U.S. patent application number 16/820686 was filed with the patent office on 2020-07-09 for sensing-amplifying device.
The applicant listed for this patent is Jiangsu Advanced Memory Technology Co., Ltd. ALTO MEMORY TECHNOLOGY CORPORATION. Invention is credited to Jui-Jen WU.
Application Number | 20200219543 16/820686 |
Document ID | / |
Family ID | 65329370 |
Filed Date | 2020-07-09 |
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United States Patent
Application |
20200219543 |
Kind Code |
A1 |
WU; Jui-Jen |
July 9, 2020 |
SENSING-AMPLIFYING DEVICE
Abstract
A sensing-amplifier device includes a first input terminal, a
second input terminal, a reference unit, and a sense amplifier. The
reference unit is configured to provide a reference signal. The
switching unit is selectively coupled to the first input terminal,
the second input terminal, and a reference unit. The sense
amplifier includes two terminals. The two terminals of the sense
amplifier are coupled to the first input terminal and the second
input terminal respectively by switching of the switching unit so
as to operate in a twin memory unit mode, or one terminal of the
sense amplifier is coupled to the first input terminal or the
second input terminal and the other terminal of the sense amplifier
is coupled to the reference unit by switching of the switching unit
so as to operate in a single memory unit mode.
Inventors: |
WU; Jui-Jen; (Hsinchu
County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Jiangsu Advanced Memory Technology Co., Ltd.
ALTO MEMORY TECHNOLOGY CORPORATION |
Jiangsu
Hsinchu County |
|
CN
TW |
|
|
Family ID: |
65329370 |
Appl. No.: |
16/820686 |
Filed: |
March 16, 2020 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
16361199 |
Mar 21, 2019 |
|
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16820686 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 2207/063 20130101;
G11C 7/062 20130101; G11C 2207/002 20130101; G11C 2013/0045
20130101; G11C 13/0004 20130101; G11C 13/004 20130101; G11C 7/06
20130101; G11C 11/4091 20130101; G11C 7/12 20130101; G11C 7/08
20130101; G11C 2013/0054 20130101 |
International
Class: |
G11C 7/06 20060101
G11C007/06; G11C 11/4091 20060101 G11C011/4091 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 25, 2018 |
CN |
201811591518.1 |
Claims
1. A sensing-amplifying device, comprising: a first input terminal,
coupled to a first memory unit; a second input terminal, coupled to
a second memory unit; a reference unit, configured to provide a
reference signal; a switching unit, selectively coupled to the
first input terminal, the second input terminal, and the reference
unit; and a sense amplifier, comprising two terminals, wherein when
the sense amplifier is operated in a twin memory unit mode, the two
terminals of the sense amplifier are only coupled to the first
input terminal and the second input terminal respectively by
switching the switching unit, and when the sense amplifier is
operated in a single memory unit mode one terminal of the sense
amplifier is only coupled to the first input terminal or the second
input terminal and the other terminal of the sense amplifier is
only coupled to the reference unit by switching the switching
unit.
2. The sensing-amplifying device of claim 1, wherein the switching
unit comprises: a memory switch unit, coupling both the two
terminals of the sense amplifier to the first input terminal and
the second two terminal, otherwise, selectively coupling one of the
two terminals of the sense amplifier to the first input terminal or
the second input terminal; and a reference switch unit, coupling
the reference unit to the first input terminal or the second input
terminal.
3. The sensing-amplifying device of claim 2, wherein the two
terminals of the sense amplifier are a first terminal and a second
terminal respectively, wherein the memory switch unit comprises a
first switch, selectively coupled to the first input terminal and
the first terminal of the sense amplifier; and a second switch,
selectively coupled to the second input terminal and the second
terminal of the sense amplifier, wherein when operating in the twin
memory unit mode, the first switch is turned on to couple to the
first input terminal and the first terminal of the sense amplifier,
and the second switch is turned on to couple to the second input
terminal and the second terminal of the sense amplifier.
4. The sensing-amplifying device of claim 3, wherein the reference
switch unit comprises: a third switch, selectively coupled to the
reference unit and the second terminal of the sense amplifier,
wherein when operating in the single memory unit mode, the first
switch is turned on to couple to the first input terminal and the
first terminal of the sense amplifier, and the third switch is
turned on to couple to the reference unit and the second terminal
of the sense amplifier.
5. The sensing-amplifying device of claim 3, wherein the reference
switch unit further comprises: a fourth switch, selectively coupled
to the reference unit and the first terminal of the sense
amplifier, wherein when operating in the single memory unit mode,
the second switch is turned on to couple to the second input
terminal and the second terminal of the sense amplifier, and the
fourth switch is turned on to couple to the reference unit and the
first terminal of the sense amplifier.
6. The sensing-amplifying device of claim 5, wherein the single
memory unit mode is that the sense amplifier reads a value of one
of the first memory unit and the second memory unit and reads a
value of the reference unit, so as to determine a bit of data; the
twin memory unit mode is that the sense amplifier reads a value of
the first memory unit and a value of the second memory unit, so as
to determine a bit of data.
7. The sensing-amplifying device of claim 5, wherein each of the
first memory unit and the second memory unit comprises a memory
element, and the reference unit comprises a reference element,
wherein both a material and a structure of the reference element
and the memory element are the same.
8. The sensing-amplifying device of claim 7, wherein the memory
element and the reference element are phase change memory elements.
Description
RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No.
16/361,199, filed Mar. 21, 2019, which claims priority to China
Application Serial Number 201811591518.1, filed Dec. 25, 2018, all
of which are herein incorporated by reference.
BACKGROUND OF THE INVENTION
Field of Invention
[0002] The present invention relates to a sensing-amplifying
device. More particularly, the present invention relates to a
sensing-amplifying device applied in a memory.
Description of Related Art
[0003] In memory technology, a resistive random-access memory
includes a phase change memory (PCM), which can change a resistance
value of a component by a crystal phase change of the material
thereof, so as to store information by a change in resistance
value. When the material in the memory element is crystalline, it
exhibits a low resistance value, and conversely, when the material
in the memory element is in an amorphous state, it exhibits a high
resistance value, thereby storing data such as "1" or "0".
[0004] In the prior art, when reading the data of the memory unit
in the memory device, the single memory unit is turned on, and the
current corresponding to the single memory unit is compared with
the reference current to determine whether a single data stored in
the memory unit is "1" or "0". However, comparisons with current
values may cause errors due to different bias voltages.
Furthermore, the judgment of data reading with a single memory unit
is liable to cause errors. If the memory device for reading data
need to be reconstructed for preventing the above-mentioned error,
the sense amplifier needs to be adjusted accordingly.
[0005] As shown in FIG. 1, it is a traditional memory with a sense
amplifier. One terminal is coupled to one of the bit lines, and
another terminal is coupled to the reference unit. The current of
one of the bit lines and the current of the reference unit are
compared to determine whether the data stored in the memory unit is
"1" or "0". The disadvantages of this structure are described
below: (1) such memory can only be used in a memory device which
has single memory mode; (2) the reference unit is a transistor, and
the value of the reference current is related to the value of the
reference bias. The reference current needs to be set at the middle
value between the high current and the low current of the memory
element, such that a symmetrical noise margin may be obtained.
However, if the high current and the low current of the memory
element are shifted, the reference voltage must be adjusted. In
addition, the reference current is generated from the transistor,
and the current of the resistive random-access memory unit is
decided according to the resistance across the memory unit. During
manufacturing, the process variation mechanism of the resistor in
the memory unit is different from that of the transistor, so the
reference current cannot accurately adapt to the change of the
memory unit.
SUMMARY OF THE INVENTION
[0006] The following presents a brief summary of the disclosure in
order to provide a basic understanding to the reader. This summary
is not an extensive overview of the disclosure and it does not
identify key/critical elements of the present invention or
delineate the scope of the present invention.
[0007] One aspect of the present disclosure is directed to A
sensing-amplifier device includes a first input terminal, a second
input terminal, a reference unit, and a sense amplifier. The first
input terminal is coupled to a first memory unit. The second input
terminal is coupled to a second memory unit. The reference unit is
configured to provide a reference signal. The switching unit is
selectively coupled to the first input terminal, the second input
terminal, and a reference unit. The sense amplifier includes two
terminals. The two terminals of the sense amplifier are coupled to
the first input terminal and the second input terminal respectively
by switching the switching unit so as to operate in a twin memory
unit mode, or one terminal of the sense amplifier is coupled to the
first input terminal or the second input terminal and the other
terminal of the sense amplifier is coupled to the reference unit by
switching the switching unit so as to operate in a single memory
unit mode.
[0008] These and other features, aspects, and advantages of the
present invention, as well as the technical means and embodiments
employed by the present invention, will become better understood
with reference to the following description in connection with the
accompanying drawings and appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The invention can be more fully understood by reading the
following detailed description of the embodiment, with reference
made to the accompanying drawings as follows:
[0010] FIG. 1 is a diagram of a sensing-amplifying device according
to prior art.
[0011] FIG. 2 is a relation diagram of a sensing-amplifying device
and a memory according to some embodiments of the present
disclosure.
[0012] FIG. 3 is an operation relation diagram of a
sensing-amplifying device and a memory according to some
embodiments of the present disclosure.
[0013] FIG. 4 is an operation relation diagram of a
sensing-amplifying device and a memory according to some
embodiments of the present disclosure.
[0014] FIG. 5 is an operation relation diagram of a
sensing-amplifying device and a memory according to some
embodiments of the present disclosure.
[0015] FIG. 6 is a relation diagram of a sensing-amplifying device
and a memory according to some embodiments of the present
disclosure.
[0016] In accordance with common practice, the various described
features/elements are not drawn to scale but instead are drawn to
best illustrate specific features/elements relevant to the present
invention. Also, wherever possible, like or the same reference
numerals are used in the drawings and the description to refer to
the same or like parts.
DETAILED DESCRIPTION
[0017] The detailed description provided below in connection with
the appended drawings is intended as a description of the present
examples and is not intended to represent the only forms in which
the present example may be constructed or utilized. The description
sets forth the functions of the example and the sequence of steps
for constructing and operating the example. However, the same or
equivalent functions and sequences may be accomplished by different
examples.
[0018] Unless otherwise defined herein, scientific and technical
terminologies employed in the present disclosure shall have the
meanings that are commonly understood and used by one of ordinary
skill in the art. Unless otherwise required by context, it will be
understood that singular terms shall include plural forms of the
same and plural terms shall include singular forms of the same.
[0019] Reference is now made to FIG. 2. FIG. 2 is a block diagram
of a sensing-amplifying device 100 and memories 500, 600 according
to some embodiments of the present disclosure. For facilitating the
understanding of the present disclosure, memories 500, 600 are
introduced firstly. The memories 500, 600 as shown in the figure
are, for example, phase change memories (PCM); however, the present
disclosure is not limited thereto. As shown in FIG. 2, the memory
devices 500, 600 comprise memory arrays 510, 610 which include word
lines WL1, WL2, bit lines BL1, BL2, and bit line driving circuits
520, 620. The memory arrays 510, 610 comprise a plurality of memory
units (memory units MA1, MA2 are used as examples in the figure).
The bit line driving circuits 520, 620 comprise signal lines DL1,
DL2.
[0020] Referring to FIG. 2, the sensing-amplifying device 100
comprises a first input terminal 110, a second input terminal 120,
a reference unit 130, a switching unit 140 and a sense amplifier
150. With respect to the structure, the first input terminal 110 is
coupled to the first memory unit MA1 through the bit line driving
circuit 520 of the memory 500, and the second input terminal 120 is
coupled to the second memory unit MA2 through the bit line driving
circuit 620 of the memory 600. As the structure illustrated in FIG.
2, the first input terminal 110 and the second input terminal 120
can be used to read data stored in the first memory unit MA1 and
the second memory unit MA2 based on the actual requirements. The
reference unit 130 is configured to provide a reference signal. The
switching unit 140 is selectively coupled to the first input
terminal 110, the second input terminal 120 and the reference unit
130.
[0021] With respect to the operation, two terminals of the sense
amplifier 150 are coupled to the first input terminal 110 and the
second input terminal 120 respectively by switching the switching
unit 140 so as to operate in a twin memory unit mode, or one
terminal of the sense amplifier 150 is coupled to the first input
terminal 110 or the second input terminal 120, and the other
terminal of the sense amplifier 150 is coupled to the reference
unit 130 by switching the switching unit 140 so as to operate in a
single memory unit mode. In one embodiment of the present
disclosure, the sensing-amplifying device 100 can operate in the
twin memory unit mode or the single memory unit mode. The twin
memory unit mode is an operation mode that two memory units are
used to store a bit of data, and the single memory unit mode is an
operation mode that single memory unit is used to store a bit of
data, which will be described in detail as below.
[0022] FIG. 3 is an operation relation diagram of a
sensing-amplifying device 100 and memories 500, 600 according to
some embodiments of the present disclosure. As shown in the figure,
two terminals of the sense amplifier 150 are a first terminal and a
second terminal respectively. The switching unit 140 comprises a
first switch SW1 and a second switch SW2. The first switch SW1 is
selectively coupled to the first input terminal 110 and the first
terminal of the sense amplifier 150. The second switch SW2 is
selectively coupled to the second input terminal 120 and the second
terminal of the sense amplifier 150. When operating in the twin
memory unit mode, the first switch SW1 is turned on to couple to
the first input terminal 110 and the first terminal of the sense
amplifier 150, and the second switch SW2 is turned on to couple to
the second input terminal 120 and the second terminal of the sense
amplifier 150. As such, the data stored in the first memory unit
MA1 and the second memory unit MA2 can be read out and compared
through path 11 and path 12 by the sense amplifier 150, and an
output data DOUT can be provided according to the compared
result.
[0023] FIG. 4 is an operation relation diagram of a
sensing-amplifying device 100 and memories 500, 600 according to
some embodiments of the present disclosure. As shown in the figure,
the switching unit 140 further comprises a third switch SW3. The
third switch SW3 is selectively coupled to the reference unit 130
and the second terminal of the sense amplifier 150. When operating
in a single memory unit mode, the first switch SW1 is turned on to
couple to the first input terminal 110 and the first terminal of
the sense amplifier 150, and the third switch SW3 is turned on to
couple to the reference unit 130 and the second terminal of the
sense amplifier 150. As such, the data stored in the first memory
unit MA1 can be read through path 13, and the reference data of the
reference unit 130 can be read through path 14, so that the sense
amplifier 150 can compare the above-mentioned data to provide the
output data DOUT according to the compared result.
[0024] FIG. 5 is an operation relation diagram of a
sensing-amplifying device 100 and memories 500, 600 according to
some embodiments of the present disclosure. As shown in the figure,
the switching unit 140 further comprises a fourth switch SW4. The
fourth switch SW4 is selectively coupled to the reference unit 130
and the first terminal of the sense amplifier 150. When operating
in the single memory unit mode, the second switch SW2 is turned on
to couple to the second input terminal 120 and the second terminal
of the sense amplifier 150, and the fourth switch SW4 is turned on
to couple to the reference unit 130 and the first terminal of the
sense amplifier 150. As such, the reference data of the reference
unit 130 can be read through path IS, and the data stored in the
second memory unit MA2 can be read through path 16, so that the
sense amplifier 150 can compare the above-mentioned data to provide
the output data DOUT according to the compared result.
[0025] In some embodiments, the single memory unit mode is that the
sense amplifier 150 reads a value of one of the first memory unit
MA1 or the second memory unit MA2 through the bit line driving
circuit 520, 620 of the memory 500, 600 and reads a value of the
reference unit 130 so as to determine a bit of data. The twin
memory unit mode is that the sense amplifier 150 reads a value of
the first memory unit MA1 and a value of the second memory unit MA2
so as to determine a bit of data.
[0026] In some embodiments, each of the first memory unit MA1 and
the second memory unit MA2 comprises a memory element or a memory
layer (not shown). The memory layer is made of a specific material,
in which the specific material may change its internal status based
on external operating conditions (for example: crystalline,
amorphous, magnetic field, etc.) and exhibits different electrical
properties. Thus, according to different electrical properties (for
example: resistance, magnetoresistance, etc.) presented by the
memory layer, the first memory unit MA1 and the second memory unit
MA2 store different data equivalently.
[0027] In addition, the reference unit 130 comprises a reference
element or a memory layer (not shown). The material and the
structure of the reference element or the memory layer are the same
as that of the memory element.
[0028] In some embodiments, the first memory unit MA1 and the
second memory unit MA2 and the reference unit 130 may be phase
change random access memory units, and the memory layer may be
implemented by a material such as a chalcogenide, but the
embodiments of the present disclosure are not limited thereto. At
different operating temperatures, the memory layer has different
crystalline states to store different data equivalently.
[0029] FIG. 6 is a relation diagram of a sensing-amplifying device
and a memory according to some embodiments of the present
disclosure. In this embodiment, as shown in the figure, the
sensing-amplifying device 100A comprises a current mirror 160A, a
first transistor T1, a second transistor T2, a first comparator
CA1, a second comparator CA2, a reference unit 130A, a first input
terminal 110A, a second input terminal 120A, a switching unit 140A,
and a sense amplifier 150A. The current mirror 160A comprises a
first output terminal O1 and a second output terminal O2. The first
transistor T1 comprises a first terminal, a second terminal and a
control terminal, and the first terminal of the first transistor T1
is coupled to the first output terminal O1 of the current mirror
160A. The second transistor T2 comprises a first terminal, a second
terminal and a control terminal, and the second transistor T2 of
the first terminal is coupled to the second output terminal O2 of
the current mirror 160A.
[0030] In addition, the first comparator CA1 comprises a first
input terminal, a second input terminal, and a first output
terminal. The first input terminal is configured to receive a bias
signal REF BIAS. The second input terminal is coupled to the second
terminal of the first transistor T1. The first output terminal is
coupled to the control terminal of the first transistor T1. The
second comparator CA2 comprises a third input terminal, a fourth
input terminal, and a second output terminal. The third input
terminal is configured to receive the bias signal REF BIAS. The
fourth input terminal is coupled to the second terminal of the
second transistor T2. The second output terminal is coupled to the
control terminal of the second transistor T2. The reference unit
130A is configured to provide the reference signal. The first input
terminal 110A is coupled to the first memory unit MA1 through the
bit line driving circuit 520 of the memory 500. The second input
terminal 120A is coupled to the second memory unit MA2 through the
bit line driving circuit 620 of the memory 600. As the structure
illustrated in FIG. 6, the first input terminal 110A and the second
input terminal 120A can be used to read data stored in the first
memory unit MA1 and the second memory unit MA2 based on the actual
requirements.
[0031] In addition, the switching unit 140A is selectively coupled
to the first input terminal 110A, the second input terminal 120A,
the reference unit 130A, the first transistor T1, and the second
transistor T2. The sense amplifier 150A comprises two terminals.
The two terminals of the sense amplifier 150A are coupled to the
first input terminal 110A and the second input terminal 120A
respectively by switching the switching unit 140A so as to operate
in the twin memory unit mode, or one terminal of the sense
amplifier 150A is coupled to the first input terminal 110A or the
second input terminal 120A and the other terminal of the sense
amplifier 150A is coupled to the reference unit 130A by switching
the switching unit 140A so as to operate in a single memory unit
mode.
[0032] For example, the two terminals of the sense amplifier 150A
are a first terminal and a second terminal respectively. The
switching unit 140A comprises a first switch SW1 and a second
switch SW2. The first switch SW1 is selectively coupled to the
first input terminal 110A and the first terminal of the sense
amplifier 150A. The second switch SW2 is selectively coupled to the
second input terminal 120A and the second terminal of the sense
amplifier 150A. When operating in the twin memory unit mode, the
first switch SW1 is turned on to couple to the first input terminal
110A and the first terminal of the sense amplifier 150A, and the
second switch SW2 is turned on to couple to the second input
terminal 120A and the second terminal of the sense amplifier 150A.
As such, the data stored in the first memory unit MA1 and the
second memory unit MA2 can be read out and compared by the sense
amplifier 150A, and an output data DOUT can be provided according
to the compared result.
[0033] In another embodiment, as shown in the figure, the switching
unit 140A further comprises a third switch SW3. The third switch
SW3 is selectively coupled to the reference unit 130A and the
second terminal of the sense amplifier 150A. When operating in the
single memory unit mode, the first switch SW1 is turned on to
couple to the first input terminal 110A and the first terminal of
the sense amplifier 150A, and the third switch SW3 is turned on to
couple to the reference unit 130A and the second terminal of the
sense amplifier 150A. As such, the data stored in the first memory
unit MA1 and the reference data of the reference unit 130A can be
read by the sense amplifier 150A so as to compare the
above-mentioned data to provide the output data DOUT according to
the compared result.
[0034] In another embodiment, as shown in the figure, the switching
unit 140A further comprises a fourth switch SW4. The fourth switch
SW4 is selectively coupled to the reference unit 130A and the first
terminal of the sense amplifier 150. When operating in the single
memory unit mode, the second switch SW2 is turned on to couple to
the second input terminal 120A and the second terminal of the sense
amplifier 150A, and the fourth switch SW4 is turned on to couple to
the reference unit 130A and the first terminal of the sense
amplifier 150A. As such, the reference data of the reference unit
130A and the data stored in the second memory unit MA2 can be read
by the sense amplifier 150A so as to compare the above-mentioned
data for providing the output data DOUT according to the compared
result.
[0035] Based on the aforementioned embodiments, the present
disclosure provides a sensing-amplifying device. For solving the
problem that reading data from single memory unit easily cause
errors, the accuracy of determining the data of the memory unit can
be increased by reading the data from the dual memory unit to
determine whether the data stored in the memory unit is "1" or "0".
As such, the sensing-amplifying device needs to be adjusted
accordingly to comply with the requirement of reading data from
twin memory unit. In addition, when there is a need, the memory can
be switched to single memory operating mode so as to increase the
capacity of the memory. At this time, the structure of the
sensing-amplifying device of the present disclosure can also be
applied in single memory operation mode.
[0036] Although the present invention has been described in
considerable detail with reference to certain embodiments thereof,
other embodiments are possible. Therefore, the spirit and scope of
the appended claims should not be limited to the description of the
embodiments contained herein.
[0037] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
present invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
present invention cover modifications and variations of this
invention provided they fall within the scope of the following
claims.
* * * * *