U.S. patent application number 17/307596 was filed with the patent office on 2021-08-19 for radiation-hardened d flip-flop circuit.
The applicant listed for this patent is BAE Systems Information and Electronic Systems Integration Inc.. Invention is credited to David Bostedo, Landon J. Caley, Nicholas J. Chiolino, Patrick Fleming, Bin Li, David D. Moser.
Application Number | 20210257999 17/307596 |
Document ID | / |
Family ID | 1000005556851 |
Filed Date | 2021-08-19 |
United States Patent
Application |
20210257999 |
Kind Code |
A1 |
Li; Bin ; et al. |
August 19, 2021 |
RADIATION-HARDENED D FLIP-FLOP CIRCUIT
Abstract
A flip-flop and latch circuit is disclosed. The circuit includes
a single-input inverter, a dual-input inverter, a single-input
tri-state inverter, a dual-input tri-state inverter, and two
single-event transient (SET) filters. The single-input tri-state
inverter receives an input signal D. The dual-input tri-state
inverter includes a first input, a second input and an output,
wherein the first input receives output signals from the dual-input
inverter and the second input receives output signals from the
dual-input inverter via the first SET filter. The output of the
dual-input tri-state inverter sends output signals to a first input
of the dual-input inverter and a second input of the dual-input
inverter via the second SET filter. The single-input inverter
receives inputs from the dual-input inverter to provide an output
signal Q for the circuit
Inventors: |
Li; Bin; (Chantilly, VA)
; Bostedo; David; (Fairfax, VA) ; Caley; Landon
J.; (Fredricksburg, VA) ; Chiolino; Nicholas J.;
(Fayetteville, AR) ; Fleming; Patrick; (Redondo
Beach, CA) ; Moser; David D.; (Haymarket,
VA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
BAE Systems Information and Electronic Systems Integration
Inc. |
Nashua |
NH |
US |
|
|
Family ID: |
1000005556851 |
Appl. No.: |
17/307596 |
Filed: |
May 4, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16076530 |
Aug 8, 2018 |
10998890 |
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PCT/US17/69105 |
Dec 29, 2017 |
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17307596 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H03K 3/356069 20130101;
H03K 3/35625 20130101; H03K 19/0033 20130101 |
International
Class: |
H03K 3/3562 20060101
H03K003/3562; H03K 19/003 20060101 H03K019/003 |
Claims
1. A latch circuit comprising: a single-input tri-state inverter
for receiving an input D; a dual-input inverter; a first and second
single-event transient (SET) filters; a dual-input tri-state
inverter includes a first input for receiving output signals from
the dual-input inverter, a second input for receiving output
signals from the dual-input inverter via the first SET filter, and
an output for sending output signals to a first input of the
dual-input inverter and to a second input of the dual-input
inverter via the second SET filter; and a single-input inverter for
receiving inputs from the dual-input inverter to provide an output
Q for the latch circuit.
2. The latch circuit of claim 1, wherein the dual-input inverter
includes a p-channel transistor and an n-channel transistor
connected in series between power and ground.
3. The latch circuit of claim 1, wherein the dual-input inverter
includes two p-channel transistor and two n-channel transistors
connected in series between power and ground.
4. The latch circuit of claim 1, wherein the dual-input tri-state
inverter includes a dual-input inverter and a transmission
gate.
5. The latch circuit of claim 1, wherein the dual-input tri-state
inverter includes two p-channel transistors and two n-channel
transistors connected in series between power and ground.
6. The latch circuit of claim 1, wherein the first SET filter
includes two inverters connected in series and a capacitor
connected between the two inverters.
7. The latch circuit of claim 1, wherein the second SET filter
includes two inverters connected in series and a capacitor
connected between the two inverters.
8. A radiation-hardened latch, comprising: a single-input tri-state
inverter for receiving an input D; a dual-input inverter; a first
and second single-event transient (SET) filters; a dual-input
tri-state inverter includes a first input for receiving output
signals from the dual-input inverter, a second input for receiving
output signals from the dual-input inverter via the first SET
filter, and an output for sending output signals to a first input
of the dual-input inverter and to a second input of the dual-input
inverter via the second SET filter; and a single-input inverter for
receiving inputs from the dual-input inverter to provide an output
Q for the radiation-hardened latch.
9. The radiation-hardened latch of claim 8, further comprising a
clock signal (CLK) tied to the single tri-state inverter, wherein
the input D enters the single-input tri-state inverter when the
clock signal CLK goes to a logical low.
10. The radiation-hardened latch of claim 8, wherein the output
signals from the dual-input inverter only changes state when
signals at both the first input and the second input of the
dual-input inverter are the same.
11. The radiation-hardened latch of claim 8, wherein the output
signals from the dual-input inverter goes simultaneously to the
single-input inverter and to another temporal filter formed by the
dual-input tri-state inverter and the first SET filter.
12. The radiation-hardened latch of claim 8, wherein the dual input
inverter and the second SET filter form a temporal filter.
13. The radiation-hardened latch of claim 8, wherein the dual input
inverter and the second SET filter form a first temporal filter,
and the dual-input tri-state inverter and the first SET filter form
a second temporal filter.
14. The radiation-hardened latch of claim 13, wherein the first
temporal filter and second temporal filter hold the input data D
when the clock signal CLK goes to a logical high.
15. The radiation-hardened latch of claim 8, wherein the dual-input
inverter includes a p-channel transistor and an n-channel
transistor connected in series between power and ground.
16. The radiation-hardened latch of claim 8, wherein the dual-input
inverter includes two p-channel transistor and two n-channel
transistors connected in series between power and ground.
17. The radiation-hardened latch of claim 8, wherein the dual-input
tri-state inverter includes a dual-input inverter and a
transmission gate.
18. The radiation-hardened latch of claim 8, wherein the dual-input
tri-state inverter includes two p-channel transistors and two
n-channel transistors connected in series between power and
ground.
19. The radiation-hardened latch of claim 8, wherein the first SET
filter includes two inverters connected in series and a capacitor
connected between the two inverters.
20. The radiation-hardened latch of claim 8, wherein the second SET
filter includes two inverters connected in series and a capacitor
connected between the two inverters.
Description
TECHNICAL FIELD
[0001] The present disclosure relates to electronic circuits in
general, and in particular to flip-flop and latch circuits. Still
more particularly, the present disclosure relates to a
radiation-hardened circuit.
BACKGROUND
[0002] A digital logic system typically includes combinational
circuits and sequential circuits. Combinational circuits are formed
of logic gates, the outputs of which are decided by current inputs.
Combinational circuits perform operations that are logically
characterized by Boolean expressions.
[0003] Sequential circuits include logic gates as well as storage
elements known as flip-flops and latches. The outputs of storage
elements are a function of current inputs and the states of the
storage elements based on the previous inputs. Thus, the outputs of
sequential circuits are the result of the current inputs as well as
the previous inputs, and the operations of sequential circuits are
decided by the internal states and a time sequence of inputs.
[0004] Many integrated circuit devices having digital logic
circuits are vulnerable to single-event upsets due to radiation,
and conventional flip-flop circuits and latches are no exceptions.
Additional measures can be added to conventional flip-flop circuits
and latches to make them more immune to single-event upsets, but a
huge amount of extra circuits and space are needed for the purpose
of providing sensitive nodes separation. A huge amount of extra
circuits, however, is not preferable for implementations on
aircraft and/or spacecraft, and definitely not acceptable at small
technology nodes because it will lead to circuits that consume more
power while taking much more silicon areas at the same time.
[0005] The present disclosure provides an improved
radiation-hardened flip-flop and latch circuit.
SUMMARY
[0006] In accordance with one embodiment of the present disclosure,
a latch circuit includes a single-input inverter, a dual-input
inverter, a single-input tri-state inverter, a dual-input tri-state
inverter, and two single-event transient (SET) filters. The
single-input tri-state inverter receives an input signal D. The
dual-input tri-state inverter includes a first input, a second
input and an output, wherein the first input receives output
signals from the dual-input inverter and the second input receives
output signals from the dual-input inverter via the first SET
filter. The output of the dual-input tri-state inverter sends
output signals to a first input of the dual-input inverter and a
second input of the dual-input inverter via the second SET filter.
The single-input inverter receives inputs from the dual-input
inverter to provide an output signal Q for the circuit.
[0007] The features and advantages described herein are not
all-inclusive and, in particular, many additional features and
advantages will be apparent to one of ordinary skill in the art in
view of the drawings, specification and claims. Moreover, it should
be noted that the language used in the specification has been
selected principally for readability and instructional purposes and
not to limit the scope of the inventive subject matter.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The invention itself, as well as its modes of use, further
objects, and advantages thereof, will best be understood by
reference to the following detailed description of an illustrative
embodiment when read in conjunction with the accompanying
drawings.
[0009] FIG. 1 is a schematic diagram of a D flip-flop circuit,
according to the prior art;
[0010] FIG. 2A is a block diagram of a radiation-hardened D
flip-flop circuit, in accordance with a first embodiment;
[0011] FIG. 2B is a block diagram of a radiation-hardened latch
circuit, in accordance with a second embodiment;
[0012] FIG. 3A is a schematic diagram of a dual-input inverter
within the D flip-flop circuits from FIGS. 2A-2B, in accordance
with a first embodiment;
[0013] FIG. 3B is a schematic diagram of a dual-input inverter
within the D flip-flop circuits from FIGS. 2A-2B, in accordance
with a second embodiment;
[0014] FIG. 4A is a schematic diagram of a dual input tri-state
inverter within the D flip-flop circuits from FIGS. 2A-2B, in
accordance with a first embodiment;
[0015] FIG. 4B is a schematic diagram of a dual input tri-state
inverter within the D flip-flop circuits from FIGS. 2A-2B, in
accordance with a second embodiment; and
[0016] FIG. 5 is a schematic diagram of a single-event transient
(SET) filter within the D flip-flop circuit from FIGS. 2A-2B, in
accordance with one embodiment.
DETAILED DESCRIPTION
[0017] Referring now to the drawings and in particular to FIG. 1,
there is illustrated a schematic diagram of a D flip-flop (DFF)
circuit, according to the prior art. As shown, a DFF circuit 10
includes a master latch 11 and a slave latch 12. Master latch 11
includes first and second clocked inverter stages 14-15 and a first
(unclocked) inverter INV1. First clocked inverter stage 14 includes
a p-channel clock switch SP1, a p-channel data device MP1, an
n-channel data device MN1, and an n-channel clock switch SN1, all
connected in series. Second clocked inverter stage 15 includes a
p-channel clock switch SP2, a p-channel data device MP2, an
n-channel data device MN2, and an n-channel clock switch SN2, all
connected in series. Similarly, slave latch 12 includes third and
fourth clocked inverter stages 16-17, having analogously configured
clock switches SP3, SN3, SP4, and SN4 as well as data devices MP3,
MN3, MP4, and MN4, along with a second (unclocked) inverter
INV2.
[0018] In-phase clock signals CLK and opposite-phase clock signals
CLK_B, which are generated by a clock source (not shown), can be
fed to DFF circuit 10. When clock signal CLK is low and clock
signal CLK_B is high, inverter stage 14 is turned on, and data
output pm of inverter stage 14 will be the opposite of its data
input D. Similarly, inverter stage 17 is turned on, and the data
output ss of inverter stage 17 will be the opposite of its data
input Q. When clock signal CLK is high and clock signal CLK_B is
low, inverter stages 14 and 17 will be turned off. On the other
hand, when clock signal CLK is high and clock signal CLK_B is low,
inverter stage 15 is turned on, and data output pm of inverter
stage 15 will be the opposite of its data input m. Similarly,
inverter stage 16 is turned on, and data output ss of inverter
stage 16 will be the opposite of its data input m. When clock
signal CLK is low and clock signal CLK_B is high, inverter stages
15 and 16 will be turned off.
[0019] During a first phase of a system clock signal, master latch
11 receives and latches an input signal D and, during the next
phase of the system clock signal, slave latch 12 receives an output
signal m from master latch 11 and presents an output signal Q,
while master latch 11 receives and latches the next value of input
signal D. The data output signals of inverter stages 14, 15 appear
at node pm. The data input signal of inverter stages 15, 16 is
provided by the data output signal of first inverter INV1 at node
m, which is the output of master latch 11 and the input of slave
latch 12. The data output signals of inverter stages 16 and 17
appear at node ss. The data input signal of inverter stage 17 is
provided by the data output signal of second inverter INV2 at node
Q, which is at the output of slave latch 12 and the output of DFF
circuit 10.
[0020] With reference now to FIG. 2A, there is illustrated a
schematic diagram of a radiation-hardened DFF circuit, in
accordance with a first embodiment. As shown, a radiation-hardened
DFF circuit 20 includes a master latch and a slave latch. The
master latch includes a single-input tri-state inverter 21, a
dual-input tri-state inverter 22, a dual-input inverter 23 and two
single-event transient (SET) filters 24-25. The slave latch
includes a single-input tri-state inverter 26, a dual-input
tri-state inverter 27, a dual-input inverter 28 and two SET filters
29-30. For the master latch, the outputs of tri-state inverters 21,
22 are connected to a first input of dual-input inverter 23 and a
second input of dual-input inverter 23 via SET filter 25. The
output of dual-input inverter 23 is connected to a first input of
dual-input tri-state inverter 22 and a second input of dual-input
tri-state inverter 22 via SET filter 24. The output of dual-input
inverter 23 is also connected to single-input tri-state inverter
26. For the slave latch, the outputs of tri-state inverters 26, 27
are connected to a first input of dual-input inverter 28 and a
second input of dual-input inverter 28 via SET filter 30. The
output of dual-input inverter 28 is connected to a first input of
dual-input tri-state inverter 27 and a second input of dual-input
tri-state inverter 27 via SET filter 29. Radiation-hardened DFF
circuit 20 receives an input D at single-input tri-state inverter
21 and provides an output T at dual-input inverter 23 along with an
output Q at dual-input inverter 28.
[0021] At the master latch side, when clock signal CLK goes to a
logical low, data at input D enters single-input tri-state inverter
21. The output of single-input tri-state inverter 21 is split into
two paths, one of them directly enters a first input of dual-input
inverter 23 while the other one enters a second input of dual-input
inverter 23 via SET filter 25. Dual-input inverter 23 and SET
filter 25 forms a temporal filter. The output of dual-input
inverter 23 only changes state when signals at both inputs of
dual-input inverter 23 are the same. Thus, certain width of
glitches from input D will be filtered out, depending on the
settings of SET filter 25. The output of dual-input inverter 23
goes to dual-input tri-state inverter 26 and to output T; and at
the same time, it also goes to another temporal filter formed by
dual-input tri state inverter 22 and set filter 24. Temporal
filters 24, 25 hold the data when clock signal CLK goes to a
logical high.
[0022] At the slave latch side, when clock signal CLK_B goes to a
logical low, output T from dual-input inverter 23 enters dual-input
tri-state inverter 26. The output of dual-input tri-state inverter
26 is split into two paths, one of them directly enters a first
input of dual-input inverter 28 while the other one enters a second
input of dual-input inverter 28 via SET filter 30. Dual-input
inverter 28 and SET filter 30 forms a temporal filter. The output
of dual-input inverter 28 only changes state when signals at both
inputs of dual-input inverter 28 are the same. The output of
dual-input inverter 28 goes to output Q, and at the same time, it
also goes to another temporal filter formed by dual-input tri-state
inverter 27 and SET filter 29. Temporal filters 29, 30 hold the
data when clock signal CLK_B goes to a logical high.
[0023] The master latch of radiation-hardened DFF circuit 20 in
FIG. 2A can be utilized separately without the slave latch. With
reference now to FIG. 2B, there is illustrated a schematic diagram
of a radiation-hardened latch circuit, in accordance with a second
embodiment. As shown, a radiation-hardened latch circuit 20'
includes single-input tri-state inverter 21, dual-input tri-state
inverter 22, dual-input inverter 23, SET filters 24-25 and
single-input inverter 26'. The outputs of tri-state inverters 21,
22 are connected to a first input of dual-input inverter 23 and a
second input of dual-input inverter 23 via SET filter 25. The
output of dual-input inverter 23 is connected to a first input of
dual-input tri-state inverter 22 and a second input of dual-input
tri-state inverter 22 via SET filter 24. The output of dual-input
inverter 23 is also connected to single-input inverter 26.
Radiation-hardened latch circuit 20' receives input D at
single-input tri-state inverter 21 and provides output Q at
single-input inverter 26'.
[0024] When clock signal CLK goes to a logical low, data at input D
enters single-input tri-state inverter 21. The output of dual-input
tri-state inverter 21 is split into two paths, one of them directly
enters a first input of dual-input inverter 23 while the other one
enters a second input of dual-input inverter 23 via SET filter 25.
Dual-input inverter 23 and SET filter 25 forms a temporal filter.
The output of dual-input inverter 23 only changes state when
signals at both inputs of dual-input inverter 23 are the same. The
output of dual-input inverter 23 goes to single-input inverter 26'
and to output Q, and at the same time, it also goes to another
temporal filter that is formed by dual-input tri-state inverter 22
and SET filter 24. Temporal filters 24, 25 hold the data when clock
signal CLK goes to a logical high.
[0025] Dual-input inverters 23 and 28 are substantially identical
from each other, so only dual-input inverter 23 will be further
described in details. Referring now to FIG. 3A, there is depicted a
schematic diagram of dual-input inverter 23, in accordance with a
first embodiment. As shown, dual-input inverter 23 includes a
p-channel transistor 31 and an n-channel transistor 32 connected in
series between Vdd and ground. After receiving an input A0 at
p-channel transistor 31 and an input A1 at n-channel transistor 32,
dual-input inverter 23 provides an output Z.
[0026] Referring now to FIG. 3B, there is depicted a schematic
diagram of dual-input inverter 23, in accordance with a second
embodiment. As shown, dual-input inverter 23' includes p-channel
transistors 33, 34 and n-channel transistors 35, 36 connected in
series between Vdd and ground. After receiving input signal A0 at
p-channel transistor 31 and n-channel transistor 36, and input
signal A1 at p-channel transistor 34 and n-channel transistor 35,
dual-input inverter 23' provides output signal Z. Dual-input
inverter 23' can be used as a dual-input tri-stable inverter as
well.
[0027] Dual-input tri-state inverters 22 and 27 are substantially
identical from each other, so only dual-input tri-state inverter 22
will be further described in details. With reference now to FIG.
4A, there is illustrated a schematic diagram of dual-input
tri-state inverter 22 from FIGS. 2A, 2B, in accordance with a first
embodiment. As shown, dual-input tri-state inverter 22 includes a
dual-input inverter 41 connected to a transmission gate 42.
Transmission gate 42 is clocked by in-phase clock signals CLK and
opposite phase clock signals CLK_B. After receiving input signals
A0, A1 at dual-input inverter 41, dual-input tri-state inverter 22
provides an output signal Z when CLK is at a logical high.
[0028] With reference now to FIG. 4B, there is illustrated a
schematic diagram of dual-input tri-state inverter 22 from FIGS.
2A, 2B, in accordance with a second embodiment. As shown,
dual-input tri-state inverter 22' includes p-channel transistors
43, 44 and n-channel transistors 45, 46 connected in series between
Vdd and ground. N-channel transistor 45 is clocked by in-phase
clock signals CLK, p-channel transistor 44 is clocked by opposite
phase clock signals CLK_B. After receiving input signal A0 at
p-channel transistor 43 and input signal A1 at p-channel transistor
46, tri-state inverter 22' provides output signal Z when CLK is at
a logical high.
[0029] SET filters 24-25 and 29-30 are substantially identical from
each other, so only SET filter 24 will be further described in
details. Referring now to FIG. 5, there is depicted a schematic
diagram of SET filter 24 within DFF circuit 20 from FIG. 2A and DFF
circuit 20' from FIG. 2B, in accordance with one embodiment. As
shown, SET filter 24 includes single-input inverters 51, 52
connected in series and a capacitor 53 connected the node between
single-input inverters 51 and 52 to ground. According to one
embodiment, in order to meet certain reliability requirements, the
delays of single-input inverters 51, 52 should not have an edge
longer than approximately 240 ps. After receiving signal at input A
at single-input inverter 51, SET filter 24 provides a signal at
output Z. With capacitor 53, the signal from input A to output Z is
delayed. The delay time of SET filters 24-25 and 29-30 should be
chosen to be the glitch of SET.
[0030] As has been described, the present disclosure provides an
improved radiation-hardened DFF and latch circuit. The DFF circuit
includes four temporal filters whereas the latch contains two,
transistors that are optimally sized, and a layout requirement to
couple logically contrary transistors while separating logically
consistent transistors. The temporal filter formed by a SET filter
and a dual-path inverter will reject any SET glitch that is equal
to or less than the delay time of the SET filter, mainly because
the output of the dual-path inverter does not change the state
unless both inputs are the same. The SET filtering on internal
latch and demonstrated multiple-node charge cancellation technique
can increase radiation hardening without using redundant circuits
and separation space that requires a significantly large amount of
silicon area. The improved circuit minimizes the area penalty while
providing enough radiation hardness to meet error rate targets.
[0031] While the invention has been particularly shown and
described with reference to a preferred embodiment, it will be
understood by those skilled in the art that various changes in form
and detail may be made therein without departing from the spirit
and scope of the invention.
* * * * *