U.S. patent application number 16/993290 was filed with the patent office on 2021-02-25 for electronic device.
This patent application is currently assigned to Au Optronics Corporation. The applicant listed for this patent is Au Optronics Corporation. Invention is credited to Ping-Wen Chen, Sheng-Yen Cheng, Yueh-Hung Chung, Ya-Ling Hsu, Min-Tse Lee, Chen-Hsien Liao, Jia-Hong Wang, Ti-Kuei Yu.
Application Number | 20210055611 16/993290 |
Document ID | / |
Family ID | 1000005061267 |
Filed Date | 2021-02-25 |
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United States Patent
Application |
20210055611 |
Kind Code |
A1 |
Chung; Yueh-Hung ; et
al. |
February 25, 2021 |
ELECTRONIC DEVICE
Abstract
An electronic device including a substrate, transversal signal
lines, a first vertical signal line, a second vertical signal line,
and a first shielding vertical line is provided. The transversal
signal lines, the first vertical signal line, the second vertical
signal line, and the first shielding vertical line are disposed on
the substrate. The first vertical signal line and the second
vertical signal line are intersected with the transversal signal
lines. The second vertical signal line is connected to one of the
transversal signal lines. An orthogonal projection of the first
shielding vertical line on the substrate is between an orthogonal
projection of the first vertical signal line on the substrate and
an orthogonal projection of the second vertical signal line on the
substrate.
Inventors: |
Chung; Yueh-Hung; (Hsinchu,
TW) ; Lee; Min-Tse; (Hsinchu, TW) ; Cheng;
Sheng-Yen; (Hsinchu, TW) ; Chen; Ping-Wen;
(Hsinchu, TW) ; Wang; Jia-Hong; (Hsinchu, TW)
; Yu; Ti-Kuei; (Hsinchu, TW) ; Hsu; Ya-Ling;
(Hsinchu, TW) ; Liao; Chen-Hsien; (Hsinchu,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Au Optronics Corporation |
Hsinchu |
|
TW |
|
|
Assignee: |
Au Optronics Corporation
Hsinchu
TW
|
Family ID: |
1000005061267 |
Appl. No.: |
16/993290 |
Filed: |
August 14, 2020 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62889181 |
Aug 20, 2019 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G02F 1/133707 20130101;
H01L 23/60 20130101; G02F 1/136213 20130101; G02F 1/136218
20210101; G02F 1/136286 20130101; G02F 1/134345 20210101; G02F
1/134309 20130101 |
International
Class: |
G02F 1/1343 20060101
G02F001/1343; G02F 1/1362 20060101 G02F001/1362; G02F 1/1337
20060101 G02F001/1337; H01L 23/60 20060101 H01L023/60 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 3, 2020 |
CN |
202010775201.4 |
Claims
1. An electronic device, comprising: a substrate; a plurality of
transversal signal lines, disposed on the substrate; a first
vertical signal line, disposed on the substrate, intersected with
the transversal signal lines; a second vertical signal line,
disposed on the substrate, intersected with the transversal signal
lines, wherein the second vertical signal line is connected to one
of the transversal signal lines; and a first shielding vertical
line, disposed on the substrate, wherein an orthogonal projection
of the first shielding vertical line on the substrate is located
between an orthogonal projection of the first vertical signal line
on the substrate and an orthogonal projection of the second
vertical signal line on the substrate.
2. The electronic device according to claim 1, further comprising a
plurality of pixel structures disposed on the substrate, wherein
one of the pixel structures is surrounded by adjacent two of the
transversal signal lines and the second vertical signal line and
comprises a pixel electrode, wherein the pixel electrode is
overlapped with the first vertical signal line or the second
vertical signal line in a direction perpendicular to the
substrate.
3. The electronic device according to claim 2, wherein the pixel
electrode is overlapped with the first shielding vertical line.
4. The electronic device according to claim 2, wherein the pixel
electrode traverses the second vertical signal line, the pixel
electrode has a central trunk portion, and the second vertical
signal line is overlapped with the central trunk portion.
5. The electronic device according to claim 1, wherein the first
shielding vertical line is a transparent wire.
6. The electronic device according to claim 1, further comprising a
common electrode line disposed on the substrate, wherein the common
electrode line is located between the adjacent two of the
transversal signal lines.
7. The electronic device according to claim 6, wherein the common
electrode line is intersected with the first vertical signal line
and the second vertical signal line.
8. The electronic device according to claim 6, wherein the first
shielding vertical line and the common electrode line are directly
stacked on each other.
9. The electronic device according to claim 6, further comprising
at least one insulating layer and a conducting structure
penetrating the at least one insulating layer, wherein the at least
one insulating layer is disposed between the first shielding
vertical line and the common electrode line, and the conducting
structure electrically connects the first shielding vertical line
and the common electrode line.
10. The electronic device according to claim 6, further comprising
a plurality of pixel structures disposed on the substrate, wherein
one of the pixel structures is located between adjacent two of the
transversal signal lines and comprises a pixel electrode, wherein a
film layer of the first shielding vertical line is located between
a film layer of the common electrode line and a film layer of the
pixel electrode.
11. The electronic device according to claim 6, further comprising
a plurality of pixel structures disposed on the substrate, wherein
one of the pixel structures is located between adjacent two of the
transversal signal lines and comprises a pixel electrode, wherein a
film layer of the common electrode line is located between a film
layer of the first shielding vertical line and a film layer of the
pixel electrode.
12. The electronic device according to claim 6, wherein the common
electrode line comprises a first line and a second line, and the
first shielding vertical line is overlapped with the first line,
the second line, or both the first line and the second line.
13. The electronic device according to claim 1, further comprising
a second shielding vertical line, wherein the first vertical signal
line is located between the first shielding vertical line and the
second shielding vertical line.
14. The electronic device according to claim 13, further comprising
a third vertical signal line, wherein the third vertical signal
line is located between the first vertical signal line and the
second shielding vertical line.
15. The electronic device according to claim 14, further comprising
a fourth vertical signal line, wherein orthogonal projections of
the first vertical signal line and the third vertical signal line
on the substrate are located between the orthogonal projection of
the second vertical signal line on the substrate and an orthogonal
projection of the fourth vertical signal line on the substrate.
16. The electronic device according to claim 1, further comprising:
a shielding electrode, connected to the first shielding vertical
line.
17. The electronic device according to claim 1, wherein the first
shielding vertical line is completely located between adjacent two
of the transversal signal lines.
18. The electronic device according to claim 1, further comprising:
a plurality of pixel structures disposed on the substrate, wherein
one of the pixel structures comprises a pixel electrode, wherein
the orthogonal projection of the first shielding vertical line on
the substrate is outside an orthogonal projection of the pixel
electrode on the substrate.
19. The electronic device according to claim 1, further comprising
a plurality of pixel structures and a third vertical signal line,
wherein the pixel structures are arranged on the substrate in an
array, the second vertical signal line is located between the third
vertical signal line and the first vertical signal line, and the
first vertical signal line, the second vertical signal line, and
the third vertical signal line are located between two adjacent
rows of the pixel structures.
20. The electronic device according to claim 19, further comprising
a second shielding vertical line disposed on the substrate, wherein
an orthogonal projection of the second shielding vertical line on
the substrate is located between the orthogonal projection of the
second vertical signal line on the substrate and an orthogonal
projection of the third vertical signal line on the substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefits of U.S.
provisional application Ser. No. 62/889,181, filed on Aug. 20, 2019
and China application serial no. 202010775201.4, filed on Aug. 3,
2020. The entirety of each of the above-mentioned patent
applications is hereby incorporated by reference herein and made a
part of this specification.
BACKGROUND
Technical Field
[0002] The disclosure relates to an electronic device.
Description of Related Art
[0003] Along with popularization of electronic products, circuit
layouts in various electronic devices also become complicated.
Therefore, many adjacent lines may be used to transmit different
types of signals. However, a coupling effect between the adjacent
lines often affects the quality of signal transmission, which leads
to unsatisfactory functions finally presented. Therefore, design of
circuit layout is often one of design priorities in electronic
products.
SUMMARY
[0004] The disclosure is directed to an electronic device designed
to facilitate reduction of a coupling effect between lines and
quality improvement of the electronic device.
[0005] The disclosure provides an electronic device including a
substrate, a plurality of transversal signal lines, a first
vertical signal line, a second vertical signal line, and a first
shielding vertical line. The transversal signal lines, the first
vertical signal line, the second vertical signal line, and the
first shielding vertical line are disposed on the substrate. The
first vertical signal line is intersected with the transversal
signal lines. The second vertical signal line is intersected with
the transversal signal lines, and the second vertical signal line
is connected to one of the transversal signal lines. An orthogonal
projection of the first shielding vertical line on the substrate is
located between an orthogonal projection of the first vertical
signal line on the substrate and an orthogonal projection of the
second vertical signal line on the substrate.
[0006] In an embodiment of the disclosure, the electronic device
further includes a plurality of pixel structures disposed on the
substrate. One of the pixel structures is surrounded by adjacent
two of the transversal signal lines and the second vertical signal
line and includes a pixel electrode. The pixel electrode is
overlapped with the first vertical signal line or the second
vertical signal line in a direction perpendicular to the
substrate.
[0007] In an embodiment of the disclosure, the pixel electrode is
overlapped with the first shielding vertical line.
[0008] In an embodiment of the disclosure, the pixel electrode
traverses the second vertical signal line, the pixel electrode has
a central trunk portion, and the second vertical signal line is
overlapped with the central trunk portion.
[0009] In an embodiment of the disclosure, the first shielding
vertical line is a transparent wire.
[0010] In an embodiment of the disclosure, the electronic device
further includes a common electrode line. The common electrode line
is disposed on the substrate. The common electrode line is located
between the adjacent two of the transversal signal lines.
[0011] In an embodiment of the disclosure, the common electrode
line is intersected with the first vertical signal line and the
second vertical signal line.
[0012] In an embodiment of the disclosure, the first shielding
vertical line and the common electrode line are directly stacked on
each other.
[0013] In an embodiment of the disclosure, the electronic device
further includes at least one insulating layer and a conducting
structure penetrating the insulating layer. The insulating layer is
disposed between the first shielding vertical line and the common
electrode line, and the conducting structure electrically connects
the first shielding vertical line and the common electrode
line.
[0014] In an embodiment of the disclosure, the electronic device
further includes a plurality of pixel structures disposed on the
substrate. One of the pixel structures is located between adjacent
two of the transversal signal lines and includes a pixel electrode.
A film layer of the first shielding vertical line is located
between a film layer of the common electrode line and a film layer
of the pixel electrode.
[0015] In an embodiment of the disclosure, the electronic device
further includes a plurality of pixel structures disposed on the
substrate. One of the pixel structures is located between adjacent
two of the transversal signal lines and includes a pixel electrode.
A film layer of the common electrode line is located between a film
layer of the first shielding vertical line and a film layer of the
pixel electrode.
[0016] In an embodiment of the disclosure, the common electrode
line includes a first line and a second line. The first shielding
vertical line is overlapped with the first line, the second line,
or both the first line and the second line.
[0017] In an embodiment of the disclosure, the electronic device
further includes a second shielding vertical line. The first
vertical signal line is located between the first shielding
vertical line and the second shielding vertical line.
[0018] In an embodiment of the disclosure, the electronic device
further includes a third shielding vertical line. The third
shielding vertical line is located between the first vertical
signal line and the second shielding vertical line.
[0019] In an embodiment of the disclosure, the electronic device
further includes a fourth vertical signal line. Orthogonal
projections of the first vertical signal line and the third
vertical signal line on the substrate are located between the
orthogonal projection of the second vertical signal line on the
substrate and an orthogonal projection of the fourth vertical
signal line on the substrate.
[0020] In an embodiment of the disclosure, the electronic device
further includes a shielding electrode. The shielding electrode is
connected to the first shielding vertical line.
[0021] In an embodiment of the disclosure, the first shielding
vertical line is completely located between adjacent two of the
transversal signal lines.
[0022] In an embodiment of the disclosure, the electronic device
further includes a plurality of pixel structures disposed on the
substrate. One of the pixel structures includes a pixel electrode.
The orthogonal projection of the first shielding vertical line on
the substrate is outside an orthogonal projection of the pixel
electrode on the substrate.
[0023] In an embodiment of the disclosure, the electronic device
further includes a plurality of pixel structures and a third
vertical signal line. The pixel structures are arranged on the
substrate in an array. The second vertical signal line is located
between the third vertical signal line and the first vertical
signal line, and the first vertical signal line, the second
vertical signal line, and the third vertical signal line are
located between two adjacent rows of the pixel structures.
[0024] In an embodiment of the disclosure, the electronic device
further includes a second shielding vertical line disposed on the
substrate. An orthogonal projection of the second shielding
vertical line on the substrate is located between the orthogonal
projection of the second vertical signal line on the substrate and
an orthogonal projection of the third vertical signal line on the
substrate.
[0025] Based on the above description, in the electronic device of
the disclosure, the shielding wires are arranged between adjacent
lines that transmit different signals to reduce adverse effects
caused by a coupling effect between the lines. Moreover, in some
embodiments, the shielding wires may be transparent wires.
Therefore, when the electronic device is used for displaying
images, a display aperture ratio thereof is not affected by the
shielding wires and is not reduced.
[0026] To make the aforementioned more comprehensible, several
embodiments accompanied with drawings are described in detail as
follows.
BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The accompanying drawings are included to provide a further
understanding of the disclosure, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the disclosure and, together with the description,
serve to explain the principles of the disclosure.
[0028] FIG. 1 is a partial schematic top view of an electronic
device.
[0029] FIG. 2 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure.
[0030] FIG. 3 is a schematic cross-sectional view of the electronic
device of FIG. 2 along a section line A-A according to an
embodiment of the disclosure.
[0031] FIG. 4 is a schematic cross-sectional view of the electronic
device of FIG. 2 along the section line A-A according to another
embodiment of the disclosure.
[0032] Each of FIG. 5 to FIG. 10 is a partial schematic view of an
electronic device according an embodiment of the disclosure.
[0033] FIG. 11 is a schematic cross-sectional view of the
electronic device of FIG. 2 along a section line B-B according to
another embodiment of the disclosure.
[0034] FIG. 12 is a schematic cross-sectional view of the
electronic device of FIG. 2 along the section line B-B according to
an embodiment of the disclosure.
[0035] Each of FIG. 13 to FIG. 19 is a partial schematic view of an
electronic device according to an embodiment of the disclosure.
[0036] FIG. 20 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along a section line
C-C according to an embodiment of the disclosure.
[0037] FIG. 21 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along a section line
D-D according to an embodiment of the disclosure.
[0038] FIG. 22 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line C-C according to another embodiment of the disclosure.
[0039] FIG. 23 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line D-D according to another embodiment of the disclosure.
[0040] FIG. 24 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line C-C according to still another embodiment of the
disclosure.
[0041] FIG. 25 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line D-D according to still another embodiment of the
disclosure.
[0042] FIG. 26 is a schematic top view of an electronic device
according to an embodiment of the disclosure.
[0043] FIG. 27 is a schematic top view of an electronic device
according to an embodiment of the disclosure.
[0044] FIG. 28 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 27 along a section line
E-E according to an embodiment of the disclosure.
[0045] FIG. 29 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 27 along a section line
E-E according to an embodiment of the disclosure.
[0046] FIG. 30 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure.
[0047] FIG. 31 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure.
[0048] FIG. 32 is a schematic cross-sectional view illustrating a
structure of a first shielding vertical line 250A in an electronic
device 200A of FIG. 31 according to embodiment of the
disclosure.
[0049] FIG. 33 schematic cross-sectional view illustrating a
structure of the first shielding vertical line 250A in the
electronic device 200A of FIG. 31 according to another embodiment
of the disclosure.
[0050] Each of FIG. 34 to FIG. 36 is a partial schematic top view
of an electronic device according to an embodiment of the
disclosure.
[0051] FIG. 37 is a schematic cross-sectional view illustrating a
structure of a first shielding vertical line 350A in an electronic
device 300 according to an embodiment of the disclosure.
[0052] FIG. 38 is a schematic cross-sectional view illustrating a
structure of the first shielding vertical line 350A in the
electronic device 300 according to another embodiment of the
disclosure.
[0053] FIG. 39 is a schematic cross-sectional view illustrating a
structure of the electronic device 300 according to another
embodiment of the disclosure.
DESCRIPTION OF THE EMBODIMENTS
[0054] FIG. 1 is a partial schematic top view of an electronic
device. In FIG. 1, an electronic device 100' includes a substrate
110, a plurality of transversal signal lines 120, a plurality of
vertical signal lines 130, and a plurality of pixel structures 140.
The pixel structures 140 are arranged on the substrate 110 in an
array. In other words, the pixel structures 140 are arranged in an
array along a first direction D1 and a second direction D2
intersected with the first direction D1, where the first direction
D1 may be interpreted as a transversal direction, and the second
direction D2 may be interpreted as a vertical direction. Therefore,
the transversal and vertical directions described in the following
embodiments may be respectively regarded as the first direction D1
and the second direction D2 in FIG. 1. Each of the pixel structures
140 is connected to one of the transversal signal lines 120. In
addition, the vertical signal lines 130 may be divided into
vertical signal lines DL directly connected to the pixel structures
140 and vertical signal lines VL not directly connected to the
pixel structures 140. The pixel structures 140 arranged in a column
along the second direction D2 are sandwiched between two vertical
signal lines DL, and each of the pixel structures 140 is connected
to one of the vertical signal lines DL. In some embodiments, the
different pixel structures 140 arranged in the same column along
the second direction D2 may be respectively connected to the
vertical signal line DL on a first side and the vertical signal
line DL on an opposite second side. Each of the vertical signal
lines VL is sandwiched between two columns of the pixel structures
140 and two of the vertical signal lines DL. In some embodiments,
the vertical signal lines VL include vertical signal lines VL1
connected to the transversal signal line 120 through corresponding
conducting structures VIA, but the disclosure is not limited
thereto.
[0055] In some embodiment, each of the pixel structures 140 may
include an active device 142 and a pixel electrode 144 connected to
the active device 142, where each active device 142 may be a
transistor having a gate, a source, and a drain, and the gate may
be connected to one of the transversal signal lines 120, the source
is connected to one of the vertical signal lines DL, and the drain
is connected to the pixel electrode 144. Moreover, each of the
transversal signal lines 120 is connected to one of the vertical
signal lines VL1. Therefore, a signal of the gate of the active
device 142 may be transmitted from the vertical signal line VL1 to
the transversal signal line 120, and then input to the gate by the
transversal signal line 120. To be specific, in order to avoid a
short circuit between the transversal signal lines 120 and the
vertical signal lines 130, the transversal signal lines 120 and the
vertical signal lines 130 may be formed by different film layers,
and there may be one or a plurality of insulating layers sandwiched
between the transversal signal lines 120 and the vertical signal
lines 130. In some embodiments, in order to transmit the signal
from the vertical signal line VL1 to the transversal signal line
120, the conducting structure VIA may be configured between the
corresponding vertical signal line VL1 and the transversal signal
line 120. In this way, the signal required by the gate may be
transmitted to the transversal signal line 120 from the vertical
signal line VL1 through the conducting structure VIA, and then
transmitted to the gate from the transversal signal line 120.
[0056] In some embodiments, the electronic device 100' may further
include a driving circuit IC, and the driving circuit IC is located
at one end of the vertical signal line 130. The vertical signal
lines DL and the vertical signal lines VL1 may directly receive
signals provided by the driving circuit IC, and the transversal
signal lines 120 may receive the corresponding signals through the
vertical signal lines VL1. In this way, it is unnecessary to
configure wires or related circuits used for transmitting signals
at two ends of the electronic device 100' in the first direction
D1, so as to achieve a narrow border design, and a contour of the
electronic device 100' is not limited. For example, from a top-view
perspective, the electronic device 100' may have a non-rectangular
contour. In some embodiments, the vertical signal lines VL in the
electronic device 100' may further include vertical signal lines
VL2, and the vertical signal lines VL2 may not be used to transmit
the signals required by the transversal signal lines 120, but may
be input with a DC potential. For example, the vertical signal
lines VL2 may not be connected to any transversal signal line 120,
but may be used for implementing touch control or other
functions.
[0057] FIG. 2 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. An electronic
device 100A of FIG. 2 has a layout design substantially similar to
that of the electronic device 100' of FIG. 1, so that the same
component symbols are adopted in the two embodiments to denote the
same components. In FIG. 2, the electronic device 100A includes the
substrate 110, a plurality of the transversal signal lines 120, a
plurality of the vertical signal lines 130, a plurality of the
pixel structures 140, and a plurality of first shielding vertical
lines 150A, and the transversal signal lines 120, the vertical
signal lines 130, the pixel structures 140, the first shielding
vertical lines 150A and a common electrode line 160 are all
disposed on the substrate 110. A layout and a connection
relationship of the transversal signal lines 120, the vertical
signal lines 130, and the pixel structures 140 are, for example, as
shown in FIG. 1, and are not repeated here. For the convenience of
description, the signal lines around the single pixel structure 140
located in the middle of FIG. 2 are mainly described below.
[0058] In the embodiment, an extending direction of the transversal
signal lines 120 is, for example, the first direction D1 shown in
FIG. 1, and an extending direction of the vertical signal lines 130
is, for example, the second direction D2 shown in FIG. 1, where the
transversal and vertical directions are intersected with each
other, but an intersection angle of the two directions is not
limited to 90 degrees. The vertical signal lines 130 may include a
first vertical signal line 132 and a second vertical signal line
134 on one side of the pixel structure 140, where the first
vertical signal line 132 is a vertical signal line directly
connected to one of the pixel structures 140, and the second
vertical signal line 134 may be connected to one of the transversal
signal lines 120 in the entire electronic device 100A. One of the
pixel structures 140 is located between adjacent two of the
transversal signal lines 120 and is located on one side of the
second vertical signal line 134. The single pixel structure 140 may
include the active device 142 and the pixel electrode 144, where
three terminals of the active device 142 are respectively connected
to the corresponding transversal signal line 120, the first
vertical signal line 132, and the pixel electrode 144.
[0059] The transversal signal lines 120 are, for example, scan
signal lines, which are configured to provide scan signals to the
pixel structures 140, and the first vertical signal line 132 is
configured to provide a data signal to the pixel structure 140. In
other words, although the first vertical signal line 132 and the
second vertical signal line 134 are adjacent to each other, they
are used to transmit different types of signals. Under such circuit
configuration, coupling of the first vertical signal line 132 and
the second vertical signal line 134 may probably decrease signal
transmission quality of the two vertical signal lines 132 and 134.
However, in the embodiment, an orthogonal projection of the first
shielding vertical line 150A on the substrate 110 (i.e., a layout
area in FIG. 2) is located between an orthogonal projection of the
first vertical signal line 132 on the substrate 110 and an
orthogonal projection of the second vertical signal line 134 on the
substrate 110. Moreover, the electronic device 100A may further
include the common electrode line 160, and the first shielding
vertical line 150A may be connected to the common electrode line
160 to be applied with a common potential. In this way, the
arrangement of the first shielding vertical line 150A may reduce
the interference between the first vertical signal line 132 and the
second vertical signal line 134 to ensure the signal transmission
quality of the first vertical signal line 132 and the second
vertical signal line 134, so that functions (such as image display,
touch sensing, etc.) executed by the electronic device 100A may
meet expectations. In FIG. 2, the common electrode line 160
includes a first line 162 and a second line 164, where the first
line 162 and the second line 164 are located between two adjacent
horizontal signal lines 120 and located on opposite sides of the
pixel structure 140. In addition, the first shielding vertical line
150A may be overlapped with both the first line 162 and the second
line 164, but the disclosure is not limited thereto.
[0060] In the embodiment, the vertical signal lines 130 may further
include a third vertical signal line 136 and a fourth vertical
signal line 138 located on the other side of the pixel structure
140. The pixel structure 140 is, for example, located between the
second vertical signal line 134 and the fourth vertical signal line
138. The third vertical signal line 136 is located between the
fourth vertical signal line 138 and the first vertical signal line
132. Moreover, orthogonal projections of the first vertical signal
line 132 and the third vertical signal line 136 on the substrate
110 are located between the orthogonal projection of the second
vertical signal line 134 on the substrate 110 and an orthogonal
projection of the fourth vertical signal line 138 on the substrate
110. In addition, the shielding vertical line may not be provided
between the third vertical signal line 136 and the fourth vertical
signal line 138, but the disclosure is not limited thereto. The
third vertical signal line 136 is connected to other pixel
structures in the same column, and the fourth vertical signal line
138 may be connected to a DC potential or one of the transversal
signal lines 120 in the entire electronic device 100A, but the
disclosure is not limited thereto.
[0061] In the embodiment, the pixel electrode 144 of the pixel
structure 140 may be overlapped with the first vertical signal line
132, the second vertical signal line 134, the third vertical signal
line 136, the fourth vertical signal line 138 and the first
shielding vertical line 150A in a direction perpendicular to the
substrate 110. To be specific, the pixel electrode 144 may traverse
the first vertical signal line 132, the first shielding vertical
line 150A, and the third vertical signal line 136, and may be
overlapped with the second vertical signal line 134 by a part of
width of the second vertical signal line 134 and overlapped with
the fourth vertical signal line 138 by a part of width of the
fourth vertical signal line 138. The first shielding vertical line
150A may be a transparent wire, so that the portion of the pixel
electrode 144 overlapped with the first shielding vertical line
150A may still serve as an effective display area. In this way,
although the electronic device 100A is additionally configured with
the first shielding vertical line 150A, a display area of the
electronic device 100A is not reduced due to configuration of the
first shielding vertical line 150A.
[0062] Moreover, in the embodiment, the pixel electrode 144 may
include a vertical trunk portion MV, a horizontal trunk portion MH,
and a plurality of stripe portions ST, where the vertical trunk
portion MV and the horizontal trunk portion MH are intersected in a
cross shape to define four sub-regions, and the stripe portions ST
are connected to the vertical trunk portion MV and the horizontal
trunk portion MH and extend outward from the vertical trunk portion
MV and the horizontal trunk portion MH in a substantially radial
manner. However, in other embodiments, the pixel electrode 144 may
have other patterns or may be regarded as a complete rectangular
shape.
[0063] FIG. 3 is a schematic cross-sectional view of the electronic
device of FIG. 2 along a section line A-A according to an
embodiment of the disclosure. Referring to FIG. 2 and FIG. 3, the
common electrode line 160 is disposed on the substrate 110. In the
embodiment, a film layer where the common electrode line 160 is
located may be the same as a film layer where the transversal
signal lines 120 are located. Materials of the common electrode
line 160 and the transversal signal lines 120 include a material
with good conductivity, such as metal or alloy. The film layer
where the common electrode line 160 and the transversal signal
lines 120 are located is, for example, closer to the substrate 110
than film layers where other circuits are located, but the
disclosure is not limited thereto.
[0064] After the common electrode line 160 and the transversal
signal lines 120 are fabricated, another conductive layer may be
directly formed to fabricate the first shielding vertical line
150A, so that the first shielding vertical line 150A is directly
stacked on the common electrode line 160. In other words, the first
shielding vertical line 150A directly contacts the common electrode
line 160 without an intermediate layer. The first shielding
vertical line 150A may be a transparent conductive pattern. A
material of the first shielding vertical line 150A may be metal
oxide, for example: indium tin oxide, indium zinc oxide, aluminum
tin oxide, aluminum zinc oxide, indium germanium zinc oxide, or
other suitable oxides, or a stacked layer of at least two of the
above materials. Alternatively, the material of the first shielding
vertical line 150A may be an organic transparent conductive
material. In some embodiments, since the material of the first
shielding vertical line 150A and the material of the common
electrode line 160 have different properties, it is less likely to
damage the common electrode line 160 and the transversal signal
lines 120 during a patterning process of the first shielding
vertical line 150A. Therefore, the first shielding vertical line
150A may be directly stacked on the common electrode line 160
without the intermediate layer.
[0065] After the first shielding vertical line 150A is fabricated,
an insulating layer I1 may be formed on the substrate 110, and then
the vertical signal lines 130 are fabricated. The vertical signal
lines 130 may be intersected with the transversal signal lines 120
and the common electrode line 160. Therefore, the arrangement of
the insulating layer I1 may separate the vertical signal lines 130
from the common electrode line 160 and also separate the vertical
signal lines 130 from the transversal signal lines 120. In some
embodiments, a material of the insulating layer I1 may include an
inorganic insulating material or an organic insulating material,
where the inorganic insulating material includes silicon oxide,
silicon nitride, or silicon oxynitride, etc., and the organic
insulating material includes polymethyl methacrylate (PMMA),
polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI),
etc. In addition, a material of the vertical signal lines 130
includes a material with good conductivity, such as metal or
alloy.
[0066] After the vertical signal lines 130 are fabricated, one or
more insulating layers or functional layers may be selectively
formed on the substrate 110, and in the embodiment, an insulating
layer I2, a filter layer CF, and an insulating layer I3 are used as
an example for description, but the disclosure is not limited
thereto. Materials of the insulating layers I2 and I3 may include
inorganic insulating materials or organic insulating materials,
where the inorganic insulating materials include silicon oxide,
silicon nitride, or silicon oxynitride, etc., and the organic
insulating materials include polymethyl methacrylate (PMMA),
polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI),
etc. A material of the filter layer CF may include a color filter
material, such as a red filter material, a green filter material,
and a blue filter material. In addition, the insulating layer I3
may have a relatively thick thickness to serve as a planarization
layer, but the disclosure is not limited thereto.
[0067] The pixel electrode 144 may be formed on the insulating
layer I3. A material of the pixel electrode 144 may include a
transparent conductive material. The transparent conductive
material may include metal oxides, such as indium tin oxide, indium
zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium
germanium zinc oxide, or other suitable oxides, or a stacked layer
of at least two of the above materials. Alternatively, the
transparent conductive material may be an organic transparent
material. In some embodiments, a material of the pixel electrode
144 may be the same as the material of the first shielding vertical
line 150A.
[0068] FIG. 4 is a schematic cross-sectional view of the electronic
device of FIG. 2 along the section line A-A according to another
embodiment of the disclosure. In FIG. 4, the first shielding
vertical line 150A, the common electrode line 160, the insulating
layer I1, the vertical signal lines 130, the insulating layer I2,
the filter layer CF, the insulating layer I3, and the pixel
electrode 144 are sequentially stacked on the substrate 110. To be
specific, a difference between the cross section of FIG. 4 and the
cross section of FIG. 3 lies in a stacking order of the first
shielding vertical line 150A and the common electrode line 160.
Therefore, the related description of FIG. 3 may be referred for
the materials and stacking relationship of each film layer in the
cross section of FIG. 4.
[0069] FIG. 5 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100B of FIG. 5 is substantially similar to the electronic device
100A of FIG. 2, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100B may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, a first shielding
vertical line 150B, and a second shielding vertical line 152B. The
vertical signal lines 130 may include the first vertical signal
line 132, the second vertical signal line 134, the third vertical
signal line 136, and the fourth vertical signal line 138. The
embodiment of FIG. 2 may be referred for the relative relationship
of the substrate 110, the transversal signal lines 120, the first
vertical signal line 132, the second vertical signal line 134, the
third vertical signal line 136, the fourth vertical signal line
138, the pixel structures 140, the first shielding vertical line
150B and the common electrode line 160, and detail thereof is not
repeated. To be specific, a difference between the present
embodiment and the embodiment of FIG. 2 is that the electronic
device 100B further includes the second shielding vertical line
152B, and a length design of the first shielding vertical line 150B
is different.
[0070] In the embodiment, the first shielding vertical line 150B is
located between the first vertical signal line 132 and the second
vertical signal line 134, and the second shielding vertical line
152B is located between the third vertical signal line 136 and the
fourth vertical signal line 138. In other words, the first vertical
signal line 132 is located between the first shielding vertical
line 150B and the second shielding vertical line 152B, and the
third vertical signal line 136 is located between the first
vertical signal line 132 and the second shielding vertical line
152B. The pixel structure 140 includes the active device 142 and
the pixel electrode 144, and the second shielding vertical line
152B and the first shielding vertical line 150B are located on two
opposite sides of the pixel electrode 144. In addition, the pixel
electrode 144 may traverse the first shielding vertical line 150B
and the second shielding vertical line 152B and extend to the
second vertical signal line 134 and the fourth vertical signal line
138. In some embodiments, the first shielding vertical line 150B
and the second shielding vertical line 152B are, for example,
distributed symmetrically by the pixel structure 140. Namely, a
distance between the first shielding vertical line 150B and a
central axis of the pixel electrode 144 may be substantially the
same as a distance between the second shielding vertical line 152B
and the central axis of the pixel electrode 144, but the disclosure
is not limited thereto.
[0071] In the embodiment, the first shielding vertical line 150B
and the second shielding vertical line 152B may both traverse the
first line 162 of the common electrode line 160, but are not
intersected with the second line 164 of the common electrode line
160. In some embodiments, the first shielding vertical line 150B
and the second shielding vertical line 152B may be separated from
the second line 164 by a distance. However, in other embodiments,
the first shielding vertical line 150B and the second shielding
vertical line 152B may both traverse the first line 162 and are
also overlapped with the second line 164. Alternatively, in other
embodiments, the first shielding vertical line 150B and the second
shielding vertical line 152B may be both overlapped with the second
line 164, but both separated from the first line 162 by a distance.
In overall, as long as the first shielding vertical line 150B and
the second shielding vertical line 152B may contact one or both of
the first line 162 and the second line 164, they may receive a
common potential to provide a shielding effect. In addition, the
second shielding vertical line 152B may be a transparent conductive
pattern, so that the pixel structure 140 may also provide effective
display in an area of the second shielding vertical line 152B
without reducing an effective display area of the pixel structure
140 due to the arrangement of the second shielding vertical line
152B.
[0072] FIG. 6 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100C of FIG. 6 is substantially similar to the electronic device
100B of FIG. 5, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100C may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, a first shielding
vertical line 150C, and a second shielding vertical line 152C. The
vertical signal lines 130 may include the first vertical signal
line 132, the second vertical signal line 134, the third vertical
signal line 136, and the fourth vertical signal line 138. The
aforementioned embodiments may be referred for the relative
relationship of the substrate 110, the transversal signal lines
120, the first vertical signal line 132, the second vertical signal
line 134, the third vertical signal line 136, the fourth vertical
signal line 138, the pixel structures 140, the first shielding
vertical line 150C, the second shielding vertical line 152C and the
common electrode line 160, and detail thereof is not repeated. To
be specific, a difference between the present embodiment and the
embodiment of FIG. 5 lies in different width designs of the first
shielding vertical line 150C and the second shielding vertical line
152C in the electronic device 100C.
[0073] In the embodiment, the first shielding vertical line 150C
has an extending portion 150C1 and an overlapping portion 150C2.
The extending portion 150C1 extends in a gap between the first
vertical signal line 132 and the second vertical signal line 134
and contacts the first line 162 of the common electrode line 160.
The overlapping portion 150C2 is connected to the extending portion
150C1 and overlapped with the first vertical signal line 132.
Moreover, the second shielding vertical line 152C also has an
extending portion 152C1 and an overlapping portion 152C2. The
extending portion 152C1 extends in a gap between the third vertical
signal line 136 and the fourth vertical signal line 138 and
contacts the first line 162 of the common electrode line 160. The
overlapping portion 152C2 is connected to the extending portion
152C1 and overlapped with the third vertical signal line 136. In
the embodiment, the overlapping portion 150C2 is connected to a
middle section of the extending portion 150C1, and the overlapping
portion 152C2 is connected to a middle section of the extending
portion 152C1, but the disclosure is not limited thereto.
[0074] FIG. 7 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100D of FIG. 7 is substantially similar to the electronic device
100C of FIG. 6, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100D may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, a first shielding
vertical line 150D, and a second shielding vertical line 152D. The
vertical signal lines 130 may include the first vertical signal
line 132, the second vertical signal line 134, the third vertical
signal line 136, and the fourth vertical signal line 138. The
aforementioned embodiments may be referred for the relative
relationship of the substrate 110, the transversal signal lines
120, the first vertical signal line 132, the second vertical signal
line 134, the third vertical signal line 136, the fourth vertical
signal line 138, the pixel structures 140, and the common electrode
line 160, and detail thereof is not repeated. To be specific, a
difference between the present embodiment and the embodiment of
FIG. 6 lies in different designs of overlapping portions of the
first shielding vertical line 150D and the second shielding
vertical line 152D in the electronic device 100D.
[0075] To be specific, the first shielding vertical line 150D has
an extending portion 150D1 and an overlapping portion 150D2. The
extending portion 150D1 extends in a gap between the first vertical
signal line 132 and the second vertical signal line 134 and
contacts the first line 162 of the common electrode line 160. The
overlapping portion 150D2 is connected to the extending portion
150D1 and overlapped with the first vertical signal line 132.
Moreover, the overlapping portion 150D2 of the first shielding
vertical line 150D may extend toward the second line 164 of the
common electrode line 160 to overlap the second line 164. The
second shielding vertical line 152D also has an extending portion
152D1 and an overlapping portion 152D2. The extending portion 152D1
extends in a gap between the third vertical signal line 136 and the
fourth vertical signal line 138 and contacts the first line 162 of
the common electrode line 160. The overlapping portion 152D2 is
connected to the extending portion 152D1 and overlapped with the
third vertical signal line 136. Moreover, the overlapping portion
152D2 of the second shielding vertical line 152D may extend toward
the second line 164 of the common electrode line 160 to overlap the
second line 164.
[0076] FIG. 8 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100E of FIG. 8 is substantially similar to the electronic device
100B of FIG. 5, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100E may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150B, the second shielding vertical line
152B, and a shielding transversal line 154E. The vertical signal
lines 130 may include the first vertical signal line 132, the
second vertical signal line 134, the third vertical signal line
136, and the fourth vertical signal line 138. The embodiment of
FIG. 5 may be referred for the relative relationship of the
substrate 110, the transversal signal lines 120, the first vertical
signal line 132, the second vertical signal line 134, the third
vertical signal line 136, the fourth vertical signal line 138, the
pixel structures 140, the first shielding vertical line 150B and
the common electrode line 160, and the arrangement method of the
first shielding vertical line 150B and the second shielding
vertical line 152B, and details thereof are not repeated. To be
specific, a difference between the present embodiment and the
embodiment of FIG. 5 is that the electronic device 100E further
includes the shielding transversal line 154E.
[0077] The shielding transversal line 154E extends transversally
from the first shielding vertical line 150B across the first
vertical signal line 132 and the third vertical signal line 136 and
is connected to the second shielding vertical line 152B. The
shielding transversal line 154E is connected to a middle section of
the first shielding vertical line 150B and is connected to a middle
section of the second shielding vertical line 152B, so that the
shielding transversal line 154E, the first shielding vertical line
150B and the second shielding vertical line 152B constitute an
H-shaped pattern. In the embodiment, the pixel electrode 144 of the
pixel structure 140, for example, has a horizontal trunk portion
MH, and an orthogonal projection of the shielding transversal line
154E on the substrate 110 may be overlapped with an orthogonal
projection of the horizontal trunk portion MH on the substrate 110,
but the disclosure is not limited thereto. Moreover, the shielding
transversal line 154E may be a transparent conductive pattern, so
that the pixel structure 140 may also provide effective display in
an area of the shielding transversal line 154E without reducing the
effective display area of the pixel structure 140 due to the
arrangement of the shielding transversal line 154E.
[0078] In some embodiments, since the shielding transversal line
154E connects the first shielding vertical line 150B and the second
shielding vertical line 152B, only one of the first shielding
vertical line 150B and the second shielding vertical line 152B may
be connected to the common electrode line 160. For example, only
one of the first shielding vertical line 150B and the second
shielding vertical line 152B may be connected to the first line 162
of the common electrode line 160, connected to the second line 164
of the common electrode line 160, or connected to both the first
line 162 and the second line 164 of the common electrode line
160.
[0079] FIG. 9 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100F of FIG. 9 is substantially similar to the electronic device
100E of FIG. 8, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100F may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150B, the second shielding vertical line
152B, the shielding transversal line 154E, and a third shielding
vertical line 156F. The vertical signal lines 130 may include the
first vertical signal line 132, the second vertical signal line
134, the third vertical signal line 136, and the fourth vertical
signal line 138. The embodiment of FIG. 2 may be referred for the
relative relationship of the substrate 110, the transversal signal
lines 120, the first vertical signal line 132, the second vertical
signal line 134, the third vertical signal line 136, the fourth
vertical signal line 138, the pixel structures 140, and the common
electrode line 160, and the embodiment of FIG. 5 may be referred
for the arrangement method of the first shielding vertical line
150B and the second shielding vertical line 152B, and the
embodiment of FIG. 8 may be referred for the arrangement method of
the shielding transversal line 154E, so that details thereof are
not repeated.
[0080] To be specific, a difference between the present embodiment
and the embodiment of FIG. 5 is that the electronic device 100F
further includes the third shielding vertical line 156F. The third
shielding vertical line 156F is located between the first shielding
vertical line 150B and the second shielding vertical line 152B. The
third shielding vertical line 156F may be connected to the
shielding transversal line 154E, and the third shielding vertical
line 156F may be intersected with the shielding transversal line
154E to form a cross shape, but the disclosure is not limited
thereto. In the embodiment, the pixel electrode 144 of the pixel
structure 140, for example, has the vertical trunk portion MV and
the horizontal trunk portion MH, where an orthogonal projection of
the third shielding vertical line 156F on the substrate 110 may be
overlapped with the orthogonal projection of the vertical trunk
portion MV on the substrate 110, and the orthogonal projection of
the shielding transversal line 154E on the substrate 110 may be
overlapped with the orthogonal projection of the horizontal trunk
portion MH on the substrate 110, but the disclosure is not limited
thereto. In addition, the shielding transversal lines 154E and the
third shielding vertical line 156F may be transparent conductive
patterns, so that the pixel structure 140 may also provide
effective display in an area of the shielding transversal line 154E
without reducing the effective display area of the pixel structure
140 due to the arrangement of the shielding transversal line 154E
and the third shielding vertical line 156F.
[0081] FIG. 10 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100G of FIG. 10 is substantially similar to the electronic device
100A of FIG. 2, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100G may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150A, and a shielding transversal line
154G. The vertical signal lines 130 may include the first vertical
signal line 132, the second vertical signal line 134, the third
vertical signal line 136, and the fourth vertical signal line 138.
The embodiment of FIG. 2 may be referred for the relative
relationship of the substrate 110, the transversal signal lines
120, the first vertical signal line 132, the second vertical signal
line 134, the third vertical signal line 136, the fourth vertical
signal line 138, the pixel structures 140, the first shielding
vertical line 150A and the common electrode line 160, and details
thereof are not repeated.
[0082] To be specific, a difference between the present embodiment
and the embodiment of FIG. 2 is that the electronic device 100G
further includes the shielding transversal line 154G. The shielding
transversal line 154G extends transversally from the first
shielding vertical line 150A across the first vertical signal line
132 and the shielding transversal line 154G is connected to an end
of the first shielding vertical line 150A. An orthogonal projection
of the shielding transversal line 154G on the substrate 110 may be
overlapped with an orthogonal projection of the second line 164 of
the common electrode line 160 on the substrate 110, and may be
completely positioned within the orthogonal projection of the
second line 164 of the common electrode line 160 on the substrate
110.
[0083] FIG. 11 is a schematic cross-sectional view of the
electronic device of FIG. 2 along a section line B-B according to
another embodiment of the disclosure. In FIG. 11, the common
electrode line 160, the shielding transversal line 154G, the
insulating layer I1, the vertical signal lines 130, the insulating
layer I2, the filter layer CF, the insulating layer I3, and the
pixel electrode 144 are sequentially stacked on the substrate 110,
where the shielding transversal line 154G and the first shielding
vertical line 150A are of the same film layer. The related
descriptions of FIG. 3 and FIG. 4 may be referred for the material
of each film layer of the embodiment, and details thereof are not
repeated. Moreover, in the cross section of FIG. 11, a section SEC1
represents a stacking order of each of the film layers when the
shielding transversal line 154G is overlapped with both the
vertical signal lines 130 and the common electrode line 160.
Meanwhile, a section SEC2 represents a stacking order of each of
the film layers when the first shielding vertical line 150A and the
shielding transversal line 154G are overlapped with the common
electrode line 160, where a number of the film layers in the
section SEC2 and the stacking order of the film layers are
substantially the same as the cross-sectional structure of FIG. 3.
In the section SEC1, the shielding transversal line 154G and the
first vertical signal line 132 are overlapped in a thickness
direction. However, the insulating layer I1 is disposed between the
shielding transversal line 154G and the first vertical signal line
132. Therefore, the shielding transversal line 154G and the first
vertical signal line 132 will not be short circuited with each
other.
[0084] FIG. 12 is a schematic cross-sectional view of the
electronic device of FIG. 2 along the section line B-B according to
another embodiment of the disclosure. In FIG. 12, the shielding
transversal line 154G, the common electrode line 160, the
insulating layer I1, the vertical signal lines 130, the insulating
layer I2, the filter layer CF, the insulating layer I3, and the
pixel electrode 144 are sequentially stacked on the substrate 110.
To be specific, a difference between the cross section of FIG. 12
and the cross section of FIG. 11 lies in a stacking order of the
shielding transversal line 154G and the common electrode line 160.
Therefore, related description of FIG. 11 may be referred for the
materials and a stacking relationship of the film layers in the
cross section of FIG. 12, and details thereof are not repeated. In
the cross section of FIG. 12, the section SEC1 represents a
stacking order of each of the film layers when the shielding
transversal lines 154G is overlapped with both the vertical signal
lines 130 and the common electrode line 160. Meanwhile, the section
SEC2 represents a stacking order of each of the film layers when
the first shielding vertical line 150A and the shielding
transversal line 154G are overlapped with the common electrode line
160, where a number of the film layers in the section SEC2 and the
stacking order of the film layers are substantially the same as the
cross-sectional structure of FIG. 4.
[0085] In the section SEC1 of FIG. 11 and FIG. 12, the overlapping
relationship between the shielding transversal line 154G and the
vertical signal lines 130 and the stacking order of the film layers
may be applied to any of the embodiments of FIG. 6 to FIG. 9. For
example, after the common electrode line 160 in the section SEC1 is
removed, it may be regarded as a cross-sectional structure where
the overlapping portions 150C2 and 150D2 are overlapped with the
first vertical signal line 132 in the embodiments of FIG. 6 and
FIG. 7. For example, the cross-sectional structure where the
overlapping portions 150C2 and 150D2 are overlapped with the first
vertical signal line 132 may include the sequentially stacked
substrate 110, the overlapping portion 150C2 or 150D2, the
insulating layer I1, the first vertical signal line 132, the
insulating layer I2, the filter layer CF, the insulating layer I3
and the pixel electrode 144. The cross-sectional structure where
the overlapping portions 152C2 and 152D2 are overlapped with the
third vertical signal line 136 in the embodiments of FIG. 6 and
FIG. 7, and the cross-sectional structure where the shielding
transversal line 154E is overlapped with the first vertical signal
line 132 and the third vertical signal line 136 in the embodiments
of FIG. 8 and FIG. 9, for example, the cross-sectional structure
where the overlapping portions 150C2 and 150D2 are overlapped with
the third vertical signal line 136 may include the sequentially
stacked substrate 110, the overlapping portion 150C2 or 150D2, the
insulating layer I1, the third vertical signal line 136, the
insulating layer I2, the filter layer CF, the insulating layer I3
and the pixel electrode 144.
[0086] FIG. 13 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100H of FIG. 13 is substantially similar to the electronic device
100G of FIG. 10, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100H may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150A, the shielding transversal line 154G,
and a second shielding vertical line 152H. The vertical signal
lines 130 may include the first vertical signal line 132, the
second vertical signal line 134, the third vertical signal line
136, and the fourth vertical signal line 138. The aforementioned
embodiments may be referred for the relative relationship of the
substrate 110, the transversal signal lines 120, the first vertical
signal line 132, the second vertical signal line 134, the third
vertical signal line 136, the fourth vertical signal line 138, the
pixel structures 140, the first shielding vertical line 150A and
the common electrode line 160, and details thereof are not
repeated. To be specific, a difference between the present
embodiment and the embodiment of FIG. 10 is that the electronic
device 100H further includes the second shielding vertical line
152H.
[0087] In the embodiment, the first shielding vertical line 150A is
located between the first vertical signal line 132 and the second
vertical signal line 134, and the second shielding vertical line
152H is located between the third vertical signal line 136 and the
fourth vertical signal line 138. The shielding transversal line
154G is connected between an end of the first shielding vertical
line 150A and an end of the second shielding vertical line 152H to
form a U-shaped pattern, but the disclosure is not limited thereto.
The pixel structure 140 includes the active element 142 and the
pixel electrode 144, and the first shielding vertical line 150A and
the second shielding vertical line 152H are located on two opposite
sides of the pixel electrode 144. The pixel electrode 144 may
traverse the first shielding vertical line 150A and the second
shielding vertical line 152H. The first shielding vertical line
150A and the second shielding vertical line 152H are all made of
transparent conductive materials, so that the regions where the
first shielding vertical line 150A and the second shielding
vertical line 152H are located do not shield a display area of the
pixel structure 140, such that a display effect of the electronic
device 100H is ensured.
[0088] In the embodiment, the U-shaped pattern formed by connecting
the shielding transversal line 154G, the first shielding vertical
line 150A, and the second shielding vertical line 152H with each
other is, for example, overlapped with the first line 162 of the
common electrode line 160 as well the second line 164 of the common
electrode line 160, and the first shielding vertical line 150A and
the second shielding vertical line 152H even traverse the first
line 162, but the disclosure is not limited thereto. In some
embodiments, only one or two of the shielding transversal line
154G, the first shielding vertical line 150A, and the second
shielding vertical line 152H may be overlapped with and in contact
with the common electrode line 160. For example, the first
shielding vertical line 150A and the second shielding vertical line
152H may have different lengths, such that one of the first
shielding vertical line 150A and the second shielding vertical line
152H traverses the first line 162, and the other one is separated
from the first line 162 by a distance. Alternatively, in other
embodiments, the shielding transversal line 154G connected between
the first shielding vertical line 150A and the second shielding
vertical line 152H may not be overlapped with the second line
164.
[0089] FIG. 14 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100I of FIG. 14 is substantially similar to the electronic device
100H of FIG. 13, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100I may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150A, the shielding transversal line 154G,
the second shielding vertical line 152H, and the shielding
transversal line 154E. The vertical signal lines 130 may include
the first vertical signal line 132, the second vertical signal line
134, the third vertical signal line 136, and the fourth vertical
signal line 138. The aforementioned embodiments may be referred for
the relative relationship of the substrate 110, the transversal
signal lines 120, the first vertical signal line 132, the second
vertical signal line 134, the third vertical signal line 136, the
fourth vertical signal line 138, the pixel structures 140, the
first shielding vertical line 150A and the common electrode line
160, and details thereof are not repeated.
[0090] To be specific, a difference between the present embodiment
and the embodiment of FIG. 13 is that the electronic device 100I
further includes the shielding transversal line 154E, where the
arrangement of the shielding transversal line 154E is substantially
the same as the shielding transversal line 154E in FIG. 8. The
shielding transversal line 154E extends transversally from the
first shielding vertical line 150A across the first vertical signal
line 132 and the third vertical signal line 136 and is connected to
the second shielding vertical line 152H. The shielding transversal
line 154E is connected to a middle section of the first shielding
vertical line 150A and is connected to a middle section of the
second shielding vertical line 152H. The pixel electrode 144 of the
pixel structure 140, for example, has the horizontal trunk portion
MH and the vertical trunk portion MV, and the horizontal trunk
portion MH and the vertical trunk portion MV are intersected in a
cross shape, and an orthogonal projection of the shielding
transversal line 154E on the substrate 110 may be overlapped with
an orthogonal projection of the horizontal trunk portion MH on the
substrate 110, but the disclosure is not limited thereto.
[0091] FIG. 15 is partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100J of FIG. 15 is substantially similar to the electronic device
100I of FIG. 14, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100J may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, the first
shielding vertical line 150A, the shielding transversal line 154G,
the second shielding vertical line 152H, the shielding transversal
line 154E, and the third shielding vertical line 156F. The vertical
signal lines 130 may include the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, and the fourth vertical signal line 138. The aforementioned
embodiments may be referred for the relative relationship of the
substrate 110, the transversal signal lines 120, the first vertical
signal line 132, the second vertical signal line 134, the third
vertical signal line 136, the fourth vertical signal line 138, the
pixel structures 140, the first shielding vertical line 150A and
the common electrode line 160, so that details thereof are not
repeated.
[0092] To be specific, a difference between the present embodiment
and the embodiment of FIG. 13 is that the electronic device 100J
further includes the third shielding vertical line 156F, where the
arrangement of the third shielding vertical line 156F is
substantially the same as the third shielding vertical line 156F in
FIG. 9. The third shielding vertical line 156F is located between
the first shielding vertical line 150A and the second shielding
vertical line 152H. The third shielding vertical line 156F may be
connected to the shielding transversal line 154E, and the third
shielding vertical line 156F may be intersected with the shielding
transversal line 154E to form a cross shape, but the disclosure is
not limited thereto. In the embodiment, the pixel electrode 144 of
the pixel structure 140, for example, has the vertical trunk
portion MV and the horizontal trunk portion MH, where an orthogonal
projection of the third shielding vertical line 156F on the
substrate 110 may be overlapped with the orthogonal projection of
the vertical trunk portion MV on the substrate 110, and the
orthogonal projection of the shielding transversal line 154E on the
substrate 110 may be overlapped with the orthogonal projection of
the horizontal trunk portion MH on the substrate 110, but the
disclosure is not limited thereto.
[0093] FIG. 16 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100K of FIG. 16 is substantially similar to the electronic device
100H of FIG. 13, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100K may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, a first shielding
vertical line 150K, the shielding transversal line 154G, and a
second shielding vertical line 152K. The vertical signal lines 130
may include the first vertical signal line 132, the second vertical
signal line 134, the third vertical signal line 136, and the fourth
vertical signal line 138. The aforementioned embodiments may be
referred for the relative relationship of the substrate 110, the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, the pixel structures 140,
the first shielding vertical line 150A and the common electrode
line 160, and details thereof are not repeated.
[0094] To be specific, a layout and a pattern design of the first
shielding vertical line 150K and the second shielding vertical line
152K are substantially the same as those of the first shielding
vertical line 150C and the second shielding vertical line 152C of
FIG. 6. However, in the electronic device 100K, the first shielding
vertical line 150K, and the second shielding vertical line 152K may
extend to overlap the second line 164 of the common electrode line
160 and are connected by the shielding transversal line 154G at
both ends of the first shielding vertical line 150K and the second
shielding vertical line 152K.
[0095] The first shielding vertical line 150K has an extending
portion 150K1 and an overlapping portion 150K2. The extending
portion 150K1 extends in a gap between the first vertical signal
line 132 and the second vertical signal line 134 and contacts the
first line 162 and the second line 164 of the common electrode line
160. The overlapping portion 150K2 is connected to the extending
portion 150K1 and overlapped with the first vertical signal line
132. Moreover, the second shielding vertical line 152K also has an
extending portion 152K1 and an overlapping portion 152K2. The
extending portion 152K1 extends in a gap between the third vertical
signal line 136 and the fourth vertical signal line 138 and
contacts the first line 162 of the common electrode line 160. The
overlapping portion 152K2 is connected to the extending portion
152K1 and overlapped with the third vertical signal line 136. In
the embodiment, the overlapping portion 150K2 is connected to a
middle section of the extending portion 150K1, and the overlapping
portion 152K2 is connected to a middle section of the extending
portion 152K1, but the disclosure is not limited thereto.
[0096] FIG. 17 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100L of FIG. 17 is substantially similar to the electronic device
100H of FIG. 13, so that the aforementioned content may be referred
for the same components described in the two embodiments. The
electronic device 100L may include the substrate 110, a plurality
of the transversal signal lines 120, a plurality of the vertical
signal lines 130, the common electrode line 160, a first shielding
vertical line 150L, the shielding transversal line 154G, and a
second shielding vertical line 152L. The vertical signal lines 130
may include the first vertical signal line 132, the second vertical
signal line 134, the third vertical signal line 136, and the fourth
vertical signal line 138. The aforementioned embodiments may be
referred for the relative relationship of the substrate 110, the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, the pixel structures 140,
the first shielding vertical line 150A, and the common electrode
line 160, and details thereof are not repeated.
[0097] In the embodiment, a layout and a pattern design of the
first shielding vertical line 150L and the second shielding
vertical line 152L are substantially the same as those of the first
shielding vertical line 150D and the second shielding vertical line
152D of FIG. 7. The first shielding vertical line 150L may include
an extending portion 150L1 located between the first vertical
signal line 132 and the second vertical signal line 134 and an
overlapping portion 150L2 overlapped with the first vertical signal
line 132. The second shielding vertical line 152L may include an
extending portion 152L1 located between the third vertical signal
line 136 and the fourth vertical signal line 138 and an overlapping
portion 152L2 overlapped with the third vertical signal line 136.
Moreover, an end of the first shielding vertical line 150L and an
end of the second shielding vertical line 152L are connected by the
shielding transversal line 154G.
[0098] FIG. 18 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100M of FIG. 18 includes the substrate 110, a plurality of the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, a plurality of pixel
structures 140, a first shielding vertical line 150M, a second
shielding vertical line 152M, a shielding electrode 158M, and the
common electrode line 160 including the first line 162 and the
second line 164. In the embodiment, the substrate 110, the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, the pixel structures 140,
and the common electrode line 160 are substantially the same as
that of the embodiment of FIG. 2, so that the related descriptions
of FIG. 2 may be referred for detailed structures, materials and a
relative configuration relationship of the aforementioned
components, and details thereof are not repeated.
[0099] In FIG. 18, an orthogonal projection of the first shielding
vertical line 150M on the substrate 110 is located between the
orthogonal projection of the first vertical signal line 132 on the
substrate 110 and the orthogonal projection of the second vertical
signal line 134 on the substrate 110, and an orthogonal projection
of the second shielding vertical line 152M on the substrate 110 is
located between the orthogonal projection of the third vertical
signal line 136 on the substrate 110 and the orthogonal projection
of the fourth vertical signal line 138 on the substrate 110.
Moreover, the first shielding vertical line 150M and the second
shielding vertical line 152M are connected to the shielding
electrode 158M, and the first shielding vertical line 150M and the
second shielding vertical line 152M may extend toward the
corresponding transversal signal line 120 to traverse the first
line 162 of the common electrode line 160.
[0100] The shielding electrode 158M is, for example, an integral
electrode, and traverses the first vertical signal line 132 and the
third vertical signal line 134. The shielding electrode 158M is
substantially located between the second vertical signal line 134
and the fourth vertical signal line 138 without overlapping the
second vertical signal line 134 and the fourth vertical signal line
138. An orthogonal projection of the shielding electrode 158M on
the substrate 110 is overlapped with an orthogonal projection of
the pixel electrode 144 of the pixel structure 140 on the substrate
110. The shielding electrode 158M, the first shielding vertical
line 150M and the second shielding vertical line 152M are connected
as a whole, and are, for example, made of a transparent conductive
material. Therefore, although the shielding electrode 158M is
overlapped with most of the area of the pixel electrode 144, the
shielding electrode 158M does not affect the effective display area
of the pixel structure 140.
[0101] FIG. 19 is a partial schematic view of an electronic device
according to an embodiment of the disclosure. An electronic device
100N of FIG. 19 includes the substrate 110, a plurality of the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, a plurality of the pixel
structures 140 respectively including the active device 142 and the
pixel electrode 144, a first shielding vertical line 150N, a second
shielding vertical line 152N, and the common electrode line 160
including the first line 162 and the second line 164. In the
embodiment, configuration methods, structures and a stacking order
of the substrate 110, the transversal signal lines 120, the first
vertical signal line 132, the second vertical signal line 134, the
third vertical signal line 136, the fourth vertical signal line
138, the pixel structures 140, and the common electrode line 160
are substantially the same as that of the embodiment of FIG. 2, so
that the descriptions of FIG. 2 may be referred for details of the
above components.
[0102] In the embodiment, an orthogonal projection of the first
shielding vertical line 150N on the substrate 110 is located
between the orthogonal projection of the first vertical signal line
132 on the substrate 110 and the orthogonal projection of the
second vertical signal line 134 on the substrate 110, and an
orthogonal projection of the second shielding vertical line 152N on
the substrate 110 is located between the orthogonal projection of
the third vertical signal line 136 on the substrate 110 and the
orthogonal projection of the fourth vertical signal line 138 on the
substrate 110. Moreover, the first shielding vertical line 150N and
the second shielding vertical line 152N all traverse and intersect
the transversal signal lines 120 and the first line 162 and the
second line 164 of the common electrode line 160.
[0103] The transversal signal lines 120 and the common electrode
line 160 may be made of the same film layer, where the signals
transmitted by the transversal signal lines 120 are scan signals
provided to the active devices 142, and the signal transmitted by
the common electrode line 160 is a common potential. The first
shielding vertical line 150N and the second shielding vertical line
152N intersected with the transversal signal lines 120 and the
common electrode line 160 must avoid electrical short circuit with
the transversal signal lines 120 and the common electrode line 160.
Therefore, the film layers of the first shielding vertical line
150N and the second shielding vertical line 152N may be different
from the film layers of the transversal signal lines 120 and the
common electrode line 160. Moreover, in the embodiment, the first
shielding vertical line 150N and the second shielding vertical line
152N may be electrically connected to the common electrode line 160
through conducting structures TH to receive the common potential,
but the disclosure is not limited thereto. In some embodiments, the
conducting structures TH in the electronic device 100N may be
omitted, and the first shielding vertical line 150N and the second
shielding vertical line 152N may be extended to the driving circuit
of the electronic device 100N (such as the driving circuit IC shown
in FIG. 1), and the driving circuit directly provides the required
potential to the first shielding vertical line 150N and the second
shielding vertical line 152N.
[0104] FIG. 20 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along a section line
C-C according to another embodiment of the disclosure, and FIG. 21
is a schematic cross-sectional view illustrating a structure of the
electronic device of FIG. 19 along a section line D-D according to
an embodiment of the disclosure. According to FIG. 19, FIG. 20, and
FIG. 21, it is learned that the first shielding vertical line 150N,
an insulating layer I0, the common electrode line 160, the
insulating layer I1, the first vertical signal line 132, the
insulating layer I2, the filter layer CF, the insulating layer I3,
and the pixel electrode 144 are sequentially stacked on the
substrate 110. The materials of the insulating layer I0, the
insulating layer I1, the insulating layer I2, and the insulating
layer I3 may include inorganic insulating materials or organic
insulating materials, where the inorganic insulating materials
include silicon oxide, silicon nitride, or silicon oxynitride,
etc., and the organic insulating materials include polymethyl
methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol
(PVP) or polyimide (PI), etc. A material of the filter layer CF may
include a color filter material, such as a red filter material, a
green filter material, and a blue filter material. Materials of the
common electrode line 160 and the first vertical signal line 132
include metal or alloy. Materials of the first shielding vertical
line 150N and the pixel electrode 144 include a transparent
conductive material. In addition, the film layer of the transversal
signal lines 120 in FIG. 19 is the same as the film layer of the
common electrode line 160, and a stacking method of the second
shielding vertical line 152N in the cross-sectional structure in
FIG. 19 may be the same as that of the first shielding vertical
line 150N.
[0105] According to FIG. 20, it is learned that the conducting
structure TH may electrically connect the first shielding vertical
line 150N and the first line 162 of the common electrode line 160,
and the conducting structure TH is a conductor structure
penetrating the insulating layer I0. In this way, the film layer of
the first shielding vertical line 150N is different from the film
layer of the common electrode line 160 but the first shielding
vertical line 150N may be electrically connected to the common
electrode line 160. When the common electrode line 160 and the
transversal signal lines 120 are of the same film layer, the first
shielding vertical line 150N is not connected to the transversal
signal lines 120, and the transversal signal lines 120 and the
common electrode line 160 may maintain independent electrical
properties.
[0106] FIG. 22 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line C-C according to an embodiment of the disclosure, and FIG. 23
is a schematic cross-sectional view illustrating a structure of the
electronic device of FIG. 19 along the section line D-D according
to another embodiment of the disclosure. According to FIG. 19, FIG.
22, and FIG. 23, it is learned that the common electrode line 160,
the insulating layer I1, the first shielding vertical line 150N,
the insulating layer I2, the filter layer CF, the insulating layer
I3, and the pixel electrode 144 are sequentially stacked on the
substrate 110. The film layer of the transversal signal lines 120
in FIG. 19 is the same as the film layer of the common electrode
line 160, and the stacking method of the second shielding vertical
line 152N in the cross-sectional structure of FIG. 19 may be the
same as that of the first shielding vertical line 150N. In the
embodiment, the related descriptions of FIG. 20 and FIG. 21 may be
referred for the material of each film layer.
[0107] According to FIG. 22, it is learned that the conducting
structure TH may electrically connect the first shielding vertical
line 150N and the first line 162 of the common electrode line 160,
and the conducting structure TH is a conductor structure
penetrating the insulating layer I1. In this way, the film layer of
the first shielding vertical line 150N is different from the film
layer of the common electrode line 160 but the first shielding
vertical line 150N may be electrically connected to the common
electrode line 160. When the common electrode line 160 and the
transversal signal lines 120 are of the same film layer, the first
shielding vertical line 150N is not connected to the transversal
signal lines 120, and the transversal signal lines 120 and the
common electrode line 160 may maintain independent electrical
properties.
[0108] Moreover, in the embodiment, both the first vertical signal
line 132 and the first shielding vertical line 150N are sandwiched
between the insulating layer I1 and the insulating layer I2.
However, the first vertical signal line 132 and the first shielding
vertical line 150N may be made of different film layers. Therefore,
the first vertical signal line 132 and the first shielding vertical
line 150N may be components made of different materials. For
example, the material of the first vertical signal line 132 may
include metal, alloy, etc., and the material of the first shielding
vertical line 150N may include transparent conductive materials
such as metal oxides, organic conductive materials, etc.
[0109] FIG. 24 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line C-C according to still another embodiment of the disclosure,
and FIG. 25 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 19 along the section
line D-D according to still another embodiment of the disclosure.
According to FIG. 19, FIG. 24, and FIG. 25, it is learned that the
first line 162 and the second line 164 of the common electrode line
160, the insulating layer I1, the first vertical signal line 132,
the insulating layer I2, the first shielding vertical line 150N,
the filter layer CF, the insulating layer I3, and the pixel
electrode 144 are sequentially stacked on the substrate 110. The
film layer of the transversal signal lines 120 in FIG. 19 is the
same as the film layer of the common electrode line 160, and the
stacking method of the second shielding vertical line 152N in the
cross-sectional structure of FIG. 19 may be the same as that of the
first shielding vertical line 150N. In the embodiment, the related
descriptions of FIG. 20 and FIG. 21 may be referred for the
material of each film layer. In the embodiment, the film layer of
the first shielding vertical line 150N is disposed above the
insulating layer I2, and the film layer of the common electrode
line 160 is disposed below the insulating layer I1. Therefore, the
conducting structure TH used for electrically connecting the first
shielding vertical line 150N to the common electrode line 160 may
penetrate the insulating layer I1 and the insulating layer I2.
[0110] FIG. 20, FIG. 22, and FIG. 24 respectively show
implementations of the first shielding vertical line 150N in
different stacking orders, but the disclosure is not limited
thereto. In addition, the conducting structures TH may be omitted
in some embodiments, and the first shielding vertical line 150N and
the second shielding vertical line 152N may be extended to the
driving circuit disposed at periphery of the electronic device 100N
to receive the required signals.
[0111] FIG. 26 is a schematic top view of an electronic device
according to an embodiment of the disclosure. An electronic device
100O of FIG. 26 includes the substrate 110, a plurality of the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, a plurality of the pixel
structures 140 respectively including the active device 142 and the
pixel electrode 144, a first shielding vertical line 150O, a second
shielding vertical line 152O, and the common electrode line 160
including the first line 162 and the second line 164. In the
embodiment, configuration methods, structures and a stacking order
of the substrate 110, the transversal signal lines 120, the first
vertical signal line 132, the second vertical signal line 134, the
third vertical signal line 136, the fourth vertical signal line
138, the pixel structures 140, and the common electrode line 160
are substantially the same as that of the embodiment of FIG. 19, so
that the descriptions of FIG. 19 may be referred for details of the
above components.
[0112] In the embodiment, an orthogonal projection of the first
shielding vertical line 150O on the substrate 110 is located
between the orthogonal projection of the first vertical signal line
132 on the substrate 110 and the orthogonal projection of the
second vertical signal line 134 on the substrate 110, and an
orthogonal projection of the second shielding vertical line 152O on
the substrate 110 is located between the orthogonal projection of
the third vertical signal line 136 on the substrate 110 and the
orthogonal projection of the fourth vertical signal line 138 on the
substrate 110. The first shielding vertical line 150O and the
second shielding vertical line 152O are not overlapped with the
transversal signal lines 120, and not overlapped with the second
line 164 of the common electrode line 160.
[0113] Moreover, the film layer of the first shielding vertical
line 150O and the second shielding vertical line 152O may be
different from the film layer of the common electrode line 160. The
first shielding vertical line 150O and the second shielding
vertical line 152O may be connected to the first line 162 of the
common electrode line 160 through the conducting structures, so as
to receive the common potential. To be specific, the description of
FIG. 20 to FIG. 24 may be referred for the stacking method of the
first shielding vertical line 150O and the second shielding
vertical line 152O in the cross-sectional structure. In other
words, the cross-sectional structures of FIG. 20 to FIG. 24 may
also be used as implementations of the electronic device 100O.
[0114] FIG. 27 is a schematic top view of an electronic device
according to an embodiment of the disclosure. An electronic device
100P of FIG. 27 includes the substrate 110, a plurality of the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, a plurality of the pixel
structures 140 respectively including the active device 142 and the
pixel electrode 144, a first shielding vertical line 150P, a second
shielding vertical line 152P, a shielding transversal line 154P,
and the common electrode line 160 including the first line 162 and
the second line 164. In the embodiment, configuration methods,
structures and a stacking order of the substrate 110, the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, the pixel structures 140,
and the common electrode line 160 are substantially the same as
that of the embodiment of FIG. 2, so that the descriptions of FIG.
2 may be referred for details of the above components.
[0115] In the embodiment, an orthogonal projection of the first
shielding vertical line 150P on the substrate 110 is located
between the orthogonal projection of the first vertical signal line
132 on the substrate 110 and the orthogonal projection of the
second vertical signal line 134 on the substrate 110, and an
orthogonal projection of the second shielding vertical line 152P on
the substrate 110 is located between the orthogonal projection of
the third vertical signal line 136 on the substrate 110 and the
orthogonal projection of the fourth vertical signal line 138 on the
substrate 110. The shielding transversal line 154P extends
transversally from the first shielding vertical line 150P across
the first vertical signal line 132 and the third vertical signal
line 136, and the shielding transversal line 154P is connected
between the first shielding vertical line 150P and the second
shielding vertical line 152P. Moreover, an orthogonal projection of
the shielding transversal line 154P on the substrate 110 may be
overlapped with an orthogonal projection of the second line 164 of
the common electrode line 160 on the substrate 110.
[0116] FIG. 28 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 27 along a section line
E-E according to an embodiment of the disclosure. According to FIG.
27 and FIG. 28, it is learned that the first shielding vertical
line 150P, the shielding transversal line 154P, the insulating
layer I0, the common electrode line 160, the insulating layer I1,
the first vertical signal line 132, the insulating layer I2, the
filter layer CF, the insulating layer I3, and the pixel electrode
144 are sequentially stacked on the substrate 110. The materials of
the insulating layer I0, the insulating layer I1, the insulating
layer I2, and the insulating layer I3 may include inorganic
insulating materials or organic insulating materials, where the
inorganic insulating materials include silicon oxide, silicon
nitride, or silicon oxynitride, etc., and the organic insulating
materials include polymethyl methacrylate (PMMA), polyvinyl alcohol
(PVA), polyvinyl phenol (PVP) or polyimide (PI), etc. A material of
the filter layer CF may include a color filter material, such as a
red filter material, a green filter material, and a blue filter
material. Materials of the common electrode line 160 and the first
vertical signal line 132 include metal or alloy. Materials of the
first shielding vertical line 150P, the shielding transversal line
154P and the pixel electrode 144 include a transparent conductive
material. In addition, the film layer of the transversal signal
lines 120 in FIG. 27 is the same as the film layer of the common
electrode line 160, and a stacking method of the second shielding
vertical line 152P in the cross-sectional structure in FIG. 27 may
be the same as that of the first shielding vertical line 150P.
Moreover, according to FIG. 28, it is learned that the shielding
transversal line 154P and the first vertical signal line 132 are
overlapped in a thickness direction D3.
[0117] FIG. 29 is a schematic cross-sectional view illustrating a
structure of the electronic device of FIG. 27 along a section line
E-E according to an embodiment of the disclosure. According to FIG.
27 and FIG. 29, it is learned that the common electrode line 160,
the insulating layer I1, the first vertical signal line 132, the
insulating layer I2, the first shielding vertical line 150P, the
shielding transversal line 154P, the filter layer CF, the
insulating layer I3, and the pixel electrode 144 are sequentially
stacked on the substrate 110. The materials of the insulating layer
I1, the insulating layer I2, and the insulating layer I3 may
include inorganic insulating materials or organic insulating
materials, where the inorganic insulating materials include silicon
oxide, silicon nitride, or silicon oxynitride, etc., and the
organic insulating materials include polymethyl methacrylate
(PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or
polyimide (PI), etc. A material of the filter layer CF may include
a color filter material, such as a red filter material, a green
filter material, and a blue filter material. Materials of the
common electrode line 160 and the first vertical signal line 132
include metal or alloy. Materials of the first shielding vertical
line 150P, the shielding transversal line 154P and the pixel
electrode 144 include a transparent conductive material. In
addition, the film layer of the transversal signal lines 120 in
FIG. 27 is the same as the film layer of the common electrode line
160, and a stacking method of the second shielding vertical line
152P in the cross-sectional structure in FIG. 27 may be the same as
that of the first shielding vertical line 150P. In the embodiment,
the shielding transversal line 154P is overlapped with the first
vertical signal line 132 in the thickness direction D3, and at
least the insulating layer I2 is configured between the film layer
of the shielding transversal line 154P and the film layer of the
first vertical signal line 132. In this way, although the shielding
transversal line 154P is intersected with the first vertical signal
line 132, the two lines are not electrically connected to each
other.
[0118] FIG. 30 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. An electronic
device 100Q of FIG. 30 includes the substrate 110, a plurality of
the transversal signal lines 120, the first vertical signal line
132, the second vertical signal line 134, the third vertical signal
line 136, the fourth vertical signal line 138, a plurality of the
pixel structures 140 respectively including the active device 142
and the pixel electrode 144, a first shielding vertical line 150Q,
a second shielding vertical line 152Q, the shielding transversal
line 154G, and the common electrode line 160 including the first
line 162 and the second line 164. In the embodiment, configuration
methods, structures and a stacking order of the substrate 110, the
transversal signal lines 120, the first vertical signal line 132,
the second vertical signal line 134, the third vertical signal line
136, the fourth vertical signal line 138, the pixel structures 140,
and the common electrode line 160 are substantially the same as
that of the embodiment of FIG. 27, so that the descriptions of FIG.
27 may be referred for details of the above components.
[0119] In the embodiment, the first shielding vertical line 150Q is
located between the first vertical signal line 132 and the second
vertical signal line 134, and the second shielding vertical line
152Q is located between the third vertical signal line 136 and the
fourth vertical signal line 138. The first shielding vertical line
150Q and the second shielding vertical line 152Q may be
electrically connected to the first line 162 of the common
electrode line 160 through the conducting structures TH,
respectively. The first shielding vertical line 150Q and the second
shielding vertical line 152Q are not overlapped with the
transversal signal lines 120, and the shielding transversal line
154G is connected between an end of the first shielding vertical
line 150Q and an end of the second shielding vertical line 152Q to
form a U-shaped pattern, but the disclosure is not limited thereto.
Moreover, the transversal shielding line 154G may be overlapped
with the second line 164 of the common electrode line 160. The
cross-sectional structures of the first shielding vertical line
150Q, the second shielding vertical line 152Q and the shielding
transversal line 154G may be the same as that of the first
shielding vertical line 150P, the second shielding vertical line
152P and the shielding transversal line 154P in FIG. 28 and FIG.
29.
[0120] FIG. 31 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. FIG. 31
illustrates a substrate 210, a first vertical signal line 232, a
second vertical signal line 234, a third vertical signal line 236,
a pixel electrode 244 of a pixel structure 240, a first shielding
vertical line 250A, and a second shielding vertical line 252A of an
electronic device 200A. To be specific, the electronic device 200A
may be composed of the structures of FIG. 31 arranged in an array,
and the electronic device 200A may also include lines and circuit
structures such as transversal signal lines, active devices of the
pixel structures 240, etc., but in order to clearly describe the
configuration of the vertical lines, an omitted block BK is used in
FIG. 31 to indicate a location of the above components. In some
embodiments, the description of the embodiment of FIG. 2, etc., may
be referred for the configuration of the transversal signal lines
and the active devices, but the disclosure is not limited
thereto.
[0121] In the embodiment, the pixel electrode 244 may include a
first sub-electrode 244A and a second sub-electrode 244B, and the
first sub-electrode 244A and the second sub-electrode 244B are
respectively located on two opposite sides of the omitted block BK.
The first vertical signal line 232 and the third vertical signal
line 234 are located at periphery of the pixel electrode 244. The
second vertical signal line 234 is substantially overlapped with a
central trunk portion MV of the first sub-electrode 244A of the
pixel electrode 244. To be specific, an orthogonal projection of
the second vertical signal line 234 on the substrate 210 is
substantially overlapped with a center line of an orthogonal
projection of the first sub-electrode 244A on the substrate 110 and
also overlapped with a center line of an orthogonal projection of
the second sub-electrode 244B on the substrate 110. The first
shielding vertical line 250A and the second shielding vertical line
252A are respectively located on two opposite sides of the pixel
electrode 244. Meanwhile, an orthogonal projection of the first
shielding vertical line 250A on the substrate 210 is located
between an orthogonal projection of the first vertical signal line
232 on the substrate 210 and the orthogonal projection of the
second vertical signal line 234 on the substrate 210, and an
orthogonal projection of the second shielding vertical line 252A on
the substrate 210 is located between an orthogonal projection of
the third vertical signal line 236 on the substrate 210 and the
orthogonal projection of the second vertical signal line 234 on the
substrate 210.
[0122] FIG. 32 is a schematic cross-sectional view illustrating a
structure of the first shielding vertical line 250A in the
electronic device 200A of FIG. 31 according to an embodiment of the
disclosure. According to FIG. 32, it is learned that the first
shielding vertical line 250A, the insulating layer I1, the
insulating layer I2, and the pixel electrode 244 may be
sequentially stacked on the substrate 210. The materials of the
insulating layer I1 and the insulating layer I2 may include
inorganic insulating materials or organic insulating materials,
where the inorganic insulating materials include silicon oxide,
silicon nitride, or silicon oxynitride, etc., and the organic
insulating materials include polymethyl methacrylate (PMMA),
polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI),
etc. Materials of the first shielding vertical line 250A and the
pixel electrode 244 include a transparent conductive material. In
addition, the film layer of the first vertical signal line 232, the
second vertical signal line 234 and the third vertical signal line
236 in FIG. 31 may be disposed between the insulating layer I1 and
the insulating layer I2, and a stacking method of the second
shielding vertical line 252A in the cross-sectional structure of
FIG. 31 may be the same as that of the first shielding vertical
line 250A.
[0123] FIG. 33 is a schematic cross-sectional view illustrating a
structure of the first shielding vertical line 250A in the
electronic device 200A of FIG. 31 according to another embodiment
of the disclosure. According to FIG. 33, it is learned that the
first shielding vertical line 250A, the insulating layer I1, the
insulating layer I2, and the pixel electrode 244 may be
sequentially stacked on the substrate 210, and the filter layer CF
and the third insulating layer I3 may be further disposed between
the insulating layer I2 and the pixel electrode 244. In the
embodiment, the materials of the insulating layer I1, the
insulating layer I2 and the insulating layer I3 may include
inorganic insulating materials or organic insulating materials,
where the inorganic insulating materials include silicon oxide,
silicon nitride, or silicon oxynitride, etc., and the organic
insulating materials include polymethyl methacrylate (PMMA),
polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI),
etc. A material of the filter layer CF may include a color filter
material, such as a red filter material, a green filter material,
and a blue filter material. Materials of the first shielding
vertical line 250A and the pixel electrode 244 may include a
transparent conductive material. In addition, the film layer of the
first vertical signal line 232, the second vertical signal line 234
and the third vertical signal line 236 in FIG. 31 may be disposed
between the insulating layer I1 and the insulating layer I2, and a
stacking method of the second shielding vertical line 252A in the
cross-sectional structure of FIG. 31 may be the same as that of the
first shielding vertical line 250A.
[0124] In FIG. 33, the film layer of the first shielding vertical
line 250A is located between the insulating layer I1 and the
substrate 210. In some embodiments, the first shielding vertical
line 250A and the not-shown transversal signal line may be formed
by continuously stacked film layers, so that the first shielding
vertical line 250A may be connected to the transversal signal line
(not shown). Moreover, in other embodiments, the film layer of the
first shielding vertical line 250A may be selectively located
between the insulating layer I2 and the filter layer CF or between
the filter layer CF and the insulating layer I3.
[0125] FIG. 34 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. FIG. 34
illustrates the substrate 210, the first vertical signal line 232,
the second vertical signal line 234, the third vertical signal line
236, the pixel electrode 244 of the pixel structure 240, a first
shielding vertical line 250B, and a second shielding vertical line
252B of an electronic device 200B. To be specific, the electronic
device 200B may be composed of the structures of FIG. 34 arranged
in an array, and the electronic device 200B may also include lines
and circuit structures such as transversal signal lines, active
devices of the pixel structures 240, etc., but in order to clearly
describe the configuration of the vertical lines, an omitted block
BK is used in FIG. 34 to indicate a location of the above
components. In some embodiments, the description of the embodiment
of FIG. 2, etc., may be referred for the configuration of the
transversal signal lines and the active devices.
[0126] The electronic device 200B is similar to the electronic
device 200A, so that the same component symbols in the two
embodiments denote the same components for cross reference. To be
specific, a main difference between the electronic device 200B and
the electronic device 200A lies in a layout of the first shielding
vertical line 250B and the second shielding vertical line 252B. In
the embodiment, the pixel electrode 244 may include the first
sub-electrode 244A and the second sub-electrode 244B, and the first
sub-electrode 244A and the second sub-electrode 244B are located on
two opposite sides of the omitted block BK, and the first shielding
vertical line 250B and the second shielding vertical line 252B are
not overlapped with the second sub-electrode 244B. In other words,
the first shielding vertical line 250B and the second shielding
vertical line 252B are only overlapped with the first sub-electrode
244A. The first shielding vertical line 250B and the second
shielding vertical line 252B are located on two opposite sides of
the first sub-electrode 244A. The first shielding vertical line
250B is located between the first vertical signal line 232 and the
second vertical signal line 234, and the second shielding vertical
line 252B is located between the second vertical signal line 234
and the third vertical signal line 236. The descriptions of the
first shielding vertical line 250A in FIG. 32 and FIG. 33 may be
referred for a stacking order of the first shielding vertical line
250B and the second shielding vertical line 252B in the cross
section.
[0127] FIG. 35 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. FIG. 35
illustrates the substrate 210, the first vertical signal line 232,
the second vertical signal line 234, the third vertical signal line
236, the pixel electrode 244 of the pixel structure 240, a first
shielding vertical line 250C, and a second shielding vertical line
252C of an electronic device 200C. To be specific, the electronic
device 200C is similar to the electronic device 200A, so that the
same component symbols in the two embodiments denote the same
components for cross reference.
[0128] A main difference between the electronic device 200C and the
electronic device 200A lies in a layout of the first shielding
vertical line 250C and the second shielding vertical line 252C. In
the embodiment, the pixel electrode 244 may include the first
sub-electrode 244A and the second sub-electrode 244B, and the first
sub-electrode 244A and the second sub-electrode 244B are located on
two opposite sides of the omitted block, and the first shielding
vertical line 250C and the second shielding vertical line 252C are
not overlapped with the first sub-electrode 244A. In other words,
the first shielding vertical line 250C and the second shielding
vertical line 252C are only overlapped with the second
sub-electrode 244B. The first shielding vertical line 250C and the
second shielding vertical line 252C are located on two opposite
sides of the second sub-electrode 244B. The first shielding
vertical line 250C is located between the first vertical signal
line 232 and the second vertical signal line 234, and the second
shielding vertical line 252C is located between the second vertical
signal line 234 and the third vertical signal line 236. The
descriptions of the first shielding vertical line 250A in FIG. 32
and FIG. 33 may be referred for a stacking order of the first
shielding vertical line 250C and the second shielding vertical line
252C in the cross section.
[0129] FIG. 36 is a partial schematic top view of an electronic
device according to an embodiment of the disclosure. FIG. 36
illustrates a substrate 310, a first vertical signal line 332, a
second vertical signal line 334, a third vertical signal line 336,
a pixel electrode 344 of a pixel structure 340, a first shielding
vertical line 350A, and a second shielding vertical line 352A of an
electronic device 300A. To be specific, the electronic device 300A
may be composed of the structures of FIG. 36 arranged in an array,
and the electronic device 300A may also include lines and circuit
structures such as transversal signal lines, active devices of the
pixel structures 340, etc., but in order to clearly describe the
configuration of the vertical lines, an omitted block BK is used in
FIG. 36 to indicate a location of the above components. In some
embodiments, the description of the embodiment of FIG. 2, etc., may
be referred for the configuration of the transversal signal lines
and the active devices.
[0130] FIG. 36 illustrates two pixel structures 340, and the first
vertical signal line 332, the second vertical signal line 334, and
the third vertical signal line 336 are located between the two
pixel structures 340. The second vertical signal line 334 is
located between the first vertical signal line 332 and the third
vertical signal line 336. In the embodiment, an orthogonal
projection of the first shielding vertical line 350A on the
substrate 310 is located between an orthogonal projection of the
first vertical signal line 332 on the substrate 310 and an
orthogonal projection of the second vertical signal line 334 on the
substrate 310, and an orthogonal projection of the second shielding
vertical line 352A on the substrate 310 is located between the
orthogonal projection of the second vertical signal line 334 on the
substrate 310 and an orthogonal projection of the third vertical
signal line 336 on the substrate 310. Therefore, the orthogonal
projection of the first shielding vertical line 350A on the
substrate 310 is outside an orthogonal projection of the pixel
electrode 344 on the substrate 310, and the orthogonal projection
of the second shielding vertical line 352A on the substrate 310 is
outside the orthogonal projection of the pixel electrode 344 on the
substrate 310.
[0131] In the embodiment, the first shielding vertical line 350A
and the second shielding vertical line 352A are, for example,
transparent wires. In other words, the first shielding vertical
line 350A and the second shielding vertical line 352A are made of
transparent conductive materials. In addition, the pixel electrode
344 is also made of a transparent material. In some embodiments,
the pixel electrode 344, the first shielding vertical line 350A,
and the second shielding vertical line 352A may be of the same film
layer, but in other embodiments, the film layer of the pixel
electrode 344 may be different from the film layer of the first
shielding vertical line 350A and the second shielding vertical line
352A.
[0132] FIG. 37 is a schematic cross-sectional view illustrating a
structure of the first shielding vertical line 350A in the
electronic device 300 according to an embodiment of the disclosure.
According to FIG. 37, it is learned that the insulating layer I1,
the insulating layer I2, the first shielding vertical line 350A,
and the insulating layer I3 may be sequentially stacked on the
substrate 310. The materials of the insulating layer I1, the
insulating layer I2 and the insulating layer I3 may include
inorganic insulating materials or organic insulating materials,
where the inorganic insulating materials include silicon oxide,
silicon nitride, or silicon oxynitride, etc., and the organic
insulating materials include polymethyl methacrylate (PMMA),
polyvinyl alcohol (PVA), polyvinyl phenol (PVP) or polyimide (PI),
etc. The first shielding vertical line 350A disposed between the
insulating layer I2 and the insulating layer I3 may be made of, for
example, a transparent conductive material. In the embodiment, the
film layer of the first vertical signal line 332, the second
vertical signal line 334 and the third vertical signal line 336 may
be located between the insulating layer I1 and the insulating layer
I2, and the film layer of the not-shown transversal signal lines
may be located between the substrate 310 and the insulating layer
I1. Moreover, the film layer of the pixel electrode 344 may be
located on the insulating layer I3. In other words, the insulating
layer I3 may be disposed between the film layer of the pixel
electrode 344 and the film layer of the first shielding vertical
line 350A.
[0133] FIG. 38 is a schematic cross-sectional view illustrating a
structure of the first shielding vertical line 350A in the
electronic device 300 according to another embodiment of the
disclosure. The cross-sectional structure of FIG. 38 is similar to
the cross-sectional structure of FIG. 37, so that the same
component symbols in the two embodiments denote the same
components. According to FIG. 38, it is learned that the insulating
layer I1, the insulating layer I2, the first shielding vertical
line 350A, the filter layer CF, and the insulating layer I3 may be
sequentially stacked on the substrate 310. The related description
of FIG. 37A may be referred for a stacking order and materials of
the insulating layer I1, the insulating layer I2, the first
shielding vertical line 350A, and the insulating layer I3. A
material of the filter layer CF may include a color filter
material, such as a red filter material, a green filter material,
and a blue filter material.
[0134] FIG. 39 is a schematic cross-sectional view illustrating a
structure of the electronic device 300 according to another
embodiment of the disclosure. In FIG. 39, besides that the first
vertical signal line 332, the pixel electrode 344 and the first
shielding vertical line 350A in FIG. 36 are illustrated, the
transversal signal line 320 configured in the omitted block BK is
also illustrated to describe a stacking relationship of the
components in the electronic device 300. According to FIG. 39, it
is known that the transversal signal line 320, the insulating layer
I1, the first vertical signal line 332, the insulating layer I2,
and the pixel electrode 344 may be sequentially stacked on the
substrate 310, and the pixel electrode 344 and the first vertical
signal line 332 may be of the same film layer.
[0135] In summary, in the electronic device provided by the
embodiments of the disclosure, the shielding lines (such as the
first shielding vertical line, the second shielding vertical line,
etc.) are arranged between different signal lines. The shielding
lines may be connected to a common potential to provide a signal
shielding function, thereby reducing interference between the
signal lines. Therefore, the electronic device provided by the
embodiments of the disclosure may exhibit favorable quality.
[0136] It will be apparent to those skilled in the art that various
modifications and variations can be made to the disclosed
embodiments without departing from the scope or spirit of the
disclosure. In view of the foregoing, it is intended that the
disclosure covers modifications and variations provided that they
fall within the scope of the following claims and their
equivalents.
* * * * *