U.S. patent application number 17/220343 was filed with the patent office on 2021-07-22 for optoelectronic system.
The applicant listed for this patent is EPISTAR CORPORATION. Invention is credited to Cheng-Nan HAN, Steve Meng-Yuan HONG, Min-Hsun HSIEH, Tsung-Xian LEE, Hsin-Mao LIU.
Application Number | 20210226101 17/220343 |
Document ID | / |
Family ID | 1000005493299 |
Filed Date | 2021-07-22 |
United States Patent
Application |
20210226101 |
Kind Code |
A1 |
HSIEH; Min-Hsun ; et
al. |
July 22, 2021 |
OPTOELECTRONIC SYSTEM
Abstract
An embodiment of the invention discloses an optoelectronic
system comprising a plurality of optoelectronic elements, wherein
each of the plurality of optoelectronic elements comprises a
semiconductor epitaxial layer, a first electrode, a second
electrode, a top surface, a bottom surface, and a plurality of
lateral surfaces arranged between the top surface and the bottom
surface; a layer covering the plurality of lateral surfaces and
comprising a side surface; and a reflecting structure having a
shape of pyramid, formed between two adjacent optoelectronic
elements of the plurality of optoelectronic elements and
electrically separated from the plurality of optoelectronic
elements, wherein the reflecting structure is configured to reflect
light from the two adjacent optoelectronic elements upwards to
leave the optoelectronic system.
Inventors: |
HSIEH; Min-Hsun; (Hsinchu,
TW) ; HAN; Cheng-Nan; (Hsinchu, TW) ; HONG;
Steve Meng-Yuan; (Hsinchu, TW) ; LIU; Hsin-Mao;
(Hsinchu, TW) ; LEE; Tsung-Xian; (Hsinchu,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EPISTAR CORPORATION |
Hsinchu |
|
TW |
|
|
Family ID: |
1000005493299 |
Appl. No.: |
17/220343 |
Filed: |
April 1, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15657399 |
Jul 24, 2017 |
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17220343 |
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14657975 |
Mar 13, 2015 |
9748449 |
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15657399 |
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|
12840848 |
Jul 21, 2010 |
8999736 |
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14657975 |
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11160588 |
Jun 29, 2005 |
7928455 |
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12840848 |
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10604245 |
Jul 4, 2003 |
6987287 |
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11160588 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2924/01014
20130101; H01L 24/49 20130101; H01L 24/24 20130101; H01L 2224/24137
20130101; H01L 2924/12044 20130101; H01L 2224/48091 20130101; H01L
2924/01031 20130101; H01L 2224/04105 20130101; H01L 2924/12042
20130101; H01L 2924/01079 20130101; H01L 25/0756 20130101; H01L
2924/01028 20130101; H01L 24/96 20130101; H01L 2224/45144 20130101;
H01L 2924/01047 20130101; H01L 33/486 20130101; H01L 2924/01005
20130101; H01L 33/56 20130101; H01L 2924/19042 20130101; H01L
2924/19041 20130101; H01L 24/45 20130101; H01L 2224/92 20130101;
H01L 2924/12041 20130101; H01L 2924/01049 20130101; H01L 33/507
20130101; H01L 33/504 20130101; H01L 2924/01082 20130101; H01L
33/508 20130101; H01L 2924/01033 20130101; H01L 2924/01094
20130101; H01L 2224/96 20130101; H01L 2924/09701 20130101; H01L
2924/10349 20130101; H01L 2924/14 20130101; H01L 2924/014 20130101;
H01L 2924/01029 20130101; H01L 2224/12105 20130101; H01L 33/0093
20200501; H01L 2224/45124 20130101; H01L 2224/82 20130101; H01L
2924/01006 20130101; H01L 2224/4918 20130101; H01L 2924/01015
20130101; H01L 25/0753 20130101; H01L 2924/10329 20130101; H01L
2924/01013 20130101; H01L 21/6835 20130101; H01L 2924/0103
20130101; H01L 2924/3025 20130101; H01L 2924/12043 20130101; H01L
2924/01007 20130101; H01L 33/385 20130101; H01L 2224/48137
20130101; H01L 24/82 20130101; H01L 33/405 20130101; H01L
2924/01078 20130101 |
International
Class: |
H01L 33/50 20060101
H01L033/50; H01L 21/683 20060101 H01L021/683; H01L 23/00 20060101
H01L023/00; H01L 33/38 20060101 H01L033/38; H01L 33/48 20060101
H01L033/48; H01L 33/56 20060101 H01L033/56 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 21, 2009 |
TW |
098124681 |
Dec 30, 2009 |
TW |
098146171 |
Claims
1. An optoelectronic system comprising: a plurality of
optoelectronic elements, wherein each of the plurality of
optoelectronic elements comprises a semiconductor epitaxial layer,
a first electrode, a second electrode, a top surface, a bottom
surface, and a plurality of lateral surfaces arranged between the
top surface and the bottom surface; a layer covering the plurality
of lateral surfaces and comprising a side surface; and a reflecting
structure having a shape of pyramid, formed between two adjacent
optoelectronic elements of the plurality of optoelectronic elements
and electrically separated from the plurality of optoelectronic
elements, wherein the reflecting structure is configured to reflect
light from the two adjacent optoelectronic elements upwards to
leave the optoelectronic system.
2. The optoelectronic system of claim 1, wherein the layer directly
contacts the plurality of lateral surfaces.
3. The optoelectronic system of claim 1, wherein the layer exposes
the first electrode.
4. The optoelectronic system of claim 1, wherein the reflecting
structure is formed in a triangular pyramid or a tetra pyramid.
5. The optoelectronic system of claim 1, wherein the plurality of
reflecting structures comprises a silicone, glass, quartz, ceramic
and metallic material.
6. The optoelectronic system of claim 1, further comprising a
substrate, and the plurality of optoelectronic elements and the
reflecting structures are arranged on the substrate.
7. The optoelectronic system of claim 1, wherein the layer
comprises a first portion surrounding the plurality of lateral
surfaces.
8. The optoelectronic system of claim 1, wherein the layer
comprises SiO.sub.x, SiN.sub.x or silicone.
9. The optoelectronic system of claim 7, wherein the first portion
comprises silicone.
10. The optoelectronic system of claim 1, wherein the pyramid has a
base angle ranged between 20.about.70 degree.
11. The optoelectronic system of claim 6, wherein the substrate
comprises PCB.
12. The optoelectronic system of claim 1, further comprising a
submount which the optoelectronic element is bonded to.
Description
REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation application of Ser. No.
15/657,399, filed on Jul. 24, 2017, which is a continuation
application of Ser. No. 14/657,975, filed on Mar. 13, 2015, which
is a continuation application of Ser. No. 12/840,848, filed on Jul.
21, 2010, now U.S. Pat. No. 8,999,736, which is a
continuation-in-part application of Ser. No. 11/160,588, filed on
Jun. 29, 2005, which is a continuation-in-part application of Ser.
No. 10/604,245, filed on Jul. 4, 2003, now U.S. Pat. No. 6,987,287
and claims the right of priority based on Taiwan application Ser.
No. 098124681, filed on Jul. 21, 2009, and Taiwan application Ser.
No. 098146171, filed on Dec. 30, 2009, and the content of which is
hereby incorporated by reference.
TECHNICAL FIELD
[0002] The application relates to an optoelectronic system, and
more particularly to an integrated optoelectronic system.
DESCRIPTION OF BACKGROUND ART
[0003] An optoelectronic element such as an LED (Light Emitting
Diode) package is usually made from a complicated bare-chip
packaging process. An optoelectronic system can be further built by
integrating the packaged optoelectronic element with other
electronic element such as capacitor, inductor, and/or
non-electronic element.
[0004] Similar to the trend of small and slim commercial electronic
product, the development of the optoelectronic element also enters
into an era of miniature package. One promising packaging design
for semiconductor and optoelectronic element is the Chip-Level
Package (CLP).
SUMMARY OF THE DISCLOSURE
[0005] An embodiment of the invention discloses an optoelectronic
system comprising a plurality of optoelectronic elements, wherein
each of the plurality of optoelectronic elements comprises a
semiconductor epitaxial layer, a first electrode, a second
electrode, a top surface, a bottom surface, and a plurality of
lateral surfaces arranged between the top surface and the bottom
surface; a layer covering the plurality of lateral surfaces and
comprising a side surface; and a reflecting structure having a
shape of pyramid, formed between two adjacent optoelectronic
elements of the plurality of optoelectronic elements and
electrically separated from the plurality of optoelectronic
elements, wherein the reflecting structure is configured to reflect
light from the two adjacent optoelectronic elements upwards to
leave the optoelectronic system.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] FIG. 1 illustrates a conventional LED package.
[0007] FIGS. 2A.about.2D illustrate steps of making an
optoelectronic system in accordance with an embodiment of the
present invention.
[0008] FIG. 3 illustrates an optoelectronic system in accordance
with an embodiment of the present invention.
[0009] FIG. 4 illustrates a system unit and a carrier in accordance
with an embodiment of the present invention.
[0010] FIG. 5 illustrates a system unit and a sub-carrier in
accordance with an embodiment of the present invention.
[0011] FIG. 6 illustrates electrical connections of system units in
an optoelectronic system in accordance with an embodiment of the
present invention.
[0012] FIG. 7 illustrates electrical connections of system units in
an optoelectronic system in accordance with another embodiment of
the present invention.
[0013] FIG. 8 illustrates electrical connections of system units in
an optoelectronic system in accordance with further embodiment of
the present invention.
[0014] FIGS. 9A.about.9D illustrate steps of making an
optoelectronic system in accordance with another embodiment of the
present invention.
[0015] FIG. 10 illustrates electrical connections of system units
in an optoelectronic system in accordance with an embodiment of the
present invention.
[0016] FIG. 11 illustrates sub-groups of an optoelectronic system
in accordance with an embodiment of the present invention.
[0017] FIG. 12 illustrates electrical connection infrastructures of
sub-groups in accordance with an embodiment of the present
invention.
[0018] FIG. 13 illustrates electrical connection infrastructure of
sub-groups in accordance with another embodiment of the present
invention.
[0019] FIG. 14 illustrates the dimensions of one system unit in
accordance with an embodiment of the present invention.
[0020] FIG. 15 illustrates a deployment of a wave conversion
material in an optoelectronic system in accordance with an
embodiment of the present invention.
[0021] FIG. 16 illustrates a deployment of a wave conversion
material in an optoelectronic system in accordance with another
embodiment of the present invention.
[0022] FIG. 17 illustrates a deployment of a wave conversion
material in an optoelectronic system in accordance with further
embodiment of the present invention.
[0023] FIG. 18 illustrates a deployment of a wave conversion
material in an optoelectronic system in accordance with one
embodiment of the present invention.
[0024] FIG. 19 illustrates a deployment of a wave conversion
material in an optoelectronic system in accordance with another
embodiment of the present invention.
[0025] FIG. 20 illustrates deployments of wave conversion materials
in an optoelectronic system in accordance with further embodiment
of the present invention.
[0026] FIG. 21 illustrates deployments of system units in an
optoelectronic system in accordance with further embodiment of the
present invention.
[0027] FIG. 22 illustrates deployments of optoelectronic elements
or system units in an optoelectronic system in accordance with one
embodiment of the present invention.
[0028] FIGS. 23A.about.23E illustrate steps of manufacturing a
structure in accordance with an embodiment of the present
invention.
[0029] FIGS. 24A.about.24G illustrate steps of manufacturing a
structure in accordance with another embodiment of the present
invention.
[0030] FIG. 24H shows a cross-sectional view of a chip in
accordance with another embodiment of the present invention.
[0031] FIGS. 25A and 25B illustrate structures in accordance with
one embodiment of the present invention.
[0032] FIG. 26 illustrates a structure in accordance with an
embodiment of the present invention.
[0033] FIG. 27 illustrates a structure in accordance with another
embodiment of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0034] The embodiments are described hereinafter in accompany with
drawings.
[0035] As shown in FIGS. 2A.about.2D, a method of making an
optoelectronic system 100 in accordance with an embodiment of the
present invention is disclosed and includes steps of deploying two
or more system units 30 on a carrier 10; confining the spatial
relation between the system units 30 by introducing a material 40;
separating the system units 30 from the carrier 10; and
establishing an electrical connection 60 between any two of the
system units. However, the sequence of performing the steps is not
limited to the aforementioned and can be freely adjusted according
to the actual manufacturing environment or conditions.
[0036] The optoelectronic system 100 in accordance with one
embodiment of the present invention includes two or more system
units 30 which are connected in a network of transmitting and/or
converting luminous energy and electric energy. The system unit 30
is a part of the network and provides luminous energy, electric
energy, or both. For example, the optoelectronic system 100 is
capable of receiving signal and/or electric energy to output
luminous energy, or receiving luminous energy to output electric
energy and/or signal. The optoelectronic system 100 can be used in
various fields such as illumination, display, image recognition,
image reproduction, power supply, data storage, and machining.
[0037] Specifically, the optoelectronic system 100 is an
integration, combination, and/or stack of the system units 30 which
have optoelectronic function(s) and can be LED, photodiode,
photoresistor, laser, infrared emitter, solar cell, and any
combination thereof. Moreover, the optoelectronic system 100 can
optionally include other non-optoelectronic system unit 30, such as
resister, capacitor, inductor, diode, and integrated circuit.
[0038] The carrier 10 is provided as a base for growing and/ore
supporting the system unit 30. The candidates for carrier material
include but not limited to Ge, GaAs, InP, sapphire, SiC, Si,
LiAlO.sub.2, ZnO, GaN, AlN, metal, glass, composite, diamond, CVD
diamond, and DLC (Diamond-Like Carbon).
[0039] In one embodiment of the present invention, the whole or
part of the main structure of one or more system units 30 is formed
on the carrier 10. Specifically, the carrier 10 is functioned as a
ground structure of the system unit 30. For example, one or more
system units 30 are formed on the carrier 10 by chemical
deposition, physical deposition, electroplating, synthesis, and/or
self-assembly. Moreover, other than the aforementioned methods,
cutting, grinding, polishing, photo-lithography, etching, and/or
thermal treatment can be optionally introduced to the steps of
forming the system unit 30.
[0040] The system unit 30 in accordance with one embodiment of the
present invention is an optoelectronic semiconductor structure
which is made by epitaxially growing semiconductor layers on a
growth substrate which is used as the carrier 10. Provided two or
more system units 30 are formed on a common substrate, the
adjoining system units 30 can be electrically and/or physically
separated by trench or insulating region. However, the electrical
layout of the system units 30 can be also formed by internal
connection, external connection, or both. Taiwan patents, No.
434917 and No. 1249148 are pertinent to the same and issued to the
assignee of present application, and the content of which is hereby
incorporated by reference.
[0041] Specifically, system unit 30 at least includes a first
conductivity layer, a conversion unit, and a second conductivity
layer. At least two parts of the first conductivity layer and the
second conductivity layer are two individual single layer or two
individual multiple layers ("multiple layers" means two or more
than two layers) having different electrical properties,
polarities, dopants or providing electrons and holes. If the first
conductivity layer and the second conductivity layer are composed
of semiconductor materials, whose electrical properties could be
composed of any two of p-type, n-type, and i-type. The conversion
unit disposed between the first conductivity layer and the second
conductivity layer is a region where the luminous energy and the
electrical energy can transfer or can be induced to transfer. The
system unit in which the electrical energy is transferred to the
light energy is such as a light-emitting diode, a liquid crystal
display, or an organic light-emitting diode; the one that the light
energy is transferred to the electrical energy is such as a solar
cell, or an optoelectronic diode.
[0042] The system unit 30 in accordance with another embodiment of
the present invention is an LED (light-emitting diode). The light
emission spectrum of the LED can be adjusted by changing the
physical or chemical arrangement of one semiconductor layer or more
semiconductor layers. The materials such as the series of aluminum
gallium indium phosphide (AlGaInP), the series of aluminum gallium
indium nitride (AlGaInN), the series of zinc oxide (ZnO) and so on
are commonly used. The conversion unit such as single
heterostructure (SH), double heterostructure (DH), double-side
double heterostructure (DDH), or multi-quantum well (MQW) are
usually formed. Besides, the wavelength of the emitting light could
also be adjusted by changing the number of the pairs of the quantum
well in the MQW structure.
[0043] In one embodiment of the present invention, one or more
system unites 30 are built up before being mounted on the carrier
10. In other words, the carrier 10 and the system unit 30 are
independent from each other before establishing connection.
Specifically, the carrier 10 is used to support the system unit 30.
For example, one or more system units 30 are mounted on the carrier
10 by means of glue, metal, pressure, and/or heat. Taiwan patents,
No. 311287, No. 456058, No. 474034 and No. 493286 are pertinent to
the same and issued to the assignee of present application, and the
content of which is hereby incorporated by reference. Moreover,
during establishing the connection, the system unit 30 can
automatically or manually be placed on the carrier 10.
[0044] As shown in FIG. 3, the finished or semi-finished
optoelectronic system 100 can be optionally further connected to an
external body. The external body can be connected to one or two
sides of the optoelectronic system 100. In several embodiments, the
optoelectronic system 100 is connected to the external body 10a by
one side of an electrical connection 60; the optoelectronic system
100 is connected to the external body 10b by another side opposite
to the electrical connection 60; the optoelectronic system 100 is
connected to the external body 10a by the side of the electrical
connection 60 and to the external body 10b by the side opposite to
the electrical connection 60. The connection of the optoelectronic
system 100 and the external body is not limited to above-mentioned,
but any surface of the optoelectronic system 100 can be connected
to a proper external body. The external body can be a specific
unit, component, device, system, composition, and any combination
thereof. For example, the external body is a substrate formed by
material as those of the carrier 10, a circuit integration, an
optoelectronic system, an active element, a passive element, a
circuit element integration, and/or a fixture.
[0045] In one embodiment of the present invention, a layer or
structure 20 is further formed between the system unit 30 and the
carrier 10, as shown in FIG. 4. The layer or structure 20 is
expected to develop a short-term or long-term connection between a
part or whole of the system unit 30 and the carrier 10. Herein,
"short-term" is used to indicate a time point by or on the time the
optoelectronic system 100 is made, delivered or unloaded;
"long-term" is used to indicate a time point after the time the
optoelectronic system 100 is made, delivered, or unloaded. In other
words, the system unit 30 and the carrier 10 are not necessary to
separate from each other. Specifically, the layer or structure 20
includes, for example, glue, alloy, semiconductor, adhesive tape,
metallic single-layer, metallic multi-layer, jig, or any
combination thereof. In addition, the layer or structure 20 possess
not only a function to form a connection but also an optional
function for reflecting, anti-reflecting, current-blocking,
diffusion-blocking, stress-release, heat-conduction, and/or
heat-insulation. For example, the layer or structure 20 includes a
reflecting surface, an upper inter-layer positioned between the
system unit 30 and the reflecting surface, and a lower inter-layer
positioned between the system unit 30 and the reflecting surface.
Except the reflecting function, one or both of the upper
inter-layer and the lower inter-layer may possess at least one of
the above-mentioned functions such as the function of connection,
diffusion-blocking.
[0046] In another embodiment of the present invention, the system
unit 30 and the material 40 can be further connected to a
sub-carrier 50, as shown in FIG. 5. The connection step may be
executed before or after any step of FIGS. 2A.about.2D. Preferably,
the connection step is executed after the material 40 is introduced
into the workflow, for example, after the steps of FIG. 2B, FIG.
2C, or FIG. 2D. Provided the sub-carrier 50 is connected to the
system unit 30 and the material 40 after the step of FIG. 2B, one
may obtain a much reliable semi-finished structure to be used in
following manufacturing steps. The sub-carrier 50 and the system
unit 30 can be connected with each other by using the method listed
in the description directed to FIG. 4, such as compression,
heating, or any combination thereof. Specifically, a connection
layer 50a is formed between the sub-carrier 50 and the system unit
30 to combine both.
[0047] In addition, the connection layer 50a may possess not only
the function of connection but also an optional function for
reflecting, anti-reflecting, current-blocking, diffusion-blocking,
stress-release, heat-conduction, and/or heat-insulation. It is not
necessary to add an additional element to achieve such function(s),
but by adjusting the composition, geometric shape, and/or process
method of the sub-carrier 50 can accomplish the same. For example,
a reflecting, refracting, scattering, concentrating, collimating,
and/or, shielding structure can be formed on at least one
light-exiting surface of the sub-carrier 50. The light-exiting
surface is a surface contacting with the system unit 30, the
material 40, and/or the environmental medium. Specifically, the
reflecting, refracting, scattering, concentrating, collimating,
and/or, shielding structure are/is, for example, at least one of a
mirror, regular concave and convex, irregular concave and convex,
high refraction index difference interface, photonic crystal,
concave lens, convex lens, Fresnel lens, and opaque surface.
[0048] FIG. 6 illustrates the electrical connections of at least
two system units 30 in the optoelectronic system 100 in accordance
with one embodiment of the present invention. The system unit 30
herein includes two electrodes oriented in the same direction.
Specifically, such system unit 30 is, for example, a light-emitting
diode, more specific, is a light-emitting diode formed on an
insulator, such as sapphire. In FIG. 6(a), two system units 30 are
coupled together in an anode-cathode connection by wire 60a. In
FIG. 6(b), two system units 30 are coupled together in an
anode-anode connection by wire 60a. In FIG. 6(c), two system units
30 are coupled in a cathode-cathode connection by wire 60a.
[0049] FIG. 7 illustrates the electrical connections of at least
two system units 30 in the optoelectronic system 100 in accordance
with another embodiment of the present invention. The detail can be
referred to the description of FIG. 6. However, in present
embodiment, the electrical connection between the system units 30
are built by an internal connection 60b which can be formed by
depositing metallic material on a separating zone 60b' formed on
predetermined areas of the system units 30.
[0050] FIG. 8 illustrates the electrical connections of at least
two system units 30 in the optoelectronic system 100 in accordance
with further embodiment of the present invention. In FIGS. 8(a) and
8(b), the electrodes of the system units 30 are configured or
extended to about the same elevation. Two system units 30 shown in
FIG. 8(a) are coupled in an anode-cathode connection by wire 60a or
internal connection 60b. Two system units 30 shown in FIG. 8(b) are
coupled together in any one of three type connections as shown of
the equivalent circuits by wire 60a or internal connection 60b. In
FIG. 8(c), two system units 30 shown in FIG. 8(b) are coupled to a
circuit carrier 60c as a part of an electrical network.
[0051] As shown in FIGS. 9A.about.9D, a method of manufacturing the
optoelectronic system 100 in accordance with another embodiment of
the present invention is described as follows. Two or more system
units 30 are firstly deployed on a carrier 10 and arranged to form
an electrical connection 60 on one side thereof; confining the
spatial relation between the system units 30 by introducing a
material 40; separating the system units 30 from the carrier 10;
and forming another one electrical connection 60 on another side.
However, the above-mentioned steps are not limited to be performed
or chosen in such sequence, and can be arranged according to the
actual manufacturing environments or conditions. In addition, the
electrical connections 60 on the two sides of the two system units
30 are not limited the quantity or position shown in the drawings,
the user may arrange or modify them according to the characteristic
of the circuit. Moreover, under no obvious contradiction, the other
embodiments can be referred by or used in present embodiment.
[0052] FIG. 10 illustrates the electrical connections of at least
two system units 30 in the optoelectronic system 100 in accordance
with one embodiment of the present invention. In FIG. 10(a), two
system units 30, which are oriented in the same direction, are
coupled together in a parallel connection by electrical connection
60. In FIG. 10(b), two system units 30, which are
reversely-oriented, are coupled together in an anti-parallel
connection by electrical connection 60. However, the system units
30, which are oriented in the same direction, can be also coupled
together in an anti-parallel connection by an applicable layout of
the electrical connection 60. In FIG. 12(c), two system units 30
are coupled to a circuit carrier 60c as a part of an electrical
network.
[0053] In one embodiment of the present invention, the system units
30, which are confined in the material 40, can be further divided
into sub-groups with equal or unequal quantity, as shown in FIG.
11. However, the quantity and layout of the system units 30 are
only illustrative, but not to limit the application of the present
invention. Without obvious contradiction, the system elements
disclosed in other embodiments can be introduced into the present
embodiment. Furthermore, the electrical connection among the system
units 30 of the sub-group can be referred to the other relevant
embodiments of the present invention. The method of forming the
sub-group can be chemical means, physical means, or the combination
thereof. The chemical means can be etching. The physical means can
be mechanical cutting, polishing, laser cutting, water jet, thermal
splitting, and/or ultrasonic vibration. The width of the material
40 between the neighboring system units 30 is preferably greater
than a working tolerance of the dividing method. For example, the
width of the material 40 between two sub-groups is set to be
greater than or about a blade thickness of a dicing saw used to cut
the material 40. In practice, the blade thickness of the dicing saw
ranges from few micrometers to few millimeters, such as 20
.mu.m.about.2 mm. The detail of dicing saw can be referred to the
web sites of dicing saw providers.
[0054] FIG. 12 illustrates the electrical connection of the
sub-group in accordance with one embodiment of the present
invention. However, the structures of system units in the drawing
are only illustrative, but not to limit embodiment of the present
invention. Without obvious contradiction, the system elements
disclosed in other embodiments can be introduced into the present
embodiment. In FIG. 12(a), the electrical connection 60b bridges
the separating zone 60b' and is settled on the electrode 301 of the
system unit 30 and the material 40. In FIG. 12(b), one end of the
electrical connection 60b is electrically connected to the
electrode 301 of the system unit 30 while the other end is directly
settled on the material 40. In FIG. 12(c), the electrical
connection 60b is electrically connected to the system unit 30
without passing the electrode 301, and is directly settled on the
material 40. In FIG. 12(d), the electrical connection 60b is
electrically connected to the system unit 30 without passing the
electrode 301 and bridged on the separating zone 60b' to settle on
the material 40.
[0055] As shown in FIG. 13, the optoelectronic system 100 in
accordance with an embodiment of the present invention includes
sub-groups constructed in two or more dimensions. The quantity and
the connecting mode of the system units in each sub-group can be
identical or different. For example, the sub-groups 100a and 100c
are stacked on the sub-group 100b, wherein the sub-group 100a
includes four system units 30; the sub-group 100b includes one
system unit 30; the sub-group 100c includes two system units 30.
The sub-groups can be electrically connected with each other by
solder, silver glue, or other suitable conductive material.
However, the sub-groups are not necessary to electrically connect
with each other, i.e. the sub-groups are simply aggregated
together. The structure or quantity of the system unit 30 in the
drawing is only illustrative, but not to limit to the embodiment of
the present invention. Under no obvious contradiction, the system
unit and the connecting mode of other embodiments can be introduced
to present embodiment.
[0056] FIG. 14(a) shows the width L2 of the sub-group and the width
L1 of the system nit 30. L1/L2 is defined as X, and
0.05.ltoreq.X.ltoreq.1, preferably, 0.1.ltoreq.X.ltoreq.0.2,
0.2.ltoreq.X.ltoreq.0.3, 0.3.ltoreq.X.ltoreq.0.4,
0.4.ltoreq.X.ltoreq.0.5, 0.5.ltoreq.X.ltoreq.0.6,
0.6.ltoreq.X.ltoreq.0.7, 0.8.ltoreq.X.ltoreq.0.9, and/or
0.9.ltoreq.X.ltoreq.1. Specifically, L1/L2=260/600, or 580/1000.
FIG. 14(b) illustrates a cross-sectional view of a sub-group in
accordance with an embodiment of the present invention, wherein the
contour of which is a trapezoid. The dimensional relation of the
trapezoid is listed as follows: L2>L1, L2>L3. One or more
system units 30 are positioned in the sub-group as shown in the
drawing, however, the position of the system unit relative to the
edge of the material 40 is not fixed, i.e. at least one edge of the
system unit 30 can be arranged to touch or reach beyond the edge of
the material 40. For example, the system unit 30 can be arranged to
approach, touch, or protrude the upper boundary 40a and/or the
lower boundary 40b of the material 40.
[0057] As shown in FIG. 15, in one embodiment, the light-emitting
system, sub-group, or system unit (herein collectively called
"light source") is integrated with a wave conversion material.
Specifically, the wave conversion material can be composed of a
material 40a, a material 40b, or a combination of materials 40a and
40b. The material 40a is, for example, phosphor powder, dye,
semiconductor, or ceramic powder. The material 40b is phosphor
bulk, sintered bulk, ceramic bulk, organic glue, or inorganic glue.
The material 40a can be integrated with the material 40, material
40b, or both in or after the above-mentioned manufacturing process
of the light source. For example, the phosphor powder is mixed with
the material 40 and then put on or filled in the system unit 30, or
the wave conversion material is boded to, dropped, screen-printed,
and/or deposited on the system unit 30. In FIG. 15(a), the material
40a, material 40b, or both of the materials 40a and 40b are
arranged in a light-exiting direction of the light source,
preferably, on the light source. In FIG. 15(b), the material 40a is
mixed with the material 40. In FIG. 15(c), the materials 40a and
40b are arranged as a combination of FIGS. 15(a) and 15(b). In FIG.
15(d), the material 40a, material 40b, or the combination of the
materials 40a and 40b are arranged in a light-exiting direction of
the light source, but not contacting with the light source,
preferably, contacting with the material 40.
[0058] As shown in FIG. 16, the light-emitting system, sub-group,
or the system unit (herein collectively called "light source")
emits blue light, and is covered by the wave conversion material.
The detail embodiment of the wave conversion material can be
referred to the description of FIG. 15. In FIG. 16(a), the wave
conversion material emits green light or yellow light. In FIG.
16(b), the wave conversion material emits red light or yellow
light. In FIG. 16(c), a region of the wave conversion material
emits yellow light; the other region thereof emits red light,
wherein the two regions do not overlap with each other. Preferably,
the area of yellow light is greater than that of red light. In FIG.
16(d), a region of the wave conversion material emits yellow light;
the other region thereof emits red light, wherein the two regions
overlap with each other. Preferably, the region of yellow light is
closer to the light source than the region of red light.
Specifically, in the above cases, the color lights are generated
from the corresponding phosphor powder or phosphor bulk which is
excited by blue light.
[0059] As shown in FIG. 17(a), a part or a number of the system
units in the light-emitting system or the sub-group emit blue
light, while the other part or a number of the system units emit
red light. The material 40 is mixed with red or yellow phosphor,
preferably, the quantity of the blue light system unit is less than
that of the red light system unit. For example, the quantity ratio
of blue light system unit to the red light system unit is N/1+N (N
belongs to a positive integer). Or the power ratio of the blue
light system unit to the red light system unit is N1/N2 (N1 and N2
N belong to positive integers). Preferably, the blue light system
unit has a greater power than the red light system unit. For
example, N1/N2=3.0/1.0, 2.5/1.0, 2.0/1.0, 1.5/1.0, or 1.1/1.0. As
shown in FIG. 17(b), the system unit 30 of the light-emitting
system, and/or the sub-group emits blue light, and the material 40
is mixed with red and yellow phosphor. Preferably, the red and
yellow phosphor powders are uniformly distributed in a
predetermined space of the material 40. However, the powders may be
also distributed in a random, gradient, dispersed, or staggered
configuration.
[0060] As shown in FIG. 18(a), a part of the system units in the
light-emitting system or the sub-group emit blue light, while the
other part emit red light. The materials 40 and 40b are mixed with
yellow phosphors having identical or different emitting spectrums.
As shown in FIG. 18(b), the effective or active system unit of the
light-emitting system or sub-group emit blue light; while the
materials 40 and 40b are mixed with red and yellow phosphor at a
proper ratio. In FIG. 18(c), the effective or active system unit of
the light-emitting system or sub-group emit blue light, while the
material 40 is mixed with yellow phosphor powder, and the material
40 is mixed with yellow phosphor powder, the material 40b is mixed
with the red phosphor powder.
[0061] As shown in FIG. 19(a), a part of the system units in the
light-emitting system or the sub-group emit blue light, while a
part of the system units emit red light; a part of the system units
emit green light. As shown in FIG. 19(b), a part of the system
units in the light-emitting system or the sub-group emit blue
light, while the other part emit red light. The material 40 is
arranged on the two parts of the system units and mixed with green
phosphor powder. As shown in FIG. 19(c), a part of the system units
in the light-emitting system or the sub-group emit blue light,
while the other part emit red light. The material 40 is arranged on
the blue light system units and mixed with green phosphor powder.
As shown in FIG. 19(d), a part of the system units in the
light-emitting system or the sub-group emit blue light, while the
other part emit red light. The material 40 is arranged on a part or
local area of the blue light system units and mixed with green
phosphor powder.
[0062] As shown in FIGS. 20(a).about.20(c), the effective or active
system unit in the light-emitting system or sub-group emit blue
light. In FIG. 20(a), an area of the material 40b is mixed with
green phosphor powder; another area of the material 40b is mixed
with red phosphor powder. Preferably, the area of green phosphor
powder is greater than that of red phosphor powder. In FIG. 20(b),
an area of the material 40b is mixed with green phosphor powder;
another area of the material 40b is mixed with red phosphor powder.
The two areas are overlapped with each other. Preferably, the area
emitting shorter wavelength is closer to the system unit than the
area emitting longer wave length. In FIG. 20(c), the material 40b
is mixed with red and yellow phosphor powder. In FIG. 20(d), the
effective or active system units in the light-emitting system or
sub-group emit invisible radiation, such as UV light. The materials
40b respectively mixed with blue, green, and red phosphor powder
are arranged on the system unit. The areas of the tree parts can be
adjusted according to the efficiency, decay, and/or thickness of
the phosphor powders.
[0063] In above-mentioned or following embodiments, cool white
light can be formed by mixture of the blue light and suitable
yellow light; warm white light can be formed by the mixture of blue
light and suitable yellow light and red light. The power ratio of
blue light to red light is about 2:1.about.5:1, for example, 2.5:1,
3:1, 3.5:1, 4:1, and 4.5:1. The power ratio of green light to
yellow light is about 1:4. However, the scale and the arrangement
of the materials 40 and 40b in the drawing are only for
illustration, but not to limit the embodiment of the present
invention. In addition, the material 40, the material 40b, or both
can further cover the system unit which the phosphor powder is not
disposed in the light path thereof. The material 40 and/or the
material 40b may be integrated with phosphor bulk, sintered bulk,
ceramic bulk, dye, or the combination thereof.
[0064] Furthermore, the optoelectronic system or sub-group includes
not only system unit 30 which emits light but also one or more ICs
which can be used to control the a part or whole of the system unit
30 or as a rely circuit of a part or whole of the system unit 30,
as shown in FIG. 21(a). In addition to the ICs, the optoelectronic
system or sub-group can be further connected to a system unit 30'.
In one embodiment, the system unit 30' is a power supply system,
such as chemical battery, solar cell, and fuel cell. In another
embodiment, the system unit 30' is a transformer, a frequency
conversion system, and a regulator. Specifically, the system unit
30' is a SWMP (Switched Mode Power Supply), and/or high frequency
transformer.
[0065] FIGS. 22(a).about.22(f) illustrate the configurations of
optoelectronic system or sub-group. Wherein, the system unit 30 is
not limited to one emits light but can be one does not emit
light.
[0066] As shown in FIG. 23A, a method of making the optoelectronic
system in accordance with one embodiment of the present invention
is disclosed. Firstly, a carrier 10 (also called "temporary
substrate" in present embodiment) is provided. A layer or structure
20 (also called "first connecting layer"), which has adhesive upper
and lower surfaces, is formed on the temporary substrate 10 by spin
coating, vapor deposition, or printing. Two or more unpackaged
system units 30 (also called "optoelectronic element") are placed
on and connected to the first connecting layer 20 by a pick &
place system. A number of trenches 304 are formed between the
optoelectronic elements 30. The precision of placing the
optoelectronic elements 30 is governed by the pick & place
system, for example, the tolerance is not greater than 15 .mu.m.
The optoelectronic element is a light-emitting diode in the
embodiment. The structure of the light-emitting diode includes a
substrate 303, a semiconductor epitaxial layer 302 formed on the
substrate 303, and at least one electrode 301. The semiconductor
epitaxial layer 302 includes a first conductivity semiconductor
layer, an active layer, and a second conductivity semiconductor
layer. Furthermore, the substrate 303 can be optionally removed
during the manufacturing process in order to reduce the size of
system. In one preferable embodiment, at least one electrode 301 of
the optoelectronic element 30 is connected to the first connecting
layer 20. The optoelectronic elements 30 may emit lights having the
same or different wave length ranged from UV to infrared.
[0067] The material of the temporary substrate 10 is can be
silicone, glass, quartz, ceramic, alloy, or PCB. The material of
the first connecting layer 20 can be thermal release tape, UV
release tape, chemical release tape, heat resistant tape, and blue
tape. The material of the substrate 303 can be sapphire, SiC, ZnO,
GaN, or Si, glass, quartz, or ceramic. The first conductivity
semiconductor layer, the active layer, and the second conductivity
semiconductor layer may include at least one element selected from
the group consisting of Ga, Al, In, As, P, N, and Si.
[0068] As shown in FIG. 23B, a material 40 (also called "adhesive
glue") is further provided to fill the trenches 304 between the
optoelectronic elements 30, and cover the optoelectronic element 30
and the surface of the first connecting layer not covered by the
optoelectronic element. The adhesive glue 40 is formed by spin
coating, printing, or molding. The adhesive glue 40 may be a
elastic material, such as silicone rubber, silicone resin, elastic
PU, porous PU, acrylic rubber, or chip cutting glue, such as blue
tape or UV glue. In present embodiment, a polish process can be
further introduced to smooth the surface of the optoelectronic
element 30 and prevent the overflow or sink of the adhesive glue
40.
[0069] As shown in FIG. 23C, a sub-carrier 50 (also called
"permanent substrate") is provided to bond with optoelectronic
elements 30 where the adhesive glue 40 is applied. The bonding
process can be a hot pressing process. In a preferable embodiment,
the permanent substrate 50 is directly connected to the substrate
303 of the optoelectronic element 30. The material of the permanent
substrate 50 can be chosen from silicone, glass, quartz, alloy, or
PCB.
[0070] As shown in FIG. 23D, the temporary substrate 10, the first
connecting layer 20, and part of the adhesive glue 40 are removed
by laser lift-off, heating, and/or dissolving the pattern film. The
electrode 301 of the optoelectronic elements 30 and part of the
semiconductor epitaxial layer 302 are exposed.
[0071] As shown in FIG. 23E, the optoelectronic elements 30 are
coupled together in a series connection by forming electrical
connections 60 (specifically, are wires in present embodiment)
which are formed by lithography, and/or wire bonding. The material
of wire 60 can be Au, Al, or alloy thereof. The structure of the
electrical connection 60 can be a single layer or multi-layer.
Finally, an optoelectronic system is formed.
[0072] FIGS. 24A.about.24G illustrate a workflow in accordance with
another embodiment of the present invention. As shown in FIG. 24A,
a temporary substrate 10 is provided. A first connecting layer 20,
which has adhesive upper and lower surfaces, is formed on the
temporary substrate 10 by spin coating, vapor deposition, or
printing. Two or more unpackaged optoelectronic element 30 are
placed on and connected to the first connecting layer 20 by a pick
& place system. A number of trenches 304 are formed between the
optoelectronic elements 30. The precision of placing the
optoelectronic elements 30 is governed by the pick & place
system, for example, the tolerance is not greater than 15 .mu.m.
Wherein, the optoelectronic element is such as a light-emitting
diode including a substrate 303, a semiconductor epitaxial layer
302 formed on the substrate 303, and at least one electrode 301.
The semiconductor epitaxial layer 302 includes a first conductivity
semiconductor layer, an active layer, and a second conductivity
semiconductor layer. In one preferable embodiment, at least one
electrode 301 of the optoelectronic element 30 is connected to the
first connecting layer 20. The optoelectronic elements 30 may emit
lights having the same or different wave lengths ranged from UV to
infrared.
[0073] The material of the temporary substrate 10 can be silicone,
glass, quartz, ceramic, alloy, or PCB. The material of the first
connecting layer 20 can be thermal release tape, UV release tape,
chemical release tape, heat resistant tape, and blue tape. The
material of the substrate 303 can be sapphire, SiC, ZnO, GaN, or
Si, glass, quartz, or ceramic. The first conductivity semiconductor
layer, the active layer, and the second conductivity semiconductor
layer may include at least one element selected from the group
consisting of Ga, Al, In, As, P, N, and Si.
[0074] In addition, as shown in FIG. 24A, a phosphor material P can
be formed on the optoelectronic element 30. A uniform phosphor
material is better for providing stable white light and reducing
the divergence of the white lights from the optoelectronic elements
30. The phosphor material P can be formed by spin coating,
depositing, dropping, scraping, or molding. In another embodiment,
each of the optoelectronic elements 30 is covered by different
phosphor material. In further embodiment, the optoelectronic
elements 30 are optionally covered by different phosphor materials
to blend into various color light, i.e. not all of the
optoelectronic elements are covered by the phosphor material. For
example, three of the optoelectronic elements, which are blue
light-emitting diodes, are grouped together. The first one is
covered by red phosphor; the second one is covered by green
phosphor; the third one is not covered by any phosphor. The mixture
of blue light, red light, and green light brings out white
light.
[0075] As shown in FIG. 24B, an adhesive glue 40 is further
provided to fill the trenches 304 between the optoelectronic
elements 30, and cover the optoelectronic element 30 and the
surface of the first connecting layer 20 not covered by the
optoelectronic element 30. The adhesive glue 40 is formed by spin
coating, printing, or molding. The adhesive glue 40 may be an
elastic material, such as silicone rubber, silicone resin, elastic
PU, porous PU, acrylic rubber, or chip cutting glue, such as blue
tape or UV glue. In present embodiment, a polish process can be
further introduced to smooth the surface of the optoelectronic
element 30 and prevent the overflow or sink of the adhesive glue
40.
[0076] As shown in FIG. 24C, a permanent substrate 50 is provided
to bond with optoelectronic elements 30 where the adhesive glue 40
is applied. The bonding process can be a hot pressing process. In a
preferable embodiment, the permanent substrate 50 is directly
connected to the substrate 303 of the optoelectronic element 30.
The material of the permanent substrate 50 can be chosen from
silicone, glass, quartz, alloy, or PCB.
[0077] As shown in FIG. 24D, the temporary substrate 10, the first
connecting layer 20, and part of the adhesive glue 40 are removed
by laser lift-off, heating, and/or dissolving the pattern film. The
electrode 301 of the optoelectronic elements 30 and part of the
semiconductor epitaxial layer 302 are exposed.
[0078] As shown in FIG. 24E, a number of fan-out electrodes 305 are
formed on electrodes 301 of the optoelectronic element 30 by
electroplating or vapor deposition. The area of the fan-out
electrode 305 is greater than that of the electrode 301, and the
positioning tolerance for following packaging process is therefore
increased. The fan-out electrode 305, which has bigger area, is
beneficial to conduct heat to the package substrate such as metal
or PCB. The material of the fan-out electrode 305 is such as Au,
Al, or alloy or multi metallic structure.
[0079] As shown in FIGS. 24F.about.24G, the optoelectronic elements
30 are divided into chips. To form an optoelectronic system, each
chip can be boned to a sub-mount 600 by solder 601. The sub-mount
600 is such as a lead frame or large scale mounting substrate for
facilitating the circuit layout of the optoelectronic system and
heat dissipation.
[0080] Moreover, the embodiments of FIGS. 23 and 24 can be referred
to or combined with each other. For example, the optoelectronic
element 30 of FIG. 23 can be optionally covered by phosphor
material, or the step of FIG. 23D can be followed by the step of
FIG. 24E in order to introduce the steps of making the fan-out
electrode and dividing into chips. Similarly, the step of FIG. 24D
can be followed by the step of FIG. 23E in order to couple the
optoelectronic elements by wires. In one embodiment, the phosphor
material can comprises two kinds of phosphor powders, for example,
red and yellow phosphor. The red and yellow phosphor powders are
uniformly distributed in a random, gradient, dispersed, or
staggered configuration.
[0081] As shown in FIG. 24H, similar to FIG. 24G, the
optoelectronic element 30 can be optionally covered by phosphor
material. The phosphor material comprises a first phosphor layer
(P1) and a second phosphor layer (P2) overlapping the first
phosphor layer.
[0082] Furthermore, in another embodiment of the present invention
as shown in FIG. 25A, a permanent substrate 50 is firstly provided
to connect with a second connecting layer 70 and then bonded to the
optoelectronic elements 30 covered by the adhesive glue 40 by hot
press process. The material of the second connecting layer 70 is
such as SiO.sub.x, SiN.sub.x, and silicone. In further embodiment
of the present invention, which can be introduced after FIG. 23B or
FIG. 24B, as shown in FIG. 25B, the second connecting layer 70'
further includes channels 701 which is beneficial to increase the
heat dissipation and power wattage of the optoelectronic system.
The channels 701 are made by metallic material, such as Cu, Al, Ni,
or the alloy thereof. However, the channels 701 and the second
connecting layer 70' may be made by the same material, such as
sapphire, metal, and SiN.
[0083] In one embodiment of the present invention, which can be
introduced after FIG. 23B or FIG. 24B, as shown in FIG. 26, a
permanent substrate 50, which is connected with a first reflecting
layer 80 by an inter-layer (not shown), is provided to connect with
a second connecting layer 70 and then bond to the optoelectronic
elements 30 with the adhesive glue 40 by hot pressing process. The
material of the inter-layer is such as SiO.sub.x, SiN.sub.x, and
silicone. The first reflecting layer 80 is made by metallic
material, such as Ag, Al, or Pt, or a distributed Bragg reflector
(DBR) which is composed of dielectric materials or semiconductors.
In present embodiment, the use of the first reflecting layer 80 is
beneficial to increase the light extraction of the optoelectronic
system.
[0084] In further embodiment of the present invention, which is
introduced after FIG. 23B or FIG. 24B, as shown in FIG. 27, a
substrate 50' having a micro-pyramid array is provided to prevent
side-emitting loss and/or poor light extraction due to the
closeness of the optoelectronic elements 30. The substrate 50' with
micro-pyramid array can be made by etching the semiconductor. The
shape of the micro-pyramid 501 is such as cone, triangular pyramid,
and tetra pyramid. The base angle of the micro-pyramid 501 is
between 20.about.70 degree. In another embodiment, a second
reflecting layer with a higher refraction index can be formed on
the surface of the substrate 50'. The substrate 50' can be made by
silicone, glass, quartz, ceramic, alloy, or PCB. If the substrate
50' is made by a good conductive material, such as Cu, Al, Ceramic,
and Si, the reliability of the optoelectronic element can be
further improved. The substrate 50' is aligned with the
optoelectronic elements 30 by hot pressing process. In present
embodiment, the use of the substrate 50' with the micro-pyramid
array is beneficial to increase the light extraction by turning the
side-emitting light toward the vertical direction.
[0085] The foregoing description has been directed to the specific
embodiments of this invention. It will be apparent; however, that
other alternatives and modifications may be made to the embodiments
without escaping the spirit and scope of the invention.
* * * * *