U.S. patent application number 16/799762 was filed with the patent office on 2020-06-18 for method for manufacturing light emitting unit.
This patent application is currently assigned to Genesis Photonics Inc.. The applicant listed for this patent is Genesis Photonics Inc.. Invention is credited to Jing-En Huang, Kuan-Chieh Huang, Yi-Ru Huang, Long-Lin Ke, Shao-Ying Ting, Sie-Jhan Wu.
Application Number | 20200194617 16/799762 |
Document ID | / |
Family ID | 54848037 |
Filed Date | 2020-06-18 |
United States Patent
Application |
20200194617 |
Kind Code |
A1 |
Ting; Shao-Ying ; et
al. |
June 18, 2020 |
METHOD FOR MANUFACTURING LIGHT EMITTING UNIT
Abstract
A method for manufacturing a light emitting unit is provided. A
semiconductor structure including a plurality of light emitting
dice separated from each other is provided. A molding compound is
formed to encapsulate the light emitting dice. Each of the light
emitting dice includes a light emitting element, a first electrode
and a second electrode. A patterned metal layer is formed on the
first electrodes and the second electrodes of the light emitting
dice. A substrate is provided, where the molding compound is
located between the substrate and the light emitting elements of
the light emitting dice. A cutting process is performed to cut the
semiconductor structure, the patterned metal layer, the molding
compound and the substrate so as to define a light emitting unit
with a series connection loop, a parallel connection loop or a
series-parallel connection loop.
Inventors: |
Ting; Shao-Ying; (Tainan
City, TW) ; Huang; Kuan-Chieh; (Tainan City, TW)
; Huang; Jing-En; (Tainan City, TW) ; Huang;
Yi-Ru; (Tainan City, TW) ; Wu; Sie-Jhan;
(Tainan City, TW) ; Ke; Long-Lin; (Tainan City,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Genesis Photonics Inc. |
Tainan City |
|
TW |
|
|
Assignee: |
Genesis Photonics Inc.
Tainan City
TW
|
Family ID: |
54848037 |
Appl. No.: |
16/799762 |
Filed: |
February 24, 2020 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
16231914 |
Dec 24, 2018 |
10573779 |
|
|
16799762 |
|
|
|
|
15859714 |
Jan 1, 2018 |
10164145 |
|
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16231914 |
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|
14957630 |
Dec 3, 2015 |
9859459 |
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15859714 |
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14474283 |
Sep 1, 2014 |
9219211 |
|
|
14957630 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H05B 45/46 20200101;
H01L 33/08 20130101; H05B 45/00 20200101; H01L 33/52 20130101; H01L
2224/04105 20130101; H01L 2924/0002 20130101; H01L 33/62 20130101;
H01L 2224/24137 20130101; H01L 33/486 20130101; H01L 33/005
20130101; H01L 33/50 20130101; H01L 2933/005 20130101; H01L 33/64
20130101; H01L 2933/0066 20130101; H01L 2933/0041 20130101; H01L
33/507 20130101; H01L 2224/18 20130101; H01L 33/502 20130101; H01L
27/15 20130101; H01L 2224/19 20130101; H01L 33/0095 20130101; H01L
25/0753 20130101; H01L 2933/0016 20130101; H01L 2924/0002 20130101;
H01L 2924/00 20130101 |
International
Class: |
H01L 33/00 20060101
H01L033/00; H05B 45/46 20060101 H05B045/46; H05B 45/00 20060101
H05B045/00; H01L 33/64 20060101 H01L033/64; H01L 33/50 20060101
H01L033/50; H01L 33/48 20060101 H01L033/48; H01L 25/075 20060101
H01L025/075; H01L 33/52 20060101 H01L033/52; H01L 33/08 20060101
H01L033/08; H01L 33/62 20060101 H01L033/62 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 14, 2014 |
TW |
103124160 |
Claims
1. A method for manufacturing a light emitting unit, comprising:
providing a semiconductor structure comprising a plurality of light
emitting dices separated from each other, wherein each of the light
emitting dices comprises a light emitting element, a first
electrode and a second electrode, and the first electrode and the
second electrode are disposed at a same side of the light emitting
element, and the first electrode and the second electrode have a
gap therebetween; forming a molding compound to encapsulate the
light emitting dices, wherein the molding compound encapsulates the
light emitting element of each of the light emitting dices, and
exposes the first electrode and the second electrode of each of the
light emitting dices, and the molding compound is doped with a
phosphor material; forming a patterned metal layer on the first
electrodes and the second electrodes of the light emitting dices,
wherein the patterned metal layer directly contact the first
electrodes and the second electrodes of the light emitting dices;
providing a substrate, wherein the molding compound is located
between the substrate and the light emitting elements of the light
emitting dices; performing a cutting process to cut the molding
compound and the substrate so as to define at least a light
emitting unit having a series connection loop, a parallel
connection loop or a series-parallel connection loop; and providing
an external circuit disposed at one side of the light emitting
units adjacent to the patterned metal layer, the light emitting
units being electrically connected to the external circuit via the
patterned metal layer, wherein a gap is formed between the molding
compound and the external circuit.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of and claims the
priority benefit of U.S. application Ser. No. 16/231,914, filed on
Dec. 24, 2018, now allowed. The prior U.S. application Ser. No.
16/231,914 is a continuation application of and claims the priority
benefit of U.S. application Ser. No. 15/859,714, filed on Jan. 1,
2018, now patented. The prior U.S. application Ser. No. 15/859,714
is a continuation application of and claims the priority benefit of
U.S. application Ser. No. 14/957,630, filed on Dec. 3, 2015, now
patented. The prior U.S. application Ser. No. 14/957,630 is a
continuation application of and claims the priority benefit of U.S.
application Ser. No. 14/474,283, filed on Sep. 1, 2014, now
patented, which claims the priority benefit of Taiwan application
serial no. 103124160, filed on Jul. 14, 2014. The entirety of each
of the above-mentioned patent applications is hereby incorporated
by reference herein and made a part of this specification.
BACKGROUND
Technical Field
[0002] The invention relates to a light emitting unit, and
particularly relates to a method for manufacturing a light emitting
unit.
Related Art
[0003] Generally, series-parallel control of a light emitting unit
composed of a plurality of light emitting diode (LED) chips on a
circuit substrate is implemented according to a serial-parallel
connection method of voltage values and current values provided by
a power supplier when a circuit layout is designed on the circuit
substrate. However, since types of the LED chips are plural, i.e.
the voltage value and the current value required by each of the LED
chips are different, when the light emitting unit is disposed on
the circuit substrate, besides that it is difficult to achieve an
optimal light emitting effect, the appearance and cost of the
circuit substrate are also influenced due to modification of the
circuit layout.
[0004] For example, if an initial design of the circuit layout of
the circuit substrate is a circuit design of 4S1P, when a
conversion efficiency test is performed to modify the initial
design into a circuit design of 2S2P, since series-parallel
modification cannot be implemented after the circuit layout is
completed, jumpers, circuit disconnection or remanufacturing or
re-planning of the circuit layout are required in order to achieve
the required series-parallel design, by which not only a
manufacturing cost is increased, a manufacturing time is also
increased.
SUMMARY
[0005] The invention is directed to a method for manufacturing a
light emitting unit capable of selectively forming different series
connection loop, parallel connection loop or series-parallel
connection loop through a cutting process.
[0006] A method for manufacturing light emitting units comprising
providing a semiconductor structure comprising a plurality of light
emitting dices; forming an encapsulant covering the light emitting
dices; mounting the light emitting dices to a patterned conductive
layer coupled to a carrier board, wherein the light emitting dices
are electrically connected to the patterned conductive layer;
providing a substrate on the encapsulant, wherein the encapsulant
is located between the substrate and the light emitting dices; and
cutting the substrate, the encapsulant, the semiconductor
structure, and the carrier board so as to obtain the light emitting
units.
[0007] A method of manufacturing light emitting units comprising
providing a semiconductor structure comprising a substrate, a
phosphor-containing encapsulant, a plurality of light emitting
dices and an external circuit, wherein the phosphor-containing
encapsulant covers the light emitting dices located between the
substrate and the external circuit, and a patterned conductive
layer is formed on electrodes of the light emitting dices and is
physically coupled to the external circuit; and cutting the
semiconductor structure so as to obtain the light emitting
units.
[0008] A method of manufacturing light emitting units comprising
providing a semiconductor structure comprising a light transmissive
layer, an encapsulant containing a phosphor material and a
plurality sets of light emitting dices, wherein the encapsulant
covers the light emitting dices and is disposed between the light
transmissive layer and the light emitting dices; mounting a
plurality of sets of wirings to the plurality of sets of light
emitting dices to form series circuits and/or parallel circuits;
and performing a cutting process to obtain the light emitting
units, wherein each of the light emitting units at least comprises
one of the sets of light emitting dices and one of the sets of
wirings.
[0009] According to the above descriptions, the cutting process is
performed to cut the semiconductor structure, the patterned
conductive layer, the encapsulant and the substrate so as to define
the light emitting unit with the series connection loop, the
parallel connection loop or the series-parallel connection loop.
Therefore, a user is capable of selecting a cutting region by
himself according to a usage requirement, so as to form different
circuit loop designs. In this way, according to the method for
manufacturing the light emitting unit of the invention, the user
has better manufacturing flexibility, and the manufactured light
emitting unit has circuit loop designs of a plurality of
patterns.
[0010] In order to make the aforementioned and other features and
advantages of the invention comprehensible, several exemplary
embodiments accompanied with figures are described in detail
below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the invention.
[0012] FIG. 1 to FIG. 5 are schematic diagrams of a method for
manufacturing a light emitting unit according to an embodiment of
the invention.
[0013] FIG. 6 is a cross-sectional view of a light emitting unit
according to another embodiment of the invention.
[0014] FIG. 7A and FIG. 7B are cross-sectional views of different
cross-sections of a light emitting unit viewing according to still
another embodiment of the invention.
[0015] FIG. 8 is a cross-sectional view of a light emitting unit
according to still another embodiment of the invention.
[0016] FIG. 9 is a cross-sectional view of a light emitting unit
according to still another embodiment of the invention.
[0017] FIG. 10 is a cross-sectional view of a light emitting unit
according to still another embodiment of the invention.
[0018] FIG. 11 is a cross-sectional view of a light emitting unit
according to still another embodiment of the invention.
DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS
[0019] FIG. 1 to FIG. 5 are schematic diagrams of a method for
manufacturing a light emitting unit according to an embodiment of
the invention. For simplicity's sake, FIG. 1 and FIG. 3 are top
views of a semiconductor structure 110 according to an embodiment
of the invention, FIG. 2 is a cross-sectional view of FIG. 1 along
a line A-A, FIG. 4 is a cross-sectional view of FIG. 3 along a line
B-B, and FIG. 5 is a cross-sectional view of FIG. 3 along a line
C'-C' obtained after the semiconductor structure 110 is cut along a
cutting region C.
[0020] Referring to FIG. 1 and FIG. 2, according to the method for
manufacturing a light emitting unit of the present embodiment of
the invention, first, the semiconductor structure 110 including a
plurality of light emitting dice 120 separated from each other is
provided, where each of the light emitting dice 120 includes a
light emitting element 122, a first electrode 124 and a second
electrode 126, the first electrode 124 and the second electrode 126
are disposed at a same side of the light emitting element 122, and
the first electrode 124 and the second electrode 126 have a gap G
therebetween. As shown in FIG. 2, the first electrode 124 and the
second electrode 126 of the present embodiment are substantially
designed to be coplanar, though the invention is not limited
thereto. The light emitting element 122 of each light emitting dice
120 may include a substrate (not shown), a light emitting layer
(not shown) and a second type semiconductor layer (not shown),
though the invention is not limited thereto. A light color of each
of the light emitting dice 120 can be the same or different, which
is determined according to an actual design requirement. The first
electrode 124 and a first type semiconductor layer (not shown)
directly contact each other and are electrically connected. The
second electrode 126 and the second type semiconductor layer (not
shown) directly contact each other and are electrically
connected.
[0021] Then, referring to FIG. 1 and FIG. 2, a molding compound 130
is formed to encapsulate the light emitting dice 120, where the
molding compound 130 encapsulates the light emitting element 122 of
each of the light emitting dice 120, and exposes the first
electrodes 124 and the second electrodes 126 of at least a part of
the light emitting dice 120.
[0022] Then, referring to FIG. 3, a patterned metal layer 140 is
formed on the first electrodes 124 and the second electrodes 126 of
the light emitting dice 120, where the patterned metal layer 140
directly contact the first electrodes 124 and the second electrodes
126 of the light emitting dice 120, and extends from the first
electrodes 124 and the second electrodes 126 to the molding
compound 130. It should be noticed that a material of the patterned
metal layer 140 of the present embodiment can be the same with a
material of the first electrode 124 and the second electrode 126 of
each light emitting dice 120, where the material of the patterned
metal layer 140 and the material of the first electrode 124 and the
second electrode 126 of each light emitting dice 120 is, for
example, Pt, Au, Ag, Ni, Ti, In, Sn, Bi, an alloy of the above
materials or a combination of the above materials. Alternatively,
the material of the patterned metal layer 140 is different to the
material of the first electrode 124 and the second electrode 126 of
each light emitting dice 120, where the material of the patterned
metal layer 140 is, for example, Pt, Au, Ag, Ni, Ti, In, Sn, Bi, an
alloy of the above materials or a combination of the above
materials, and the material of the first electrode 124 and the
second electrode 126 of each light emitting dice 120 is, for
example, Pt, Au, In, Sn, Bi, an alloy of the above materials or a
combination of the above materials.
[0023] Then, referring to FIG. 4, a substrate 150 is provided,
where the molding compound 130 is located between the substrate 150
and the light emitting elements 122 of the light emitting dice 120.
The substrate 150 of the present embodiment has a material of
glass, acryl, ceramic or sapphire or other transparent materials,
and is used for supporting the semiconductor structure 110, and
avails a light emitting and light guiding effect of the light
emitting dice 120. Preferably, the material of the substrate 150 is
glass, which has a characteristic of easy cutting to simplify the
manufacturing process.
[0024] Finally, referring to FIG. 3 and FIG. 5, a cutting process
is performed to cut the semiconductor structure 110, the patterned
metal layer 140, the molding compound 130 and the substrate 150 so
as to define a light emitting unit 100a with a series connection
loop, a parallel connection loop or a series-parallel connection
loop. In detail, the cutting process of the present embodiment is
to cut along a cutting region C of FIG. 3, and the formed light
emitting unit 100a includes at least two light emitting dice (four
light emitting dice are schematically illustrated in FIG. 5, which
are respectively denoted by 120a, 120b, 120c and 120d for
simplicity's sake). The first electrode 124 of the light emitting
dice 120a is electrically connected to the second electrode 126 of
the light emitting dice 120b through the patterned metal layer 140;
the first electrode 124 of the light emitting dice 120b is
electrically connected to the second electrode 126 of the light
emitting dice 120c through the patterned metal layer 140; and the
first electrode 124 of the light emitting dice 120c is electrically
connected to the second electrode 126 of the light emitting dice
120d through the patterned metal layer 140, so as to form the light
emitting unit 100a with the series connection loop (i.e. 4S).
[0025] Although the light emitting unit 100a with the series
connection loop (i.e. 4S) is formed after the cutting process, in
other embodiments, the cutting region can be changed according to
an actual requirement of the user to form the light emitting unit
of different circuit loops.
[0026] For example, referring to FIG. 3 and FIG. 6, FIG. 6 is a
cross-sectional view of FIG. 3 along a line D'-D' obtained after
the semiconductor structure 110 is cut along a cutting region D.
The cutting process of the present embodiment is to cut along the
cutting region D of FIG. 3, and the formed light emitting unit 100b
includes at least two light emitting dice (three light emitting
dice are schematically illustrated in FIG. 6, which are
respectively denoted by 120e, 120f and 120g for simplicity's sake).
The first electrode 124 of the light emitting dice 120e, the first
electrode 124 of the light emitting dice 120f and the first
electrode 124 of the light emitting dice 120g are electrically
connected to each other through the patterned metal layer 140, and
the second electrode 126 of the light emitting dice 120e, the
second electrode 126 of the light emitting dice 120f and the second
electrode 126 of the light emitting dice 120g are electrically
connected to each other through the patterned metal layer 140, so
as to form the light emitting unit 100a with the parallel
connection loop (i.e. 3P).
[0027] Alternatively, referring to FIG. 3, FIG. 7A and FIG. 7B,
FIG. 7A and FIG. 7B are cross-sectional views of FIG. 3 obtained
after cutting along a cutting region E, where FIG. 7A is a
cross-sectional view of FIG. 3 along a line I-I, and FIG. 7B is a
cross-sectional view of FIG. 3 along a line II-II. The cutting
process of the present embodiment is to cut along the cutting
region E of FIG. 3, and the formed light emitting unit 100c
includes at least four light emitting dice (four light emitting
dice are schematically illustrated in FIG. 3, which are
respectively denoted by 120h, 120i, 102j and 120k for simplicity's
sake). The second electrode 126 of the light emitting dice 120h is
electrically connected to the second electrode 126 of the light
emitting dice 120k through the patterned metal layer 140 (referring
to FIG. 3 and FIG. 7B), the first electrode 124 of the light
emitting dice 120h and the first electrode 124 of the light
emitting dice 120k are electrically connected to the second
electrode 126 of the light emitting dice 120i and the second
electrode 126 of the light emitting dice 120j through the patterned
metal layer 140 (referring to FIG. 3 and FIG. 7A), and the first
electrode 124 of the light emitting dice 120i is electrically
connected to the first electrode 124 of the light emitting dice
120j through the patterned metal layer 140, so as to form the light
emitting unit 100c with the series-parallel connection loop (i.e.
2S2P).
[0028] In other embodiments that are not illustrated, those skilled
in the art can select the cutting region on the semiconductor
structure 110 by themselves according to an actual requirement by
referring to descriptions of the aforementioned embodiments, so as
to form the light emitting unit with the required circuit loop (for
example, 2S3P, 4S1P, etc.).
[0029] Moreover, it should be noticed that the patterned metal
layer 140 of the present embodiment covers the first electrodes 124
and the second electrodes 126 of the light emitting dice 120 and
extends to a part of the molding compound 130. Namely, the
patterned metal layer 140 may increase a contact area of the first
electrodes 124 and the second electrodes 126 of the light emitting
dice 120, which avails assembling the light emitting units 100a,
100b and 100c formed after the cutting process with an external
circuit, by which an alignment accuracy and assembling efficiency
are effectively improved.
[0030] Moreover, referring to FIG. 8, FIG. 8 is a cross-sectional
view of a light emitting unit according to another embodiment of
the invention. The light-emitting unit 100d of the present
embodiment is similar to the light emitting unit 100a of FIG. 5,
and a difference therebetween is that in order to change a light
emitting color of the light emitting unit, a phosphor material 132
is mixed in the molding compound 130, where the phosphor material
132 is, for example, a yellow phosphor powder, a red phosphor
powder, a green phosphor powder, a blue phosphor powder, a yttrium
aluminium garnet phosphor powder or a combination of the above
materials.
[0031] FIG. 9 is a cross-sectional view of a light emitting unit
according to still another embodiment of the invention. Referring
to FIG. 9, the method for manufacturing the light emitting unit
100e further includes providing an external circuit 160, where the
external circuit 160 is disposed under the light emitting unit
100e, and the light emitting unit 100e is electrically connected to
the external circuit 160 through the patterned metal layer 140. For
example, the external circuit 160 of the present embodiment is, for
example, a circuit substrate, which includes a carrier board 162, a
first external contact 164a and a second external contact 164b. In
detail, the light emitting unit 100e is electrically connected to
the first external contact 164a and the second external contact
164b through the patterned metal layer 140. Since the light
emitting dice 120a, 120b, 120c and 120d are electrically connected
through the patterned metal layer 140, by respectively imposing
positive electricity and negative electricity to the first external
contact 164a and the second external contact 164b of the external
circuit 160, the light emitting unit 100e is driven to emit light,
and it is unnecessary to additionally modify a circuit layout the
external circuit 160, by which better usage flexibility is
achieved.
[0032] Particularly, as shown in FIG. 10, in another embodiment,
the light emitting unit 100f may further include a heat dissipation
element 166, where the heat dissipation element 166 is disposed
between the light emitting unit 100f and the external circuit 160
to effectively enhance a heat dissipation efficiency, though the
invention is not limited thereto.
[0033] FIG. 11 is a cross-sectional view of a light emitting unit
according to yet another embodiment of the invention. Referring to
FIG. 9 and FIG. 11, a difference between the light emitting unit
100g of the present embodiment and the light emitting unit 100e of
the embodiment of FIG. 9 is that the external circuit 160' of the
present embodiment includes a carrier board 162 and a patterned
circuit layer 168 disposed on the carrier board 162 and
corresponding to the patterned metal layer 140, and the light
emitting unit 100g is electrically connected to the patterned
circuit layer 168 through the patterned metal layer 140.
Preferably, the patterned metal layer 140 and the patterned circuit
layer 168 are conformally disposed on the carrier board 162 to
achieve larger head dissipation area and alignment area, though the
invention is not limited thereto.
[0034] In summary, the cutting process is performed to cut the
semiconductor structure, the patterned metal layer, the molding
compound and the substrate so as to define the light emitting unit
with the series connection loop, the parallel connection loop or
the series-parallel connection loop. Therefore, the user is capable
of selecting a cutting region by himself according to a usage
requirement, so as to form different circuit loop designs. In this
way, according to the method for manufacturing the light emitting
unit of the invention, the user has better manufacturing
flexibility, and the manufactured light emitting unit may have
circuit loop designs of a plurality of patterns.
[0035] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
invention without departing from the scope or spirit of the
invention. In view of the foregoing, it is intended that the
invention cover modifications and variations of this invention
provided they fall within the scope of the following claims and
their equivalents.
* * * * *