U.S. patent application number 16/676736 was filed with the patent office on 2020-05-21 for high frequency magnetic films, method of manufacture, and uses thereof.
The applicant listed for this patent is ROGERS CORPORATION. Invention is credited to Yajie Chen, Yuanyuan Xing, Li Zhang, Xiaoyu Zhang.
Application Number | 20200161034 16/676736 |
Document ID | / |
Family ID | 69160070 |
Filed Date | 2020-05-21 |
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United States Patent
Application |
20200161034 |
Kind Code |
A1 |
Chen; Yajie ; et
al. |
May 21, 2020 |
HIGH FREQUENCY MAGNETIC FILMS, METHOD OF MANUFACTURE, AND USES
THEREOF
Abstract
A multilayer film includes a substrate; a first magnetic layer
disposed on the substrate and a second magnetic layer disposed on
the first magnetic layer. The first magnetic layer includes
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is
Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic
layer includes Fe.sub.(50-90)N.sub.(10-50) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The multilayer magnetic
film has, over a frequency range of 50 MHz to 10 GHz, a magnetic
permeability of greater than or equal to 1800 over a selected
frequency band in the frequency range; a magnetic loss tangent of
less than or equal to 0.3 over a selected frequency band in the
frequency range; and a cutoff frequency of greater than or equal to
1 GHz, or greater than or equal to 2 GHz.
Inventors: |
Chen; Yajie; (Brighton,
MA) ; Zhang; Xiaoyu; (Suzhou City, CN) ;
Zhang; Li; (Sichuan, CN) ; Xing; Yuanyuan;
(Suzhou City, CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ROGERS CORPORATION |
Chandler |
AZ |
US |
|
|
Family ID: |
69160070 |
Appl. No.: |
16/676736 |
Filed: |
November 7, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62767553 |
Nov 15, 2018 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01F 1/38 20130101; H01F
10/147 20130101; H01F 41/18 20130101; H01F 41/32 20130101; H01F
1/16 20130101 |
International
Class: |
H01F 1/16 20060101
H01F001/16; H01F 1/38 20060101 H01F001/38; H01F 41/18 20060101
H01F041/18; H01F 41/32 20060101 H01F041/32 |
Claims
1. A multilayer magnetic film, comprising: a substrate; a first
magnetic layer disposed on the substrate, wherein the first
magnetic layer comprises
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is
Si, Ta, Zr, Ti, Co, or a combination thereof; and a second magnetic
layer disposed on the first magnetic layer, wherein the second
magnetic layer comprises Fe.sub.(50-90)N.sub.(10-50) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30); wherein the multilayer
magnetic film has, over a frequency range of 50 MHz to 10 GHz,
preferably over a frequency range of 100 MHz to 5 GHz, more
preferably over a frequency range of 1 to 5 GHz, a magnetic
permeability of greater than or equal to 1800, preferably greater
than or equal to 2000, more preferably greater than or equal to
3000 over a selected frequency band in the frequency range,
preferably over a frequency band of 1 to 10 GHz; a magnetic loss
tangent of less than or equal to 0.3, preferably less than or equal
to 0.1 over a selected frequency band in the frequency range,
preferably over a frequency band of 1 to 10 GHz; and a cutoff
frequency of greater than or equal to 1 GHz, or greater than or
equal to 2 GHz, preferably greater than or equal to 5 GHz.
2. The multilayer magnetic film of claim 1, wherein the substrate
comprises a glass, polymer, or ceramic, preferably a ceramic.
3. The multilayer magnetic film of claim 1, wherein the first
magnetic layer has a thickness of 10 to 100 nanometers, and the
second magnetic layer has a thickness of 10 to 400 nanometers.
4. The multilayer magnetic film of claim 1, further comprising: an
additional first layer comprising
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20) disposed on the second
layer; and an additional second magnetic layer comprising
Fe.sub.(50-90)N.sub.(10-20) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30) disposed on the additional
first magnetic layer.
5. The multilayer magnetic film of claim 4, comprising further
additional first and second magnetic layers disposed on the
additional second magnetic layer in alternation.
6. The multilayer magnetic film of claim 4, wherein the first
magnetic layer and the second magnetic layer have a total thickness
of 20 to 500 nanometers.
7. An article comprising the multilayer film of claim 1, preferably
wherein the article is a filter, transformer, inductor, antenna,
electronic integrated circuit chip, or electromagnetic shielding
device.
8. The article of claim 7, wherein the article is a component of an
electronic device, preferably a mobile phone, a desktop computer, a
laptop computer, a notebook computer, a wireless or LAN network, a
power supply, an amplifier, a voltage-controlled oscillator, a
shrink power converter, more preferably an integrated electronic
device.
9. A method of forming the multilayer magnetic film of claim 1, the
method comprising: depositing the first magnetic layer onto a side
of the substrate; and depositing the second magnetic layer onto a
side of the first magnetic layer opposite to the substrate.
10. The method of claim 9, wherein the depositing comprises rf/DC
sputtering, electron beam deposition, or a combination thereof.
11. The method of claim 10, further comprising depositing an
additional first layer on a side of the second layer opposite the
first layer.
12. The method of claim 11, further comprising depositing an
additional second layer on a side of the additional first layer
opposite the second layer.
13. The method of claim 9, comprising adjusting the thickness of
each layer to adjust the magnetic loss tangent of the multilayer
magnetic film, the magnetic anisotropy of the magnetic multilayer
film, or both.
14. A multilayer magnetic film made by the method of claim 9.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of U.S. Provisional
Patent Application Ser. No. 62/767,553 filed Nov. 15, 2018. The
related application is incorporated herein in its entirety by
reference.
BACKGROUND
[0002] This disclosure relates generally to high frequency magnetic
films, methods for their manufacture, and uses thereof, for example
in integrated circuits, power supply systems, antennas, and the
like.
[0003] Newer designs and manufacturing techniques have driven
electronic components to increasingly smaller dimensions and higher
frequencies. One approach to reducing electronic component size has
been the use of magnetic materials. In particular, ferrites,
ferroelectrics, and multiferroics have been widely studied as
functional materials with enhanced microwave properties. While the
high permeability of magnetic materials increases the DC value of
inductance, it remains a challenge to extend that magnetic
permeability and corresponding inductance enhancement to high
frequencies (e.g., 1 to 5 gigahertz (GHz)), which are desired for
various mobile applications. Magnetic permeability at these
frequencies is sharply deteriorated due to Snoek's limit of the
materials. At the intrinsic ferromagnetic resonance (FMR) frequency
of magnetic materials (typically 1-2 GHz for large blanket films),
the relative magnetic permeability drops to unity and the magnetic
loss tangent peaks, such that the inductance enhancement due to the
material is negligible and the losses are dominant It is possible
to enhance the frequency response of magnetic permeability by
varying methods of definition and patterning of the materials, but
there still remains a need in the art for materials and methods
that can provide high magnetic permeability and high resonance
frequency over high bandwidths.
BRIEF DESCRIPTION
[0004] Disclosed herein is a multi-layer magnetic film and a method
of making the same.
[0005] In an embodiment, a multilayer film includes a substrate; a
first magnetic layer disposed on the substrate and a second
magnetic layer disposed on the first magnetic layer. The first
magnetic layer includes
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is
Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic
layer includes
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10).
[0006] The multilayer magnetic film has, over a frequency range of
50 megahertz (MHz) to 10 GHz, preferably over a frequency range of
100 MHz to 5 GHz, more preferably over a frequency range of 1 to 5
GHz, a magnetic permeability of greater than or equal to 1800,
preferably greater than or equal to 2000, more preferably greater
than or equal to 3000 to 5000 over a selected frequency band in the
frequency range, preferably over a frequency band of 1 to 10 GHz; a
magnetic loss tangent of less than or equal to 0.3, preferably less
than or equal to 0.1, more preferably 0.01 to 0.1 over a selected
frequency band in the frequency range, preferably over a frequency
band of 1 to 10 GHz; and a cutoff frequency of greater than or
equal to 1 GHz, or greater than or equal to 2 GHz, preferably
greater than or equal to 5 GHz, or 1 to 8 GHz.
[0007] In an embodiment, a method of forming the multilayer film
includes depositing the first magnetic layer onto a side of the
substrate; and depositing the second magnetic layer onto a side of
the first magnetic layer opposite to the substrate.
[0008] Articles includes the multi-layer magnetic films are further
described. The article is preferably a filter, transformer,
inductor, antenna, electronic integrated circuit chip, or
electromagnetic shielding device.
[0009] The above and other features and advantages are readily
apparent from the following detailed description, examples, and
claims when taken in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Referring to the exemplary non-limiting figures wherein like
elements are numbered alike:
[0011] FIG. 1 is a cross-sectional view of an embodiment of a
multilayer magnetic film;
[0012] FIG. 2 is a cross-sectional view of another embodiment of a
multilayer magnetic film;
[0013] FIG. 3 is a plot showing the high frequency characteristics
of comparative Co- and Fe-based thin films and multilayers measured
at room temperature;
[0014] FIG. 4 is a surface profile of an FeN film by profilometry
and atomic force microscopy (AFM);
[0015] FIG. 5 is a magnetic hysteresis of FeN films along easy and
hard magnetizing directions in a plane of the film;
[0016] FIG. 6 is a magnetic permeability spectrum of an FeN film
with 60 nanometer (nm) thickness;
[0017] FIG. 7 is a surface profile of an FeN film by profilometry
and AFM;
[0018] FIG. 8 is a magnetic permeability spectrum of an
Fe.sub.66N.sub.18B.sub.16 film with 50 nm thickness;
[0019] FIG. 9 shows the relationship between effective resistivity
and magnetic permeability of an Fe.sub.83-xN.sub.17B.sub.x film
with differing boron content;
[0020] FIG. 10 is magnetic spectra of
Fe.sub.74N.sub.26/Fe.sub.66N.sub.18B.sub.16 bi-layer films with
various thicknesses of FeNB;
[0021] FIG. 11 is a magnetic permeability for
Fe.sub.74N.sub.26/Fe.sub.72N.sub.18B.sub.10 bi-layer films with
different thicknesses of Fe.sub.72N.sub.18B.sub.10;
[0022] FIG. 12 shows the relationship between effective resistivity
and magnetic permeability of an
Fe.sub.82N.sub.18/Fe.sub.72N.sub.18B.sub.10/glass film with
different thicknesses of an FeNB layer;
[0023] FIG. 13 is a magnetic hysterisis of an FeTaN film with
thickness of 80 nm along x and y directions in a plane of the
film;
[0024] FIG. 14 is a magnetic permeability spectrum of 80 nm-thick
Fe.sub.74Ta.sub.6N.sub.20 film on a glass substrate;
[0025] FIG. 15 is magnetic spectra for
Fe.sub.74Ta.sub.6N.sub.20/Fe.sub.66N.sub.18B.sub.16 bi-layer
films;
[0026] FIG. 16 shows the relationship between effective resistivity
and magnetic permeability of an
Fe.sub.83Ta.sub.6N.sub.11/Fe.sub.72N.sub.18B.sub.10/glass film with
different thicknesses of an FeNB layer;
[0027] FIG. 17 is magnetic spectra for
Fe.sub.74Ta.sub.6N.sub.20/Fe.sub.72N.sub.18B.sub.10 bi-layer
films;
[0028] FIG. 18 shows the relationship between effective resistivity
and total tri-layer film thickness of
Fe.sub.72N.sub.18B.sub.10/Fe.sub.83N.sub.11/Fe.sub.72N.sub.18B.sub.10
tri-layer films;
[0029] FIG. 19 is magnetic spectra of
Fe.sub.72N.sub.18B.sub.10/Fe.sub.82N.sub.18/Fe.sub.82N.sub.18B.sub.10
tri-layer films;
[0030] FIG. 20 shows the relationship between effective resistivity
and total tri-layer film_thickness of an
Fe.sub.72N.sub.18B.sub.10/Fe.sub.83Ta.sub.6N.sub.18/Fe.sub.72N.sub.18B.su-
b.10 tri-layered structure;
[0031] FIG. 21 is magnetic spectra of an
Fe.sub.72N.sub.18B.sub.10/Fe.sub.72Ta.sub.18N.sub.10/Fe.sub.72N.sub.18B.s-
ub.10 tri-layered structure;
[0032] FIG. 22 is magnetic spectra for
Fe.sub.82N.sub.18/Ta.sub.88N.sub.12 bilayer films;
[0033] FIG. 23 is magnetic spectra for
Fe.sub.72N.sub.18B.sub.10/Ta.sub.88N.sub.12 bilayer films;
[0034] FIG. 24 is magnetic spectra for
Fe.sub.83Ta.sub.6N.sub.11/Ta.sub.88N.sub.12 bilayer films;
[0035] FIG. 25 shows magnetic permeability at 0.5 GHz for a single
layer, bi-layer and tri-layer FeN-based films;
[0036] FIG. 26 is a Snoek product diagram at 0.5 GHz for a single
layer, bi-layer and tri-layer FeN-based multi-layered
structure;
[0037] FIG. 27 shows magnetic permeability at 0.5 GHz for a single
layer, bi-layer and tri-layer FeTaN-based multi-layered structure;
and
[0038] FIG. 28 is a Snoek product diagram at 0.5 GHz for a single
layer, bi-layer and tri-layer FeTaN-based multi-layered
structure.
DETAILED DESCRIPTION
[0039] The inventors hereof have developed multilayer magnetic
films with a combination of high magnetic permeability, low loss,
and excellent inductance over a broad frequency range. The magnetic
thin-films integrated with complementary metal-oxide-semiconductor
(CMOS) enable high-quality, high density, low-profile,
on-chip/in-package inductive components.
[0040] The multilayer films are disposed on a substrate, and
include a first magnetic layer, wherein the first magnetic layer
comprises Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10),
wherein M is Si, Ta, Zr, Ti, Co, Nb, or a combination thereof
(herein referred to as FeNB); and a second magnetic layer wherein
the second magnetic layer comprises Fe.sub.(50-90)N.sub.(10-50)
(herein referred to as FeN) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30) (herein referred to as
FeNTa). The multilayer magnetic films can operate over a frequency
range of 50 MHz to 10 GHz and can have a magnetic constant (also
known as a magnetic permeability) of greater than or equal to 1800
and a magnetic loss tangent of less than or equal to 0.3 measured
over a selected frequency band.
[0041] An illustration of a cross-sectional view of a multilayer
magnetic film 10 is shown in FIG. 1. Substrate 12 has a first side,
i.e., a first planar surface and a second side, i.e., an opposite
second planar surface. The substrate 12 can be of any suitable
material, for example a glass, an organic polymer, or a ceramic. In
an aspect, the substrate comprises a ceramic such as at least one
of MgO, Sic, Si.sub.3N.sub.4, alumina, silicon, or the like. The
substrate can be amorphous, single crystal, or polycrystalline. The
substrate 12 can have any suitable thickness, which will depend on
its support properties and the intended application. For example,
the substrate can have a thickness of 100 micrometers to 1
millimeters.
[0042] The first magnetic layer 14 is disposed on the first side of
the first planar surface. As stated above, the first magnetic layer
comprises Fe.sub.(50-80)N.sub.(10-10)B.sub.(1-20)M.sub.(0-10),
wherein M is Si, Ta, Zr, Ti, Co, Nb, or a combination thereof. In a
preferred aspect, the first magnetic layer comprises
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20), wherein the amount of M is
0. The first magnetic layer can have a thickness of 10 to 100
nanometers, for example 10 to 50 nanometers or 20 to 80
nanometers.
[0043] A second magnetic layer 16 is disposed on a side of the
first magnetic layer opposite the substrate. The second magnetic
layer comprises Fe.sub.(50-90)N.sub.(10-50) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The second magnetic layer
can have a thickness of 10 to 400 nanometers, for example 10 to 300
nanometers, or 50 to 400 nanometers.
[0044] The multilayer magnetic film can include additional layers,
in particular additional alternating first and second layers. As
shown in FIG. 2, an additional first magnetic layer 16, comprising
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20), is disposed on the second
magnetic layer 14. An additional second magnetic layer 18,
comprising Fe.sub.(50-90)N.sub.(10-50) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30), is disposed on the
additional first magnetic layer 16. Further additional first and
second magnetic layers can be disposed on the additional second
magnetic layer in alternation (not shown).
[0045] The first magnetic layer 14 and the second magnetic layer 16
can have a total thickness of 20 to 500 nanometers. In an
embodiment the first magnetic layer 14 has a thickness of 10 to 200
nm, and the second magnetic layer can have a thickness of 10 to 400
nm. In a particularly advantageous feature, the thickness of each
of the magnetic layers, the ratio of the thickness, or both, can be
adjusted to obtain a desired magnetic loss tangent of the
multilayer magnetic film, a desired magnetic anisotropy of the
magnetic multilayer film, or both.
[0046] A method of forming the multilayer magnetic film includes
depositing the first magnetic layer onto a side of the substrate;
and depositing the second magnetic layer onto a side of the first
magnetic layer opposite to the substrate. Deposition of alternating
layers proceeds until the entire film is manufactured. Deposition
can be by rf/DC sputtering, electron beam deposition, or a
combination thereof.
[0047] The multilayer magnetic films can be used over a frequency
range of 50 MHz to 10 GHz, preferably over a frequency range of 100
MHz to 5 GHz, more preferably over a frequency range of 1 to 5
GHz.
[0048] The multilayer magnetic films can have a magnetic
permeability of greater than or equal to 1800, preferably greater
than or equal to 2000, more preferably greater than or equal to
3000, or 1800 to 5000 over a selected frequency band in the
frequency range, preferably over a frequency band of 1 to 10 GHz.
As used herein, this terminology refers to the multilayer magnetic
films having at least one instance of the magnetic permeability
being greater than or equal to 1800 over the frequency band of 1 to
5 GHz, or 1 to 10 GHz.
[0049] The multilayer magnetic films can have a magnetic loss
tangent of less than or equal to 0.3, or less than 0.3, preferably
less than or equal to 0.1, or less than 0.1, or 0.01 to 0.3 over a
selected frequency band in the frequency range, preferably over a
frequency band of 1 to 10 GHz. As used herein, this terminology
refers to the multilayer magnetic films having at least one
instance of the magnetic loss tangent being less than or equal to
0.3 over the frequency band of 1 to 5 GHz, or 1 to 10 GHz.
[0050] The multilayer magnetic films can have a cutoff frequency of
greater than or equal to 1 GHz, or greater than 1 GHz, or greater
than or equal to 2 GHz, preferably greater than or equal to 5 GHz,
or 1 to 8 GHz.
[0051] The multilayer magnetic films can include additional layers,
for example, a top layer. The top layer can include
Al.sub.2O.sub.3. The top layer can include an insulating cap.
[0052] The multilayer magnetic films can be used in electronic
devices such as filters or inductors on electronic integrated
circuit chips for a wide variety of applications, for example,
electric power applications, data storage, and microwave
communication. The multilayer magnetic film can be used in low
frequency applications, for example, at a frequency of 50 MHz to 1
GHz, or in high frequency applications, for example 1 to 10 GHz.
The multilayer magnetic film can be used in antennas, and in
electronic devices such as mobile internet devices, and in
electronic devices, for example, cell phones, tablets, desktop
computers, laptop computers, notebook computers, and the like. In
an aspect, the device is a portable electronic device, for example
a handheld electronic device. The multilayer magnetic films can
further be used in power supply systems and antennas. The
multilayer magnetic films can advantageously be used in integrated
electronic devices.
[0053] The following examples are provided to illustrate the
present disclosure. The examples are merely illustrative and are
not intended to limit devices made in accordance with the
disclosure to the materials, conditions, or process parameters set
forth therein.
EXAMPLES
[0054] FIG. 3 is a plot showing initial magnetic permeability
versus resonance frequency/gigahertz (GHz) of various comparative
films, reproduced from Chin. Phys. B Vol. 24, No. 5 (2015)
05750.
Example 1
FeN/FeNB/Glass Bi-Layered Film Structure
Parameters for RF Magnetron Sputtering:
[0055] RF Power=80 to 120 Watts (W) [0056] Deposition pressure=0.3
to 0.6 pascals (Pa) [0057] Distance between target and substrate=8
centimeters (cm) [0058] Working gas: Argon; Reaction gas: Nitrogen
[0059] Target: [0060] Iron (99.9%), 2-inch (5.08 cm) disk; [0061] 2
pieces of boron (99.9%) chip with 2.5.times.2.5 square millimeters
(mm.sup.2) [0062] Deposition time: 5 to 30 minutes [0063]
Deposition temperature: ambient [0064] Substrate: Optical glass
Single Layer of FeN Film on Glass Substrate (Reference Example)
[0065] With reference to FIGS. 4-6, an FeN film had a composition
of Fe.sub.74N.sub.26 and thickness of 60 nanometers (nm) on a glass
substrate, measured by (energy-dispersive X-ray spectroscopy) EDXS
and profilometry, respectively. In the figures, the abbreviation G1
stands for glass. The FeN film having a film thickness of 60 nm
exhibited a fine grain size of 11 nm by atomic force microscopy
(AFM). The FeN film exhibited magnetic anisotropy in the film plane
depicted in magnetic hysteresis loops. The FeN film had a magnetic
permeability (.mu.') of 510 at 0.5 gigahertz (GHz) and a magnetic
loss tangent (tan .delta.) of 0.3 and retained a resonance
frequency of 1.71 GHz. The FeN film had a Snoek product of
0.87.times.10.sup.12. A summary of magnetic properties for the 60
nm thick FeN film on glass substrate is provided in Table 1. In
FIGS. 5 and 13, Easy (solid lines) or Hard (dashed lines)
magnetizing direction indicates an energetically favorable or
unfavorable direction of spontaneous magnetization,
respectively.
TABLE-US-00001 TABLE 1 Film thickness 0.5 GHz 1 GHz 1.5 GHz f.sub.r
Snoek product 47.pi.Ms Hc (nm) .mu.` tan.delta. .mu.` Tan.delta.
.mu.` tan.delta. (GHz) (.times. 10.sup.12) (kG) (Oe) 60 510 0.31
539 0.22 788 0.84 1.71 0.87 12.43 1.9
Single Layer of FeNB Film on Glass Substrate (Reference
Example)
[0066] With reference to FIGS. 7 and 8, the FeNB film on a glass
substrate had a composition of Fe.sub.66N.sub.18B.sub.16 and
thickness of 50 nm and an average grain size of 6.7 nm, measured by
EDXS and profilometry, respectively. The FeNB film on a glass
exhibited a magnetic permeability of 864 at 1 GHz and Snoek product
of 1.26.times.10.sup.12, respectively. A summary of magnetic
measurements for the Fe.sub.66N.sub.18B.sub.16film is provided in
Table 2.
TABLE-US-00002 TABLE 2 Film Snoek thickness 0.5 GHz 1 GHz 1.5 GHz
f.sub.r product (nm) .mu.` tan.delta. .mu.` Tan.delta. .mu.`
tan.delta. (GHz) (.times. 10.sup.12) 50 730 0.19 864 0.18 1547 0.80
1.73 1.26
[0067] With reference to FIG. 9, the effective resistivity of the
FeNB film increased with an increase in the content of boron (x=0,
13, 14, 16, 19). The magnetic permeability at 0.5 GHz was increased
in the resistivity range from 400 to 450 microohm meters
(.mu..OMEGA.m).
FeN/FeNB Bi-Layer on a Glass Substrate
[0068] An Fe.sub.66N.sub.18B.sub.16 film was deposited onto a glass
substrate, followed by deposition of an Fe.sub.74N.sub.26 film with
a constant thickness of 50 nm. The thickness of the
Fe.sub.66N.sub.18B.sub.16 film was in a range of 10-35 nm, varying
with deposition time. FIG. 10 shows .mu.' (solid lines) and .mu.''
(dashed lines) for varying thicknesses of the
Fe.sub.66N.sub.18B.sub.16 film in nm as indicated on the
figure.
[0069] With reference to FIG. 10, an FeN (50 nm)/FeNB (23 nm)
bi-layer film exhibited a high magnetic permeability of 1832 at 0.5
GHz and Snoek product of 3.72.times.10.sup.12, respectively. The
FeN (50 nm)/FeNB (23 nm) bi-layer film exhibited high magnetic
permeability of 2313 at 1.5 GHz. The composition of the FeNB film
was measured to be Fe.sub.66N.sub.18B.sub.16 by EDXS. A summary of
magnetic measurements for the FeN/FeNB bi-layered films with
different thicknesses of the FeNB layer is provided in Table 3.
TABLE-US-00003 TABLE 3 Film Snoek thickness 0.5 GHz 1 GHz 1.5 GHz
f.sub.r product (nm) .mu.` tan.delta. .mu.` tan.delta. .mu.`
tan.delta. (GHz) (.times. 10.sup.12) 10 899 0.44 1103 0.44 853 1.98
1.62 1.46 20 1062 0.53 1366 0.30 3221 0.41 1.83 1.94 23 1832 0.21
1679 0.27 2313 0.33 2.03 3.72 30 1042 0.02 1275 0.01 2069 0.29 2.01
2.09 35 853 0.09 1375 0.01 2201 0.23 2.01 1.71
Example 2
FeN/FeNB/Glass Bi-Layered Film Structure with Low Level of Boron
Content Parameters for RF Magnetron Sputtering
[0070] RF Power=80 to 120 W [0071] Deposition pressure=0.3 to 0.6
pascals (Pa) [0072] Distance between target and substrate=8
centimeters (cm) [0073] Working gas: Ar; Reaction gas: Nitrogen
[0074] Target: [0075] Iron (99.5%), 2-inch disk [0076] 2 pieces of
boron (99.5%) chip with 2.5.times.2.5 mm.sup.2 [0077] Deposition
time: 5 to 30 minutes [0078] Deposition temperature: ambient [0079]
Substrate: Optical glass
[0080] In this example, an FeNB film was deposited onto a glass
substrate, followed by a 50 nm thick FeN film deposited on the top
of the FeNB film at ambient temperature. The thickness of the FeNB
film varied with deposition time, and a constant thickness of 50 nm
for the FeN film was retained.
Magnetic Permeability Spectra for FeN/FeNB Films with Low Level of
Boron Content
[0081] With reference to FIG. 11, the FeNB film had a composition
of Fe.sub.72N.sub.18B.sub.10, and the FeN had a composition of
Fe.sub.74N.sub.26 measured by EDXS. FIG. 11 shows (solid lines) and
.mu.'' (dashed lines) for varying thicknesses of the
Fe.sub.66N.sub.18B.sub.10 film in nm as indicated on the figure.
The bi-layered film structure exhibited an increased magnetic
permeability from 1207 to 1741 with an increased thickness of the
FeNB seed layer from 15 nm to 25 nm. The Snoek product of the
FeN/FeNB film increased by 60% with an increase of thickness of the
FeNB seed layer from 15 nm to 25 nm. A summary of magnetic spectrum
measurements for the Fe.sub.74N.sub.26/Fe.sub.72N.sub.18B.sub.10
bi-layer films is provided in Table 4.
TABLE-US-00004 TABLE 4 FeNB thickness in FeN 0.5 GHz 1 GHz 1.5 GHz
f.sub.r Snoek product (50 nm)/FeNB/Glass (nm) .mu.` tan.delta.
.mu.` tan.delta. .mu.` tan.delta. (GHz) (.times. 10.sup.12) 15 895
0.08 1207 0.04 2023 0.31 2.08 1.86 20 1248 0.18 1707 0.15 2951 0.58
1.81 2.26 22 1427 0.11 1599 0.05 2690 0.45 1.96 2.80 25 1561 0.18
1741 0.06 3094 0.27 1.91 2.98 30 1297 0.16 1657 0.13 2972 0.38 1.91
2.48
Resistivity Versus Magnetic Permeability (at 0.5 GHz) for a
FeN/FeNB/Glass Structure
[0082] With reference to FIG. 12, the effective resistivity of the
FeN/FeNB/Glass film was affected by the thickness of the FeNB seed
layer. The resistivity increased with an increase of the FeNB
thickness. Magnetic permeability at 0.5 GHz was increased in the
resistivity range from 460 to 490 .mu..OMEGA.m.
Example 3
FeTaN/FeNB/Glass Bi-Layered Structure Parameters for RF Magnetron
Sputtering
[0083] RF Power=80 to 120 W [0084] Deposition pressure=0.3 to 0.6
pascals (Pa) [0085] Distance between target and substrate=8
centimeters (cm) [0086] Working gas: Ar (99.5%); Reaction gas:
Nitrogen (99.0%) [0087] Target: [0088] Iron (99.5%), 2-inch disk
[0089] 2 pieces of boron (99.5%) chip with 5.times.5 mm.sup.2
[0090] Deposition time: 5 to 30 minutes [0091] Deposition
temperature: ambient [0092] Substrate: Optical glass
Magnetic Properties and Magnetic Permeability of Single FeTaN Film
on a Glass Substrate
[0093] With reference to FIGS. 13 and 14, a summary of magnetic
spectrum measurements for a Fe.sub.74Ta.sub.6N.sub.20 single film
is provided in Table 5.
TABLE-US-00005 TABLE 5 Film thickness 0.5 GHz 1 GHz 1.5 GHz f.sub.r
Snoek product 47.pi.Ms Hc (nm) .mu.` tan.delta. .mu.` Tan.delta.
.mu.` tan.delta. (GHz) (.times. 10.sup.12) (kG) (Oe) 80 539 0.85
752 0.41 876 1.78 1.63 0.88 12.9 1.88
Magnetic Permeability of Bi-Layered FeTaN/FeNB Films on the Glass
Substrate
[0094] With reference to FIG. 15, the bi-layered film structure
included Fe.sub.74Ta.sub.6N.sub.20 and Fe.sub.66N.sub.18B.sub.16
films deposited on a glass substrate. A summary of magnetic
spectrum measurements for
Fe.sub.74Ta.sub.6N.sub.20/Fe.sub.66N.sub.18B.sub.16 bilayer films
is provided in Table 6.
TABLE-US-00006 TABLE 6 FeNB thickness in FeTaN(50 0.5 GHz 1 GHz 1.5
GHz f.sub.r Snoek product nm)/FeNB/Glass (nm) .mu.` tan.delta.
.mu.` tan.delta. .mu.` tan.delta. (GHz) (.times. 10.sup.12) 15 913
0.10 814 0.14 1621 0.55 1.70 1.55 20 1167 0.03 953 0.24 1882 0.78
1.61 1.88 22 1130 0.11 1168 0.13 2044 1.02 1.88 1.88
Resistivity Versus Magnetic Permeability (at 0.5 GHz) for a
FeTaN/FeNB/Glass Structure
[0095] With reference to FIG. 16, the effective resistivity of the
FeNB/FeTaN film was affected by the thickness of the FeNB layer.
The effective resistivity increased from 438 .mu..OMEGA.m to 489
.mu..OMEGA.m with an increase of the FeNB thickness from 60 nm to
75 nm. High magnetic permeability was exhibited in a resistivity
range from 430 to 460 .mu..OMEGA.m.
Example 4
FeTaN/FeNB/Glass Bi-Layer Film Structure with Low Level of Boron
Content Parameters for RF Magnetron Sputtering
[0096] RF Power=80 to 120 W [0097] Deposition pressure=0.3 to 0.6
pascals (Pa) [0098] Distance between target and substrate=8
centimeters (cm) [0099] Working gas: Ar (99.5%); Reaction gas:
Nitrogen (99.0%) [0100] Target: [0101] Iron (99.5%), 2-inch disk
[0102] 2 pieces of boron (99.5%) chip with 5.times.5 mm.sup.2
[0103] 1 piece for tantalum (99.99%) (5.times.5 mm.sup.2) [0104]
Deposition time: 5 to 30 minutes [0105] Deposition temperature:
ambient [0106] Substrate: Optical glass Magnetic Permeability
Spectrum of in FeTaN/FeNB Film with Low Level of B
Concentration
[0107] With reference to FIG. 17, the FeTaN film had a composition
of Fe.sub.74Ta.sub.6N.sub.20 measured by EDXS, and FeNB had a
composition of Fe.sub.72N.sub.18B.sub.10 FIG. 17 shows .mu.' (solid
lines) and .mu.'' (dashed lines) for varying thicknesses of the
Fe.sub.72N.sub.18B.sub.10 film in nm as indicated on the figure. A
summary of magnetic spectrum measurements for
Fe.sub.74Ta.sub.6N.sub.20/Fe.sub.72N.sub.18B.sub.10 bilayer films
on a glass substrate is provided in Table 7.
TABLE-US-00007 TABLE 7 FeNB thickness in FeTaN 0.5 GHz 1 GHz 1.5
GHz f.sub.r Snoek product (50 nm)/FeNB/Glass (nm) .mu.` tan.delta.
.mu.` tan.delta. .mu.` tan.delta. (GHz) (.times. 10.sup.12) 15 985
0.52 1716 0.18 2850 0.54 1.90 1.87 20 1386 0.18 1602 0.12 2680 0.51
1.87 2.59 22 1416 0.27 1796 0.16 2351 0.47 1.83 2.59
Example 5
FeNB/FeN/FeNB/Glass Tri-Layered Structure Parameters for RF
Magnetron Sputtering
[0108] RF Power=80 to 120 W [0109] Deposition pressure=0.3 to 0.6
pascals (Pa) [0110] Distance between target and substrate=8
centimeters (cm) [0111] Working gas: Ar (99.5%); Reaction gas:
Nitrogen (99.0%) [0112] Target: [0113] Iron (99.5%), 2-inch disk
[0114] 2 pieces of boron (99.5%) chip with 5.times.5 mm.sup.2
[0115] 1 piece for tantalum (99.99%) (5.times.5 mm.sup.2) [0116]
Deposition time: 5 to 30 minutes [0117] Deposition temperature:
ambient [0118] Substrate: Optical glass
Resistivity of FeNB/FeN/FeNB Structure
[0119] With reference to FIG. 18, the effective resistivity of a
tri-layer film was measured by the V.D. Pauw method with four
probes. The resistivity increased from 291 to 485 .mu..OMEGA.m for
the total thickness of the tri-layer film from 55 to 125 nm.
Details of film thickness and resistivity for
Fe.sub.72N.sub.18B.sub.10/Fe.sub.82N.sub.18/Fe.sub.72N.sub.18B.sub.10
tri-layer films are provided in Table 8.
TABLE-US-00008 TABLE 8 Top layer Middle layer Bottom layer Total
thickness Resistivity FeNB (nm) FeN (nm) FeNB (nm) (nm)
(.mu..OMEGA.m) 15 20 20 55 291 15 30 30 75 351 15 35 35 85 386 20
50 25 95 455 25 50 50 125 485
Magnetic Permeability for FeNB/FeN/FeNB/Glass Structure
[0120] With reference to FIG. 19, the thickness of 50 nm for the
FeN middle layer was fixed and the thicknesses of the top and
bottom FeNB layer were changed. FIG. 19 shows .mu.'' (solid lines)
and .mu.'' (dashed lines) for varying thicknesses of the top and
bottom FeNB films in nm as indicated on the figure. The increased
magnetic permeability (at 0.5 GHz) and Snoek product were 995 and
2.16 for the FeNB(20 nm)/FeN(50 nm)/FeNB(25 nm) structures,
respectively. Magnetic permeability of the FeNB(20 nm)/FeN(50
nm)/FeNB(25 nm) structure was about 50% higher than the FeNB(25
nm)/FeTaN(50 nm)/FeNB(25 nm) structure. A summary of magnetic
spectrum measurements for
Fe.sub.72N.sub.18B.sub.10/Fe.sub.82N.sub.18/Fe.sub.72N.sub.18B.sub.10
tri-layer films is shown in Table 9. The last row includes details
of the reference sample.
TABLE-US-00009 TABLE 9 Top layer FeNB Middle layer Bottom layer
.mu.` at 0.5 GHz .mu.` at 1.0 GHz .mu.` at 1.5 GHz f.sub.r Snoek
product (nm) FeN (nm) FeNB (nm) .mu.` tan.delta. .mu.` tan.delta.
.mu.` tan.delta. (GHz) (.times. 10.sup.12) 20 50 25 995 0.28 1339
0.27 1478 0.58 2.17 2.16 25 50 25 773 0.33 1096 0.25 1444 0.53 2.21
1.71 25 50 50 530 0.43 559 0.31 692 0.46 2.25 1.19 25 50 (FeTaN) 25
382 0.41 457 0.16 464 0.96 1.79 0.68
Example 6
FeNB/FeTaN/FeNB/Glass Tri-Layered Structure Parameters for RF
Magnetron Sputtering
[0121] RF Power=80 to 120 W [0122] Deposition pressure=0.3 to 0.6
pascals (Pa) [0123] Distance between target and substrate=8
centimeters (cm) [0124] Working gas: Ar (99.5%); Reaction gas:
Nitrogen (99.0%) [0125] Target: [0126] Iron (99.5%), 2-inch disk
[0127] 2 pieces of boron (99.5%) chip with 2.5.times.2.5 mm.sup.2
[0128] 1 piece for tantalum (99.99%) (5.times.5 mm.sup.2) [0129]
Deposition time: 5 to 30 minutes [0130] Deposition temperature:
ambient [0131] Substrate: Optical glass
Resistivity of FeNB/FeTaN/FeNB Structure
[0132] With reference to FIG. 20, the effective resistivity
increased with an increase of total thickness of the tri-layer
FeNB/FeTaN/FeNB film. The effective resistivity increased from 391
to 496 .mu..OMEGA.m for the total thickness from 70 to 125 nm. The
effective resistivity of the FeNB/FeTaN/FeNB film was about 5%
higher than that of the FeNB/FeN/FeNB film. Details of film
thickness and resistivity for the
Fe.sub.72N.sub.18B.sub.10/Fe.sub.83Ta.sub.6N.sub.11/Fe.sub.72N.sub.18B.su-
b.10 tri-layer structure are provided in Table 10.
TABLE-US-00010 TABLE 10 Top layer Middle layer Bottom layer Total
thickness Resistivity FeNB (nm) FeTaN (nm) FeNB (nm) (nm)
(.mu..OMEGA.m) 20 25 25 70 396 20 50 25 95 437 25 50 25 100 468 25
50 50 125 496
Magnetic Permeability for FeNB/FeTaN/FeNB/Glass Structure
[0133] With reference to FIG. 21, the thickness of the FeNB and
FeTaN layer varied from 20 nm to 50 nm. FIG. 21 shows .mu.' (solid
lines) and .mu.'' (dashed lines) for varying thicknesses of the
top, middle, and bottom FeNB films in nm as indicated on the
figure. The increased magnetic permeability (at 0.5 GHz) and Snoek
product were 545 and 1.14 for the FeNB(20 nm)/FeTaN(25 nm)/FeNB(25
nm) structures, respectively. The magnetic permeability of the
FeNB(20 nm)/FeTaN(25 nm)/FeNB(25 nm) structure was about 45% lower
than that of the FeNB(20 nm)/FeN(50 nm)/FeNB(25 nm) structure
(i.e., 995). A summary of magnetic spectrum measurements for
Fe.sub.72N.sub.18B.sub.10/Fe.sub.72Ta.sub.18N.sub.10/Fe.sub.72N.sub.18B.s-
ub.10 tri-layer films is provided in Table 11. The last row
includes details of the reference sample.
TABLE-US-00011 TABLE 11 Top layer FeNB Middle layer Bottom layer
.mu.` at 0.5 GHz .mu.` at 1.0 GHz .mu.` at 1.5 GHz f.sub.r Snoek
product (nm) FeN (nm) FeNB (nm) .mu.` tan.delta. .mu.` tan.delta.
.mu.` tan.delta. (GHz) (.times. 10.sup.12) 20 25 25 545 0.31 504
0.11 712 0.35 2.09 1.14 25 25 25 511 0.41 599 0.07 747 0.49 2.08
1.06 20 50 25 319 0.62 429 0.23 425 0.83 1.86 0.59 25 50 25 382
0.41 457 0.16 464 0.96 1.79 0.68 25 50 50 292 0.02 397 0.04 382
0.91 1.76 0.52 20* 50 (FeN) 25 995 0.28 1366 0.27 1478 0.58 2.17
2.16 *Reference example
Example 7
FeN, FeNB, FeTaN/TaN/Glass Bi-Layered Structure Parameters for RF
Magnetron Sputtering
[0134] RF Power=80 to 120 W [0135] Deposition pressure=0.3 to 0.6
pascals (Pa) [0136] Distance between target and substrate=8
centimeters (cm) [0137] Working gas: Ar (99.5%); Reaction gas:
Nitrogen (99.0%) [0138] Target: [0139] Iron (99.5%), 2-inch disk
[0140] 2 pieces of boron (99.5%) chip with 2.5.times.2.5 mm.sup.2
[0141] 1 piece for tantalum (99.99%) (5.times.5 mm.sup.2) [0142]
Deposition time: 5 to 30 minutes [0143] Deposition temperature:
ambient [0144] Substrate: Optical glass
Magnetic Permeability for FeN/TaN/Glass Structure
[0145] With reference to FIG. 22, a non-magnetic TaN film was a
seed layer for the deposition of a 50 nm FeN film. FIG. 22 shows
.mu.' (solid lines) and .mu.'' (dashed lines) for varying
thicknesses of the TaN films in nm as indicated on the figure. The
thickness of non-magnetic TaN seed layer varied from 15 to 30 nm.
The increased magnetic permeability and Snoek product were 716 at
0.5 GHz and 1.53 when the thickness of TaN layer was about 20 nm.
The magnetic permeability of the FeN(50 nm)/TaN(20 nm)/Glass
structure was about 20% lower than that of the FeN(50 nm)/FeTaN(10
nm)/Glass structure (i.e., 892). The magnetic seed layer resulted
in frequency permeability higher than that of the non-magnetic seed
layer (e.g., TaN). A summary of magnetic spectrum measurements for
Fe.sub.82N.sub.18/Ta.sub.88N.sub.12 bilayer films is provided in
Table 12. The last row includes details of the reference
sample.
TABLE-US-00012 TABLE 12 Top layer Bottom layer .mu.` at 0.5 GHz
.mu.` at 1.0 GHz .mu.` at 1.5 GHz f.sub.r Snoek product FeN (nm)
TaN (nm) .mu.` tan.delta. .mu.` tan.delta. .mu.` tan.delta. (GHz)
(.times. 10.sup.12) 50 15 507 0.22 558 0.05 1220 0.17 2.12 1.07 50
20 716 0.20 901 0.14 1939 0.17 2.13 1.53 50 25 646 0.34 778 0.05
1494 0.15 2.16 1.39 50 30 478 0.04 786 0.01 1648 0.09 2.09 1.00 50*
20 (FeTaN) 892 0.08 1145 0.13 1709 0.89 1.76 1.57 *Reference
example
Magnetic Permeability for FeNB/TaN/Glass Structure
[0146] With reference to FIG. 23, the thickness of non-magnetic TaN
seed layer varied from 10 nm to 25 nm. FIG. 23 shows .mu.' (solid
lines) and .mu.'' (dashed lines) for varying thicknesses of the TaN
films in nm as indicated on the figure. The increased magnetic
permeability and Snoek product were 937 at 0.5 GHz and 1.76 when
the thickness of TaN seed layer was about 20 nm. The magnetic
permeability of the FeN(50 nm)/TaN(20 nm)/Glass structure was about
32% lower than that of the FeNB(50 nm)/FeTaN(20 nm)/Glass structure
(i.e., 1386). The magnetic permeability of the FeNB(50 nm)/TaN(20
nm)/Glass structure was about 24% higher than that of the FeN(50
nm)/TaN(20 nm)/Glass structure (i.e., 716). The magnetic seed layer
demonstrated higher permeability than that of the non-magnetic seed
layer. A summary of magnetic spectrum measurements for
Fe.sub.72N.sub.18B.sub.10/Ta.sub.88N.sub.12 bilayer films is
provided in Table 12. The last two rows include details of the
reference samples.
TABLE-US-00013 TABLE 12 Top layer Bottom layer .mu.` at 0.5 GHz
.mu.` at 1.0 GHz .mu.` at 1.5 GHz f.sub.r Snoek product FeN (nm)
TaN (nm) .mu.` tan.delta. .mu.` tan.delta. .mu.` tan.delta. (GHz)
(.times. 10.sup.12) 10 10 821 0.58 941 0.09 1598 0.20 2.01 1.65 15
15 866 0.11 1043 0.12 2004 0.33 1.87 1.23 20 20 937 0.17 1065 0.01
1827 0.32 1.88 1.76 25 25 708 0.43 862 0.13 1378 0.16 2.06 1.46 50*
20 (FeTaN) 1386 0.15 1581 0.13 2740 0.17 1.87 2.59 50 (FeN)* 20 716
0.20 901 0.14 1939 0.17 2.13 1.53 *Reference example
Magnetic Permeability for FeTaN/TaN/Glass Structure
[0147] With reference to FIG. 24, the thickness of magnetic top
FeTaN layer was fixed at 50 nm. FIG. 24 shows .mu.' (solid lines)
and .mu.'' (dashed lines) for varying thicknesses of the TaN films
in nm as indicated on the figure. The thickness of nan-magnetic TaN
layer varied from 10 nm to 25 nm. The increased magnetic
permeability and Snoek product was 832 at 0.5 GHz and 1.63 when the
thickness of TaN layer was about 20 nm. The magnetic permeability
of the FeTaN(50 nm)/TaN(20 nm)/Glass structure was about 38% lower
than of the FeTaN(50 nm)/FeNB(20 nm)/Glass structure (i.e., 1386).
The magnetic permeability of the FeTaN(50 nm)/TaN(20 nm)/Glass
structure was about 14% higher than that of the FeN(50 nm)/TaN(20
nm)/Glass structure (i.e., 716). A summary of magnetic spectrum
measurements for Fe.sub.83Ta.sub.6N.sub.11/Ta.sub.88N.sub.12
bilayer films is provided in Table 13. The last row includes
details of the reference sample. The last two rows include details
of the reference samples.
TABLE-US-00014 TABLE 13 Top layer Bottom layer .mu.` at 0.5 GHz
.mu.` at 1.0 GHz .mu.` at 1.5 GHz f.sub.r Snoek product FeN (nm)
TaN (nm) .mu.` tan.delta. .mu.` tan.delta. .mu.` tan.delta. (GHz)
(.times. 10.sup.12) 10 10 669 0.68 911 0.18 1538 0.29 2.03 1.36 15
15 714 0.49 1029 0.10 1814 0.25 1.99 1.42 20 20 832 0.38 975 0.15
1697 0.29 1.96 1.63 25 25 807 0.30 906 0.28 984 0.89 1.83 1.48 50
20 (FeNB) 1386 0.20 1581 0.14 2740 0.17 1.87 2.59 20 (FeN) 20 716
0.17 901 0.01 1939 0.32 2.13 1.53
Example 8
Magnetic Permeability and Snoek Product Diagram of the FeN-Based or
FeTaN-Based Multi-Layered Structure
[0148] Magnetic permeability (at 0.5 GHz) and Snoek product diagram
of FeN-based structure
[0149] With reference to FIG. 25, the magnetic permeability diagram
at 0.5 GHz of the FeN-based film are provided for the single layer
film, double layers film and triple layer structure. The increased
magnetic permeability about 1800 was observed in the double-layered
film with the 20.about.25 nm FeNB seed layer.
[0150] With reference to FIG. 26, the Snoek product diagram of the
FeN-based film are provided for the single layer film, double
layers film and triple layers film. The increased Snoek product
about 2.0-3.5.times.10'.sup.2 was observed in the double-layered
film with the 20.about.25 nm FeNB seed layer.
Magnetic Permeability (at 0.5 GHz) and Snoek Product Diagram of
FeTaN-Based Structure
[0151] With reference to FIG. 27, the magnetic permeability diagram
of the FeTaN-based film is provided for the single layer film,
double layers film and triple layers film. The increased magnetic
permeability about 1300 was observed in the double-layered film
with the 20.about.25 nm FeNB seed layer.
[0152] With reference to FIG. 28, the Snoek product diagram of the
FeTaN-based film are provided for the single layer film, bi-layer
film and triple-layer structure. The increased Snoek product about
2.0.times.10.sup.12 was observed in the double-layered film with
the 20.about.25 nm FeTaN or FeNB seed layer.
[0153] Set forth below are some aspects of the multilayer magnetic
film, articles comprising the same, and methods of making the
same.
[0154] Aspect 1: A multilayer magnetic film, comprising: a
substrate; a first magnetic layer disposed on the substrate,
wherein the first magnetic layer comprises
Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is
Si, Ta, Zr, Ti, Co, or a combination thereof; and a second magnetic
layer disposed on the first magnetic layer, wherein the second
magnetic layer comprises Fe.sub.(50-90)N.sub.(10-50)or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30); wherein the multilayer
magnetic film has, over a frequency range of 50 MHz to 10 GHz,
preferably over a frequency range of 100 MHz to 5 GHz, more
preferably over a frequency range of 1 to 5 GHz, a magnetic
permeability of greater than or equal to 1800, preferably greater
than 2000, more preferably greater than 3000, or 1800 to 5000 over
a selected frequency band in the frequency range, preferably over a
frequency band of 1 to 10 GHz; a magnetic loss tangent of less than
or equal to 0.3, preferably less than or equal to 0.1, or 0.01 to
0.3 over a selected frequency band in the frequency range,
preferably over a frequency band of 1 to 10 GHz; and a cutoff
frequency of greater than or equal to 1 GHz, greater than or equal
to 1 GHz, or greater than or equal to 2 GHz, preferably greater
than or equal to 5 GHz, or 1 to 8 GHz.
[0155] Aspect 2: The multilayer magnetic film of Aspect 1, wherein
the substrate comprises a glass, polymer, or ceramic, preferably a
ceramic.
[0156] Aspect 3: The multilayer magnetic film of any one or more of
the preceding Aspects, wherein the first magnetic layer has a
thickness of 10 to 100 nanometers, and the second magnetic layer
has a thickness of 10 to 400 nanometers.
[0157] Aspect 4: The multilayer magnetic film of any one or more of
the preceding Aspects, further comprising: an additional first
layer comprising Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20) disposed
on the second layer; and an additional second magnetic layer
comprising Fe.sub.(50-90)N.sub.(10-50) or
Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30) disposed on the additional
first magnetic layer.
[0158] Aspect 5: The multilayer magnetic film of Aspect 4,
comprising further additional first and second magnetic layers
disposed on the additional second magnetic layer in
alternation.
[0159] Aspect 6: The multilayer magnetic film of any one or more of
Aspects 4 to 5, wherein the first magnetic layer and the second
magnetic layer have a total thickness of 20 to 500 nanometers.
[0160] Aspect 7: An article comprising the multilayer film of any
one or more of Aspects 1 to 6, preferably wherein the article is a
filter, transformer, inductor, antenna, electronic integrated
circuit chip, or electromagnetic shielding device.
[0161] Aspect 8: The article of Aspect 7, wherein the article is a
component of an electronic device, preferably a mobile phone, a
desktop computer, a laptop computer, a notebook computer, a
wireless or LAN network, a power supply, an amplifier, a
voltage-controlled oscillator, a shrink power converter, more
preferably an integrated electronic device.
[0162] Aspect 9: A method of forming the multilayer magnetic film
of any one or more of Aspects 1 to 6, the method comprising:
depositing the first magnetic layer onto a side of the substrate;
and depositing the second magnetic layer onto a side of the first
magnetic layer opposite to the substrate.
[0163] Aspect 10: The method of Aspect 9, wherein the depositing
comprises rf/DC sputtering, electron beam deposition, or a
combination thereof.
[0164] Aspect 11: The method of Aspect 10, further comprising
depositing an additional first layer on a side of the second layer
opposite the first layer.
[0165] Aspect 12: The method of Aspect 11, further comprising
depositing an additional second layer on a side of the additional
first layer opposite the second layer.
[0166] Aspect 13: The method of any one or more of Aspects 9 to 12,
comprising adjusting the thickness of each layer to adjust the
magnetic loss tangent of the multilayer magnetic film, the magnetic
anisotropy of the magnetic multilayer film, or both.
[0167] Aspect 14: A multilayer magnetic film made by the method of
any one or more of Aspects 9 to 13.
[0168] "Film" as used herein includes planar layers, sheets, and
the like as well as other three-dimensional non-planar forms. A
layer can further be macroscopically continuous or non-continuous.
As used herein, "a," "an," "the," and "at least one" do not denote
a limitation of quantity, and are intended to cover both the
singular and plural, unless the context clearly indicates
otherwise. For example, "an element" has the same meaning as "at
least one element," unless the context clearly indicates otherwise.
"Or" means "and/or." Ranges disclosed herein are inclusive of the
recited endpoint and are independently combinable. "Combination" is
inclusive of blends, mixtures, alloys, reaction products, and the
like. Also, "combination thereof" means that the list is inclusive
of each element individually, as well as combinations of two or
more elements of the list, and combinations of at least one element
of the list with like elements not named. The terms "first,"
"second," and so forth, herein do not denote any order, quantity,
or importance, but rather are used to distinguish one element from
another. While certain combinations of features have been described
herein, it will be appreciated that these certain combinations are
for illustration purposes only and that any combination of any of
these features can be employed, explicitly or equivalently, either
individually or in combination with any other of the features
disclosed herein, in any combination, and all in accordance with an
embodiment. Any and all such combinations are contemplated herein
and are considered within the scope of the disclosure. Unless
otherwise stated, the test standards are the latest as of the date
of filing.
[0169] The endpoints of all ranges directed to the same component
or property are inclusive of the endpoints, are independently
combinable, and include all intermediate points and ranges. For
example, ranges of "up to 25, or 5 to 20" is inclusive of the
endpoints and all intermediate values of the ranges of "5 to 25"
such as 10 to 23, etc.
[0170] Unless defined otherwise, technical and scientific terms
used herein have the same meaning as is commonly understood by one
of skill in the art to which this invention belongs. All cited
patents, patent applications, and other references are incorporated
herein by reference in their entirety. However, if a term in the
present application contradicts or conflicts with a term in the
incorporated reference, the term from the present application takes
precedence over the conflicting term from the incorporated
reference.
[0171] While the disclosure has been described with reference to
exemplary embodiments, it will be understood by those skilled in
the art that various changes can be made, and equivalents can be
substituted for elements thereof without departing from the scope
of this disclosure. In addition, many modifications can be made to
adapt a particular situation or material to the teachings without
departing from the essential scope thereof. Therefore, it is
intended that the disclosure not be limited to the particular
embodiment disclosed as the best or only mode contemplated for
carrying out this disclosure, but that the disclosure will include
all embodiments falling within the scope of the appended claims.
Also, in the drawings and the description, there have been
disclosed exemplary embodiments and, although specific terms can
have been employed, they are unless otherwise stated used in a
generic and descriptive sense only and not for purposes of
limitation.
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