U.S. patent application number 16/803883 was filed with the patent office on 2021-03-25 for semiconductor storage device.
The applicant listed for this patent is KIOXIA CORPORATION. Invention is credited to Takayuki MIYAZAKI, Masumi SAITOH, Reika TANAKA.
Application Number | 20210089240 16/803883 |
Document ID | / |
Family ID | 1000005444591 |
Filed Date | 2021-03-25 |
United States Patent
Application |
20210089240 |
Kind Code |
A1 |
TANAKA; Reika ; et
al. |
March 25, 2021 |
SEMICONDUCTOR STORAGE DEVICE
Abstract
A storage device includes a substrate, first wirings arranged in
a first direction and extending in a second direction, second
wirings arranged in the second direction and extending in the first
direction, resistance portions between the first and second
wirings, third wirings between the second wirings and the
substrate, arranged in the second direction and extending in a
third direction, semiconductor portions each connected to second
and third wirings, a fourth wiring extending in the second
direction and facing the semiconductor portions, insulating
portions between the semiconductor portions and the fourth wiring,
and a contact connected to each first wiring. The semiconductor
portions include a first portion and a second portion closer to the
contact, and a length in the second direction of an insulating
portion between the first portion and the fourth wiring is greater
than that of another insulating portion between the second portion
and the fourth wiring.
Inventors: |
TANAKA; Reika; (Yokohama
Kanagawa, JP) ; MIYAZAKI; Takayuki; (Setagaya Tokyo,
JP) ; SAITOH; Masumi; (Yokohama Kanagawa,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
KIOXIA CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
1000005444591 |
Appl. No.: |
16/803883 |
Filed: |
February 27, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 2213/71 20130101;
G06F 3/0688 20130101 |
International
Class: |
G06F 3/06 20060101
G06F003/06 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 19, 2019 |
JP |
2019-170560 |
Claims
1. A semiconductor storage device comprising: a substrate; a
plurality of first wirings arranged above the substrate in a first
direction intersecting a surface of the substrate and extending in
a second direction intersecting the first direction; a plurality of
second wirings arranged above the substrate in the second direction
and extending in the first direction; a plurality of first variable
resistance portions arranged between the plurality of first wirings
and the plurality of second wirings; a plurality of third wirings
provided between the plurality of second wirings and the substrate,
arranged in the second direction, and extending in a third
direction intersecting the first and second directions; a plurality
of semiconductor portions each electrically connected to one end of
one of the plurality of second wirings in the first direction and
one of the plurality of third wirings; a fourth wiring extending in
the second direction and facing the plurality of semiconductor
portions in the third direction; a plurality of first insulating
portions each provided between one of the plurality of
semiconductor portions and the fourth wiring; and a first contact
electrically connected to an end of each of the plurality of first
wirings in the second direction, wherein the plurality of
semiconductor portions include a first semiconductor portion and a
second semiconductor portion closer to the first contact than the
first semiconductor portion, and a length in the second direction
of one of the first insulating portions between the first
semiconductor portion and the fourth wiring is greater than a
length in the second direction of another one of the first
insulating portions between the second semiconductor portion and
the fourth wiring.
2. The semiconductor storage device according to claim 1, wherein
an area of a surface of the first semiconductor portion that faces
said one of the first insulating portions is larger than an area of
a surface of the second semiconductor portion that faces said
another one of the first insulating portions.
3. The semiconductor storage device according to claim 1, further
comprising: a plurality of fifth wirings arranged in the first
direction and extending in the second direction; a plurality of
second variable resistance portions between the plurality of fifth
wirings and the plurality of second wirings; and a second contact
electrically connected to an end of each of the plurality of fifth
wirings in the second direction and arranged opposite to the first
contact.
4. The semiconductor storage device according to claim 3, further
comprising: a sixth wiring extending in the second direction and
facing the plurality of semiconductor portions in the third
direction; a plurality of second insulating portions each provided
between one of the plurality of semiconductor portions and the
sixth wiring; and a voltage supply circuit capable of supplying
different voltages to the fourth and sixth wirings.
5. The semiconductor storage device according to claim 3, further
comprising: a plurality of seventh wirings arranged in the second
direction above the plurality of second wirings and extending in
the third direction, a plurality of other semiconductor portions
each electrically connected to the other end of one of the
plurality of second wirings in the first direction and one of the
plurality of seventh wirings; an eighth wiring extending in the
second direction and facing said other semiconductor portions in
the third direction; and a plurality of third insulating portions
each provided between one of said other semiconductor portions and
the eighth wiring.
6. The semiconductor storage device according to claim 1, wherein
the plurality of first insulating portions are connected to each
other.
7. The semiconductor storage device according to claim 1, wherein
the plurality of semiconductor portions comprise first and second
groups of semiconductor portions arranged in the second direction,
the second group of semiconductor portions are closer to the first
contact than the first group of semiconductor portions, and a
length in the second direction of one of the first insulating
portions between each of the first group of semiconductor portions
and the fourth wiring is greater than a length in the second
direction of another one of the first insulating portions between
each of the second group of semiconductor portions and the fourth
wiring.
8. A semiconductor storage device comprising: a substrate; a
plurality of first wirings arranged above the substrate in a first
direction intersecting a surface of the substrate and extending in
a second direction intersecting the first direction; a plurality of
second wirings arranged above the substrate in the second direction
and extending in the first direction; a plurality of first variable
resistance portions arranged between the plurality of first wirings
and the plurality of second wirings; a plurality of third wirings
provided between the plurality of second wirings and the substrate,
arranged in the second direction, and extending in a third
direction intersecting the first and second directions; a plurality
of semiconductor portions each electrically connected to one end of
one of the plurality of second wirings in the first direction and
one of the plurality of third wirings; a fourth wiring extending in
the second direction and facing the plurality of semiconductor
portions in the third direction; a plurality of first insulating
portions each provided between one of the plurality of
semiconductor portions and the fourth wiring; and a first contact
electrically connected to an end of each of the plurality of first
wirings in the second direction, wherein the plurality of
semiconductor portions include a first semiconductor portion and a
second semiconductor portion closer to the first contact than the
first semiconductor portion, and a length of the first
semiconductor portion in the third direction is smaller than a
length of the second semiconductor portion in the third
direction.
9. The semiconductor storage device according to claim 8, further
comprising: a plurality of fifth wirings arranged in the first
direction and extending in the second direction; a plurality of
second variable resistance portions between the plurality of fifth
wirings and the plurality of second wirings; and a second contact
electrically connected to an end of each of the plurality of fifth
wirings in the second direction and arranged opposite to the first
contact.
10. The semiconductor storage device according to claim 9, further
comprising: a sixth wiring extending in the second direction and
facing the plurality of semiconductor portions in the third
direction; a plurality of second insulating portions each provided
between one of the plurality of semiconductor portions and the
sixth wiring; and a voltage supply circuit capable of supplying
different voltages to the fourth and sixth wirings.
11. The semiconductor storage device according to claim 9, further
comprising: a plurality of seventh wirings arranged in the second
direction above the plurality of second wirings and extending in
the third direction; a plurality of other semiconductor portions
each electrically connected to the other end of one of the
plurality of second wirings in the first direction and one of the
plurality of seventh wirings; an eighth wiring extending in the
second direction and facing said other semiconductor portions in
the third direction; and a plurality of third insulating portions
each provided between one of said other semiconductor portions and
the eighth wiring.
12. The semiconductor storage device according to claim 8, wherein
the plurality of first insulating portions are connected to each
other.
13. The semiconductor storage device according to claim 8, wherein
a width in the third direction of the fourth wiring facing the
first semiconductor portion is wider than a width in the third
direction of the fourth wiring facing the second semiconductor
portion.
14. A semiconductor storage device comprising: a substrate; a
plurality of first wirings arranged above the substrate in a first
direction intersecting a surface of the substrate and extending in
a second direction intersecting the first direction; a plurality of
second wirings arranged above the substrate in the second direction
and extending in the first direction; a plurality of first variable
resistance portions arranged between the plurality of first wirings
and the plurality of second wirings; a plurality of third wirings
provided between the plurality of second wirings and the substrate,
arranged in the second direction, and extending in a third
direction intersecting the first and second directions; a plurality
of semiconductor portions each electrically connected to one end of
one of the plurality of second wirings in the first direction and
one of the plurality of third wirings; a fourth wiring extending in
the second direction and facing the plurality of semiconductor
portions in the third direction; and a plurality of first
insulating portions each provided between one of the plurality of
semiconductor portions and the fourth wiring, wherein the first
insulating portions contain oxygen (O) and hafnium (Hf) and include
a tetragonal crystal as a crystal structure.
15. The semiconductor storage device according to claim 14, further
comprising: a first contact electrically connected one end of each
of the plurality of first wirings in the second direction, wherein
the plurality of semiconductor portions include a first
semiconductor portion and a second semiconductor portion closer to
the first contact than the first semiconductor portion, and one of
the first insulating portions facing the first semiconductor
portion is positively polarized, and another one of the first
insulating portions facing the second semiconductor portion is
negatively polarized.
16. The semiconductor storage device according to claim 15, wherein
said one of the first insulating portions has a different
polarizability from said another one of the first insulating
portions.
17. The semiconductor storage device according to claim 15, further
comprising: a plurality of fifth wirings arranged in the first
direction and extending in the second direction; a plurality of
second variable resistance portions between the plurality of fifth
wirings and the plurality of second wirings; and a second contact
electrically connected to an end of each of the plurality of fifth
wirings in the second direction and arranged opposite to the first
contact.
18. The semiconductor storage device according to claim 17, further
comprising: a sixth wiring extending in the second direction and
facing the plurality of semiconductor portions in the third
direction; a plurality of second insulating portions each provided
between one of the plurality of semiconductor portions and the
sixth wiring; and a voltage supply circuit capable of supplying
different voltages to the fourth and sixth wirings.
19. The semiconductor storage device according to claim 17, further
comprising: a plurality of seventh wirings arranged in the second
direction above the plurality of second wirings and extending in
the third direction, a plurality of other semiconductor portions
each electrically connected to the other end of one of the
plurality of second wirings in the first direction and one of the
plurality of seventh wirings; an eighth wiring extending in the
second direction and facing said other semiconductor portions in
the third direction; and a plurality of third insulating portions
each provided between one of said other semiconductor portions and
the eighth wiring.
20. The semiconductor storage device according to claim 14, wherein
the plurality of first insulating portions are connected to each
other.
Description
CROSS-REFERENCE TO RELATED APPLICATION(S)
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application No. 2019-170560, filed
Sep. 19, 2019, the entire contents of which are incorporated herein
by reference.
FIELD
[0002] Embodiments described herein relate generally to a
semiconductor storage device.
BACKGROUND
[0003] With the high integration of semiconductor storage devices,
semiconductor storage devices in which memory cells are arranged
three-dimensionally are being developed. Such semiconductor storage
devices use, as a memory cell, a resistive random access memory
(ReRAM) using a variable-resistance element, or a flash memory
using a field effect transistor capable of storing electric charge
in a gate insulating layer.
DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a schematic block diagram showing a partial
configuration of a semiconductor storage device according to a
first embodiment.
[0005] FIG. 2 is a schematic circuit diagram showing a partial
configuration of the semiconductor storage device.
[0006] FIG. 3 is a schematic perspective view showing a partial
configuration of the semiconductor storage device.
[0007] FIGS. 4 and 5 are schematic plan views each showing a
partial configuration of the semiconductor storage device.
[0008] FIG. 6 is a schematic circuit diagram for explaining a read
operation of the semiconductor storage device.
[0009] FIG. 7 is a schematic circuit diagram for explaining a set
operation of the semiconductor storage device.
[0010] FIG. 8 is a schematic circuit diagram for explaining a reset
operation of the semiconductor storage device.
[0011] FIG. 9 is a schematic circuit diagram showing a state of the
reset operation for a memory cell MCn.
[0012] FIG. 10 is a schematic diagram showing a voltage applied to
the memory cell MCn.
[0013] FIG. 11 is a schematic circuit diagram showing a state of
the reset operation for a memory cell MCf.
[0014] FIG. 12 is a schematic diagram showing voltages applied to
the memory cells MCn and MCf.
[0015] FIG. 13 is a schematic diagram showing voltages applied to
the memory cells MCn and MCf in the reset operation of the
semiconductor storage device according to the first embodiment.
[0016] FIGS. 14-22 are schematic plan views each showing a
configuration of a transistor array TA of the same semiconductor
storage device.
[0017] FIG. 23 is a schematic perspective view showing a partial
configuration of a semiconductor storage device according to a
second embodiment.
[0018] FIGS. 24 and 25 are schematic plan views each showing a
partial configuration of the semiconductor storage device.
[0019] FIGS. 26-29 are schematic plan views each showing a
configuration example of a transistor array TA' of the
semiconductor storage device.
[0020] FIG. 30 is a schematic perspective view showing a partial
configuration of a semiconductor storage device according to a
third embodiment.
[0021] FIG. 31 is a schematic plan view showing a configuration of
a transistor array TAU of the semiconductor storage device.
DETAILED DESCRIPTION
[0022] Embodiments provide a semiconductor storage device that can
be suitably controlled.
[0023] In general, according to one embodiment, a semiconductor
storage device includes a substrate, a plurality of first wirings
arranged above the substrate in a first direction intersecting a
surface of the substrate and extending in a second direction
intersecting the first direction, a plurality of second wirings
arranged above the substrate in the second direction and extending
in the first direction, a plurality of first variable resistance
portions arranged between the plurality of first wirings and the
plurality of second wirings, a plurality of third wirings provided
between the plurality of second wirings and the substrate, arranged
in the second direction, and extending in a third direction
intersecting the first and second directions, a plurality of
semiconductor portions each electrically connected to one end of
one of the plurality of second wirings in the first direction and
one of the plurality of third wirings, a fourth wiring extending in
the second direction and facing the plurality of semiconductor
portions in the third direction, a plurality of first insulating
portions each provided between one of the plurality of
semiconductor portions and the fourth wiring, and a first contact
electrically connected to an end of each of the plurality of first
wirings in the second direction. The plurality of semiconductor
portions include a first semiconductor portion and a second
semiconductor portion closer to the first contact than the first
semiconductor portion, and a length in the second direction of one
of the first insulating portions between the first semiconductor
portion and the fourth wiring is greater than a length in the
second direction of another one of the first insulating portions
between the second semiconductor portion and the fourth wiring.
[0024] Next, a semiconductor storage device according to an
embodiment will be described in detail with reference to drawings.
The following drawings are schematic and specific configurations
can be adjusted as appropriate. In the following drawings, some
components may be omitted for the sake of description. The
following embodiments are merely examples and are not intended to
limit the present disclosure. In the following description, the
description of the same parts in a plurality of embodiments is
basically omitted.
[0025] In this specification, a predetermined direction parallel to
the surface of a substrate is called an X direction, a direction
parallel to the surface of the substrate and perpendicular to the X
direction is called a Y direction, and a direction perpendicular to
the surface of the substrate is called a Z direction.
[0026] In the present specification, a direction along the
predetermined surface may be referred to as a first direction, a
direction intersecting the first direction along the predetermined
surface may be referred to as a second direction, and a direction
intersecting the predetermined surface may be referred to as a
third direction. The first direction, the second direction, and the
third direction may or may not correspond to any of the X
direction, the Y direction, and the Z direction.
[0027] In this specification, expressions such as "upper" and
"lower" are based on the substrate. For example, the direction away
from the substrate along the Z direction is referred to as up, and
the direction approaching the substrate along the Z direction is
referred to as down. When referring to the lower surface or lower
end of a certain configuration, it means the surface or end portion
on the substrate side of this configuration, and when referring to
the upper surface or upper end, it means the surface or end portion
opposite to the substrate of this configuration. A surface
intersecting the X direction or the Y direction is called a side
surface.
[0028] In this specification, when it is referred that a first
configuration is "electrically connected" to a second
configuration, the first configuration may be directly connected to
the second configuration, or the first configuration may be
connected to the second configuration via a wiring, a semiconductor
member, a transistor, or the like. For example, when three
transistors are connected in series, a first transistor is
"electrically connected" to a third transistor even if a second
transistor is in an OFF state.
[0029] In this specification, when it is referred that the first
configuration is "connected" between the second configuration and
the third configuration, it may mean that the first configuration,
the second configuration, and the third configuration are connected
in series, and the first configuration is provided in a current
path of the second configuration and the third configuration.
[0030] In this specification, when it is referred that a circuit or
the like makes two wirings or the like "conductive", it may mean
that for example, this circuit or the like includes a transistor or
the like, and the transistor or the like is provided in a current
path between two wirings, and the transistor or the like is turned
on.
First Embodiment
[Overall Structure]
[0031] FIG. 1 is a block view showing a configuration of the
semiconductor storage device according to a first embodiment. FIG.
2 is a circuit diagram showing a partial configuration of the
semiconductor storage device.
[0032] As shown in FIG. 1, the semiconductor storage device
includes a memory cell array MCA, a transistor array TA, a row
decoder RD, a column decoder CD, an upper block decoder UB, a power
supply VG, and a control circuit SQC.
[0033] As shown in FIG. 2, the memory cell array MCA includes a
plurality of word lines WL, a plurality of local bit lines LBL, and
a plurality of memory cells MC connected between the plurality of
word lines WL and the plurality of local bit lines LBL. Each of the
plurality of memory cells MC includes a variable-resistance
element.
[0034] The transistor array TA includes a global bit line GBL, a
plurality of selected transistors STr connected between the global
bit line GBL and the plurality of local bit lines LBL, and a
plurality of selected gate lines SG connected to the gate
electrodes of the plurality of selected transistors STr.
[0035] The row decoder RD shown in FIG. 1 includes, for example, a
word line decoding circuit and a selected gate line decoding
circuit. The word line decoding circuit makes the word line WL
specified by a row address RA conductive with a selected word line
voltage supply line and makes the other word lines WL conductive
with the non-selected word line voltage supply line. For example,
the word line decoding circuit includes a plurality of AND circuits
and a plurality of voltage transfer circuits provided corresponding
to the plurality of word lines WL. The plurality of AND circuits
are configured such that, for example, the AND circuit
corresponding to the word line WL specified by the row address RA
outputs "L", and the other AND circuits output "H". The voltage
transfer circuit includes, for example, a voltage transfer
transistor that makes the word lines WL conductive with the
selected word line voltage supply line when "L" is input to the
gate electrode, and a voltage transfer transistor that makes the
word line WL conductive with the non-selected word line voltage
supply line when "H" is input to the gate electrode. The selected
gate line decoding circuit makes the selected gate line SG
specified by the row address RA conductive with an ON voltage
supply line and makes the other selected gate lines SG conductive
with an OFF voltage supply line.
[0036] The column decoder CD shown in FIG. 1 includes, for example,
a bit line decoding circuit. The bit line decoding circuit makes
the global bit line GBL specified by a column address CA conductive
with an output terminal of a column control circuit (not shown) and
makes the other global bit lines GBL lines conductive with the
non-selected bit line voltage supply lines. The column control
circuit (not shown) includes a data buffer circuit, a sense
amplifier circuit, and a selected bit line decoding circuit. The
data buffer circuit latches read data or write data. The sense
amplifier circuit detects the voltage or current applied to or
flowing through the global bit line GBL and causes the data buffer
circuit to latch the voltage or current as read data. The selected
bit line decoding circuit makes the global bit line GBL conductive
with the selected bit line voltage supply line or the non-selected
bit line voltage supply line according to the data latched in the
data buffer circuit.
[0037] The upper block decoder UB sequentially decodes address data
latched in an address register (not shown), outputs the row address
RA to the row decoder RD, and outputs the column address CA to the
column decoder CD.
[0038] The power supply VG includes a plurality of step-down
circuits such as a regulator for stepping down the power supply
voltage. The output terminals of the plurality of step-down
circuits are connected to a selected word line voltage supply line,
a non-selected word line voltage supply line, an ON voltage supply
line, an OFF voltage supply line, a selected bit line voltage
supply line, a non-selected bit line voltage supply line, and other
voltage supply lines. The plurality of step-down circuits adjust
the output voltage according to an internal control signal.
[0039] The control circuit SQC sequentially decodes command data
latched in a command register (not shown) and outputs the decoded
command as an internal control signal to each component in the
semiconductor storage device.
[Memory Cell Array MCA]
[0040] FIG. 3 is a schematic perspective view showing a
configuration of the memory cell array MCA and the transistor array
TA according to the present embodiment. FIG. 4 is a schematic XY
cross-sectional view showing a partial configuration of the memory
cell array MCA. FIG. 5 is a schematic XY cross-sectional view
showing a partial configuration of the transistor array TA.
[0041] As shown in FIG. 3, the memory cell array MCA includes a
plurality of word lines WL arranged in the Y direction and the Z
direction and extending in the X direction, a plurality of local
bit lines LBL arranged in the X direction and the Y direction and
extending in the Z direction, and a plurality of variable
resistance films VR provided between the word lines WL and the
local bit lines LBL.
[0042] The word line WL and the local bit line LBL may include, for
example, a stacked film of titanium nitride (TiN) and tungsten (W)
or may include polycrystalline silicon (p-Si) into which impurities
are implanted, silicide, or the like. An insulating layer (not
shown) such as SiO.sub.2 may be provided between these wirings.
[0043] A portion of the variable resistance film VR provided
between the word line WL and the local bit line LBL functions as a
variable-resistance element in the memory cell MC. Various
configurations may be adopted as the variable resistance film
VR.
[0044] For example, the variable resistance film VR may include a
metal oxide or the like or may be one in which a filament such as
an oxygen defect is formed in a metal oxide. In this case, the
variable resistance film VR may include, for example, a metal oxide
such as hafnium oxide (HfO.sub.x), aluminum oxide (AlO.sub.x),
titanium oxide (AlO.sub.x), or zirconium oxide (ZrO.sub.x), may
include a stacked film thereof, or may include a stacked film such
as silver (Ag) or copper (Cu).
[0045] The variable resistance film VR may include, for example,
chalcogenide or the like, and a part of the variable resistance
film VR may be in a crystalline state or an amorphous state. In
this case, the variable resistance film VR may include, for
example, germanium (Ge), selenium (Se), tellurium (Te), or the like
or may include other materials.
[0046] The variable resistance film VR may include, for example, a
tunnel insulating film that functions as a ferroelectric film.
[0047] The ferroelectric film described in this specification may
include, for example, tetragonal hafnium oxide. The hafnium oxide
contained in the ferroelectric film may be mainly composed of
tetragonal crystals. More specifically, the hafnium oxide contained
in the ferroelectric film may be mainly composed of a third
tetragonal crystal (i.e., orthorhombic III, space group Pbc21,
space group number 29). In the hafnium oxide crystals contained in
the ferroelectric film, the proportion of tetragonal crystals may
be the largest. Tetragonal crystals are also called orthorhombic
crystals.
[0048] The ferroelectric film described in this specification may
include at least one additive element selected from the group
consisting of silicon (Si), zirconium (Zr), aluminum (Al), yttrium
(Y), strontium (Sr), lanthanum (La), samarium (Sm), gadolinium
(Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er),
ytterbium (Yb), lutetium (Lu), and barium (Ba).
[0049] From the viewpoint of developing the ferroelectricity of the
hafnium oxide, the concentration of the additive element is
preferably in the range of 0.1 atom % or more to 60% or less. An
appropriate range of the concentration of the additive element for
developing the ferroelectricity of the hafnium oxide varies
depending on the kind of the additive element. For example, when
the additive element is silicon (Si), an appropriate range of the
concentration of the additive element for developing
ferroelectricity is 3 atom % or more to 7 atom % or less. For
example, when the additive element is barium (Ba), an appropriate
range of the concentration of the additive element for developing
ferroelectricity is 0.1 atom % or more to 3 atom % or less. For
example, when the additive element is zirconium (Zr), an
appropriate range of the concentration of the additive element for
developing ferroelectricity is 10 atom % or more to 60 atom % or
less.
[0050] The word line WL according to the present embodiment is
connected to the row decoder RD on one end side in the X direction
(i.e., the right side in FIG. 4). Accordingly, some local bit lines
LBL are relatively far from the connecting portion between the word
line WL and the row decoder RD. On the other hand, some local bit
lines LBL are relatively close to connecting portion between the
word line WL and the row decoder RD. Hereinafter, when focusing on
the local bit line LBL, the memory cell MC, or the selected
transistor Str, the side where the connecting portion is located
between the word line WL and the row decoder RD in the X direction
(i.e., the right side in FIG. 4) is sometimes referred to as "near
bit side" or the like. The opposite side of the near bit side
(i.e., the left side in FIG. 4) may be referred to as "far bit
side" or the like.
[Transistor Array TA]
[0051] For example, as shown in FIG. 3, the transistor array TA
includes a plurality of global bit lines GBL arranged in the X
direction and extending in the Y direction, a plurality of selected
transistors STr arranged in the X direction and the Y direction,
and a plurality of selected gate lines SG arranged in the Y
direction and extending in the X direction.
[0052] The selected transistors STr are arranged in the X direction
and the Y direction corresponding to the local bit line LBL and are
connected to the local bit line LBL. The selected transistor STr
includes a semiconductor portion S, a gate insulating film GI
provided between the semiconductor portion S and the selected gate
line SG, and a part of the selected gate line SG.
[0053] The semiconductor portion S of the selected transistor STr
includes an n-type semiconductor region s1 connected to the global
bit line GBL, an n-type semiconductor region s3 connected to the
local bit line LBL, and a p-type semiconductor region s2 provided
therebetween. The semiconductor portion S may include, for example,
polycrystalline silicon (Si). In this case, the n-type
semiconductor regions s1 and s3 contain N-type impurities such as
phosphorus (P). The p-type semiconductor region s2 contains a
P-type impurity such as boron (B). The semiconductor portion S may
include an oxide semiconductor such as a metal oxide, for example.
In such a case, the n-type semiconductor regions s1 and s3 may
contain indium (In), gallium (Ga), zinc (Zn), oxygen (O), and the
like. The p-type semiconductor region s2 may contain copper (Cu)
and oxygen (O) or may contain tin (Sn) and oxygen (O).
[0054] The gate insulating film GI of the selected transistor STr
contains, for example, silicon oxide (SiO.sub.2) or hafnium oxide
(HfO.sub.x).
[0055] The selected gate lines SG are arranged in the Y direction
corresponding to the selected transistors STr and extend in the X
direction. The selected gate line SG faces the p-type semiconductor
regions s2 of a plurality of semiconductor portions S arranged in
the X direction. The selected gate line SG functions as a gate
electrode of the selected transistor STr. The shape and the like of
the selected gate line SG may be adjusted as appropriate. For
example, the selected gate line SG may have a plurality of through
holes that face the outer peripheral surfaces of the plurality of
semiconductor portions S. For example, as shown in FIG. 5, the
selected gate line SG may include two members that face one side
surface and the other side surface of the semiconductor portion S
in the Y direction.
[0056] The selected gate line SG and the global bit line GBL may
contain, for example, materials applicable to the word line WL and
the local bit line LBL. An insulating layer (not shown) such as
SiO.sub.2 may be provided between the selected gate line SG and the
global bit line GBL.
[0057] The configuration of the transistor array TA shown in FIGS.
3 and 5 is a schematic view for description and does not show a
specific configuration. A configuration of the transistor array TA
according to the present embodiment will be described later with
reference to FIGS. 14 to 22.
[Operation]
[0058] Next, the operation of the semiconductor storage device
according to the present embodiment will be described with
reference to FIGS. 6 to 8. FIGS. 6 to 8 are schematic circuit
diagrams for explaining the operation of the semiconductor storage
device according to the present embodiment.
[0059] As shown in FIG. 6, in a read operation, a voltage Vread is
supplied to a selected word line sWL. For example, the voltage
Vread is generated by the power supply VG shown in FIG. 1 and
output to the selected word line voltage supply line. The row
decoder shown in FIG. 1 makes the selected word line sWL and the
selected word line voltage supply line conductive. In the read
operation, the voltage 1/2 Vread is supplied to a non-selected word
line uWL, 0V is supplied to a selected global bit line sGBL, and
the voltage 1/2 Vread is supplied to a non-selected bit line uGBL.
The selected gate line SG corresponding to a selected memory cell
sMC is supplied with an ON voltage at which the selected gate line
SG is turned on, and the other selected gate lines SG are supplied
with an OFF voltage at which the selected gate line SG is turned
off. Thereby, when the selected memory cell sMC is in a set state
(i.e., a low resistance state), a current I flows from the selected
word line sWL to the selected global bit line sGBL. When the
selected memory cell sMC is in a reset state (i.e., a high
resistance state), the current I does not flow.
[0060] In the read operation, the sense amplifier circuit detects
the voltage or current applied to or flowing through the selected
global bit line sGBL, causes the data buffer circuit to latch the
detected data as read data, and outputs the read data to the
outside of the semiconductor storage device.
[0061] As shown in FIG. 7, in a set operation, a voltage Vset is
supplied to the selected word line sWL, the voltage 1/2 Vset is
supplied to the non-selected word line uWL, 0V is supplied to the
selected global bit line sGBL, and the voltage 1/2 Vset is supplied
to the non-selected bit line uGBL. The voltage Vset is larger than
the voltage Vread. An ON voltage is supplied to the selected gate
line SG corresponding to the selected memory cell sMC, and an OFF
voltage is supplied to the other selected gate lines SG. As a
result, the state of the selected memory cell sMC is set to the set
state (i.e., the low resistance state).
[0062] As shown in FIG. 8, in a reset operation, 0V is supplied to
the selected word line sWL, a voltage 1/2 Vreset is supplied to the
non-selected word line uWL, a voltage Vreset is supplied to the
selected global bit line sGBL, and the voltage 1/2 Vreset is
supplied to the non-selected bit line uGBL. The voltage Vreset is
larger than the voltage Vset. An ON voltage is supplied to the
selected gate line SG corresponding to the selected memory cell
sMC, and an OFF voltage is supplied to the other selected gate
lines SG. As a result, the state of the selected memory cell sMC is
set to the reset state (i.e., the high resistance state).
[Wiring Resistance of Word Line WL]
[0063] As the semiconductor storage device is highly integrated,
the width of the word line WL (i.e., the length in the Y direction
and the Z direction, see FIGS. 3 and 4) is decreasing. Along with
this, the wiring resistance in the word line WL is increasing, and
the voltage drop in the word line WL in the read operation or the
like is increasing. Therefore, for example, when the memory cell MC
located closest to the near bit side is referred to as the memory
cell MCn, and the memory cell MC located closest to the far bit
side is referred to as the memory cell MCf, the voltage required
for executing the read operation of the memory cell MCn and the
voltage required for executing the read operation of the memory
cell MCf are different.
[0064] For example, as shown in FIGS. 9 and 10, when the reset
operation is executed with the memory cell MCn as the selected
memory cell sMC, a voltage Vresetn is supplied to the selected
global bit line sGBL, and a voltage 0V is supplied to the selected
word line sWL. As a result, the current I flows from the selected
global bit line sGBL to the selected word line sWL, and a voltage
drop occurs due to the wiring resistance of the selected word line
sWL. However, since the distance from the memory cell MCn to the
row decoder RD is sufficiently short, the voltage drop in the
selected word line sWL is sufficiently small. Accordingly, a
voltage V.sub.MCn applied to the memory cell MCn is approximately
equal to the voltage Vresetn.
[0065] On the other hand, for example, as shown in FIGS. 11 and 12,
when the reset operation is executed with the memory cell MCf as
the selected memory cell sMC, a voltage Vresetf is supplied to the
selected global bit line sGBL, and a voltage 0V is supplied to the
selected word line sWL. As a result, the current I flows from the
selected global bit line sGBL to the selected word line sWL, and a
voltage drop nRwI occurs due to the wiring resistance of the
selected word line sWL. Here, since the distance from the memory
cell MCf to the row decoder RD is relatively long, the voltage drop
nRwI in the selected word line sWL becomes relatively large.
Accordingly, a voltage V.sub.MCf applied to the memory cell MCf is
obtained by subtracting the voltage drop nRwI at the selected word
line sWL from the voltage Vresetf.
[0066] Here, in order to set the memory cell MCf to the reset
state, it is desirable that the voltage V.sub.MCf applied to the
memory cell MCf is approximately equal to the voltage Vresetn.
Therefore, the voltage Vresetf needs to be set larger than the
voltage Vresetn. However, when the voltage Vresetf is set to be
large, not only the voltage V.sub.MCf applied to the memory cell
MCf but also the voltage V.sub.MCn applied to the non-selected
memory cell MC is increased. In particular, a large voltage
V.sub.MCn is applied to the memory cell MCn, which may also cause
the memory cell MCn to be reset, and data stored in the memory cell
MCn is lost. Hereinafter, such loss of data may be referred to as
"disturbance".
[Configuration Example of Transistor Array TA]
[0067] The transistor array TA according to the present embodiment
prevents the occurrence of the disturbance. That is, the transistor
array TA according to the present embodiment is configured such
that the selected transistor STr located at the near bit side has a
larger voltage division in the reset operation and the selected
transistor STr located at the far bit side has a smaller voltage
division in the reset operation and the like. Thus, for example, as
shown in FIG. 13, in the reset operation of the memory cell MCf,
the voltage V.sub.STf applied to the selected transistor Str
connected to the memory cell MCn can be increased, and the voltage
V.sub.MCn applied to the memory cell MCn can be decreased.
[0068] Hereinafter, as methods for configuring the transistor array
TA in this way, a method for adjusting the channel width of the
selected transistor STr, a method for adjusting the amount or
concentration of impurities such as boron (B) in the p-type
semiconductor region s2 of the semiconductor portion S of the
selected transistor STr, and a method for adjusting the strength of
the electric field applied to the p-type semiconductor region s2 of
the selected transistor STr are exemplified.
[Transistor Array TA_A]
[0069] FIG. 14 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_A according to a first
configuration example. The transistor array TA_A is basically
configured as described with reference to FIG. 3. However, in the
transistor array TA_A, the selected transistor STr provided at the
near bit side has a smaller length L.sub.A in the X direction of
the p-type semiconductor region s2 of the semiconductor portion S
and a smaller facing area of the selected gate line SG. The
selected transistor STr provided at the far bit side has a larger
length LA in the X direction of the p-type semiconductor region s2
of the semiconductor portion S, and has a larger facing area of the
selected gate line SG.
[0070] The "facing area" here means, for example, the area of the
facing surface that faces the selected gate line SG in the outer
peripheral surface of the p-type semiconductor region s2. The area
of this facing surface is determined by, for example, observing a
cross section including a plurality of selected gate lines SG and a
plurality of p-type semiconductor regions s2 by Scanning Electron
Microscope (SEM), Transmission Electron Microscope (TEM), and the
like and calculating the length of the portion corresponding to the
facing surface in the contour line of the p-type semiconductor
region s2. For example, a portion of the contour line of the p-type
semiconductor region s2 of which distance to the selected gate line
SG is about the shortest distance or about the thickness of the
gate insulating film GI corresponds to the facing surface.
[0071] According to such a configuration, the selected transistor
STr provided at the near bit side has a smaller channel width of
the electron channel (i.e., the inversion layer) formed in the
semiconductor portion S, and the voltage division when the voltage
Vreset or the like is supplied increases. Thereby, occurrence of
the disturbance can be prevented.
[0072] In the example of FIG. 14, the plurality of p-type
semiconductor regions s2 arranged in the X direction all have
different lengths LA. However, such a configuration is merely an
example. For example, in a transistor array TA_A' shown in FIG. 15,
the plurality of selected transistors STr adjacent in the X
direction are grouped into a plurality of groups G.sub.A1,
G.sub.A2, and G.sub.A3. The p-type semiconductor region s2 in the
group provided at the near bit side (i.e., the group G.sub.A3) has
a smaller length L.sub.A in the X direction, and the p-type
semiconductor region s2 provided at the far bit side (i.e., the
group G.sub.A1) has a larger length L.sub.A. The plurality of
p-type semiconductor regions s2 in the same group have the same
length L.sub.A.
[0073] In the example of FIGS. 14 and 15, all the gate insulating
films GI are independent for each selected transistor STr. However,
the plurality of gate insulating films GI arranged in the X
direction may be connected to each other.
[Transistor Array TA_B]
[0074] FIG. 16 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_B according to a second
configuration example. The transistor array TA_B is basically
configured as described with reference to FIG. 3. However, in the
transistor array TA_B, the selected transistor STr provided at the
near bit side has a smaller facing area of the selected gate line
SG. The selected transistor STr provided at the far bit side has a
larger facing area of the selected gate line SG.
[0075] That is, the selected gate line SG of the transistor array
TA_B includes a pair of Y gate electrode portions sg.sub.B1
extending in the X direction and facing the p-type semiconductor
region s2 of the semiconductor portion S from the Y direction, and
a plurality of X gate electrode portions sg.sub.B2 connected to at
least one of the pair of Y gate electrode portions sg.sub.B1 and
facing the p-type semiconductor region s2 of the semiconductor
portion S from the X direction. The X gate electrode portion
sg.sub.B2 provided at the near bit side has a smaller length
L.sub.B in the Y direction, and the X gate electrode portion
sg.sub.B2 provided at the far bit side is a larger length L.sub.B
in the Y direction. In the illustrated example, two X gate
electrode portions sg.sub.B2 provided at the closest to far bit
side are connected to both of two Y gate electrode portions
sg.sub.B1 arranged in the Y direction. The other X gate electrode
portion sg.sub.B2 is connected to one of the two Y gate electrode
portions sg.sub.B1 arranged in the Y direction. The X gate
electrode portion sg.sub.B2 is not provided between the two p-type
semiconductor regions s2 provided on the nearest bit side.
[0076] According to such a configuration, the selected transistor
STr provided at the near bit side has a smaller channel width of
the electron channel formed in the semiconductor portion S, and the
voltage division when the voltage Vreset or the like is supplied
increases. Thereby, occurrence of the disturbance can be
prevented.
[0077] In the example of FIG. 16, the facing areas of the selected
gate lines SG of the plurality of p-type semiconductor regions s2
arranged in the X direction are all different. However, such a
configuration is merely an example. For example, the plurality of
selected transistors STr adjacent in the X direction may be grouped
into a plurality of groups, and the plurality of selected
transistors STr in the same group may have the same
configuration.
[0078] In the example of FIG. 16, one X gate electrode portion
sg.sub.B2 is provided between two semiconductor portions S arranged
in the X direction. However, such a configuration is merely an
example. For example, in a transistor array TA_B' shown in FIG. 17,
two X gate electrode portions sg.sub.B2 arranged in the Y direction
are provided between the two semiconductor portions S arranged in
the X direction.
[Transistor Array TA_C]
[0079] FIG. 18 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_C according to a third
configuration example. The transistor array TA_C is basically
configured as described with reference to FIG. 3. However, in the
transistor array TA_C, the selected transistor STr provided at the
near bit side has a larger length L.sub.C in the Y direction of the
p-type semiconductor region s2 of the semiconductor portion S. The
selected transistor STr provided at the far bit side has a smaller
length L.sub.C in the Y direction of the p-type semiconductor
region s2 of the semiconductor portion S.
[0080] Here, the selected transistor STr having the semiconductor
region S including polycrystalline silicon as a channel region is
different from, for example, a transistor having the surface of a
semiconductor substrate as a channel region, and has a small volume
of the p-type semiconductor region s2 functioning as a channel
region. In such the selected transistor STr, not only impurities
such as boron contained in the surface of the p-type semiconductor
region s2, but also impurities such as boron contained in the
entire p-type semiconductor region s2 affect the characteristics of
the selected transistor STr. For example, in the example of the
transistor array TA_C in FIG. 18, the selected transistor STr
provided at the near bit side has a larger length L.sub.C in the Y
direction of the p-type semiconductor region s2 of the
semiconductor portion S. Therefore, the p-type semiconductor region
s2 provided at the near bit side contains a larger amount of
impurities, making it difficult to form a channel. Accordingly, the
selected transistor STr provided at the near bit side increases the
voltage division when the voltage Vreset or the like is supplied.
Thereby, occurrence of the disturbance can be prevented.
[0081] In the example of FIG. 18, the plurality of p-type
semiconductor regions s2 arranged in the X direction all have
different lengths LC. However, such a configuration is merely an
example. For example, the plurality of selected transistors STr
adjacent in the X direction may be grouped into a plurality of
groups, and the plurality of selected transistors STr in the same
group may have the same configuration.
[0082] In the example of FIG. 18, all the gate insulating films GI
are independent for each selected transistor STr. However, the
plurality of gate insulating films GI arranged in the X direction
may be connected to each other.
[Transistor Array TA_D]
[0083] FIG. 19 is a schematic XY sectional view showing a
configuration of a transistor array TA_D according to a fourth
configuration example. FIG. 19 includes a schematic graph showing
the relationship between the position on the A-A' line in the XY
cross section and the concentration of impurities such as boron at
this position. The transistor array TA_D is basically configured as
described with reference to FIG. 3. However, in the transistor
array TA_D, the selected transistor STr provided at the near bit
side has a higher impurity concentration in the p-type
semiconductor region s2 of the semiconductor portion S. The
selected transistor STr provided at the far bit side has a lower
impurity concentration in the p-type semiconductor region s2 of the
semiconductor portion S.
[0084] According to such a configuration, the p-type semiconductor
region s2 provided at the near bit side contains a larger amount of
impurities, making it difficult to form a channel. Accordingly, the
selected transistor STr provided at the near bit side increases the
voltage division when the voltage Vreset or the like is supplied.
Thereby, occurrence of the disturbance can be prevented.
[0085] In the example of FIG. 19, the concentrations of impurities
such as boron in the plurality of p-type semiconductor regions s2
arranged in the X direction are all different. However, such a
configuration is merely an example. For example, the plurality of
selected transistors STr adjacent in the X direction may be grouped
into a plurality of groups, and the plurality of selected
transistors STr in the same group may have the same
configuration.
[0086] In the example of FIG. 19, all the gate insulating films GI
are independent for each selected transistor STr. However, the
plurality of gate insulating films GI arranged in the X direction
may be connected to each other.
[Transistor Array TA_E]
[0087] FIG. 20 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_E according to a fifth
configuration example. The transistor array TA_E is basically
configured as described with reference to FIG. 3. However, in the
transistor array TA_E, a gate insulating film GI.sub.E functions as
a ferroelectric film. For example, the gate insulating film
GI.sub.E may contain tetragonal hafnium oxide as described above.
For example, when a positive polarization is such that negative
electron charge is induced on the surface of the gate insulating
film GI.sub.E on the selected gate line SG side and positive
electron charge is induced on the surface of the semiconductor
portion S side, and a negative polarization is such that positive
electron charge is induced on the surface of the gate insulating
film GI.sub.E on the selected gate line SG side and negative charge
is induced on the surface of the semiconductor portion S side, the
gate insulating film GI.sub.E provided at the near bit side is more
strongly polarized in the negative direction, and the gate
insulating film GI.sub.E at the far bit side is more strongly
polarized in the positive direction. Therefore, positive electron
charge is induced on the surface of the p-type semiconductor region
s2 of the semiconductor portion S provided at the near bit side,
and negative electron charge is induced on the surface of the
p-type semiconductor region s2 of the semiconductor portion S
provided at the far bit side.
[0088] According to such a configuration, the selected transistor
STr provided at the near bit side has a weaker electric field
applied to the p-type semiconductor region s2, and the selected
transistor STr provided at the far bit side has a stronger electric
field applied to the p-type semiconductor region s2. Accordingly,
the selected transistor STr provided at the near bit side increases
the voltage division when the voltage Vreset or the like is
supplied. Thereby, occurrence of the disturbance can be
prevented.
[0089] According to such a configuration, after manufacturing the
semiconductor storage device, the threshold voltage of the selected
transistor Str can be adjusted after confirming the magnitude of
the voltage drop in the word line WL, and the occurrence of the
disturbance can be prevented with high accuracy.
[0090] When the state of polarization does not change for a certain
period of time, the ferroelectric may exhibit a so-called imprint
phenomenon in which the polarization state is difficult to change.
By such a phenomenon, the polarization state in the gate insulating
film GI.sub.E can be suitably maintained.
[0091] When such a configuration is adopted, for example, the
material of the gate insulating film GI.sub.E and the material of
the variable resistance film VR may be the same material. For
example, when using hafnium oxide (HfO.sub.x) as a material of the
gate insulating film GI.sub.E and the variable resistance film VR,
in the variable resistance film VR, a filament such as an oxygen
defect may be formed in the hafnium oxide layer, or the hafnium
oxide layer may be a tunnel insulating film functioning as a
ferroelectric film. In such a case, for example, the gate
insulating film GI.sub.E and the variable resistance film VR may be
formed in a common process.
[0092] In the example of FIG. 20, the gate insulating film GI.sub.E
of the selected transistor STr at the far-bit side is polarized in
the positive direction, whereby an electron channel is formed on
the surface of the p-type semiconductor region s2 of the
semiconductor portion S. However, when such a configuration is
adopted, in order to turn off the selected transistor STr at the
far bit side, it is necessary to supply a negative voltage to the
selected gate line SG. Therefore, in order to reduce power
consumption, it is also possible to adjust the polarizability and
the like of the gate insulating film GI.sub.E so that the selected
transistor STr at the far bit side is turned off even in a state
where no negative voltage is supplied to the selected gate line
SG.
[0093] The direction of polarization and the polarizability of each
selected transistor STr may be adjusted as appropriate. For
example, a plurality of gate insulating films GI.sub.E arranged in
the X direction may all have different polarizabilities. For
example, the plurality of selected transistors STr adjacent in the
X direction may be grouped into a plurality of groups, and the
polarization directions and polarizabilities of the plurality of
gate insulating films GI.sub.E in the same group may be the
same.
[0094] In the example of FIG. 20, all the gate insulating films
GI.sub.E are independent for each selected transistor STr. However,
for example, as shown in FIG. 21, the plurality of gate insulating
films GI.sub.E arranged in the X direction may be connected to each
other.
[Transistor Array TA_F]
[0095] FIG. 22 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_F according to a sixth
configuration example. The transistor array TA_F is basically
configured as described with reference to FIG. 3. However, in the
sixth configuration example, the selected gate line decoding
circuit includes AND circuits and voltage transfer circuits drv1
and drv2. Among the two end portions of the selected gate line SG
in the X direction, the end portion at the far-bit side is
connected to the voltage transfer circuit drv1, and the end portion
at the near bit side is connected to the voltage transfer circuit
drv2.
[0096] The voltage transfer circuit drv1 includes a voltage
transfer transistor pTr1 that makes the selected gate line SG
conductive with the ON voltage supply line when "L" is input to the
gate electrode, and a voltage transfer transistor nTr1 that makes
the selected gate line SG conductive with the OFF voltage supply
line when "H" is input to the gate electrode. The voltage transfer
circuit drv2 includes a voltage transfer transistor nTr2 that makes
the selected gate line SG conductive with a ground voltage supply
line when "H" is input to the gate electrode.
[0097] According to such a configuration, by passing a current
through the selected gate line SG, a voltage drop due to the wiring
resistance of the selected gate line SG occurs, and a voltage
gradient occurs in the selected gate line SG. Accordingly, the
selected transistor STr provided at the near bit side has a weaker
electric field applied to the p-type semiconductor region s2, and
the selected transistor STr provided at the far bit side has a
stronger electric field applied to the p-type semiconductor region
s2. Accordingly, the selected transistor STr provided at the near
bit side increases the voltage division when the voltage Vreset or
the like is supplied. Thereby, occurrence of the disturbance can be
prevented.
[0098] In the example of FIG. 20, all the gate insulating films GI
are independent for each selected transistor STr. However, the
plurality of gate insulating films GI arranged in the X direction
may be connected to each other.
Second Embodiment
[Memory Cell Array MCA']
[0099] FIG. 23 is a schematic perspective view showing a
configuration of a memory cell array MCA' and a transistor array
TA' according to a second embodiment. FIG. 24 is a schematic XY
cross-sectional view showing a partial configuration of the memory
cell array MCA'. FIG. 25 is a schematic XY cross-sectional view
showing a partial configuration of the transistor array TA'.
[0100] As shown in FIG. 23, the memory cell array MCA' according to
the present embodiment is basically configured in the same manner
as the memory cell array MCA according to the first embodiment.
However, the memory cell array MCA' according to the present
embodiment includes a wiring CMB connected to the plurality of word
lines WL arranged in the Y direction. A contact CC extending in the
Z direction is connected to the wiring CMB. In the present
embodiment, the word line WL is connected to the row decoder RD via
the wiring CMB and the contact CC.
[0101] As shown in FIG. 24, the wiring CMB and the contact CC
(i.e., CCr and CCl) are provided in the region on both end sides in
the X direction of the region in which the word line WL, the local
bit line LBL, and the variable resistance film VR are provided. In
the example of FIG. 24, the even-numbered word lines WL counted
from one end side in the Y direction are connected to the wiring
CMB provided on one end side in the X direction (i.e., the right
side in FIG. 24), and this wiring CMB is connected to the contact
CCr. The odd-numbered word lines WL are connected to the wiring CMB
provided on the other end side in the X direction (i.e., the left
side in FIG. 24), and this wiring CMB is connected to the contact
CCl.
[0102] According to such a configuration, compared with the memory
cell array MCA according to the first embodiment, the number of
wirings and contacts for connecting the word line WL and the row
decoder RD can be greatly reduced. For example, in the example of
FIG. 24, when focusing on the configuration corresponding to the
even-numbered word lines WL counted from one side in the Y
direction, one end side in the X direction (i.e., the right side in
FIG. 24) is the near bit side, and the other end side in X
direction (i.e., the left side in FIG. 24) is the far bit side. On
the other hand, when focusing on the configuration corresponding to
the odd-numbered word lines WL, the other end side in the X
direction (i.e., the left side in FIG. 24) is the near bit side,
and one end side in the X direction (i.e., the right side in FIG.
24) is the far bit side.
[Transistor Array TA']
[0103] Even when the even-numbered word lines WL are selected, and
even when the odd-numbered word lines WL are selected, the
transistor array TA' according to the present embodiment is
configured such that the selected transistor STr located at the
near bit side has a larger voltage division in the reset operation
and the selected transistor STr located at the far bit side has a
smaller voltage division in the reset operation and the like.
Hereinafter, this point will be described.
[0104] As shown in FIG. 23, the transistor arrays TA' according to
the present embodiment are basically configured in the same manner
as the transistor array TA according to the first embodiment.
However, for example, as shown in FIG. 25, a selected gate line SG'
according to the present embodiment includes a pair of electrode
portions sgl and sgr extending in the X direction and facing the
p-type semiconductor region s2 of the semiconductor portion S from
the Y direction.
[0105] In the present embodiment, for example, when the memory cell
MC connected to the contact CCr is selected during the read
operation, the set operation, and the reset operation, an ON
voltage is supplied to one of a plurality of electrode portions
sgr, and an OFF voltage is supplied to the other electrode portions
sgr and sgl. On the other hand, when the memory cell MC connected
to the contact CCl is selected, an ON voltage is supplied to one of
a plurality of electrode portions sgl, and an OFF voltage is
supplied to the other electrode portions sgr and sgl. For example,
in the plurality of AND circuits of the selected gate line decoding
circuit according to the present embodiment, among the plurality of
electrode portions sgr and sgl, the AND circuit corresponding to
one of the electrode portions sgr and sgl specified by the row
address RA outputs "L", and the other AND circuits output "H".
[0106] The configuration of the transistor array TA' shown in FIGS.
23 and 25 is a schematic view for description. A configuration
example of the transistor array TA' according to the present
embodiment will be described later with reference to FIGS. 26 to
29.
[Transistor Array TA_A'']
[0107] FIG. 26 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_A'' according to a first
configuration example. The transistor array TA_A'' is basically
configured as described with reference to FIG. 23. However, in the
transistor array TA_A'', the plurality of p-type semiconductor
regions s2 arranged in the X direction are formed in a trapezoidal
shape in the XY cross section of FIG. 26. The p-type semiconductor
region s2 provided on one end side in the X direction (i.e., the
right side in FIG. 26) has a smaller facing area SA of the
electrode portion sgr and a larger facing area S.sub.A of the
electrode portion sgl. The p-type semiconductor region s2 provided
on the other end side in the X direction (i.e., the left side in
FIG. 26) has a larger facing area S.sub.A of the electrode portion
sgr and a smaller facing area S.sub.A of the electrode portion
sgl.
[0108] In the example of FIG. 26, the facing areas of the plurality
of p-type semiconductor regions s2 arranged in the X direction that
face the electrode portions sgr and sgl are all different. However,
such a configuration is merely an example. For example, the
plurality of selected transistors STr adjacent in the X direction
may be grouped into a plurality of groups, and the plurality of
selected transistors STr in the same group may have the same
configuration.
[0109] In the example of FIG. 26, all the gate insulating films GI
are independent for each selected transistor STr. However, the
plurality of gate insulating films GI arranged in the X direction
may be connected to each other.
[Transistor Array TA_B'']
[0110] FIG. 27 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_B'' according to a second
configuration example. The transistor array TA_B'' is basically
configured as described with reference to FIG. 23. However, in the
transistor array TA_B'', the p-type semiconductor region s2
provided on one end side in the X direction (i.e., the right side
in FIG. 26) has a smaller facing area S.sub.A of the electrode
portion sgr and a larger facing area S.sub.A of the electrode
portion sgl. The p-type semiconductor region s2 provided on the
other end side in the X direction (i.e., the left side in FIG. 26)
has a larger facing area S.sub.A of the electrode portion sgr and a
smaller facing area S.sub.A of the electrode portion sgl.
[0111] That is, in the transistor array TA_B'', the electrode
portions sgr and sgl each include an Y gate electrode portion
sg.sub.B1'' extending in the X direction and facing the p-type
semiconductor region s2 of the semiconductor portion S from the Y
direction, and a plurality of X gate electrode portions sg.sub.B2''
connected to the Y gate electrode portion sg.sub.B1'' and facing
the p-type semiconductor region s2 of the semiconductor portion S
from the X direction. Among the plurality of X gate electrode
portions sg.sub.B2'' connected to the Y gate electrode portion
sg.sub.B1'' of the electrode portion sgr, the X gate electrode
portion sg.sub.B2'' provided at one end side in the X direction
(i.e., the right side in FIG. 26) has a smaller length L.sub.B in
the Y direction, and the X gate electrode portion sg.sub.B2
provided at the other end side in the X direction (i.e., the left
side in FIG. 26) has the larger length L.sub.B in the Y direction.
Among the plurality of X gate electrode portions sg.sub.B2''
connected to the Y gate electrode portion sg.sub.B1'' of the
electrode portion sgl, the X gate electrode portion sg.sub.B2''
provided at one end side in the X direction (i.e., the right side
in FIG. 26) has a larger length L.sub.B in the Y direction, and the
X gate electrode portion sg.sub.B2 provided at the other end side
in the X direction (i.e., the left side in FIG. 26) has a smaller
length L.sub.B in the Y direction.
[0112] In the example of FIG. 27, the facing areas of the plurality
of p-type semiconductor regions s2 arranged in the X direction that
face the electrode portions sgr and sgl are all different. However,
such a configuration is merely an example. For example, the
plurality of selected transistors STr adjacent in the X direction
may be grouped into a plurality of groups, and the plurality of
selected transistors STr in the same group may have the same
configuration.
[Transistor Array TA_E'']
[0113] FIG. 28 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_E'' according to a third
configuration example. The transistor array TA_E'' is basically
configured as described with reference to FIG. 23. However, in the
transistor array TA_E'', the gate insulating film GI.sub.E
functions as a ferroelectric film. For example, the gate insulating
film GI.sub.E may contain tetragonal hafnium oxide as described
above. Among the plurality of gate insulating films GI.sub.E
provided between the electrode portion sgr and the p-type
semiconductor region s2, the gate insulating film GI.sub.E provided
on one end side in the X direction (i.e., the right side in FIG.
28) is more strongly polarized in the negative direction, and the
gate insulating film GI.sub.E provided on the other end side in the
X direction (i.e., the left side in FIG. 26) is strongly polarized
in the positive direction. Among the plurality of gate insulating
films GI.sub.E provided between the electrode portion sgl and the
p-type semiconductor region s2, the gate insulating film GI.sub.E
provided on one end side in the X direction (i.e., the right side
in FIG. 28) is more strongly polarized in the positive direction,
and the gate insulating film GI.sub.E provided on the other end
side in the X direction (i.e., the left side in FIG. 26) is more
strongly polarized in the negative direction.
[0114] In the example of FIG. 28, a part of the gate insulating
film GI.sub.E is polarized in the positive direction, whereby an
electron channel is formed on the surface of the p-type
semiconductor region s2 of the semiconductor portion S. However, it
is also possible to adjust the polarizability and the like of the
gate insulating film GI.sub.E so that the selected transistor STr
at the far bit side is turned off even in a state where no negative
voltage is supplied to the selected gate line SG.
[0115] The direction of polarization and the polarizability of each
selected transistor STr may be adjusted as appropriate. For
example, a plurality of gate insulating films GI.sub.E arranged in
the X direction may all have different polarizabilities. For
example, the plurality of selected transistors STr adjacent in the
X direction may be grouped into a plurality of groups, and the
polarization directions and polarizabilities of the plurality of
gate insulating films GI.sub.E in the same group may be the
same.
[0116] In the example of FIG. 28, all the gate insulating films
GI.sub.E are independent for each selected transistor STr. However,
for example, the plurality of gate insulating films GI.sub.E
arranged in the X direction may be connected to each other.
[Transistor Array TA_F'']
[0117] FIG. 29 is a schematic XY cross-sectional view showing a
configuration of a transistor array TA_F'' according to a fourth
configuration example. The transistor array TA_E'' is basically
configured as described with reference to FIG. 23. However, in the
fourth configuration example, the selected gate line decoding
circuit includes the voltage transfer circuits drv1 and drv2. The
end portion of one end side of the electrode portion sgr in the X
direction (i.e., the right side in FIG. 28) is connected to the
voltage transfer circuit drv2, and the end portion of the other end
in the X direction (i.e., the left side in FIG. 26) is connected to
the voltage transfer circuit drv1. The end portion of one end side
of the electrode portion sgl in the X direction (i.e., the right
side in FIG. 28) is connected to the voltage transfer circuit drv1,
and the end portion of the other end in the X direction (i.e., the
left side in FIG. 26) is connected to the voltage transfer circuit
drv2.
[0118] In the example of FIG. 29, all the gate insulating films GI
are independent for each selected transistor STr. However, the
plurality of gate insulating films GI arranged in the X direction
may be connected to each other.
Third Embodiment
[0119] FIG. 30 is a schematic perspective view showing a
configuration of the memory cell array MCA' and transistor arrays
TA.sub.L and TA.sub.U according to a third embodiment.
[0120] As shown in FIG. 30, the semiconductor storage device
according to the present embodiment includes the memory cell array
MCA', the transistor array TA.sub.L provided below the memory cell
array MCA', and the transistor array TA.sub.U provided above the
memory cell array MCA'.
[0121] The transistor array TA.sub.L includes a plurality of global
bit lines GBL.sub.L arranged in the X direction and extending in
the Y direction, a plurality of selected transistors STr.sub.L
arranged in the X direction and the Y direction, and a plurality of
selected gate lines SG.sub.L arranged in the Y direction and
extending in the X direction. These configurations are the same as
the plurality of global bit lines GBL, the plurality of selected
transistors STr, and the plurality of selected gate lines SG
according to the first embodiment.
[0122] The transistor array TA.sub.U includes a plurality of global
bit lines GBL.sub.U arranged in the X direction and extending in
the Y direction, a plurality of selected transistors STr.sub.U
arranged in the X direction and the Y direction, and a plurality of
selected gate lines SG.sub.U arranged in the Y direction and
extending in the X direction. These configurations are the same as
the plurality of global bit lines GBL, the plurality of selected
transistors STr, and the plurality of selected gate lines SG
according to the first embodiment. However, the transistor array
TA.sub.U has a configuration in which the transistor array TA.sub.L
is turned upside down.
[0123] Similar to the second embodiment, even when the
even-numbered word lines WL in FIG. 24 are selected, or even when
the odd-numbered word lines WL are selected, the transistor arrays
TA.sub.L and TA.sub.U according to the present embodiment are
configured such that the selected transistor STr located at the
near bit side has a larger voltage division in the reset operation
and the selected transistor STr located at the far bit side has a
smaller voltage division in the reset operation and the like.
Hereinafter, this point will be described.
[0124] The transistor arrays TA.sub.L and TA.sub.U according to the
present embodiment are basically configured in the same manner as
the transistor array TA according to the first embodiment. However,
in the present embodiment, for example, when the memory cell MC
connected to the contact CCr is selected during the read operation,
the set operation, and the reset operation, an ON voltage is
supplied to one of the plurality of selected gate lines SG.sub.L,
and an OFF voltage is supplied to the other selected gate lines
SG.sub.L and SG.sub.U. On the other hand, when the memory cell MC
connected to the contact CCl is selected, an ON voltage is supplied
to one of the plurality of selected gate lines SG.sub.U, and an OFF
voltage is supplied to the other selected gate lines SG.sub.L and
SG.sub.U. For example, in the plurality of AND circuits of the
selected gate line decoding circuit according to the present
embodiment, among the plurality of selected gate lines SG.sub.L and
SG.sub.U, the AND circuit corresponding to one of the selected gate
lines SG.sub.L and SG.sub.U specified by the row address RA outputs
"L", and the other AND circuits output "H".
[0125] The transistor arrays TA.sub.L and TA.sub.U basically have
the same configuration as the transistor array TA according to the
first embodiment. However, in the transistor array TA.sub.L, the
selected transistor STr provided at one end in the X direction has
a larger voltage division when the voltage Vreset or the like is
supplied, and the selected transistor STr provided on the other end
side in the X direction has a smaller voltage division when the
voltage Vreset or the like is supplied. On the other hand, in the
transistor array TA.sub.U, the selected transistor STr provided at
one end in the X direction has a smaller voltage division when the
voltage Vreset or the like is supplied, and the selected transistor
STr provided on the other end side in the X direction has a larger
voltage division when the voltage Vreset or the like is supplied.
Although the specific configuration of the transistor arrays
TA.sub.L and TA.sub.U can be adjusted as appropriate, for example,
any of the configurations described with reference to FIGS. 14 to
22 may be provided.
[0126] For example, when the structure of the transistor array TA_A
as described with reference to FIG. 14 is adopted as the
configuration of the transistor array TA.sub.L, it is conceivable
to adopt, as the configuration of the transistor array TA.sub.U, a
structure that is line-symmetric with the transistor array TA_A as
shown in FIG. 31. Even if the structure of the transistor array
TA_A is adopted as the structure of the transistor array TA.sub.L,
any of the configurations described with reference to FIGS. 15 to
22 may be adopted as the configuration of the transistor array
TA.sub.U.
Other Embodiments
[0127] The semiconductor storage device according to the first to
third embodiments has been described above. However, the above
configuration are merely examples, and any other configurations may
be adopted as appropriate. For example, some of the above-described
configurations may be used in combination.
[0128] In the above description, in order to mitigate the influence
of the voltage drop in the word line WL, a difference in
configuration or the like is provided between the plurality of
selected transistors STr arranged in the X direction. However, for
example, in order to mitigate the influence of the voltage drop in
the global bit line GBL, a difference in configuration or the like
may be provided between the plurality of selected transistors STr
arranged in the Y direction. In order to reduce the influence of
the voltage drop in the peripheral circuit or the like, a
difference in configuration or the like may be provided between the
plurality of selected transistors STr arranged in the X direction
or the Y direction.
[Others]
[0129] Although several embodiments of the present disclosure have
been described, these embodiments have been presented by way of
example and are not intended to limit the scope of the disclosure.
These novel embodiments may be implemented in various other forms,
and various omissions, replacements, and changes may be made
without departing from the spirit of the disclosure. These
embodiments and modification examples thereof are included in the
scope and gist of the disclosure and are included in the disclosure
described in the claims and the equivalent scope thereof.
* * * * *