U.S. patent application number 16/401042 was filed with the patent office on 2020-04-02 for wafers for use in aligning nanotubes and methods of making and using the same.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Gerben Doornbos, Matthias Passlack, Marcus Johannes Henricus van Dal, Timothy Vasen.
Application Number | 20200106014 16/401042 |
Document ID | / |
Family ID | 69945227 |
Filed Date | 2020-04-02 |
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United States Patent
Application |
20200106014 |
Kind Code |
A1 |
Vasen; Timothy ; et
al. |
April 2, 2020 |
WAFERS FOR USE IN ALIGNING NANOTUBES AND METHODS OF MAKING AND
USING THE SAME
Abstract
Provided herein are wafers that can be used to align carbon
nanotubes, as well as methods of making and using the same. Such
wafers include alignment areas that have four sides and a surface
charge, where the alignment areas are surrounded by areas that have
a surface charge of a different polarity. Methods of the disclosure
may include depositing and selectively etching a number of
hardmasks on a substrate. The described methods may also include
depositing a carbon nanotube on such a wafer.
Inventors: |
Vasen; Timothy; (Tervuren,
BE) ; Doornbos; Gerben; (Kessel-Lo, BE) ; van
Dal; Marcus Johannes Henricus; (Linden, BE) ;
Passlack; Matthias; (Huldenberg, BE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Family ID: |
69945227 |
Appl. No.: |
16/401042 |
Filed: |
May 1, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62737792 |
Sep 27, 2018 |
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/003 20130101;
H01L 51/0508 20130101; H01L 23/544 20130101; C23C 16/45525
20130101; H01L 51/0003 20130101; C23C 16/56 20130101; H01L
2223/54426 20130101; H01L 51/0048 20130101 |
International
Class: |
H01L 51/00 20060101
H01L051/00; C23C 16/455 20060101 C23C016/455; C23C 16/56 20060101
C23C016/56; H01L 23/544 20060101 H01L023/544 |
Claims
1. A wafer, comprising: a plurality of alignment areas having a
first surface charge of a first polarity, each alignment area of
the plurality of alignment areas having four edges, a first
diagonal between a first vertex and a second vertex, and a second
diagonal between a third vertex and a fourth vertex, the first
diagonal extending in a first direction, the second diagonal being
shorter than the first diagonal; and a plurality of spacing areas
having a second surface charge of a second polarity that is
different than the first polarity, the four edges of each alignment
area of the plurality of alignment areas abutting at least one
spacing area of the plurality of spacing areas.
2. The wafer of claim 1, wherein each spacing area of the plurality
of spacing areas has four edges and a first diagonal between a
first vertex and a second vertex, and a second diagonal between a
third vertex and a fourth vertex, the first diagonal extending in
the first direction, the second diagonal extending in the second
direction.
3. The wafer of claim 2, wherein the second diagonal of each
spacing area is shorter than the first diagonal.
4. The wafer of claim 1, wherein the first polarity is
positive.
5. The wafer of claim 1, wherein the plurality of alignment areas
comprises: a first alignment area; a second alignment area, the
first diagonal of the second alignment area being aligned with the
first diagonal of the first alignment area; and a third alignment
area, the first diagonal of the third alignment area being aligned
with the first diagonal of the first alignment area and the first
diagonal of the second alignment area.
6. The wafer of claim 5, wherein the second vertex of the first
alignment area is in contact with the first vertex of the second
alignment area, and the second vertex of the second alignment area
is in contact with the first vertex of the third alignment
area.
7. The wafer of claim 5, further comprising a fourth alignment area
adjacent to the first alignment area, the fourth alignment area
having the first surface charge, four edges, a first diagonal
between a first vertex and a second vertex, and a second diagonal
between a third vertex and a fourth vertex, the second diagonal
being shorter than the first diagonal and aligned with the second
diagonal of the first alignment area.
8. The wafer of claim 7, wherein the fourth vertex of the first
alignment area is in contact with the third vertex of the fourth
alignment area.
9. The wafer of claim 7, wherein a distance between the first
diagonal of the first alignment area and the first diagonal of the
fourth alignment area ranges from about 5 nanometers (nm) to about
10 nm.
10. A method, comprising: providing a first wafer comprising: a
semiconductor substrate; a first insulating layer of a first
material on the semiconductor substrate; a second insulating layer
of a second material, which is different than the first material,
on the first insulating layer; a first hardmask on second
insulating layer; providing a patterned first hardmask, the
patterned first hardmask including openings, the openings exposing
a portion of the second insulating layer; etching the exposed
portion of the second insulating layer, removing the patterned
first hardmask; and depositing the first material on exposed
portions of the first insulating layer to provide a second wafer
comprising: a plurality of first areas of the second material, each
first area of the plurality of first areas having four edges and a
first diagonal between a first vertex and a second vertex, the
first diagonal extending in a first direction; and a plurality of
second areas of the first material, the four edges of each first
area of the plurality of first areas abutting at least one second
area of the plurality of second areas.
11. The method of claim 10, further comprising: depositing the
first insulating layer on the semiconductor substrate, depositing
the second insulating layer on the first insulating layer;
depositing the first hardmask on the second insulating layer; and
depositing second and third hardmasks on the second insulating
layer.
12. The method of claim 10, further comprising: depositing the
first hardmask on the second insulating layer; depositing a second
hardmask on the first hardmask; and depositing a third hardmask on
the second hardmask.
13. The method of claim 10, wherein the plurality of first areas
each have a second diagonal between a third vertex and a fourth
vertex, the second diagonal being shorter than the first
diagonal.
14. The method of claim 13, wherein the plurality of second areas
each have four edges, a first diagonal between a first vertex and a
second vertex, and a second diagonal between a third vertex and a
fourth vertex, the second diagonal being shorter than the first
diagonal.
15. The method of claim 10, further comprising forming a coplanar
surface by planarizing the wafer.
16. A method, comprising: providing a first wafer comprising: a
plurality of alignment areas having a first surface charge of a
first polarity, each alignment area of the plurality of alignment
areas having four edges, a first diagonal between a first vertex
and a second vertex, and a second diagonal between a third vertex
and a fourth vertex, the first diagonal extending in a first
direction, the second diagonal being shorter than the first
diagonal; and a plurality of spacing areas having a second surface
charge of a second polarity that is different than the first
polarity, the four edges of each alignment area of the plurality of
alignment areas abutting at least one spacing area of the plurality
of spacing areas; and depositing a first carbon nanotube onto the
first wafer such that the first carbon nanotube is positioned on a
first alignment area of the plurality of alignment areas, the first
carbon nanotube extending in the first direction along the first
diagonal of the first alignment area.
17. The method of claim 16, further comprising depositing a second
carbon nanotube onto the first wafer adjacent to the first carbon
nanotube, the second carbon nanotube being positioned on a second
alignment area of the plurality of alignment areas, the second
carbon nanotube being extending in the first direction along the
first diagonal of the second alignment area, a distance between the
first diagonal of the first alignment area and the first diagonal
of the second alignment area being no more than about 10
nanometers.
18. The method of claim 16, further comprising depositing a
plurality of carbon nanotubes on the first wafer such that each
carbon nanotube of the plurality of carbon nanotubes is positioned
on a respective alignment area of the plurality of alignment areas,
each carbon nanotube extending in the first direction along a
respective first diagonal of the respective alignment area.
19. The method of claim 16, further comprising: applying thermal
release tape to a surface of the first wafer and the first carbon
nanotube; and removing the thermal release tape and the first
carbon nanotube from the first wafer.
20. The method of claim 19, further comprising: positioning the
first carbon nanotube and the thermal release tape on a second
wafer; releasing the first carbon nanotube from the thermal release
tape; and removing the thermal release tape from the second wafer
and the first carbon nanotube.
Description
BACKGROUND
[0001] Recently, carbon nanotubes have been used in scaled field
effect transistors (FETs). Carbon nanotubes have a cylindrical
geometry, a diameter of about 1 nanometer, and may provide
excellent electrical and mechanical properties. Various methods of
placing carbon nanotubes on a substrate have been used. Some
methods result in random placement, orientation, or bundling.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0002] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0003] FIGS. 1A and 1B illustrate a wafer of the disclosure, in
accordance with some embodiments.
[0004] FIGS. 2A-2C illustrate an exemplary alignment area, spacing
area, and arrangement of alignment areas and spacing areas, in
accordance with some embodiments.
[0005] FIGS. 3A-3C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0006] FIGS. 4A-4C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0007] FIGS. 5A-5C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0008] FIGS. 6A-6C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0009] FIGS. 7A-7C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0010] FIGS. 8A-8C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0011] FIGS. 9A-9C illustrate a step of a method of forming a wafer
of the disclosure, in accordance with some embodiments.
[0012] FIGS. 10A-10C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0013] FIGS. 11A-11C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0014] FIGS. 12A-12C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0015] FIGS. 13A-13C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0016] FIGS. 14A-14C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0017] FIGS. 15A-15C illustrate a step of a method of forming a
wafer of the disclosure, in accordance with some embodiments.
[0018] FIG. 16 illustrates a wafer of the disclosure, in accordance
with some embodiments.
[0019] FIG. 17 illustrates an enlarged view of a spacing area, in
accordance with some embodiments.
[0020] FIG. 18 illustrates a method of aligning a carbon nanotube
on a wafer of the disclosure, in accordance with some
embodiments.
[0021] FIG. 19 shows the results of a calculation of energy versus
position for a CNT on a wafer of the present disclosure.
[0022] FIGS. 20A and 20B illustrate a method of aligning carbon
nanotubes on two wafers of the disclosure, in accordance with some
embodiments.
DETAILED DESCRIPTION
[0023] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0024] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0025] Embodiments described herein include wafers for use in
aligning a carbon nanotube (CNT), as well as methods of making and
using the same. Such wafers generally include first areas arranged
with second areas, the first and second areas having surface
charges of different polarities. The arrangement of the first and
second areas on a wafer can be chosen in order to produce a desired
arrangement of CNTs.
[0026] As described in more detail below, embodiments of the
methods of the disclosure include forming a wafer as described
herein. In some embodiments, methods of the disclosure include
applying a series of hardmasks onto a substrate and selectively
removing portions of the hardmasks to produce the desired
arrangement of the first and second areas.
[0027] Further embodiments of the described methods include
depositing and aligning one or more CNTs on a surface of a wafer of
the disclosure. The described wafers and methods of using the same
can produce a highly ordered arrangement of CNTs. Such an
arrangement reduces bundling and allows for lithographically
defining the distance between individual CNTs (i.e., CNT to CNT
pitch). By producing such an ordered arrangement of CNTs, the
variability in the number of CNTs in a single transistor is
reduced.
[0028] The CNTs, once aligned, can be transferred to a second wafer
and used to form a transistor or other device, as described herein.
Additionally, once the CNTs are removed, the wafer of the present
disclosure may be used to align additional CNTs.
[0029] FIG. 1A illustrates a perspective view of a wafer of the
disclosure, according to some embodiments. FIG. 1B shows a top down
view of the wafer of FIG. 1A. As shown in FIG. 1A, a wafer 10
includes a substrate 5. Any suitable substrate may be used. In
embodiments, substrate 5 is a semiconductor material, e.g., silicon
(Si), germanium (Ge), a SiGe alloy, and the like. In some
embodiments, the substrate 5 may comprise a compound semiconductor.
Examples of compound semiconductors include Group IV-IV compound
semiconductors, such as silicon carbide (SiC) and SiGe; Group III-V
compound semiconductors such as gallium arsenide (GaAs), gallium
phosphide (GaP), gallium nitride (GaN), indium phosphide (InP),
indium arsenide (InAs), indium antimonide (InSb), gallium arsenide
phosphide (GaAsP), aluminium gallium nitride (AlGaN), aluminium
indium arsenide (AlInAs), aluminium gallium arsenide (AlGaAs),
gallium indium arsenide (GaInAs), gallium indium phosphide (GaInP),
gallium indium arsenide phosphide (GaInAsP); or combinations
thereof. In some embodiments, the substrate 5 is a silicon-on
insulator (SOI) substrate. Amorphous substrates, such as amorphous
Si or amorphous SiC, or insulating material, such as a silicon
oxide may also be used as the substrate 5.
[0030] In various embodiments, a wafer 10 includes one or more
layers 20 formed on the top surface of the substrate 5. In some
embodiments, the one or more layers 20 are made of an insulating
material. In various embodiments, the top layer includes more than
one material. In the embodiment illustrated in FIG. 1A, the wafer
10 includes two layers 20a and 20b, although more or fewer layers
may be present.
[0031] A wafer 10 has a top surface 15 that includes at least one
alignment area 30. In embodiments, the at least one alignment area
30 is in a layer 20 on the substrate 5. In some embodiments, the at
least one alignment area 30 is in the substrate 5.
[0032] Each alignment area 30 has a surface charge that has a
polarity. In some embodiments, an alignment area 30 has a positive
charge. In other embodiments, an alignment area 30 has a negative
charge. In embodiments, the surface charge of each alignment area
30 has the same polarity. In some embodiments, the surface charge
of each alignment area 30 is substantially the same.
"Substantially," as used herein means that a first value is within
.+-.30% of a second value. In some embodiments, substantially means
that a first value is within .+-.25% of a second value. In other
embodiments, substantially means that a first value is within
.+-.20% of a second value. In other embodiments, substantially
means that a first value is within .+-.15% of a second value. In
other embodiments, substantially means that a first value is within
.+-.10% of a second value. In other embodiments, substantially
means that a first value is within .+-.5% of a second value. In
other certain embodiments, the surface charge of a first alignment
area is the same as a surface charge of a second alignment area. In
particular embodiments, the surface charge of each alignment area
is the same.
[0033] A surface charge may be produced by any suitable methods. In
various embodiments, an alignment area is formed of a different
material than a spacing area. In some embodiments, an alignment
area is a metal oxide. For example, an alignment area may be
HfO.sub.2 and a spacing area may be SiO.sub.2.
[0034] In some such embodiments, a surface charge is produced by
depositing a charged molecule onto an alignment area. In some
embodiments, the charged molecule is covalently bound to the
alignment area. In other embodiments, the charged molecule is
electrostatically bound to the alignment area. In further
embodiments, the charged molecule is bound to the alignment area by
hydrogen bonding.
[0035] In embodiments, the alignment area is a metal oxide (e.g.,
Al.sub.2O.sub.3) and the charged molecule comprises hydroxamic
acid. In a specific embodiment, the alignment area is HfO.sub.2,
and the charged molecule is selected from:
##STR00001##
[0036] In such embodiments, a charged molecule is applied in
solution to a substrate having alignment areas of HfO.sub.2 and
spacing areas of SiO.sub.2. In embodiments where the charged
molecule contains a hydroxamic acid end group, which are known to
self-assemble on metal oxide surfaces but not on SiO.sub.2
surfaces, the charged molecules will bind with the HfO.sub.2 and
are thus deposited onto the surface of the alignment area.
[0037] In other embodiments, a surface charge is produced by
treating an alignment area (e.g., of Si, SiN, etc.) with hydrogen
fluoride (HF). In such embodiments, the HF removes the native oxide
of the alignment area (e.g., SiN), which differentiates the surface
of the alignment area from the spacing areas (e.g., SiO.sub.2).
[0038] In other embodiments, a surface charge is produced using
electron beam lithographic methods.
[0039] An illustrative schematic of an alignment area 30 in
accordance with some embodiments is shown in FIG. 2A. In various
embodiments, an alignment area 30 is a regular polygon. In
embodiments, an alignment area 30 has four vertices 40a-40d and
four edges 45a-45d. In other words, in some embodiments, an
alignment area 30 is a quadrilateral. In various embodiments, each
edge of the four edges 45a-45d is the substantially the same
length. In some embodiments, an alignment area 30 has a diamond
shape.
[0040] Each vertex 40a-40d has an interior angle 50a-50d,
respectively. In embodiments, interior angles 50a and 50c each
independently range from about 0.degree. to about 90.degree..
"About," as used herein, denotes that the actual value may be
somewhat more or somewhat less than the stated value or range, to
within .+-.20% of the stated value. In other embodiments, about
means that the actual value is within .+-.15% of the stated value.
In other embodiments, about means that the actual value is within
.+-.10% of the stated value. In other embodiments, about means that
the actual value is within .+-.5% of the stated value. In other
embodiments, about means that the actual value is within .+-.1% of
the stated value.
[0041] In embodiments, interior angles 50a and 50c each
independently range from about 30.degree. to about 60.degree.. In
embodiments, interior angles 50a and 50c each independently range
from about 40.degree. to about 50.degree.. In embodiments, interior
angles 50a and 50c are each independently about 45.degree.. In
embodiments, interior angles 50a and 50c are substantially the
same.
[0042] In embodiments, interior angles 50b and 50d each
independently range from about 90.degree. to about 180.degree.. In
embodiments, interior angles 50b and 50d each independently range
from about 105.degree. to about 165.degree.. In embodiments,
interior angles 50b and 50d each independently range from about
120.degree. to about 150.degree.. In embodiments, interior angles
50b and 50d are each independently about 135.degree.. In
embodiments, interior angles 50b and 50d are substantially the
same.
[0043] In embodiments, an alignment area 30 has a first diagonal
55a between a first vertex 40a and a second vertex 40c. In some
embodiments, the first diagonal 55a ranges from about 6 nanometers
(nm) to about 42 nm. In some embodiments, the first diagonal 55a
ranges from about 10 nm to about 32 nm. In some embodiments, the
first diagonal 55a is no more than 21 nm. In some embodiments, the
first diagonal 55a is less than 21 nm. In some embodiments, the
first diagonal 55a ranges from about 10 nm to about 21 nm.
[0044] In embodiments, an alignment area 30 has a second diagonal
55b between a third vertex 40b and a fourth vertex 40d. In various
embodiments, the second diagonal 55b is transverse to the first
diagonal 55a. In some embodiments, the second diagonal 55b is
substantially perpendicular to the first diagonal 55a. In some
embodiments, the second diagonal 55b is shorter than the first
diagonal 55a. In some embodiments, the second diagonal 55b ranges
from about 3 nanometers (nm) to about 20 nm. In some embodiments,
the second diagonal 55b ranges from about 5 nm to about 15 nm. In
some embodiments, the second diagonal 55b is no more than 10 nm. In
some embodiments, the second diagonal 55b is less than 10 nm. In
some embodiments, the second diagonal 55b ranges from about 5 nm to
about 10 nm.
[0045] An illustrative schematic of a spacing area 60 in accordance
with some embodiments is shown in FIG. 2B. In various embodiments,
a spacing area is a regular polygon. In some embodiments, a spacing
area 60 has at least three edges. As shown in FIG. 2B, a spacing
area 60 may have four edges. In some embodiments, a spacing area 60
has more than four edges. In various embodiments, each of the edges
is substantially the same length. In embodiments, a spacing area 60
has a diamond shape.
[0046] In embodiments, a spacing area 60 has four vertices 70a-70d.
Each vertex 70a-70d has an interior angle 80a-80d, respectively. In
some embodiments, interior angles 80a and 80c each independently
range from about 0.degree. to about 90.degree.. In embodiments,
interior angles 80a and 80c each independently range from about
30.degree. to about 60.degree.. In embodiments, interior angles 80a
and 80c each independently range from about 40.degree. to about
50.degree.. In embodiments, interior angles 80a and 80c are each
independently about 45.degree.. In some embodiments, interior
angles 80a and 80c are substantially the same.
[0047] In embodiments, interior angles 80b and 80d each
independently range from about 90.degree. to about 180.degree.. In
embodiments, interior angles 80b and 80d each independently range
from about 105.degree. to about 165.degree.. In embodiments,
interior angles 80b and 80d each independently range from about
120.degree. to about 150.degree.. In embodiments, interior angles
80b and 80d are each independently about 135.degree.. In some
embodiments, interior angles 80b and 80d are substantially the
same.
[0048] In embodiments, a spacing area 60 has a first diagonal 85a
between a first vertex 70a and a second vertex 70c. In some
embodiments, the first diagonal 85a ranges from about 6 nanometers
(nm) to about 42 nm. In some embodiments, the first diagonal 85a
ranges from about 10 nm to about 32 nm. In some embodiments, the
first diagonal 85a is no more than 21 nm. In some embodiments, the
first diagonal 85a is less than 21 nm. In some embodiments, the
first diagonal 85a ranges from about 10 nm to about 21 nm.
[0049] In some embodiments, an alignment area 60 has a second
diagonal 85b between a third vertex 70b and a fourth vertex 70d. In
various embodiments, the second diagonal 85b is transverse to the
first diagonal 85a. In some embodiments, the second diagonal 85b is
substantially perpendicular to the first diagonal 85a. In some
embodiments, the second diagonal 85b is shorter than the first
diagonal 85a. In some embodiments, the second diagonal 85b ranges
from about 3 nanometers (nm) to about 20 nm. In some embodiments,
the second diagonal 85b ranges from about 5 nm to about 15 nm. In
some embodiments, the second diagonal 85b is no more than 10 nm. In
some embodiments, the second diagonal 85b is less than 10 nm. In
some embodiments, the second diagonal 85b ranges from about 5 nm to
about 10 nm.
[0050] FIG. 2C illustrates an exemplary arrangement of alignment
areas 30a-30i and spacing areas 60a-60h on a top surface of a wafer
10, in accordance with some embodiments. In various embodiments, a
plurality of alignment areas 30a-30i is arranged with a plurality
of spacing areas 60a-60h in an alternating pattern.
[0051] In various embodiments, each alignment area 30a-30i has four
edges, as described above. In such embodiments, each edge of the
four edges may abut a spacing area 60. In other words, the edges of
one alignment area 30 do not contact the edges of another alignment
area 30. Thus, in particular embodiments, an alignment area 30 is
surrounded by one or more spacing areas 60.
[0052] Each spacing area 60a-60h has a surface charge that is
different than the surface charge of each alignment area 30a-30i.
Any suitable technique, such as those described above with regard
to alignment areas, may be used to provide the differences in
surface charge between spacing areas 60a-60h and alignment areas
30a-30i.
[0053] In various embodiments, a surface charge of one or more
spacing areas 60a-60h has a different polarity than a surface
charge of any one or more alignment areas 30a-30i, which can be
achieved using the techniques described above. In some embodiments,
one or more spacing areas 60a-60h have a positive charge and one or
more alignment areas 30a-30i have a negative charge. In other
embodiments, one or more spacing areas 60a-60h have a negative
charge and one or more alignment areas 30a-30i have a positive
charge. In embodiments, the surface charge of each spacing area has
the same polarity. In some embodiments, the surface charge of each
spacing area is substantially the same. In certain embodiments, the
surface charge of a first spacing area is the same as a surface
charge of a second spacing area. In particular embodiments, the
surface charge of each spacing area is substantially the same.
[0054] Accordingly, embodiments of the present application include
wafers, comprising: (i) a plurality of alignment areas having a
first surface charge of a first polarity, each alignment area of
the plurality of alignment areas having a first diagonal between a
first vertex and a second vertex, the first diagonal extending in a
first direction; and (ii) a plurality of spacing areas having a
second surface charge of a second polarity that is different than
the first polarity, the four edges of each alignment area of the
plurality of alignment areas abutting at least one spacing area of
the plurality of spacing areas.
[0055] In various embodiments, adjacent alignment areas are
arranged such that a vertex of a first alignment area 30a contacts
a vertex of a second alignment area 30d. In various embodiments, a
first vertex 40c of a first alignment area 30a contacts a first
vertex 40a of a second alignment area 30d. In embodiments, a first
vertex 40b of a first alignment area 30a contacts a first vertex
40d of a third alignment area 30b. In some embodiments, the four
vertices of an alignment area 30e contact four other alignment
areas 30b, 30f, 30h, 30d.
[0056] In some embodiments, at least three alignment areas 30a,
30d, 30g are aligned along a common diagonal 95a. In such
embodiments, a first vertex 40c of a first alignment area 30a
contacts a first vertex 40a of a second alignment area 30d, and a
second vertex 40e of the second alignment area 30d contacts a first
vertex 40f of a third alignment area 30g. In various embodiments,
four or more alignment areas (e.g., five or more alignment areas,
six or more alignment areas, seven or more alignment areas, 10 or
more alignment areas, 20 or more alignment areas, etc.) are aligned
along the common diagonal 95a.
[0057] In embodiments, a first subset of the alignment areas 30a,
30d, 30g are aligned along a first common diagonal 95a and a second
subset of the alignment areas 30b, 30e, 30h are aligned along a
second common diagonal 95b. In embodiments, the first diagonal 95a
is substantially parallel to the second diagonal 95b.
[0058] In embodiments, two lines (e.g. the first common diagonal
95a and the second common diagonal 95b) are considered
substantially parallel if any two measurements between the first
line (e.g. the first common diagonal 95a) and the second line (e.g.
the second common diagonal 95b) are within .+-.20% of each other.
In some embodiments, two lines (e.g. the first common diagonal 95a
and the second common diagonal 95b) are considered substantially
parallel if any two measurements between the first line and the
second line are within .+-.15% of each other. In some embodiments,
two lines (e.g. the first common diagonal 95a and the second common
diagonal 95b) are considered substantially parallel if any two
measurements between the first line and the second line are within
.+-.10% of each other. In further embodiments, two lines (e.g. the
first common diagonal 95a and the second common diagonal 95b) are
considered substantially parallel if any two measurements between
the first line and the second line are within .+-.5% of each other.
In still further embodiments, two lines (e.g. the first common
diagonal 95a and the second common diagonal 95b) are considered
substantially parallel if any two measurements between the first
line and the second line are within .+-.1% of each other.
[0059] In some embodiments, the distance 90 between the first
common diagonal 95a and the second common diagonal 95b ranges from
about 3 nanometers (nm) to about 20 nm. In some embodiments, the
distance 90 between the first common diagonal 95a and the second
common diagonal 95b ranges from about 5 nm to about 15 nm. In some
embodiments, the distance 90 between the first common diagonal 95a
and the second common diagonal 95b is no more than 10 nm. In some
embodiments, the distance 90 between the first common diagonal 95a
and the second common diagonal 95b is less than 10 nm. In some
embodiments, the distance 90 between the first common diagonal 95a
and the second common diagonal 95b ranges from about 5 nm to about
10 nm.
[0060] Embodiments of the present disclosure further include
methods of forming a wafer as described herein. Accordingly,
embodiments of the present disclosure include a method including
forming a wafer comprising: (i) a plurality of alignment areas
having a first surface charge of a first polarity, each alignment
area of the plurality of alignment areas having a first diagonal
between a first vertex and a second vertex, the first diagonal
extending in a first direction; and (ii) a plurality of spacing
areas having a second surface charge of a second polarity that is
different than the first polarity, the four edges of each alignment
area of the plurality of alignment areas abutting at least one
spacing area of the plurality of spacing areas
[0061] FIG. 3-FIG. 15 illustrate steps of a method of the
disclosure, in accordance with some embodiments. For each figure,
view A shows a perspective view, view B shows a top down view, and
view C shows a cross section along line A-A of view B. In
embodiments, the method illustrated is used to produce the wafer
shown in FIG. 1A and FIG. 1B.
[0062] FIG. 3A shows a layered intermediate wafer. As shown, the
layered intermediate wafer includes a substrate 5 and a first
insulating layer 100 of a first material on substrate 5. The first
insulating material may be any suitable insulator, such as a metal
oxide. In embodiments, the first insulating material is HfO.sub.2.
In some embodiments, methods of the present disclosure include
depositing the first insulating layer 100 on the substrate 5.
[0063] In some embodiments, a second insulating layer 110 of a
second insulating material is on the first insulating layer 100.
The second insulating material may be any suitable insulator. In
embodiments, the second insulating material is SiO.sub.2. In some
embodiments, methods of the present disclosure include depositing
the second insulating layer 110 on the first insulating layer
100.
[0064] In some embodiments, methods of the present disclosure
include depositing a plurality of hardmasks on an intermediate
wafer comprising a substrate 5, a first insulating layer 100 on the
substrate 5, and a second insulating layer 110 on the first
insulating layer 100.
[0065] In various embodiments, the plurality of hardmasks includes
a first hardmask 120. In some embodiments, a first hardmask 120 is
on the second insulating layer 110. The first hardmask 120 may be
any suitable material. Such a material will provide etch
selectivity between the first hardmask and one or more of the other
hardmask layers and insulating layers described herein using an
acceptable etchant. In various embodiments, the first hardmask 120
may be silicon dioxide, silicon nitride, amorphous silicon,
amorphous carbon, and the like. In some embodiments, methods of the
present disclosure include depositing the first hardmask 120 on the
second insulating layer 110.
[0066] As shown in FIG. 3A, a second hardmask 130 is on the first
hardmask 120. The second hardmask 130 may be any suitable material.
Such a material will provide etch selectivity between the second
hardmask and one or more of the other hardmask layers and
insulating layers described herein, using an acceptable etchant. In
various embodiments, the second hardmask 130 may be silicon
dioxide, silicon nitride, amorphous silicon, amorphous carbon, and
the like. In some embodiments, methods of the present disclosure
include depositing the second hardmask 130 on the first hardmask
120.
[0067] In some embodiments, a third hardmask 140 is on the second
hardmask 130. The third hardmask 140 may be any suitable material.
Such a material will provide etch selectivity between the third
hardmask 140 and one or more of the other hardmask layers and
insulating layers described herein using an acceptable etchant. In
various embodiments, the third hardmask 140 may be silicon dioxide,
silicon nitride, amorphous silicon, amorphous carbon, and the like.
In some embodiments, methods of the disclosure include depositing
the third hardmask 140 on the second hardmask 130.
[0068] In various embodiments, the third hardmask 140 is patterned
in a plurality of sections having edges that are substantially
parallel, as shown in FIGS. 3A-3C. Alternating sections are
selectively removed to expose portions 133a-133e of the second
hardmask 130. In various embodiments, the alternating sections are
selectively removed by etching.
[0069] As shown in FIG. 4A-4C, a fourth hardmask 150 is deposited
onto an intermediate wafer. In embodiments, the fourth hardmask 150
is deposited onto the remaining portions of the third hardmask 140
and the exposed portions of the second hardmask 133 (e.g.,
133a-133e). The fourth hardmask 150 may be any suitable material.
Such a material will provide etch selectivity between the fourth
hardmask and one or more of the other hardmask layers and
insulating layers described herein using an acceptable etchant. In
various embodiments, the fourth hardmask 150 may be silicon
dioxide, silicon nitride, amorphous silicon, amorphous carbon, and
the like.
[0070] As shown in FIGS. 5A-5C, the fourth hardmask 150 is
patterned in a plurality of sections having edges that are
substantially parallel. In various embodiments, the fourth hardmask
150 is patterned into sections in a direction that is transverse to
the patterning of the third hardmask 140. Alternating sections are
selectively removed to expose portions 135 (e.g., 135a-135d) of the
second hardmask 130 and portions 145 (e.g., 145a-145e) of the third
hardmask 140. In various embodiments, the alternating sections are
selectively removed by etching.
[0071] The exposed portions 135 of the second hardmask 130 are then
removed (e.g., etched), as shown in FIGS. 6A-6C. The removal of the
exposed portions 135 of the second hardmask 130 exposes portions
125 (e.g., 125a-125d) of the first hardmask 120. In various
embodiments, exposed portions 135 of the second hardmask 130 are
removed by etching.
[0072] As shown in FIGS. 7A-7C, a fifth hardmask 160 is deposited
on the exposed portions 125 of the first hardmask. In embodiments,
the deposition of the fifth hardmask 160 is a selective deposition
(e.g., area-selective atomic layer deposition, area-selective
epitaxy, etc.). The fifth hardmask 160 may be any suitable
material. In embodiments, the fifth hardmask 160 is TiN. In some
such embodiments, the fifth hardmask 160 is TiN and the first
hardmask is SiO.sub.2.
[0073] As shown in FIGS. 8A-8C, portions 137 (e.g., 137a-137d) of
the second hardmask 130 are exposed by removing (e.g., by etching)
exposed portions 145 of the third hardmask 140.
[0074] As shown in FIGS. 9A-9C, the fourth hardmask 150 is then
removed (e.g., etched) to expose portions 139 (e.g., 139a-139d) of
the second hardmask 130 and portions 147 (e.g., 147a-147e) of the
third hardmask 140.
[0075] The exposed portions 137, 139 of the second hardmask are
then removed (e.g., etched) to expose portions 127 (e.g.,
127a-127i) of the first hardmask 120, as shown in FIGS.
10A-10C.
[0076] As shown in FIGS. 11A-11C, the exposed portions 127 of the
first hardmask 120 are removed (e.g., etched) to expose portions
115 (e.g., 115a-115i) of the second insulating layer 110.
[0077] The fifth hardmask 160, the remaining portions of the third
hardmask 140, and the remaining portions of the second hardmask 130
are removed (e.g., etched) to expose portions 129 of the first
hardmask 120, as shown in FIGS. 12A-12C. In some embodiments, the
fifth hardmask 150, the remaining portions of the third hardmask
140, and the remaining portions of the second hardmask 130 are
removed in a single etching step. In other embodiments, the fifth
hardmask 150, the remaining portions of the third hardmask 140, and
the remaining portions of the second hardmask 130 are removed in
two or more etching steps.
[0078] As shown in FIGS. 13A-13C, the exposed portions 115 of the
second insulating layer 110 is removed (e.g., etched) to expose
portions 105 (e.g., 105a-105i) of the first insulating layer
100.
[0079] The remaining portions of the first hardmask 120 are then
removed (e.g., etched) to expose portions 117 of the second
insulating layer 110, as shown in FIGS. 14A-14C.
[0080] As shown in FIGS. 15A-15C, the first insulating material 107
is filled in the recesses between portions 117 of the second
insulating layer 110.
[0081] Accordingly, embodiments of the present disclosure include
methods comprising providing an intermediate wafer comprising: a
semiconductor substrate 5; a first insulating layer 100 on the
semiconductor substrate 5; a second insulating layer 110 on the
first insulating layer 100; a first hardmask 120 on second
insulating layer 110; a second hardmask 130 on the first hardmask
120; and a third hardmask 140 on the second hardmask 130; exposing
first portions 133 of the second hardmask 130 by removing first
portions of the third hardmask 140; depositing a fourth hardmask
150 on the third hardmask 140 and the first portions 133 of the
second hardmask 130; exposing second portions 135 of the second
hardmask 130 and second portions 145 of the third hardmask 140 by
removing first portions of the fourth hardmask 150; exposing first
portions 125 of the first hardmask 120 by removing the second
portions 135 of the second hardmask 130; depositing a fifth
hardmask 160 on the first portions 125 of the first hardmask 120;
exposing third portions 137 of the second hardmask 130 by removing
the second portions 145 of the third hardmask 140; exposing fourth
portions 139 of the second hardmask 130 and third portions 147 of
the third hardmask 140 by removing the fourth hardmask 150;
exposing second portions 127 of the first hardmask 120 by removing
third 137 and fourth 139 portions of the second hardmask 130;
exposing first portions 115 of the second insulating layer 110 by
removing the second portions 127 of the first hardmask 120;
exposing third portions 129 of the first hardmask 120 by removing
the second 130, third 140, and fifth 160 hardmasks; exposing first
portions 105 of the first insulating layer 100 by removing the
first portions 115 of the second insulating layer 110; exposing
second portions 117 of the second insulating layer 110 by removing
remaining portions of the first hardmask 120; and depositing a
first material 107 on the first portions 105 of the first
insulating layer 100. In various embodiments, the top surface of
the wafer is planarized. For example, the top surface of the wafer
can be planarized using chemical-mechanical planarization (CMP)
using techniques known in the art. Accordingly, portions 117 of the
second insulating layer 110 are co-planar with areas of the first
insulating material 107. In various embodiments, the areas of the
second insulating layer 110 are alignment areas 30 and areas of the
first insulating material 107 are spacing areas 60.
[0082] A further exemplary arrangement of a plurality of alignment
areas 30a-30m and a plurality of spacing areas 60a-60d on a surface
of a wafer is shown in FIG. 16. As described above, each alignment
area 30a-30m has four edges, each of which contacts a spacing area.
In various embodiments, an alignment area 30b, 30d, 30f-30h, 30j,
301 contacts two spacing areas. In various embodiments, an
alignment area 30a, 30c, 30e, 30i, 30k, 30m contacts four spacing
areas.
[0083] An exemplary spacing area 60 is shown in FIG. 17. In such
embodiments, a spacing area 60 has more than four edges (e.g., six
edges). In some embodiments, a spacing area 60 may have 12 edges
75a-751. In particular embodiments, a spacing area 60 has an
X-shape.
[0084] Returning to FIG. 16, in certain embodiments, some of the
spacing areas on a wafer may have one shape and other spacing areas
may have another shape. For example, spacing area 60d has a V-shape
and spacing area 60c has an X-shape. Wafer 10 of FIG. 16 could be
made using any suitable techniques (e.g., electron beam
lithography, photolithographic methods, and the methods described
above for producing spacing areas and alignment areas that exhibit
different surface charges, etc.). In embodiments, wafer 10 is made
using electron beam lithography using techniques known in the
art.
[0085] Embodiments of the present disclosure further include
methods of aligning a carbon nanotube (CNT) on a wafer 10 of the
disclosure, as shown in FIG. 18. In various embodiments, a CNT 170
is deposited onto a surface of a wafer 10.
[0086] In embodiments, a CNT 170 (e.g., a single walled CNT) is
provided in a solution. Such a solution may be provided by any
suitable method. For example, it could be obtained from
manufacturers such as CHASM Advanced Materials, Inc., Canton, Mass.
or other suitable suppliers. In embodiments, a CNT 170 in a
solution is applied to the surface of a wafer 10. In some
embodiments, methods of the disclosure may comprise purifying a CNT
solution to remove some or all of a particular type of CNT 170
(e.g., semiconducting or metallic). For example, CNTs could be
purified, i.e., sorted by electronic type, using polymer extraction
techniques (e.g., using
poly((9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6'-(2,2'-bipyridine))))
in a sonication and centrifugation process). In specific
embodiments, a CNT solution is purified by dissolving 10 mg
poly((9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6'-(2,2'-bipyridine)))
in 10 ml of toluene with gentle heating (-90.degree. C.),
approximately 20 mg of single walled CNTs is then added to the
toluene solution and sonicated with a 6-mm sonication tip (Sonics
VCX 250) for 30 min at 1 sec pulses while being cooled in a water
bath (-13.degree. C.). Following sonication, the solution is
centrifuged for 10 min at 15,000 r.p.m. in a SW T41 rotor
(Beckman). The top 90% of the solution is then collected and
used.
[0087] In further embodiments, CNTs 170 in a solution may be
concentrated or diluted to a desired concentration of CNTs to
surfactant. CNTs 170 in a solution can be concentrated using any
suitable filtering methods, e.g., dialysis or other techniques that
utilize semipermeable substrates that exhibit different diffusion
rates with respect to the CNTs and surfactant(s).
[0088] In various embodiments, a CNT 170 has a surface charge that
is opposite to the surface charge of the alignment area 30. For
example, if a CNT 170 has a positive surface charge the alignment
area 30 has a negative surface charge, and vice versa. In
embodiments, a surface charge of a CNT 170 is due to a surfactant
(e.g., a polymer, a bonded functional group, etc.) on the surface
of the CNT 170. For example, the surfactant may be a dialkyl
homopolymers. In embodiments, a suitable anionic surfactant may be
used (e.g., sodium dodecyl sulphate, etc.). In specific
embodiments, the anionic surfactant is sodium dodecyl sulphate. In
other embodiments, a suitable cationic surfactant may be used. In
specific embodiments, the surfactant comprises hydroxamic acid. In
some embodiments, the CNT 170 is functionalized with DNA.
[0089] In embodiments, a CNT is associated with a surfactant by
mixing a solution containing the surfactant with a CNT solution. In
some embodiments, the solution with the CNT and the surfactant is
cooled while being mixed.
[0090] In various embodiments, a CNT 170 is a semiconducting CNT
170. In other embodiments, a CNT 170 is a metallic CNT 170. In
particular embodiments, a CNT solution includes metallic and
semiconducting CNTs 170. In various embodiments, a CNT 170 is a
single walled CNT. In other embodiments, a CNT 170 is a
multi-walled CNT. In embodiments, a CNT 170 aligns itself along
common diagonal 95 once deposited onto the surface of the wafer 10.
A CNT 170, which has a surface charge of a first polarity, that is
deposited onto the wafer 10, which has a surface charge of a second
polarity, will align itself such that the CNT is in the minimum
energy position. In this case, the minimum energy position
correlates with the position in which the CNT has the largest area
in contact with the alignment area. As shown in FIG. 19, a
calculation of energy versus position shows that the minimum energy
position for a CNT is at an angle of .pi./2. In other words, the
minimum energy position for a CNT is to be aligned along common
diagonal 95.
[0091] Accordingly, embodiments of the present disclosure include
methods comprising providing a first wafer comprising: (i) a
plurality of alignment areas having a first surface charge of a
first polarity, each alignment area of the plurality of alignment
areas having a first diagonal between a first vertex and a second
vertex, the first diagonal extending in a first direction; and (ii)
a plurality of spacing areas having a second surface charge of a
second polarity that is different than the first polarity, the four
edges of each alignment area of the plurality of alignment areas
abutting at least one spacing area of the plurality of spacing
areas; and depositing a first carbon nanotube onto the first wafer
such that the first carbon nanotube is positioned on a first
alignment area of the plurality of alignment areas, the first
carbon nanotube extending in the first direction along the first
diagonal of the first alignment area.
[0092] Returning to FIG. 18, in various embodiments, the length 175
of the CNT 170 is more than twice the length of diagonal 55. In
other words, a CNT 170 aligned along common diagonal 95 overlaps at
least three alignment areas 30a-30c. In embodiments, the length 175
of the CNT 170 is at least about 12.6 nm. In some embodiments, the
length 175 of the CNT 170 is at least about 20.9 nm. In some
embodiments, the length 175 of the CNT 170 is at least about 41.9
nm. In some embodiments, the length 175 of the CNT 170 is at least
about 62.6 nm. In some embodiments, the length 175 of the CNT 170
is at least about 84 nm. In some embodiments, the length 175 of the
CNT 170 is at least about 100 nm. In some embodiments, the length
175 of the CNT 170 is at least about 250 nm. In some embodiments,
the length 175 of the CNT 170 is at least about 500 nm. In some
embodiments, the length 175 of the CNT 170 is at least about 1
micrometer. In some embodiments, the length 175 of the CNT 170 is
at least about 2 micrometers.
[0093] Methods of the present disclosure further include aligning
more than one CNT 170 on a surface of a wafer 10 of the disclosure,
as illustrated in FIG. 20A. Another embodiment of a method of
aligning more than one CNT 170 on a surface of wafer 10 is shown in
FIG. 20B.
[0094] In some embodiments, multiple CNTs 170a-170c are dispersed
in a solution. The solution is then applied to the surface of the
wafer 10. The CNTs 170a-170c align along diagonals 95a-95c,
respectively. Any suitable number of CNTs 170 can be aligned using
embodiments of the methods described herein. In various
embodiments, at least one CNT 170 is aligned. In various
embodiments, a plurality of CNTs 170 is aligned. In some
embodiments, at least two CNTs 170 are aligned. In some
embodiments, at least three CNTs 170 are aligned. In some
embodiments, at least four CNTs 170 are aligned. In some
embodiments, at least five CNTs 170 are aligned. In some
embodiments, at least ten CNTs 170 are aligned. In some
embodiments, at least 50 CNTs 170 are aligned. In some embodiments,
at least 100 CNTs 170 are aligned. In some embodiments, at least
500 CNTs 170 are aligned. In some embodiments, at least 1,000 CNTs
170 are aligned. Embodiments of the present disclosure are not
limited to the foregoing numbers of CNTs being aligned. In
accordance with some embodiments of the present disclosure, the
number of CNTs aligned is much greater than 1,000, e.g., 10,000,
100,000, 1,000,000, etc.
[0095] In some embodiments, the distance 180a between the first CNT
170a and the second CNT 170b ranges from about 3 nanometers (nm) to
about 20 nm. In some embodiments, the distance 180a between the
first CNT 170a and the second CNT 170b ranges from about 5 nm to
about 15 nm. In some embodiments, the distance 180a between the
first CNT 170a and the second CNT 170b is no more than 10 nm. In
some embodiments, the distance 180a between the first CNT 170a and
the second CNT 170b is less than 10 nm. In some embodiments, the
distance 180a between the first CNT 170a and the second CNT 170b
ranges from about 5 nm to about 10 nm.
[0096] In some embodiments, the distance 180b between the second
CNT 170b and the third CNT 170c ranges from about 3 nanometers (nm)
to about 20 nm. In some embodiments, the distance 180b between the
second CNT 170b and the third CNT 170c ranges from about 5 nm to
about 15 nm. In some embodiments, the distance 180b between the
second CNT 170b and the third CNT 170c is no more than 10 nm. In
some embodiments, the distance 180b between the second CNT 170b and
the third CNT 170c is less than 10 nm. In some embodiments, the
distance 180b between the second CNT 170b and the third CNT 170c
ranges from about 5 nm to about 10 nm. In various embodiments,
distance 180a is substantially the same as distance 180b.
[0097] A CNT aligned using a wafer 10 as described herein may be
transferred from a wafer 10 to a second wafer using known methods.
In some embodiments, a layer of a metal (e.g., copper, gold, etc.)
is deposited over the surface of the wafer 10 and the aligned CNTs
170. Then, thermal release tape is applied on the metal layer. The
thermal release tape, which is attached to the metal layer and CNTs
170, is removed and arranged on a second wafer. The thermal release
tape is then heated to release the aligned CNTs 170 embedded in the
metal layer onto the second wafer. The metal layer is then removed.
After the thermal release tape and metal layer have been removed,
the aligned CNTs 170 may be used in any manner desired.
[0098] In embodiments, a highly ordered arrangement of CNTs 170 is
produced. This reduces bundling and allows for lithographically
defining the distance between CNTs 170 (i.e., CNT to CNT pitch). By
producing such an ordered arrangement of CNTs 170, the variability
in the number of CNTs 170 in a single transistor is reduced.
[0099] The highly ordered arrangement of CNTs 170 could be used,
for example, to form one or more transistors (e.g., FETs). In
embodiments, the arrangement of CNTs 170 are used in
back-end-of-line CMOS for interconnects. In some embodiments, the
arrangement of CNTs 170 is used in thin film or flexible
electronics. In some embodiments, the arrangement of CNTs 170 is
used in nano-electro-mechanical switches. In some embodiments, the
arrangement of CNTs 170 is used in EUV pellicle. In some such
embodiments, the arrangement of CNTs 170 is used in EUV pellicle
for EUV lithography. In some embodiments, the arrangement of CNTs
170 is used for gas sensing. In some embodiments, the arrangement
of CNTs 170 is used for filtration. In some embodiments, the
arrangement of CNTs 170 is used in quantum computing.
[0100] The present disclosure provides, in various embodiments, a
wafer that includes quadrilateral alignment areas that have a
surface charge, where the alignment areas are surrounded by other
areas that have a surface charge with a different polarity.
[0101] Further embodiments of the present disclosure include
methods comprising providing a wafer that includes a semiconductor
substrate with layers of a first insulating material, a second
insulating material, and a hardmask on the surface; patterning the
hardmask such that openings in the hardmask expose portions of the
layer of the second insulating material; etching the exposed
portions of the second insulating material through the patterned
hardmask to expose portions of the first insulating layer; removing
the remainder of the hardmask layer; and depositing the first
material on the exposed portion of the first insulating layer,
which results in a final wafer that includes a plurality of first
areas of the second material, each first area having four edges and
being surrounded by a plurality of second areas of the first
material.
[0102] Embodiments of the present disclosure further include
methods comprising depositing a plurality of hardmasks and
selectively removing portions of the hardmasks to form a wafer as
described herein.
[0103] Additional embodiments of the present disclosure include
methods including exposing first portions of a second hardmask from
an intermediate wafer by removing first portions of the third
hardmask, where the intermediate wafer includes a semiconductor
substrate, a first insulating layer on the semiconductor substrate,
a second insulating layer on the first insulating layer, a first
hardmask on second insulating layer, a second hardmask on the first
hardmask, a third hardmask on the second hardmask. Such methods
include depositing a fourth hardmask on the third hardmask and the
first portions of the second hardmask; exposing second portions of
the second hardmask and second portions of the third hardmask by
removing first portions of the fourth hardmask; exposing first
portions of the first hardmask by removing the second portions of
the second hardmask; depositing a fifth hardmask on the first
portions of the first hardmask; exposing third portions of the
second hardmask by removing the second portions of the third
hardmask; exposing fourth portions of the second hardmask and third
portions of the third hardmask by removing the fourth hardmask;
exposing second portions of the first hardmask by removing third
and fourth portions of the second hardmask; exposing first portions
of the second insulating layer by removing the second portions of
the first hardmask; exposing third portions of the first hardmask
by removing the second, third, and fifth hardmasks; exposing first
portions of the first insulating layer by removing the first
portions of the second insulating layer; exposing second portions
of the second insulating layer by removing remaining portions of
the first hardmask; and depositing a first material on the first
portions of the first insulating layer.
[0104] Embodiments of the present disclosure also include methods
comprising depositing a CNT on a wafer that includes alignment
areas that have a surface charge and a diagonal between two
vertices, where the areas are surrounded by other areas that have a
surface charge with a different polarity.
[0105] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
[0106] The various embodiments described above can be combined to
provide further embodiments. These and other changes can be made to
the embodiments in light of the above-detailed description. In
general, in the following claims, the terms used should not be
construed to limit the claims to the specific embodiments disclosed
in the specification and the claims, but should be construed to
include all possible embodiments along with the full scope of
equivalents to which such claims are entitled. Accordingly, the
claims are not limited by the disclosure.
* * * * *