U.S. patent application number 16/571287 was filed with the patent office on 2021-03-18 for customized thin film optical element fabrication system and method.
The applicant listed for this patent is Halliburton Energy Services, Inc.. Invention is credited to Bin DAI, Darren GASCOOKE, Christopher Michael JONES, Jian LI, Michael T. PELLETIER, James M. PRICE.
Application Number | 20210080380 16/571287 |
Document ID | / |
Family ID | 1000004367947 |
Filed Date | 2021-03-18 |
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United States Patent
Application |
20210080380 |
Kind Code |
A1 |
JONES; Christopher Michael ;
et al. |
March 18, 2021 |
Customized Thin Film Optical Element Fabrication System and
Method
Abstract
A system comprising (i) thin film optical element comprising
substrate and thin film stack (.gtoreq.2 film layers; uniform
thickness--variation of less than .+-.5% in any 10 mm.sup.2 stack)
deposited on substrate's first side; (ii) holder comprising at
least one opening; wherein holder has inner side and outer side
having beveled edge extending into lip having flat side and beveled
edge side; wherein beveled edge/beveled edge side of lip form angle
<45.degree. with flat side of lip/first side; wherein flat side
of lip and holder inner side define socket receiving substrate;
wherein opening exposes first side to deposition plume; wherein
first side contacts flat side of lip, thereby allowing film stack
deposition on first side; wherein beveled edge side/beveled edge
provide film uniformity, and (iii) deposition source providing
plume traveling towards first side perpendicular to flat side of
lip/first deposition side; and wherein beveled edge side faces
plume.
Inventors: |
JONES; Christopher Michael;
(Katy, TX) ; DAI; Bin; (Spring, TX) ;
PRICE; James M.; (Cypress, TX) ; LI; Jian;
(Houston, TX) ; PELLETIER; Michael T.; (Houston,
TX) ; GASCOOKE; Darren; (Houston, TX) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Halliburton Energy Services, Inc. |
Houston |
TX |
US |
|
|
Family ID: |
1000004367947 |
Appl. No.: |
16/571287 |
Filed: |
September 16, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 14/50 20130101;
G01N 21/01 20130101; G01N 21/17 20130101; C23C 14/30 20130101; C23C
14/042 20130101; E21B 49/08 20130101; C23C 14/34 20130101 |
International
Class: |
G01N 21/01 20060101
G01N021/01; C23C 14/30 20060101 C23C014/30; C23C 14/34 20060101
C23C014/34; C23C 14/50 20060101 C23C014/50; C23C 14/04 20060101
C23C014/04; G01N 21/17 20060101 G01N021/17 |
Claims
1. A system for making a thin film optical element comprising: (i)
a thin film optical element comprising a substrate and a first thin
film stack, wherein the first thin film stack is deposited on a
first deposition side of the substrate; wherein the first thin film
stack comprises two or more film layers; wherein the first thin
film stack is characterized by a first uniform film thickness; and
wherein the first uniform film thickness is defined as a thickness
variation of less than about .+-.5% in any 10 mm.sup.2 of the first
thin film stack, when compared to an average first thin film stack
thickness across the entire first thin film stack; (ii) a holder
comprising at least one holder opening; wherein the holder has a
holder outer side and a holder inner side; wherein the holder outer
side has at least one beveled edge extending into a lip; wherein
the beveled edge and the lip define the at least one holder
opening; wherein the lip has a substantially flat side and a
beveled edge side; wherein the beveled edge and/or the beveled edge
side of the lip form an angle of less than about 45.degree. with
the substantially flat side of the lip and/or the first deposition
side; wherein the substantially flat side of the lip and the holder
inner side define a holder socket; wherein the holder is configured
to receive the substrate in the holder socket; wherein the holder
opening is configured to expose the first deposition side of the
substrate to a deposition plume; wherein a portion of the first
deposition side of the substrate contacts the substantially flat
side of the lip, thereby allowing for the first thin film stack to
be deposited on the first deposition side of the substrate; and
wherein the beveled edge side of the lip and/or the beveled edge
provide for the first uniform film thickness of the first thin film
stack; and (iii) a deposition source configured to provide the
deposition plume for depositing the first thin film stack on the
first deposition side of the substrate; wherein the deposition
plume travels towards the first deposition side of the substrate at
a direction substantially perpendicular to the substantially flat
side of the lip and/or to the first deposition side of the
substrate; and wherein the beveled edge side of the lip faces the
deposition plume.
2. The system of claim 1, wherein a value of the angle between (a)
the substantially flat side of the lip and/or the first deposition
side of the substrate, and (b) the beveled edge side of the lip
and/or the beveled edge is effective for minimizing edge effects of
a given deposition plume spatial profile.
3. The system of claim 1, wherein the thin film optical element is
characterized by a size of the first deposition side of the
substrate of less than about 0.5 inches (12.7 mm).
4. The system of claim 1, wherein the lip is characterized by a
terminal edge that further defines the holder opening, wherein the
terminal edge is selected from the group consisting of a sharp
terminal edge, a blunted terminal edge, and a deflecting terminal
edge.
5. The system of claim 1, wherein the substrate has a second
deposition side spatially opposed to the first deposition side;
wherein the thin film optical element further comprises a second
thin film stack, wherein the second thin film stack is deposited on
the second deposition side of the substrate; wherein the second
thin film stack comprises two or more film layers; wherein the
second thin film stack is characterized by a second uniform film
thickness; wherein the second uniform film thickness is defined as
a thickness variation of less than about .+-.5% in any 10 mm.sup.2
of the second thin film stack, when compared to an average second
thin film stack thickness across the entire second thin film
stack.
6. The system of claim 5 further comprising a mating holder;
wherein the mating holder contacts the holder and the substrate;
wherein the mating holder provides for securing the substrate in
place for the deposition of the first thin film stack on the first
deposition side of the substrate and/or the deposition of the
second thin film stack on the second deposition side of the
substrate; wherein the mating holder comprises at least one mating
holder opening; wherein the mating holder has a mating holder outer
side and a mating holder inner side; wherein the mating holder
inner side contacts the holder inner side; wherein the mating
holder outer side has at least one beveled edge extending into a
lip; wherein the beveled edge and the lip of the mating holder
define the at least one mating holder opening; wherein the lip of
the mating holder has a substantially flat side and a beveled edge
side; wherein the beveled edge and/or the beveled edge side of the
lip of the mating holder form an angle of less than about
45.degree. with the substantially flat side of the lip of the
mating holder and/or the second deposition side; wherein the
substantially flat side of the lip of the mating holder and the
mating holder inner side define a mating holder socket; wherein the
mating holder is configured to receive the substrate in the mating
holder socket; wherein the mating holder opening is configured to
expose the second deposition side of the substrate to a deposition
plume; wherein a portion of the second deposition side of the
substrate contacts the substantially flat side of the lip of the
mating holder, thereby allowing for the second thin film stack to
be deposited on the second deposition side of the substrate;
wherein the beveled edge side of the lip and/or the beveled edge of
the mating holder provide for the second uniform film thickness of
the second thin film stack; wherein the holder opening and the
mating holder opening are the same or different; and wherein the
beveled edge side of the lip of the mating holder is the same or
different as the beveled edge side of the lip of the holder.
7. The system of claim 6, wherein the holder and the mating holder
are configured to spatially rotate the secured substrate to provide
for the deposition plume traveling towards the second deposition
side of the substrate at a direction substantially perpendicular to
the substantially flat side of the lip of the mating holder and/or
to the second deposition side of the substrate; wherein the beveled
edge side of the lip of the mating holder faces the deposition
plume; and wherein the beveled edge of the mating holder and/or the
beveled edge side of the lip of the mating holder are characterized
by a geometry effective for minimizing edge effects of a given
deposition plume spatial profile.
8. The system of claim 5, wherein each of the first thin film stack
and the second thin film stack independently comprise from about 2
to about 50 layers; wherein each layer of the first thin film stack
and/or the second thin film stack is independently characterized by
a thickness of from about 0.5 nm to about 2 .mu.m; wherein each of
the first thin film stack and/or the second thin film stack is
independently characterized by a thickness of from about 1 nm to
about 10 .mu.m; and wherein any two adjacent layers of the first
thin film stack and/or the second thin film stack are characterized
by a different refraction index from each other.
9. The system of claim 5, wherein the substrate comprises an
optically transparent material, glass, optically transparent glass,
silica, sapphire, silicon, germanium, zinc selenide, zinc sulfide,
polycarbonate, polymethylmethacrylate (PMMA), polyvinylchloride
(PVC), diamond, ceramics, or combinations thereof; and wherein each
layer of the first thin film stack and/or the second thin film
stack independently comprises silicon (Si), niobium (Nb), germanium
(Ge), binary oxides, quartz, silica (SiO.sub.2), niobia
(Nb.sub.2O.sub.5), germania (GeO.sub.2), magnesium fluoride
(MgF.sub.2), titania (TiO.sub.2), alumina (Al.sub.2O.sub.3),
hafnium dioxide (HfO.sub.2), ternary oxides, or combinations
thereof.
10. The system of claim 1, wherein the holder comprises a plurality
of holder openings; wherein the plurality of holder openings
provides for the deposition of a thin film stack on a plurality of
substrates; and wherein each holder opening is configured to allow
for the deposition of a thin film stack on an individual
substrate.
11. A method for making a thin film optical element comprising: (a)
placing a substrate in a holder socket of a holder; wherein the
substrate has a first deposition side; wherein the holder comprises
at least one holder opening; wherein the holder has a holder outer
side and a holder inner side; wherein the holder outer side has at
least one beveled edge extending into a lip; wherein the beveled
edge and the lip define the at least one holder opening; wherein
the lip has a substantially flat side and a beveled edge side;
wherein the beveled edge and/or the beveled edge side of the lip
form an angle of less than about 45.degree. with the substantially
flat side of the lip and/or the first deposition side; wherein the
substantially flat side of the lip and the holder inner side define
the holder socket; and (b) depositing, with a deposition plume, a
first thin film stack on a first deposition side of the substrate
to form a thin film optical element, wherein the thin film optical
element comprises the substrate and the first thin film stack
deposited on the first deposition side of the substrate; wherein
the first thin film stack comprises two or more film layers;
wherein the first thin film stack is characterized by a first
uniform film thickness; and wherein the first uniform film
thickness is defined as a thickness variation of less than about
.+-.5% in any 10 mm.sup.2 of the first thin film stack, when
compared to an average first thin film stack thickness across the
entire first thin film stack; wherein a portion of the first
deposition side of the substrate contacts the substantially flat
side of the lip; wherein the holder opening exposes the first
deposition side of the substrate to the deposition plume; wherein
the beveled edge side of the lip and/or the beveled edge provide
for the first uniform film thickness of the first thin film stack;
wherein the deposition plume travels towards the first deposition
side of the substrate at a direction substantially perpendicular to
the substantially flat side of the lip and/or to the first
deposition side; and wherein the beveled edge side of the lip faces
the deposition plume.
12. The method of claim 11 further excluding modifying the size of
the thin film optical element; wherein the substrate is sized to a
target size prior to depositing the first thin film stack.
13. The method of claim 11, wherein a deposition plume spatial
profile is tuned in accordance with the geometry of the beveled
edge and/or the geometry of the beveled edge side of the lip to
provide for minimizing edge effects during depositing the first
thin film stack.
14. The method of claim 13, wherein the deposition plume spatial
profile is tuned by focusing the deposition plume; by masking the
deposition plume; or both by focusing the deposition plume and by
masking the deposition plume.
15. The method of claim 11, wherein the substrate has a second
deposition side spatially opposed to the first deposition side.
16. The method of claim 15 further comprising (A) inverting the
substrate in the holder socket subsequent to depositing the first
thin film stack; wherein the holder opening exposes the second
deposition side of the substrate to the deposition plume; and
wherein a portion of the second deposition side of the substrate
contacts the substantially flat side of the lip; and (B)
depositing, with the deposition plume, a second thin film stack on
the second deposition side of the substrate; wherein the thin film
optical element further comprises the second thin film stack
deposited on the second deposition side of the substrate.
17. The method of claim 15, wherein a mating holder contacts the
holder and the substrate; wherein the mating holder provides for
securing the substrate in place for depositing a thin film stack on
the substrate; wherein the mating holder comprises at least one
mating holder opening; wherein the mating holder has a mating
holder outer side and a mating holder inner side; wherein the
mating holder inner side contacts the holder inner side; wherein
the mating holder outer side has at least one beveled edge
extending into a lip; wherein the beveled edge and the lip of the
mating holder define the at least one mating holder opening;
wherein the lip of the mating holder has a substantially flat side
and a beveled edge side; wherein the beveled edge and/or the
beveled edge side of the lip of the mating holder form an angle of
less than about 45.degree. with the substantially flat side of the
lip of the mating holder and/or the second deposition side; wherein
the substantially flat side of the lip of the mating holder and the
mating holder inner side define a mating holder socket; wherein the
mating holder receives the substrate in the mating holder socket;
wherein a portion of the second deposition side of the substrate
contacts the substantially flat side of the lip of the mating
holder; wherein the holder opening and the mating holder opening
are the same or different; and wherein the beveled edge side of the
lip of the mating holder is the same or different as the beveled
edge side of the lip of the holder.
18. The method of claim 17 further comprising (i) inverting the
substrate secured in the holder and the mating holder subsequent to
depositing the first thin film stack; and (ii) depositing, with the
deposition plume, a second thin film stack on the second deposition
side of the substrate, wherein the thin film optical element
further comprises the second thin film stack deposited on the
second deposition side of the substrate; wherein the second thin
film stack comprises two or more film layers; wherein the second
thin film stack is characterized by a second uniform film
thickness; wherein the second uniform film thickness is defined as
a thickness variation of less than about +5% in any 10 mm.sup.2 of
the second thin film stack, when compared to an average second thin
film stack thickness across the entire second thin film stack;
wherein the mating holder opening exposes the second deposition
side of the substrate to the deposition plume; wherein the beveled
edge of the lip of the mating holder opening faces the deposition
plume; and wherein the beveled edge side of the lip and/or the
beveled edge of the mating holder provide for the second uniform
film thickness of the second thin film stack.
19. The method of claim 18, wherein the thin film optical element
is subjected to quality control analysis, wherein the quality
control analysis comprises at least one analytical technique
selected from the group consisting of ellipsometry, reflectance
spectroscopy, transmission spectroscopy, and combinations
thereof.
20. The method of claim 11, wherein the thin film optical element
is an integrated computational element (ICE); wherein the ICE is
employed in an optical computing device; and wherein the optical
computing device is further employed in a downhole tool in a
wellbore penetrating a subterranean formation.
21. A holder system for making a thin film optical element
comprising: a holder outer side comprising at least one beveled
edge extending into a lip comprising a substantially flat side and
a beveled edge side, wherein the beveled edge and/or the beveled
edge side of the lip form an angle of less than about 45.degree.
with the substantially flat side of the lip; at least one holder
opening defined by the beveled edge and the lip; a holder inner
side; and a holder socket defined by the substantially flat side of
the lip and the holder inner side, wherein the holder is configured
to receive a substrate in the holder socket, and wherein the holder
opening is configured to expose a first deposition side of the
substrate to a deposition plume.
Description
BACKGROUND
[0001] This disclosure relates to methods of making thin film
optical elements. More specifically, it relates to methods of
fabricating customized thin film optical elements that do not
require a size adjustment prior to employing in an opticoanalytical
device.
[0002] Optical computing devices, also commonly referred to as
opticoanalytical devices, can be used to analyze and monitor a
sample substance in real time. Optical computing devices may employ
optical processing elements, such as integrated computational
elements (ICEs), which may also be referred to as ICE cores. An ICE
can be an optical substrate with multiple stacked dielectric layers
(e.g., from about 2 to about 50 layers), each layer having a
different complex refractive index from its adjacent layers. The
specific number of layers, N, the optical properties (e.g. real and
imaginary components of complex indices of refraction) of the
layers, the optical properties of the substrate, and the physical
thickness of each of the layers that compose the ICE can be
selected so that the light processed by the ICE is related to one
or more characteristics of the sample. Because ICEs extract
information from the light modified by a sample passively, ICEs can
be incorporated in low cost and rugged optical analysis tools.
Hence, ICE-based downhole optical analysis tools can provide a
relatively low cost, rugged and accurate system for monitoring
quality of wellbore fluids, for instance.
[0003] However, errors in fabrication of the constituent layers of
an ICE can negatively impact the performance of the ICE. In most
cases, fairly small deviations (e.g., <0.1%) from point by point
design values of complex indices of refraction, and/or thicknesses
of the formed layers of the ICE can substantially impact the ICE's
performance, in some cases to such an extent, that the ICE becomes
operationally useless. Ultra-high accuracies required by ICE
designs challenge the state of the art in thin film deposition
techniques.
[0004] Generally, thin film fabrication techniques for optics are
applied to bulk systems, wherein a large number of identical
optical elements are fabricated on the same large substrate and are
subsequently sized (e.g., cored) into smaller optical elements of
desirable shapes. The elements are usually fabricated on large
substrates in thin film deposition systems, which may either employ
physical vapor deposition techniques or chemical vapor deposition
techniques. Unique challenges occur when trying to fabricate a
small number of customized thin film optical elements. For physical
vapor deposition methods (e.g., ion-assisted E-beam deposition),
challenges include the difficulty associated with fixating the
substrates with respect to the deposition plume. Securing the
substrates typically involves resting the substrate on a beveled
lip machined out of a platter and held in place by gravity. Other
options to secure the substrates (including vacuum, magnetic,
electrostatic, and mechanical/compression) are not viable due to
the pre-requisites of the environment within the deposition
chamber. These challenges are exacerbated when trying to fabricate
small elements on substrates of less than about 0.5 inches, wherein
quality control becomes difficult and must be applied to each
element. Thus, an ongoing need exists for fabricating multi-layer
thin optical elements that do not require a size adjustment
subsequent to depositing the multi-layers on a substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] For a more complete understanding of the present disclosure
and the advantages thereof, reference is now made to the following
brief description, taken in connection with the accompanying
drawings and detailed description, wherein like reference numerals
represent like parts.
[0006] FIG. 1 displays a schematic of a substrate holder.
[0007] FIG. 2 displays a schematic of a system for making a thin
film optical element.
[0008] FIG. 3 displays a schematic of another system for making a
thin film optical element.
[0009] FIG. 4 displays a schematic of yet another system for making
a thin film optical element.
[0010] FIGS. 5A, 5B, and 5C display schematics of different
substrate geometries.
[0011] FIG. 6 illustrates a flow diagram of a method for making a
thin film optical element.
DETAILED DESCRIPTION
[0012] It should be understood at the outset that although an
illustrative implementation of one or more embodiments are provided
below, the disclosed systems and/or methods may be implemented
using any number of techniques, whether currently known or in
existence. The disclosure should in no way be limited to the
illustrative implementations, drawings, and techniques below,
including the exemplary designs and implementations illustrated and
described herein, but may be modified within the scope of the
appended claims along with their full scope of equivalents.
[0013] In the drawings and description that follow, like parts are
typically marked throughout the specification and drawings with the
same reference numerals, respectively. In addition, similar
reference numerals may refer to similar components in different
embodiments disclosed herein. The drawing figures are not
necessarily to scale. Certain features of the disclosed embodiments
may be shown exaggerated in scale or in somewhat schematic form and
some details of conventional elements may not be shown in the
interest of clarity and conciseness. The present disclosure is
susceptible to embodiments of different forms. Specific embodiments
are described in detail and are shown in the drawings, with the
understanding that the present disclosure is not intended to be
limited to the embodiments illustrated and described herein. It is
to be fully recognized that the different teachings of the
embodiments discussed herein may be employed separately or in any
suitable combination to produce desired results.
[0014] Disclosed herein are systems for making thin film optical
elements. In an embodiment, a system for making a thin film optical
element can comprise (i) a thin film optical element comprising a
substrate and a first thin film stack, wherein the first thin film
stack is deposited on a first deposition side of the substrate;
wherein the first thin film stack comprises two or more film
layers; wherein the first thin film stack is characterized by a
first uniform film thickness; and wherein the first uniform film
thickness is defined as a thickness variation of less than about
+5% in any 10 mm.sup.2 of the first thin film stack, when compared
to an average first thin film stack thickness across the entire
first thin film stack; (ii) a holder comprising at least one holder
opening; wherein the holder has a holder outer side and a holder
inner side; wherein the holder outer side has at least one beveled
edge extending into a lip; wherein the beveled edge and the lip
define the at least one holder opening; wherein the lip has a
substantially flat side and a beveled edge side; wherein the
beveled edge and/or the beveled edge side of the lip form an angle
of less than about 45.degree. with the substantially flat side of
the lip and/or the first deposition side; wherein the substantially
flat side of the lip and the holder inner side define a holder
socket; wherein the holder is configured to receive the substrate
in the holder socket; wherein the holder opening is configured to
expose the first deposition side of the substrate to a deposition
plume; wherein a portion of the first deposition side of the
substrate contacts the substantially flat side of the lip, thereby
allowing for the first thin film stack to be deposited on the first
deposition side of the substrate; and wherein the beveled edge side
of the lip and/or the beveled edge provide for the first uniform
film thickness of the first thin film stack; and (iii) a deposition
source configured to provide the deposition plume for depositing
the first thin film stack on the first deposition side of the
substrate; wherein the deposition plume travels towards the first
deposition side of the substrate at a direction substantially
perpendicular to the substantially flat side of the lip and/or to
the first deposition side of the substrate; and wherein the beveled
edge side of the lip faces the deposition plume.
[0015] Further disclosed herein are methods of making thin film
optical elements. In an embodiment, a method of making a thin film
optical element can comprise (a) placing a substrate in a holder
socket of a holder as disclosed herein; and (b) depositing, with a
deposition plume, a first thin film stack on a first deposition
side of the substrate to form a thin film optical element, wherein
the thin film optical element comprises the substrate and the first
thin film stack deposited on the first deposition side of the
substrate; wherein the first thin film stack comprises two or more
film layers; wherein the first thin film stack is characterized by
a first uniform film thickness; and wherein the first uniform film
thickness is defined as a thickness variation of less than about
+5% in any 10 mm.sup.2 of the first thin film stack, when compared
to an average first thin film stack thickness across the entire
first thin film stack. In such embodiment, the method of making a
thin film optical element can further exclude modifying the size of
the thin film optical element. For example, the substrate can be
sized to a target size prior to depositing the first thin film
stack on the substrate.
[0016] In some embodiments, for example as depicted in FIGS. 1-4, a
holder 100 as disclosed herein can comprise at least one holder
opening 110. FIG. 1 displays a schematic of a holder 100. FIGS. 2,
3, and 4 display schematics of systems 200, 300, and 400,
respectively for making a thin film optical element 205. FIGS. 5A,
5B, and 5C display schematics of different geometries for substrate
100. Referring to FIG. 6, a method 2000 of making a thin film
optical element is illustrated.
[0017] In an embodiment, a method 2000 of making a thin film
optical element as disclosed herein can comprise placing 2100 a
substrate 210 in a holder socket 150 of a holder 100.
[0018] In some embodiments, the holder 100 may comprise a plurality
of holder openings 110. The holder 100 may comprise from about 1 to
about 100, alternatively from about 2 to about 75, or alternatively
from about 5 to about 75 holder openings 110, wherein each holder
opening 110 is configured to receive a single substrate 210. The
number of holder openings 110 in the holder 100 dictates the number
of substrates 210 that can be used for making thin film optical
elements concurrently. For example, when a holder 100 has 15 holder
openings 110, the holder 100 can receive at least 1 and up to and
including 15 substrates 210 for making at least 1 and up to and
including 15 thin film optical elements concurrently; although any
suitable number of substrates 210 equal to or less than 15 can be
used in this case for making equal to or less than 15 thin film
optical elements concurrently.
[0019] In an embodiment, the holder 100 comprises a plurality of
holder openings 110; wherein the plurality of holder openings 110
provides for the deposition of a thin film stack on a plurality of
substrates 210; and wherein each holder opening 110 is configured
to allow for the deposition of a thin film stack on an individual
substrate 210.
[0020] The holder opening 110 can have any suitable geometry. For
example, the holder opening 110 can be circular. As another
example, the holder opening 110 can be elliptical. As yet another
example, the holder opening 110 can be characterized by irregular
geometry. In some embodiments, all holder openings 110 of the same
holder 100 can have the same geometry (e.g., all holder openings
110 of the same holder 100 can be circular; all holder openings 110
of the same holder 100 can be elliptical; all holder openings 110
of the same holder 100 can be characterized by irregular geometry;
etc.). In other embodiments, the holder openings 110 of the same
holder 100 can have dissimilar geometry. For example, a portion of
the holder openings 110 of the holder 100 can be circular, while
another portion of the holder openings 110 of the same holder 100
can be elliptical, and while yet while another portion of the
holder openings 110 of the same holder 100 can be characterized by
irregular geometry; thereby allowing for substrates 210 of varying
geometries to be formed into thin film optical elements
concurrently.
[0021] In some embodiments, for example as depicted in FIG. 1, a
holder 100 as disclosed herein can have a holder outer side 102 and
a holder inner side 104; wherein the holder outer side 102 has at
least one beveled edge 140 extending into a lip 130; and wherein
the beveled edge 140 and the lip 130 define the at least one holder
opening 110. As will be appreciated by one of skill in the art, and
with the help of this disclosure, each holder opening 110 of the
holder 100 is individually defined by a beveled edge 140 and by a
lip 130. In other words, the holder 100 has, on the holder outer
side 102, an individual beveled edge 140 extending into a lip 130
for each individual holder opening 110.
[0022] The lip 130 can have a substantially flat side 131 and a
beveled edge side 132. The substantially flat side 131 of the lip
130 faces about the same direction as the holder inner side 104.
The beveled edge side 132 faces about the same direction as the
beveled edge 140. In an embodiment, the beveled edge 140 and/or the
beveled edge side 132 form an angle 135 of less than about
45.degree., alternatively less than about 40.degree., alternatively
less than about 35.degree., alternatively less than about
30.degree., alternatively less than about 25.degree., alternatively
less than about 20.degree., or alternatively less than about
15.degree. with the substantially flat side 131 of the lip 130.
[0023] The lip 130 is characterized by a terminal edge 136 that
further defines the holder opening 110. In some embodiments, the
terminal edge 136 can be a sharp terminal edge 145, for example as
depicted in FIGS. 1 and 3. In other embodiments, the terminal edge
136 can be a blunted terminal edge 240, for example as depicted in
FIG. 2. The blunted terminal edge may be provided for safety and/or
convenience. In yet other embodiments, the terminal edge 136 can be
a deflecting terminal edge 440, for example as depicted in FIG. 4.
The shape of the terminal edge 136 can influence the uniformity of
the film or film stack deposited on the substrate 210, as will be
described in more detail later herein.
[0024] In some embodiments, all terminal edges 136 within the same
holder 100 can have the same geometry (e.g., all terminal edges 136
within the same holder 100 can be sharp; all terminal edges 136
within the same holder 100 can be blunted; all terminal edges 136
within the same holder 100 can be deflecting; etc.). In other
embodiments, the terminal edges 136 within the same holder 100 can
have dissimilar geometry. For example, a portion of the terminal
edges 136 within the holder 100 can be sharp, while another portion
of the terminal edges 136 within the same holder 100 can be
blunted, and while yet while another portion of the terminal edges
136 within the same holder 100 can be deflecting; thereby allowing
for tuning the deposition of the film and/or film stack on the
substrate 210.
[0025] The substantially flat side 131 of the lip 130 and the
holder inner side 104 define a holder socket 150, for example as
depicted in FIGS. 1-4, wherein the holder 100 is configured to
receive the substrate 210 in the holder socket 150. As will be
appreciated by one of skill in the art, and with the help of this
disclosure, each holder 100 has the same number of holder openings
110 and holder sockets 150, wherein each holder opening 110 has a
corresponding holder socket 150 that receives each substrate 210.
For example, when a holder 100 has 21 holder openings 110, the same
holder 100 also has 21 holder sockets 150 that are available to
receive up to and including 21 individual substrates 210 for making
up to and including 21 thin film optical elements concurrently.
[0026] In some embodiments, the substantially flat side 131 of the
lip 130 can be characterized by a dimension (d) of less than about
10 mm, alternatively less than about 5 mm, alternatively less than
about 5 mm, alternatively less than about 4 mm, alternatively less
than about 3 mm, alternatively less than about 2 mm, alternatively
less than about 1 mm, alternatively less than about 0.9 mm,
alternatively less than about 0.8 mm, alternatively less than about
0.7 mm, alternatively less than about 0.6 mm, or alternatively less
than about 0.5 mm. For purposes of the disclosure herein, the
dimension (d) of the substantially flat side 131 of the lip 130
refers to the shortest distance between the terminal edge 136 and
an inner wall 151 of the holder socket 150.
[0027] In some embodiments, the lip 130 can further comprise one or
more locating holes 138, for example as depicted in FIG. 3. The lip
130 can comprise any suitable distinctive marking device (e.g.,
locating hole 138, a marking pin, etc.) that can mark the substrate
210 on its margin. For example, marking the substrate can enable
visually identifying a coated side of the substrate (e.g., to
prevent depositing a film or film stack on the top of another film
stack, as opposed to depositing a film or film stack on the other
side of the substrate).
[0028] The holder 100 can be made from any suitable material, for
example steel, stainless steel, etc.
[0029] In some embodiments, for example as depicted in FIGS. 2-4,
the holder 100 can receive the substrate 210 in the holder socket
150. The substrate 210 can have a first deposition side 220,
wherein the holder opening 110 is configured to expose the first
deposition side 220 of the substrate 210 to a deposition plume 250,
433, 435; wherein a portion of the first deposition side 220 of the
substrate 210 contacts (e.g., rests on) the substantially flat side
131 of the lip 130, thereby allowing for a first thin film stack
230 to be deposited by the deposition plume 250, 433, 435 on the
first deposition side 220 of the substrate 210. The substrate 210
can have a second deposition side 225 spatially opposed to the
first deposition side 220.
[0030] In an embodiment, the substrate 210 comprises an optically
transparent material. Generally, a transparent or optically
transparent material allows light to pass through the material
without being scattered. Typically, transparency can be assessed
visually, or by optical microscopy. Nonlimiting examples of
optically transparent materials suitable for use in the present
disclosure in the substrate 210 include glass, optically
transparent glass, silica, sapphire, silicon, germanium, zinc
selenide, zinc sulfide, polycarbonate, polymethylmethacrylate
(PMMA), polyvinylchloride (PVC), diamond, ceramics, and the like,
or combinations thereof. Further, and as will be appreciated by one
of skill in the art, and with the help of this disclosure, the
material that the substrate is made of can withstand film
deposition conditions, such as elevated temperatures, vacuum,
etc.
[0031] The substrate 210 can have any suitable geometry. Generally,
the geometry of the substrate 110 (i.e., holder socket 150) matches
the geometry of the substrate 210. In an embodiment, the substrate
210 can be sized to a desired shape and size (e.g., target shape
and/or target size) prior to placing the substrate 210 in the
holder socket 150 of the holder 100 (i.e., prior to depositing a
film or film stack on the substrate 210). The substrate 210 can be
sized to a desired shape and size by using any suitable methodology
such as coring, cutting, cleaving, grinding, polishing, and the
like, or combinations thereof.
[0032] In some embodiments, the first deposition side 220 and the
second deposition side 225 of the substrate 210 are substantially
parallel to each other. For example, the substrate 210 can be a
cylinder (e.g., circular cylinder, elliptical cylinder, circular
disc, elliptical disc, etc.). In such embodiments, the first
deposition side 220 and the second deposition side 225 can be the
same (e.g., can have the same size and shape).
[0033] In other embodiments, the first deposition side 220 and the
second deposition side 225 of the substrate 210 are not parallel to
each other. In such embodiments, the first deposition side 220 and
the second deposition side 225 can be different (e.g., can have
different size and/or shape).
[0034] The size of the first deposition side 220 and/or the second
deposition side 225 of the substrate 210 can be less than about 0.5
inches (12.7 mm), alternatively less than about 0.25 inches (6.4
mm), or alternatively less than about 0.1 inches (2.5 mm). For
purposes of the disclosure herein, the size of the first deposition
side 220 and/or the second deposition side 225 of the substrate 210
refers to the longest dimension of the first deposition side 220
and/or the second deposition side 225, respectively. For example,
when the first deposition side 220 and/or the second deposition
side 225 are circular, the size of the first deposition side 220
and/or the second deposition side 225 refers to the diameter of the
first deposition side 220 and/or the second deposition side 225,
respectively. As another example, when the first deposition side
220 and/or the second deposition side 225 are elliptical, the size
of the first deposition side 220 and/or the second deposition side
225 refers to the diameter along the major axis (e.g., the length
of the major axis) of the first deposition side 220 and/or the
second deposition side 225, respectively.
[0035] In some embodiments, the first deposition side 220 and/or
the second deposition side 225 of the substrate 210 can be
substantially flat or planar. In such embodiments, the first
deposition side 220 and/or the second deposition side 225 of the
substrate 210 can be substantially parallel to the substantially
flat side 131 of the lip 130. When a mating holder 301 is employed,
as will be described in more detail later herein, the first
deposition side 220 and/or the second deposition side 225 of the
substrate 210 can be substantially parallel to a substantially flat
side 331 of a lip 330 of the mating holder 301.
[0036] In other embodiments, the first deposition side 220 and/or
the second deposition side 225 of the substrate 210 can be rugged
(as opposed to flat).
[0037] In some embodiments, the first deposition side 220 and/or
the second deposition side 225 can be circular 510, for example as
depicted in FIG. 5A. The cross-section of the substrate depicted in
FIG. 5A indicates that the diameter (D) is regular (D1=D2).
[0038] In other embodiments, the first deposition side 220 and/or
the second deposition side 225 can be elliptical 520, for example
as depicted in FIG. 5B. The cross-section of the substrate depicted
in FIG. 5B indicates that the diameter (D) varies across the
cross-section (D1.noteq.D2).
[0039] In yet other embodiments, the first deposition side 220
and/or the second deposition side 225 can be characterized by
irregular geometry 530, for example as depicted in FIG. 5C. The
cross-section of the substrate depicted in FIG. 5C indicates that
the diameter (D) varies across the cross-section
(D1.noteq.D2.noteq.Di.noteq.D1).
[0040] In some embodiments, a distance between the first deposition
side 220 and the second deposition side 225 of the substrate 210
can be less than the size of the first deposition side 220 and/or
the size of the second deposition side 225. For example, in the
case of a circular cylindrical substrate, the height of the
cylinder is less than the diameter of the cross-section of the
cylinder; wherein the substrate 210 is a disc.
[0041] In other embodiments, a distance between the first
deposition side 220 and the second deposition side 225 of the
substrate 210 can be equal to or greater than the size of the first
deposition side 220 and/or the size of the second deposition side
225. For example, in the case of a circular cylindrical substrate,
the height of the cylinder is equal to or greater than the diameter
of the cross-section of the cylinder.
[0042] In some embodiments, for example as depicted in FIG. 3, a
mating holder 301 can be placed on the substrate 210 and holder
100, wherein the mating holder 301 contacts the substrate 210 and
the holder 100.
[0043] The mating holder 301 can help secure the substrate 100 in
place for film deposition. For example, the mating holder 301 can
provide for securing the substrate 210 in place for the deposition
of a first thin film stack 230 on the first deposition side 220 of
the substrate 210, the deposition of the second thin film stack 231
on the second deposition side 225 of the substrate 210, or both the
deposition of the first thin film stack 230 on the first deposition
side 220 of the substrate 210 and the deposition of the second thin
film stack 231 on the second deposition side 225 of the substrate
210.
[0044] Further, the mating holder 301 can provide for spatially
rotating (e.g., flipping, inverting, etc.) the substrate 210 such
that the desired deposition side faces the deposition plume. For
example, the holder 100 and the mating holder 301 can be configured
to spatially rotate the secured substrate 210 to provide for the
deposition plume 250, 433, 435 traveling towards the first
deposition side 220 or the second deposition side 225 of the
substrate 210 (as desired) at a direction substantially
perpendicular to the first deposition side 220 or the second
deposition side 225, respectively.
[0045] In some embodiments, the holder 100 and the mating holder
301 can be the same (e.g., can have the same size and shape). In
other embodiments, the holder 100 and the mating holder 301 can be
different (e.g., can have different size and/or shape).
[0046] The mating holder 301 comprises at least one mating holder
opening 310. In some embodiments, the mating holder 301 may
comprise a plurality of mating holder opening 310. The mating
holder 301 may comprise from about 1 to about 100, alternatively
from about 2 to about 75, or alternatively from about 5 to about 75
mating holder opening 310, wherein each mating holder opening 310
is configured to receive a single substrate 210. The number of
mating holder openings 310 in the mating holder 301 matches the
number of holder openings 110 in the holder 100.
[0047] In an embodiment, the mating holder 301 comprises a
plurality of mating holder openings 310; wherein the plurality of
mating holder openings 310 provides for the deposition of a thin
film stack on a plurality of substrates 210; and wherein each
mating holder opening 310 is configured to allow for the deposition
of a thin film stack on an individual substrate 210.
[0048] The mating holder 301 has a mating holder outer side 302 and
a mating holder inner side 304; wherein the mating holder inner
side 304 contacts the holder inner side 104; wherein the mating
holder outer side 302 has at least one beveled edge 340 extending
into a lip 330; wherein the beveled edge 340 and the lip 330 define
the at least one mating holder opening 310; wherein the lip 330 has
a substantially flat side 331 and a beveled edge side 332; wherein
the beveled edge 340 and/or the beveled edge side 332 form an angle
335 of less than about 45.degree., alternatively less than about
40.degree., alternatively less than about 35.degree., alternatively
less than about 30.degree., alternatively less than about
25.degree., alternatively less than about 20.degree., or
alternatively less than about 15.degree. with the substantially
flat side 331 of the lip 330 and/or the second deposition side
225.
[0049] The lip 330 is characterized by a terminal edge that further
defines the mating holder opening 310. In some embodiments, the
terminal edge of the lip 330 can be a sharp terminal edge 345, for
example as depicted in FIG. 3. In other embodiments, the terminal
edge of the lip 330 can be a blunted terminal edge. In yet other
embodiments, the terminal edge of the lip 330 can be a deflecting
terminal edge. The shape of the terminal edge of the lip 330 can
influence the uniformity of the film or film stack deposited on the
substrate 210, as will be described in more detail later
herein.
[0050] In some embodiments, all terminal edges within the same
mating holder 301 can have the same geometry (e.g., all terminal
edges within the same mating holder 301 can be sharp; all terminal
edges within the same mating holder 301 can be blunted; all
terminal edges within the same mating holder 301 can be deflecting;
etc.). In other embodiments, the terminal edges within the same
mating holder 301 can have dissimilar geometry. For example, a
portion of the terminal edges within the mating holder 301 can be
sharp, while another portion of the terminal edges within the same
mating holder 301 can be blunted, and while yet while another
portion of the terminal edges within the same mating holder 301 can
be deflecting; thereby allowing for tuning the deposition of the
film and/or film stack on the substrate 210.
[0051] The substantially flat side 331 of the lip 330 and the
mating holder inner side 304 define a mating holder socket 350;
wherein the mating holder 301 is configured to receive the
substrate 210 in the mating holder socket 350; wherein the mating
holder opening 310 is configured to expose the second deposition
side 225 of the substrate 210 to the deposition plume 250, 433,
435; and wherein a portion of the second deposition side 225 of the
substrate 210 contacts the substantially flat side 331 of the lip
330, thereby allowing for the second thin film stack 231 to be
deposited on the second deposition side 225 of the substrate
210.
[0052] As will be appreciated by one of skill in the art, and with
the help of this disclosure, when a mating holder is not present or
used, the substrate 210 can be secured by any suitable method in
the holder 100 (e.g., the substrate 210 can be clamped in the
holder 100).
[0053] In an embodiment, a method 2000 of making a thin film
optical element as disclosed herein can comprise depositing 2200,
with a deposition plume 250, 433, 435, a first thin film stack 230
on the first deposition side 220 of the substrate 210 to form a
thin film optical element 205, wherein the thin film optical
element 205 comprises the substrate 210 and the first thin film
stack 230 deposited on the first deposition side 220 of the
substrate 210. In such embodiment, the holder opening 110 exposes
the first deposition side 220 of the substrate 210 to the
deposition plume 250, 433, 435.
[0054] The deposition plume 250, 433, 435 can travel towards the
first deposition side 220 of the substrate 210 at a direction
substantially perpendicular to the substantially flat side 131 of
the lip 130 and/or to the first deposition side 220; wherein the
beveled edge side 132 of the lip 130 faces the deposition plume
250, 433, 435; and wherein the holder opening 110 exposes the first
deposition side 220 to the deposition plume 250, 433, 435.
[0055] In some embodiments, the method 2000 of making a thin film
optical element as disclosed herein can further comprise inverting
2300 the substrate 210 in the holder socket 150 subsequent to
depositing 2200 the first thin film stack 230; wherein the holder
opening 110 exposes the second deposition side 225 of the substrate
210 to the deposition plume 250, 433, 435 as disclosed herein.
[0056] The deposition plume 250, 433, 435 can travel towards the
second deposition side 225 of the substrate 210 at a direction
substantially perpendicular to the substantially flat side 131 of
the lip 130 and/or to the first deposition side 220; wherein the
beveled edge side 132 of the lip 130 faces the deposition plume
250, 433, 435; and wherein the holder opening 110 exposes the
second deposition side 225 to the deposition plume 250, 433,
435.
[0057] In other embodiments, the method 2000 of making a thin film
optical element as disclosed herein can further comprise inverting
2400 the substrate 210 secured in the holder 100 and the mating
holder 301 subsequent to depositing 2200 the first thin film stack
230; wherein the mating holder opening 310 exposes the second
deposition side 225 of the substrate 210 to the deposition plume
250, 433, 435 as disclosed herein.
[0058] The deposition plume 250, 433, 435 can travel towards the
second deposition side 225 of the substrate 210 at a direction
substantially perpendicular to the substantially flat side 331 of
the lip 330 and/or to the second deposition side 225; wherein the
beveled edge side 332 of the lip 330 faces the deposition plume
250, 433, 435; and wherein the holder opening 310 exposes the
second deposition side 225 to the deposition plume 250, 433,
435.
[0059] Generally, the substrate 210, holder 100, and optionally
mating holder 301, as well as a deposition source (and consequently
the deposition plume 250, 433, 435) are located inside a deposition
chamber. In an embodiment, the thin film stacks 230, 231 can be
deposited on the substrate by using any suitable methodology, such
as any suitable physical vapor deposition (PVD) or chemical vapor
deposition (CVD) technique. In the case of CVD techniques, the
material to be deposited reacts with a gaseous environment of
co-depositing material to form a film of a new material that
results from a chemical reaction (e.g., a nitride, an oxide, a
carbide, a carbonitride, etc.). Nonlimiting examples of CVD
techniques include atmospheric pressure CVD, metal-organic CVD, low
pressure CVD, laser CVD, photo-CVD, chemical vapor infiltration,
chemical beam epitaxy, plasma-assisted CVD, plasma-enhanced CVD,
and the like, or combinations thereof.
[0060] Generally, PVD refers to a collection of vaporization
coating techniques in which a material is atomically transferred
from solid phase (e.g., deposition source) to vapor phase (e.g.,
vapor of material to be deposited forming the deposition plume 250,
433, 435) and back to the solid phase (e.g., thin film), gradually
building a film on the surface to be coated (e.g., first deposition
side 220, second deposition side 225).
[0061] In PVD, the layers of the thin film stacks 230, 231 are
formed by condensation of vaporized material from the deposition
source, while maintaining a vacuum in the deposition chamber. An
example of a PVD technique is electron beam (E-beam) deposition, in
which a beam of high energy electrons (i.e., electron beam) is
electromagnetically focused onto the material(s) of the deposition
source(s), to evaporate atomic species. In some embodiments, E-beam
deposition can be assisted by ions, provided by ion-sources, to
clean or etch the substrate 210; and/or to increase the energy of
the evaporated material(s), such that the evaporated material(s) is
deposited onto the substrate 210 more densely, for example. Other
nonlimiting examples of PVD techniques that can be used to form the
thin film stacks 230, 231 include cathodic arc deposition (in which
an electric arc discharged at the material(s) of the deposition
source(s) blasts away some material(s) into ionized vapor to be
deposited onto the substrate 210); evaporative deposition (in which
material(s) included of the deposition source(s) is heated to a
high vapor pressure by electrically resistive heating); pulsed
laser deposition (in which a laser ablates material(s) from the
deposition source(s) into vapor phase); sputter deposition (in
which a glow plasma discharge--usually localized around the
deposition source(s) by a magnet--bombards the material(s) of the
source(s) sputtering some of the material(s) away as a vapor); and
the like; or combinations thereof.
[0062] In an embodiment, a method 2000 of making a thin film
optical element as disclosed herein excludes modifying the size of
the thin film optical element 205. The substrate 210 can be sized
to a target size and/or shape prior to depositing the thin film
stack 230, 231 on the substrate 210. The size of the first
deposition side 220 of the substrate 210 is not modified subsequent
to the first thin film stack 230 being deposited on the first
deposition side 220 of the substrate 210. Similarly, the size of
the second deposition side 225 of the substrate 210 is not modified
subsequent to the second thin film stack 231 being deposited on the
second deposition side 225 of the substrate 210.
[0063] In an embodiment, the first deposition side 220 and/or the
second deposition side 225 of the substrate 210 (e.g., the surface
of the first deposition side 220 and/or the second deposition side
225) can be processed or prepared prior to depositing the thin film
stack 230, 231 on the substrate 210. Preparing the first deposition
side 220 and/or the second deposition side 225 of the substrate 210
may include reducing the thickness of the substrate 210 until a
desired or predetermined thickness of the substrate 210 is
achieved. In some embodiments, the thickness of the substrate 210
may be reduced through chemical means, such as etching, oxidation,
etc. In other embodiments, the thickness of the substrate 210 may
be reduced through physical means, such as cutting, cleaving,
grinding, polishing, etc.
[0064] In some embodiments, the first deposition side 220 and/or
the second deposition side 225 of the substrate 210 may include
chemically treating the surface of the substrate 210 so that it
becomes more amenable or receptive to a particular thin film
deposition process. For example, some thin film deposition
techniques can be surface selective. In other words, some of the
materials used to build the layers of the thin film stack 230, 231
may not chemically bond or otherwise adhere to a given substrate
210 surface. To accommodate layer chemistries that may not directly
adhere to a given substrate 210, the surface of the substrate 210
may be coated or otherwise pre-treated with a reactive agent, such
as aluminum, titanium, silicon, germanium, indium, gallium,
arsenic, etc. Coating the surface of the substrate 210 with a
reactive agent may be done using any suitable sputtering
techniques. The reactive agent may then be reacted in order to
generate an oxide surface that may be more responsive to various
thin film deposition techniques. In other embodiments, the surface
of the substrate 210 may be treated with an oxidation product to
promote adherence of thin layers.
[0065] In an embodiment, a method 2000 of making a thin film
optical element as disclosed herein can comprise depositing 2500,
with a deposition plume 250, 433, 435, a second thin film stack 231
on the second deposition side 225 of the substrate 210 to form the
thin film optical element 205, wherein the thin film optical
element 205 comprises the substrate 210, the first thin film stack
230 deposited on the first deposition side 220 of the substrate
210, and the second thin film stack 231 deposited on the second
deposition side 225 of the substrate 210.
[0066] In some embodiments, the substrate 210 can be inverted 2300
(e.g., rotated, flipped, etc.) in the holder socket 150 subsequent
to depositing the first thin film stack 230; wherein the holder
opening 110 exposes the second deposition side 225 of the substrate
210 to the deposition plume 250, 433, 435; and wherein a portion of
the second deposition side 225 of the substrate 210 contacts the
substantially flat side 131 of the lip 130.
[0067] In embodiments where a mating holder 301 contacts the holder
100 and the substrate 210 and provides for securing the substrate
210 in place for thin film deposition as previously described
herein, the substrate 210 secured in the holder 100 and the mating
holder 301 can be inverted 2400 subsequent to depositing the first
thin film stack 230, wherein the mating holder opening 310 exposes
the second deposition side 225 of the substrate 210 to the
deposition plume 250, 433, 435. As will be appreciated by one of
skill in the art, and with the help of this disclosure, in such
embodiments, inverting the substrate 210 secured in the holder 100
and the mating holder 301 entails inverting the whole assembly
comprising the substrate 210, as well as the holder 100 and the
mating holder 301 that secure the substrate 210 in place for thin
film deposition.
[0068] In an embodiment, the thin film optical element 205 as
disclosed herein can comprise the substrate 210 and the first thin
film stack 230, wherein the first thin film stack 230 is deposited
on the first deposition side 220 of the substrate 210; wherein the
first thin film stack 230 comprises two or more film layers;
wherein the first thin film stack 230 is characterized by a first
uniform film thickness; and wherein the first uniform film
thickness is defined as a thickness variation of less than about
.+-.5%, alternatively less than about .+-.4%, alternatively less
than about .+-.3%, alternatively less than about .+-.2%,
alternatively less than about .+-.1%, alternatively less than about
.+-.0.5%, or alternatively less than about .+-.0.1% in any 10
mm.sup.2 of the first thin film stack 230, when compared to an
average first thin film stack thickness across the entire first
thin film stack 230. Film thickness and/or film thickness
uniformity (e.g., first film thickness, second film thickness,
first film thickness uniformity, second film thickness uniformity)
can be determined by using any suitable methodology, such as
ellipsometry, transmission spectroscopy, reflection spectroscopy,
thin film profilometry, x-ray reflectivity, cross-sectional
scanning electron microscopy, cross-sectional tunneling electron
microscopy, and the like, or combinations thereof.
[0069] In an embodiment, the thin film optical element 205 as
disclosed herein can further comprise a second thin film stack 231,
wherein the second thin film stack 231 is deposited on the second
deposition side 225 of the substrate 210; wherein the second thin
film stack 231 comprises two or more film layers; wherein the
second thin film stack 231 is characterized by a second uniform
film thickness; wherein the second uniform film thickness is
defined as a thickness variation of less than about .+-.5%,
alternatively less than about .+-.4%, alternatively less than about
.+-.3%, alternatively less than about .+-.2%, alternatively less
than about .+-.1%, alternatively less than about .+-.0.5%, or
alternatively less than about .+-.0.1% in any 10 mm.sup.2 of the
second thin film stack 231, when compared to an average second thin
film stack thickness across the entire second thin film stack
231.
[0070] In an embodiment, each of the first thin film stack 230
and/or the second thin film stack 231 can be independently
characterized by a thickness of from about 1 nm to about 10 .mu.m,
alternatively from about 50 nm to about 7.5 .mu.m, or alternatively
from about 100 nm to about 5 .mu.m.
[0071] In an embodiment, each of the first thin film stack 230 and
the second thin film stack 231 can independently comprise a
plurality of layers (e.g., thin film layers). For example, each of
the first thin film stack 230 and the second thin film stack 231
can independently comprise from about 2 to about 50 layers,
alternatively from about 5 to about 35 layers, or alternatively
from about 7 to about 25 layers.
[0072] In an embodiment, each layer of the first thin film stack
230 and/or the second thin film stack 231 can be independently
characterized by a thickness of from about 0.5 nm to about 2 .mu.m,
alternatively from about 0.75 nm to about 1.5 .mu.m, or
alternatively from about 1 nm to about 1 .mu.m. In some
embodiments, all layers of the first thin film stack 230 and/or the
second thin film stack 231 can have the same thickness. In other
embodiments, some layers of the first thin film stack 230 and/or
the second thin film stack 231 can have the same thickness, while
other layers of the first thin film stack 230 and/or the second
thin film stack 231 can have different thickness.
[0073] In an embodiment, each layer of the first thin film stack
230 and/or the second thin film stack 231 can independently
comprise silicon (Si), niobium (Nb), germanium (Ge), binary oxides,
quartz, silica (SiO.sub.2), niobia (Nb.sub.2O.sub.5), germania
(GeO.sub.2), magnesium fluoride (MgF.sub.2), titania (TiO.sub.2),
alumina (Al.sub.2O.sub.3), hafnium dioxide (HfO.sub.2), ternary
oxides, and the like, or combinations thereof.
[0074] In an embodiment, the initial or first layer deposited on
the first deposition side 220 and/or the second deposition side 225
of the substrate 210 may be made of a metal oxide material, such as
aluminum oxide (Al.sub.2O.sub.3), titanium dioxide (TiO.sub.2),
etc. As will be appreciated by one of skill in the art, and with
the help of this disclosure, the oxide material of the first layer
may prove advantageous in creating a good adhesion to the substrate
210, thereby protecting the thin films from inadvertent removal
from the substrate 210. In some embodiments, one or both of the
first and last layers of the first thin film stack 230 and/or the
second thin film stack 231 may be deposited to a thickness that is
greater than the other interposing layers (i.e., the layers
disposed between the first deposited layer and the last deposited
layer of a film stack; intermediate layers). As will be appreciated
by one of skill in the art, and with the help of this disclosure,
providing thicker first and/or last layers may provide increased
mechanical strength to the thin film optical element 205.
[0075] In an embodiment, any two adjacent layers of the first thin
film stack 230 and/or the second thin film stack 231 can be
characterized by a different refraction index from each other. The
thin film optical element 205 as disclosed herein can comprise a
plurality of thin film layers consisting of various materials whose
indices of refraction and size (e.g., thickness) may vary between
each layer. The thin film layers may be deposited on the substrate
so as to selectively pass predetermined fractions of
electromagnetic radiation at different wavelengths configured to
substantially mimic a regression vector corresponding to a
particular physical or chemical property of interest of a substance
of interest. In some embodiments, an individual thin film optical
element 205 as disclosed herein can exhibit a specific transmission
function that is tailored or weighted with respect to wavelength.
As a result, an output light intensity from an integrated
computational element (ICE) comprising the thin film optical
element 205 conveyed to a detector may be related to a physical or
chemical property of interest for the substance of interest.
[0076] As will be appreciated by one of skill in the art, and with
the help of this disclosure, errors in fabrication of the
constituent layers of a thin film optical element 205 can
negatively impact the performance of the thin film optical element
205. In some instances, deviations of <0.1%, and even 0.01% or
0.0001% from complex indices of refraction, and/or thicknesses of
the formed layers of the thin film optical element 205 can
substantially impact the performance of the thin film optical
element 205, in some cases to such an extent, that the thin film
optical element 205 may become operationally useless. Further, and
as will be appreciated by one of skill in the art, and with the
help of this disclosure, depositing uniform thickness layers that
lead to uniform thickness thin film stacks is important for the
performance of thin film optical element 205 as disclosed
herein.
[0077] In an embodiment, the beveled edge side 132 of the lip 130
and/or the beveled edge 140 can provide for the first uniform film
thickness of the first thin film stack 230 and/or the second
uniform film thickness of the second thin film stack 231. In an
embodiment, the beveled edge side 332 of the lip 330 and/or the
beveled edge 340 can provide for the second uniform film thickness
of the second thin film stack 231. The steep angle 135, 335 (e.g.,
low angle with respect to the holder inner side 104 and/or mating
holder inner side 304) provides for reducing or minimizing
shadowing effects and/or edge effects of the holder 100 and/or
mating holder 301 masking the deposition plume 250, 433, 435 near
the edges of the holder opening 110 and/or mating holder opening
310. If the angle 135, 335 would be greater than 45.degree., for
example a 90.degree. angle, the deposition plume would hit the edge
140, 340 of the holder/mating holder much sooner, by providing a
physical obstacle in the path of the deposition plume 250, 433,
435, which would lead to a shadowing effect and/or edge effect.
Generally, edge effects refer to the non-uniform film deposition
near the edges, e.g., non-uniform film deposition on the substrate
210 near the holder opening 110 and/or mating holder opening
310.
[0078] In an embodiment, the beveled edge 140 of the holder 100
and/or the beveled edge side 132 of the lip 130 of the holder 100
can be characterized by a geometry effective for minimizing edge
effects of a given deposition plume spatial profile. The value of
the angle 135 between (i) the substantially flat side 131 of the
lip 130, the first deposition side 220 of the substrate 210, the
second deposition side 225 of the substrate 210, or combinations
thereof, and (ii) the beveled edge side 132 of the lip 130 and/or
the beveled edge 140 of the holder 100 can be effective for
minimizing edge effects of a given deposition plume spatial
profile. For example, the angle 135 can be less than about
45.degree., alternatively less than about 40.degree., alternatively
less than about 35.degree., alternatively less than about
30.degree., alternatively less than about 25.degree., alternatively
less than about 20.degree., or alternatively less than about
15.degree..
[0079] In an embodiment, the beveled edge 340 of the mating holder
301 and/or the beveled edge side 332 of the lip 330 of the mating
holder 301 can be characterized by a geometry effective for
minimizing edge effects of a given deposition plume spatial
profile. The value of the angle 335 between (i) the substantially
flat side 331 of the lip 330 and/or the second deposition side 225
of the substrate 210, and (ii) the beveled edge side 332 of the lip
330 and/or the beveled edge 340 of the mating holder 301 can be
effective for minimizing edge effects of a given deposition plume
spatial profile. For example, the angle 335 can be less than about
45.degree., alternatively less than about 40.degree., alternatively
less than about 35.degree., alternatively less than about
30.degree., alternatively less than about 25.degree., alternatively
less than about 20.degree., or alternatively less than about
15.degree..
[0080] FIG. 4 illustrates the effects of various types of edges
outlining the holder opening 110 in the system 400 for making a
thin film optical element 205.
[0081] In the case of the deflecting terminal edge 440, the
deposition plume 433 provides for a well-directed coating material,
wherein the deflecting terminal edge 440 provides for a deflection
path 434 that deflects excess material away from the first
deposition side 220 of the substrate 210, thereby leading to a
tuned edge 450 of the first thin film stack 230, as well as an
uniform middle coating 460 of the first thin film stack 230.
[0082] In the case of the severely blunted edge 441, the deposition
plume 435 provides for a coating material that is less well
directed than the coating material near the deflecting terminal
edge 440, wherein the severely blunted edge 441 provides for a
deflection path 436 that deflects excess material towards the first
deposition side 220 of the substrate 210, thereby leading to an
increased edge deposition 470 which results in a non-uniform thin
film. As will be appreciated by one of skill in the art, and with
the help of this disclosure, increased edge deposition 470 is one
example of an edge effect during thin film deposition.
[0083] The deposition plume 250, 433, 435 can be tuned (e.g.,
adjusted, modulated, etc.) in accordance with the geometry of the
beveled edge bordering the holder opening 110 or the mating holder
opening 310. For example, a spatial profile of the deposition plume
250, 433, 435 can be tuned in accordance with the geometry of the
beveled edge 140 and/or the geometry of the beveled edge side 132
of the lip 130 to provide for minimizing edge effects during
depositing the first thin film stack 230 and/or the second thin
film stack 231. As another example, a spatial profile of the
deposition plume 250, 433, 435 can be tuned in accordance with the
geometry of the beveled edge 340 and/or the geometry of the beveled
edge side 332 of the lip 330 to provide for minimizing edge effects
during depositing the second thin film stack 231.
[0084] Without wishing to be limited by theory, a deposition plume
250, 433, 435 can be placed in a three-dimensional Cartesian
coordinate system having axes x, y, and z. For example, the
deposition plume 250, 433, 435 can display a spatial profile (i.e.,
a three-dimensional spatial profile) that has the same spatial
symmetry relative to both x and y axes; e.g., the spatial profile
of the deposition plume 250, 433, 435 can be a sphere (where the
deposition plume can be provided by a point-like deposition
source). As another example, when the deposition plume 250, 433,
435 is provided by an extended deposition source (as opposed to a
point-like deposition source), the deposition plume 250, 433, 435
can display a Lambertian (cosine emission) spatial profile
distribution. Other examples of spatial profiles of the deposition
plume 250, 433, 435 can include a parabolic profile and/or a
hyperbolic profile.
[0085] In some embodiments, the spatial profile of the deposition
plume 250, 433, 435 can be tuned by focusing the deposition plume
250, 433, 435; by masking the deposition plume 250, 433, 435; or
both by focusing the deposition plume 250, 433, 435 and by masking
the deposition plume 250, 433, 435. In such embodiments, an
electron beam (e.g., assisted ion beam) can contact a deposition
source as previously described herein to produce the deposition
plume 250, 433, 435; wherein the spatial profile of the deposition
plume 250, 433, 435 can be tuned by focusing the electron beam, by
masking the electron beam, or both by focusing the electron beam
and by masking the electron beam.
[0086] In an embodiment, a method 2000 of making a thin film
optical element as disclosed herein can comprise subjecting 2600
the thin film optical element 205 to quality control analysis,
wherein the quality control analysis comprises at least one
analytical technique selected from the group consisting of
ellipsometry, reflectance spectroscopy, transmission spectroscopy,
and combinations thereof. In embodiments where thin film stacks
230, 231 are deposited on both the first deposition side 220 and
the second deposition side 225 of the substrate 210, the thin film
optical element 205 may be subjected 2600 to quality control
analysis subsequent to depositing the first thin film stack 230 and
prior to depositing the second thin film stack 231, in order to
assess the quality of the first thin film stack 230. In such
embodiments, the thin film optical element 205 may be further
subjected 2600 to quality control analysis subsequent to depositing
the second thin film stack 231, in order to assess the quality of
the second thin film stack 231. In such embodiments, the quality of
the first thin film stack 230 may be reassessed subsequent to
depositing the second thin film stack 231.
[0087] In some embodiments, the thin film optical element 205 may
be subjected 2600 to quality control analysis subsequent to
depositing both the first thin film stack 230 and the second thin
film stack 231, in order to assess the quality of both the first
thin film stack 230 and the quality of the second thin film stack
231.
[0088] In an embodiment, the quality control analysis comprises
ellipsometry to assess film thickness and uniformity of the first
thin film stack 230 and/or the second thin film stack 231.
[0089] In an embodiment, the quality control analysis comprises
reflectance spectroscopy to assess a reflectance function of the
thin film optical element 205.
[0090] In an embodiment, the quality control analysis comprises
transmission spectroscopy to assess a transmission function of the
thin film optical element 205.
[0091] In some embodiments, the thin film optical element 205 can
be used as an integrated computational element (ICE). ICEs may
enable the measurement of various chemical or physical
characteristics of a substance through the use of regression
techniques. For purposes of the disclosure herein, the terms
"characteristic" or "characteristic of interest" refers to a
chemical, mechanical, or physical property of a substance or a
sample of the substance. The characteristic of a substance may
include a quantitative or qualitative value of one or more chemical
constituents or compounds present therein or any physical property
associated therewith. Such chemical constituents and compounds may
be referred to herein as "analytes." Nonlimiting examples of
characteristics of a substance that can be analyzed with the help
of the optical processing elements described herein (e.g., ICEs,
such as thin film optical elements 205) can include, for example,
chemical composition (e.g., identity and concentration in total or
of individual components), phase presence (e.g., gas, oil, water,
etc.), impurity content, pH, alkalinity, viscosity, density, ionic
strength, total dissolved solids, salt content (e.g., salinity),
porosity, opacity, bacteria content, total hardness, transmittance,
state of matter (e.g., solid, liquid, gas, emulsion, mixtures
thereof, etc.), and the like, or combinations thereof.
[0092] Further, for purposes of the disclosure herein, the term
"substance" refers to at least a portion of matter or material of
interest to be tested or otherwise evaluated with the help of the
optical processing elements described herein (e.g., ICEs, such as
thin film optical elements 205). The substance may be any fluid
capable of flowing, including particulate solids, liquids, gases
(e.g., air, nitrogen, carbon dioxide, argon, helium, methane,
ethane, butane, and other hydrocarbon gases, hydrogen sulfide, or
combinations thereof), slurries, emulsions, powders, muds, glasses,
mixtures, combinations thereof, and may include, but is not limited
to, aqueous fluids (e.g., water, brines, etc.), non-aqueous fluids
(e.g., organic compounds, hydrocarbons, oil, a refined component of
oil, petrochemical products, and the like), acids, surfactants,
biocides, bleaches, corrosion inhibitors, foamers, foaming agents,
breakers, scavengers, stabilizers, clarifiers, detergents,
treatment fluids, fracturing fluids, formation fluids, or any
oilfield fluid, chemical, or compound commonly found in the oil and
gas industry. The substance may also refer to solid materials such
as, but not limited to, rock formations, concrete, solid wellbore
surfaces, pipes or flow lines, and solid surfaces of any wellbore
tool or projectile (e.g., balls, darts, plugs, etc.).
[0093] Generally, information about a substance can be derived
through the interaction of light with that substance (e.g., optical
interaction); wherein such interaction can change characteristics
of the light, for instance the frequency (and corresponding
wavelength), intensity, polarization, and/or direction (e.g.,
through scattering, absorption, reflection or refraction).
Chemical, thermal, physical, mechanical, optical or various other
characteristics of the substance can be determined based on the
changes in the characteristics of the light interacting with the
substance. Thus, one or more characteristics of substances such as
crude petroleum, gas, water, or other wellbore fluids can be
assessed in-situ, e.g., downhole at well sites, as a result of the
interaction between these substances and light. For purposes of the
disclosure herein, the terms "optically interact" or "optical
interaction" refer to the reflection, transmission, scattering,
diffraction, or absorption of electromagnetic radiation either on,
through, or from an optical processing element (e.g., ICE, such as
a thin film optical element 205) or a substance being analyzed with
the help of the optical processing element. Accordingly, optically
interacted light refers to electromagnetic radiation that has been
reflected, transmitted, scattered, diffracted, or absorbed by,
emitted, or re-radiated, for example, using an optical processing
element, but may also apply to optical interaction with a
substance. Further, for purposes of the disclosure herein, the term
"electromagnetic radiation" refers to radio waves, microwave
radiation, terahertz radiation, infrared and near-infrared
radiation, visible light, ultraviolet light, X-ray radiation, gamma
ray radiation, and the like.
[0094] An ICE can selectively weight (when operated as part of an
optical analysis tool) light modified by a sample in at least a
portion of a wavelength range such that the weightings can be
correlated to one or more characteristics of the sample. An ICE can
be an optical substrate with multiple stacked dielectric layers
(e.g., from about 2 to about 50 layers), each having a different
complex refractive index from its adjacent layers, for example the
thin film optical element 205 as disclosed herein. As will be
appreciated by one of skill in the art, and with the help of this
disclosure, the specific number of layers in the thin film optical
element 205, the optical properties of the layers, the optical
properties of the substrate, the thickness of each layer, etc. can
be selected so that the light processed by the ICE is related to
one or more characteristics of the sample. Further, and as will be
appreciated by one of skill in the art, and with the help of this
disclosure, because ICEs extract information from the light
modified by a sample passively, ICEs can be incorporated in low
cost and rugged optical analysis tools. Hence, ICE-based downhole
optical analysis tools can provide a relatively low cost, rugged
and accurate system for monitoring quality of wellbore fluids, for
example.
[0095] In an embodiment, the ICE can be further employed 2700 in an
optical computing device. Optical computing devices, also commonly
referred to as opticoanalytical devices, can be used to analyze and
monitor a sample or substance in real time. For purposes of the
disclosure herein, the term "optical computing device" refers to an
optical device that is configured to receive an input of
electromagnetic radiation associated with a substance and produce
an output of electromagnetic radiation from an optical processing
element (e.g., ICE, such as the thin film optical element 205)
arranged within or otherwise associated with the optical computing
device. The electromagnetic radiation that optically interacts with
the optical processing element is changed so as to be readable by a
detector, such that an output of the detector can be correlated to
a particular characteristic of the substance being analyzed. The
output of electromagnetic radiation from the optical processing
element can be reflected, transmitted, and/or dispersed
electromagnetic radiation. Whether the detector analyzes reflected,
transmitted, or dispersed electromagnetic radiation may be dictated
by structural parameters of the optical computing device as well as
other considerations known to one of skill in the art.
[0096] In some embodiments, the optical computing device can be
employed 2700 in a downhole tool in a wellbore penetrating a
subterranean formation. For example, the downhole tool can be a
well logging tool, wherein the well logging tool can be configured
as an ICE-based optical analysis tool. As another example, the
downhole tool can be a bottom hole assembly, a drilling assembly, a
sampling tool of a wireline application, and a measurement device
associated with production tubing, and the like, or combinations
thereof.
[0097] In an embodiment, a system for making thin film optical
elements and methods of using same as disclosed herein may display
advantages when compared with conventional systems for making thin
film optical elements and methods of using same. Conventionally,
thin film optical elements are fabricated on large substrates which
are subsequently cored or sized into thin film optical elements of
desired sizes. However, fabricating a small number of customized
thin film optical elements entails unique challenges, such as
difficulty associated with securing substrates with respect to the
deposition plume, individualized quality control etc.
[0098] In an embodiment, a system for making thin film optical
elements and methods of using same as disclosed herein can
advantageously provide for depositing substantially uniform thin
film stacks on substrates of desired shape and size, without the
need to further size the obtained thin film optical elements.
Additional advantages of the systems for making thin film optical
elements and methods of using same as disclosed herein may be
apparent to one of skill in the art viewing this disclosure.
ADDITIONAL DISCLOSURE
[0099] A first embodiment, which is a system for making a thin film
optical element (205) comprising (i) a thin film optical element
(205) comprising a substrate (210) and a first thin film stack
(230), wherein the first thin film stack (230) is deposited on a
first deposition side (220) of the substrate (210); wherein the
first thin film stack (230) comprises two or more film layers;
wherein the first thin film stack (230) is characterized by a first
uniform film thickness; and wherein the first uniform film
thickness is defined as a thickness variation of less than about
.+-.5% in any 10 mm.sup.2 of the first thin film stack (230), when
compared to an average first thin film stack thickness across the
entire first thin film stack (230), (ii) a holder (100) comprising
at least one holder opening (110); wherein the holder (100) has a
holder outer side (102) and a holder inner side (104); wherein the
holder outer side (102) has at least one beveled edge (140)
extending into a lip (130); wherein the beveled edge (140) and the
lip (130) define the at least one holder opening (110); wherein the
lip (130) has a substantially flat side (131) and a beveled edge
side (132); wherein the beveled edge (140) and/or the beveled edge
side (132) of the lip (130) form an angle (135) of less than about
45.degree. with the substantially flat side (131) of the lip (130)
and/or the first deposition side (220); wherein the substantially
flat side (131) of the lip (130) and the holder inner side (104)
define a holder socket (150); wherein the holder (100) is
configured to receive the substrate (210) in the holder socket
(150); wherein the holder opening (110) is configured to expose the
first deposition side (220) of the substrate (210) to a deposition
plume (250, 433, 435); wherein a portion of the first deposition
side (220) of the substrate (210) contacts the substantially flat
side (131) of the lip (130), thereby allowing for the first thin
film stack (230) to be deposited on the first deposition side (220)
of the substrate (210); and wherein the beveled edge side (132) of
the lip (130) and/or the beveled edge (140) provide for the first
uniform film thickness of the first thin film stack (230), and
(iii) a deposition source configured to provide the deposition
plume (250, 433, 435) for depositing the first thin film stack
(230) on the first deposition side (220) of the substrate (210);
wherein the deposition plume (250, 433, 435) travels towards the
first deposition side (220) of the substrate (210) at a direction
substantially perpendicular to the substantially flat side (131) of
the lip (130) and/or to the first deposition side (220) of the
substrate (210); and wherein the beveled edge side (132) of the lip
(130) faces the deposition plume (250, 433, 435).
[0100] A second embodiment, which is the system of the first
embodiment, wherein a value of the angle (135) between (a) the
substantially flat side (131) of the lip (130) and/or the first
deposition side (220) of the substrate (210), and (b) the beveled
edge side (132) of the lip (130) and/or the beveled edge (140) is
effective for minimizing edge effects of a given deposition plume
spatial profile.
[0101] A third embodiment, which is the system of any one of the
first and the second embodiments, wherein the thin film optical
element (205) is characterized by a size of the first deposition
side (220) of the substrate (210) of less than about 0.5 inches
(12.7 mm).
[0102] A fourth embodiment, which is the system of any one of the
first through the third embodiments, wherein the thin film optical
element (205) is characterized by a size of the first deposition
side (220) of the substrate (210) of less than about 0.25 inches
(6.4 mm).
[0103] A fifth embodiment, which is the system of the third
embodiment, wherein the size of the first deposition side (220) of
the substrate (210) is not modified subsequent to the first thin
film stack (230) being deposited on the first deposition side (220)
of the substrate (210).
[0104] A sixth embodiment, which is the system of any one of the
first through the fifth embodiments, wherein the lip (130) is
characterized by a terminal edge (136) that further defines the
holder opening (110).
[0105] A seventh embodiment, which is the system of the sixth
embodiment, wherein the terminal edge (136) is a sharp terminal
edge (145).
[0106] An eighth embodiment, which is the system of the sixth
embodiment, wherein the terminal edge (136) is a blunted terminal
edge (240).
[0107] A ninth embodiment, which is the system of the sixth
embodiment, wherein the terminal edge (136) is a deflecting
terminal edge (440).
[0108] A tenth embodiment, which is the system of any one of the
first through the ninth embodiments, wherein the holder opening
(110), the first deposition side (220) of the substrate (210), or
both the holder opening (110) and the first deposition side (220)
of the substrate (210) are circular (510).
[0109] An eleventh embodiment, which is the system of any one of
the first through the ninth embodiments, wherein the holder opening
(110), the first deposition side (220) of the substrate (210), or
both the holder opening (110) and the first deposition side (220)
of the substrate (210) are elliptical (520).
[0110] A twelfth embodiment, which is the system of any one of the
first through the ninth embodiments, wherein the holder opening
(110), the first deposition side (220) of the substrate (210), or
both the holder opening (110) and the first deposition side (220)
of the substrate (210) are characterized by irregular geometry
(530).
[0111] A thirteenth embodiment, which is the system of any one of
the first through the twelfth embodiments, wherein the substrate
(210) has a second deposition side (225) spatially opposed to the
first deposition side (220); wherein the thin film optical element
(205) further comprises a second thin film stack (231), wherein the
second thin film stack (231) is deposited on the second deposition
side (225) of the substrate (210); wherein the second thin film
stack (231) comprises two or more film layers; wherein the second
thin film stack (231) is characterized by a second uniform film
thickness; wherein the second uniform film thickness is defined as
a thickness variation of less than about .+-.5% in any 10 mm.sup.2
of the second thin film stack (231), when compared to an average
second thin film stack thickness across the entire second thin film
stack (231).
[0112] A fourteenth embodiment, which is the system of the
thirteenth embodiment further comprising a mating holder (301);
wherein the mating holder (301) contacts the holder (100) and the
substrate (210); and wherein the mating holder (301) provides for
securing the substrate (210) in place for the deposition of the
first thin film stack (230) on the first deposition side (220) of
the substrate (210), the deposition of the second thin film stack
(231) on the second deposition side (225) of the substrate (210),
or both the deposition of the first thin film stack (230) on the
first deposition side (220) of the substrate (210) and the
deposition of the second thin film stack (231) on the second
deposition side (225) of the substrate (210).
[0113] A fifteenth embodiment, which is the system of the
fourteenth embodiment, wherein the mating holder (301) comprises at
least one mating holder opening (310); wherein the mating holder
(301) has a mating holder outer side (302) and a mating holder
inner side (304); wherein the mating holder inner side (304)
contacts the holder inner side (104); wherein the mating holder
outer side (302) has at least one beveled edge (340) extending into
a lip (330); wherein the beveled edge (340) and the lip (330) of
the mating holder (301) define the at least one mating holder
opening (310); wherein the lip (330) of the mating holder (301) has
a substantially flat side (331) and a beveled edge side (332);
wherein the beveled edge (340) and/or the beveled edge side (332)
of the lip (330) of the mating holder (301) form an angle (335) of
less than about 45.degree. with the substantially flat side (331)
of the lip (330) of the mating holder (301) and/or the second
deposition side (225); wherein the substantially flat side (331) of
the lip (330) of the mating holder (301) and the mating holder
inner side (304) define a mating holder socket (350); wherein the
mating holder (301) is configured to receive the substrate (210) in
the mating holder socket (350); wherein the mating holder opening
(310) is configured to expose the second deposition side (225) of
the substrate (210) to a deposition plume (250, 433, 435); wherein
a portion of the second deposition side (225) of the substrate
(210) contacts the substantially flat side (331) of the lip (330)
of the mating holder (301), thereby allowing for the second thin
film stack (231) to be deposited on the second deposition side
(225) of the substrate (210); wherein the beveled edge side (332)
of the lip (330) and/or the beveled edge (340) of the mating holder
(301) provide for the second uniform film thickness of the second
thin film stack (231); wherein the holder opening (110) and the
mating holder opening (310) are the same or different; and wherein
the beveled edge side (332) of the lip (330) of the mating holder
(301) is the same or different as the beveled edge side (132) of
the lip (130) of the holder (100).
[0114] A sixteenth embodiment, which is the system of the fifteenth
embodiment, wherein the holder (100) and the mating holder (301)
are configured to spatially rotate the secured substrate (210) to
provide for the deposition plume (250, 433, 435) traveling towards
the second deposition side (225) of the substrate (210) at a
direction substantially perpendicular to the substantially flat
side (331) of the lip (330) of the mating holder (301) and/or to
the second deposition side (225) of the substrate (210); and
wherein the beveled edge side (332) of the lip (330) of the mating
holder (301) faces the deposition plume (250, 433, 435).
[0115] A seventeenth embodiment, which is the system of the
sixteenth embodiment, wherein the beveled edge (340) of the mating
holder (301) and/or the beveled edge side (332) of the lip (330) of
the mating holder (301) are characterized by a geometry effective
for minimizing edge effects of a given deposition plume spatial
profile.
[0116] An eighteenth embodiment, which is the system of any one of
the thirteenth through the seventeenth embodiments, wherein the
thin film optical element (205) is characterized by a size of the
second deposition side (225) of the substrate (210) of less than
about 0.5 inches (12.7 mm).
[0117] A nineteenth embodiment, which is the system of any one of
the thirteenth through the eighteenth embodiments, wherein the thin
film optical element (205) is characterized by a size of the second
deposition side (225) of the substrate (210) of less than about
0.25 inches (6.4 mm).
[0118] A twentieth embodiment, which is the system of any one of
the thirteenth through the nineteenth embodiments, wherein the
first deposition side (220) and the second deposition side (225) of
the substrate (210) are substantially parallel to each other.
[0119] A twenty-first embodiment, which is the system of any one of
the thirteenth through the twentieth embodiments, wherein the first
deposition side (220) and the second deposition side (225) of the
substrate (210) are not parallel to each other.
[0120] A twenty-second embodiment, which is the system of any one
of the thirteenth through the twenty-first embodiments, wherein a
distance between the first deposition side (220) and the second
deposition side (225) of the substrate (210) is less than the size
of the first deposition side (220) and/or the size of the second
deposition side (225).
[0121] A twenty-third embodiment, which is the system of any one of
the thirteenth through the twenty-first embodiments, wherein a
distance between the first deposition side (220) and the second
deposition side (225) of the substrate (210) is equal to or greater
than the size of the first deposition side (220) and/or the size of
the second deposition side (225).
[0122] A twenty-fourth embodiment, which is the system of any one
of the thirteenth through the twenty-third embodiments, wherein
each of the first thin film stack (230) and the second thin film
stack (231) independently comprise from about 2 to about 50
layers.
[0123] A twenty-fifth embodiment, which is the system of any one of
the thirteenth through the twenty-fourth embodiments, wherein each
of the first thin film stack (230) and the second thin film stack
(231) independently comprise from about 7 to about 25 layers.
[0124] A twenty-sixth embodiment, which is the system of any one of
the thirteenth through the twenty-fifth embodiments, wherein each
layer of the first thin film stack (230) and/or the second thin
film stack (231) is independently characterized by a thickness of
from about 0.5 nm to about 2 .mu.m.
[0125] A twenty-seventh embodiment, which is the system of any one
of the thirteenth through the twenty-sixth embodiments, wherein
each of the first thin film stack (230) and/or the second thin film
stack (231) is independently characterized by a thickness of from
about 1 nm to about 10 jam.
[0126] A twenty-eighth embodiment, which is the system of any one
of the first through the twenty-seventh embodiments, wherein the
substrate (210) comprises an optically transparent material, glass,
optically transparent glass, silica, sapphire, silicon, germanium,
zinc selenide, zinc sulfide, polycarbonate, polymethylmethacrylate
(PMMA), polyvinylchloride (PVC), diamond, ceramics, or combinations
thereof.
[0127] A twenty-ninth embodiment, which is the system of any one of
the thirteenth through the twenty-eighth embodiments, wherein each
layer of the first thin film stack (230) and/or the second thin
film stack (231) independently comprises silicon (Si), niobium
(Nb), germanium (Ge), binary oxides, quartz, silica (SiO.sub.2),
niobia (Nb.sub.2O.sub.5), germania (GeO.sub.2), magnesium fluoride
(MgF.sub.2), titania (TiO.sub.2), alumina (Al.sub.2O.sub.3),
hafnium dioxide (HfO.sub.2), ternary oxides, or combinations
thereof.
[0128] A thirtieth embodiment, which is the system of any one of
the thirteenth through the twenty-ninth embodiments, wherein any
two adjacent layers of the first thin film stack (230) and/or the
second thin film stack (231) are characterized by a different
refraction index from each other.
[0129] A thirty-first embodiment, which is the system of any one of
the first through the thirtieth embodiments, wherein the holder
(100) comprises a plurality of holder openings (110); wherein the
plurality of holder openings (110) provides for the deposition of a
thin film stack on a plurality of substrates (210); and wherein
each holder opening (110) is configured to allow for the deposition
of a thin film stack on an individual substrate (210).
[0130] A thirty-second embodiment, which is a method (2000) for
making a thin film optical element (205) comprising (a) placing
(2100) a substrate (210) in a holder socket (150) of a holder
(100); wherein the substrate (210) has a first deposition side
(220); wherein the holder (100) comprises at least one holder
opening (110); wherein the holder (100) has a holder outer side
(102) and a holder inner side (104); wherein the holder outer side
(102) has at least one beveled edge (140) extending into a lip
(130); wherein the beveled edge (140) and the lip (130) define the
at least one holder opening (110); wherein the lip (130) has a
substantially flat side (131) and a beveled edge side (132);
wherein the beveled edge (140) and/or the beveled edge side (132)
of the lip (130) form an angle (135) of less than about 45.degree.
with the substantially flat side (131) of the lip (130) and/or the
first deposition side (220); wherein the substantially flat side
(131) of the lip (130) and the holder inner side (104) define the
holder socket (150), and (b) depositing (2200), with a deposition
plume (250, 433, 435), a first thin film stack (230) on a first
deposition side (220) of the substrate (210) to form a thin film
optical element (205), wherein the thin film optical element (205)
comprises the substrate (210) and the first thin film stack (230)
deposited on the first deposition side (220) of the substrate
(210), wherein the first thin film stack (230) comprises two or
more film layers; wherein the first thin film stack (230) is
characterized by a first uniform film thickness; and wherein the
first uniform film thickness is defined as a thickness variation of
less than about .+-.5% in any 10 mm.sup.2 of the first thin film
stack (230), when compared to an average first thin film stack
thickness across the entire first thin film stack (230), wherein a
portion of the first deposition side (220) of the substrate (210)
contacts the substantially flat side (131) of the lip (130);
wherein the holder opening (110) exposes the first deposition side
(220) of the substrate (210) to the deposition plume (250, 433,
435); wherein the beveled edge side (132) of the lip (130) and/or
the beveled edge (140) provide for the first uniform film thickness
of the first thin film stack (230), wherein the deposition plume
(250, 433, 435) travels towards the first deposition side (220) of
the substrate (210) at a direction substantially perpendicular to
the substantially flat side (131) of the lip (130) and/or to the
first deposition side (220); and wherein the beveled edge side
(132) of the lip (130) faces the deposition plume (250, 433,
435).
[0131] A thirty-third embodiment, which is the method (2000) of the
thirty-second embodiment further excluding modifying the size of
the thin film optical element (205).
[0132] A thirty-fourth embodiment, which is the method (2000) of
any one of the thirty-second and the thirty-third embodiments,
wherein the substrate (210) is sized to a target size prior to
depositing the first thin film stack (230).
[0133] A thirty-fifth embodiment, which is the method (2000) of any
one of the thirty-second through the thirty-fourth embodiments,
wherein a deposition plume spatial profile is tuned in accordance
with the geometry of the beveled edge (140) and/or the geometry of
the beveled edge side (132) of the lip (130) to provide for
minimizing edge effects during depositing the first thin film stack
(230).
[0134] A thirty-sixth embodiment, which is the method (2000) of the
thirty-fifth embodiment, wherein the deposition plume spatial
profile is tuned by focusing the deposition plume (250, 433, 435);
by masking the deposition plume (250, 433, 435); or both by
focusing the deposition plume (250, 433, 435) and by masking the
deposition plume (250, 433, 435).
[0135] A thirty-seventh embodiment, which is the method (2000) of
the thirty-sixth embodiment, wherein an electron beam contacts a
deposition source to produce the deposition plume (250, 433, 435),
and wherein the deposition plume spatial profile is tuned by
focusing the electron beam, by masking the electron beam, or both
by focusing the electron beam and by masking the electron beam.
[0136] A thirty-eighth embodiment, which is the method (2000) of
the thirty-seventh embodiment, wherein the electron beam is an
assisted ion beam.
[0137] A thirty-ninth embodiment, which is the method (2000) of any
one of the thirty-second through the thirty-eighth embodiments,
wherein the substrate (210) has a second deposition side (225)
spatially opposed to the first deposition side (220).
[0138] A fortieth embodiment, which is the method (2000) of the
thirty-ninth embodiment further comprising inverting (2300) the
substrate (210) in the holder socket (150) subsequent to depositing
the first thin film stack (230); wherein the holder opening (110)
exposes the second deposition side (225) of the substrate (210) to
the deposition plume (250, 433, 435); and wherein a portion of the
second deposition side (225) of the substrate (210) contacts the
substantially flat side (131) of the lip (130).
[0139] A forty-first embodiment, which is the method (2000) of the
fortieth embodiment further comprising depositing (2500), with the
deposition plume (250, 433, 435), a second thin film stack (231) on
the second deposition side (225) of the substrate (210); wherein
the thin film optical element (205) further comprises the second
thin film stack (231) deposited on the second deposition side (225)
of the substrate (210).
[0140] A forty-second embodiment, which is the method (2000) of any
one of the thirty-ninth through the forty-first embodiments,
wherein a mating holder (301) contacts the holder (100) and the
substrate (210), and wherein the mating holder (301) provides for
securing the substrate (210) in place for depositing a thin film
stack (230, 231) on the substrate (210).
[0141] A forty-third embodiment, which is the method (2000) of the
forty-second embodiment, wherein the mating holder (301) comprises
at least one mating holder opening (310); wherein the mating holder
(301) has a mating holder outer side (302) and a mating holder
inner side (304); wherein the mating holder inner side (304)
contacts the holder inner side (104); wherein the mating holder
outer side (302) has at least one beveled edge (340) extending into
a lip (330); wherein the beveled edge (340) and the lip (330) of
the mating holder (301) define the at least one mating holder
opening (310); wherein the lip (330) of the mating holder (301) has
a substantially flat side (331) and a beveled edge side (332);
wherein the beveled edge (340) and/or the beveled edge side (332)
of the lip (330) of the mating holder (301) form an angle (335) of
less than about 45.degree. with the substantially flat side (331)
of the lip (330) of the mating holder (301) and/or the second
deposition side (225); wherein the substantially flat side (331) of
the lip (330) of the mating holder (301) and the mating holder
inner side (304) define a mating holder socket (350); wherein the
mating holder (301) receives the substrate (210) in the mating
holder socket (350); wherein a portion of the second deposition
side (225) of the substrate (210) contacts the substantially flat
side (331) of the lip (330) of the mating holder (301); wherein the
holder opening (110) and the mating holder opening (310) are the
same or different; and wherein the beveled edge side (332) of the
lip (330) of the mating holder (301) is the same or different as
the beveled edge side (132) of the lip (130) of the holder
(100).
[0142] A forty-fourth embodiment, which is the method (2000) of the
forty-third embodiment further comprising (i) inverting (2400) the
substrate (210) secured in the holder (100) and the mating holder
(301) subsequent to depositing the first thin film stack (230); and
(ii) depositing (2500), with the deposition plume (250, 433, 435),
a second thin film stack (231) on the second deposition side (225)
of the substrate (210), wherein the thin film optical element (205)
further comprises the second thin film stack (231) deposited on the
second deposition side (225) of the substrate (210), wherein the
second thin film stack (231) comprises two or more film layers;
wherein the second thin film stack (231) is characterized by a
second uniform film thickness; wherein the second uniform film
thickness is defined as a thickness variation of less than about
+5% in any 10 mm.sup.2 of the second thin film stack (231), when
compared to an average second thin film stack thickness across the
entire second thin film stack (231), wherein the mating holder
opening (310) exposes the second deposition side (225) of the
substrate (210) to the deposition plume (250, 433, 435); wherein
the beveled edge of the lip of the mating holder opening (310)
faces the deposition plume (250, 433, 435); and wherein the beveled
edge side (332) of the lip (330) and/or the beveled edge (340) of
the mating holder (301) provide for the second uniform film
thickness of the second thin film stack (231).
[0143] A forty-fifth embodiment, which is the method (2000) of the
forty-fourth embodiment, wherein the thin film optical element
(205) is subjected (2600) to quality control analysis, wherein the
quality control analysis comprises at least one analytical
technique selected from the group consisting of ellipsometry,
reflectance spectroscopy, transmission spectroscopy, and
combinations thereof.
[0144] A forty-sixth embodiment, which is the method (2000) of the
forty-fifth embodiment, wherein the quality control analysis
comprises ellipsometry to assess film thickness and uniformity of
the first thin film stack (230) and/or the second thin film stack
(231).
[0145] A forty-seventh embodiment, which is the method (2000) of
any one of the forty-fifth and the forty-sixth embodiments, wherein
the quality control analysis comprises reflectance spectroscopy to
assess a reflectance function of the thin film optical element
(205).
[0146] A forty-eighth embodiment, which is the method (2000) of any
one of the forty-fifth through the forty-seventh embodiments,
wherein the quality control analysis comprises transmission
spectroscopy to assess a transmission function of the thin film
optical element (205).
[0147] A forty-ninth embodiment, which is the method (2000) of any
one of the forty-fifth through the forty-eighth embodiments,
wherein the first thin film stack (230) is subjected (2600) to
quality control analysis prior to and/or subsequent to depositing
the second thin film stack (231).
[0148] A fiftieth embodiment, which is the method (2000) of any one
of the forth-fifth through the forty-ninth embodiments, wherein the
first thin film stack (230) and/or the second thin film stack (231)
are subjected (2600) to quality control analysis.
[0149] A fifty-first embodiment, which is the method (2000) of any
one of the thirty-second through the fiftieth embodiments, wherein
the thin film optical element (205) is an integrated computational
element (ICE), and wherein the ICE is further employed (2700) in an
optical computing device.
[0150] A fifty-second embodiment, which is the method (2000) of the
fifty-first embodiment, wherein the optical computing device is
employed (2700) in a downhole tool in a wellbore penetrating a
subterranean formation.
[0151] A fifty-third embodiment, which is a holder system for
making a thin film optical element comprising (i) a holder outer
side (102) comprising at least one beveled edge (140) extending
into a lip (130) comprising a substantially flat side (131) and a
beveled edge side (132), wherein the beveled edge (140) and/or the
beveled edge side (132) of the lip (130) form an angle of less than
about 45.degree. with the substantially flat side (131) of the lip
(130); (ii) at least one holder opening (110) defined by the
beveled edge (140) and the lip (130); (iii) a holder inner side
(104); and (iv) a holder socket (150) defined by the substantially
flat side (131) of the lip (130) and the holder inner side (104),
wherein the holder (100) is configured to receive a substrate (210)
in the holder socket (150); and wherein the holder opening (110) is
configured to expose a first deposition side (220) of the substrate
(210) to a deposition plume (250, 433, 435).
[0152] While embodiments of the invention have been shown and
described, modifications thereof can be made by one skilled in the
art without departing from the spirit and teachings of the
invention. The embodiments described herein are exemplary only, and
are not intended to be limiting. Many variations and modifications
of the invention disclosed herein are possible and are within the
scope of the invention. Where numerical ranges or limitations are
expressly stated, such express ranges or limitations should be
understood to include iterative ranges or limitations of like
magnitude falling within the expressly stated ranges or limitations
(e.g., from about 1 to about 10 includes, 2, 3, 4, etc.; greater
than 0.10 includes 0.11, 0.12, 0.13, etc.). For example, whenever a
numerical range with a lower limit, R.sub.L, and an upper limit,
R.sub.U, is disclosed, any number falling within the range is
specifically disclosed. In particular, the following numbers within
the range are specifically disclosed:
R=R.sub.L+k*(R.sub.U-R.sub.L), wherein k is a variable ranging from
1 percent to 100 percent with a 1 percent increment, i.e., k is 1
percent, 2 percent, 3 percent, 4 percent, 5 percent, . . . , 50
percent, 51 percent, 52 percent, . . . , 95 percent, 96 percent, 97
percent, 98 percent, 99 percent, or 100 percent. Moreover, any
numerical range defined by two R numbers as defined in the above is
also specifically disclosed. When a feature is described as
"optional," both embodiments with this feature and embodiments
without this feature are disclosed. Similarly, the present
disclosure contemplates embodiments where this feature is required
and embodiments where this feature is specifically excluded. Both
alternatives are intended to be within the scope of the claim. Use
of broader terms such as comprises, includes, having, etc. should
be understood to provide support for narrower terms such as
consisting of, consisting essentially of, comprised substantially
of, etc.
[0153] Accordingly, the scope of protection is not limited by the
description set out above but is only limited by the claims which
follow, that scope including all equivalents of the subject matter
of the claims. Each and every claim is incorporated into the
specification as an embodiment of the present invention. Thus, the
claims are a further description and are an addition to the
embodiments of the present invention. The discussion of a reference
in the Description of Related Art is not an admission that it is
prior art to the present invention, especially any reference that
may have a publication date after the priority date of this
application. The disclosures of all patents, patent applications,
and publications cited herein are hereby incorporated by reference,
to the extent that they provide exemplary, procedural or other
details supplementary to those set forth herein.
* * * * *