U.S. patent application number 16/887096 was filed with the patent office on 2021-05-06 for data transmission devices with efficient ternary-based data transmission capability and methods of operating same.
The applicant listed for this patent is Samsung Electronics Co., Ltd.. Invention is credited to Young-Hwa Kim.
Application Number | 20210135910 16/887096 |
Document ID | / |
Family ID | 1000005535216 |
Filed Date | 2021-05-06 |
![](/patent/app/20210135910/US20210135910A1-20210506\US20210135910A1-2021050)
United States Patent
Application |
20210135910 |
Kind Code |
A1 |
Kim; Young-Hwa |
May 6, 2021 |
DATA TRANSMISSION DEVICES WITH EFFICIENT TERNARY-BASED DATA
TRANSMISSION CAPABILITY AND METHODS OF OPERATING SAME
Abstract
A data transmission device includes first and second lines, and
a transmitter configured to convert received binary data into
ternary data and output the ternary data onto the first and second
lines by toggling only one of the first and second lines during
each of a plurality of consecutive 2-bit data transmission time
intervals. A receiver is also provided, which is configured to
receive the ternary data from the first and second lines and
convert the received ternary data into binary data. The transmitter
is configured to output the ternary data onto the first and second
lines using return-to-zero toggling during each of the 2-bit data
transmission time intervals.
Inventors: |
Kim; Young-Hwa;
(Hwaseong-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Electronics Co., Ltd. |
Suwon-si |
|
KR |
|
|
Family ID: |
1000005535216 |
Appl. No.: |
16/887096 |
Filed: |
May 29, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H04L 25/4917 20130101;
H04L 25/0272 20130101; H04L 25/028 20130101 |
International
Class: |
H04L 25/49 20060101
H04L025/49; H04L 25/02 20060101 H04L025/02 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 5, 2019 |
KR |
10-2019-0140135 |
Claims
1. A data transmission device, comprising: first and second lines;
a transmitter configured to convert received binary data into
ternary data and output the ternary data onto the first and second
lines by toggling only one of the first and second lines during
each of a plurality of consecutive 2-bit data transmission time
intervals; and a receiver configured to convert the ternary data
received from the first and second lines into binary data.
2. The device of claim 1, wherein the transmitter is configured to
output the ternary data onto the first and second lines using
return-to-zero toggling during each of the 2-bit data transmission
time intervals.
3. The device of claim 1, wherein the transmitter is configured to
output each bit of the ternary data as a logic value within a group
consisting of: -1, corresponding to a first voltage level, 0,
corresponding to a second voltage level, and 1, corresponding to a
third voltage level.
4. The device of claim 3, wherein the first voltage level is less
than the second voltage level, which is less than the third voltage
level.
5. The device of claim 3, wherein the receiver is configured to
convert four distinct combinations of the ternary data into
respective ones of the following pairs of logic states: (0,0).
(0,1), (1,0) and (1,1).
6. The device of claim 5, wherein the receiver comprises a decoder,
which is configured to produce the binary data by performing an
exclusive NOR operation on each of the pairs of logic states.
7. A method of transmitting data, comprising: converting two
consecutive bits of serially-received binary data into ternary
data, which is provided onto a pair of signal lines using a
return-to-zero toggling operation that is applied to only one of
the pair of signal lines during each of a plurality of consecutive
2-bit data transmission time intervals; and decoding the ternary
data received on the pair of signal lines into binary data.
8. The method of claim 7, wherein during each of the 2-bit data
transmission time intervals only a first one of the pair of signal
lines is driven at a +1 or -1 logic level while a second one of the
pair of signal lines is driven at a reference logic level.
9. The method of claim 8, wherein during said decoding, four
distinct combinations of the ternary data are converted into
respective ones of the following pairs of logic states: (0,0).
(0,1), (1,0) and (1,1).
10. The method of claim 7, wherein during said decoding, four
distinct combinations of the ternary data are converted into
respective ones of the following pairs of logic states: (0,0).
(0,1), (1,0) and (1,1).
11. A data transmission device, comprising: a first line; a second
line; a transmitter configured to receive binary data, to convert
the binary data into ternary data, and to output the converted
ternary data to the first line and the second line; and a receiver
configured to receive the ternary data through the first line and
the second line and to convert the received ternary data into the
binary data, wherein one of the first and second lines is not
toggled when the ternary data are transmitted to the first and
second lines.
12. The data transmission device of claim 11, wherein the ternary
data are transmitted in a return-to-zero manner.
13. The data transmission device of claim 11, wherein the ternary
data are represented as one of `-1,` `0,` and `1,` the ternary data
has a first level when the ternary data are `-1,` the ternary data
has a second level when the ternary data are `0,` and the ternary
data has a third level when the ternary data are `2.`
14. The data transmission device of claim 13, wherein the first
level is lower than the second level, the third level is lower than
the second level, and the second level is a level of a reference
voltage.
15. The data transmission device of claim 11, wherein the
transmitter comprises an encoder configured to receive the binary
data and to encode the received binary data into the ternary
data.
16. The data transmission data of claim 11, wherein the transmitter
comprises: a first transistor having a drain, connected to a power
supply terminal, and a gate receiving a first bit of the binary
data; a second transistor having a drain, connected to a source of
the first transistor, and a gate receiving an inverted version of
the first bit; a third transistor having a drain connected to a
source of the second transistor, a source connected to a ground
terminal, and a gate receiving an enable signal; a fourth
transistor having a drain, connected to the source of the first
transistor, and a gate receiving an inverted version of a second
bit of the binary data; a fifth transistor having a drain connected
to a source of the fourth transistor, a source connected to the
first line, and a gate receiving the enable signal; a sixth
transistor having a drain, connected to the source of the first
transistor, and a gate receiving the second bit; and a seventh
transistor having a drain connected to a source of the sixth
transistor, a source connected to the second line, and a gate
receiving the enable signal.
17. The data transmission device of claim 16, wherein the
transmitter further comprises: a first switch configured to provide
a precharge voltage to the first line in response to a precharge
signal; and a second switch configured to provide the precharge
voltage to the second line in response to the precharge signal.
18. The data transmission device of claim 11, wherein the receiver
comprises: a first comparator configured to compare a voltage of
the first line and a voltage of the second line with each other in
response to a clock signal; a second comparator configured to
compare a common voltage of the first and second lines and a
reference voltage with each other in response to the clock signal;
and a decoder configured to receive a first comparison voltage of
the first comparator and a second comparison voltage of the second
comparator and to output a first bit and a second bit of the binary
data.
19. The data transmission device of claim 18, wherein the decoder
calculates the first comparison voltage and the first comparison
voltage to output the first bit.
20. (canceled)
21. The data transmission device of claim 18, wherein the decoder
comprises: a first inverter connected to an output terminal of the
second comparator and configured to invert the second comparison
voltage; a second inverter configured to invert an output value of
the first inverter to output the second bit; a third inverter
connected to an output terminal of the first comparator and
configured to invert the first comparison voltage; a fourth
inverter connected to an output terminal of the second comparator
and configured to invert the second comparison voltage; an eighth
transistor having a drain connected to the output terminal of the
first comparator, a source connected to a first data line, and a
gate receiving the second comparison voltage; a ninth transistor
having a source connected to the output terminal of the first
comparator, a drain connected to the first data line, and a gate
connected to an output terminal of the fourth inverter; a tenth
transistor having a drain connected to an output terminal of the
third inverter, a source connected to the first data line, and a
gate connected to an output terminal of the fourth inverter; an
eleventh transistor having a source connected to an output terminal
of the third inverter, a drain connected to the first data line,
and a gate receiving the second comparison voltage; and a twelfth
transistor having a drain connected to the first data line, a
source connected to a ground terminal, and a gate receiving an
inverted version of the clock signal.
22.-30. (canceled)
Description
REFERENCE TO PRIORITY APPLICATION
[0001] This application claims the benefit of Korean Patent
Application No. 10-2019-0140135, filed Nov. 5, 2019 in the Korean
Intellectual Property Office, the disclosure of which is hereby
incorporated herein by reference.
BACKGROUND
[0002] The present disclosure relates to data transmission devices,
including integrated circuit memory devices, and methods of
operating same.
[0003] In general, a semiconductor memory device, which has been
widely used in a high-performance electronic system, is increasing
in capacity and speed. As an example of a semiconductor memory
device, a dynamic random-access memory (DRAM) is a volatile memory
and determines data based on charged stored in a capacitor.
SUMMARY
[0004] Example embodiments provide a data transmission device with
reduced power consumption, a memory device including the data
transmission device, and an operating method of the data
transmission device.
[0005] According to some embodiments of the invention, a data
transmission device includes first and second lines, and a
transmitter, which is configured to convert received binary data
into ternary data and output the ternary data onto the first and
second lines by toggling only one of the first and second lines
during each of a plurality of consecutive 2-bit data transmission
time intervals. A receiver is also provided, which is configured to
convert the ternary data received from the first and second lines
back into binary data.
[0006] In some of these embodiments, the transmitter may be
configured to output the ternary data onto the first and second
lines using return-to-zero toggling during each of the 2-bit data
transmission time intervals. In addition, the transmitter may be
configured to output each bit of the ternary data as a logic value
within a group consisting of: -1, corresponding to a first voltage
level, 0, corresponding to a second voltage level, and 1,
corresponding to a third voltage level. In some embodiments, the
first voltage level is less than the second voltage level, which is
less than the third voltage level.
[0007] The receiver may also be configured to convert four distinct
combinations of the ternary data into respective ones of the
following pairs of logic states: (0,0). (0,1), (1,0) and (1,1).
Moreover, the receiver may include a decoder, which is configured
to produce the binary data by performing an exclusive NOR operation
on each of the pairs of logic states.
[0008] According to further embodiments of the invention, a method
of transmitting data may include: (i) converting two consecutive
bits of serially-received binary data into ternary data, which is
provided onto a pair of signal lines using a return-to-zero
toggling operation that is applied to only one of the pair of
signal lines during each of a plurality of consecutive 2-bit data
transmission time intervals, and then (ii) decoding the ternary
data received on the pair of signal lines into binary data. And,
during each of the 2-bit data transmission time intervals, only a
first one of the pair of signal lines is driven at a +1 or -1 logic
level while a second one of the pair of signal lines is driven at a
reference logic level.
[0009] According to an additional embodiment, a data transmission
device includes a first line, a second line, a transmitter
configured to receive binary data, to convert the binary data into
ternary data, and to output the converted ternary data to the first
line and the second line. A receiver is also provided, which is
configured to receive the ternary data through the first line and
the second line and to convert the received ternary data into the
binary data. In some of these embodiments, one of the first and
second lines is not toggled when the ternary data are transmitted
to the first and second lines.
[0010] According to another example embodiment, a memory device
includes: a first transistor having a drain, connected to a power
supply terminal, and a gate connected to a first local input/output
line, a second transistor having a drain, connected to a source of
the first transistor, and a gate connected to an inverted version
of the first local input/output line, a third transistor having a
drain connected to a source of the second transistor, a source
connected to a ground terminal, and a gate receiving a local sense
amplifier enable signal, a fourth transistor having a drain,
connected to the source of the first transistor, and a gate
connected to an inverted version of a second local input/output
line, a fifth transistor having a drain connected to a source of
the fourth transistor, a source connected to a first global
input/output line, and a gate receiving the local sense amplifier
enable signal, a sixth transistor having a drain, connected to the
source of the first transistor, and a gate connected to a second
local input/output line, and a seventh transistor having a drain
connected to a source of the sixth transistor, a source connected
to a second global input/output line, and a gate receiving the
local sense amplifier enable signal.
[0011] According to yet another embodiment, a data transmission
operating method includes converting binary data into ternary data
using a code map in a transmitter and transmitting the converted
ternary data through two lines in the transmitter. The code map
maps the ternary data, corresponding to the binary data, using
states in which the lines are not toggled simultaneously.
BRIEF DESCRIPTION OF DRAWINGS
[0012] The above and other aspects, features, and advantages of the
present disclosure will be more clearly understood from the
following detailed description, taken in conjunction with the
accompanying drawings.
[0013] FIG. 1 illustrates a data transmission device according to
an example embodiment.
[0014] FIG. 2 illustrates data transmitted to two lines in a
non-toggle case according to an example embodiment.
[0015] FIG. 3 illustrates a transmitter according to an example
embodiment.
[0016] FIG. 4 illustrates a receiver according to an example
embodiment.
[0017] FIG. 5 illustrates a ternary-to-binary (T-to-B) decoder in
FIG. 4.
[0018] FIG. 6 illustrates a table showing a decoding process of a
receiver according to an example embodiment.
[0019] FIG. 7 is a flowchart illustrating an operating method of a
transmitter according to an example embodiment.
[0020] FIG. 8 is a flowchart illustrating an operating method of a
receiver according to an example embodiment.
[0021] FIG. 9 illustrates a memory device according to another
example embodiment.
[0022] FIG. 10 is a detail view of a portion of a bank array
illustrated in FIG. 9.
[0023] FIG. 11 illustrates a bitline sense amplifier illustrated in
FIG. 10.
[0024] FIG. 12 illustrates a local sense amplifier circuit
illustrated in FIG. 11.
[0025] FIG. 13 illustrates ternary data transmitted to global
input/output lines according to an example embodiment.
[0026] FIG. 14 illustrates a transmitter for global input/output
line signaling according to an example embodiment.
[0027] FIG. 15 illustrates a receiver for global input/output line
signaling according to an example embodiment.
[0028] FIG. 16 illustrates a decoding table for a global
input/output line according to an example embodiment.
[0029] FIGS. 17A, 17B, 17C, and 17D illustrate examples of a code
map according to an example embodiment.
[0030] FIG. 18 illustrates a mobile device according to an example
embodiment.
DETAILED DESCRIPTION
[0031] Hereinafter, example embodiments will be described with
reference to the accompanying drawings.
[0032] FIG. 1 illustrates a data transmission device 100 according
to an example embodiment. Referring to FIG. 1, the data
transmission device 100 may include a transmitter 110 and a
receiver 120. The transmitter (TX) 110 may be configured to receive
binary data and to transmit a ternary code, corresponding to the
binary data, through two lines Q0 and Q1. The ternary code may be
represented by one of `-1,` `0`, and `1.` In an example embodiment,
when the ternary data are `-1,` the ternary data may have a first
level. When the ternary data are `0,` the ternary data may have a
second level. When the ternary data are `1,` the ternary data may
have a third level. The first level may be lower than the second
level, the third level may be higher than the second level, and the
second level may be a level of a reference voltage.
[0033] The transmitter 110 may include an encoder 114 receiving
binary data and outputting a ternary code, corresponding to the
binary data, using a code map. In an example embodiment, the code
map may be set so as not to transmit data that causes the two lines
Q0 and Q1 to simultaneously toggle.
[0034] The receiver (RX) 120 may be configured to receive a ternary
code through the two lines Q0 and Q1 and to output binary data
corresponding to the ternary code. The receiver 120 may include a
decoder 124 receiving a ternary code and outputting binary data,
corresponding to the ternary code, using a code map. The
transmitter 110 and the receiver 120, illustrated in FIG. 1, may be
implemented as a single integrated circuit, but this application is
not be limited thereto. The transmitter 110 and the receiver 120
may be implemented as corresponding integrated circuits,
respectively.
[0035] The data transmission device 100 according to an example
embodiment may convert two bits of binary data into ternary data,
and may transmit the converted ternary data to the two lines Q0, Q1
using a code map that supports a non-toggle case. Thus, the data
transmission device 100 may decrease the number of toggling
times.
[0036] FIG. 2 illustrates data transmitted to the two lines Q0 and
Q1 in a non-toggle case according to an example embodiment.
Referring to FIG. 2, when the first line Q0 has the same level as a
reference voltage VREF and the second line Q1 has a level lower
than the reference voltage VREF, two bits of binary data may
correspond to `00.` When the first line Q0 is the reference voltage
VREF, ternary data are `0.` When the second line Q1 has a lower
level than the reference voltage VREF, ternary data are `-1.` And,
when the first line Q0 has a lower level than the reference voltage
VREF and the second line Q1 has the same level as the reference
voltage VREF, two bits of binary data may correspond to `10.` And,
further, when the first line Q0 has the same level as the reference
voltage VREF and the second line Q1 has a higher level than the
reference voltage VREF, two bits of binary data may correspond to
`11.` When the second line Q1 has a higher level than the reference
voltage VREF, ternary data are `1.` Finally, when the first line Q0
has a higher level than the reference voltage VREF and the second
line Q1 has the same level as the reference voltage VREF, two bits
of binary data may correspond to `01.`
[0037] Data, transmitted in each of the two lines Q0 and Q1, may be
a return-to-zero (RZ) signaling signal, as illustrated in FIG. 2.
For example, a reset period RST is present after two bits of data
are transmitted using a ternary code. A level of the reset period
RST may be the level of the reference voltage VREF, but the present
disclosure is not necessarily limited thereto. The data,
transmitted in each of the two lines Q0 and Q1, may be a
non-return-to-zero (NRZ) signaling signal. It will be understood
that binary data, corresponding to ternary data non-toggled between
the two lines Q0 and Q1 illustrated in FIG. 2, is merely an
example.
[0038] FIG. 3 illustrates a transmitter 110 according to an example
embodiment. Referring to FIG. 3, the transmitter 110 may include
transistors T1 to T7 and switches SW1 and SW2. For ease of
description, in FIG. 3, it will be assumed that two bits of binary
data include a first data bit D0 and a second data bit D1.
[0039] A first transistor T1 may have a drain, connected to a power
supply terminal VDD, and a gate receiving the first data bit D0. A
second transistor T2 may have a drain connected to a source of the
first transistor T1, and a gate receiving an inverted version D0B
of the first data bit D0. A third transistor T3 may have a drain
connected to a source of the second transistor T2, a source
connected to a ground terminal GND, and a gate receiving an enable
signal EN. A fourth transistor T4 may have a drain, connected to a
source of the first transistor T1, and a gate receiving an inverted
version D1B of the second data bit D1. A fifth transistor T5 may
have a drain connected to a source of the fourth transistor T4, a
source connected to the first line Q0, and a gate receiving the
enable signal EN. A sixth transistor T6 may have a drain connected
to the source of the first transistor T1, and a gate receiving the
second data bit D1. A seventh transistor T7 may have a drain
connected to a source of the sixth transistor T6, a source
connected to the second line Q1, and a gate receiving the enable
signal EN.
[0040] The first switch SW1 may provide a precharge voltage VPRE to
the first line Q0 in response to a precharge signal P_PRE. The
second switch SW2 may provide the precharge voltage VPRE to the
second line Q1 in response to the precharge signal P_PRE. It will
be understood that the configuration of the transmitter 110,
illustrated in FIG. 3, is merely an example according to an
embodiment of the invention.
[0041] FIG. 4 illustrates a receiver 120 according to an example
embodiment. Referring to FIG. 4, the receiver 120 may include a
first comparator 121, a second comparator 122, and a T-to-B decoder
124 (i.e., ternary-to-binary decoder).
[0042] The first comparator 121 may be configured to compare a
voltage of a first line Q0 with a voltage of a second line Q1 and
to output a first comparison voltage F_DIFF. The first comparison
voltage F_DIFF may be a differential voltage. The first comparator
121 may be referred to as a differential latch (Q1-Q0).
[0043] The second comparator 122 may be configured to compare a
common voltage Q0+Q1/2 of the voltage of the first line Q0 and the
voltage of the second line Q1 with a reference voltage VREF and to
output a comparison voltage F_CM. When binary data are transmitted
using a ternary code, one of the voltage of the first line Q1 and
the voltage of the second line Q1 may be the reference voltage
VREF. In addition, the second comparison voltage F_CM may be a
common mode voltage. The second comparator 122 may be referred to
as a common mode detector ((Q0+Q1)/2). As shown, the first
comparator 121 and the second comparator 122 may be activated in
response to a clock signal CLK. The T-to-B decoder 124 may be
configured to receive a first comparison voltage F_DIFF and a
second comparison voltage F_CM and to output corresponding binary
data to the first data line D0 and the second data line D1.
[0044] FIG. 5 illustrates the T-to-B decoder 124 in FIG. 4.
Referring to FIG. 5, the T-to-B decoder 124 may include inverters
INV1 to INV4 and transistors T8 to T12. A first inverter INV1 may
receive a second comparison voltage V_CM and may invert a second
comparison voltage V_CM. A second inverter INV2 may invert an
output value of the first inverter INV1 and may transmit the
inverted output value to a first data line D0. A third inverter
INV3 may invert a first comparison voltage F_DIFF. A fourth
inverter INV4 may invert a second comparison voltage F_CM. An
eighth transistor T8 may have a drain receiving the first
comparison voltage F_DIFF, a source connected to a second data line
D1, and a gate receiving the second comparison voltage F_CM. A
ninth transistor T9 may have a source receiving the first
comparison voltage F_DIFF, a drain connected to the second data
line D1, and a gate receiving an output value of the fourth
inverter INV4. A tenth transistor T10 may have a drain receiving an
output value of the third inverter INV3, a source connected to the
second data line D1, and a gate receiving an output value of the
fourth inverter INV4. An eleventh transistor T11 may have a source
receiving an output value of the third inverter INV3, a drain
connected to the second data line D1, and a gate receiving the
second comparison voltage F_CM. A twelfth transistor 12 may have a
drain connected to the second data line D1, a source connected to
the ground terminal GND, and a gate receiving an inverted version
CLKB of a clock CLK.
[0045] In an example embodiment, each of the eighth, tenth, and
twelfth transistors T8, T10, and T12 may include an n-channel
metal-oxide-silicon (NMOS) field effect transistor (FET), whereas
each of the ninth and eleventh transistors T9 and T11 may include a
p-channel metal-oxide-silicon (PMOS) field effect transistor (FET),
as shown.
[0046] FIG. 6 illustrates a table showing a decoding process of a
receiver 120 according to an example embodiment. Referring to FIG.
6, a bit of a first data line D0 may be a value corresponding to
the second comparison voltage F_CM, and a bit of a second data line
D1 may be a value obtained by performing an XNOR operation on a
first comparison voltage F_DIFF and a second comparison F_CM.
[0047] When a code value of a first line Q0 is `1` and a code value
of a second line Q1 is `0,` a value of the first comparison voltage
F_DIFF is `0` and a value of the second comparison voltage F_CM is
`1.` Accordingly, the decoded binary data (D1, D0) are `01.` And,
when the code value of the first line Q0 is `-1` and the code value
of the second line Q1 is `0,` the value of the first comparison
voltage F_DIFF is `1` and the value of the second comparison
voltage F_CM is `0.` Accordingly, the decoded binary data (D1, D0)
are `00.` And, when the code value of the first line Q0 is `0` and
the code value of the second line Q1 is `1,` the value of the first
comparison voltage F_DIFF is `1` and the value of the second
comparison voltage F_CM is `1.` Accordingly, the decoded binary
data (D1, D0) are `11.` Finally, when the code value of the first
line Q0 is `0` and the code value of the second line Q1 is `-1,`
the value of the first comparison voltage F_DIFF is `0` and the
value of the second comparison voltage F_CM is `0.` Accordingly,
the decoded binary data are `10.`
[0048] FIG. 7 is a flowchart illustrating an operating method of a
transmitter 110 according to an example embodiment. Referring to
FIGS. 1 to 7, the operation of the transmitter 110 may will be
described below. The transmitter 110 may receive binary data. The
transmitter 110 may convert the received binary data into ternary
data using a code map (S110). The converted ternary data may be
transmitted through the two lines Q0 and Q1 (S120). The code map
may be set so as not to generate data toggled between both the
lines Q0 and Q1.
[0049] In a data transmission method according to an example
embodiment, in the case in which two or more pins of serial data
are transmitted, two bits of binary data are transmitted to two
lines in a return-to-zero (RZ) manner after being converted into
ternary data (-1,0,1). When both of the two lines are toggled, two
bits of binary data may be transmitted using the other states
except for a case in which both of the two lines are not toggled.
Thus, when RZ transmission is performed by pair coding of two
lines, the number of toggling times may be advantageously decreased
by half as compared with binary RZ transmission.
[0050] FIG. 8 is a flowchart illustrating an operating method of a
receiver 120 according to an example embodiment. Referring to FIGS.
1 to 8, the operating method of the receiver 120 may will be
described below. The receiver 120 may receive ternary data through
the two lines Q0 and Q1 (S210). The receiver 120 may convert the
received ternary data into binary data using a code map (S220). A
data transmission scheme according to an example embodiment may be
used to transmit internal data of a dynamic random-access memory
(DRAM). For example, the data transmission scheme of this
application may be applied to GIO signaling in the DRAM.
[0051] FIG. 9 illustrates a memory device 200 according to another
example embodiment. Referring to FIG. 9, the memory device 200 may
include a memory cell array 210, a row decoder 220, a column
decoder 230, a sense amplifier circuit 240, an address register
250, a bank control logic 252, a refresh counter 254, a row address
multiplexer 256, a column address latch 258, a control logic 260, a
timing control circuit 264, an input/output (I/O) gating circuit
270, an error correction circuit 280, and a data input/output (I/O)
buffer 282.
[0052] The memory cell array 210 may include first to eighth bank
arrays 211 to 218. It will be understood that the number of bank
arrays, constituting the memory cell array 210, is not limited
thereto. The row decoder 220 may include first to eighth bank row
decoders 221 to 228, respectively connected to the first to eighth
bank arrays 211 to 218. The column decoder 230 may include first to
eighth bank column decoders 231 to 238, respectively connected to
the first to eighth bank arrays 211 to 218. The sense amplifier
circuit 240 may include first to eighth bank sense amplifiers 241
to 248, respectively connected to the first to eighth bank arrays
211 to 218. The first to eighth bank arrays 211 to 218, the first
to eighth bank row decoders 221 to 228, the first to eighth bank
column decoders 231 to 238, and the first to eighth bank sense
amplifiers 241 to 248 may constitute first to eighth banks,
respectively. Each of the first to eighth bank arrays 211 to 218
may include a plurality of memory cells MC formed at intersections
of word lines WL and bitlines BL.
[0053] The address register 250 may receive and store an address
ADDR, having a bank address BANK_ADDR, a row address ROW_ADDR, and
a column address COL_ADDR, from an external memory controller. The
address register 250 may provide the received bank address
BANK_ADDR to the bank control logic 252, may provide the received
row address ROW_ADDR to the row address multiplexer 256, and may
provide the received column address COL_ADDR to the column address
latch 258.
[0054] The bank control logic 252 may generate bank control signals
in response to the bank address BANK_ADDR. Among the first to
eighth bank row decoders 221 to 225, a bank row decoder
corresponding to the bank address BANK_ADDR may be activated in
response to the bank control signals. Among the first to eighth
bank column decoders 231 to 238, a bank column decoder
corresponding to the bank address BANK_ADDR may be activated in
response to the bank control signals.
[0055] The row address multiplexer 256 may receive the row address
ROW_ADDR from the address register 250 and may receive the refresh
row address REF_ADDR from the refresh counter 254. The row address
multiplexer 256 may selectively output the row address ROW_ADDR or
the refresh row address REF_ADDR as a row address RA. The row
address RA, output from the row address multiplexer 256, may be
applied to each of the first to eighth bank row decoders 221 to
228.
[0056] Among the first to eighth bank row decoders 221 to 228, a
bank row decoder activated by the bank control logic 252 may decode
the row address RA, output from the row address multiplexer 256, to
activate a wordline corresponding to the row address RA. For
example, the activated bank row decoder may apply a wordline drive
voltage to a word line corresponding to a row address.
[0057] The column address latch 258 may receive the column address
COL_ADDR from the address register 250, and may temporarily store
the received column address COL_ADDR. In addition, the column
address latch 258 may gradually increase the received column
address COL_ADDR in a burst mode. The column address latch 258 may
apply the temporarily stored or gradually increased column address
COL_ADDR to each of the first to eighth bank column decoders 231 to
238. Among the first to eighth bank column decoders 231 to 238, a
bank column decoder activated by the bank control logic 252 may
activate a sense amplifier, corresponding to the bank address
BANK_ADDR and the column address COL_ADDR, through the input/output
gating circuitry 270.
[0058] Each of input/output gating circuits of the input/output
gating circuitry 270 may include an input data mask logic, read
data latches configured to store data output from the first to
eighth bank arrays 211 to 228, and write drivers configured to
write data to the first to eighth bank arrays 211 to 218, together
with circuits configured to gate input/output data. In addition,
the input/output gate circuitry 270 may be implemented by the data
transmission device 100, illustrated in FIGS. 1 to 6, and a data
transmission scheme thereof.
[0059] A codeword CW to be read in one bank array among the first
to eighth bank arrays 211 to 218 may be sensed by a sense amplifier
corresponding to the one bank array, and may be stored in read data
latches. The codeword CW, stored in the read data latches, may be
provided to a memory controller through the data input/output
buffer 282 after being ECC-decoded by the error correction circuit
280. Data DQ to be written to one bank array among the first to
eighth bank arrays 210 to 218 may be written to the one bank array
through write drivers after being ECC-encoded by the error
correction circuit 280.
[0060] The data input/output buffer 282 may provide the data DQ to
the error correction circuit 280 during a write operation based on
a clock signal CLK provided from the memory controller, and may
provide the data DQ to the memory controller provided from the
error correction circuit 280 during a read operation.
[0061] The error correction circuit 280 may generate parity bits
based on data bits of the data DQ provided from the data
input/output buffer 282 during the write operation and may provide
the codeword CW, including the data DQ and the parity bits, to the
input/output gating circuitry 270, and the input/output gating
circuitry 270 may write the codeword CW to a bank array.
[0062] In addition, the error correction circuit 280 may receive
the codeword CW, read from one bank array, from the input/output
gating circuitry 270 during the read operation. The error
correction circuit 280 may performs ECC decoding on the data DQ
using the parity bits, included in the read codeword CW, to correct
at least one error bit included in the data DQ and provide the
corrected error bit to the input/output buffer 282.
[0063] The control logic circuit 260 may be configured to control
an operation of the memory device 200. For example, the control
logic circuit 260 may generate control signals such that the
semiconductor memory device 200 performs a write operation or a
read operation. The control logic circuit 260 may include a command
decoder 261, configured to decode a command CMD received from a
memory controller, and a mode register 262 configured to set an
operating mode of the memory device 200.
[0064] For example, the command decoder 261 may decode a write
enable signal /WE, a row address strobe signal /RAS, a column
address strobe signal /CAS, a chip selection signal /CS, and the
like, to generate operation control signals ACT, PCH, WE, and RD
corresponding to the command CMD. The control logic circuit 260 may
provide operation control signals ACT, PCH, WE, and RD to the
timing control circuit 264. The control signals ACT, PCH, WR, and
RD may include an active signal ACT, a precharge signal PCH, a
write signal WR, and a read signal RD. The timing control circuit
264 may generate first control signal CTL1, controlling a voltage
level of a wordline WL, and second control signals CTL2,
controlling a voltage level of a bitline BL, in response to the
operation control signals ACT, PCH, WR, and RD, and may provide the
first control signals CTL1 and the second control signals CTL2 to
the memory cell array 210.
[0065] FIG. 10 is a detail view of a portion of a bank array
illustrated in FIG. 9. Referring to FIGS. 9 and 10, a portion of a
bank array includes a sub-array block SCB, bitline sense amplifier
regions BLSA, sub-wordline driver regions SWB, and conjunction
regions CONJ.
[0066] The sub-array block SCB may include a plurality of wordlines
WL1 to WL4, extending in a row direction (a first direction), and a
plurality of bitline pairs BL1 to BL2 and BLB1 to BLB2 extending in
a column direction (a second direction). The sub-array block SCB
may include memory cells MC disposed at intersections of the
plurality of wordlines WL1 to WL4 and the plurality of bitline
pairs BL1 to BL2 and BLB1 to BLB2.
[0067] The sub wordline driver regions SWB may include sub wordline
drivers SWD, respectively configured to drive the wordlines WL1 to
WL4. The sub-wordline drivers SWD may be alternately disposed on
left and right sides of the sub-array block SCB.
[0068] The bitline sense amplifier region BLSAB may include bitline
sense amplifiers BLSA and local sense amplifier circuits LSA
connected to bitline pairs BL1 to BL2 and BLB1 to BLB2. The bitline
sense amplifier BLSA may amplify a difference between the voltage
levels sensed by the bitline pairs BL and BLB, and may provide the
amplified difference to local input/output line pairs LIO and LIOB.
The local sense amplifier circuit LSA may control a connection
between the local input/output line pairs L101 and LIOB1 and the
global input/output line pairs GIO1 and GIOB1 in response to a
gated enable signal GEN1 and a local control signal LCTL.
[0069] The local sense amplifier circuit LSA may control a
connection between the local input/output line pairs LIO2 and LIOB2
and the global input/output line pairs GIO2 and GIOB2 in response
to a corresponding gated enable signal and a corresponding local
control signal.
[0070] In an example embodiment, as shown in FIG. 8, the bitline
sense amplifiers BLSA may be alternately disposed above and below
the sub array block SCB. In an example embodiment, the conjunction
regions CONJ may be disposed adjacent to the bitline sense
amplifier regions BLSAB, the sub-wordline driver regions SWB, and
the sub-array block SCB. Block control circuits may be disposed in
the conjunction regions CONJ. The block control circuit may provide
the gated enable signal GEN1 to the local sense amplifier circuit
LSA in response to an enable signal EN1 and a selected signal SEL1.
The local sense amplifier circuit LSA may selectively provide or
block a connection to the global input/output line pairs GIO1 and
GIOB1 in response to the gated enable signal GEN1. Although FIG. 10
illustrates a portion of a bank array in a folded bitline
structure, the description associated with FIG. 10 may be
substantially identically applied to an open bitline structure.
[0071] FIG. 11 illustrates the bitline sense amplifier BLSA
illustrated in FIG. 10. Referring to FIG. 11, a bitline sense
amplifier 650 may be connected to bitlines BL and BLB of each of
the memory cells 660 and 670 included in the memory cell array. The
bitline sense amplifier 650 may be include an N sense amplifier
651, a P sense amplifier 652, a precharge circuit 653, column
select switches 654a and 654b, an NSA driver 655, and a PSA driver
656.
[0072] The N sense amplifier 651 may discharge a low potential
bitline among the bitlines BL and BLB during a sensing operation.
The N sense amplifier 651 may include NMOS transistors NM1 and NM2.
A gate of the NMOS transistor NM1 may be connected to the bitline
BLB, a drain of the NMOS transistor NM1 may be connected to the
bitline BL, and a source of the NMOS transistor NM1 may be
connected to a sense enable line LAB. A gate of the NMOS transistor
NM2 may be connected to the bitline BL, a drain of the NMOS
transistor NM2 may be connected to the bitline BLB, and a source of
the NMOS transistor NM2 may be connected to the sense enable line
LAB. The N sense amplifier 651 may discharge a low potential
bitline with a ground voltage VSS provided to the sense enable line
LAB. The low potential bitline may be one of the bitlines BL and
BLB depending on data stored in the memory cells 660 and 670.
[0073] The P sense amplifier 652 may charge a high potential
bitline, among the bitlines BL and BLB, to a power supply voltage
(VDD) level during a sensing operation. The P sense amplifier 652
may include PMOS transistors PM1 and PM2. A gate of the PMOS
transistor PM1 may be connected to a bitline BLB, a source of the
PMOS transistor PM1 may be connected to the bitline BL, and a drain
of the PMOS transistor PM1 may be connected to the sense enable
line LA. A gate of the PMOS transistor PM2 may be connected to the
bitline BL, a source of the PMOS transistor PM2 may be connected to
the bitline BLB, and a drain of the PMOS transistor PM2 may be
connected to the sense enable line LA. The P sense amplifier 652
may charge a high potential bitline, among the bitlines BL and BLB,
with the power supply voltage VDD provided to the sense enable line
LA. In this case, a charging voltage VDD, provided from the PSA
driver 656, may be provided to the sense enable line LA to turn off
the transistor PM2 having a gate connected to the bitline BL on
which a voltage increased by charge sharing.
[0074] FIG. 12 illustrates the local sense amplifier circuit LSA
illustrated in FIG. 11. Referring to FIG. 12, a local sense
amplifier circuit 700 may include a local sense amplifier 710, a
local input/output line controller 720, and an activation control
circuit 730. The activation control circuit 730 may perform an
exclusive OR (XOR) operation on a first local sense enable signal
PLSAEN1, a first connection control signal PMUXON1, a second
connection control signal PMUXON2 with a gated enable single GEN1
to output a second local sensing enable signal PLSAEN2, a third
connection control signal PMUXON3, and a fourth connection control
signal PMUXON2. Accordingly, depending on a logic level of the
gated enable signal GEN1, logic levels of the first local sensing
enable signal PLSAEN1, the first connection control signal PMUXON1,
and the second connection control signal PMUXON2 may be maintained
or inverted and may be provided as the second local sensing enable
signal PLSAEN2, the third connection control signal PMUXON3, and
the fourth connection control signal PMUXON2. The activation
control circuit 730 may have first to third XOR gates 731, 732, and
733.
[0075] The local sense amplifier 710 may amplify a difference in
voltage between a local input/output line pair LIO1 and LIOB1 in
response to the second local sense enable signal PLSAEN2 and may
transmit data, corresponding to the amplified voltage difference,
to the global inputs/outputs data line pair GIO1 and GIOB1.
[0076] The local input/output line controller 720 may include first
to fourth NMOS transistors 721, 722, 723, and 724, and may control
a connections between the local input/output line pairs LIO1 and
LIOB1 and the global input/output line pairs GIO1 and GIOB1 in
response to a third connection control signal PMUXON3 and a fourth
connection control signal PMUXON2.
[0077] In an example embodiment, when each of the first local
sensing enable signal PLSAEN1, the first connection control signal
PMUXON1 and the second connection control signal PMUXON2 has a high
level and the gated enable signal GEN1 has a high level, each of
the second local sensing enable signal PLSAEN2, the third
connection control signal PMUXON3, and the fourth connection
control signal PMUXON2 may have a low level. Accordingly, the local
sense amplifier 710 is deactivated and the local input/output line
controller 720 may block the connection between the local
input/output line pair LIO1 and LIOB1 and the global input/output
line pair GIO1 and GIOB1.
[0078] In an example embodiment, when each of the first local
sensing enable signal PLSAEN1, the first connection control signal
PMUXON1, and the second connection control signal PMUXON2 has a
high level and the gated enable signal GEN1 has a low level, each
of the second local sensing enable signal PLSAEN2, the third
connection control signal PMUXON3, and the fourth connection
control signal PMUXON2 may have a high level. Accordingly, the
local sense amplifier 710 may be activated, and the local
input/output line controller 720 may provide a connection between
the local input/output line pair LIO1 and LIOB1 and the global
input/output line pair GIO1 and GIOB1.
[0079] The data transmission method of this application may be
applied to data transmitted through a global input/output line.
Thus, 2-GIO may be ternary coded to be represented as two bits,
which will be referred to as a multi-level single global
input/output line (a multi-level single GIO).
[0080] FIG. 13 illustrates ternary data transmitted to global
input/output lines GIO0 and GIO1 according to an example
embodiment. Referring to FIG. 13, binary data `11` may be
represented as the first global input/output line GIO0 has a
gradually increasing level, and the second global input/output line
GIO1 is maintained at a constant level. Binary data `10` may be
represented as the first global input/output line GIO0 is
maintained at a constant level and the second global input/output
line GIO1 has a gradually increasing level. Binary data `01` may be
represented as first global input/output line GIO0 has a gradually
decreasing level and the second global input/output line GIO1 is
maintained at a constant level. Binary data `00` may be represented
as the first global input/output line GIO0 has a constant level and
the second global input/output line GIO1 has a gradually decreasing
level.
[0081] As illustrated in FIG. 13, a difference in voltage GIO
between the first global input/output line GIO0 and the second
global input/output line GIO1 may be used to distinguish data, and
one of the first global input/output line GIO0 and the second
global input/output line GIO1 is always non-toggled.
[0082] FIG. 14 illustrates a transmitter 272 for global
input/output line signaling according to an example embodiment.
Referring to FIG. 14, the transmitter 272 may be implemented in the
same manner as the transmitter 110 illustrated in FIG. 3. Unlike in
FIG. 3, in FIG. 14, binary data are local input/output data LIO0
and LIO2, and ternary data corresponding to the local input/output
data may be provided to global input/output lines GIO_0 and
GIO_2.
[0083] The transmitter 272 according to an example embodiment may
include a first transistor T1 having a drain connected to a power
supply terminal VDD, a second transistor T2 having a drain
connected to a source of the first transistor T1 and a gate
connected to an inverted version LIO0B of the first local
input/output line LIO0, a third transistor T3 having a drain
connected to a source of the second transistor T2, a source
connected to a ground terminal GND, and a gate receiving a local
sense amplifier enable signal LSA_EN, a fourth transistor T4 having
a drain connected to the source of the first transistor T1 and a
gate connected to an inverted version LIO2B of the second local
input/output line LIO2, a fifth transistor T5 having a drain
connected to a source of the fourth transistor T4, a source
connected to the first global input/output line GIO_0, and a gate
receiving the local sense amplifier enable signal LSA_EN, a sixth
transistor T6 having a drain connected to the source of the first
transistor T1 and a gate connected to the second local input/output
line LIO2, and a seventh transistor T7 having a drain connected to
a source of the sixth transistor T6, a source connected to the
second global input/output line GIO_2, and a gate receiving the
local sense amplifier enable signal LSA_EN. In an example
embodiment, each of the first to seventh transistors T1 to T7 may
include an NMOS transistor.
[0084] In an example embodiment, the transmitter 272 may further
include a first switch SW1, configured to provide a global
input/output line precharge voltage VGIOPRE to a first global
input/output line GIO_0, and a second switch SW2 configured to
provide the global input/output line precharge voltage VGIOPRE to a
second global input/output line GIO_2.
[0085] FIG. 15 illustrates a receiver 274 for global input/output
line signaling according to an example embodiment. Referring to
FIG. 15, the receiver 274 may be implemented in the same manner as
the receiver 120 illustrated in FIG. 4. Unlike in FIG. 4, in FIG.
15, the receiver 274 receives ternary data from global input/output
lines GIO_0 and GIO_2, and may perform a comparison operation in
response to an enable signal IOSA_EN of an input/output sense
amplifier to output binary data according to a comparison
result.
[0086] The receiver 274 may include a differential comparator 274-1
configured to compare a first voltage of the first global
input/output line GIO_0 and a second voltage of the second global
input/output line GIO_2 with each other in response to the
input/output sense amplifier enable signal IOSA_EN, a common mode
detector 274-2 configured to compare a common voltage of the first
voltage and the second voltage and a reference voltage with each
other in response to the input/output sense amplifier enable signal
IOSA_EN, and a decoder 274-4 configured to receive a first output
value IOSA_DIFF of the differential comparator 274-1 and a second
output value IOSA_LVL of the common mode detector 274-2 and to
output a first bit D0 (B_LIO0) and a second bit D1 (B_LIO2),
respectively corresponding to first and second local input/output
lines LIO0 and LIO2.
[0087] In an example embodiment, the decoder 274-4 may perform a
NOR operation on the first output value IOSA_DIFF and the second
output value IOSA_LVL to output the first bit B_LIO0 and to output
the second bit B_LIO2 corresponding to the second output value
IOSA_LVL.
[0088] FIG. 16 illustrates a decoding table that summarizes
operations performed by the transmitter and receiver logic of FIGS.
14-15, according to an embodiment of the invention. As shown, the
four combinations of local input/output data LIO0, LIO2 (i.e.,
(1,1), (0,1), (1,0) and (0,0)) are converted by the transmitter 272
into ternary data, as described hereinabove, which is provided to a
pair of global input/output lines GIO_0, GIO_2 as the following
"ternary" combinations: (0,1), (0, -1), (1,0) and (-1,0). As shown
by FIGS. 15-16, these "ternary" combinations are converted by the
receiver 274 into the following combinations of "intermediate"
first and second output values IOSA_DIFF, IOSA_LVL: (0,1), (1,0),
(1,1) and (0,0), which are then decoded into the following binary
data signals D1, D0, where: [0089] D1=B_LIO2=IOSA_LVL, and [0090]
D0=B_LIO0=XNOR(IOSA_LVL, IOSA_DIFF).
[0091] FIGS. 17A, 17B, 17C, and 17D illustrate examples of a code
map according to an example embodiment. Referring to FIGS. 17A,
17B, 17C, and 17D, there may be 16 cases associated with mapping of
ternary data to binary data.
[0092] A first case corresponds to the code map described in FIGS.
2 to 6. Ternary data transmitted to respective two lines Q0 and Q1
to correspond to binary data `11` are `0` and `1,` ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `10` are `1` and `0,` ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `01`
are `-1` and `0,` and ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to binary data `00` are `0` and
`-1.`
[0093] In a second case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to the binary data `11` are `1`
and `0,` ternary data transmitted to the respective two lines Q0
and Q1 to correspond to binary `10` are `0` and `1,` ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `01` are `0` and `-1,` and ternary data transmitted on
the respective two lines Q0 and Q1 to correspond to the binary data
`00` are `-1` and `0.`
[0094] In a third case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to the binary data `11` are `0`
and `1,` ternary data transmitted to the respective two lines Q0
and Q1 to correspond to binary data `10` are `1` and `0,` and
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `-1` and `0,` and ternary data
transmitted on the respective two lines Q0 and Q1 to correspond to
binary data `00` are `0` and `-1.`
[0095] In a fourth case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to the binary data `11` are `0`
and `1,` and ternary data transmitted to the respective two lines
Q0 and Q1 to correspond to binary data `10` are `1` and `0,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `0` and `-1,` and ternary data
transmitted on the respective two lines Q0 and Q1 to correspond to
binary data `00` are `-1` and `0.`
[0096] In a fifth case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to binary data `11` are `-1` and
`0,` ternary data transmitted to the respective two lines Q0 and Q1
to correspond to binary data `10` are `0` and `-1,` ternary data
transmitted to the respective two lines Q0 and Q1 to corresponds to
binary data `01` are `1` and `0,` and ternary data transmitted to
the respective two lines Q0 and Q1 to correspond to binary data
`00` are `-1` and `0.`
[0097] In a sixth case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to binary data `11` are `0` and
`-1,` and ternary data transmitted to the respective two lines Q0
and Q1 to correspond to the binary data `10` are `-1` and `0,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to the binary data `01` are `1` and `0,` and ternary
data transmitted to the respective two lines Q0 and Q1 to
correspond to the binary data `00` are `0` and `1.`
[0098] In a seventh case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `-1` and `0,` ternary data transmitted to the respective two
lines Q0 and Q1 to correspond to binary data `10` are `0` and `-1,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `0` and `1,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `00` are `1` and `0.`
[0099] In an eighth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to the binary data
`11` are `0` and `-1,` ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to binary data `10` are `-1` and
`0,` ternary data transmitted to the respective two lines Q0 and Q1
to correspond to binary data `01` are `0` and `1,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `00` are `1` and `0.`
[0100] In a ninth case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to the binary data `11` are `1`
and `0,` and ternary data transmitted to the respective two lines
Q0 and Q1 to correspond to binary data `10` are `-1` and `0,`
ternary data transmitted the respective two lines Q0 and Q1 to
correspond to binary data `01` are `0` and `1,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
the binary data `00` are `0` and `-1.`
[0101] In a tenth case, ternary data transmitted to the respective
two lines Q0 and Q1 to correspond to binary data `11` are `-1` and
`0,` ternary data transmitted in the respective two lines Q0 and Q1
to correspond to binary data `10` are `1` and `0,` ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `01` are `0` and `1,` and ternary data transmitted to
the respective two lines Q0 and Q1 to correspond to binary data
`00` are `0` and `-1.`
[0102] In an eleventh case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `1` and `0,` ternary data transmitted to the respective two
lines Q0 and Q1 to correspond to binary data `10` are `-1` and `0,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `0` and `-1,` and ternary data
transmitted on the respective two lines Q0 and Q1 to correspond to
the binary data `00` are `0` and `1.`
[0103] In a twelfth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `-1` and `0,` ternary data transmitted in the respective two
lines Q0 and Q1 to correspond to binary data `10` are `1` and `0,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `0` and `-1,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `00` are `0` and `1.`
[0104] In a thirteenth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `0` and `1,` ternary data transmitted to the respective two
lines Q0 and Q1 to correspond to binary data `10` are `0` and `-1,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `1` and `0,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `00` are `-1` and `0.`
[0105] In a fourteenth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `0` and `1,` ternary data transmitted to the respective two
lines Q0 and Q1 to correspond to binary data `10` are `0` and `-1,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` are `-1` and `0,` and ternary data
transmitted on the respective two lines Q0 and Q1 to correspond to
binary data `00` are `1` and `0.`
[0106] In a fifteenth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `0` and `-1,` ternary data transmitted in the respective two
lines Q0 and Q1 to correspond to binary data `10` are `0` and `1,`
ternary data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `01` `1` and `0,` and ternary data
transmitted to the respective two lines Q0 and Q1 to correspond to
binary data `00` are `-1` and `0.`
[0107] In a sixteenth case, ternary data transmitted to the
respective two lines Q0 and Q1 to correspond to binary data `11`
are `0` and `-1,` ternary data transmitted in the respective two
lines Q0 and Q1 to correspond to binary data `10` are `0` and `1,`
and ternary data transmitted to the respective two lines Q0 and Q1
to correspond to binary data `01` are `-1` and `0,` and ternary
data transmitted to the respective two lines Q0 and Q1 to
correspond to binary data `00` are `1` and `0.`
[0108] A logic circuit, constituting a decoder of a receiver, may
include a first logic circuit configured to output a first data bit
D0 and a second logic circuit configured to output a second data
bit D1. The first logic circuit may include an inverter (INV)
operator, and the second logic circuit may include an XOR operator,
an XNOR operator, or an INV operator.
[0109] In a data receiving method of each of the cases, when the
same signal-VREF is maintained in a receiver Rx, current
consumption may be decreased by half to improve power efficiency
twice, as compared with a pseudo-differential or single-ended
method.
[0110] A memory device according to an example embodiment may be
applied to a mobile device. For example, FIG. 18 illustrates a
mobile device 3000 according to an example embodiment. Referring to
FIG. 18, the mobile device 3000 may include an application
processor 3100, at least one DRAM 3200, at least one storage device
3300, at least one sensor 3300, a display device 3400, and audio
device 3500, a network processor 3600, and at least one
input/output device 3700. For example, the mobile device 3000 may
be implemented as a laptop computer, a mobile phone, a smartphone,
a tablet personal computer (PC), or a wearable computer.
[0111] The application processor 3100 may be implemented to control
the overall operation of the mobile device 3000. The application
processor 3100 may execute applications such as a web browser, a
game application, a video player, and the like. According to
example embodiments, the application processor 3100 may include a
single core or multiple cores. For example, the application
processor 3100 may be a multi-core processor such as a dual-core
processor, a quad-core processor, a hexa-core processor, and the
like. The application processor 3100 may further include an
internal or external cache memory.
[0112] The application processor 3100 may include a controller
3110, a neural processing unit (NPU) 3120, and an interface 3130.
In an example embodiment, the NPU 3120 may optionally be
provided.
[0113] In an example embodiment, the application processor 3100 may
be implemented as a system-on-chip (SoC). A kernel of an operating
system, driven in the system-on-chip (SoC), may include a device
driver configured to control an input/output (I/O) scheduler and
the storage device 3300. The device driver may control access
performance of the storage device 3300, or may control a CPU mode,
a dynamic voltage and frequency scaling (DVFS) level, and the like,
in the SoC with reference to the number of synchronous queues
managed in the input/output scheduler.
[0114] The DRAM 3210 may be connected to a controller 3110. The
DRAM 3210 may store data required for an operation of the
application processor 3100. For example, the DRAM 3210 may
temporarily store an operating system (OS) and application data, or
may be used as an execution space of various software codes.
[0115] The DRAMs 3210 and 3220 may be configured to convert binary
data into ternary data and to transmit the converted ternary data
to two lines, as described above with reference to FIGS. 1 to 17.
The DRAM 3210 has relatively greater latency and bandwidth (BW)
than an I/O device or a flash memory. The DRAM 3210 may be
initialized during mobile power-on, and may be used as a space, in
which an OS and application data loaded and temporarily stored, or
as a space in which various software codes are executed. The mobile
system performs a multitasking operation of simultaneously loading
several applications, and switching between applications and
execution speed may be used as a performance index of the mobile
system. The DRAM 3220 may be connected to NPU 3120. The DRAM 3220
may store data associated with artificial intelligence
computation.
[0116] The storage device 3300 may be connected to an interface
3130. In an example embodiment, the interface 3130 may be driven by
a communications protocol of one of double data rate (DDR), DDR2,
DDR3, DDR4, low power DDR (LPDDR), universal serial bus (USB),
multimedia card (MMC), embedded MMC, peripheral component
interconnection (PCI), non-volatile memory express (NVMe),
peripheral component interconnect express (PCIe), serial at
attachment (SATA), small computer system interface (SCSI), serial
attached SCSI (SAS), universal storage bus (USB) attached SCSI
(UAS), Internet small computer system interface (iSCSI), fiber
channel, and fiber channel over ethernet (FCoE). In an example
embodiment, a single storage device 3000 may be included in the
mobile device 3000 in an embedded form. In another example
embodiment, a single storage device 3000 may be removably included
in the mobile device 3000.
[0117] The storage device 3300 may be configured to store user
data. For example, the storage device 3300 may store data collected
from a sensor 3400, or may store data network data, augmented
reality (AR)/virtual reality (VR) data, and high-definition (HD) 4K
contents. The storage device 3300 may include at least one
nonvolatile memory device. For example, the storage device 3300 may
include a solid state driver (SSD), an embedded multimedia card
(eMMC), and the like.
[0118] In an example embodiment, the storage device 3300 may be
implemented as an additional chip in the application processor
3100, or may be implemented in a single package with the
application processor 3100.
[0119] In an example embodiment, the storage device 3300 may be
mounted using various types of package. For example, the storage
device 3300 may be mounted using packages such as Package on
Package (PoP), Ball grid arrays (BGAs), Chip scale packages (CSPs),
Plastic Leaded Chip Carrier (PLCC), Plastic Dual In-Line Package
(PDIP), Die in Waffle Pack, Die in Wafer Form, Chip On Board (COB),
Ceramic Dual In-Line Package (CERDIP), Plastic Metric Quad Flat
Pack (MQFP), Thin Quad Flatpack (TQFP), Small Outline (SOIC),
Shrink Small Packages such as Outline Package (SSOP), Thin Small
Outline (TSOP), System In Package (SIP), Multi Chip Package (MCP),
Wafer-level Fabricated Package (WFP), and Wafer-Level Processed
Stack Package (WSP).
[0120] The sensor 3300 may be configured to sense an external
environment of the mobile device 3000. In an example embodiment,
the sensor 3300 may include an image sensor configured to senses an
image. In this case, the sensor 3300 may transmit generated image
information to the application processor 3100. In another example
embodiment, the sensor 3300 may include a biosensor configured to
detect biometric information. For example, the sensor 3300 may
detect a fingerprint, an iris pattern, a blood vessel pattern, a
heart rate, blood glucose, and the like, and may generate sensing
data corresponding to the detected information. It will be
understood that the sensor 3300 is not limited to the image sensor
and the biosensor. The sensor 3300 of this application may include
an arbitrary sensor such as an illuminance sensor, an acoustic
sensor, an acceleration sensor, or the like.
[0121] The display device 3500 may be configured to output data.
For example, the display device 3500 may output image data, sensed
using the sensor 3300, or to output data calculated using the
application processor 3100.
[0122] The audio device 3600 may be configured to output voice data
to an external entity or to detect external voice.
[0123] The network processor 3700 may be configured to communicate
with an external device in a wired or wireless communications
scheme.
[0124] The input/output device 3800 may be configured to input data
to the mobile device 3000 or to output data from the mobile device
3000. The input/output device 3800 may include devices, configured
to provide digital input and output functions, such as a USB, a
storage, a digital camera, an SD card, a touchscreen, a DVD, a
modem, a network adapter, and the like.
[0125] The mobile device 3000 according to an example embodiment
may transmit multi-level data so as not to be toggled
simultaneously to achieve low current and low power.
[0126] The data transmission method and device in FIGS. 1 to 18
transmit a ternary code through two lines. However, transmission of
the ternary code is not necessarily limited thereto. The data
transmission device and method of this application may transmit a
ternary code through three lines.
[0127] A method of converting binary data into ternary data and
transmitting the converted ternary data has been described with
reference to FIGS. 1 to 18. However, this application is not
limited thereto. This application may extend to a method of
converting binary data into multi-level data, other than ternary
data, and transmitting the converted multi-level data.
[0128] As described above, according to example embodiments,
ternary data non-toggled simultaneously may be transmitted to two
lines to decrease the number of data lines and reduce power
consumption during data transmission.
[0129] While example embodiments have been shown and described
above, it will be apparent to those skilled in the art that
modifications and variations could be made without departing from
the scope of the present inventive concept as defined by the
appended claims.
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