U.S. patent application number 16/702680 was filed with the patent office on 2020-04-02 for hard abrasive particle-free polishing of hard materials method.
The applicant listed for this patent is SINMAT, INC., UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.. Invention is credited to ARUL ARJUNAN, CHAITANYA GINDE, PUNEET N. JAWALI, DEEPIKA SINGH, RAJIV K. SINGH.
Application Number | 20200102479 16/702680 |
Document ID | / |
Family ID | 63165459 |
Filed Date | 2020-04-02 |
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United States Patent
Application |
20200102479 |
Kind Code |
A1 |
SINGH; RAJIV K. ; et
al. |
April 2, 2020 |
HARD ABRASIVE PARTICLE-FREE POLISHING OF HARD MATERIALS METHOD
Abstract
A method of chemical mechanical polishing (CMP) includes
providing a slurry solution including at least one per-compound
permanganate oxidizer in a concentration between 0.01 M and 2 M,
with a pH level from 1.5 to 5 or from 8 to 11, and at least one
buffering agent. The buffering agent is different from this
pure-compound permanganate oxidizer, and comprises a surfactant
and/or an alkali metal ion. The slurry solution is exclusive of any
added particles. The slurry solution is dispensed on a hard surface
having a Vickers hardness >1,000 kg/mm.sup.2 and is pressed by a
polishing pad with the slurry solution in between while rotating
the polishing pad relative to the hard surface.
Inventors: |
SINGH; RAJIV K.; (NEWBERRY,
FL) ; ARJUNAN; ARUL; (GAINESVILLE, FL) ;
SINGH; DEEPIKA; (NEWBERRY, FL) ; GINDE;
CHAITANYA; (GAINESVILLE, FL) ; JAWALI; PUNEET N.;
(GAINESVILLE, FL) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SINMAT, INC.
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
Gainesville
Gainesville |
FL
FL |
US
US |
|
|
Family ID: |
63165459 |
Appl. No.: |
16/702680 |
Filed: |
December 4, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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15645777 |
Jul 10, 2017 |
|
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16702680 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24B 37/00 20130101;
C09G 1/02 20130101; C09G 1/04 20130101; H01L 21/3212 20130101; H01L
21/30625 20130101; C09K 3/1409 20130101; H01L 21/02024 20130101;
B24B 37/044 20130101 |
International
Class: |
C09G 1/02 20060101
C09G001/02; C09K 3/14 20060101 C09K003/14; H01L 21/306 20060101
H01L021/306; H01L 21/321 20060101 H01L021/321; B24B 37/00 20060101
B24B037/00; B24B 37/04 20060101 B24B037/04; C09G 1/04 20060101
C09G001/04; H01L 21/02 20060101 H01L021/02 |
Claims
1. A method of chemical mechanical polishing (CMP) hard surfaces,
comprising: providing a slurry solution comprising: an aqueous
medium; at least one per-compound permanganate oxidizer with a
concentration between 0.01 M and 2 M; a pH level from 1.5 to 5 or
from 8 to 11; at least one buffering agent different from the
per-compound permanganate oxidizer, the buffering agent comprising
at least one of a surfactant and an alkali metal ion; the slurry
solution being exclusive of any added particles, dispensing the
slurry solution on a hard surface having a Vickers
hardness>1,000 kg/mm.sup.2, and pressing with a polishing pad
with the slurry solution on the hard surface in between while
rotating the polishing pad relative to the hard surface.
2. The method of claim 1, wherein the pH level is 1.5 to 5 and
wherein the slurry solution includes in situ soft particles formed
by a decomposition of the per-compound permanganate oxidizer to
form MnO.sub.2 particles that have a Mohs hardness less than or
equal to (.ltoreq.) 3.
3. The method of claim 1, wherein the hard surface comprises a
carbide, a nitride, or a mixture thereof.
4. The method of claim 1, wherein the slurry solution further
comprises transition metal ions in a concentration from 0.03 M to 1
M in addition to any transition metals ions that may be in the
per-compound permanganate oxidizer.
5. The method of claim 1, wherein the polishing pad comprise a
polymeric pad having a Shore D hardness less than 100, and wherein
a polishing pressure used for the pressing is less than 15 psi.
6. The method of claim 1, wherein the buffering agent comprises the
surfactant, and wherein the surfactant is an anionic surfactant
having a concentration from 0.01 grams per liter to 20 grams per
liter.
7. The method of claim 1, wherein the slurry solution further
comprises at least one alkali metal ion besides an alkali metal ion
in the per-compound permanganate oxidizer if the per-compound
permanganate oxidizer includes an alkali metal ion.
8. A method of chemical mechanical polishing (CMP) hard surfaces,
comprising: providing a slurry solution comprising: an aqueous
medium, at least one per-compound permanganate oxidizer with a
concentration between 0.01 M and 2 M, a pH level from 1.5 to 5, at
least one buffering agent different from the per-compound oxidizer,
the buffering agent comprising at least one of a surfactant and an
alkali metal ion, the slurry solution being exclusive of any added
particles, dispensing the slurry solution on a hard surface having
a Vickers hardness>1,000 kg/mm.sup.2, pressing with a polishing
pad with the slurry solution on the hard surface in between while
rotating the polishing pad relative to the hard surface, and
wherein the slurry solution includes in situ soft particles formed
by a decomposition of the per-compound permanganate oxidizer to
form MnO.sub.2 particles that have a Mohs hardness less than or
equal to (.ltoreq.) 3.
9. The method of claim 8, wherein the polishing pad comprise a
polymeric pad having a Shore D hardness less than 100, and wherein
a polishing pressure used for the pressing is less than 15 psi.
10. The method of claim 8, wherein the hard surface comprises a
carbide, a nitride, or a mixture thereof.
11. The method of claim 8, wherein the buffering agent comprises
the surfactant, and wherein the surfactant is an anionic surfactant
having a concentration from 0.01 grams per liter to 20 grams per
liter.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. application Ser.
No. 15/645,777 entitled "HARD ABRASIVE PARTICLE-FREE POLISHING OF
HARD MATERIALS", filed Jul. 10, 2017, which is herein incorporated
by reference in its entirety.
FIELD
[0002] Disclosed embodiments relate to chemical mechanical
polishing (CMP) methods for polishing hard material surfaces of
semiconductors or on semiconductors.
BACKGROUND
[0003] Hard metal layers used in semiconductor wafer fabrication
such as tungsten, iridium, and ruthenium that have a Vickers
Hardness exceeding 1,000 Kg/mm.sup.2 and typically do not react
readily with chemicals such as oxidizers used in CMP resulting in a
low CMP removal rate. Hard non-metal layers having a Vickers
hardness exceeding 1,000 Kg/mm.sup.2 are also typically
non-reactive again leading to a low CMP removal rate. Examples of
hard non-metals include diamond and some nitrides (e.g., GaN, AlN
or their mixtures), some carbides (e.g., SiC), some oxides of
elements in the Group III of the periodic table, as well as
carbide, oxides and nitrides or mixtures thereof of metals in rows
3, 4, 5, 6 of the periodic table. Because of their hardness,
materials having a Vickers hardness greater than 1,000 Kg/mm.sup.2
typically all require hard abrasive particles such as silica,
alumina or diamond to enable polishing with a reasonable polishing
rate.
SUMMARY
[0004] This Summary briefly indicates the nature and substance of
this Disclosure. It is submitted with the understanding that it
will not be used to interpret or limit the scope or meaning of the
claims.
[0005] Disclosed embodiments recognize slurries having typical hard
abrasive particles for polishing hard materials such as SiC, and
GaN and metals such as ruthenium and tungsten can provide
reasonably high polishing rates, but cause significant surface and
sub-surface damage. Slurries with moderately hard particles which
are softer than such hard surfaces typically provide low polishing
rates, with significantly less damage. However, since the
moderately hard particles are still significantly abrasive (having
a Mohs hardness of about 6 to 9), crystal damage is generated
during the CMP process. Moreover, since such hard materials are
generally chemically inert, the CMP process typically is very slow
and thus requires a long cycle time as the slurry chemicals do not
react with the hard surface. Therefore, there is a need to develop
new CMP slurries and/or methods for polishing hard surfaces which
decrease crystal damage and increase the polishing rate as compared
to conventional hard abrasive particles-based slurries.
[0006] Disclosed embodiments include a method of CMP include
providing a slurry solution including at least one per-compound
permanganate oxidizer with a pH level from 1.5 to 5 or 8 to 11, and
at least one buffering agent comprising a surfactant and/or an
alkali metal ion. The slurry solution is exclusive any added
particles, but may include in situ formed soft slurry particles
that have throughout a Vickers hardness less than 300 Kg/mm.sup.2
or a Mohs Hardness less than or equal to 3. A hard surface is
defined herein as a material having a Vickers hardness>1,000
kg/mm.sup.2 that is pressed with a polishing pad with the slurry
solution in between while rotating the polishing pad relative to
the hard surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is a flow chart that shows steps for an example
method of hard abrasive particle-free polishing of hard materials,
according to an example embodiment.
[0008] FIG. 2 is a table showing experimental hard abrasive
particle-free polishing data results corresponding to Example
1.
DETAILED DESCRIPTION
[0009] Embodiments of the invention are described with reference to
the attached figures, wherein like reference numerals are used
throughout the figures to designate similar or equivalent elements.
The figures are not drawn to scale and they are provided merely to
illustrate certain features. Several aspects of this Disclosure are
described below with reference to example applications for
illustration.
[0010] It should be understood that numerous specific details,
relationships, and methods are set forth to provide a full
understanding of the subject matter in this Disclosure. One having
ordinary skill in the relevant art, however, will readily recognize
that embodiments of the invention can be practiced without one or
more of the specific details or with other methods. In other
instances, well-known structures or operations are not shown in
detail to avoid obscuring subject matter. Embodiments of the
invention are not limited by the illustrated ordering of acts or
events, as some acts may occur in different orders and/or
concurrently with other acts or events. Furthermore, not all
illustrated acts or events are required to implement a methodology
in accordance with this Disclosure.
[0011] Notwithstanding that the numerical ranges and parameters
setting forth the broad scope of this Disclosure are
approximations, the numerical values set forth in the specific
examples are reported as precisely as possible. Any numerical
value, however, inherently contains certain errors necessarily
resulting from the standard deviation found in their respective
testing measurements. Moreover, all ranges disclosed herein are to
be understood to encompass any and all sub-ranges subsumed therein.
For example, a range of "less than 10" can include any and all
sub-ranges between (and including) the minimum value of zero and
the maximum value of 10, that is, any and all sub-ranges having a
minimum value of equal to or greater than zero and a maximum value
of equal to or less than 10, e.g., 1 to 5.
[0012] Disclosed embodiments include a CMP slurry that is exclusive
of any added particles, and a related method of hard abrasive
particle-free polishing of hard wafer surfaces having a Vickers
hardness>1,000 Kg/mm.sup.2. The slurry solution can include in
situ formed soft particles that have a Mohs hardness less than or
equal to 3, such as from the decomposition in the slurry solution
of the permanganate-based oxidizer. The slurry solution comprises
an aqueous medium including at least one per-compound permanganate
oxidizer, where hard abrasive particles are conventionally required
as known in the art of CMP for the polishing of hard materials.
Hard abrasive particles, which are excluded from disclosed
slurries, are defined herein as having Vickers hardness>500
Kg/mm.sup.2 or Mohs hardness greater than 6, such as comprising
silica, alumina, diamond, or titania.
[0013] A per-based compound as used herein is a compound that
includes an element in its highest oxidation state. Some
per-compound oxidizers include transition metal compounds, such as
permanganate (MnO.sub.4.sup.-), and some non-transition elements
such as perchlorate (ClO.sub.4.sup.-). Optionally, the slurry
solution can also include transition metal ions besides those that
may be in the per-compound oxidizers in a concentration from 0.03 M
to 1 M, as well as optional chelating agents such as
ethylenediamine tetraacetic acid (EDTA), or corrosion inhibitors
such azoles and amines.
[0014] Examples of transition metal elements in disclosed
per-compound oxidizers include cerium, manganese, chromium,
titanium, iron, cobalt, copper, zinc, nickel, and vanadium. Typical
examples of per-compound types include permanganate, peroxide,
perchlorate, and persulfate compounds. One particular per-compound
type is an alkali metal (e.g., sodium, lithium, potassium) of
permanganate, or a mixture of a per-compound with one component
being a permanganate.
[0015] Examples of specific per-compound oxidizers include
Potassium Permanganate (KMnO.sub.4), sodium Permanganate
(NaMnO.sub.4), Potassium Perchlorate (KClO.sub.4), Potassium
Periodate (KIO.sub.4), Potassium Perbromate (KBrO.sub.4), Potassium
Peroxide (K.sub.2O.sub.2), Potassium Peroxoborate (KBO.sub.3),
Potassium Peroxochromate (K.sub.3CrO.sub.8), Potassium
Peroxodicarbonate (K.sub.2C.sub.2O.sub.6), Potassium
Peroxodisulfate (K.sub.2S.sub.2O.sub.8), Potassium Perrhenate
(KReO.sub.4), Potassium peroxymonosulfate (KHSO.sub.5), Potassium
Ortho Periodate (K.sub.5IO.sub.5), and Potassium peroxomonosulfate
(or Peroxymonosulfate) (K.sub.2SO.sub.5). The oxidation state of
manganese in permanganate is +7, which is the highest oxidation
state for manganese. Similarly, the oxidation state for chlorine in
chlorate is +7, which is its highest oxidation state. The oxidation
state of the transition metal or per-based oxidizer can be at least
+3, or higher. Examples of +3 or higher oxidation state transition
metals include V.sup.3+, 4+, 5+, Ti.sup.3+, 4+, Cr.sup.3+, 6+,
Mn.sup.+3+, 4+, 7+, Fe.sup.3+, Ni.sup.3+, Co.sup.3+, Mo.sup.3+, 4+,
5+, 6+, Ru.sup.3+, 4+, Pd.sup.4+, Ta.sup.4+, 5+, W.sup.6+,
Re.sup.4+, .sup.6+, 7+, Au.sup.3+, and Zr.sup.4+. A mixture of
per-compound oxidizers can also be used. The concentration of
per-compound oxidizers can vary from 0.01 M to 10 M or up to
maximum solubility of the per-based compound at an elevated CMP
temperature used (e.g., 70.degree. C.), but is typically between
0.01 M and 4 M, such as between 0.1 M and 2 M.
[0016] Examples of hard metals for disclosed polishing include Ir,
W, Ta, and Hf. Examples of hard non-metal materials include
carbides such as SiC, nitrides such as GaN, AlGaN, and AlN,
diamond, and non-metals containing either nitrogen, carbon or a
mixture of both nitrogen and carbon. The pH of the slurry solution
can vary from 0.5 to 13.5, generally being from 1.5 to 5 in the
acidic pH range or from 8 to 11 in the basic pH range. The pH of
the slurry can be adjusted by adding either inorganic acids or
bases. Examples of strong inorganic acids include nitride acid,
sulfuric acid, phosphoric acid, and hydrochloric acid. Examples of
organic acids include acetic acid, formic acid, and citric acid.
Examples of inorganic bases include alkali (sodium, potassium,
ammonium, lithium) based hydroxides. Examples of organic bases
include TMAH (Tetramethyl ammonium hydroxide) and other
hydroxides.
[0017] During polishing the hard material on the wafer surface is
rubbed by a polymeric, metallic or a ceramic pad with the hard
material having a relative velocity with respect to the polishing
pad. This relative velocity can vary from 0.01 m/sec to 100 m/sec
with a typical range of 0.2 m/s to 4 m/s. The pressure during CMP
can vary from 0.1 psi to 100 psi, with a typical range from 1 psi
to 10 psi. Examples of polymeric pads include polyurethane-based
pads, and other polymeric materials that generally all have a Shore
D hardness of less than 100. The porosity of the pads can vary from
0.01% to 99% with a typical range from 10% to 50%. The density of
the pads can vary from 0.4 gm/cm.sup.3 to 1.0 gm/cm.sup.3. Examples
of metal pads include cast-iron, copper, tin, and a copper-polymer
composite. Examples of ceramic pads include silica, glass, alumina,
sapphire pads and other ceramic materials with a Vickers hardness
exceeding 500 Kg/mm.sup.2.
[0018] The buffering agent can provide several beneficial functions
during the polishing process. The buffering agent keeps the pH of
the slurry solution stable during the polishing process and also
helps to increase the polishing rate as compared to un-buffered
oxidizers especially in the pH range of 3 to 10. This is an
unexpected result because conventionally the addition of such
additives reduces the polishing rate. A buffering agent is defined
herein as a material which increases the amount of strong acid such
as nitric acid, sulfuric acid, or hydrochloric acid needed to
change the pH of the slurry solution from 9.0 to 3.0. The buffering
ratio (referred to herein as the BR ratio) refers to amount of
strong acid required when changing the pH of the slurry solution
containing the buffering agent as compared to the amount of strong
acid required to change the pH from 9 to 3.0 of the slurry solution
containing no buffering agent. By adding a buffering agent to the
slurry solution the BR value can be between 1.1 and 200, with a
typical BR value range from 2 to 20, such as from 2 to 10.
[0019] Examples of buffering agents include organic compounds
including polymers containing at least one hydroxyl (OH) group with
a concentration ranging from 0.001 g/liter of per solution to 100
g/liter having a typical range from 0.05 gm/liter to 9 gm/liter,
and surfactants or surface active polymers having a molecular
weight exceeding 100 Daltons with a concentration from 0.0001
g/liter of per-compound to 100 gm/liter with typical concentration
range from 0.1 gm/liter to 5 gm/liter. Other buffering agents
include mixtures of strong acids (examples nitric acid,
hydrochloric acid, and sulfuric acid) or strong bases (sodium
hydroxide, or potassium hydroxide) mixed with weakly disassociating
compounds which have pKa (the acid dissociation constant at
logarithmic scale) ranging from 2.0 to 10.0 such as citric acid,
acetic acid, oxalic acid, phosphates, and borates with the
concentration of the weak disassociating compounds in the slurry
solution varying from 0.1 gram/liter to 100 gram/liter such as 0.5
gram/liter to 10 grams/liter.
[0020] The slurry solution can also include transition metal ions
besides those provided by the per-based oxidizer such as manganese,
copper, titanium, transition mixed metal ions of manganese with
valence varying from +2 to +7 with concentration varying from 0.001
M to 10 M with typical range of 0.02M to 0.3 M. The transition
metal ions in the slurry solution together with transition metal
ions that may be in the per-compound oxidizer can together function
as a buffering agent when including at least 2 valences of
manganese selected from 2+, 3+, 4+, and 7+ with total manganese ion
concentration typically not exceeding 2.0 moles/liter.
[0021] A variety of surfactants can also be added to disclosed
slurries as a buffering agent selected from cationic, anionic,
zwitterionic, or non-ionic ones. The surfactants can be used
individually or in a mixed state. A list of surfactants that can be
used with the invention are provided in a book by M. J. Rosen,
Surfactants and Interfacial Phenomena, John Wiley & Sons, 1989,
hereinafter Rosen, on pages 3-32, 52-54, 70-80, 122-132, and
398-401. The concentration of surfactants can vary from 0.0001
g/liter to 100 gm/liter with typical concentration range from 0.1
gm/liter to 5 gm/liter. The BR was found to change from 1.0 to
greater than 2.5 with the addition of a non-ionic surfactant.
Furthermore, the increase in the BR ratio also leads to an increase
in the removal rate during the polishing of hard metals and
non-metals.
[0022] The non-ionic surfactants can comprise polyethylene glycol
ethers, polypropylene glycol alkyl ethers, glucoside alkyl ethers,
polyethylene glycol octylphenyl ethers, polyethylene glycol
alkylphenyl ethers, glycerol alkylesters, polyoxyehylene glycol
sorbitan alkyl esters, sorbitan alkyl esters, cocamide,
dodeceyldimethylamine oxide, block copolymers of polyethylene
glycol and poly propylene glycol, polyethoxylated tallow amine.
Examples of specific non-ionic surfactants include TX-100 or BRIJ
35 (a polyethylene glycol dodecyl ether, Polyoxyethylene (23)
lauryl ether). The concentration of the non-ionic surfactants
should generally be at least 0.001 mg/liter to a maximum value of
50 g/liter in solution, such as in a range from 0.03 gm/liter to 5
gm/liter.
[0023] As described above, the slurry solution can also include
organic compounds having OH groups compounds as the buffering
agent. Examples include organic acids, alcohols, amines (e.g.,
bicine, TEA) or compounds having a chemical formula represented by
RCH.sub.2OH where R, represent a carbon containing group such as
H.sub.21C.sub.10--CH.sub.2--CH.sub.2--[C.sub.2H.sub.4].sub.22--O--CH.sub.-
2-- in the case of a non-ionic surfactant (e.g. BRIJ-35) or
containing from 3 to up to 70 carbon atoms. The organic compound
concentration should generally be at least 0.001 mg/liter up to a
maximum value of 50 g/liter, such as a range of 0.1 gm/liter to 5
gm/liter.
[0024] The addition of buffering organic compounds such as having
the formula RCH.sub.2OH together with per-compound oxidizers can
lead to formation of intermediate compounds in the slurry due to
in-situ chemical reactions. An example of an in-situ chemical
reaction is given below, where RCH.sub.2OH functions as a buffering
agent:
RCH.sub.2OH+2 MnO.sub.4.sup.-+2 H.sup.+RCHO+2MnO.sub.2+2
H.sub.2O+O.sub.2
where R is a carbon containing organic group. Due to this chemical
reaction the RCHO group may also act as buffering agent. Thus, the
polishing slurry may contain an RCHO group in addition to a
RCH.sub.2OH group that may be formed in-situ. The RCHO groups
formed in-situ in the slurry can vary in concentration from 0.01
gm/liter to 100 gm/liter, such as 0.1 gm/liter to 10 gm/liter, and
can be formed at a basic pH from 8 to 11 or an acidic pH from 1.5
to 5. The manganese oxide formed in situ in the slurry solution can
be in form of a precipitate, or can coat surfaces of soft abrasive
particles.
[0025] The slurry solution can optionally also include at least one
alkali metal ion (e.g., Li+, K+, and Na+) besides the per-based
oxidizer. The alkali metal ion in the slurry solution is generally
in a concentration from 0.01M to 10 M, with a typical range from
0.1 M to 0.5 M, or phosphate, acetate, sulfur or chlorine
containing ions ranging in concentration from 0.001 M to 10 M with
typical concentrations ranging from 0.01 M to 0.5 M.
[0026] The polishing rate of a wide variety of different hard
materials can be appreciable using disclosed embodiments despite
excluding conventionally needed hard abrasive particles that are
typically added to slurry solutions to polish hard materials such
as silicon carbide and carbon. It is recognized to be important to
increase the kinetics of the slurry's reaction with the hard
surface to achieve high polishing rates. By adding at least one
buffering agent the hard material polishing rate can be
significantly enhanced. This is an unexpected result because
buffering agents are known to tend to reduce the polishing rate,
but disclosed slurries with such additives have been found to
increase the hard material removal rate. It appears that the
presence of buffering agent(s) in the slurry solution tends to
catalyze the oxidation reaction of the hard layer being polished,
thereby leading to significantly increased polishing rates.
[0027] The polishing process can take place using a CMP apparatus
when the wafer surface is rubbed with a slurry by a polymeric pad
or a metal plate or ceramic plate. The flow rate of the slurry can
vary from 1 ml/min to 10 liter/min with typical flow from 10 ml/min
to 2,000 ml/min. The polishing pressure can vary from 0.1 psi to 20
psi with typical range from 1 psi to 10 psi. The linear velocity
can vary from 0.01 m/sec to 100m/sec with typical range from 0.4
m/sec to 5 m/sec. The temperature of the slurry can vary from
5.degree. C. to 80.degree. C., with a typical range from 20.degree.
C. to 50.degree. C.
[0028] FIG. 1 is a flow chart that shows steps for an example
method 100 of abrasive particle-free polishing of hard materials,
according to an example embodiment. Step 101 comprises providing a
slurry solution including at least one per-compound permanganate
oxidizer in a concentration between 0.01 M and 2 M, with a pH level
from 1.5 to 5 or from 8 to 11, and at least one buffering agent.
The buffering agent is different from the per compound oxidizer,
and comprises a surfactant and/or an alkali metal ion. In the case
that the buffering agent comprises the surfactant, the surfactant
can be an anionic surfactant having a concentration from 0.01 grams
per liter to 20 grams per liter. The slurry solution is exclusive
any added particles, but can include in situ formed soft particles
that have throughout a Mohs Hardness that is less than or equal to
3. Step 102 comprises dispensing the slurry solution on a hard
surface that has a Vickers hardness>1,000 kg/mm.sup.2. Step 103
comprises pressing with a polishing pad with the slurry solution on
the hard surface in between while rotating the polishing pad
relative to the hard surface.
EXAMPLES
[0029] Disclosed embodiments are further illustrated by the
following specific Examples, which should not be construed as
limiting the scope or content of this Disclosure in any way.
Example 1
[0030] Experiments were performed using a CETR polisher from Bruker
Corporation with 9-inch platen, using a rotation of the pad at 100
rotations per minute (RPM) and the sample at 60 rotations per
minute (RPM) by pressing against each other with a pressure of 6.3
psi. A soft polyurethane pad (Cabot D100) with a Shore D hardness
of less than 100 was used for the polishing process. A slurry with
KMnO.sub.4 as the per-compound oxidizer in a concentration of 0.30
moles/liter dissolved in water with a pH 1 to 13 was dispensed
using peristaltic pump on the polishing pad. The slurry solution
was dispensed at 30 to 40 ml/minute.
[0031] The removal rates of silicon carbide and gallium nitride,
and diamond layers at different pH and concentration of the
KMnO.sub.4 solution are shown in the table provided in FIG. 2. This
table clearly shows the high removal rate of various carbides and
nitrides by the permanganate slurry. An interesting feature of this
polishing process is that removal rate goes up as the pH is
increased in the acidic range. A significant result for this
polishing process is the result of a surface roughness 1 to 2 .ANG.
(rms) with no subsurface damage was achieved. Furthermore, this
hard abrasive particle-free composition can contain small particles
of amorphous MnO.sub.2 formed in situ due to autocatalysis. The
Mohs hardness for amorphous MnO.sub.2 formed by autocatalysis is
.ltoreq.3. Thus amorphous MnO.sub.2 formed by autocatalysis in situ
in the slurry solution has a different structure as compared to
conventional MnO.sub.2 slurry particles that are known to be
crystalline particles, specifically disclosed MnO2 particles are
amorphous and thus have a significantly lower hardness (.ltoreq.3)
as compared to conventional MnO.sub.2 abrasive grains that have a
Mohs hardness of about 4.
[0032] No particles were added to the slurry solution, only soft
particles formed in-situ in the slurry solution. It is interesting
to note that high removal rates are obtained for the hard materials
polished (Vickers hardness of GaN 1500 Kg/mm.sup.2, SiC
approximately 3,000 Kg/mm.sup.2, and diamond approximately 10,000
Kg/mm.sup.2) despite lacking conventionally required hard abrasives
in slurry. The removal action is based upon a formation of a
modified (oxidized layer) on the surface of the hard material layer
which is removed by the rubbing of the polishing pad. The Inventors
have seen removal or polishing of carbide/nitride surfaces when
using polymeric pads with Shore Hardness D varying from 5 to 100.
The removal rate was found to be linearly dependent on pressure up
to 10 psi and revolution rate (10 to 300 rpm).
Example 2
Effect of Pad Pressure
[0033] Experiments were performed using a Buehler polisher with
12-inch platen, rotating the pad at 90 RPM and sample with 60 RPM
and by pressing against each other with pressure varying pressure.
A slurry with KMnO.sub.4 as the per-compound oxidizer in a
concentration of 0.1 mole/liter dissolved in water at a pH of 2 was
dispensed during the polishing experiment using peristaltic pump. A
polyurethane pad (Cabot D100) was used for this polishing process
with Shore D hardness of approximately 40. The removal rates of
c-face SiC wafers with different pad pressures using the
above-mentioned process is shown in the table below. It should be
noted that polymeric pads with a Shore D hardness ranging from 10
to 100 or Shore A hardness ranging from 5 to 100 are expected to
give rise to high polishing rates for such slurries.
TABLE-US-00001 SiC -C- face@ pH~2 Pressure in psi Removal rate
(nm/h) 0.5 350 2.0 2,400 6.36 5,450 9.55 7,880 12.73 9,880 15.92
10,730
The SiC removal rate was found to be approximately linear with
pressure. The removal rate of c-face SiC was found to be much
higher than Si-face. It is believed that these good results are
because of a strong interaction of the permanganate ions with
carbon and nitrogen-based bonds, with such bonds being susceptible
to oxidation of the surface.
Example 3
Effect of Temperature
[0034] Experiments were performed using a Buehler polisher with
12-inch platen, rotating the pad at 90 RPM and the sample at 60 RPM
by pressing against each other with a pressure of 6.3 psi. A slurry
with KMnO.sub.4 as the per-compound oxidizer in a concentration of
0.4 mole/liter dissolved in water at a pH of 2. The solution was
heated to different temperatures using a hot plate. The heated
solution at different temperatures was dispensed during the
polishing experiment using a peristaltic pump. A polyurethane pad
(Cabot D100) was used for this polishing process. The removal rates
c-face SiC wafers with different temperatures using the
above-mentioned process is shown in the table below. It should be
noted that polymeric pads with a Shore D hardness ranging from 10
to 100 or Shore A hardness ranging from 5 to 100 are expected to
give rise to polishing rates for such slurries.
TABLE-US-00002 SiC -C- face@ pH~2 Temperature Removal rate
(.mu.m/h) 25.degree. C. 7.3 50.degree. C. 7.7
The polishing temperature can vary from 10.degree. C. to 50.degree.
C., however no strong temperature dependence was observed.
Example 4
Effect of Salt Addition
[0035] Experiments were performed using a Buehler polisher with
12-inch platen, rotating the pad at 90 RPM and the sample at 60 RPM
and by pressing against each other with a pressure of 6.3 psi. A
slurry with KMnO.sub.4 as the per-compound oxidizer in a
concentration of 0.05 mole/liter and different (organic and
inorganic) salts with different concentrations was dissolved in
water at a pH of 1.6. This mixed slurry solution was dispensed on
the pad during the polishing experiment using a peristaltic pump. A
polyurethane pad (Cabot D100) was used for this polishing process.
The removal rates C-face SiC wafers with different salt addition,
using the above-mentioned process is shown in the table below.
TABLE-US-00003 SiC -c- face@ pH 1.6 Salt Salt Concentration Removal
rate (nm/h) No salt 0 4,506 NaCl 0.2 mol 3,618 KCl 0.2 mol 3,656
K.sub.2SO.sub.4 0.1 mol 3,900 KNO.sub.3 0.15 mol 4,205
Na.sub.2HPO.sub.4 0.01 mol 3,560 CH.sub.3COONa 0.01 mol 3,500
The above salts were found to decrease the removal rates, however a
better uniformity in polishing was observed.
Example 5
Effect of Pads
[0036] Experiments were performed using a Buehler polisher with
12-inch platen, rotating the pad at 90 RPM and the sample at 60 RPM
by pressing against each other with a pressure of 6.3 psi. A slurry
with KMnO4 as the per-compound oxidizer in a concentration of 0.1
mole/liter dissolved in water at pH of 2 was dispensed on the pad
during the polishing experiment using a peristaltic pump. The
experiments were performed using polishing pads made of
polyurethane, poromeric, copper composite (copper and epoxy) and
metals places copper and cast iron. The poromeric pad is composed
of a polymer with Shore hardness A of less than 20. The removal
rates C-face SiC and Ga-face GaN wafers with use of different pad
type using the above-mentioned process is shown in the table
below.
TABLE-US-00004 SiC -C- face@ pH~3, GaN Ga-face @ pH~1.5, Pad
Removal rate (.mu.m/h) Removal rate (.mu.m/h) Polyurethane 5.38 0.3
Poromeric pads 7.7 0.25 Copper Composite 0.66 0.15 Copper plate
0.55 0.1 Cast Iron 0.66 0.1
[0037] The hardness of the polymeric pads can be varied from Asker
C-20 to Asker C-100 and a shore D hardness from 10 to 100.
Substantial removal of material was observed. Cast iron and copper
plates were found to give lower removal rates compared to pads.
Corrosion inhibitors such as amines and azoles (benzo triazole
(BTA) were added to the slurry to reduce its corrosive properties
but it did not significantly decrease the polishing rates.
Example 6
Polishing of Different Materials
[0038] Experiments were performed using a CETR-CP-4 polisher with
9-inch platen, rotating the pad at 100 RPM and the sample at 60 RPM
by pressing against each other with a pressure of 6.3 psi. A slurry
with KMnO.sub.4 as the per-compound oxidizer in a concentration of
0.03 to 1.5 mole/liter dissolved in water at a pH of 2 was
dispensed on the pad during the polishing experiment using a
peristaltic pump. An IC 1000 polishing pad from DOW Electronic
materials comprising a micro-porous polyurethane material was used.
The experiments were performed using different hard substrates and
the removal rates achieved on each substrate is shown in the table
below.
TABLE-US-00005 Oxidizer Concentration Removal rate Material
(mole/liter) pH (.mu.m/h) AlGaN 0.05 2-3 0.35 Al -85%, Ga- 15% 0.50
2-3 1.7 AlN 1.50 2-3 0.95 Ruthenium (Ru) 1.5 2 0.1 Ruthenium (Ru)
0.5 3 0.12 Tungsten (W) 0.1 2 0.06 Iridium (Ir) 0.1 2 0.05 Tantalum
(Ta) 0.1 4 0.02
This data shows that a KMnO.sub.4 slurry without hard abrasive
particles provides significant removal of material from both AlGaN
and metal surfaces.
Example 7
Effect of Additives
[0039] Experiments were performed using a Buehler polisher with 12
inch platen, rotating speed of the pad at 90 RPM and the sample of
on axis poly-crystalline silicon carbide at 60 RPM by pressing
against each other with a pressure of 6.3 psi. A slurry with
KMnO.sub.4 as the per-compound oxidizer in a concentration of 0.3
mole/liter was dissolved in water at a pH of 3 was mixed with
different surfactants, concentration of organic compounds with OH
groups and Mn.sup.2+ ions was dispensed on the pad during the
polishing experiment using a peristaltic pump. The experiments were
performed using different substrates and the removal rates with
each additive normalized to a 0.25 mole/liter KMnO.sub.4 solution
is shown in the table below.
TABLE-US-00006 Removal rate 0.25 mol/liter KMnO.sub.4 Additive
/Concentration pH solution 0.25 mole/liter KMnO.sub.4 1.5 0.66 0.25
mole/liter KMnO.sub.4 3 0.5 0.25 mole/liter KMnO.sub.4 5 0.45
Cationic Surfactant: Cetrimonium 3 0.7 bromide (C12TAB) (0.01 g/L)
Cationic Surfactant: Cetyl ammonium 3 0.58 bromide (C12TAB) (5 g/L)
Non-ionic surfactant: Pentaethylene 9 0.75 glycol monododecyl ether
(0.2 g/L) (Brij-35) Non-ionic surfactant: Pentaethylene 3 0.87
glycol monododecyl ether (1 g/L) (Brij -35) Non-ionic surfactant:
Octaethylene 3 0.69 glycol monododecyl ether (0.3 g/L) (Brij)
Non-ionic surfactant: Octaethylene 3 0.73 glycol monododecyl ether
(5 g/L) KMnO4 (Brij-3 5) Anionic Surfactant: Sodium dodecyl 3 0.71
sulfate +0.12 g/L) Anionic Surfactant: Sodium dodecyl 3 0.61
sulfate +4 g/L) Non-Ionic surfactant Polyethylene 10 0.33 glycol
octylphenyl ethers. TX100 + 4 gm/L Non-Ionic surfactant
Polyethylene 3 0.77 glycol octylphenyl ethers. TX100 + 0.1 gm/L
Non-Ionic surfactant Polyethylene 5 0.93 glycol octylphenyl ethers.
TX100 + 0.1 gm/L Bicine N,N-bis (2-hydroxyehyl) 7.5 0.57 1 glycine
1 g/L) Bicine N,N-bis (2-hydroxyehyl) 3 0.85 glycine 0.5 g/L)
Bicine N,N-bis (2-hydroxyehyl) 3 0.69 glycine 1 g/L) 0.03 mole
Manganese Chloride 3 0.62 Hexahydrate (MnCl2.cndot.6H20)
[0040] Various additives with different concentration were added
for 0.25 mole KMnO.sub.4 disclosed slurries. The removal rates were
found to decrease with additives at lower pH but appear to be the
same or higher at higher pH (e.g., pH .about.5). As disclosed above
the BR is defined as the strong acid required to reduce pH from 9
to 5 when compared to the same slurry with no buffer agent added.
For non-ionic surfactants, the BR was between 1.0 and 10.0
depending on the concentration of the non-ionic surfactant. The
ability to have a high BR is advantageous as it leads to constant
pH along the polishing process. The addition of organic additives
such as bicine as a buffering agent with surfactants seems to
increase the buffering ratio. With bicine a BR of 1.2 was observed
(0.05 gm/liter) while a BR of 5.6 was obtained with TX-100 (a
non-ionic surfactant that has a hydrophilic polyethylene oxide
chain and an aromatic hydrocarbon lipophilic or hydrophobic group).
In this case a higher removal rate was obtained.
Example 8
Effect of Multiple Manganese Ion Valence States
[0041] Experiments were performed using a Buehler polisher with 12
inch platen, rotating speed of the pad at 90 RPM and the sample
being on axis 4H silicon carbide Si-face wafer at 60 RPM by
pressing against each other with a pressure of 6.3 psi. A slurry
with KMnO.sub.4 as the per-compound oxidizer in a concentration of
0.3 M was dissolved in water at a pH of 3 mixed with soft oxides of
manganese oxide (such as MnO.sub.2) with a Vickers hardness less
than 200 Kg/mm.sup.2 or Mohs hardness less than 3 with charges
states Mn.sup.2+, Mn.sup.3+, Mn.sup.4+ and Mn.sup.7+ that was
dispensed on the pad during the polishing experiment using a
peristaltic pump. A polyurethane pad (Cabot D100) was used for this
polishing process. The experiments were performed using different
substrates and the removal rates with each additive normalized to
0.3 mole/liter of KMnO.sub.4 solution is shown in the table
below.
TABLE-US-00007 Removal rate 0.3 mol/liter KMnO.sub.4 0.1 mole/liter
KMnO.sub.4 pH solution 0.1 mole/litter KMnO.sub.4 3 0.2 1 gm/liter
of Manganese(II) oxide, MnO 3 0.2 1 gm/liter of Manganese(III)
oxide 3 0.201 1 gm/liter of Manganese(IV) oxide 3 0.23 1 gm/liter
of Manganese(VII) oxide, Mn.sub.2O.sub.7 3 0.23
[0042] These results show that the addition of Mn.sup.+4 increases
the rate of the polishing process. The presence of multivalent
manganese ions also can be seen to help the polishing process. It
should be noted that polymeric pads with Shore D hardness ranging
from 10 to 100 or a Shore A hardness ranging from 5 to 100 are
expected to give rise to polishing rates for such slurries.
[0043] While various embodiments of the invention have been
described above, it should be understood that they have been
presented by way of example only, and not limitation. Numerous
changes to the disclosed embodiments can be made in accordance with
the disclosure herein without departing from the spirit or scope of
the disclosed embodiments. Thus, the breadth and scope of
embodiments of the invention should not be limited by any of the
above explicitly described embodiments. Rather, the scope of the
invention should be defined in accordance with the following claims
and their equivalents.
* * * * *