U.S. patent application number 17/149820 was filed with the patent office on 2021-05-06 for temperature control method.
The applicant listed for this patent is Tokyo Electron Limited. Invention is credited to Hiroshi Koizumi, Noriiki Masuda, Kenichiro Nakamura, Takari Yamamoto.
Application Number | 20210132575 17/149820 |
Document ID | / |
Family ID | 1000005341134 |
Filed Date | 2021-05-06 |
![](/patent/app/20210132575/US20210132575A1-20210506\US20210132575A1-2021050)
United States Patent
Application |
20210132575 |
Kind Code |
A1 |
Yamamoto; Takari ; et
al. |
May 6, 2021 |
TEMPERATURE CONTROL METHOD
Abstract
A temperature control method of controlling a temperature of a
semiconductor wafer mounted on a mounting table includes a supply
process of supplying, in a state that a supply of a power to a
heater configured to heat the mounting table is stopped or the
power is maintained to be constant, a heat transfer gas into a gap
between the semiconductor wafer and the mounting table; a
measurement process of measuring a temperature variation of the
mounting table due to heat exchange between the semiconductor wafer
and the mounting table through the heat transfer gas; a calculation
process of calculating a correction value based on the temperature
variation of the mounting table; and a control process of starting
the supply of the power and controlling the power such that the
temperature of the mounting table reaches a target temperature
corrected with the correction value.
Inventors: |
Yamamoto; Takari;
(Kurokawa-gun, JP) ; Masuda; Noriiki;
(Kurokawa-gun, JP) ; Nakamura; Kenichiro;
(Kurokawa-gun, JP) ; Koizumi; Hiroshi;
(Kurokawa-gun, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Tokyo Electron Limited |
Tokyo |
|
JP |
|
|
Family ID: |
1000005341134 |
Appl. No.: |
17/149820 |
Filed: |
January 15, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15189195 |
Jun 22, 2016 |
10921773 |
|
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17149820 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67248 20130101;
H01L 21/6831 20130101; G05B 2219/49057 20130101; G05B 19/404
20130101; H01L 21/67109 20130101; G05B 2219/45031 20130101 |
International
Class: |
G05B 19/404 20060101
G05B019/404; H01L 21/67 20060101 H01L021/67; H01L 21/683 20060101
H01L021/683 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 24, 2015 |
JP |
2015-126769 |
Claims
1. A temperature control method comprising: (a) providing a
substrate on a substrate support surface of a substrate support,
the substrate having a temperature different from a temperature of
the substrate support; (b) supplying, in a state that a supply of a
power to at least one heater configured to heat the substrate
support is stopped or in a state that the power supplied to the at
least one heater is maintained to be constant, a heat transfer gas
into a gap between a rear surface of the substrate and the
substrate support surface through one or more supply holes
positioned within the substrate support surface; (c) measuring a
temperature variation of the substrate support due to heat exchange
between the substrate and the substrate support through the heat
transfer gas; (d) calculating a correction value based on the
temperature variation of the substrate support; and (e) controlling
the power to the at least one heater such that the temperature of
the substrate support reaches a target temperature corrected with
the correction value.
2. The temperature control method of claim 1, wherein, in (c), a
gradient of the temperature variation of the substrate support in a
time period between a first time point upon the lapse of a first
time after the heat transfer gas is supplied into the gap between
the rear surface of the substrate and the substrate support surface
of the substrate support and a second time point upon the lapse of
a second time from the first time point is measured as the
temperature variation of the substrate support.
3. The temperature control method of claim 2, further comprising:
(c-1) measuring, after supplying, in the state that the supply of
the power to the at least one heater configured to heat the
substrate support is stopped or in the state that the power
supplied to the at least one heater is maintained to be constant,
the heat transfer gas into the gap between a temperature
measurement wafer having a temperature different from the
temperature of the substrate support and the substrate support on
which the temperature measurement wafer is mounted and after
measuring the temperature variation of the substrate support due to
heat exchange between the temperature measurement wafer and the
substrate support through the heat transfer gas, the temperature of
the temperature measurement wafer by controlling the power to the
at least one heater such that the temperature of the substrate
support reaches a preset temperature; and (c-2) creating a
correction table in which, for each of different pressures of the
heat transfer gas, the temperature variation of the substrate
support measured in (c-1) corresponds to the correction value
according to a difference between the temperature of the
temperature measurement wafer measured in (c-1) and a reference
temperature, wherein the correction value based on the temperature
variation of the substrate support is calculated from the
correction table in (d).
4. The temperature control method of claim 1, wherein (b), (c), (d)
and (e) are performed on the substrate before the substrate is
processed.
5. The temperature control method of claim 1, wherein the heat
transfer gas is supplied into the gap between the rear surface of
the substrate and the substrate support surface of the substrate
support through multiple supply holes formed in the substrate
support surface of the substrate support.
6. The temperature control method of claim 1, wherein the at least
one heater is plural in number, and the heaters are provided within
the substrate support in concentric shapes having different radii
when viewed from above the substrate support.
7. The temperature control method of claim 6, wherein the
correction value based on the temperature variation of the
substrate support is calculated for each of the heaters in (d), and
the power to each of the heaters is controlled such that the
temperature of the substrate support reaches the target temperature
in (e).
8. A temperature control method comprising: (a) cooling a substrate
support on which a substrate is supported; (b) providing the
substrate on a substrate support surface of the substrate support;
(c) supplying a heat transfer gas into a gap between a rear surface
of the substrate and the substrate support surface through one or
more supply holes positioned within the substrate support surface;
(d) measuring a temperature variation of the substrate support
after (c); (e) calculating a correction value based on the
temperature variation of the substrate support; and (f) controlling
a temperature of the substrate support to reach a target
temperature corrected with the correction value.
9. The temperature control method of claim 8, wherein, in (c), the
supplying of the heat transfer gas is started in a state that a
supply of a power to at least one heater configured to heat the
substrate support is stopped or in a state that the power supplied
to the at least one heater is maintained to be constant.
10. The temperature control method of claim 8, wherein, in (f), the
temperature of the substrate support is controlled to reach a
target temperature corrected with the correction value by
controlling the supply of the power to the at least one heater
and/or a pressure of the heat transfer gas.
11. The temperature control method of claim 8, wherein the
substrate support has multiple zones, the at least one heater is
provided in each of the multiple zones, and (c), (d), (e) and (f)
are performed for each of the multiple zones.
12. The temperature control method of claim 11, wherein the
multiple zones of the substrate support have concentric shapes
having different radii.
13. The temperature control method of claim 11, wherein the
substrate support has at least one temperature sensor for each of
the multiple zones.
14. A plasma processing method comprising: (a) cooling a substrate
support on which a substrate is supported; (b) providing the
substrate on a substrate support surface of the substrate support;
(c) supplying a heat transfer gas into a gap between a rear surface
of the substrate and the substrate support surface through one or
more supply holes positioned within the substrate support surface;
(d) measuring a temperature variation of the substrate support
after (c); (e) calculating a correction value based on the
temperature variation of the substrate support; (f) controlling a
supply of a power to at least one heater configured to heat the
substrate support and/or a pressure of the heat transfer gas such
that a temperature of the substrate support reaches a target
temperature corrected with the correction value; and (g)
plasma-processing the substrate after the temperature of the
substrate support is stabilized;
15. The plasma processing method of claim 14, wherein, in (c), the
supplying of the heat transfer gas is started in a state that the
supply of the power to the at least one heater is stopped or in a
state that the power supplied to the at least one heater is
maintained to be constant.
16. The plasma processing method of claim 14, wherein the substrate
support has multiple zones, the at least one heater is provided in
each of the multiple zones, and (c), (d), (e) and (f) are performed
for each of the multiple zones.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a continuation application of U.S. patent
application Ser. No. 15/189,195, filed on Jun. 22, 2016, which
claims the benefit of Japanese Patent Application No. 2015-126769
filed on Jun. 24, 2015, the entire disclosures of which are
incorporated herein by reference.
TECHNICAL FIELD
[0002] The embodiments described herein pertain generally to a
temperature control method.
BACKGROUND
[0003] In a manufacturing process of a semiconductor device, a
temperature of a semiconductor wafer being processed is one of
important factors that affect a characteristic of the semiconductor
device. Accordingly, in the manufacturing process, it is required
to control the temperature of the semiconductor wafer with high
accuracy. To meet this requirement, there is known a technique in
which variations of a power supplied to a heater, a temperature of
a sample and a temperature of a temperature sensor with a lapse of
time, for example, are measured in advance under a condition where
no plasma process is performed, and a relationship between these
measurement values is approximated to a first-order simultaneous
differential equation. In this technique, through the same
observation based on the approximated first-order simultaneous
differential equation, the temperature of the sample is predicted
from the variations of the sensor temperature, the heater power and
the heat input from plasma with a lapse of time. Then, by using the
predicted temperature of the sample, the temperature of the sample
is feedback-controlled.
[0004] Patent Document 1: Japanese Patent Laid-open Publication No.
2009-302390
[0005] In a mass-production process of semiconductor wafers, as a
processing apparatus performs a certain process repeatedly upon the
semiconductor wafers, an environment within the processing
apparatus may be gradually changed. For example, in a processing
apparatus configured to form preset films on a semiconductor wafer,
as the process is performed upon multiple semiconductor wafers, the
amount of a reaction byproduct (hereinafter, referred to as
"deposit") adhering to an inner wall of the processing apparatus
increases. If the deposit is stuck to a surface of a mounting table
configured to mount thereon the semiconductor wafer, thermal
resistance between the semiconductor wafer and the mounting table
is changed. If the thermal resistance between the semiconductor
wafer and the mounting table is changed, temperatures of the
semiconductor wafers during the processes are different
therebetween even if a temperature of, for example, a heater
provided in the mounting table is maintained constant. As a result,
a processing condition becomes different between the multiple
semiconductor wafers, so that characteristics of the semiconductor
devices produced from these semiconductor wafers are non-uniform as
well.
[0006] It may be considered to remove the deposit by performing a
cleaning process on the inside of the processing apparatus after
every preset number of semiconductor wafers is processed. Since,
however, the amount of the deposit is different before and after
the cleaning process, the thermal resistance between the mounting
table and each semiconductor wafer is still slightly different.
Furthermore, if the cleaning process is frequently performed,
throughput of the mass-production process for the semiconductor
wafers is deteriorated.
SUMMARY
[0007] A temperature control method of controlling a temperature of
a processing target object mounted on a mounting surface of a
mounting table includes a supply process of supplying, in a state
that a supply of a power to at least one heater configured to heat
the mounting table is stopped or in a state that the power supplied
to the at least one heater is maintained to be constant, a heat
transfer gas into a gap between the processing target object and
the mounting table on which the processing target object having a
temperature different from a temperature of the mounting table is
mounted; a measurement process of measuring a temperature variation
of the mounting table due to heat exchange between the processing
target object and the mounting table through the heat transfer gas;
a calculation process of calculating a correction value based on
the temperature variation of the mounting table; and a control
process of starting the supply of the power to the at least one
heater and controlling the power to the at least one heater such
that the temperature of the mounting table reaches a target
temperature corrected with the correction value.
[0008] In one exemplary embodiment, a temperature control method of
controlling a temperature of a processing target object mounted on
a mounting surface of a mounting table includes a supply process, a
first measurement process, a calculation process and a control
process. In the supply process, in a state that a supply of a power
to at least one heater configured to heat the mounting table is
stopped or in a state that the power supplied to the at least one
heater is maintained to be constant, a heat transfer gas is
supplied into a gap between the processing target object and the
mounting table on which the processing target object having a
temperature different from a temperature of the mounting table is
mounted. In the first measurement process, a temperature variation
of the mounting table due to heat exchange between the processing
target object and the mounting table through the heat transfer gas
is measured. In the calculation process, a correction value is
calculated based on the temperature variation of the mounting
table. In the control process, the supply of the power to the at
least one heater is started, and the power to the at least one
heater is controlled such that the temperature of the mounting
table reaches a target temperature corrected with the correction
value.
[0009] In the first measurement process, a gradient of the
temperature variation of the mounting table in a time period
between a first time point upon the lapse of a first time after the
heat transfer gas is supplied into the gap between processing
target object and the mounting table and a second time point upon
the lapse of a second time from the first time point may be
measured as the temperature variation of the mounting table.
[0010] The temperature control method may further include a second
measurement process and a creation process. In the second
measurement process, in the state that the supply of the power to
the at least one heater configured to heat the mounting table is
stopped or in the state that the power supplied to the at least one
heater is maintained to be constant, the heat transfer gas is
supplied into the gap between a temperature measurement wafer
having a temperature different from the temperature of the mounting
table and the mounting table on which the temperature measurement
wafer is mounted and the temperature variation of the mounting
table due to heat exchange between the temperature measurement
wafer and the mounting table through the heat transfer gas is
measured. Then, the temperature of the temperature measurement
wafer is measured by controlling the power to the at least one
heater such that the temperature of the mounting table reaches a
preset temperature. In the creation process, a correction table, in
which the temperature variation of the mounting table measured in
the second measurement process corresponds to the correction value
according to a difference between the temperature of the
temperature measurement wafer measured in the second measurement
process and a reference temperature, is created for each of
different pressures of the heat transfer gas. In the calculation
process, the correction value based on the temperature variation of
the mounting table is calculated from the correction table.
[0011] The supply process, the first measurement process, the
calculation process and the control process may be performed on the
processing target object before the processing target object is
processed.
[0012] The heat transfer gas may be supplied into the gap between
the processing target object and the mounting table through
multiple supply holes formed in the mounting surface of the
mounting table.
[0013] The at least one heater may be plural in number, and the
heaters may be provided within the mounting table in concentric
shapes having different radii when viewed from above the mounting
table.
[0014] The correction value based on the temperature variation of
the mounting table may be calculated for each of the heaters in the
calculation process, and the power to each of the heaters may be
controlled such that the temperature of the mounting table reaches
the target temperature in the control process.
[0015] In another exemplary embodiment, a temperature control
method of controlling a temperature of a processing target object
mounted on a mounting surface of a mounting table includes a supply
process, a first measurement process, a first calculation process
and a control process. In the supply process, in a state that a
supply of a power to at least one heater configured to heat the
mounting table is stopped or in a state that the power supplied to
the at least one heater is maintained to be constant, a heat
transfer gas of a first pressure is supplied into a gap between the
processing target object and the mounting table on which the
processing target object having a temperature different from a
temperature of the mounting table is mounted. In the first
measurement process, a temperature variation of the mounting table
due to heat exchange between the processing target object and the
mounting table through the heat transfer gas is measured. In the
first calculation process, a second pressure of the heat transfer
gas is calculated based on the temperature variation of the
mounting table. In the control process, the supply of the power to
the at least one heater is started, a pressure of the heat transfer
gas supplied into the gap between the mounting table and the
processing target object is set to the second pressure, and the
power to the at least one heater is controlled such that the
temperature of the mounting table reaches a target temperature.
[0016] In the first measurement process, a gradient of the
temperature variation of the mounting table in a time period
between a first time point upon the lapse of a first time after the
heat transfer gas is supplied into the gap between the processing
target object and the mounting table and a second time point upon
the lapse of a second time from the first time point may be
measured as the temperature variation of the mounting table.
[0017] The temperature control method may further include a second
measurement process, a second calculation process and a third
calculation process. In the second measurement process, in the
state that the supply of the power to the at least one heater
configured to heat the mounting table is stopped or in the state
that the power supplied to the at least one heater is maintained to
be constant, the heat transfer gas is supplied into the gap between
a temperature measurement wafer having a temperature different from
the temperature of the mounting table and the mounting table on
which the temperature measurement wafer is mounted and the
temperature variation of the mounting table due to heat exchange
between the temperature measurement wafer and the mounting table
through the heat transfer gas is measured. Then, the temperature of
the temperature measurement wafer is measured by controlling the
power to the at least one heater such that the temperature of the
mounting table reaches a preset temperature. In the second
calculation process, for each of different pressures of the heat
transfer gas, a relational expression indicating a relation between
the pressure of the heat transfer gas and the gradient of the
temperature variation is calculated based on the gradient of the
temperature variation of the mounting table measured in the second
measurement process. In the third calculation process, as a target
gradient of the temperature variation, the gradient of the
temperature variation of the mounting table obtained when the
temperature of the temperature measurement wafer measured in the
second measurement process reaches a reference temperature is
calculated. In the first calculation process, the second pressure
is calculated based on the relational expression calculated in the
second calculation process and the target gradient of the
temperature variation calculated in the third calculation
process.
[0018] The supply process, the first measurement process, the first
calculation process and the control process may be performed on the
processing target object before the processing target object is
processed.
[0019] The heat transfer gas may be supplied through multiple
supply holes formed in the mounting surface of the mounting
table.
[0020] The at least one heater may be plural in number, and the
heaters may be provided within the mounting table in concentric
shapes having different radii when viewed from above the mounting
table.
[0021] The pressure of the heat transfer gas may be independently
controlled in regions of the mounting surface on which the heaters
are provided.
[0022] According to the exemplary embodiments, the non-uniformity
in the temperatures of the semiconductor wafers can be
suppressed.
[0023] The foregoing summary is illustrative only and is not
intended to be in any way limiting. In addition to the illustrative
aspects, embodiments, and features described above, further
aspects, embodiments, and features will become apparent by
reference to the drawings and the following detailed
description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In the detailed description that follows, embodiments are
described as illustrations only since various changes and
modifications will become apparent to those skilled in the art from
the following detailed description. The use of the same reference
numbers in different figures indicates similar or identical
items.
[0025] FIG. 1 is a diagram illustrating an example of a processing
system;
[0026] FIG. 2 is a cross sectional view illustrating an example of
a processing apparatus;
[0027] FIG. 3 is a diagram illustrating an example of a top surface
of an electrostatic chuck;
[0028] FIG. 4 is a diagram illustrating an example of a cross
section taken along a line A-A of FIG. 3;
[0029] FIG. 5 is a block diagram illustrating an example of a
control apparatus;
[0030] FIG. 6 is a diagram illustrating an example of a correction
table according to a first exemplary embodiment;
[0031] FIG. 7A to FIG. 7C are diagrams illustrating examples of
temperature variations of a temperature measurement wafer and the
electrostatic chuck in creating the correction table;
[0032] FIG. 8A to FIG. 8C are enlarged views illustrating the
examples of the temperature variations of the temperature
measurement wafer and the electrostatic chuck in creating the
correction table;
[0033] FIG. 9 is a diagram illustrating examples of data regarding
the temperature of the temperature measurement wafer and a gradient
of the temperature variation of the electrostatic chuck with
respect to different pressures of a heat transfer gas;
[0034] FIG. 10A to FIG. 10C are diagrams illustrating examples of
the temperature variations of the temperature measurement wafer and
the electrostatic chuck when correction values are applied;
[0035] FIG. 11 is a flowchart for describing an example of a
process of creating the correction table according to the first
exemplary embodiment;
[0036] FIG. 12 is a flowchart for describing an example of a
process of processing a semiconductor wafer W according to the
first exemplary embodiment;
[0037] FIG. 13 is a diagram illustrating an example of a correction
table according to a second exemplary embodiment;
[0038] FIG. 14 is a flowchart for describing an example of a
process of creating the correction table according to the second
exemplary embodiment;
[0039] FIG. 15 is a diagram illustrating an example of a method of
calculating a pressure of a heat transfer gas;
[0040] FIG. 16 is a flowchart for describing an example of a
process of processing the semiconductor wafer W according to the
second exemplary embodiment;
[0041] FIG. 17 is a diagram illustrating an example of a computer
configured to implement a function of a control apparatus; and
[0042] FIG. 18 is a diagram illustrating an example of a time
period during which a gradient of the temperature variation of the
electrostatic chuck is calculated.
DETAILED DESCRIPTION
[0043] In the following detailed description, reference is made to
the accompanying drawings, which form a part of the description. In
the drawings, similar symbols typically identify similar
components, unless context dictates otherwise. Furthermore, unless
otherwise noted, the description of each successive drawing may
reference features from one or more of the previous drawings to
provide clearer context and a more substantive explanation of the
current exemplary embodiment. Still, the exemplary embodiments
described in the detailed description, drawings, and claims are not
meant to be limiting. Other embodiments may be utilized, and other
changes may be made, without departing from the spirit or scope of
the subject matter presented herein. It will be readily understood
that the aspects of the present disclosure, as generally described
herein and illustrated in the drawings, may be arranged,
substituted, combined, separated, and designed in a wide variety of
different configurations, all of which are explicitly contemplated
herein.
First Exemplary Embodiment
[0044] <Processing System 10>
[0045] FIG. 1 is a diagram illustrating an example of a processing
system 10. As depicted in FIG. 1, for example, the processing
system 10 includes a processing apparatus 100 and a control
apparatus 200. The processing apparatus 100 is configured to
perform a preset process such as a plasma etching process, a plasma
CVD (Chemical Vapor Deposition) process or a heat treatment on a
semiconductor wafer W as an example of a processing target object.
The control apparatus 200 is configured to control the processing
apparatus 100 based on information sent from various kinds of
sensors such as a temperature sensor provided in the processing
apparatus 100, and configured to allow the processing apparatus 100
to perform the preset process on the semiconductor wafer W which is
placed in the processing apparatus 100.
[0046] <Processing Apparatus 100>
[0047] FIG. 2 is a cross sectional view illustrating an example of
the processing apparatus 100. The processing apparatus 100 includes
a hermetically sealed processing chamber 1, as illustrated in FIG.
2, for example. The processing chamber 1 is made of, by way of
non-limiting example, aluminum having an anodically oxidized
surface and has a substantially cylindrical shape. The processing
chamber 1 is grounded. A mounting table 2 configured to mount
thereon a semiconductor wafer W horizontally is provided within the
processing chamber 1.
[0048] The mounting table 2 includes a base 2a and an electrostatic
chuck 6. The base 2a is made of a conductive metal such as, but not
limited to, aluminum. The mounting table 2 also serves as a lower
electrode. The base 2a is supported on a conductive supporting
table 4. The supporting table 4 is provided on a bottom portion of
the processing chamber 1 with an insulating plate 3 therebetween.
Further, a focus ring 5 made of, by way of non-limiting example,
single crystalline silicon is provided on a periphery portion of a
top surface of the mounting table 2. Further, a cylindrical inner
wall member 3a made of, for example, quartz is provided to surround
the mounting table 2 and the supporting table 4.
[0049] The electrostatic chuck 6 is provided on a top surface of
the base 2a. The electrostatic chuck 6 is configured to attract and
hold the semiconductor wafer W and is also configured to heat the
semiconductor wafer W. The electrostatic chuck 6 includes an
insulator 6b, an electrode 6a embedded in the insulator 6a and a
heater 6c. The electrode 6a is connected to a DC power supply 13. A
Coulomb force is generated on a surface of the electrostatic chuck
6 by a DC voltage applied from the DC power supply 13, and the
semiconductor wafer W is attracted and held on the top surface of
the electrostatic chuck 6 by the generated Coulomb force. An on/off
operation of the DC power supply 13 is controlled by the control
apparatus 200 to be described later. The heater 6c is connected to
a heater power supply 30 and is configured to heat the
electrostatic chuck 6 by a power supplied from the heater power
supply 30. A supply of the power to the heater 6c from the heater
power supply 30 and a stop of the supply of the power to the heater
6c are controlled by the control apparatus 200 to be described
later. Further, in the present exemplary embodiment, a magnitude of
the power supplied to the heater 6c is controlled by the heater
power supply 30 in response to an instruction from the control
apparatus 200 to be described later.
[0050] Further, the electrostatic chuck 6 is also configured to
heat the semiconductor wafer W by heat from the heater 6c. The top
surface of the electrostatic chuck 6 is divided into multiple
division regions, and each division region is provided with the
heater 6c. The top surface of the electrostatic chuck 6 corresponds
to a mounting surface of the mounting table 2.
[0051] A temperature sensor 20 is provided at a bottom surface of
the electrostatic chuck 6. The temperature sensor 20 is connected
to a temperature measuring device 14. Each division region is
provided with the temperature sensor 20, and each temperature
sensor 20 is configured to detect information indicating a
temperature of the electrostatic chuck 6 in each division region
and output the detected information to the temperature measuring
device 14. The temperature measuring device 14 is configured to
measure the temperature of the electrostatic chuck 6 in each
division region based on the information output from the
temperature sensor 20 and output the measured temperature to the
control apparatus 200.
[0052] Formed within the base 2a is a flow path 2b through which a
coolant is flown. The flow path 2b is connected to a chiller unit
33 via pipelines 2c and 2d. The chiller unit 33 is configured to
cool the mounting table 2 by circulating the coolant such as Galden
having a controlled temperature within the flow path 2b via the
pipelines 2c and 2d. The chiller unit 33 controls a start and a
stop of the flow of the coolant into the flow path 2b in response
to an instruction from the control apparatus 200.
[0053] Further, the mounting table 2 is equipped with a pipeline 32
which penetrates the base 2a and the electrostatic chuck 6 and
through which a heat transfer gas (backside gas) such as a helium
gas is supplied to a rear surface of the semiconductor wafer W.
Each division region of the top surface of the electrostatic chuck
6 is provided with the pipeline 32, and each pipeline 32 is
connected to a heat transfer gas supply unit 31. In each division
region, the top surface of the electrostatic chuck 6 is provided
with a multiple number of supply holes through which the heat
transfer gas is supplied. In each division region, the heat
transfer gas supplied from the heat transfer gas supply unit 31 is
introduced via the pipeline 32 into a gap between the top surface
of the electrostatic chuck 6 and the rear surface of the
semiconductor wafer W from the multiple number of supply holes
formed in the top surface of the electrostatic chuck 6. A pressure
of the heat transfer gas can be controlled for each division region
independently. The pressure of the heat transfer gas supplied to
the rear surface of the semiconductor wafer W from the heat
transfer gas supply unit 31 through the pipeline 32 is controlled
by the control apparatus 200 to be described later. Further, the
temperature of the electrostatic chuck 6 is an example of a
temperature of the mounting table on which the semiconductor wafer
W is mounted.
[0054] A shower head 16 is provided above the mounting table 2,
facing the mounting table 2 substantially in parallel, i.e., facing
the semiconductor wafer W mounted on the mounting table 2. The
shower head 16 also serves as an upper electrode. That is, the
shower head 16 and the mounting table 2 are configured as a pair of
electrodes (upper electrode and lower electrode). The base 2a of
the mounting table 2 is connected to a high frequency power supply
12a via a matching device 11a. Further, the base 2a of the mounting
table 2 is also connected to a high frequency power supply 12b via
a matching device 11b.
[0055] The high frequency power supply 12a is configured to supply
a high frequency power of a preset frequency (e.g., 100 MHz) for
plasma generation to the base 2a of the mounting table 2. Further,
the high frequency power supply 12b is configured to supply a high
frequency power of a predetermined frequency (e.g., 13 MHz) for ion
attraction (bias) to the base 2a of the mounting table 2. The
frequency of the high frequency power from the high frequency power
supply 12b is lower than the frequency of the high frequency power
from the high frequency power supply 12a. On/off operations of the
high frequency power supplies 12a and 12b, the high frequency
powers supplied by the high frequency power supplies 12a and 12b,
and so forth are controlled by the control apparatus 200 to be
described later.
[0056] The control apparatus 200 is capable of adjusting the
temperature of the semiconductor wafer W attracted and held on the
top surface of the electrostatic chuck 6 to a preset temperature by
controlling the heater power supply 30, the chiller unit 33 and the
heat transfer gas supply unit 31.
[0057] The shower head 16 is provided at an upper portion of the
processing chamber 1. The shower head 16 includes a main body 16a
and an upper ceiling plate 16b. The shower head 16 is supported at
the upper portion of the processing chamber 1 with an insulating
member 45 therebetween. The main body 16a is formed of, by way of
example, but not limitation, aluminum having an anodically oxidized
surface and supports the upper ceiling plate 16b provided
therebelow in a detachable manner. The upper ceiling plate 16b is
made of a silicon-containing material such as, but not limited to,
quartz.
[0058] A gas diffusion space 16c is formed within the main body
16a. A multiple number of gas through holes 16e is formed in a
bottom portion of the main body 16a to be located under the gas
diffusion space 16c. The upper ceiling plate 16b is provided with
gas discharge holes 16f which are formed through the upper ceiling
plate 16b in a thickness direction thereof. The gas discharge holes
16f respectively communicate with the gas through holes 16e. With
this configuration, a processing gas supplied into the gas
diffusion space 16c is introduced into the processing chamber 1
through the gas through holes 16e and the gas discharge holes 16f
while being diffused in a shower shape. Further, the main body 16a
or the like is equipped with a temperature control mechanism such
as a non-illustrated heater or a non-illustrated pipeline for
circulating a coolant, and a temperature of the shower head 16 can
be controlled within a required temperature range while processing
the semiconductor wafer W.
[0059] The main body 16a of the shower head 16 is also provided
with a gas inlet opening 16g through which the processing gas is
introduced into the gas diffusion space 16c. The gas inlet opening
16g is connected with one end of a pipeline 15b, and the other end
of the pipeline 15b is connected via a valve V and a mass flow
controller MFC 15a to a processing gas supply source 15 which is
configured to supply the processing gas for the processing of the
semiconductor wafer W. The processing gas supplied from the
processing gas supply source 15 is introduced into the gas
diffusion space 16c through the pipeline 15b and is supplied into
the processing chamber 1 through the gas through holes 16e and the
gas discharge holes 16f while being diffused in the shower shape.
The valve V and the MFC 15a are controlled by the control apparatus
200 to be described later.
[0060] The shower head 16 is electrically connected to a variable
DC power supply 42 via a low pass filter LPF 40. The variable DC
power supply 42 is configured to start and stop a supply of a DC
power to the main body 16a through a switch 41. An electric current
and a voltage of the variable DC power supply 42 and an on/off
operation of the switch 41 are controlled by the control apparatus
200 to be described later. For example, when plasma is generated
within a processing space of the processing chamber 1 by applying
the high frequency powers from the high frequency power supplies
12a and 12b to the mounting table 2, the switch 41 is turned on by
the control apparatus 200, when necessary, so that a preset DC
voltage is applied to the shower head 16 which serves as the upper
electrode.
[0061] A gas exhaust opening 71 is formed at the bottom portion of
the processing chamber 1. The gas exhaust opening 71 is connected
with a gas exhaust device 73 via a gas exhaust line 72. The gas
exhaust device 73 includes a vacuum pump, and is capable of
decompressing the inside of the processing chamber 1 to a preset
vacuum level by operating the vacuum pump. A gas exhaust amount by
the gas exhaust device 73 is controlled by the control apparatus
200 to be described later. An opening 74 is formed at a sidewall of
the processing chamber 1, and a gate valve G configured to open or
close the opening 74 is provided at the opening 74.
[0062] A deposition shield 76 is provided along an inner wall of
the processing chamber 1 in a detachable manner. Further, a
deposition shield 77 is provided on outer surfaces of the mounting
table 2, the inner wall member 3a and the supporting table 4. The
deposition shields 76 and 77 are configured to suppress an etching
byproduct (deposit) from adhering to the inner wall of the
processing chamber 1. Further, a conductive member (GND block) 79
which is DC-connected to the ground, is provided at a position of
the deposition shield 76 which is substantially on a level with the
semiconductor wafer W held on the electrostatic chuck 6. The
conductive member 79 is configured to suppress an abnormal
discharge within the processing chamber 1.
[0063] Further, ring magnets 8 are concentrically arranged around
the processing chamber 1. The ring magnets 8 form magnetic fields
in a space between the shower head 16 and the mounting table 2. The
ring magnets 8 are provided to be rotatable by a non-illustrated
rotating device.
[0064] <Electrostatic Chuck 6>
[0065] FIG. 3 is a diagram illustrating an example of the top
surface of the electrostatic chuck 6. FIG. 4 is a diagram
illustrating an example of a cross section taken along a line A-A
of FIG. 3. Around the electrostatic chuck 6, the focus ring 5 is
provided to surround the electrostatic chuck 6. The top surface of
the electrostatic chuck 6 on which the semiconductor wafer W is
placed is divided into multiple concentric division regions, for
example. In the present exemplary embodiment, the top surface of
the electrostatic chuck 6 is divided into two division regions 60a
and 60b, for example. Further, in the following description, the
division region 60a may also be referred to as a center region, and
the division region 60b may also be referred to as an edge region.
Furthermore, in the following description, when it is not necessary
to distinguish the division regions 60a and 60b, they will be
generically referred to as a division region 60.
[0066] By way of example, as depicted in FIG. 4, the heater 6c is
provided under each division region 60 within the electrostatic
chuck 6 to correspond to each division region 60. Alternatively,
the heater 6c may be provided at the outside of the electrostatic
chuck 6. The control apparatus 200 is capable of controlling
temperatures of the individual division regions 60 independently by
controlling the powers supplied to the heaters 6c from the heater
power supply 30.
[0067] For instance, as illustrated in FIG. 4, at least one
temperature sensor 20 is provided at the bottom surface of the
electrostatic chuck 6 to correspond to each division region 60. In
the present exemplary embodiment, one temperature sensor 20 is
provided at a region 21a within the division region 60a and another
temperature sensor 20 is provided at a region 21b within the
division region 60b, as illustrated in FIG. 3.
[0068] The temperature sensor 20 includes, as shown in FIG. 4, a
temperature sensing body 22 and a detecting unit 23. A
characteristic of the temperature sensing body 22 is changed
depending on a temperature. In the present exemplary embodiment,
the temperature sensing body 22 is a fluorescent substance and the
fluorescence characteristic thereof varies depending on a
temperature of the electrostatic chuck 6. The detecting unit 23 is
configured to detect the characteristic of the temperature sensing
body 22 which is changed depending on the temperature, and output
the detecting result to the temperature measuring device 14. In the
present exemplary embodiment, the detecting unit 23 may be, by way
of non-limiting example, an optical fiber and is configured to
irradiate pulse light output from the temperature measuring device
14 to the temperature sensing body 22 and transmit light emitted
from the temperature sensing device 22 depending on the irradiated
pulse light.
[0069] The temperature measuring device 14 is configured to measure
the temperature of each division region 60 based on a signal
outputted from the temperature sensor 20 provided in each division
region 60, and is configured to output information of the measured
temperature for each division region 60 to the control apparatus
200. For example, the temperature measuring device 14 transmits the
pulse light to the temperature sensing body 22 through the
detecting unit 23, and measures the temperature of each division
region 60 where the corresponding temperature sensing body 22 is
provided, based on the optical attenuation rate of the light of the
temperature sensing body 22 received through the detecting unit
23.
[0070] <Control Apparatus 200>
[0071] FIG. 5 is a block diagram illustrating an example of the
control apparatus 200. The control apparatus 200 includes, as
depicted in FIG. 5, a heat transfer gas control unit 201, an
acquisition unit 202, a calculation unit 203, a storage unit 204, a
temperature control unit 205 and a processing control unit 206.
[0072] The storage unit 204 is configured to store therein a
correction table 2040 as illustrated in FIG. 6, for example. FIG. 6
is a diagram illustrating an example of the correction table 2040
according to the first exemplary embodiment. Individual tables 2041
for the corresponding division regions 60 are stored in the
correction table 2040. Stored in each individual table 2041 are
correction values which are applied when controlling the
temperature of the electrostatic chuck 6 to a preset temperature.
In each individual table 2041, the correction values corresponding
to gradients of the temperature variations of the electrostatic
chuck 6 are provided.
[0073] Referring back to FIG. 5, the heat transfer gas control unit
201 is configured to instruct the heat transfer gas supply unit 31
to start or stop the supply of the heat transfer gas in response to
an instruction from the calculation unit 203. Further, the heat
transfer gas control unit 201 is configured to send an instruction
indicating a pressure of the heat transfer gas to the heat transfer
gas supply unit 31 in response to an instruction from the
calculation unit 203.
[0074] The acquisition unit 202 is configured to acquire
information of the measured temperature in each division region 60
from the temperature measuring device 14. Then, the acquisition
unit 202 is configured to output the acquired information of the
temperature in each division region 60 to the calculation unit 203
and the temperature control unit 205. Further, when creating the
correction table 2040, the acquisition unit 202 is configured to
acquire information of a temperature of a temperature measurement
wafer W' which is loaded into the processing chamber 1 of the
processing apparatus 100, and output the acquired information to
the calculation unit 203.
[0075] The temperature measurement wafer W' includes a multiple
number of temperature sensors provided on a surface of the
temperature measurement wafer W'; and a communication unit
configured to output information of temperatures measured by the
temperature sensors to the control apparatus 200. When mounted on
the electrostatic chuck 6, at least one temperature sensor is
provided at each region on the temperature measurement wafer W'
corresponding to each division region 60 of the electrostatic chuck
6. The communication unit is configured to wirelessly transmit the
information of the temperature of each division region 60 measured
by the corresponding temperature sensor to the control apparatus
200. Further, the communication unit may be configured to transmit
the information of the temperature of each division region 60 to
the control apparatus 200 through wire communications. Further, the
temperature measurement wafer W' may be equipped with a
non-volatile storage memory instead of the communication unit and
may store the information of the temperature of each division
region 60 measured by the corresponding temperature sensor in the
storage memory. In such a case, after the temperature measurement
wafer W' is taken out from the processing chamber 1, the
acquisition unit 202 of the control apparatus 200 reads out the
information of the temperature in each division region 60 measured
by the corresponding temperature sensor from the storage
memory.
[0076] The temperature control unit 205 is configured to control
the heater power supply 30 and the chiller unit 33 in response to
instructions from the calculation unit 203. If the calculation unit
203 instructs the temperature control unit 205 to start cooling of
the electrostatic chuck 6, the temperature control unit 205
instructs the chiller unit 33 to circulate the coolant of a preset
temperature through the flow path 2b of the base 2a. Further, in
response to an instruction from the calculation unit 203 to stop
the supply of the power to the heater 6c within the electrostatic
chuck 6 or to maintain the power supplied to the heater 6c to be
constant, the temperature control unit 205 instructs the heater
power supply 30 to stop the supply of the power to the heater 6c or
to maintain the power supplied to the heater 6c to be constant.
[0077] Furthermore, when creating the correction table 2040, the
temperature control unit 205 receives information of a target
temperature from the processing control unit 206. In response to an
instruction from the calculation unit 203 to start the supply of
the power to the heater 6c, the temperature control unit 205
instructs the heater power supply 30 to start the supply of the
power to the heater 6c. Further, based on the temperature
information of each division region 60 output from the acquisition
unit 202, the temperature control unit 205 feedback-controls the
power supplied to the heater 6c provided in each division region 60
such that the temperature of the division region 60 reaches the
target temperature.
[0078] Further, when processing the semiconductor wafer W, the
temperature control unit 205 receives a correction value of each
division region 60 from the calculation unit 203 and receives
information of a target temperature from the processing control
unit 206. In response to an instruction from the calculation unit
203 to start the supply of the power to the heater 6c, the
temperature control unit 205 instructs the heater power supply 30
to start the supply of the power to the heater 6c. Then, the
temperature control unit 205 corrects the target temperature of
each division region 60 based on the correction value. Then, based
on the temperature information of each division region 60 output
from the acquisition unit 202, the temperature control unit 205
feedback-controls the power supplied to the heater 6c such that the
temperature of each division region 60 reaches a corrected target
temperature. Accordingly, the temperature of the semiconductor
wafer W mounted on the electrostatic chuck 6 is controlled to reach
a temperature which amounts to a sum of the corrected target
temperature and a temperature difference generated between the
semiconductor wafer W and the electrostatic chuck 6 due to a
thermal resistance therebetween. The calculation unit 203 corrects
the target temperature by decreasing the target temperature when
the thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6 is high, and corrects the target temperature
by increasing the target temperature when the thermal resistance
between the semiconductor wafer W and the electrostatic chuck 6 is
low. Accordingly, the temperature control unit 205 is capable of
suppressing non-uniformity in temperatures of multiple
semiconductor wafers W even in case that the thermal resistance
between the semiconductor wafers W and the electrostatic chuck 6 is
changed.
[0079] When creating the correction table 2040, the processing
control unit 206 outputs the target temperature in creating the
correction table 2040 to the temperature control unit 205 in
response to an instruction from the calculation unit 203. Then, the
processing control unit 206 controls the individual components of
the processing apparatus 100 in response to instructions from the
calculation unit 203. Further, when processing the semiconductor
wafer W, the processing control unit 206 outputs a target
temperature specified in a processing recipe set by an operator of
the processing apparatus 100 or the like to the temperature control
unit 205. Then, the processing control unit 206 processes the
semiconductor wafer W by controlling the individual components of
the processing apparatus 100 based on the processing recipe.
[0080] The calculation unit 203 controls the heat transfer gas
control unit 201, the temperature control unit 205 and the
processing control unit 206 when creating the correction table 2040
and when processing the semiconductor wafer W. Now, referring to
FIG. 7A to FIG. 8C, details of processes performed by the
calculation unit 203 will be discussed.
[0081] <Creation of Correction Table 2040>
[0082] FIG. 7A to FIG. 7C are diagrams illustrating examples of the
temperature variations of the temperature measurement wafer W' and
the electrostatic chuck 6 creating the correction table 2040. FIG.
7A to FIG. 7C illustrate examples of the temperature variations of
the temperature measurement wafer W' and the electrostatic chuck 6
at a region corresponding to one division region (e.g., center
region) on the electrostatic chuck 6. Further, in the following
description, with regard to the correction table 2040, a process of
creating an individual table 2041 for the one division region 60
will be explained. Since a process of creating an individual table
2041 for another division region 60 is the same as this process,
the process of creating the individual table 2041 for another
division region 60 will be omitted herein.
[0083] FIG. 7A shows examples of the temperature variations of the
temperature measurement wafer W' and the electrostatic chuck when a
pressure of the heat transfer gas is 5 Torr; FIG. 7B, when a
pressure of the heat transfer gas is 10 Torr; and FIG. 7C, when the
pressure of the heat transfer gas is 20 Torr. In FIG. 7A to FIG.
7C, a graph 80 indicates the temperature variation of the
temperature measurement wafer W' and a graph 81 indicates the
temperature variation of the electrostatic chuck 6.
[0084] When creating the correction table 2040, the calculation
unit 203 first instructs the temperature control unit 205 to start
the cooling of the electrostatic chuck 6 and to stop the supply of
the power to the heater 6c or maintain the power supplied to the
heater 6c to be constant. Accordingly, the electrostatic chuck 6 is
cooled through the base 2a which is cooled by the coolant
circulated within the flow path 2b of the base 2a. Then, the
calculation unit 203 instructs a non-illustrated transfer robot to
carry the temperature measurement wafer W' into the processing
chamber 1 and mount the temperature measurement wafer W' on the
electrostatic chuck 6.
[0085] Further, as illustrated in FIG. 7A to FIG. 7C, at a time
t.sub.0 when the temperature measurement wafer W' is mounted on the
electrostatic chuck 6, the temperature measurement wafer W' is kept
to have a room temperature (e.g., 30.degree. C.) and the
electrostatic chuck 6 is cooled to have a temperature (e.g.,
10.degree. C.) lower than the room temperature. That is, at the
stage where the temperature measurement wafer W' is mounted on the
electrostatic chuck 6, the temperatures of the temperature
measurement wafer W' and the electrostatic chuck 6 are
different.
[0086] Subsequently, the calculation unit 203 begins temperature
measurements of the temperature measurement wafer W' and the
electrostatic chuck 6 in each division region 60 by starting
acquisition of temperature information of the electrostatic chuck 6
in each division region 60 from the acquisition unit 202. Then, at
a time t.sub.1 shown in FIG. 7A to FIG. 7C, the calculation unit
203 instructs the heat transfer gas control unit 201 to start the
supply of the heat transfer gas of a preset pressure. In the
present exemplary embodiment, the calculation unit 203 instructs
the heat transfer gas control unit 201 to set 5 Torr, 10 Torr or 20
Torr as the pressure of the heat transfer gas. The heat transfer
gas control unit 201 then instructs the heat transfer gas control
unit 31 to supply, for each division region 60, the heat transfer
gas of the pressure designated by the calculation unit 203.
Accordingly, in each division region 60, the heat transfer gas is
supplied into a gap between the top surface of the electrostatic
chuck 6 and the rear surface of the temperature measurement wafer
W' at the time t.sub.1, so that heat exchange between the
temperature measurement wafer W' and the electrostatic chuck 6
through the heat transfer gas is begun. Through this heat exchange
between the temperature measurement wafer W' and the electrostatic
chuck 6, the temperature of the temperature measurement wafer W' is
decreased, whereas the temperature of the electrostatic chuck 6 is
increased, as shown in FIG. 7A to FIG. 7C, for example.
[0087] Then, the calculation unit 203 instructs the temperature
control unit 205 to start the supply of the power to the heater 6c
at a time t.sub.2 upon the lapse of a preset time (e.g., about 10
seconds) from the time t.sub.1. The temperature control unit 205
instructs the heater power supply 30 to start the supply of the
power to the heaters 6c and feedback-controls the power supplied to
the heaters 6c such that the temperature of each division region 60
reaches a target temperature (e.g., 60.degree. C.). Accordingly, in
each division region 60, the temperature of the electrostatic chuck
6 and the temperature of temperature measurement wafer W' gradually
approach the target temperature, as shown in FIG. 7A to FIG. 7C,
for example.
[0088] Subsequently, at a time t.sub.3 when the temperatures of the
electrostatic chuck 6 and the temperature measurement wafer W' are
stabilized, the processing control unit 206 begins a control over
the supply of the high frequency power or the processing gas based
on the processing recipe used when creating the correction table
2040. By way of example, the processing control unit 206 instructs
the high frequency power supply 12a and the high frequency power
supply 12b to start the supply of the high frequency powers, and
controls the valve V and the MFC 15a such that the processing gas
of a preset flow rate is supplied into the processing chamber 1. As
a result, plasma of the processing gas is generated within the
processing chamber 1 of the processing apparatus 100. At this time,
as shown in FIG. 7A to FIG. 7C, for example, the temperature of the
temperature measurement wafer W' is increased due to the heat input
from the plasma generated within the processing chamber 1. The heat
input from the plasma is transferred to the electrostatic chuck 6
and is radiated from the electrostatic chuck 6. Since, however,
there exists a thermal resistance between the temperature
measurement wafer W' and the electrostatic chuck 6, there is
generated a temperature difference between the temperature
measurement wafer W' and the electrostatic chuck 6 due to the
thermal resistance.
[0089] In the example of FIG. 7A where the pressure of the heat
transfer gas is 5 Torr, the temperature of the temperature
measurement wafer W' is increased up to, e.g., T.sub.a=74.4.degree.
C. due to the heat input from the plasma. Since the electrostatic
chuck 6 is regulated to have a temperature of about 60.degree. C.
by the temperature control unit 205, a temperature difference
.DELTA.T.sub.a between the electrostatic chuck 6 and the
temperature measurement wafer W' whose temperature is increased due
to the heat input from the plasma is 14.4.degree. C. Further, in
the example of FIG. 7B where the pressure of the heat transfer gas
is 10 Torr, the temperature of the temperature measurement wafer W'
is increased up to, e.g., T.sub.b=69.9.degree. C. due to the heat
input from the plasma. Thus, a temperature difference
.DELTA.T.sub.b between the electrostatic chuck 6 and the
temperature measurement wafer W' the temperature of which is
increased due to the heat input from the plasma is 9.9.degree. C.
Further, in the example of FIG. 7C where the pressure of the heat
transfer gas is 20 Torr, the temperature of the temperature
measurement wafer W' is increased up to, e.g., T.sub.c=66.6.degree.
C. due to the heat input from the plasma. Thus, a temperature
difference .DELTA.T.sub.c between the electrostatic chuck 6 and the
temperature measurement wafer W' the temperature of which is
increased due to the heat input from the plasma is 6.6.degree.
C.
[0090] In addition, at the time t.sub.3, as frequencies and power
levels of the high frequency powers supplied into the processing
chamber 1 and as the kind and the flow rate of the processing gas,
it is desirable to use the frequencies and the power levels of the
high frequency powers and the kind and the flow rate of the
processing gas specified in the processing recipe for processing
the semiconductor wafer W. As a result, it is possible to measure
the temperature of the temperature measurement wafer W' in a
processing environment where the semiconductor wafer W is actually
processed.
[0091] The calculation unit 203 instructs the processing control
unit 206 to stop the performing of the processing recipe.
Accordingly, the generation of the plasma within the processing
chamber 1 is stopped. Further, the calculation unit 203 instructs
the temperature control unit 205 to stop the supply of the power to
the heater 6c or to maintain the power supplied to the heater 6c to
be constant, and instructs the heat transfer gas control unit 201
to stop the supply of the heat transfer gas. Accordingly, the
temperature of the temperature measurement wafer W' mounted on the
electrostatic chuck 6 is gradually returned to the room temperature
(e.g., 30.degree. C.), and the temperature of the electrostatic
chuck 6 is gradually returned to the temperature (e.g., 10.degree.
C.) lower than the room temperature by the chiller unit 33.
[0092] The calculation unit 203 measures the temperature variations
of the temperature measurement wafer W' and the electrostatic chuck
6 by performing the above-described process on each division region
with the heat transfer gas of each pressure. Further, With respect
to the heat transfer gas of each pressure, the calculation unit 203
calculates, for each division region, a gradient of the temperature
variation of the electrostatic chuck 6 between the time t.sub.1 and
the time t.sub.2 from the measurement data of the temperature
variation. Here, a method of calculating the gradient of the
temperature variation of the electrostatic chuck 6 will be
described with reference to FIG. 8A to FIG. 8C.
[0093] FIG. 8A to FIG. 8C are enlarged views illustrating the
examples of the temperature variations of the temperature
measurement wafer W' and the electrostatic chuck 6 when creating
the correction table. FIG. 8A to FIG. 8C shows the examples of the
temperature variations of the temperature measurement wafer W' and
the electrostatic chuck 6 at a region corresponding to one division
region (e.g., center region) on the electrostatic chuck 6. FIG. 8A
is an enlarged view of graphs near the time t.sub.1 in FIG. 7A;
FIG. 8B, an enlarged view of graphs near the time t.sub.1 in FIG.
7B; and FIG. 8C, an enlarged view of graphs near the time t.sub.1
in FIG. 7C.
[0094] The calculation unit 203 measures the gradient of the
temperature variation of the electrostatic chuck 6 in a period
between a time t.sub.11 upon the lapse of a first time from the
time t.sub.1 when the supply of the heat transfer gas is begun and
a time t.sub.12 upon the lapse of a second time .DELTA.t from the
time t.sub.11, as illustrated in FIG. 8A to FIG. 8C, for example.
In the present exemplary embodiment, the first time is, e.g., 1
second, and the second time .DELTA.t is, e.g., 5 seconds. As
depicted in FIG. 8A to FIG. 8C, the gradient of the temperature
variation of the electrostatic chuck 6 from the time t.sub.11 to
the time t.sub.12 varies depending on the pressure of the heat
transfer gas. It is because the thermal resistance between the
temperature measurement wafer W' and the electrostatic chuck 6
varies depending on the pressure of the heat transfer gas.
[0095] With respect to each pressure of the heat transfer gas, the
calculation unit 203 acquires, from the measurement data of the
temperature variation, the temperatures (for example, T.sub.a,
T.sub.b and T.sub.c shown in FIG. 7A to FIG. 7C) of the temperature
measurement wafer W' during the plasma generation for each division
region. FIG. 9 is a diagram illustrating examples of the data 62 in
which the gradient of the temperature variation of the
electrostatic chuck 6 and the temperature of the temperature
measurement wafer W' is provided for each pressure of the heat
transfer gas. As depicted in the data 62 of FIG. 9, for example,
the calculation unit 203 calculates, for each pressure of the heat
transfer gas, the gradient of the temperature variation of the
electrostatic chuck 6 in each division region 60, and acquires the
temperature of the temperature measurement wafer W' during the
plasma generation. Further, for each division region, the
calculation unit 203 calculates a correction value T.sub.off for
each pressure of the heat transfer gas based on the following
expression (1), for example.
T.sub.off=T.sub.r-T.sub.m (1)
[0096] Here, T.sub.m denotes the temperature of the temperature
measurement wafer W' during the plasma generation, and T.sub.r
represents a reference temperature.
[0097] In the present exemplary embodiment, for example, the
temperature T.sub.m of the temperature measurement wafer W' in case
that the pressure of the heat transfer gas is 10 Torr is set as the
reference temperature T.sub.r. Thus, in the data 62 shown in FIG.
9, the reference temperature T.sub.r is 69.9.degree. C. at the
center region, and the reference temperature T.sub.r is
72.2.degree. C. at the edge region. In the data 62 of FIG. 9, for
example, when the pressure of the heat transfer gas is 5 Torr, the
temperature T.sub.m of the temperature measurement wafer W' at the
center region is 74.4.degree. C. Thus, the calculation unit 203
calculates a value of 69.9-74.4=-4.5 as the correction value
T.sub.off at the center region for the case where the pressure of
the heat transfer gas is 5 Torr. Likewise, in the data 62 of FIG.
9, for example, when the pressure of the heat transfer gas is 20
Torr, the temperature T.sub.m of the temperature measurement wafer
W' at the center region is 66.6.degree. C. Thus, the calculation
unit 203 calculates a value of 69.9-66.6=+3.3 as the correction
value T.sub.off at the center region for the case where the
pressure of the heat transfer gas is 20 Torr.
[0098] The calculation unit 203 creates, for each division region,
the individual table 2041 (see FIG. 6) in which the gradient of the
temperature variation of the electrostatic chuck 6 corresponds to
the correction value T.sub.off for each pressure of the heat
transfer gas. Then, the calculation unit 203 stores the correction
table 2040 including the created individual table 2041 in the
storage unit 204.
[0099] Here, the thermal resistance between the temperature
measurement wafer W' and the electrostatic chuck 6 can be estimated
from the gradient of the temperature variation of each of the
temperature measurement wafer W' and the electrostatic chuck 6 in
case that the heat is exchanged between the temperature measurement
wafer W' and the electrostatic chuck 6 having a preset temperature
difference. For example, in case that the thermal resistance
between the temperature measurement wafer W' and the electrostatic
chuck 6 is low, the gradient of the temperature variation of the
electrostatic chuck 6 increases. On the other hand, in case that
the thermal resistance between the temperature measurement wafer W'
and the electrostatic chuck 6 is high, the gradient of the
temperature variation of the electrostatic chuck 6 decreases.
Further, in case that the thermal resistance between the
temperature measurement wafer W' and the electrostatic chuck 6 is
high, the temperature difference between the temperature
measurement wafer W' and the electrostatic chuck 6 during the
plasma generation is increased, whereas in case that the thermal
resistance between the temperature measurement wafer W' and the
electrostatic chuck 6 is low, the temperature difference between
the temperature measurement wafer W' and the electrostatic chuck 6
during the plasma generation is decreased.
[0100] In consideration of the above, in the present exemplary
embodiment, in case that the thermal resistance between the
temperature measurement wafer W' and the electrostatic chuck 6 is
high, that is, in case that the gradient of the temperature
variation of the electrostatic chuck 6 is small, a correction value
for decreasing the target temperature of the electrostatic chuck 6
is calculated. Meanwhile, in case that the thermal resistance
between the temperature measurement wafer W' and the electrostatic
chuck 6 is low, that is, in case that the gradient of the
temperature variation of the electrostatic chuck 6 is large, a
correction value for increasing the target temperature of the
electrostatic chuck 6 is calculated. Further, a difference between
the temperature of the temperature measurement wafer W' measured
during the plasma generation and the reference temperature is set
to be a magnitude of the correction value. When processing the
semiconductor wafer W, the temperature variation of the
electrostatic chuck 6 on which the semiconductor wafer W is mounted
is measured, and the correction value corresponding to the gradient
of the temperature variation of the electrostatic chuck 6 is
applied to the target temperature of the electrostatic chuck 6 at
the time of performing the plasma process on the semiconductor
wafer W. Accordingly, it is possible to suppress the temperature of
the semiconductor wafer W from being changed for the multiple
semiconductor wafers W during the plasma process due to the
variation in the thermal resistance between the semiconductor wafer
W and the electrostatic chuck 6.
[0101] <Correction in Processing Semiconductor Wafer W>
[0102] FIG. 10A to FIG. 10C are diagrams illustrating examples of
the temperature variations of the temperature measurement wafer W'
and the electrostatic chuck 6 in case that the correction values
are applied. FIG. 10A to FIG. 10C illustrate examples of the
temperature variations of the temperature measurement wafer W' and
the electrostatic chuck 6 at a region corresponding to one division
region (e.g., center region) on the electrostatic chuck 6. FIG. 10A
illustrates an example of the temperature variations of the
temperature measurement wafer W' and the electrostatic chuck 6 when
the pressure of the heat transfer gas is 5 Torr; FIG. 10B, when the
pressure of the heat transfer gas is 10 Torr; and FIG. 10C, when
the pressure of the heat transfer gas is 20 Torr.
[0103] Here, as the number of the semiconductor wafers W processed
by the processing apparatus 100 increases, that is, as the total
processing time in the processing apparatus 100 increases, the
variation in the thermal resistance between the semiconductor wafer
W and the electrostatic chuck 6 increases due to a change in the
environment within the processing chamber 1. By way of example,
when a process of depositing a preset film on multiple
semiconductor wafers W is performed, an adhesion amount of deposits
increases as the total processing time increases, so that the
thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6 is decreased. The thermal resistance between
the semiconductor wafer W and the electrostatic chuck 6 can be
controlled by adjusting the pressure of the heat transfer gas
supplied into the gap between the semiconductor wafer W and the
electrostatic chuck 6. Thus, in FIG. 10A to FIG. 10C, the variation
in the thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6 is simulated while varying the pressure of
the heat transfer gas.
[0104] The thermal resistance between the semiconductor wafer W and
the electrostatic chuck 6 when the pressure of the heat transfer
gas is 5 Torr (FIG. 10A) corresponds to a thermal resistance when
the total processing time upon the semiconductor wafers W is, for
example, zero (0), that is, a thermal resistance between an unused
electrostatic chuck 6 and the semiconductor wafer W. Further, the
thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6 when the pressure of the heat transfer gas is
10 Torr (FIG. 10B) corresponds to a thermal resistance between the
electrostatic chuck 6 and the semiconductor wafer W when the total
processing time upon the semiconductor wafers W is, for example, 30
hours. Furthermore, the thermal resistance between the
semiconductor wafer W and the electrostatic chuck 6 when the
pressure of the heat transfer gas is 20 Torr (FIG. 10C) corresponds
to a thermal resistance between the electrostatic chuck 6 and the
semiconductor wafer W when the total processing time upon the
semiconductor wafers W is, for example, 60 hours. In addition, in
FIG. 10A to FIG. 10C, the temperature measurement wafer W' in order
to monitor the temperature of the wafer is used, and the same
temperature variation as shown in FIG. 10A to FIG. 10C takes place
when processing the semiconductor wafer W. Thus, in the following,
description will be provided in case of processing the
semiconductor wafer W.
[0105] In processing the semiconductor wafer W, the calculation
unit 203 first instructs the temperature control unit 205 to start
cooling of the electrostatic chuck 6 and to stop the supply of the
power to the heater 6c or maintain the power supplied to the heater
6c to be constant. Accordingly, the electrostatic chuck 6 is cooled
through the base 2a which is cooled by the coolant circulated
within the flow path 2b of the base 2a. Further, the calculation
unit 203 instructs the processing control unit 206 to perform the
processing recipe for the semiconductor wafer W. Based on the
processing recipe, the processing control unit 206 sends the
instruction indicating the target temperature of the electrostatic
chuck 6 in processing the semiconductor wafer W to the temperature
control unit 205. Then, the calculation unit 203 instructs the
non-illustrated transfer robot to carry a semiconductor wafer W
into the processing chamber 1 and mount the semiconductor wafer W
on the electrostatic chuck 6. At the time t.sub.0 when the
semiconductor wafer W is mounted on the electrostatic chuck 6, the
semiconductor wafer W is kept to have a room temperature (e.g.,
30.degree. C.) and the electrostatic chuck 6 is cooled to have a
temperature (e.g., 10.degree. C.) lower than the room
temperature.
[0106] Subsequently, the calculation unit 203 begins temperature
measurement of the electrostatic chuck 6 in each division region 60
by starting acquisition of temperature information of the
electrostatic chuck 6 in each division region 60 from the
acquisition unit 202. Then, at the time t.sub.1 shown in FIG. 10A
to FIG. 10C, the calculation unit 203 instructs the heat transfer
gas control unit 201 to start the supply of the heat transfer gas
having a pressure specified in the processing recipe of the
semiconductor wafer W. Accordingly, for each division region 60,
the heat transfer gas is supplied into the gap between the top
surface of the electrostatic chuck 6 and the rear surface of the
semiconductor wafer W at the time t.sub.1, so that the heat
exchange between the semiconductor wafer W and the electrostatic
chuck 6 through the heat transfer gas is begun. Through this heat
exchange between the semiconductor wafer W and the electrostatic
chuck 6, the temperature of the semiconductor wafer W is decreased,
whereas the temperature of the electrostatic chuck 6 is increased,
as shown in FIG. 10A to FIG. 10C, for example.
[0107] Then, the calculation unit 203 measures, in each division
region 60, a gradient of a temperature variation of the
electrostatic chuck 6 in a period between the time t.sub.11 upon
the lapse of the first time from the time t.sub.1 when the supply
of the heat transfer gas is begun and the time t.sub.12 upon the
lapse of the second time from the time t.sub.11. Further, the
calculation unit 203 refers to the individual table 2041 for each
division region 60 in the storage unit 204 and acquires the
correction value corresponding to the gradient of the measured
temperature variation of the electrostatic chuck 6. For example, in
the present exemplary embodiment, for each division region 60, the
calculation unit 203 selects, from the individual table 2041, the
gradient which is closest to the gradient of the measured
temperature variation of the electrostatic chuck 6 and acquires the
correction value corresponding to the selected gradient. As another
example, the calculation unit 203 may calculate a fitting curve
which approximates a relationship between the gradient and the
correction value in the individual table 2041 and acquire the
correction value on the fitting curve corresponding to the gradient
of the measured temperature variation of the electrostatic chuck
6.
[0108] The calculation unit 203 outputs the correction value
acquired for each division region 60 to the temperature control
unit 205. Then, at the time t.sub.2 upon the lapse of a preset time
from the time t.sub.1, the calculation unit 203 instructs the
temperature control unit 205 to start the supply of the power to
the heater 6c. For each division region 60, the temperature control
unit 205 corrects the target temperature by adding the correction
value obtained from the calculation unit 203 to the target
temperature instructed from the processing control unit 206. Then,
the temperature control unit 205 feedback-controls the power of the
heater 6c such that the temperature of the electrostatic chuck 6
reaches the corrected target temperature in each division region
60. Accordingly, the electrostatic chuck 6 is controlled to have
the target temperature to which the correction value according to
the temperature variation of the electrostatic chuck 6 in a period
from the time t.sub.1 when the supply of the heat transfer gas is
begun to the time t.sub.2 when the supply of the power to the
heater 6c is begun is applied. Further, when the correction value
for each division region 60 is output from the calculation unit
203, without waiting until the time t.sub.2, the temperature
control unit 205 may feedback-control the power of the heater 6c
such that the temperature of the electrostatic chuck 6 reaches the
target temperature which is corrected by the correction value
designated by the calculation unit 203.
[0109] At the time t.sub.3 when the temperatures of the
electrostatic chuck 6 and the semiconductor wafer W are stabilized,
the processing control unit 206 begins the control over the supply
of the processing gas or the high frequency power according to the
processing recipe for the semiconductor wafer W. Accordingly, the
plasma of the processing gas is generated within the processing
chamber 1, and a preset process is performed on the semiconductor
wafer W by the plasma. At this time, the temperature of the
semiconductor wafer W is increased due to the heat input from the
plasma.
[0110] Here, in the example of FIG. 10A where the pressure of the
heat transfer gas is 5 Torr, the gradient of the temperature
variation of the electrostatic chuck 6 at the center region before
the beginning of the supply of the power to the heater 6c is 0.23.
Accordingly, in case that the correction table 2040 shown in FIG. 6
is stored in the storage unit 204, the calculation unit 203
acquires a value of, e.g., -4.5 as the correction value. Further,
when the target temperature is 60.degree. C., the temperature
control unit 205 acquires a value of 55.5.degree. C. as the
corrected target temperature and feedback-controls the power of the
heater 6c such that the temperature of the center region of the
electrostatic chuck 6 reaches 55.5.degree. C. Since the temperature
difference .DELTA.T.sub.a between the semiconductor wafer W and the
electrostatic chuck 6 when the pressure of the heat transfer gas is
5 Torr is 14.4.degree. C. as explained in FIG. 7A, the temperature
T.sub.a' of the semiconductor wafer W during the plasma process is
controlled to about 70.degree. C.
[0111] Further, in the example of FIG. 10B where the pressure of
the heat transfer gas is 10 Torr, the gradient of the temperature
variation of the electrostatic chuck 6 at the center region before
the beginning of the supply of the power to the heater 6c is 0.33.
Accordingly, in case that the correction table 2040 shown in FIG. 6
is stored in the storage unit 204, the calculation unit 203
acquires a value of, e.g., zero (0) as the correction value.
Further, when the target temperature is 60.degree. C., the
temperature control unit 205 acquires a value of 60.degree. C. as
the corrected target temperature and feedback-controls the power of
the heater 6c such that the temperature of the center region of the
electrostatic chuck 6 reaches 60.degree. C. Since the temperature
difference .DELTA.T.sub.b between the semiconductor wafer W and the
electrostatic chuck 6 when the pressure of the heat transfer gas is
10 Torr is 9.9.degree. C. as explained in FIG. 7B, the temperature
T.sub.b' of the semiconductor wafer W during the plasma process is
controlled to about 70.degree. C.
[0112] Furthermore, in the example of FIG. 10C where the pressure
of the heat transfer gas is 20 Torr, the gradient of the
temperature variation of the electrostatic chuck 6 at the center
region before the beginning of the supply of the power to the
heater 6c is 0.42. Accordingly, in case that the correction table
2040 illustrated in FIG. 6 is stored in the storage unit 204, the
calculation unit 203 acquires a value of, e.g., +3.3 as the
correction value. Further, when the target temperature is
60.degree. C., the temperature control unit 205 acquires a value of
63.3.degree. C. as the corrected target temperature and
feedback-controls the power of the heater 6c such that the
temperature of the center region of the electrostatic chuck 6
reaches 63.3.degree. C. Since the temperature difference
.DELTA.T.sub.c between the semiconductor wafer W and the
electrostatic chuck 6 when the pressure of the heat transfer gas is
20 Torr is 6.6.degree. C. as explained in FIG. 7C, the temperature
T.sub.c' of the semiconductor wafer W during the plasma process is
controlled to about 70.degree. C.
[0113] As stated above, the temperature sensor 20 feedback-controls
the power supplied to the heater 6c such that the target
temperature of the electrostatic chuck 6 is decreased when the
thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6 is high, that is, when the gradient of the
temperature variation of the electrostatic chuck 6 is small and
such that the target temperature of the electrostatic chuck 6 is
increased when the thermal resistance between the semiconductor
wafer W and the electrostatic chuck 6 is small, that is, when the
gradient of the temperature variation of the electrostatic chuck 6
is large. Accordingly, even in case that the thermal resistance
between the semiconductor wafer W and the electrostatic chuck 6 is
changed in the course of processing multiple semiconductor wafers
W, it is possible to suppress the temperature of the semiconductor
wafer W from becoming non-uniform between the multiple
semiconductor wafers W.
[0114] <Process Flow for Creating Correction Table 2040>
[0115] FIG. 11 is a flowchart illustrating an example of a process
of creating the correction table according to the first exemplary
embodiment. Prior to performing the process shown in FIG. 11, the
heater power supply 30 stops or maintains the supply of the power
to the heater 6c, and the electrostatic chuck 6 is cooled to have a
preset temperature by the coolant which is circulated within the
base 2a. Further, the temperature measurement wafer W' has a room
temperature.
[0116] First, the calculation unit 203 instructs the
non-illustrated transfer robot to carry the temperature measurement
wafer W' into the processing chamber 1 and mount the temperature
measurement wafer W' on the electrostatic chuck 6 (S100). Then, the
calculation unit 203 selects, for each division region 60, the
pressure of the heat transfer gas supplied into the gap between the
temperature measurement wafer W' and the electrostatic chuck 6
(S101). In the present exemplary embodiment, the calculation unit
203 selects 5 Torr, 10 Torr and 20 Torr as the pressure of the heat
transfer gas in sequence.
[0117] Subsequently, the calculation unit 203 starts acquisition of
the temperature information of the electrostatic chuck 6 in each
division region 60 from the acquisition unit 202 (S102). Then, the
calculation unit 203 instructs the heat transfer gas control unit
201 to start the supply of the heat transfer gas of the pressure
which is selected for each division region 60 in the process S101.
Accordingly, the supply of the heat transfer gas into the gap
between the temperature measurement wafer W' and the electrostatic
chuck 6 is begun for each division region 60 (S103). Thus, the heat
exchange between the temperature measurement wafer W' and the
electrostatic chuck 6 through the heat transfer gas is begun.
[0118] Thereafter, the calculation unit 203 waits until a preset
time (e.g., about 10 seconds) elapses from the beginning of the
supply of the heat transfer gas (S104). Then, the calculation unit
203 instructs the temperature control unit 205 to start the supply
of the power to the heater 6c, so that the power is supplied to the
heater 6c from the heater power supply 30 (S105). Then, the
temperature control unit 205 starts the feedback control over the
power supplied to the heater 6c such that the temperature of the
electrostatic chuck 6 reaches the target temperature.
[0119] Subsequently, the processing control unit 206 waits for a
preset time period such that the temperature of the temperature
measurement wafer W' is stabilized (S106). Then, the processing
control unit 206 starts the control over the supply of the high
frequency power or the supply of the processing gas based on the
processing recipe for creating the correction table 2040, so that
plasma of the processing gas is generated within the processing
chamber 1 (S107).
[0120] Afterwards, the processing control unit 206 waits for a
preset time period until the temperature of the temperature
measurement wafer W' is stabilized (S108). Then, the processing
control unit 206 stops the supply of the high frequency power and
the supply of the processing gas (S109). Then, the calculation unit
203 instructs the heat transfer gas control unit 201 to stop the
supply of the heat transfer gas and instructs the temperature
control unit 205 to stop the supply of the power to the heaters 6c
or to maintain the power supplied to the heaters 6c to be constant
(S110). Then, the calculation unit 203 stops the acquisition of the
temperature information of the electrostatic chuck 6 in each
division region 60 (S111).
[0121] Thereafter, the calculation unit 203 determines whether the
temperature measurement of the temperature measurement wafer W' and
the electrostatic chuck 6 has been performed for all the pressures
as the measurement targets (in the present exemplary embodiment, 5
Torr, 10 Torr and 20 Torr) (S112). If there is a pressure for which
the temperature measurement of the temperature measurement wafer W'
and the electrostatic chuck 6 is not performed (S112: No), the
calculation unit 203 waits for a preset time period until the
electrostatic chuck 6 is cooled to have a preset temperature by the
chiller unit 33 and the temperature of the temperature measurement
wafer W' is returned back to the room temperature (S113). Then, the
calculation unit 203 performs the process S101 again.
[0122] Meanwhile, if it is determined that the temperature
measurement of the temperature measurement wafer W' and the
electrostatic chuck 6 has been performed for all the pressures
(S112: Yes), the calculation unit 203 calculates the gradient of
the temperature variation of the electrostatic chuck 6 in a period
between the time t.sub.11 upon the lapse of the first time from the
a time t.sub.1 when the supply of the heat transfer gas is begun
and the time t.sub.12 upon the lapse of the second time .DELTA.t
from the time t.sub.11 with respect to each pressure of the heat
transfer gas for each division region 60 (S114), as explained above
with reference to FIG. 8A to FIG. 8C.
[0123] Then, with respect to each division region 60, the
calculation unit 203 calculates the correction value T.sub.off with
respect to the reference temperature based on the aforementioned
expression (1) for each pressure of the heat transfer gas (S115).
Then, with respect to each division region 60, the calculation unit
203 creates the individual table 2041 (see FIG. 6) in which the
gradient of the temperature variation of the electrostatic chuck 6
corresponds to the correction value T.sub.off for each pressure of
the heat transfer gas, and stores the correction table 2040
including the created individual table 2041 in the storage unit 204
(S116).
[0124] <Process Flow for Processing Semiconductor Wafer
W>
[0125] FIG. 12 is a flowchart illustrating an example of a process
of processing a semiconductor wafer W according to the first
exemplary embodiment. Prior to performing the process of FIG. 12,
the heater power supply 30 stops or maintains the supply of the
power to the heater 6c, and the electrostatic chuck 6 is cooled to
have a preset temperature by a coolant which is circulated within
the base 2a. Further, the semiconductor wafer W has a room
temperature.
[0126] First, the calculation unit 203 instructs the
non-illustrated transfer robot to carry the semiconductor wafer W
into the processing chamber 1 and mount the semiconductor wafer W
on the electrostatic chuck 6 (S200). Then, the calculation unit 203
starts acquisition of temperature information of the electrostatic
chuck 6 in each division region 60 from the acquisition unit 202
(S201).
[0127] Then, the calculation unit 203 instructs the heat transfer
gas control unit 201 to start the supply of the heat transfer gas
of a preset pressure into the gap between the semiconductor wafer W
and the electrostatic chuck 6 in each division region 60 according
to a processing recipe in which the processing upon the
semiconductor wafer W is defined. Accordingly, the supply of the
heat transfer gas into the gap between the semiconductor wafer W
and the electrostatic chuck 6 is begun in each division region 60
(S202). Thus, the heat exchange between the semiconductor wafer W
and the electrostatic chuck 6 through the heat transfer gas is
begun.
[0128] Subsequently, the calculation unit 203 waits until a preset
time (e.g., about 10 seconds) elapses from the beginning of the
supply of the heat transfer gas (S203). Then, the calculation unit
203 calculates, for each division region 60, a gradient of the
temperature variation of the electrostatic chuck 6 in a period
between the time t.sub.11 upon the lapse of the first time from the
time t.sub.1 when the supply of the heat transfer gas is begun and
the time t.sub.12 upon the lapse of the second time .DELTA.t from
the time t.sub.11, and the calculation unit 203 acquires, for each
division region 60, the correction value corresponding to the
calculated gradient from the correction table 2040 within the
storage unit 204 (S204). Then, the calculation unit 203 instructs
the temperature control unit 205 to start the supply of the power
to the heaters 6c, and outputs the acquired correction value for
each division region 60 to the temperature control unit 205.
[0129] The temperature control unit 205 corrects, for each division
region 60, the target temperature instructed from the processing
control unit 206 by adding the correction value output from the
calculation unit 203 to the target temperature (S205). Then, the
temperature control unit 205 starts the supply of the power to the
heater 6c and feedback-controls, for each division region 60, the
power supplied to the heaters 6c such that the temperature of the
electrostatic chuck 6 reaches the corrected target temperature
(S206).
[0130] Thereafter, the processing control unit 206 waits for a
preset time period until the temperature of the semiconductor wafer
W is stabilized (S207). Then, the processing control unit 206
performs a plasma process by starting the control over the supply
of the high frequency power and the supply of the processing gas
according to the processing recipe in which the processing upon the
semiconductor wafer W is defined (S208). Upon the completion of the
plasma process, the processing control unit 206 stops the supply of
the high frequency power and the supply of the processing gas
(S209). Then, the calculation unit 203 instructs the heat transfer
gas control unit 201 to stop the supply of the heat transfer gas,
and instructs the temperature control unit 205 to stop the supply
of the power to the heaters 6c or to maintain the power supplied to
the heaters 6c to be constant (S210). Then, the calculation unit
203 stops the acquisition of the temperature information of the
electrostatic chuck 6 for each division region 60 (S211).
Thereafter, the calculation unit 203 instructs the non-illustrated
transfer robot to carry the semiconductor wafer W out of the
processing chamber 1 (S212).
[0131] As stated above, the first exemplary embodiment has been
described. As clearly seen from the above description, in the
processing system 10 according to the first exemplary embodiment,
the non-uniformity in the temperature during the plasma process can
be suppressed between multiple semiconductor wafers W even in case
that the thermal resistance between the semiconductor wafers W and
the electrostatic chuck 6 is changed in the course of processing
the multiple semiconductor wafers W.
Second Exemplary Embodiment
[0132] In the first exemplary embodiment described above, the
target temperature of the electrostatic chuck 6 is corrected for
each division region 60 based on the thermal resistance between the
semiconductor wafer W and the electrostatic chuck 6 in each
division region 60. Meanwhile, according to a second exemplary
embodiment, the temperature variation of the semiconductor wafer W
caused by the change of the thermal resistance between the
semiconductor wafer W and the electrostatic chuck 6 is suppressed
by controlling the pressure of the heat transfer gas supplied into
the gap between the semiconductor wafer W and the electrostatic
chuck 6 in each division region 60 based on the thermal resistance
between the semiconductor wafer W and the electrostatic chuck 6.
The second exemplary embodiment especially has an advantage when it
is applied to a processing system 10 in which the target
temperature of the electrostatic chuck 6 is maintained to be
constant or a processing system 10 in which the heater 6c is not
provided within the electrostatic chuck 6. Further, since a
processing system 10, a processing apparatus 100 and a control
apparatus 200 are the same as the processing system 10, the
processing apparatus 100 and the control apparatus 200 of the first
exemplary embodiment described above with reference to FIG. 1 to
FIG. 5 except the following, redundant description thereof will be
omitted.
[0133] In the present exemplary embodiment, the storage unit 204
stores a correction table 2043 as illustrated in FIG. 13, for
example. FIG. 13 is a diagram illustrating an example of the
correction table 2043 according to the second exemplary embodiment.
A relational expression and a target value of the gradient for each
of division regions (center region and edge region) are stored in
the correction table 2043, as depicted in FIG. 13, for example.
Here, the relational expression refers to an approximate expression
indicating a variation tendency of the gradient of the temperature
variation of the electrostatic chuck 6 when the pressure of the
heat transfer gas is changed. The target value of the gradient
refers to a target gradient in the temperature variation of the
electrostatic chuck 6. The target gradient may be, for example, a
gradient which is obtained when determining a processing condition
of a process. Further, in the relational expression shown in FIG.
13, x denotes the pressure of the heat transfer gas, and y
represents the gradient of the temperature variation of the
electrostatic chuck 6.
[0134] <Process Flow for Creating Correction Table 2043>
[0135] FIG. 14 is a flowchart illustrating an example of a process
of creating the correction table 2043 according to the second
exemplary embodiment. Except the following, this process is the
same as the process of creating the correction table 2040 described
in FIG. 11, and, thus, same reference numerals will be assigned and
redundant description will be omitted.
[0136] First, the control apparatus 200 performs the process S100
to the process S114 which are described in FIG. 11. With respect to
each division region 60, the calculation unit 203 calculates the
relational expression indicating the relation between the pressure
of the heat transfer gas and the gradient of the temperature
variation of the electrostatic chuck 6 for each pressure of the
heat transfer gas (S120). By way of example, it is assumed that
values marked by multiple dots 86 are calculated as the gradient of
the temperature variation of the electrostatic chuck 6 for each
pressure of the heat transfer gas, as illustrated in FIG. 15. In
FIG. 15, a horizontal axis indicates the pressure of the heat
transfer gas, and a vertical axis represents the gradient of the
temperature variation of the electrostatic chuck 6.
[0137] The calculation unit 203 calculates a straight line 85
indicating a distribution tendency of the multiple dots 86 as the
relational expression based on the distribution of the multiple
dots 86. In the present exemplary embodiment, `y=0.0121x+0.185` is
calculated as the relational expression for the center region and
`y=0.0141x+0.155` is calculated as a relational expression for the
edge region, as sown in FIG. 13, for example. Further, in the
present exemplary embodiment, the relational expression is
represented by the straight line. However, the relational
expression may be represented by a curved line as long as it shows
the distribution tendency of the multiple dots 86.
[0138] Subsequently, the calculation unit 203 determines the target
value of the gradient of the temperature variation of the
electrostatic chuck 6 (S121). For example, a reference gradient of
the temperature variation of the electrostatic chuck 6 when the
temperature of the semiconductor wafer W during the plasma process
reaches a preset reference temperature is used as the target value
of the gradient of the temperature variation of the electrostatic
chuck 6. Further, the gradient of the temperature variation of the
electrostatic chuck 6 is related to the thermal resistance between
the semiconductor wafer W and the electrostatic chuck 6.
Determining the target value of the gradient of the temperature
variation of the electrostatic chuck 6 corresponds to determining a
target value of the thermal resistance between the semiconductor
wafer W and the electrostatic chuck 6. The thermal resistance
between the semiconductor wafer W and the electrostatic chuck 6 can
be controlled to some extent by adjusting the pressure of the heat
transfer gas. Thus, it is desirable that the target value of the
gradient of the temperature variation of the electrostatic chuck 6
is set to a value near the approximate middle of a range of the
thermal resistance which can be controlled by using the pressure of
the heat transfer gas. In the present exemplary embodiment, a value
of, e.g., 0.3 is determined as the target value of the gradient of
the temperature variation of the electrostatic chuck 6 for the
center region and the edge region, as illustrated in FIG. 13.
[0139] The calculation unit 203 creates the correction table 2043
including the relational expression and the target value of the
gradient of the temperature variation of the electrostatic chuck 6
which are calculated for each division region 60, and stores the
created correction table 2043 in the storage unit 204 (S122).
[0140] <Process Flow for Processing Semiconductor Wafer
W>
[0141] FIG. 16 is a flowchart illustrating an example of a process
of processing a semiconductor wafer W according to the second
exemplary embodiment. Except the following, this process is the
same as the process of the semiconductor wafer W described in FIG.
12, and, thus, same reference numerals will be assigned and
redundant description will be omitted.
[0142] First, the control apparatus 200 performs the process S200
to the process S203 which are described in FIG. 12. The calculation
unit 203 calculates, for each division region 60, the gradient of
the temperature variation of the electrostatic chuck 6 in a period
between the time t.sub.11 upon the lapse of the first time from the
time t.sub.1 when the supply of the heat transfer gas is begun and
the time t.sub.12 upon the lapse of the second time from the time
t.sub.11 (S220). Here, as shown in FIG. 15, for example, it is
assumed that a value indicated by a dot 87 is calculated as the
gradient of the temperature variation of the electrostatic chuck 6
in a certain division region 60.
[0143] Subsequently, the calculation unit 203 acquires the
relational expression for each division region 60 from the
correction table 2043. Then, for each division region 60, the
calculation unit 203 translates the straight line indicated by the
relational expression acquired from the correction table 2043 in
parallel such that the straight line passes a point of the gradient
value of the temperature variation calculated in the process S220
(S221). That is, as described in FIG. 15, for example, by
translating the straight line 85 in parallel such that the straight
line 85, which indicates the relational expression acquired from
the correction table 2043, passes the dot 87 indicating the
gradient value of the temperature variation obtained in the process
S220, the calculation unit 203 acquires a straight line 88.
[0144] Thereafter, for each division region 60, the calculation
unit 203 calculates, from the parallel-translated straight line,
the pressure of the heat transfer gas which allows the gradient of
the temperature variation of the electrostatic chuck 6 to become
the target value (S222). By way of example, from the
parallel-translated straight line 88, the calculation unit 203
calculates the pressure P of the heat transfer gas at which the
gradient of the temperature variation of the electrostatic chuck 6
becomes the target value of 0.3, as illustrated in FIG. 15, for
example. Then, the calculation unit 203 outputs the calculated
pressure P for each division region 60 to the heat transfer gas
control unit 201. The heat transfer gas control unit 201 then
changes the pressure of the heat transfer gas in each division
region such that the pressure of the heat transfer gas in each
division region 60 becomes the pressure P calculated from the
calculation unit 203. (S223). Then, the control apparatus 200
performs the process S205 to the process S212 which are described
in FIG. 12.
[0145] In the above, the second exemplary embodiment has been
described. As clearly seen from the above description, in the
processing system 10 according to the second exemplary embodiment,
the non-uniformity in the temperature during the plasma process can
be suppressed between multiple semiconductor wafers W even in case
that the thermal resistance between the semiconductor wafers W and
the electrostatic chuck 6 is changed in the course of processing
the multiple semiconductor wafers W. Further, even in the
processing system 10 in which the target temperature of the
electrostatic chuck 6 is the fixed value or the processing system
10 in which the heater 6c is not provided within the electrostatic
chuck 6, it is possible to suppress the temperature variation
between the semiconductor wafers W due to the variation of the
thermal resistance between the semiconductor wafer W and the
electrostatic chuck 6.
[0146] <Hardware of Control Apparatus 200>
[0147] The control apparatus 200 according to the above-described
exemplary embodiments may be implemented by a computer 90 as
illustrated in FIG. 17, for example. FIG. 17 is a diagram showing
an example of the computer 90 configured to perform the operations
of the control apparatus 200. The computer 90 includes a CPU
(Central Processing Unit) 91, a RAM (Random Access Memory) 92, a
ROM (Read Only Memory) 93, an auxiliary memory device 94, a
wireless communication device 95, a communication interface (I/F)
96, an input/output interface (I/F) 97 and a media interface (I/F)
98.
[0148] The CPU 91 is operated based on a program stored in the ROM
93 or the auxiliary memory device 94 and is configured to control
the individual components of the apparatus. The ROM 93 is
configured to store therein a boot program executed by the CPU 91
at the time of starting the computer 90, a program dependent on the
hardware of the computer 90, and so forth.
[0149] The auxiliary memory device 94 is implemented by, for
example, a HDD (Hard Disk Drive), a SSD (Solid State Drive), or the
like, and is configured to store therein a program executed by the
CPU 91, data used by this corresponding program, and so forth. The
CPU 91 is configured to read the corresponding program from the
auxiliary memory device 94, load the program onto the RAM 92 and
execute the loaded program.
[0150] The wireless communication device 95 is configured to
communicate with a temperature measurement wafer W' through
wireless communications, receive data transmitted from the
temperature measurement wafer W' and send the received data to the
CPU 91. The communication I/F 96 is configured to communicate with
the processing apparatus 100 through a communication line such as a
LAN (Local Area Network). Specifically, the communication I/F 96 is
configured to receive data from the processing apparatus 100, send
the received data to the CPU 91 and output data generated by the
CPU 91 to the processing apparatus 100 through the communication
line.
[0151] The CPU 91 is also configured to control an input device
such as a keyboard and an output device such as a display through
the input/output I/F 97. Specifically, the CPU 91 is configured to
acquire a signal input from the input device and send the acquired
signal to the CPU 91 through the input/output I/F 97. Further, the
CPU 91 is further configured to output the data generated by the
CPU 91 to the output device through the input/output I/F 97.
[0152] The media I/F 98 is configured to read a program or data
stored in a recording medium 99 and store the program or the data
in the auxiliary memory device 94. The recording medium 99 may be
implemented by, for example, but not limitation, an optical
recording medium such as a DVD (Digital Versatile Disc) or a PD
(Phase change rewritable Disk), a magneto-optical recording medium
such as a MO (Magneto-Optical disk), a tape medium, a magnetic
recording medium, a semiconductor memory, or the like.
[0153] The CPU 91 of the computer 90 performs the operations of the
heat transfer gas control unit 201, the acquisition unit 202, the
calculation unit 203, the temperature control unit 205 and the
processing control unit 206 by executing the program loaded on the
RAM 92. Further, the data in the storage unit 204 is also stored in
the auxiliary memory device 94.
[0154] The CPU 91 of the computer 90 is configured to read the
program, which is loaded onto the RAM 92, from the recording medium
99 and store the program in the auxiliary memory device 94. As
another example, the program may be acquired from another apparatus
through a communication line and stored in the auxiliary memory
device 94.
[0155] The above-described exemplary embodiments are not limiting,
and various changes and modifications may be made without departing
from the scope of the subject matter described herein.
[0156] By way of example, the calculation unit 203 may calculate
the gradient of the temperature variation of the electrostatic
chuck 6 in a period specified below as the gradient of the
temperature variation of the electrostatic chuck 6 due to the
thermal resistance between the semiconductor wafer W or the
temperature measurement wafer W' and the electrostatic chuck 6.
FIG. 18 is a diagram illustrating an example of the period in which
the gradient of the temperature variation of the electrostatic
chuck 6 is calculated.
[0157] As depicted in FIG. 18, for example, the temperature of the
electrostatic chuck 6 is controlled to a preset temperature
T.sub.min set by the chiller unit 33 until the time t.sub.1 when
the supply of the heat transfer gas is begun. At the time t.sub.1
when the supply of the heat transfer gas is begun, the temperature
of the electrostatic chuck 6 increases due to the heat exchange
between the semiconductor wafer W or the temperature measurement
wafer W' and the electrostatic chuck 6. If the power is not
supplied to the heaters 6c, the temperature of the electrostatic
chuck 6 is decreased after reaching a peak of a preset temperature
T.sub.max, and then, returned back to the temperature T.sub.min
which is controlled by the chiller unit 33.
[0158] Here, in the temperature variation of the electrostatic
chuck 6, for a period during which the gradient of the temperature
variation is larger, the gradient of the temperature variation is
more likely to be differed when the thermal resistance between the
electrostatic chuck 6 and the semiconductor wafer W or the
temperature measurement wafer W' is changed. On this account, it is
desirable to set the time t.sub.11 as a starting time of the period
during which the gradient of the temperature variation increases
and the time t.sub.12 as an ending time between the time t.sub.1
and the time t.sub.a when the temperature of the electrostatic
chuck 6 is maximum, as shown in FIG. 18. By way of example, if the
temperature T.sub.min is set to be 0% and the temperature T.sub.max
is set to be 100%, the time t.sub.11 may be, for example, a time
when a temperature T.sub.1 of the electrostatic chuck 6 is in the
range from 10% to 30%, and the time t.sub.12 may be, for example, a
time when a temperature T.sub.2 of the electrostatic chuck 6 is in
the range from 70% to 90%.
[0159] Further, in the above-described exemplary embodiments, the
gradient of the temperature variation of the electrostatic chuck 6
is calculated in the state that the temperature of the
semiconductor wafer W or the temperature of the temperature
measurement wafer W' is higher than the temperature of the
electrostatic chuck 6. However, the exemplary embodiments are not
limited thereto. For example, the gradient of the temperature
variation of the electrostatic chuck 6 may be calculated in the
state that the temperature of the semiconductor wafer W or the
temperature of the temperature measurement wafer W' is lower than
the temperature of the electrostatic chuck 6. In such a case, the
temperature of the electrostatic chuck 6 decreases with the lapse
of time. Further, in this case as well, the magnitude of the
gradient of the temperature variation of the electrostatic chuck 6
is varied depending on the thermal resistance between the
electrostatic chuck 6 and the semiconductor wafer W or the
temperature measurement wafer W'.
[0160] Furthermore, in the above-described first exemplary
embodiment, the target temperature is corrected based on the
temperature variation of the electrostatic chuck 6 when processing
each semiconductor wafer W. As another example, however, the
process of correcting the target temperature based on the
temperature variation of the electrostatic chuck 6 may be performed
a single time for every preset number of semiconductor wafers W,
and the semiconductor wafers W may be processed by using the
corrected target temperature until a next process of correcting the
target temperature is performed. In addition, in the
above-described second exemplary embodiment, when processing each
semiconductor wafer W, the pressure of the heat transfer gas is
changed based on the temperature variation of the electrostatic
chuck 6. As another example, however, the process of changing the
pressure of the heat transfer gas based on the temperature
variation of the electrostatic chuck 6 may be performed a single
time for every preset number of semiconductor wafers W, and the
semiconductor wafers W may be processed by using the changed
pressure of the heat transfer gas until a next process of changing
the pressure of the heat transfer gas is performed. Through these,
when processing multiple semiconductor wafers W, the throughput can
be improved.
[0161] Moreover, in the above-described exemplary embodiments, the
top surface of the electrostatic chuck 6 is divided into the two
concentric division regions 60, and the power of the heater 6c and
the pressure of the heat transfer gas can be controlled for each
division region 60 independently. However, the number of the
division regions 60 may not be limited to two, but three or more
division regions are available. Further, the division regions 60
may be formed in a lattice shape or in a radial shape without being
limited to the concentric shape.
[0162] From the foregoing, it will be appreciated that various
embodiments of the present disclosure have been described herein
for purposes of illustration, and that various modifications may be
made without departing from the scope and spirit of the present
disclosure. Accordingly, the various embodiments disclosed herein
are not intended to be limiting.
[0163] The claims of the present application are different and
possibly, at least in some aspects, broader in scope than the
claims pursued in the parent application. To the extent any prior
amendments or characterizations of the scope of any claim or cited
document made during prosecution of the parent could be construed
as a disclaimer of any subject matter supported by the present
disclosure, Applicants hereby rescind and retract such disclaimer.
Accordingly, the references previously presented in the parent
applications may need to be revisited.
* * * * *