U.S. patent application number 16/623199 was filed with the patent office on 2020-12-03 for electrode, method of manufacturing the same, light-emitting device and display device.
The applicant listed for this patent is BOE Technology Group Co., Ltd.. Invention is credited to Xiaochuan Chen, Ning Cong, Can Wang, Minghua Xuan, Ming Yang, Han Yue, Can Zhang.
Application Number | 20200381652 16/623199 |
Document ID | / |
Family ID | 1000005036181 |
Filed Date | 2020-12-03 |
![](/patent/app/20200381652/US20200381652A1-20201203-D00000.png)
![](/patent/app/20200381652/US20200381652A1-20201203-D00001.png)
![](/patent/app/20200381652/US20200381652A1-20201203-D00002.png)
![](/patent/app/20200381652/US20200381652A1-20201203-D00003.png)
![](/patent/app/20200381652/US20200381652A1-20201203-D00004.png)
United States Patent
Application |
20200381652 |
Kind Code |
A1 |
Zhang; Can ; et al. |
December 3, 2020 |
ELECTRODE, METHOD OF MANUFACTURING THE SAME, LIGHT-EMITTING DEVICE
AND DISPLAY DEVICE
Abstract
An electrode, a method of manufacturing the same, a
light-emitting device, and a display device are provided, the
electrode includes: a reflective layer; and at least one
double-layer adjusting unit stacked on the reflective layer, each
double-layer adjusting unit comprising an insulating layer and a
conductive layer sequentially arranged in a direction away from the
reflective layer, a via hole is provided in the insulating layer,
an electrode lead formed integrally with the reflective layer is
provided in the via hole, and the conductive layer is electrically
connected to the reflective layer through the electrode lead, in
each double-laver adjusting unit, a difference between a thickness
of the conductive layer and a thickness of the insulating layer
does not exceed a set threshold, and the set threshold is
configured to control the thickness of the insulating layer.
Inventors: |
Zhang; Can; (Beijing,
CN) ; Chen; Xiaochuan; (Beijing, CN) ; Wang;
Can; (Beijing, CN) ; Yue; Han; (Beijing,
CN) ; Cong; Ning; (Beijing, CN) ; Yang;
Ming; (Beijing, CN) ; Xuan; Minghua; (Beijing,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
BOE Technology Group Co., Ltd. |
Beijing |
|
CN |
|
|
Family ID: |
1000005036181 |
Appl. No.: |
16/623199 |
Filed: |
August 1, 2019 |
PCT Filed: |
August 1, 2019 |
PCT NO: |
PCT/CN2019/098792 |
371 Date: |
December 16, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/56 20130101;
H01L 27/3206 20130101; H01L 51/5072 20130101; H01L 51/5218
20130101; H01L 51/5215 20130101; H01L 51/5092 20130101; H01L
51/5221 20130101; H01L 51/5056 20130101 |
International
Class: |
H01L 51/52 20060101
H01L051/52; H01L 27/32 20060101 H01L027/32; H01L 51/56 20060101
H01L051/56; H01L 51/50 20060101 H01L051/50 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 1, 2018 |
CN |
201810867144.5 |
Claims
1. An electrode, comprising: a reflective layer; and at least one
double-layer adjusting unit stacked on the reflective layer, each
double-layer adjusting unit comprising an insulating layer and a
conductive layer sequentially arranged in a direction away from the
reflective layer, wherein a via hole is provided in the insulating
layer, an electrode lead formed integrally with the reflective
layer is provided in the via hole, and the conductive layer is
electrically connected to the reflective layer through the
electrode lead, wherein in each double-layer adjusting unit, a
difference between a thickness of the conductive layer and a
thickness of the insulating, layer does not exceed a set threshold,
and the set threshold is configured to control the thickness of the
insulating layer.
2. (canceled)
3. The electrode according to claim 1, wherein the set threshold is
250 .ANG..
4. The electrode according to claim 1, wherein a thickness of the
insulating layer is not greater than 650 .ANG..
5. The electrode according to claim 1, wherein an optical path of
light in the electrode is calculated by the following formula:
.DELTA.=(X.sub.1.times.n.sub.11+Y.sub.1.times.n.sub.21)+. .
.+(X.sub.i.times.n.sub.1i+Y.sub.i.times.n.sub.2i)+. .
.+(X.sub.k.times.n.sub.1k+Y.sub.k.times.n.sub.2k), wherein A is the
optical path of the light in the electrode, X.sub.1 is a thickness
of the insulating layer included in a first double-layer adjusting
unit of the at least one double-layer adjusting unit, n.sub.11 is a
refractive index of the insulating layer included in the first
double-layer adjusting unit, Y.sub.1 is a thickness of the
conductive layer included in the first double-layer adjusting unit,
n.sub.21 is a refractive index of the conductive layer included in
the first double-layer adjusting unit, X.sub.i, is a thickness of
the insulating layer included in an i.sup.th double-layer adjusting
unit of the at least one double-layer adjusting unit, n.sub.1i is a
refractive index of the insulating layer included in the i.sup.th
double-layer adjusting unit, Y.sub.i is a thickness of the
conductive layer included in the i.sup.th double-layer adjusting
unit, n.sub.2i is a refractive index of the conductive layer
included in the i.sup.th double-layer adjusting unit, i is an
integer in the range of [1, k], k is the total number of the at
least one double-layer adjusting unit, and k is an integer which is
not less than 1.
6. The electrode according to claim 5, wherein X.sub.1=. . .
=X.sub.i=. . . =X.sub.k, and/or Y.sub.1=. . . =Y.sub.i=. . .
=Y.sub.k, and/or n.sub.11=. . . =n.sub.1i. . . =n.sub.1k, and/or
n.sub.21=. . . =n.sub.2i=. . . =n.sub.2k.
7. The electrode according to claim 5, wherein the insulating layer
included in each double-layer adjusting unit is made of SiN.sub.x
which has a refractive index of 1.5, and the conductive layer of
each double-layer adjusting unit is made of indium tin oxide which
has a refractive index of 1.8, and k=1, X.sub.1=500 .ANG.,
Y.sub.1=383 .ANG.; or k=2, X.sub.1=500 .ANG., X.sub.2=200 .ANG.,
Y.sub.1=442 .ANG., Y.sub.2=233 .ANG.; or k=2, X.sub.1=X.sub.2=500
.ANG., Y.sub.1=Y.sub.2=442 .ANG..
8. The electrode according to claim 1, wherein the reflective layer
comprises a shielding metal layer, and the conductive layer is a
transparent conductive material layer.
9. A method of manufacturing the electrode according to claim 1,
comprising: forming the reflective layer; and forming the at least
one double-layer adjusting unit on a surface of the reflective
layer, wherein each of the double-layer adjusting units comprises
the insulating layer and the conductive layer sequentially arranged
in the direction away from the reflective layer, the insulating
layer is provided with the via hole, the electrode lead is provided
in the via hole, the conductive layer is electrically connected to
the reflective layer through the electrode lead, and the electrode
lead is formed integrally with the conductive layer.
10. (canceled)
11. The method according to claim 9, wherein forming the at least
one double-layer adjusting unit on the surface of the reflective
layer comprises: forming the insulating layer on the surface of the
reflective layer; forming the via hole in the insulating layer; and
forming a conductive material layer on a surface of the insulating
layer away from the reflective layer, wherein a portion of the
conductive material layer on the surface of the insulating layer
away from the reflective layer forms the conductive layer, and a
portion of the conductive material layer filling the via hole forms
the electrode lead.
12. The method according to claim 11, wherein forming the via hole
in the insulating layer comprises: forming the via hole in the
insulating layer by an etching process.
13. A light-emitting device comprising the first electrode
according to claim 1.
14. The light-emitting device according to claim 13, further
comprising a second electrode and an electroluminescent functional
layer between the first electrode and the second electrode, wherein
the second electrode is a transflective electrode.
15. The light-emitting device according to claim 14, wherein the
electroluminescent functional layer comprises a first hole
injection layer, a first hole transport layer, a red light-emitting
layer, a green light-emitting layer, a first electron transport
layer, a charge generation layer, a second hole injection layer, a
second hole transport layer, a blue light-emitting layer, a second
electron transport layer, and a first electron injection layer
which are stacked sequentially.
16. The light-emitting device according to claim 15, wherein the
first electrode is an anode, the second electrode is a cathode, a
surface of the first electrode facing the second electrode is in
contact with the first hole injection layer, and a surface of the
second electrode facing the first electrode is in contact with the
first electron injection layer.
17. The light-emitting device according to claim 15, wherein the
first electrode is a cathode, the second electrode is an anode, a
surface of the first electrode facing the second electrode is in
contact with the first electron injection layer, and a surface of
the second electrode facing the first electrode is in contact with
the first hole injection layer.
18. A display device comprising at least one light-emitting device
according to claim 13.
19. The display device according to claim 18, comprising at least
three light-emitting devices, the at least three light-emitting
devices comprising a first color light-emitting device, a second
color light-emitting device, and a third color light-emitting
device, wherein a thickness of the first electrode included in the
first color light-emitting device, a thickness of the first
electrode included in the second color light-emitting device and a
thickness of the first electrode included in the third color
light-emitting device are different from one another.
20. The display device according to claim 19, wherein, the first
color light-emitting device is a red light-emitting device, the
second color light-emitting device is a green light-emitting
device, and the third color light-emitting device is a blue
light-emitting device, and the red light-emitting device, the green
light-emitting device, and the blue light-emitting device are
disposed in the same optical path period, and the thickness of the
first electrode included in the red light-emitting device, the
thickness of the first electrode included in the green
light-emitting device, and the thickness of the first electrode
included in the blue light-emitting device are sequentially
decreased.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a Section 371 National Stage Application
of International Application No. PCT/CN2019/098792, filed on Aug.
1, 2019, and claims the benefit of Chinese Patent Application No.
201810867144.5 filed on Aug. 1, 2018 in the National Intellectual
Property Administration of China, the whole disclosures of which
are incorporated herein by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to the field of OLED display
technologies, and in particular, to an electrode, a method of
manufacturing the same, a light-emitting device, and a display
device.
BACKGROUND
[0003] At present, in a display device for virtual reality display
or augmented reality display, a micro organic electroluminescent
display device is often used to display image. In order to make an
image displayed by the micro organic electroluminescent display
device closer to a real-world scene seen by naked eyes, it is
necessary to ensure that the image displayed by the micro organic
electroluminescent display device is not grainy after optical
magnification. When a pixel density (i.e., Pixel Per Inch,
abbreviated as PPI) of the micro organic electroluminescent display
device is greater than 2000, the image displayed by the micro
organic electroluminescent display device is less grainy after
optical magnification, which may satisfy people's requirements for
the quality of the image displayed by the micro organic
electroluminescent display device.
SUMMARY
[0004] An aspect of the present disclosure provides an electrode,
comprising: a reflective layer; and at least one double-layer
adjusting unit stacked on the reflective layer, each double-layer
adjusting unit comprising an insulating layer and a conductive
layer sequentially arranged in a direction away from the reflective
layer, wherein a via hole is provided in the insulating layer, an
electrode lead formed integrally with the reflective layer is
provided in the via hole, and the conductive layer is electrically
connected to the reflective layer through the electrode lead.
[0005] According to some exemplary embodiments of the present
disclosure, in each double-layer adjusting unit, a difference
between a thickness of the conductive layer and a thickness of the
insulating layer does not exceed a set threshold, and the set
threshold is configured to control the thickness of the insulating
layer.
[0006] According to some exemplary embodiments of the present
disclosure, the set threshold is 250 .ANG..
[0007] According to some exemplary embodiments of the present
disclosure, a thickness of the insulating layer is not greater than
650 .ANG..
[0008] According to some exemplary embodiments of the present
disclosure, an optical path of light in the electrode is calculated
by the following formula:
.DELTA.=(X.sub.1.times.n.sub.11+Y.sub.1.times.n.sub.21)+. .
.+(X.sub.i.times.n.sub.1i+Y.sub.i.times.n.sub.2i)+. .
.+(X.sub.k.times.n.sub.1k+Y.sub.k.times.n.sub.2k),
[0009] wherein .DELTA. is the optical path of the light in the
electrode, X.sub.1 is a thickness of the insulating layer included
in a first double-layer adjusting unit of the at least one
double-layer adjusting unit, n.sub.11 is a refractive index of the
insulating layer included in the first double-layer adjusting unit,
Y.sub.1 is a thickness of the conductive layer included in the
first double-layer adjusting unit, n.sub.21 is a refractive index
of the conductive layer included in the first double-layer
adjusting unit, X.sub.i is a thickness of the insulating layer
included in an i.sup.th double-layer adjusting unit of the at least
one double-layer adjusting unit, n.sub.1i is a refractive index of
the insulating layer included in the i.sup.th double-layer
adjusting unit, Y.sub.i is a thickness of the conductive layer
included in the i.sup.th double-layer adjusting unit, n.sub.2i is a
refractive index of the conductive layer included in the i.sup.th
double-layer adjusting unit, i is an integer in the range of [1,
k], k is the total number of the at least one double-layer
adjusting unit, and k is an integer which is not less than 1.
[0010] According to some exemplary embodiments of the present
disclosure, X.sub.1=. . . =X.sub.i=. . . =X.sub.k, and/or Y.sub.1=.
. . =Y.sub.i=. . . =Y.sub.k, and/or n.sub.11=. . . =n.sub.1i. . .
=n.sub.1k, and/or n.sub.21=. . . =n.sub.2i=. . . =n.sub.2k.
[0011] According to some exemplary embodiments of the present
disclosure, the insulating layer included in each double-layer
adjusting unit is made of SiN.sub.x which has a refractive index of
1.5, and the conductive layer of each double-layer adjusting unit
is made of indium tin oxide which has a refractive index of 1.8,
wherein k=1, X.sub.1=500 .ANG., Y.sub.1=383 .ANG.; or k=2,
X.sub.1=500 .ANG., X.sub.2=200 .ANG., Y.sub.1=442 .ANG.,
Y.sub.2=233 .ANG.; or k=2, X.sub.1=X.sub.2=500 .ANG.,
Y.sub.1=Y.sub.2=442 .ANG..
[0012] According to some exemplary embodiments of the present
disclosure, the reflective layer comprises a shielding metal layer,
and the conductive layer is a transparent conductive material
layer.
[0013] Another aspect of the present disclosure provides a method
of manufacturing the above electrode, comprising: forming the
reflective layer; and forming the at least one double-layer
adjusting unit on a surface of the reflective layer, wherein each
of the double-layer adjusting units comprises the insulating layer
and the conductive layer sequentially arranged in the direction
away from the reflective layer, the insulating layer is provided
with the via hole, the electrode lead is provided in the via hole,
the conductive layer is electrically connected to the reflective
layer through the electrode lead, and the electrode lead is formed
integrally with the conductive layer.
[0014] According to some exemplary embodiments of the present
disclosure, in each double-layer adjusting unit, a difference
between a thickness of the conductive layer and a thickness of the
insulating layer does not exceed a set threshold, the set threshold
is configured to control the thickness of the insulating layer.
[0015] According to some exemplary embodiments of the present
disclosure, forming the at least one double-layer adjusting unit on
the surface of the reflective layer comprises: forming the
insulating layer on the surface of the reflective layer; forming
the via hole in the insulating layer; and forming a conductive
material layer on a surface of the insulating layer away from the
reflective layer, wherein a portion of the conductive material
layer on the surface of the insulating layer away from the
reflective layer forms the conductive layer, and a portion of the
conductive material layer filling the via hole forms the electrode
lead.
[0016] According to some exemplary embodiments of the present
disclosure, forming the via hole in the insulating layer comprises:
forming the via hole in the insulating layer by an etching
process.
[0017] Another aspect of the present disclosure provides a
light-emitting device comprising the first electrode according to
the above embodiments.
[0018] According to some exemplary embodiments of the present
disclosure, the light-emitting device further comprises a second
electrode and an electroluminescent functional layer between the
first electrode and the second electrode, wherein the second
electrode is a transflective electrode.
[0019] According to some exemplary embodiments of the present
disclosure, the electroluminescent functional layer comprises a
first hole injection layer, a first hole transport layer, a red
light-emitting layer, a green light-emitting layer, a first
electron transport layer, a charge generation layer, a second hole
injection layer, a second hole transport layer, a blue
light-emitting layer, a second electron transport layer, and a
first electron injection layer which are stacked sequentially.
[0020] According to some exemplary embodiments of the present
disclosure, the first electrode is an anode, the second electrode
is a cathode, a surface of the first electrode facing the second
electrode is in contact with the first hole injection layer, and a
surface of the second electrode facing the first electrode is in
contact with the first electron injection layer.
[0021] According to some exemplary embodiments of the present
disclosure, the first electrode is a cathode, the second electrode
is an anode, a surface of the first electrode facing the second
electrode is in contact with the first electron injection layer,
and a surface of the second electrode facing the first electrode is
in contact with the first hole injection layer.
[0022] Another aspect of the present disclosure provides a display
device comprising at least one light-emitting device according to
the above embodiments.
[0023] According to some exemplary embodiments of the present
disclosure, the display device comprising at least three
light-emitting devices, the at least three light-emitting devices
comprising a first color light-emitting device, a second color
light-emitting device, and a third color light-emitting device,
wherein a thickness of the first electrode included in the first
color light-emitting device, a thickness of the first electrode
included in the second color light-emitting device and a thickness
of the first electrode included in the third color light-emitting
device are different from one another.
[0024] According to some exemplary embodiments of the present
disclosure, the first color light-emitting device is a red
light-emitting device, the second color light-emitting device is a
green light-emitting device, and the third color light-emitting
device is a blue light-emitting device, and the red light-emitting
device, the green light-emitting device, and the blue
light-emitting device are disposed in the same optical path period,
and the thickness of the first electrode included in the red
light-emitting device, the thickness of the first electrode
included in the green light-emitting device, and the thickness of
the first electrode included in the blue light-emitting device are
sequentially decreased.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The drawings described herein are used to provide a further
understanding of the present disclosure and constitute a part of
the present disclosure. The exemplary embodiments of the present
disclosure and the description thereof are used to explain the
present disclosure, and do not constitute an improper limitation on
the present disclosure. In the drawings:
[0026] FIG. 1 is a schematic view of a basic structure of an
electrode provided by some embodiments of the present
disclosure;
[0027] FIG. 2 is a schematic structural view of an electrode
provided by some embodiments of the present disclosure;
[0028] FIG. 3 is a schematic structural view of an electrode
provided by some embodiments of the present disclosure;
[0029] FIG. 4 is a schematic structural view of an electrode
provided by some embodiments of the present disclosure;
[0030] FIG. 5 is a flowchart of a method of manufacturing an
electrode provided by some embodiments of the present
disclosure;
[0031] FIG. 6 is a schematic structural view of a light-emitting
device provided by some embodiments of the present disclosure;
[0032] FIG. 7 is a schematic view of a specific structure of a
light-emitting device provided by some embodiments of the present
disclosure;
[0033] FIG. 8 is a schematic structural view of a display device
provided by some embodiments of the present disclosure; and
[0034] FIG. 9 is a light emission spectrum of RGB pixels in a
display device provided by some embodiments of the present
disclosure.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0035] The technical solutions in the embodiments of the present
disclosure will be clearly and completely described below with
reference to the drawings in the embodiments of the present
disclosure. Obviously, the described embodiments are only a part of
the embodiments of the present disclosure, but not all of the
embodiments. Based on the embodiments in the present disclosure,
all other embodiments obtained by those skilled in the art without
creative efforts should fall within the protection scope of the
present disclosure.
[0036] The PPI of a micro organic electroluminescent display device
manufactured by a full-color method using a combination of white
organic electroluminescent display technology and color film
technology (WOLED+CF) is greater than 2000. However, the color
gamut and brightness of the micro organic electroluminescent
display device manufactured by using WOLED+CF technology are not
good as the color gamut and brightness of the micro organic
electroluminescent display device manufactured by using a RGB side
by side technology. When the micro organic electroluminescent
display is manufactured by using the RGB side-by-side technology, a
metal mask process is required to manufacture the micro organic
electroluminescent display device, which results in a complicated
manufacturing process of the micro organic electroluminescent
display device.
[0037] Typically, in each of organic electroluminescent devices of
different colors included in the micro organic electroluminescent
display device, an anode, a cathode, and a structure therebetween
constitute an optical microcavity, so that the brightness and color
gamut of light emitted by the organic electroluminescent device is
optically enhanced by the optical microcavity. The anode included
in each organic electroluminescent device is generally composed of
a reflective layer, a conductive layer, and an insulating layer
located between the reflective layer and the conductive layer. A
via hole is formed in the insulating layer, and the reflective
layer is electrically connected to the conductive layer through the
via hole. Generally, the insulating layers of the anodes included
in the organic electroluminescent devices of different colors have
difference thicknesses, so that the light emitted by each of the
organic electroluminescent devices of different colors has a good
monochromaticity.
[0038] The inventors of the present disclosure have found through
research that, in the organic electroluminescent devices of
different colors included in the micro organic electroluminescent
display device, when the anode, the cathode, and the structure
therebetween constitute the optical microcavity, since the
insulating layer of the anode is relatively thick, it is impossible
to form a via hole in the insulating layer through a conventional
etching process. It is necessary to use expensive special
trepanning equipment to form a via hole in the insulating layer, so
that the cost of manufacturing the organic electroluminescent
device is relatively high. In addition, a thickness of the
conductive layer of the anode is relatively thin, and the
insulating layer is relatively thick. In this case, when the
conductive layer laps over the via hole to realize an electrical
connection between the conductive layer and the reflective layer,
an electrode lead formed by a portion of the conductive layer
lapping over the via hole is prone to fracture. In this regard, in
a conventional method, the via hole is first filled with a metal
material, and then the conductive layer is formed on the surface of
the insulating layer, so as to realize the electrical connection
between the conductive layer and the reflective layer. However, the
manufacture of the anode in this way is relatively complicated.
[0039] In view of this, some embodiments of the present disclosure
provide an electrode, as shown in FIG. 1, the electrode includes a
reflective layer 10 and at least one double-layer adjusting unit 11
stacked on the reflective layer 10. The double-layer adjusting unit
11 includes an insulating layer 111 and a conductive layer 112
which are sequentially arranged in a direction away from the
reflective layer 10. The insulating layer 111 is provided with a
via hole therein, and an electrode lead H formed integrally with
the conductive layer 112 is provided in the via hole. In
particular, in the double-layer adjusting unit, a difference
between a thickness of the conductive layer 112 and a thickness of
the insulating layer 111 does not exceed a set threshold, and the
set threshold is configured to control the thickness of the
insulating layer 111, so that the electrode lead H electrically
connected to the reflective layer 10 is formed in the via hole
while the conductive layer 112 is formed. By making the thickness
difference between the insulating layer and the conductive layer
not exceed the above-mentioned set threshold, the electrode lead H
electrically connected to the reflective layer 10 may be formed in
the via hole while the conductive layer 112 is formed without
changing the thickness of the conductive layer. In other words, the
above-mentioned set threshold value may indirectly control the
thickness of the insulating layer 111.
[0040] In some exemplary embodiments, the electrode provided by the
present disclosure includes two double-layer adjusting units
stacked on the reflective layer 10, as shown in FIG. 2, which are a
first double-layer adjusting unit 11 and a second double-layer
adjustment unit 12, respectively. The first double-layer adjusting
unit 11 includes a first insulating layer 111 and a first
conductive layer 112, and the second double-layer adjusting unit 12
includes a second insulating layer 121 and a second conductive
layer 122. A first electrode lead H1 which is formed integrally
with the first conductive layer 112 is provided in a via hole in
the first insulating layer 111, and a second electrode lead H2
which is formed integrally with the second conductive layer 122 is
provided in a via hole in the second insulating layer 121. A
difference between a thickness of the first conductive layer 112
and a thickness of the first insulating layer 111 does not exceed a
set threshold, and the set threshold is configured to control the
thickness of the first insulating layer 111 so that the first
electrode lead H1 electrically connected to the reflective layer 10
is formed in the via hole while the first conductive layer 112 is
formed. Similarly, a difference between a thickness of the second
conductive layer 122 and a thickness of the second insulating layer
121 does not exceed the set threshold, and the set threshold is
configured to control the thickness of the second insulating layer
121, so that the second electrode lead H2 electrically connected to
the first conductive layer 112 is formed in the via hole while the
second conductive layer 122 is formed.
[0041] In the embodiments shown in FIG. 2, the first double-layer
adjusting unit 11 and the second double-layer adjusting unit 12
have the same configuration, and an orthographic projection of the
first electrode lead H1 on the reflective layer 10 coincides with
an orthographic projection of the second electrode lead H2 on the
reflective layer 10.
[0042] Alternatively, in other embodiments, as shown in FIG. 3, the
orthographic projection of the first electrode lead H1 on the
reflective layer 10 is partially overlapped with the orthographic
projection of the second electrode lead H2 on the reflective layer
10. In still other embodiments, the orthographic projection of the
first electrode lead H1 on the reflective layer 10 may be not
overlapped with the orthographic projection of the second electrode
lead H2 on the reflective layer 10, as long as the second
conductive layer 122 is electrically connected to the first
conductive layer 112 through the second electrode lead H2, and the
first conductive layer 112 is electrically connected to the
reflective layer 10 through the first electrode lead H1.
[0043] Further alternatively, when the electrode includes two
double-layer adjusting units, as shown in FIG. 4, the first
double-layer adjusting unit 11 and the second double-layer
adjusting unit 12 have different configurations. For example, a
thickness of the second double-layer adjusting unit 12 may be
smaller than that of the first double-layer adjusting unit 11.
Similar to the embodiments shown in FIG. 2, the difference between
the thickness of the first conductive layer 112 and the thickness
of the first insulating layer 111 does not exceed the set threshold
which is configured to control the thickness of the first
insulating layer 111, so that the first electrode lead H1
electrically connected to the reflective layer 10 is formed in the
via hole while the first conductive layer 112 is formed. Similarly,
the difference between the thickness of the second conductive layer
122 and the thickness of the second insulating layer 121 does not
exceed a set threshold which is configured to control the thickness
of the second insulating layer 121, so that the second electrode
lead H2 electrically connected to the first conductive layer 112 is
formed in the via hole while the second conductive layer 122 is
formed.
[0044] It can be understood that the above-mentioned electrode may
be an anode or a cathode, which is specifically set according to an
applied environment. The reflective layer 10 may be made of a
light-shielding metal material, so that the reflective layer 10 may
be used to reflect light on one hand and may be used to supply
power to the electrode on the other hand. Typically, the reflective
layer 10 is made of aluminum, and of course, it may also be made of
other light-shielding metal materials. The insulating layer 111 is
made of a transparent insulating material, such as SiO.sub.2,
SiN.sub.x or the like. The conductive layer 112 is made of a
transparent conductive material, such as indium tin oxide,
aluminum-doped zinc oxide, fluorine-doped tin oxide or the
like.
[0045] In the above embodiments of the present disclosure, at least
one double-layer adjusting unit is stacked on the reflective layer
10, and in each double-layer adjusting unit, the difference between
the thickness of the conductive layer 112 and the thickness of the
insulating layer 111 does not exceed a set threshold. The set
threshold is configured to control the thickness of the insulating
layer 111 so that the electrode lead H electrically connected to
the reflective layer 10 is formed in the via hole while the
conductive layer 112 is formed. Therefore, after the via hole is
formed in the insulating layer 111, there is no need to first fill
the via hole with a metal material forming the electrode lead H. It
is only necessary to form a conductive material layer directly on a
surface of the insulating layer 111 facing away from the reflective
layer 10, so that the electrode Lead H made of a conductive
material may be formed in the via hole while the conductive layer
112 is formed on the surface of the insulating layer 111 facing
away from the reflective layer 10.
[0046] Further, if the via hole is filled with the metal material
for forming the electrode lead, the electrode lead formed of the
metal material will hinder the transmission of light so as to
interfere with the reflective light from the reflective layer,
causing an optical path of the light emitted to the reflective
layer in the same light-emitting device to fluctuate. In contrast,
in the electrode provided in the embodiments of the present
disclosure, although the electrode lead H is still disposed in the
via hole provided in the insulating layer 111, the electrode lead H
and the conductive layer 112 are formed in one film forming
process, so that the electrode lead H and the conductive layer 112
are made of the same material. Since the material of the conductive
layer 112 is a light-transmitting material, an interference of the
electrode lead H provided in the via hole provided in the
insulating layer 111 on the light is relatively small.
[0047] In the above-mentioned embodiments provided by the present
disclosure, when the difference between the thickness of the
conductive layer and the thickness of the insulating layer does not
exceed the set threshold in each double-layer adjusting unit, if
the thickness of the conductive layer is relatively thin, the
thickness of the insulating layer included in the double-layer
adjusting unit including the conductive layer is relatively thin.
In this case, the via hole may be formed in the insulating layer
through a general etching method (such as wet etching), no special
process is required to form the via hole in the insulation. The
inventors of the present disclosure have discovered through
research that when the difference between the thickness of the
conductive layer and the thickness of the insulating layer
described above does not exceed 250 .ANG. in each double-layer
adjusting unit, it is easier to adopt an etching process to form
the via hole in the insulating layer.
[0048] In some exemplary embodiments, when forming the via hole in
the above-mentioned insulating layer through a conventional etching
process, the thickness of the above-mentioned insulating layer is
less than 650 .ANG..
[0049] Optionally, when the electrode is applied to a
light-emitting device having an optical microcavity effect, the
thicknesses of the insulating layer and the conductive layer in the
electrode need to meet a requirement of the optical path of the
light. Based on this, the optical path of the light in the
electrode is calculated by the following formula:
.DELTA.=(X.sub.1.times.n.sub.11+Y.sub.1.times.n.sub.21)+. .
.+(X.sub.i.times.n.sub.1i+Y.sub.i.times.n.sub.2i)+. .
.+(X.sub.k.times.n.sub.1k+Y.sub.k.times.n.sub.2k),
[0050] wherein, .DELTA. is the optical path of the light in the
electrode, X.sub.1 is the thickness of the insulating layer 111
included in the first double-layer adjusting unit 11, n.sub.11 is
the refractive index of the insulating layer 111 included in the
first double-layer adjusting unit 11, Y.sub.1 is the thickness of
the conductive layer 112 included in the first double-layer
adjusting unit 11, n.sub.21 is the refractive index of the
conductive layer 112 included in the first double-layer adjusting
unit 11, and so on, X.sub.i is the thickness of the insulating
layer included in the i.sup.th double-layer adjusting unit,
n.sub.1i is the refractive index of the insulating layer included
in the i.sup.th double-layer adjusting unit, Y.sub.i is the
thickness of the conductive layer included in the i.sup.th
double-layer adjusting unit, and n.sub.2i is the refractive index
of the conductive layer included in the i.sup.th double-layer
adjusting unit, wherein, i is the serial number of the double-layer
adjusting unit, i is an integer in the range of [1, k], k is the
total number of double-layer adjusting units, and k is an integer
not less than 1.
[0051] The thicknesses of the insulating layers included in the
double-layer adjusting units may be the same or different. When the
thicknesses of the insulating layers included in the double-layer
adjusting units are the same, X.sub.1=. . .=X.sub.i=. .
.=X.sub.k.
[0052] Further, the materials of the insulating layers included in
the double-layer adjusting units may be the same or different. When
the materials of the insulating layers included in the double-layer
adjusting units are the same, n.sub.11=. . .=n.sub.1i=. .
.=n.sub.1k.
[0053] The thicknesses of the conductive layers included in the
double-layer adjusting units may be the same or different. When the
thicknesses of the conductive layers included in the double-layer
adjusting units are the same, Y.sub.1=. . .=Y.sub.i=. .
.=Y.sub.k.
[0054] Alternatively, the materials of the conductive layers
included in the double-layer adjusting units may be the same or
different. When the materials of the conductive layers included in
the double-layer adjusting units are the same, n.sub.21=. .
.=n.sub.2i=. . .=n.sub.2k.
[0055] In order to explain the optical path of the light in the
above electrodes in more detail, several specific examples are
given below. The following examples are only for illustration and
are not intended to be as a limitation.
[0056] In a conventional electrode, material of an insulating layer
is SiN.sub.x, and the refractive index of SiN.sub.x is 1.5,
material of an electrode layer is indium tin oxide, and the
refractive index of indium tin oxide is 1.8, and a thickness of the
electrode layer is 50 .ANG.. When a thickness of the insulating
layer is 2000 .ANG., the optical path of the light in the
conventional electrode is equal to 2000 .ANG..times.1.5+50
.ANG..times.1.8=3090 .ANG.. When the thickness of the insulating
layer is 1450 .ANG., the optical path of the light in the
conventional electrode is equal to 1450 .ANG..times.1.5 +50
.ANG..times.1.8=2265 .ANG.. When the thickness of the insulating
layer is 900 .ANG., the optical path of the light in the
conventional electrode is equal to 900 .ANG..times.1.5+50
.ANG..times.1.8=1440 .ANG..
[0057] In contrast, the material of the insulating layer included
in each of the double-layer adjusting units in the electrode
provided in the embodiments of the present disclosure may be
SiN.sub.x, the refractive index of SiN.sub.x is 1.5, and the
material of the conductive layer included in each of the
double-layer adjusting units in the electrode provided in the
embodiments of the present disclosure may be indium tin oxide, and
the refractive index of indium tin oxide is 1.8. If the optical
path of the light in the electrode provided by the embodiments of
the present disclosure is also made to be 3090 .ANG., then when
k=2, X.sub.1=X.sub.2=500 .ANG. and Y.sub.1=Y.sub.2=442 .ANG.. At
this time, the light-emitting device includes a first double-layer
adjusting unit 11 composed of a first insulating layer 111 and a
first conductive layer 112, and a second double-layer adjusting
unit 12 composed of a second insulating layer 121 and a second
conductive layer 122. A first electrode lead H1 is provided in a
first via hole, and a second electrode lead H2 is provided in a
second via hole.
[0058] Alternatively, if the optical path of the light in the
electrode provided by the embodiments of the present disclosure is
made to reach 2265 .ANG., then when k=2, X.sub.1=500 .ANG.,
X.sub.2=200 .ANG., Y.sub.1=442 .ANG., Y.sub.2=233 .ANG.. At this
time, the light-emitting device includes a first double-layer
adjusting unit 11 composed of a first insulating layer 111 and a
first conductive layer 112, and a second double-layer adjusting
unit 12 composed of a second insulating layer 121 and a second
conductive layer 122. The first double-layer adjusting unit 11 and
the second double-layer adjusting unit 12 have different
configurations. A first electrode lead H1 is provided in a first
via hole, and a second electrode lead H2 is provided in a second
via hole.
[0059] Alternatively, if the optical path of the light in the
electrode provided by the embodiments of the present disclosure is
made to reach 1440 .ANG., then when k=1, X.sub.1=500 .ANG. and
Y.sub.1=383 .ANG.. At this time, the light-emitting device includes
a first double-layer adjusting unit 11 composed of a first
insulating layer 111 and a first conductive layer 112. An electrode
lead H is provided in a via hole provided in the first insulating
layer 111.
[0060] Other embodiments of the present disclosure also provide a
method of manufacturing the above electrode. As shown in FIG. 5, in
step S100, a reflective layer is formed. Next, in step S200, at
least one double-layer adjusting unit is stacked on a surface of
the reflective layer. Each double-layer adjusting unit includes an
insulating layer and a conductive layer which are sequentially
arranged in a direction away from the reflective layer. A
difference between a thickness of the conductive layer and a
thickness of the insulating layer does not exceed a set threshold
in each double-layer adjusting unit. A via hole is formed in the
insulating layer of each double-layer adjusting unit, and an
electrode lead H formed integrally with the conductive layer of the
double-layer adjusting unit is formed in the via hole, so that the
conductive layer is electrically connected to the reflective layer
through the electrode lead H.
[0061] The beneficial effects of the method of manufacturing the
electrode provided by the embodiments of the present disclosure are
the same as the beneficial effects of the electrode provided by the
foregoing embodiments, and details are not described herein.
[0062] In some specific embodiments, forming the at least one
double-layer adjusting unit on the surface of the reflective layer
10 includes: forming an insulating layer on the surface of the
reflective layer; then, forming a via hole in the insulating layer,
for example, the via hole being formed in the insulating layer
through an etching process; then, integrally forming a conductive
material layer on the surface of the insulating layer away from the
reflective layer and in the via hole, a portion of the conductive
material layer on the surface of the insulating layer away from the
reflective layer forms the conductive layer, and a portion of the
conductive material layer filling the via hole forms the electrode
lead. The conductive layer is electrically connected to the
reflective layer through the electrode lead H.
[0063] Some embodiments of the present disclosure further provide a
light-emitting device, as shown in FIG. 6, including a first
electrode 1. In particular, the first electrode 1 is the electrode
provided by any one of the above embodiments.
[0064] The beneficial effects of the light-emitting device provided
by the embodiments of the present disclosure are the same as the
beneficial effects of the electrode provided by the foregoing
embodiments, and details are not described herein.
[0065] The light-emitting device further includes a second
electrode 2 and an electroluminescent functional layer 3 sandwiched
between the first electrode 1 and the second electrode 2. The
second electrode 2 is a transflective electrode, and light emitted
from the electroluminescent functional layer 3 is emitted from a
side of the second electrode 2. The reflective layer included in
the first electrode 1, the transflective electrode 2 and a
structure therebetween form an optical microcavity with relatively
strong adjustment function. During operation, the
electroluminescent functional layer 3 emits light under the action
of the first electrode 1 and the second electrode 2. The light
emitted by the electroluminescent functional layer 3 resonates in
the optical microcavity, so that the brightness and color gamut of
the light finally emitted from the transflective electrode are
improved to a certain extent.
[0066] When the first electrode 1 is an anode, the second electrode
2 is a cathode. When the first electrode 1 is a cathode, the second
electrode 2 is an anode.
[0067] In some specific embodiments, as shown in FIG. 7, when the
first electrode 1 is an anode and the second electrode 2 is a
cathode, the electroluminescent functional layer 3 includes a first
hole injection layer 31a1, a first hole transport layer 31b1, a red
light-emitting layer R, a green light-emitting layer G, a first
electron transport layer 32b1, a charge generation layer 30, a
second hole injection layer 31a2, a second hole transport layer
31b2, a blue light-emitting layer B, a second electron transport
layer 32b2, and a first electron injection layer 32a1 which are
sequentially stacked in an light emission direction.
[0068] Alternatively, when the first electrode 1 is a cathode and
the second electrode 2 is an anode, the electroluminescent
functional layer 3 has a reversed arrangement, that is, includes
the first electron injection layer 32a1, the second electrons
transport layer 32b2, the blue light-emitting layer B, the second
hole transport layer 31b2, the second hole injection layer 31a2,
the charge generation layer 30, the first electron transport layer
32b1, the green light-emitting layer G, the red light-emitting
layer R, the first hole transport layer 31b1 and the first hole
injection layer 31a1 which are sequentially stacked in the light
emission direction, such that a surface of the first electrode 1
facing the second electrode 2 is in contact with the first electron
injection layer 32a1, and a surface of the second electrode 2
facing the first electrode 1 is in contact with the first hole
injection layer 31a1.
[0069] In the light-emitting device shown in FIG. 6, a cavity
length of the optical microcavity of the light-emitting device may
be adjusted by adjusting at least one of the thickness of the
insulating layer 111 of the double-layer adjusting unit 11 included
in the first electrode 1 and the thickness of the conductive layer
112 of the double-layer adjusting unit 11 included in the first
electrode 1. That is, the optical path of light in the optical
microcavity may be adjusted. As the optical path of the light in
the optical microcavity gradually increases, the spectrum of light
emitted by the light-emitting device changes periodically. For
example, as the optical path of the light in the optical
microcavity gradually increases, the light -emitting device may
sequentially emits blue light, green light, and red light, and as
the optical path of the light in the optical microcavity continues
to increase, the light emitting device may sequentially emit blue
light, green light, and red light again. Each period of the change
of spectrum of light corresponds to an optical path range, and each
optical path range is referred as an optical path period.
[0070] Some embodiments of the present disclosure further provide a
display device. As shown in FIG. 8, the display device includes at
least one foregoing light-emitting device.
[0071] The beneficial effects of the display device provided by the
embodiments of the present disclosure are the same as the
beneficial effects of the foregoing electrodes, and details are not
described herein.
[0072] The display device provided in the foregoing embodiments may
be any product or component having a display function, such as a
mobile phone, a tablet computer, a television, a displayer, a
notebook computer, a digital photo frame, or a navigator.
[0073] In exemplary embodiments, in the above display device, the
electroluminescent functional layers 31 included in the
light-emitting devices have the same thickness, the second
electrodes 2 included in the light-emitting devices have the same
thickness, and the thickness of the first electrode 1 included in
each light-emitting device may be set according to the following
rules.
[0074] In some exemplary embodiments, as shown in FIG. 8, the
display device includes at least three light-emitting devices, and
the at least three light-emitting devices includes a first color
light-emitting device I, a second color light-emitting device II,
and a third color light-emitting device III. The thickness of the
first electrode 1 included in the first color light-emitting device
I, the thickness of the first electrode 1 included in the second
color light-emitting device II, and the thickness of the first
electrode 1 included in the third color light-emitting device III
are different from each other, so that light emitted by each of the
first color light-emitting device I, the second color
light-emitting device II and the third color light-emitting devices
III has a relatively good monochromaticity.
[0075] When the first color light-emitting device I, the second
color light-emitting device II, and the third color light-emitting
device III are located in the same optical path period, the
thickness of the first electrode 1 included in the first color
light-emitting device I, the thickness of the first electrode 1
included in the second color light-emitting device II, and the
thickness of the first electrode 1 included in the third color
light-emitting device III are arranged from large to small
according to an wavelength of the light emitted by the
corresponding light-emitting device. If a light-emitting device of
one color is located in a large optical path period, the thickness
of the first electrode 1 included in the light-emitting device of
the one color is greater than the thickness of the first electrode
1 included another light-emitting device of other color which is
located in a small optical path period, regardless of the
wavelength of the light emitted by the light-emitting device of the
one color.
[0076] In other words, when setting the thickness of the first
electrode included in each of the light-emitting devices of
different colors included in the display device, the optical path
period of each of the light-emitting devices is first determined,
the thickness of the first electrode included in each of the
light-emitting devices is set according to the order of the optical
path period from large to small Then the wavelength of the light
emitted by each of the light-emitting devices which are located in
the same optical path period is determined, the thickness of the
first electrode included in each of the light-emitting devices
which are located in the same optical path period is set according
to the order of the wavelength from large to small.
[0077] For example, the first color light-emitting device I is a
red light-emitting device, the second color light-emitting device
II is a green light-emitting device, and the third color
light-emitting device III is a blue light-emitting device. When the
red light-emitting device, the green light-emitting device, and the
blue light-emitting device are located in the same optical path
period, as shown in FIG. 8, the thickness of the first electrode 1
included in the red light-emitting device, the thickness of the
first electrode 1 included in the green light-emitting device, and
the thickness of the first electrode 1 included in the blue
light-emitting device are gradually decreased. Of course, if the
red light-emitting device and the green light-emitting device are
located in the first optical path period and the blue
light-emitting device is located in the second optical path period,
the thickness of the first electrode of the blue light-emitting
device is the largest, the thickness of the first electrode of the
red light-emitting device is the second, and the thickness of the
first electrode of the green light-emitting device is the
smallest.
[0078] For example, when the red light-emitting device, the green
light-emitting device, and the blue light-emitting device included
in the display device are located in the same optical path period,
in each of the red light-emitting device, the green light-emitting
device and the blue light-emitting device, the first electrode 1 is
an anode, the second electrode 2 is a transflective electrode
having a thickness of 120 .ANG., and the first electrode 1 is the
electrode provided in any of the foregoing embodiments. In the
first electrode 1, the material of each insulating layer is
SiN.sub.x, and the material of each conductive layer is indium tin
oxide. Further, the electroluminescent functional layers
respectively employed in the red light-emitting device, the green
light-emitting device, and the blue light-emitting device have the
same composition and the same thickness. Each of the
electroluminescent functional layers includes a first hole
injection layer 31a1 and a first hole transport layer 31b1, a red
light-emitting layer R, a green light-emitting layer G, a first
electron transport layer 32b1, a charge generation layer 30, a
second hole injection layer 31a2, a second hole transport layer
31b2, a blue light-emitting layer B, a second electron transport
layer 32b2 and a first electron injection layer 32a1 which are
sequentially stacked.
[0079] Specifically, the first hole injection layer 31a1 has a
thickness of 100 .ANG., the first hole transport layer 31b1 has a
thickness of 200 .ANG., the red light-emitting layer R has a
thickness of 250 .ANG., the green light-emitting layer G has a
thickness of 100 .ANG., the electron transport layer 32b1 has a
thickness of 200 .ANG., the charge generation layer 30 has a
thickness of 100 .ANG., the second hole injection layer 31a2 has a
thickness of 100 .ANG., the second hole transport layer 31b2 has a
thickness of 200 .ANG., the blue light-emitting layer B has a
thickness of 200 .ANG., the second electron transport layer 32b2
has a thickness of 200 .ANG., and the first electron injection
layer 32a1 has a thickness of 100 .ANG..
[0080] Table 1 shows a thickness parameter of each of the red
light-emitting device, the green light-emitting device, and the
blue light-emitting device which are included in the display device
provided by the embodiments of the present disclosure.
TABLE-US-00001 TABLE 1 a thickness parameter of each of a red
pixel, a green pixel and a blue pixel a thickness parameter of the
first electrode thickness of thickness of thickness of thickness of
type of the first the first the second the second light-emitting
insulating conductive insulating conductive device layer/.ANG.
layer/.ANG. layer/.ANG. layer/.ANG. red light- 500 442 500 442
emitting device green light- 500 442 200 233 emitting device blue
light- 500 383 / / emitting device
[0081] FIG. 9 illustrates a light emission curve of each
light-emitting device in the display device shown in FIG. 8,
wherein a is a light emission curve of the blue light-emitting
device, b is a light emission curve of the green light-emitting
device, and c is a light emission curve of the red light-emitting
device. It can be seen from FIG. 9 that, by adjusting the thickness
and the number of insulating layers of the first electrode included
in each of the red light-emitting device, the green light-emitting
device, and the blue light-emitting device, the adjustment
performance of the optical microcavity formed in each of the red
light-emitting device, the green light-emitting device and the blue
light-emitting device is enhanced. Thus, the monochromaticity and
brightness of the light emitted by each of the red light-emitting
device, the green light-emitting device, and the blue
light-emitting device is at a good level, thereby meeting the
requirements of the color gamut and brightness of the image
displayed by the display device. Moreover, when manufacturing the
light-emitting device included in the display device provided by
the embodiments of the present disclosure, the display effect of
the display device manufactured by the RGB full-color side-by-side
technology may be achieved without using the metal mask process
applied in the RGB full-color side-by-side technology. In addition,
when manufacturing the light-emitting device included in the
display device provided by the present disclosure, the
electroluminescent functional layer of each light-emitting device
has the same thickness, and the second electrode of each
light-emitting device has the same thickness, therefore, the
electroluminescent functional layer of each light-emitting device
may be manufactured by using the same mask (for example, by a
evaporation manner), and the second electrode of each
light-emitting device may be manufactured by using the same mask
(for example, by a sputtering manner).
[0082] In the description of the foregoing embodiments, specific
features, structures, materials, or characteristics may be combined
in an appropriate manner in any one or more embodiments or
examples.
[0083] The above are only specific implementations of the
disclosure, but the scope of protection of the disclosure is not
limited to this. Any changes or replacements that can be easily
obtained by those skilled in the art within the technical scope
disclosed in this disclosure shall be covered by the protection
scope of this disclosure. Therefore, the protection scope of the
present disclosure shall be subject to the protection scope of the
claims.
* * * * *