multiple second frame connection
members 52W electrically connect the second element electrode 12
and the second frame electrode 52.
[0037] In the example as shown in FIG. 1A, the first mounting
member 50 includes a third frame electrode 53 and a third frame
connection member 53W. The third frame connection member 53W
electrically connects the third element electrode 13 and the third
frame electrode 53.
[0038] The first element electrode 11 is, for example, a drain
electrode of the first transistor 10. The second element electrode
12 is, for example, a source electrode of the first transistor 10.
The third element electrode 13 is, for example, a gate electrode of
the first transistor 10.
[0039] In the example as shown in FIG. 1A, the direction from the
third element electrode 13 toward the second element electrode 12
is along the X-axis direction. The direction from the first element
electrode 11 toward the second element electrode 12 is along the
Y-axis direction.
[0040] By providing the first pad electrode 61 in the semiconductor
device 110 as described below, the state of the multiple first
frame connection members 51W can be inspected with high accuracy. A
semiconductor device can be provided thereby in which the quality
can be improved.
[0041] FIG. 2 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment.
[0042] As shown in FIG. 2, an inspection apparatus 210 of the
semiconductor device includes a first probe 71, a second probe 72,
a third probe 73, a fourth probe 74, and a controller 70. The
controller 70 is electrically connected to the first, second,
third, and fourth probes 71, 72, 73, and 74. The controller 70 is
configured to inspect the semiconductor device 110.
[0043] As shown in FIG. 2, the controller 70 inspects the
semiconductor device 110 in a first inspection state ST1. In the
first inspection state ST1, the first probe 71 is electrically
connected to a first portion 51a of the first frame electrode 51,
the second probe 72 is electrically connected to the second frame
electrode 52, the third probe 73 is electrically connected to the
first pad electrode 61, and the fourth probe 74 is electrically
connected to a second portion 51b of the first frame electrode 51.
For example, these electrical connections may be performed by
contact between the probe and the electrode. As described below,
another pad that is electrically connected to one electrode may be
provided, and one probe may be electrically connected to the one
electrode by electrically connecting the one probe to the other
pad. For example, the first portion 51a of the first frame
electrode 51 is between the first pad electrode 61 and the second
portion 51b of the first frame electrode 51.
[0044] The controller 70 is configured to inspect at least a
portion of the multiple first frame connection members 51W in such
a first inspection state ST1 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72.
FIG. 3 is an equivalent circuit illustrating the inspection state
of the semiconductor device according to the first embodiment.
[0045] As shown in FIG. 3, a current is supplied between the first
probe 71 and the second probe 72 in the first inspection state ST1.
The resistance of one of the multiple first frame connection
members 51W is taken as a resistance R1. The number of the multiple
first frame connection members 51W is taken as a number N1. In such
a case, a resistance Rx that is measured by a potential difference
V1 generated between the third probe 73 and the fourth probe 74 is
R1/N1. A defect of the multiple first frame connection members 51W
can be detected when the measured resistance Rx is outside a
determined value range.
[0046] In such a measurement, the measured resistance Rx is
dependent on the multiple first frame connection members 51W
regardless of other resistances (e.g., the resistance inside the
first transistor 10, etc.). Accordingly, the state of the multiple
first frame connection members 51W to be detected can be detected
with high accuracy.
[0047] FIG. 4 is a schematic plan view illustrating a semiconductor
device and an inspection state according to a reference
example.
[0048] As shown in FIG. 4, the first pad electrode 61 and the first
pad connection member 61W are not provided in the semiconductor
device 119 of the reference example. In the inspection of the
semiconductor device 119, the first probe 71 is electrically
connected to the first frame electrode 51, and the second probe 72
is electrically connected to the second frame electrode 52. For
example, a current is supplied between the first probe 71 and the
second probe 72, and a potential difference between the first probe
71 and the second probe 72 is detected. The inspection is performed
based on the detected potential difference.
[0049] FIG. 5 is an equivalent circuit illustrating the inspection
state of the semiconductor device according to the reference
example.
[0050] In the semiconductor device 119, the resistance of one of
the multiple first frame connection members 51W is taken as the
resistance R1, and the number of the multiple first frame
connection members 51W is taken as the number N1. The resistance of
one of the multiple second frame connection members 52W is taken as
a resistance R2, and the number of the multiple second frame
connection members 52W is taken as a number N2. The resistance
inside the first transistor 10 is taken as a resistance R3. For
example, the resistance R3 is based on the resistance of the
nitride semiconductor layer 10s, etc. In such a reference example,
the resistance Rx that is measured using the potential difference
generated between the first probe 71 and the second probe 72 is
R1/N1+R2/N2+R3. In the reference example, the resistance Rx is
dependent not only on the resistance of the multiple first frame
connection members 51W to be detected but also on other resistances
(e.g., the resistance R2, the resistance R3, etc.). Accordingly, in
the reference example, it is difficult to detect, with high
accuracy, the state of the multiple first frame connection members
51W to be detected.
[0051] Conversely, in the embodiment, the measured resistance Rx is
dependent on the multiple first frame connection members 51W
regardless of other resistances (e.g., the resistance R2, the
resistance R3, etc.). In the embodiment, the state of the multiple
first frame connection members 51W to be detected can be detected
with high accuracy.
[0052] For example, the resistance R1 of one of the multiple first
frame connection members 51W is taken to be 32 m.OMEGA.. The number
N1 of the multiple first frame connection members 51W is taken to
be 40. The resistance R2 of one of the multiple second frame
connection members 52W is taken to be 64 m.OMEGA.. The number N2 of
the multiple second frame connection members 52W is taken to be 40.
The resistance R3 is taken to be 44 m.OMEGA.. In such a case, the
occurrence of a connection defect in one first frame connection
member 51W is as follows.
[0053] In the semiconductor device 119 of the reference example,
the resistance Rx that is detected when there are no defects is 32
m.OMEGA./40+64 m.OMEGA./40+44 m.OMEGA., i.e., 46.4 m.OMEGA.. The
resistance Rx that is detected when a connection defect has
occurred in one first frame connection member 51W is 32
m.OMEGA./39+64 m.OMEGA./40+44 m.OMEGA., i.e., 46.4205 m.OMEGA.. The
difference between these resistances is 0.04% of the resistance Rx
detected when there are no defects.
[0054] On the other hand, in the semiconductor device 110 according
to the embodiment, the resistance Rx that is detected when there
are no defects is 32 m.OMEGA./40, i.e., 0.8 m.OMEGA.. The
resistance Rx that is detected when a connection defect has
occurred in one first frame connection member 51W is 32
m.OMEGA./39, i.e., 0.821 m.OMEGA.. The difference between these
resistances is 2.6% of the resistance Rx detected when there are no
defects.
[0055] Thus, in the embodiment, one defect greatly affects the
resistance Rx. According to the embodiment, the state of the
multiple first frame connection members 51W to be detected can be
detected with high accuracy. The quality is more easily improved
because the inspection has high accuracy. High productivity is
easily obtained. According to the embodiment, a semiconductor
device can be provided in which the quality can be improved.
[0056] For example, in a transistor that includes a nitride
semiconductor such as GaN, etc., the resistance inside the
transistor is exceedingly low. Therefore, it is desirable to reduce
the resistance of the connection members such as the wires, etc.,
of such a transistor. Therefore, for example, the electrical
connection is performed using multiple connection members (wires,
etc.). When multiple connection members are used, for example, the
desired characteristics are not obtained when a connection defect
occurs in one of the multiple connection members. For example, when
a connection defect occurs in one of the multiple connection
members, a nonuniform distribution occurs in the current flowing
through the element electrodes, and the reliability of the element
degrades. Degradation over time of the element over long-term use
is easily caused. For a transistor that includes a nitride
semiconductor, it is desirable to detect, with high accuracy, the
connection state of the multiple connection members to be detected.
In the embodiment, the connection state of the multiple connection
members (e.g., the multiple first frame connection members 51W) can
be inspected with high accuracy. A semiconductor device can be
provided in which the quality can be improved thereby.
[0057] In the embodiment, the controller 70 may include a fifth
probe 75 (referring to FIG. 2). The fifth probe 75 is electrically
connected to the third frame electrode 53. For example, the
electrical connection may be performed by contact between the probe
and the electrode. For example, the controller 70 may perform the
inspection of the multiple first frame connection members 51W in a
state in which a voltage is applied to the third frame electrode
53.
[0058] FIGS. 6A to 6E are schematic views illustrating a
semiconductor device according to the first embodiment. FIG. 6A is
a plan view. FIG. 6B is a line A1-A2 cross-sectional view of FIG.
6A. FIG. 6C is a line B1-B2 cross-sectional view of FIG. 6A. FIG.
6D is a line C1-C2 cross-sectional view of FIG. 6A. FIG. 6E is a
line D1-D2 cross-sectional view of FIG. 6A.
[0059] As shown in FIG. 6A, the semiconductor device 111 according
to the embodiment also includes the first transistor 10 and the
first mounting member 50. In the semiconductor device 111, the
first mounting member 50 includes a second pad electrode 62 and a
second pad connection member 62W. Otherwise, the configuration of
the semiconductor device 111 is similar to that of the
semiconductor device 110.
[0060] The second pad connection member 62W electrically connects
the second element electrode 12 and the second pad electrode 62. As
shown in FIG. 6B, the second pad electrode 62 is located on the
first substrate surface 58F of the mounting substrate 58. The
second pad connection member 62W is, for example, a wire.
[0061] FIG. 7 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment.
[0062] As shown in FIG. 7, the inspection apparatus 210 of the
semiconductor device includes the first probe 71, the second probe
72, the third probe 73, the fourth probe 74, and the controller
70.
[0063] As shown in FIG. 7, the controller 70 inspects the
semiconductor device 111 in a second inspection state ST2. In the
second inspection state ST2, the first probe 71 is electrically
connected to the first frame electrode 51, the second probe 72 is
electrically connected to a third portion 52c of the second frame
electrode 52, the third probe 73 is electrically connected to the
second pad electrode 62, and the fourth probe 74 is electrically
connected to a fourth portion 52d of the second frame electrode 52.
For example, these electrical connections may be performed by
contact between the probe and the electrode. For example, the third
portion 52c of the second frame electrode 52 is between the second
pad electrode 62 and the fourth portion 52d of the second frame
electrode 52.
[0064] The controller 70 is configured to inspect at least a
portion of the multiple second frame connection members 52W in such
a second inspection state ST2 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72.
[0065] In the semiconductor device 111, the state of the multiple
second frame connection members 52W to be detected can be detected
with high accuracy. A semiconductor device can be provided in which
the quality can be improved.
[0066] In the embodiment, the controller 70 may include the fifth
probe 75 (referring to FIG. 2). The fifth probe 75 is electrically
connected to the third frame electrode 53. The controller 70 may
perform the inspection of the multiple second frame connection
members 52W in a state in which a voltage is applied to the third
frame electrode 53.
[0067] FIGS. 8A to 8E are schematic plan views illustrating a
semiconductor device according to the first embodiment.
[0068] As shown in FIGS. 8A to 8E, the semiconductor device 112
according to the embodiment also includes the first transistor 10
and the first mounting member 50. In the semiconductor device 112,
the first mounting member 50 includes a third pad electrode 63 and
a third pad connection member 63W. In the example, the first
mounting member 50 further includes a fourth pad electrode 64 and a
fourth pad connection member 64W. Otherwise, the configuration of
the semiconductor device 112 is similar to that of the
semiconductor device 111.
[0069] The third pad connection member 63W electrically connects
the third pad electrode 63 and the first frame electrode 51. The
fourth pad connection member 64W electrically connects the fourth
pad electrode 64 and the second frame electrode 52. For example, at
least a portion of the first frame electrode 51 is between the
first pad electrode 61 and the third pad electrode 63. For example,
at least a portion of the second frame electrode 52 is between the
second pad electrode 62 and the fourth pad electrode 64. The third
pad connection member 63W and the fourth pad connection member 64W
are, for example, wires
[0070] In the semiconductor device 112, for example, in the first
inspection state ST1, the first probe 71 is electrically connected
to the first frame electrode 51, the second probe 72 is
electrically connected to the second frame electrode 52, the third
probe 73 is electrically connected to the first pad electrode 61,
and the fourth probe 74 is electrically connected to the third pad
electrode 63. The controller 70 is configured to inspect at least a
portion of the multiple first frame connection members 51W in such
a first inspection state ST1 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72.
[0071] In the semiconductor device 112, for example, in the second
inspection state ST2, the first probe 71 is electrically connected
to the first frame electrode 51, the second probe 72 is
electrically connected to the second frame electrode 52, the third
probe 73 is electrically connected to the second pad electrode 62,
and the fourth probe 74 is electrically connected to the fourth pad
electrode 64. The controller 70 is configured to inspect at least a
portion of the multiple second frame connection members 52W in such
a second inspection state ST2 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72.
[0072] In the semiconductor device 112 as well, the state to be
detected can be detected with high accuracy. A semiconductor device
can be provided in which the quality can be improved.
[0073] FIG. 9 is a schematic plan view illustrating a semiconductor
device according to the first embodiment.
[0074] FIGS. 10A and 10B are schematic cross-sectional views
illustrating the semiconductor device according to the first
embodiment.
[0075] FIG. 11 is an equivalent circuit diagram illustrating the
semiconductor device according to the first embodiment.
[0076] FIG. 10A is a line E1-E2 cross-sectional view of FIG. 9.
FIG. 10B is a line F1-F2 cross-sectional view of FIG. 9.
[0077] As shown in FIG. 9, the semiconductor device 113 according
to the embodiment includes a second transistor 20 in addition to
the first transistor 10 and the first mounting member 50. In the
example, the semiconductor device 113 further includes a first
diode 31 and a second diode 32. The configuration of the first
transistor 10 of the semiconductor device 113 may be similar to the
configuration of the first transistor 10 of the semiconductor
device 110.
[0078] As shown in FIGS. 9 and 10A, the second transistor 20
includes a fourth element electrode 24, a fifth element electrode
25, and a sixth element electrode 26. As shown in FIGS. 10A and 11,
the fifth element electrode 25 is electrically connected to the
second frame electrode 52. Thereby, the fifth element electrode 25
is electrically connected to the second element electrode 12.
[0079] As shown in FIG. 10A, the second transistor 20 includes a
silicon semiconductor layer 20s. The second transistor 20 is, for
example, a normally-off low breakdown voltage transistor. On the
other hand, the first transistor 10 is a normally-on high breakdown
voltage transistor. The first transistor 10 and the second
transistor 20 have a cascode connection. Thereby, the semiconductor
device 113 can have a normally-off operation.
[0080] In the second transistor 20, the fourth element electrode 24
is, for example, a source electrode. The fifth element electrode 25
is, for example, a drain electrode. The sixth element electrode 26
is, for example, a gate electrode. As shown in FIG. 9, the first
mounting member 50 includes a fourth frame electrode 54 and a
fourth frame connection member 54W. The fourth frame connection
member 54W electrically connects the fourth frame electrode 54 and
the sixth element electrode 26.
[0081] As shown in FIG. 9, the first mounting member 50 includes a
fifth pad electrode 65 and a fifth pad connection member 65W. The
fifth pad connection member 65W electrically connects the fifth pad
electrode 65 and the fourth element electrode 24.
[0082] As shown in FIG. 9, the first mounting member 50 includes a
fifth frame electrode 55 and a fifth frame connection member 55W.
In the example, multiple fifth frame connection members 55W are
provided. The multiple fifth frame connection members 55W
electrically connect the fifth frame electrode 55 and the fourth
element electrode 24.
[0083] As shown in FIG. 9, the first mounting member 50 includes a
sixth frame electrode 56 and a sixth frame connection member 56W.
The sixth frame connection member 56W electrically connects the
fifth frame electrode 55 and the sixth frame electrode 56.
[0084] As shown in FIG. 11, the first diode 31 includes a first
anode 31A and a first cathode 31C. As shown in FIGS. 10B and 11,
the second diode 32 includes a second anode 32A and a second
cathode 32C. As shown in FIGS. 9 and 11, the first anode 31A is
electrically connected to the third element electrode 13. In the
example as shown in FIG. 9, the first anode 31A and the third frame
electrode 53 are electrically connected by a connection member
53Wa. The first anode 31A is electrically connected to the third
element electrode 13 by the connection member 53Wa and the third
frame connection member 53W.
[0085] As shown in FIG. 11, the first cathode 31C is electrically
connected to the second anode 32A. In the example as shown in
[0086] FIGS. 9 and 10B, the second anode 32A and the fifth frame
electrode 55 are electrically connected by a connection member
55Wa. As shown in FIG. 11, the second cathode 32C is electrically
connected to the second element electrode 12. In the example as
shown in FIG. 10B, the second cathode 32C is electrically connected
to the second frame electrode 52. The second cathode 32C is
electrically connected to the second element electrode 12 via the
second frame electrode 52 and the second frame connection member
52W.
[0087] The first diode 31 is, for example, a p-i-n diode. The
second diode 32 is, for example, a zener diode (a voltage regulator
diode).
[0088] In the example as shown in FIG. 9, the fourth pad electrode
64 is electrically connected to the second frame electrode 52 via
the fourth pad connection member 64W, the second element electrode
12, and the multiple second frame connection members 52W.
[0089] As shown in FIG. 9, the first frame electrode 51 is used as
a first terminal T1 (referring to FIG. 11). As shown in FIG. 9, the
fifth frame electrode 55 is used as a second terminal T2 (referring
to FIG. 11). As shown in FIG. 9, the third frame electrode 53 is
used as a third terminal T3 (referring to FIG. 11). As shown in
FIG. 9, the fourth frame electrode 54 is used as a fourth terminal
T4 (referring to FIG. 11). For example, the first terminal T1
functions as a drain terminal of the semiconductor device 113. For
example, the second terminal T2 functions as a source terminal of
the semiconductor device 113. For example, the fourth terminal T4
functions as a gate terminal of the semiconductor device 113.
[0090] In the semiconductor device 113 as well, the multiple first
frame connection members 51W can be inspected with high accuracy by
providing at least one of the first pad electrode 61 or the third
pad electrode 63. The multiple second frame connection members 52W
can be inspected with high accuracy by providing at least one of
the second pad electrode 62 or the fourth pad electrode 64.
[0091] In the semiconductor device 113, for example, the multiple
fifth frame connection members 55W can be inspected with high
accuracy by providing the fifth pad electrode 65.
[0092] FIG. 12 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the first
embodiment. As shown in FIG. 12, the inspection apparatus 210 of
the semiconductor device includes the first probe 71, the second
probe 72, the third probe 73, the fourth probe 74, and the
controller 70. The controller 70 is electrically connected to the
first, second, third, and fourth probes 71, 72, 73, and 74. The
controller 70 is configured to inspect the semiconductor device
113. In addition to the inspections in the first inspection state
ST1 and the second inspection state ST2 described above, the
controller 70 is configured to inspect the semiconductor device 113
in a third inspection state ST3.
[0093] As described above, the first mounting member 50 includes
the fifth pad electrode 65, the fifth pad connection member 65W,
the fifth frame electrode 55, and the multiple fifth frame
connection members 55W. The fifth pad connection member 65W
electrically connects the fifth pad electrode 65 and the fourth
element electrode 24. The multiple fifth frame connection members
55W electrically connect the fifth frame electrode 55 and the
fourth element electrode 24.
[0094] In the third inspection state ST3, the first probe 71 is
electrically connected to a fifth portion 55e of the fifth frame
electrode 55, the second probe 72 is electrically connected to the
second pad electrode 62, the third probe 73 is electrically
connected to the fifth pad electrode 65, and the fourth probe 74 is
electrically connected to a sixth portion 55f of the fifth frame
electrode 55. For example, the fifth portion 55e of the fifth frame
electrode 55 is between the fifth pad electrode 65 and the sixth
portion 55f of the fifth frame electrode 55.
[0095] The controller 70 is configured to inspect at least a
portion of the multiple fifth frame connection members 55W in such
a third inspection state ST3 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72. The
state of the multiple fifth frame connection members 55W to be
detected can be detected with high accuracy. The quality is more
easily improved because the inspection has high accuracy. High
productivity is easily obtained. According to the embodiment, a
semiconductor device can be provided in which the quality can be
improved.
[0096] In the first embodiment, the number of the multiple first
frame connection members 51W is, for example, not less than 20 and
not more than 100. The number of the multiple first frame
connection members 51W may be, for example, not less than 30 and
not more than 60. The multiple first frame connection members 51W
includes, for example, at least one selected from the group
consisting of Au and Cu. The number of the multiple second frame
connection members 52W is, for example, not less than 20 and not
more than 100. The number of the multiple second frame connection
members 52W may be, for example, not less than 30 and not more than
60. The multiple second frame connection members 52W includes, for
example, at least one selected from the group consisting of Au and
Cu.
[0097] For example, the number of the multiple fifth frame
connection members 55W is, for example, not less than 5 and not
more than 30. The number of the multiple fifth frame connection
members 55W may be, for example, not less than 5 and not more than
15. The multiple fifth frame connection members 55W includes, for
example, at least one selected from the group consisting of Au and
Cu.
Second Embodiment
[0098] FIG. 13 is a schematic plan view illustrating an inspection
state of a semiconductor device according to a second embodiment.
As shown in FIG. 13, the semiconductor device 120 according to the
second embodiment includes the first transistor 10 and the first
mounting member 50. The configuration of the first transistor 10 of
the semiconductor device 120 may be similar to the configuration of
the first transistor 10 of the semiconductor device 110. For
example, the first transistor 10 includes the nitride semiconductor
layer 10s and includes the first element electrode 11, the second
element electrode 12, and the third element electrode 13 (referring
to FIG. 1E). An example of the first mounting member 50 of the
semiconductor device 120 will now be described.
[0099] As shown in FIG. 13, the first mounting member 50 includes
the multiple first frame electrodes 51, the multiple first frame
connection members 51W, and other multiple first frame connection
members 51WA. The multiple first frame connection members 51W
electrically connect the first element electrode 11 and one of the
multiple first frame electrodes 51. The other multiple first frame
connection members 51WA electrically connect the first element
electrode 11 and another one of the multiple first frame electrodes
51.
[0100] The first mounting member 50 may include other multiple
first frame connection members 51WB, other multiple first frame
connection members 51WC, etc. The other multiple first frame
connection members 51WB electrically connect the first element
electrode 11 and another one of the multiple first frame electrodes
51. The other multiple first frame connection members 51WC
electrically connect the first element electrode 11 and another one
of the multiple first frame electrodes 51.
[0101] For example, the one of the multiple first frame electrodes
51 described above is next to the other one of the multiple first
frame electrodes 51 described above.
[0102] In the semiconductor device 120, for example, the state of
the multiple first frame connection members 51W, etc., can be
inspected by detecting a current flowing between one of the
multiple first frame electrodes 51 and another one of the multiple
first frame electrodes 51.
[0103] FIGS. 14A and 14B are schematic plan views illustrating
inspection states of the semiconductor device according to the
second embodiment.
[0104] As shown in FIG. 14A, an inspection apparatus 220 includes
the first probe 71, the second probe 72, and the controller 70. The
controller 70 is electrically connected to the first and second
probes 71 and 72. The controller 70 is configured to inspect the
semiconductor device 120.
[0105] As described above, the semiconductor device 120 includes
the first transistor 10 and the first mounting member 50. The first
mounting member 50 includes the multiple first frame electrodes 51,
the multiple first frame connection members 51W, and the other
multiple first frame connection members 51WA.
[0106] In the first inspection state ST1 as shown in FIG. 14A, the
first probe 71 is electrically connected to the one of the multiple
first frame electrodes 51 described above, and the second probe 72
is electrically connected to the other one of the multiple first
frame electrodes 51 described above. The multiple first frame
connection members 51W are connected to the one of the multiple
first frame electrodes 51 described above. The other multiple first
frame connection members 51WA are connected to the other one of the
multiple first frame electrodes 51 described above. The controller
70 is configured to inspect at least a portion of the multiple
first frame connection members 51W (and the other multiple first
frame connection members 51WA) in the first inspection state ST1 by
detecting a current flowing between the first probe 71 and the
second probe 72.
[0107] In such a semiconductor device 120 and such an inspection
apparatus 220, the state of the multiple first frame connection
members (the multiple first frame connection members 51W, the
multiple first frame connection members 51WA, etc.) of interest can
be inspected without being affected by the other connection
members, etc. A semiconductor device and an inspection apparatus of
a semiconductor device can be provided in which the quality can be
improved.
[0108] In the second inspection state ST2 as shown in FIG. 14B, the
first probe 71 is electrically connected to the one of the multiple
first frame electrodes 51 described above, and the second probe 72
is electrically connected to the other one of the multiple first
frame electrodes 51 described above. The multiple first frame
connection members 51WA are connected to the one of the multiple
first frame electrodes 51 described above. The multiple first frame
connection members 51WB are connected to the other one of the
multiple first frame electrodes 51 described above. The controller
70 is configured to inspect at least a portion of the multiple
first frame connection members 51WA (and the other multiple first
frame connection members 51WB) in the first inspection state ST1 by
detecting a current flowing between the first probe 71 and the
second probe 72.
[0109] Such a configuration relating to the multiple first frame
electrodes 51 and the multiple first frame connection members 51W
is applicable to the multiple second frame electrodes 52 and the
multiple second frame connection members 52W. For example, the
multiple second frame connection members 52W, multiple second frame
connection members 52WA, multiple second frame connection members
52WB, multiple second frame connection members 52WC, etc., may be
provided.
[0110] In the semiconductor device 120 such as that described
above, one first frame electrode 51 can be considered to be divided
into multiple regions (the multiple first frame electrodes 51). The
distance between the multiple first frame electrodes 51 may be
short.
[0111] FIG. 15 is a schematic plan view illustrating an inspection
state of the semiconductor device according to the second
embodiment. As shown in FIG. 15, one of the multiple first frame
electrodes 51 is next to another one of the multiple first frame
electrodes 51. In such a case, it is favorable for a distance w51
between the one of the multiple first frame electrodes 51 described
above and the other one of the multiple first frame electrodes 51
described above to be not less than 10 .mu.m and not more than 80
.mu.m.
[0112] As shown in FIG. 15, one of the multiple second frame
electrodes 52 is next to another one of the multiple second frame
electrodes 52. In such a case, it is favorable for a distance w52
between the one of the multiple second frame electrodes 52
described above and the other one of the multiple second frame
electrodes 52 described above to be not less than 10 .mu.m and not
more than 80 .mu.m.
Third Embodiment
[0113] A third embodiment relates to the inspection apparatus 210
of the semiconductor device. As described above, the inspection
apparatus 210 includes the first to fourth probes 71 to 74 and the
controller 70 (referring to FIG. 2). The controller 70 is
configured to inspect the semiconductor device 110. In the
semiconductor device 110 as shown in FIG. 2, the first mounting
member 50 includes the first frame electrode 51, the multiple first
frame connection members 51W, the second frame electrode 52, the
second frame connection member 52W, the first pad electrode 61, and
the first pad connection member 61W.
[0114] In the first inspection state ST1 illustrated in FIG. 2, the
first probe 71 is electrically connected to the first portion 51a
of the first frame electrode 51, the second probe 72 is
electrically connected to the second frame electrode 52, the third
probe 73 is electrically connected to the first pad electrode 61,
and the fourth probe 74 is electrically connected to the second
portion 51b of the first frame electrode 51. As shown in FIG. 2,
the controller 70 is configured to inspect at least a portion of
the multiple first frame connection members 51W in such a first
inspection state ST1 by detecting a potential difference between
the third probe 73 and the fourth probe 74 when a current is
supplied between the first probe 71 and the second probe 72.
Fourth Embodiment
[0115] A fourth embodiment relates to the inspection apparatus 220
of the semiconductor device.
[0116] As described above, the inspection apparatus 210 includes
the first probe 71, the second probe 72, and the controller 70
(referring to FIG. 14A). The controller 70 is configured to inspect
the semiconductor device 120. In the semiconductor device 120, the
first mounting member 50 includes the multiple first frame
electrodes 51, the multiple first frame connection members 51W, and
the other multiple first frame connection members 51WA. The
multiple first frame connection members 51W electrically connect
the first element electrode 11 and one of the multiple first frame
electrodes 51. The other multiple first frame connection members
51WA electrically connect the first element electrode 11 and
another one of the multiple first frame electrodes 51.
[0117] In the first inspection state ST1 illustrated in FIG. 14A,
the first probe 71 is electrically connected to the one of the
multiple first frame electrodes 51 described above, and the second
probe 72 is electrically connected to the other one of the multiple
first frame electrodes 51 described above. As shown in FIG. 14A,
the controller 70 is configured to inspect at least a portion of
the multiple first frame connection members 51W (and the multiple
first frame connection members 51WA) in such a first inspection
state ST1 by detecting a current flowing between the first probe 71
and the second probe 72.
Fifth Embodiment
[0118] A fifth embodiment relates to a method for inspecting the
semiconductor device. For example, the method for inspecting the
semiconductor device according to the fifth embodiment is based on
the inspection apparatus 210 illustrated in FIG. 2. For example,
the first inspection state ST1 illustrated in FIG. 2 is employed in
the inspection method. In the first inspection state ST1, the first
probe 71 is electrically connected to the first portion 51a of the
first frame electrode 51, the second probe 72 is electrically
connected to the second frame electrode 52, the third probe 73 is
electrically connected to the first pad electrode 61, and the
fourth probe 74 is electrically connected to the second portion 51b
of the first frame electrode 51. In the first inspection state ST1,
at least a portion of the multiple first frame connection members
51W is inspected by detecting a current flowing between the first
probe 71 and the second probe 72. The multiple first frame
connection members 51W can be inspected with high accuracy.
[0119] The inspection method according to the fifth embodiment may
include, for example, the inspection described with reference to
FIG. 12. For example, in the third inspection state ST3 illustrated
in FIG. 12, the first probe 71 is electrically connected to the
fifth portion 55e of the fifth frame electrode 55, the second probe
72 is electrically connected to the first pad electrode 61, the
third probe 73 is electrically connected to the fifth pad electrode
65, and the fourth probe 74 is electrically connected to the sixth
portion 55f of the fifth frame electrode 55. At least a portion of
the multiple fifth frame connection members 55W is inspected in the
third inspection state ST3 by detecting a potential difference
between the third probe 73 and the fourth probe 74 when a current
is supplied between the first probe 71 and the second probe 72. The
multiple fifth frame connection members 55W can be inspected with
high accuracy.
Sixth Embodiment
[0120] A sixth embodiment relates to a method for inspecting a
semiconductor device. For example, the method for inspecting the
semiconductor device according to the sixth embodiment is based on
the inspection apparatus 220 illustrated in FIG. 14A. As described
with reference to FIG. 14A, at least a portion of the multiple
first frame connection members 51W (and the other multiple first
frame connection members 51WA, etc.) is inspected by detecting a
current flowing between the first probe 71 and the second probe 72
in the first inspection state ST1 in which the first probe 71 is
electrically connected to one of the multiple first frame
electrodes 51 and the second probe 72 is electrically connected to
another one of the multiple first frame electrodes 51. The multiple
first frame connection members 51W (and the other multiple first
frame connection members 51WA, etc.) can be inspected with high
accuracy.
[0121] In the embodiments, the first transistor 10 may be
normally-on or normally-off. The first transistor 10 may have a
JFET structure or a MOS structure.
[0122] In the embodiments, the element member 18 may include, for
example, Si. The element member 18 may include, for example, at
least one selected from the group consisting of a Si substrate, a
SiC substrate, a sapphire substrate, and a GaN substrate. A
conductive layer (e.g., an electrode) may be provided at the back
surface (the lower surface) of the element member 18. For example,
the conductive layer may be set to a ground potential, etc.
[0123] In the embodiments, the state of multiple connection members
can be inspected with high accuracy. By performing such an
inspection, for example, a semiconductor device can be provided in
which the output characteristics are stable. For example, a
semiconductor device can be provided in which the nonuniformity of
the current density of the semiconductor device is small and the
characteristics are stable. For example, the degradation of the
element over long-term use does not occur easily, and a highly
reliable semiconductor device can be provided.
[0124] According to the embodiments, a semiconductor device, an
inspection apparatus of a semiconductor device, and a method for
inspecting a semiconductor device can be provided in which the
quality can be improved.
[0125] In the specification, "nitride semiconductor" includes all
compositions of semiconductors of the chemical formula
B.sub.xIn.sub.yAl.sub.zGa.sub.1-x-y-zN (0.ltoreq.x.ltoreq.1,
0.ltoreq.y.ltoreq.1, 0z.ltoreq.1, and x+y+z.ltoreq.1) for which the
composition ratios x, y, and z are changed within the ranges
respectively. "Nitride semiconductor" further includes group V
elements other than N (nitrogen) in the chemical formula recited
above, various elements added to control various properties such as
the conductivity type and the like, and various elements included
unintentionally.
[0126] Hereinabove, exemplary embodiments of the invention are
described with reference to specific examples. However, the
embodiments of the invention are not limited to these specific
examples. For example, one skilled in the art may similarly
practice the invention by appropriately selecting specific
configurations of components included in semiconductor devices such
as transistors, mounting members, element electrodes, frame
electrodes, pad electrodes, connection members, and includes in
inspection apparatuses such as probes, controllers, etc., from
known art. Such practice is included in the scope of the invention
to the extent that similar effects thereto are obtained.
[0127] Further, any two or more components of the specific examples
may be combined within the extent of technical feasibility and are
included in the scope of the invention to the extent that the
purport of the invention is included.
[0128] Moreover, all semiconductor devices, inspection apparatuses
of semiconductor devices, and methods for inspecting semiconductor
devices practicable by an appropriate design modification by one
skilled in the art based on the semiconductor devices, the
inspection apparatuses of semiconductor devices, and the methods
for inspecting semiconductor memory devices described above as
embodiments of the invention also are within the scope of the
invention to the extent that the purport of the invention is
included.
[0129] Various other variations and modifications can be conceived
by those skilled in the art within the spirit of the invention, and
it is understood that such variations and modifications are also
encompassed within the scope of the invention.
[0130] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modifications as would fall within the scope and spirit of the
invention.
* * * * *