U.S. patent application number 16/027347 was filed with the patent office on 2020-01-09 for resistive memory device for matrix-vector multiplications.
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Lukas Kull, Manuel Le Gallo-Bourdeau, Abu Sebastian.
Application Number | 20200013462 16/027347 |
Document ID | / |
Family ID | 69057728 |
Filed Date | 2020-01-09 |
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United States Patent
Application |
20200013462 |
Kind Code |
A1 |
Le Gallo-Bourdeau; Manuel ;
et al. |
January 9, 2020 |
RESISTIVE MEMORY DEVICE FOR MATRIX-VECTOR MULTIPLICATIONS
Abstract
A matrix-vector multiplication device includes a memory crossbar
array with row lines, column lines, and junctions. Each junction
comprises a programmable resistive element and an access element. A
signal generator is configured to apply programming signals to the
resistive elements to program conductance values for the
matrix-vector multiplication and a readout circuit is configured to
apply read voltages to the row lines and to read out current values
of the column lines. Control circuitry is configured to control the
signal generator and the readout circuit and to select, via the
access terminals, a plurality of resistive elements in parallel
according to a predefined selection scheme which applies the
signals and/or the read voltages in parallel to resistive elements
which do not share the same row and column line and applies the
programming signals and/or the read voltages to at most one
resistive element per row line and column line.
Inventors: |
Le Gallo-Bourdeau; Manuel;
(Zurich, CH) ; Sebastian; Abu; (Adliswil, CH)
; Kull; Lukas; (Thalwil, CH) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
69057728 |
Appl. No.: |
16/027347 |
Filed: |
July 4, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 2213/79 20130101;
G11C 13/0023 20130101; G11C 13/003 20130101; G11C 13/0061 20130101;
G11C 13/0004 20130101; G11C 13/0069 20130101; G11C 13/0028
20130101; G11C 2213/52 20130101; G11C 2213/53 20130101; G11C
2213/73 20130101; G11C 2213/76 20130101; G11C 13/0026 20130101;
G11C 2213/74 20130101; G11C 11/54 20130101; G11C 13/004 20130101;
G11C 2213/15 20130101 |
International
Class: |
G11C 13/00 20060101
G11C013/00 |
Claims
1. A memcomputing device for performing a matrix-vector
multiplication of a matrix with a vector, the device comprising: a
memory crossbar array comprising a plurality of row lines; a
plurality of column lines; a plurality of junctions arranged
between the plurality of row lines and the plurality of column
lines, wherein each junction comprises a programmable resistive
element and an access element comprising an access terminal for
accessing the programmable resistive element; a signal generator
configured to apply programming signals to the resistive elements
to program conductance values representing respective elements of
the matrix to be multiplied with the vector; a readout circuit
configured to apply read voltages to the row lines of the memory
crossbar array wherein the read voltages represent respective
elements of the vector to be multiplied with the matrix; read out
current values of the column lines of the memory crossbar array,
wherein the current values represent respective elements of a
product of the matrix-vector multiplication; and control circuitry
configured to control the signal generator and the readout circuit
and to select by means of the access terminals a plurality of
resistive elements in parallel according to a predefined selection
scheme, wherein the predefined selection scheme is configured to
apply the programming signals and/or the read voltages in parallel
to a plurality of resistive elements which do not share the same
row line nor the same column line; and apply the programming
signals and/or the read voltages to at most one resistive element
per row line and at most one resistive element per column line.
2. The device according to claim 1, wherein the device comprises
access circuitry configured to apply in parallel a selection signal
to a subset of the access terminals to select in parallel a subset
of the resistive elements according to the predefined selection
scheme.
3. The device according to claim 1, wherein the junctions comprise
a serial arrangement of a resistive element and an access
transistor comprising a gate as access terminal.
4. The device according to claim 1, wherein the resistive element
is embodied as projected memory, the projected memory comprising an
integrated access terminal.
5. The device according to claim 1, wherein the selection scheme is
configured to select in parallel resistive elements of one or more
diagonals of the memory crossbar array.
6. The device according to claim 5, wherein the device comprises a
plurality of diagonal access lines, wherein each of the plurality
of diagonal access lines is coupled to the access terminals of an
array of diagonally arranged resistive elements.
7. The device according to claim 1, wherein the device comprises a
plurality of column access lines, the column access lines being
arranged along the column lines of the memory crossbar array,
wherein each of the plurality of column access lines is coupled to
the access terminals of an array of resistive elements being
arranged in a column line.
8. The device according to claim 7, wherein the selection scheme is
configured to apply programming signals and/or read voltages only
to access terminals of row lines which do not share the same column
access lines.
9. The device according to claim 1, wherein the junctions comprise
a serial arrangement of a resistive element and an access
transistor comprising a gate as access terminal, and wherein the
device comprises a plurality of memory blocks, and wherein an
output of each memory block is coupled to at least one access
transistor.
10. The device according to claim 9, wherein the memory blocks are
embodied as flip-flops.
11. The device according to claim 9, wherein the memory blocks are
arranged in rows of memory blocks, wherein each row of memory
blocks is configured as shift register.
12. The device according to claim 1, wherein an element of the
vector is represented as a duration of a read voltage pulse and/or
a voltage level of a read voltage pulse.
13. The device according to claim 1, wherein the device is
configured to perform multiple runs for the matrix-vector
multiplication; and to perform an averaging of result values of the
multiple runs.
14. The device as claimed in claim 1, wherein the resistive
elements are one of Phase change memory (PCM) elements, Conductive
bridge resistive memory elements, Metal-oxide resistive random
access memory (RRAM) elements, Magneto-resistive random access
memory (MRAM) elements, Ferroelectric random access memory (FeRAM)
elements, optical memory elements, and a system device, comprising
transistors, resistors, capacitors, and/or inductors, jointly
emulating a behavior of a resistive memory element.
15. The device according to claim 1, wherein the signal generator
is configured to program the conductance values of the resistive
elements by an iterative program and verify procedure.
16. A design structure tangibly embodied in a machine readable
medium for designing, manufacturing, or testing an integrated
circuit, the design structure comprising: a memcomputing device for
performing a matrix-vector multiplication of a matrix with a
vector, the device comprising: a memory crossbar array comprising a
plurality of row lines; a plurality of column lines; a plurality of
junctions arranged between the plurality of row lines and the
plurality of column lines, wherein each junction comprises a
programmable resistive element and an access element comprising an
access terminal for accessing the programmable resistive element; a
signal generator configured to apply programming signals to the
resistive elements to program conductance values representing
respective elements of the matrix to be multiplied with the vector;
a readout circuit configured to apply read voltages to the row
lines of the memory crossbar array, wherein the read voltages
represent respective elements of the vector to be multiplied with
the matrix; read out current values of column lines of the memory
crossbar array, wherein the current values represent respective
elements of a product of the matrix-vector multiplication; and
control circuitry configured to control the signal generator and
the readout circuit and to select by means of the access terminals
a plurality of resistive elements in parallel according to a
predefined selection scheme, wherein the predefined selection
scheme is configured to apply the programming signals and/or the
read voltages in parallel to a plurality of resistive elements
which do not share the same row line nor the same column line; and
apply the programming signals and/or the read voltages to at most
one resistive element per row line and at most one resistive
element per column line.
17. The design structure according to claim 16, wherein the
junctions comprise a serial arrangement of a resistive element and
an access transistor comprising a gate as access terminal.
18. The design structure according to claim 16, wherein the
resistive element is embodied as projected memory, the projected
memory comprising an integrated access terminal.
19. The design structure according to claim 16, wherein the
selection scheme is configured to select in parallel resistive
elements of one or more diagonals of the memory crossbar array,
wherein the device comprises a plurality of diagonal access lines,
wherein each of the plurality of diagonal access lines is coupled
to the access terminals of an array of diagonally arranged
resistive elements.
20. The design structure according to claim 16, wherein the
junctions comprise a serial arrangement of a resistive element and
an access transistor comprising a gate as access terminal, and
wherein the device comprises a plurality of memory blocks, wherein
an output of each memory block is coupled to at least one access
transistor.
Description
BACKGROUND
[0001] Cognitive computing is a promising technology for deriving
intelligence and knowledge from huge volumes of data. Today's
cognitive computers are usually based on the Von Neumann
architecture in which the computing and the memory units are
separated. Cognitive computing is inherently data-centric, meaning
that huge amounts of data need to be shuttled back and forth at
high speeds. As the Von Neumann architecture is rather inefficient
for such a task, it is becoming increasingly clear that other
architectures are desired to build efficient cognitive computers,
in particular architectures where memory and logic coexist in some
form.
[0002] Memcomputing is a key non-Von Neumann approach being
researched. A key element in this novel computing paradigm is a
high-density, low-power, variable state, programmable and
non-volatile memory device.
[0003] A fundamental computational primitive is a matrix-vector
multiplication. This primitive is of particular interest as it
forms the basis of several linear algebraic operations and it is
one of the most commonly used mathematical operations in science
and engineering. A matrix is usually represented by a
two-dimensional array of matrix elements and a vector by a
one-dimensional array of vector elements. A matrix may be
considered as array of vectors. Hence a matrix-vector
multiplication can be generalized to a matrix-matrix multiplication
and to a vector-vector multiplication.
[0004] However, many challenges remain to be solved in order to
perform accurate matrix-vector computations in an array of memory
devices in an efficient way.
[0005] Accordingly, there is a need for new and improved
memcomputing devices, in particular for memcomputing devices that
can perform matrix-vector multiplications.
SUMMARY
[0006] According to a first aspect, the invention is embodied as
device for performing a matrix-vector multiplication of a matrix
with a vector. The device comprises a memory crossbar array
comprising a plurality of row lines, a plurality of column lines
and a plurality of junctions arranged between the plurality of row
lines and the plurality of column lines. Each junction comprises a
programmable resistive element and an access element comprising an
access terminal for accessing the programmable resistive element.
The device further comprises a signal generator configured to apply
programming signals to the resistive elements to program
conductance values for the matrix-vector multiplication and a
readout circuit configured to apply read voltages to the row lines
of the memory crossbar array and to read out current values of
column lines of the memory crossbar array. The device further
comprises control circuitry configured to control the signal
generator and the readout circuit and to select by means of the
access terminals a plurality of resistive elements in parallel
according to a predefined selection scheme. The predefined
selection scheme is configured to apply the programming signals
and/or the read voltages in parallel to a plurality of resistive
elements which do not share the same row line nor the same column
line and to apply the programming signals and/or the read voltages
to at most one resistive element per row line and at most one
resistive element per column line.
[0007] According to another aspect a design structure is provided.
The design structure is tangibly embodied in a machine readable
medium for designing, manufacturing, or testing an integrated
circuit. The design structure comprises a device according to the
first aspect.
[0008] Embodiments of the invention will be described in more
detail below, by way of illustrative and non-limiting examples,
with reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 is a simplified schematic block diagram of a device
for performing a multiplication of a matrix with a vector according
to an embodiment of the invention;
[0010] FIG. 2 illustrates an example of matrix-vector
multiplication according to an embodiment of the invention;
[0011] FIG. 3 illustrates an exemplary embodiment of a scalar
multiplication to be performed by a phase change memory cell;
[0012] FIG. 4 is a schematic illustration of the current/voltage
characteristics of the material components of the phase change
memory cell of FIG. 3;
[0013] FIG. 5 shows a schematic illustration of a selection scheme
for performing read operations by a memory crossbar array;
[0014] FIG. 6 shows another schematic illustration of a selection
scheme for performing read operations by a memory crossbar
array;
[0015] FIG. 7 shows a schematic illustration of a selection scheme
for performing write operations by a memory crossbar array;
[0016] FIG. 8 shows a memory crossbar array which comprises a
plurality of memory blocks;
[0017] FIG. 9 shows a schematic illustration of a selection scheme
for performing read operations by a memory crossbar array;
[0018] FIG. 10 shows a schematic illustration of a selection scheme
for performing write operations by a memory crossbar array;
[0019] FIG. 11 shows a more detailed embodiment of a crossbar array
that may be used to implement a diagonal selection scheme;
[0020] FIG. 12 illustrates the computation of a matrix vector
multiplication performed by the memory crossbar array of FIG.
11;
[0021] FIG. 13 illustrates a matrix programming;
[0022] FIG. 14 illustrates a read operation of an iterative
programming scheme;
[0023] FIG. 15 shows another embodiment of a memory crossbar
array;
[0024] FIG. 16 illustrates a matrix programming of the memory
crossbar array of FIG. 15;
[0025] FIG. 17 shows a schematic cross-sectional view of resistive
memory element which is embodied as projected memory element;
and
[0026] FIG. 18 shows a block diagram of an exemplary design
flow.
DETAILED DESCRIPTION
[0027] In reference to FIGS. 1-18, some general aspects and terms
of embodiments of the invention are described.
[0028] According to embodiments of the invention, a resistive
element may be defined as an element whose electrical resistance
can be changed by applying an electrical programming signal to the
resistive element. The resistive element may be in particular
embodied as resistive memory element. The electrical programming
signal may be e.g. a current flowing through the resistive memory
element, or an electrical voltage applied to the resistive memory
element. The current and/or voltage may be e.g. applied to the
resistive memory element in the form of pulses. As a result, the
electrical resistance of a resistive memory element depends on the
history of current that had previously flown through the memory
element and/or the history of the electric signal that had been
applied to the resistive memory element.
[0029] Resistive memory elements are based on a physical phenomenon
occurring in a material that changes its resistance under action of
a current or electric field. The change is usually non-volatile and
reversible. Several classes of resistive memory elements are known,
ranging from metal oxides to chalcogenides. Typical resistive
memory elements are metal/insulator/metal structures where the
metallic components serve as the electrodes and the insulator is a
resistive switching material, e.g. a chalcogenide. These resistive
memory elements exhibit good performance in terms of power
consumption, integration density potential, retention, and
endurance.
[0030] Embodiments of the invention provide a way to do inexact
fast matrix multiplications. The result from this multiplication
may preferably be used in algorithms that do not require high
precision for multiplication tasks. Such an algorithm that could be
used for the post-processing of the results of the multiplication
according to embodiments of the invention is e.g. the algorithm
disclosed by Klavik et al. in "Changing Computing Paradigms Towards
Power Efficiency", Proc. Royal Society A., 2014. The multiplication
performed according to embodiments of the invention can be fast,
low-power and may be scalable to matrix sizes of 10000.times.10000
and beyond.
[0031] Furthermore, embodiments of the invention provide devices
that can perform matrix-vector multiplications with reduced
complexity.
[0032] Embodiments of the invention may bring significant power
and/or speed advantages compared to the conventional Von-Neumann
approach where the data has to be shuttled back and forth between a
central processing unit (CPU) and the memory.
[0033] As a matrix-vector multiplication can be generalized to a
matrix-matrix multiplication and to a vector-vector multiplication,
the device and the methods according to embodiments of the
invention can also be used to perform matrix-matrix multiplications
and vector-vector multiplications.
[0034] FIG. 1 is a simplified schematic block diagram of a device
100 for performing a multiplication of a matrix with a vector. The
device 100 comprises a resistive memory 10 having a plurality of
resistive memory elements. Furthermore, a signal generator 11 is
provided. The signal generator 11 is configured to apply electrical
programming signals to the resistive memory elements of the
resistive memory 10. The signal generator 11 comprises circuitry
for programming the resistive memory cells during data write or
programming operations such that a multiplication of a matrix with
a vector can be performed. The row lines and column lines may also
be denoted as word and bit lines. The signal generator 11 is
configured to receive a matrix A as input and to apply programming
signals to the resistive memory elements to program conductance
values of the resistive memory elements for a matrix-vector
multiplication.
[0035] The conductance values represent matrix values of the matrix
that shall be multiplied with the vector.
[0036] In addition, the device 100 comprises a readout circuit 12
configured to read out resistance values of the resistive memory
elements during data read operations. The device 100 is configured
to apply read out voltages to the rows of the memory crossbar
array. The read out voltages represent vector elements of the
vector that shall be multiplied with the matrix. The device is
further configured to read out current values of columns of the
memory array. The current values represent result values of vector
elements of a result vector of the multiplication.
[0037] The device 100 further comprises control circuitry 13
configured to control the signal generator 11 and the readout
circuit 12. The control circuitry 13 is in particular configured to
select in parallel a plurality of resistive elements of the
resistive memory 10 according to a predefined selection scheme. The
predefined selection scheme is configured to apply the programming
signals and/or the read voltages in parallel to a plurality of
resistive elements which do not share the same row line nor the
same column line. Furthermore, according to the predefined
selection scheme the programming signals and/or the read voltages
are applied to at most one resistive element per row line and at
most one resistive element per column line.
[0038] The memory 10 may be generally any kind of resistive memory
as described above. In particular it may be a phase change memory
(PCM) or a resistive random access memory (RRAM). In the following
it assumed that the resistive memory 10 is embodied as PCM.
Accordingly the resistive memory 10 comprise a plurality of PCM
cells as resistive memory elements. The PCM cells of memory 10 may
comprise s=2 or s>2 programmable resistance states, the latter
providing multilevel operation. The s programmable
resistance-states correspond to different relative proportions of
the amorphous and crystalline phases within the PCM material of the
cell. These states may include a high-resistance, fully-amorphous
RESET state, a low-resistance, fully-crystalline SET state, and a
number of intermediate states corresponding to increasing size of
the crystalline phase within the otherwise amorphous PCM material.
The s programmable cell-states are typically defined in terms of
predetermined reference values, or ranges of values, of the
resistance metric used for read detection by the readout circuit
12.
[0039] To perform a matrix-vector multiplication, the PCM cells are
programmed according to embodiments in a kind of write operation.
More particularly, the signal generator 11 applies a voltage to the
cell via the column lines and row lines such that the resulting
programming signal sets the cell to a state (conductance value)
that represents a matrix element of the matrix that shall be
multiplied with the vector. In a read operation, (lower) read
voltages are applied to the row lines. Then the resulting column
current values of the column lines are read/measured to obtain the
result vector
[0040] FIG. 2 illustrates an example of a matrix multiplication
according to an embodiment of the invention. The matrix
multiplication uses Ohm's law and Kirchhoff's law in a resistive
memory crossbar array.
[0041] According to the illustrated example, a matrix A of size
3.times.3 shall be multiplied with a vector x and the result is a
product or result vector b:
[ A 11 A 12 A 13 A 21 A 22 A 23 A 31 A 32 A 33 ] [ x 1 x 2 x 3 ] =
[ b 1 b 2 b 3 ] ##EQU00001##
[0042] Accordingly, the matrix A comprises a first column
consisting of the matrix elements A.sub.11, A.sub.21 and A.sub.31,
a second column consisting of the matrix elements A.sub.12,
A.sub.22 and A.sub.32 and a third column consisting of the matrix
elements A.sub.13, A.sub.23 and A.sub.33. The vector x comprises
the vector elements x.sub.1, x.sub.2 and x.sub.3.
[0043] For such a multiplication of the matrix A with the size
3.times.3, the resistive memory 10 comprises a memory crossbar
array 200 of a corresponding size 3.times.3.
[0044] The memory crossbar array 200 comprises 3 row lines 201, 202
and 203 and three column lines 204, 205 and 206. The three row
lines 201, 202 and 203 are arranged above the three column lines
204, 205 and 206 which is indicated by dotted lines. More
particularly, the row lines 201, 202 and 203 extend in a first
x-y-plane and the three column lines extend in a second x-y plane,
wherein the first x-y plane is arranged in the vertical z-direction
above the second x-y-plane.
[0045] The three row lines 201, 202 and 203 and the three column
lines 204, 205 and 206 are connected to each other via vertical
junctions 210. The junctions 210 extend in the vertical z-direction
between upper cross points 211a of the row lines 201-203 and lower
cross points 211b of the column lines 204-206.
[0046] Each junction 210 comprises a serial arrangement of a
resistive memory element and a transistor. For ease of
illustration, the transistors are not shown in FIG. 2.
[0047] More particularly, the crossbar array 200 comprises 9
resistive memory elements embodied as PCM cells. The column line
204 comprises resistive memory elements R.sub.11, R.sub.12 and
R.sub.13, the column line 205 comprises the memory elements
R.sub.21, R.sub.22 and R.sub.23 and the column line 206 the memory
elements R.sub.31, R.sub.32 and R.sub.33.
[0048] In order to perform the matrix vector multiplication of the
above matrix, the signal generator 11 applies programming signals,
in particular current pulses, to the resistive memory elements and
thereby programs the conductance values for the matrix-vector
multiplication.
[0049] More particularly, the conductance values of the resistive
memory elements represent matrix values of the matrix of the
matrix-vector multiplication. Accordingly, the conductance of the
resistive memory element R.sub.11 is programmed to the matrix value
A.sub.11, the conductance of the resistive memory element R.sub.12
is programmed to the matrix value A.sub.12, or more generally the
conductance of the resistive memory Rij is programmed to a
corresponding matrix value Aij.
[0050] Then the readout circuit 12 applies read voltages to the row
lines 201, 202 and 203. More particularly, the readout circuit 12
applies a read voltage X.sub.1 to the row line 201, a read voltage
X.sub.2 to the row line 202 and a read voltage X.sub.3 to the row
line 203. Hence the read voltages represent vector values of the
vector of the matrix-vector multiplication.
[0051] Furthermore, the readout circuit 12 reads out current values
of the column lines 204, 205 and 206. As an example, the readout
circuit 12 reads out a current value b.sub.1 from the column line
204, which is the sum of three multiplications, namely
b.sub.1=A.sub.11X.sub.1+A.sub.12X.sub.2+A.sub.13 x.sub.3.
[0052] Accordingly, the readout circuit 12 reads out a current
value b.sub.2 from the column line 205 and a current value b.sub.3
from the column line 206. The current values represent the result
values of the vector elements of the product vector b.
[0053] FIG. 3 illustrates an exemplary embodiment of a scalar
multiplication that may be performed by a PCM cell 300. Such a
scalar multiplication forms the basis of the matrix-vector
multiplication performed according to embodiments of the invention.
Let,
.theta..sub.n=.beta..sub.n.gamma..sub.n
where .beta..sub.n and .gamma..sub.n are numbers generated
uniformly in [0,1] . .beta..sub.n is mapped to an effective
conductance G.sub.n and .gamma..sub.n to a voltage V.sub.n. As the
current in the PCM cell 300 is a slightly non-linear function of
the voltage, the analogue scalar multiplication may be expressed to
follow a "pseudo" OHM's law, namely by
I.sub.n.apprxeq..alpha.G.sub.nf(V.sub.n).
[0054] In this equation, .alpha. is a time dependent conductance
variation parameter and f a function, in particular a polynomial
function that approximates the current-voltage characteristics of
the PCM cell 300. The PCM cell 300 may be programmed to the
effective conductance G.sub.n by an iterative program and verify
procedure. Then the readout circuit 12 may apply a read voltage
V.sub.n and readout the current I.sub.n. Finally, the current
I.sub.n is converted back to approximate the value {circumflex over
(.theta.)}.sub.n, representing the result of the scalar
multiplication.
[0055] According to preferred embodiments, an averaging of the
result over K memory elements/PCM cells is performed.
[0056] FIG. 4 is a schematic illustration of the current/voltage
(and hence resistance) characteristics of the material components
of the memory cell 300 of FIG. 3. The solid lines indicate
variation of current with voltage for the PCM material, starting
from the fully-crystalline SET state (upper curve) and also the
fully-amorphous RESET state (lower curve). These two curves reflect
the large (typically 3 orders of magnitude) variation in
resistivity between the crystalline and amorphous phases. The
amorphous phase exhibits a non-linear characteristic with a
threshold switching phenomenon that is field induced. At a certain
threshold voltage V.sub.TH, this phase switches to a very low
"ON-state" resistance corresponding to that of the crystalline PCM
material. The cell programming (write) voltage is selected to be
above this threshold voltage as indicated.
[0057] As can be seen in FIG. 4, the current in the read mode is a
slightly non-linear function of the voltage.
[0058] FIG. 5 shows a schematic illustration of a selection scheme
for performing read operations by a memory crossbar array 500. The
memory crossbar array comprises a plurality of row lines RL, a
plurality of columns lines CL and a plurality of junctions 30
comprising a serial arrangement of a resistive element R and a
transistor. For ease of illustration, the transistors are not shown
in FIG. 5. The applied selection scheme may be e.g. performed by
the control circuitry 13 of FIG. 1. The read circuit 12, under
control of the control circuitry 13, applies to each row line RL a
read voltage VR in the form of read pulses. The information of the
read pulses is in this example encoded by the height of the read
pulses. The array 500 comprises means to select multiple resistive
memory elements in parallel that do not share the same rows nor the
same columns. In this example only the 4 resistive elements which
are illustrated in black are selected by the control circuitry 13
for the read operations. The selected resistive elements are
denoted as RS and in addition marked with an arrow. As a result,
the read voltages VR are applied in parallel to the resistive
elements RS which do not share the same row line nor the same
column line and the resistive elements RS can be read individually
in parallel in a single step by integrating units 40.
[0059] FIG. 6 shows a schematic illustration of a selection scheme
for performing read operations by a memory crossbar array 600. The
memory crossbar array 600 corresponds to the memory crossbar array
500 of FIG. 5. Again the read circuit 12, under control of the
control circuitry 13, applies to each row line RL a read voltage VR
in the form of read pulses. According to this embodiment the
information of the read pulses is encoded by the duration of the
read pulses. The read voltages VR of different length are applied
in parallel to the 4 selected resistive elements RS, again
illustrated in black and marked with an arrow, which do not share
the same row line nor the same column line. Accordingly, the
selected resistive elements RS can be read individually in parallel
in a single step by the integrating units 40.
[0060] FIG. 7 shows a schematic illustration of a selection scheme
for performing write operations by a memory crossbar array 700. The
memory crossbar array 700 corresponds to the memory crossbar array
500 of FIG. 5. The signal generator 11 applies, under control of
the control circuitry 13, to each row line RL a programming signal,
in particular a write voltage VW in the form of write pulses. The
information to be written by the write voltages VW is encoded in
the amplitude of the write pulses. The write voltages VW of
different amplitude are applied in parallel to 4 selected resistive
elements RS, again illustrated in black and marked with an arrow,
which do not share the same row line nor the same column line. The
write operation may be performed by single shot programming or
iterative programming. During single shot programming, a resulting
write current CW along a column is only applied to the
corresponding selected resistive element RS. During iterative
programing, a sequence of write voltages VW with varying amplitude
and read voltages VR for verifying the programmed resistance can be
applied individually to the selected devices RS.
[0061] FIG. 8 shows a memory crossbar array 800 which comprises a
plurality of memory blocks 810. The memory crossbar array 800
comprises a plurality of row lines RL, a plurality of columns lines
CL and a plurality of junctions 30 comprising a serial arrangement
of a resistive memory element R and an access transistor M, which
may be in particular embodied as MOSFET. The memory blocks 810 are
embodied as flip-flops, in particular D-flip flops and are hence
also denoted with DFF. The memory blocks 810 are arranged in rows
of memory blocks. In the illustrated example a row 811 and a row
812 of memory blocks 810 is provided. Each of the rows 811, 812 of
memory blocks 810 is configured as shift register. Each memory
block 810 is allocated to a corresponding junction 30 and an output
815 of each memory block 810 is coupled to the gate of the
corresponding access transistor M of the corresponding junction 30.
The memory blocks 810 of each row 811 are clocked with a shared
clock signal ck. Furthermore, a control data signal d1 is applied
to the row 811 of memory blocks and a control data signal d2 to the
row 812. The control data of the control data signals d1, d2 can be
programmed in such a way that a desired selection scheme of the
resistive memory elements is achieved. More particularly, the
output of each memory block 810 is connected to the data input of
the next memory block in the chain, e.g. the respective row 811 or
812. As a result, the shift registers shifts the respective control
data input (d1, d2) by one position at each transition of the clock
signal ck. Such an approach provides the particular advantage of a
reduction of the wiring area.
[0062] According to embodiments, the shift register is
programmed/controlled in such a way by the control data that a
diagonal selection scheme is achieved. Such a diagonal selection
scheme can be efficiently programmed. More particularly, after a
first diagonal selection line has been programmed, each further
clock cycle shifts the diagonal selection line by one. As a simple
example, in case of a matrix with a first, a second and a third row
line, a control data input 100 for a first shift register allocated
to the first row line, a control data input 010 for a second shift
register allocated to the second line and a control data input 001
for a third shift register allocated to the third row line
implements a diagonal selection of the corresponding resistive
elements that is shifted by one resistive element to the right per
clock cycle.
[0063] The output signals of the memory blocks 810 which are
coupled to the gate of the corresponding access transistor M enable
or disable the corresponding resistive memory element prior to
programming and reading the resistive memory element. According to
embodiments (not shown) the memory blocks may be connected to
multiple access transistors of multiple resistive memory
elements.
[0064] FIG. 9 shows a schematic illustration of a selection scheme
for performing read operations by a memory crossbar array 900. The
memory crossbar array 900 comprises a plurality of row lines RL, a
plurality of columns lines CL and a plurality of junctions 30
comprising a serial arrangement of a resistive memory element R and
a transistor. For ease of illustration, the transistors are not
shown in FIG. 9. The applied selection scheme may be e.g. performed
by the control circuitry 13 of FIG. 1. The read circuit 12, under
control of the control circuitry 13, applies to each row line RL a
read voltage VR in the form of read pulses. The information of the
read pulses is in this example encoded by the height of the read
pulses. The array 900 comprises means to select multiple resistive
memory elements in parallel that do not share the same rows nor the
same columns. According to this embodiment 4 resistive elements RS
of a diagonal 910 of the memory crossbar array 900 are selected.
The selected resistive elements are illustrated in black and in
addition marked with an arrow. The read voltages VR are applied in
parallel to the selected resistive elements RS of the diagonal 910
and can be read individually in parallel in a single step by
integrating units 40.
[0065] FIG. 10 shows a schematic illustration of a selection scheme
for performing write operations by a memory crossbar array 1000.
The memory crossbar array 1000 corresponds to the memory crossbar
array 900 of FIG. 9. The signal generator 11 applies, under control
of the control circuitry 13, to each row line RL a programming
signal, in particular a write voltage VW in the form of write
pulses. The information to be written by the write pulses is
encoded in the amplitude of the write pulses. The write voltages VW
of different amplitudes are applied in parallel to 4 selected
resistive elements RS of a selected diagonal 1010. The write
operation may be performed by single shot programming or iterative
programming.
[0066] FIG. 11 shows a more detailed embodiment of a crossbar array
1100 that may be used to implement the diagonal selection scheme as
illustrated with reference to FIGS. 9 and 10.
[0067] The memory crossbar array 1100 comprises a plurality of row
lines RL, a plurality of columns lines CL and a plurality of
junctions 30. Each of the junctions 30 comprise a serial
arrangement of a resistive memory element R and an access
transistor M, which may be in particular embodied as MOSFET.
[0068] The memory crossbar array 1100 comprises as access circuitry
a plurality of diagonal access lines 1110, wherein each of the
plurality of diagonal access lines 1110 is coupled to a respective
array 1120 of diagonally arranged resistive memory elements R. More
particularly, each diagonal access line is coupled to the gates of
the access transistors M of the corresponding diagonal array 1120
of resistive memory elements R. Hence by providing an appropriate
control signal to one or more of the access lines 1110, all the
resistive memory elements R that are coupled to the respective
access line 1110 can be simultaneously turned on or off. In FIG. 11
only two arrays 1120 are explicitly indicated for ease of
illustration.
[0069] FIG. 12 illustrates the computation of a matrix vector
multiplication performed by the memory crossbar array 1100 of FIG.
11.
[0070] For the matrix-vector multiplication, all access lines 1110
have been selected. This can be implemented by sending by the
control circuitry 13 selection signals S to all access lines 1110.
The matrix vector multiplication can then be performed with O(1)
complexity.
[0071] The input of the computation, in this example the vector
values of the vector of the matrix-vector multiplication may be
encoded as amplitude of the voltage pulses applied to the row lines
or as time duration of the voltage pulses. In the example
illustrated in FIG. 12, the amplitude of the voltage pulses is
used.
[0072] The result of the computation is obtained by measuring the
current or an integral of the current over a fixed time duration by
the integrating units 40.
[0073] FIG. 13 illustrates a matrix programming of the memory
crossbar array 1100 of FIG. 11.
[0074] For the matrix-programming, the control circuitry 13 may
apply a selection scheme according to which only diagonal arrays
1320 and 1321 have been selected. This can be done by sending
selection signals S to only the access lines 1310 and 1311.
[0075] As a result, the 4 selected resistive elements RS can be
programmed in parallel. And in general, for a N.times.M matrix with
N columns and M rows, such a selection scheme may speed up the
programming by a factor of M compared with programming schemes that
program one individual cell after the other. As an example, for
N=M=1000, the programming scheme according to embodiments of the
invention will speed up the programming process by a factor of
1000.
[0076] The signal generator 11 may apply, under control of the
control circuitry 13, to each row line RL a programming signal, in
particular a write voltage VW in the form of write pulses.
According to the example of FIG. 13, the information to be written
by the write pulses is encoded in the amplitude of the write
pulses. The write operation as illustrated in FIG. 13 may be
performed by single shot programming or iterative programming. A
single-shot programming may be performed with O(N) time
complexity.
[0077] In iterative programming, in a first step a write operation
as illustrated in FIG. 13 is performed. Then in a next step the
result of the write operation is verified by a read operation.
[0078] FIG. 14 illustrates such a read operation of an iterative
programming scheme for the memory crossbar array 1100 of FIG. 11.
For the read operation, the control circuitry 13 applies a
selection scheme according to which only diagonal arrays 1420 and
1421 have been selected. This can be done by sending selection
signals S to only the corresponding access lines 1410 and 1411. As
a result, the 4 selected resistive elements RS can be read in
parallel.
[0079] This iterative process can be repeated as desired or needed
until the desired resistance value has been reached for the
selected resistive elements RS.
[0080] One iteration can be performed with O(2N) complexity
compared to O(M(N+1)) complexity of prior art schemes that perform
the iterative programming individually in a serial manner for
single resistive elements.
[0081] According to other embodiments of the invention the
iterative programming may also be performed with a variable read
voltage which may use e.g. the voltage dependence of the
conductance of the resistive memory elements.
[0082] FIG. 15 shows another embodiment of a memory crossbar array
1500. The memory crossbar array 1500 comprises a plurality of row
lines RL, a plurality of columns lines CL and a plurality of
junctions 30. Each of the junctions 30 comprise a serial
arrangement of a resistive memory element R and an access
transistor M, which may be in particular embodied as MOSFET. The
memory crossbar array 1500 comprises as access circuitry a
plurality of column access lines 1510 being arranged along the
column lines CL of the memory crossbar array 1500. Each of the
plurality of column access lines 1510 is coupled to a corresponding
vertical array 1520 of resistive memory elements being arranged in
a column line.
[0083] More particularly, each column access line 1510 is coupled
to the gates of the access transistors M of the corresponding array
1520 of resistive memory elements R. Hence by providing an
appropriate control signal to on one or more of the column access
lines 1510, all the resistive memory elements R that are coupled to
the respective column access line 1510 can be simultaneously turned
on or off.
[0084] FIG. 16 illustrates a matrix programming of the memory
crossbar array 1500 of FIG. 15.
[0085] For the matrix-programming, the control circuitry 13 may
apply a selection scheme according to which only vertical arrays
1620 and 1621 have been selected. This can be done by sending
selection signals S to only the column access lines 1610 and
1611.
[0086] According to such an embodiment write voltages VW are
applied only to rows which don't share the same column access
lines. Hence according to the example of FIG. 16 only 2 selected
resistive elements RS are programmed in parallel by the write
voltages VW.
[0087] The scheme with column access lines as illustrated with
reference to FIGS. 15 and 16 has a higher complexity to update all
resistive elements than schemes with diagonal access lines.
However, it offers more flexibility for resistive element selection
which may be useful e.g. when dealing with sparse matrix updates.
An iterative programming can be done in an analogous manner to the
diagonal selection schemes as explained above.
[0088] FIG. 17 shows a schematic cross-sectional view of resistive
memory element 1700 which is embodied as projected memory element.
The resistive memory element comprises an integrated access
terminal 1725. More particularly, the resistive memory element 1700
comprises a first segment 1721 comprising a PCM material such as a
chalcogenide as resistive memory material for storing information
in a plurality s of resistance states which correspond to the
programmable cell-states. The resistive memory element 1700 further
comprises a second segment 1722 comprising an electrically
non-insulating material. The first segment 1721 and the second
segment 1722 are arranged in parallel between a first terminal 1723
and a second terminal 1724. In parallel to and adjacent to the
second segment 1722 the integrated access terminal 1725 is provided
as third terminal. The first, the second and the third terminal may
be coupled to the control circuitry 13 of FIG. 1. The control
circuitry 13 is adapted to apply control signals to the first, the
second and the third terminal. More particularly, the control
circuitry 13 is configured to apply in a write mode a write voltage
to the first terminal 1723 and the second terminal 1724 for writing
one of the plurality of resistance states. Furthermore, the control
circuitry 13 is configured to apply in a read mode a read voltage
to the first terminal 1723 and the second terminal 1724, thereby
reading the respective resistance state. In addition, the control
circuitry 13 is configured to apply a control signal (selection
signal S) to the third terminal 1725 for adjusting the electrical
resistance of the second segment 1722. The electrical resistance of
the second segment 1722 can be independently controlled by the
control signals applied to the third terminal 1725. This allows to
adjust the current-voltage characteristic of the second segment
1722. Providing the second segment 1722 with a variable and tunable
resistance can be used to select or deselect the respective
resistive element. The first segment 1721 and the second segment
1722 are arranged in electrical contact with each other over
substantially the whole length 1 between the first and the second
terminal. According to embodiments the resistance of the second
segment 1722 forms a distributed resistance whose resistance per
unit length of the length 1 can be adjusted by the control
circuitry 13. In an exemplary implementation, the first segment may
comprise GST as PCM material and the first and the second terminal
may be formed of TiN.
[0089] FIG. 18 shows a block diagram of an exemplary design flow
1800 used for example, in semiconductor IC logic design,
simulation, test, layout, and manufacture. Design flow 1800
includes processes, machines and/or mechanisms for processing
design structures or devices to generate logically or otherwise
functionally equivalent representations of the design structures
and/or devices described above and shown e.g. in FIGS. 1-17. The
design structures processed and/or generated by design flow 1800
may be encoded on machine-readable transmission or storage media to
include data and/or instructions that when executed or otherwise
processed on a data processing system generate a logically,
structurally, mechanically, or otherwise functionally equivalent
representation of hardware components, circuits, devices, or
systems. Machines include, but are not limited to, any machine used
in an IC design process, such as designing, manufacturing, or
simulating a circuit, component, device, or system. For example,
machines may include: lithography machines, machines and/or
equipment for generating masks (e.g. e-beam writers), computers or
equipment for simulating design structures, any apparatus used in
the manufacturing or test process, or any machines for programming
functionally equivalent representations of the design structures
into any medium (e.g. a machine for programming a programmable gate
array).
[0090] Design flow 1800 may vary depending on the type of
representation being designed. For example, a design flow 1800 for
building an application specific IC (ASIC) may differ from a design
flow 1800 for designing a standard component or from a design flow
1800 for instantiating the design into a programmable array, for
example a programmable gate array (PGA) or a field programmable
gate array (FPGA) offered by Altera.RTM. Inc. or Xilinx.RTM.
Inc.
[0091] FIG. 18 illustrates multiple such design structures
including an input design structure 1820 that is preferably
processed by a design process 1810. Design structure 1820 may be a
logical simulation design structure generated and processed by
design process 1810 to produce a logically equivalent functional
representation of a hardware device. Design structure 1820 may also
or alternatively comprise data and/or program instructions that
when processed by design process 1810, generate a functional
representation of the physical structure of a hardware device.
Whether representing functional and/or structural design features,
design structure 1820 may be generated using electronic
computer-aided design (ECAD) such as implemented by a core
developer/designer. When encoded on a machine-readable data
transmission, gate array, or storage medium, design structure 1820
may be accessed and processed by one or more hardware and/or
software modules within design process 1810 to simulate or
otherwise functionally represent an electronic component, circuit,
electronic or logic module, apparatus, device, or system such as
those shown in FIGS. 1-17. As such, design structure 1820 may
comprise files or other data structures including human and/or
machine-readable source code, compiled structures, and
computer-executable code structures that when processed by a design
or simulation data processing system, functionally simulate or
otherwise represent circuits or other levels of hardware logic
design. Such data structures may include hardware-description
language (HDL) design entities or other data structures conforming
to and/or compatible with lower-level HDL design languages such as
Verilog and VHDL, and/or higher level design languages such as C or
C++.
[0092] Design process 1810 preferably employs and incorporates
hardware and/or software modules for synthesizing, translating, or
otherwise processing a design/simulation functional equivalent of
the components, circuits, devices, or logic structures shown in
FIGS. 1-17 to generate a Netlist 1880 which may contain design
structures such as design structure 1820. Netlist 1880 may
comprise, for example, compiled or otherwise processed data
structures representing a list of wires, discrete components, logic
gates, control circuits, I/O devices, models, etc. that describes
the connections to other elements and circuits in an integrated
circuit design. Netlist 1880 may be synthesized using an iterative
process in which netlist 1880 is resynthesized one or more times
depending on design specifications and parameters for the device.
As with other design structure types described herein, netlist 1880
may be recorded on a machine-readable data storage medium or
programmed into a programmable gate array. The medium may be a
non-volatile storage medium such as a magnetic or optical disk
drive, a programmable gate array, a compact flash, or other flash
memory. Additionally, or in the alternative, the medium may be a
system or cache memory, buffer space, or electrically or optically
conductive devices and materials on which data packets may be
transmitted and intermediately stored via the Internet, or other
networking suitable means.
[0093] Design process 1810 may include hardware and software
modules for processing a variety of input data structure types
including Netlist 1880. Such data structure types may reside, for
example, within library elements 1830 and include a set of commonly
used elements, circuits, and devices, including models, layouts,
and symbolic representations, for a given manufacturing technology
(e.g., different technology nodes, 32 nm, 45 nm, 90 nm, etc.). The
data structure types may further include design specifications
1840, characterization data 1850, verification data 1860, design
rules 1870, and test data files 1885 which may include input test
patterns, output test results, and other testing information.
Design process 1810 may further include, for example, standard
mechanical design processes such as stress analysis, thermal
analysis, mechanical event simulation, process simulation for
operations such as casting, molding, and die press forming, etc.
One of ordinary skill in the art of mechanical design can
appreciate the extent of possible mechanical design tools and
applications used in design process 1810 without deviating from the
scope and spirit of the invention. Design process 1810 may also
include modules for performing standard circuit design processes
such as timing analysis, verification, design rule checking, place
and route operations, etc.
[0094] Design process 1810 employs and incorporates logic and
physical design tools such as HDL compilers and simulation model
build tools to process design structure 1820 together with some or
all of the depicted supporting data structures along with any
additional mechanical design or data (if applicable), to generate a
second design structure 1890. Design structure 1890 resides on a
storage medium or programmable gate array in a data format used for
the exchange of data of mechanical devices and structures (e.g.
information stored in a IGES, DXF, Parasolid XT, JT, DRG, or any
other suitable format for storing or rendering such mechanical
design structures). Similar to design structure 1820, design
structure 1890 preferably comprises one or more files, data
structures, or other computer-encoded data or instructions that
reside on transmission or data storage media and that when
processed by an ECAD system generate a logically or otherwise
functionally equivalent form of one or more of the embodiments of
the invention shown in FIGS. 1-17. In one embodiment, design
structure 1890 may comprise a compiled, executable HDL simulation
model that functionally simulates the devices shown in FIGS.
1-17.
[0095] Design structure 1890 may also employ a data format used for
the exchange of layout data of integrated circuits and/or symbolic
data format (e.g. information stored in a GDSII (GDS2), GL1, OASIS,
map files, or any other suitable format for storing such design
data structures). Design structure 1890 may comprise information
such as, for example, symbolic data, map files, test data files,
design content files, manufacturing data, layout parameters, wires,
levels of metal, vias, shapes, data for routing through the
manufacturing line, and any other data required by a manufacturer
or other designer/developer to produce a device or structure as
described above and shown in FIGS. 1-17. Design structure 1890 may
then proceed to a stage 1895 where, for example, design structure
1890: proceeds to tape-out, is released to manufacturing, is
released to a mask house, is sent to another design house, is sent
back to the customer, etc.
[0096] The descriptions of the various embodiments of the present
invention have been presented for purposes of illustration, but are
not intended to be exhaustive or limited to the embodiments
disclosed. Many modifications and variations will be apparent to
those of ordinary skill in the art without departing from the scope
and spirit of the described embodiments. The terminology used
herein was chosen to best explain the principles of the
embodiments, the practical application or technical improvement
over technologies found in the marketplace, or to enable others of
ordinary skill in the art to understand the embodiments disclosed
herein.
[0097] In general, modifications described for one embodiment may
be applied to another embodiment as appropriate.
* * * * *