U.S. patent application number 16/868566 was filed with the patent office on 2020-08-20 for method for producing an optoelectronic device, and an optoelectronic device produced by the method.
The applicant listed for this patent is OSRAM OLED GmbH. Invention is credited to Arne Fleissner, Erwin Lang, Nina Riegel, Sebastian Wittmann.
Application Number | 20200266370 16/868566 |
Document ID | 20200266370 / US20200266370 |
Family ID | 1000004812856 |
Filed Date | 2020-08-20 |
Patent Application | download [pdf] |
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United States Patent
Application |
20200266370 |
Kind Code |
A1 |
Wittmann; Sebastian ; et
al. |
August 20, 2020 |
METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE, AND AN
OPTOELECTRONIC DEVICE PRODUCED BY THE METHOD
Abstract
In various aspects, an optoelectronic device is provided. The
device may include a first substrate having a first non-planar
shape, wherein the first substrate comprises a first shape memory
material, a second substrate having a second non-planar shape,
wherein the second substrate comprises a second shape memory
material, and at least one optoelectronic component, arranged
between the first substrate and the second substrate, wherein the
first substrate is arranged in a coplanar or substantially coplanar
manner with respect to the second substrate.
Inventors: |
Wittmann; Sebastian;
(Regensburg, DE) ; Fleissner; Arne; (Regensburg,
DE) ; Lang; Erwin; (Regensburg, DE) ; Riegel;
Nina; (Tegernheim, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
OSRAM OLED GmbH |
Regensburg |
|
DE |
|
|
Family ID: |
1000004812856 |
Appl. No.: |
16/868566 |
Filed: |
May 7, 2020 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15786643 |
Oct 18, 2017 |
10693088 |
|
|
16868566 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2251/5338 20130101;
H01L 51/5225 20130101; H01L 51/5209 20130101; H01L 2251/5361
20130101; H01L 51/5246 20130101; H01L 51/56 20130101; H01L 51/0097
20130101; H01L 2251/56 20130101; H01L 51/5253 20130101 |
International
Class: |
H01L 51/00 20060101
H01L051/00; H01L 51/56 20060101 H01L051/56; H01L 51/52 20060101
H01L051/52 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 19, 2016 |
DE |
10 2016 119 906.0 |
Claims
1. An optoelectronic device, comprising: a first substrate having a
first non-planar shape, wherein the first substrate comprises a
first shape memory material, a second substrate having a second
non-planar shape, wherein the second substrate comprises a second
shape memory material, and at least one optoelectronic component,
arranged between the first substrate and the second substrate,
wherein the first substrate is arranged in a coplanar or
substantially coplanar manner with respect to the second
substrate.
2. The optoelectronic device according to claim 1, wherein the
second non-planar shape is identical or substantially identical to
the first non-planar shape.
3. The optoelectronic device according to claim 1, wherein the
first non-planar shape and the second non-planar shape each
comprise at least one curvature or at least one bend.
4. The optoelectronic device according to claim 1, wherein the
first shape memory material and/or the second shape memory material
comprises a metallic alloy or at least one polymer.
5. The optoelectronic device according to claim 1, wherein the at
least one optoelectronic component is laminated to the first
substrate and/or the second substrate.
6. The optoelectronic device according to claim 1, wherein the
optoelectronic device is a display or a luminous module.
7. The optoelectronic device according to claim 1, wherein the at
least one optoelectronic component comprises an electromagnetic
radiation emitting component.
8. The optoelectronic device according to claim 1, wherein the at
least one optoelectronic component comprises an organic light
emitting diode.
9. The optoelectronic device according to claim 1 comprising a
plurality of light emitting components which are accommodated in a
common housing.
10. The optoelectronic device according to claim 1, wherein the at
least one optoelectronic component comprises a first electrode on
the first substrate, an organic functional layer stack on the first
electrode, and a second electrode on the organic functional layer
stack.
11. The optoelectronic device according to claim 1, wherein the
optoelectronic device is flexible.
12. A method for producing an optoelectronic device, the method
comprising: providing a first substrate and a second substrate,
wherein the first substrate and the second substrate are formed in
each case in a non-planar shape or are brought to the non-planar
shape, reshaping the first substrate and the second substrate in
each case to a planar or substantially planar shape, forming at
least one optoelectronic component on the first substrate having
the planar shape or having the substantially planar shape or on the
second substrate having the planar shape or having the
substantially planar shape, wherein the at least one optoelectronic
component is formed between the first substrate and the second
substrate, and reshaping the first substrate having the planar
shape or having the substantially planar shape and the second
substrate having the planar shape or having the substantially
planar shape in each case to a final non-planar shape.
13. The method according to claim 12, wherein the reshaping of the
first substrate and/or of the second substrate comprises mechanical
reshaping.
14. The method according to claim 13, wherein the reshaping
comprises a fixing by a releasable, mechanical connection.
15. The method of claim 13, wherein the reshaping comprises a
fixing by a releasable, mechanical clamping.
16. An optoelectronic device, comprising: a first substrate having
a first non-planar shape, wherein the first substrate comprises a
first shape memory material, a second substrate having a second
non-planar shape, wherein the second substrate comprises a second
shape memory material, and at least one optoelectronic component
arranged between the first substrate and the second substrate,
wherein the first non-planar shape and the second non-planar shape
have a similar curvature with respect to one another.
17. The optoelectronic device of claim 16, wherein the at least one
optoelectronic component is laminated to the first substrate and/or
the second substrate.
18. The optoelectronic device of claim 16, wherein the first
non-planar shape and the second non-planar shape each comprise at
least one bend.
19. The optoelectronic device of claim 18, wherein a shape of the
at least one optoelectronic component is provided by the similar
curvatures of the first substrate and the second substrate.
20. The optoelectronic device of claim 19, wherein the at least one
optoelectronic component is formed in a neutral axis region of the
optoelectronic device so that the at least one optoelectronic
component is subject to reduced compression and/or extension.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of U.S. application Ser.
No. 15/786,643 filed on Oct. 18, 2017, which claims priority to
German Patent Application Serial No. 10 2016 119 906.0 filed on
Oct. 19, 2016, both of which are herein incorporated by reference
in their entirety.
TECHNICAL FIELD
[0002] Various aspects relate generally to a method for producing
an optoelectronic device, and to an optoelectronic device produced
by the method.
BACKGROUND
[0003] Optoelectronic components on an organic basis, so-called
organic optoelectronic components, are finding increasingly
widespread application. By way of example, organic light emitting
diodes (OLEDs) are increasingly making inroads into general
lighting, for example as surface light sources. An optoelectronic
component including an organic light emitting diode as emission
unit includes a multiplicity of (organic) layers. Nowadays there is
growing interest in OLED luminous surfaces or OLED displays having
a 3D appearance.
[0004] In order to impart a permanent 3D or 2.5D appearance to OLED
luminous surfaces or OLED displays, these are generally applied on
a correspondingly 3D-shaped holder composed of plastic or metal,
for example by an adhesive. In this case, 2.5D appearance is
understood to mean a two-dimensional area having depth
information.
[0005] For fixing the OLED luminous surfaces or OLED displays on
said 3D-shaped holder by means of said method, an expenditure of
force is necessary in order to overcome the restoring forces of the
holder. Said force is exerted inter alia by way of pressure on the
active area of the OLED, which can lead to defects in the OLED. The
pressure can for example cause particle contaminations to be
impressed into the organic layers of the OLED, which can in turn
lead to a short circuit and a failure of the OLED component.
[0006] In order to produce OLED luminous surfaces or OLED displays
having a 3D or 2.5D appearance, it is furthermore known to fix the
OLEDs temporarily, for example by vacuum, on a negative mold,
followed by adhesive bonding of the OLEDs into the actual mold
(positive mold) by an adhesive. During the curing of the adhesive,
the OLEDs are fixed between the mold and the negative mold.
SUMMARY
[0007] In various aspects, an optoelectronic device is provided.
The device may include a first substrate having a first non-planar
shape, wherein the first substrate comprises a first shape memory
material, a second substrate having a second non-planar shape,
wherein the second substrate comprises a second shape memory
material, and at least one optoelectronic component, arranged
between the first substrate and the second substrate, wherein the
first substrate is arranged in a coplanar or substantially coplanar
manner with respect to the second substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] In the drawings, like reference characters generally refer
to the same parts throughout the different views. The drawings are
not necessarily to scale, emphasis instead generally being placed
upon illustrating the principles of the disclosure. In the
following description, various aspects of the disclosure are
described with reference to the following drawings, in which:
[0009] FIGS. 1A to 1D show schematic sectional illustrations
concerning a method for producing an optoelectronic device in
accordance with various aspects;
[0010] FIG. 2 shows a schematic cross-sectional view of an
optoelectronic component in accordance with various aspects;
[0011] FIGS. 3A and 3B show schematic sectional illustrations
concerning a method for producing an optoelectronic device in
accordance with various aspects; and
[0012] FIGS. 4A to 4D show schematic sectional illustrations
concerning a method for producing an optoelectronic device in
accordance with various aspects.
DESCRIPTION
[0013] The following detailed description refers to the
accompanying drawings that show, by way of illustration, specific
details and aspects in which the disclosure may be practiced.
[0014] The word "exemplary" is used herein to mean "serving as an
example, instance, or illustration". Any aspect or design described
herein as "exemplary" is not necessarily to be construed as
preferred or advantageous over other aspects or designs.
[0015] In the following detailed description, reference is made to
the accompanying drawings, which form part of this description and
show for illustration purposes specific aspects in which the
disclosure can be implemented. Since component parts of aspects can
be positioned in a number of different orientations, the direction
terminology serves for illustration and is not restrictive in any
way whatsoever. It goes without saying that other aspects can be
used and structural or logical changes can be made, without
departing from the scope of protection of the present disclosure.
It goes without saying that the features of the various aspects
described herein can be combined with one another, unless
specifically indicated otherwise. Therefore, the following detailed
description should not be interpreted in a restrictive sense, and
the scope of protection of the present disclosure is defined by the
appended claims. In the figures, identical or similar elements are
provided with identical reference signs, in so far as this is
expedient.
[0016] In the context of this description, the terms "connected"
and "coupled" are used to describe both a direct and an indirect
connection and a direct or indirect coupling. In the figures,
identical or similar elements are provided with identical reference
signs, in so far as this is expedient.
[0017] In the context of this description, an optoelectronic device
is understood to mean an optoelectronic assembly including one, two
or more optoelectronic components. The optoelectronic device can be
formed for example as a display or a luminous module.
[0018] In the context of this description, an optoelectronic
component can be understood to mean a component which emits or
absorbs electromagnetic radiation by means of a semiconductor
component.
[0019] An electromagnetic radiation absorbing component can be for
example a solar cell or a photodetector.
[0020] In various aspects, an electromagnetic radiation emitting
component can be an electromagnetic radiation emitting
semiconductor component and/or can be formed as an electromagnetic
radiation emitting diode, as an organic electromagnetic radiation
emitting diode, as an electromagnetic radiation emitting transistor
or as an organic electromagnetic radiation emitting transistor. The
radiation can be for example light in the visible range, UV light
and/or infrared light. In this context, the electromagnetic
radiation emitting component can be formed for example as a light
emitting diode (LED), as an organic light emitting diode (OLED), as
a light emitting transistor or as an organic light emitting
transistor. In various aspects, the light emitting component can be
part of an integrated circuit. Furthermore, a plurality of light
emitting components can be provided, for example in a manner
accommodated in a common housing.
[0021] An organic optoelectronic component includes an organic
functional layer system, which is also referred to synonymously as
an organic functional layer structure. The organic functional layer
structure includes or is formed from an organic substance or an
organic substance mixture that is configured for example for
providing an electromagnetic radiation from an electric current
provided or for providing an electric current from an
electromagnetic radiation provided. The radiation can be for
example light in the visible range, UV light and/or infrared light.
An organic light emitting diode is formed as a so-called top
emitter and/or a so-called bottom emitter. In the case of a bottom
emitter, electromagnetic radiation is emitted from the electrically
active region through the substrate. In the case of a top emitter,
electromagnetic radiation is emitted from the top side of the
electrically active region and not through the substrate.
[0022] The term "shape memory material" is understood to mean a
material that has the property of having a shape different from its
original shape temporarily or reversibly after a mechanical
deformation, for example an elastic deformation, and of assuming
its original shape again by means of an external stimulus. The
shape memory material can be reshaped and embossed in such a way
that specific configurations and changes in shape of the shape
memory material can be maintained. The phenomenon of the shape
memory property is a function of the material as such which the
material acquires after suitable steps, for example after reshaping
of the shape memory material above the transition temperature of
the shape memory material and rapid cooling of the shape memory
material.
[0023] The term "permanent shape" of the shape memory material
(permanent form) is a term specific to shape memory material. This
involves a shape of the shape memory material which is retained in
the memory of the shape memory material. The shape memory material
is embossed with the permanent shape, for example after reshaping
of the shape memory material into a shape above the transition
temperature of the shape memory material and rapid cooling of the
shape memory material. The permanent shape can also be referred to
as the original shape of the shape memory material. After reshaping
of the shape memory material embossed with the permanent shape, the
shape memory material is reshaped back into the permanent shape by
means of a stimulus. In various aspects in which the substrate is
formed from or includes shape memory material, the permanent shape
is also understood as the first state of the substrate.
[0024] The term "temporary shape" of the shape memory material is a
term specific to shape memory material. This involves the shape of
the shape memory material which is different from the permanent
shape of the shape memory material. The temporary shape of the
shape memory material can be obtained for example after reshaping
of the substrate having the permanent shape, for example by means
of a mechanical deformation, for example an elastic deformation of
the shape memory material. The temporary shape of the shape memory
material is a shape that is reversible to the permanent shape of
the shape memory material. The temporary shape can also be referred
to as temporary form. In various aspects in which the substrate is
formed from or includes shape memory material, the temporary shape
is also understood as the second state of the substrate.
[0025] In the context of this description, an external stimulus can
be understood to mean an alteration of a physical parameter or of
the value of a physical variable, which initiate the shape memory
effect in the case of a predefined shape memory material. A
stimulus for a multiplicity of different shape memory materials is
for example an alteration of the temperature above a specific
switching temperature (also referred to as transition or limit
temperature). Such a switching temperature is for example the glass
transition temperature or the melting point of the shape memory
material. Alternatively or additionally, an irradiation with light
of a predefined wavelength, for example by means of UV light, can
initiate a crosslinking of the shape memory material. Further
stimuli may be an alteration of a magnetic field or an alteration
of a mechanical stress.
[0026] In the context of this description, a 3D appearance of the
optoelectronic device can be understood to mean that the spatial
representation of an image of the optoelectronic device is
three-dimensional. In the context of this description, a 2.5D
appearance of the optoelectronic device can be understood to mean
that the spatial representation of an image of the optoelectronic
device is two-dimensional with additional depth information.
[0027] In the context of this description, a neutral axis of an
optoelectronic component or an optoelectronic device can be
understood to mean that region of the layer cross section which is
not subject to extension or compression upon bending, i.e. upon
exertion of tensile forces and compressive forces on the cross
section.
[0028] In the bending region, the substance or the substance
mixture can be extended at the outer side of the layer cross
section with respect to the bending edge, while the substance or
the substance mixture is compressed at the inner edge.
[0029] The position of the neutral axis in the layer cross section
of the optoelectronic component may be dependent on the moduli of
elasticity of the layers in the layer cross section. The neutral
axis may also be referred to as neutral phase.
[0030] In the context of this description, the term "reactive" is
used to describe a property of the media, compounds or additives of
being able to be converted in a reaction with the components of the
polymer which lead to chemical or physical network points or
crosslinked points in and with the polymer. This can be carried out
by means of an irradiation or treatment, for example a thermal
treatment, for example a heating, an IR irradiation, an irradiation
with .gamma.-radiation, an irradiation with .beta.-radiation, a
magnetic and/or electric field, a UV light.
[0031] Various aspects provide a cost-effective, simple method for
producing an optoelectronic device including at least one
optoelectronic component, said optoelectronic device having a 3D or
2.5D appearance, wherein the method prevents or avoids an
occurrence of defects in the at least one optoelectronic component
of the optoelectronic device during the production of the
optoelectronic device.
[0032] The method which prevents or avoids defects in the
optoelectronic components of the optoelectronic device should
alternatively or additionally be carried out in such a way that,
for reshaping the optoelectronic device having a 3D or 2.5D
appearance, no external forces on the active area are necessary,
for example no or substantially no mechanical pressure is exerted
on the active area.
[0033] Various aspects provide an optoelectronic device produced by
the method, the shape of which optoelectronic device reproduces a
3D or 2.5D appearance that is free or substantially free of
compressions and/or extensions.
[0034] In various aspects, a method for producing an optoelectronic
device is provided. The method includes providing a substrate. The
substrate has a first state having a non-planar shape. The method
furthermore includes reshaping the substrate into a second state.
The second state has a planar or substantially planar shape. The
method furthermore includes forming at least one optoelectronic
component on the substrate. The method furthermore includes
reshaping the substrate into a third state. The third state is
identical or substantially identical to the first state.
[0035] This has the effect that the at least one optoelectronic
component can be formed on a planar or substantially planar
substrate, which simplifies the process and method conditions.
Moreover, the method has the effect that the optoelectronic
component on the substrate can be reshaped into a non-planar shape,
i.e. into a 3D or 2.5D appearance, in a simple manner. This
prevents a pressure, i.e. a mechanical loading, from acting
directly on the at least one optoelectronic component, for example
the encapsulation structure thereof.
[0036] The optoelectronic component is formed on a surface of the
substrate. That surface of the substrate on which the
optoelectronic component is formed can be a planar surface, for
example having a low roughness. A low roughness includes for
example a mean roughness in a range of approximately 0.1 nm to
approximately 50 nm. However, at the microscopic and/or macroscopic
level, the substrate and/or the surface of the substrate can
moreover be non-planar, for example have an undulation, a curvature
or a bend, for example having a convexly curved shape. Hereinafter,
the microscopic and/or macroscopic planarity of the substrate
and/or of the surface of the substrate is meant when the planar
and/or non-planar substrate and/or surface of the substrate is
described.
[0037] In the process of forming the at least one optoelectronic
component, the surface of the substrate has a planar shape. This
has the effect that the at least one optoelectronic component can
be formed on a planar or substantially planar surface of the
substrate, which simplifies the process and method conditions.
[0038] In the context of this description, the term "non-planar
shape" is used with the meaning that the shape in the surface has
at least one bend or a curvature. The non- planar surface is the
surface on which the at least one optoelectronic component is
applied or formed after the process of reshaping the non-planar
surface of the substrate into a planar or substantially planar
surface of the substrate. By way of example, the substrate in the
first state includes two coplanar surfaces having a bend or a
curvature. In the first state, the substrate can inherently have at
least one bend or one curvature. By way of example, the substrate
is formed as a film or a sheet. By way of example, the substrate
was wound up on a roll and has a curvature from this winding-up. In
this respect, the substrate is non-planar or non-level or not
flat.
[0039] The term "substrate" is used herein with the meaning that a
carrier is involved on which at least one optoelectronic component
can be formed, i.e. is deposited or applied. A molten material, for
example a molding compound, is not a substrate in this sense.
However, a substrate can be formed from the molten material, for
example by the molten material being brought to a predefined shape
and solidified.
[0040] In one development, the non-planar shape has at least one
curvature or one bend. Illustratively, the substrate thus has a
shape that leads to a 3D or 2.5D appearance of the optoelectronic
device.
[0041] In another development, the substrate includes a shape
memory material. This has the effect that the substrate is formed,
for example is embossed, in a shape that it can assume again after
a mechanical deformation, for example an elastic deformation by
means of an external stimulus.
[0042] In another development, the shape memory material includes a
metallic alloy or at least one polymer. For the case where the
shape memory material includes a metallic alloy, this has the
effect that the heat arising during operation in the optoelectronic
device is dissipated or distributed uniformly. For the case where
the shape memory material includes a polymer, what is made possible
is that the optoelectronic device can be recycled in a simple
manner.
[0043] In another development, reshaping the substrate from the
first state into the second state includes a phase transition of
the shape memory material. The phase transition is for example a
discontinuous phase transition, a martensitic phase transition or a
continuous phase transition. This has the effect that the shape
memory material, by means of the phase transition of the shape
memory material, has stable phases in the second state. This
enables a stabilization of the substrate in the second state.
[0044] In another development, in the process of providing the
substrate, the substrate is formed in a non-planar fashion, i.e.
intrinsically has a non-planar shape. Alternatively, the substrate
is formed in a planar fashion and is brought to the non-planar
shape, for example by means of a shape embossing. This enables the
shape memory material of the substrate to be embossed with a
permanent shape that is non-planar.
[0045] In another development, reshaping the substrate from the
first state into the second state includes mechanical reshaping.
The mechanical reshaping thereby brings about a mechanical
deformation, for example an elastic deformation of the substrate,
for example of the substrate including shape memory material.
[0046] In another development, reshaping the substrate from the
first state into the second state includes a fixing in the second
state by means of a releasable, mechanical connection, for example
by means of a clamping, for example with a clamp or clamping
connection. The releasable, mechanical connection is formed by
means of a connection means or a connection structure, for example
by the substrate being arranged and clamped between a holder and a
clamp. Alternatively or additionally, reshaping the substrate from
the first state into the second state includes a fixing by means of
at least one property of the shape memory material. This has the
effect that the substrate is stable and/or stabilized with a flat
or planar surface on which the at least one optoelectronic
component can be formed in a simple, stable, practical manner. This
furthermore makes it possible to form or fix the at least one
optoelectronic component on the substrate 102, wherein forming the
at least one optoelectronic component on the substrate 102 is free
of external forces on the at least one optoelectronic
component.
[0047] In one development, the releasable, mechanical connection
includes at least one clamp. The at least one clamp includes a
shape memory material. The at least one clamp including shape
memory material enables the stabilization of the substrate in the
planar or substantially planar shape.
[0048] In another development, forming the at least one
optoelectronic component on the substrate includes a lamination of
the at least one optoelectronic component on the substrate. This
brings about a cohesive bonding of the at least one optoelectronic
component to the substrate. Alternatively or additionally, forming
the at least one optoelectronic component on the substrate includes
at least forming a first electrode on the substrate, forming an
organic functional layer stack on the first electrode and forming a
second electrode on the organic functional layer stack. This brings
about a more cost-effective process of forming the plurality of
optoelectronic components including a common substrate.
[0049] In another development, reshaping the substrate from the
second state into the third state includes releasing the
releasable, mechanical connection, for example removing at least
one clamp. Alternatively or additionally, reshaping the substrate
from the second state into the third state includes a further phase
transition of the shape memory material, for example by means of a
stimulus. In this case, the substrate and/or the connection means
may include the shape memory material. This makes it possible to
reshape the optoelectronic device or the substrate of the
optoelectronic device into a non-planar, for example convexly
curved, shape, without the need for an external force, for example
a pressure, i.e. a mechanical loading on the optoelectronic
component, for example on the active area of the at least one
optoelectronic component or the encapsulation layer thereof.
[0050] In another development, reshaping the substrate from the
second state into the third state includes reshaping the at least
one clamp including shape memory material, for example by means of
a stimulus. The at least one clamp including shape memory material
makes it possible to support or protect the edge region of the
optoelectronic device during the process of reshaping the substrate
into the third state. This has the effect of reducing or avoiding a
delamination of the at least one optoelectronic component from the
substrate during the process of reshaping the substrate into the
third state.
[0051] In another development, the method after forming the at
least one optoelectronic component on the substrate furthermore
includes forming an encapsulation layer. Forming the encapsulation
layer and reshaping the substrate into the third state can be
carried out simultaneously. Forming the encapsulation layer after
forming the at least one optoelectronic component on the substrate
and before reshaping the substrate into the third state can bring
about a stabilized process of reshaping the substrate into the
third state. A delamination of the at least one optoelectronic
component from the substrate is reduced or avoided as a result.
[0052] In a further aspect, a method for producing an
optoelectronic device is provided. The method includes providing a
first substrate and a second substrate. The first substrate and the
second substrate are provided in each case in a non-planar shape,
i.e. are formed intrinsically in a non-planar fashion.
Alternatively, the first substrate and the second substrate are
brought from a planar shape to the non-planar shape, for example by
means of a shape embossing of the planar shape.
[0053] The method furthermore includes reshaping the first
substrate and the second substrate in each case into a planar or
substantially planar shape.
[0054] The method furthermore includes forming at least one
optoelectronic component on the first substrate having the planar
shape or having the substantially planar shape or on the second
substrate having the planar shape or having the substantially
planar shape. The at least one optoelectronic component is formed,
for example arranged, in a sandwichlike manner between the first
substrate and the second substrate.
[0055] The method furthermore includes reshaping the first
substrate having the planar shape or having the substantially
planar shape and the second substrate having the planar shape or
having the substantially planar shape in each case to a non-planar
shape.
[0056] The arrangement of the at least one optoelectronic component
between a first substrate and a second substrate makes it possible,
during the process of reshaping the first substrate and the second
substrate into the non-planar shape, for example during the process
of reshaping the optoelectronic device into the convexly curved
shape, for the at least one optoelectronic component to be formed
in the neutral axis or in the region of the neutral axis. This
enables an optoelectronic device having a 3D or 2.5D appearance,
wherein at least one optoelectronic component is free or
substantially free of compression or extension. The mechanical
loading of the optoelectronic component is reduced as a result.
[0057] In one development, an optoelectronic device is provided.
The optoelectronic device includes a first substrate having a first
non-planar shape, a second substrate having a second non-planar
shape and at least one optoelectronic component. The optoelectronic
component is arranged in a sandwichlike manner between the first
substrate and the second substrate. The first substrate includes a
first shape memory material and the second substrate includes a
second shape memory material. The first shape memory material can
be identical to or different from the second shape memory material.
The second non-planar shape is identical or substantially identical
to the first non-planar shape. The first substrate is arranged in a
coplanar or substantially coplanar fashion with respect to the
second substrate.
[0058] This makes it possible that the at least one optoelectronic
component can be arranged in the neutral axis or in the region of
the neutral axis. This brings about an optoelectronic device having
a 3D or 2.5D appearance, wherein the mechanical loading of the
optoelectronic component by compression or extension is reduced or
avoided.
[0059] In various developments, the optoelectronic device and its
component parts, for example the at least one optoelectronic
component and the first and second substrates, have the same
features as the optoelectronic device implemented in the method,
and vice versa.
[0060] FIG. 1 shows a schematic sectional illustration concerning a
method for producing an optoelectronic device in accordance with
various aspects.
[0061] The method for producing an optoelectronic device includes
providing 120 a substrate 102, reshaping 140 the substrate 102 into
a second state, forming 160 at least one optoelectronic component
104 on the substrate 102, and reshaping 180 the substrate 102 into
a third state.
[0062] In the process of providing 120 the substrate 102, the
substrate 102 has a first state. The first state has a non-planar
shape. In other words: the substrate has a non-planar shape in the
first state. For the case where the substrate includes a shape
memory material, the first state constitutes the state of the
substrate in which the substrate has the permanent shape.
[0063] The second state has a planar or substantially planar shape.
In other words: the substrate has a planar or substantially planar
shape in the second state. In this case, the planar or
substantially planar shape relates substantially to that surface of
the substrate on which the optoelectronic component is formed. For
the case where the substrate includes a shape memory material, the
second state constitutes the state of the substrate in which the
substrate has the temporary shape.
[0064] The third state is identical or substantially identical to
the first state. In other words: in the third state, the substrate
has a non-planar shape which is identical or substantially
identical, for example similar, to the non-planar shape in the
first state, i.e. is derivable from this shape, or corresponds
thereto. For the case where the substrate includes a shape memory
material, the third state constitutes the state of the substrate in
which the substrate, after reshaping of the substrate having the
temporary shape, has the permanent shape or a shape identical to
the permanent shape.
[0065] The method for producing an optoelectronic device makes it
possible to form the at least one optoelectronic component on a
substrate shaped in a planar or substantially planar fashion. After
the process of forming the at least one optoelectronic component,
the optoelectronic device is reshaped into the third state in such
a way that the optoelectronic device has a non-planar shape, for
example a convexly curved shape. This makes it possible to produce
an optoelectronic device which has a 3D or 2.5D appearance. By
means of reshaping the substrate with the at least one
optoelectronic component, an optoelectronic device having a
non-planar shape is provided in a simple manner. This prevents a
pressure, i.e. a mechanical loading, from acting directly on the at
least one optoelectronic component, for example the encapsulation
structure thereof. As a result, it is possible to reduce or avoid
previously occurring defects in the at least one optoelectronic
component during the process of forming the latter on the
substrate.
[0066] FIG. 1A illustrates the process of providing 120 the
substrate 102 in the method for producing the optoelectronic device
101 in accordance with various aspects.
[0067] In various aspects, the non-planar shape has at least one
curvature and/or one bend. In the context of this description, a
curvature may include or be a flexure, a curve, an inflection, or
the like. In the context of this description, a bend may include or
be a fold or the like. A radius of curvature that quantifies the
degree of (non-) planarity is defined for a curvature. No radius of
curvature is defined for a bend since the bend involves a
discontinuity of the course of the shape.
[0068] In other words: in the process of providing 120 the
substrate and/or in the process of reshaping 180 the substrate from
the second state into the third state, the substrate 102 is formed
in such a way that it has a curvature and/or a bend. This makes it
possible to form an optoelectronic device having a 3D or 2.5D
appearance, without the optoelectronic component being damaged by
the reshaping process in this case.
[0069] The substrate 102 is for example a film or a holder for the
optoelectronic device 101. Alternatively or additionally, the
substrate 102 is for example the substrate of the at least one
optoelectronic component 104, for example the common substrate for
a plurality of optoelectronic components of the optoelectronic
device 101.
[0070] The substrate 102 is for example an elastic substrate, a
pseudoelastic substrate, a viscoelastic substrate and/or a
thermoelastic substrate.
[0071] In various aspects, the substrate 102 includes or is formed
from a shape memory material. The shape memory material is for
example a one-way shape memory material or a multi-way shape memory
material, for example a two-way shape memory material or a
three-way shape memory material.
[0072] This has the effect that the substrate is embossed with a
shape that it can assume again after a mechanical deformation, for
example an elastic deformation, by means of an external stimulus
suitable for the shape memory material. This enables for example a
simpler shipping of the optoelectronic device as a planar, thin
body which can be brought to the later 3D or 2.5D structure in a
very simple manner by the customer after purchase. Alternatively or
additionally, it enables a self-repair of the optoelectronic
device. By way of example, after manufacture of the optoelectronic
device has been completed, an inadvertent mechanically induced
deformation of the substrate may occur, for example an accidental
mechanically induced deformation. The substrate composed of shape
memory material can correct the inadvertent mechanically induced
deformation by means of the external stimulus suitable for the
shape memory material. Correcting the inadvertent mechanically
induced deformation is understood to mean that the substrate
reshaped by the inadvertent mechanically induced deformation
assumes again the shape embossed in the shape memory material by
means of the external stimulus.
[0073] In various aspects, the shape memory material includes or is
formed from a metallic alloy. The metallic alloy is for example a
nickel-, copper-, iron-, copper-zinc-nickel-,
copper-aluminum-nickel-, silver-nickel-, gold-cadmium-based alloy
or combinations thereof. By way of example, the metallic alloy is a
nickel-titanium- or a nickel-titanium-copper-based alloy. By way of
example, the metallic alloy is a mixture of nickel and titanium in
a ratio of 1:1 with regard to the atomic number (also referred to
as Nitinol).
[0074] In various aspects, the shape memory material includes or is
formed from at least one polymer, for example two polymers or three
polymers. The at least one polymer includes for example a copolymer
and/or a combination of at least two polymer materials. The at
least one polymer includes for example an elastic polymer material,
a viscoelastic polymer material, a pseudoplastic polymer material,
a thermoplastic polymer material and/or a thermosetting polymer
material. The shape memory polymer is for example a physically
crosslinked polymer or a chemically crosslinked polymer. Examples
of polymers or polymer materials are polyurethane (PUR), polyamide
(PA), for example nylon 6 or nylon 66, polyester, for example
polyethylene terephthalate (PET), polypropylene terephthalate
(PPT), polycarbonate (PC), acrylic butadiene styrene (ABS), vinyl
polymer or polyolefin, for example polystyrene (PS),
poly(1,4-butadiene), copolymer of polystyrene with
poly(1,4-butadiene), polyvinyl chloride (PVC), polyvinylpyrrolidone
(PVP), polyacrylonitrile (PAN), polyethylene (PE), polypropylene
(PP), polyethylene oxide (PEO), polyether,
poly(2-methyl-2-oxazoline), polytetrahydrofuran, copolymer of
poly(2-methyl-2-oxazoline) with polytetrahydrofuran, polyethylene
oxide (PEO), copolymer of polyethylene terephthalate (PET) with
polyethylene oxide (PEO), polynorbornene, polycyanate, maleic
anhydride, etc.
[0075] Optionally, the shape memory material including polymer may
include additives, for example crosslinkers, reactive oligomers,
reactive fillers and/or further additives, for example glycerol,
trimethylolpropane, dimethyl 5-isophthalate, anti-oxidizing agents,
UV absorbers, fillers, reinforcement materials, colorants,
processing aids.
[0076] For the case where the shape memory material includes a
metallic alloy, the heat arising during operation in the
optoelectronic device is dissipated or distributed uniformly. For
the case where the shape memory material includes a polymer, what
is made possible is that the optoelectronic device can be recycled
more simply.
[0077] Providing 120 the substrate 102 includes for example forming
the substrate 102 in a non-planar fashion. By way of example, the
substrate 102 is provided in such a way that it has the non-planar
shape. In other words: the substrate 102 is formed in a state
having a non-planar shape. Alternatively or additionally, providing
120 the substrate 102 includes firstly providing the substrate 102
having a planar or substantially planar shape followed by bringing
or reshaping the substrate 102 into a state having a non-planar
shape. In other words: the substrate 102 is formed in a planar
fashion and is brought to the non-planar shape. By way of example,
changing the state of the substrate 102 from the planar shape to
the non-planar shape is carried out by means of a shape embossing.
In other words: the planar substrate 102 can be shape-embossed in
such a way that it has a non-planar shape. Furthermore, the shape
embossing can proceed in a convexly curved fashion. Alternatively
or additionally, the shape embossing can have a bend. Furthermore,
the shape embossing is carried out for example at a temperature in
a range of approximately 300.degree. C. to approximately
600.degree. C., for example of approximately 400.degree. C. to
approximately 500.degree. C.
[0078] This has the effect that the substrate is embossed with a
non-planar shape corresponding to the first state. This makes it
possible that the substrate having the embossed non-planar shape
can be reshaped to a different shape by means of a mechanical
stress and, after relief of the mechanical stress, the substrate
can be reshaped to a shape that is identical or substantially
identical to the non-planar shape corresponding to the first
state.
[0079] For the case where the substrate 102 includes a shape memory
material, providing 120 the substrate 102 includes embossing the
shape memory material with a permanent shape, for example reshaping
the shape memory material to a shape above the transition value of
the shape memory material, for example the transition temperature
of the shape memory material, and rapidly cooling the shape memory
material. The substrate 102 is embossed with the permanent shape as
a result. The permanent shape of the substrate is a non-planar
shape, for example a convexly curved shape. In this case, the
substrate including shape memory material has the first state, i.e.
a non-planar shape, for example a convexly curved shape.
[0080] Embossing the shape memory material of the substrate with
the permanent shape makes it possible for the substrate to be
shaped back into the first state and/or to the permanent shape
after reshaping of the substrate into a different state and/or into
a temporary shape, for example by means of a mechanical
deformation, for example an elastic deformation, by means of a
stimulus, for example a change of the value of a physical variable
above the transition value of the shape memory material, for
example the transition temperature of the shape memory
material.
[0081] FIG. 1B illustrates a precursor of the optoelectronic device
101 in the method for producing the optoelectronic device 101 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The substrate and the shape memory material can be formed for
example in accordance with one of the aspects described above.
[0082] As is illustrated in FIG. 1B, the substrate 102 has a planar
or substantially planar shape. The planar or substantially planar
shape of the substrate constitutes the second state of the
substrate 102.
[0083] The substrate 102 may include a shape memory material.
[0084] In various aspects, reshaping 140 the substrate 102
including shape memory material from the first state into the
second state includes a phase transition or a phase transformation
of the shape memory material.
[0085] This has the effect that the shape memory material, by means
of the phase transition of the shape memory material, has stable
phases in the second state. This enables a stabilization of the
substrate in the second state.
[0086] If the shape memory material includes or is formed from a
metallic alloy, the metallic alloy has a first crystal structure or
phase at least in the first state and a second crystal structure or
phase in the second state. The at least first crystal structure and
second crystal structure are different. The first crystal structure
is the crystal structure of the metallic alloy which is embossed in
the metallic alloy with shape memory material. The first crystal
structure thus constitutes the permanent shape of the metallic
alloy. The second crystal structure is a structure that is obtained
for example by means of a mechanical deformation, for example an
elastic deformation of the metallic alloy. The second crystal
structure thus constitutes the temporary shape of the metallic
alloy. The metallic alloy can transform from the first crystal
structure to the second crystal structure, and vice versa. By way
of example, the metallic alloy transforms from the first crystal
structure to the second crystal structure by means of a mechanical
deformation, for example an elastic deformation, for example by
means of smoothing or flattening of the substrate. By way of
example, the metallic alloy transforms from the second crystal
structure to the first crystal structure by means of an initiating
stimulus for the metallic alloy, for example a change in the value
of a physical variable above the transition value of the metallic
alloy, for example above the transition temperature of the metallic
alloy. The first crystal structure has one or more lattice
parameters different from the lattice parameter(s) of the second
crystal structure. As a result, the substrate can have a different
shape in the first crystal structure compared with in the second
crystal structure. A lattice parameter is a lattice constant, for
example, whereby different lattice shapes can be formed in the
crystal shapes.
[0087] If the shape memory material includes or is formed from a
polymer or a polymer mixture, the shape memory material has at
least a first molecular network structure phase and a second
molecular network structure phase. The first molecular network
structure phase is the molecular network structure phase of the
polymer or of the polymer mixture which is embossed in the polymer
or in the polymer mixture with shape memory material. The first
molecular network structure phase thus constitutes the permanent
shape of the polymer or of the polymer mixture. The second
molecular network structure phase is a structure that is obtained
for example by means of a mechanical deformation, for example an
elastic deformation of the polymer or of the polymer mixture. The
second molecular network structure phase thus constitutes the
temporary shape of the polymer or of the polymer mixture. The at
least one polymer can transform from the first molecular network
structure phase to the second molecular network structure phase,
and vice versa. By way of example, the polymer or the polymer
mixture transforms from the molecular network structure phase to
the second molecular network structure phase by means of a
mechanical deformation, for example an elastic deformation, for
example by means of smoothing or flattening of the substrate. By
way of example, the polymer or the polymer mixture transforms from
the second molecular network structure phase to the first molecular
network structure phase by means of an initiating stimulus for the
metallic alloy, for example a change in the value of a physical
variable above the transition value of the polymer or of the
polymer mixture, for example above the transition temperature of
the polymer or of the polymer mixture.
[0088] Alternatively or additionally, reshaping 140 the substrate
102 from the first state into the second state includes mechanical
reshaping. By way of example, the mechanical reshaping includes
drawing smooth, pressing and/or rolling. Drawing smooth can be a
process of drawing the sides arranged at the outermost edge region
of the substrate 102. Rolling is rolling flat, for example. The
mechanical reshaping thereby brings about a mechanical deformation,
for example an elastic deformation of the substrate, for example of
the substrate including shape memory material.
[0089] In various aspects, reshaping 140 the substrate 102 from the
first state into the second state includes a fixing. The fixing in
the second state is carried out for example by means of a
releasable, mechanical connection, for example a clamping. The
releasable, mechanical connection includes a connection means, for
example a carrier temporarily adhesively bonded on the substrate,
or at least one clamp 112 (illustrated in FIG. 3A). Alternatively
or additionally, the clamp can be formed as follows: a first plate
and a second plate, wherein the first plate and the second plate
are formed in such a way that they can be connected together, for
example by means of screwing. The first plate can have a whole
surface area in this case. The second plate has a single large-area
cutout on the side on which the OLED is processed. Alternatively,
the second plate, on the side on which the OLED is processed, has a
plurality of cutouts through which the OLED(s) can be processed on
the substrate. Alternatively or additionally, the fixing in the
second state is carried out by means of at least one property of
the shape memory material. The property of the shape memory
material is material-specific, i.e. shape memory
material-dependent. The property of the shape memory material is
for example a structure of the at least one polymer after reshaping
into the second state. Alternatively or additionally, the property
of the shape memory material is a crosslinking of the at least one
polymer obtained after reshaping into the second state. By virtue
of the property of the shape memory material, the temporary shape
of the shape memory material is stabilized at a temperature in a
range of approximately -10.degree. C. to approximately 100.degree.
C.
[0090] Reshaping the substrate to a planar shape has the effect
that the substrate is stable or stabilized with a flat surface. The
at least one optoelectronic component 104 can be formed in a
simple, stable, practical manner on the planar surface of the
substrate.
[0091] This furthermore makes it possible to form or fix the at
least one optoelectronic component 104 on the substrate 102,
without the optoelectronic component 104 or the active area thereof
being damaged in the process by means of a pressure, i.e. a
mechanical loading on the optoelectronic component 104.
[0092] FIG. 1C illustrates a precursor of the optoelectronic device
101 in the method for producing the optoelectronic device 101 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The substrate and the shape memory material can be formed for
example in accordance with one of the aspects described above.
[0093] As is illustrated in FIG. 1C, at least one optoelectronic
component 104 is formed on the planar or substantially planar
substrate 102, for example a plurality of optoelectronic
components. The at least one optoelectronic component is described
in greater detail below (see FIG. 2, for example).
[0094] Forming the at least one optoelectronic component 104 on the
planar substrate makes it possible for a pressure, i.e. a
mechanical loading, to be applied on the optoelectronic component
104, for example on the active area of the optoelectronic component
104 or the encapsulation layer thereof. This has the effect of
reducing or avoiding the previously occurring defects during the
process of forming the at least one optoelectronic component
104.
[0095] In various aspects, forming 160 at least one optoelectronic
component 104 on the substrate 102 includes a lamination of the at
least one optoelectronic component 104 on the substrate 102. By way
of example, the optoelectronic component 104 is fixed on the
substrate 102 by means of heat, pressure, welding and/or adhesive
bonding. The optoelectronic component is for example a finished
optoelectronic component, for example encapsulated, or an
optoelectronic component formed without an encapsulation layer.
[0096] Alternatively or additionally, the optoelectronic component
104 can be formed directly on the substrate 102, for example can be
deposited layer by layer in physical contact with the substrate
102. Alternatively, the optoelectronic component 104 is formed for
example above the substrate 102.
[0097] In other words:
[0098] Alternatively or additionally, forming 160 at least one
optoelectronic component 104 on the substrate 102 includes at least
forming the first electrode on the substrate 102, forming the
organic functional layer stack on the first electrode, and forming
the second electrode on the organic functional layer stack. In
other words: the optoelectronic component 104 is formed or applied
step by step or sequentially on the substrate 102. Alternatively or
additionally, forming 160 at least one optoelectronic component 104
on the substrate 102 includes depositing a conductive layer on the
substrate 102, said conductive layer including the first electrode
of the optoelectronic component. This enables the plurality of
optoelectronic components which include a common substrate to be
formed more cost-effectively.
[0099] In various aspects, the method 100 for producing the
optoelectronic device 101, after forming 160 the at least one
optoelectronic component 104 on the substrate 102, furthermore
includes forming 170 an encapsulation layer. By way of example,
forming 170 the encapsulation layer and reshaping 180 the substrate
102 in the third state are carried out simultaneously. This enables
stabilized reshaping of the optoelectronic device and a better,
supported encapsulation effect.
[0100] FIG. 1D illustrates the optoelectronic device 101 in the
method for producing the optoelectronic device 101 in accordance
with various aspects. The optoelectronic device can correspond to
one of the optoelectronic devices described above. The substrate,
the shape memory material and the at least one optoelectronic
component can be formed for example in accordance with one of the
aspects described above.
[0101] As is illustrated in FIG. 1D, the optoelectronic device 101
has a non-planar shape. In this case, the optoelectronic device 101
includes the substrate 102 and the at least one optoelectronic
component 104 formed on the substrate 102. By way of example, a
plurality of optoelectronic components 104 can be formed on a
common substrate 102.
[0102] The optoelectronic device can be formed for example in such
a way that it is flexible. Alternatively, the optoelectronic device
can be formed for example in such a way that it is rigid or
inflexible. Furthermore, the optoelectronic device is formed for
example in such a way that it is transparent. Alternatively, the
optoelectronic device can be formed for example in such a way that
it is translucent or opaque.
[0103] The non-planar shape of the third state is the shape that is
identical or substantially identical to the shape that the
substrate 102 has in the first state. In other words: the substrate
is reshaped into the third state in such a way that it has the same
or substantially the same shape as in the first state.
[0104] In various aspects, reshaping 180 the substrate 102 from the
second state into the third state includes releasing the
releasable, mechanical connection, for example relieving the
mechanical stress or clamping. By way of example, releasing the
releasable, mechanical connection includes removing the at least
one clamp 112 from the substrate 102.
[0105] Alternatively or additionally, reshaping 180 the substrate
102 from the second state into the third state includes a further
phase transition of the shape memory material. The phase transition
or the phase transformation can constitute or be the opposite phase
transition or the opposite phase transformation of the shape memory
material of the substrate 102 with respect to the phase transition
that reshapes the substrate 102 from the first state to the second
state. The phase transition or the phase transformation is effected
for example by means of a stimulus. The stimulus is for example an
alteration of the value of a physical parameter or of a physical
variable, for example the temperature, the wavelength of the UV
light, the strength of the magnetic field or the mechanical stress,
above a specifically defined value that initiates the phase
transition or the phase transformation.
[0106] This has the effect that the substrate including shape
memory material is reshaped from the temporary shape to a shape
that is identical or substantially identical to the permanent
shape. This enables the substrate or the optoelectronic device to
be reshaped from the planar or substantially planar shape to the
non-planar shape. The non-planar shape has a bend or a curvature.
By way of example, the non-planar shape is a convexly curved shape.
This makes it possible to obtain an optoelectronic device which
reproduces a 3D or 2.5D appearance.
[0107] This furthermore enables the optoelectronic device or the
substrate of the optoelectronic device to be reshaped into a
non-planar or convexly curved shape, without a need for an external
force, for example a pressure, i.e. a mechanical loading, on the
active area of the at least one optoelectronic component.
[0108] FIG. 2 illustrates a schematic cross-sectional view of an
optoelectronic component in accordance with various aspects. The
optoelectronic component 1 can substantially correspond to the
optoelectronic component 104 in accordance with the aspects
explained in FIG. 1.
[0109] The optoelectronic component 1 is formed for example in such
a way that it is a mechanically flexible or a mechanically rigid
optoelectronic component. The optoelectronic component 1 can be
formed as transparent, translucent or non-transparent.
[0110] The optoelectronic component 1 includes a carrier 12. The
carrier 12 can be formed as translucent or transparent. The carrier
12 serves as a carrier element for electronic elements or layers,
for example light emitting elements. The carrier 12 may include or
be formed from, for example, plastic, metal, glass, quartz and/or a
semiconductor material. Furthermore, the carrier 12 may include or
be formed from a plastics film or a laminate including one or
including a plurality of plastics films. The carrier 12 can be
formed as mechanically rigid or mechanically flexible. The carrier
12 can correspond to the substrate 102 in accordance with the
aspects explained in FIG. 1. Alternatively, the carrier 12 can be
formed on the substrate 102 in accordance with the aspects
explained in FIG. 1.
[0111] An optoelectronic layer structure is formed on the carrier
12. The optoelectronic layer structure includes a first electrode
layer 14, which includes a first contact section 16, a second
contact section 18 and a first electrode 20. The carrier 12 with
the first electrode layer 14 can also be referred to as a
substrate. A first barrier layer (not illustrated), for example a
first barrier thin-film layer, can be formed between the carrier 12
and the first electrode layer 14.
[0112] In various aspects, the carrier 12 can correspond to the
substrate 102 described. Alternatively, the carrier 12 can be
fixed, for example adhesively bonded, on the substrate 102.
[0113] The first electrode 20 is electrically insulated from the
first contact section 16 by means of an electrical insulation
barrier 21. The second contact section 18 is electrically coupled
to the first electrode 20 of the optoelectronic layer structure.
The first electrode 20 can be formed as an anode or as a cathode.
The first electrode 20 can be formed as translucent or transparent.
The first electrode 20 includes an electrically conductive
material, for example metal and/or a transparent conductive oxide
(TCO) or a layer stack of a plurality of layers including metals or
TCOs. The first electrode 20 may include for example a layer stack
of a combination of a layer of a metal on a layer of a TCO, or vice
versa. One example is a silver layer applied on an indium tin oxide
layer (ITO) (Ag on ITO) or ITO-Ag-ITO multilayers. The first
electrode 20 may include as an alternative or in addition to the
materials mentioned: networks composed of metallic nanowires and
nanoparticles, for example composed of Ag, networks composed of
carbon nanotubes, graphene particles and graphene layers and/or
networks composed of semiconducting nanowires.
[0114] An optically functional layer structure, for example an
organic functional layer structure 22, of the optoelectronic layer
structure is formed above the first electrode 20. The organic
functional layer structure 22 may include for example one, two or
more sublayers. By way of example, the organic functional layer
structure 22 may include a hole injection layer, a hole transport
layer, an emitter layer, an electron transport layer and/or an
electron injection layer. The hole injection layer serves for
reducing the bandgap between first electrode and hole transport
layer. In the case of the hole transport layer, the hole
conductivity is greater than the electron conductivity. The hole
transport layer serves for transporting the holes. In the case of
the electron transport layer, the electron conductivity is greater
than the hole conductivity. The electron transport layer serves for
transporting the electrons. The electron injection layer serves for
reducing the bandgap between second electrode and electron
transport layer. Furthermore, the organic functional layer
structure 22 may include one, two or more functional layer
structure units each including the abovementioned sublayers and/or
further intermediate layers.
[0115] A second electrode 23 of the optoelectronic layer structure
is formed above the organic functional layer structure 22, which
second electrode is electrically coupled to the first contact
section 16. The second electrode 23 can be formed in accordance
with one of the configurations of the first electrode 20, wherein
the first electrode 20 and the second electrode 23 can be formed
identically or differently. The first electrode 20 serves for
example as an anode or a cathode of the optoelectronic layer
structure. The second electrode 23, in a corresponding manner to
the first electrode, serves as a cathode or an anode of the
optoelectronic layer structure.
[0116] The optoelectronic layer structure is an electrically and/or
optically active region. The active region is for example that
region of the optoelectronic component 10 in which electric current
for the operation of the optoelectronic component 10 flows and/or
in which electromagnetic radiation is generated or absorbed. A
getter structure (not illustrated) can be arranged on or above the
active region. The getter layer can be formed as translucent,
transparent or opaque. The getter layer may include or be formed
from a material which absorbs and binds substances that are harmful
to the active region.
[0117] An encapsulation layer 24 of the optoelectronic layer
structure is formed above the second electrode 23 and partly above
the first contact section 16 and partly above the second contact
section 18, said encapsulation layer encapsulating the
optoelectronic layer structure. The encapsulation layer 24 can be
formed as a second barrier layer, for example as a second barrier
thin-film layer. The encapsulation layer 24 can also be referred to
as thin-film encapsulation. The encapsulation layer 24 forms a
barrier with respect to chemical contaminants and/or atmospheric
substances, in particular with respect to water (moisture) and
oxygen. The encapsulation layer 24 can be formed as a single layer,
a layer stack or a layer structure. The encapsulation layer 24 may
include or be formed from: aluminum oxide, zinc oxide, zirconium
oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum
oxide, silicon oxide, silicon nitride, silicon oxynitride, indium
tin oxide, indium zinc oxide, aluminum-doped zinc oxide,
poly(p-phenyleneterephthalamide), nylon 66, and mixtures and alloys
thereof. If appropriate, the first barrier layer can be formed on
the carrier 12 in a corresponding manner to a configuration of the
encapsulation layer 24.
[0118] In the encapsulation layer 24, a first cutout of the
encapsulation layer 24 is formed above the first contact section 16
and a second cutout of the encapsulation layer 24 is formed above
the second contact section 18. A first contact region 32 is exposed
in the first cutout of the encapsulation layer 24 and a second
contact region 34 is exposed in the second cutout of the
encapsulation layer 24. The first contact region 32 serves for
electrically contacting the first contact section 16 and the second
contact region 34 serves for electrically contacting the second
contact section 18.
[0119] In various aspects, the encapsulation layer is formed after
the process of forming or applying the at least one optoelectronic
component on or above the second electrode of the at least one
optoelectronic component.
[0120] Forming the encapsulation layer between forming the at least
one optoelectronic component on the substrate and reshaping the
substrate into the third state can bring about stabilizing
reshaping of the substrate into the third state. A delamination of
the at least one optoelectronic component from the substrate is
reduced or avoided as a result.
[0121] An adhesion medium layer 36 is formed above the
encapsulation layer 24. The adhesion medium layer 36 includes for
example an adhesion medium, for example an adhesive, for example a
lamination adhesive, a lacquer and/or a resin. The adhesion medium
layer 36 may include for example particles which scatter
electromagnetic radiation, for example light scattering
particles.
[0122] A covering body 38 is formed above the adhesion medium layer
36. The adhesion medium layer 36 serves for securing the covering
body 38 on the encapsulation layer 24. The covering body 38
includes for example plastic, glass and/or metal. By way of
example, the covering body 38 can be formed substantially from
glass and include a thin metal layer, for example a metal film,
and/or a graphite layer, for example a graphite laminate, on the
glass body. The covering body 38 serves for protecting the
conventional optoelectronic component 1, for example against
mechanical force influences from outside. Furthermore, the covering
body 38 can serve for distributing and/or dissipating heat
generated in the conventional optoelectronic component 1. By way of
example, the glass of the covering body 38 can serve as protection
against external influences and the metal layer of the covering
body 38 can serve for distributing and/or dissipating the heat that
arises during the operation of the conventional optoelectronic
component 1.
[0123] In various aspects, the covering body 38 can correspond to
the substrate 102 described. Alternatively, the covering body 38
can be fixed, for example adhesively bonded, on the substrate
102.
[0124] FIG. 3 illustrates a schematic sectional illustration
concerning a method for producing an optoelectronic device 301 in
accordance with various aspects.
[0125] FIG. 3A shows a precursor of the optoelectronic device 301
in the method for producing the optoelectronic device 301 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The substrate, the shape memory material and the at least one
optoelectronic component can be formed for example in accordance
with one of the aspects described in FIG. 1A to FIG. 1D and FIG.
2.
[0126] As is illustrated in FIG. 3a, the substrate 108 and the at
least one optoelectronic component 104 formed thereon are
stabilized by means of two clamps 112 at the outermost edge region
at the planar or substantially planar substrate with the at least
one optoelectronic component.
[0127] The substrate 108 is held or stabilized for example by means
of the at least one clamp 112, for example two clamps, before the
process of forming the at least one optoelectronic component 104 in
the planar or in the substantially planar shape. In this case,
after the process of forming the at least one optoelectronic
component 104, the edge region of the substrate 108 that is covered
by the clamps 112 remains free of optoelectronic components (not
illustrated). This enables a stabilization--produced by mechanical
clamping--of the substrate 108 in the planar or in the
substantially planar shape. Alternatively or additionally, the
substrate 108 with the at least one optoelectronic component formed
thereon is provided with the at least one clamp 112, for example
two clamps, in the outermost edge region of the substrate 108 with
the at least one optoelectronic component formed thereon
(illustrated in FIG. 3A). This enables a stabilization of the edge
region of the substrate 108 with the at least one optoelectronic
component formed thereon during the process of reshaping the
substrate 108 into the third state or into a non-planar, for
example convexly curved, shape. This has the effect that the
reshaping can be carried out in a manner free of delamination or
with a reduced delamination of the at least one optoelectronic
component from the substrate.
[0128] The substrate 108 is for example an elastic substrate, a
pseudoelastic substrate, a viscoelastic substrate and/or a
thermoelastic substrate.
[0129] In various aspects, the substrate 108 is free of shape
memory material. Alternatively, the substrate 108 includes or is
formed from a shape memory material. Alternatively or additionally,
the substrate 108 includes a shape memory material that is arranged
in the outermost edge region of the substrate.
[0130] In various aspects, the at least one clamp 112 is free of
shape memory material. Alternatively, the at least one clamp 112
includes or is formed from a shape memory material.
[0131] FIG. 3B illustrates the optoelectronic device 301 in the
method for producing the optoelectronic device 301 in accordance
with various aspects. The optoelectronic device can correspond to
one of the optoelectronic devices described above. The substrate,
the shape memory material and the at least one optoelectronic
component can be formed for example in accordance with one of the
aspects described above.
[0132] As is illustrated in FIG. 3B, the optoelectronic device 301
includes the substrate 108, the at least one optoelectronic
component 104, for example a plurality of optoelectronic
components. Furthermore, a clamp 112 is illustrated in the detailed
view. The clamp 112 is arranged at the edge region of the
substrate. The optoelectronic device 301 has a non-planar or a
convexly curved shape.
[0133] In various aspects, reshaping the substrate 108 including
shape memory material into the third state is carried out, for
example by means of removing the at least one clamp 112 from the
substrate 108 and/or a stimulus. Alternatively or additionally,
reshaping 380 the substrate 108 including shape memory material
into the third state is carried out by means of removing the at
least one clamp 112 from the substrate with the at least one
optoelectronic component formed thereon and a stimulus.
Alternatively or additionally, reshaping 380 the substrate 108
without shape memory material into the third state includes
reshaping the at least one clamp 112. Alternatively or
additionally, reshaping 380 the substrate 108 including shape
memory material into the third state includes reshaping the at
least one clamp 112 in a manner initiated by means of a stimulus
and reshaping the substrate 108 in a manner initiated by means of a
stimulus. In this case, the at least one clamp 112 includes or is
formed from a shape memory material. The stimulus is for example an
alteration of the value of a physical parameter or of a physical
variable, for example the temperature, the wavelength of the UV
light, the strength of the magnetic field or the mechanical stress,
above a specifically defined value that initiates the phase
transition or the phase transformation.
[0134] The at least one clamp including shape memory material makes
it possible to support or stabilize the edge region of the
optoelectronic device during the process of reshaping the substrate
into the third state. This has the effect that a delamination of
the at least one optoelectronic component from the substrate during
the process of reshaping the substrate into the third state is
reduced or decreased.
[0135] In one aspect, the method for producing an optoelectronic
device includes: [0136] providing a substrate including shape
memory material, wherein the shape memory material is embossed with
a permanent shape that is non-planar, [0137] reshaping the
substrate into a planar or substantially planar shape by means of
rolling flat the substrate, [0138] applying at least one
optoelectronic component on the planar or substantially planar
substrate, and [0139] reshaping the substrate by means of a
stimulus into a shape that is identical or substantially identical
to the permanent shape of the shape memory material.
[0140] In one aspect, the method for producing an optoelectronic
device includes: [0141] providing a substrate including shape
memory material, wherein the shape memory material is embossed with
a permanent shape that is non-planar, [0142] reshaping the
substrate into a planar or substantially planar shape by means of a
clamping, for example by means of a releasable, mechanical
connection, wherein the releasable, mechanical connection includes
at least one clamp, [0143] applying at least one optoelectronic
component on the planar or substantially planar substrate, and
[0144] reshaping the substrate by means of a stimulus and releasing
the clamping into a shape that is identical or substantially
identical to the permanent shape of the shape memory material.
[0145] In one aspect, the method for producing an optoelectronic
device includes: [0146] providing a substrate including shape
memory material, wherein the shape memory material is embossed with
a permanent shape that is non-planar, [0147] reshaping the
non-planar substrate into a planar or substantially planar shape by
means of rolling flat, [0148] applying at least one optoelectronic
component on the planar or substantially planar substrate, [0149]
applying at least one elastic clamp, for example two clamps, at the
edge region of the optoelectronic substrate with the at least one
optoelectronic component, [0150] reshaping the substrate of the
optoelectronic device by means of a stimulus into a shape that is
identical or substantially identical to the permanent shape of the
shape memory material, and [0151] removing the at least one
clamp.
[0152] In one aspect, the method for producing an optoelectronic
device includes: [0153] providing a substrate including shape
memory material, wherein the shape memory material is embossed with
a permanent shape that is non-planar, [0154] reshaping the
non-planar substrate into a planar or substantially planar shape by
means of rolling flat, [0155] applying at least one optoelectronic
component on the planar or substantially planar substrate, [0156]
applying at least one clamp, for example two clamps, at the edge
region of the optoelectronic device, wherein the at least one clamp
includes a different shape memory material, [0157] reshaping the
substrate of the optoelectronic device by means of a stimulus into
a shape that is identical or substantially identical to the
permanent shape of the shape memory material, and simultaneously
reshaping the at least one clamp by means of a stimulus, and [0158]
removing the at least one clamp.
[0159] In one aspect, the method for producing an optoelectronic
device includes: [0160] providing an elastic substrate having a
first non-planar shape, [0161] reshaping the non-planar substrate
into a planar or substantially planar shape by means of at least
one clamp, wherein the at least one clamp includes a shape memory
material that is embossed with a shape in such a way that the at
least one clamp reshapes the optoelectronic device by means of a
stimulus in such a way that the optoelectronic device has a
non-planar shape, [0162] applying at least one optoelectronic
component on the planar or substantially planar substrate, and
[0163] reshaping the at least one clamp by means of a stimulus in
such a way that the optoelectronic device has a second non-planar
shape, which is identical or substantially identical to the first
non-planar shape.
[0164] FIG. 4 shows a schematic sectional illustration concerning a
method for producing an optoelectronic device in accordance with
various aspects.
[0165] The method 400 for producing the optoelectronic device 401
includes providing 420 a first substrate 102 and a second substrate
106. The first substrate 102 and the second substrate 106 have a
non-planar shape in each case. The non-planar shape of the first
substrate 102 is identical or substantially identical to the
non-planar shape of the second substrate 106. In the process of
providing 420 the first substrate 102 and the second substrate 106,
the first substrate 102 and the second substrate 106 are in each
case formed in the non-planar shape or brought to the non-planar
shape, for example by means of a shape embossing.
[0166] The method 400 furthermore includes reshaping 440 the first
substrate 102 and the second substrate 106 in each case into a
planar or substantially planar shape. Reshaping 440 the first
substrate 102 and the second substrate 106 from the first state
into the second state includes mechanical reshaping, for example.
By way of example, the mechanical reshaping includes drawing smooth
and/or rolling. Drawing smooth can be a process of drawing the
sides arranged at the outermost edge region of the first substrate
102 and of the second substrate 106. Rolling is rolling flat, for
example.
[0167] The method 400 furthermore includes forming 460 at least one
optoelectronic component 104 on the first substrate 102 having the
planar shape or having the substantially planar shape or on the
second substrate 106 having the planar shape or having the
substantially planar shape. The at least one optoelectronic
component is formed on a planar or planarized surface of the first
or respectively second substrate. The at least one optoelectronic
component 104 is formed in a sandwichlike manner between the first
substrate 102 and the second substrate 106.
[0168] The method additionally includes reshaping 480 the first
substrate 102 having the planar or substantially planar shape into
a non-planar shape and reshaping 480 the second substrate 106
having the planar or substantially planar shape into a non-planar
shape. The non-planar shape of the first substrate is identical or
substantially identical to the non-planar shape of the second
substrate. In this case, the non-planar shape of the first
substrate and the non-planar shape of the second substrate in the
completed device can be identical or substantially identical to the
non-planar shape of the first substrate and of the second substrate
in the process for providing 420 same.
[0169] This makes it possible to form the optoelectronic component
104 on a flat or planar surface of the first or respectively second
substrate. This enables a process of forming 460 the optoelectronic
component 104, wherein no or substantially no mechanical pressure,
i.e. mechanical loading, is exerted on the optoelectronic
component, for example on the active area of the optoelectronic
component or the encapsulation layer thereof. This reduces or
avoids the occurrence of damage and/or defects in the at least one
optoelectronic component during the process of forming the latter
on the substrate.
[0170] Furthermore, the arrangement of the at least one
optoelectronic component 104 between the first substrate 102 and
the second substrate 106 enables an optoelectronic device whose
neutral axis lies in or in the region of the optoelectronic
component. As a result, the at least one optoelectronic component
is free of a deformation or compression or extension during the
process of reshaping 380 the first substrate 102 and the second
substrate 106 in each case into a non-planar shape. In other words:
the method for producing the optoelectronic device 401 including
two substrates makes it possible to produce the optoelectronic
device 401 having a 3D or 2.5D appearance that is free of
alterations of the appearance that the optoelectronic device has if
it is formed in a flat fashion.
[0171] FIG. 4A shows a precursor of the optoelectronic device 401
in the method for producing the optoelectronic device 401 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The first substrate 102, the second substrate 106, the shape memory
material can be formed for example in accordance with a substrate
described in FIG. 1A to FIG. 1D, FIG. 2, FIG. 3A, FIG. 3B.
[0172] Providing 420 the first substrate 102 and the second
substrate 106 can be carried out in accordance with one of the
aspects described in FIG. 1A for providing 120 the substrate
102.
[0173] As is illustrated in FIG. 4A, the first substrate 102 and
the second substrate 106 have a non-planar shape. The non-planar
shape includes for example a bend or a curvature. By way of
example, the non-planar shape is a convexly curved shape. The
non-planar shape of the first substrate 102 can be identical or
substantially identical to the non-planar shape of the second
substrate 106.
[0174] In various aspects, the first substrate 102 and the second
substrate 106 include a shape memory material, wherein the shape
memory material can be formed for example in accordance with one of
the aspects described in FIG. 1A to FIG. 1D, FIG. 2, FIG. 3A, FIG.
3B.
[0175] In various aspects, providing 420 the first substrate 102
and the second substrate 106 includes forming the first substrate
102 and the second substrate 106 in the non-planar shape by means
of shape embossing of the shape memory material respectively
provided in the first substrate 102 and in the second substrate
106. In other words: the first substrate 102 and the second
substrate 106 are shape-embossed into the non-planar shape. Said
non-planar shape constitutes the permanent shape of the shape
memory material of the respective first and second substrates.
[0176] FIG. 4B shows a precursor of the optoelectronic device 401
in the method for producing the optoelectronic device 401 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The first substrate 102, the second substrate 106, the shape memory
material can be formed for example in accordance with one of the
aspects described in FIG. 1A to FIG. 1D, FIG. 2, FIG. 3A, FIG. 3B
and FIG. 4A.
[0177] Reshaping 440 the first substrate 102 and the second
substrate 106 into a planar shape can be carried out in accordance
with one of the aspects described in FIG. 1B for reshaping the
substrate 102 from the first state into the second state.
[0178] As is illustrated in FIG. 4B, the first substrate 102 and
the second substrate 106 have a planar or a substantially planar
shape. The planar or substantially planar shape of the first
substrate 102 and of the second substrate 106 constitutes the
temporary shape or temporary form of the shape memory material of
the respective first and second substrates. The temporary shape is
obtained by means of the process of reshaping the first substrate
102 and the second substrate 106 from the non-planar shape into the
planar or substantially planar shape. The temporary shape is the
shape reversible to the permanent shape of the shape memory
material of the respective first and second substrates.
[0179] FIG. 4C shows a precursor of the optoelectronic device 401
in the method for producing the optoelectronic device 401 in
accordance with various aspects. The optoelectronic device can
correspond to one of the optoelectronic devices described above.
The first substrate 102, the second substrate 106, the shape memory
material can be formed for example in accordance with one of the
aspects described in FIG. 1A to FIG. 1D, FIG. 2, FIG. 3A, FIG. 3B
and FIG. 4A, FIG. 4B.
[0180] Forming 360 at least one optoelectronic component 104 can be
carried out in accordance with one of the aspects described in FIG.
1C and FIG. 3A for the process of forming 160 at least one
optoelectronic component 104 on the substrate 102.
[0181] As is illustrated in FIG. 4C, at least one optoelectronic
component 104, for example a plurality of optoelectronic
components, is formed on the first substrate 102 or on the second
substrate 106 and is arranged in a sandwichlike manner between the
first substrate 102 and the second substrate 106.
[0182] This has the effect that the at least one optoelectronic
component 104 is formed or applied on the first substrate 102 or on
the second substrate 106 without a pressure that could damage the
optoelectronic component 104 being imposed on the optoelectronic
component 104 or on the active area of the optoelectronic component
104. This makes it possible, during the process of forming the at
least one optoelectronic component 104, to prevent the previously
occurring defects caused by pressure on the optoelectronic
component 104 or on the active area of the optoelectronic component
104 during the process of forming same on the substrate.
[0183] Forming the at least one optoelectronic component 104
includes for example forming or applying at least one finished
optoelectronic component on the first substrate 102 and/or on the
second substrate 16, which is formed with or without an
encapsulation layer. Forming the at least one optoelectronic
component 104 can be carried out by means of lamination.
Alternatively or additionally, the optoelectronic component 104 is
formed for example in such a way that it is in physical contact
with the first substrate 102 and/or with the second substrate 106.
Alternatively or additionally, forming the at least one
optoelectronic component 104 includes depositing a conductive layer
on the first substrate 102 and/or on the second substrate 106. The
conductive layer may include or form one of the electrodes of the
optoelectronic component. Alternatively or additionally, forming
the at least one optoelectronic component 104 includes at least
forming the first electrode on the first substrate 102 or on the
second substrate, forming the organic functional layer stack on the
first electrode and forming the second electrode on the organic
functional layer stack and applying the second substrate 106 or the
first substrate 102 on the organic functional layer stack.
[0184] The second substrate 106 is for example cohesively connected
to the at least one optoelectronic component. The cohesive
connection is effected by means of an adhesive, for example. This
makes it possible for the at least one optoelectronic component to
be subjected to less stress during the process of reshaping the
first substrate 102 and the second substrate 106.
[0185] In various aspects, the encapsulation layer can be connected
to the second substrate 106 in a force-locking manner. As a result,
the encapsulation effect of the encapsulation layer is supported
and the process of reshaping the first substrate and the second
substrate into the third state will be stabilized.
[0186] FIG. 4D illustrates the optoelectronic device 401 in the
method for producing the optoelectronic device 401 in accordance
with various aspects. The optoelectronic device can correspond to
one of the optoelectronic devices described above. The first
substrate 102, the second substrate 106, the shape memory material
can be formed for example in accordance with one of the aspects
described in FIG. 1A to FIG. 1D, FIG. 2, FIG. 3A, FIG. 3B and FIG.
4A to FIG. 4C.
[0187] Reshaping 480 the first substrate 102 and the second
substrate 104 into the non-planar shape can be carried out in
accordance with one of the aspects described in FIG. 1D and FIG. 3B
for the process of reshaping 180 the substrate 102 into the third
state.
[0188] As is illustrated in FIG. 4D the optoelectronic device 401
includes the first substrate 102 having a first non-planar shape,
the second substrate 106 having a second non-planar shape, and the
at least one optoelectronic component 104, for example a plurality
of optoelectronic components 104. The at least one optoelectronic
component 104 is arranged in a sandwichlike manner between the
first substrate 102 and the second substrate 106. The non-planar
shape of the first substrate 102 is identical or substantially
identical to the non-planar shape of the second substrate 106. The
first substrate 102 is arranged in a coplanar fashion with respect
to the second substrate 106. The first substrate 102 includes a
first shape memory material. The second substrate 102 includes a
second shape memory material. The first shape memory material can
be identical to or different from the second shape memory
material.
[0189] This has the effect that during the process of reshaping 480
the first substrate 102 and the second substrate 104 into the
non-planar shape, the at least one optoelectronic component 106
includes or is formed from neutral axes. This enables the
optoelectronic device that is produced by means of this method to
be free of compression or extension.
[0190] In accordance with a first aspect, a method for producing an
optoelectronic device may include the following processes in the
following order: [0191] providing a substrate, having a first state
having a non-planar shape, [0192] reshaping the substrate into a
second state, wherein the second state has a planar or
substantially planar shape, [0193] forming at least one
optoelectronic component on the substrate, [0194] reshaping the
substrate into a third state, [0195] wherein the third state is
identical or substantially identical to the first state.
[0196] In accordance with a second aspect, the method in accordance
with the first aspect can be configured in such a way that the
non-planar shape includes at least one curvature or one bend.
[0197] In accordance with a third aspect, the method in accordance
with the first or second aspect can be configured in such a way
that the substrate includes a shape memory material.
[0198] In accordance with a fourth aspect, the method in accordance
with the third aspect can be configured in such a way that the
shape memory material includes a metallic alloy or at least one
polymer.
[0199] In accordance with a fifth aspect, the method in accordance
with the third to fourth aspects can be configured in such a way
that reshaping the substrate from the first state into the second
state includes a phase transition of the shape memory material.
[0200] In accordance with a sixth aspect, the method in accordance
with the first to fifth aspects can be configured in such a way
that in the process of providing the substrate, the substrate is
formed in a non-planar fashion, or the substrate is formed in a
planar fashion and is brought to the non-planar shape, for example,
by means of a shape embossing.
[0201] In accordance with a seventh aspect, the method in
accordance with the first to sixth aspects can be configured in
such a way that reshaping the substrate from the first state into
the second state includes mechanical reshaping.
[0202] In accordance with an eighth aspect, the method in
accordance with the first to sixth aspects can be configured in
such a way that reshaping the substrate from the first state into
the second state includes a fixing in the second state by means of
a releasable, mechanical connection, for example, a clamping,
and/or by means of at least one property of the shape memory
material.
[0203] In accordance with a ninth aspect, the method in accordance
with the eighth aspect can be configured in such a way that the
releasable, mechanical connection includes at least one clamp,
wherein the at least one clamp includes a shape memory
material.
[0204] In accordance with a tenth aspect, the method in accordance
with the first to ninth aspects can be configured in such a way
that forming at least one optoelectronic component on the substrate
includes a lamination of the at least one optoelectronic component
on the substrate; and/or includes at least forming a first
electrode on the substrate, forming an organic functional layer
stack on the first electrode and forming a second electrode on the
organic functional layer stack.
[0205] In accordance with an eleventh aspect, the method in
accordance with the eighth to tenth aspects can be configured in
such a way that reshaping the substrate from the second state into
the third state includes releasing the releasable, mechanical
connection and/or a further phase transition of the shape memory
material, for example, by means of a stimulus.
[0206] In accordance with a twelfth aspect, the method in
accordance with the ninth to tenth aspects can be configured in
such a way that reshaping the substrate from the second state into
the third state includes reshaping the at least one clamp including
shape memory material, for example, by means of a stimulus.
[0207] In accordance with a thirteenth aspect, the method in
accordance with the first to twelfth aspects can be configured in
such a way that it furthermore includes after forming the at least
one optoelectronic component on the substrate: forming an
encapsulation layer, wherein forming the encapsulation layer and
reshaping the substrate in the third state are carried out
simultaneously.
[0208] In accordance with a fourteenth aspect, the method for
producing an optoelectronic device may include the following
processes: [0209] providing a first substrate and a second
substrate, wherein the first substrate and the second substrate are
formed in each case in a non-planar shape or are brought to the
non-planar shape, for example, by means of a shape embossing,
[0210] reshaping the first substrate and the second substrate in
each case to a planar or substantially planar shape, [0211] forming
at least one optoelectronic component on the first substrate having
the planar shape or having the substantially planar shape or on the
second substrate having the planar shape or having the
substantially planar shape, wherein the at least one optoelectronic
component is formed in a sandwichlike manner between the first
substrate and the second substrate, [0212] reshaping the first
substrate having the planar shape or having the substantially
planar shape and the second substrate having the planar shape or
having the substantially planar shape in each case to a non-planar
shape.
[0213] In accordance with a fifteenth aspect, the optoelectronic
device may include a first substrate having a first non-planar
shape, wherein the first substrate includes a first shape memory
material, a second substrate having a second non-planar shape,
wherein the second substrate includes a second shape memory
material, and at least one optoelectronic component, arranged in a
sandwichlike manner between the first substrate and the second
substrate, wherein the second non-planar shape is identical or
substantially identical to the first non-planar shape and the first
substrate is arranged in a coplanar or substantially coplanar
manner with respect to the second substrate.
[0214] The disclosure is not restricted to the aspects indicated.
By way of example, it is possible to use a plurality of different
optoelectronic components arranged alongside one another or one
above another in the form of a display. By way of example, the
method for producing the optoelectronic device may include further
steps that make it possible to produce a 3D-shaped optoelectronic
device including non-elastic bodies, for example to produce an
optoelectronic device including a cylindrical body composed of
shape memory material having rings of different sizes that allow
the "development" into the cylindrical shape only in relation to
the ring size used, for example in the lateral region.
LIST OF REFERENCE SIGNS
[0215] 100, 400 Method
[0216] 120, 140, 160, 180, 360, 380, 420, 440, 460, 480 Method
processes
[0217] 101, 301, 401 Optoelectronic device
[0218] 12, 102, 106, 108 Substrate
[0219] 1, 104 Optoelectronic component
[0220] 112 Clamp
[0221] 12 Carrier
[0222] 14 Electrode layer
[0223] 16, 18 Contact section
[0224] 20, 23 Electrode
[0225] 21 Electrical insulation barrier
[0226] 22 Layer structure
[0227] 24 Encapsulation layer
[0228] 32 Contact region
[0229] 36 Adhesion medium layer
[0230] 38 Covering body
[0231] While the disclosure has been particularly shown and
described with reference to specific aspects, it should be
understood by those skilled in the art that various changes in form
and detail may be made therein without departing from the spirit
and scope of the disclosure as defined by the appended claims. The
scope of the disclosure is thus indicated by the appended claims
and all changes which come within the meaning and range of
equivalency of the claims are therefore intended to be
embraced.
* * * * *