U.S. patent application number 16/652451 was filed with the patent office on 2020-09-10 for polishing liquid, polishing liquid set, polishing method, anddefect suppression method.
The applicant listed for this patent is HITACHI CHEMICAL COMPANY, LTD.. Invention is credited to Masayuki HANANO, Hisato TAKAHASHI, Toshio TAKIZAWA.
Application Number | 20200283659 16/652451 |
Document ID | / |
Family ID | 1000004901984 |
Filed Date | 2020-09-10 |
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United States Patent
Application |
20200283659 |
Kind Code |
A1 |
TAKAHASHI; Hisato ; et
al. |
September 10, 2020 |
POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, ANDDEFECT
SUPPRESSION METHOD
Abstract
A polishing liquid containing: abrasive grains containing at
least one selected from the group consisting of cerium oxide and
silicon oxide; a nitrogen-containing compound; and water, in which
the nitrogen-containing compound contains at least one selected
from the group consisting of (I) a compound having an aromatic ring
containing one nitrogen atom in the ring and a hydroxyl group, (II)
a compound having an aromatic ring containing one nitrogen atom in
the ring and a functional group containing a nitrogen atom, (III) a
compound having a 6-membered ring containing two nitrogen atoms in
the ring, (IV) a compound having a benzene ring and a ring
containing a nitrogen atom in the ring, and (V) a compound having a
benzene ring to which two or more functional groups containing a
nitrogen atom are bonded.
Inventors: |
TAKAHASHI; Hisato;
(Chiyoda-ku, Tokyo, JP) ; HANANO; Masayuki;
(Chiyoda-ku, Tokyo, JP) ; TAKIZAWA; Toshio;
(Chiyoda-ku, Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
HITACHI CHEMICAL COMPANY, LTD. |
Tokyo |
|
JP |
|
|
Family ID: |
1000004901984 |
Appl. No.: |
16/652451 |
Filed: |
October 1, 2018 |
PCT Filed: |
October 1, 2018 |
PCT NO: |
PCT/JP2018/036725 |
371 Date: |
May 21, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C08K 5/3462 20130101;
C08K 3/36 20130101; C08L 33/04 20130101; C09G 1/02 20130101; H01L
21/02068 20130101; C08K 2003/2213 20130101; C08L 33/02 20130101;
C08K 3/22 20130101; C08L 71/02 20130101; C08K 5/3412 20130101 |
International
Class: |
C09G 1/02 20060101
C09G001/02; C08K 3/22 20060101 C08K003/22; C08K 3/36 20060101
C08K003/36; C08K 5/3412 20060101 C08K005/3412; C08K 5/3462 20060101
C08K005/3462; C08L 33/02 20060101 C08L033/02; C08L 33/04 20060101
C08L033/04; C08L 71/02 20060101 C08L071/02 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 3, 2017 |
JP |
PCT/JP2017/035990 |
Claims
1. A polishing liquid comprising: abrasive grains containing at
least one selected from the group consisting of cerium oxide and
silicon oxide; a nitrogen-containing compound; and water, wherein
the nitrogen-containing compound contains at least one selected
from the group consisting of (I) a compound having an aromatic ring
containing one nitrogen atom in the ring and a hydroxyl group, (II)
a compound having an aromatic ring containing one nitrogen atom in
the ring and a functional group containing a nitrogen atom, (Ill) a
compound having a 6-membered ring containing two nitrogen atoms in
the ring, (IV) a compound having a benzene ring and a ring
containing a nitrogen atom in the ring, and (V) a compound having a
benzene ring to which two or more functional groups containing a
nitrogen atom are bonded.
2. The polishing liquid according to claim 1, wherein the
nitrogen-containing compound contains the compound (II).
3. The polishing liquid according to claim 1, wherein the
nitrogen-containing compound contains the compound (III).
4. The polishing liquid according to claim 1, wherein the
nitrogen-containing compound contains nicotinamide.
5. The polishing liquid according to claim 1, wherein the
nitrogen-containing compound contains aminopyridine.
6. The polishing liquid according to claim 1, wherein the
nitrogen-containing compound contains pyrazinamide.
7. The polishing liquid according to claim 1, further comprising a
polymer compound (A) having at least one selected from the group
consisting of a carboxylic acid group and a carboxylate group.
8. The polishing liquid according to claim 7, wherein a content of
the polymer compound (A) is 0.001 to 2% by mass.
9. The polishing liquid according to claim 1, further comprising a
nonionic polymer compound (B).
10. The polishing liquid according to claim 1, further comprising a
basic compound.
11. The polishing liquid according to claim 10, wherein a content
of the basic compound is 0.04 mol/kg or less.
12. The polishing liquid according to claim 1, wherein the abrasive
grains contain cerium oxide.
13. The polishing liquid according to claim 1, wherein the abrasive
grains contain silicon oxide.
14. The polishing liquid according to claim 1, wherein a content of
the abrasive grains is 0.01 to 20% by mass.
15. The polishing liquid according to claim 1, wherein a pH is 4.0
to 7.5.
16. The polishing liquid according to claim 1, wherein a pH is more
than 4.0.
17. A polishing liquid set comprising: constituent components of
the polishing liquid according to claim 1 stored while being
divided into a first liquid and a second liquid, the first liquid
containing the abrasive grains and water, the second liquid
containing the nitrogen-containing compound and water.
18. A polishing method comprising a step of polishing a surface to
be polished by using the polishing liquid according to claim 1.
19. The polishing method according to claim 18, wherein the surface
to be polished contains at least one selected from the group
consisting of polysilicon, amorphous silicon, and single-crystal
silicon.
20. The polishing method according to claim 18, wherein the surface
to be polished contains amorphous silicon.
21. A defect suppression method suppressing occurrence of defects
in polishing of a surface to be polished containing a stopper
material, the method comprising: a step of polishing a surface to
be polished by using the polishing liquid according to claim 1.
22. The defect suppression method according to claim 21, wherein
the stopper material contains at least one selected from the group
consisting of polysilicon, amorphous silicon, and single-crystal
silicon.
23. The defect suppression method according to claim 21, wherein
the stopper material contains amorphous silicon.
24. A polishing method comprising a step of polishing a surface to
be polished by using a polishing liquid obtained by mixing the
first liquid and the second liquid of the polishing liquid set
according to claim 17.
25. The polishing method according to claim 24, wherein the surface
to be polished contains at least one selected from the group
consisting of polysilicon, amorphous silicon, and single-crystal
silicon.
26. The polishing method according to claim 24, wherein the surface
to be polished contains amorphous silicon.
27. A defect suppression method suppressing occurrence of defects
in polishing of a surface to be polished containing a stopper
material, the method comprising: a step of polishing a surface to
be polished by using a polishing liquid obtained by mixing the
first liquid and the second liquid of the polishing liquid set
according to claim 17.
28. The defect suppression method according to claim 27, wherein
the stopper material contains at least one selected from the group
consisting of polysilicon, amorphous silicon, and single-crystal
silicon.
29. The defect suppression method according to claim 27, wherein
the stopper material contains amorphous silicon.
Description
TECHNICAL FIELD
[0001] The present invention relates to a polishing liquid, a
polishing liquid set, and a polishing method and a defect
suppression method which use the polishing liquid or the polishing
liquid set. More specifically, the present invention relates to a
polishing liquid, a polishing liquid set, and a polishing method
and a defect suppression method which use the polishing liquid or
the polishing liquid set, which can be used in a flattening step of
a base substrate surface, that is a production technique of a
semiconductor element (particularly, a flattening step of
interlayer insulating films, BPSG films (silicon dioxide films
doped with boron and phosphorus), or the like; a formation step of
shallow trench isolation (STI); and the like).
BACKGROUND ART
[0002] In current manufacturing processes of ULSI semiconductor
elements, research and development of processing techniques for
increasing the density and miniaturization of semiconductor
elements have been conducted. A flattening technique by chemical
mechanical polishing (CMP), that is one of the processing
techniques, has become an essential technique when a flattening
step of an interlayer insulating film or the like, an STI formation
step, a plug formation step, an embedded metal wiring formation
step (damascene step), and the like are performed in the
manufacturing processes of semiconductor elements. The CMP step
(the flattening step using the CMP technique) is generally
performed by polishing a material to be polished of a base
substrate while a polishing liquid for CMP is supplied between a
polishing pad (polishing cloth) and the material to be
polished.
[0003] In the CMP step, an insulating material is selectively
polished using a stopper (a polishing stop layer containing a
stopper material) in some cases. In this case, when the insulating
material that is a material to be polished is polished to expose
the stopper, the stopper is demanded to be stopped without being
polished. As the stopper material, polysilicon, amorphous silicon,
single-crystal silicon, and the like have been reviewed. In this
case, as for the polishing liquid for CMP, it is demanded that a
polishing rate of the stopper material is suppressed as much as
possible and a polishing rate ratio of the insulating material with
respect to the stopper material (polishing selectivity: the
polishing rate of the insulating material/the polishing rate of the
stopper material) is high (for example, see Patent Literature 1
described below).
CITATION LIST
Patent Literature
[0004] Patent Literature 1: Japanese Patent No. 4872919
SUMMARY OF INVENTION
Technical Problem
[0005] The stopper material is used, for example, as an
electrically conductive material of semiconductor devices (a gate
of a transistor, or the like) in some cases. In this case, after
the CMP step, when defects (for example, recessed defects such as
holes) based on chemical action occur in the stopper, since the
reliability of semiconductor devices is considerably affected, it
is demanded that the occurrence of defects in the stopper is
suppressed as much as possible. However, with a further increase in
density and further miniaturization of semiconductor elements, in
the technique of the related art, it is not easy to suppress the
occurrence of defects in the stopper, and particularly, it is not
easy to suppress the occurrence of defects in a stopper containing
a silicon material (excluding silicon oxide) such as polysilicon,
amorphous silicon, or single-crystal silicon.
[0006] The present invention is made in order to solve the above
problems, and an object thereof is to provide a polishing liquid
and a polishing liquid set which can suppress the occurrence of
defects in polishing of a surface to be polished containing a
silicon material (excluding silicon oxide). In addition, another
object of the present invention is to provide a polishing method
and a defect suppression method which use the polishing liquid or
the polishing liquid set.
Solution to Problem
[0007] The present inventors have conducted intensive studies on
constituent components of a polishing liquid in order to solve the
above problems. As a result, the present inventors have found that
the occurrence of defects in polishing of a surface to be polished
containing a silicon material (excluding silicon oxide) can be
suppressed by using a specific additive.
[0008] A polishing liquid of the present invention contains:
abrasive grains containing at least one selected from the group
consisting of cerium oxide and silicon oxide; a nitrogen-containing
compound; and water, in which the nitrogen-containing compound
contains at least one selected from the group consisting of (I) a
compound having an aromatic ring containing one nitrogen atom in
the ring and a hydroxyl group, (II) a compound having an aromatic
ring containing one nitrogen atom in the ring and a functional
group containing a nitrogen atom, (III) a compound having a
6-membered ring containing two nitrogen atoms in the ring, (IV) a
compound having a benzene ring and a ring containing a nitrogen
atom in the ring, and (V) a compound having a benzene ring to which
two or more functional groups containing a nitrogen atom are
bonded.
[0009] According to the polishing liquid of the present invention,
the occurrence of defects in polishing of a surface to be polished
containing a silicon material (excluding silicon oxide) can be
suppressed, and particularly, occurrence of defects based on
chemical action can be suppressed.
[0010] The nitrogen-containing compound preferably contains the
compound (II). The nitrogen-containing compound preferably contains
the compound (III). The nitrogen-containing compound preferably
contains nicotinamide. The nitrogen-containing compound preferably
contains aminopyridine. The nitrogen-containing compound preferably
contains pyrazinamide.
[0011] The polishing liquid of the present invention may further
contain a polymer compound (A) having at least one selected from
the group consisting of a carboxylic acid group and a carboxylate
group. A content of the polymer compound (A) is preferably 0.001 to
2% by mass.
[0012] The polishing liquid of the present invention may further
contain a nonionic polymer compound (B).
[0013] The polishing liquid of the present invention may further
contain a basic compound. A content of the basic compound is
preferably 0.04 mol/kg or less.
[0014] The abrasive grains preferably contain cerium oxide. The
abrasive grains may contain silicon oxide. A content of the
abrasive grains is preferably 0.01 to 20% by mass.
[0015] A pH of the polishing liquid of the present invention is
preferably 4.0 to 7.5. A pH of the polishing liquid of the present
invention is preferably more than 4.0.
[0016] A polishing liquid set of the present invention contains
constituent components of the polishing liquid of the present
invention stored while being divided into a first liquid and a
second liquid, the first liquid containing the abrasive grains and
water, the second liquid containing the nitrogen-containing
compound and water.
[0017] A polishing method of the present invention includes a step
of polishing a surface to be polished by using the polishing liquid
of the present invention or a polishing liquid obtained by mixing
the first liquid and the second liquid of the polishing liquid set
of the present invention. The surface to be polished may contain at
least one selected from the group consisting of polysilicon,
amorphous silicon, and single-crystal silicon. The surface to be
polished may contain amorphous silicon.
[0018] A defect suppression method of the present invention is a
defect suppression method suppressing the occurrence of defects in
polishing of a surface to be polished containing a stopper
material, the method including a step of polishing a surface to be
polished by using the polishing liquid of the present invention or
a polishing liquid obtained by mixing the first liquid and the
second liquid of the polishing liquid set of the present invention.
The stopper material may contain at least one selected from the
group consisting of polysilicon, amorphous silicon, and
single-crystal silicon. The stopper material may contain amorphous
silicon.
Advantageous Effects of Invention
[0019] According to the present invention, the occurrence of
defects in polishing of a surface to be polished containing a
silicon material (excluding silicon oxide) can be suppressed, and
particularly, the occurrence of defects based on chemical action
can be suppressed. According to the present invention, it is
possible to provide an use of the polishing liquid to the defect
suppression method suppressing the occurrence of defects in
polishing of a surface to be polished containing a silicon material
(excluding silicon oxide).
BRIEF DESCRIPTION OF DRAWINGS
[0020] FIG. 1 is a view showing an example of defects.
[0021] FIG. 2 is a schematic cross-sectional view illustrating a
polishing method of an embodiment of the present invention.
DESCRIPTION OF EMBODIMENTS
[0022] Hereinafter, an embodiment of the present invention will be
described in detail.
Definition
[0023] In the present specification, the term "step" includes not
only an independent step but also a step by which an intended
action of the step is achieved, though the step cannot be clearly
distinguished from other steps. A numerical range that has been
indicated by use of "to" indicates the range that includes the
numerical values which are described before and after "to," as the
minimum value and the maximum value, respectively. In the numerical
ranges that are described stepwise in the present specification,
the upper limit value or the lower limit value of the numerical
range of a certain stage can be arbitrarily combined with the upper
limit value or the lower limit value of the numerical range of
another stage. In the numerical ranges that are described in the
present specification, the upper limit value or the lower limit
value of the numerical value range may be replaced with the value
shown in the examples. Materials listed as examples in the present
specification can be used singly or in combinations of two or more,
unless otherwise specified. When a plurality of substances
corresponding to each component exist in the composition, the
content of each component in the composition means the total amount
of the plurality of substances that exist in the composition,
unless otherwise specified. "Polishing rate" means a rate at which
the material is removed per unit time (Removal Rate). "A or B" may
include either one of A and B, and may also include both of A and
B. "A or more" in the numerical range means A and a range of more
than A. "A or less" in the numerical range means A and a range of
less than A.
[0024] <Polishing Liquid>
[0025] A polishing liquid of the present embodiment (composition
for polishing) contains abrasive grains containing at least one
selected from the group consisting of cerium oxide and silicon
oxide, a nitrogen-containing compound, and water. The polishing
liquid of the present embodiment contains at least a
nitrogen-containing compound as an additive other than the abrasive
grains and water. The polishing liquid of the present embodiment
can be used as a polishing liquid for CMP.
[0026] According to the polishing liquid of the present embodiment,
the occurrence of defects in polishing of a surface to be polished
containing a silicon material (a material containing silicon;
excluding silicon oxide; the same applies hereinafter) can be
suppressed, and particularly, the occurrence of recessed defects
can be suppressed. The recessed defect is, for example, as shown in
FIG. 1, a recess such as a hole generated on a polished surface
after polishing, and occurs based on chemical action. Examples of
the silicon material include polysilicon (polycrystalline silicon),
amorphous silicon (non-crystalline silicon), and single-crystal
silicon.
[0027] The polishing liquid of the present embodiment can be used
in polishing using a silicon material as a stopper material. The
polishing liquid of the present embodiment can be used, for
example, for inhibiting the polishing of at least one selected from
the group consisting of polysilicon, amorphous silicon, and
single-crystal silicon.
[0028] The surface to be polished may contain other materials to be
polished (for example, an insulating material) in addition to a
silicon material. The polishing liquid of the present embodiment
may be used for polishing an insulating material, and for example,
may be used in polishing of removing at least a part of an
insulating material by CMP to expose a stopper. Examples of the
insulating material include insulating materials used in an
interlayer insulating film, a BPSG film, an STI film, and the
like.
[0029] (Abrasive Grains)
[0030] The polishing liquid of the present embodiment contains
abrasive grains (abrasive particles). The abrasive grains contain
at least one selected from the group consisting of cerium oxide
(ceria) and silicon oxide (silica). That is, the abrasive grains
may contain cerium oxide and it may contain silicon oxide. As the
abrasive grains, cerium oxide particles (particles containing
cerium oxide) may be used or silicon oxide particles (particles
containing silicon oxide) may be used. From the viewpoint of easily
obtaining a favorable polishing rate of an insulating material and
the viewpoint of stabilizing a polishing rate of an insulating
material, the abrasive grains preferably contain cerium oxide.
[0031] As the cerium oxide particles, colloidal ceria can also be
used. The cerium oxide particles may be particles obtained by
modifying surfaces of cerium oxide particles with an alkyl group,
composite particles obtained by attaching other particles to
surfaces of cerium oxide particles, composite particles obtained by
attaching cerium oxide particles to surfaces of other particles,
and the like.
[0032] The cerium oxide particles are preferably obtained by
oxidizing cerium salts such as carbonates, nitrates, sulfates, and
oxalates. Examples of the oxidation method include a firing method
in which a cerium salt is fired at about 600.degree. C. to
900.degree. C. and a chemical oxidation method in which a cerium
salt is oxidized using an oxidizing agent such as hydrogen
peroxide. As the method for producing the cerium oxide particles,
the firing method is preferred from the viewpoint of easily
obtaining a high polishing rate of an insulating material, and the
chemical oxidation method is preferred from the viewpoint that
polishing scratches hardly occur on the polished surface after
polishing.
[0033] In the case of using the cerium oxide particles, as the
crystallite diameter (diameter of crystallites) of the cerium oxide
particles is large and crystal distortion is small, high-speed
polishing is possible, but polishing scratches tend to be easily
generated on a material to be polished. From the above viewpoint,
as preferred cerium oxide particles, particles composed of two or
more crystallites and having crystal grain boundaries, and the like
are exemplified. Further, as other preferred cerium oxide
particles, for example, colloidal ceria particles having a
crystallite diameter of 5 to 300 nm (for example, colloidal ceria
manufactured by Rhodia) are exemplified.
[0034] The silicon oxide particles preferably contain at least one
selected from the group consisting of colloidal silica and fumed
silica and more preferably contain colloidal silica, from the
viewpoint of easily obtaining a favorable polishing rate of an
insulating material. The silicon oxide particles may be particles
obtained by modifying surfaces of silicon oxide particles with an
alkyl group, composite particles obtained by attaching other
particles to surfaces of silicon oxide particles, and the like.
[0035] In a case where the abrasive grains contain cerium oxide,
the content of the cerium oxide in the abrasive grains is
preferably 50% by mass or more, more preferably 70% by mass or
more, further preferably 90% by mass or more, particularly
preferably 95% by mass or more, extremely preferably 97% by mass or
more, and highly preferably 99% by mass or more, based on the whole
of the abrasive grains (the whole of the abrasive grains contained
in the polishing liquid; the same applies hereinafter), from the
viewpoint of easily obtaining a favorable polishing rate of an
insulating material. Regarding the abrasive grains containing
cerium oxide, an embodiment in which the abrasive grains are
substantially composed of cerium oxide (an embodiment in which
substantially 100% by mass of the abrasive grains is cerium oxide)
may be employed.
[0036] In a case where the abrasive grains contain silicon oxide,
the content of the silicon oxide in the abrasive grains is
preferably 50% by mass or more, more preferably 70% by mass or
more, further preferably 90% by mass or more, particularly
preferably 95% by mass or more, extremely preferably 97% by mass or
more, and highly preferably 99% by mass or more, based on the whole
abrasive grains, from the viewpoint of easily obtaining a favorable
polishing rate of an insulating material. Regarding the abrasive
grains containing silicon oxide, an embodiment in which the
abrasive grains are substantially composed of silicon oxide (an
embodiment in which substantially 100% by mass of the abrasive
grains is silicon oxide) may be employed.
[0037] The abrasive grains may be used singly or in combination of
two or more kinds thereof. The abrasive grains may contain
constituent components other than cerium oxide and silicon oxide.
Examples of the constituent components of the abrasive grains other
than cerium oxide and silicon oxide include at least one selected
from the group consisting of a cerium compound (excluding cerium
oxide), alumina (aluminum oxide), zirconia, titania, germania,
manganese oxide, magnesium oxide, resins, diamond, silicon carbide,
cubic boron nitride, and modified products thereof.
[0038] Examples of the cerium compound include cerium hydroxide,
cerium ammonium nitrate, cerium acetate, cerium sulfate hydrate,
cerium bromate, cerium bromide, cerium chloride, cerium oxalate,
cerium nitrate, and cerium carbonate. As particles containing
alumina, colloidal alumina can be used. Particles containing
constituent components other than cerium oxide and silicon oxide
may be particles obtained by modifying surfaces of particles with
an alkyl group; composite particles obtained by attaching other
particles to surfaces of particles; and the like.
[0039] The abrasive grains may be abrasive grains obtained by any
producing method. For example, as the method of producing an oxide,
a solid phase method using firing or the like; a liquid phase
method such as a precipitation method, a sol-gel method, or a
hydrothermal synthesis method; a gas phase method such as a
sputtering method, a laser method, or a thermal plasma method, and
the like can be used.
[0040] In a case where the abrasive grains are aggregated, the
aggregated abrasive grains may be subjected to mechanical
pulverization. As a pulverization method, for example, a dry
pulverization method using a jet mill or the like and a wet
pulverization method using a planetary bead mill or the like are
preferred. For the jet mill, for example, a method described in
"Kagaku Kougaku Ronbunshu (Collection of chemical engineering
papers)," Vol. 6, No. 5, (1980), pp. 527 to 532 can be applied.
[0041] The polishing liquid can be obtained by dispersing the
abrasive grains in water that is a dispersing medium. As a
dispersion method, for example, in addition to a dispersion
treatment by a general stirrer, methods using a homogenizer, an
ultrasonic dispersing machine, a wet ball mill, and the like are
exemplified. As for the dispersion method and a particle size
controlling method, for example, methods described in Chapter 3
"Latest development trend and selection guidelines for various
dispersing machines" of "Encyclopedia of Dispersion Technology"
[Johokiko Co., Ltd., July 2005] can be used. Further, the
dispersibility of the abrasive grains can also be increased by
lowering an electric conductivity of the dispersion containing the
abrasive grains (for example, 500 mS/m or less). Examples of the
method of lowering the electric conductivity of the dispersion
include a method in which solid-liquid separation is performed by
centrifugal separation or the like in order to separate the
abrasive grains from the dispersing medium, the supernatant liquid
(dispersing medium) is discarded, and then redispersion is
performed by addition of a dispersing medium having a low electric
conductivity; and a method using ultrafiltration, an ion exchange
resin, or the like.
[0042] The abrasive grains dispersed by the above method may be
further micronized. As the micronizing method, for example, a
precipitating classification method (a method in which the abrasive
grains are subjected to centrifugal separation by a centrifugal
separator and then forcibly precipitated, and the only supernatant
liquid is removed) is exemplified. Further, a high-pressure
homogenizer in which the abrasive grains collide with each other in
the dispersing medium by high pressure may be used.
[0043] The average particle size of the abrasive grains is
preferably 10 nm or more, more preferably 20 nm or more, further
preferably 50 nm or more, particularly preferably 90 nm or more,
extremely preferably more than 90 nm, highly preferably 100 nm or
more, even more preferably 130 nm or more, and further preferably
150 nm or more, from the viewpoint of easily obtaining a favorable
polishing rate of an insulating material. The average particle size
of the abrasive grains is preferably 500 nm or less, more
preferably 400 nm or less, further preferably 300 nm or less, and
particularly preferably 200 nm or less, from the viewpoint that
scratches are less likely to be generated in a material to be
polished. From these viewpoints, the average particle size of the
abrasive grains is preferably 10 to 500 nm, more preferably 20 to
400 nm, further preferably 50 to 300 nm, particularly preferably 90
to 300 nm, extremely preferably more than 90 nm and 300 nm or less,
highly preferably 100 to 300 nm, even more preferably 130 to 300
nm, and further preferably 150 to 200 nm.
[0044] The average particle size of the abrasive grains means, for
example, the D50 value (the average secondary particle size; the
median diameter of the volume distribution; the cumulative median)
of the measurement sample measured using a laser diffraction type
particle size distribution meter (trade name: LA-920, manufactured
by HORIBA, Ltd., refractive index: 1.93, light source: He--Ne
laser, absorption: 0). In measurement of the average particle size,
a measurement sample having an appropriate content (for example, a
content at which a transmittance (H) becomes 60 to 70% as measured
with respect to He--Ne laser) can be used. Further, in the case of
storing the polishing liquid containing the abrasive grains while
being divided into a slurry in which the abrasive grains are
dispersed in water, and an additive liquid containing an additive,
the measurement can be carried out by diluting the slurry to an
appropriate content.
[0045] The content of the abrasive grains is preferably in the
following range based on the total mass of the polishing liquid.
The content of the abrasive grains is preferably 0.01% by mass or
more, more preferably 0.05% by mass or more, further preferably
0.1% by mass or more, particularly preferably 0.2% by mass or more,
extremely preferably 0.4% by mass or more, and highly preferably
0.5% by mass or more, from the viewpoint of easily securing a
sufficient polishing rate of an insulating material. The content of
the abrasive grains is preferably 20% by mass or less, more
preferably 10% by mass or less, further preferably 5% by mass or
less, particularly preferably 3% by mass or less, and extremely
preferably 1% by mass or less, from the viewpoint of easily
suppressing the aggregation of the abrasive grains. From these
viewpoints, the content of the abrasive grains is preferably 0.01
to 20% by mass, more preferably 0.05 to 10% by mass, further
preferably 0.1 to 5% by mass, particularly preferably 0.2 to 3% by
mass, extremely preferably 0.2 to 1% by mass, highly preferably 0.4
to 1% by mass, and even more preferably 0.5 to 1% by mass.
[0046] (Additive)
[0047] [Nitrogen-Containing Compound]
[0048] The polishing liquid of the present embodiment contains a
nitrogen-containing compound. The nitrogen-containing compound can
act as a defect inhibitor. The nitrogen-containing compound
contains at least one selected from the group consisting of (I) a
compound having an aromatic ring containing one nitrogen atom in
the ring and a hydroxyl group (hereinafter, referred to as
"compound (I)"), (II) a compound having an aromatic ring containing
one nitrogen atom in the ring and a functional group containing a
nitrogen atom (excluding a compound corresponding to the compound
(I); hereinafter, referred to as "compound (II)"), (III) a compound
having a 6-membered ring containing two nitrogen atoms in the ring
(excluding a compound corresponding to the compound (I) or the
compound (II); hereinafter, referred to as "compound (III)"), (IV)
a compound having a benzene ring and a ring containing a nitrogen
atom in the ring (excluding a compound corresponding to the
compound (I), the compound (II), or the compound (III);
hereinafter, referred to as "compound (IV)"), and (V) a compound
having a benzene ring to which two or more functional groups
containing a nitrogen atom are bonded (excluding a compound
corresponding to the compound (I), the compound (II), the compound
(III), or the compound (IV); hereinafter, referred to as "compound
(V)"). The nitrogen-containing compound may be used singly or in
combination of two or more kinds thereof.
[0049] According to the polishing liquid of the present embodiment,
by using the nitrogen-containing compound, the occurrence of
defects in polishing of a surface to be polished containing a
silicon material can be suppressed, and particularly, the
occurrence of defects based on chemical action can be suppressed.
The specific reason why such an effect is exhibited is not
necessarily clear, but the present inventors speculate an example
of the reason in the following way. That is, a hydroxyl group is
present on the surface of a silicon material such as polysilicon,
amorphous silicon, or single-crystal silicon. In this case, it is
speculated that, by using a compound which can form a hydrogen bond
or a coordination bond with at least two or more hydroxyl groups of
a silicon material or a compound which can strengthen a hydrogen
bond or a coordination bond with a hydroxyl group of a silicon
material, the surface of the silicon material is suitably
protected, and thus the occurrence of defects is suppressed.
[0050] The number of nitrogen atoms in one molecule of the
nitrogen-containing compound is preferably 1 to 4 and more
preferably 1 to 3, from the viewpoint of further suppressing the
occurrence of defects. The number of the nitrogen atoms may be 2 or
more.
[0051] The compound (I) is a compound having an aromatic ring
containing one nitrogen atom in the ring and a hydroxyl group. It
is speculated that the surface of the silicon material is suitably
protected by a coordination bond between a vacant orbital of the
nitrogen atom in the ring of the compound (I) and an unshared
electron pair of the oxygen atom of the hydroxyl group in the
silicon material or a hydrogen bond between the hydroxyl group of
the compound (I) and the hydroxyl group of the silicon material.
Incidentally, OH of the carboxyl group (COOH group) is not included
in the hydroxyl group of the compound (I). The hydrogen bonding
property of OH of the carboxyl group is speculated to be lower than
that of the hydroxyl group.
[0052] Examples of the aromatic ring include a 3-membered ring, a
4-membered ring, a 5-membered ring, and a 6-membered ring, and from
the viewpoint of further suppressing the occurrence of defects, a
6-membered ring is preferred. The aromatic ring is, for example, a
heteroaromatic ring. Examples of the aromatic ring containing one
nitrogen atom in the ring include an azole ring, a pyridine ring,
an oxazole ring, a thiazole ring, a thiazine ring, and from the
viewpoint of further suppressing the occurrence of defects, a
pyridine ring is preferred.
[0053] The hydroxyl group of the compound (I) may be a hydroxyl
group which is bonded directly to the aromatic ring and may be a
hydroxyl group which is not bonded directly to the aromatic ring.
The compound (I) preferably has a hydroxyl group which is bonded
directly to an aromatic ring, from the viewpoint of further
suppressing the occurrence of defects. The number of hydroxyl
groups is preferably 1 to 3, more preferably 1 or 2, and further
preferably 1, from the viewpoint of further suppressing the
occurrence of defects. The hydroxyl group is preferably bonded to a
carbon atom adjacent to the nitrogen atom contained in the aromatic
ring, from the viewpoint of further suppressing the occurrence of
defects.
[0054] As the compound (I), hydroxypyridine is preferred from the
viewpoint of further suppressing the occurrence of defects.
Examples of the hydroxypyridine include 2-hydroxypyridine,
3-hydroxypyridine, and 4-hydroxypyridine.
[0055] The compound (II) is a compound having an aromatic ring
containing one nitrogen atom in the ring and a functional group
containing a nitrogen atom. It is speculated that the surface of
the silicon material is suitably protected by a coordination bond
between a vacant orbital of the nitrogen atom in the ring of the
compound (II) and an unshared electron pair of the oxygen atom of
the hydroxyl group in the silicon material or a hydrogen bond
between the functional group containing a nitrogen atom of the
compound (II) and the hydroxyl group of the silicon material.
[0056] Examples of the aromatic ring include a 3-membered ring, a
4-membered ring, a 5-membered ring, and a 6-membered ring, and from
the viewpoint of further suppressing the occurrence of defects, a
6-membered ring is preferred. The aromatic ring is, for example, a
heteroaromatic ring. Examples of the aromatic ring containing one
nitrogen atom in the ring include an azole ring, a pyridine ring,
an oxazole ring, a thiazole ring, a thiazine ring, and from the
viewpoint of further suppressing the occurrence of defects, a
pyridine ring is preferred.
[0057] Examples of the functional group containing a nitrogen atom
include an amino group, an amide group, and a sulfonamide group,
and from the viewpoint of further suppressing the occurrence of
defects, at least one selected from the group consisting of an
amino group and an amide group is preferred. The functional group
containing a nitrogen atom may be a functional group which is
bonded directly to the aromatic ring and may be a functional group
which is not bonded directly to the aromatic ring. The compound
(II) preferably has a functional group which is bonded directly to
an aromatic ring, as the functional group containing a nitrogen
atom, from the viewpoint of further suppressing the occurrence of
defects. The number of functional groups containing a nitrogen atom
is preferably 1 to 3, more preferably 1 or 2, and further
preferably 1, from the viewpoint of further suppressing the
occurrence of defects. The functional group containing a nitrogen
atom is preferably bonded to a carbon atom located at the
2-position or the 3-position with respect to a nitrogen atom
located at the 1-position contained in the aromatic ring, from the
viewpoint of further suppressing the occurrence of defects.
[0058] As the compound (II), from the viewpoint of further
suppressing the occurrence of defects, at least one selected from
the group consisting of aminopyridine, picolinamide, and
nicotinamide is preferred. Examples of the aminopyridine include
2-aminopyridine, 3-aminopyridine, and 4-aminopyridine.
[0059] The compound (III) is a compound having a 6-membered ring
containing two nitrogen atoms in the ring. It is speculated that
the surface of the silicon material is suitably protected by a
coordination bond between a vacant orbital of the nitrogen atom in
the ring of the compound (III) and an unshared electron pair of the
oxygen atom of the hydroxyl group in the silicon material at two
sites. It is speculated that, in a compound having a 5-membered
ring (pyrazole or the like), since the nitrogen atom having a
vacant orbital and the nitrogen atom having an unshared electron
pair are mixedly present and are adjacent to each other, the
coordination bonding property and the hydrogen bonding property are
weak. Also, it is speculated that, in a case where the 6-membered
ring contains three or more nitrogen atoms in the ring, since the
nitrogen atom having a vacant orbital and the nitrogen atom having
an unshared electron pair are mixedly present and are adjacent to
each other, the coordination bonding property and the hydrogen
bonding property are weak.
[0060] Examples of the 6-membered ring include an aromatic ring and
a non-aromatic ring, and from the viewpoint of further suppressing
the occurrence of defects, an aromatic ring is preferred. The
aromatic ring is, for example, a heteroaromatic ring. As the
6-membered ring containing two nitrogen atoms in the ring, a
pyrazine ring is preferred.
[0061] In the compound (III), the number of functional groups
containing a nitrogen atom is preferably 1 or less, from the
viewpoint of further suppressing the occurrence of defects.
Examples of the functional group containing a nitrogen atom include
an amino group, an amide group, and a sulfonamide group. In the
functional group containing a nitrogen atom, a 6-membered ring
containing two nitrogen atoms in the ring is not included.
[0062] Examples of the compound (III) include pyrazine,
pyrazinamide, 2,5-dimethylpyrazine, 2,3-dimethylpyrazine,
2,3-diethylpyrazine, and 2,3,5,6-tetramethylpyrazine, and from the
viewpoint of further suppressing the occurrence of defects, at
least one selected from the group consisting of pyrazine,
pyrazinamide, 2,5-dimethylpyrazine, 2,3-dimethylpyrazine, and
2,3,5,6-tetramethylpyrazine is preferred.
[0063] The compound (IV) is a compound having a benzene ring and a
ring containing a nitrogen atom in the ring. It is speculated that
the surface of the silicon material is suitably protected by
strengthening the coordination bonding property between a vacant
orbital of the nitrogen atom in the ring of the compound (IV) and
an unshared electron pair of the oxygen atom of the hydroxyl group
in the silicon material by the electron-withdrawing property of the
benzene ring in the compound (IV).
[0064] Examples of the ring containing a nitrogen atom in the ring
include a 3-membered ring, a 4-membered ring, a 5-membered ring,
and a 6-membered ring, and from the viewpoint of further
suppressing the occurrence of defects, a 5-membered ring is
preferred. The ring containing a nitrogen atom in the ring may be
an aromatic ring or a non-aromatic ring. Examples of the ring
containing a nitrogen atom in the ring include a pyridine ring, an
azole ring, a triazole ring, an imidazole ring, a pyrazole ring, an
oxazole ring, a thiazole ring, a pyrazine ring, a thiazine ring, an
azepine ring, a pyrrolidine ring, a piperidine ring, an imidazoline
ring, a morpholine ring, a pyrazoline ring, and a pyrazolone ring,
and from the viewpoint of further suppressing the occurrence of
defects, at least one selected from the group consisting of a
triazole ring and a pyrazolone ring is preferred. The number of
nitrogen atoms in the ring containing a nitrogen atom in the ring
is preferably 2 or more, from the viewpoint of further suppressing
the occurrence of defects. The number of nitrogen atoms in the ring
containing a nitrogen atom in the ring is preferably 4 or less and
more preferably 3 or less, from the viewpoint of further
suppressing the occurrence of defects. The benzene ring and the
ring containing a nitrogen atom in the ring may share a carbon atom
constituting the ring or may not share the carbon atom.
[0065] As the compound (IV), from the viewpoint of further
suppressing the occurrence of defects, at least one selected from
the group consisting of benzotriazole and 1-phenyl-3-pyrazolidone
is preferred.
[0066] The compound (V) is a compound having a benzene ring to
which two or more functional groups containing a nitrogen atom are
bonded. It is speculated that the surface of the silicon material
is suitably protected by forming a hydrogen bond between the
functional group containing a nitrogen atom of the compound (V) and
the hydroxyl group of the silicon material and by strengthening the
hydrogen bond by the electron-withdrawing property of the benzene
ring in the compound (V). In a case where the functional group
containing a nitrogen atom is one, it is speculated that the
hydrogen bond is not sufficiently strengthened by the
electron-withdrawing property of the benzene ring.
[0067] As a substituent, two or more functional groups containing a
nitrogen atom are bonded directly to the benzene ring. As the
functional group containing a nitrogen atom, from the viewpoint of
further suppressing the occurrence of defects, at least one
selected from the group consisting of an amino group, an amide
group, and a sulfonamide group is preferred. The number of
functional groups containing a nitrogen atom is preferably 2 to 4,
more preferably 2 or 3, and further preferably 2, from the
viewpoint of further suppressing the occurrence of defects.
Regarding the disposition of the functional group containing a
nitrogen atom, from the viewpoint of further suppressing the
occurrence of defects, another functional group with respect to one
functional group is preferably located at the para position of the
benzene ring.
[0068] As the compound (V), from the viewpoint of further
suppressing the occurrence of defects, at least one selected from
the group consisting of sulfanilamide and p-aminobenzoic acid amide
is preferred. The compound (V) may contain a compound not having a
sulfonamide group. The compound (V) may not contain a compound not
having a sulfonamide group.
[0069] From the viewpoint of further suppressing the occurrence of
defects, the nitrogen-containing compound preferably contains at
least one selected from the group consisting of the compound (II),
the compound (III), and the compound (IV), more preferably contains
at least one selected from the group consisting of the compound
(II) and the compound (III), and further preferably contains at
least one selected from the group consisting of nicotinamide,
aminopyridine, and pyrazinamide. From the viewpoint of further
suppressing the occurrence of defects, the nitrogen-containing
compound preferably has an embodiment containing the compound (II),
an embodiment containing the compound (III), or an embodiment
containing the compound (IV), more preferably has an embodiment
containing the compound (II) or an embodiment containing the
compound (III), and further preferably an embodiment containing
nicotinamide, an embodiment containing aminopyridine, or an
embodiment containing pyrazinamide.
[0070] The content of the nitrogen-containing compound is
preferably in the following range based on the total mass of the
polishing liquid. The content of the nitrogen-containing compound
is preferably 0.001% by mass or more, more preferably 0.005% by
mass or more, further preferably 0.01% by mass or more,
particularly preferably 0.03% by mass or more, extremely preferably
0.05% by mass or more, highly preferably 0.07% by mass or more, and
even more preferably 0.1% by mass or more, from the viewpoint of
easily and sufficiently obtaining a defect suppressing effect. The
content of the nitrogen-containing compound is preferably 10% by
mass or less, more preferably 5% by mass or less, further
preferably 3% by mass or less, particularly preferably 1% by mass
or less, extremely preferably 0.5% by mass or less, and highly
preferably 0.3% by mass or less, from the viewpoint of easily
securing a sufficient polishing rate of an insulating material.
From these viewpoints, the content of the nitrogen-containing
compound is preferably 0.001 to 10% by mass, more preferably 0.005
to 10% by mass, further preferably 0.01 to 10% by mass,
particularly preferably 0.03 to 5% by mass, extremely preferably
0.05 to 3% by mass, highly preferably 0.07 to 1% by mass, even more
preferably 0.07 to 0.5% by mass, and further preferably 0.1 to 0.3%
by mass. The content of the nitrogen-containing compound may be
0.5% by mass or more or 1% by mass or more, from the viewpoint of
easily and particularly sufficiently obtaining a defect suppressing
effect. The content of the nitrogen-containing compound may be 0.2%
by mass or less, 0.1% by mass or less, less than 0.1% by mass,
0.05% by mass or less, or 0.01% by mass or less, from the viewpoint
of easily securing a particularly sufficient polishing rate of an
insulating material.
[0071] [Polymer Compound (A)]
[0072] The polishing liquid of the present embodiment can contain a
polymer compound (A) having at least one selected from the group
consisting of a carboxylic acid group and a carboxylate group
(excluding a compound corresponding to the nitrogen-containing
compound). By using the polymer compound (A), dishing can be
suppressed.
[0073] The polymer compound (A) may be used singly or in
combination of two or more kinds thereof. The polymer compound (A)
preferably contains a polymer or a salt thereof wherein the polymer
is obtained by polymerizing a monomer containing at least one
selected from the group consisting of acrylic acid and methacrylic
acid (hereinafter, these are collectively referred to as
"(meth)acrylic acid-based polymer"). The monomer may include other
monomer (excluding acrylic acid and methacrylic acid)
copolymerizable with acrylic acid or methacrylic acid.
[0074] The polymer compound (A) may be at least one selected from
the group consisting of a homopolymer of acrylic acid (polyacrylic
acid), a homopolymer of methacrylic acid (polymethacrylic acid), a
copolymer of acrylic acid and methacrylic acid, a copolymer of
acrylic acid or methacrylic acid with other monomer, a copolymer of
acrylic acid, methacrylic acid, and other monomer, and salts
thereof. Among them, as the (meth)acrylic acid-based polymer, from
the viewpoint of obtaining favorable adsorption to a stopper
material, at least one selected from the group consisting of a
homopolymer of acrylic acid (polyacrylic acid) and a salt thereof
is preferred. As the salt of the polymer (a polymer having a
carboxylate group), an ammonium salt and the like are exemplified.
As the ammonium salt, ammonium polyacrylate and the like are
exemplified. The (meth)acrylic acid-based polymer may be used
singly or in combination of two or more kinds thereof.
[0075] Examples of the other monomers (other monomers
copolymerizable with acrylic acid or methacrylic acid) include an
unsaturated carboxylic acid such as crotonic acid, pentenoic acid,
hexenoic acid, heptenoic acid, octenoic acid, nonenoic acid,
decenoic acid, undecenoic acid, dodecenoic acid, tridecenoic acid,
tetradecenoic acid, pentadecenoic acid, hexadecenoic acid, or
heptadecenoic acid; and a vinyl compound such as ethylene,
propylene, or styrene.
[0076] The weight average molecular weight of the polymer compound
(A) is preferably in the following range. The weight average
molecular weight of the polymer compound (A) is preferably 100 or
more, more preferably 1000 or more, further preferably 2000 or
more, and particularly preferably 2500 or more, from the viewpoint
that there is a tendency that a favorable polishing rate is easily
obtainable when an insulating material (silicon oxide or the like)
is polished. The weight average molecular weight of the polymer
compound (A) is preferably 150000 or less, more preferably 80000 or
less, further preferably 10000 or less, particularly preferably
7000 or less, and extremely preferably 5000 or less, from the
viewpoint that there is a tendency that the storage stability of
the polishing liquid is difficult to decrease. From these
viewpoints, the weight average molecular weight of the polymer
compound (A) is preferably 100 to 150000, more preferably 1000 to
80000, further preferably 1000 to 10000, particularly preferably
2000 to 7000, and extremely preferably 2500 to 5000.
[0077] The weight average molecular weight can be measured by
reading a value obtained as "Mw" according to the following
method.
[Measuring Method]
[0078] Equipment used (detector): "L-3300 type" differential
refractometer for liquid chromatograph manufactured by Hitachi,
Ltd.
[0079] Pump: "L-7100" for liquid chromatograph manufactured by
Hitachi, Ltd.
[0080] Degassing apparatus: None
[0081] Data processing: GPC integrator "D-2520" manufactured by
Hitachi, Ltd.
[0082] Column: "Shodex Asahipak GF-710HQ," manufactured by Showa
Denko K.K., inner diameter 7.6 mm.times.300 mm
[0083] Eluent: 50 mM-Na.sub.2HPO.sub.4 aqueous
solution/acetonitrile=90/10 (v/v)
[0084] Measurement temperature: 25.degree. C.
[0085] Flow rate: 0.6 mL/min (L represents liter, same as
below)
[0086] Measurement time: 30 min
[0087] Sample: sample prepared by adjusting a concentration with a
solution having the same composition as the eluent so that the
resin concentration becomes 2% by mass and filtering through a 0.45
.mu.m polytetrafluoroethylene filter
[0088] Injection amount: 0.4 .mu.L
[0089] Standard substance: narrow-molecular-weight sodium
polyacrylate manufactured by Polymer Laboratories
[0090] The content of the polymer compound (A) is preferably in the
following range based on the total mass of the polishing liquid.
The content of the polymer compound (A) is preferably 0.001% by
mass or more, more preferably 0.01% by mass or more, and further
preferably 0.1% by mass or more, from the viewpoints of easily
decreasing a dishing amount or the like and easily and sufficiently
securing surface flatness. The content of the polymer compound (A)
is preferably 2% by mass or less, more preferably 1% by mass or
less, further preferably 0.5% by mass or less, and particularly
preferably 0.3% by mass or less, from the viewpoint of easily
suppressing that the storage stability of the abrasive grains is
decreased so that the aggregation of the abrasive grains, or the
like, easily occurs. From these viewpoints, the content of the
polymer compound (A) is preferably 0.001 to 2% by mass, more
preferably 0.01 to 1% by mass, further preferably 0.1 to 0.5% by
mass, and particularly preferably 0.1 to 0.3% by mass.
[0091] [Polymer Compound (B): Nonionic Polymer Compound]
[0092] The polishing liquid of the present embodiment may contain a
nonionic polymer compound (B) (excluding a compound corresponding
to the nitrogen-containing compound or the polymer compound (A)).
The polymer compound (B) can function as a stopper material
polishing inhibitor that suppresses the polishing of a stopper
material. By using the polymer compound (B), an excellent polishing
rate ratio of an insulating material with respect to a stopper
material can be obtained.
[0093] Examples of the polymer compound (B) include polyalkylene
glycol; polyoxyalkylene derivative; polyglycerol; a vinyl alcohol
polymer (note that, a compound corresponding to a compound having a
polyoxyalkylene chain is excluded); acrylamide, methacrylamide, or
an N-mono-substituted product or N,N-di-substituted product of an
.alpha.-substituted product thereof); polyvinylpyrrolidone and a
copolymer having a structure unit derived from vinylpyrrolidone;
and other water-soluble nonionic compounds. The polymer compound
(B) may be used singly or in combination of two or more kinds
thereof.
[0094] Examples of the polyalkylene glycol include polyethylene
glycol and polypropylene glycol.
[0095] Examples of the polyoxyalkylene derivative include a
compound in which a functional group and/or a substituent is
introduced into polyalkylene glycol, and a compound in which
polyalkylene oxide is added to an organic compound. Examples of the
functional group and the substituent include alkyl ether, alkyl
phenyl ether, phenyl ether, styrenated phenyl ether, alkylamine,
fatty acid ester, glycol ester, polyglyceryl ether, diglyceryl
ether, sugar ether, and sugar ester.
[0096] Examples of the polyoxyalkylene derivative include
polyoxyethylene styrenated-phenyl ether (for example, NOIGEN
(registered trademark) EA series manufactured by DKS Co. Ltd.);
polyoxyethylene alkyl ether (for example, Emulgen (registered
trademark) series manufactured by Kao Corporation); polyoxyethylene
alkyl phenyl ether (for example, Emulsit (registered trademark)
series manufactured by DKS Co. Ltd.); polyoxyethylene sorbitan
fatty acid ester (for example, SORGEN (registered trademark) TW
series manufactured by DKS Co. Ltd.); polyoxyethylene fatty acid
ester (for example, EMANON (registered trademark) series
manufactured by Kao Corporation); polyoxyethylene alkylamine (for
example, Amirazine (registered trademark) D manufactured by DKS Co.
Ltd.); polyoxypropylene sorbitol (for example, UNIOL (registered
trademark) HS-1600D manufactured by NOF CORPORATION);
polyoxyalkylene diglyceryl ether such as polyoxyethylene diglyceryl
ether (for example, SC-E series manufactured by Sakamoto Yakuhin
Kogyo Co., Ltd.) or polyoxypropylene diglyceryl ether (for example,
SY-DP series manufactured by Sakamoto Yakuhin Kogyo Co., Ltd.);
polyoxyalkylene polyglyceryl ether such as polyoxyethylene
polyglyceryl ether, polyoxypropylene polyglyceryl ether, or
polyoxyethylene polyoxypropylene glycol ether (for example, EPAN
manufactured by DKS Co. Ltd.); and a compound added with
polyalkylene oxide (for example, Surfynol (registered trademark)
465 manufactured by Air Products Japan K.K.; or TMP series
manufactured by NIPPON NYUKAZAI CO., LTD.).
[0097] Since the vinyl alcohol tends not to exist alone as a stable
compound, the vinyl alcohol polymer is obtained by polymerization
of a vinyl carboxylate monomer such as a vinyl acetate monomer to
obtain polyvinyl carboxylate, followed by saponification
(hydrolysis). Therefore, for example, a vinyl alcohol polymer
obtained using a vinyl acetate monomer as a raw material has, as a
functional group, --OCOCH.sub.3 and hydrolyzed --OH in the
molecule, and the proportion of --OH is defined as a saponification
degree. That is, a vinyl alcohol polymer whose saponification
degree is not 100% has a structure which is substantially a
copolymer of vinyl acetate and vinyl alcohol. Further, the vinyl
alcohol polymer may be one in which a vinyl carboxylate monomer
such as a vinyl acetate monomer and another vinyl group-containing
monomer (for example, ethylene, propylene, styrene, or vinyl
chloride) are copolymerized, and all or some of the portions
derived from the vinyl carboxylate monomer are saponified. Specific
examples of such a vinyl alcohol polymer include PVA-403
manufactured by Kuraray Co., Ltd. and JC-25 manufactured by JAPAN
VAM & POVAL CO., LTD. In the present specification, these are
collectively defined as "vinyl alcohol polymer."
[0098] The vinyl alcohol polymer may be a derivative of a
homopolymer of vinyl alcohol (that is, a polymer having a
saponification degree of 100%), a derivative of a copolymer of a
vinyl alcohol monomer and other vinyl group-containing monomer (for
example, ethylene, propylene, styrene, vinyl chloride, or vinyl
acetate), or the like. Examples of such a derivative include
compounds in which at least a part of hydroxyl group is substituted
with an amino group, a carboxyl group, an ester group, and the like
and compounds in which at least a part of hydroxyl group is
modified, and specific examples thereof include reactive polyvinyl
alcohols (for example, GOHSEFIMER (registered trademark) Z
manufactured by Nippon Synthetic Chemical Industry Co., Ltd.),
cationized polyvinyl alcohols (for example, GOHSEFIMER (registered
trademark) K manufactured by Nippon Synthetic Chemical Industry
Co., Ltd.), anionized polyvinyl alcohols (for example, GOHSERAN
(registered trademark) L and GOHSENOL (registered trademark) T
manufactured by Nippon Synthetic Chemical Industry Co., Ltd.), and
hydrophilic group-modified polyvinyl alcohols (for example, ECOMATI
(registered trademark) manufactured by Nippon Synthetic Chemical
Industry Co., Ltd.).
[0099] Examples of the N-mono-substituted product include
N-methylacrylamide, N-ethylacrylamide, N-propylacrylamide,
N-isopropylacrylamide, N-butylacrylamide, N-isobutylacrylamide,
N-t-butylacrylamide, N-heptylacrylamide, N-octylacrylamide,
N-t-octylacrylamide, N-dodecylacrylamide, N-octadecylacrylamide,
N-methylolacrylamide, N-acetylacrylamide, N-diacetoneacrylamide,
N-methylmethacrylamide, N-ethylmethacrylamide,
N-propylmethacrylamide, N-isopropylmethacrylamide,
N-butylmethacrylamide, N-isobutylmethacrylamide,
N-t-butylmethacrylamide, N-heptylmethacrylamide,
N-octylmethacrylamide, N-t-octylmethacrylamide,
N-dodecylmethacrylamide, N-octadecylmethacrylamide,
N-methylolmethacrylamide, and N-acetylmethacrylamide.
[0100] Examples of the N,N-di-substituted product include
N,N-dimethylacrylamide, N,N-diethylacrylamide,
N,N-dipropylacrylamide, N,N-diisopropylacrylamide,
N,N-dibutylacrylamide, N,N-diisobutylacrylamide,
N,N-di-t-butylacrylamide, N,N-diheptylacrylamide,
N,N-dioctylacrylamide, N,N-di-t-octylacrylamide,
N,N-didodecylacrylamide, N,N-dioctadecylacrylamide,
N,N-dimethylolacrylamide, N,N-diacetylacrylamide,
N,N-dimethylmethacrylamide, N,N-diethylmethacrylamide,
N,N-dipropylmethacrylamide, N,N-diisopropylmethacrylamide,
N,N-dibutylmethacrylamide, N,N-diisobutylmethacrylamide,
N,N-di-t-butylmethacrylamide, N,N-diheptylmethacrylamide,
N,N-dioctylmethacrylamide, N,N-di-t-octylmethacrylamide,
N,N-didodecylmethacrylamide, N,N-dioctadecylmethacrylamide,
N,N-dimethylolmethacrylamide, N,N-diacetylmethacrylamide,
acryloylpiperidine, acryloylmorpholine, acryloylthiomorpholine, and
acryloylpyrrolidine.
[0101] Examples of the other water-soluble nonionic compounds
include polyethylene glycol monolaurate, polyethylene glycol
monostearate, polyethylene glycol distearate, polyethylene glycol
monooleate, polyoxyethylene alkylamine, polyoxyethylene
hydrogenated castor oil, and alkylalkanolamide.
[0102] The weight average molecular weight of the polymer compound
(B) is preferably in the following range. The weight average
molecular weight of the polymer compound (B) is preferably 100 or
more, more preferably 300 or more, and further preferably 500 or
more, from the viewpoint that there is a tendency that favorable
flatness is easily obtainable when an insulating material (silicon
oxide or the like) is polished. The weight average molecular weight
of the polymer compound (B) is preferably 10000 or less, more
preferably 7000 or less, and further preferably 5000 or less, from
the viewpoint that there is a tendency that a favorable polishing
rate is easily obtainable when an insulating material (silicon
oxide or the like) is polished. From these viewpoints, the weight
average molecular weight of the polymer compound (B) is preferably
100 to 10000, more preferably 300 to 7000, and further preferably
500 to 5000. The weight average molecular weight of the polymer
compound (B) can be measured in the same manner as in the weight
average molecular weight of the polymer compound (A).
[0103] The content of the polymer compound (B) is preferably in the
following range based on the total mass of the polishing liquid.
The content of the polymer compound (B) is preferably 0.005% by
mass or more, more preferably 0.01% by mass or more, further
preferably 0.015% by mass or more, particularly preferably 0.02% by
mass or more, extremely preferably 0.03% by mass or more, and
highly preferably 0.04% by mass or more, from the viewpoint of
easily and sufficiently securing the effect of suppressing the
polishing of a stopper material. The content of the polymer
compound (B) is preferably 2% by mass or less, more preferably 1.5%
by mass or less, further preferably 1% by mass or less,
particularly preferably 0.5% by mass or less, extremely preferably
0.1% by mass or less, and highly preferably 0.05% by mass or less,
from the viewpoint of easily securing a sufficient polishing rate
of an insulating material. From these viewpoints, the content of
the polymer compound (B) is preferably 0.005 to 2% by mass, more
preferably 0.01 to 1.5% by mass, further preferably 0.015 to 1% by
mass, particularly preferably 0.02 to 0.5% by mass, extremely
preferably 0.03 to 0.1% by mass, and highly preferably 0.04 to
0.05% by mass.
[0104] [pH Adjusting Agent]
[0105] The polishing liquid of the present embodiment can contain a
pH adjusting agent (excluding a compound corresponding to the
nitrogen-containing compound, the polymer compound (A), or the
polymer compound (B)). The pH can be adjusted to a desired pH by
the pH adjusting agent. The pH adjusting agent is not particularly
limited, and examples thereof include basic compounds such as
ammonia, sodium hydroxide, potassium hydroxide, and calcium
hydroxide; and acid components such as organic acid components and
inorganic acid components. Examples of the inorganic acid component
include nitric acid, sulfuric acid, hydrochloric acid, phosphoric
acid, and boric acid. The pH adjusting agent may be used singly or
in combination of two or more kinds thereof. In the case of using
the polishing liquid in polishing of semiconductors, ammonia or an
acid component can be suitably used.
[0106] As the pH adjusting agent, from the viewpoint of easily
obtaining a favorable polishing rate of an insulating material,
basic compounds are preferred, and ammonia is more preferred. Since
the basic compound is likely to cause a recessed defect, the
content of the basic compound is preferably small as much as
possible. The content of the basic compound is preferably 0.04
mol/kg or less, more preferably 0.035 mol/kg or less, and further
preferably 0.03 mol/kg or less, based on the total amount of the
polishing liquid, from the viewpoint of further suppressing the
occurrence of defects. The content of the basic compound may be
0.01 mol/kg or more or 0.015 mol/kg or more, based on the total
amount of the polishing liquid.
[0107] [Other Additives]
[0108] The polishing liquid of the present embodiment can contain
an additive separately from the nitrogen-containing compound, the
polymer compound (A), the polymer compound (B), the pH adjusting
agent, and the dispersant. Examples of such an additive include
water-soluble polymer compounds. In the case of storing the
polishing liquid while being divided into a slurry and an additive
liquid, these other additives are preferably contained in the
additive liquid. Examples of the water-soluble polymer compound
include polysaccharides such as alginic acid, pectinic acid,
carboxymethyl cellulose, agar, curdlan, and pullulan. These
additives may be used singly or in combination of two or more kinds
thereof. The content thereof is preferably 0.01 to 5% by mass based
on the total mass of the polishing liquid.
[0109] (Water)
[0110] Water is not particularly limited, but deionized water,
ion-exchanged water, ultrapure water, and the like are preferred.
The content of water may be the balance of the content of the above
respective components and is not particularly limited as long as
water is contained in the polishing liquid. Incidentally, the
polishing liquid may further contain a solvent other than water,
for example, a polar solvent such as ethanol or acetone, as
necessary.
[0111] (pH)
[0112] The pH of the polishing liquid of the present embodiment is
preferably 3.0 or more, more preferably 3.5 or more, further
preferably more than 3.5, particularly preferably 4.0 or more,
extremely preferably more than 4.0, highly preferably 4.5 or more,
even more preferably 5.0 or more, further preferably 5.5 or more,
particularly preferably 6.0 or more, and extremely preferably more
than 6.0, from the viewpoint of easily obtaining an excellent
polishing rate of an insulating material and the viewpoint of
easily obtaining sufficient storage stability of the abrasive
grains and easily suppressing the occurrence of the aggregation of
the abrasive grains, and the like. The pH of the polishing liquid
of the present embodiment is preferably 8.0 or less, more
preferably less than 8.0, further preferably 7.5 or less,
particularly preferably 7.0 or less, and extremely preferably 6.5
or less, from the viewpoint of easily suppressing the occurrence of
defects (recessed defects and the like) and the viewpoint of easily
securing surface flatness after polishing (easily suppressing
dishing and the like). From these viewpoints, it is preferably 3.0
to 8.0, more preferably 3.5 or more and less than 8.0, further
preferably more than 3.5 and 7.5 or less, particularly preferably
4.0 to 7.5, extremely preferably more than 4.0 and 7.5 or less,
highly preferably 4.5 to 7.0, even more preferably 5.0 to 6.5,
further preferably 5.5 to 6.5, particularly preferably 6.0 to 6.5,
and extremely preferably more than 6.0 and 6.5 or less. The pH of
the polishing liquid of the present embodiment may be 6.0 or less,
from the viewpoint of particularly easily suppressing the
occurrence of defects (recessed defects and the like). The pH of
the polishing liquid of the present embodiment may be 6.5 or more,
7.0 or more, more than 7.0, and 7.5 or more, from the viewpoint of
easily obtaining a particularly excellent polishing rate of an
insulating material. The pH of the polishing liquid is the pH of
the polishing liquid at 25.degree. C.
[0113] The pH of the polishing liquid can be measured using a pH
meter (for example, trade name: Model PH81 manufactured by Yokogawa
Electric Corporation). For example, after 2-point calibration using
standard buffer solution (phthalate pH buffer solution, pH: 4.01
(25.degree. C.) and neutral phosphate pH buffer solution, pH: 6.86
(25.degree. C.)), the electrode is placed in the polishing liquid,
and a value upon stabilization after an elapse of 2 minutes or
longer at 25.degree. C. can be measured.
[0114] <Method for Producing Polishing Liquid>
[0115] A method for producing a polishing liquid of the present
embodiment includes a polishing liquid producing step of obtaining
a polishing liquid by mixing at least the abrasive grains, the
nitrogen-containing compound, and water. In the polishing liquid
producing step, the respective components may be mixed
simultaneously or the respective components may be mixed
sequentially. The method for producing a polishing liquid of the
present embodiment may include a step of obtaining abrasive grains
(for example, abrasive grains containing cerium) and a step of
obtaining of an additive (for example, the polymer compound (A)
and/or the polymer compound (B)), before the polishing liquid
producing step.
[0116] The method for producing the polishing liquid of the present
embodiment preferably includes a dispersing step of dispersing
abrasive grains in water. The dispersing step is, for example, a
step of mixing abrasive grains and a dispersant. In this case, the
dispersant is preferably added in the step of obtaining a slurry.
That is, a slurry preferably contains a dispersant. In the
dispersing step, for example, abrasive grains, a dispersant, and a
water are mixed, and the abrasive grains are dispersed in water to
obtain a slurry.
[0117] <Polishing Liquid Set>
[0118] The polishing liquid of the present embodiment may be stored
as a multi-pack type (for example, two-pack type) polishing liquid
set (for example, a polishing liquid set for CMP) while the
constituent components of the polishing liquid are divided into the
slurry and the additive liquid so that the slurry (first liquid)
and the additive liquid (second liquid) are mixed to obtain the
polishing liquid. The slurry contains, for example, at least
abrasive grains and water. The additive liquid contains, for
example, at least an additive (for example, the nitrogen-containing
compound) and water. The pH adjusting agent may be contained in the
slurry as long as the polarity of the potential of the abrasive
grains contained in the slurry is not changed. The constituent
components of the polishing liquid may be stored while being
divided into two liquids of a slurry and an additive liquid or may
be stored while being divided into three or more liquids.
[0119] In the polishing liquid set, the slurry and the additive
liquid are mixed immediately before polishing or during polishing
to prepare the polishing liquid. The multi-pack type polishing
liquid set may be stored as a stock solution for a slurry and a
stock solution for an additive liquid with a reduced water content,
and used by dilution with water immediately before the polishing or
during the polishing.
[0120] <Polishing Method>
[0121] A polishing method of the present embodiment includes a
polishing step of polishing a surface to be polished by using the
polishing liquid of the present embodiment or a polishing liquid
obtained by mixing the slurry and the additive liquid of the
polishing liquid set of the present embodiment. The surface to be
polished can contain, for example, a silicon material. The surface
to be polished may contain at least one selected from the group
consisting of polysilicon, amorphous silicon, and single-crystal
silicon, or may contain amorphous silicon.
[0122] The polishing method of the present embodiment is, for
example, a method for polishing a base substrate having a surface
to be polished containing a silicon material. The polishing step
may be a step of selectively (preferentially) polishing an
insulating material with respect to a silicon material (stopper
material). The polishing step may be a step of selectively
(preferentially) polishing silicon oxide with respect to a silicon
material (polysilicon, amorphous silicon, or the like). The
polishing step may be a step of polishing silicon oxide using a
silicon material (polysilicon, amorphous silicon, or the like) as a
stopper material. Examples of the stopper material include
single-crystal silicon, polysilicon, and amorphous silicon.
[0123] The polishing method of the present embodiment may be a
polishing method for a base substrate which has a first member
containing a silicon material and a second member containing an
insulating material and disposed on the first member. The polishing
step may include a step of polishing the second member until the
first member is exposed, by using the polishing liquid of the
present embodiment or a polishing liquid obtained by mixing the
slurry and the additive liquid of the polishing liquid set of the
present embodiment. The polishing step may include a step of
polishing the first member and the second member, by using the
polishing liquid of the present embodiment or a polishing liquid
obtained by mixing the slurry and the additive liquid of the
polishing liquid set of the present embodiment, after the first
member is exposed.
[0124] Examples of the insulating material include an inorganic
insulating material and an organic insulating material. Examples of
the inorganic insulating material include silicon-based insulating
materials. Examples of the silicon-based insulating material
include silica-based materials such as silicon oxide, silicon
nitride, fluorosilicate glass, organosilicate glass, and
hydrogenated silsesquioxane; silicon carbide; silicon nitride; and
carbon-containing silicon oxide.
[0125] Examples of the organic insulating material include wholly
aromatic based low dielectric constant insulating materials. The
insulating material (silicon oxide or the like) may be doped with
an element such as phosphorus or boron.
[0126] The polishing step may be a step of removing at least a part
of an insulating member (a member containing an insulating
material) using the polishing liquid of the present embodiment to
expose a stopper. For example, the polishing method of the present
embodiment may be a polishing method of polishing a base substrate
having an insulating member on the surface. The polishing method of
the present embodiment includes, for example, a base substrate
preparing step, a base substrate disposing step, and a polishing
step. In the base substrate preparing step, for example, a base
substrate having a stopper and an insulating member disposed on the
stopper is prepared. In the base substrate disposing step, for
example, the base substrate is disposed such that the insulating
member faces a polishing pad. In the polishing step, for example,
at least a part of the insulating member is removed. In the
polishing step, for example, while an insulating member of the base
substrate having the insulating member is pressed on a polishing
pad of a polishing platen, the polishing liquid is supplied between
the polishing pad and the insulating member, and the base substrate
and the polishing platen are relatively moved to polish and remove
at least a part of the insulating member. The shape of the
insulating member is not particularly limited, and for example, is
a film shape (an insulating film) The shape of the stopper is not
particularly limited, and for example, is a film shape (a stopper
film: for example, a polysilicon film or an amorphous silicon
film).
[0127] Examples of the base substrate include base substrates in
which an insulating member is formed on a substrate for
semiconductor element production (a semiconductor substrate at the
stage when a circuit element and a wiring pattern are formed, a
semiconductor substrate at the stage when a circuit element is
formed, or the like).
[0128] By polishing an insulating material formed on a
semiconductor substrate using the polishing liquid of the present
embodiment, irregularities on the surface of the insulating
material are eliminated and thus a flat and smooth surface over the
entire surface of the base substrate can be obtained. The polishing
method of the present embodiment can be used, for example, in the
flattening step of an interlayer insulating film, a BPSG film, or
the like, the STI formation step, and the like.
[0129] FIG. 2 is a schematic cross-sectional view illustrating an
example of a polishing method. First, as illustrated in FIG. 2(A),
a base substrate 100, which includes a wafer 1 in which
irregularities configured by concave portions (trench portions) and
convex portions (active portions) are formed on the surface,
stoppers 2 (for example, polysilicon films or amorphous silicon
films) formed on the convex portions of the wafer 1, and an
insulating member 3 (for example, a silicon oxide film) formed on
the wafer 1 and the stoppers 2 so as to fill the irregularities on
the surface of the wafer 1, is prepared. For example, the
insulating member 3 can be accumulated and formed by a plasma TEOS
method or the like.
[0130] Then, a base substrate 200 as illustrated in FIG. 2(B) is
obtained by polishing and removing the insulating member 3 until
the stoppers 2 on the convex portions of the wafer 1 are exposed,
by using the polishing liquid of the present embodiment. In the
base substrate 200 after the completion of polishing, a dishing
amount 6, which is a value obtained by subtracting a thickness 5 of
the insulating member 3 in the trench portion from a depth 4 of the
trench portion, is preferably small In addition, in the base
substrate 200, the number of recessed defects of the stoppers 2 is
preferably small.
[0131] Examples of the polishing apparatus include a polishing
apparatus (trade name: Mirra-3400, Reflexion LK) manufactured by
Applied Materials, Inc. and a polishing apparatus (trade name:
F-REX300) manufactured by EBARA CORPORATION.
[0132] As the polishing pad, common unwoven cloth, a foamed body,
an unfoamed body, and the like can be used. As the material of the
polishing pad, it is possible to use a resin such as polyurethane,
an acrylic resin, polyester, an acrylic-ester copolymer,
polytetrafluoroethylene, polypropylene, polyethylene,
poly-4-methylpentene, cellulose, cellulose ester, polyamide (for
example, Nylon (trade name) and aramid), polyimide, polyimidamide,
a polysiloxane copolymer, an oxirane compound, a phenolic resin,
polystyrene, polycarbonate, or an epoxy resin. As the material of
the polishing pad, particularly, from the viewpoint of obtaining a
further excellent polishing rate and further excellent flatness,
foamed polyurethane and unfoamed polyurethane are preferred. The
polishing pad may be subjected to groove processing by which the
polishing liquid accumulates thereon.
[0133] Polishing conditions are not limited, but the rotation speed
of the polishing platen is preferably 200 min.sup.-1 (rpm) or less
such that the base substrate is not let out, and the polishing
pressure (processing load) to be applied to the base substrate is
preferably 100 kPa or less from the viewpoint of sufficiently
suppressing the generation of polishing scratches. The polishing
liquid is preferably continuously supplied to the polishing pad
with a pump or the like during polishing. The amount supplied for
this is not limited, but it is preferable that the surface of the
polishing pad is always covered with the polishing liquid.
[0134] The base substrate after the completion of polishing is
preferably thoroughly washed in flowing water to remove the
particles adhering to the base substrate. For the washing, dilute
hydrofluoric acid or ammonia water may be used in addition to pure
water, and a brush may be used to increase the washing efficiency.
Further, it is preferable that, after washing, the water droplets
adhering to the base substrate are removed off using a spin dryer
or the like, and then the base substrate is dried.
[0135] As the base substrate to be polished by the polishing method
of the present embodiment, for example, base substrates including a
discrete semiconductor such as diode, transistor, compound
semiconductor, thermistor, varistor, or thyristor; a memory element
such as DRAM (dynamic random access memory), SRAM (static random
access memory), EPROM (erasable programmable read-only memory),
mask ROM (mask read-only memory), EEPROM (electrically erasable
programmable read-only memory), or flash memory; a logic circuit
element such as a microprocessor, DSP, or ASIC; an integrated
circuit element such as a compound semiconductor typified by MMIC
(monolithic microwave integrated circuit); a hybrid integrated
circuit (hybrid IC) or a photoelectric conversion element such as
light emitting diode or charge-coupled element; and the like can be
applied.
[0136] The polishing liquid of the present embodiment is not
limited to be applied to polishing of an insulating member or the
like formed on a semiconductor substrate as described in the
aforementioned embodiment, and can be applied to polishing of
inorganic insulating materials such as silicon oxide, glass, and
silicon nitride that are formed on circuit boards with
predetermined wirings; and materials mainly containing Al, Cu, Ti,
TiN, W, Ta, TaN, or the like.
[0137] As electronic components including a base substrate polished
by the polishing method of the present embodiment, various examples
are mentioned. Examples of electronic components include not only
semiconductor elements but also optical glass such as photomask,
lens, and prisms; inorganic conductive films such as ITO;
integrated optical circuits composed of glass and crystalline
materials; optical switching elements; optical waveguides; end
faces of optical fibers; optical single crystals such as
scintillators; solid laser single crystals; sapphire substrates for
blue laser LED; semiconductor single crystals such as SiC, Gal',
and GaAs; glass substrates for magnetic disk; and magnetic heads.
In these electronic components, each layer is polished by the
polishing liquid of the present embodiment so that high integration
can be achieved and excellent characteristics can be exhibited.
[0138] <Defect Suppression Method>
[0139] A defect suppression method of the present embodiment is a
defect suppression method suppressing the occurrence of defects in
polishing of a surface to be polished containing a stopper
material. The defect suppression method of the present embodiment
includes a polishing step of polishing a surface to be polished by
using the polishing liquid of the present embodiment or a polishing
liquid obtained by mixing the slurry and the additive liquid of the
polishing liquid set of the present embodiment. In the defect
suppression method of the present embodiment, by using the
nitrogen-containing compound acting as a defect inhibitor, the
occurrence of defects in polishing of a surface to be polished
containing a stopper material can be suppressed, and particularly,
the occurrence of defects based on chemical action can be
suppressed. For example, the defect suppression method of the
present embodiment further includes an observing step of observing
defects occurring in a surface to be polished, after the polishing
step. The stopper material may contain at least one selected from
the group consisting of polysilicon, amorphous silicon, and
single-crystal silicon, or may contain amorphous silicon.
EXAMPLES
[0140] Hereinafter, the present invention will be described by
means of Examples, but the present invention is not limited to
these Examples.
[0141] <Preparation of Constituent Components of Polishing
Liquid for CMP>
[0142] (Abrasive Grains)
[0143] [Cerium Oxide Particles]
[0144] 40 kg of commercially available cerium carbonate hydrate was
placed in an alumina container and fired at 830.degree. C. for 2
hours in air to obtain 20 kg of yellowish-white powder. This powder
was subjected to phase identification by an X-ray diffraction
method, by which it was identified as cerium oxide. 20 kg of cerium
oxide powder thus obtained was subjected to dry pulverization using
a jet mill to obtain cerium oxide powder containing cerium oxide
particles.
[0145] To measure the average particle size (D50) of the abrasive
grains, the abrasive grains and water were mixed to have a
transmittance (H) of 60 to 70%, as measured with respect to He--Ne
laser, thereby obtaining a measurement sample. The D50 of the
measurement sample was measured with a laser diffraction type
particle size distribution meter (trade name: LA-920, manufactured
by HORIBA, Ltd., refractive index: 1.93, light source: He--Ne
laser, absorption: 0), and as a result, the value of D50 was 150
nm.
[0146] [Silicon Oxide Particles]
[0147] As the silicon oxide particles, colloidal silica having an
average particle size of 60 nm was used.
[0148] (Additive)
[0149] As additives, the following compounds were prepared.
[0150] [Nitrogen-Containing Compound]
[0151] Compound (I): 3-hydroxypyridine
[0152] Compound (II): 2-aminopyridine, 3-aminopyridine,
4-aminopyridine, picolinamide, nicotinamide
[0153] Compound (III): pyrazine, pyrazinamide,
2,5-dimethylpyrazine, 2,3-diethylpyrazine,
2,3,5,6-tetramethylpyrazine
[0154] Compound (IV): benzotriazole, 1-phenyl-3-pyrazolidone
[0155] Compound (V): sulfanilamide, p-aminobenzoic acid amide
[0156] [Polymer Compound (A)]
[0157] Polyacrylic acid having a weight average molecular weight of
2500 (value in terms of sodium polyacrylate)
[0158] [Polymer Compound (B)]
[0159] Polyoxyethylene polyoxypropylene glycol ether having a
weight average molecular weight of 1200
[0160] [pH Adjusting Agent]
[0161] 25% by mass of ammonia water
[0162] [Other Additives]
[0163] As other additives, quinolinic acid, 1H-tetrazole, melamine,
aminotetrazole, p-toluene sulfonamide, and pyrazole were
prepared.
[0164] <Preparation of Polishing Liquid for CMP>
[0165] The constituent components prepared as described above were
dispersed or dissolved in water to have the contents of Tables 1 to
4, thereby obtaining a polishing liquid for CMP. In tables, the
content of the silicon oxide particles is the content of the solid
matters. The content of the pH adjusting agent indicates the
content of ammonia not containing moisture. The pH of the polishing
liquid for CMP was measured by trade name: Model PH81 manufactured
by Yokogawa Electric Corporation.
[0166] <Defect Evaluation>
[0167] As a test wafer for CMP evaluation of the number of defects,
a wafer having an amorphous silicon film on a silicon substrate was
prepared.
[0168] A polishing apparatus (Mirra manufactured by Applied
Materials, Inc.) was used in polishing of the test wafer for CMP
evaluation. The test wafer for CMP evaluation was set in a holder
mounting an adsorption pad for attachment of the base substrate. A
polishing pad made of a porous urethane resin (Model No. IC1000,
manufactured by Rohm & Haas Nitta Co.) was attached to a
polishing platen of the polishing apparatus. The holder was put on
the polishing platen while the surface on which the amorphous
silicon film was disposed faced downwards, and a processing load
was set to 3.6 psi (about 25 kPa).
[0169] While the polishing liquid for CMP was added dropwise onto
the polishing platen at a speed of 200 mL/min, the polishing platen
and the test wafer for CMP evaluation were rotated at 93 min.sup.-1
and 87 min.sup.-1, respectively, and polishing was performed for 60
seconds. The wafer after polishing was thoroughly washed with pure
water and dried.
[0170] Five sites in the center portion of the amorphous silicon
film were observed using an optical microscope (trade name:
DSX-510, manufactured by Olympus Corporation) under the conditions
of object lens: 20 times and magnification: 1.5 times, and the
number of recessed defects (recessed defect number) was counted.
The area of one viewing field was 0.5 mm.sup.2. The average value
of the five sites was acquired as the number of defects, the case
of the number of defects being 0 to 9 was evaluated as "A," the
case of the number of defects being 10 to 19 was evaluated as "B,"
the case of the number of defects being 20 to 99 was evaluated as
"C," and the case of the number of defects being 100 or more was
evaluated as "D." The results are shown in Tables 1 to 4. From
Tables 1 to 4, in Examples, it was clear that the occurrence of
defects can be suppressed (the evaluation was A, B, or C).
[0171] <Polishing Rate Evaluation>
[0172] A wafer having a silicon oxide film formed using a plasma
CVD method on a silicon substrate was prepared as a test wafer for
CMP evaluation of the polishing rate. The test wafer for CMP
evaluation was polished using a polishing apparatus (trade name:
Mirra, manufactured by Applied Materials, Inc.). Specifically,
first, the test wafer for CMP evaluation was set in a holder
mounting an adsorption pad for attachment of the substrate. Next, a
polishing cloth made of a porous urethane resin (Model No. IC1000,
manufactured by Rohm & Haas Nitta Co.) was attached to a
polishing platen of the polishing apparatus. The holder was put on
the polishing platen while the surface on which the silicon oxide
film was disposed faced downwards, and a processing load was set to
3.6 psi (about 25 kPa). Next, while the polishing liquid for CMP
was added dropwise onto the polishing platen at a speed of 200
mL/min, the polishing platen and the test wafer for evaluation were
rotated at 93 min.sup.-1 and 87 min.sup.-1, respectively, and the
test wafer for CMP evaluation was polished for 60 seconds. The
wafer after polishing was thoroughly washed with pure water and
then dried.
[0173] The film thickness of the silicon oxide film before and
after polishing was measured using a light interference type film
thickness measuring device (trade name: RE-3000, manufactured by
SCREEN Holdings Co., Ltd.). Then, the polishing rate (unit: nm/min)
of the silicon oxide film was calculated by dividing the average
value of the change amounts in film thickness by the polishing
time. The results are shown in Tables 1 to 4.
TABLE-US-00001 TABLE 1 Example Unit 1 2 3 4 5 6 7 8 9 Abrasive
Cerium oxide % by mass 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 grains
particles Nitrogen- Nicotinamide 0.1 0.1 0.1 0.1 -- -- -- -- --
containing 2,3,5,6 - -- -- -- -- 0.1 -- -- -- -- compound
Tetramethylpyrazine 2,3-Diethylpyrazine -- -- -- -- -- 0.1 -- -- --
2-Aminopyridine -- -- -- -- -- -- 0.1 -- -- 3-Aminopyridine -- --
-- -- -- -- -- 0.1 -- 4-Aminopyridine -- -- -- -- -- -- -- -- 0.1
Polyacrylic acid 0.3 -- 0.3 0.3 0.3 0.3 0.3 0.3 0.3 Polyoxyethylene
polyoxypropylene 0.04 0.04 -- 0.04 0.04 0.04 0.04 0.04 0.04 glycol
ether pH adjusting agent mol/kg 2.6E-02 1.0E-04 2.6E-02 -- 2.6E-02
2.6E-02 1.8E-02 2.1E-02 1.4E-02 pH -- 6.3 7.5 6.3 4.0 6.3 6.3 6.3
6.2 6.3 Defect Recessed defect number/ 3 1 3 1 8 7 8 3 5 evaluation
number 0.5 mm.sup.2 Recessed defect -- A A A A A A A A A evaluation
Polishing rate evaluation nm/min 320 340 330 60 300 310 320 320
320
TABLE-US-00002 TABLE 2 Example Unit 10 11 12 13 14 15 16 17 18
Abrasive Cerium oxide % by mass 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7
grains particles Nitrogen- 2,5- 0.1 -- -- -- -- -- -- -- --
containing Dimethylpyrazine compound Benzotriazole -- 0.1 -- -- --
-- -- -- -- Sulfanilamide -- -- 0.1 -- -- -- -- -- -- Picolinamide
-- -- -- 0.1 -- -- -- -- -- 1-Phenyl- -- -- -- -- 0.1 -- -- -- --
3-pyrazolidone Pyrazine -- -- -- -- -- 0.1 -- -- -- Pyrazinamide --
-- -- -- -- -- 0.1 -- -- 3-Hydroxy- -- -- -- -- -- -- -- 0.1 --
pyridine p-Aminobenzoic -- -- -- -- -- -- -- -- 0.1 acid amide
Polyacrylic acid 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
Polyoxyethylene 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04
polyoxypropylene glycol ether pH adjusting agent mol/kg 2.6E-02
2.6E-02 2.6E-02 2.6E-02 2.6E-02 2.6E-02 2.6E-02 2.6E-02 2.6E-02 pH
-- 6.3 6.3 6.3 6.3 6.3 6.3 6.3 6.3 6.3 Defect Recessed defect
number/ 4 2 3 8 8 4 2 14 18 evaluation number 0.5 mm.sup.2 Recessed
defect -- A A A A A A A B B evaluation Polishing rate evaluation
nm/min 310 280 300 310 300 320 320 290 310
TABLE-US-00003 TABLE 3 Example Unit 19 20 21 22 Abrasive grains
Cerium % by mass 0.7 0.7 0.7 -- oxide particles Silicon oxide -- --
-- 0.7 particles Nitrogen-containing Nicotinamide 0.005 0.01 1 0.1
compound Polyacrylic acid 0.3 0.3 0.3 0.3 Polyoxyethylene
polyoxypropylene 0.04 0.04 0.04 0.04 glycol ether pH adjusting
agent mol/kg 2.6E-02 2.6E-02 2.6E-02 2.6E-02 pH -- 6.3 6.3 6.3 6.1
Defect evaluation Recessed defect number/0.5 90 18 1 4 number
mm.sup.2 Recessed defect -- C B A A evaluation Polishing rate
evaluation nm/min 330 330 300 10
TABLE-US-00004 TABLE 4 Comparative Example Unit 1 2 3 4 5 6 7
Abrasive Cerium oxide % by mass 0.7 0.7 0.7 0.7 0.7 0.7 0.7 grains
particles Quinolinic acid -- 0.1 -- -- -- -- -- 1H-Tetrazole -- --
0.1 -- -- -- -- Melamine -- -- -- 0.1 -- -- -- Aminotetrazole -- --
-- -- 0.1 -- -- p-Toluenesulfonamide -- -- -- -- -- 0.1 -- Pyrazole
-- -- -- -- -- -- 0.1 Polyacrylic acid 0.3 0.3 0.3 0.3 0.3 0.3 0.3
Polyoxyethylene 0.04 0.04 0.04 0.04 0.04 0.04 0.04 polyoxypropylene
glycol ether pH adjusting agent mol/kg 2.6E-02 4.3E-02 4.8E-02
2.6E-02 2.6E-02 2.6E-02 2.6E-02 pH -- 6.3 6.3 6.3 6.6 6.3 6.3 6.3
Defect Recessed defect number/0.5 200 110 200 130 160 100 150
evaluation number mm.sup.2 Recessed defect -- D D D D D D D
evaluation Polishing rate evaluation nm/min 330 330 280 300 290 300
280
REFERENCE SIGNS LIST
[0174] 1: wafer, 2: stopper, 3: insulating member, 4: depth, 5:
thickness, 6: dishing amount, 100, 200: base substrate.
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