U.S. patent application number 17/258747 was filed with the patent office on 2021-09-02 for method for manufacturing semiconductor device, heat-curable resin composition, and dicing-die attach film.
The applicant listed for this patent is Showa Denko Materials Co., Ltd.. Invention is credited to Shunsuke FUJIO, Yui KUNITO, Kazuhiro YAMAMOTO.
Application Number | 20210269679 17/258747 |
Document ID | / |
Family ID | 1000005638629 |
Filed Date | 2021-09-02 |
United States Patent
Application |
20210269679 |
Kind Code |
A1 |
YAMAMOTO; Kazuhiro ; et
al. |
September 2, 2021 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, HEAT-CURABLE RESIN
COMPOSITION, AND DICING-DIE ATTACH FILM
Abstract
A method for manufacturing a semiconductor device according to
an aspect of the present disclosure includes a step of preparing a
dicing/die-bonding integrated film including an adhesive layer
formed of a heat-curable resin composition having a melt viscosity
of 3100 Pas or higher at 120.degree. C., a tacky adhesive layer,
and a base material film; a step of sticking a surface on the
adhesive layer side of the dicing/die-bonding integrated film and a
semiconductor wafer together; a step of dicing the semiconductor
wafer; a step of expanding the base material film and thereby
obtaining adhesive-attached semiconductor elements; a step of
picking up the adhesive-attached semiconductor element from the
tacky adhesive layer; a step of laminating this semiconductor
element to another semiconductor element, with the adhesive
interposed therebetween; and a step of heat-curing the
adhesive.
Inventors: |
YAMAMOTO; Kazuhiro;
(Chiyoda-ku, Tokyo, JP) ; KUNITO; Yui;
(Chiyoda-ku, Tokyo, JP) ; FUJIO; Shunsuke;
(Chiyoda-ku, Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Showa Denko Materials Co., Ltd. |
Chiyoda-ku, Tokyo |
|
JP |
|
|
Family ID: |
1000005638629 |
Appl. No.: |
17/258747 |
Filed: |
July 10, 2020 |
PCT Filed: |
July 10, 2020 |
PCT NO: |
PCT/JP2019/027416 |
371 Date: |
January 8, 2021 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 25/0657 20130101;
C09J 7/403 20180101; C09J 2301/304 20200801; C09J 2203/326
20130101; H01L 2225/06562 20130101; C09J 2433/00 20130101; H01L
2225/0651 20130101; H01L 25/50 20130101; C09J 2467/006 20130101;
H01L 21/78 20130101; H01L 2224/83862 20130101; C09J 2463/00
20130101; H01L 24/83 20130101; C09J 2461/00 20130101; C09J 7/35
20180101; C09J 11/04 20130101; H01L 21/6836 20130101 |
International
Class: |
C09J 7/35 20060101
C09J007/35; C09J 7/40 20060101 C09J007/40; C09J 11/04 20060101
C09J011/04; H01L 21/683 20060101 H01L021/683; H01L 21/78 20060101
H01L021/78; H01L 25/00 20060101 H01L025/00; H01L 25/065 20060101
H01L025/065; H01L 23/00 20060101 H01L023/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 11, 2018 |
JP |
2018-131431 |
Claims
1. A method for manufacturing a semiconductor device, the method
comprising: a step of preparing a dicing/die-bonding integrated
film including an adhesive layer formed of a heat-curable resin
composition having a melt viscosity of 3100 Pas or higher at
120.degree. C., a tacky adhesive layer, and a base material film in
this order; a step of sticking a surface on the adhesive layer side
of the dicing/die-bonding integrated film and a semiconductor wafer
together; a step of dicing the semiconductor wafer; a step of
expanding the base material film and thereby dividing the
semiconductor wafer and the adhesive layer into individual pieces,
to obtain an adhesive-attached semiconductor element formed of the
individual piece; a step of picking up the adhesive-attached
semiconductor element from the tacky adhesive layer; a step of
laminating the adhesive-attached semiconductor element to another
semiconductor element, with an adhesive of the adhesive-attached
semiconductor element interposed therebetween; and a step of
heat-curing the adhesive.
2. The method for manufacturing a semiconductor device according to
claim 1, wherein a storage modulus of the adhesive layer is 70 MPa
or higher at 35.degree. C.
3. The method for manufacturing a semiconductor device according to
claim 1, wherein the semiconductor wafer is divided into individual
pieces by either stealth dicing or blade dicing, and the base
material film is expanded under cooling conditions.
4. The method for manufacturing a semiconductor device according to
claim 1, wherein the heat-curable resin composition contains a
heat-curable resin, a high-molecular weight component having a
molecular weight of 100000 to 1000000, and a filler, and a content
of the high-molecular weight component based on a total mass of the
heat-curable resin composition is 15% to 66% by mass.
5. The method for manufacturing a semiconductor device according to
claim 4, wherein a content of the filler based on a total mass of
the heat-curable resin composition is 25% to 45% by mass.
6. The method for manufacturing a semiconductor device according to
claim 1, wherein the method is a method for manufacturing a
three-dimensional NAND memory.
7. A heat-curable resin composition used for a process for
manufacturing a semiconductor device, having a melt viscosity of
3100 Pas or higher at 120.degree. C.
8. The heat-curable resin composition according to claim 7, having
a storage modulus of 70 MPa or higher at 35.degree. C.
9. The heat-curable resin composition according to claim 7,
comprising a heat-curable resin, a high-molecular weight component
having a molecular weight of 100000 to 1000000, and a filler,
wherein a content of the high-molecular weight component based on a
total mass of the heat-curable resin composition is 15% to 66% by
mass.
10. The heat-curable resin composition according to claim 9,
wherein a content of the filler based on a total mass of the
heat-curable resin composition is 25% to 45% by mass.
11. The heat-curable resin composition according to claim 7,
wherein the heat-curable resin composition is used for a process
for manufacturing a three-dimensional NAND memory.
12. A dicing/die-bonding integrated film, comprising: a tacky
adhesive layer; and an adhesive layer formed of the heat-curable
resin composition according to claim 7.
13. The dicing/die-bonding integrated film according to claim 12,
wherein a thickness of the adhesive layer is 3 to 40 .mu.m.
Description
TECHNICAL FIELD
[0001] The present disclosure relates to a method for manufacturing
a semiconductor device, a heat-curable resin composition, and a
dicing/die-bonding integrated film.
BACKGROUND ART
[0002] Semiconductor devices are manufactured by performing the
following steps. First, a semiconductor wafer is fixed with a tacky
adhesive sheet for dicing, and the semiconductor wafer in that
state is divided into individual semiconductor chips. After that,
an expanding step, a pickup step, a die bonding step, a reflow
step, a die bonding step, and the like are carried out.
[0003] One of the important characteristics required for
semiconductor devices is connection reliability. In order to
enhance connection reliability, film-shaped adhesives for die
bonding have been developed in consideration of heat resistance,
moisture resistance, reflow resistance, and the like. For example,
Patent Literature 1 discloses an adhesive sheet containing a resin,
which includes a high molecular weight component and a heat-curable
component including an epoxy resin as a main component, and a
filler.
CITATION LIST
Patent Literature
[0004] Patent Literature 1: Japanese Unexamined Patent Publication
No. 2016-190964
SUMMARY OF INVENTION
Technical Problem
[0005] The inventors of the present disclosure are proceeding with
the development of a heat-curable adhesive to be used in a
manufacturing process for a semiconductor device provided with
increased capacity (for example, three-dimensional NAND memory) by
laminating semiconductor elements in multiple stages. Since a wafer
for three-dimensional NAND is composed of a complicated circuit
layer and a relatively thin semiconductor layer (for example, about
15 to 25 .mu.m), there is a problem that semiconductor elements
obtained by dividing this wafer into individual chips are prone to
have warpage.
[0006] FIG. 5(a) is a cross-sectional view schematically
illustrating a structure for a process for manufacturing a
semiconductor device. The structure 30 illustrated in FIG. 5(a)
comprises a substrate 10 and four semiconductor elements S1, S2,
S3, and S4 laminated on the substrate. The four semiconductor
elements S1, S2, S3, and S4 are laminated at positions shifted from
each other in the transverse direction (direction orthogonally
intersecting the direction of lamination) for the connection to the
electrodes (not illustrated in the diagram) formed on the surface
of the substrate 10 (see FIG. 1). The semiconductor element S1 is
adhered to the substrate 10 by means of an adhesive, and an
adhesive is also interposed between the three semiconductor
elements S2, S3, and S4.
[0007] According to the investigation of the inventors of the
present disclosure, in a case in which the semiconductor elements
S1, S2, S3, and S4 each have a complicated circuit layer (upper
surface side) and a relatively thin semiconductor layer (lower
surface side), as illustrated in FIG. 5(b), detachment is liable to
occur between the semiconductor element S1 of the first stage and
the semiconductor element S2 of the second stage. The present
inventors infer the cause for this as follows. [0008] Due to the
complicated circuit layer and the thin semiconductor layer, the
semiconductor elements S1, S2, S3, and S4 have a property of being
easily warped (warping stress) as described above. [0009] An
overhang portion H is formed by laminating a plurality of
semiconductor elements at positions shifted in the transverse
direction. [0010] Since it has been confirmed that detachment does
not occur in the stage where the semiconductor element S2 of the
second stage is mounted, when the semiconductor elements S3 and S4
of the third stage and the fourth stage are mounted, an upward
force (warping stress in the direction of causing detachment from
the semiconductor element S1 of the first stage) increases in the
hangover portion H of the semiconductor element S2 of the second
stage.
[0011] The present disclosure was achieved in view of the
above-described problems, and the present disclosure provides a
method for manufacturing a semiconductor device in which a
plurality of semiconductor elements are laminated and in which
detachment between adjacent semiconductor elements is not likely to
occur. Furthermore, the present disclosure provides a heat-curable
resin composition and a dicing/die-bonding integrated film, which
can be applied to this manufacturing method.
Solution to Problem
[0012] According to an aspect of the present disclosure, there is
provided a method for manufacturing a semiconductor device (for
example, three-dimensional NAND memory) in which a plurality of
semiconductor elements are laminated. This manufacturing method
includes: a step of preparing a dicing/die-bonding integrated film
including an adhesive layer formed of a heat-curable resin
composition having a melt viscosity of 3100 Pas or higher at
120.degree. C., a tacky adhesive layer, and a base material film in
this order; a step of sticking a surface on the adhesive layer side
of the dicing/die-bonding integrated film and a semiconductor wafer
together; a step of dicing the semiconductor wafer; a step of
expanding the base material film and thereby dividing the
semiconductor wafer and the adhesive layer into individual pieces,
to obtain an adhesive-attached semiconductor element formed of the
individual piece; a step of picking up the adhesive-attached
semiconductor element from the tacky adhesive layer; a step of
laminating the adhesive-attached semiconductor element to another
semiconductor element, with the adhesive of the adhesive-attached
semiconductor element interposed therebetween; and a step of
heat-curing the film-shaped adhesive.
[0013] When a heat-curable resin composition having a melt
viscosity of 3100 Pas or higher at 120.degree. C. is employed, even
if the semiconductor element to be adhered has relatively strong
warping stress, an interfacial adhesive force that can withstand
this warping stress can be achieved. Thereby, even if a plurality
of semiconductor elements are laminated, detachment between
adjacent semiconductor elements can be sufficiently suppressed.
[0014] As in the case of a semiconductor wafer for
three-dimensional NAND, in order to divide a relatively thin
semiconductor wafer into individual semiconductor elements, it is
preferable that the semiconductor wafer is subjected to stealth
dicing or blade dicing, and then the base material film is expanded
under cooling conditions (for example, -15.degree. C. to 0.degree.
C.), from the viewpoint of high product yield or the like.
[0015] According to an aspect of the present disclosure, there is
provided a heat-curable resin composition to be used for a
production process for a semiconductor device, the heat-curable
resin composition having a melt viscosity of 3100 Pas or higher at
120.degree. C. This heat-curable resin composition can be applied
to the above-described method for manufacturing a semiconductor
device.
[0016] The heat-curable resin composition contains a heat-curable
resin, a high-molecular weight component having a molecular weight
of 100000 to 1000000 (for example, an acrylic resin), and a filler,
and it is preferable that the content of the high-molecular weight
component based on the total mass of the heat-curable resin
composition is 15% to 50% by mass, while it is preferable that the
content of the filler is 25% to 45% by mass. By adjusting the
contents of the high-molecular weight component and the filler to
the above-described ranges, an adhesive-attached semiconductor
element can be produced more efficiently and stably by subjecting a
semiconductor wafer to stealth dicing or blade dicing and
subsequently performing expansion and pickup under cooling
conditions.
[0017] The present disclosure provides a dicing/die-bonding
integrated film comprising a tacky adhesive layer and an adhesive
layer formed of the above-described heat-curable resin composition.
This integrated film can be applied to the above-described method
for manufacturing a semiconductor device. The thickness of the
adhesive layer is, for example, 3 to 40 .mu.m from the viewpoints
of cost and adhesive strength.
Advantageous Effects of Invention
[0018] According to the present disclosure, there is provided a
method for manufacturing a semiconductor device in which a
plurality of semiconductor elements are laminated and in which
detachment between adjacent semiconductor elements is not likely to
occur. Furthermore, according to the present disclosure, a
heat-curable resin composition and a dicing/die-bonding integrated
film, which can be applied to the above-described manufacturing
method, are provided.
BRIEF DESCRIPTION OF DRAWINGS
[0019] FIG. 1 is a cross-sectional view schematically illustrating
an example of a semiconductor device.
[0020] FIG. 2 is a cross-sectional view schematically illustrating
an example of an adhesive-attached semiconductor element composed
of a film-shaped adhesive and a semiconductor element.
[0021] FIG. 3(a) to FIG. 3(f) are cross-sectional views
schematically illustrating a process for manufacturing an
adhesive-attached semiconductor element.
[0022] FIG. 4 is a cross-sectional view schematically illustrating
a process for manufacturing the semiconductor device illustrated in
FIG. 1.
[0023] FIG. 5(a) is a cross-sectional view schematically
illustrating a process for manufacturing the semiconductor device
illustrated in FIG. 1, and FIG. 5(b) is a cross-sectional view
illustrating a structure in which detachment is occurring between
the semiconductor element of the first stage and the semiconductor
element of the second stage.
[0024] FIG. 6 is a cross-sectional view schematically illustrating
a process for manufacturing the semiconductor device illustrated in
FIG. 1.
[0025] FIG. 7 is a cross-sectional view schematically illustrating
another example of the semiconductor device.
DESCRIPTION OF EMBODIMENTS
[0026] Hereinafter, embodiments of the present disclosure will be
described in detail with reference to the drawings. In the
following description, identical reference numerals will be
assigned to identical or equivalent parts, and any overlapping
descriptions will not be repeated here. Furthermore, unless
particularly stated otherwise, the positional relationship such as
top, bottom, right, and left are based on the positional
relationships illustrated in the drawings. In addition, the
dimensional ratio of a drawing is not limited to the ratio
illustrated in the diagram. Incidentally, the description
"(meth)acryl" in the present specification means "acryl" and
"methacryl" corresponding thereto.
[0027] <Semiconductor Device>
[0028] FIG. 1 is a cross-sectional view schematically illustrating
a semiconductor device according to the present embodiment. A
semiconductor device 100 illustrated in this diagram comprises a
substrate 10; four semiconductor elements S1, S2, S3, and S4
laminated on the surface of the substrate 10; wires W1, W2, W3, and
W4 electrically connecting electrodes (not illustrated in the
diagram) on the surface of the substrate 10 and the four
semiconductor elements S1, S2, S3, and S4; and a sealing layer 50
for sealing these.
[0029] The substrate 10 is, for example, an organic substrate and
may be a metal substrate such as a lead frame. Regarding the
substrate 10, from the viewpoint of suppressing warpage of the
semiconductor device 100, the thickness of the substrate 10 is, for
example, 90 to 180 .mu.m, and may be 90 to 140 .mu.m.
[0030] The four semiconductor elements S1, S2, S3, and S4 are
laminated with a cured product 3 of a film-shaped adhesive 3P (see
FIG. 2) interposed therebetween. The shape of the semiconductor
elements S1, S2, S3, and S4 as viewed in plan view is, for example,
a rectangular shape (square or rectangle). The length of one side
of the semiconductor elements S1, S2, S3, and S4 is, for example, 5
mm or less, and may be 2 to 4 mm or 1 to 4 mm. The thickness of the
semiconductor elements S1, S2, S3, and S4 is, for example, 10 to
170 .mu.m, and may be 10 to 30 .mu.m. The lengths of one side of
the four semiconductor elements S1, S2, S3, and S4 may be the same
or different from each other, and the same also applies to the
thickness.
[0031] <Adhesive-Attached Semiconductor Element>
[0032] FIG. 2 is a cross-sectional view schematically illustrating
an example of an adhesive-attached semiconductor element. An
adhesive-attached semiconductor element 20 illustrated in FIG. 2 is
composed of a film-shaped adhesive 3P and a semiconductor element
S1. As illustrated in FIG. 2, the film-shaped adhesive 3P and the
semiconductor element S1 have substantially the same size. This
also applies to the film-shaped adhesive 3P and the semiconductor
elements S2 S3, and S4. The adhesive-attached semiconductor element
20 is produced by performing a dicing step and a pickup step, as
will be described next.
[0033] With reference to FIG. 3(a) to FIG. 3(f), an example of the
method for producing the adhesive-attached semiconductor element 20
(laminate of a film-shaped adhesive 3P and a semiconductor element
S1) as illustrated in FIG. 2 will be described. First, a
dicing/die-bonding integrated film 8 (hereinafter, referred to as
"film 8" depending on cases) is prepared, and this is disposed in a
predetermined device (not illustrated in the diagram). The film 8
comprises a base material film 1; a tacky adhesive layer 2; and an
adhesive layer 3A in this order. The base material film 1 is, for
example, a polyethylene terephthalate film (PET film). A
semiconductor wafer W is, for example, a thin semiconductor wafer
having a thickness of 10 to 100 .mu.m. The semiconductor wafer W
may be single crystal silicon or may be a compound semiconductor
such as polycrystalline silicon, various ceramics, or gallium
arsenide.
[0034] The adhesive layer 3A is formed of a heat-curable resin
composition as will be described below. From the viewpoints of cost
and the adhesive strength of the cured product, the thickness of
the adhesive layer 3A is, for example, 3 to 40 .mu.m, and may be 3
to 30 .mu.m or 3 to 25 .mu.m.
[0035] As illustrated in FIG. 3(a) and FIG. 3(b), the film 8 is
stuck to one surface of the semiconductor wafer W such that the
adhesive layer 3A comes into contact with the surface. This step is
carried out under the temperature conditions of preferably
50.degree. C. to 100.degree. C., and more preferably 60.degree. C.
to 80.degree. C. When the temperature is 50.degree. C. or higher,
satisfactory adhesiveness between the semiconductor wafer W and the
adhesive layer 3A can be obtained, and when the temperature is
100.degree. C. or lower, excessive flow of the adhesive layer 3A in
this step is suppressed.
[0036] By irradiating the semiconductor wafer W with laser light
along intended cutting lines, modified regions R are formed in the
semiconductor wafer W (stealth dicing) as illustrated in FIG. 3(c).
Instead of stealth dicing, cutting lines may be inserted into the
semiconductor wafer also by blade dicing. Incidentally, the
semiconductor wafer W may be thinned by grinding the semiconductor
wafer W prior to irradiation of the semiconductor wafer W with
laser light or blade dicing.
[0037] As illustrated in FIG. 3(d), the semiconductor wafer W is
divided at the modified regions R by expanding the base material
film 1 at normal temperature or under cooling conditions. Thereby,
the semiconductor wafer W is divided into a large number of
individual semiconductor elements S1, and at the same time, the
adhesive layer 3A is divided into individual pieces of the
film-shaped adhesive 3P. In a case in which the tacky adhesive
layer 2 is, for example, UV-curable, the tacky adhesive layer 2 is
cured by irradiating the tacky adhesive layer 2 with ultraviolet
radiation in a state in which the adhesive-attached semiconductor
elements 20 are separated apart from one another by expansion as
illustrated in FIG. 3(e), and the tacky adhesive force between the
tacky adhesive layer 2 and the adhesive layer 3A is decreased.
After the ultraviolet irradiation, the adhesive-attached
semiconductor elements 20 are detached from the tacky adhesive
layer 2 by pushing up these semiconductor elements with a needle
42, and also, the adhesive-attached semiconductor elements 20 are
picked up by suctioning the elements with a suction collet 44 (see
FIG. 3(f)). In this way, the adhesive-attached semiconductor
elements 20 as illustrated in FIG. 2 are obtained.
[0038] From the viewpoint of suitably dividing the adhesive layer
3A and obtaining film-shaped adhesives 3P having a predetermined
shape and a predetermined size, it is preferable to perform the
expansion of the base material film 1 under cooling conditions.
This temperature condition may be, for example, -15.degree. C. to
0.degree. C.
[0039] <Method for Manufacturing Semiconductor Device>
[0040] A method for manufacturing the semiconductor device 100 will
be described with reference to FIG. 4 to FIG. 6. First, as
illustrated in FIG. 4, a semiconductor element S1 of a first stage
is pressure-bonded onto the surface of a substrate 10. That is, the
semiconductor element S1 is pressure-bonded at a predetermined
position of the substrate 10, with the film-shaped adhesive 3P of
the adhesive-attached semiconductor element 20 interposed
therebetween. It is preferable that this pressure-bonding treatment
is carried out, for example, for 0.5 to 3.0 seconds under the
conditions of 80.degree. C. to 180.degree. C. and 0.01 to 0.50 MPa.
Next, the film-shaped adhesive 3P is cured by heating. It is
preferable that this curing treatment is carried out, for example,
for 5 minutes or longer under the conditions of 60.degree. C. to
175.degree. C. and 0.01 to 1.0 MPa. Thereby, the film-shaped
adhesive 3P is cured to form a cured product 3. The curing
treatment of the film-shaped adhesive 3P may be carried out under a
pressurized atmosphere, from the viewpoint of reducing voids.
[0041] A semiconductor element S2 of a second stage is mounted on
the surface of the semiconductor element S1 in the same manner as
in the mounting of the semiconductor element S1 on the substrate
10. Furthermore, a structure 30 as illustrated in FIG. 5(a) is
produced by mounting semiconductor elements S3 and S4 of a third
stage and a fourth stage. The semiconductor elements S1, S2, S3,
and S4, and the substrate 10 are electrically connected using wires
W1, W2, W3, and W4 (see FIG. 5), subsequently the semiconductor
elements and the wires are sealed by a sealing layer 50, and thus,
the semiconductor device 100 illustrated in FIG. 1 is
completed.
[0042] <Heat-Curable Resin Composition>
[0043] The heat-curable resin composition constituting the
film-shaped adhesive 3P will be described. Incidentally, the
film-shaped adhesive 3P is a resultant product of dividing the
adhesive layer 3A into individual pieces, and both of them comprise
the same heat-curable resin composition. This heat-curable resin
composition may go through, for example, a semi-cured (stage B)
state and then enter a completely cured product (stage C) state by
a subsequent curing treatment.
[0044] The heat-curable resin composition has a melt viscosity at
120.degree. C. of 3100 Pas or more. By using a heat-curable resin
composition, even if the semiconductor element to be adhered has
relatively strong warping stress, an interfacial adhesive force
that can withstand this warping stress can be achieved. Thereby,
even if a plurality of semiconductor elements are laminated,
detachment between adjacent semiconductor elements can be
sufficiently suppressed. The melt viscosity at 120.degree. C. of
the heat-curable resin composition may be 3100 to 40000 Pas or may
be 5000 to 35000 Pas. The lower limit value of this melt viscosity
may be 13000 Pas or may be 14000 Pas. Incidentally, the melt
viscosity means a measurement value obtainable by performing
measurement while applying 5% strain to the heat-curable resin
composition molded into a film shape using ARES (manufactured by TA
Instruments, Inc.) and while raising the temperature at a rate of
temperature increase of 5.degree. C./min.
[0045] The heat-curable resin composition (before curing treatment)
has, for example, a storage modulus at 35.degree. C. of 70 MPa or
higher. By using such a heat-curable resin composition, even if the
semiconductor element to be adhered has relatively strong warping
stress, a cohesive force that can withstand this warping stress can
be achieved. Thereby, even if a plurality of semiconductor elements
are laminated, detachment between adjacent semiconductor elements
can be sufficiently suppressed. The storage modulus at 35.degree.
C. of the heat-curable resin composition may be 70 to 1000 MPa or
may be 80 to 900 MPa. Incidentally, the storage modulus means a
value obtainable by performing measurement using the following
apparatus and conditions. [0046] Dynamic viscoelasticity measuring
apparatus: Rheogel E-4000 (manufactured by UBM) [0047] Object of
measurement: Heat-curable resin composition molded into film shape
[0048] Rate of temperature increase: 3.degree. C./min [0049]
Frequency: 10 Hz
[0050] It is preferable that the heat-curable resin composition
includes the following components.
[0051] (a) A heat-curable resin (hereinafter, may be simply
referred to as "component (a)")
[0052] (b) A high-molecular weight component (hereinafter, may be
simply referred to as "component (b)")
[0053] (c) A filler (hereinafter, may be simply referred to as
"component (c)")
[0054] According to the present embodiment, in a case in which the
(a) heat-curable resin includes an epoxy resin (hereinafter, may be
simply referred to as "component (a1)"), it is preferable that the
(a) heat-curable resin includes a phenolic resin (hereinafter, may
be simply referred to as "component (a2)") that can serve as a
curing agent for an epoxy resin. Incidentally, in a case in which
the (b) high-molecular weight component has a functional group that
is heat-cured with a phenolic resin (glycidyl group or the like),
an epoxy resin may not be separately used as the (a) heat-curable
resin.
[0055] The heat-curable resin composition may further include the
following components.
[0056] (d) A coupling agent (hereinafter, may be simply referred to
as "component (d)")
[0057] (e) A curing accelerator (hereinafter, may be simply
referred to as "component (e)")
[0058] The content of the component (a) based on the total mass of
the heat-curable resin composition is, for example, 30% by mass or
less and may be 5% to 30% by mass. The content of the component (b)
based on the total mass of the heat-curable resin composition is,
for example, 15% to 66% by mass and may be 15% to 50% by mass. The
content of the component (c) based on the total mass of the
heat-curable resin composition is, for example, 25% to 50% by mass
and may be 25% to 45% by mass. By adjusting the contents of the
component (b) and the component (c) to the above-described ranges,
an adhesive-attached semiconductor element can be produced more
efficiently and stably by subjecting a semiconductor wafer to
stealth dicing or blade dicing and then expanding and picking up
semiconductor elements under cooling conditions.
[0059] Specifically, as the content of the component (b) is 66% by
mass or less, there is a tendency that excellent divisibility is
obtained when expansion is performed under cooling conditions (see
FIG. 3(d)). Furthermore, when the content of the component (b) is
15% by mass or more and the content of the component (c) is 50% by
mass or less, the bulk strength under cooling conditions is
sufficiently high, and the semiconductor wafer is likely to be
divided into a predetermined shape and a predetermined size by
expansion. Incidentally, in order to adjust the melt viscosity at
120.degree. C. of the heat-curable resin composition to the
above-described range, the amounts of the (a) heat-curable resin,
the (b) high-molecular weight component, and the (c) filler may be
appropriately adjusted.
[0060] The storage modulus at 150.degree. C. of a cured product
(stage C) of the heat-curable resin composition is preferably 10
MPa or higher, and more preferably 25 MPa or higher, from the
viewpoint of connection reliability, and the storage modulus may
also be 50 MPa or higher or 100 MPa or higher. Incidentally, the
upper limit value of the storage modulus is, for example, 600 MPa
and may be 500 MPa. The storage modulus at 150.degree. C. of a
cured product of the heat-curable resin composition can be measured
using a product obtained by curing the heat-curable resin
composition under the temperature conditions of 175.degree. C. as a
sample and using a dynamic viscoelasticity apparatus.
[0061] Hereinafter, the various components included in the
heat-curable resin composition will be described.
[0062] (a) Heat-Curable Resin
[0063] Regarding the component (a1), any compound having an epoxy
group in the molecule can be used without particular
limitation.
[0064] Examples of the component (a1) include a bisphenol A type
epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type
epoxy resin, a phenol novolac type epoxy resin, a cresol novolac
type epoxy resin, a bisphenol A novolac type epoxy resin, a
bisphenol F novolac type epoxy resin, a dicyclopentadiene
skeleton-containing epoxy resin, a stilbene type epoxy resin, a
triazine skeleton-containing epoxy resin, a fluorene
skeleton-containing epoxy resin, a triphenolphenolmethane type
epoxy resin, a biphenyl type epoxy resin, a xylylene type epoxy
resin, a biphenylaralkyl type epoxy resin, a naphthalene type epoxy
resin, a polyfunctional phenol, and a diglycidyl ether compound of
a polycyclic aromatic compound such as anthracene. These may be
used singly or in combination of two or more kinds thereof. Among
these, the component (a1) may be a cresol novolac type epoxy resin,
a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin,
from the viewpoint of heat resistance.
[0065] The epoxy equivalent of the component (a1) may be 90 to 300
g/eq, 110 to 290 g/eq, or 130 to 280 g/eq. When the epoxy
equivalent of the component (a1) is in such a range, there is a
tendency that fluidity can be secured while the bulk strength of
the film-shaped adhesive is maintained.
[0066] The content of the component (a1) may be 50 parts by mass or
less, 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30
parts by mass, with respect to 100 parts by mass of the total mass
of the component (a), component (b), and component (c). When the
content of the component (a1) is 5 parts by mass or more, the
embeddability of the film-shaped adhesive tends to become more
satisfactory. When the content of the component (a1) is 50 parts by
mass or less, there is a tendency that the occurrence of bleeding
can be further suppressed.
[0067] Regarding the component (a2), any component having a
phenolic hydroxyl group in the molecule can be used without
particular limitation. Examples of the component (a2) include a
novolac type phenolic resin obtainable by condensing or
co-condensing a phenol such as phenol, cresol, resorcin, catechol,
bisphenol A, bisphenol F, phenylphenol, or aminophenol, and/or a
naphthol such as .alpha.-naphthol, .beta.-naphthol, or
dihydroxynaphthalene, and a compound having an aldehyde group such
as formaldehyde in the presence of an acidic catalyst; a phenol
aralkyl resin synthesized from a phenol such as allylated bisphenol
A, allylated bisphenol F, allylated naphthalenediol, phenol
novolac, or phenol, and/or a naphthol, and dimethoxyparaxylene or
bis(methoxymethyl)biphenyl; and a naphthol aralkyl resin. These may
be used singly or in combination of two or more kinds thereof.
Among these, the component (a2) may be a phenol aralkyl resin, a
naphthol aralkyl resin, or a novolac type phenol resin, from the
viewpoints of moisture absorption property and heat resistance.
[0068] The hydroxyl group equivalent of the component (a2) may be
80 to 250 g/eq, 90 to 200 g/eq, or 100 to 180 g/eq. When the
hydroxyl group equivalent of the component (a2) is in such a range,
there is a tendency that the adhesive force can be maintained
higher while maintaining the fluidity of the film-shaped
adhesive.
[0069] The softening point of the component (a2) may be 50.degree.
C. to 140.degree. C., 55.degree. C. to 120.degree. C., or
60.degree. C. to 100.degree. C.
[0070] The content of the component (a2) may be 5 to 50 parts by
mass, 10 to 40 parts by mass, or 20 to 30 parts by mass, with
respect to 100 parts by mass of the total mass of the component
(a), component (b), and component (c). When the content of the
component (a2) is 5 parts by mass or more, more satisfactory
curability tends to be obtained. When the content of the component
(a2) is 50 parts by mass or less, the embeddability of the
film-shaped adhesive tends to become more satisfactory.
[0071] The ratio of the epoxy equivalent of the component (a1) and
the hydroxyl group equivalent of the component (a2) (epoxy
equivalent of component (a1)/hydroxyl group equivalent of component
(a2)) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35,
0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45, from the
viewpoint of curability. When this equivalent ratio is 0.30/0.70 or
higher, more sufficient curability tends to be obtained. When this
equivalent ratio is 0.70/0.30 or lower, excessive increase of
viscosity can be prevented, and more sufficient fluidity can be
obtained.
[0072] (b) High-Molecular Weight Component
[0073] It is preferable that the component (b) has a glass
transition temperature (Tg) of 50.degree. C. or lower. Examples of
the component (b) include an acrylic resin, a polyester resin, a
polyamide resin, a polyimide resin, a silicone resin, a butadiene
resin, an acrylonitrile resin, and modification products of
these.
[0074] The component (b) may include an acrylic resin from the
viewpoint of fluidity. Here, the acrylic resin means a polymer
including a constituent unit derived from a (meth)acrylic acid
ester. It is preferable that the acrylic resin is a polymer
including a constituent unit derived from a (meth)acrylic acid
ester having a crosslinkable functional group such as an epoxy
group, an alcoholic or phenolic hydroxyl group, or a carboxyl
group, as a constituent unit. Furthermore, the acrylic resin may be
an acrylic rubber such as a copolymer of a (meth)acrylic acid ester
and acrylonitrile.
[0075] The glass transition temperature (Tg) of the acrylic resin
may be -50.degree. C. to 50.degree. C. or -30.degree. C. to
30.degree. C. When the Tg of the acrylic resin is -50.degree. C. or
higher, there is a tendency that excessive increase of the
pliability of the adhesive composition can be prevented. Thereby,
it becomes easy to cut the film-shaped adhesive at the time of
wafer dicing, and the occurrence of burring can be prevented. When
the Tg of the acrylic resin is 50.degree. C. or lower, there is a
tendency that deterioration of pliability of the adhesive
composition can be suppressed. Thereby, when the film-shaped
adhesive is stuck to a wafer, voids tend to be sufficiently easily
embedded. Furthermore, it is possible to prevent chipping at the
time of dicing caused by deterioration of the tight adhesiveness to
the wafer. Here, the glass transition temperature (Tg) means a
value measured using a DSC (thermal differential scanning
calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku
Corp.).
[0076] The weight average molecular weight (Mw) of the acrylic
resin is, for example, 100000 to 3000000, and may be 100000 to
1000000, 100000 to 800000, or 300000 to 2000000. When the Mw of the
acrylic resin is in such a range, the film-forming properties,
strength in the film form, flexibility, tackiness, and the like can
be appropriately controlled, and at the same time, excellent reflow
properties are obtained, and embeddability can be enhanced. Here,
the Mw means a value measured by gel permeation chromatography
(GPC) and converted using a calibration curve based on polystyrene
standards.
[0077] Examples of a commercially available product of the acrylic
resin include SG-70L, SG-708-6, WS-023 EK30, SG-P3, SG-280 EK23,
HTR-860P-3CSP, and HTR-860P-3CSP-3DB (all manufactured by Nagase
ChemteX Corp.).
[0078] The content of the component (b) may be 5 to 70 parts by
mass, 10 to 50 parts by mass, or 15 to 30 parts by mass, with
respect to 100 parts by mass of the total mass of the component
(a), component (b), and component (c). When the content of the
component (b) is 5 parts by mass or more, the control of fluidity
at the time of molding and the handleability at high temperatures
can be made more satisfactory. When the content of the component
(b) is 70 parts by mass or less, the embeddability can be made more
satisfactory.
[0079] (c) Filler
[0080] Examples of the component (c) include, for example,
inorganic fillers such as aluminum hydroxide, magnesium hydroxide,
calcium carbonate, magnesium carbonate, calcium silicate, magnesium
silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum
nitride, aluminum borate whiskers, boron nitride, and silica. These
may be used singly or in combination of two or more kinds thereof.
Among these, the component (c) may be silica from the viewpoint of
compatibility with resins.
[0081] The average particle size of the component (c) may be 0.005
to 1 .mu.m or 0.05 to 0.5 .mu.m, from the viewpoint of enhancing
adhesiveness.
[0082] Here, the average particle size means a value that can be
determined by converting from the BET specific surface area.
[0083] The content of the component (c) may be 5 to 50 parts by
mass, 15 to 45 parts by mass, or 25 to 40 parts by mass, with
respect to 100 parts by mass of the total mass of the component
(a), component (b), and component (c). When the content of the
component (c) is 5 parts by mass or more, the fluidity of the
film-shaped adhesive tends to be further enhanced. When the content
of the component (c) is 50 parts by mass or less, the dicing
characteristics of the film-shaped adhesive tend to become more
satisfactory.
[0084] (d) Coupling Agent
[0085] The component (d) may be a silane coupling agent. Examples
of the silane coupling agent include
.gamma.-ureidopropyltriethoxysilane,
.gamma.-mercaptopropyltrimethoxysilane,
3-phenylaminopropyltrimethoxysilane, and
3-(2-aminoethyl)aminopropyltrimethoxysilane. These may be used
singly or in combination of two or more kinds thereof.
[0086] The content of the component (d) may be 0.01 to 5 parts by
mass with respect to 100 parts by mass of the total mass of the
component (a), component (b), and component (c).
[0087] (e) Curing Accelerator
[0088] The component (e) is not particularly limited, and any
compound that is generally used can be used. Examples of the
component (e) include an imidazole and derivatives thereof, an
organophosphorus-based compound, a secondary amine, a tertiary
amine, and a quaternary ammonium salt. These may be used singly or
in combination of two or more kinds thereof. Among these, from the
viewpoint of reactivity, the component (e) may be an imidazole and
derivatives thereof.
[0089] Examples of the imidazole include 2-methylimidazole,
1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and
1-cyanoethyl-2-methylimidazole. These may be used singly or in
combination of two or more kinds thereof.
[0090] The content of the component (e) may be 0.01 to 1 part by
mass with respect to 100 parts by mass of the total mass of the
component (a), component (b), and component (c).
[0091] <Dicing/Die-Bonding Integrated Film and Method for
Manufacturing Same>
[0092] The dicing/die-bonding integrated film 8 illustrated in FIG.
3(a) and a method for manufacturing the same will be described. The
method for manufacturing the film 8 includes a step of applying a
varnish of an adhesive composition containing a solvent on a base
material film for adhesive layer (not illustrated in the diagram);
and a step of heating and drying the applied varnish at 50.degree.
C. to 150.degree. C. and thereby forming an adhesive layer 3A.
[0093] The varnish of the adhesive composition can be prepared by,
for example, mixing or kneading the components (a) to (c), as well
as optionally the component (d) and the component (e) in a solvent.
Mixing or kneading can be carried out using a dispersing machine
such as conventional stirrer, a Raikai mixer, a three-roll, or a
ball mill and by appropriately combining these.
[0094] The solvent for producing a varnish is not limited so long
as the various components described above can be uniformly
dissolved, kneaded, or dispersed, and any conventionally known
solvent can be used. Examples of such a solvent include
ketone-based solvents such as acetone, methyl ethyl ketone, methyl
isobutyl ketone, or cyclohexanone; dimethylformamide,
dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From
the viewpoint that the drying rate is fast and the price is low, it
is preferable to use methyl ethyl ketone, cyclohexanone, or the
like.
[0095] The base material film for adhesive layer is not
particularly limited, and examples include a polyester film, a
polypropylene film (OPP film or the like), a polyethylene
terephthalate film, a polyimide film, a polyetherimide film, a
polyether naphthalate film, and a methylpentene film.
[0096] Regarding the method for applying a varnish on a base
material film, any known method can be used, and examples include a
knife coating method, a roll coating method, a spray coating
method, a gravure coating method, a bar coating method, and a
curtain coating method. The conditions for heating and drying are
not particularly limited so long as they are conditions in which
the used solvent is sufficiently volatilized; however, for example,
heating and drying can be carried out by heating at 50.degree. C.
to 150.degree. C. for 1 to 30 minutes. Heating and drying may be
carried out by raising the temperature stepwise to a temperature in
the range of 50.degree. C. to 150.degree. C. By volatilizing the
solvent included in the varnish by heating and drying, a laminate
film of a base material film and an adhesive layer 20A can be
obtained.
[0097] The film 8 can be obtained by sticking the laminate film
obtained as described above and a dicing film (laminate of a base
material film 1 and a tacky adhesive layer 2) together. Examples of
the base material film 1 include plastic films such as a
polytetrafluoroethylene film, a polyethylene terephthalate film, a
polyethylene film, a polypropylene film, a polymethylpentene film,
and a polyimide film. Furthermore, the base material film 1 may be
subjected to a surface treatment such as primer coating, a UV
treatment, a corona discharge treatment, a polishing treatment, or
an etching treatment, as necessary. The tacky adhesive layer 2 may
be a UV-curable type or may be a pressure-sensitive type. The film
8 may further comprise a protective film (not illustrated in the
diagram) covering the tacky adhesive layer 2.
[0098] Thus, embodiments of the present disclosure have been
described in detail; however, the present invention is not intended
to be limited to the above-described embodiments. For example, in
the above-described embodiments, a package in which four
semiconductor elements are laminated has been illustrated as an
example; however, the number of semiconductor elements to be
laminated is not limited to this. Furthermore, in the
above-described embodiments, an embodiment in which a plurality of
semiconductor elements are laminated by shifting the positions in a
direction orthogonally intersecting the direction of lamination of
the semiconductor elements has been illustrated as an example;
however, as illustrated in FIG. 7, the semiconductor elements may
be laminated without shifting the positions.
EXAMPLES
[0099] Hereinafter, the present disclosure will be more
specifically described by way of Examples. However, the present
invention is not intended to be limited to the following
Examples.
Examples 1 to 12 and Comparative Examples 1 to 5
[0100] Varnishes (17 kinds in total) including the components shown
in Tables 1 to 4 were prepared as follows. That is, cyclohexanone
was added to a composition including an epoxy resin and a phenolic
resin as heat-curable resins and a filler, and the mixture was
stirred. An acrylic rubber as a high-molecular weight component was
added to this, the mixture was stirred, and then a coupling agent
and a curing accelerator were further added thereto. The mixture
was stirred until the various components became sufficiently
uniform, and thereby a varnish was obtained.
[0101] The components described in Tables 1 to 4 are as
follows.
[0102] (Epoxy Resin) [0103] YDCN-700-10: Cresol novolac type epoxy
resin, manufactured by Nippon Steel & Sumikin Chemical Co.,
Ltd., epoxy equivalent 210, softening point 75.degree. C. to
85.degree. C. [0104] EXA-830CRP (trade name): Bisphenol F type
epoxy resin, manufactured by DIC Corp., epoxy equivalent 162,
liquid at normal temperature [0105] YDF-8170C: Bisphenol F type
epoxy resin, manufactured by Nippon Steel & Sumikin Chemical
Co., Ltd., epoxy equivalent 159, liquid at normal temperature
[0106] (Phenolic Resin) [0107] MILEX XLC-LL ("MILEX" is a
registered trademark): manufactured by Mitsui Chemicals, Inc.,
hydroxyl group equivalent 175, softening point 77.degree. C. [0108]
PHENOLITE LF-4871 ("PHENOLITE" is a registered trademark):
manufactured by DIC Corp., hydroxyl group equivalent 118, softening
point 130.degree. C.
[0109] (High-Molecular Weight Component) [0110] HTR-860P:
manufactured by Nagase ChemteX Corp., acrylic rubber, weight
average molecular weight 800000, Tg -7.degree. C.
[0111] (Filler) [0112] SC-2050-HLG: manufactured by Admatechs Co.,
Ltd., silica filler dispersion liquid, average particle size 0.50
.mu.m, largest particle size 1.0 .mu.m or less [0113] AEROSIL 8972
("AEROSIL" is a registered trademark): manufactured by NIPPON
AEROSIL CO., LTD., silica particles, average particle size 0.016
.mu.m, largest particle size 1.0 .mu.m or less
[0114] (Coupling Agent) [0115] A-189:
.gamma.-Mercaptopropyltrimethoxysilane, manufactured by Momentive
Performance Materials Japan LLC [0116] A-1160:
.gamma.-Ureidopropyltriethoxysilane, manufactured by Momentive
Performance Materials Japan LLC
[0117] (Curing Accelerator) [0118] CUREZOL 2PZ-CN ("CUREZOL" is a
registered trademark): 1-Cyanoethyl-2-phenylimidazole, manufactured
by SHIKOKU CHEMICALS CORPORATION
[0119] The varnish was filtered through a 500-mesh filter and
degassed in a vacuum. The varnish after degassing in a vacuum was
applied on a polyethylene terephthalate (PET) film (thickness 38
.mu.m) that had been subjected to a mold release treatment. The
applied varnish was heated and dried in two stages, that is, for 5
minutes at 90.degree. C. and subsequently for 5 minutes at
140.degree. C. In this way, an adhesive film comprising a
film-shaped adhesive (thickness 7 .mu.m) in the stage B state on a
PET film as a base material film was obtained.
[0120] (Measurement of Melt Viscosity of Film-Shaped Adhesive)
[0121] The melt viscosity at 120.degree. C. of the film-shaped
adhesive was measured by the following method. That is, a plurality
of layers of the film-shaped adhesive having a thickness of 7 .mu.m
were laminated to adjust the thickness to about 300 .mu.m, and this
was punched into a size of 10 mm.times.10 mm to obtain a sample for
measurement. A circular aluminum plate jig having a diameter of 8
mm was mounted in a dynamic viscoelasticity apparatus, ARES
(manufactured by TA Instruments, Inc.), and the above-described
sample was mounted on this plate jig. Subsequently, measurement was
made while raising the temperature to 130.degree. C. at a rate of
temperature increase of 5.degree. C./min while applying 5% strain
at 35.degree. C., and the value of the melt viscosity at
120.degree. C. was recorded. The results are presented in Tables 1
to 4.
[0122] (Measurement of Storage Modulus of Film-Shaped Adhesive)
[0123] The storage modulus at 35.degree. C. of the film-shaped
adhesive was measured using a dynamic viscoelasticity measuring
apparatus (Rheogel E-4000) manufactured by UBM. That is, a
plurality of layers of the film-shaped adhesive having a thickness
of 7 .mu.m were laminated to adjust the thickness to about 170
.mu.m, and this was cut into a size of 4 mm in width.times.33 mm in
length to obtain a sample for measurement. The sample was mounted
in a dynamic viscoelasticity measuring apparatus (product name:
Rheogel E-4000, manufactured by UBM), a tensile load was applied
thereto, and measurement was made at a frequency of 10 Hz and a
rate of temperature increase of 3.degree. C./min. Thus, the storage
modulus at 35.degree. C. was measured. The results are presented in
Tables 1 to 4.
[0124] [Evaluation of Divisibility of Film-Shaped Adhesive]
[0125] A dicing/die-bonding integrated film was produced by
sticking each of the film-shaped adhesives (thickness 120 .mu.m)
according to Examples and Comparative Examples and a tacky adhesive
film for dicing (manufactured by Maxell Holdings, Ltd.)
together.
[0126] Modified regions were formed in a semiconductor wafer by
irradiating the semiconductor wafer with a laser as described
below, and then the divisibility of the film-shaped adhesive was
evaluated by carrying out an expanding step under low temperature
conditions. That is, a semiconductor wafer (silicon wafer,
thickness 50 .mu.m, outer diameter 12 inches) was prepared. A
dicing/die-bonding integrated film was stuck to the semiconductor
wafer such the film-shaped adhesive tightly adhered to one surface
of the semiconductor wafer. The laminate including the
semiconductor wafer (semiconductor wafer/film-shaped adhesive/tacky
adhesive layer/base material layer) was subjected to stealth dicing
using a laser dicing apparatus (manufactured by TOKYO SEIMITSU CO.,
LTD., MAHOH DICING MACHINE). The conditions were set as follows.
[0127] Laser light source: Semiconductor laser excitation Nd (YAG
laser)
[0128] Wavelength: 1064 nm
[0129] Laser light spot cross-sectional area: 3.14.times.10.sup.-8
cm.sup.2
[0130] Oscillation form: Q switch pulse
[0131] Repeat frequency: 100 kHz
[0132] Pulse width: 30 ns
[0133] Output power: 20 .mu.J/pulse
[0134] Laser light quality: TEM00
[0135] Polarization characteristics: Linear polarization [0136]
Magnification ratio of light condensing lens: 50 times [0137] NA:
0.55 [0138] Transmittance to laser light wavelength: 60% [0139]
Movement speed of the table on which the semiconductor wafer is
placed: 100 mm/sec
[0140] The laminate (semiconductor wafer/adhesive layer/tacky
adhesive layer/base material layer) including the semiconductor
wafer after the formation of modified regions was fixed to an
expanding apparatus. Next, the film-shaped adhesive and the
semiconductor wafer were split by expanding the dicing film (tacky
adhesive layer/base material) under the following conditions.
Thereby, an adhesive-attached semiconductor element was
obtained.
[0141] Apparatus: DDS2300 (Fully Automatic Die Separator)
manufactured by DISCO Corporation
[0142] Cool expanding conditions:
[0143] Temperature: -15.degree. C., Height: 9 mm, Cooling time: 60
seconds
[0144] Speed: 300 mm/sec, Waiting time: 0 seconds
[0145] The tacky adhesive layer after the expanding step was
irradiated with ultraviolet radiation through the base material
layer side for 3 seconds at an illuminance of 70 mW/cm.sup.2. The
pickup property of the adhesive-attached semiconductor elements was
evaluated using a flexible die bonder DB-730 (trade name)
manufactured by Renesas Electronics Corp. As a collet for pickup,
RUBBER TIP 13-087E-33 (trade name, size: 5.times.5 mm) manufactured
by Micro-Mechanics was used. As a thrust pin, EJECTOR NEEDLE
SEN2-83-05 (trade name, diameter: 0.7 mm, tip shape: semicircle
having a diameter of 350 .mu.m) manufactured by Micro-Mechanics was
used. Five thrust pins were disposed at a pin center spacing of 4.2
mm. The pickup conditions were set as follows. [0146] Thrust speed
of pins: 10 mm/second [0147] Thrust height: 200 .mu.m
[0148] After the stealth dicing step, the presence or absence of
undivided adhesive-attached semiconductor elements was visually
observed, and an evaluation was performed according to the
following criteria. The results are presented in Tables 1 to 4.
[0149] A: There were no undivided adhesive-attached semiconductor
elements.
[0150] B: There were one or more undivided adhesive-attached
semiconductor elements.
[0151] [Presence or Absence of Detachment after Lamination of Four
Stages]
[0152] A sample (adhesive-attached semiconductor element) in which
the film-shaped adhesive had been suitably divided was used, and a
structure having the same configuration as that of the structure
illustrated in FIG. 5(a) was produced for Examples or Comparative
Examples. After the semiconductor element of the fourth stage was
laminated, whether detachment occurred between the first stage and
the second stage was visually observed, and an evaluation was
performed according to the following criteria. The results are
presented in Tables 1 to 4.
[0153] A: Detachment did not occur in all samples.
[0154] B: There were one or more samples in which detachment had
occurred.
[0155] [Evaluation of Reflow Resistance Characteristics]
[0156] Among the samples produced for the evaluation concerning the
presence or absence of detachment, samples in which detachment did
not occur were used to perform an evaluation of the reflow
resistance characteristics by the following method. That is, a
package for evaluation was obtained by sealing the semiconductor
elements laminated in four stages with a mold sealing material
(manufactured by Hitachi Chemical Co., Ltd., trade name
"CEL-9750ZHF10"). Incidentally, the conditions for resin sealing
were set to 175.degree. C./6.7 MPa/90 seconds, and the curing
conditions were set to 175.degree. C. and 5 hours.
[0157] Twenty units of the above-described package were prepared,
and these were caused to absorb moisture by exposing them to an
environment defined by JEDEC (level 3, 30.degree. C., 60 RH %, 192
hours). Subsequently, the packages after moisture absorption were
passed through an IR reflow furnace (260.degree. C., highest
temperature 265.degree. C.) three times. An evaluation was
performed according to the following criteria. The results are
presented in Tables 1 to 4.
[0158] A: Damage of the package, a change in thickness, detachment
at the interface between the film-shaped adhesive and the
semiconductor element, and the like were observed in not even one
of the twenty packages.
[0159] B: Damage of the package, a change in thickness, detachment
at the interface between the film-shaped adhesive and the
semiconductor element, and the like were observed in at least one
of the twenty packages.
TABLE-US-00001 TABLE 1 Example 1 Example 2 Example 3 Example 4
Example 5 Resin Epoxy resin YDCN-700-10 10 10 10 20 5 component
EXA-830CRP -- -- -- -- -- [parts by YDF-8170C -- -- -- -- -- mass]
Phenolic resin XLC-LL -- -- -- -- 5 LF-4871 10 10 10 10 --
High-molecular weight component HTR-860P 40 45 50 45 60 Filler
[parts by mass] SC-2050-HLG 40 35 30 25 30 R972 -- -- -- -- --
Coupling agent [parts by mass] A-189 -- -- -- -- 0.4 A-1160 -- --
-- -- 1 Curing accelerator [parts by mass] 2PZ-CN 0.2 0. 15 0.1 0.1
0.01 Content ratio of high-molecular weight component mass % 40 45
50 45 59 (with respect to total mass of heat-curable resin
composition) Content ratio of filler [mass %] 40 35 30 25 30 (with
respect to total mass of heat-curable resin composition) Melt
vicosity @ 120.degree. C. [Pa s] 35000 31000 20000 14000 17000
Storage modulus before curing at 35.degree. C. [MPa] 230 220 190
160 100 Evaluation Divibility of filin-shaped adhesive A A A A A
results Presence or absence of detachment A A A A A after
lamination of four stages Reflow resistance A A A A A
TABLE-US-00002 TABLE 2 Example 6 Example 7 Example 8 Example 9
Resin Epoxy resin YDCN-700-10 25 20 25 20 component EXA-830CRP --
-- -- -- [parts by YDF-8170C -- -- -- 5 mass] Phenolic resin XLC-LL
-- -- -- -- LF-4871 10 10 15 15 High-molecular weight component
HTR-860P 40 35 30 30 Filler [parts by mass] SC-2050-HLG 25 35 30 30
R972 -- -- -- -- Coupling agent [parts by mass] A-189 -- -- -- --
A-1160 -- -- -- -- Curing accelerator [parts by mass] 2PZ-CN 0.1
0.1 0.1 0.1 Content ratio of high-molecular weight component mass %
40 35 30 30 (with respect to total mass of heat-curable resin
composition) Content ratio of filler [mass %] 25 35 30 30 (with
respect to total mass of heat-curable resin composition) Melt
vicosity @ 120.degree. C. [Pa s] 9000 8000 6000 5000 Storage
modulus before curing at 35.degree. C. [MPa] 400 700 600 300
Evaluation Divibility of filin-shaped adhesive A A A A results
Presence or absence of detachment A A A A after lamination of four
stages Reflow resistance A A A A
TABLE-US-00003 TABLE 3 Example 10 Example 11 Example 12 Resin Epoxy
resin YDCN-700-10 -- -- -- component EXA-830CRP -- -- -- [parts by
YDF-8170C -- -- -- mass] Phenolic resin XLC-LL -- -- -- LF-4871 5
40 35 High-molecular weight component HTR-860P 50 30 40 Filler
[parts by mass] SC-2050-HLG 45 30 25 R972 -- -- -- Coupling agent
[parts by mass] A-189 -- -- -- A-1160 -- -- -- Curing accelerator
[parts by mass] 2PZ-CN 0.01 0.01 0.01 Content ratio of
high-molecular weight component [mass %] 50 30 40 (with respect to
total mass of heat-curable resin composition) Content ratio of
filler [mass %] 45 30 25 (with respect to total mass of
heat-curable resin composition) Melt viscosity at 120.degree. C.
[Pa s] 40000 8000 10000 Storage modulus before curing, at
35.degree. C. [MPa] 600 450 260 Evaluation Divisibility of
film-shaped adhesive A A A results Presence or absence detachment A
A A after lamination of four stages Reflow resistance A A A
TABLE-US-00004 TABLE 4 Comparative Comparative Comparative
Comparative Comparative Example 1 Example 2 Example 3 Example 4
Example 5 Resin Epoxy resin YDCN-700-10 20 5 8 10 10 component
EXA-830CRP 10 -- -- -- -- [parts by YDF-8170C -- 15 -- -- 15 mass]
Phenolic resin XLC-LL 20 -- 8 10 -- LF-4871 -- 15 -- -- 15
High-molecular weight component HTR-860P 45 15 70 65 30 Filler
[parts by mass] SC-2050-HLG -- 50 16 -- 30 R972 5 -- -- 10 --
Coupling agent [parts by mass] A-189 0.1 0.1 0.4 0.4 -- A-1160 0.2
0.3 1 1 -- Curing accelerator [parts by mass] 2PZ-CN 0.1 0.1 0.01
0.01 0.1 Content ratio of high-molecular weight component mass % 45
15 68 67 30 (with respect to total mass of heat-curable resin
composition) Content ratio of filler [mass %] 5 5 15 10 30 (with
respect to total mass of heat-curable resin composition) Melt
vicosity @ 120.degree. C. [Pa s] 8000 5000 17000 26000 3000 Storage
modulus before curing at 35.degree. C. [MPa] 50 500 70 60 40
Evaluation Divibility of filin-shaped adhesive A B B B A results
Presence or absence of detachment B B A A B after lamination of
four stages Reflow resistance A A A A A
INDUSTRIAL APPLICABILITY
[0160] According to the present disclosure, there is provided a
method for manufacturing a semiconductor device in which a
plurality of semiconductor elements are laminated and in which
detachment between adjacent semiconductor elements is not likely to
occur. Furthermore, according to the present disclosure, a
heat-curable resin composition and a dicing/die-bonding integrated
film, which can be applied to the above-described manufacturing
method, are provided.
REFERENCE SIGNS LIST
[0161] 1: base material film, 2: tacky adhesive layer, 3: cured
product of film-shaped adhesive, 3A: adhesive layer, 3P:
film-shaped adhesive, 8: dicing/die-bonding integrated film, 20:
adhesive-attached semiconductor element, 100: semiconductor device,
W: semiconductor wafer.
* * * * *