U.S. patent application number 16/307468 was filed with the patent office on 2021-03-18 for manufacturing method for ito common electrode on cf substrate side.
This patent application is currently assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.. The applicant listed for this patent is Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.. Invention is credited to Wei Ren.
Application Number | 20210080789 16/307468 |
Document ID | / |
Family ID | 1000005430102 |
Filed Date | 2021-03-18 |
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United States Patent
Application |
20210080789 |
Kind Code |
A1 |
Ren; Wei |
March 18, 2021 |
MANUFACTURING METHOD FOR ITO COMMON ELECTRODE ON CF SUBSTRATE
SIDE
Abstract
The manufacturing method for ITO common electrode on CF
substrate side of the present invention, after diving entire
surface of the ITO film into multiple ITO blocks, performing a
laser cutting again along the uniform film thickness portion at the
periphery of the entire surface of the ITO film, and a laser
cutting path at the uniform film thickness portion at the periphery
of the entire surface of the ITO film form a closed pattern such
that the connection of each ITO block at the uneven thickness
portion of the periphery of the entire surface of the ITO film can
be completely cut off, and the multiple ITO blocks located in the
closed pattern constitute the ITO common electrode on the CF
substrate side, thereby the insulation between the multiple ITO
blocks is improved, ensuring that different ITO blocks can
independently inputted with different Curing signals without
affecting each other.
Inventors: |
Ren; Wei; (Shenzhen,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Shenzhen China Star Optoelectronics Semiconductor Display
Technology Co., Ltd. |
Shenzhen |
|
CN |
|
|
Assignee: |
Shenzhen China Star Optoelectronics
Semiconductor Display Technology Co., Ltd.
Shenzhen
CN
|
Family ID: |
1000005430102 |
Appl. No.: |
16/307468 |
Filed: |
September 19, 2018 |
PCT Filed: |
September 19, 2018 |
PCT NO: |
PCT/CN2018/106574 |
371 Date: |
December 5, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G02F 1/1368 20130101;
G02F 1/134309 20130101; G02F 1/13439 20130101 |
International
Class: |
G02F 1/1343 20060101
G02F001/1343; G02F 1/1368 20060101 G02F001/1368 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 20, 2018 |
CN |
201810639871.6 |
Claims
1. A manufacturing method for ITO common electrode on CF substrate
side, comprising steps of: step S1, providing a CF substrate; step
S2, forming a continuous uninterrupted entire surface of ITO film
on the CF substrate, wherein a peripheral edge portion of the
entire surface of the ITO film includes a uniform film thickness
portion and an uneven film thickness portion around a periphery of
the uniform film thickness portion, the film thickness of the
entire surface of the ITO film is uniform except for the peripheral
edge portion; step S3, cutting the entire surface of the ITO film
using a laser cutting, and the entire surface of the ITO film is
divided into multiple ITO block; and step S4, performing the laser
cutting again along the uniform film thickness portion at the
peripheral edge portion of the entire surface of the ITO film such
that a laser cutting path at the uniform film thickness portion at
the peripheral edge portion of the entire surface of the ITO film
form a closed pattern; and multiple ITO blocks located in the
closed pattern form an ITO common electrode of a side of the CF
substrate.
2. The manufacturing method for ITO common electrode on CF
substrate side according to claim 1, wherein in the step S2, a
physical vapor deposition process is adopted to form the entire
surface of the ITO film.
3. The manufacturing method for ITO common electrode on CF
substrate side according to claim 2, wherein a film thickness of
the entire surface of ITO film is 100 nm.about.150 nm.
4. The manufacturing method for ITO common electrode on CF
substrate side according to claim 1, wherein a laser light adopted
is an infrared laser light.
5. The manufacturing method for ITO common electrode on CF
substrate side according to claim 4, wherein a wavelength band of
the infrared laser light is 106 nm.about.780 nm.
6. The manufacturing method for ITO common electrode on CF
substrate side according to claim 1, wherein a shape of the ITO
block is a rectangle.
7. The manufacturing method for ITO common electrode on CF
substrate side according to claim 1, wherein a closed pattern
formed by the laser cutting path at the uniform film thickness
portion at the peripheral edge portion of the entire surface of the
ITO film is rectangular.
8. The manufacturing method for ITO common electrode on CF
substrate side according to claim 4, wherein the infrared laser is
generated by a laser cutter
9. The manufacturing method for ITO common electrode on CF
substrate side according to claim 1, wherein different ITO blocks
independently input with different electric signal.
Description
FIELD OF THE INVENTION
[0001] The present invention relates a display device manufacturing
field, and more particularly to a manufacturing method for ITO
common electrode on CF substrate side.
BACKGROUND OF THE INVENTION
[0002] Currently, liquid crystal displays (LCDs) dominate the field
of flat panel displays.
[0003] Most of the LCDs on the market are backlight type liquid
crystal display devices, which include a case, a liquid crystal
panel disposed in the case, and a backlight module disposed in the
case. The liquid crystal panel is formed by a color filter
substrate (CF), a thin-film transistor array substrate, and a
liquid crystal layer disposed between the two substrates. The
working principle is to control the rotation of the liquid crystal
molecules of the liquid crystal layer by applying a driving voltage
on the two glass substrates, and refract the light of the backlight
module to generate an image.
[0004] Wherein, a common electrode made of an ITO film is deposed
on the CF substrate side. The ITO film, that is, a tin-doped indium
tin oxide film, has high electrical conductivity, high visible
light transmittance, high mechanical hardness, and good chemical
stability. Referring to FIG. 1, in the process of liquid crystal
alignment and forming a pre-tilt angle of liquid crystal molecules,
different electrical signals need to be inputted to different
regions of the ITO common electrode on the CF substrate side
(referred to as Curing signal in the industry), so that the ITO
common electrode 100 at the CF substrate side is divided into
multiple insulated ITO blocks 101 (the shape of each ITO block 101
is usually a simple rectangle), so that different ITO blocks 101
can independently access different Curing signals without affecting
each other.
[0005] At present, in the field of LCD process technology, the ITO
common electrode 100 at CF substrate side is generally divided into
multiple ITO blocks 101 by a laser (a two-dot chain line in FIG. 1
indicates a laser cutting path). However, the existing method that
uses the laser for cutting ITO has a drawback. As shown in FIG. 2
and FIG. 3, due to the uneven film thickness when the ITO is formed
on the entire surface, the thickness of the ITO film located at the
peripheral edge is thinner than that of the ITO film in other
regions, and the thinner the ITO film is, the weaker the absorption
of laser energy is. Correspondingly, the thinner thickness of the
ITO film is, the lower surface temperature of the ITO film is, so
that the ITO film located at the peripheral edge cannot be cut by
the laser, and there is still a connection between the ITO blocks
101 in FIG. 1 such that between the ITO blocks 101, the insulation
is poor. In this way, subsequent input of different Curing signals
for different ITO blocks 101 will affect each other.
SUMMARY OF THE INVENTION
[0006] An object of the present invention is to provide a
manufacturing method for ITO common electrode on CF substrate side,
which can improve the insulation between the multiple ITO blocks
constituting the ITO common electrode, and ensure that different
ITO blocks can be independently inputted with different Curing
signals without affecting each other.
[0007] In order to achieve the above purpose, the present invention
provides a manufacturing method for ITO common electrode on CF
substrate side, comprising steps of: providing a CF substrate;
forming a continuous uninterrupted entire surface of ITO film on
the CF substrate, wherein a peripheral edge portion of the entire
surface of the ITO film includes a uniform film thickness portion
and an uneven film thickness portion around a periphery of the
uniform film thickness portion, the film thickness of the entire
surface of the ITO film is uniform except for the peripheral edge
portion; cutting the entire surface of the ITO film using a laser
cutting, and the entire surface of the ITO film is divided into
multiple ITO block; and performing a laser cutting again along the
uniform film thickness portion at the peripheral edge portion of
the entire surface of the ITO film such that a laser cutting path
at the uniform film thickness portion at the peripheral edge
portion of the entire surface of the ITO film form a closed
pattern; and multiple ITO blocks located in the closed pattern form
an ITO common electrode of a side of the CF substrate.
[0008] Wherein in this step S2, a physical vapor deposition process
is adopted to form the entire surface of the ITO film.
[0009] Wherein a film thickness of the entire surface of ITO film
is 100 nm.about.150 nm.
[0010] Wherein a laser light adopted is an infrared laser
light.
[0011] Wherein a wavelength band of the infrared laser light is 106
nm.about.780 nm.
[0012] Wherein a shape of the ITO block is a rectangle.
[0013] Wherein a closed pattern formed by the laser cutting path at
the uniform film thickness portion at the peripheral edge portion
of the entire surface of the ITO film is rectangular.
[0014] Wherein the infrared laser is generated by a laser
cutter
[0015] Wherein different ITO blocks independently access different
electric signal.
[0016] The advantageous effects of the present invention, the
manufacturing method for ITO common electrode on CF substrate side
of the present invention, after diving the entire surface of the
ITO film into multiple ITO blocks, performing a laser cutting again
along the uniform film thickness portion at the periphery of the
entire surface of the ITO film, and a laser cutting path at the
uniform film thickness portion at the periphery of the entire
surface of the ITO film form a closed pattern such that the
connection of each ITO block at the uneven thickness portion of the
periphery of the entire surface of the ITO film can be completely
cut off, and the multiple ITO blocks located in the closed pattern
constitute the ITO common electrode on the CF substrate side,
thereby the insulation between the multiple ITO blocks is improved,
ensuring that different ITO blocks can independently inputted with
different Curing signals without affecting each other.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to further understand the features and technical
contents of the present invention, please refer to the following
detailed description of the invention and the accompanying
drawings. The drawings are provided for purposes of illustration
and description only and are not intended to be limiting.
[0018] In the drawings,
[0019] FIG. 1 is a schematic plan view of ITO common electrode on
CF substrate side in the conventional art.
[0020] FIG. 2 is a schematic cross-sectional view of state of an
ITO film having uneven film thickness when cutting by a laser at
different positions.
[0021] FIG. 3 is schematic diagram of a relationship between the
film thickness and the surface temperature of the ITO film when
laser cutting.
[0022] FIG. 4 is a flow chart of a manufacturing method for ITO
common electrode on CF substrate side according to the present
invention.
[0023] FIG. 5 is a schematic plan view of a step S2 of the
manufacturing method for ITO common electrode on CF substrate side
according to the present invention.
[0024] FIG. 6 is a schematic cross-sectional view corresponding to
A-A in FIG. 5.
[0025] FIG. 7 is a schematic cross-sectional view corresponding to
B-B in FIG. 5.
[0026] FIG. 8 is a schematic plan view of a step S3 of the
manufacturing method for ITO common electrode on CF substrate side
according to the present invention.
[0027] FIG. 9 is a schematic cross-sectional view corresponding to
A-A in FIG. 8.
[0028] FIG. 10 is a schematic cross-sectional view corresponding to
B-B in FIG. 8.
[0029] FIG. 11 is a schematic plan view of a step S3 of the
manufacturing method for ITO common electrode on CF substrate side
according to the present invention.
[0030] FIG. 12 is a schematic cross-sectional view corresponding to
A-A in FIG. 11.
[0031] FIG. 13 is a schematic cross-sectional view corresponding to
B-B in FIG. 11.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0032] In order to further clarify the technical means and effects
of the present invention, the following detailed description will
be made in conjunction with the preferred embodiments of the
invention and the accompanying drawings.
[0033] Referring to FIG. 4, the present invention provides a
manufacturing method for ITO common electrode on CF substrate side,
comprising the following steps:
[0034] Step S1, providing a CF substrate 1.
[0035] Step S2, referring to FIG. 5 to FIG. 7, forming a continuous
uninterrupted entire surface of ITO film 2 on the CF substrate
1.
[0036] Specifically, in this step S2, forming the entire surface of
the ITO film 2 by a physical vapor deposition (PVD) process, and a
film thickness of the entire surface of ITO film 2 is 100
nm.about.150 nm.
[0037] As shown in FIG. 6 and FIG. 7, restricting by the vacuum
coating process itself, a peripheral edge portion of the entire
surface of the ITO film 2 includes a uniform film thickness portion
and an uneven film thickness portion around a periphery of the
uniform film thickness portion. The film thickness of the entire
surface of the ITO film 2 is uniform except for the peripheral edge
portion, and a thickness of the uneven film thickness portion is
thinner than a thickness of the other uniform film thickness
portion.
[0038] Step S3, referring to FIG. 8 to FIG. 10, cutting the entire
surface of the ITO film 2 using a laser cutting (a laser cutting
path is indicated by a chain double-dashed line in FIG. 8), and the
entire surface of the ITO film 2 is divided into multiple ITO
blocks 21.
[0039] Specifically, the laser light is an infrared (IR) laser
light generated by a laser cutter M, and a wavelength band is
preferably 106 nm to 780 nm.
[0040] As shown in FIG. 8, a shape of the ITO block 21 is
preferably a regular rectangle.
[0041] It is worth noting that when performing a laser cutting, the
thinner the ITO film thickness is, the weaker the absorption of the
laser energy is. Accordingly, when the film thickness is thinner,
the surface temperature of the ITO film is lower. The uneven film
thickness portion at the peripheral edge portion of the entire
surface of the ITO film 2 cannot be cut by the laser. Accordingly,
after the step S3 is performed, there is actually a connection
between the respective ITO blocks 21 at the dotted line frame
illustrated in FIG. 8, so that the insulation between the
respective ITO blocks 21 is poor.
[0042] Step S4, referring to FIG. 11 to FIG. 13, performing a laser
cutting again along the uniform film thickness portion at the
peripheral edge portion of the entire surface of the ITO film 2
such that a laser cutting path P (indicated by a chain
double-dashed line in FIG. 11) at the uniform film thickness
portion at the peripheral edge portion of the entire surface of the
ITO film 2 form a closed pattern.
[0043] By performing this step S4, the connection of each ITO
blocks 21 at the uneven film thickness portion at the peripheral
edge portion of the entire surface of the ITO film 2 can be
completely cut off, and the multiple ITO blocks 21 located in the
closed pattern form an ITO common electrode COM of CF substrate
side such that the insulation between the multiple ITO blocks 21 is
improved (experimentally verified, the impedance between any two
ITO blocks 21 can reach 20 MO or more) so as to ensure that
different ITO blocks 21 can independently access different Curing
signals without affecting each other.
[0044] Specifically, the laser light used in the step S4 is still
an IR laser generated by the laser cutter M, and the wavelength
band is preferably 106 nm to 780 nm.
[0045] The closed pattern formed by the laser cutting path P at the
uniform film thickness portion at the peripheral edge portion of
the entire surface of the ITO film 2 is preferably rectangular.
[0046] In summary, the manufacturing method for ITO common
electrode on CF substrate side of the present invention, after
diving the entire surface of the ITO film into multiple ITO blocks,
performing a laser cutting again along the uniform film thickness
portion at the periphery of the entire surface of the ITO film, and
a laser cutting path at the uniform film thickness portion at the
periphery of the entire surface of the ITO film form a closed
pattern such that the connection of each ITO block at the uneven
thickness portion of the periphery of the entire surface of the ITO
film can be completely cut off, and the multiple ITO blocks located
in the closed pattern constitute the ITO common electrode on the CF
substrate side, thereby the insulation between the multiple ITO
blocks is improved, ensuring that different ITO blocks can
independently inputted with different Curing signals without
affecting each other.
[0047] In the above, various other corresponding changes and
modifications can be made according to the technical solutions and
technical ideas of the present invention to those skilled in the
art. All such changes and modifications are intended to be included
within the scope of the appended claims.
* * * * *