U.S. patent application number 16/125098 was filed with the patent office on 2020-03-12 for gradiometric parallel superconducting quantum interface device.
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Vivekananda P. Adiga, Hanhee Paik, Martin O. Sandberg.
Application Number | 20200083424 16/125098 |
Document ID | / |
Family ID | 67777331 |
Filed Date | 2020-03-12 |
United States Patent
Application |
20200083424 |
Kind Code |
A1 |
Sandberg; Martin O. ; et
al. |
March 12, 2020 |
GRADIOMETRIC PARALLEL SUPERCONDUCTING QUANTUM INTERFACE DEVICE
Abstract
Techniques regarding parallel gradiometric SQUIDs and the
manufacturing thereof are provided. For example, one or more
embodiments described herein can comprise an apparatus, which can
comprise a first pattern of superconducting material located on a
substrate. Also, the apparatus can comprise a second pattern of
superconducting material that can extend across the first pattern
of superconducting material at a position. Further, the apparatus
can comprise a Josephson junction located at the position, which
can comprise an insulating barrier that can connect the first
pattern of superconductor material and the second pattern of
superconductor material.
Inventors: |
Sandberg; Martin O.;
(Ossining, NY) ; Adiga; Vivekananda P.; (Ossining,
NY) ; Paik; Hanhee; (Danbury, CT) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
67777331 |
Appl. No.: |
16/125098 |
Filed: |
September 7, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06N 10/00 20190101;
H01L 39/2464 20130101; H01L 39/2451 20130101; G01R 33/022 20130101;
G01R 33/0358 20130101; H01L 39/2493 20130101; H01L 39/08 20130101;
H01L 39/06 20130101; G01R 33/0354 20130101; H01L 39/223
20130101 |
International
Class: |
H01L 39/24 20060101
H01L039/24; H01L 39/06 20060101 H01L039/06; H01L 39/08 20060101
H01L039/08; G01R 33/035 20060101 G01R033/035; G01R 33/022 20060101
G01R033/022 |
Claims
1. An apparatus, comprising: a first pattern of superconducting
material located on a substrate; a second pattern of
superconducting material that extends across the first pattern of
superconducting material at a position; and a Josephson junction
located at the position and comprising an insulating barrier that
connects the first pattern of superconducting material and the
second pattern of superconducting material; a third pattern of
superconducting material that extends across the first pattern of
superconducting material at a second position; and a second
Josephson junction located at the second position, wherein the
second Josephson junction comprises a first portion of the first
pattern of superconducting material, a second portion of third
pattern of superconducting material, and a second insulating
barrier.
2. The apparatus of claim 1, wherein the first pattern of
superconducting material is operably coupled to a first capacitor
pad, and wherein the second pattern of superconducting material
extends across the first pattern of superconducting material to
operably couple to a second capacitor pad.
3. The apparatus of claim 1, wherein the apparatus is a
gradiometric superconducting quantum interference device.
4. The apparatus of claim 3, wherein the Josephson junction is a
superconductor-insulator-superconductor Josephson junction that
comprises a first superconductor metal comprised within the first
pattern of superconducting material and a second superconductor
metal comprised within the second pattern of superconducting
material.
5. The apparatus of claim 4, wherein the first superconductor metal
is selected from a first group consisting of a type-1
superconducting material and a type-2 superconducting material,
wherein the second superconductor metal is selected from a second
group consisting of the type-1 superconducting material and the
type-2 superconducting material, and wherein the insulating barrier
is an electrically insulating dielectric material at low
temperature.
6. The apparatus of claim 4, wherein the second Josephson junction
is a second superconductor-insulator-superconductor Josephson
junction.
7. An apparatus, comprising: a ring of superconductor material; a
path of superconductor material positioned across the ring of
superconductor material; and a Josephson junction comprising an
insulating barrier that connects the ring of superconductor
material and the path of superconductor material.
8. The apparatus of claim 7, wherein the Josephson junction is
located at a position where the path of superconductor material
crosses over the ring of superconductor material.
9. The apparatus of claim 8, wherein the apparatus is a
gradiometric superconducting quantum interference device, and
wherein the Josephson junction is a
superconductor-insulator-superconductor Josephson junction.
10. The apparatus of claim 9, wherein the ring of superconductor
material and the path of superconductor material are located on a
semiconductor substrate, wherein the ring of superconductor
material is operably coupled to a first capacitor pad, and wherein
the path of superconductor material crosses over the ring of
superconductor material to operably connect to a second capacitor
pad.
11. The apparatus of claim 10, wherein the ring of superconductor
material comprises a material selected from a first group
consisting of a type-1 superconducting material and a type-2
superconducting material, wherein the path of superconductor
material comprises another material selected from a second group
consisting of the type-1 superconducting material and the type-2
superconducting material, and wherein the insulating barrier is an
electrically insulating dielectric material at low temperature.
12. An apparatus, comprising: a first superconducting pathway
located on a substrate; a second superconducting pathway that
crosses over the first superconducting pathway at a position; a
Josephson junction located at the position and comprising a first
superconductor material of the first superconducting pathway, a
second superconductor material of the second superconducting
pathway, and an insulating barrier; a third superconducting pathway
that crosses over the first superconducting pathway at a second
position; and a second Josephson junction located at the second
position, wherein the second Josephson junction comprises a first
superconductor material of the first superconducting pathway, a
third superconductor material of the third superconducting pathway,
and a second insulating barrier.
13. (canceled)
14. The apparatus of claim 14, wherein the apparatus is a
gradiometric superconducting quantum interference device, wherein
the Josephson junction is a first
superconductor-insulator-superconductor Josephson junction, and
wherein the second Josephson junction is a second
superconductor-insulator-superconductor Josephson junction.
15. The apparatus of claim 14, wherein the first superconducting
pathway comprises a first superconducting material selected from a
first group consisting of a type-1 superconducting material and a
type-2 superconducting material, wherein the second superconducting
pathway comprises a second superconducting material selected from a
second group consisting of the type-1 superconducting material and
the type-2 superconducting material, wherein the third
superconducting pathway comprises a third superconducting material
selected from a third group consisting of the type-1
superconducting material and the type-2 superconducting material,
wherein the insulating barrier is an electrically insulating
dielectric material at low temperature.
16. A method, comprising: depositing a first superconducting
material onto a substrate; forming an insulating barrier on a
surface of the first superconducting material that is opposite to
the substrate; and depositing a second superconducting material
over the insulating barrier to form a Josephson junction at a
position; and depositing a third superconducting material over
first superconducting material to form a second Josephson junction
at a second position, wherein the second Josephson junction
comprises a first portion of the first superconducting material, a
second portion of third superconducting material, and a second
insulating barrier.
17. The method of claim 16, wherein the method forms a gradiometric
superconducting quantum interference device, and wherein the
Josephson junction is a superconductor-insulator-superconductor
Josephson junction that connects the first superconducting material
and the second superconducting material.
18. The method of claim 16, wherein the forming the insulating
barrier comprises oxidizing the first superconducting material.
19. The method of claim 18, wherein the depositing the first
superconducting material comprises evaporating the first
superconducting material onto the substrate, and wherein the
depositing the second superconducting material comprises
evaporating the second superconducting material over the insulating
barrier.
20. The method of claim 19, wherein the first superconducting
material is selected from a first group consisting of a type-1
superconducting material and a type-2 superconducting material,
wherein the second superconducting material is selected from a
second group consisting of a type-1 superconducting material and a
type-2 superconducting material, and wherein the insulating barrier
is an electrically insulating dielectric material at low
temperature.
21. A method, comprising: forming a first pattern of
superconducting material on a substrate; forming an insulating
barrier adjacent to the first pattern of superconducting material
such that the first pattern of superconducting material separates
the insulating barrier from the substrate; and forming a second
pattern of superconducting material across the insulating barrier
to form a Josephson junction at a position; forming a third pattern
of superconducting material across the first pattern of
superconducting material to form a second Josephson junction at a
second position, wherein the second Josephson junction comprises a
first portion of the first pattern of superconducting material, a
second portion of third pattern of superconducting material, and a
second insulating barrier.
22. The method of claim 21, wherein the method forms a gradiometric
superconducting quantum interference device, and wherein the
Josephson junction is a superconductor-insulator-superconductor
Josephson junction that connects the first pattern of
superconducting material and the second pattern of superconducting
material.
23. The method of claim 22, wherein the forming the insulating
barrier comprises oxidizing the first pattern of superconducting
material.
24. The method of claim 18, wherein the forming the first
superconducting material comprises evaporating the first
superconducting material onto the substrate, and wherein the
forming the second superconducting material comprises evaporating
the second superconducting material over the insulating
barrier.
25. The method of claim 24, wherein the first superconducting
material is aluminum, wherein the second superconducting material
is aluminum, and wherein the insulating barrier is aluminum
oxide.
26. The method of claim 22, wherein the second Josephson junction
is a second superconductor-insulator-superconductor Josephson
junction.
Description
BACKGROUND
[0001] The subject disclosure relates to a gradiometric parallel
superconducting quantum interface device, and more specifically, to
a gradiometric parallel superconducting quantum interface device
that can be suitable for frequency tuning of superconducting
quantum bits.
[0002] Many different types of superconducting devices regard
superconducting quantum interference device ("SQUID") technology.
The critical current of a SQUID can be tuned by applying a magnetic
flux to the loop of the SQUID. The relation between magnetic flux
and the critical current is of great importance in several
applications such as, in magnetometers and in frequency tuning of
superconducting microwave devices (e.g., resonators and quantum
bits).
[0003] The very high sensitivity to magnetic flux can also be a
disadvantage for qubit applications since fluctuations can lead to
qubit dephasing. By utilizing a gradiometric design, fluctuations
in the absolute global magnetic field can be eliminated and only
fluctuations in the magnetic field gradient will lead to dephasing.
Conventional gradiometric SQUID design comprises twisting a direct
current ("DC") SQUID loop such that the loop crosses over itself
and thereby creates two loops and two magnetic fluxes. Typically,
to separate the electrodes a dielectric material is deposited at
the crossover location in the gradiometric design. However, said
positioning of the dielectric material can negatively affect the
performance of superconducting quantum bits; thereby limiting the
applications of conventional gradiometric SQUIDs.
SUMMARY
[0004] The following presents a summary to provide a basic
understanding of one or more embodiments of the invention. This
summary is not intended to identify key or critical elements, or
delineate any scope of the particular embodiments or any scope of
the claims. Its sole purpose is to present concepts in a simplified
form as a prelude to the more detailed description that is
presented later. In one or more embodiments described herein,
apparatuses and/or methods regarding parallel gradiometric SQUIDs
are described.
[0005] According to an embodiment, an apparatus is provided. The
apparatus can comprise a first pattern of superconducting material
located on a substrate. Also, the apparatus can comprise a second
pattern of superconducting material that can extend across the
first pattern of superconducting material at a position. Further,
the apparatus can comprise a Josephson junction located at the
position, which can comprise an insulating barrier that can connect
the first pattern of superconductor material and the second pattern
of superconductor material. An advantage of such an apparatus can
be a gradiometric SQUID structure that can be sensitive to spatial
variations in magnetic fields.
[0006] In some examples of the apparatus, the first pattern of
superconducting material can be operably coupled to a first
capacitor pad, and the second pattern of superconducting material
can extend across the first pattern of superconducting material to
operably couple to a second capacitor pad. An advantage of such an
apparatus can be the implementation of a dipole gradiometric
SQUID.
[0007] According to an embodiment, an apparatus is provided. The
apparatus can comprise a ring of superconductor material. The
apparatus can also comprise a path of superconductor material
positioned across the ring of superconductor material.
Additionally, the apparatus can comprise a Josephson junction,
which can comprise an insulating barrier that can connect the ring
of superconductor material and the path of superconductor material.
An advantage of such an apparatus can be a gradiometric SQUID
structure that is suitable for quantum qubits.
[0008] In some examples of the apparatus, the Josephson junction
can be located at a position where the path of superconducting
material crosses over the ring of superconducting material. An
advantage of such an apparatus, can be alleviation of the need to
separate crossing patterns of superconducting material with a
dielectric spacer.
[0009] According to an embodiment, an apparatus is provided. The
apparatus can comprise a first superconducting pathway located on a
substrate. The apparatus can also comprise a second superconducting
pathway that can cross over the first superconducting pathway at a
position. The apparatus can further comprise a Josephson junction
located at the position. The Josephson junction can comprise a
first superconductor material of the first superconducting pathway,
a second superconductor material of the second superconducting
pathway, and an insulating barrier. An advantage of such an
apparatus can be a parallel gradiometric SQUID structure that can
be more compact than conventional gradiometric SQUID designs.
[0010] In some examples, the apparatus can also comprise a third
superconducting pathway. The third superconducting pathway can
cross over the first superconducting pathway at a second position.
Further, the apparatus can comprise a second Josephson junction
located at the second position. The second Josephson junction can
comprise the first superconductor material, a third superconductor
material of the third superconducting pathway, and a second
insulating barrier. An advantage of such an apparatus can be one or
more parallel gradiometric SQUID implementations having four or
more magnetic poles.
[0011] According to an embodiment, a method is provided. The method
can comprise depositing a first superconducting material onto a
substrate. The method can also comprise forming an insulating
barrier on a surface of the first superconducting material that is
opposite to the substrate. Further, the method can comprise
depositing a second superconducting material over the insulating
barrier to form a Josephson junction. An advantage of such a method
can be that the method can enable the use of electron beam
lithography and/or optical lithography in the manufacturing of one
or more gradiometric SQUIDs.
[0012] In some examples of the method, forming the insulating
barrier can comprise oxidizing the first superconductor material.
An advantage of such a method can be that the method can enable the
use of superconductor-insulator-superconductor Josephson junctions
to facilitate a crossover of superconducting material in a
gradiometric SQUID that is suitable for quantum qubits.
[0013] According to an embodiment, a method is provided. The method
can comprise forming a first pattern of superconducting material on
a substrate. The method can also comprise forming an insulating
barrier adjacent to the first pattern of superconducting material
such that the first pattern of superconducting material separates
the insulating barrier from the substrate. Further, the method can
comprise forming a second pattern of superconducting material
across the insulating barrier to form a Josephson junction. An
advantage of such a method is that such a method can facilitate
creation of a parallel gradiometric SQUID that can allow for
frequency tuning using an external magnetic flux.
[0014] In some examples of the method, the forming the first
superconducting material can comprise evaporating the first
superconductor material onto the semiconductor substrate. Also, the
forming the second superconducting material can comprise
evaporating the second superconducting material over the insulating
barrier. An advantage of such a method can be that the method
enables use of the Manhattan style fabrication technique to
streamline a manufacturing of one or more gradiometric SQUIDs that
are suitable for quantum qubits.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 illustrates a diagram of an example, non-limiting
dipole gradiometric superconducting quantum interface device in
accordance with one or more embodiments described herein.
[0016] FIG. 2 illustrates a diagram of an example, non-limiting
quadrupole pole gradiometric superconducting quantum interface
device in accordance with one or more embodiments described
herein.
[0017] FIG. 3 illustrates a diagram of an example, non-limiting
multipole gradiometric superconducting quantum interface device in
accordance with one or more embodiments described herein.
[0018] FIG. 4A illustrates a diagram of an example, non-limiting
dipole implementation of a gradiometric superconducting quantum
interface device during a first stage of manufacturing in
accordance with one or more embodiments described herein.
[0019] FIG. 4B illustrates a diagram of an example, non-limiting
quadrupole pole implementation of a gradiometric superconducting
quantum interface device during a first stage of manufacturing in
accordance with one or more embodiments described herein.
[0020] FIG. 4C illustrates a diagram of an example, non-limiting
multipole implementation of a gradiometric superconducting quantum
interface device during a first stage of manufacturing in
accordance with one or more embodiments described herein.
[0021] FIG. 5A illustrates a diagram of an example, non-limiting
dipole implementation of a gradiometric superconducting quantum
interface device during a second stage of manufacturing in
accordance with one or more embodiments described herein.
[0022] FIG. 5B illustrates a diagram of an example, non-limiting
quadrupole pole implementation of a gradiometric superconducting
quantum interface device during a second stage of manufacturing in
accordance with one or more embodiments described herein.
[0023] FIG. 5C illustrates a diagram of an example, non-limiting
multipole implementation of a gradiometric superconducting quantum
interface device during a second stage of manufacturing in
accordance with one or more embodiments described herein.
[0024] FIG. 6A illustrates a diagram of an example, non-limiting
dipole implementation of a gradiometric superconducting quantum
interface device during a third stage of manufacturing in
accordance with one or more embodiments described herein.
[0025] FIG. 6B illustrates a diagram of an example, non-limiting
quadrupole pole implementation of a gradiometric superconducting
quantum interface device during a third stage of manufacturing in
accordance with one or more embodiments described herein.
[0026] FIG. 6C illustrates a diagram of an example, non-limiting
multipole implementation of a gradiometric superconducting quantum
interface device during a third stage of manufacturing in
accordance with one or more embodiments described herein.
[0027] FIG. 7A illustrates a diagram of an example, non-limiting
dipole implementation of a gradiometric superconducting quantum
interface device during a fourth stage of manufacturing in
accordance with one or more embodiments described herein.
[0028] FIG. 7B illustrates a diagram of an example, non-limiting
quadrupole pole implementation of a gradiometric superconducting
quantum interface device during a fourth stage of manufacturing in
accordance with one or more embodiments described herein.
[0029] FIG. 7C illustrates a diagram of an example, non-limiting
multipole implementation of a gradiometric superconducting quantum
interface device during a fourth stage of manufacturing in
accordance with one or more embodiments described herein.
[0030] FIG. 8 illustrates a flow diagram of an example,
non-limiting method that can facilitate manufacturing of one or
more gradiometric superconducting quantum interface devices in
accordance with one or more embodiments described herein.
[0031] FIG. 9 illustrates a flow diagram of an example,
non-limiting method that can facilitate manufacturing of one or
more gradiometric superconducting quantum interface devices in
accordance with one or more embodiments described herein.
[0032] FIG. 10 illustrates a flow diagram of an example,
non-limiting method that can facilitate manufacturing of one or
more gradiometric superconducting quantum interface devices in
accordance with one or more embodiments described herein.
DETAILED DESCRIPTION
[0033] The following detailed description is merely illustrative
and is not intended to limit embodiments and/or application or uses
of embodiments. Furthermore, there is no intention to be bound by
any expressed or implied information presented in the preceding
Background or Summary sections, or in the Detailed Description
section.
[0034] One or more embodiments are now described with reference to
the drawings, wherein like referenced numerals are used to refer to
like elements throughout. In the following description, for
purposes of explanation, numerous specific details are set forth in
order to provide a more thorough understanding of the one or more
embodiments. It is evident, however, in various cases, that the one
or more embodiments can be practiced without these specific
details.
[0035] Given the above problems with conventional gradiometric
SQUIDs, the present disclosure can be implemented to produce a
solution to one or more of these problems in the form of one or
more gradiometric parallel SQUIDs without conventional crossover
locations that comprise a dielectric spacer. Advantageously, the
one or more gradiometric parallel SQUIDs described herein do not
require the positioning of dielectric material that is common to
conventional gradiometric SQUIDs, do not create isolated segments
of superconducting material (e.g., islands of superconducting
material), and/or can be suitable for superconducting quantum bits.
Further, the one or more gradiometric parallel SQUIDs included in
the various embodiments herein can be less sensitive to absolute
magnetic flux variations than conventional gradiometric SQUIDs and
therefore can be less prone to dephasing due to bias flux noise
and/or charge noise than conventional gradiometric implementations.
Additionally, the various embodiments of the one or more
gradiometric SQUIDs described herein can allow for frequency tuning
using one or more external magnetic fluxes.
[0036] Various embodiments described herein can regard one or more
gradiometric parallel SQUIDs comprising one or more Josephson
junctions and that do not require conventional crossover locations
nor introduce islands of superconducting material. The one or more
gradiometric parallel SQUIDs described herein can be well suited
for implementation using double angle evaporation, that can be used
for superconducting qubits. Further, in one or more embodiments the
gradiometric parallel SQUIDs can be characterized by a compact
design that can be implemented using electron beam lithography
and/or optical lithography. Additionally, various embodiments
described herein can regard one or more methods of manufacturing
the one or more gradiometric parallel SQUIDs. For example, in one
or more embodiments a thin insulating barrier can be constructed on
a top surface of a loop of superconducting material; whereupon a
pattern of a second superconducting material can be deposited
across the loop, thereby enabling for one or more Josephson
junctions between the two superconducting materials. The one or
more gradiometric parallel SQUIDs can comprise two or more loops of
superconducting material, wherein circulating current through the
one or more Josephson junctions can depend on a difference in
magnetic field in the two loops. Thus, the various gradiometric
parallel SQUIDs described herein can be sensitive to spatial
variations in magnetic fields rather than magnetic field magnitudes
(e.g., which is common to conventional gradiometric SQUIDs).
[0037] FIG. 1 illustrates a diagram of an example, non-limiting
top-down view of a gradiometric SQUID 100 that can comprise one or
more Josephson junctions 102 in accordance with one or more
embodiments described herein. As shown in FIG. 1, the gradiometric
SQUID 100 can be a parallel SQUID comprising one or more first
superconducting materials 104 located on one or more substrates 106
and operably coupled to one or more first capacitor pads 108.
Additionally, the gradiometric SQUID 100 can comprise one or more
second superconducting materials 110 located on the one or more
substrates 106 and operably coupled to one or more second capacitor
pads 112.
[0038] The one or more substrates 106 can be, for example, one or
more semiconductor substrates. The one or more substrates 106 can
support one or more features of the one or more gradiometric SQUIDs
100. Example materials that can comprise the one or more substrates
106 can include, but are not limited to: silicon, germanium,
silicon carbide, carbon doped silicon, compound semiconductors
(e.g., comprising elements from periodic table groups III, IV,
and/or V), silicon oxide, a combination thereof, and/or the like.
For instance, the one or more substrates 106 can be a bulk silicon
wafer and/or a silicon-on-insulator ("SOT") wafer. Additionally,
the one or more substrates 106 can comprise electronic structures
such as isolation wires (not shown). Further, the one or more
substrates 106 can be characterized by one or more crystalline
structures. For example, the one or more substrates 106 can
comprise silicon <100>, silicon <110>, and/or silicon
<111>, as described using Miller indices. One of ordinary
skill in the art will readily recognize that the thickness of the
one or more substrates 106 can vary depending on: the composition
of the one or more substrates 106, the desired function of the
gradiometric SQUID 100, a combination thereof, and/or the like.
[0039] The one or more first superconducting materials 104 can be
positioned on the one or more substrates 106 in one or more first
patterns. For example, the one or more first superconducting
materials 104 can be arranged in a ring formation (e.g., as shown
in FIG. 1), wherein the ring can have a circular shape, a polygonal
shape (e.g., as shown in FIG. 1), and/or an irregular shape.
Example materials that can comprise the one or more first
superconducting materials 104 can include, but are not limited to:
aluminum, niobium, titanium, rhenium, indium, tungsten, titanium
niobite, niobium titanium niobate, type-1 superconducting
materials, type-2 superconducting materials, alloys thereof,
composites thereof, combinations thereof, and/or the like. The one
or more first patterns of the one or more first superconducting
materials 104 can comprise a uniform distribution of the one or
more first superconducting materials 104. Alternatively, the one or
more first patterns of the one or more first superconducting
materials 104 can comprise a non-uniform distribution of the one or
more first superconducting materials 104. For example, the one or
more first superconducting materials 104 can comprise a first
superconducting metal located at one portion of the first pattern
and a second superconducting metal located at another portion of
the first pattern. Thus, the first pattern of the one or more first
superconducting materials 104 can be electrically continuous with a
varying composition of the one or more first superconducting
materials 104 at different portions of the first pattern.
[0040] One of ordinary skill in the art will recognize that a
thickness (e.g., a height of extension from the one or more
substrates 106) of the one or more first superconducting materials
104 can vary depending on the composition of the one or more first
superconducting materials 104 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the thickness of the
one or more first superconducting materials 104 can be exemplary
greater than or equal to 0.5 microns and less than or equal to 1000
microns. Similarly, a width (e.g., along the "Y" axis where the one
or more first superconducting materials 104 meet the one or more
first capacitor pads 108 in the example implementation presented in
FIG. 1) of the one or more first superconducting materials 104 can
vary depending on the composition of the one or more first
superconducting materials 104 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the width of the one or
more first superconducting materials 104 can be exemplary greater
than or equal to 0.5 microns and less than or equal to 1000
microns. The one or more first superconducting materials 104 can be
operably (e.g., electrically) coupled to one or more first
capacitor pads 108.
[0041] Each of the one or more first capacitor pads 108 can
correlate to a respective magnetic pole of the gradiometric SQUID
100. The one or more first capacitor pads 108 can be connected to
the one or more first superconducting materials 104 and/or can
oscillate at a frequency of the subject qubit facilitated by the
gradiometric SQUID 100. While FIG. 1 depicts the one or more first
capacitor pads 108 having a rectangular shape, the architecture of
the one or more first capacitor pads 108 is not so limited. One of
ordinary skill in the art will recognize that the one or more first
capacitor pads 108 can have a variety of shapes dependent of the
functionality of the gradiometric SQUID 100. Example materials that
can comprise the one or more first capacitor pads 108 can include,
but are not limited to: aluminum, niobium, titanium, rhenium,
indium, tungsten, titanium niobite, niobium titanium niobate, a
combination thereof, and/or the like.
[0042] The one or more second superconducting materials 110 can be
positioned on the one or more substrates 106 in one or more second
patterns. For example, the one or more second superconducting
materials 110 can be arranged in a path formation (e.g., as shown
in FIG. 1), wherein the path can extend straight (e.g., as shown in
FIG. 1), can comprise bends, and/or can comprise curves. Example
materials that can comprise the one or more second superconducting
materials 110 can include, but are not limited to: aluminum,
niobium, titanium, rhenium, indium, tungsten, titanium niobite,
niobium titanium niobite, type-1 superconducting materials, type-2
superconducting materials, alloys thereof, composites thereof,
combinations thereof, and/or the like. In one or more embodiments,
the one or more second superconducting materials 110 can comprise
the same materials and/or can be characterized by the same or
substantially same composition as the one or more first
superconducting materials 104. Alternatively, in one or more
embodiments, the one or more second superconducting materials 110
can comprise different materials and/or can be characterized by a
different composition as the one or more first superconducting
materials 104.
[0043] Further, the one or more second patterns of the one or more
second superconducting materials 110 can comprise a uniform
distribution of the one or more second superconducting materials
110. Alternatively, the one or more second patterns of the one or
more second superconducting materials 110 can comprise a
non-uniform distribution of the one or more second superconducting
materials 110. For example, the one or more second superconducting
materials 110 can comprise a first superconducting metal located at
one portion of the second pattern and a second superconducting
metal located at another portion of the second pattern. Thus, the
second pattern of the one or more second superconducting materials
110 can be electrically continuous with a varying composition of
the one or more second superconducting materials 110 at different
portions of the second pattern.
[0044] One of ordinary skill in the art will recognize that a
thickness (e.g., a height of extension from the one or more
substrates 106) of the one or more second superconducting materials
110 can vary depending on the composition of the one or more second
superconducting materials 110 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the thickness of the
one or more second conducting materials 110 can be exemplary
greater than or equal to 0.5 microns and less than or equal to 1000
microns. Similarly, a width (e.g., along the "Y" axis where the one
or more second conducting materials 110 meet the one or more second
capacitor pads 112 in the example implementation presented in FIG.
1) of the one or more second superconducting materials 110 can vary
depending on the composition of the one or more second
superconducting materials 110 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the width of the one or
more second conducting materials 110 can be exemplary greater than
or equal to 0.5 microns and less than or equal to 1000 microns. The
one or more second superconducting materials 110 can be operably
(e.g., electrically) coupled to one or more second capacitor pads
112.
[0045] Each of the one or more second capacitor pads 108 can
correlate to a respective magnetic pole of the gradiometric SQUID
100. Thus, the gradiometric SQUID 100 depicted in FIG. 1 can be a
dipole implementation of the various features of the gradiometric
SQUID 100 described herein. The one or more second capacitor pads
112 can be connected to the one or more second superconducting
materials 110 and/or can oscillate at a frequency of the subject
qubit facilitated by the gradiometric SQUID 100. While FIG. 1
depicts the one or more second capacitor pads 112 having a
rectangular shape, the architecture of the one or more second
capacitor pads 112 is not so limited. One of ordinary skill in the
art will recognize that the one or more second capacitor pads 112
can have a variety of shapes dependent of the functionality of the
gradiometric SQUID 100. Example materials that can comprise the one
or more second capacitor pads 112 can include, but are not limited
to: titanium, rhenium, indium, tungsten, titanium niobite, niobium
titanium niobate, a combination thereof, and/or the like.
[0046] One or more Josephson junctions 102 can be located at one or
more positions where the one or more first superconducting
materials 104 and the one or more second superconducting materials
110 overlap. In other words, one or more Josephson junctions 102
can be located at one or more positions where the one or more
second patterns (e.g., paths of second superconducting material
110) extend over the one or more first patterns (e.g., rings of
first superconducting material 104). As shown in FIG. 1, the one or
more Josephson junctions 102 can be depicted by a dash lined "X"
FIG. 1. In one or more embodiments, the one or more Josephson
junctions 102 can be superconductor-insulator-superconductor
("SIS") Josephson junctions 102. For example, the one or more
Josephson junctions 102 can comprise a thin insulating barrier
between the one or more first superconducting materials 104 and the
one or more second superconducting materials 110. The thin
insulating barrier can weakly connect the one or more first
superconducting materials 104 and the one or more second
superconducting materials 110 to facilitate tunneling in accordance
with the Josephson effect. Further, the one or more Josephson
junctions 102 can be bicrystal grain-boundary junctions or
biepitaxial gran-boundary junctions, step-edge junctions, via
junctions, crystal junctions, and/or the like.
[0047] In one or more embodiments, the one or more Josephson
junctions 102 can connect the one or more first patterns (e.g.,
rings) of the one or more first superconducting materials 104 and
the one or more second patterns (e.g., paths) of the one or more
second superconducting materials 110 to create a plurality of loops
that can facilitate a plurality of magnetic fluxes (e.g., a first
magnetic flux depicted by ".PHI..sub.ext1" in FIG. 1 and/or a
second magnetic flux depicted by ".PHI..sub.ext2"). For example, a
first portion of the one or more first superconducting materials
104 can comprise a first layer of a respective Josephson junction
102, a second portion of the one or more second superconducting
materials 110 can comprise a second layer of the respective
Josephson junction 102, and/or a thin insulating barrier located
between the first portion and the second portion can comprise a
third layer the respective Josephson junction 102. As shown in FIG.
1, the second pattern (e.g., comprising the one or more second
superconducting materials 110) can extend from the one or more
second capacitor pad 112 across the first pattern (e.g., comprising
the one or more first superconducting materials 104). Additionally,
a Josephson junction 102 can be located at one or more positions
where the first pattern and second pattern overlap (e.g., where the
one or more second superconducting materials 110 cross over the one
or more first superconducting materials 104). In one or more
embodiments, each pattern of superconducting material (e.g., the
first pattern of the one or more first superconducting material 104
and/or the second pattern of the one or more second superconducting
material 110) can extend across each other to operably connect to a
respective capacitor pad (e.g., a respective first capacitor pad
108 and/or a respective second capacitor pad 112). While a dipole
gradiometric SQUID 100 is depicted in FIG. 1, the architecture of
the one or more gradiometric SQUIEDS is not so limited.
[0048] FIG. 2 illustrates a diagram of an example, non-limiting
top-down view of a gradiometric SQUID 100 having a quadrupole pole
implementation in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. As
shown in FIG. 2, the one or more gradiometric SQUIDs 100 can
comprise a plurality of first capacitor pads 108 and/or a plurality
of second capacitor pads 112. For example, the gradiometric SQUID
100 can comprise two first capacitor pads 108 and/or two second
capacitor pads 112 for a total of four capacitor pads and/or four
respective magnetic poles. For instance, the first pattern (e.g., a
ring) of the one or more first superconducting materials 104 can be
operably (e.g., electrically) connected to two respective first
capacitor pads 108 (e.g., as shown in FIG. 2). Likewise, the second
pattern (e.g., a path) of the one or more second superconducting
materials 110 can be operably (e.g., electrically) connected to two
respective second capacitor pads 112.
[0049] While FIGS. 1 and 2 depict one or more gradiometric SQUIDs
100 that can facilitate two magnetic fluxes, the architecture of
the one or more gradiometric SQUIDs 100 is not so limited.
Likewise, while FIGS. 1 and 2 depict one or more gradiometric
SQUIDs 100 that comprise two patterns of superconducting materials
(e.g., the first pattern of one or more first superconducting
materials 104 and/or the second pattern of one or more second
superconducting materials 110), the architecture of the one or more
gradiometric SQUIDs 100 is not so limited.
[0050] FIG. 3 illustrates a diagram of an example, non-limiting
top-down view of a gradiometric SQUID 100 having a multipole pole
implementation in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. As
shown in FIG. 3, the one or more gradiometric SQUIDs 100 can
comprise three or more patterns of superconducting material to
facilitate four or more magnetic fluxes.
[0051] For example, the one or more first superconducting materials
104 (e.g., patterned in a circular ring shape in the exemplary
embodiment of FIG. 3) can be operably connected to a plurality of
first capacitor pads 108 (e.g., connected to four first capacitor
pads 108 in the exemplary embodiment of FIG. 3), wherein each
respective first capacitor pad 108 can correlate to a respective
magnetic pole. Additionally, the one or more second superconducting
materials 110 (e.g., patterned in a straight path in the exemplary
embodiment of FIG. 3) can be operably connected to a plurality of
second capacitor pads 112 (e.g., connected to two second capacitor
pads 112 in the exemplary embodiment of FIG. 3), wherein each
respective second capacitor pad 112 can correlate to a respective
magnetic pole. Moreover, the one or more gradiometric SQUIDs 100
can comprise one or more additional superconducting materials, such
as one or more third superconducting materials 302.
[0052] For instance, the one or more third superconducting
materials 302 can be positioned on the one or more substrates 106
in one or more third patterns. For example, the one or more third
superconducting materials 302 can be arranged in a path formation
(e.g., as shown in FIG. 3), wherein the path can extend straight
(e.g., as shown in FIG. 3), can comprise bends, and/or can comprise
curves. Example materials that can comprise the one or more third
superconducting materials 302 can include, but are not limited to:
aluminum, niobium, titanium, rhenium, indium, tungsten, titanium
niobite, niobium titanium niobate, alloys thereof, composites
thereof, combinations thereof, and/or the like. In one or more
embodiments, the one or more third superconducting materials 302
can comprise the same materials and/or can be characterized by the
same or substantially same composition as the one or more first
superconducting materials 104 and/or the one or more second
superconducting materials 110. Alternatively, in one or more
embodiments, the one or more third superconducting materials 302
can comprise different materials and/or can be characterized by a
different composition as the one or more first superconducting
materials 104 and/or the one or more second superconducting
materials 110.
[0053] Further, the one or more third patterns of the one or more
third superconducting materials 302 can comprise a uniform
distribution of the one or more third superconducting materials
302. Alternatively, the one or more third patterns of the one or
more third superconducting materials 302 can comprise a non-uniform
distribution of the one or more third superconducting materials
302. For example, the one or more third superconducting materials
302 can comprise a first superconducting metal located at one
portion of the third pattern and a second superconducting metal
located at another portion of the third pattern. Thus, the third
pattern of the one or more third superconducting materials 302 can
be electrically continuous with a varying composition of the one or
more third superconducting materials 302 at different portions of
the third pattern.
[0054] One of ordinary skill in the art will recognize that a
thickness (e.g., a height of extension from the one or more
substrates 106) of the one or more third superconducting materials
302 can vary depending on the composition of the one or more third
superconducting materials 302 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the thickness of the
one or more third superconducting materials 302 can be exemplary
greater than or equal to 0.5 microns and less than or equal to 1000
microns. Similarly, a width (e.g., along the "Y" axis where the one
or more third superconducting materials 302 meet the one or more
third capacitor pads 304 in the example implementation presented in
FIG. 3) of the one or more third superconducting materials 302 can
vary depending on the composition of the one or more third
superconducting materials 302 and/or functionality of the one or
more gradiometric SQUIDs 100. For instance, the width of the one or
more third superconducting materials 302 can be exemplary greater
than or equal to 0.5 microns and less than or equal to 1000
microns. The one or more third superconducting materials 302 can be
operably (e.g., electrically) coupled to one or more third
capacitor pads 304.
[0055] Each of the one or more third capacitor pads 304 can
correlate to respective magnetic pole of the gradiometric SQUID
100. Thus, the gradiometric SQUID 100 depicted in FIG. 3 can be a
multipole implementation of the various features of the
gradiometric SQUID 100 described herein. The one or more third
capacitor pads 304 can be connected to the one or more third
superconducting materials 302 and/or can oscillate at a frequency
of the subject qubit facilitated by the gradiometric SQUID 100.
While FIG. 3 depicts the one or more third capacitor pads 304
having a rectangular shape, the architecture of the one or more
third capacitor pads 304 is not so limited. One of ordinary skill
in the art will recognize that the one or more third capacitor pads
304 can have a variety of shapes dependent of the functionality of
the gradiometric SQUID 100. Example materials that can comprise the
one or more third capacitor pads 304 can include, but are not
limited to: aluminum, niobium, titanium, rhenium, indium, tungsten,
titanium niobite, niobium titanium niobate, a combination thereof,
and/or the like.
[0056] As shown in FIG. 3, one or more Josephson junctions 102 can
be located where one pattern of superconducting material overlaps
and/or otherwise cross over another pattern of superconducting
material. For example, one or more Josephson junctions 102 can be
located where the first pattern of the one or more first
superconducting materials 104 cross the third pattern of the one or
more third superconducting materials 302. For instance, one or more
Josephson junctions 102 can connect the first pattern of one or
more first superconducting materials 104 and the third pattern of
one or more third superconducting materials 302 just as one or more
Josephson junctions 102 can connect the first pattern of one or
more first superconducting materials 104 and the second pattern of
one or more second superconducting materials 110, as described
herein. Thus, the third pattern of one or more third
superconducting materials 302, along with one or more Josephson
junctions 102 connected to the third pattern, can create one or
more loops of superconducting material within the gradiometric
SQUID 100, which can facilitate the occurrence of additional
magnetic fluxes (e.g., the occurrence of four magnetic fluxes in
the exemplary embodiment of FIG. 3, wherein the magnetic fluxes are
respectively depicted by "".PHI..sub.ext1", ".PHI..sub.ext2",
"".PHI..sub.ext3", ".PHI..sub.ext4").
[0057] As shown in FIG. 3, the respective patterns of
superconducting material can overlap each other, cross each other,
and/or weave between each other. Additionally, the respective
patterns of superconducting material can extend from and/or extend
between respective capacitor pads.
[0058] FIG. 4A illustrates a diagram of an example, non-limiting
gradiometric SQUID 100 during a first stage of manufacturing in
accordance with one or more embodiments described herein.
Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 4A can depict the first stage of manufacturing of the
exemplary embodiment of FIG. 1.
[0059] During a first stage of manufacturing, a first portion of
the one or more first superconducting materials 104 can be
deposited onto the one or more substrates 106. Depositing the first
portion of the one or more first superconducting materials 104
during the first stage of manufacturing can partially form the
first pattern (e.g., can partially form a ring pattern).
Additionally, depositing the first portion of the one or more first
superconducting materials 104 during the first stage of
manufacturing can operably couple the one or more first
superconducting materials 104 to the one or more first capacitor
pads 108. As shown in FIG. 4A, during the first stage of
manufacturing the first portion of the one or more first
superconducting materials 104 can be deposited onto the one or more
substrates 106 at the desired location of the first pattern except
at the desired locations of the one or more Josephson junctions
102. For example, a gap in the first pattern of one or more first
superconducting materials 104 can be created where the one or more
Josephson junctions 102 can be located.
[0060] Deposition of the first portion of the one or more first
superconducting materials 104 during the first stage of
manufacturing can be facilitate by one or more deposition
techniques, which can include, but are not limited to: thermal
evaporation, electron beam evaporation, electron beam sputtering,
ion-sputtering, plasma sputtering, pulsed-laser sputtering,
molecular-beam epitaxy ("MBE") growth, epitaxial growth, a
combination thereof, and/or the like. One of ordinary skill in the
art will recognize that the type of deposition technique utilized
can vary depending on the composition of the first portion of the
one or more first superconducting materials 104 and/or the design
of the first pattern. Additionally, the deposition can be
facilitated by one or more lithography process, which can include,
but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like.
[0061] FIG. 4B illustrates another diagram of an example,
non-limiting gradiometric SQUID 100 during a first stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 4B can depict the first stage of manufacturing of the
exemplary embodiment of FIG. 2. The features of the first stage of
manufacturing described herein with regards to FIG. 4A can also be
implemented in the first stage of manufacturing in any of the
various embodiments of the one or more gradiometric SQUIDs 100,
such as the first stage of manufacturing depicted in FIG. 4B.
[0062] FIG. 4C illustrates a further diagram of an example,
non-limiting gradiometric SQUID 100 during a first stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 4C can depict the first stage of manufacturing of the
exemplary embodiment of FIG. 3. The features of the first stage of
manufacturing described herein with regards to FIG. 4A can also be
implemented in the first stage of manufacturing in any of the
various embodiments of the one or more gradiometric SQUIDs 100,
such as the first stage of manufacturing depicted in FIG. 4C.
[0063] Additionally, as disclosed in FIG. 4C, a first portion of
the one or more second superconducting materials 110 can be
deposited during the first stage of manufacturing to partially
define the second pattern. For example, the first portion of the
one or more first superconducting materials 104 can have the same
composition as the first portion of the one or more second
superconducting materials 110; thereby facilitating a common
deposition during the fourth stage of manufacturing. Therefore, at
least a portion of the second pattern (e.g., comprising the one or
more second superconducting materials 110) can be deposited along
with the first portion of the one or more first superconducting
materials 104.
[0064] FIG. 5A illustrates a diagram of an example, non-limiting
gradiometric SQUID 100 during a second stage of manufacturing in
accordance with one or more embodiments described herein.
Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 5A can depict the second stage of manufacturing of
the exemplary embodiment of FIG. 1.
[0065] During a second stage of manufacturing, a second portion of
the one or more first superconducting materials 104 can be
deposited onto the one or more substrates 106. Depositing the
second portion of the one or more first superconducting materials
104 during the second stage of manufacturing can complete the first
pattern (e.g., a ring pattern). As shown in FIG. 5A, the location
of the deposition of the second portion of the one or more first
superconducting materials 104 can be indicated by a dash lined box.
The second portion of the one or more first superconducting
materials 104 can be deposited at respective locations where there
can be respective Josephson junctions 102 connecting the one or
more first superconducting materials 104 to one or more other
patterns of superconducting materials (e.g., the second pattern of
the one or more second superconducting materials 110).
Additionally, the composition of the second portion of the one or
more first superconducting materials 104 can be the same or
different than the composition of the first portion of the one or
more first superconducting materials 104. In one or more
embodiments, the second portion of the first superconducting
materials 104 can be a superconducting metal that can be subject to
oxidation, such as aluminum.
[0066] Deposition of the second portion of the one or more first
superconducting materials 104 during the second stage of
manufacturing can be facilitate by one or more deposition
techniques, which can include, but are not limited to: thermal
evaporation, electron beam evaporation, electron beam sputtering,
ion-sputtering, plasma sputtering, pulsed-laser sputtering, MBE
growth, epitaxial growth, a combination thereof, and/or the like.
One of ordinary skill in the art will recognize that the type of
deposition technique utilized can vary depending on the composition
of the second portion of the one or more first superconducting
materials 104 and/or the design of the first pattern. Additionally,
the deposition can be facilitated by one or more lithography
process, which can include, but are not limited to: electron beam
lithography, optical lithography, deep-ultraviolet lithography,
direct laser lithography, a combination thereof, and/or the
like.
[0067] FIG. 5B illustrates another diagram of an example,
non-limiting gradiometric SQUID 100 during a second stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 5B can depict the second stage of manufacturing of
the exemplary embodiment of FIG. 2. The features of the second
stage of manufacturing described herein with regards to FIG. 5A can
also be implemented in the second stage of manufacturing in any of
the various embodiments of the one or more gradiometric SQUIDs 100,
such as the second stage of manufacturing depicted in FIG. 5B.
[0068] FIG. 5C illustrates a further diagram of an example,
non-limiting gradiometric SQUID 100 during a second stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 5C can depict the second stage of manufacturing of
the exemplary embodiment of FIG. 3. The features of the second
stage of manufacturing described herein with regards to FIG. 5A can
also be implemented in the second stage of manufacturing in any of
the various embodiments of the one or more gradiometric SQUIDs 100,
such as the second stage of manufacturing depicted in FIG. 5C.
[0069] Additionally, FIG. 5C illustrates that during the second
stage of manufacturing, one or more portions of other patterns of
superconducting material can also be deposited. Also, as depicted
in FIG. 5C, a second portion of the one or more first
superconducting materials 104 (e.g., defined by dashed lines in
FIG. 5C) can be deposited during the second stage of manufacturing
to further define the first pattern. The pattern portions deposited
during the second stage of manufacturing can comprise the same
materials. For example, as shown in FIG. 5C, the one or more third
superconducting materials 302 can be deposited during the second
stage of manufacturing along with the second portion of the one or
more first superconducting materials 104, wherein the second
portion of the one or more first superconducting materials 104 and
the one or more third superconducting materials 302 can have the
same composition. For instance, the one or more third
superconducting materials 302 and/or the one or more first
superconducting materials 104 comprising the second portion of the
first pattern can be a superconducting metal that can be subject to
oxidation, such as aluminum.
[0070] FIG. 6A illustrates a diagram of an example, non-limiting
gradiometric SQUID 100 during a third stage of manufacturing in
accordance with one or more embodiments described herein.
Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 6A can depict the second stage of manufacturing of
the exemplary embodiment of FIG. 1.
[0071] During a third stage of manufacturing, one or more
insulating materials 602 can be formed. The one or more insulating
materials 602 can serve as one or more thin insulating barriers
comprised with the one or more Josephson junctions 102. For
example, the one or more insulating materials 602 can be formed at
the future locations of Josephson junctions 102.
[0072] In one or more embodiments, the one or more insulating
materials 602 can be formed by oxidizing the superconducting
materials deposited during the second stage of manufacturing. For
example, as shown in FIG. 6A, the second portion of the one or more
first superconducting materials 104 can be oxidized to form the one
or more insulating materials 602. For instance, the second portion
of the first superconducting materials 104 can be aluminum, which
can be oxidized during the third stage of manufacturing to form one
or more insulating materials 602 of aluminum oxide.
[0073] In various embodiments, the one or more insulating materials
602 can be formed on a top surface (e.g., a surface facing away
from the one or more substrates 106) of a superconducting material,
such as one or more sections of the first pattern of the one or
more first superconducting materials 104. One of ordinary skill in
the art will recognize that a thickness (e.g., a height of
extension from the top surface of a superconducting material) of
the one or more insulating materials 602 can vary depending on the
composition of the one or more insulating materials 602 and/or
functionality of the one or more gradiometric SQUIDs 100. For
instance, the thickness of the one or more insulating materials 602
can be exemplary greater than or equal to 0.5 microns and less than
or equal to 1000 microns.
[0074] FIG. 6B illustrates another diagram of an example,
non-limiting gradiometric SQUID 100 during a third stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 6B can depict the third stage of manufacturing of the
exemplary embodiment of FIG. 2. The features of the third stage of
manufacturing described herein with regards to FIG. 6A can also be
implemented in the third stage of manufacturing in any of the
various embodiments of the one or more gradiometric SQUIDs 100,
such as the third stage of manufacturing depicted in FIG. 6B.
[0075] FIG. 6C illustrates a further diagram of an example,
non-limiting gradiometric SQUID 100 during a third stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 6C can depict the third stage of manufacturing of the
exemplary embodiment of FIG. 3. The features of the third stage of
manufacturing described herein with regards to FIG. 6A can also be
implemented in the third stage of manufacturing in any of the
various embodiments of the one or more gradiometric SQUIDs 100,
such as the third stage of manufacturing depicted in FIG. 6C.
[0076] Additionally, FIG. 6C illustrates that during the third
stage of manufacturing, a portion of superconducting material can
be isolated for formation of the one or more insulating materials
602. For example, the third pattern of the one or more third
superconducting materials 302 can have a uniform or substantially
uniform composition, wherein some sections of the one or more third
superconducting materials 302 can facilitate formation of the one
or more insulating materials 602 (e.g., be oxidized) while other
sections can remain unmodified during the third stage of
manufacturing. For instance, one or more masking layers can be used
during the third stage of manufacturing to direct the formation of
the one or more insulating materials 602. Alternatively, in various
embodiments the one or more insulating materials 602 can be formed
on any suitable superconducting materials without directing
formation to particular locations (e.g., the entire third pattern
can be subject to oxidation and thereby form an oxidized top layer
to serve as the one or more insulating materials 602).
[0077] FIG. 7A illustrates a diagram of an example, non-limiting
gradiometric SQUID 100 during a fourth stage of manufacturing in
accordance with one or more embodiments described herein.
Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 7A can depict the fourth stage of manufacturing of
the exemplary embodiment of FIG. 1.
[0078] A fourth stage of manufacturing can comprise depositing
additional superconducting material to: form one or more additional
patterns of superconducting material, complete one or more
partially existing patterns of superconducting material, and/or
form one or more Josephson junctions 102. For example, as shown in
FIG. 7A, during the fourth stage of manufacturing, the one or more
second superconducting materials 110 can be deposited onto the one
or more insulating materials 602 and/or the one or more substrates
106 such that the second pattern of one or more second
superconducting materials 110 can be formed. As shown in FIG. 7A,
the deposition of superconducting material during the fourth stage
of manufacturing can form the second pattern, which can extend form
the one or more second capacitor pads 112 across the first pattern
(e.g., comprising the one or more first superconducting materials
104) and the one or more insulating materials 602; thereby forming
one or more Josephson junctions 102 and/or two loops of
superconducting material.
[0079] Deposition of the additional superconducting material (e.g.,
the one or more second superconducting materials 110) during the
fourth stage of manufacturing can be facilitate by one or more
deposition techniques, which can include, but are not limited to:
thermal evaporation, electron beam evaporation, electron beam
sputtering, ion-sputtering, plasma sputtering, pulsed-laser
sputtering, MBE growth, epitaxial growth, a combination thereof,
and/or the like. One of ordinary skill in the art will recognize
that the type of deposition technique utilized can vary depending
on the composition of the additional superconducting materials
(e.g., the one or more second superconducting materials 110) and/or
the design of the first pattern. Additionally, the deposition can
be facilitated by one or more lithography process, which can
include, but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like.
[0080] FIG. 7B illustrates another diagram of an example,
non-limiting gradiometric SQUID 100 during a fourth stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 7B can depict the fourth stage of manufacturing of
the exemplary embodiment of FIG. 2. The features of the fourth
stage of manufacturing described herein with regards to FIG. 7A can
also be implemented in the fourth stage of manufacturing in any of
the various embodiments of the one or more gradiometric SQUIDs 100,
such as the fourth stage of manufacturing depicted in FIG. 7B.
[0081] FIG. 7C illustrates a further diagram of an example,
non-limiting gradiometric SQUID 100 during a fourth stage of
manufacturing in accordance with one or more embodiments described
herein. Repetitive description of like elements employed in other
embodiments described herein is omitted for sake of brevity. For
example, FIG. 7C can depict the fourth stage of manufacturing of
the exemplary embodiment of FIG. 3. The features of the fourth
stage of manufacturing described herein with regards to FIG. 7A can
also be implemented in the fourth stage of manufacturing in any of
the various embodiments of the one or more gradiometric SQUIDs 100,
such as the fourth stage of manufacturing depicted in FIG. 7C.
[0082] Additionally, as shown in FIG. 7C, during the fourth stage
of manufacturing a third portion (e.g., defined by dashed lines in
FIG. 7C) of the first pattern of the one or more first
superconducting materials 104 can be deposited to complete the
first pattern and/or form one or more Josephson junctions 102.
Further, a second portion of the one or more second superconducting
material 110 can be deposited to connect to the previously
deposited first portion of the one or more second superconducting
materials 110. The pattern portions deposited during the fourth
stage of manufacturing can comprise the same materials. For
example, the third portion of the one or more first superconducting
materials 104 can have the same composition as the second portion
of the one or more second superconducting materials 110; thereby
facilitating a common deposition during the fourth stage of
manufacturing. Thus, the fourth stage of manufacturing can complete
one or more partially established patterns of superconducting
material, such as the first pattern (e.g., comprising the one or
more first superconducting materials 104) and/or the second pattern
(e.g., comprising the one or more second superconducting materials
110). Moreover, the deposition during the fourth stage of
manufacturing can create one or more Josephson junctions 102 and/or
a plurality of loops of superconducting material.
[0083] Thus, the manufacturing stages described with regards to
FIGS. 4A-7C can achieve multiple electrically continuous patterns
of superconducting materials. For example, a first electrically
continuous pattern of the one or more first superconducting
materials 104 can be formed, a second electrically continuous
pattern of the one or more second superconducting materials 110 can
be formed, and/or a third electrically continuous pattern of the
one or more third superconducting materials 302 can be formed.
Additionally, the respective patterns can comprise non-uniform
distributions of superconducting materials. For example, the first
electrically continuous pattern of the one or more first
superconducting materials 104 can comprise: a superconducting
material of the one or more first superconducting materials 104 at
a first portion of the first pattern, another superconducting
material of the one or more superconducting materials 104 at a
second portion of the first pattern, and/or still another
superconducting material of the one or more superconducting
materials 104 at a third portion of the first pattern. Moreover,
one of ordinary skill in the art will recognize that further
patterns of superconducting materials in addition to the three
shown in FIGS. 4A-7C are also envisaged.
[0084] FIG. 8 illustrates a flow diagram of an example,
non-limiting method 800 that can facilitate manufacturing one or
more gradiometric SQUIDs 100 in accordance with one or more
embodiments described herein. Repetitive description of like
elements employed in other embodiments described herein is omitted
for sake of brevity.
[0085] At 802, the method 800 can comprise depositing one or more
first superconducting materials 104 onto one or more substrates 106
(e.g., as described herein with regards to the first stage and/or
second stage of manufacturing exemplarily depicted in FIGS. 4A-5C).
The depositing at 802 can be facilitate by one or more deposition
techniques, which can include, but are not limited to: evaporation,
thermal evaporation, electron beam evaporation, electron beam
sputtering, ion-sputtering, plasma sputtering, pulsed-laser
sputtering, MBE growth, epitaxial growth, a combination thereof,
and/or the like. The depositing at 802 can form one or more first
patterns of the one or more first superconducting materials 104.
For example, the one or more first patterns can be ring formations
as described in various embodiments herein. Additionally, the
depositing at 802 can facilitate operably (electrically) coupling
the one or more first superconducting materials 104 to one or more
first capacitor pads 108. Further, the deposition can be
facilitated by one or more lithography process, which can include,
but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like.
[0086] At 804, the method 800 can comprise forming one or more
insulating barriers (e.g., one or more insulating materials 602) on
a surface of the one or more first superconducting materials 104
that can be opposite to the one or more substrates 106 (e.g., as
described herein with regards to the third stage of manufacturing
exemplarily depicted in FIGS. 6A-6C). For example, the surface can
be a top surface of the one or more first superconducting materials
104.
[0087] In one or more embodiments, the forming at 804 can comprise
oxidizing one or more first conducting materials previously
deposited (e.g., at 802) onto the one or more substrates 106.
[0088] At 806, the method 800 can comprise depositing one or more
second superconducting materials 110 over the one or more
insulating barriers (e.g., one or more insulating materials 602) to
form one or more Josephson junctions 102 (e.g., as described herein
with regards to the fourth stage of manufacturing exemplarily
depicted in FIGS. 7A-7C). The depositing at 806 can be facilitate
by one or more deposition techniques, which can include, but are
not limited to: evaporation, thermal evaporation, electron beam
evaporation, electron beam sputtering, ion-sputtering, plasma
sputtering, pulsed-laser sputtering, MBE growth, epitaxial growth,
a combination thereof, and/or the like. The depositing at 806 can
form one or more second patterns of the one or more second
superconducting materials 110. Additionally, the deposition can be
facilitated by one or more lithography process, which can include,
but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like. For example,
the one or more second patterns can be path formations as described
in various embodiments herein. Additionally, the depositing at 806
can facilitate operably (electrically) coupling the one or more
second superconducting materials 110 to one or more second
capacitor pads 112. In one or more embodiments, the depositing at
806 can further complete one or more partially completed patterns
of superconducting material located on the one or more substrates
106.
[0089] FIG. 9 illustrates a flow diagram of an example,
non-limiting method 900 that can facilitate manufacturing one or
more gradiometric SQUIDs 100 in accordance with one or more
embodiments described herein. Repetitive description of like
elements employed in other embodiments described herein is omitted
for sake of brevity.
[0090] At 902, the method 900 can comprise forming a first pattern
(e.g., a ring formation) of superconducting material (e.g., one or
more first superconducting materials 104) on one or more substrates
106 (e.g., as described herein with regards to the first stage
and/or second stage of manufacturing exemplarily depicted in FIGS.
4A-5C). The forming at 902 can be facilitate by one or more
deposition techniques, which can include, but are not limited to:
evaporation, thermal evaporation, electron beam evaporation,
electron beam sputtering, ion-sputtering, plasma sputtering,
pulsed-laser sputtering, MBE growth, epitaxial growth, a
combination thereof, and/or the like. Further, the deposition can
be facilitated by one or more lithography process, which can
include, but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like. Additionally,
the forming at 902 can facilitate operably (electrically) coupling
the one or more superconducting materials (e.g., the one or more
first superconducting materials 104) to one or more first capacitor
pads 108. The first pattern formed at 902 can be a complete pattern
of superconducting material or a partial pattern of superconducting
material.
[0091] At 904, the method 900 can comprise forming one or more
insulating barriers (e.g., one or more insulating materials 602)
adjacent to the first pattern of the one or more superconducting
materials (e.g., one or more first superconducting materials 104)
such that the first pattern of superconducting material can
separate the one or more insulating barriers (e.g., one or more
insulating material 602) from the one or more substrates 106 (e.g.,
as described herein with regards to the third stage of
manufacturing exemplarily depicted in FIGS. 6A-6C). For example,
the one or more insulating barriers can be formed on a top surface
of the one or more superconducting materials. In one or more
embodiments, the forming at 904 can comprise oxidizing one or more
portions of the one or more superconducting materials.
[0092] At 906, the method 900 can comprise forming one or more
second patterns of superconducting material across the one or more
insulating barriers to form one or more Josephson junctions 102
(e.g., as described herein with regards to the fourth stage of
manufacturing exemplarily depicted in FIGS. 7A-7C). The forming at
906 can be facilitate by one or more deposition techniques, which
can include, but are not limited to: evaporation, thermal
evaporation, electron beam evaporation, electron beam sputtering,
ion-sputtering, plasma sputtering, pulsed-laser sputtering, MBE
growth, epitaxial growth, a combination thereof, and/or the like.
Further, the deposition can be facilitated by one or more
lithography process, which can include, but are not limited to:
electron beam lithography, optical lithography, deep-ultraviolet
lithography, direct laser lithography, a combination thereof,
and/or the like. Additionally, the forming at 906 can facilitate
operably (electrically) coupling the one or more superconducting
materials (e.g., one or more second superconducting materials 110)
to one or more second capacitor pads 112. In one or more
embodiments, the forming at 906 can further complete one or more
partially completed patterns of superconducting material located on
the one or more substrates 106.
[0093] FIG. 10 illustrates a flow diagram of an example,
non-limiting method 1000 that can facilitate manufacturing one or
more gradiometric SQUIDs 100 in accordance with one or more
embodiments described herein. Repetitive description of like
elements employed in other embodiments described herein is omitted
for sake of brevity.
[0094] At 1002, the method 1000 can comprise forming a first
portion of a first pattern (e.g., a ring formation) of
superconducting material (e.g., one or more first superconducting
materials 104) on one or more substrates 106 (e.g., as described
herein with regards to the first stage exemplarily depicted in
FIGS. 4A-4C). The forming at 1002 can be facilitate by one or more
deposition techniques, which can include, but are not limited to:
evaporation, thermal evaporation, electron beam evaporation,
electron beam sputtering, ion-sputtering, plasma sputtering,
pulsed-laser sputtering, MBE growth, epitaxial growth, a
combination thereof, and/or the like. Further, the deposition can
be facilitated by one or more lithography process, which can
include, but are not limited to: electron beam lithography, optical
lithography, deep-ultraviolet lithography, direct laser
lithography, a combination thereof, and/or the like. Additionally,
the forming at 1002 can facilitate operably (electrically) coupling
the one or more superconducting materials (e.g., the one or more
first superconducting materials 104) to one or more first capacitor
pads 108.
[0095] At 1004, the method 1000 can comprise forming a second
portion of the first pattern on the one or more substrates 106 and
connected to the first portion of the first pattern (e.g., as
described herein with regards to the first stage exemplarily
depicted in FIGS. 5A-5C). For example, the superconducting material
comprising the first portion of the first pattern can have a
different composition than the superconducting material comprising
the second portion of the first pattern. The forming at 1004 can be
facilitate by one or more deposition techniques, which can include,
but are not limited to: evaporation, thermal evaporation, electron
beam evaporation, electron beam sputtering, ion-sputtering, plasma
sputtering, pulsed-laser sputtering, MBE growth, epitaxial growth,
a combination thereof, and/or the like. Additionally, the
deposition can be facilitated by one or more lithography process,
which can include, but are not limited to: electron beam
lithography, optical lithography, deep-ultraviolet lithography,
direct laser lithography, a combination thereof, and/or the
like.
[0096] At 1006, the method 1000 can comprise forming one or more
insulating barriers (e.g., one or more insulating materials 602)
adjacent to the second portion such that the first pattern of
superconducting material can separate the one or more insulating
barriers (e.g., one or more insulating material 602) from the one
or more substrates 106 (e.g., as described herein with regards to
the third stage of manufacturing exemplarily depicted in FIGS.
6A-6C). For example, the one or more insulating barriers can be
formed on a top surface of the one or more superconducting
materials comprising the second portion of the first pattern. In
one or more embodiments, the forming at 1006 can comprise oxidizing
the second portion of the first pattern of one or more
superconducting materials.
[0097] At 1008, the method 1000 can comprise forming one or more
second patterns of superconducting material across the one or more
insulating barriers to form one or more Josephson junctions 102
(e.g., as described herein with regards to the fourth stage of
manufacturing exemplarily depicted in FIGS. 7A-7C). The forming at
1006 can be facilitate by one or more deposition techniques, which
can include, but are not limited to: evaporation, thermal
evaporation, electron beam evaporation, electron beam sputtering,
ion-sputtering, plasma sputtering, pulsed-laser sputtering, MBE
growth, epitaxial growth, a combination thereof, and/or the like.
Further, the deposition can be facilitated by one or more
lithography process, which can include, but are not limited to:
electron beam lithography, optical lithography, deep-ultraviolet
lithography, direct laser lithography, a combination thereof,
and/or the like. Additionally, the forming at 1006 can facilitate
operably (electrically) coupling the one or more superconducting
materials (e.g., one or more second superconducting materials 110)
to one or more second capacitor pads 112. In one or more
embodiments, the forming at 1008 can further complete one or more
partially completed patterns of superconducting material located on
the one or more substrates 106.
[0098] One of ordinary skill in the art will recognize that the
various features and/or embodiments of the stages of manufacturing
described herein with regards to FIG. 4A-7C can facilitate the
various features and/or embodiments of the methods described herein
(e.g., method 800, method 900, and/or method 1000). Further, the
various methods described herein can facilitate manufacturing of
any and/or all of the numerous embodiments described herein.
[0099] In addition, the term "or" is intended to mean an inclusive
"or" rather than an exclusive "or." That is, unless specified
otherwise, or clear from context, "X employs A or B" is intended to
mean any of the natural inclusive permutations. That is, if X
employs A; X employs B; or X employs both A and B, then "X employs
A or B" is satisfied under any of the foregoing instances.
Moreover, articles "a" and "an" as used in the subject
specification and annexed drawings should generally be construed to
mean "one or more" unless specified otherwise or clear from context
to be directed to a singular form. As used herein, the terms
"example" and/or "exemplary" are utilized to mean serving as an
example, instance, or illustration. For the avoidance of doubt, the
subject matter disclosed herein is not limited by such examples. In
addition, any aspect or design described herein as an "example"
and/or "exemplary" is not necessarily to be construed as preferred
or advantageous over other aspects or designs, nor is it meant to
preclude equivalent exemplary structures and techniques known to
those of ordinary skill in the art.
[0100] It is, of course, not possible to describe every conceivable
combination of components, products and/or methods for purposes of
describing this disclosure, but one of ordinary skill in the art
can recognize that many further combinations and permutations of
this disclosure are possible. Furthermore, to the extent that the
terms "includes," "has," "possesses," and the like are used in the
detailed description, claims, appendices and drawings such terms
are intended to be inclusive in a manner similar to the term
"comprising" as "comprising" is interpreted when employed as a
transitional word in a claim. The descriptions of the various
embodiments have been presented for purposes of illustration, but
are not intended to be exhaustive or limited to the embodiments
disclosed. Many modifications and variations will be apparent to
those of ordinary skill in the art without departing from the scope
and spirit of the described embodiments. The terminology used
herein was chosen to best explain the principles of the
embodiments, the practical application or technical improvement
over technologies found in the marketplace, or to enable others of
ordinary skill in the art to understand the embodiments disclosed
herein.
* * * * *