U.S. patent application number 16/845577 was filed with the patent office on 2021-07-01 for display module and method for monitoring backlight brightness comprising an array substrate with plural gate lines, data lines and a photosensitive unit.
The applicant listed for this patent is Shanghai Tianma Micro-Electronics Co., Ltd.. Invention is credited to Xiongping LI, Yang NAN, Xiaoping SUN, Kan WANG, Meilin WANG.
Application Number | 20210199500 16/845577 |
Document ID | / |
Family ID | 1000004800053 |
Filed Date | 2021-07-01 |
United States Patent
Application |
20210199500 |
Kind Code |
A1 |
WANG; Kan ; et al. |
July 1, 2021 |
DISPLAY MODULE AND METHOD FOR MONITORING BACKLIGHT BRIGHTNESS
COMPRISING AN ARRAY SUBSTRATE WITH PLURAL GATE LINES, DATA LINES
AND A PHOTOSENSITIVE UNIT
Abstract
A display module and a method for monitoring backlight
brightness are provided in the present disclosure. The display
module includes a display region including an opening region and a
non-opening region. The display module includes a backlight module
and an array substrate. The array substrate is at a light-exiting
side of the backlight module. The array substrate includes a
plurality of gate lines which extends along a first direction and
is arranged along a second direction, and further includes a
plurality of data signal lines which is arranged along the first
direction and extends along the second direction. The array
substrate further includes a first substrate and at least one
photosensitive unit, where the photosensitive unit is at a side of
the first substrate away from the backlight module; and the
photosensitive unit is disposed at the non-opening region for
sensing a luminous brightness of the backlight module.
Inventors: |
WANG; Kan; (Shanghai,
CN) ; NAN; Yang; (Shanghai, CN) ; LI;
Xiongping; (Shanghai, CN) ; SUN; Xiaoping;
(Shanghai, CN) ; WANG; Meilin; (Shanghai,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Shanghai Tianma Micro-Electronics Co., Ltd. |
Shanghai |
|
CN |
|
|
Family ID: |
1000004800053 |
Appl. No.: |
16/845577 |
Filed: |
April 10, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G01J 2001/4473 20130101;
H01L 31/02005 20130101; H01L 31/02164 20130101; G09G 2360/145
20130101; G01J 1/46 20130101; H01L 31/1136 20130101; H01L 31/02019
20130101; G09G 5/10 20130101; H01L 27/124 20130101; H01L 27/1443
20130101; H01L 27/1446 20130101; H01L 31/022466 20130101 |
International
Class: |
G01J 1/46 20060101
G01J001/46; G09G 5/10 20060101 G09G005/10; H01L 27/12 20060101
H01L027/12; H01L 27/144 20060101 H01L027/144; H01L 31/113 20060101
H01L031/113; H01L 31/0216 20060101 H01L031/0216; H01L 31/0224
20060101 H01L031/0224; H01L 31/02 20060101 H01L031/02 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 30, 2019 |
CN |
201911397209.5 |
Claims
1. A display module, comprising: a display region, including an
opening region and a non-opening region; a backlight module; and an
array substrate, wherein: the array substrate is at a light-exiting
side of the backlight module; the array substrate includes a
plurality of gate lines which extends along a first direction and
is arranged along a second direction, and further includes a
plurality of data signal lines which is arranged along the first
direction and extends along the second direction, wherein: the
plurality of gate lines and the plurality of data signal lines are
all configured at the non-opening region; and the first direction
intersects the second direction; and the array substrate further
includes a first substrate and at least one photosensitive unit,
wherein: the photosensitive unit is at a side of the first
substrate away from the backlight module; and the photosensitive
unit is disposed at the non-opening region for sensing a luminous
brightness of the backlight module.
2. The display module according to claim 1, wherein: the
photosensitive unit includes a photosensitive transistor.
3. The display module according to claim 2, wherein: the
photosensitive transistor includes a channel region, and the array
substrate further includes a light-blocking layer, wherein: the
light-blocking layer is at a side of the photosensitive transistor
away from the first substrate; and an orthographic projection of
the light-blocking layer on a plane of the first substrate covers
an orthographic projection of the channel region on the plane of
the first substrate.
4. The display module according to claim 2, wherein: the
photosensitive transistor includes a first gate electrode, a first
insulation layer, a first semiconductor layer, a first source
electrode and a first drain electrode, and a second insulation
layer, which are sequentially disposed at the side of the first
substrate away from the backlight module along a light-exiting
direction of the backlight module.
5. The display module according to claim 4, wherein: the first gate
electrode is made of a transparent conductive material.
6. The display module according to claim 2, wherein: the
photosensitive transistor includes a first insulation layer, a
second semiconductor layer, a second source electrode and a second
drain electrode, a second insulation layer, and a second gate
electrode, which are sequentially disposed at the side of the first
substrate away from the backlight module along a light-exiting
direction of the backlight module.
7. The display module according to claim 6, wherein: the second
gate electrode is made of a non-transparent material.
8. The display module according to claim 4, wherein: the array
substrate further includes a drive transistor, wherein: the drive
transistor includes a third gate electrode, the first insulation
layer, a third semiconductor layer, a third source electrode and a
third drain electrode, and the second insulation layer; the third
gate electrode and the first gate electrode are fabricated at a
same layer and with a same material; the third semiconductor layer
and the first semiconductor layer are fabricated at a same layer
and with a same material; the third source/drain electrodes and the
first source/drain electrodes are fabricated at a same layer and
with a same material; and the array substrate further includes a
pixel electrode, wherein: the pixel electrode and the second gate
electrode are disposed at a same layer; and the pixel electrode is
electrically connected to the third source electrode through a via
hole.
9. The display module according to claim 8, wherein: the array
substrate further includes a data signal line of the plurality of
data signal lines disposed at a same layer as the third drain
electrode, wherein the third drain electrode and one of the first
drain electrode and the second drain electrode are all connected to
the data signal line.
10. The display module according to claim 8, wherein: the array
substrate further includes a data signal line of the plurality of
data signal lines and a power voltage signal line, wherein: the
data signal line and the power voltage signal line are both
disposed at a same layer as the third drain electrode; the data
signal line is electrically connected to the third drain electrode;
and the first drain electrode or the second drain electrode is
electrically connected to the power voltage signal line.
11. The display module according to claim 8, wherein: the array
substrate further includes a switch transistor, wherein: the switch
transistor includes a fourth gate electrode, the first insulation
layer, a fourth semiconductor layer, a fourth source electrode and
a fourth drain electrode, and the second insulation layer; the
fourth gate electrode and the third gate electrode are fabricated
at a same layer and with a same material; the fourth semiconductor
layer and the third semiconductor layer are fabricated at a same
layer and with a same material; and the fourth source/drain
electrodes and the third source electrode are fabricated at a same
layer and with a same material.
12. The display module according to claim 11, wherein: the array
substrate further includes a reference signal line, wherein the
reference signal line and the first gate electrode are disposed at
a same layer, and the reference signal line is electrically
connected to the first gate electrode; and an orthographic
projection of the reference signal line on a plane of the first
substrate at least partially overlaps an orthographic projection of
the first source electrode or the second source electrode on the
plane of the first substrate; and a first capacitor is formed
between the reference signal line and the first source electrode or
the second source electrode; or an orthographic projection of the
reference signal line on the plane of the first substrate at least
partially overlaps an orthographic projection of the fourth source
electrode on the plane of the first substrate; and a first
capacitor is formed between the reference signal line and the
fourth source electrode.
13. The display module according to claim 1, further including: a
circuit for monitoring backlight brightness and at least one drive
chip, wherein: the circuit for monitoring backlight brightness
includes a photosensitive circuit and a signal processing circuit,
electrically connected to each other; the photosensitive circuit
includes the photosensitive unit; and the signal processing circuit
is disposed in the drive circuit.
14. The display module according to claim 13, wherein: the
photosensitive unit includes a photosensitive transistor; the
photosensitive circuit includes the photosensitive transistor, a
first capacitor, a switch transistor, and a first output terminal;
a control terminal of the photosensitive transistor is connected to
a reference signal line and a first terminal of the first
capacitor; an input terminal of the photosensitive transistor is
connected to a data signal line or a power voltage signal line; an
output terminal of the photosensitive transistor is connected to a
second terminal of the first capacitor; the second terminal of the
first capacitor is also connected to a fourth source electrode of
the switch transistor; a fourth drain electrode of the switch
transistor is connected to the first output terminal; a fourth gate
electrode of the switch transistor is connected to a control signal
terminal; and the first output terminal is connected to the signal
processing circuit.
15. The display module according to claim 13, wherein: the signal
processing circuit is an integration circuit.
16. The display module according to claim 13, wherein: the signal
processing circuit at least includes a second capacitor, an
amplifier, a second input terminal, a ground terminal, and a second
output terminal, wherein: the second input terminal and a first
output terminal are connected to each other; the second input
terminal is connected to a first terminal of the second capacitor
and a first terminal of the amplifier; a second terminal of the
amplifier is connected to the ground terminal; and a third terminal
of the amplifier is connected to a second terminal of the second
capacitor and the second output terminal.
17. The display module according to claim 14, further including: a
pixel drive circuit, wherein: the pixel drive circuit includes a
drive transistor and a light-emitting element; a third drain
electrode of the drive transistor is connected to the data signal
line; a third source electrode of the drive transistor is connected
to the light-emitting element; and a third gate electrode of the
drive transistor is connected to the control signal terminal.
18. A method for monitoring backlight brightness of a display
module, wherein: the display module includes a backlight module and
an array substrate, wherein: the array substrate is at a
light-exiting side of the backlight module; the array substrate
includes a plurality of gate lines which extends along a first
direction and is arranged along a second direction, and further
includes a plurality of data signal lines which is arranged along
the first direction and extends along the second direction,
wherein: the plurality of gate lines and the plurality of data
signal lines are all configured at the non-opening region; and the
first direction intersects the second direction; and the array
substrate further includes a first substrate and at least one
photosensitive unit, wherein: the photosensitive unit is at a side
of the first substrate away from the backlight module; and the
photosensitive unit is disposed at the non-opening region for
sensing a luminous brightness of the backlight module; and the
method for monitoring backlight brightness includes a photo-sensing
phase and a detection phase, at the photo-sensing phase, the
photosensitive unit receiving light from the backlight module; a
data signal line or a power voltage signal line inputting a signal
to a photosensitive transistor; the photosensitive unit converting
an optical signal to an electrical signal and transmitting the
electrical signal to a first capacitor connected in parallel with
the photosensitive unit; and at the detection phase, a fourth gate
electrode of a switch transistor receiving a control signal to
enable a conduction of the switch transistor, and the first
capacitor transmitting a stored electrical signal to a signal
processing circuit through the switch transistor.
19. The method according to claim 18, further including: at a
resetting phase, the fourth gate electrode of the switch transistor
receiving a control signal to enable a cutoff of the switch
transistor and to zero charges in the first capacitor.
20. The method according to claim 18, wherein: the display module
further includes a system host; at the detection phase, the signal
processing circuit detects a voltage change value of the signal
processing circuit; and when the voltage change value is less than
a preset value, the display module sends a reminder of abnormal
brightness to the system host.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority of Chinese Patent
Application No. 201911397209.5, filed on Dec. 30, 2019, the content
of which is incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present disclosure generally relates to the field of
display technology and, more particularly, relates to a display
module and a method for monitoring backlight brightness.
BACKGROUND
[0003] Display screens are widely used in various products, such as
mobile phones, TVs, vehicles, and the like. Particularly in the
field of the vehicles, in-vehicle display screens may transfer
important information to drivers, including vehicle driving
conditions, safety warnings, abnormal reminders, and the like. If
the display effect of in-vehicle display screens is abnormal (i.e.,
abnormal backlight brightness, unrecognizable picture content, and
the like), it is very likely that drivers may not effectively
recognize information in the in-vehicle display screens, thereby
causing irreparable losses. Therefore, there is a need to provide a
method for monitoring the backlight brightness of in-vehicle
display screens, which may monitor abnormal backlight brightness in
a timely manner.
SUMMARY
[0004] One aspect of the present disclosure provides a display
module. The display module includes a display region including an
opening region and a non-opening region. The display module
includes a backlight module and an array substrate. The array
substrate is at a light-exiting side of the backlight module. The
array substrate includes a plurality of gate lines which extends
along a first direction and is arranged along a second direction,
and further includes a plurality of data signal lines which is
arranged along the first direction and extends along the second
direction. The plurality of gate lines and the plurality of data
signal lines are all configured at the non-opening region, and the
first direction intersects the second direction. The array
substrate further includes a first substrate and at least one
photosensitive unit. The photosensitive unit is at a side of the
first substrate away from the backlight module, and the
photosensitive unit is disposed at the non-opening region for
sensing a luminous brightness of the backlight module.
[0005] Another aspect of the present disclosure provides a method
for monitoring backlight brightness of a display module. The
display module includes a backlight module and an array substrate.
The array substrate is at a light-exiting side of the backlight
module. The array substrate includes a plurality of gate lines
which extends along a first direction and is arranged along a
second direction, and further includes a plurality of data signal
lines which is arranged along the first direction and extends along
the second direction. The plurality of gate lines and the plurality
of data signal lines are all configured at the non-opening region,
and the first direction intersects the second direction. The array
substrate further includes a first substrate and at least one
photosensitive unit. The photosensitive unit is at a side of the
first substrate away from the backlight module, and the
photosensitive unit is disposed at the non-opening region for
sensing a luminous brightness of the backlight module. The method
for monitoring backlight brightness includes a photo-sensing phase
and a detection phase. At the photo-sensing phase, the
photosensitive unit receives light from the backlight module; the
data signal line or the power voltage signal line input a signal to
the photosensitive transistor; the photosensitive unit converts an
optical signal to an electrical signal and transmits the electrical
signal to a first capacitor connected in parallel with the
photosensitive unit. At the detection phase, a control signal is
transmitted to a fourth gate electrode of a switch transistor to
enable the switch transistor to be conducting, and the first
capacitor transmits a stored electrical signal to a signal
processing circuit through the switch transistor.
[0006] Other aspects of the present disclosure can be understood by
those skilled in the art in light of the description, the claims,
and the drawings of the present disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Drawings incorporated in the specification and forming a
part of the specification demonstrate the embodiments of the
present disclosure and, together with the specification, describe
the principles of the present disclosure.
[0008] FIG. 1 illustrates a top view of a display module according
to embodiments of the present disclosure;
[0009] FIG. 2 illustrates a structural schematic of a film layer of
a photosensitive transistor in a display module according to
embodiments of the present disclosure;
[0010] FIG. 3 illustrates another structural schematic of a film
layer of a photosensitive transistor in a display module according
to embodiments of the present disclosure;
[0011] FIG. 4 illustrates a structural schematic of a film layer of
a drive transistor in a display module according to embodiments of
the present disclosure;
[0012] FIG. 5 illustrates a schematic of a circuit for monitoring
backlight brightness according to embodiments of the present
disclosure;
[0013] FIG. 6 illustrates another schematic of a circuit for
monitoring backlight brightness according to embodiments of the
present disclosure;
[0014] FIG. 7 illustrates a structural schematic of a film layer of
a switch transistor in a display module according to embodiments of
the present disclosure;
[0015] FIG. 8 illustrates a structural schematic of a film layer in
a display module according to embodiments of the present
disclosure;
[0016] FIG. 9 illustrates another structural schematic of a film
layer in a display module according to embodiments of the present
disclosure;
[0017] FIG. 10 illustrates another structural schematic of a film
layer in a display module according to embodiments of the present
disclosure;
[0018] FIG. 11 illustrates another structural schematic of a film
layer in a display module according to embodiments of the present
disclosure; and
[0019] FIG. 12 illustrates a flow chart of a method for monitoring
backlight brightness according to embodiments of the present
disclosure.
DETAILED DESCRIPTION
[0020] Various embodiments of the present disclosure may be
described in detail with reference to the drawings. It should be
noted that, unless specifically stated otherwise, the relative
arrangement of components and steps, numerical expressions, and
numerical values set forth in the embodiments do not limit the
scope of the present disclosure.
[0021] The following description of at least one embodiment may be
merely illustrative and may be in no way intended to limit the
present disclosure and its application or use.
[0022] Techniques, methods, and equipment known to those skilled in
the art may not be discussed in detail, but where appropriate, the
techniques, methods, and equipment should be considered as a part
of the description.
[0023] In all examples shown and discussed herein, any specific
value should merely be construed as exemplary and not as a
limitation. Therefore, other examples of the embodiments may have
different values.
[0024] It should be noted that similar reference numerals and
letters indicate similar items in the following drawings.
Therefore, once an item is defined in one drawing, it does not need
to be discussed further in subsequent drawings.
[0025] In-vehicle display screens may transfer important
information to drivers, including vehicle driving conditions,
safety warnings, abnormal reminders, and the like. If the display
effect of the in-vehicle display screens is abnormal (i.e.,
abnormal backlight brightness, unrecognizable picture content, and
the like), it is very likely that drivers may not effectively
recognize the information in the in-vehicle display screens,
thereby causing irreparable losses. Therefore, there is a need to
provide a method for monitoring the backlight brightness of the
in-vehicle display screens, which may monitor abnormal backlight
brightness in a timely manner.
[0026] FIG. 1 illustrates a top view of a display module according
to embodiments of the present disclosure; and FIG. 2 illustrates a
structural schematic of a film layer of a photosensitive transistor
in a display module according to embodiments of the present
disclosure. Referring to FIGS. 1-2, a display module 100 may be
provided in the present disclosure. The display module 100 may
include a display region 11, and the display region 11 may include
an opening region 111 and a non-opening region 112. The display
module 100 may include a backlight module 20 and an array substrate
63 which is at a light-exiting side of the backlight module 20. The
array substrate 63 may include a plurality of gate lines 8 which
may extend along a first direction and may be arranged along a
second direction, and further include a plurality of data signal
lines 9 which may be arranged along the first direction and may
extend along the second direction. The gate lines 8 and the data
signal lines 9 may all at the non-opening region 112, and the first
direction may intersect the second direction. The array substrate
63 may further include a first substrate 21 and at least one
photosensitive unit 12. The photosensitive unit 12 may be at a side
of the first substrate 21 away from the backlight module 20. In
addition, the photosensitive unit 12 may be disposed at the
non-opening region 112 for sensing the luminous brightness of the
backlight module 20.
[0027] For example, the display module 100 may be provided in the
present disclosure. The display module 100 may include the
backlight module 20 and the array substrate 63. The array substrate
63 may be at the light-exiting side of the backlight module 20. The
plurality of gate lines 8 and the plurality of data signal lines 9
may be disposed at the array substrate 63. The plurality of gate
lines 8 may extend along the first direction and be arranged along
the second direction, and the plurality of data signal lines 9 may
be arranged along the first direction and extend along the second
direction. The display region 11 of the display module 100 may
include the opening region 111 and the non-opening region 112, and
the plurality of gate lines 8 and the plurality of data signal
lines 9 may all at the non-opening region 112, which may avoid the
influence on the light-exiting effect of the backlight module 20,
thereby ensuring the display effect of the display module 100. It
should be noted that the first direction may intersect the second
direction. For example, the first direction may be perpendicular to
the second direction.
[0028] The array substrate 63, disposed at the light-exiting side
of the backlight module 20, may further include the first substrate
21 and at least one photosensitive unit 12. The photosensitive unit
12 may be disposed at the side of the first substrate 21 away from
the backlight module 20, and a photosensitive surface of the
photosensitive unit 12 may be disposed toward the light-exiting
surface of the backlight module 20 to sense the luminous brightness
of the backlight module 20, which may timely and sensitively detect
the abnormal brightness of the backlight module 20, and timely
provide warning feedback of the display module 100 to users,
thereby avoiding the body damages and property losses of the users
when a hazardous problem occurs in a device corresponding to the
display module 100.
[0029] It should be noted that the arrangement density of the
photosensitive units 12 in the array substrate 63 may not be
limited in the present disclosure. For example, when only the
backlight module 20 corresponding to a button position in the
display module 100 is required to be monitored, it may be necessary
to only dispose one photosensitive unit 12 in a corresponding
position of the array substrate 63. That is, for an application
environment with particularly high safety requirements such as an
in-vehicle instrument, the photosensitive unit 12 may be arranged
in a key region of the display region 11 which requires special
attention to monitor the key region. For another example, when the
backlight module 20 is divided and the divided backlight module 20
is locally adjusted, the luminous brightness of the backlight
module 20 in each divided region may be monitored. That is, when
the adjustment mode of the backlight module 20 is local dimming,
the display module 100 may be divided according to the division of
the backlight module 20. At this point, at least one photosensitive
unit 12 may be respectively disposed at the middle position of each
divided region to monitor the luminous brightness of the backlight
module 20. For another example, the photosensitive units 12 may be
arranged at an equal distance according to the area of the display
region 11 of the display module 100, thereby implementing the
monitoring of the entire backlight module 20. Furthermore, the
photosensitive units 12 at different positions of the display
module 100 may be adjusted based on different groups and may not
necessarily set to work simultaneously. In such way, the
diversified control of the photosensitive units 12 may be
implemented to avoid wasting of resources.
[0030] FIG. 3 illustrates another structural schematic of a film
layer of a photosensitive transistor in a display module according
to embodiments of the present disclosure. Referring to FIGS. 1-3,
optionally, the photosensitive unit 12 may include a photosensitive
transistor 201/202. For example, any photosensitive unit 12 may
include at least one photosensitive transistor 201/202. By
combining the photosensitive transistor 201/202 with other devices,
the luminous brightness of the backlight module 20 may be
monitored, which may timely and sensitively detect the abnormal
brightness of the backlight module 20, and timely provide warning
feedback of the display module 100 to users.
[0031] Still in FIGS. 1-3, optionally, the photosensitive
transistor 201/202 may include a channel region, and the array
substrate 63 may further include a light-blocking layer 30. The
light-blocking layer 30 may be disposed at a side of the
photosensitive transistor 201/202 away from the first substrate 21.
The orthographic projection of the light-blocking layer 30 on the
plane of the first substrate 21 may cover the orthographic
projection of the channel region on the plane of the first
substrate 21.
[0032] For example, the array substrate 63 may further include the
light-blocking layer 30. The light-blocking layer 30 may be
disposed at the side of the photosensitive transistor 201/202 away
from the first substrate 21. The orthographic projection of the
light-blocking layer 30 on the plane of the first substrate 21 may
cover the orthographic projection of the channel region on the
plane of the first substrate 21. On the one hand, the
light-blocking layer 30 may be used to prevent the light emitted
from the backlight module 20 toward the photosensitive unit 12 from
partially leaking out of the array substrate 63, thereby preventing
the light, which are emitted from the backlight module 20 and
detected by the photosensitive unit 12, from being relatively weak,
which may make detection result inaccurate. On the other hand, the
light-blocking layer 30 may also block external light from entering
the array substrate 63, which may make the luminous brightness
detected by the photosensitive unit 12 to be higher than a normal
brightness result. Therefore, disposing the light-blocking layer 30
at the side of the photosensitive transistor 201/202 away from the
first substrate 21 may be beneficial to ensure that the
photosensitive unit 12 may detect accurate luminous brightness
emitted by the backlight module 20.
[0033] It should be noted that the light-blocking layer 30 in the
present disclosure may be a black matrix layer on a color film
substrate disposed opposite to the array substrate 63 in the
display module 100.
[0034] Referring to FIG. 2, optionally, the photosensitive
transistor 201 may include a first gate electrode 13, a first
insulation layer 14, a first semiconductor layer 15, a first source
electrode 161 and a first drain electrode 162, and a second
insulation layer 17, which are sequentially disposed on the side of
the first substrate 21 away from the backlight module 20 along the
light-exiting direction of the backlight module 20.
[0035] For example, the present disclosure may provide two types of
the photosensitive transistors with different film layer
arrangements. The photosensitive transistor 201 of one film layer
structure may be a bottom-gate structure, which may include the
first gate electrode 13, the first semiconductor layer 15, the
first source electrode 161 and the first drain electrode 162. The
film layers of the photosensitive transistor 201 with the
bottom-gate structure may be sequentially disposed at the side of
the first substrate 21 away from the backlight module 20 along the
light-exiting direction of the backlight module 20. The first
insulation layer 14 may be disposed between the first gate
electrode 13 and the first semiconductor layer 15, and the first
source electrode 161 and the first drain electrode 162 may be
disposed at a same layer. The first semiconductor layer 15 may be
disposed at the side of the first source electrode 161 and the
first drain electrode 162 adjacent to the first insulation layer
14. The channel region may be included between the first source
electrode 161 and the first drain electrode 162. The second
insulation layer 17 may be disposed at the side of the first source
electrode 161 and the first drain electrode 162 away from the first
insulation layer 14, and also may cover the above-mentioned channel
region.
[0036] Still in FIG. 2, optionally, the first gate electrode 13 may
be made of a transparent conductive material. For example, the
first gate electrode 13 of the bottom-gate photosensitive
transistor 201 may be made of the transparent conductive material
to enhance the photosensitivity effect of the photosensitive
transistor 201.
[0037] Referring to FIG. 3, optionally, the photosensitive
transistor 202 may include the first insulation layer 14, a second
semiconductor layer 25, a second source electrode 261 and a second
drain electrode 262, the second insulation layer 17, and a second
gate electrode 23, which are sequentially disposed at the side of
the first substrate 21 away from the backlight module 20 along the
light-exiting direction of the backlight module 20.
[0038] For example, the present disclosure may also provide the
photosensitive transistor 202 of another film layer structure,
where the photosensitive transistor 202 may be a top-gate
structure. Different from the photosensitive transistor 201 with
the bottom-gate structure, the second gate electrode 23 of the
photosensitive transistor 202 with the top-gate structure may be
disposed at the side of the second insulation layer 17 away from
the second source electrode 261 and the second drain electrode 262.
For example, the photosensitive transistor 202 with the top-gate
structure may include the first insulation layer 14, the second
semiconductor layer 25, the second source electrode 261 and the
second drain electrode 262, the second insulation layer 17, and the
second gate electrode 23, which are sequentially disposed at the
side of the first substrate 21 away from the backlight module 20
along the light-exiting direction of the backlight module 20. The
second insulation layer 17 may be filled in the channel region
between the second source electrode 261 and the second drain
electrode 262.
[0039] Referring to FIG. 1 and FIG. 3, optionally, the second gate
electrode 23 may be made of a non-transparent material. For
example, on the one hand, the second electrode 23 of the
photosensitive transistor 202 with the top-gate structure may be
made of the non-transparent material, which may, together with the
above-mentioned light-blocking layer 30, prevent the light emitted
from the backlight module 20 from leaking out of the array
substrate 63, thereby preventing the light, which are emitted from
the backlight module 20 and detected by the photosensitive unit 12,
from being relatively weak which may make detection result
inaccurate. On the other hand, the light-blocking layer 30,
together with the light-blocking layer 30, may also block external
light from entering the array substrate 63, which may make the
luminous brightness detected by the photosensitive unit 12 to be
higher than a normal brightness result. Therefore, the
photosensitive transistor 202 is set as the top-gate structure and
the second gate electrode 23 is set as not transparent, which may
be beneficial to ensure that the photosensitive unit 12 may detect
accurate luminous brightness emitted from the backlight module 20,
and detected abnormal brightness of the backlight module 20 may be
more accurate, and may be more beneficial to ensure that the
abnormal warnings provided to users are accurate.
[0040] It should be noted that although the present disclosure
provides two types of the photosensitive transistors 201 and 202,
each photosensitive unit 12 may select one of such two types of the
photosensitive transistors 201 and 202, which may not be limited
according to the embodiments of the present disclosure.
[0041] FIG. 4 illustrates a structural schematic of a film layer of
a drive transistor in the display module according to embodiments
of the present disclosure. Referring to FIGS. 2-4, optionally, the
array substrate 63 may further include a drive transistor 300. The
drive transistor 300 may include a third gate electrode 33, the
first insulation layer 14, a third semiconductor layer 35, a third
source electrode 362 and a third drain electrode 361, and the
second insulation layer 17. The third gate electrode 33 and the
first gate electrode 13 may be at a same layer and made of a same
material. The third semiconductor layer 35 and the first
semiconductor layer 15 or the second semiconductor layer 25 may be
at a same layer and made of a same material. The third source
electrode 362 and the third drain electrode 361, and the first
source electrode 161 and the first drain electrode 162 or the
second source electrode 261 and the second drain electrode 262 may
be at a same layer and made of a same material.
[0042] The array substrate 63 may further include a pixel electrode
19. The pixel electrode 19 may be disposed at a same layer as the
second gate electrode 23 and may be electrically connected to the
third source electrode 362 through a via hole.
[0043] For example, the array substrate 63 may further include the
drive transistor 300. The drive transistor 300 shown in the present
disclosure may be a bottom-gate structure. The drive transistor 300
with the bottom-gate structure may include the third gate electrode
33, the first insulation layer 14, the third semiconductor layer
35, the third source electrode 362 and the third drain electrode
361, and the second insulation layer 17. Since the drive transistor
300 is the bottom-gate structure, if the photosensitive transistor
is the photosensitive transistor 201 with the bottom-gate
structure, the third gate electrode 33 and the first gate electrode
13 may be at a same layer and made of a same material; the third
semiconductor layer 35 and the first semiconductor layer 15 may be
at a same layer and made of a same material; and the third source
electrode 362 and the third drain electrode 361 may be at a same
layer and made of a same material as the first source electrode 161
and the first drain electrode 162. If the photosensitive transistor
is the photosensitive transistor 202 with the top-gate structure,
the third semiconductor layer 35 and the second semiconductor layer
25 may be at a same layer and made of a same material; the third
source electrode 362 and the third drain electrode 361 may be at a
same layer and made of a same material as the second source
electrode 261 and the second drain electrode 262; and the third
gate electrode 33 may be disposed at the side of the first
insulation layer 14 away from the third semiconductor layer 35.
[0044] The array substrate 63 may further include the pixel
electrode 19. The pixel electrode 19 may be disposed at the side of
the second insulation layer 17 away from the third source electrode
362 and the third drain electrode 361. If the photosensitive
transistor 202 is a top-gate structure, the pixel electrode 19 and
the second gate electrode 23 may be disposed at a same layer or may
be disposed at a same layer and made of a same material. Certain
structures may have the photosensitive transistor 201/202 and the
drive transistor 300 disposed at a same layer and made of a same
material, which may be beneficial to simplify the fabrication
process of the array substrate 63 and improve the fabrication
efficiency of the array substrate 63.
[0045] It should be noted that, in the present disclosure, certain
structures having the photosensitive transistor 201/202 and the
drive transistor 300 disposed at a same layer and made of a same
material may only provide a desirable manner, and different
structures in a same film layer of the array substrate 63 may be
made of different fabrication materials, which may not be limited
in the present disclosure and may be adjusted according to
requirements.
[0046] FIG. 5 illustrates a schematic of a circuit for monitoring
the backlight brightness according to embodiments of the present
disclosure. Referring to FIGS. 2-5, optionally, the array substrate
63 may further include a data signal line 9 which is disposed at a
same layer as the third drain electrode 361. The third drain
electrode 361 and the first drain electrode 162 or the second drain
electrode 262 may all be connected to the data signal line 9.
[0047] For example, the array substrate 63 may further include the
data signal line 9. In order to facilitate the fabrication of the
array substrate 63, the data signal line 9 may be disposed at a
same layer as the third drain electrode 361. The drive transistor
300 and the photosensitive transistor 201 with the bottom-gate
structure may both be electrically connected to the data signal
line 9. For example, the third drain electrode 361 of the drive
transistor 300 and the first drain electrode 162 of the
photosensitive transistor 201 may be electrically connected to the
data signal line 9. Or, the drive transistor 300 and the
photosensitive transistor 202 with the top-gate structure may both
be electrically connected to the data signal line 9. For example,
the third drain electrode 361 of the drive transistor 300 and the
second drain electrode 262 of the photosensitive transistor 201 may
be electrically connected to the data signal line 9. That is, a
signal may be simultaneously transmitted to the drive transistor
300 and the photosensitive transistor 201/202 through one data
signal line, which may further simplify the film layer structure of
the array substrate 63 without affecting the signal transmission.
It should be noted that the structural schematic of the film layer
related to the data signal line 9 may refer to subsequent drawings
of the present disclosure.
[0048] FIG. 6 illustrates another schematic of a circuit for
monitoring the backlight brightness according to embodiments of the
present disclosure. Referring to FIGS. 2-6, optionally, the array
substrate 63 may further include the data signal line 9 and a power
voltage signal line 7. The data signal line 9 and the power voltage
signal line 7 may both be disposed at a same layer as the third
drain electrode 361. The data signal line 9 may be electrically
connected to the third drain electrode 361, and the first drain
electrode 162 or the second drain electrode 262 may be electrically
connected to the power voltage signal line 7.
[0049] For example, the array substrate 63 may further include both
the data signal line 9 and the power voltage signal line 7. At this
point, the data signal line 9 and the power voltage signal line 7
may both be disposed at a same layer as the third drain electrode
361 of the drive transistor 300, which may simplify the film layer
structure of the array substrate 63 to a certain extent. Currently,
an electrical signal may be transmitted to the drive transistor 300
through the data signal line 9 and the third drain electrode 361;
an electrical signal may be transmitted to the photosensitive
transistor 201 with the bottom-gate structure through the
electrical connection between the power voltage signal line 7 and
the first drain electrode 162; or an electrical signal may be
transmitted to the photosensitive transistor 202 with the top-gate
structure through the electrical connection between the power
voltage signal line 7 and the second drain electrode 262. It should
be noted that the structural schematic of the film layer related to
the data signal line 9 and the power voltage signal line 7 may
refer to subsequent drawings of the present disclosure.
[0050] FIG. 7 illustrates a structural schematic of a film layer of
a switch transistor in the display module according to embodiments
of the present disclosure. Referring to FIGS. 2-4 and FIG. 7,
optionally, the array substrate 63 may further include a switch
transistor 400. The switch transistor 400 may include a fourth gate
electrode 43, the first insulation layer 14, a fourth semiconductor
layer 45, a fourth source electrode 462 and a fourth drain
electrode 461, and the second insulation layer 17. The fourth gate
electrode 43 and the third gate electrode 33 may be fabricated at a
same layer and with a same material; the fourth semiconductor layer
45 and the third semiconductor layer 35 may be fabricated at a same
layer and with a same material; and the fourth source electrode
462, the fourth drain electrode 461, and the third source electrode
362 may be fabricated at a same layer and with a same material.
[0051] For example, the array substrate 63 may further include the
switch transistor 400. The switch transistor 400 shown in the
present disclosure may be a bottom-gate structure and include the
fourth gate electrode 43, the fourth semiconductor layer 45, the
fourth source electrode 462 and the fourth drain electrode 461. The
first insulation layer 14 may be disposed between the fourth gate
electrode 43 and the fourth semiconductor layer 45; and the second
insulation layer 17 may be disposed at the side of the fourth
source electrode 462 and the fourth drain electrode 461 away from
the fourth semiconductor layer 45. The fourth gate electrode 43 of
the switch transistor 400 and the third gate electrode 33 of the
drive transistor 300 may be fabricated at a same layer and with a
same material; the fourth semiconductor layer 45 and the third
semiconductor layer 35 of the drive transistor 300 may be
fabricated at a same layer and with a same material; and the fourth
source electrode 462 and the fourth drain electrode 461, and the
third source electrode 362 may be fabricated at a same layer and
with a same material. In such way, the fabrication process of the
drive transistor 300, the photosensitive transistor 201/202 and the
switch transistor 400 in the array substrate 63 may be simplified,
and the fabrication efficiency of the array substrate 63 may be
improved.
[0052] It should be noted that although the present disclosure only
shows the switch transistor 400 with the bottom-gate structure, the
switch transistor 400 may be set as the top-gate structure, or the
drive transistor 300 and the photosensitive transistor 202 may also
be set as the top-gate structure, which may be implemented by
adjusting the corresponding process. That is, whether the drive
transistor 300, the photosensitive transistor 201/202, and the
switch transistor 400 in the array substrate 63 have the top-gate
structure or the bottom-gate structure may not be limited in the
present disclosure, as long as the transistors may be combined to
monitor the luminous brightness of the light emitted from the
backlight module 20, which may timely and sensitively detect the
abnormal brightness of the backlight module 20, and timely provide
warning feedback of the display module 100 to users, thereby
avoiding the body damages and property losses of the users when a
hazardous problem occurs in a device corresponding to the display
module 100.
[0053] FIG. 8 illustrates another structural schematic of a film
layer in the display module according to embodiments of the present
disclosure; FIG. 9 illustrates another structural schematic of a
film layer in the display module according to embodiments of the
present disclosure; FIG. 10 illustrates another structural
schematic of a film layer in the display module according to
embodiments of the present disclosure; and FIG. 11 illustrates
another structural schematic of a film layer in the display module
according to embodiments of the present disclosure. Referring to
FIG. 5, FIG. 6, FIGS. 8-11, optionally, the array substrate 63 may
further include a reference signal line 18. The reference signal
line 18 and the first gate electrode 13 may be disposed at a same
layer, and the reference signal line 18 may be electrically
connected to the first gate electrode 13.
[0054] The orthographic projection of the reference signal line 18
on the plane of the first substrate 21 may at least partially
overlap the orthographic projection of the first source electrode
161 or the second source electrode 261 on the plane of the first
substrate 21; and a first capacitor 50 may be formed between the
reference signal line 18 and the first source electrode 161 or the
second source electrode 261. Or, the orthographic projection of the
reference signal line 18 on the plane of the first substrate 21 may
at least partially overlap the orthographic projection of the
fourth source electrode 462 on the plane of the first substrate 21;
and the first capacitor 50 may be formed between the reference
signal line 18 and the fourth source electrode 462.
[0055] For example, the array substrate 63 may further include the
reference signal line 18. When the photosensitive transistor 201 is
the bottom-gate structure, the reference signal line 18 and the
first gate electrode 13 may be disposed at a same layer, and the
reference signal line 18 may be electrically connected to the first
gate electrode 13; the orthographic projection of the reference
signal line 18 on the plane of the first substrate 21 may need to
at least partially overlap the orthographic projection of the first
source electrode 161 on the plane of the first substrate 21,
thereby forming the first capacitor 50 through the overlapped
portion of the reference signal line 18 and the first source
electrode 161, where the first capacitor 50 may be used to store
charges transferred by the photosensitive transistor 201/202 when
the power is turned on. When the photosensitive transistor 202 is
the top-gate structure, the reference signal line 18 and the second
gate electrode 23 may still be disposed at a same layer, and the
reference signal line 18 may be electrically connected to the
second gate electrode 23; the first capacitor 50 may be formed by
the overlapped portion between the reference signal line 18 and the
second source electrode 261, and may be used to store charges
transferred by the photosensitive transistor 201/202 when the power
is turned on.
[0056] Furthermore, the orthographic projection of the reference
signal line 18 on the plane of the first substrate 21 may be
disposed to at least partially overlap the orthographic projection
of the fourth source electrode 462 on the plane of the first
substrate 21, thereby forming the first capacitor 50 through the
overlapped portion of the reference signal line 18 and the fourth
source electrode 462 of the switch transistor 400, where the first
capacitor 50 may be used to store charges transferred by the
photosensitive transistor 201/202 when the power is turned on.
[0057] Three formation manners of the first capacitor 50 are
provided in the above-mentioned embodiments, and the formation
manner of the first capacitor 50 in the array substrate 63 may be
determined according to actual requirements. In other cases, other
formation manners may also be used, which may not be limited
according to the embodiments of the present disclosure, and the
above-mentioned embodiments may only be provided for reference.
[0058] FIG. 5 illustrates a schematic of a circuit for monitoring
the backlight brightness according to embodiments of the present
disclosure. Referring to FIG. 1 and FIG. 5, optionally, the display
module 100 may include the circuit for monitoring the backlight
brightness and at least one drive chip 61. The circuit for
monitoring the backlight brightness may include a photosensitive
circuit 51 and a signal processing circuit 52, which are
electrically connected to each other. The photosensitive circuit 51
may include the photosensitive unit 12, and the signal processing
circuit 52 may be disposed in the drive circuit 61.
[0059] For example, the display module 100 may further include the
circuit for monitoring the backlight brightness and at least one
drive chip 61. The circuit for monitoring the backlight brightness
may include the photosensitive circuit 51 and the signal processing
circuit 52, which are electrically connected to each other. The
photosensitive circuit 51 may be used to sense the luminous
brightness of the light emitted from the backlight module 20, and
the signal processing circuit 52 may be used to receive the
electrical signal of the photosensitive unit 12 outputted from the
photosensitive circuit 51. The signal processing circuit 52 may be
disposed in the drive chip 61 and may determine whether the
luminous brightness of the backlight module 20 is normal by
analyzing the change of the electrical signal. When the luminous
brightness of the backlight module 20 is abnormal, the electrical
signal may also fluctuate differently from a normal level. When the
luminous brightness is abnormal, warning feedback of the display
module 100 may be timely provided to users, thereby avoiding the
body damages and property losses of the users when a hazardous
problem occurs in a device corresponding to the display module 100.
It should be noted that the photosensitive unit 12 may include the
photosensitive transistor 201/202, so only the photosensitive
transistor 201/202 may be shown in FIG. 5 for reference.
[0060] FIG. 6 illustrates another schematic of a circuit for
monitoring the backlight brightness according to embodiments of the
present disclosure. Referring to FIG. 6 and FIGS. 8-11, optionally,
the photosensitive unit 12 may include the photosensitive
transistor 201/202; the photosensitive circuit 51 may include the
photosensitive transistor 201/202, the first capacitor 50, the
switch transistor 400, and a first output terminal. A control
terminal of the photosensitive transistor 201/202 may be connected
to the reference signal line 18 and a first terminal 181 of the
first capacitor 50; an input terminal of the photosensitive
transistor may be connected to the data signal line 9 or the power
voltage signal line 7, and an output terminal of the photosensitive
transistor may be connected to a second terminal 182 of the first
capacitor 50; the second terminal 182 of the first capacitor 50 may
also be connected to the fourth source electrode 462 of the switch
transistor 400; the fourth drain electrode 461 of the switch
transistor 400 may be connected to the first output terminal, and
the fourth gate electrode 43 of the switch transistor 400 may be
connected to a control signal terminal 62; and the first output
terminal may be connected to the signal processing circuit 52. It
should be noted that the photosensitive unit 12 may include the
photosensitive transistor 201/202, so only the photosensitive
transistor 201/202 may be shown in FIG. 6 for reference.
[0061] For example, it should be noted that the above-mentioned
control terminal of the photosensitive transistor 201/202 may be
the first gate electrode 13 or the second gate electrode 23 of the
photosensitive transistor 201/202; the input terminal of the
photosensitive transistor 201/202 may be the first drain electrode
162 or the second drain electrode 262 of the photosensitive
transistor 201/202; and the output terminal of the photosensitive
transistor 201/202 may be the first source electrode 161 or the
second source electrode 261 of the photosensitive transistor
201/202.
[0062] The photosensitive circuit 51 may include the photosensitive
transistor 201/202, the first capacitor 50, the switch transistor
400, and the first output terminal. When the photosensitive
transistor 201 is the bottom-gate structure and also when only the
data signal line 9 is disposed in the circuit and the power voltage
signal line 7 is not disposed in the circuit, the first source
electrode 161 of the photosensitive transistor 201 and the third
source electrode 362 of the drive transistor 300 may both be
disposed at a same layer as the data signal line 9 and be
electrically connected to the data signal line 9; the first gate
electrode 13 of the photosensitive transistor 201 may be connected
to the reference signal line 18 and the first terminal 181 of the
first capacitor 50; the first drain electrode 162 of the
photosensitive transistor 201 may be connected to the second
terminal 182 of the first capacitor 50; the second terminal 182 of
the first capacitor 50 may also be connected to the fourth source
electrode 462 of the switch transistor 400; and the fourth drain
electrode 461 of the switch transistor 400 may be connected to the
first output terminal of the photosensitive circuit 51.
[0063] When the photosensitive transistor 201 is the bottom-gate
structure, and the data signal line 9 and the power voltage signal
line 7 are only disposed in the circuit, the first source electrode
161 of the photosensitive transistor 201 may be disposed at a same
layer as the power voltage signal line 7 and be electrically
connected to the power voltage signal line 7; the third source
electrode 362 of the photosensitive transistor 201 may be disposed
at a same layer as the data signal line 9 and be electrically
connected to the data signal line 9; and other wiring manners may
be the same as the above-mentioned embodiments.
[0064] When the photosensitive transistor 202 is the top-gate
structure and also when only the data signal line 9 is disposed in
the circuit and the power voltage signal line 7 is not disposed in
the circuit, the second source electrode 261 of the photosensitive
transistor 202 may be disposed at a same layer as the power voltage
signal line 7 and be electrically connected to the power voltage
signal line 7; the third source electrode 362 of the drive
transistor 300 may be disposed at a same layer as the data signal
line 9 and be electrically connected to the data signal line 9; the
second gate electrode 23 of the photosensitive transistor 202 may
be connected to the reference signal line 18 and the first terminal
181 of the first capacitor 50; the second drain electrode 262 of
the photosensitive transistor 202 may be connected to the second
terminal 182 of the first capacitor 50; the second terminal 182 of
the first capacitor 50 may be connected to the fourth source
electrode 462 of the switch transistor 400; and the fourth drain
electrode 461 of the switch transistor 400 may be connected to the
first output terminal of the photosensitive circuit 51.
[0065] When the photosensitive transistor 202 is the top-gate
structure, and the data signal line 9 and the power voltage signal
line 7 are only disposed in the circuit, the second source
electrode 261 of the photosensitive transistor 202 and the third
source electrode 362 of the drive transistor 300 may both be
disposed at a same layer as the data signal line 9 and be
electrically connected to the data signal line 9; and other wiring
manners may be the same as the above-mentioned embodiments.
[0066] The first output terminal of the photosensitive circuit 51
may be electrically connected to the signal processing circuit 52.
The signal processing circuit 52 may be used to receive an
electrical signal of the photosensitive unit 12 outputted from the
photosensitive circuit 51. The signal processing circuit 52 may
determine whether the luminous brightness of the backlight module
20 is normal by analyzing the change of the electrical signal. When
the luminous brightness of the backlight module 20 is abnormal, the
electrical signal may also fluctuate differently from a normal
level. When the luminous brightness is abnormal, warning feedback
of the display module 100 may be timely provided to users.
[0067] Referring to FIG. 5 or FIG. 6, optionally, the signal
processing circuit 52 may be an integration circuit. The signal
processing circuit 52 disposed in the drive circuit 61 may be the
integration circuit in the present disclosure. An electrical signal
transmitted from the photosensitive circuit 51 may be received by
the integration circuit, thereby more sensitively and accurately
monitoring the abnormal situation of the luminous brightness of the
backlight module 20.
[0068] Referring to FIG. 5 or FIG. 6, optionally, the signal
processing circuit 52 may at least include a second capacitor 556,
an amplifier 789, a second input terminal, a ground terminal 60,
and a second output terminal. The second input terminal and the
first output terminal may be connected to each other. The second
input terminal may be connected to a first terminal 55 of the
second capacitor 556 and a first terminal 58 of the amplifier 789.
A second terminal 59 of the amplifier 789 may be connected to the
ground terminal 60, and a third terminal 57 of the amplifier 789
may be connected to the second terminal 56 of the second capacitor
556 and the second output terminal.
[0069] For example, the signal processing circuit 52 (the
integration circuit) may include the second input terminal. The
second input terminal may be electrically connected to the first
output terminal of the photosensitive circuit 51. The second input
terminal may further be connected to the first terminal 55 of the
second capacitor 556 and the first terminal 58 of the amplifier
789. The second terminal 59 of the amplifier 789 may be connected
to the ground terminal 60, and the third terminal 57 of the
amplifier 789 may be connected to the second terminal 56 of the
second capacitor 556 and the second output terminal. The second
output terminal may be connected to the drive chip 61. In such way,
an electrical signal transmitted from the photosensitive circuit 51
may be received by the integration circuit through the drive chip
61, thereby more sensitively and accurately monitoring the abnormal
situation of the luminous brightness of the backlight module
20.
[0070] Referring to FIG. 5 or FIG. 6, optionally, the display
module may further include a pixel drive circuit 53. The pixel
drive circuit 53 may include the drive transistor 300 and a
light-emitting element 403. The third drain electrode 361 of the
drive transistor 300 may be connected to the data signal line 9,
the third source electrode 362 of the drive transistor 300 may be
connected to the light-emitting element 403, and the third gate
electrode 33 of the drive transistor 300 may be connected to the
control signal terminal 62.
[0071] For example, the display module 100 may further include the
pixel drive circuit 53. The pixel drive circuit 53 may include the
drive transistor 300 and the light-emitting element 403 which may
be a light-emitting device in the backlight module 20. The third
drain electrode 361 of the drive transistor 300 may be connected to
the data signal line 9 and receive an electrical signal through the
data signal line 9. The third source electrode 362 of the drive
transistor 300 may be connected to the light-emitting element 403,
and the third gate electrode 33 may be connected to the control
signal terminal 62 to receive a control signal.
[0072] FIG. 12 illustrates a flow chart of a method for monitoring
backlight brightness according to embodiments of the present
disclosure. Referring to FIG. 1, FIG. 5, FIG. 6 and FIG. 12, based
on the same concept, the present disclosure further provides a
method for monitoring the backlight brightness of the display
module 100. The method for monitoring the backlight brightness may
include a photo-sensing phase and a detection phase.
[0073] At step 301, which is the photo-sensing phase, the
photosensitive unit 12 may receive light from the backlight module
20; the data signal line 9 or the power voltage signal line 7 may
input a drive signal to the photosensitive transistor; the
photosensitive unit 12 may convert an optical signal to an
electrical signal and transmit the electrical signal to the first
capacitor 50 connected in parallel with the photosensitive unit
12.
[0074] At step 302, which is the detection phase, a control signal
may be transmitted to the fourth gate electrode 43 of the switch
transistor 400 to enable the switch transistor 400 to be
conducting, and the first capacitor 50 may transmit the stored
electrical signal to the signal processing circuit 52 through the
switch transistor 400.
[0075] For example, the present disclosure further provides the
method, used for the display module 100, for monitoring the
backlight brightness of the display module 100. The method for
monitoring the backlight brightness may at least include the
photo-sensing phase of step 301 and the detection phase of step
302. At the photo-sensing phase of step 301, the photosensitive
unit 12 in the photosensitive circuit 51 may receive the light
emitted from the backlight module 20; the data signal line 9 or the
power voltage signal line 7 may input a signal to the
photosensitive transistor 201/202; an optical signal emitted from
the backlight module 20 may be converted to an electrical signal
through the photosensitive unit 12 and the electrical signal
received by the photosensitive transistor 201/202 may be
transmitted to the first capacitor 50 connected in parallel with
the photosensitive unit 12; and the first capacitor 50 may be used
to store charges transmitted by the photosensitive transistor
201/202. It should be noted that the photosensitive unit 12 may
include the photosensitive transistor 201/202, so only the
photosensitive transistor 201/202 may be shown in FIG. 5 for
reference.
[0076] The fourth gate electrode 43 may also be electrically
connected to the control signal terminal 62. At the detection phase
of step 302, a control signal may be transmitted to the fourth gate
electrode 43 of the switch transistor 400 to enable the switch
transistor 400 to be conducting. At this point, the charges stored
in the first capacitor 50 may be transmitted to the signal
processing circuit 52 through the switch transistor 400. In such
way, the electrical signal transmitted from the photosensitive
circuit 51 may be received by the integration circuit through the
drive chip 61, thereby more sensitively and accurately monitoring
the abnormal situation of the luminous brightness of the backlight
module 20.
[0077] Referring to FIG. 5, FIG. 6 and FIG. 12, optionally, the
method for monitoring the backlight brightness may further include
a resetting phase of step 303. At the resetting phase of step 303,
a control signal may be transmitted to the fourth gate electrode 43
of the switch transistor 400 to enable the switch transistor 400 to
be cutoff, and the charges in the first capacitor 50 may be
cleared.
[0078] For example, the method for monitoring the backlight
brightness may further include the resetting phase of step 303. At
the resetting phase of step 303, the control signal may be
transmitted to the fourth gate electrode 43 of the switch
transistor 400 to enable the switch transistor 400 to be cutoff. At
this point, the charges originally stored in the first capacitor 50
may be cleared to wait for the execution of a next charge storage
operation, that is, wait for a next detection.
[0079] Optionally, the display module 100 may further include a
system host. At the detection phase of step 302, the signal
processing circuit 52 may detect a voltage change value of the
signal processing circuit. When the change value of the voltage is
less than a preset value, the display module 100 may send a
reminder of abnormal brightness to the system host.
[0080] For example, the display module 100 may further include the
system host. At the detection phase of step 302, the signal
processing circuit 52 may, by continuously detecting the voltage
change, determine whether the luminous brightness of the backlight
module 20 is normal according to the magnitude of the voltage value
change. When a certain voltage value is less than a preset value,
it may indicate that the luminous brightness, which is detected by
the photosensitive transistor, of a position corresponding to the
backlight module 20 may be insufficient at this point. Currently,
there may be a problem in the corresponding system, and the display
module 100 may send a reminder of abnormal brightness to the system
host, which may avoid user losses caused by the product problem
corresponding to the system. Obviously, a certain voltage value is
less than a preset value may not be the only case; when a deviation
between a detected voltage and a normal voltage is greater than a
preset value, the luminous brightness of a position corresponding
to the backlight module 20 may be too large. At this point, there
may also be a problem in the corresponding system, and the display
module 100 may send a reminder of abnormal brightness to the system
host, which may avoid user losses caused by the product problem
corresponding to the system.
[0081] From the above-mentioned embodiments, it can be seen that
the display module and the method for monitoring the backlight
brightness provided by the present disclosure may achieve at least
the following beneficial effects.
[0082] In the present disclosure, at least one photosensitive unit
may be disposed in the array substrate, and the luminous brightness
of the backlight module may be directly monitored by disposing the
photosensitive surface of the photosensitive unit toward the
light-exiting surface of the backlight module, thereby directly
monitoring the abnormal light-exiting case of the backlight module,
which may be beneficial to improve the monitoring effect of the
abnormal brightness of the backlight module and also ensure the
safe use of the device corresponding to the backlight module.
[0083] Although the embodiments of the present disclosure have been
described in detail through certain examples, those skilled in the
art should understand that the above-mentioned examples may merely
for illustration and may not be intended to limit the scope of the
present disclosure. Those skilled in the art should understand that
the above-mentioned embodiments may be modified without departing
from the scope and spirit of the present disclosure, and the scope
of the disclosure may be determined by the scope of the appended
claims.
* * * * *