U.S. patent application number 16/268538 was filed with the patent office on 2019-12-19 for semiconductor manufacturing apparatus and method of manufacturing semiconductor device.
This patent application is currently assigned to TOSHIBA MEMORY CORPORATION. The applicant listed for this patent is TOSHIBA MEMORY CORPORATION. Invention is credited to Hiroaki Ashidate, Katsuhiro Sato, Tomohiko SUGITA.
Application Number | 20190385867 16/268538 |
Document ID | / |
Family ID | 68838771 |
Filed Date | 2019-12-19 |
United States Patent
Application |
20190385867 |
Kind Code |
A1 |
SUGITA; Tomohiko ; et
al. |
December 19, 2019 |
SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING
SEMICONDUCTOR DEVICE
Abstract
In one embodiment, a semiconductor manufacturing apparatus
includes a substrate holder configured to hold a plurality of
substrates such that the substrates are arranged in parallel to
each other. The apparatus further includes a fluid injector
including a plurality of openings that inject fluid to areas in
which distances from surfaces of the substrates are within
distances between centers of the substrates adjacent to each other,
the fluid injector being configured to change injection directions
of the fluid injected from the openings in planes that are parallel
to the surfaces of the substrates by self-oscillation.
Inventors: |
SUGITA; Tomohiko;
(Yokkaichi, JP) ; Sato; Katsuhiro; (Yokkaichi,
JP) ; Ashidate; Hiroaki; (Mie, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOSHIBA MEMORY CORPORATION |
Minato-ku |
|
JP |
|
|
Assignee: |
TOSHIBA MEMORY CORPORATION
Minato-ku
JP
|
Family ID: |
68838771 |
Appl. No.: |
16/268538 |
Filed: |
February 6, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/02041 20130101;
H01L 21/67051 20130101; H01L 21/67057 20130101; H01L 21/67017
20130101; H01L 21/306 20130101; H01L 21/68771 20130101 |
International
Class: |
H01L 21/67 20060101
H01L021/67; H01L 21/687 20060101 H01L021/687; H01L 21/306 20060101
H01L021/306; H01L 21/02 20060101 H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 19, 2018 |
JP |
2018-116357 |
Claims
1. A semiconductor manufacturing apparatus comprising: a substrate
holder configured to hold a plurality of substrates such that the
substrates are arranged in parallel to each other; and a fluid
injector including a plurality of openings that inject fluid to
areas in which distances from surfaces of the substrates are within
distances between centers of the substrates adjacent to each other,
the fluid injector being configured to change injection directions
of the fluid injected from the openings in planes that are parallel
to the surfaces of the substrates by self-oscillation.
2. The apparatus of claim 1, wherein the substrate holder holds N
substrates such that (N-1) gaps are provided between the N
substrates where N is an integer of three or more, each opening of
the fluid injector injects the fluid to only one corresponding gap
of the N-1 gaps, and the fluid injector periodically changes the
injection directions of the fluid in the planes that are parallel
to the surfaces of the substrates.
3. The apparatus of claim 1, wherein the fluid injector includes a
first pipe that includes a first hole, a second pipe that includes
a second hole and a third hole and surrounds the first pipe, and a
third pipe that includes a fourth hole corresponding to one of the
openings and surrounds the second pipe, the fluid flows from a
first space in the first pipe into a second space between the first
pipe and the second pipe through the first hole, flows from the
second space into a third space between the second pipe and the
third pipe through the second hole, returns from the third space to
the second space through the third hole, and is injected from the
third space through the fourth hole.
4. The apparatus of claim 3, wherein the second pipe includes, as
the third hole, a pair of holes provided to sandwich the second
hole.
5. The apparatus of claim 1, wherein the fluid injector includes: a
first flow passage configured to transfer the fluid from an inlet
to an outlet that corresponds to one of the openings; and a second
flow passage configured to return the fluid in the first flow
passage from a side of the outlet to a side of the inlet.
6. The apparatus of claim 5, wherein the fluid injector includes,
as the second flow passage, a pair of flow passages provided to
sandwich the first flow passage.
7. The apparatus of claim 5, wherein the fluid injector is provided
inside a pipe configured to supply the fluid to the inlet of the
fluid.
8. The apparatus of claim 5, wherein the fluid injector is provided
outside a pipe configured to supply the fluid to the inlet of the
fluid.
9. The apparatus of claim 1, wherein the fluid injector includes: a
pipe that is partitioned into a first flow passage configured to
transfer the fluid and a second flow passage configured to receive
the fluid from the first flow passage, and includes a first hole
corresponding to one of the openings on a side of the second flow
passage; a first member that is provided in the pipe so as to
partition the first flow passage and the second flow passage, and
includes a second hole; and a second member that is provided in the
second flow passage, and forms a flow passage configured to return
the fluid in the second flow passage from a side of the first hole
to a side of the second hole.
10. The apparatus of claim 9, wherein the second member forms a
pair of flow passages configured to return the fluid in the second
flow passage from the side of the first hole to the side of the
second hole.
11. The apparatus of claim 1, wherein the fluid injector
periodically changes the injection directions of the fluid in the
planes that are parallel to the surfaces of the substrates.
12. The apparatus of claim 11, wherein a cycle of the periodical
change is 10 seconds or less.
13. A semiconductor manufacturing apparatus comprising: a substrate
holder configured to hold a substrate to be treated by single
substrate processing; and a fluid injector including an opening
that injects fluid to a surface of the substrate, the fluid
injector being configured to change an injection direction of the
fluid injected from the opening in a plane that is parallel to the
surface of the substrate by self-oscillation.
14. The apparatus of claim 13, wherein the fluid injector includes:
a first flow passage configured to transfer the fluid from an inlet
to an outlet that corresponds to the opening; and a second flow
passage configured to return the fluid in the first flow passage
from a side of the outlet to a side of the inlet.
15. The apparatus of claim 14, wherein the fluid injector includes,
as the second flow passage, a pair of flow passages provided to
sandwich the first flow passage.
16. A method of manufacturing a semiconductor device, comprising:
holding a plurality of substrates by a substrate holder such that
the substrates are arranged in parallel to each other; and
injecting fluid from a plurality of openings of a fluid injector to
areas in which distances from surfaces of the substrates are within
distances between centers of the substrates adjacent to each other,
wherein the fluid injector changes injection directions of the
fluid injected from the openings in planes that are parallel to the
surfaces of the substrates by self-oscillation.
17. The method of claim 16, wherein the substrate holder holds N
substrates such that (N-1) gaps are provided between the N
substrates where N is an integer of three or more, each opening of
the fluid injector injects the fluid to only one corresponding gap
of the N-1 gaps, and the fluid injector periodically changes the
injection directions of the fluid in the planes that are parallel
to the surfaces of the substrates.
18. The method of claim 16, wherein the fluid injector includes a
first pipe that includes a first hole, a second pipe that includes
a second hole and a third hole and surrounds the first pipe, and a
third pipe that includes a fourth hole corresponding to one of the
openings and surrounds the second pipe, and the fluid flows from a
first space in the first pipe into a second space between the first
pipe and the second pipe through the first hole, flows from the
second space into a third space between the second pipe and the
third pipe through the second hole, returns from the third space to
the second space through the third hole, and is injected from the
third space through the fourth hole.
19. The method of claim 16, wherein the fluid injector includes: a
first flow passage configured to transfer the fluid from an inlet
to an outlet that corresponds to one of the openings; and a second
flow passage configured to return the fluid in the first flow
passage from a side of the outlet to a side of the inlet.
20. The method of claim 16, wherein the fluid injector includes: a
pipe that is partitioned into a first flow passage configured to
transfer the fluid and a second flow passage configured to receive
the fluid from the first flow passage, and includes a first hole
corresponding to one of the openings on a side of the second flow
passage; a first member that is provided in the pipe so as to
partition the first flow passage and the second flow passage, and
includes a second hole; and a second member that is provided in the
second flow passage, and forms a flow passage configured to return
the fluid from a side of the first hole to a side of the second
hole.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2018-116357, filed on Jun. 19, 2018, the entire contents of which
are incorporated herein by reference.
FIELD
[0002] Embodiments described herein relate to a semiconductor
manufacturing apparatus and a method of manufacturing a
semiconductor device.
BACKGROUND
[0003] When fluid such as liquid and gas is supplied from a nozzle
to a wafer, there is a problem that unevenness of supply amounts of
the fluid is generated between areas on the wafer. For example,
there is a problem that an area exposed to the flow of the fluid
and an area unlikely to be exposed to the flow of the fluid are
generated on the wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a schematic diagram illustrating a configuration
of a semiconductor manufacturing apparatus of a first
embodiment;
[0005] FIG. 2 is a sectional view illustrating a configuration of a
substrate treatment tank of the first embodiment;
[0006] FIGS. 3A to 3C are perspective views and a sectional view
illustrating a structure of a nozzle of the first embodiment;
[0007] FIGS. 4A and 4B are sectional views for illustrating
functions of nozzles of the first embodiment;
[0008] FIGS. 5A and 5B are sectional views for illustrating
functions of nozzles of a comparative example of the first
embodiment;
[0009] FIGS. 6A to 6C are perspective views and a sectional view
illustrating a structure of a nozzle of a second embodiment;
[0010] FIG. 7 is a perspective view for illustrating a function of
the nozzle of the second embodiment;
[0011] FIGS. 8A and 8B are perspective views illustrating
structures of nozzles of modifications of the second
embodiment;
[0012] FIG. 9 is a perspective view illustrating a nozzle of a
modification of the second embodiment; and
[0013] FIGS. 10A to 10C are a sectional view and perspective views
illustrating a structure of a nozzle of a third embodiment.
DETAILED DESCRIPTION
[0014] In one embodiment, a semiconductor manufacturing apparatus
includes a substrate holder configured to hold a plurality of
substrates such that the substrates are arranged in parallel to
each other. The apparatus further includes a fluid injector
including a plurality of openings that inject fluid to areas in
which distances from surfaces of the substrates are within
distances between centers of the substrates adjacent to each other,
the fluid injector being configured to change injection directions
of the fluid injected from the openings in planes that are parallel
to the surfaces of the substrates by self-oscillation.
[0015] Embodiments will now be explained with reference to the
accompanying drawings. In FIGS. 1 to 10C, the same or similar
components are denoted by the same reference numerals, and
overlapped description will be omitted.
First Embodiment
[0016] FIG. 1 is a schematic diagram illustrating a configuration
of a semiconductor manufacturing apparatus of a first embodiment.
The semiconductor manufacturing apparatus of FIG. 1 is a batch
substrate treatment apparatus that treats a plurality of substrates
(wafers) 1 with substrate treatment solution 2.
[0017] The semiconductor manufacturing apparatus of FIG. 1 includes
a substrate treatment tank 11, a substrate holder 12, an overflow
module 13, a circulation flow passage 14, a pump 15, a heater 16, a
cleaner 17, a plurality of nozzles 18, a controller 19 and a water
level sensor 20. The nozzles 18 are examples of a fluid
injector.
[0018] FIG. 1 illustrates the X direction and the Y direction
substantially parallel to an installation surface of the
semiconductor manufacturing apparatus and perpendicular to each
other, and the Z direction substantially perpendicular to the
installation surface of the semiconductor manufacturing apparatus.
In this specification, the +Z direction is treated as the upper
direction, and the -Z direction is treated as the lower direction.
The -Z direction may coincide with the gravity direction, or may
not coincide with the gravity direction.
[0019] The substrate treatment tank 11 houses the plurality of
substrates 1 and the substrate treatment solution 2. These
substrates 1 are soaked in the substrate treatment solution 2
inside the substrate treatment tank 11 to be treated by the
substrate treatment solution 2. The substrate holder 12 holds these
substrates 1 in the substrate treatment tank 11. These substrates 1
are held such that respective surfaces of the substrates 1 (first
and second principal planes) become perpendicular to the Y
direction, and the substrates 1 are arranged in parallel to each
other.
[0020] The substrate treatment solution 2 overflown from the
substrate treatment tank 11 is stored in the overflow module 13,
and is discharged from the overflow module 13 to the circulation
flow passage 14. The pump 15, the heater 16, and the cleaner 17 are
provided in series with the circulation flow passage 14. The pump
15 carries the substrate treatment solution 2 through the
circulation flow passage 14. The heater 16 heats the substrate
treatment solution 2 that flows through the circulation flow
passage 14. The cleaner 17 cleans the substrate treatment solution
2 that flows through the circulation flow passage 14 by a filter or
the like.
[0021] The substrate treatment solution 2 that passes through the
pump 15, the heater 16, and the cleaner 17 is supplied from the
circulation flow passage 14 to the substrate treatment tank through
the nozzles 18 again. Thus, the substrate treatment solution 2
circulates between the substrate treatment tank 11 and the
circulation flow passage 14. The nozzles 18 inject the substrate
treatment solution 2 to gaps between the substrates 1 or to the
vicinity of the surfaces of the substrates 1. The nozzles 18 are
installed outside the substrate treatment tank 11 in FIG. 1, but
may be disposed inside the substrate treatment tank 11 as described
below.
[0022] The controller 19 controls the operation of the
semiconductor manufacturing apparatus. Examples of the controller
19 include a processor, an electric circuit, a PC (Personal
Computer). For example, the controller 19 causes the pump 15 to
control circulation or a flow rate of the substrate treatment
solution 2. The controller 19 controls the operation of the heater
16 to control the temperature of the substrate treatment solution
2. The controller 19 has a function of stopping the operation of
the semiconductor manufacturing apparatus on the basis of a water
level lowering signal from the water level sensor 20 that monitors
the water level of the overflow module 13.
[0023] The substrate treatment solution 2 is, for example, solution
or liquid chemicals that treat(s) the substrates 1, and is/are more
specifically cleaning solution, rinse solution, etchant, or the
like. The substrate treatment solution 2 may be replaced with fluid
other than the liquid (for example, gas, gas-liquid mixed fluid,
supercritical fluid, or solid-liquid mixed fluid). However, in this
case, components for liquid (such as the overflow module 13)
composing the semiconductor manufacturing apparatus is replaced
with components for gas, gas-liquid mixed fluid, supercritical
fluid, solid-liquid mixed fluid, or the like.
[0024] FIG. 2 is a sectional view illustrating a configuration of a
substrate treatment tank 11 of the first embodiment.
[0025] FIG. 2 illustrates eight substrates 1 housed in the
substrate treatment tank 11, and seven openings provided in the one
nozzle 18. These substrates 1 are held so as to be arranged in
parallel to each other. Consequently, the seven gaps are provided
between the eight substrates 1.
[0026] As illustrated by arrows in FIG. 2, the seven openings of
the nozzle 18 inject the substrate treatment solution 2 to the
seven gaps. More specifically, the openings and the gaps correspond
on a one-to-one basis, and each opening injects the substrate
treatment solution 2 to only a corresponding gap of these gaps. For
example, an opening for a certain substrate injects the substrate
treatment solution 2 to an area in which a distance from a surface
of the substrate 1 is within a distance between the centers of the
substrates 1 adjacent to each other. Consequently, the substrate
treatment solution 2 is supplied to the respective surfaces of the
substrates 1. The distance between the centers of the substrates 1
adjacent to each other means substantially a distance between the
substrates 1 illustrated in FIG. 2.
[0027] Each substrate 1 includes a first principal plane formed
with a transistor and a memory cell, and a second principal plane
on a side opposite to the first principal plane, as surfaces. In
this embodiment, the first principal plane is an object to be
treated by the substrate treatment solution 2, and the second
principal plane is not an object to be treated by the substrate
treatment solution 2. Therefore, the substrate treatment solution 2
of this embodiment needs to be injected to at least the respective
first principal planes of the substrates 1.
[0028] Each of the eight substrates 1 illustrated in FIG. 2 is held
such that the first principal plane is directed to the left, and
the second principal plane is directed to the right. Therefore, the
first principal plane of each substrate 1 faces the second
principal plane of the adjacent substrate 1, and the second
principal plane of each substrate 1 faces the first principal plane
of the substrates 1 adjacent to each other. Therefore, each opening
injects the substrate treatment solution 2 to at least the first
principal plane of the one corresponding substrate 1. In this case,
another opening that allows the substrate treatment solution 2 to
be injected to the first principal plane of the leftmost substrate
1 needs to be provided in the nozzle 18. This opening allows the
substrate treatment solution 2 to be injected to the area in which
a distance from the surface of the substrate 1 is within a distance
between the centers of the substrates 1 adjacent to each other.
[0029] On the other hand, each of the eight substrates 1
illustrated in FIG. 2 may be held such that the first principal
plane faces the first principal plane, and the second principal
plane may be held so as to face the second principal plane of the
adjacent substrate 1. In this case, each opening allows the
substrate treatment solution 2 to be injected to the first
principal planes of the two corresponding substrates 1. Therefore,
the nozzle 18 in this case only need to include four openings for
the eight substrates 1.
[0030] Hereinafter, the details of each nozzle 18 of this
embodiment will be described. In the following description, the
substrate treatment solution 2 is appropriately abbreviated to
"liquid 2".
[0031] FIGS. 3A to 3C are perspective views and a sectional view
illustrating a structure of the nozzle 18 of the first
embodiment.
[0032] As illustrated in FIG. 3A, the nozzle 18 of this embodiment
includes a first pipe 21 having one row of first holes 21a, a
second pipe 22 having one row of second holes 22a, and two rows of
third holes 22b, 22c, and a third pipe 23 having one row of fourth
holes 23a. The second pipe 22 surrounds the first pipe 21, and the
third pipe 23 surrounds the second pipe 22. The fourth holes 23a
correspond to the openings of the nozzles 18 illustrated in FIG.
2.
[0033] These holes are classified in a plurality of sets of holes
for each XZ cross-section. FIG. 3B illustrates the one first hole
21a, the one second hole 22a, the two third holes 22b, 22c, and the
one fourth hole 23a as a single set of holes. Arrows A0 to A6
denote the flow of the liquid 2 through these holes.
[0034] As illustrated in FIG. 3B, the nozzle 18 of this embodiment
changes the injection direction of the liquid 2 injected from the
fourth hole 23a in a plane in parallel to the surface of each
substrate 1 (in an XZ plane) by self-oscillation. FIG. 3B
illustrates a state in which the injection direction of the liquid
2 changes between the arrow A1 and the arrow A2 (oscillation of
jet). The nozzle 18 of this embodiment does not include any machine
or oscillator for exciting this change. The liquid 2 is supplied to
the nozzle 18 having the first to fourth holes 21a to 23a, so that
this change is self-oscillated. Hereinafter, a process of the
self-oscillation of this change will be described.
[0035] A space in the nozzle 18 is classified into a first space in
the first pipe 21, a second space between the first pipe 21 and the
second pipe 22, and a third space between the second pipe 22 and
the third pipe 23. The liquid 2 flows through the first space in
the first pipe 21, flows from the first pipe into the second space
through the first hole 21a, and flows from the second space into
the third space through the second hole 22a (arrow A0).
[0036] For example, as illustrated by the arrow A1, the liquid 2
that flows in the third space is injected from the third space
through the fourth hole 23a. At this time, the liquid 2 illustrated
by the arrow A1 flows to the vicinity of left ends of the second
hole 22a and the fourth hole 23a, and therefore a part of the
liquid 2 is not injected from the fourth hole 23a, and returns from
the third space to the second space through the third hole 22b
(arrow A3). This liquid 2 flows in the vicinity of right ends of
the second hole 22a and the fourth hole 23a by action of flowing
force (arrow A5). As a result, this liquid 2 flows as illustrated
in the arrow A2.
[0037] On the other hand, the liquid 2 that flows in the third
space is injected from the third space through the fourth hole 23a
as illustrated by the arrow A2, for example. At this time, the
liquid 2 illustrated by the arrow A2 flows into the vicinity of the
right ends of the second hole 22a and the fourth hole 23a, and
therefore a part of the liquid 2 is not injected from the fourth
hole 23a, and returns from the third space to the second space
through the third hole 22c (arrow A4). This liquid 2 flows into the
vicinity of the left ends of the second hole 22a and the fourth
hole 23a by action of flowing force (arrow A6). As a result, this
liquid 2 flows as illustrated by the arrow A1.
[0038] Thus, the flow illustrated by the arrow A1 gradually changes
to the flow illustrated by the arrow A2. On the other hand, the
flow illustrated by the arrow A2 gradually changes to the flow
illustrated by the arrow A1. As a result, the injection direction
of the liquid 2 injected from the fourth hole 23a changes between
the arrow A1 and the arrow A2. The liquid 2 in the third space is
fed back to the second space through the third holes 22b, 22c, so
that this change is self-oscillated.
[0039] Generally, in a case where liquid is supplied to a substrate
from a nozzle, generation of unevenness of supply amounts of the
liquid between areas on a substrate becomes a problem. For example,
generation of an area exposed to the flow of liquid and an area
unlikely to be exposed to the flow of the liquid in a substrate
becomes a problem. On the other hand, the nozzle 18 of this
embodiment changes the injection direction of the liquid 2 by
self-oscillation. Therefore, according to this embodiment, the
liquid 2 can be supplied to various areas on the substrate 1, and
it is possible to reduce the unevenness of the supply amounts of
the liquid 2 between the areas on the substrate 1. This is similar
to a case where fluid other than the liquid 2 is injected.
[0040] The nozzle 18 of this embodiment periodically changes the
injection direction of the liquid 2 in the plane parallel to the
surface of the substrate (in the XZ plane). More specifically, the
injection direction of the liquid 2 repeatedly changes between the
arrow A1 and the arrow A2. The cycle of this periodical change is,
for example, 10 seconds or less.
[0041] The injection direction of the liquid 2 of this embodiment
changes in the plane parallel to the plane parallel to the surface
of the substrate (in the XZ plane), but hardly changes in plane
perpendicular to the surface of the substrate 1 (in a YZ plane or
the like). This state is illustrated in FIG. 3C. In FIG. 3C, all
the injection directions of the liquid 2 injected from the three
fourth holes 23a change in the XZ planes. In other word, an X
component and a Z component of the flow velocity of the liquid 2 in
each fourth hole 23a change, but a Y component of the flow velocity
of the liquid 2 in each fourth hole 23a does not change. As a
result, the liquid 2 from the one fourth hole 23a is injected to
only the single gap between the substrates 1, and therefore is not
injected to other gaps between the substrates 1 (refer to FIG.
2).
[0042] Herein, the plane parallel to the surface of the substrate
is referred to as a "parallel plane", and the plane perpendicular
to the surface of the substrate 1 is referred to as a
"perpendicular plane". As described above, the injection direction
of the liquid 2 of this embodiment changes in the parallel plane,
but does not change in the perpendicular plane. Therefore, an angle
at which the injection direction changes in the parallel plane is
larger than an angle at which the injection direction changes in
the perpendicular plane. The former angle is roughly an angle
between the arrow A1 and the arrow A2 illustrated in FIG. 3B, and,
for example, about 10 degrees to about 80 degrees. On the other
hand, the latter angle is, for example, a value of 0 degrees or
near 0 degrees.
[0043] FIGS. 4A and 4B are sectional views for illustrating
functions of the nozzles 18 of the first embodiment.
[0044] FIG. 4A illustrates the two nozzles 18 that inject the
liquid 2. FIG. 4B illustrates the four nozzles 18 that inject the
liquid 2 containing bubbles 3. In FIG. 4A, the injection directions
of the liquid 2 change, so that the liquid 2 is supplied to various
areas on the substrate 1. Similarly, in FIG. 4B, the injection
directions of the liquid 2 change, so that the bubbles 3 are
supplied to various areas on the substrate 1.
[0045] FIGS. 5A and 5B are sectional views for illustrating
functions of nozzles of a comparative example of the first
embodiment.
[0046] FIG. 5A illustrates two nozzles 18 that inject liquid 2.
FIG. 5B illustrates the four nozzles 18 that inject the liquid 2
containing bubbles 3. In FIG. 5A, the injection directions of the
liquid 2 do not change, and therefore areas exposed to the flow of
the liquid 2, and areas unlikely to be exposed to the flow of the
liquid 2 are generated in the substrate 1. Similarly, the injection
directions of the liquid 2 do not change, and therefore areas
exposed to the flow of the bubbles 3, and areas unlikely to be
exposed to the bubbles 3 are generated in the substrate 1. These
problems can be solved by the change of the injection directions of
the liquid 2, as illustrated in FIG. 4A or FIG. 4B.
[0047] As described above, each nozzle 18 of this embodiment
changes the injection direction of the liquid 2 injected from each
opening (fourth hole 23a) in the plane parallel to the surface of
the substrate by self-oscillation. Therefore, according to this
embodiment, it is possible to reduce the unevenness of the supply
amounts of the liquid 2 between the areas on the substrate 1.
[0048] Treatment of this embodiment is desirably applied to, for
example, the substrate 1 for manufacturing a three-dimensional
semiconductor memory. The reason is because when the
three-dimensional memory is manufactured, a request for in-plane
uniformity of a characteristic of the substrate 1 is often strict.
This is similar to a second and third embodiments described
below.
Second Embodiment
[0049] FIGS. 6A to 6C are perspective views and a sectional view
illustrating a structure of a nozzle 18 of the second
embodiment.
[0050] The nozzle 18 of this embodiment includes an injecting
member 24 illustrated in FIG. 6A to FIG. 6C, and a pipe 25
illustrated in FIG. 6C. As illustrated in FIG. 6C, the injecting
member 24 is mounted on a side surface of the pipe 25. Liquid 2 of
this embodiment flows in the pipe 25, flows into the injecting
member 24 from the pipe 25, and is injected from the injecting
member 24 to respective surfaces of substrates 1.
[0051] As illustrated in FIG. 6A, the injecting member 24 includes
one row of inlets 24a, one row of outlets 24b, a first injecting
flow passage 24c, a second injecting flow passage 24d, a first
circulation flow passage 24e, and a second circulation flow passage
24f. The first and second injecting flow passages 24c, 24d each are
an example of a first flow passage, and the first and second
circulation flow passages 24e, 24f each are an example of a second
flow passage. The outlets 24b correspond to the openings of each
nozzle 18 illustrated in FIG. 2.
[0052] FIG. 6B illustrates an XZ cross-section of the injecting
member 24, and illustrates the one inlet 24a and the one outlet 24b
located in this XZ cross-section. The first and second injecting
flow passages 24c, 24d allows the liquid 2 to transfer from the
inlet 24a to the outlet 24b. The width in the X direction of the
first injecting flow passage 24c is constant, and the width in the
X direction of the second injecting flow passage 24d gradually
increases from an upstream side to a downstream side of the liquid
2. The first and second circulation flow passages 24e, 24f allow
the liquid 2 in the first and second injecting flow passages 24c,
24d to return from a point on the outlet 24b side to a point on the
inlet 24a side. The point on the outlet 24b side is located near
the outlet 24b, and the point on the inlet 24a side is located
between the first injecting flow passage 24c and the second
injecting flow passage 24d. Other XZ cross-sections of the
injecting member 24 have structures similar to the XZ cross-section
illustrated in FIG. 6B.
[0053] Thus, the liquid 2 of this embodiment is fed back from the
point on the outlet 24b side to the point on the inlet 24a side,
similarly to the first embodiment. Therefore, the injection
direction of the liquid 2 injected from each outlet 24b changes in
a plane parallel to the surface of the substrate (in the XZ plane)
by self-oscillation.
[0054] FIG. 7 is a perspective view for illustrating a function of
the nozzle 18 of the second embodiment.
[0055] Arrows B1 denote the inflow directions of the liquid 2 that
flows in the inlets 24a from the pipe 25. Arrows B2 denote the
injection directions of the liquid 2 injected from the outlets 24b.
The injection directions of the liquid 2 of this embodiment change
in the plane parallel to the surface of the substrate (in the XZ
plane) as illustrated by the arrows B2, but hardly change in a
plane perpendicular to the surface of the substrate 1 (in a YZ
plane or the like). The cycle of the change is similar to the case
of the first embodiment.
[0056] FIGS. 8A and 8B are perspective views illustrating
structures of nozzles 18 of modifications of the second
embodiment.
[0057] FIG. 8A and FIG. 8B each omit illustration of a whole of the
injecting member 24 for the purpose of illustrative clarity, and
illustrate only the inlets 24a and the outlets 24b of the injecting
member 24. In FIG. 8A, the injecting member 24 are disposed inside
the pipe 25, and the outlets 24b are located in the side surface of
the pipe 25. In FIG. 8B, the injecting member 24 is disposed
outside the pipe 25, and the inlets 24a are located in the side
surface of the pipe 25.
[0058] The nozzle 18 of this embodiment may employ either
configuration of FIG. 8A and FIG. 8B. The configuration of FIG. 8A
has an advantage capable of downsizing the nozzle 18, for example.
On the other hand, the configuration of FIG. 8B has an advantage
that detachable attachment of the injecting member 24 to the pipe
25 is easy, for example. In this embodiment, the only one injecting
member 24 may be mounted on the one pipe 25, or a plurality of the
injecting members 24 may be mounted on the one pipe 25.
[0059] FIG. 9 is a perspective view illustrating a structure of a
nozzle 18 of a modification of the second embodiment.
[0060] In this modification, a semiconductor manufacturing
apparatus of FIG. 1 is a single wafer processing (single substrate
processing) substrate treatment apparatus that treats a single
substrate 1 by substrate treatment solution 2. The above substrate
holder 12 is replaced with a substrate holder 12' that horizontally
holds the single substrate 1. An example of the substrate holder
12' is a stage on which the substrates 1 is placed.
[0061] The nozzle 18 of this modification includes a pipe 25, and
an injecting member 24 mounted on a tip of the pipe 25. The
injecting member 24 has the structure illustrated in FIG. 6A.
However, the number of inlets 24a of the injecting member 24 may be
one or the plural number. Similarly, the number of outlets 24b of
the injecting member 24 may be one or the plural number.
[0062] The nozzle 18 of this modification injects liquid 2 to a
substrates 1. At this time, the injection directions of the liquid
2 injected from the outlets 24b changes in a plane parallel to a
surface of substrate 1 (in an XY plane) by self-oscillation.
[0063] As described above, the nozzle 18 of this embodiment changes
the injection direction of the liquid 2 injected from each opening
(outlet 24b) in the plane parallel to the surface of the substrate
1 by self-oscillation. Therefore, according to this embodiment,
unevenness of supply amounts of the liquid 2 between areas on the
substrates 1 can be reduced similarly to the first embodiment.
Third Embodiment
[0064] FIGS. 10A to 10C are perspective views and a sectional view
illustrating a structure of a nozzle 18 of a third embodiment.
[0065] The nozzle 18 of this embodiment includes one pipe 26 having
a tubular shape, one first member 27 having a plate shape, and two
second members 28 having a rod shape, as illustrated in FIG. 10A to
FIG. 10C.
[0066] As illustrated in FIG. 10A, a space in the pipe 26 is
partitioned into a lower space that functions as a first flow
passage which allows liquid 2 to be transferred, and an upper space
that functions as a second flow passage into which the liquid 2
flows from the first flow passage. The first flow passage and the
second flow passage are partitioned by the first member 27 provided
in the pipe 26. On the other hand, the two second members 28 are
provided in parallel to each other in the second flow passage.
[0067] As illustrated in FIG. 10C, the pipe 26 includes one row of
first holes 26a, and the first member 27 includes one row of second
holes 27a. The first holes 26a are provided on the second flow
passage side of the pipe 26, and correspond to the openings of the
nozzle 18 illustrated in FIG. 2.
[0068] FIG. 10B illustrates an XZ cross-section of the nozzle 18,
and illustrates the one first hole 26a and the one second hole 27a
located in this XZ cross-section. The liquid 2 in the first flow
passage flows into the second flow passage through the second hole
27a. The two second members 28 form a flow passage that allows this
liquid 2 to return from a point on the first hole 26a side to a
point on the second hole 27a side. The point on the first hole 26a
side is located near the first hole 26a, and the point on the
second hole 27a side is located near the second hole 27a. Other XZ
cross-sections of the nozzle 18 of this embodiment have structures
similar to the XZ cross-section illustrated in FIG. 10B.
[0069] Thus, the liquid 2 of this embodiment is fed back from the
point on the first hole 26a side to the point on the second hole
27a side, similarly to the first and second embodiments. Therefore,
the injection direction of the liquid 2 injected from each first
hole 26a changes in a plane parallel to the surface of the
substrate 1 (in the XZ plane) by self-oscillation. The function of
the nozzle 18 of this embodiment is similar to the function of the
nozzle 18 of the second embodiment described with reference to FIG.
7.
[0070] As described above, the nozzle 18 of this embodiment changes
the injection direction of the liquid 2 injected from each opening
(first hole 26a) in the plane parallel to the surface of the
substrate 1 by self-oscillation. Therefore, according to this
embodiment, unevenness of supply amounts of the liquid 2 between
areas on the substrates 1 can be reduced similarly to the first and
second embodiments.
[0071] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
apparatuses and methods described herein may be embodied in a
variety of other forms; furthermore, various omissions,
substitutions and changes in the form of the apparatuses and
methods described herein may be made without departing from the
spirit of the inventions. The accompanying claims and their
equivalents are intended to cover such forms or modifications as
would fall within the scope and spirit of the inventions.
* * * * *