U.S. patent application number 16/354138 was filed with the patent office on 2020-09-17 for semiconductor memory device and word-line activation method.
The applicant listed for this patent is ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.. Invention is credited to Jian-Sing LIOU, Yi Heng LIU.
Application Number | 20200294570 16/354138 |
Document ID | / |
Family ID | 1000003947074 |
Filed Date | 2020-09-17 |
United States Patent
Application |
20200294570 |
Kind Code |
A1 |
LIU; Yi Heng ; et
al. |
September 17, 2020 |
SEMICONDUCTOR MEMORY DEVICE AND WORD-LINE ACTIVATION METHOD
Abstract
A semiconductor memory device includes a memory bank of an open
bit-line architecture and a word-line decoder. The memory bank is
divided into a plurality of memory blocks in a bit-line direction,
and each of the memory blocks includes a plurality of word lines, a
plurality of bit lines and a plurality of memory cells which are
grouped into a plurality of memory sections including two edge
memory sections and at least one non-edge memory section. The
word-line decoder generates a plurality of word-line enabling
signals based on a plurality of address signals and activates one
of the word lines for each of the two edge memory sections of one
of the memory blocks and one of the word lines for one of the at
least one non-edge memory section of each of the other memory
blocks concurrently in an active mode according to the word-line
enabling signals.
Inventors: |
LIU; Yi Heng; (HSINCHU CITY,
TW) ; LIOU; Jian-Sing; (HSINCHU CITY, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. |
HSINCHU CITY |
|
TW |
|
|
Family ID: |
1000003947074 |
Appl. No.: |
16/354138 |
Filed: |
March 14, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 5/10 20130101; G11C
11/4091 20130101; G11C 11/4087 20130101; G11C 11/4085 20130101 |
International
Class: |
G11C 11/408 20060101
G11C011/408; G11C 11/4091 20060101 G11C011/4091 |
Claims
1. A semiconductor memory device, comprising: a memory bank of an
open bit-line architecture, being divided into a plurality of
memory blocks in a bit-line direction, wherein each of the memory
blocks comprises a plurality of word lines, a plurality of bit
lines and a plurality of memory cells which are grouped into a
plurality of memory sections including two edge memory sections and
at least one non-edge memory section; and a word-line decoder
coupled with the memory bank and configured to: generate a
plurality of word-line enabling signals based on a plurality of
address signals; and activate one of the word lines for each of the
two edge memory sections of one of the memory blocks and one of the
word lines for one of the at least one non-edge memory section of
each of the other memory blocks concurrently in an active mode
according to the word-line enabling signals.
2. The semiconductor memory device of claim 1, wherein each of the
memory blocks comprises a plurality of sense amplifier arrays, and
in each of the memory blocks, each of the edge memory sections is
coupled with only one of the sense amplifier arrays and each of the
at least one non-edge memory sections is coupled with two of the
sense amplifier arrays.
3. The semiconductor memory device of claim 1, wherein the memory
blocks have the same number of memory cells.
4. The semiconductor memory device of claim 1, wherein the word
lines of each of the memory blocks are separate from those of the
other memory blocks.
5. The semiconductor memory device of claim 1, wherein each of the
memory cells comprises: a storage capacitor; and an access
transistor, coupled with the storage capacitor, one of the bit
lines and one of the word lines.
6. A word-line activation method for a memory bank of an open
bit-line architecture, the memory bank comprising a plurality of
memory blocks, each of memory blocks comprising a plurality of word
lines, a plurality of bit lines and a plurality of memory cells
which are grouped into a plurality of memory sections including two
edge memory sections and at least one non-edge memory section, the
word-line activation method comprising: generating, by a word-line
decoder, a plurality of word-line enabling signals based on a
plurality of address signals; and activating, by the word-line
decoder, one of the word lines for each of the two edge memory
sections of one of the memory blocks and one of the word lines for
one of the at least one non-edge memory section of each of the
other memory blocks concurrently in an active mode according to the
word-line enabling signals.
7. The word-line activation method of claim 6, wherein each of the
memory blocks comprises a plurality of sense amplifier arrays, and
in each of the memory blocks, each of the edge memory sections is
coupled with only one of the sense amplifier arrays and each of the
at least one non-edge memory sections is coupled with two of the
sense amplifier arrays.
8. The word-line activation method of claim 6, wherein the memory
blocks have the same number of memory cells.
9. The word-line activation method of claim 6, wherein the word
lines of each of the memory blocks are separate from those of the
other memory blocks.
10. The word-line activation method of claim 6, wherein each of the
memory cells comprises a storage capacitor and an access transistor
coupled with the storage capacitor, one of the bit lines and one of
the word lines.
Description
FIELD
[0001] The present disclosure relates to a semiconductor memory
device and a word-line activation method. More specifically, the
present disclosure relates to a semiconductor memory device
including a memory bank of an open bit-line architecture and a
word-line activation method for the memory bank.
BACKGROUND
[0002] FIG. 1A illustrates a schematic view of a conventional
memory bank of an open bit-line architecture, and FIG. 1B
illustrates a schematic view of a partial enlargement of the
conventional memory bank shown in FIG. 1A. As shown in FIGS. 1A-1B,
the conventional memory bank 11 comprises a plurality of memory
cells mc, a plurality of word lines WL, a plurality of pairs of bit
lines BL and /BL and a plurality of sense amplifier arrays AA. The
memory cells mc are grouped into a plurality of memory sections
including two edge memory sections E1 and E2 and one or more
non-edge memory sections N1, N2, . . . , Nx. Each of the memory
cells mc includes a storage capacitor C and an access transistor TS
coupled with the storage capacitor C, one bit line BL (or /BL) and
one word line WL. Only one word line WL can be activated for each
of the memory sections of the memory bank 11 at the same time to
prevent that more than one memory cell mc in the same row provide
data to the same sense amplifier concurrently.
[0003] Under the open bit-line architecture, each of the pairs of
bit lines BL and /BL is coupled to one sense amplifier and laid in
opposite directions from each other on either side of the sense
amplifier, and thus, each non-edge memory section is coupled with
two sense amplifier arrays AA, but each of the edge memory sections
E1 and E2 is coupled with one sense amplifier array AA only. Such
architecture brings a problem that each of the edge memory sections
E1 and E2 has only half of utilization rate of memory cells as
compared with anyone of the non-edge memory sections N1, N2, . . .
, Nx. To overcome this problem, two word lines are allowed to be
activated for both of the edge memory sections at the same time
with double current consumption for activating the two word lines.
For example, as eight-bit data is going to be written into the
conventional memory bank 11, one way is to activate one word line
(e.g., the word line WL_2) for one of the non-edge memory sections
N1, N2, . . . , Nx, while another way is to activate two word lines
(e.g., the word lines WL_1 and WL_n) for both of the edge memory
sections E1 and E2 with double current consumption for activating
the two word lines. In view of this, it is important to provide a
solution to improve the problem.
SUMMARY
[0004] The present disclosure provides a semiconductor memory
device. The semiconductor device can comprise a memory bank of an
open bit-line architecture and a word-line decoder coupled with the
memory bank. The memory bank can be divided into a plurality of
memory blocks in a bit-line direction, wherein each of the memory
blocks comprises a plurality of word lines, a plurality of bit
lines and a plurality of memory cells which are grouped into a
plurality of memory sections including two edge memory sections and
at least one non-edge memory section. The word-line decoder may be
configured to generate a plurality of word-line enabling signals
based on a plurality of address signals. The word-line decoder may
further be configured to activate one of the word lines for each of
the two edge memory sections of one of the memory blocks and one of
the word lines for one of the at least one non-edge memory section
of each of the other memory blocks concurrently in an active mode
according to the word-line enabling signals.
[0005] The present disclosure also provides a word-line activation
method for a memory bank of an open bit-line architecture. The
memory bank can comprise a plurality of memory blocks, and each of
memory blocks may comprise a plurality of word lines, a plurality
of bit lines and a plurality of memory cells which are grouped into
a plurality of memory sections including two edge memory sections
and at least one non-edge memory section. The word-line activation
method may comprise: generating, by a word-line decoder, a
plurality of word-line enabling signals based on a plurality of
address signals; and activating, by the word-line decoder, one of
the word lines for each of the two edge memory sections of one of
the memory blocks and one of the word lines for one of the at least
one non-edge memory section of each of the other memory blocks
concurrently in an active mode according to the word-line enabling
signals.
[0006] Instead of a whole memory bank, each memory block which is
organized by specifically dividing the whole memory bank in a
bit-line direction is a separate portion whose word lines can be
activated or deactivated without affecting those of the other
memory blocks. Under such a design, word lines can be activated for
both of two edge memory sections and at least one non-edge memory
section at the same time as the two edge memory sections and the at
least one non-edge memory section belong to different memory
blocks. In doing so, the two edge memory sections with half
utilization rate of a memory block can be improved by one or more
non-edge memory sections with full utilization rate of other memory
blocks, and thus, current consumption for activing word lines can
be improved as compared with the conventional memory bank 11.
[0007] The aforesaid content is not intended to limit the present
invention, but merely provides preliminary profile of the present
invention to people having ordinary skill in the art. People having
ordinary skill in the art can understand the details of the present
invention according to the attached drawings and the embodiments
recited in the following detailed description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1A illustrates a schematic view of a conventional
memory bank of an open bit-line architecture.
[0009] FIG. 1B illustrates a schematic view of a partial
enlargement of the conventional memory bank shown in FIG. 1A.
[0010] FIG. 2 illustrates a schematic view of a semiconductor
memory device according to one or more embodiments of the present
invention.
[0011] FIG. 3A illustrates a schematic view of a memory bank shown
in FIG. 2 according to one or more embodiments of the present
invention.
[0012] FIG. 3B illustrates a schematic view of a partial
enlargement of the memory bank shown in FIG. 3A.
[0013] FIG. 4 illustrates a schematic view of a word-line
activation method for a memory bank of an open bit-line
architecture according to one or more embodiments of the present
invention.
DETAILED DESCRIPTION
[0014] The example embodiments described herein are not intended to
limit the invention to any specific environment, applications,
structures, processes, embodiments, examples or steps described in
these example embodiments. In the attached drawings, elements
unrelated to the present invention are omitted from depiction.
Dimensions and dimensional relationships among individual elements
in the attached drawings are only exemplary examples and are not
intended to limit the present invention. Unless stated
particularly, same (or similar) element numerals may correspond to
same (or similar) elements in the following description.
[0015] The terminology used herein is for the purpose of describing
the embodiments only and is not intended to limit the present
invention. The singular forms "a" and "an" are intended to include
the plural forms as well, unless the context clearly indicates
otherwise. The terms "comprises," "comprising," "includes,"
"including," etc., specify the presence of the stated features,
integers, steps, operations, elements, and/or components, but do
not preclude the presence or addition of one or more other
features, integers, steps, operations, elements, components, and/or
groups thereof. The term "and/or" includes any and all combinations
of one or more of the associated listed items. Although the terms
"first," "second," "third," etc., may be used herein to describe
various elements, these elements should not be limited by these
terms. These terms are merely used to distinguish one element from
another element. Thus, for example, a first element described below
could also be termed a second element, without departing from the
spirit and scope of the present invention.
[0016] FIG. 2 illustrates a schematic view of a semiconductor
memory device according to one or more embodiments of the present
invention. FIG. 3A illustrates a schematic view of a memory bank
shown in FIG. 2 according to one or more embodiments of the present
invention, while FIG. 3B illustrates a schematic view of a partial
enlargement of the memory bank shown in FIG. 3A. The contents shown
in FIG. 2, FIG. 3A and FIG. 3B are merely for explaining the
embodiments of the present invention instead of limiting the
present invention.
[0017] Referring to FIG. 2, FIG. 3A and FIG. 3B together, a
semiconductor memory device 2 may comprise a memory bank 21 of an
open bit-line architecture and a word-line decoder 23 coupled with
the memory bank 21. The memory bank 21 is as similar as the
conventional memory bank 11, but the memory bank 21 is divided into
a plurality of memory blocks (e.g., the memory blocks 211 and 213)
in a bit-line direction. The word-line decoder 23 may be configured
to receive a plurality of address signals from an address buffer
(not shown) coupled with the word-line decoder 23 and generate the
word-line enabling signals based on the address signals. In
addition, the word-line decoder 23 may be configured to generate a
plurality of word-line enabling signals (e.g., the word-line
enabling signals 251 and 253), and transmit the word-line enabling
signals to the memory bank 21. Each of the word-line enabling
signals can activate one or more word lines coupled with the
corresponding memory block. For example, the word-line enabling
signal 251 can activate one or more word lines coupled with the
memory block 211 while the word-line enabling signal 253 can
activate one or more word lines coupled with the memory block
213.
[0018] In some embodiments, the semiconductor memory device 2 may
comprise a plurality of word-line decoders 23, which are configured
to generate the word-line enabling signals for activating the word
lines coupled with the memory blocks respectively.
[0019] Each of the memory blocks (e.g., the memory blocks 211 and
213) may comprise a plurality of word lines (e.g., the word lines
WL_11, WL_21, WL_n1 coupled with the memory block 211, and the word
lines WL_12, WL_22, WL_n2 coupled with the memory block 213), a
plurality of bit lines (e.g., the bit lines BL1, /BL1, BL3 and /BL3
coupled with the memory block 211, and the bit lines BL5, /BL5, BL7
and /BL7 coupled with the memory block 213) and a plurality of
memory cells mc which are grouped into a plurality of memory
sections including two edge memory sections (e.g., the edge memory
sections E11 and E21 of the memory block 211, and the edge memory
sections E12 and E22 of the memory block 213) and at least one
non-edge memory section (e.g., the non-edge memory sections N11,
N21, . . . , Nx1 of the memory bank 211, and the non-edge memory
sections N12, N22, Nx2 of the memory block 213). Each of the memory
cells mc may comprise a storage capacitor C and an access
transistor TS which is coupled with the storage capacitor C, one
bit line and one word line (e.g., the access transistor TS is
coupled with the bit line /BL1 and the word line WL_11 in the cell
of the edge memory sections E11). The word lines coupled with each
of the memory blocks are separate from those coupled with the
others. In addition, the memory blocks comprises the same number of
memory cells mc, which indicates that the memory bank 21 is equally
divided. In some embodiments, however, the memory blocks may
comprise different numbers of memory cells mc, which indicates that
the memory bank 21 may also be unequally divided.
[0020] Each of the memory blocks also comprises a plurality of
sense amplifier arrays AA, and depending on the number of memory
cells mc, each of the sense amplifier arrays AA may comprise two or
more sense amplifier. In addition, in each of the memory blocks,
each of the edge memory sections is only coupled with one single
sense amplifier array AA and each of the at least one non-edge
memory sections is coupled with two sense amplifier arrays AA. For
example, in the memory block 211, each of the edge memory sections
E11 and E21 is coupled with only one single sense amplifier array
AA, and each of the non-edge memory sections N11, N21, . . . , Nx1
is coupled with two sense amplifier arrays AA. Similarly, in the
memory block 213, each of the edge memory sections E12 and E22 is
coupled with only one single sense amplifier array AA, and each of
the non-edge memory sections N12, N22, . . . , Nx2 is coupled with
two sense amplifier arrays AA.
[0021] Under the structure of the memory bank 21, the word-line
decoder 23 may activate one word line for each of the two edge
memory sections of one of the memory blocks and activate one word
line for one of the at least one non-edge memory section of each of
the other memory blocks concurrently in an active mode according to
the word-line enabling signals. For example, as shown in FIG. 3, as
a piece of eight-bit data is going to be written into the memory
bank 21, the word-line decoder 23 may activate the word lines WL_11
and WL_n1 which are coupled with the edge memory sections E11 and
E21 respectively in the memory block 211 according to the word-line
enabling signals 251 and also activate the word line WL_22
connected with the non-edge memory section N12 in the memory block
213 according to the word-line enabling signals 253, in an active
mode at the same time. Only two memory cells mc can be accessed as
each of the word lines WL_11 and WL_n1 is activated while four
memory cells mc can be accessed as the word line WL_22 is
activated, and thus, the utilization rate (i.e. the number of the
accessed memory cells divided by that of the memory cells coupled
with the word lines WL_11, WL_n1 and WL_22) is 8/12. As compared
with the conventional memory bank 11 which activates with the word
lines WL_11, WL_n1 for writing the same piece of eight-bit data,
with a poor utilization rate of 8/16, the current consumption can
be decreased by 25% because only 75% word line current (i.e.,
12/16) is required. In addition, the utilization rate of memory
cells is improved by 1/6.
[0022] In some embodiments where the memory bank 21 is divided into
more than two memory blocks, the semiconductor memory device 2 can
still get less current consumption and better utilization rate of
memory cells as compared with the conventional memory bank 11
because of the proposed way of activating word lines. The details
of activating the word lines in these embodiments can be directly
and easily understood by the people having ordinary skills in the
art based on the above descriptions, and thus will not be further
described herein.
[0023] In some embodiments, the memory bank 21 may be divided into
a plurality of memory blocks which comprise different number of
memory cells mc with each other, which indicates that the memory
bank 21 is divided in an uneven manner. Under the circumstances,
the semiconductor memory device 2 can still get less current
consumption and better utilization rate of memory cells as compared
with the conventional memory bank 11 because of the proposed way of
activating word lines. The details of activating the word lines in
these embodiments can be directly and easily understood by the
people having ordinary skills in the art based on the above
descriptions, and thus will not be further described herein.
[0024] FIG. 4 illustrates a schematic view of a word-line
activation method for a memory bank of an open bit-line
architecture according to one or more embodiments of the present
invention. The contents shown in FIG. 4 are merely for explaining
the embodiments of the present invention instead of limiting the
present invention.
[0025] Referring to FIG. 4, a word-line activation method 4 for a
memory bank of an open bit-line architecture is shown. The memory
bank may comprise a plurality of memory blocks each of which
comprises a plurality of word lines, a plurality of bit lines and a
plurality of memory cells which are grouped into a plurality of
memory sections including two edge memory sections and at least one
non-edge memory section. The word-line activation method 4 may
comprise the following steps:
[0026] generating, by a word-line decoder, a plurality of word-line
enabling signals based on a plurality of address signals (marked
with a step 41); and
[0027] activating, by the word-line decoder, one of the word lines
for each of the two edge memory sections of one of the memory
blocks and one of the word lines for one of the at least one
non-edge memory section of each of the other memory blocks
concurrently in an active mode according to the word-line enabling
signals (marked with a step 43).
[0028] In some embodiments, each of the memory blocks may comprise
a plurality of sense amplifier arrays. Moreover, in each of the
memory blocks, each of the edge memory sections of may be coupled
with only one of the sense amplifier arrays and each of the at
least one non-edge memory sections may be coupled with two of the
sense amplifier arrays.
[0029] In some embodiments, the memory blocks may have the same
number of memory cells. In some embodiments, the word lines of each
of the memory blocks may be separate from those of the other memory
blocks. In some embodiments, each of the memory cells may comprise
a storage capacitor and an access transistor coupled with the
storage capacitor, one of the bit lines and one of the word
lines.
[0030] In addition to the aforesaid steps, in some embodiments, the
word-line activation method 4 may further comprise other steps
corresponding to the operations of the semiconductor memory device
2 as mentioned above. Since the steps which are not mentioned
specifically can be easily and directly understood by people having
ordinary skill in the art based on the aforesaid descriptions for
the semiconductor memory device 2, they will not be further
described herein.
[0031] The above disclosure is related to the detailed technical
contents and inventive features thereof. People having ordinary
skill in the art may proceed with a variety of modifications and
replacements based on the disclosures and suggestions of the
invention as described without departing from the characteristics
thereof. Nevertheless, although such modifications and replacements
are not fully disclosed in the above descriptions, they have
substantially been covered in the following claims as appended.
* * * * *