U.S. patent application number 16/664013 was filed with the patent office on 2020-09-03 for sic film structure and method for manufacturing sic film structure.
This patent application is currently assigned to ADMAP INC.. The applicant listed for this patent is ADMAP INC.. Invention is credited to Satoshi KAWAMOTO.
Application Number | 20200279732 16/664013 |
Document ID | / |
Family ID | 1000004565316 |
Filed Date | 2020-09-03 |
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United States Patent
Application |
20200279732 |
Kind Code |
A1 |
KAWAMOTO; Satoshi |
September 3, 2020 |
SiC FILM STRUCTURE AND METHOD FOR MANUFACTURING SiC FILM
STRUCTURE
Abstract
A SiC film structure capable of providing a sealing structure. A
SiC film structure for obtaining a three-dimensional SiC film by
forming the SiC film in an outer circumference of a substrate using
a vapor deposition type film formation method and removing the
substrate, the SiC film structure including: a main body having a
three-dimensional shape formed of a SiC film and having an opening
for removing the substrate; and a lid configured to cover the
opening.
Inventors: |
KAWAMOTO; Satoshi;
(Tamano-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ADMAP INC. |
Tamano-shi |
|
JP |
|
|
Assignee: |
ADMAP INC.
Tamano-shi
JP
|
Family ID: |
1000004565316 |
Appl. No.: |
16/664013 |
Filed: |
October 25, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
16498249 |
|
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|
PCT/JP2019/033684 |
Aug 28, 2019 |
|
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16664013 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/02167 20130101;
H01L 21/50 20130101; H01L 21/02271 20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02; H01L 21/50 20060101 H01L021/50 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 28, 2019 |
JP |
2019-036720 |
Claims
1. A SiC film structure for obtaining a three-dimensional SiC film
by forming a SiC film in an outer circumference of a substrate
using a vapor deposition type film formation method and removing
the substrate, the SiC film structure comprising: a main body
having a three-dimensional shape formed of a SiC film and having an
opening configured to expose a part of the substrate to remove the
substrate; and a lid configured to cover the opening to form a
sealing structure for sealing the SiC film structure.
2. The SiC film structure according to claim 1, wherein the lid is
formed of a SiC film.
3. The SiC film structure according to claim 1, wherein the lid has
a boss portion fitted to the opening and a flange portion
overhanging to an outer circumference of the boss portion to cover
the opening.
4. A method for manufacturing a SiC film structure for obtaining a
three-dimensional SiC film by forming a SiC film in an outer
circumference of a substrate using a vapor deposition type film
formation method and removing the substrate, the method comprising:
a film formation process of forming the SiC film in the outer
circumference of the substrate while exposing a part of the
substrate; a substrate removal process of removing the substrate
after the film formation process; and a sealing process of covering
an opening of the SiC film subjected to the substrate removal with
a lid to form a sealing structure for sealing the SiC film
structure.
5. The method according to claim 4, wherein the sealing process
includes a process of covering a contact portion between the lid
and the SiC film with a new SiC film.
6. The method according to claim 5, wherein the sealing process is
performed while a spacer that can be burned out by heating is
interposed between the SiC film and the lid.
7. The SiC film structure according to claim 2, wherein the lid has
a boss portion fitted to the opening and a flange portion
overhanging to an outer circumference of the boss portion to cover
the opening.
Description
[0001] This is a Division of application Ser. No. 16/498,249 filed
Sep. 26, 2019, which in turn is a U.S. National Stage Application
of International Application No. PCT/JP2019/033684 filed Aug. 28,
2019, which claims the benefit of Japanese Application No.
2019-036720 filed Feb. 28, 2019. The disclosure of the prior
applications is hereby incorporated by reference herein in its
entirety.
FIELD OF THE INVENTION
[0002] The present invention relates to a SiC film formation
technology, and more particularly, to a three-dimensional structure
formed of a SiC film and a method for manufacturing the same.
BACKGROUND OF THE INVENTION
[0003] Due to its excellent environmental resistance and high
chemical stability, especially in the field of semiconductor device
manufacturing, demands for a single-film structure formed of SiC as
a tool used at a very high temperature, such as a wafer boat or
tube and a dummy wafer, in semiconductor manufacturing, are
increasing.
[0004] A structure formed of such a SiC film (hereinafter, referred
to as a "SiC film structure") can be used to manufacture a
three-dimensional shape as well as a planar shape. As a specific
manufacturing method thereof, for example, the technique discussed
in Patent Document 1 is known in the art. In the manufacturing
method of the SiC film structure discussed in Patent Document 1,
first, a substrate formed of carbon (graphite) or the like is
fabricated. Then, a SiC film is formed on a surface of the
substrate using a chemical vapor deposition (CVD) method.
[0005] Then, the substrate is burned out by heating the substrate
subjected to the deposition under a high-temperature oxidation
atmosphere. By performing the substrate removal through such a
process, it is possible to obtain a SiC film structure in which the
substrate can be removed even when the structure has a complicated
three-dimensional shape which may make it difficult to remove the
substrate through mechanical machining.
CITATION LIST
Patent Documents
[0006] Patent Document 1: Japanese Unexamined Patent Application
Publication No. 2001-158666
SUMMARY OF THE INVENTION
[0007] For a SiC film structure formed in this manner with a
three-dimensional shape, it is necessary to form the SiC film
partially or entirely on the surface of the substrate and remove
the substrate. However, in order to remove the substrate, it is
necessary to prepare an oxidation hole for exposing a part of the
substrate. Therefore, it is difficult to provide perfect sealing in
the SiC film structure.
[0008] If such an oxidation hole remains in the SiC film structure
configured as a product, moisture such as a chemical solution may
intrude during cleaning or the like, which may generate a portion
suffering from difficulty in drying.
[0009] In this regard, an object of the present invention is to
address the aforementioned problems and provide a SiC film
structure capable of providing a sealing structure and a method for
manufacturing the SiC film structure having such an effect.
[0010] In order to achieve the aforementioned object, according to
the present invention, there is provided a SiC film structure for
obtaining a three-dimensional SiC film by forming a SiC film in an
outer circumference of a substrate using a vapor deposition type
film formation method and removing the substrate, the SiC film
structure including: a main body having a three-dimensional shape
formed of a SiC film and having an opening configured to expose a
part of the substrate to remove the substrate; and a lid configured
to cover the opening to form a sealing structure for sealing the
SiC film structure.
[0011] In the SiC film structure described above, it is preferable
that the lid is formed of a SiC film. Accordingly, it is possible
to form the SiC film structure as a SiC single-film structure. In
addition, since the thermal expansion coefficients can match
between the main body and the lid, it is possible to prevent
distortion caused by a temperature change.
[0012] In the SiC film structure described above, it is preferable
that the lid has a boss portion fitted to the opening and a flange
portion overhanging to an outer circumference of the boss portion
to cover the opening. Accordingly, it is possible to easily
position the lid and seal the opening even when the structure is
miniaturized.
[0013] In order to achieve the aforementioned object, according to
the present invention, there is provided a method for manufacturing
a SiC film structure for obtaining a three-dimensional SiC film by
forming a SiC film in an outer circumference of a substrate using a
vapor deposition type film formation method and removing the
substrate, the method including: a film formation process of
forming the SiC film in the outer circumference of the substrate
while exposing a part of the substrate; a substrate removal process
of removing the substrate after the film formation process; and a
sealing process of covering an opening of the SiC film subjected to
the substrate removal with a lid to form a sealing structure for
sealing the SiC film structure.
[0014] In the method for manufacturing the SiC film structure
having the characteristics described above, the sealing process can
include a process of covering a contact portion between the lid and
the SiC film with a new SiC film. Due to such a characteristic, it
is possible to form the SiC film structure as a SiC single-film
structure. In addition, since the thermal expansion coefficients
can match between the main body and the lid formed of the SiC film
after removing the substrate, it is possible to prevent distortion
caused by a temperature change.
[0015] In the method for manufacturing the SiC film structure
having the characteristics described above, it is preferable that
the sealing process is performed while a spacer that can be burned
out by heating is interposed between the SiC film and the lid. Due
to such a characteristic, a gap is provided between the main body
and the lid formed of the SiC film, so that the internal gas can be
degassed or can be replaced with an inert gas or the like. In
addition, even when the sealing process is performed in a furnace,
the spacer is removed by heating in the sealing process, and the
opening is sealed.
[0016] Using the SiC film structure having the characteristics
described above, it is possible to obtain a sealing structure
without any opening in the main body having a three-dimensional
shape. In addition, using the method for manufacturing the SiC film
structure having the characteristics described above, it is
possible to obtain a sealing structure for the manufactured SiC
film structure.
BRIEF DESCRIPTION OF DRAWINGS
[0017] FIG. 1 is a diagram illustrating a configuration of a SiC
film structure according to an embodiment of the invention;
[0018] FIGS. 2A to 2F are diagrams for describing a manufacturing
method of the SiC film structure according to an embodiment of the
invention;
[0019] FIG. 3 is a diagram illustrating a SiC film structure
according to a first modification; and
[0020] FIG. 4 is a diagram illustrating a SiC film structure
according to a second modification.
DESCRIPTION OF EMBODIMENTS
[0021] A SiC film structure and a method for manufacturing the SiC
film structure according to an embodiment of the invention will now
be described in details with reference to the accompanying
drawings. Note that the following embodiments are a part of
preferable modes for embodying the invention, and even some
modifications for a part of the configuration may be regarded as a
part of the invention as long as a specific requirement of the
invention is satisfied.
Configuration
[0022] According to this embodiment, the SiC film structure 10
basically includes a main body 12, a lid 14, and a SiC coat layer
16 as illustrated in FIG. 1. The main body 12 is a hollow member
having a three-dimensional shape and has an opening 12a at least in
a part thereof. The opening 12a is provided to communicate with the
hollow portion 12b. Note that the main body 12 is formed of a SiC
(silicon carbide) film.
[0023] The lid 14 is an element for sealing the opening 12a
provided in the main body 12. In the example of FIG. 1, the lid has
a boss portion 14a and a flange portion 14b. The boss portion 14a
is an element fitted to the opening 12a provided in the main body
12 for positioning, and the flange portion 14b is an element
overhanging from one end side of the boss portion 14a to an outer
circumference of the boss portion 14a to cover the opening 12a. Due
to the flange portion 14b, it is possible to prevent the boss
portion 14a from falling to the inside of the main body 12. For
this reason, there is no problem even when a clearance between the
boss portion 14a and the opening 12a slightly increases. In
addition, it is not necessary to prepare treatment or the like for
improving accuracy.
[0024] The lid 14 may be formed of any material without a
particular limitation. Preferably, the lid 14 is formed of a member
having resistance to temperature, chemicals, or the like, that is,
high environmental resistance. Note that, according to this
embodiment, the lid 14 is formed of SiC. As a result, the SiC film
structure 10 can be formed as a SiC single-film structure. If the
lid 14 is formed of the same member as that of the main body 12,
there is no possibility of causing distortion or the like caused by
a difference in thermal expansion coefficient even under a
high-temperature or low-temperature environment.
[0025] The SiC coat layer 16 is an element that joins the main body
12 and the lid 14. For this reason, the SiC coat layer 16 is formed
to cover at least a contact portion between the main body 12 and an
outer edge portion of the lid 14. In the configuration of FIG. 1,
the SiC coat layer 16 is formed to cover a surface of the flange
portion 14b formed on the lid 14 and cover the main body 12
positioned in the outer circumference of the flange portion
14b.
[0026] In the SiC film structure 10 having the aforementioned
configuration, it is possible to obtain a perfect sealing structure
even in a three-dimensional shape formed of the SiC film. As a
result, even when cleaning or the like is performed for the SiC
film structure 10, it is possible to prevent a chemical solution or
the like from intruding to the inside, which may make cleaning or
drying difficult.
Manufacturing Process
[0027] A manufacturing process of the SiC film structure 10
according to this embodiment will be described with reference to
FIGS. 2A to 2F. First, as illustrated in FIG. 2A, a substrate 50
having a three-dimensional shape is formed. There is no particular
limitation in the shape of the substrate 50. Note that, in the
example of FIG. 2A, the substrate 50 is illustrated as a
rectangular shape for easy description. The substrate 50 is
preferably formed of a material that can be relatively easily
removed through heating or using chemicals, such as graphite or
silicon. According to this embodiment, graphite is employed as a
material of the substrate 50 because it can be burned out by
heating under a high-temperature oxidation atmosphere. Note that a
masking 52 for forming the opening 12a is applied to at least a
part of the substrate 50.
[0028] Then, as illustrated in FIG. 2B, the SiC film of the main
body 12 is formed on the surface of the substrate 50 through a
vapor deposition type film formation method. Note that the vapor
deposition type film formation method may include, for example, a
chemical vapor deposition (CVD) method. Alternatively, the vapor
deposition type film formation method may include a vacuum type
physical vapor deposition (PVD) method, a molecular beam epitaxy
(MBE) method, or the like, but not limited thereto. There is no
particular limitation in the film thickness of the SiC film.
However, it is necessary to provide a film thickness by which the
SiC film has a self-supporting strength as a three-dimensional
structure when the substrate 50 is removed.
[0029] After forming the SiC film in an outer circumference of the
substrate 50, a part of the substrate 50 is exposed by removing the
masking 52 as illustrated in FIG. 2C. Then, the substrate 50
subjected to the deposition is removed by heating under a
high-temperature oxidation atmosphere. If the substrate 50 is
formed of graphite as in this embodiment, the substrate 50 is
burned out as carbon dioxide.
[0030] After removing the substrate 50, the lid 14 is placed in the
opening 12a of the main body 12 as illustrated in FIG. 2D. Note
that the process of forming the lid 14 may be performed separately
from, before/after, or in parallel with the process of forming the
main body 12.
[0031] After placing the lid 14 in the opening 12a, a masking 54 is
applied to the outer circumference of the main body 12 so as to
slightly expose the main body 12 to the outer circumference of the
flange portion 14b of the lid 14 as illustrated in FIG. 2E. After
the masking 54 is applied, SiC is deposited so as to cover the lid
positioned in the opening of the masking and the exposed portion of
the main body in order to form a SiC coat layer. The process of
forming the SiC coat layer may be performed similarly to the film
formation process of FIG. 2B. Note that the processes of FIGS. 2D
to 2E may be performed in the air or under a vacuum atmosphere. In
addition, the lid 14 may be sealed after replacing the internal gas
with an inert gas or the like in a furnace. Note that, when the
internal gas of the main body 12 is degassed or replaced under the
unmanned environment, the operation may be performed by interposing
a spacer (not shown) or the like between the opening 12a and the
lid 14. If the spacer is formed of a material that is burned out by
heating, such as silicon, the spacer is removed in the film
formation process after degassing or replacement. For this reason,
a gap provided for degassing or replacement is removed, and the
opening 12a is sealed.
[0032] By removing the masking 54 after completing joining and
sealing between the lid 14 and the main body 12 using the SiC coat
layer as illustrated in FIG. 2F, the SiC film structure 10 is
finally obtained.
Modifications
[0033] In the aforementioned embodiment, the SiC coat layer 16 is
formed to entirely cover the lid 14 when the opening 12a of the
main body 12 is sealed with the lid 14. However, the SiC coat layer
16 may be configured to cover a contact portion between the main
body 12 and the outer edge portion of the lid 14. That is, as
illustrated in FIG. 3, the SiC coat layer 16 may be placed on the
outer circumference without providing the SiC coat layer 16 in the
vicinity of the center of the lid 14. This is because the opening
12a of the main body 12 is sealed even in this configuration.
[0034] In the aforementioned embodiment, the lid 14 has the boss
portion 14a and the flange portion 14b, and the boss portion 14a is
fitted to the opening 12a for positioning of the lid 14. However,
the lid 14 may have any configuration as long as the opening 12a of
the main body 12 can be sealed. For this reason, the lid 14 may be
formed as a flat plate as illustrated in FIG. 4. The function of
the lid 14 can be achieved as long as it can cover the opening
12a.
REFERENCE SIGNS LIST
[0035] 10 SiC film structure, [0036] 12 main body, [0037] 12a
opening, [0038] 12b hollow portion, [0039] 14 lid, [0040] 14a boss
portion, [0041] 14b flange portion, [0042] 16 SiC coat layer,
[0043] 50 substrate, [0044] 52 masking, [0045] 54 masking.
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