U.S. patent application number 17/218609 was filed with the patent office on 2021-07-15 for method of manufacturing deposition mask, intermediate product to which deposition mask is allocated, and deposition mask.
This patent application is currently assigned to Dai Nippon Printing Co., Ltd.. The applicant listed for this patent is Dai Nippon Printing Co., Ltd.. Invention is credited to Chikao IKENAGA, Takanori MARUOKA, Sachiyo MATSUURA.
Application Number | 20210214837 17/218609 |
Document ID | / |
Family ID | 1000005492914 |
Filed Date | 2021-07-15 |
United States Patent
Application |
20210214837 |
Kind Code |
A1 |
IKENAGA; Chikao ; et
al. |
July 15, 2021 |
METHOD OF MANUFACTURING DEPOSITION MASK, INTERMEDIATE PRODUCT TO
WHICH DEPOSITION MASK IS ALLOCATED, AND DEPOSITION MASK
Abstract
A deposition mask in which deformation of long sides is
restrained is manufactured. A manufacturing method of a deposition
mask includes a step of preparing a metal plate; a processing step
of processing the metal plate into an intermediate product
comprising: a plurality of deposition mask portions each including
a pair of long sides and a pair of short sides, and having a
plurality of through-holes formed therein; and a support portion
that surrounds the plurality of deposition mask portions, and is
partially connected to the short sides of the plurality of
deposition mask portions; and a separation step of separating the
deposition mask portions from the support portion to obtain the
deposition mask. In the intermediate product, the long sides of the
deposition mask portions are not connected to the support
portion.
Inventors: |
IKENAGA; Chikao; (Tokyo,
JP) ; MARUOKA; Takanori; (Tokyo, JP) ;
MATSUURA; Sachiyo; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Dai Nippon Printing Co., Ltd. |
Tokyo |
|
JP |
|
|
Assignee: |
Dai Nippon Printing Co.,
Ltd.
Tokyo
JP
|
Family ID: |
1000005492914 |
Appl. No.: |
17/218609 |
Filed: |
March 31, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16372661 |
Apr 2, 2019 |
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17218609 |
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PCT/JP2017/032923 |
Sep 12, 2017 |
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16372661 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23F 1/02 20130101; C23C
14/24 20130101; C23C 14/243 20130101; H01L 51/56 20130101; C23C
14/04 20130101; C22C 38/08 20130101; C23C 14/042 20130101; B05C
21/005 20130101; C23C 14/12 20130101; B05D 1/32 20130101; H01L
51/50 20130101; H01L 51/0011 20130101; H05B 33/10 20130101; C23F
1/28 20130101 |
International
Class: |
C23C 14/04 20060101
C23C014/04; C23F 1/28 20060101 C23F001/28; H05B 33/10 20060101
H05B033/10; H01L 51/50 20060101 H01L051/50; C23F 1/02 20060101
C23F001/02; C23C 14/24 20060101 C23C014/24; C23C 14/12 20060101
C23C014/12; B05C 21/00 20060101 B05C021/00 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 7, 2016 |
JP |
2016-199420 |
Claims
1. An intermediate product having a plate-like shape and made of
metal, to which a deposition mask including a pair of long sides
and a pair of short sides, and having a plurality of through-holes
formed therein is allocated, the intermediate product comprising: a
deposition mask portion including a pair of long sides and a pair
of short sides, and having a plurality of through-holes formed
therein; and a support portion that surrounds the deposition mask
portion, and is partially connected to the short sides of the
deposition mask portion; wherein the long sides of the deposition
mask portion are not connected to the support portion.
2. An intermediate product having a plate-like shape and made of
metal, to which a deposition mask including a pair of long sides
and a pair of short sides, and having a plurality of through-holes
formed therein is allocated, the intermediate product comprising: a
deposition mask portion including a pair of long sides and a pair
of short sides, and having a plurality of through-holes formed
therein; and a support portion that surrounds the deposition mask
portion, and is partially connected to the deposition mask portion;
wherein a ratio of a part of the long side of the deposition mask
portion, which part is connected to the support portion, is smaller
than a ratio of a part of the short side of the deposition mask
portion, which part is connected to the support portion.
3. The intermediate product according to claim 2, wherein the ratio
of the part of the long side of the deposition mask portion, which
part is connected to the support portion, is calculated by dividing
a sum of widths of portions of the long side, which portions are
connected to the support portion, by a length of the long side, and
the ratio of the part of the short side of the deposition mask
portion, which part is connected to the support portion, is
calculated by dividing a sum of width of portions of the short
side, which portions are connected to the support portion, by a
length of the short side.
4. The intermediate product according to claim 2, wherein the ratio
of the part of the long side of the deposition mask portion, which
part is connected to the support portion, is calculated by dividing
the number of portions of the long side, which portions are
connected to the support portion, by a length of the long side, and
the ratio of the part of the short side of the deposition mask
portion, which part is connected to the support portion, is
calculated by dividing the number of portions of the short side,
which portions are connected to the support portion, by a length of
the short side.
5. The intermediate product according to claim 2, wherein an area
of the long side of the deposition mask portion, which area is
overlapped with the through-holes when the long side is seen along
a width direction of the intermediate product, is not connected to
the support portion.
6. The intermediate product according to claim 1, wherein the short
side of the deposition mask portion includes a plurality of
projections projecting toward the support portion so as to be
connected to the support portion.
7. The intermediate product according to claim 1, wherein
thicknesses of the deposition mask portion and the support portion
are not more than 50 .mu.m.
8. The intermediate product according to claim 1, wherein a
plurality of the deposition mask portions are aligned in a
direction intersecting with the long sides, and the support portion
does not exist between the long sides of the adjacent two
deposition mask portions.
9. A deposition mask comprising: a base member having a plate-like
shape and made of metal, the base member including a pair of long
sides and a pair of short sides; and a plurality of through-holes
formed in the base member; wherein a broken-out surface partially
exists on the short side of the base member, while no broken-out
surface exists on the long side of the base member.
10. A deposition mask comprising: a base member having a plate-like
shape and made of metal, the base member including a pair of long
sides and a pair of short sides; and a plurality of through-holes
formed in the base member; wherein a ratio of a broken-out surface
in the long side of the base member is smaller than a ratio of a
broken-out surface in the short side of the base member.
11. The deposition mask according to claim 10, wherein the ratio of
the broken-out surface in the long side of the base member is
calculated by dividing a sum of widths of the broken-out surfaces
present in the long side by a length of the long side, and the
ratio of the broken-out surface in the short side of the base
member is calculated by dividing a sum of widths of the broken-out
surfaces present in the short side by a length of the short
side.
12. The deposition mask according to claim 10, wherein the ratio of
the broken-out surface in the long side of the base member is
calculated by dividing the number of the broken-out surfaces
present in the long side by a length of the long side, and the
ratio of the broken-out surface in the short side of the base
member is calculated by dividing the number of the broken-out
surfaces present in the short side by a length of the short
side.
13. The deposition mask according to claim 10, wherein the
broken-out surface does not exist in an area that is overlapped
with the through-holes when the long side is seen along a width
direction of the deposition mask.
14. The deposition mask according to claim 9, wherein the short
side of the base member includes a plurality of projections each
projecting outward and having the broken-out surface.
15. The deposition mask according to claim 9, wherein a minimum
distance from the long side of the base member up to the
through-holes in a plane direction of the base member is not more
than 50 .mu.m.
16. The deposition mask according to claim 9, wherein the base
member has a first surface that faces a substrate to which a
deposition material having passed through the through-holes
adheres, and a second surface positioned oppositely to the first
surface, and the long side of the base member has a sectional shape
that projects most outside at a part meeting the first surface.
17. The deposition mask according to claim 9, wherein a thickness
of the base member is not more than 50 .mu.m.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 16/372,661, filed Apr. 2, 2019, which is a continuation
application of International Application No. PCT/JP2017/32923,
filed Sep. 12, 2017, which claims the benefit of Japanese Patent
Application No. 2016-199420, filed Oct. 7, 2016. The entire
contents of these applications are incorporated herein by
reference.
FIELD OF THE INVENTION
[0002] The embodiment of the disclosure relates to a deposition
mask and a manufacturing method of a deposition mask. In addition,
the embodiment of the disclosure relates to an intermediate product
for producing a deposition mask.
BACKGROUND OF THE INVENTION
[0003] A display device used in a portable device such as a smart
phone and a tablet PC is required to have high fineness, e.g., a
pixel density of not less than 400 ppi. In addition, there is
increasing demand that the portable device is applicable in the
full high-definitions reference. In this case, the pixel density of
the display device needs to be not less than 800 ppi, for
example.
[0004] An organic EL display device draws attention because of its
excellent responsibility and low power consumption. A known method
for forming pixels of an organic EL display device is a method
which uses a deposition mask including through-holes that are
arranged in a desired pattern, and forms pixels in the desired
pattern. To be specific, a deposition mask is firstly brought into
tight contact with a substrate for organic EL display device, and
then the substrate and the deposition mask in tight contact
therewith are put into a deposition apparatus so as to perform a
deposition step in which an organic material is deposited on the
substrate. Thus, pixels containing an organic material can be
formed on the substrate in a pattern corresponding to the pattern
of the through-holes of deposition mask.
[0005] In the deposition step, the deposition mask is fixed on a
frame having a predetermined rigidity. For example, when the
deposition mask has a pair of long sides and a pair of short sides,
the deposition mask is fixed on the frame, such that the deposition
mask is pulled in the long side direction. Thus, warp of the
deposition mask is prevented, while a dimensional precision and a
positional precision of pixels can be increased.
[0006] As disclosed in JP2015-55007A, for example, a method of
forming through-holes in a metal plate by etching using
photolithographic technique is known as a manufacturing method of a
deposition mask. For example, a first resist pattern is formed on a
first surface of a metal plate by an exposure/development process.
In addition, a second resist pattern is formed on a second surface
of the metal plate by an exposure/development process. Then, an
area of the first surface of the metal plate, which is not covered
with the resist pattern, is etched to form first openings in the
first surface of the metal plate. Thereafter, an area of the second
surface of the metal plate, which is not covered with the second
resist pattern is etched to form second openings in the second
surface of the metal plate. At this time, by etching the areas such
that each first opening and each second opening communicate with
each other, through-holes passing through the metal plate can be
formed.
[0007] As a method of efficiently manufacturing deposition masks,
there is known a method in which a metal plate having an area
corresponding to a plurality of deposition masks is prepared, then
a plurality of through-holes to be formed in the deposition masks
are formed in the metal plate, and thereafter the respective
deposition masks are taken out from the metal plate. For example,
in JP2015-55007A, deposition masks are taken out from a metal plate
by cutting the metal plate along break lines. In JP2015-55007A, the
break lines are perforated lines formed in the metal plate in a
pattern corresponding to the long sides and the short sides of
deposition the masks.
SUMMARY OF THE INVENTION
[0008] When a perforated line is broken, there is a possibility
that a deposition mask is pulled from a metal plate so that the
metal plate is deformed. For example, a long side of the deposition
mask may have deformation such as a wavy shape. As a result, a
dimensional precision and a positional precision of a deposition
material, which adheres to a substrate through a through-hole
positioned in the vicinity of the long side of the deposition mask,
are decreased.
[0009] The object of the embodiment of the disclosure is to provide
a manufacturing method of a deposition mask, which is capable of
effectively solving such a problem.
[0010] The first embodiment of the disclosure is a manufacturing
method of a deposition mask including a pair of long sides and a
pair of short sides, and having a plurality of through-holes formed
therein, the manufacturing method comprising: a step of preparing a
metal plate; a processing step of processing the metal plate into
an intermediate product comprising: a plurality of deposition mask
portions each including a pair of long sides and a pair of short
sides, and having a plurality of through-holes formed therein; and
a support portion that surrounds the plurality of deposition mask
portions, and is partially connected to the short sides of the
plurality of deposition mask portions; and a separation step of
separating the deposition mask portions from the support portion to
obtain the deposition mask; wherein, in the intermediate product,
the long sides of the deposition mask portions are not connected to
the support portion.
[0011] The second embodiment of the disclosure is a manufacturing
method of a deposition mask including a pair of long sides and a
pair of short sides, and having a plurality of through-holes formed
therein, the manufacturing method comprising: a step of preparing a
metal plate; a processing step of processing the metal plate into
an intermediate product comprising: a plurality of deposition mask
portions each including a pair of long sides and a pair of short
sides, and having a plurality of through-holes formed therein; and
a support portion that surrounds the plurality of deposition mask
portions, and is partially connected to the plurality of deposition
mask portions; and a separation step of separating the deposition
mask portions from the support portion to obtain the deposition
mask; wherein, in the intermediate product, a ratio of a part of
the long side of the deposition mask portion, which part is
connected to the support portion, is smaller than a ratio of a part
of the short side of the deposition mask portion, which part is
connected to the support portion.
[0012] The third embodiment of the disclosure is the manufacturing
method of a deposition mask according to the second embodiment of
the disclosure, the ratio of the part of the long side of the
deposition mask portion, which part is connected to the support
portion, may be calculated by dividing a sum of widths of portions
of the long side, which portions are connected to the support
portion, by a length of the long side, and the ratio of the part of
the short side of the deposition mask portion, which part is
connected to the support portion, may be calculated by dividing a
sum of widths of portions of the short side, which portions are
connected to the support portion, by a length of the short
side.
[0013] The fourth embodiment of the disclosure is the manufacturing
method of a deposition mask according to the second embodiment of
the disclosure, the ratio of the part of the long side of the
deposition mask portion, which part is connected to the support
portion, may be calculated by dividing the number of portions of
the long side, which portions are connected to the support portion,
by a length of the long side, and the ratio of the part of the
short side of the deposition mask portion, which part is connected
to the support portion, may be calculated by dividing the number of
portions of the short side, which portions are connected to the
support portion, by a length of the short side.
[0014] The fifth embodiment of the disclosure is the manufacturing
method of a deposition mask according to the second embodiment of
the disclosure, preferably, an area of the long side of the
deposition mask portion, which area is overlapped with the
through-holes when the long side is seen along a width direction of
the intermediate product, is not connected to the support portion.
More preferably, the entire area of the long side of the deposition
mask portion is not connected to the support portion.
[0015] The sixth embodiment of the disclosure is the manufacturing
method of a deposition mask according to any one of the first
embodiment to the fifth embodiment of the disclosure, in the
intermediate product, the short side of the deposition mask portion
may include a plurality of projections projecting toward the
support portion so as to be connected to the support portion.
[0016] The seventh embodiment of the disclosure is the
manufacturing method of a deposition mask according to any one of
the first embodiment to the sixth embodiment of the disclosure, in
the intermediate product, the plurality of deposition mask portions
may be aligned in a direction intersecting with the long sides, and
the support portion may not exist between the long sides of the
adjacent two deposition mask portions.
[0017] The eighth embodiment of the disclosure is the manufacturing
method of a deposition mask according to any one of the first
embodiment to the seventh embodiment of the disclosure, the
processing step may include a step of etching the metal plate to
form the through-holes, and a gap between the long side of the
deposition mask portion and the support portion.
[0018] The ninth embodiment of the disclosure is the manufacturing
method of a deposition mask according to any one of the first
embodiment to the eighth embodiment of the disclosure, the metal
plate may be processed while the metal plate is being conveyed
along a direction of the long side of the deposition mask
portion.
[0019] The tenth embodiment of the disclosure is the manufacturing
method of a deposition mask according to any one of the first
embodiment to the ninth embodiment of the disclosure, the
deposition mask portion may be separated from the support portion
by breaking the part of the short side of the deposition mask
portion, which part is connected to the support portion.
[0020] The eleventh embodiment of the disclosure is the
manufacturing method of a deposition mask according to any one of
the first embodiment to the tenth embodiment of the disclosure, a
thickness of the metal plate may be not more than 50 .mu.m.
[0021] The twelfth embodiment of the disclosure is an intermediate
product having a plate-like shape and made of metal, to which a
deposition mask including a pair of long sides and a pair of short
sides, and having a plurality of through-holes formed therein is
allocated, the intermediate product comprising: a deposition mask
portion including a pair of long sides and a pair of short sides,
and having a plurality of through-holes formed therein; and a
support portion that surrounds the deposition mask portion, and is
partially connected to the short sides of the deposition mask
portion; wherein the long sides of the deposition mask portion are
not connected to the support portion.
[0022] The thirteenth embodiment of the disclosure is an
intermediate product having a plate-like shape and made of metal,
to which a deposition mask including a pair of long sides and a
pair of short sides, and having a plurality of through-holes formed
therein is allocated, the intermediate product comprising: a
deposition mask portion including a pair of long sides and a pair
of short sides, and having a plurality of through-holes formed
therein; and a support portion that surrounds the deposition mask
portion, and is partially connected to the deposition mask portion;
wherein a ratio of a part of the long side of the deposition mask
portion, which part is connected to the support portion, is smaller
than a ratio of a part of the short side of the deposition mask
portion, which part is connected to the support portion.
[0023] The fourteenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to the thirteenth embodiment of the disclosure, the ratio
of the part of the long side of the deposition mask portion, which
part is connected to the support portion, may be calculated by
dividing a sum of widths of portions of the long side, which
portions are connected to the support portion, by a length of the
long side, and the ratio of the part of the short side of the
deposition mask portion, which part is connected to the support
portion, may be calculated by dividing a sum of width of portions
of the short side, which portions are connected to the support
portion, by a length of the short side.
[0024] The fifteenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to the thirteenth embodiment of the disclosure, the ratio
of the part of the long side of the deposition mask portion, which
part is connected to the support portion, may be calculated by
dividing the number of portions of the long side, which portions
are connected to the support portion, by a length of the long side,
and the ratio of the part of the short side of the deposition mask
portion, which part is connected to the support portion, may be
calculated by dividing the number of portions of the short side,
which portions are connected to the support portion, by a length of
the short side.
[0025] The sixteenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to the thirteenth embodiment of the disclosure,
preferably, an area of the long side of the deposition mask
portion, which area is overlapped with the through-holes when the
long side is seen along a width direction of the intermediate
product, is not connected to the support portion. More preferably,
the entire area of the long side of the deposition mask portion is
not connected to the support portion.
[0026] The seventeenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to any one of the twelfth embodiment to the sixteenth
embodiment, the short side of the deposition mask portion may
include a plurality of projections projecting toward the support
portion so as to be connected to the support portion.
[0027] The eighteenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to any one of the twelfth embodiment to the seventeenth
embodiment, thicknesses of the deposition mask portion and the
support portion may be not more than 50 .mu.m.
[0028] The nineteenth embodiment of the disclosure is the
intermediate product having a plate-like shape and made of metal
according to any one of the twelfth embodiment to the eighteenth
embodiment, a plurality of the deposition mask portions may be
aligned in a direction intersecting with the long sides, and the
support portion may not exist between the long sides of the
adjacent two deposition mask portions.
[0029] The twentieth embodiment of the disclosure is a deposition
mask comprising: a base member having a plate-like shape and made
of metal, the base member including a pair of long sides and a pair
of short sides; and a plurality of through-holes formed in the base
member; wherein a broken-out surface partially exists on the short
side of the base member, while no broken-out surface exists on the
long side of the base member.
[0030] The twenty-first embodiment of the disclosure is a
deposition mask comprising: a base member having a plate-like shape
and made of metal, the base member including a pair of long sides
and a pair of short sides; and a plurality of through-holes formed
in the base member; wherein a ratio of a broken-out surface in the
long side of the base member is smaller than a ratio of a
broken-out surface in the short side of the base member.
[0031] The twenty-second embodiment of the disclosure is the
deposition mask according to the twenty-first embodiment of the
disclosure, the ratio of the broken-out surface in the long side of
the base member may be calculated by dividing a sum of widths of
the broken-out surfaces present in the long side by a length of the
long side, and the ratio of the broken-out surface in the short
side of the base member may be calculated by dividing a sum of
widths of the broken-out surfaces present in the short side by a
length of the short side.
[0032] The twenty-third embodiment of the disclosure is the
deposition mask according to the twenty-first embodiment of the
disclosure, the ratio of the broken-out surface in the long side of
the base member may be calculated by dividing the number of the
broken-out surfaces present in the long side by a length of the
long side, and the ratio of the broken-out surface in the short
side of the base member may be calculated by dividing the number of
the broken-out surfaces present in the short side by a length of
the short side.
[0033] The twenty-fourth embodiment of the disclosure is the
deposition mask according to the twenty-first embodiment of the
disclosure, preferably, the broken-out surface does not exist in an
area that is overlapped with the through-holes when the long side
is seen along a width direction of the deposition mask. More
preferably, no broken-out surface exists over the entire area of
the long side of the base member.
[0034] The twenty-fifth embodiment of the disclosure is the
deposition mask according to any one of the twentieth embodiment to
the twenty-fourth embodiment of the disclosure, the short side of
the base member may include a plurality of projections each
projecting outward and form the broken-out surface.
[0035] The twenty-sixth embodiment of the disclosure is the
deposition mask according to any one of the twentieth embodiment to
the twenty-fifth embodiment of the disclosure, a minimum distance
from the long side of the base member up to the through-holes in a
plane direction of the base member may be not more than 50
.mu.M.
[0036] The twenty-seventh embodiment of the disclosure is the
deposition mask according to any one of the twentieth embodiment to
the twenty-sixth embodiment of the disclosure, the base member may
have a first surface that faces a substrate to which a deposition
material having passed through the through-holes adheres, and a
second surface positioned oppositely to the first surface, and the
long side of the base member may have a sectional shape that
projects most outside at a part meeting the first surface.
[0037] The twenty-eighth embodiment of the disclosure is the
deposition mask according to any one of the twentieth embodiment to
the twenty-seventh embodiment of the disclosure, a thickness of the
base member may be not more than 50 .mu.m.
[0038] According to the embodiment of the disclosure, a deposition
mask in which deformation of long sides is restrained can be
manufactured.
BRIEF DESCRIPTION OF THE DRAWINGS
[0039] FIG. 1 is a sectional view showing a deposition apparatus
comprising a deposition mask apparatus according to an embodiment
of the disclosure.
[0040] FIG. 2 is a sectional view showing an organic EL display
device manufactured by using the deposition mask apparatus shown in
FIG. 1.
[0041] FIG. 3 is a plan view showing the deposition mask apparatus
according to the embodiment of the disclosure.
[0042] FIG. 4 is a partial plan view showing effective areas of the
deposition mask shown in FIG. 3.
[0043] FIG. 5 is a sectional view along the V-V line in FIG. 4.
[0044] FIG. 6 is a sectional view along the VI-VI line in FIG.
4.
[0045] FIG. 7 is a sectional view along the VII-VII line in FIG.
4.
[0046] FIG. 8 is an enlarged sectional view showing the
through-holes shown in FIG. 5 and an area near thereto.
[0047] FIG. 9 is a schematic view for generally describing an
example of the manufacturing method of a deposition mask.
[0048] FIG. 10 is a view showing a step of forming a resist film on
a metal plate.
[0049] FIG. 11 is a view showing a step of bringing an exposure
mask into tight contact with the resist film.
[0050] FIG. 12 is a view showing a step of developing the resist
film.
[0051] FIG. 13 is a view showing a first-surface etching step.
[0052] FIG. 14 is a view showing a step of coating a first recess
with a resin.
[0053] FIG. 15 is a view showing a second-surface etching step.
[0054] FIG. 16 is a view showing the second-surface etching step
succeeding to FIG. 15.
[0055] FIG. 17 is a view showing a step of removing the resin and a
resist pattern from the metal plate.
[0056] FIG. 18 is a plan view showing an intermediate product
obtained by processing the metal plate.
[0057] FIG. 19 is an enlarged view showing an area of the
intermediate product of FIG. 18, which is surrounded by dotted
lines indicated by the symbol XIX.
[0058] FIG. 20 is a view showing a step of separating a deposition
mask portion from a support portion.
[0059] FIG. 21 is an enlarged plan view showing of a deposition
mask obtained from the intermediate product.
[0060] FIG. 22 is a side view showing a short side of the
deposition mask of FIG. 21, which is seen from a direction
indicated by the arrow XXII.
[0061] FIG. 23A is a view showing a result of an area of the
deposition mask of FIG. 21, which is surrounded by dotted lines
indicated by the symbol XXIII, the area being observed from the
first surface side.
[0062] FIG. 23B is a view showing a result of the area of the
deposition mask of FIG. 21, which is indicated by the symbol XXIII,
the area being observed from the second surface side.
[0063] FIG. 24A is a view showing a result of an area of the
deposition mask of FIG. 21, which is surrounded by dotted lines
indicated by the symbol XXIV, the area being observed from the
first surface side.
[0064] FIG. 24B is a view showing a result of an area of the
deposition mask of FIG. 21, which is surrounded by dotted lines
indicated by the symbol XXIV, the area being observed from the
second surface side.
[0065] FIG. 25A is a sectional view schematically showing an area
of the deposition mask of FIG. 21, which is surrounded by dotted
lines indicated by the symbol XXIII.
[0066] FIG. 25B is a view showing a modification example of a
sectional shape of a long side of the deposition mask.
[0067] FIG. 25C is a view showing a state in which the deposition
mask including the long side having the sectional shape shown in
FIG. 25A faces an organic EL substrate.
[0068] FIG. 25D is a view showing a state in which the deposition
mask including the long side having the sectional shape shown in
FIG. 25B faces an organic EL substrate.
[0069] FIG. 26 is a sectional view schematically showing an area of
the deposition mask of FIG. 21, which is surrounded by dotted lines
indicated by the symbol XXIV.
[0070] FIG. 27 is a plan view showing a modification example of the
intermediate product.
DETAILED DESCRIPTION OF THE INVENTION
[0071] An embodiment of the disclosure will be described herebelow
with reference to the drawings. In the drawings attached to the
specification, a scale dimension, an aspect ratio and so on are
changed and exaggerated from the actual ones, for the convenience
of easiness in illustration and understanding.
[0072] FIGS. 1 to 22 are views for describing an embodiment of the
disclosure. In the below embodiment and the modification example, a
manufacturing method of a deposition mask, which is used for
patterning an organic material on a substrate in a desired pattern
when an organic EL display device is manufactured, is described by
way of example. However, not limited thereto, the disclosure can be
applied to a manufacturing method for a deposition mask for various
uses.
[0073] In this specification, terms "plate", "sheet" and "film" are
not differentiated from one another based only on the difference of
terms. For example, the "plate" is a concept including a member
that can be referred to as sheet or film.
[0074] In addition, the term "plate plane (sheet plane, film
plane)" means a plane corresponding to a plane direction of a
plate-like (sheet-like, film-like) member as a target, when the
plate-like (sheet-like, film-like) member as a target is seen as a
whole in general. A normal direction used to the plate-like
(sheet-like, film-like) member means a normal direction with
respect to a plate plane (sheet surface, film surface) of the
member.
[0075] Further, in this specification, terms specifying shapes,
geometric conditions and their degrees, e.g., "parallel",
"orthogonal", "same", "similar" etc., are not limited to their
strict definitions, but construed to include a range capable of
exerting a similar function.
(Deposition Apparatus)
[0076] Firstly, a deposition apparatus 90 that performs a
deposition process in which a deposition material is deposited on
an object is described with reference to FIG. 1. As shown in FIG.
1, the deposition apparatus 90 includes therein a deposition source
(e.g., crucible 94), a heater 96, and a deposition mask apparatus
10. The deposition apparatus 90 further has exhaust means for
exhausting an inside of the deposition apparatus 90 into a vacuum
atmosphere. The crucible 94 accommodates a deposition material 98
such as an organic luminescence material. The heater 96 heats the
crucible 94 to evaporate the deposition material 98 under vacuum
atmosphere. The deposition mask apparatus 10 is disposed oppositely
to the crucible 94.
(Deposition Mask Apparatus)
[0077] Herebelow, the deposition mask apparatus 10 is described. As
shown in FIG. 1, the deposition mask apparatus 10 includes a
deposition mask 20, and a frame 15 supporting the deposition mask
20. The frame 15 supports the deposition mask 20 in such a manner
that the deposition mask 20 is tensed in its plane direction, in
order that the deposition mask 20 is not warped. As shown in FIG.
1, the deposition mask apparatus 10 is disposed in the deposition
apparatus 90 such that the deposition mask 20 faces a substrate to
which the deposition material 98 is to be deposited, such as an
organic EL substrate 92. In the description below, a surface of the
deposition mask 20, which is on the side of the organic EL
substrate 92, is referred to as a first surface 20a, and a surface
positioned oppositely to the first surface 20a is referred to as a
second surface 20b.
[0078] As shown in FIG. 1, the deposition mask apparatus 10 may
have a magnet 93 located on a surface of the organic EL substrate
93, which is disposed oppositely to the deposition mask 20. Due to
the provision of the magnet 93, the deposition mask 20 can be drawn
toward the magnet 93 by a magnetic force, so that the deposition
mask 20 can be brought into tight contact with the organic EL
substrate 92.
[0079] FIG. 3 is a plan view of the deposition mask apparatus 10,
seen from the side of the first surface 20a of the deposition mask
20. As shown in FIG. 3, the deposition mask apparatus 10 includes a
plurality of deposition masks 20. Each deposition mask 20 includes
a pair of long sides 26 and a pair of short sides 27, and has a
rectangular shape, for example. Each deposition mask 20 is fixed on
the frame 15 by spot welding, for example, at the pair of short
sides 27 or a portion near thereto.
[0080] The deposition mask 20 includes a base member having a
plate-like shape and made of metal, in which a plurality of
through-holes 25 passing through the deposition mask 20 are formed.
The deposition material 98, which has evaporated from the crucible
94 to reach the deposition mask apparatus 10, passes through the
through-holes 25 of the deposition mask 20 to adhere to the organic
EL substrate 92. Thus, the organic material 98 can be deposited on
the surface of the organic EL substrate 92 in a desired pattern
corresponding to the positions of the through-holes 25 of the
deposition mask.
[0081] FIG. 2 is a sectional view showing an organic EL display
device 100 manufactured by using the deposition apparatus of FIG.
1. The organic EL display device 100 includes the organic EL
substrate 92, and pixels containing the patterned deposition
material 98.
[0082] When colored display by a plurality of colors is desired,
the deposition apparatuses 90 provided with deposition masks
corresponding to respective colors are respectively prepared, and
the organic EL substrate 92 is put into the respective deposition
apparatuses 90 in sequence. Thus, for example an organic
luminescence material for red color, an organic luminescence
material for green color, and an organic luminescence material for
blue color can be deposited onto the organic EL substrate 92 in
sequence.
[0083] The deposition process is sometimes performed inside the
deposition apparatus 90 in a high-temperature atmosphere. Thus,
during the deposition process, the deposition masks 20, the frame
15 and the organic EL substrate 92, which are held inside the
deposition apparatus 90, are also heated. At this time, each of
deposition mask 20, the frame 15 and the organic EL substrate 92
develop dimensional change behaviors based on their respective
thermal expansion coefficients. In this case, when the thermal
expansion coefficients of the deposition mask 20, the frame 15 and
the organic EL substrate 92 largely differ from one another,
positioning displacement occurs because of the difference in
dimensional change. As a result, the dimensional precision and the
positional precision of the deposition material to be adhered to
the organic EL substrate 92 lower.
[0084] In order to avoid this problem, the thermal expansion
coefficients of the deposition mask 20 and the frame 15 are
preferably equivalent to the thermal expansion coefficient of the
organic EL substrate 92. For example, when a glass substrate is
used as the organic EL substrate 92, an iron alloy containing
nickel can be used as a main material of the deposition mask 20 and
the frame 15. For example, an iron alloy containing not less than
30% by mass and not more than 54% by mass of nickel can be used as
a material of the substrate constituting the deposition masks 20.
Concrete examples of an iron alloy containing nickel may be an
invar material containing not less than 34% by mass and not more
than 38% by mass of nickel, a super invar material containing
cobalt in addition to not less than 30% by mass and not more than
34% by mass of nickel, or a low thermal expansion Fe--Ni based
plated alloy containing not less than 38% by mass and not more than
54% by mass of nickel.
[0085] During the deposition step, if the deposition mask 20, the
frame 15 and the organic EL substrate 92 do not reach high
temperatures, it is not particularly necessary that the thermal
expansion coefficients of the deposition mask 20 and the frame 15
are equivalent to the thermal expansion coefficient of the organic
EL substrate 92. In this case, a material other than the
aforementioned iron alloy can be used as a material for forming the
deposition mask 20. For example, it is possible to use an iron
alloy other than the iron alloy containing nickel, such as an iron
alloy containing chrome. As an iron alloy containing chrome, an
iron alloy that is so-called stainless can be used, for example. In
addition, it is possible to use alloy other than an iron alloy,
such as nickel, or nickel-cobalt alloy.
(Deposition Mask)
[0086] Next, the deposition mask 20 is described in detail. As
shown in FIG. 3, the deposition mask 20 includes a pair of ear
portions (first ear portion 17a and second ear portion 17b) having
the pair of short sides 27 of the deposition mask, and an
intermediate portion located between the pair of ear portions 17a,
17b.
(Ear Portion)
[0087] Firstly, the ear portion 17a, 17b is described in detail.
The ear portion 17a, 17b is a part of the deposition mask 20, which
is fixed to the frame 15. In this embodiment, the ear portion 17a,
17b is integrally formed with the intermediate portion 18. However,
the ear portion 17a, 17b may be formed by a member different from
the intermediate portion 18. In this case, the ear portion 17a, 17b
is joined to the intermediate portion 18 by welding, for
example.
(Intermediate Portion)
[0088] Next, the intermediate portion 18 is described. The
intermediate portion 18 includes at least one effective area 22 in
which through-holes 25 extending from the first surface 20a to
reach the second surface 20b are formed, and a surrounding area 23
around the effective area 22. The effective area 22 is an area of
the deposition mask 20, which faces a display area of the organic
EL substrate 92.
[0089] In the example shown in FIG. 3, the intermediate portion 18
includes a plurality of effective areas 22 that are arranged at
predetermined intervals along the long sides 26 of the deposition
mask 20. One effective area 22 corresponds to a display area of one
organic EL display device 100. Thus, the deposition mask apparatus
10 shown in FIG. 1 enables a multifaceted deposition of the organic
EL display devices 100.
[0090] As shown in FIG. 3, the effective area 22 has, for example,
a profile of a substantially quadrangular shape in plan view, more
precisely, a substantially rectangular shape in plan view. Although
not shown, each effective area 22 can have profiles of different
shapes depending on a shape of the display area of the organic EL
substrate 92. For example, each effective area 22 may have a
circular profile.
[0091] Herebelow, the effective area 22 is described in detail.
FIG. 4 is an enlarged view showing the effective areas 22 from the
side of the second surface 20b of the deposition mask 20. As shown
in FIG. 4, in the illustrated example, the plurality of
through-holes 25 formed in each effective area 22 are arranged in
the effective area 22 at predetermined pitches along two directions
orthogonal to each other. An example of the through-hole 25 is
described in further detail with reference mainly to FIGS. 5 to 7.
FIGS. 5 to 7 are sectional views along the V-V direction to VII-VII
direction of the effective area 22 of FIG. 4.
[0092] As shown in FIGS. 5 to 7, the plurality of through-holes 25
pass through the deposition mask 20 from the first surface 20a,
which is one side along a normal direction N of the deposition mask
20, to the second surface 20b, which is the other side along the
normal direction N of the deposition mask 20. In the illustrated
example, as described in detail later, first recesses 30 are formed
by etching in the first surface 21a of the base member 21, which
serves as the one side in the normal direction N of the deposition
mask 20, and second recesses 35 are formed in the second surface
21b of the base member 21, which serves as the other side in the
normal direction N of the deposition mask 20. Each of the first
recesses 30 is connected to each of the second recesses 35, so that
the second recess 35 and the first recess 30 are formed to
communicate with each other. Each through-hole 25 is composed of
the second recess 35 and the first recess 30 connected to the
second recess 35.
[0093] As shown in FIGS. 5 to 7, an opening area of each second
recess 35, in a cross-section along a plate plane of the deposition
mask 20 at each position along the normal direction N of the
deposition mask, gradually decreases from the side of the second
surface 20b of the deposition mask 20 toward the side of the first
surface 20a thereof. Similarly, an opening area of each first
recess 30, in a cross-section along the plate plane of the
deposition mask 20 at each position along the normal direction N of
the deposition mask, gradually decreases from the side of the first
surface 20a of the deposition mask 20 toward the side of the second
surface 20b thereof.
[0094] As shown in FIGS. 5 to 7, a wall surface 31 of the first
recess 20 and a wall surface 36 of the second recess 35 are
connected via a circumferential connection portion 41. The
connection portion 41 is defined by a ridge line of a bulging part
where the wall surface 31 of the first recess 30, which is inclined
with respect to the normal direction N of the deposition mask 20,
and the wall surface 36 of the second recess 35, which is inclined
with respect to the normal direction of the deposition mask 20, are
merged with each other. The connection portion 41 defines a
through-portion 42 where an area of the through-hole 25 is minimum
in plan view of the deposition mask 20.
[0095] As shown in FIGS. 5 to 7, the adjacent two through-holes 25
in the other side surface along the normal direction N of the
deposition mask 20, i.e., in the first surface 20a of the
deposition mask 20, are spaced apart from each other along the
plate plane of the deposition mask 20. Namely, as in the
below-described manufacturing method, when the first recesses 30
are made by etching the base member 21 from the side of the first
surface 21a of the base member 21, which will correspond to the
first surface 20a of the deposition mask 20, the first surface 21a
of the base member 21 remains between the adjacent two first
recesses 30.
[0096] Similarly, as shown in FIGS. 5 and 7, the adjacent two
second recesses 35 may be spaced apart from each other along the
plate plane of the deposition mask 20, on the one side along the
normal direction of the deposition mask 20, i.e., on the side of
the second surface 20b of the deposition mask 20. Namely, the
second surface 21b of the base member 21 may remain between the
adjacent two second recesses 35. In the below description, this
portion of the effective area 22 of the second surface 21b of the
base member 21, which is not etched and thus remains, is also
referred to as a top portion 43. By producing the deposition mask
20 such that such a top portion 43 remains, the deposition mask 20
can have a sufficient strength. Thus, it can be prevented that the
deposition mask 20 is damaged during conveyance, for example.
However, when a width .beta. of the top portion 43 is too large,
there is a possibility that shadow occurs in the deposition step,
which lowers utilization efficiency of the deposition material 98.
Thus, the deposition mask 20 is preferably produced such that the
width .beta. of the top portion 43 is excessively large. For
example, the width .beta. of the top portion 43 is preferably not
more than 2 .mu.m. In general, the width .beta. of the top portion
43 varies depending on a direction along which the deposition mask
20 is severed. For example, the width .beta. of the top portion 43
shown in FIG. 5 and that of FIG. 7 may differ from each other. In
this case, the deposition mask 30 may be formed such that the width
.beta. of the top portion 43 is not more than 2 .mu.m, regardless
of a direction along which the deposition mask 20 is severed.
[0097] As shown in FIG. 6, the etching process may be performed
such that adjacent two first recesses 30 are connected to each
other, depending on their positions. Namely, there may be a part
where no second surface 21b of the base member 21 remains between
the adjacent two second recesses 35. In addition, although not
shown, the etching process may be performed such that adjacent two
second recesses 35 are connected over the whole area of the second
surface 21b.
[0098] When the deposition mask apparatus 10 is received in the
deposition apparatus 90 as shown in FIG. 1, the first surface 20a
of the deposition mask 20 faces the organic EL substrate 92, as
shown by the two-dot chain lines in FIG. 5, and the second surface
20b of the deposition mask 20 is located on the side of the
crucible 94 holding the deposition material 98. Thus, the
deposition material 98 adheres to the organic EL substrate 92
through the second recess 35 whose opening area gradually
decreases. As indicated by the arrow in FIG. 5 extending from the
second surface 20b toward the first surface 20a, the deposition
material 98 not only moves from the crucible 94 toward the organic
EL substrate 92 along the normal direction N of the organic EL
substrate 92, but also sometimes moves along a direction largely
inclined with respect to the normal direction N of the organic EL
substrate 92. At this time, when the thickness of the deposition
mask 20 is large, most of the diagonally moving deposition material
98 reaches the wall surface 36 of the second recess 35 to adhere
thereto, before the deposition material 98 passes through the
through-holes 25 to reach the organic EL substrate 92. Thus, in
order to improve utilization efficiency of the deposition material
98, it is considered to be preferable that the thickness t of the
deposition mask 20 is reduced so that heights of the wall surface
36 of the second recess 35 and the wall surface 31 of the first
recess 30 are reduced. Namely, it can be said that it is preferable
that a base member 21, which has the thickness t as small as
possible, as long as the strength of the deposition mask 20 is
ensured, is used as the base member 21 for constituting the
deposition mask 20. In consideration of this point, the thickness t
of the deposition mask 20 in this embodiment is preferably set to
be not more than 50 .mu.m, e.g., not less than 5 .mu.m and not more
than 50 .mu.m. The thickness t is a thickness of the peripheral
area 23, i.e., a thickness of a part of the deposition mask 20
where the first recess 30 and the second recess 35 are not formed.
Therefore, the thickness t can be said as a thickness of the base
member 21.
[0099] In FIG. 5, a minimum angle defined by a line L1, which
passes the connection portion 31 having the minimum opening area of
the through-hole 25 and another given position of the wall surface
36 of the second recess 35, with respect to the normal direction N
of the deposition mask 20 is represented by a symbol .theta.1. In
order that the diagonally moving deposition material 98 can be
caused to reach the organic EL substrate 92 with being caused to
reach the wall surface 36 as much as possible, it is advantageous
that the angle .theta.1 is increased. In order to increase the
angle .theta.1, it is effective to reduce the aforementioned width
.beta. of the top portion 43, as well as to reduce the thickness t
of the deposition mask 20.
[0100] In FIG. 7, the symbol a represents a width of a portion
(hereinafter also referred to as "rib portion") of the effective
area 22 of the first surface 21a of the base member 21, which is
not etched and thus remains. A width .alpha. of the rib portion and
a size r.sub.2 of the through-portion 42 are suitably determined
depending on a size of an organic EL display device and the number
of display pixels. For example, the width .alpha. of the rib
portion is not less than 5 .mu.m and not more than 40 .mu.m, and
the size r.sub.2 of the through-portion 42 is not less than 10
.mu.m and not more than 60 .mu.m.
[0101] Although not limited, the deposition mask 20 according to
this embodiment is particularly effective when an organic EL
display device having a pixel density of not less than 450 ppi is
produced. Herebelow, a size example of the deposition mask 20
required for producing an organic EL display device having such a
high pixel density is described. FIG. 8 is an enlarged sectional
view showing the through-hole 25 of the deposition mask 20 shown in
FIG. 5 and an area near thereto.
[0102] In FIG. 8, as parameters related to the shape of the
through-hole 25, a distance from the first surface 20a of the
deposition mask 20 up to the connection portion 41 thereof along
the normal direction N of the deposition mask 20, i.e., a height of
the wall surface 31 of the first recess 30 is represented by a
symbol r.sub.1. Further, a size of the first recess 30 in a part
where the first recess 35 is connected to the second recess 35,
i.e., a size of the through-portion 42 is represented by a symbol
r.sub.2. In addition, in FIG. 8, an angle that is defined by a line
L2, which connects the connection portion 41 and a distal edge of
the first recess 30 in the first surface 21a of the base member 21,
with respect to the normal direction N of the base member 21 is
represented by a symbol .theta.2.
[0103] When an organic EL display device having a pixel density of
not less than 450 ppi is produced, the size r.sub.2 of the
through-portion 42 is preferably set to be not less than 10 .mu.m
and not more than 60 .mu.m. Due to this size, it is possible to
provide the deposition mask 20 capable of producing an organic EL
display device having a high pixel density. Preferably, the height
r.sub.1 of the wall surface 31 of the first recess 30 is set to be
not more than 6 .mu.m.
[0104] Next, the aforementioned angle .theta.2 shown in FIG. 8 is
described. The angle .theta.2 corresponds to a maximum value of an
inclined angle of the deposition material 98 that can reach the
organic EL substrate 92, out of the deposition material 98 that
comes in an inclined manner with respect to the normal direction N
of the base member 21 and passes through the through-portion 42
near the connection portion 41. This is because the deposition
material 98 coming at an inclined angle greater than the angle
.theta.2 adheres to the wall surface 31 of the first recess 30,
before the deposition material 98 reaches the substrate 92. Thus,
by decreasing the angle .theta.2, it can be prevented that the
deposition material 98 coming at a large inclined angle and passing
through the through-portion 42 adheres to the substrate 92.
Therefore, it can be prevented that the deposition material 98
adheres to a portion of the organic EL substrate 92, which is
outside a part overlapping with the through-portion 42. Namely, to
decrease the angle .theta.2 can prevent variation in planar
dimension and thickness of the deposition material 98 adhering to
the organic EL substrate 92. From this point of view, the
through-hole 25 is formed such that the angle .theta.2 is not more
than 45 degrees, for example. FIG. 8 shows the example in which the
size of the first recess 30 in the first surface 21a, i.e., the
opening size of the through-hole 25 in the first surface 21a is
larger than the size r.sub.2 of the first recess 30 in the
connection portion 41. Namely, the value of the angle .theta.2 is a
positive value. However, although not shown, the size r.sub.2 of
the first recess 30 in the connection portion 41 may be larger than
the size of the first recess 30 in the first surface 21a. Namely,
the value of the angle .theta.2 may be a negative value.
Manufacturing Method of Deposition Mask
[0105] Next, a manufacturing method of a deposition mask 20 is
described.
(Preparation of Metal Plate)
[0106] Firstly, a metal plate 64 for manufacturing a deposition
mask is prepared. The metal plate 64 is prepared in the form of a
roll obtained by winding an elongated metal plate. As the metal
plate 64, a metal plate made of an iron alloy containing nickel is
used, for example. A thickness of the metal plate 64 is 3 .mu.m,
for example, or may be not less than 5 .mu.m or not less than 10
.mu.m. In addition, the thickness of the metal plate 64 is not more
than 50 .mu.m, for example, or may be not more than 30 .mu.m or not
more than 20 .mu.m. A rolling method or a plating deposition method
can be employed as a method of producing the metal plate 64 having
a desired thickness.
[0107] Next, a method of manufacturing the deposition mask 20 with
the use of the metal plate 64 is described with reference mainly to
FIGS. 9 to 22. In the below-described manufacturing method of the
deposition mask 20, as shown in FIG. 9, the metal plate 64 is
processed such that a plurality of deposition mask portions
including the through-holes 25 are formed on the metal plate 64
(processing step), and then the deposition mask portions are
separated from the metal plate 64 (separation step), so that the
sheet-like deposition masks 20 can be obtained.
(Processing Step)
[0108] The step of processing the metal plate 64 includes a step of
etching the elongated metal plate 64 by using a photolithographic
technique to form first recesses 30 from the side of a first
surface 64a of the metal plate 64, and a step of etching the metal
plate 64 by using a photographic technique to form second recesses
35 from the side of a second surface 64b of the metal plate 64. By
communicating the first recesses 30 and the second recesses 35
formed in the metal plate 64 to each other, the through-holes 25
are produced in the metal plate 64. In the below-described example,
the step of forming the first recesses 30 is performed before the
step of forming the second recesses 35, and a step of sealing the
produced first recesses 30 is performed between the step of forming
the first recesses 30 and the step of forming the second recesses
35. Herebelow, the respective steps are described in detail.
[0109] FIG. 9 shows a manufacturing apparatus 60 for producing the
deposition masks 20. As shown in FIG. 9, a roll 62 having a core 61
around which the metal plate 64 is wound is prepared. By rotating
the core 61 to reel out the roll 62, the metal plate 64 extending
like a strip is supplied, as shown in FIG. 9.
[0110] The supplied metal plate 64 is conveyed to a processing
apparatus (etching means) 70 by a conveyor roller 72. Respective
processes shown in FIGS. 10 to 17 are performed by the processing
apparatus 70. In this embodiment, the plurality of depositions
masks 20 is allocated in a width direction of the metal plate 64.
In other words, the metal plate 64 is processed such that the
below-described deposition mask portions, which will be separated
from the metal plate 64 to provide the deposition masks 20, are
aligned in the width direction of the metal plate 64. In this case,
preferably, the plurality of deposition masks 20 are allocated to
the metal plate 64 such that the direction of a long side 26 of the
deposition mask portion, i.e., the deposition mask 20 corresponds
to the longitudinal direction of the eloigned metal plate 64.
[0111] As shown in FIG. 10, resist films 65c, 65d each containing a
negative-type photosensitive resist material are firstly formed on
the first surface 64a and the second surface 64b of the metal plate
64. For example, the resist films 65c, 65d are formed by applying a
coating liquid containing a negative-type photosensitive resist
material onto the first surface 64a and the second surface 64b of
the metal plate e64, and then by drying the coating liquid.
[0112] Then, exposure masks 68a, 68b, which do not allow light
transmit through areas of the resist films 65c, 65d to be removed
therefrom, are prepared. As shown in FIG. 11, the exposure masks
68a, 68b are located on the resist films 65c, 65d, respectively.
For example, glass dry plates, which do not allow light to transmit
through the areas to be removed from the resist films 65c, 65d, are
used as the exposure masks 68a, 68b. Thereafter, the exposure masks
68a, 68b are sufficiently brought into tight contact with the
resist films 65c, 65d by vacuum bonding.
[0113] A positive-type photosensitive resist material may be used.
In this case, an exposure mask, which allows light to transmit
through an area to be removed of the resist film, is used.
[0114] Thereafter, the resist films 65c, 65d are exposed across the
exposure masks 68a, 68b (exposure step). Further, in order to form
an image on the exposed resist films 65c, 65d, the resist films
65c, 65d are developed (development step). Thus, as shown in FIG.
12, a first resist pattern 65a can be formed on the first surface
64a of the metal plate 64, and a second resist pattern 65b can be
formed on the second surface 64b of the metal plate 64. The
development step may include a resist heating step for increasing a
hardness of the resist films 65c, 65d, or for more securely
adhering the resist films 65c, 65d to the metal plate 64. The
resist heating step can be performed at a temperature not less than
a room temperature and not more than 400.degree. C., for
example.
[0115] Then, as shown in FIG. 13, a first-surface etching step is
performed, in which areas of the first surface 64a of the metal
plate 64, which is not covered with the first resist pattern 65a,
is etched by using a first etchant. For example, the first etchant
is jetted to the first surface 64a of the metal plate 64 across the
first resist pattern 65a, from a nozzle disposed on the side facing
the first surface 64a of the conveyed metal plate 64. As a result,
as shown in FIG. 13, the areas of the metal plate 64, which are not
covered with the first resist pattern 65a, are eroded by the first
etchant. Thus, the plurality of first recesses 30 are formed in the
first surface 64a of the metal plate 64. The first etchant to be
used is an etchant containing ferric chloride solution and
hydrochloric acid, for example.
[0116] Thereafter, as shown in FIG. 14, the first recesses 30 are
coated with a resin 69 resistant to a second etchant that is used
in a succeeding second-surface etching step. Namely, the first
recesses 30 are sealed with the resin 69 resistant to the second
etchant. In the example shown in FIG. 14, a film of the resin 69 is
formed to cover not only the formed first recesses 30 but also the
first surface 64a (first resist pattern 65a).
[0117] Then, as shown in FIG. 15, areas of the second surface 64b
of the metal plate 64, which are not covered with the second resist
pattern 65b, are etched so as to perform the second-surface etching
step in which the second recesses 35 are formed in the second
surface 64b. The second-surface etching step is performed until the
first recesses 30 and the second recesses 35 are communicated with
each other so that the through-holes 25 are formed. Similarly to
the first etchant, the second etchant to be used is an etchant
containing ferric chloride solution and hydrochloric acid, for
example.
[0118] The erosion by the second etchant develops in a part where
the metal plate 64 is in contact with the second etchant. Thus, the
erosion develops not only in the normal direction N (thickness
direction) of the metal plate 64 but also in a direction along the
plate plane of the metal plate 64. Preferably, the second-surface
etching step is ended before two second recesses 35, which are
respectively formed on positions facing adjacent two apertures 66a
of the second resist pattern 65b, merge on the reverse to a bridge
portion 67a positioned between the two apertures 66a. Thus, as
shown in FIG. 16, the aforementioned top portion 43 can remain in
the second surface 64b of the metal plate 64.
[0119] Thereafter, as shown in FIG. 17, the resin 69 is removed
from the metal plate 64. For example, the resin 69 can be removed
by using an alkali-based peeling liquid. When the alkali-based
peeling liquid is used, as shown in FIG. 17, the resist patterns
65a, 65b are removed simultaneously with the removal of the resin
69. However, after the removal of the resin 69, the resist patterns
65a, 65b may be removed separately from the resin 69.
[0120] FIG. 18 is a plan view showing an intermediate product 50
obtained by processing the deposition masks 20 to form the
through-holes 25, as described above. The deposition masks 20 are
allocated to the intermediate product 50. In other words, the
intermediate product 50 has the plurality of deposition mask
portions 51 and a support portion 56. In FIG. 81, the symbol T1
represents a conveying direction of the metal plate 64 in the
manufacturing step of the deposition masks 20, and the symbol T2
represents a direction (referred to also as width direction
herebelow) orthogonal to the conveying direction T1. The conveying
direction T1 corresponds to the longitudinal direction of the
elongated metal plate 64.
[0121] Each deposition mask portion 51 is a portion of the metal
plate 64, which becomes the deposition mask 20 by separation. The
deposition mask portion 51 includes a pair of long sides 52 and a
pair of short sides 53, which correspond to the pair of long sides
26 and the pair of short sides 27 of the deposition mask 20. The
plurality of through-holes 25 are formed in the deposition mask
portion 51. For example, the deposition mask portion 51 includes
the effective area 22 having the plurality of through-holes 25
formed therein, and the surrounding area 23 around the effective
area 22.
[0122] As shown in FIG. 18, the plurality of deposition mask
portions 51 are aligned in a direction intersecting with the long
side 52. For example, the long side 52 is parallel to the conveying
direction T1, and the direction in which the deposition mask
portions 51 are aligned is parallel to the width direction T2.
[0123] The support portion 56 is a portion that surrounds the
plurality of deposition mask portions 51 in a plan view, and is
partially connected to the deposition mask portions 51. In the
example shown in FIG. 18, the support portion 56 is a portion of
the metal plate 64, which is other than the deposition mask
portions 51.
[0124] Herebelow, a connection part 54 between the deposition mask
portion 51 and the support portion 56 is described. FIG. 19 is an
enlarged view showing an area of the intermediate product 50 of
FIG. 18, which is surrounded by dotted lines indicated by the
symbol XIX. In the example shown in FIGS. 18 and 19, the short side
53 of the deposition mask portion 51 is partially connected to the
support portion 56. For example, as shown in FIG. 19, the short
side 53 of the deposition mask portion 51 includes a plurality of
projections 53a projecting toward the support portion 56 so as to
be connected to the support portion 56. On the other hand, the long
side 52 of the deposition mask portion 51 is not connected to the
support portion 56. In other words, between the long side 52 of the
deposition mask portion 51 and the support portion 56, there is a
gap 55 over the entire area of the long side 52. In addition, no
support portion 56 exists between the long sides 52 of the adjacent
two deposition mask portions 51. In other words, between the long
sides 52 of the adjacent two deposition mask portions 51, there is
the gap 55 over the entire area of each long side 52.
[0125] The gap 55 can be formed simultaneously with the
through-holes 25 in the aforementioned processing step. For
example, in the above processing step, the resist films 65c, 65d
are exposed and developed such that no resist patterns 65a, 65b
remains on a portion of the metal plate 64 where the gap 55 is to
be formed. Then, the areas of the metal plate 64, which are not
covered with the resist patterns 65a, 65b, are removed by etching.
Thus, the gap 55 shown in FIGS. 18 and 19 can be formed on the
metal plate 64 simultaneously with the plurality of through-holes
25.
[0126] The etching for forming the gap 55 may be performed on both
sides of the first surface 64a and the second surface 64b of the
metal plate 64 (case 1), or may be performed only on one side of
the first surface 64a and the second surface 64b of the metal plate
64 (case 2).
[0127] In the case 1, the resist film 65c is exposed and developed
such that no resist pattern 65a remains on a portion of the first
surface 64a of the metal plate 64, where the gap 55 is to be formed
(referred to also as possible gap portion herebelow). In addition,
the resist film 65d is exposed and developed such that no resist
pattern 65b remains on the possible gap portion of the second
surface 64b of the metal plate 64. Then, the metal plate 64 is
etched from the side of the first surface 64a. Thus, the first
recesses 30 are formed in a portion of the first surface 64a of the
metal plate 64, which will become the effective area 22 of the
deposition mask 20. Simultaneously therewith, the first recesses 30
are formed in the possible gap portion of the first surface 64a.
Then, the first recesses 30 are coated with the resin 69.
Thereafter, the metal plate 64 is etched from the side of the
second surface 64b of the metal plate 64. Thus, the second recesses
35 are formed in a portion of the second surface 64b of the metal
plate 64, which will become the effective area 22 of the deposition
mask. Simultaneously therewith, the second recesses 35 are formed
in the possible gap portion of the second surface 64b. Thus, the
gap 55 can be formed simultaneously with the through-holes 25.
[0128] In the case 2, the resist film 65d is exposed and developed
such that no resist pattern 65b remains on the possible gap portion
of the second surface 64b of the metal plate 64. On the other hand,
the resist film 65c is exposed and developed such that the resist
pattern 65a remains on the possible gap portion of the first
surface 64a of the metal plate 64. Following thereto, the metal
plate 64 is etched from the side of the first surface 64a of the
metal plate 64, so that the first recesses 30 are formed in a
portion of the metal plate 64, which will become the effective area
22 of the deposition mask 20. At this time, no first recess 30 is
formed in the possible gap portion of the first surface 64a. Then,
the first recesses 30 are coated with the resin 69. At this time,
the possible gap portion of the second surface 64a is coated with
the resin 69. Thereafter, the metal plate 64 is etched from the
side of the second surface 64b. Thus, the second recesses 35 are
formed in a portion of the second surface 64b of the metal plate
64, which will become the effective area 22 of the deposition mask.
Simultaneously therewith, the second recesses 35 are formed in the
possible gap portion of the second surface 64b. At this time, the
etching is performed such that the second recesses 35 reach the
first surface 64a, whereby the gap 55 can be formed on the possible
gap portion.
[0129] In the case 2, during the first etching step for forming the
first recesses 30, the possible gap portion of the first surface
64a of the metal plate 64 is not subjected to the half etching.
Thus, even when the metal plate 64 has a small thickness, it can be
restrained that the possible gap portion of the metal plate 64
cracks after the first etching step.
[0130] The size of the gap 55 is set such that the deposition mask
portion 51 does not come into contact with the support portion 56
and other deposition mask portions 51, when the intermediate
product 50 is conveyed. A size 51 of the gap 55 in the width
direction T2, which is between the deposition mask portion 51 and
the support portion 56, is not less than 0.1 mm and not more than 5
mm, for example. In addition, a size of S2 of the gap 55 in the
width direction T2, which is between the adjacent two deposition
mask portions 51 is not less than 0.1 mm and not more than 5 mm,
for example. In addition, a size S3 of the gap 55 in the conveying
direction T1, which is between the short side 53 of the deposition
mask portion 51 and the support portion 56, is not less than 30
.mu.m and not more than 100 .mu.m, for example. In addition, a
pitch P between the projections 53a in the direction of the short
side 53 is not less than 200 .mu.m and not more than 400 .mu.m, for
example.
(Separation Step)
[0131] Following thereto, the separation step is performed, in
which the deposition mask portions 51 of the aforementioned
intermediate product 50 are separated from the support portion 56
thereof. As shown in FIG. 9, the intermediate product 50 obtained
by processing the metal plate 64 is firstly conveyed to a
separation apparatus 73 for performing the separation step. For
example, the intermediate product 50 is conveyed to the separation
apparatus 73 by the conveyor rollers 72, 72 that are rotated with
sandwiching the intermediate product 50 therebetween. As described
above, in the intermediate product 50, when the long side 52 of the
deposition mask portion 51 is not connected to the support portion
56, it is considered that the deposition mask portion 51 tends to
shake and/or warp. In consideration of this point, the intermediate
product 50, the conveyor rollers 72 or a conveyor path may be
equipped with means for restraining shaking and/or warping of the
deposition mask portions 51. For example, the restraint means
include a pair of films disposed on the first surface side and the
second surface side of the intermediate product 50. Since the
intermediate product 50 is conveyed to the separation apparatus 73
with the intermediate product 50 being sandwiched between the pair
of films, shaking and/or warping of the deposition mask portion 51
can be restrained.
[0132] FIG. 20 is a view showing the separation step of separating
the deposition mask portions 51 from the support portion 56. As
described above, the long side 52 of the deposition mask portion 51
and the support portion 56 are not connected. Thus, by breaking the
connection part 54 between the short side 53 of the deposition mask
portion 51 and the support portion 56, the deposition mask portion
51 can be separated from the support portion 56 to obtain the
deposition mask 20. FIG. 21 is an enlarged plan view showing the
deposition mask 20 obtained from the intermediate product 50.
[0133] The separation step includes, for example, a breaking step
in which the connection part 54 of the short side 53 of the
deposition mask portion 51, which is connected to the support
portion 56. In this case, as shown in FIG. 21, a part of the
deposition mask 20 at which the connection part 54 is broken, e.g.,
distal ends of the projections 53a of the short side 53 become
broken-out surfaces 27b. Thus, the short side 27 of the deposition
mask 20 partially has the broken-out surfaces 27b. FIG. 22 is a
side view showing the broken-out surfaces 27b of the projections
27a of the short side 27 of the deposition mask 20, seen from the
direction of the arrow XXII of FIG. 21.
[0134] In the breaking step, by pulling the deposition mask portion
51 upward in FIG. 22 with respect to the support portion 56, the
connection part 54 between the short side 53 of the deposition mask
portion 51 and the support portion 56 is broken. In this case, as
shown in FIG. 22, the broken-out surface 27b of the projection 27
may have a burr 27c caused by a force exerted from the support
portion 56 upon breakage. The burr 27c extends toward a direction
(downward direction in FIG. 22) of the force exerted from the
support portion 56 upon breakage. The broken-out surface 27b can be
defined as a surface having such a burr 27c. On the other hand,
since the long side 52 of the deposition mask portion 51 is not
connected to the support portion 56, the long side 26 of the
deposition mask 20 has no broken-out surface.
[0135] FIGS. 23A and 23B are views showing results of an area of
the long side 26 of the deposition mask 20 of FIG. 22, which is
surrounded by the dotted lines indicated by the symbol XXIII, the
area being observed from the side of the first surface 20a and from
the second surface 20b, respectively. In addition, FIGS. 24A and
24B are views showing results of an area of the short side 27 of
the deposition mask 20 of FIG. 22, which is surrounded by the
dotted lines indicated by the symbol XXIII, the area being observed
from the side of the first surface 20a and from the second surface
20b, respectively. In FIGS. 23A, 23B, 24A and 24B, a magnification
upon observation is 10 times.
[0136] As shown in FIG. 24A, a portion which looked black (referred
to also as dark portion) 27x was observed at the distal end of the
projection 27a of the short side 27. The width of the dark portion
27x was 13.8 .mu.m. As shown in FIG. 24B, when observed from the
side of the second surface 20b of the deposition mask 20, a similar
dark portion 27y was confirmed.
[0137] On the other hand, in the area of the long side 26, no dark
portion was observed, or a dark portion having a thickness smaller
than that of the short side 27 was confirmed. For example, as shown
in FIG. 23B, when seen from the side of the second surface 20b, the
dark portion 26y having a thickness of 5.1 .mu.m was confirmed.
[0138] FIG. 25A is a view schematically showing an area of the
deposition mask 20 of FIG. 22, which is surrounded by the dotted
lines indicated by the symbol XXIII, i.e., a sectional shape of the
long side 26 of the deposition mask 20. In addition, FIG. 25B is a
view showing a modification example of the sectional shape of the
long side 26. As shown in FIGS. 25A and 25B, the long side 26 of
the deposition mask 20 may have a curved surface having an inwardly
projecting shape, which is cased by the side etching performed when
the etching step for forming the through-holes 25. FIG. 25A is a
view showing an example of the sectional shape of the long side 26,
when the gap 55 is formed by etching from only the second surface
64b of the metal plate 64. In addition, FIG. 25A is a view showing
an example of the sectional shape of the long side 26, when the gap
55 is formed by etching from both the first surface 64a and the
second surface 64b of the metal plate 64. The sectional shape
corresponding to the top pictures shown in FIGS. 23A and 23B is
FIG. 25A.
[0139] When the gap 55 is formed by etching only from the second
surface 64b of the metal plate 64, as shown in FIG. 25A, a curved
surface, which extends outside from the side of the second surface
20b toward the first surface 20a, is formed on the long side 26.
This curved surface is recognized when the long side 26 is observed
from the side of the second surface 20b, but is not recognized when
the long side 26 is observed from the side of the first surface
20a. In other words, the long side 26 has a sectional shape that
projects most outside at a part meeting the first surface 20a. The
dark portion 26y, which was confirmed when the long side 26 was
observed from the side of the second surface 20b, is considered to
be caused by scattering of light in the curved surface.
[0140] When the gap 55 is formed by etching both from the first
surface 64a and the second surface 64b of the metal plate, as shown
in FIG. 25B, a curved surface caused by the side etching when the
first recesses 30 are formed, which is located on the side of the
first surface 20a, and a curved surface caused by the side etching
when the second recesses 35 are formed, which is located on the
side of the second surface 20b, are formed on the long side 26. In
this case, the long side 26 has a sectional shape that projects
most outside at a part where the curved surface on the side of the
first surface 20a and the curved surface on the side of the second
surface 20b meet. Since the size of the second recess 35 on the
side of the second surface 20b is larger than the size of the first
recess 30 on the side of the first surface 20a (see FIGS. 5 to 7),
the degree of side etching is larger on the side of the second
surface 20b. Thus, the curved surface of the long side 26 on the
side of the second surface 20b is larger. As a result, the width of
the dark portion, which is confirmed when the long side 26 is
observed from the side of the second surface 20b, is considered to
be larger than the width of the dark portion, which is confirmed
when the long side 26 is observed from the side of the first
surface 20a.
[0141] FIG. 25C is a view showing a state in which the deposition
mask 20 including the long side 26 having the sectional shape shown
in FIG. 25A faces the organic EL substrate 92. In addition, FIG.
25D is a view showing a state in which the deposition mask 20
including the long side 26 having the sectional shape shown in FIG.
25B faces the organic EL substrate 92. In the examples shown in
FIGS. 25C and 25D, the plurality of deposition masks 20 are
arranged with a predetermined space M therebetween in the direction
of the short side 27. The space M is set to be not less than a
predetermined distance in order to prevent that the long sides 26
of the adjacent two deposition masks 20 are not in contact with
each other. The space M is a space between the portions of the long
sides 26 of the adjacent two deposition masks 20, the portions most
projecting outside. In the example shown in FIG. 25C, the
deposition masks 20 are arranged such that the space M at a part
meeting the first surface 20a is not less than the predetermined
distance. In the example shown in FIG. 25D, the deposition masks 20
are arranged such that the space M at a part where the curved
surface of the long side 26 on the side of the first surface 20a
and the curved surface thereof on the side of the second surface
20b meet is not less than the predetermined distance.
[0142] When the examples shown in FIGS. 25C and 25D are compared to
each other, it is found that the example shown in FIG. 25C has a
larger area in contact with the organic EL substrate 92. Thus, the
example shown in FIG. 25C is more advantageous in terms of contact
with the organic EL substrate 92.
[0143] In the example shown in FIG. 25D, if the area of the first
surface 20a of the deposition mask 20 in contact with the organic
EL substrate 92 is made equivalent to the example shown in FIG.
25C, the distance between the long sides 26 of the adjacent two
deposition masks 20 becomes smaller, which increases the risk that
the deposition masks 20 are brought into contact with each
other.
[0144] Namely, the improvement of contact with the organic EL
substrate 92 and the risk reduction of contact between the adjacent
two deposition masks 20 are in a trade-off relationship. According
to the example shown in FIG. 25C, the two requirements in the
trade-off relationship can be achieved more satisfactorily than the
example shown in FIG. 25D.
[0145] When the deposition masks 20 are brought into contact with
each other, the deposition masks 20 may be damaged and/or deformed.
When the deposition mask 20 is deformed, the area of the first
surface 20a of the deposition mask 20 in contact with the organic
EL substrate 92 decreases, so that the contact with the organic EL
substrate 92 lowers. Thus, excessive reduction of the distance
between the adjacent two deposition masks 20 may result in decrease
of the contact with the organic EL substrate 92.
[0146] FIG. 26 is a sectional view schematically showing an area of
the deposition mask of FIG. 22, which is surrounded by dotted lines
indicated by the symbol XXIV. As shown in FIG. 26, there is a
possibility that a curved surface having an outwardly projecting
shape is formed on the short side 27 of the deposition mask 20 on
the side of the second surface 20b, which is caused by the fact
that the short side 27 is pulled from the support portion 56 toward
the first surface 20a during the aforementioned breaking step. The
dark portion 27y, which was confirmed when the short side 27 was
observed from the side of the second surface 20b, is considered to
be caused by scattering of light in the curved surface. In
addition, the burr 27 projecting from the first surface 20a may be
formed on the side of the first surface 20a. The dark portion 27x,
which was confirmed when the short side 27 was observed from the
side of the first surface 20a, is considered to be caused by
scattering of light in the burr 27c.
Effect of Embodiment
[0147] A minimum distance S4 (see FIG. 21) in the plane direction
of the base member 21, which is from the long side 26 of the
deposition mask 20 up to the through-holes 25, is generally smaller
than a minimum distance in the plane direction of the base member
21, which is from the short side 27 up to the through-holes 25.
Thus, when the long side 26 is deformed to have a wavelike shape,
for example, a dimensional precision and/or positional precision of
the deposition material 98 adhering to the organic EL substrate 92
through the through-holes 25 positioned near to the long side 26
lower. In this embodiment, the deposition mask portions 51 of the
intermediate product 50 are not connected to the support portion
56. Thus, in the separation step of separating the deposition mask
portion 51 from the support portion 56, the long side 52 is not
subjected to a force from the support portion 56. Thus, it can be
restrained that the long side 26 is deformed to have a wavelike
shape, for example. As a result, it is possible to adhere the
deposition material 98 to the organic EL substrate 29, with
excellent dimensional precision and/or positional precision.
[0148] The above-described embodiment can be variously modified.
Herebelow, a modification example is described with reference to
the drawings according to need. In the below description and the
drawings used in the below description, a part that can be
similarly constituted to the above embodiment has the same symbol
as that of corresponding part the above embodiment, and overlapped
description is omitted. In addition, when the effect obtained by
the aforementioned embodiment is apparently obtained in the
modification examples, description thereof is possibly omitted.
(Modification Example of Connection and Broken-Out Surface)
[0149] In the above-described embodiment, the entire area of the
long side 52 of the deposition mask portion 51 of the intermediate
product 50 is not connected to the support portion 56. However, not
limited thereto, the long side 52 of the deposition mask portion 51
of the intermediate product 50 may be connected to the support
portion 56, as long as the positional precision of the
through-holes 25 is not affected. For example, the long side 52 may
be connected to the support portion 56 in an area of the long side
52, which is not overlapped with the through-holes 25 when the long
side 52 is seen along the width direction T2 of the intermediate
product 50. In other words, it is preferable that an area of the
long side 52 of the deposition mask portion 51, which is at least
overlapped with the through-holes 25 when the long side 52 is seen
along the width direction T2 of the intermediate product 50, is not
connected to the support portion 56. In this case, there is no
broken-out surface in the area that is overlapped with the
through-holes 25 when the long side 26 is seen in the width
direction of the deposition mask 20. In other words, there may be a
broken-out surface in an area that is not overlapped with the
through-holes 25 when the long side 26 is seen in the width
direction of the deposition mask 20. Since the area of the long
side 52 of the deposition mask portion 51, which is overlapped with
the through-holes 25 in the width direction T2, is not connected to
the support portion 56, it is possible to restrain that deformation
occurring in the deposition mask portion 15 when the deposition
mask portion 51 is separated from the support portion 56 affects
the positional precision of the through-holes 25.
[0150] Preferably, in the intermediate product 50, a ratio of a
part of the long side 52 of the deposition mask portion 51, which
is connected to the support portion 56, is smaller than a ratio of
a part of the short side 53 of the deposition mask portion 51,
which is connected to the support portion 56. Due to this, it is
possible to restrain that the precision of the deposition step is
lowered because of the deformation of the long side 52 upon
breakage. In this case, in the deposition mask 20 obtained by the
separation step, a ratio of the broken-out surface in the long side
26 is smaller than a ratio of the broken-out surface in the short
side 27.
[0151] The ratio of the part of the short side 53 of the deposition
mask portion 51, which is connected to the support portion 56, can
be calculated by, for example, dividing a sum of widths K4 of
portions of the short side 53, which are connected to the support
portion 56, by a length K2 (see FIG. 18) of the short side 53. As
shown in FIG. 19, for example, the width K4 is a width of the
narrowest portion of the projection 53a connected to the support
portion 56. Similarly, the ratio of the part of the long side 52 of
the deposition mask 51, which is connected to the support portion
56, can be calculated by, for example, a sum of widths of portions
of the long side 52, which are connected to the support portion 56,
by a length K1 (see FIG. 18) of the long side 52.
[0152] In addition, the ratio of the broken-out surfaces 27b in the
short side 27 of the deposition mask 20 can be calculated by, for
example, dividing a sum of widths K6 (see FIG. 21) of the
broken-out surfaces 27b present in the short side 27, by a length
K5 (see FIG. 21) of the short side 27. Similarly, the ratio of the
broken-out surfaces in the long side 26 of the deposition mask 20
can be calculated by, for example, dividing a sum of widths of the
broken-out surfaces present in the long side 26 by the length of
the long side 26.
[0153] Alternatively, the ratio of the part of the short side 53 of
the deposition mask portion 51, which is connected to the support
portion 56, may be calculated by dividing the number of portions of
the short side 53, which are connected to the support portion 56,
by the length K2 of the short side 53. In the example shown in FIG.
19, the number of portions of the short side 53, which are
connected to the support portion 56, is four. Similarly, the ratio
of the part of the long side 52 of the deposition mask portion 51,
which is connected to the support portion 56, may be calculated by
dividing the number of portions of the long side 52, which are
connected to the support portion 56, by the length K1 of the long
side 52.
[0154] Similarly, the ratio of the broken-out surfaces 27 in the
short side 27 of the deposition mask 20 may be calculated by
dividing the number of broken-out surfaces 27b present in the short
side 27 by the length K5 of the short side 27. Similarly, the ratio
of the broken-out surfaces in the long side 26 of the deposition
mask 20 may be calculated by dividing the number of broken-out
surfaces present in the long side 26 by the length of the long side
26.
(Modification Example of Support Portion)
[0155] In the above-described embodiment, the example in which no
support portion 56 is present between the long sides 52 of the
adjacent two deposition mask portions 51 is shown. However, not
limited thereto, as shown in FIG. 27, between the long sides 52 of
the adjacent two deposition mask portions 51, there may be present
the support portion 56 that extends in the conveying direction T1
and is not connected to the long sides 52 of the deposition mask
portions 51.
DESCRIPTION OF REFERENCE NUMERALS
[0156] 10 Deposition mask apparatus [0157] 15 Frame [0158] 20
Deposition mask [0159] 21 Base member [0160] 22 Effective area
[0161] 23 Surrounding area [0162] 25 Through-hole [0163] 26 Long
side [0164] 27 Short side [0165] 27a Projection [0166] 27b
Broken-out surface [0167] 27c Burr [0168] 30 First recess [0169] 31
Wall surface [0170] 35 Second recess [0171] 36 Wall surface [0172]
41 Connection portion [0173] 43 Top portion [0174] 50 Intermediate
product [0175] 51 Deposition mask portion [0176] 52 Long side
[0177] 53 Short side [0178] 53a Projection [0179] 54 Connection
part [0180] 55 Gap [0181] 56 Support portion [0182] 64 Metal plate
[0183] 65a First resist pattern [0184] 65b Second resist pattern
[0185] 65c First resist film [0186] 65d Second resist film [0187]
70 Processing apparatus [0188] 72 Conveyor roller [0189] 73
Separation apparatus [0190] 90 Deposition apparatus [0191] 92
Organic EL substrate [0192] 98 Deposition material
* * * * *