U.S. patent application number 16/516905 was filed with the patent office on 2020-01-23 for apparatus and method for treating substrate.
The applicant listed for this patent is SEMES CO., LTD.. Invention is credited to JINWOO JUNG, YONG HEE LEE, YOUNG HUN LEE, EUI SANG LIM.
Application Number | 20200027724 16/516905 |
Document ID | / |
Family ID | 69163072 |
Filed Date | 2020-01-23 |
United States Patent
Application |
20200027724 |
Kind Code |
A1 |
JUNG; JINWOO ; et
al. |
January 23, 2020 |
APPARATUS AND METHOD FOR TREATING SUBSTRATE
Abstract
An apparatus for treating a substrate comprises a chamber having
a processing space in which a process of treating the substrate is
performed and a fluid supply unit that supplies a treating fluid
into the chamber. The fluid supply unit comprises a supply line, at
least one orifice provided in the supply line, and a first heater
provided on the orifice or upstream of the orifice. The first
heater heats the treating fluid passing through the orifice to a
set temperature or more.
Inventors: |
JUNG; JINWOO; (Seoul,
KR) ; LEE; YOUNG HUN; (Cheonan-si, Chungcheongnam-do,
KR) ; LEE; YONG HEE; (Cheonan-si, Chungcheongnam-do,
KR) ; LIM; EUI SANG; (Cheonan-si, Chungcheongnam-do,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SEMES CO., LTD. |
Chungcheongnam-do |
|
KR |
|
|
Family ID: |
69163072 |
Appl. No.: |
16/516905 |
Filed: |
July 19, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67017 20130101;
F26B 3/02 20130101; H01L 21/02101 20130101; H01L 21/67103 20130101;
H01L 21/67051 20130101; H01L 21/6719 20130101; H01L 21/67028
20130101; H01L 21/67034 20130101; F26B 21/14 20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02; F26B 3/02 20060101 F26B003/02; F26B 21/14 20060101
F26B021/14; H01L 21/67 20060101 H01L021/67 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 23, 2018 |
KR |
10-2018-0085561 |
Claims
1. An apparatus for treating a substrate, the apparatus comprising:
a chamber having a processing space in which a process of treating
the substrate is performed; and a fluid supply unit configured to
supply a treating fluid into the chamber, wherein the fluid supply
unit comprises: a supply line; at least one orifice provided in the
supply line; and a first heater provided on the orifice or upstream
of the orifice, and wherein the first heater heats the treating
fluid passing through the orifice to a set temperature or more.
2. The apparatus of claim 1, wherein the treating fluid is
adiabatically expanded downstream of the orifice, and wherein the
set temperature is a temperature that allows the temperature of the
treating fluid adiabatically expanded after passing through the
orifice to be maintained at a critical temperature or more.
3. The apparatus of claim 1, wherein the supply line comprises: an
orifice region in which the orifice is provided; a front orifice
region upstream of the orifice region; and a rear orifice region
downstream of the orifice region, wherein the treating fluid forms
at least one turning point in a temperature-pressure phase diagram
while sequentially passing through the front orifice region, the
orifice region, and the rear orifice region, and wherein the
turning point is formed at a temperature higher than a critical
temperature of the treating fluid.
4. The apparatus of claim 1, wherein the set temperature is a
temperature that allows the treating fluid passing through the
orifice to change into a gaseous or supercritical state to
experience two-phase or less phase change.
5. The apparatus of claim 1, further comprising: a second heater
provided downstream of the orifice.
6. The apparatus of claim 1, wherein the treating fluid is carbon
dioxide.
7. The apparatus of claim 1, wherein the process is a process of
treating the substrate by using the treating fluid in a
supercritical state.
8. A method for treating a substrate, the method comprising:
performing a process of treating the substrate by dispensing a
supercritical fluid onto the substrate, wherein a treating fluid
flows through an orifice before dispensed onto the substrate, and
wherein the treating fluid is heated to a set temperature or more
before passing through the orifice.
9. The method of claim 8, wherein the temperature of the treating
fluid is lowered downstream of the orifice, and wherein the set
temperature is a temperature that allows the lowered temperature to
be maintained at a critical temperature or more.
10. The method of claim 8, wherein a supply line configured to
supply the treating fluid comprises: an orifice region in which the
orifice is provided; a front orifice region upstream of the orifice
region; and a rear orifice region downstream of the orifice region,
wherein the treating fluid forms at least one turning point in a
temperature-pressure phase diagram while sequentially passing
through the front orifice region, the orifice region, and the rear
orifice region, and wherein the turning point is formed at a
temperature higher than a critical temperature of the treating
fluid.
11. The method of claim 8, wherein the process is a process of
drying the substrate.
12. The method of claim 8, wherein the treating fluid is carbon
dioxide.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] A claim for priority under 35 U.S.C. .sctn. 119 is made to
Korean Patent Application No. 10-2018-0085561 filed on 23 Jul.
2018, in the Korean Intellectual Property Office, the entire
contents of which are hereby incorporated by reference.
BACKGROUND
[0002] Embodiments of the inventive concept described herein relate
to an apparatus and method for treating a substrate, and more
particularly, relate to an apparatus and method for treating a
substrate with a liquid dispensed onto the substrate and then
removing the liquid.
[0003] Semiconductor processes comprise a process of cleaning a
thin film, foreign matter, particles, or the like on a substrate.
The cleaning process is performed by placing the substrate on a
spin head such that a patterned surface is directed upward or
downward, dispensing a treating liquid onto the substrate while
rotating the spin head, and thereafter drying the substrate.
[0004] In recent years, a supercritical fluid has been used in a
process of cleaning a substrate. For example, a liquid treating
chamber for treating a substrate by dispensing a treating liquid
onto a substrate and a high-pressure chamber for removing the
treating liquid from the substrate by using a supercritical fluid
after the performance of the liquid treating are provided, and the
substrate completely treated in the liquid treating chamber is
transferred into the high-pressure chamber by a transfer robot.
[0005] FIG. 1 is a schematic view illustrating a substrate treating
apparatus for cleaning a substrate by using a supercritical fluid
in the related art. The supercritical fluid is stored in a fluid
supply tank 61 and is supplied by opening a valve. An orifice 63 is
provided in a supply line. The orifice 63 adjusts the supply of the
supercritical fluid. A heater 64 is provided downstream of the
orifice 63 to heat the supercritical fluid passing through the
orifice 63. The heated supercritical fluid is supplied into a
chamber 50. The supercritical fluid is adiabatically expanded after
passing through the orifice 63, and therefore an unintended phase
change may occur.
SUMMARY
[0006] Embodiments of the inventive concept provide a substrate
treating apparatus and method for improving process efficiency when
treating a substrate by using a supercritical fluid.
[0007] Furthermore, embodiments of the inventive concept provide a
substrate treating apparatus and method for reducing particles on a
substrate when treating the substrate by using a supercritical
fluid.
[0008] The technical problems to be solved by the inventive concept
are not limited to the aforementioned problems, and any other
technical problems not mentioned herein will be clearly understood
from the following description by those skilled in the art to which
the inventive concept pertains.
[0009] According to an exemplary embodiment, an apparatus for
treating a substrate comprises a chamber having a processing space
in which a process of treating the substrate is performed and a
fluid supply unit that supplies a treating fluid into the chamber.
The fluid supply unit comprises a supply line, at least one orifice
provided in the supply line, and a first heater provided on the
orifice or upstream of the orifice. The first heater heats the
treating fluid passing through the orifice to a set temperature or
more.
[0010] According to an embodiment, the treating fluid may be
adiabatically expanded downstream of the orifice, and the set
temperature may be a temperature that allows the temperature of the
treating fluid adiabatically expanded after passing through the
orifice to be maintained at a critical temperature or more.
[0011] According to an embodiment, the supply line may comprise an
orifice region in which the orifice is provided, a front orifice
region upstream of the orifice region, and a rear orifice region
downstream of the orifice region. The treating fluid may form at
least one turning point in a temperature-pressure phase diagram
while sequentially passing through the front orifice region, the
orifice region, and the rear orifice region. The turning point may
be formed at a temperature higher than a critical temperature of
the treating fluid.
[0012] According to an embodiment, the set temperature may be a
temperature that allows the treating fluid passing through the
orifice to change into a gaseous or supercritical state to
experience two-phase or less phase change.
[0013] According to an embodiment, the apparatus may further
comprise a second heater provided downstream of the orifice.
[0014] According to an embodiment, the treating fluid may be carbon
dioxide.
[0015] According to an exemplary embodiment, a method for treating
a substrate comprises performing a process of treating the
substrate by dispensing a supercritical fluid onto the substrate. A
treating fluid flows through an orifice before dispensed onto the
substrate. The treating fluid is heated to a set temperature or
more before passing through the orifice.
[0016] According to an embodiment, the temperature of the treating
fluid may be lowered downstream of the orifice, and the set
temperature may be a temperature that allows the lowered
temperature to be maintained at a critical temperature or more.
[0017] According to an embodiment, a supply line that supplies the
treating fluid may comprise an orifice region in which the orifice
is provided, a front orifice region upstream of the orifice region,
and a rear orifice region downstream of the orifice region. The
treating fluid may form at least one turning point in a
temperature-pressure phase diagram while sequentially passing
through the front orifice region, the orifice region, and the rear
orifice region. The turning point may be formed at a temperature
higher than a critical temperature of the treating fluid.
[0018] According to an embodiment, the process may be a process of
drying the substrate.
[0019] According to an embodiment, the treating fluid may be carbon
dioxide.
BRIEF DESCRIPTION OF THE FIGURES
[0020] The above and other objects and features will become
apparent from the following description with reference to the
following figures, wherein like reference numerals refer to like
parts throughout the various figures unless otherwise specified,
and wherein:
[0021] FIG. 1 is a schematic view illustrating a substrate treating
apparatus in the related art;
[0022] FIG. 2 is a schematic plan view illustrating a substrate
treating apparatus according to an embodiment of the inventive
concept;
[0023] FIG. 3 is a schematic view illustrating an embodiment of a
liquid treating chamber of FIG. 2;
[0024] FIG. 4 is a schematic view illustrating an embodiment of a
high-pressure chamber of FIG. 2;
[0025] FIG. 5 is a schematic view illustrating a substrate treating
apparatus according to an embodiment of the inventive concept;
[0026] FIG. 6 is an enlarged view illustrating an orifice region
and neighboring regions in FIG. 5;
[0027] FIG. 7 illustrates the phase diagram of carbon dioxide in
which a phase change process according to an example of the
inventive concept is represented;
[0028] FIG. 8 is a schematic view illustrating a substrate treating
apparatus according to another embodiment of the inventive concept;
and
[0029] FIG. 9 is a schematic view illustrating a substrate treating
apparatus according to another embodiment of the inventive
concept.
DETAILED DESCRIPTION
[0030] Hereinafter, embodiments of the inventive concept will be
described in more detail with reference to the accompanying
drawings. The inventive concept may, however, be embodied in
different forms and should not be constructed as limited to the
embodiments set forth herein. Rather, these embodiments are
provided so that the inventive concept will be thorough and
complete, and will fully convey the scope of the inventive concept
to those skilled in the art. In the drawings, the dimensions of
components are exaggerated for clarity of illustration.
[0031] FIG. 2 is a schematic plan view illustrating a substrate
treating apparatus according to an embodiment of the inventive
concept.
[0032] Referring to FIG. 2, the substrate treating apparatus
comprises an index module 10, a process module 20, and a controller
30. According to an embodiment, the index module 10 and the process
module 20 are arranged along one direction. Hereinafter, the
direction in which the index module 10 and the process module 20
are arranged is referred to as a first direction 92, a direction
perpendicular to the first direction 92 when viewed from above is
referred to as a second direction 94, and a direction perpendicular
to both the first direction 92 and the second direction 94 is
referred to as a third direction 96.
[0033] The index module 10 transfers substrates W from carriers 80
having the substrates W received therein to the process module 20
and places, in the carriers 80, the substrates W completely treated
in the process module 20. The lengthwise direction of the index
module 10 is parallel to the second direction 94. The index module
10 has a plurality of load ports 12 and an index frame 14. The load
ports 12 are located on the opposite side to the process module 20
with respect to the index frame 14. The carriers 80 having the
substrates W received therein are placed on the load ports 12. The
plurality of load ports 12 may be arranged along the second
direction 94.
[0034] Airtight carriers such as front open unified pods (FOUPs)
may be used as the carriers 80. The carriers 80 may be placed on
the load ports 12 by a transfer unit (not illustrated) such as an
overhead transfer, an overhead conveyor, or an automatic guided
vehicle, or by an operator.
[0035] An index robot 120 is provided in the index frame 14. A
guide rail 140, the lengthwise direction of which is parallel to
the second direction 94, is provided in the index frame 14 and the
index robot 120 is movable along the guide rail 140. The index
robot 120 comprises a hand 122 on which a substrate W is placed,
and the hand 122 is movable forward and backward, rotatable about
an axis oriented in the third direction 96, and movable along the
third direction 96. A plurality of hands 122 may be provided to be
spaced apart from each other in the vertical direction. The hands
122 may independently move forward or backward.
[0036] The process module 20 comprises a buffer unit 200, a
transfer chamber 300, liquid treating chambers 400, and
high-pressure chambers 500. The buffer unit 200 provides a space in
which substrates W to be loaded into the process module 20 and
substrates W unloaded from the process module 20 temporarily stay.
Each of the liquid treating chambers 400 performs a liquid treating
process of treating a substrate W by dispensing a liquid onto the
substrate W. Each of the high-pressure chambers 500 performs a
drying process of removing the liquid remaining on the substrate W.
The transfer chamber 300 transfers the substrate W between the
buffer unit 200, the liquid treating chamber 400, and the
high-pressure chamber 500.
[0037] The transfer chamber 300 may be arranged such that the
lengthwise direction thereof is parallel to the first direction 92.
The buffer unit 200 may be disposed between the index module 10 and
the transfer chamber 300. The liquid treating chambers 400 and the
high-pressure chambers 500 may be disposed on opposite sides of the
transfer chamber 300. The liquid treating chambers 400 and the
transfer chamber 300 may be arranged along the second direction 94.
The high-pressure chambers 500 and the transfer chamber 300 may be
arranged along the second direction 94. The buffer unit 200 may be
located at one end of the transfer chamber 300.
[0038] According to an embodiment, the liquid treating chambers 400
may be disposed on the opposite sides of the transfer chamber 300,
and the high-pressure chambers 500 may be disposed on the opposite
sides of the transfer chamber 300. The liquid treating chambers 400
may be disposed closer to the buffer unit 200 than the
high-pressure chambers 500. On one side of the transfer chamber
300, the liquid treating chambers 400 may be arranged in an
A.times.B array (A and B being natural numbers of 1 or larger)
along the first direction 92 and the third direction 96.
Furthermore, on the one side of the transfer chamber 300, the
high-pressure chambers 500 may be arranged in a C.times.D array (C
and D being natural numbers of 1 or larger) along the first
direction 92 and the third direction 96. Alternatively, the liquid
treating chambers 400 may be provided on only the one side of the
transfer chamber 300, and the high-pressure chambers 500 may be
provided on only the opposite side of the transfer chamber 300.
[0039] The transfer chamber 300 has a transfer robot 320. A guide
rail 340, the lengthwise direction of which is parallel to the
first direction 92, may be provided in the transfer chamber 300 and
the transfer robot 320 is movable along the guide rail 340. The
transfer robot 320 may comprise a hand 322 on which the substrate W
is placed. The hand 322 is movable forward and backward, rotatable
about an axis oriented in the third direction 96, and movable along
the third direction 96. A plurality of hands 322 may be provided to
be spaced apart from each other in the vertical direction. The
hands 322 may independently move forward or backward.
[0040] The buffer unit 200 comprises a plurality of buffers 220 in
which substrates W are placed. The buffers 220 may be spaced apart
from each other along the third direction 96. The front face and
the rear face of the buffer unit 200 are open. The front face is
opposite the index module 10, and the rear face is opposite the
transfer chamber 300. The index robot 120 may approach the buffer
unit 200 through the front face of the buffer unit 200, and the
transfer robot 320 may approach the buffer unit 200 through the
rear face of the buffer unit 200.
[0041] FIG. 3 is a schematic view illustrating an embodiment of the
liquid treating chambers 400 of FIG. 2. Referring to FIG. 3, the
liquid treating chamber 400 has a housing 410, a cup 420, a support
unit 440, a liquid dispensing unit 460, and a lifting unit 480. The
housing 410 has a substantially rectangular parallelepiped shape.
The cup 420, the support unit 440, and the liquid dispensing unit
460 are arranged in the housing 410.
[0042] The cup 420 has a processing space that is open at the top,
and a substrate W is treated with liquids in the processing space.
The support unit 440 supports the substrate W in the processing
space. The liquid dispensing unit 460 dispenses the liquids onto
the substrate W supported on the support unit 440. The liquids of
different types may be sequentially dispensed onto the substrate W.
The lifting unit 480 adjusts the height of the cup 420 relative to
the support unit 440.
[0043] According to an embodiment, the cup 420 has a plurality of
recovery bowls 422, 424, and 426. The recovery bowls 422, 424, and
426 have recovery spaces for recovering the liquids used to treat
the substrate W, respectively. Each of the recovery bowls 422, 424,
and 426 has a ring shape that surrounds the support unit 440. The
treating liquids scattered by rotation of the substrate W during
liquid treating processes may be introduced into the recovery
spaces through inlets 422a, 424a, and 426a of the respective
recovery bowls 422, 424, and 426. According to an embodiment, the
cup 420 has the first recovery bowl 422, the second recovery bowl
424, and the third recovery bowl 426. The first recovery bowl 422
is disposed to surround the support unit 440, the second recovery
bowl 424 is disposed to surround the first recovery bowl 422, and
the third recovery bowl 426 is disposed to surround the second
recovery bowl 424. The second inlet 424a through which a liquid is
introduced into the second recovery bowl 424 may be located in a
higher position than the first inlet 422a through which a liquid is
introduced into the first recovery bowl 422, and the third inlet
426a through which a liquid is introduced into the third recovery
bowl 426 may be located in a higher position than the second inlet
424a.
[0044] The support unit 440 has a support plate 442 and a driving
shaft 444. An upper surface of the support plate 442 may have a
substantially circular shape and may have a larger diameter than
the substrate W. Support pins 442a are provided on the central
portion of the support plate 442 to support the backside of the
substrate W. The support pins 442a protrude upward from the support
plate 442 to allow the substrate W to be spaced apart from the
support plate 442 by a predetermined distance. Chuck pins 442b are
provided on the edge portion of the support plate 442. The chuck
pins 442b protrude upward from the support plate 442 and support
the lateral portion of the substrate W to prevent the substrate W
from escaping from the support unit 440 when being rotated. The
driving shaft 444 is driven by an actuator 446. The driving shaft
444 is connected to the center of a bottom surface of the support
plate 442 and rotates the support plate 442 about the central axis
thereof.
[0045] According to an embodiment, the liquid dispensing unit 460
has a first nozzle 462, a second nozzle 464, and a third nozzle
466. The first nozzle 462 dispenses a first liquid onto the
substrate W. The first liquid may be a liquid for removing a film
or foreign matter remaining on the substrate W. The second nozzle
464 dispenses a second liquid onto the substrate W. The second
liquid may be a liquid for neutralizing the first liquid dispensed
onto the substrate W. Furthermore, the second liquid may be a
liquid that neutralizes the first liquid and dissolves better in a
third liquid than in the first liquid. The third nozzle 466
dispenses the third liquid onto the substrate W. The third liquid
may be a liquid that dissolves well in a supercritical fluid used
in the high-pressure chambers 500. For example, the third liquid
may be a liquid that dissolves better in the supercritical fluid
used in the high-pressure chambers 500 than in the second liquid.
The first nozzle 462, the second nozzle 464, and the third nozzle
466 may be supported by different arms 461. The arms 461 may be
independently moved. Alternatively, the first nozzle 462, the
second nozzle 464, and the third nozzle 466 may be mounted on the
same arm and may be simultaneously moved by the same arm.
[0046] The lifting unit 480 moves the cup 420 in the vertical
direction. The relative height between the cup 420 and the
substrate W is modified by the vertical movement of the cup 420.
Accordingly, the recovery bowls 422, 424, and 426 for recovering
the treating liquids may be changed depending on the types of
liquids dispensed onto the substrate W, thereby separately
recovering the liquids. In contrast to the above description, the
cup 420 may be fixed, and the lifting unit 480 may move the support
unit 440 in the vertical direction.
[0047] FIG. 4 is a schematic view illustrating an embodiment of the
high-pressure chambers 500 of FIG. 2. According to an embodiment,
the high-pressure chamber 500 removes a liquid on a substrate W by
using a supercritical fluid. The high-pressure chamber 500 has a
body 520, a substrate support unit (not illustrated), a fluid
supply unit 560, and a blocking plate (not illustrated).
[0048] The body 520 has an inner space 502 in which a dry process
is performed. The body 520 has an upper body 522 and a lower body
524. The upper body 522 and the lower body 524 are combined with
each other to form the aforementioned inner space 502. The upper
body 522 is located over the lower body 524. The upper body 522 may
be fixed in position, and the lower body 524 may be raised or
lowered by an actuator 590 such as a cylinder. When the lower body
524 is separated from the upper body 522, the inner space 502 is
opened, and the substrate W is placed in or extracted from the
inner space 502. During the drying process, the lower body 524 is
brought into close contact with the upper body 522 to seal the
inner space 502 from the outside. The high-pressure chamber 500 has
a heater 570. According to an embodiment, the heater 570 is located
in a wall of the body 520. The heater 570 heats the inner space 502
of the body 520 to allow the fluid supplied into the inner space
502 of the body 520 to be maintained in a supercritical state.
[0049] Meanwhile, although not illustrated in the drawing, the
substrate support unit (not illustrated) that supports the
substrate W may be provided in the processing space 502. The
substrate support unit (not illustrated) supports the substrate W
in the inner space 502 of the body 520. The substrate support unit
(not illustrated) may be installed on the lower body 524 to support
the substrate W. In this case, the substrate support unit (not
illustrated) may raise and support the substrate W. Alternatively,
the substrate support unit (not illustrated) may be installed on
the upper body 522 to support the substrate W. In this case, the
substrate W may be suspended from the substrate support unit (not
illustrated) and supported thereby.
[0050] The fluid supply unit 560 supplies a treating fluid into the
inner space 502 of the body 520. According to an embodiment, the
treating fluid in a supercritical state may be supplied into the
inner space 502. Alternatively, the treating fluid in a gaseous
state may be supplied into the inner space 502 and may experience a
phase change into a supercritical state in the inner space 502. The
treating fluid may be a fluid for drying.
[0051] According to an embodiment, the fluid supply unit 560 has a
supply line 562. The supply line 562 supplies the treating fluid
from above the substrate W placed on the substrate support unit
(not illustrated). According to an embodiment, the supply line 562
is connected to the upper body 522. In addition, the supply line
562 may be connected to the center of the upper body 522.
[0052] Alternatively, the supply line 562 may be split into an
upper branch line 564 connected to the upper body 522 and a lower
branch line (not illustrated). The lower branch line (not
illustrated) may be connected to the lower body 524. The upper
branch line 564 and the lower branch line (not illustrated) may
each have a flow valve installed therein.
[0053] An exhaust line 550 is connected to the lower body 524. The
supercritical fluid in the inner space 502 of the body 520 is
discharged outside the body 520 through the exhaust line 550.
[0054] In the case where the lower branch line (not illustrated) is
connected to the lower body 524, the blocking plate (not
illustrated) may be disposed in the inner space 502 of the body
520. The blocking plate (not illustrated) may have a circular plate
shape. The blocking plate (not illustrated) is supported by
supports (not illustrated) so as to be spaced apart upward from a
bottom surface of the body 520. The supports (not illustrated) have
a rod shape and are spaced apart from each other by a predetermined
distance. An outlet of the lower branch line (not illustrated) and
an inlet of the exhaust line 550 may be provided in positions that
do not interfere with each other. The blocking plate (not
illustrated) may prevent the treating fluid supplied through the
lower branch line (not illustrated) from being directly dispensed
toward the substrate W to damage the substrate W.
[0055] FIG. 5 is a schematic view illustrating a substrate treating
apparatus according to an embodiment of the inventive concept. The
fluid supply unit 560 will be described in detail with reference to
FIG. 5.
[0056] According to an embodiment, a fluid supply tank 610 is
provided upstream of the fluid supply unit 560. The fluid supply
tank 610 stores a treating fluid that is to be supplied into the
high-pressure chamber 500. According to an embodiment, the treating
fluid is carbon dioxide. The supply line 562 is connected to the
fluid supply tank 610. The supply line 562 provides a passage
through which the treating fluid stored in the fluid supply tank
610 is supplied into the high-pressure chamber 500.
[0057] According to an embodiment, the supply line 562 is equipped
with a flow valve 620, a first heater 630, an orifice 640, a second
heater 650, and a flow valve 660. According to an embodiment, the
flow valve 620, the first heater 630, the orifice 640, the second
heater 650, and the flow valve 660 are sequentially arranged from
an upstream side to a downstream side. The terms "upstream side"
and "downstream side" used herein are based on the flow direction
of the treating fluid in the supply line 562.
[0058] The flow valve 620 is a valve that opens or closes the
supply of the treating fluid from the fluid supply tank 610. In an
open state, the flow valve 620 allows the treating fluid to flow
through the supply line 562 downstream of the flow valve 620. In a
closed state, the flow valve 620 does not allow the treating fluid
to flow through the supply line 562 downstream of the flow valve
620. The treating fluid passing through the flow valve 620 is in a
high-temperature gaseous state or a supercritical state. A
plurality of flow valves 620 may be installed for each line to
control the supply of the treating fluid.
[0059] The orifice 640 regulates the amount of treating fluid
supplied from the fluid supply tank 610. The amount of treating
fluid passing through the orifice 640 is adjusted depending on the
size of orifice 640. The orifice 640 changes the cross-section of
the flow passage in the line. The cross-sectional area of the flow
passage in the orifice 640 is gradually decreased from the upstream
side to the downstream side. According to an embodiment, the flow
passage in the orifice 640 comprises a section having a decreasing
cross-sectional area from the upstream side to the downstream side,
a section having a constant cross-sectional area, and a section
having an increasing cross-sectional area from the upstream side to
the downstream side.
[0060] The first heater 630 is provided upstream of the orifice
640. The first heater 630 heats the treating fluid upstream of the
orifice 640 to a set temperature or more.
[0061] The second heater 650 is provided downstream of the orifice
640. The second heater 650 heats the treating fluid downstream of
the orifice 640 to the set temperature or more. According to an
embodiment, the second heater 650 is for maintaining the
temperature of the treating fluid.
[0062] FIG. 6 is an enlarged view illustrating an orifice region
and neighboring regions in FIG. 5, and FIG. 7 illustrates the phase
diagram of carbon dioxide in which a phase change process according
to an example of the inventive concept is represented.
[0063] Referring to FIGS. 6 and 7, a front orifice region {circle
around (1)} is provided upstream of the orifice region {circle
around (2)} in which the orifice 640 is provided, and a rear
orifice region {circle around (3)} is provided downstream of the
orifice region {circle around (2)}. The first heater 630 is
installed in the front orifice region, and the second heater 650 is
installed in the rear orifice region.
[0064] In FIG. 7, T.sub.cr is the temperature at the critical
point, T.sub.tp is the temperature at the triple point, P.sub.cr is
the pressure at the critical point, and P.sub.tr is the pressure at
the triple point. For example, in the case where the treating fluid
is carbon dioxide, T.sub.cr is 31.1.degree. C., T.sub.tp is
-56.4.degree. C., P.sub.cr is 73 atm, and P.sub.tr is 5.11 atm.
[0065] The treating fluid at T.sub.cr or more that passes through
the orifice 640 is adiabatically expanded downstream of the orifice
640. At this time, the temperature of the treating fluid sharply
drops along the direction A.fwdarw.B of FIG. 7. Thereafter, as the
second heater 650 heats the treating fluid, the temperature of the
treating fluid rises along the direction B.fwdarw.C.
[0066] In comparative example 1, a treating fluid in a gaseous
state at point A1 of a specific temperature (T.sub.cr or more) and
a specific pressure on the temperature-pressure phase diagram is
adiabatically expanded after passing through the orifice 640. At
this time, the temperature of the treating fluid drops along the
direction A1.fwdarw.B1. The treating fluid, the temperature of
which is lowered, exists in a solid state at turning point B1.
Thereafter, as the second heater 650 downstream of the orifice 640
heats the treating fluid, the treating fluid goes to a
supercritical fluid phase through a liquid phase along the
direction B1.fwdarw.C1. According to comparative example 1, the
treating fluid experiences the four-phase change in the process of
sequentially passing through points A1, B1, and C1 until the
treating fluid is supplied in the supercritical fluid state.
[0067] In comparative example 2, a treating fluid in a gaseous
state at point A2 of a specific temperature (T.sub.cr or more) and
a specific pressure (the temperature at point A2 being higher than
the temperature at point A1) on the temperature-pressure phase
diagram is adiabatically expanded after passing through the orifice
640. At this time, the temperature of the treating fluid drops
along the direction A2.fwdarw.B2. The treating fluid, the
temperature of which is lowered, exists in a liquid state at
turning point B2. Thereafter, as the second heater 650 downstream
of the orifice 640 heats the treating fluid, the treating fluid
goes to a supercritical fluid phase along the direction
B2.fwdarw.C2. According to comparative example 2, the treating
fluid experiences the three-phase change in the process of
sequentially passing through points A2, B2, and C2 until the
treating fluid is supplied in the supercritical fluid state.
[0068] In the example of the inventive concept, a treating fluid in
a gaseous state at point A3 of a specific temperature (T.sub.cr or
more) and a specific pressure (the temperature at point A3 being
higher than the temperature at point A2) on the
temperature-pressure phase diagram is adiabatically expanded after
passing through the orifice 640. At this time, the temperature of
the treating fluid drops along the direction A3.fwdarw.B3. The
treating fluid, the temperature of which is lowered, exists in a
gaseous or supercritical state at turning point B3. Thereafter, as
the second heater 650 downstream of the orifice 640 heats the
treating fluid, the treating fluid goes to a supercritical fluid
phase along the direction B3.fwdarw.C3. According to the example of
the inventive concept, the treating fluid experiences the two-phase
change in the process of sequentially passing through points A3,
B3, and C3 until the treating fluid is supplied in the
supercritical fluid state.
[0069] The treating fluid in comparative example 1 experiences the
four-phase change, and the treating fluid in comparative example 2
experiences the three-phase change. The phase changes of the
treating fluids cause a rise in the level of contamination in the
treating fluids. For example, when the treating fluid at point B1
in comparative example 1 is solid, the solid may strike the pipe of
the supply line 562 to cause contamination.
[0070] To minimize a phase change, a method of storing a
supercritical fluid in the fluid supply tank 610 and thereafter
supplying the supercritical fluid or a method of raising the
temperature of a treating fluid in the fluid supply tank 610 to the
maximum may be used. However, these methods may cause a decrease in
the capacity of a treating fluid that can be stored in the fluid
supply tank 610.
[0071] On the supply line 562 according to the embodiment, the
first heater 630 is provided upstream of the orifice 640 where
adiabatic expansion occurs. The first heater 630 heats the
supercritical fluid to the set temperature or more immediately
before the treating fluid passes through the orifice 640. The set
temperature is a range of temperature that allows the temperature
of the supercritical fluid expanded after passing through the
orifice 640 to be maintained at the critical temperature or
more.
[0072] The first heater 630 may not only previously raise the
temperature of the treating fluid, the temperature of which is
lowered after the passage of the treating fluid through the orifice
640, but may also increase the capacity of a treating fluid that
can be stored in the fluid supply tank 610.
[0073] FIG. 8 is a schematic view illustrating a substrate treating
apparatus according to another embodiment of the inventive concept.
Referring to FIG. 8, a first heater 670 may be provided on the
orifice 640. The first heater 670 heats the treating fluid to allow
the temperature of the treating fluid passing through the orifice
640 to be maintained at the critical temperature or more.
[0074] FIG. 9 is a schematic view illustrating a substrate treating
apparatus according to another embodiment of the inventive concept.
Referring to FIG. 9, the embodiment illustrated in FIG. 5 and the
embodiment illustrated in FIG. 8 may be merged together. A
plurality of first heaters may be provided. The first heater 630
may be provided upstream of the orifice 640, and the first heater
670 may be provided on the orifice 640.
[0075] The inventive concept may be applied not only to a process
of drying a substrate by using a supercritical fluid but also to a
process of treating a substrate by using a supercritical fluid, and
this corresponds to a modification of an ordinary creativity
range.
[0076] According to the embodiments of the inventive concept, the
substrate treating apparatus and method may improve process
efficiency when treating a substrate by using a supercritical
fluid.
[0077] Further, according to the embodiments of the inventive
concept, the substrate treating apparatus and method may reduce
particles on a substrate when treating the substrate by using a
supercritical fluid.
[0078] Effects of the inventive concept are not limited to the
above-described effects, and any other effects not mentioned herein
may be clearly understood from this specification and the
accompanying drawings by those skilled in the art to which the
inventive concept pertains.
[0079] While the inventive concept has been described with
reference to exemplary embodiments, it will be apparent to those
skilled in the art that various changes and modifications may be
made without departing from the spirit and scope of the inventive
concept. Therefore, it should be understood that the above
embodiments are not limiting, but illustrative.
* * * * *