U.S. patent application number 16/654482 was filed with the patent office on 2020-04-23 for substrate processing apparatus, and substrate processing method.
The applicant listed for this patent is SCREEN Holdings Co., Ltd.. Invention is credited to Yasunori KANEMATSU, Hitoshi NAKAI, Manabu OKUTANI.
Application Number | 20200126822 16/654482 |
Document ID | / |
Family ID | 70280963 |
Filed Date | 2020-04-23 |
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United States Patent
Application |
20200126822 |
Kind Code |
A1 |
KANEMATSU; Yasunori ; et
al. |
April 23, 2020 |
SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
Abstract
A substrate processing apparatus processes a substrate having an
upper side and a rear side. The substrate processing apparatus
includes a substrate holder, a filler feeder, and a first cleaning
liquid feeder. The substrate holder rotates the substrate while
holding a central portion of the rear side of the substrate. The
filler feeder feeds filler to the upper side of the substrate held
by the substrate holder. The first cleaning liquid feeder feeds a
cleaning liquid to the rear side of the substrate held by the
substrate holder. The first cleaning liquid feeder feeds the
cleaning liquid to an area, held by the substrate holder, of the
rear side of the substrate.
Inventors: |
KANEMATSU; Yasunori;
(Kyoto-shi, JP) ; NAKAI; Hitoshi; (Kyoto-shi,
JP) ; OKUTANI; Manabu; (Kyoto-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SCREEN Holdings Co., Ltd. |
Kyoto |
|
JP |
|
|
Family ID: |
70280963 |
Appl. No.: |
16/654482 |
Filed: |
October 16, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B08B 3/041 20130101;
G03F 7/00 20130101; H01L 21/68721 20130101; H01L 21/67028 20130101;
H01L 21/68792 20130101; H01L 21/0209 20130101; H01L 21/02087
20130101; H01L 21/67051 20130101; H01L 21/6838 20130101 |
International
Class: |
H01L 21/67 20060101
H01L021/67; H01L 21/02 20060101 H01L021/02; B08B 3/04 20060101
B08B003/04 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 17, 2018 |
JP |
2018-196015 |
Claims
1. A substrate processing apparatus, processing a substrate having
an upper side and a rear side and comprising a substrate holder
configured to rotate the substrate while holding a central portion
of the rear side of the substrate, a filler feeder configured to
feed filler to the upper side of the substrate held by the
substrate holder, and a first cleaning liquid feeder configured to
feed a cleaning liquid to the rear side of the substrate held by
the substrate holder, wherein the first cleaning liquid feeder
feeds the cleaning liquid toward an area, held by the substrate
holder, of the rear side of the substrate.
2. The substrate processing apparatus according to claim 1, wherein
the substrate holder allows the substrate holder to stick to the
central portion of the rear side of the substrate.
3. The substrate processing apparatus according to claim 1, wherein
when feeding the cleaning liquid toward the area, held by the
substrate holder, of the rear side of the substrate, the first
cleaning liquid feeder feeds the cleaning liquid such that the
cleaning liquid is spread on the rear side of the substrate and
approaches the area, held by the substrate holder, of the rear side
of the substrate without coming into contact with the area.
4. The substrate processing apparatus according to claim 1, wherein
the first cleaning liquid feeder has at least one nozzle that
ejects the cleaning liquid.
5. The substrate processing apparatus according to claim 4, wherein
the at least one nozzle is directed toward the substrate with a
segment of a travelling direction projected on the rear side of the
substrate being parallel to a perpendicular direction to a
direction from a center of the substrate toward a reaching point,
the travelling direction being a travelling direction of the
cleaning liquid just before the cleaning liquid reaches the
reaching point on the rear side of the substrate.
6. The substrate processing apparatus according to claim 4, wherein
the substrate processing apparatus includes, as the at least one
nozzle, a first nozzle and a second nozzle, a distance from the
center of the substrate toward a reaching point on the substrate to
which the first nozzle ejects a cleaning liquid is different from a
distance from the center of the substrate toward a reaching point
on the substrate to which the second nozzle ejects a cleaning
liquid.
7. The substrate processing apparatus according to claim 6, wherein
the cleaning liquid ejected from the first nozzle is different from
the cleaning liquid ejected from the second nozzle.
8. The substrate processing apparatus according to claim 4, further
comprising a nozzle mover configured to move the at least one
nozzle in a horizontal direction.
9. The substrate processing apparatus according to claim 1, further
comprising a second cleaning liquid feeder configured to feed a
cleaning liquid for cleaning an edge of the substrate.
10. The substrate processing apparatus according to claim 9,
wherein a distance from the center of the substrate to a point on
the substrate to which the cleaning liquid from the second cleaning
liquid feeder is fed is longer than a distance from the center of
the substrate to a point on the substrate to which the cleaning
liquid from the first cleaning liquid feeder is fed.
11. The substrate processing apparatus according to claim 1,
wherein a component contained in the cleaning liquid is selected
from the group consisting of isopropyl alcohol, propylene glycol
monomethyl ether acetate, 1-ethoxy-2-propanol, and acetone.
12. The substrate processing apparatus according to claim 1,
further comprising an inert gas feeder configured to feed an inert
gas to the rear side of the substrate.
13. A substrate processing method, processing a substrate having an
upper side and a rear side and comprising rotating the substrate
while holding a central portion of the rear side of the substrate,
feeding filler to the upper side of the substrate, and feeding a
cleaning liquid to the rear side of the substrate after the feeding
the filler, wherein the feeding the cleaning liquid includes
feeding the cleaning liquid toward an area held of the rear side of
the substrate.
14. The substrate processing method according to claim 13, wherein
the feeding the cleaning liquid includes feeding the cleaning
liquid to the rear side of the substrate such that the cleaning
liquid is spread on the rear side of the substrate and approaches
the area held of the rear side of the substrate without coming into
contact with the area.
15. The substrate processing method according to claim 13, wherein
in the feeding the cleaning liquid, a segment of a travelling
direction projected on the rear side of the substrate is parallel
to a perpendicular direction to a direction from a center of the
substrate toward a reaching point, the travelling direction being a
travelling direction of the cleaning liquid just before the
cleaning liquid reaches the reaching point on the rear side of the
substrate.
16. The substrate processing method according to claim 13, wherein
the feeding the filler includes ejecting the filler to the upper
side of the substrate, rotating the substrate at a first rotational
speed after the filler is ejected, rotating the substrate at a
second rotational speed lower than the first rotational speed after
the substrate is rotated at the first rotational speed, and
rotating the substrate at a third rotational speed higher than the
second rotational speed after the substrate is rotated at the
second rotational speed.
17. The substrate processing method according to claim 16, wherein
the feeding the cleaning liquid includes feeding, by a first
cleaning liquid feeder, the cleaning liquid toward the area held of
the rear side of the substrate, feeding, by a second cleaning
liquid feeder, a cleaning liquid for cleaning an edge of the
substrate, rotating the substrate at a fourth rotational speed
lower than the third rotational speed while the cleaning liquid
from the first cleaning liquid feeder is being fed, and rotating
the substrate at a fifth rotational speed higher than the fourth
rotational speed while the cleaning liquid from the second cleaning
liquid feeder is being fed.
18. The substrate processing method according to claim 13, further
comprising feeding an inert gas to the rear side of the substrate
from a point in time before the filler is fed to a point in time
when the feeding the cleaning liquid ends.
19. The substrate processing method according to claim 18, wherein
in the feeding the inert gas, a flow rate of the inert gas in the
feeding the filler is lower than a flow rate of the inert gas in
the feeding the cleaning liquid.
20. The substrate processing method according to claim 13, wherein
the feeding the cleaning liquid includes feeding the cleaning
liquid toward the area held of the rear side of the substrate, and
subsequently feeding a cleaning liquid to an edge of the substrate.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims priority under 35 U.S.C.
.sctn. 119 to Japanese Patent Application No. 2018-196015, filed on
Oct. 17, 2018. The contents of this application are incorporated
herein by reference in their entirety.
TECHNICAL FIELD
[0002] The subject matter of the present application relates to a
substrate processing apparatus, and a substrate processing
method.
BACKGROUND
[0003] There is a known substrate processing apparatus configured
to perform processing of substrates employed for electronic devices
such as semiconductor devices and liquid crystal displays. Such a
substrate processing is performed in manufacturing processes of
electronic devices which include repeating processes such as film
formation and etching on a substrate surface to form fine patterns
thereon. Here, the substrate surface needs to be kept clean in
order to successfully perform microfabrication on the substrate
surface. This typically requires cleaning treatment of the
substrate surface with a rinse liquid. This raises the need to
remove the rinse liquid adhering to the substrate surface to dry
the substrate after the end of the cleaning treatment.
[0004] One of important issues in the drying treatment is drying
the substrate without collapsing the patterns formed on the
substrate surface. Sublimation drying technology is attracting
attention as a method for solving the issue. In the technology, a
pattern is formed by feeding a developer solution to a photoresist
film after exposure processing to dissolve the photoresist film
applied to a substrate surface. The developer solution is then
removed by feeding a rinse liquid to the substrate surface. At the
end of rinsing, polymer soluble in the rinse liquid is fed to the
substrate with the rinse liquid covering the substrate surface, and
subsequently the substrate on which a polymer solution has been
formed is dried. For example, recesses in the patterns (gaps
between protrusions of photoresist film) are filled with polymer.
The polymer is subsequently removed by selective plasma ashing.
SUMMARY
[0005] A substrate processing apparatus according to an aspect of
the subject matter of the present application performs processing
of a substrate having an upper side and a rear side. The substrate
processing apparatus includes a substrate holder that rotates the
substrate while holding a central portion of the rear side of the
substrate, a filler feeder that feeds filler to the upper side of
the substrate held by the substrate holder, and a first cleaning
liquid feeder that feeds a cleaning liquid to the rear side of the
substrate held by the substrate holder. The first cleaning liquid
feeder feeds the cleaning liquid toward an area, held by the
substrate holder, of the rear side of the substrate.
[0006] In the substrate processing apparatus according to an
embodiment, the substrate holder allows the substrate holder to
stick to (or adhere to) the central portion of the rear side of the
substrate.
[0007] In the substrate processing apparatus according to an
embodiment, when feeding the cleaning liquid toward the area, held
by the substrate holder, of the rear side of the substrate, the
first cleaning liquid feeder feeds the cleaning liquid such that
the cleaning liquid is spread on the rear side of the substrate and
approaches the area, held by the substrate holder, of the rear side
of the substrate without coming into contact with the area.
[0008] In the substrate processing apparatus according to an
embodiment, the first cleaning liquid feeder has at least one
nozzle that ejects the cleaning liquid.
[0009] In the substrate processing apparatus according to an
embodiment, the at least one nozzle is directed toward the
substrate with a segment of a travelling direction projected on the
rear side of the substrate being parallel to a perpendicular
direction to a direction from a center of the substrate toward a
reaching point. Here, the travelling direction is a travelling
direction of the cleaning liquid just before the cleaning liquid
reaches the reaching point on the rear side of the substrate.
[0010] In the substrate processing apparatus according to an
embodiment, the substrate processing apparatus includes, as the at
least one nozzle, a first nozzle and a second nozzle. Here, a
distance from the center of the substrate toward a reaching point
on the substrate to which the first nozzle ejects a cleaning liquid
is different from a distance from the center of the substrate
toward a reaching point on the substrate to which the second nozzle
ejects a cleaning liquid.
[0011] In the substrate processing apparatus according to an
embodiment, the cleaning liquid ejected from the first nozzle is
different from the cleaning liquid ejected from the second
nozzle.
[0012] In the substrate processing apparatus according to an
embodiment, the substrate processing apparatus further includes a
nozzle mover that moves the at least one nozzle in a horizontal
direction.
[0013] In the substrate processing apparatus according to an
embodiment, the substrate processing apparatus further includes a
second cleaning liquid feeder that feeds a cleaning liquid for
cleaning an edge of the substrate.
[0014] In the substrate processing apparatus according to an
embodiment, a distance from the center of the substrate to a point
on the substrate to which the cleaning liquid from the second
cleaning liquid feeder is fed is longer than a distance from the
center of the substrate to a point on the substrate to which the
cleaning liquid from the first cleaning liquid feeder is fed.
[0015] In the substrate processing apparatus according to an
embodiment, a component contained in the cleaning liquid is
selected from the group consisting of isopropyl alcohol, propylene
glycol monomethyl ether acetate, 1-ethoxy-2-propanol, and
acetone.
[0016] In the substrate processing apparatus according to an
embodiment, the substrate processing apparatus further includes an
inert gas feeder that feeds an inert gas to the rear side of the
substrate.
[0017] A substrate processing method according to another aspect of
the subject matter of the present application is a method of
performing processing of a substrate having an upper side and a
rear side. The substrate processing method includes rotating the
substrate while holding a central portion of the rear side of the
substrate, feeding filler to the upper side of the substrate, and
feeding a cleaning liquid to the rear side of the substrate after
the feeding the filler. The feeding the cleaning liquid includes
feeding the cleaning liquid toward an area held of the rear side of
the substrate.
[0018] In the substrate processing method according to an
embodiment, the feeding the cleaning liquid includes feeding the
cleaning liquid to the rear side of the substrate such that the
cleaning liquid is spread on the rear side of the substrate and
approaches the area held of the rear side of the substrate without
coming into contact with the area.
[0019] In the substrate processing method according to an
embodiment, in the feeding the cleaning liquid, a segment of a
travelling direction projected on the rear side of the substrate is
parallel to a perpendicular direction to a direction from a center
of the substrate toward a reaching point. Here, the travelling
direction is a travelling direction of the cleaning liquid just
before the cleaning liquid reaches the reaching point on the rear
side of the substrate.
[0020] In the substrate processing method according to an
embodiment, the feeding the filler includes ejecting the filler to
the upper side of the substrate, rotating the substrate at a first
rotational speed after the filler is ejected, rotating the
substrate at a second rotational speed lower than the first
rotational speed after the substrate is rotated at the first
rotational speed, and rotating the substrate at a third rotational
speed higher than the second rotational speed after the substrate
is rotated at the second rotational speed.
[0021] In the substrate processing method according to an
embodiment, the feeding the cleaning liquid includes feeding, by a
first cleaning liquid feeder, the cleaning liquid toward the area
held of the rear side of the substrate, feeding, by a second
cleaning liquid feeder, a cleaning liquid for cleaning an edge of
the substrate, rotating the substrate at a fourth rotational speed
lower than the third rotational speed while the cleaning liquid
from the first cleaning liquid feeder is being fed, and rotating
the substrate at a fifth rotational speed higher than the fourth
rotational speed while the cleaning liquid from the second cleaning
liquid feeder is being fed.
[0022] The substrate processing method according to an embodiment
further includes feeding an inert gas to the rear side of the
substrate from a point in time before the filler is fed to a point
in time when the feeding the cleaning liquid ends.
[0023] In the substrate processing method according to an
embodiment, in the feeding the inert gas, a flow rate of the inert
gas in the feeding the filler is lower than a flow rate of the
inert gas in the feeding the cleaning liquid.
[0024] In the substrate processing method according to an
embodiment, the feeding the cleaning liquid includes feeding the
cleaning liquid toward the area held of the rear side of the
substrate, and subsequently feeding a cleaning liquid to an edge of
the substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] FIG. 1 is a schematic illustration of a substrate processing
apparatus according to the present embodiment.
[0026] FIG. 2 illustrates a substrate in which filler adheres to a
rear side of the substrate.
[0027] FIGS. 3A and 3B are schematic illustrations depicting a
location of a cleaning liquid feeder relative to the substrate, in
the substrate processing apparatus according to the present
embodiment.
[0028] FIGS. 4A to 4D are schematic illustrations depicting the
spreading process of a cleaning liquid fed to the substrate from
the cleaning liquid feeder, in the substrate processing apparatus
according to the present embodiment.
[0029] FIG. 5 is a schematic illustration depicting a reaching
point of the cleaning liquid fed to the substrate from the cleaning
liquid feeder, in the substrate processing apparatus according to
the present embodiment.
[0030] FIGS. 6A and 6B are schematic illustrations depicting a
substrate processing apparatus according to the present
embodiment.
[0031] FIG. 7 is a schematic illustration depicting a substrate
processing apparatus according to the present embodiment.
[0032] FIG. 8 is a schematic illustration depicting a substrate
processing apparatus according to the present embodiment.
[0033] FIGS. 9A to 9C are schematic illustrations depicting
cleaning liquid feeders in a substrate processing apparatus
according to the present embodiment.
[0034] FIGS. 10A and 10B are schematic illustrations depicting a
substrate processing apparatus according to the present
embodiment.
[0035] FIG. 11 is a schematic illustration of a heat treatment unit
in the substrate processing apparatus according to the present
embodiment.
[0036] FIG. 12 is a block diagram of the substrate processing
apparatus according to the present embodiment.
[0037] FIG. 13 is a flow chart illustrating a substrate processing
method according to the present embodiment.
[0038] FIGS. 14A to 14C are schematic illustrations depicting a
substrate processing method according to the present
embodiment.
[0039] FIGS. 15A to 15C are schematic illustrations depicting a
substrate processing method according to the present
embodiment.
[0040] FIG. 16 is a flow chart illustrating a substrate processing
method according to the present embodiment.
[0041] FIG. 17 is a flow chart illustrating a substrate processing
method according to the present embodiment.
[0042] FIG. 18 is a schematic illustration depicting a substrate
processing apparatus according to the present embodiment.
[0043] FIG. 19 is a flow chart illustrating a substrate processing
method according to the present embodiment.
[0044] FIG. 20 is a flow chart illustrating a substrate processing
method according to the present embodiment.
[0045] FIG. 21 is a schematic illustration of a substrate
processing apparatus according to the present embodiment.
[0046] FIGS. 22A to 22D are schematic illustrations depicting a
substrate processing method according to the present
embodiment.
DETAILED DESCRIPTION
[0047] The present embodiment will hereinafter be described with
reference to the accompanying drawings. Note that elements that are
the same or equivalent are labelled with the same reference signs
in the drawings and description thereof is not repeated.
[0048] An embodiment of a substrate processing apparatus 100 will
be described with reference to FIG. 1. FIG. 1 is a schematic
illustration of the substrate processing apparatus 100 according to
the present embodiment.
[0049] The substrate processing apparatus 100 is presented for
performing of a substrate W. Processing of the substrate W to be
performed by the substrate processing apparatus 100 includes at
least one of etching, surface treatment, characterizing, forming
treatment membrane, removing at least part of the membrane, or
cleaning.
[0050] Examples of the substrate W include a semiconductor wafer, a
liquid crystal display substrate, a plasma display substrate, a
field emission display (FED) substrate, an optical disk substrate,
a magnetic substrate, a magneto-optical disk substrate, a photomask
substrate, a ceramic substrate, and a solar cell substrate. For
example, the substrate W has a disk shape. Here, the substrate
processing apparatus 100 will perform processing of the substrate W
one by one.
[0051] The substrate processing apparatus 100 includes a chamber
110, a substrate holder 120, a chemical liquid feeder 130, a rinse
liquid feeder 135, an organic solvent feeder 140, a filler feeder
150, and a first cleaning liquid feeder 160. The chamber 110 houses
the substrate W. The substrate holder 120 holds the substrate W.
The chemical liquid feeder 130 feeds a chemical liquid to the
substrate W. The rinse liquid feeder 135 feeds a rinse liquid to
the substrate W. The organic solvent feeder 140 feeds an organic
solvent to the substrate W. The filler feeder 150 feeds filler to
the substrate W. The first cleaning liquid feeder 160 feeds a
cleaning liquid to the substrate W.
[0052] The chamber 110 has a box shape with an internal space. The
chamber 110 houses the substrate W. Here, the substrate processing
apparatus 100 is classified as a single wafer type and performs
processing of the substrate W one by one. The substrate W is
accordingly housed in the chamber 110 one by one. The substrate W
is housed in the chamber 110 to be processed therein. The chamber
110 houses at least part of each of the substrate holder 120, the
chemical liquid feeder 130, the rinse liquid feeder 135, the
organic solvent feeder 140, the filler feeder 150, and the first
cleaning liquid feeder 160.
[0053] A side wall of the chamber 110 is provided with an entrance
112 that allows the substrate W to be loaded into and unloaded from
the chamber 110 therethrough. The chamber 110 is provided with a
shutter 114 that is opened and shut, thereby opening and shutting
the entrance 112. A shutter opening/closing unit 116 opens and
shuts the shutter 114.
[0054] The substrate holder 120 holds the substrate W. The
substrate holder 120 holds the substrate W in a horizontal posture
such that an upper side of the substrate W faces upward, and a rear
side of the substrate W faces vertically downward. The substrate
holder 120 rotates the substrate W while holding the substrate
W.
[0055] For example, the substrate holder 120 may be a vacuum chuck.
In this case, the substrate holder 120 holds the substrate W in the
horizontal posture by causing a central portion of the rear side
(lower side) of the substrate W to stick (adhere) to an upper
surface of a spin base 121. Here, the rear side of the substrate W
is a surface on which no device is formed.
[0056] The substrate holder 120 includes the spin base 121, a
rotating shaft 122, and an electric motor 123. The rotating shaft
122 is a hollow shaft. The rotating shaft 122 is elongated in a
vertical direction along an axis of rotation AX. The spin base 121
is joined to an upper end of the rotating shaft 122. The substrate
W is placed on the spin base 121 in a state in which the rear side
of the substrate W is in contact with the spin base 121.
[0057] The spin base 121 has a disk shape and holds the substrate W
in the horizontal posture. The spin base 121 has a disk portion
121A, and a cylindrical portion 121B. The substrate W is placed on
the disk portion 121A in a state in which the rear side of the
substrate W is in contact with the disk portion 121A. The disk
portion 121A has a disk shape and is kept in a horizontal position.
The upper end of the rotating shaft 122 is fit into the cylindrical
portion 121B. A diameter of an upper surface of the disk portion
121A is smaller than a diameter of the substrate W.
[0058] The rotating shaft 122 is elongated downward from a central
portion of the spin base 121. The electric motor 123 provides
torque to the rotating shaft 122. The electric motor 123 rotates
the rotating shaft 122 in a rotational direction, thereby rotating
the substrate W and the spin base 121 around the axis of rotation
AX.
[0059] The substrate holder 120 further includes a suction unit
127. The suction unit 127 includes a vacuum pump. The suction unit
127 sucks up the substrate W placed on the upper surface of the
spin base 121, and thereby the substrate W is held by the spin base
121. A suction route 125 is threaded through the spin base 121 and
the rotating shaft 122. The suction route 125 has a suction port
124 exposed from a center of the upper surface of the spin base
121. The suction route 125 is coupled to a suction tube 126. A
suction tube 126 is coupled to the suction unit 127. A valve 128
for opening and shutting the suction tube 126 is disposed in the
suction tube 126.
[0060] As stated above, the substrate holder 120 may be the vacuum
chuck. The substrate holder 120 is however not limited to the
vacuum chuck. The substrate holder 120 may have a voluntary
mechanism that holds the substrate W from the rear side.
Alternatively, the substrate holder 120 may be combined with a
clamping chuck that causes chuck pins to come into contact with the
edge of the substrate W.
[0061] The chemical liquid feeder 130 feeds the chemical liquid to
the upper side of the substrate W. The chemical liquid enables
processing of the substrate W.
[0062] Examples of processing to be performed by the chemical
liquid include etching, surface treatment, characterizing, forming
treatment membrane, removing at least part of the membrane,
cleaning, and at least one of them. Examples of the chemical liquid
include hydrofluoric acid (HF). Examples of a liquid contained in
the chemical liquid may include sulfuric acid, acetic acid, nitric
acid, hydrochloric acid, citric acid, buffered hydrofluoric acid
(BHF), dilute hydrofluoric acid (DHF), ammonia water, dilute
ammonia water, hydrogen peroxide solution, organic alkali (examples
thereof include tetramethylammonium hydroxide (TMAH)), surfactant,
corrosion inhibitor, and at least one of them. The chemical liquid
may also be a mixture obtained by mixing the above-described
liquids. Examples of the mixture include a sulfuric acid-hydrogen
peroxide mixture (SPM), ammonium hydrogen-peroxide mixture (SC1),
and a hydrochloric acid hydrogen peroxide mixture (SC2).
[0063] The chemical liquid feeder 130 includes a nozzle 131, a feed
pipe 132, and a valve 133. The nozzle 131 faces the upper side of
the substrate W, and ejects the chemical liquid to the upper side
of the substrate W. The feed pipe 132 is joined to the nozzle 131.
The nozzle 131 is located at the tip of the feed pipe 132. The
chemical liquid is fed into the feed pipe 132 from a chemical
liquid feed source. The feed pipe 132 is provided with the valve
133. The valve 133 opens and shuts an opening in a passageway
inside the feed pipe 132.
[0064] The rinse liquid feeder 135 feeds the rinse liquid to the
upper side of the substrate W. The rinse liquid serves to wash away
the chemical liquid adhering to the substrate W. Examples of the
rinse liquid to be fed from the rinse liquid feeder 135 include
deionized water (DIW), carbonated water, electrolytic ionized
water, ozonated water, ammonia water, diluted hydrochloric acid
water (of which dilution concentration is, for example about 10 ppm
to 100 ppm), and reduced water (hydrogen water).
[0065] The rinse liquid feeder 135 includes a nozzle 136, a feed
pipe 137, and a valve 138. The nozzle 136 faces the upper side of
the substrate W, and ejects the rinse liquid to the upper side of
the substrate W. The feed pipe 137 is joined to the nozzle 136. The
nozzle 136 is located at the tip of the feed pipe 137. The rinse
liquid is fed into the feed pipe 137 from a feed source. The feed
pipe 137 is provided with the valve 138. The valve 138 opens and
shuts an opening in a passageway inside the feed pipe 137.
[0066] The organic solvent feeder 140 feeds the organic solvent to
the upper side of the substrate W. For example, it is preferable
that the organic solvent allow a solvent contained in the filler
and water contained in the rinse liquid to be mixed therewith. The
organic solvent may be isopropyl alcohol (IPA). Examples of the
organic solvent may further include ethanol, acetone, propylene
glycol ethyl ether (PGEE), and propyleneglycol monomethyl ether
acetate (PGMEA).
[0067] The organic solvent feeder 140 includes a nozzle 142, a feed
pipe 144, and a valve 146. The nozzle 142 faces the upper side of
the substrate W, and ejects the chemical liquid to the upper side
of the substrate W. The feed pipe 144 is joined to the nozzle 142.
The nozzle 142 is located at the tip of the feed pipe 144. The
organic solvent is fed into the feed pipe 144 from a feed source.
The feed pipe 144 is provided with the valve 146. The valve 146
opens and shuts an opening in a passageway inside the feed pipe
144.
[0068] The filler feeder 150 feeds the filler to the upper side of
the substrate W. The filler is fed thereon, and thereby a filling
film is formed on the substrate W. In the case where fine patterns
are formed on the substrate W, the filler is filled in gaps between
the fine patterns to form the film. The filler feeder 150 feeding
the filler makes it possible to prevent the fine patterns of the
substrate W from easily being collapsed while, after cleaning by
the rinse liquid with high surface tension, the substrate W to
which the rinse liquid has been fed is dried. Note that the filling
film may be formed not only in the gaps between the fine patterns
but also on the fine patterns like a bridge.
[0069] For example, the filling film formed of the filler is
preferably allowed to sublimate (sublimable). The filler is, for
example a solution obtained by dissolving sublimable acrylate
polymer in an organic solvent. Examples of the organic solvent in
which the sublimable acrylate polymer is dissolved include PGEE.
Examples of the organic solvent may further include IPA, and
PGMEA.
[0070] The filler feeder 150 includes a nozzle 152, a feed pipe
154, and a valve 156. The nozzle 152 faces the upper side of the
substrate W, and ejects the filler to the upper side of the
substrate W. The feed pipe 154 is joined to the nozzle 152. The
nozzle 152 is located on the tip of the feed pipe 154. The filler
is fed into the feed pipe 154 from a feed source. The feed pipe 154
is provided with the valve 156. The valve 156 opens and shuts an
opening in a passageway inside the feed pipe 154.
[0071] The first cleaning liquid feeder 160 feeds the cleaning
liquid to the rear side of the substrate W. The first cleaning
liquid feeder 160 feeds the cleaning liquid to the central area,
outside the central portion held by the substrate holder 120, of
the rear side of the substrate W. Hereinafter, the central area
outside the central portion held by the substrate holder 120 is
simply referred to as a "central area". In the present
specification, the first cleaning liquid feeder 160 may simply be
referred to as a cleaning liquid feeder 160.
[0072] The cleaning liquid feeder 160 may feed an organic solvent
as the cleaning liquid. Preferable examples of the organic solvent
include IPA, PGMEA, PGEE, ethanol, acetone, and at least one of
them. Alternatively, the cleaning liquid feeder 160 may feed water
as the cleaning liquid.
[0073] The cleaning liquid feeder 160 includes a nozzle 162, a feed
pipe 164, and a valve 166. The nozzle 162 faces the upper side of
the substrate W, and ejects the cleaning liquid to the rear side of
the substrate W. The feed pipe 164 is joined to the nozzle 162. The
nozzle 162 is located at the tip of the feed pipe 164. The cleaning
liquid is fed into the feed pipe 164 from a feed source. The feed
pipe 164 is provided with the valve 166. The valve 166 opens and
shuts an opening in a passageway inside the feed pipe 164.
[0074] In the substrate processing apparatus 100, the filler feeder
150 feeding the filler to the upper side of the substrate W makes
it possible to prevent the fine patterns from easily being
collapsed while the substrate W to which the rinse liquid has been
ejected is dried. However, when the filler is fed to the substrate,
part of the filler may adhere to the rear side of the
substrate.
[0075] FIG. 2 is a schematic illustration of the rear side of the
substrate W, to which the filler adheres. As illustrated in FIG. 2,
in the case where the filler is fed to the substrate W and a filler
layer is formed thereon, the filler may adhere to the rear side of
the substrate W regardless of the substrate W being processed by
plasma ashing. In the case where the substrate is exposed to light
in a next photolithography process, the filler adhering to the rear
side of the substrate W may interfere with proper focus of light
because the surface height of the substrate W is out of a specified
height. This case makes it difficult to appropriately form an
exposure pattern, thereby decreasing product yield.
[0076] As illustrated in FIG. 1, the substrate processing apparatus
100 according to the present embodiment causes the cleaning liquid
feeder 160 to feed the cleaning liquid to the rear side of the
substrate W. Specifically, the cleaning liquid feeder 160 feeds the
cleaning liquid toward an area, held by the substrate holder 120,
of the rear side of the substrate W. This configuration enables the
substrate processing apparatus 100 according to the present
embodiment to prevent the filler from easily adhering to the rear
side of the substrate W.
[0077] Note that heating the substrate W with the filler adhering
to the rear side of the substrate W may make it difficult to remove
the filler as a result of progress in polymerization of the filler.
It is therefore preferable that the filler adhering to the rear
side of the substrate W be removed before the substrate W is
heated.
[0078] A positional relationship of the cleaning liquid feeder 160
with the substrate holder 120, and the substrate W, in the
substrate processing apparatus 100 according to the present
embodiment will be described with reference to FIGS. 3A and 3B.
Each of FIGS. 3A and 3B is a schematic top view of the substrate W,
the substrate holder 120, and the cleaning liquid feeder 160 in the
substrate processing apparatus 100 according to the present
embodiment. In FIGS. 3A and 3B, components other than the substrate
W, the disk portion 121A of the substrate holder 120, and the
nozzle 162 of the cleaning liquid feeder 160 are omitted in order
to avoid an excessively complicated description.
[0079] As illustrated in FIGS. 1 and 3A, the spin base 121 of the
substrate holder 120 has the disk portion 121A, and the substrate W
is placed on the disk portion 121A with a center of the substrate W
matching a center of the disk portion 121A. The nozzle 162 of the
cleaning liquid feeder 160 is disposed outside the disk portion
121A in a radial direction of the substrate W. The nozzle 162 of
the cleaning liquid feeder 160 is directed in a direction depicted
by the arrow in FIG. 3A. In FIG. 3A, the arrow from the nozzle 162
is directed to a boundary of the disk portion 121A of the substrate
holder 120. This enables the nozzle 162 of the cleaning liquid
feeder 160 to eject the cleaning liquid in the direction depicted
by the arrow in FIG. 3A.
[0080] As illustrated in FIG. 3B, the substrate holder 120 rotates
the substrate W in a rotational direction R while holding the
substrate W. The cleaning liquid feeder 160 feeds, from the nozzle
162, the cleaning liquid to the rear side of the substrate W with
the substrate holder 120 holding and rotating the substrate W. In
this case, the cleaning liquid feeder 160 feeds the cleaning liquid
toward the area, held by the substrate holder 120, of the rear side
of the substrate W. The cleaning liquid CW fed to the rear side of
the substrate W not only reaches the vicinity of the substrate
holder 120 in the substrate W but also spreads on the rear side of
the substrate by centrifugal force. When the cleaning liquid feeder
160 continues to feed the cleaning liquid CW, the cleaning liquid
CW spreads over the entire rear side of the substrate W except the
central portion of the substrate W.
[0081] A process in which the cleaning liquid CW spreads on the
rear side of the substrate W in the substrate processing apparatus
100 according to the present embodiment will next be described with
reference to FIGS. 4A to 4D. Each of FIGS. 4A to 4D is a
schematically top view illustrating a positional relationship
between the substrate holder 120, the cleaning liquid CW, and the
substrate W in the substrate processing apparatus 100 according to
the present embodiment. Note that each of FIGS. 4A to 4D depicts an
enlarged view in the vicinity of the disk portion 121A of the
substrate holder 120.
[0082] As illustrated in FIG. 4A, when feeding the cleaning liquid
CW is started with the substrate W rotating, the cleaning liquid CW
reaches the rear side of the substrate W. Note that when the
cleaning liquid feeder 160 starts feeding (ejecting) the cleaning
liquid CW from the nozzle 162, the cleaning liquid CW ejected from
the nozzle 162 reaches a point P on the rear side of the substrate
W. In the description below, the point P on the rear side of the
substrate W, which the cleaning liquid CW ejected from the nozzle
162 reaches may also be referred to as a reaching point P.
[0083] In the substrate processing apparatus 100 according to the
present embodiment, the nozzle 162 of the cleaning liquid feeder
160 is directed in a direction as a tangent direction of the
rotational direction of the substrate W. Note that the nozzle 162
of the cleaning liquid feeder 160 is preferably directed toward the
substrate W with a segment of a travelling direction projected on
the rear side of the substrate W being parallel to a perpendicular
direction to a direction from the center of the substrate W toward
the reaching point P. Here, the travelling direction is a
travelling direction of the cleaning liquid CW just before the
cleaning liquid CW reaches the reaching point P on the rear side of
the substrate W.
[0084] As illustrated in FIG. 4B, when the cleaning liquid CW is
then further fed with the substrate W rotating, the cleaning liquid
CW spreads from the reaching point P on the substrate W. At this
moment, the cleaning liquid CW spreads on the rear side of the
substrate W in both a direction in which the cleaning liquid CW is
ejected from the nozzle 162 of the cleaning liquid feeder 160, and
a radial direction of the substrate W in which the cleaning liquid
CW receives centrifugal force by rotation of the substrate W. Thus,
the central direction of spread of the cleaning liquid CW is
slightly inclined in the radial direction from the center of the
substrate W toward the reaching point P relative to a direction of
the segment of the travelling direction, projected on the substrate
W, of the cleaning liquid CW just before reaching the substrate
W.
[0085] As illustrated in FIG. 4C, when the cleaning liquid CW is
further fed with the substrate W rotating, the cleaning liquid CW
further spreads from the reaching point P on the substrate W. The
component (part) of the cleaning liquid CW in a reverse radial
direction from the reaching point P toward the center of the
substrate W approaches the area, held by the substrate holder 120,
of the rear side of the substrate W. Specifically, the central
portion of the rear side of the substrate W is in contact with the
disk portion 121A of the spin base 121 in the substrate holder 120,
and therefore the cleaning liquid CW approaches a boundary between
the substrate W and the disk portion 121A. In contrast, the
component of the cleaning liquid CW in the radial direction of the
substrate W from the center of the substrate W toward the reaching
point P spreads in both the direction of the segment of the
travelling direction, projected on the substrate W, of the cleaning
liquid CW from the nozzle 162 just before reaching the substrate W
(reaching point P), and the radial direction of the substrate W in
which the cleaning liquid CW receives centrifugal force by the
rotation of the substrate W.
[0086] As illustrated in FIG. 4D, when the cleaning liquid CW is
further fed with the substrate W rotating, the cleaning liquid CW
further spreads from the reaching point P on the substrate W. The
component of the cleaning liquid CW in the reverse radial direction
of the substrate W from the reaching point P toward the center of
the substrate W further approaches the area, held by the substrate
holder 120, of the rear side of the substrate W. Here, the
component is in the vicinity of the area held by the substrate
holder 120 without reaching the substrate holder 120, and in this
state rotates according to the rotation of the substrate W. Note
that the distance between the cleaning liquid CW (reaching point P)
and the substrate holder 120 is preferably 3 mm or less, and more
preferably 1 mm or less. Specifically, the central portion of the
rear side of the substrate W is in the contact with the disk
portion 121A of the spin base 121 in the substrate holder 120, and
therefore the state in which the cleaning liquid CW is in the
vicinity of the boundary between the substrate W and the disk
portion 121A without reaching the substrate holder 120 progresses.
In contrast, the component of the cleaning liquid CW in the radial
direction from the center of the substrate W toward the reaching
point P spreads in both the direction of the segment of the
travelling direction, projected on the substrate W, of the cleaning
liquid CW from the nozzle 162 just before reaching the substrate W
(reaching point P), and the radial direction of the substrate W in
which the cleaning liquid CW receives centrifugal force by the
rotation of the substrate W.
[0087] When the cleaning liquid CW is then further fed with the
substrate W rotating, the cleaning liquid CW further spreads from
the reaching point P on the substrate W. Although illustration is
omitted here, the component of the cleaning liquid CW in the
reverse radial direction of the substrate W from the reaching point
P toward the center of the substrate W is in the vicinity of the
area held by the substrate holder 120, and in this state rotates
once according to rotation of the substrate W. Specifically, the
central portion of the rear side of the substrate W is in contact
with the disk portion 121A of the spin base 121 in the substrate
holder 120, and therefore the cleaning liquid CW is in the vicinity
of the boundary between the substrate W and the disk portion 121A,
and in this state rotates once. In contrast, the component of the
cleaning liquid CW in the radial direction of the substrate W from
the center of the substrate W toward the reaching point P spreads
in the direction of the segment of the travelling direction,
projected on the substrate W, of the cleaning liquid CW from the
nozzle 162 just before reaching the substrate W (reaching point P),
and then reaches the edge of the substrate W, thereby spreading
over the entire rear side of the substrate W.
[0088] In the substrate processing apparatus 100 according to the
present embodiment, the cleaning liquid feeder 160 feeding the
cleaning liquid CW enables spreading of the cleaning liquid CW
almost all over the area, not held by the substrate holder 120, of
the rear side of the substrate W. It is therefore possible to
clean, by the cleaning liquid CW of the cleaning liquid feeder 160,
the substrate W in which filler adheres to the rear side of the
substrate W as a result of the filler feeder 150 feeding the filler
to the substrate W.
[0089] Note that preferably in FIG. 4A the distance between the
reaching point P and the substrate holder 120 is determined based
on spread of the cleaning liquid CW. Examples of the distance
between the reaching point P and the substrate holder 120 may
include not less than 0.5 mm and not greater than 5.0 mm, and not
less than 0.8 mm and not greater than 4.0 mm.
[0090] Note that in the above description with reference to FIGS.
3A, 3B and 4A to 4D, the segment of the travelling direction,
projected on the substrate W, of the cleaning liquid CW just before
reaching the substrate W (reaching point P) is almost parallel to
the perpendicular direction to the direction from the center of the
substrate W toward the reaching point P, but the present embodiment
is not limited to this. In the description below of the present
specification, the direction of the segment of the travelling
direction, projected on the substrate W, of the cleaning liquid CW
from the nozzle 162 just before reaching the substrate W may be
described as an "incident direction of the cleaning liquid CW". The
incident direction of the cleaning liquid CW need not be parallel
to the perpendicular direction to the direction from the center of
the substrate W toward the reaching point P. The incident direction
of the cleaning liquid CW varies according to an ejection distance
of the cleaning liquid CW even if the location of the nozzle 162 is
unchanged.
[0091] A relationship between the incident direction of the
cleaning liquid CW and the perpendicular direction to the direction
from the center of the substrate W toward the reaching point P will
next be described with reference to FIG. 5. FIG. 5 is a schematic
illustration depicting the reaching point of the cleaning liquid
fed to the substrate W from the cleaning liquid feeder 160 in the
substrate processing apparatus 100 according to the present
embodiment.
[0092] When the cleaning liquid ejected from the nozzle 162 of the
cleaning liquid feeder 160 reaches a reaching point P1 on the
substrate W, the incident direction of the cleaning liquid CW is
parallel to a direction to a perpendicular direction from the
center of the substrate W toward the reaching point P1. The
incident direction of the cleaning liquid CW being parallel to the
perpendicular direction to the direction from the center of the
substrate W toward the reaching point P1 is however not
indispensable.
[0093] For example, the incident direction of the cleaning liquid
CW may be slightly inclined in a radial direction from the center
of the substrate W toward a reaching point relative to a
perpendicular direction to the radial direction. For example, when
a cleaning liquid CW ejected from the nozzle 162 of the cleaning
liquid feeder 160 reaches a reaching point P2 on the substrate W,
the incident direction of the cleaning liquid CW is directed in a
direction that is slightly inclined in a radial direction from the
center of the substrate W toward the reaching point P2 relative to
a perpendicular direction to the radial direction. In this case,
the spread of the cleaning liquid CW in the reverse radial
direction of the substrate W from the reaching point P2 toward the
center of the substrate W may be insufficient because the cleaning
liquid CW receives the centrifugal force in the radial direction
from the center of the substrate W toward the reaching point P2. It
is therefore preferable that an angle .theta.1 between the incident
direction of the cleaning liquid CW and the perpendicular direction
to the radial direction from the center of the substrate W toward
the reaching point P2 not be too large. Preferable examples of the
angle .theta.1 include not greater than 30.degree..
[0094] Alternatively, the incident direction of the cleaning liquid
CW may be directed in a direction that is slightly inclined in a
reverse radial direction from a reaching point toward the center of
the substrate W relative to a perpendicular direction to a
direction (radial direction) from the center of the substrate W
toward the reaching point. For example, when a cleaning liquid
ejected from the nozzle 162 of the cleaning liquid feeder 160
reaches a reaching point P3 on the substrate W, the incident
direction of the cleaning liquid CW is directed in a direction that
is slightly inclined in a reverse radial direction from the
reaching point P3 toward the center of the substrate W relative to
a perpendicular direction to a direction (radial direction) from
the center of the substrate W toward the reaching point P3. In this
case, the spread of the cleaning liquid CW in the radial direction
of the substrate W from the center of the substrate W to the
reaching point P3 may be insufficient because the component of the
cleaning liquid CW in the incident direction (reverse radial
direction) is the component in a direction against the centrifugal
force in the radial direction. Also, in the case where the incident
direction of the cleaning liquid CW is directed in the direction
that is slightly inclined in the reverse radial direction relative
to the perpendicular direction to the direction from the center of
the substrate W toward the reaching point P1, the cleaning liquid
CW reaching the boundary between the substrate holder 120 and the
substrate W may cause a reduction in a substrate holding function
by the substrate holder 120 because the cleaning liquid CW may
permeate inside the substrate holder 120 through a gap between the
substrate holder 120 and the substrate W. It is therefore
preferable that an angle .theta.2 between the incident direction of
the cleaning liquid CW and the perpendicular direction to the
direction from the center of the substrate W toward the reaching
point P3 not be too large. Preferable examples of the angle
.theta.2 include not greater than 20.degree..
[0095] Note that the incident direction of the cleaning liquid CW
being almost parallel to the perpendicular direction to the
direction from the center of the substrate W toward the reaching
point facilitates adjustment of the ejection direction of the
nozzle 162, and the incident direction and the ejection distance of
the cleaning liquid CW. The incident direction of the cleaning
liquid CW may therefore be almost parallel to the perpendicular
direction to the direction from the center of the substrate W
toward the reaching point.
[0096] Note that in the description with reference to FIGS. 1, and
3A to 5, the cleaning liquid feeder 160 ejects, from one nozzle
thereof, a cleaning liquid to a substrate W to be processed, but
the present embodiment is not limited to this. The cleaning liquid
feeder 160 may have nozzles and eject a cleaning liquid to the
substrate W from each of the nozzles.
[0097] In the description with reference to FIGS. 3A and 3B, the
cleaning liquid feeder 160 ejects, from one nozzle thereof, a
cleaning liquid to a substrate W to be processed, but the present
embodiment is not limited to this. The cleaning liquid feeder 160
may have nozzles and eject different cleaning liquids to the
substrate W from the nozzles.
[0098] Here, a cleaning liquid feeder 160 in a substrate processing
apparatus 100 according to the present embodiment will be described
with reference to FIGS. 6A and 6B. FIG. 6A is a schematic top view
of the substrate processing apparatus 100 according to the present
embodiment. As illustrated in FIG. 6A, the cleaning liquid feeder
160 has, as nozzles 162, nozzles 162a, 162b, 162c, and 162d.
[0099] The nozzles 162a, 162b, 162c, and 162d are disposed at
regular intervals around an axis of rotation AX of the substrate
holder 120. Respective distances from the nozzles 162a, 162b, 162c,
and 162d to the axis of rotation AX are almost the same as each
other. The nozzles 162a and 162c are disposed opposite to each
other, while the nozzles 162b and 162d are disposed opposite to
each other.
[0100] FIG. 6B is a schematic top view of the substrate processing
apparatus 100 according to the present embodiment. As illustrated
in FIG. 6B, each of the nozzles 162a and 162c ejects a cleaning
liquid in the rotational direction R of the substrate W. Each of
the nozzles 162b and 162d ejects a cleaning liquid in a radial
direction of the substrate W. Respective distances from the center
of the substrate W to respective reaching points on the substrate W
of the cleaning liquids ejected from the nozzles 162a and 162c are
therefore different from respective distances from the center of
the substrate W to respective reaching points on the substrate W of
the cleaning liquids ejected from the nozzles 162b and 162d. The
respective distances from the center of the substrate W to the
respective reaching points on the substrate W of the cleaning
liquids ejected from the nozzles 162a and 162c are comparative
short, whereas the respective distances from the center of the
substrate W to the respective reaching points on the substrate W of
the cleaning liquids ejected from the nozzles 162b and 162d are
comparative long.
[0101] Note that the cleaning liquids to be ejected from the
nozzles 162a and 162c may be different from the cleaning liquids to
be ejected from the nozzles 162b and 162d. For example, each of the
nozzles 162a and 162c may eject IPA as the cleaning liquid thereof,
and each of the nozzles 162b and 162d may eject DIW as the cleaning
liquid thereof. In this case, the nozzles 162a and 162c may be
joined to a common feed pipe, and the nozzles 162b and 162d may be
joined to a common feed pipe different from that of the nozzles
162a and 162c.
[0102] Note that in the above description with reference to FIGS.
1, and 3A to 6B, the cleaning liquid feeder 160 of each substrate
processing apparatus 100 feeds a cleaning liquid to the central
area of the rear side of a substrate W to be processed, thereby
cleaning the whole rear side of the substrate W other than the
central portion thereof, but the present embodiment is not limited
to this. The substrate processing apparatus 100 may have a feeder,
different from the cleaning liquid feeder 160, which feeds a
cleaning liquid suitable for cleaning of the rear side, an edge,
and a periphery of the upper side of the substrate W.
[0103] A substrate processing apparatus 100 further including a
second cleaning liquid feeder 170 that feeds a cleaning liquid to a
rear side of a substrate W will next be described with reference to
FIG. 7. FIG. 7 is a schematic illustration of the substrate
processing apparatus 100 according to the present embodiment. The
substrate processing apparatus 100 illustrated in FIG. 7 further
includes the second cleaning liquid feeder 170 that feeds the
cleaning liquid to the rear side of the substrate W, and has a
configuration that is similar to that of the substrate processing
apparatus 100 as explained above with reference to FIG. 1, except
the second cleaning liquid feeder 170. Duplicate descriptions are
therefore omitted for the purpose of avoiding redundancy.
[0104] The substrate processing apparatus 100 according to the
present embodiment includes the second cleaning liquid feeder 170
in addition to a chamber 110, a substrate holder 120, a chemical
liquid feeder 130, a rinse liquid feeder 135, an organic solvent
feeder 140, a filler feeder 150, and a first cleaning liquid feeder
160. The second cleaning liquid feeder 170 feeds the cleaning
liquid to the rear side of substrate W.
[0105] The second cleaning liquid feeder 170 feeds a cleaning
liquid thereof to an area of the rear side of the substrate W,
which is, in a radial direction, outside an area to which a
cleaning liquid from the first cleaning liquid feeder 160 is fed.
The cleaning liquid fed from the second cleaning liquid feeder 170
sufficiently reaches an edge of the substrate W, and cleans the
rear side, the edge, and a periphery of an upper side of the
substrate W. Note that in the present specification, the second
cleaning liquid feeder 170 may simply be referred to as a cleaning
liquid feeder 170.
[0106] The second cleaning liquid feeder 170 includes a nozzle 172,
a feed pipe 174, and a valve 176. The nozzle 172 faces the rear
side of the substrate W, and ejects the cleaning liquid to the rear
side of the substrate W. The feed pipe 174 is joined to the nozzle
172. The nozzle 172 is located at the tip of the feed pipe 174. The
cleaning liquid is fed into the feed pipe 174 from a feed source.
The feed pipe 174 is provided with the valve 176. The valve 176
opens and shuts an opening in a passageway inside the feed pipe
174.
[0107] Note that in the description with reference to FIG. 7, the
cleaning liquid feeder 170 ejects the cleaning liquid to the
substrate W from one nozzle thereof, but the present embodiment is
not limited to this. The cleaning liquid feeder 170 may have
nozzles, and ejects respective cleaning liquids to the substrate W
from the nozzles.
[0108] FIG. 8 is a schematic top view of a substrate processing
apparatus 100 according to the present embodiment. In the substrate
processing apparatus 100, a first cleaning liquid feeder 160 has
nozzles 162a, 162b, 162c, and 162d. A second cleaning liquid feeder
170 has nozzles 172a, 172b, 172c, and 172d.
[0109] The nozzles 172a, 172b, 172c, and 172d are disposed at
regular intervals around an axis of rotation of a substrate holder
120. Note that respective distances from the nozzles 172a, 172b,
172c, and 172d to the axis of rotation AX are almost the same as
each other. The respective distances from the nozzles 172a, 172b,
172c, and 172d to the axis of rotation AX are longer than
respective distances from the nozzles 162a, 162b, 162c, and 162d to
the axis of rotation AX.
[0110] The nozzles 172a and 172c are disposed opposite to each
other, while the nozzles 172b and 172d are disposed opposite to
each other. Here, each of the nozzles 172a, 172b, 172c, and 172d
ejects the cleaning liquid thereof in a direction that is slightly
inclined in a radial direction relative to a rotational direction
of the substrate W. Specifically, an ejection direction of the
cleaning liquid from each of the nozzles 172a, 172b, 172c, and 172d
is represented by a sum of a segment of the rotational direction of
the substrate W, and a segment of the radial direction of the
substrate W. The distance from a center of the substrate W toward a
reaching point on the substrate W of each cleaning liquid fed from
the second cleaning liquid feeder 170 is longer than the distance
from the center of the substrate W toward a reaching point on the
substrate W of each cleaning liquid fed from the first cleaning
liquid feeder 160. For example, each of the nozzles 172a, 172b,
172c, and 172d may eject IPA as the cleaning liquid thereof.
Alternatively, each of the nozzles 172a, 172b, 172c, and 172d may
eject DIW as the cleaning liquid thereof.
[0111] Note that the cleaning liquid to be fed from each second
cleaning liquid feeder 170 illustrated in FIGS. 7 and 8 may be
different in at least part from the cleaning liquid to be fed from
each first cleaning liquid feeder 160. The cleaning liquid to be
fed from each second cleaning liquid feeder 170 may however be the
same as the cleaning liquid to be fed from each first cleaning
liquid feeder 160.
[0112] Cleaning liquid feeders 160, and 170 in a substrate
processing apparatus 100 according to the present embodiment will
next be described with reference to FIGS. 9A and 9C. FIG. 9A is a
schematically perspective view of a substrate holder 120, and the
cleaning liquid feeders 160, and 170 in the substrate processing
apparatus 100 according to the present embodiment. As illustrated
in FIG. 9A, nozzles 162a, 162b, 162c, and 162d of the cleaning
liquid feeder 160 are disposed in the vicinity of the substrate
holder 120, while nozzles 172a, 172b, 172c, and 172d of the
cleaning liquid feeder 170 are disposed apart from the substrate
holder 120.
[0113] FIG. 9B is an enlarged partial top view of the substrate
holder 120, and the cleaning liquid feeders 160, and 170 in the
substrate processing apparatus 100 according to the present
embodiment. As illustrated in FIG. 9B, the tip of the nozzle 162a
is directed upward in a circumferential direction, while the tip of
the nozzle 172a is directed upward in a direction represented by
sum of a segment of the circumferential direction, and a segment of
a radial direction.
[0114] FIG. 9C is an enlarged partial cross-sectional side view of
the cleaning liquid feeder 160 in the substrate processing
apparatus 100 according to the present embodiment. As illustrated
in FIG. 9C, a feed pipe 164 of the cleaning liquid feeder 160 is
perpendicular to the substrate W, and elongated in a vertical
direction. The nozzle 162 is located at the tip of the feed pipe
164. The nozzle 162 is provided so as to be directed diagonally
upward at a predetermined angle .theta. relative to the horizontal.
Examples of the angle .theta. may include not less than 5.degree.
and not greater than 25.degree., and not less than 10.degree. and
not greater than 20.degree.. Examples of the distance between the
substrate W and the nozzle 162 in the ejection direction of the
nozzle 162 may include not less than 1 mm and not greater than 20
mm, and not less than 1 mm and not greater than 15 mm.
[0115] A substrate processing apparatus 100 according to the
present embodiment will next be described with reference to FIGS.
10A to 11. The substrate processing apparatus 100 according to the
present embodiment differs from each substrate processing apparatus
100 described with reference to FIGS. 1 and 7 in that chambers 110
(FIGS. 1 and 7) and chambers 210 are provided. Duplicate
descriptions are therefore omitted for the purpose of avoiding
redundancy.
[0116] FIG. 10A is a schematic plan view of the substrate
processing apparatus 100. FIG. 10B is a schematic elevation
illustrating a configuration of the substrate processing apparatus
100. The substrate processing apparatus 100 is classified as a
single wafer type, and performs, one substrate each, various
processes such as cleaning and etching of a substrate W to be
processed such as a semiconductor wafer.
[0117] As illustrated in FIGS. 10A, and 10B, the substrate
processing apparatus 100 includes liquid processing units 100C
provided for each of the chambers 110, heat treatment units 100H
provided for each of the chambers 210, load ports LP, an indexer
robot IR, a center robot CR, and a control unit 220. A carrier C
that houses substrates W is placed on each load port LP. The
control unit 220 controls the load ports LP, the indexer robot IR,
the center robot CR, the liquid processing units 100C, and the heat
treatment units 100H. As illustrated in FIG. 12, the control unit
220 includes a processor 222, and memory 224.
[0118] Each of the load ports LP houses the substrates W in a
stacked manner. The indexer robot IR conveys a substrate W to be
processed between each load port LP and the center robot CR. The
center robot CR conveys the substrate W between the indexer robot
IR and each liquid processing unit 100C. Each of the liquid
processing units 100C ejects a processing liquid thereof to a
substrate W to be processed, thereby processing the substrate
W.
[0119] Specifically, the liquid processing units 100C are arranged
so as to surround the center robot CR in plan view, thereby forming
processing towers TW (in FIG. 10A, four processing towers TW). Each
of the processing towers TW includes the heat treatment unit 100H
and liquid processing units 100C stacked on top and bottom
thereof.
[0120] The substrate processing apparatus 100 further includes a
conveyance path 230 elongated in a horizontal direction. The
conveyance path 230 is elongated in a straight line from the
indexer robot IR to the center robot CR. The processing towers TW
are arranged symmetrically across the conveyance path 230. The
processing towers TW are disposed on both sides of the conveyance
path 230 so as to be arranged side by side in the elongated
direction of the conveyance path 230. In the present embodiment,
the processing towers TW are disposed with two processing towers TW
being on each side of the conveyance path 230.
[0121] Of the processing towers TW, two processing towers TW on the
near side to the indexer robot IR are referred to as first and
second processing towers TWA and TWB. The first and second
processing towers TWA and TWB are opposed to each other across the
conveyance path 230. Of the processing towers TW, two processing
towers TW on the far side from the indexer robot IR are referred to
as third and fourth processing towers TWC and TWD. The third and
fourth processing towers TWC and TWD are opposed to each other
across the conveyance path 230.
[0122] The first and third processing towers TWA and TWC are
disposed side by side along the conveyance path 230. The second and
fourth processing towers TWB and TWD are also disposed side by side
along the conveyance path 230.
[0123] The first processing tower TWA includes two liquid
processing units 100C, and one heat treatment unit 100H. In the
same way as the first processing tower TWA, each of the second to
fourth processing towers TWB to TWD also includes two liquid
processing units 100C, and one heat treatment unit 100H. Note that
the liquid processing units 100C have an identical configuration.
The heat treatment units 100H have an identical configuration.
[0124] As illustrated in FIG. 10B, in the first processing tower
TWA, a liquid processing unit 100C, a heat treatment unit 100H, and
a liquid processing unit 100C are stacked with the heat treatment
unit 100H interposed between the two liquid processing units 100C.
Like the first processing tower TWA, in each of the second to
fourth processing towers TWB to TWD, a liquid processing unit 100C,
a heat treatment unit 100H, and a liquid processing unit 100C are
stacked with the heat treatment unit 100H interposed between the
two liquid processing units 100C.
[0125] FIG. 11 is a schematic diagram illustrating one of the heat
treatment units 100H in the substrate processing apparatus 100
according to the present embodiment. The heat treatment unit 100H
includes a chamber 210, a substrate holder 200 that holds a
substrate W to be processed, a heater 201 (substrate heating unit)
that heats the substrate W, a cooler unit 202 that cools the
substrate W, and lift pins 203 for lifting the substrate W up and
down.
[0126] The substrate holder 200 is a plate member that supports the
substrate W in a horizontal posture from below. The substrate
holder 200 is included in a substrate holding unit that holds the
substrate W in the horizontal posture. The substrate holder 200 is
housed in the chamber 210.
[0127] The heater 201, and the cooler unit 202 are built in the
substrate holder 200. The heater 201, the cooler unit 202, and the
substrate holder 200 constitute a temperature adjustment plate. The
heater 201 heats the substrate W by heat transfer or heat
radiation. The heater 201 is connected to a heater power supply
unit 209 that supplies electric power to the heater 201. The heater
201 serves to heat the substrate W to about 250.degree. C.
[0128] An electromagnetic wave exposure unit that heats the
substrate W by exposing it to electromagnetic waves (examples
thereof include ultraviolet rays, infrared rays, microwaves,
X-rays, and laser beams) may be used in place of the heater 201.
The cooler unit 202 may have a cooling passage that passes inside
the substrate holder 200. The cooler unit 202 may have a
thermoelectric cooling device.
[0129] The lift pins 203 are inserted into respective through holes
that are pieced in the substrate holder 200. A lift pin lifting
unit 216 causes the lift pins 203 to lift up and down between an
upper position and a lower position. When the lift pins 203 are
located in the upper position, the substrate W is separated upward
from the substrate holder 200. When the lift pins 203 are located
in the lower position, the upper ends of the lift pins 203 are
retracted into the substrate holder 200. Thus, the substrate W is
supported from below by the substrate holder 200.
[0130] The chamber 210 has a base 211, and a movable lid 212 that
is movable up and down relative to the base 211. The base 211 and
the movable lid 212 form an internal space 213 of the chamber 210.
A lid driver unit 214 lifts the movable lid 212 up and down between
an upper position and a lower position. When the movable lid 212 is
located in the lower position, the movable lid 212 is in contact
with the base 211. Thus, the chamber 210 is closed. When the
movable lid 212 is located in the upper position, the center robot
CR is allowed to access the internal space 213 of the chamber
210.
[0131] FIG. 12 is a block diagram of the substrate processing
apparatus 100 according to the present embodiment. As illustrated
in FIG. 12, the control unit 220 includes a microcomputer to
control a control target equipped for the substrate processing
apparatus 100 in accordance with a prescribed program.
[0132] Specifically, the control unit 220 includes the processor
222, and the memory 224 in which the program is stored. The control
unit 220 is configured to perform various controls for substrate
processing as a result of the processor 222 executing the program.
In particular, the control unit 220 controls respective operations
of the indexer robot IR, the center robot CR, shutter
opening/closing units 116, the lid driver units 214, the lift pin
lifting units 216, the heater power supply units 209, a first guard
lifting unit 193L, a second guard lifting unit 194L, and valves
128, 133, 138, 146, 156, and 166.
[0133] A substrate processing by the substrate processing apparatus
100 will next be described with reference to FIGS. 1, 7, and 10A to
15C. FIG. 13 is a flow chart illustrating the substrate processing
by the substrate processing apparatus 100, and mainly depicts
processing realized by the control unit 220 executing the program.
Each of FIGS. 14A to 14C, and 15A to 15C is a schematic
illustration depicting the substrate processing.
[0134] The substrate processing apparatus 100 performs continuous
processing of substrates W. During the continuous processing of
substrates W, the heater 201 of each heat treatment unit 100H is in
an energized state by a corresponding heater power supply unit 209
(see FIG. 12).
[0135] As illustrated in FIG. 14A, the indexer robot IR, and the
center robot CR (FIGS. 10A and 10B) first convey a substrate W to
be processed from a carrier C of the substrate W to a liquid
processing unit 100C (first loading step: S102). The center robot
CR accesses the liquid processing unit 100C through the entrance
112 thereof (FIGS. 1 and 7). The substrate W conveyed to the liquid
processing unit 100C is transferred to the substrate holder 120 by
the center robot CR. The substrate W is placed on the spin base 121
so that the upper side of the substrate W faces upward.
[0136] The valve 128 is then opened. The substrate W is accordingly
held by the substrate holder 120 with the rear side of the
substrate W being in contact with the upper surface of the spin
base 121 (first substrate holding step). The substrate W is still
held and kept in a horizontal position until the substrate W is
unloaded from the liquid processing unit 100C by the center robot
CR.
[0137] As illustrated in FIG. 14B, the electric motor 123 then
starts rotating the substrate W (substrate rotating step: S104).
The first, and second guard lifting units 193L, and 194L lift
respective first, and second guards 193, and 194 up to the side of
the substrate W.
[0138] As illustrated in FIG. 14C, the valve 133 is then opened,
and the chemical liquid feeder 130 starts feeding, from the nozzle
131, a chemical liquid to the upper side of the substrate W. The
chemical liquid fed to the upper side of the substrate W spreads
over the entire upper side of the substrate W by centrifugal force.
The substrate W is thus processed by the chemical liquid (chemical
liquid processing step: S106). The chemical liquid discharged
outward from the substrate W by the centrifugal force is received
by the first guard 193.
[0139] After the chemical liquid is fed to the upper side of the
substrate W for a certain time, the valve 133 is shut. Before an
organic solvent is ejected, the first guard lifting unit 193L lifts
the first guard 193 down in the lower position, and the valve 146
is opened. As shown in FIG. 15A, the organic solvent feeder 140
accordingly starts feeding, from the nozzle 142, the organic
solvent to the upper side of the substrate W (organic solvent
feeding step: S108). The organic solvent fed to the upper side
spreads over the entire upper side by the centrifugal force. The
chemical liquid on the substrate W is accordingly exchanged for the
organic solvent. The chemical liquid and the organic solvent
discharged outward from the substrate W by the centrifugal force
are received by the second guard 194.
[0140] While the organic solvent is being fed to the upper side,
the nozzle 152 is moved by a nozzle mover unit 158 above a central
position of the substrate W. After the organic solvent is fed to
the upper side of the substrate W for a certain time, the valve 146
is shut, and the valve 156 is opened. As illustrated in FIG. 15B,
the filler feeder 150 accordingly starts feeding, from the nozzle
152, filler to the upper side of the substrate W (filler feeding
step: S110). The filler fed to the upper side of the substrate W
spreads over the entire upper side of the substrate W by
centrifugal force. The organic solvent on the substrate W is
accordingly exchanged for the filler. The upper side of the
substrate W is consequently covered with a liquid film of the
filler. The organic solvent and the filler discharged outward from
the substrate W by the centrifugal force are received by the second
guard 194. Just after ejecting of the filler ends, the nozzle 152
is moved in a retraction position before a cleaning liquid is
ejected.
[0141] The filler fed to the upper side of the substrate W from the
nozzle 152 may spread toward the rear side of the substrate W from
the periphery of the upper side. The filler scattering outside the
upper side of the substrate W may be returned by the first, and
second guards 193, and 194 to adhere to the periphery of the rear
side. The valves 166, and 176 are therefore opened after the upper
side of the substrate W is covered with the liquid film of the
filler. As illustrated in FIG. 15C, the cleaning liquid feeders
160, and 170 then start feeding, from their respective nozzles 162,
and 172, respective cleaning liquids to the rear side of the
substrate W (cleaning liquid feeding step: S112). The respective
cleaning liquids ejected from the nozzles 162, and 172 are fed to
the rear side of the substrate W, and thereby the rear side of the
substrate W is cleaned. The liquid film of the filler makes it
possible to prevent the rear side from easily being contaminated.
The cleaning liquid feeder 160 thus functions as a cleaning
unit.
[0142] The valves 166, and 176 are then shut, and the second guard
194 is moved in the lower position. The electric motor 123 then
stops rotating the substrate W. The valve 128 is then shut.
[0143] The shutter opening/closing unit 116 (FIGS. 1, and 7)
subsequently opens the shutter 114 again. The center robot CR then
accesses the liquid processing unit 100C through the entrance 112,
thereby unloading the substrate W from the liquid processing unit
100C (first unloading step: S114).
[0144] The center robot CR then loads the substrate W into a
corresponding heat treatment unit 100H (FIG. 11) (second loading
step: S116). At this moment, the lid driver unit 214 locating the
movable lid 212 in the upper position enables the center robot CR
to access the heat treatment unit 100H. The substrate W is then
held in a horizontal position by the substrate holder 200 (second
substrate holding step). Specifically, after the substrate W is
placed on the lift pins 203 located in the upper position, the lift
pins 203 are lifted down in the lower position by the lift pin
lifting unit 216. The substrate W is thus placed on the upper
surface of the substrate holder 200. The center robot CR then
retracts from the heat treatment unit 100H. The lid driver unit 214
subsequently locates the movable lid 212 in the lower position.
Thus, the chamber 210 is closed.
[0145] In the heat treatment unit 100H, the substrate W is heated
by the heater 201 built in the substrate holder 200 (substrate
heating step: S118). The filler covering the upper side of the
substrate W is accordingly solidified (solidification step).
Specifically, a solvent contained in the filler evaporates, and
only the component solidified remains on the upper side. Thus, a
sublimable coating film covering the upper side of the substrate W
is formed. Performance of the solidification step ensures that such
a coating film is formed.
[0146] Note that such a periphery cleaning step described above is
performed before the start of the solidification step. The
periphery of the rear side of the substrate W is therefore cleaned
before the filler is solidified by the solidification step. It
would therefore facilitate cleaning of the periphery of the rear
side as compared with the periphery of the rear side being cleaned
after the solidification of the filler. The lid driver unit 214
(FIG. 12) then locates the movable lid 212 in the upper position,
and the lift pin lifting unit 216 lifts the lift pins 203 up in the
upper position. The center robot CR then receives the substrate W
from the lift pins 203 to unload the substrate W from the heat
treatment unit 100H (second unloading step: S120). The process
described above enables processing of the substrate W.
[0147] Note that the rotational speed for the substrate W may be
changed according to the processing of the substrate W. For
example, the rotational speed for the substrate W may be changed
appropriately after the filler is fed to the substrate W.
[0148] An embodiment in which a rotational speed for a substrate W
is changed after filler is fed to a substrate W to be processed
will be described with reference to FIG. 16. FIG. 16 is a flow
chart illustrating a substrate processing method by a substrate
processing apparatus according to the present embodiment. Note that
the substrate processing method by the substrate processing
apparatus according to the present embodiment is the same as the
flow chart illustrated in FIG. 13 except details of the filler
feeding step (S110), and the cleaning liquid feeding step (S112),
and FIG. 16 therefore illustrates only a filler feeding step
(S110), and a cleaning liquid feeding step (S112) in the present
flow chart.
[0149] As illustrated in FIG. 16, in the filler feeding step
(S110), a valve 156 is opened with an electric motor 123 rotating
the substrate W, and a filler feeder 150 thereby starts feeding,
from a nozzle 152 thereof, the filler to an upper side of the
substrate W to eject a predetermined amount of filler (filler
ejecting step: S110a). The valve 156 is subsequently shut, and the
feeding of the filler to the upper side of the substrate W from the
nozzle 152 is stopped.
[0150] The electric motor 123 subsequently rotates the substrate W
at a first rotational speed. Thickness of a filler layer is
determined by the amount of filler ejected and the first rotational
speed (film thickness determining step: S110b). For example, the
first rotational speed is not less than 1,000 rpm and not greater
than 3,000 rpm.
[0151] The electric motor 123 subsequently rotates the substrate W
at a second rotational speed. The second rotational speed is lower
than the first rotational speed. Rotating the substrate W at the
second rotational speed that is a comparatively low speed enables
the fifer to spread over the entire upper side of the substrate W
even if the substrate has a micro structure (permeation step:
S110c). For example, the second rotational speed is not less than
10 rpm and not greater than 500 rpm.
[0152] The electric motor 123 subsequently rotates the substrate W
at a third rotational speed. The third rotational speed is higher
than the second rotational speed. Rotating the substrate W at the
third rotational speed that is a comparatively high speed makes it
possible to spin off remaining filler on the substrate and dry the
substrate W (drying step: S110d). For example, the third rotational
speed is not less than 1,000 rpm and not greater than 3,000
rpm.
[0153] A cleaning liquid feeder 160 subsequently feeds, from a
nozzle 162 thereof, a cleaning liquid to the rear side of the
substrate W. The cleaning liquid ejected from the nozzle 162 is fed
to the rear side of the substrate W, thereby cleaning the rear side
of the substrate W (cleaning liquid feeding step: S112).
[0154] As described above with reference to FIG. 7, in the case
where the substrate processing apparatus 100 includes a second
cleaning liquid feeder 170 in addition to the first cleaning liquid
feeder 160, the cleaning liquid ejected from the nozzle 162 is
first fed to the central area of a rear side of the substrate W,
thereby cleaning the central area of the rear side of the substrate
W (step of feeding inside cleaning liquid: S112a). In this case,
the electric motor 123 rotates the substrate W at a fourth
rotational speed. The fourth rotational speed is lower than the
third rotational speed. Rotating the substrate W at the fourth
rotational speed that is a comparatively low speed ensures that the
rear side of the substrate W is cleaned by the cleaning liquid fed
to the central area of the rear side of the substrate W. For
example, the fourth rotational speed is not less than 10 rpm and
not greater than 200 rpm.
[0155] A cleaning liquid ejected from a nozzle 172 is subsequently
fed to the peripheral area of the rear side of the substrate W, and
thereby cleaning the peripheral area of the rear side and the edge
of the substrate W (step of feeding outside cleaning liquid:
S112b). In this case, the electric motor 123 rotates the substrate
W at a fifth rotational speed. The fifth rotational speed is higher
than the fourth rotational speed. Rotating the substrate W at the
fifth rotational speed that is a comparatively high speed ensures
that the rear side, the edge, and the peripheral area of the upper
side of the substrate W are cleaned by the cleaning liquid fed to
the peripheral area of the rear side of the substrate W. For
example, the fifth rotational speed is not less than 50 rpm and not
greater than 2,000 rpm.
[0156] Note that although the step of feeding outside cleaning
liquid (S112b) is performed after the step of feeding inside
cleaning liquid (S112a) in the explanation with reference to FIG.
16, the present embodiment is not limited to this. The step of
feeding inside cleaning liquid (S112a) may be performed after the
step of feeding outside cleaning liquid (S112b). Here, a cleaning
liquid fed to the rotating substrate W receives centrifugal force
in a radial direction from the center of the substrate W toward the
edge of the substrate W. Therefore, performing the step of feeding
outside cleaning liquid (S112b) after the step of feeding inside
cleaning liquid (S112a) makes it possible to sufficiently clean the
central and peripheral areas of the rear side and the edge of the
substrate W.
[0157] Also note that although the step of feeding outside cleaning
liquid (S112b) is performed after the step of feeding inside
cleaning liquid (S112a) in the explanation with reference to FIG.
16, the present embodiment is not limited to this. The respective
cleaning liquids may be fed to the central and peripheral areas of
the rear side of the substrate W at the same time.
[0158] FIG. 17 is a flow chart illustrating a substrate processing
method by a substrate processing apparatus according to the present
embodiment. The substrate processing method by the substrate
processing apparatus according to the present embodiment is the
same as the flow charts illustrated in FIGS. 13, and 16 except the
cleaning liquid feeding step (S112). FIG. 17 therefore illustrates
only a cleaning liquid feeding step (S112) in the present flow
chart.
[0159] As illustrated in FIG. 17, a cleaning liquid ejected from a
nozzle 162 is fed to a rear side of a substrate W, thereby cleaning
the central area of the rear side of the substrate W (step of
feeding inside cleaning liquid: S112a).
[0160] Subsequently, ejecting the cleaning liquid from the nozzle
162 is continued, and ejecting a cleaning liquid from a nozzle 172
is started. The respective cleaning liquids from the nozzles 162
and 172 may be fed to the rear side of the substrate W at the same
time, thereby cleaning the central area to the peripheral area of
the rear side and the edge of the substrate W at the same time
(step of cleaning liquid feeding to both sides: S112b1).
[0161] As described with reference to FIGS. 16 and 17, it is
preferable that the peripheral area of the rear side of the
substrate W and the edge of the substrate W be cleaned after the
step of feeding inside cleaning liquid (S112a). This enables
efficient cleaning and protect of the rear side of the substrate W
in a period of time, after the filler ejecting step (S110a), during
which an inside of a chamber 110 is easily caught in a contaminated
atmosphere, and/or various liquids are easily returned by first and
second guards 193 and 194. Cleaning the central area of the rear
side of the substrate W before cleaning the peripheral area of the
rear side and the edge of the substrate W makes it possible to keep
the cleaning liquid, spreading toward the upper side of the
substrate W, clean.
[0162] Note that although the step of feeding inside cleaning
liquid (S112a) is performed after the drying step (S110d) in the
above-described explanation with reference to FIGS. 16 and 17, the
present embodiment is not limited to this. The step of feeding
inside cleaning liquid (S112a) may be performed at the same time
with the drying step (S110d). For example, the step of feeding
outside cleaning liquid (S112b) may be performed, after the
permeation step (S110c) is performed and then the step of feeding
inside cleaning liquid (S112a) is performed at the same time with
the drying step (S110d).
[0163] Although the step of feeding inside cleaning liquid (S112a)
is performed after the drying step (S110d) in the above-described
explanation with reference to FIGS. 16 and 17, the present
embodiment is not limited to this. The step of feeding inside
cleaning liquid (S112a) may be performed before the drying step
(S110d). For example, the step of feeding outside cleaning liquid
(S112b) may be performed after the step of feeding inside cleaning
liquid (S112a) is performed at the same time with the permeation
step (S110c), and subsequently the drying step (S110d) is
performed.
[0164] Note that in the substrate processing apparatus 100, an
inert gas is preferably fed to the rear side of the substrate W
after a chemical liquid is fed to the substrate W. It is
particularly preferable that the inert gas be fed to the rear side
of the substrate W from a point in time before the filler is fed to
the substrate W to a point in time when the cleaning liquid feeding
step ends.
[0165] A substrate processing apparatus 100 including an inert gas
feeder that feeds an inert gas to a rear side of a substrate W will
next be described with reference to FIG. 18. FIG. 18 is a schematic
illustration of the substrate processing apparatus 100 according to
the present embodiment. The substrate processing apparatus 100
illustrated in FIG. 18 has a configuration similar to that of the
substrate processing apparatus 100 described with reference to FIG.
1 except that the inert gas feeder 180 that feeds the inert gas to
a cover plate 129, and the rear side of the substrate W is further
provided. Duplicate descriptions are therefore omitted for the
purpose of avoiding redundancy.
[0166] The inert gas feeder 180 feeds the inert gas to the rear
side of the substrate W. Examples of the inert gas include nitrogen
gas.
[0167] The inert gas feeder 180 includes a gas inlet 182, a feed
pipe 184, and a valve 186. The inert gas ejected from the gas inlet
182 is fed to the rear side of the substrate W while passing
between the substrate W and the cover plate 129. The gas inlet 182
is annular in shape, and provided in a periphery of a rotating
shaft 122 of a substrate holder 120. The feed pipe 184 is joined to
the rotating shaft 122 to communicate with the gas inlet 182. The
gas inlet 182 is located at the tip of the rotating shaft 122. The
inert gas is fed into the feed pipe 184 from a feed source. The
feed pipe 184 is provided with the valve 186. The valve 186 opens
and shuts an opening in a passageway inside the feed pipe 184.
[0168] FIG. 19 is a flow chart illustrating a substrate processing
method of feeding the inert gas, according to the present
embodiment. As illustrated in FIG. 19, the inert gas is fed to the
rear side of the substrate W from a start of a chemical liquid
processing step (S106) to an end of a cleaning liquid feeding step
(S112) (inert gas feeding step: S105).
[0169] The inert gas is fed to the rear side of the substrate W in
the chemical liquid processing step (S106), an organic solvent
feeding step (S108), a filler feeding step (S110), and the cleaning
liquid feeding step (S112). In particular, feeding the inert gas to
the rear side of the substrate W in the filler feeding step (S110),
and the cleaning liquid feeding step (S112) makes it possible to
prevent filler from easily adhering to the rear side of the
substrate W.
[0170] Note that in the explanation described with reference to
FIG. 19, the inert gas is fed from the start of the chemical liquid
processing step (S106) to the end of the cleaning liquid feeding
step (S112). An amount of the inert gas may be constant or varied
for a period of time from the start of the chemical liquid
processing step (S106) to the end of the cleaning liquid feeding
step (S112).
[0171] FIG. 20 is a flow chart illustrating a substrate processing
method of varying an amount of an inert gas, according to the
present embodiment. As illustrated in FIG. 20, the inert gas is fed
at a first flow rate that is comparatively low in a chemical liquid
processing step (S106) and an organic solvent feeding step
(S108).
[0172] The inert gas is subsequently fed at a second flow rate
higher than the first flow rate in a filler feeding step (S110)
(inert gas feeding step: S105b). A flow rate of the inert gas is
set to a third flow rate in a cleaning liquid feeding step (S112)
(inert gas feeding step: S105c). The third flow rate of the inert
gas in the cleaning liquid feeding step (S112) may be higher than
the second flow rate of the inert gas in the filler feeding step
(S110).
[0173] The flow rate of the inert gas in the filler feeding step
(S110) being comparatively lower than the flow rate of the inert
gas in the cleaning liquid feeding step (S112) make it possible to
successfully feed filler to an upper side of a substrate W. The
flow rate of the inert gas in the cleaning liquid feeding step
(S112) being comparatively high also makes it possible to prevent
the filler from easily adhering to the rear side of the substrate
W.
[0174] Note that the second flow rate of the inert gas in the
filler feeding step (S110) may equal the third flow rate of the
inert gas in the cleaning liquid feeding step (S112).
[0175] Note that although, in the explanation described with
reference to FIGS. 7 to 9C, and 15A to 15C, each substrate
processing apparatus 100 includes a nozzle 162 that ejects a
cleaning liquid for cleaning the central area of a rear side of a
substrate W to be processed, and a nozzle 172 that ejects a
cleaning liquid for cleaning the peripheral area of the rear side
and an edge of the substrate W, the present embodiment is not
limited to this. In a substrate processing apparatus 100 according
to the present embodiment, not only the central area of a rear side
of a substrate W but also the peripheral side of the rear side and
an edge of the substrate W may be cleaned by a cleaning liquid
ejected from the nozzle 162 that moves relative to the substrate
W.
[0176] A substrate processing apparatus 100 having a movable nozzle
162 will next be described with reference to FIG. 21. FIG. 21 is a
schematic illustration of the substrate processing apparatus 100
according to the present embodiment. The substrate processing
apparatus 100 has a configuration similar to the substrate
processing apparatus 100 described above with reference to FIG. 1
except that a first cleaning liquid feeder 160 further includes a
nozzle mover 168 that moves the nozzle 162. Duplicate descriptions
are therefore omitted for the purpose of avoiding redundancy.
[0177] The first cleaning liquid feeder 160 includes the nozzle
mover 168 in addition to the nozzle 162, a feed pipe, and a valve
166. The nozzle mover 168 moves the nozzle 162. The nozzle mover
168 includes a motor, and a cylinder.
[0178] The nozzle mover 168 moves the nozzle 162 in a horizontal
direction. The nozzle 162 ejects a cleaning liquid to the central
area of a rear side of a substrate W. The nozzle 162 is moved
relative to the substrate W by the nozzle mover 168, and then
ejects a cleaning liquid to the peripheral area of the rear side of
the substrate W.
[0179] The nozzle mover 168 may further include a temperature
adjuster that adjusts a temperature of a cleaning liquid to be
ejected from the nozzle 162. For example, the nozzle mover 168
includes a heater. The temperature of the cleaning liquid to be
ejected from the nozzle 162 may be increased by the heater.
[0180] Note that although it has been explained with reference to
FIG. 21 that the nozzle mover 168 moves one nozzle 168, the present
embodiment is not limited to this. In the case where nozzles 162
are provided as described with reference to FIGS. 6A, 6B, 8, and 9A
to 9C, it is preferable that the nozzle mover 168 individually move
the nozzles 162.
[0181] A substrate processing method by a substrate processing
apparatus 100 according to the present embodiment will next be
described with reference to FIGS. 16, 21, and 22A to 22D. FIGS. 22A
to 22C are schematic illustrations depicting substrate processing
by the substrate processing apparatus 100 according to the present
embodiment.
[0182] As illustrated in FIG. 22A, a nozzle 152 ejects filler to a
substrate W (filler ejecting step: S110a). At this moment, a
substrate holder 120 rotates the substrate W at the first
rotational speed.
[0183] As illustrated in FIG. 22B, the substrate holder 120 rotates
the substrate W at the first rotational speed to determine a
thickness of a film derived from the filler (film thickness
determining step: S110b), rotates the substrate W at the second
rotational speed to cause the filler to permeate the substrate W
(permeation step: S110c), and then rotates the substrate W at the
third rotational speed to dry the substrate W (drying step: S110d).
Note that any one the film thickness determining step (S110b), the
permeation step (S110c), and the drying step (S110d) may be
omitted.
[0184] As illustrated in FIG. 22C, a nozzle 162 feeds a cleaning
liquid to a rear side of the substrate W (step of feeding inside
cleaning liquid: S112a). At this moment, a nozzle mover 168 has
moved the nozzle 162 to the central area of the rear side of the
substrate W, and in this state the nozzle 162 ejects the cleaning
liquid to the central area of the rear side of the substrate W.
Thus, the cleaning liquid ejected from the nozzle 162 is fed to the
central area of the rear side of the substrate W, thereby cleaning
the central area of the rear side of the substrate W. At this
moment, the substrate holder 120 may rotate the substrate W at the
fourth rotational speed.
[0185] As illustrated in FIG. 22C, the nozzle 162 feeds a cleaning
liquid to the peripheral area of the rear side of the substrate W
(step of feeding outside cleaning liquid: S112b). The nozzle mover
168 has moved the nozzle 162 in a direction from the central area
toward the peripheral area of the rear side of the substrate W,
during which the nozzle 162 ejects the cleaning liquid to the rear
side of the substrate W. Thus, the cleaning liquid ejected from the
nozzle 162 is fed from the central area to the peripheral area of
the rear side of the substrate W, thereby cleaning the central area
to the peripheral area of the rear side of the substrate W, and an
edge of the substrate W. At this moment, the substrate holder 120
may rotate the substrate W at the fifth rotational speed. The
nozzle mover 168 may also move the nozzle 162 up to the edge of the
substrate W.
[0186] The embodiment of the present invention has been described
so far with reference to FIGS. 1 to 22D. The present invention is
however not limited to the above embodiment and may be implemented
in various manners within a scope not departing from the gist of
the present invention. Furthermore, various inventions may be
formed by appropriately combining elements of configuration
disclosed in the above embodiment. For example, some of the
elements of configuration disclosed in the embodiment may be
removed. In addition, elements of configuration from different
embodiments may be appropriately combined. The drawings
schematically illustrate main elements of configuration to
facilitate understanding thereof. Aspects of the elements of
configuration illustrated in the drawings, such as thickness,
length, number and interval, may differ in practice for the sake of
convenience for drawing preparation. Furthermore, aspects of the
elements of configuration illustrated in the above embodiment, such
as material, shape, and dimension, are one example and are not
particularly limited. The elements of configuration may be
variously altered within a scope not substantially departing from
the configuration of the present invention.
* * * * *