U.S. patent application number 16/551145 was filed with the patent office on 2019-12-12 for circular printed memory device with rotational detection.
The applicant listed for this patent is Xerox Corporation. Invention is credited to Christopher David Blair, Markus R. Silvestri.
Application Number | 20190378847 16/551145 |
Document ID | / |
Family ID | 61274082 |
Filed Date | 2019-12-12 |
United States Patent
Application |
20190378847 |
Kind Code |
A1 |
Blair; Christopher David ;
et al. |
December 12, 2019 |
CIRCULAR PRINTED MEMORY DEVICE WITH ROTATIONAL DETECTION
Abstract
A circular printed memory device and a method for fabricating
the circular printed memory device are disclosed. For example, the
circular printed memory device includes a base substrate, a
plurality of bottom electrodes arranged in a circular pattern on
the base substrate, a ferroelectric layer on top of the plurality
of bottom electrodes and a single top electrode on the
ferroelectric layer that contacts each one of the plurality of
bottom electrodes via the ferroelectric layer.
Inventors: |
Blair; Christopher David;
(Webster, NY) ; Silvestri; Markus R.; (Fairport,
NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Xerox Corporation |
Norwalk |
CT |
US |
|
|
Family ID: |
61274082 |
Appl. No.: |
16/551145 |
Filed: |
August 26, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15450856 |
Mar 6, 2017 |
10396085 |
|
|
16551145 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G06K 19/067 20130101;
G11B 9/1454 20130101; G11B 9/02 20130101; G11C 29/12 20130101; G11C
2029/0403 20130101; G11C 5/04 20130101; G11C 11/221 20130101; G11C
5/02 20130101; H01L 22/14 20130101; H01L 27/11507 20130101; G11C
11/2273 20130101 |
International
Class: |
H01L 27/11507 20060101
H01L027/11507; H01L 21/66 20060101 H01L021/66; G11C 11/22 20060101
G11C011/22; G11C 29/12 20060101 G11C029/12; G11C 5/04 20060101
G11C005/04; G11C 5/02 20060101 G11C005/02; G11B 9/02 20060101
G11B009/02; G06K 19/067 20060101 G06K019/067 |
Claims
1. A method for fabricating a circular printed memory device,
comprising: providing a base substrate; applying a plurality of
bottom electrodes in a circular pattern on the base substrate;
applying a circular ferroelectric layer on top of the plurality of
bottom electrodes; and applying a single top electrode on top of
the ferroelectric layer, wherein the ferroelectric layer contacts
each one of the plurality of bottom electrodes and the single top
electrode.
2. The method of claim 1, comprising: applying an additional
conductive contact layer on a contact area of each one of the
plurality of bottom electrode.
3. The method of claim 2, wherein a memory cell is formed by each
one of the plurality of bottom electrodes intersecting the single
top electrode and the ferroelectric layer.
4. The method of claim 3, comprising: storing a single bit in the
memory cell.
5. The method of claim 1, comprising: initializing the circular
printed memory device.
6. The method of claim 5, comprising: testing write/read patterns
of the circular printed memory device via a reading device, wherein
a perimeter member of the single top electrode has an approximately
zero resistance and is identified as pin 0 by the reading
device.
7. The method of claim 6, comprising: identifying each subsequent
bottom electrode of the plurality of bottom electrodes in a
clockwise or counterclockwise fashion after the pin 0 is
identified.
8. The method of claim 1, wherein the base substrate comprises a
continuous roll and the method is repeated to fabricate a plurality
of circular printed memory devices.
9. The method of claim 1, wherein the circular pattern comprises a
single open position between two of the plurality of bottom
electrodes and a center open position at a center of the circular
pattern.
10. The method of claim 9, wherein the single top electrode
comprises a ring comprising a center member and a perimeter
member.
11. The method of claim 10, wherein the perimeter member is located
on top of the ferroelectric layer in the single open position.
12. The method of claim 10, wherein the perimeter member and each
one of the plurality of bottom electrodes comprise an approximately
circular contact pad.
13. The method of claim 10, wherein the center member is located on
top of the ferroelectric layer in the center member.
14. The method of claim 1, wherein a number of the plurality of
bottom electrodes is a function of a number of bits to be stored in
the circular printed memory device.
15. A circular printed memory device, comprising: a base substrate;
a plurality of bottom electrodes arranged in a circular pattern on
the base substrate; a ferroelectric layer on coupled to the
plurality of bottom electrodes; and a top electrode on the
ferroelectric layer, wherein the ferroelectric layer contacts each
one of the plurality of bottom electrodes and the top
electrode.
16. The circular printed memory device of claim 15, wherein the
circular pattern comprises a single open position between two of
the plurality of bottom electrodes and a center open position at a
center of the circular pattern.
17. The circular printed memory device of claim 16, wherein the
single top electrode comprises a ring comprising a center member
and a perimeter member.
18. The circular printed memory device of claim 17, wherein the
perimeter member is located on top of the ferroelectric layer in
the single open position.
19. A circular printed memory device, comprising: a flexible base
substrate; a plurality of bottom electrodes arranged in a circular
pattern on the flexible base substrate, wherein the circular
pattern includes a single opening between two of the plurality of
bottom electrodes having and a center opening in a center of the
circular pattern, the single opening having a size approximately
equal to a size of one of the plurality of bottom electrodes,
wherein each one of the plurality of bottom electrodes comprises a
circular contact and an extended member; a ferroelectric layer on
top of the plurality of bottom electrodes; and a single top
electrode on the ferroelectric layer, wherein the single top
electrode comprises a ring, a center member and a perimeter member,
wherein the ring, the center member and the perimeter member are a
single continuous piece, wherein the perimeter member has an
approximately same shape as the each one of the plurality of bottom
electrodes, wherein the ring contacts the extended member of the
each one of the plurality of bottom electrodes via the
ferroelectric layer, the center member is located in the center
opening and the perimeter member is located over the single
opening.
20. The circular printed memory device of claim 19, wherein the
perimeter member has an approximately zero resistance that
identifies perimeter member of the single top electrode as pin 0 to
a reading device.
Description
[0001] This application is a continuation of U.S. patent
application Ser. No. 15/450,856, filed Mar. 6, 2017, now U.S. Pat.
No. 10,396,085, which is herein incorporated by reference in its
entirety.
[0002] The present disclosure relates generally to printed memory
devices and, more particularly, to circular printed memory devices
with rotational detection and methods for creating the same.
BACKGROUND
[0003] Printed memory devices may store a bit of information
through the state of an active layer sandwiched between two
crossing conductor lines or electrodes. The printed memory devices
may be used for a variety of different applications. For example,
the printed memory devices may store a combination of bits that can
be used for identification or other applications.
[0004] Currently, the electrodes of printed memory devices are
printed in a linear pattern along straight lines. With certain
linear patterns if the contact to the electrode fails, then the
entire line of associated cells that store the bits may fail.
Printed memory devices also use sets of linear electrodes that
cross each other forming a matrix of intersecting points. The
memory device with the electrodes of intersecting points may have a
lower tolerance for misalignment when electrical contact is made.
Thus, if the electrical contact of an electrode is misaligned with
an electrical pin of a device that reads the output of the printed
memory device, an error may occur.
SUMMARY
[0005] According to aspects illustrated herein, there are provided
a circular printed memory device and a method for fabricated the
circular printed memory device. One disclosed feature of the
embodiments is a circular printed memory device that comprises a
base substrate, a plurality of bottom electrodes arranged in a
circular pattern on the base substrate, a ferroelectric layer on
top of the plurality of bottom electrodes and a single top
electrode on the ferroelectric layer that contacts each one of the
plurality of bottom electrodes via the ferroelectric layer.
[0006] Another disclosed feature of the embodiments is a method for
fabricating the circular printed memory device. In one embodiment,
the method comprises providing a base substrate, applying a
plurality of bottom electrodes in a circular pattern on the base
substrate, applying a circular ferroelectric layer on top of the
plurality of bottom electrodes and applying a single top electrode
on top of the ferroelectric layer, wherein the single top electrode
contacts each one of the plurality of bottom electrodes via the
ferroelectric layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The teaching of the present disclosure can be readily
understood by considering the following detailed description in
conjunction with the accompanying drawings, in which:
[0008] FIG. 1 illustrates an exploded view of an example circular
printed memory device;
[0009] FIG. 2 illustrates a top view of the example circular
printed memory device;
[0010] FIG. 3 illustrates a flowchart of an example method for
fabricating a circular printed memory device;
[0011] FIG. 4 illustrates a process flow diagram of an example
method for fabricating a circular printed memory device; and
[0012] FIG. 5 illustrates a high-level block diagram of a computer
suitable for use in performing the functions described herein.
[0013] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures.
DETAILED DESCRIPTION
[0014] The present disclosure broadly discloses circular printed
memory devices with rotational detection and method for creating
the same. As discussed above, currently used printed memory devices
are printed with linear electrodes crisscrossing with an active
layer between them. If one contact to an electrode fails, then the
entire line of cells on that electrode may fail. The printed memory
device with the linear electrodes may have a lower tolerance for
misalignment when printed. Thus, if an electrical contact is
misaligned with an electrical pin of a device that reads the output
of the printed memory device, an error may occur.
[0015] Embodiments of the present disclosure provide a circular
printed memory device. The circular pattern may use circular
electrical contacts that provide a higher amount of contact area
than the linear pattern printed memory device as a ratio to the
area of the entire device is increased. As a result more latitude
for misalignment of the electrical pin of a reading device to the
contact point may be provided.
[0016] FIG. 1 illustrates an exploded view of an example of a
circular printed memory device 100. The circular printed memory
device 100 may include a base substrate 102, a plurality of bottom
electrodes 104.sub.1-104.sub.n (hereinafter also referred to
individually as a bottom electrode 104 or collectively as bottom
electrodes 104), a ferroelectric layer 106 and a single top
electrode 108. In one embodiment, the base substrate 102, the
bottom electrodes 104, the ferroelectric layer 106 and the single
top electrode 108 may be layered on top of one another.
[0017] In one embodiment, the base substrate 102 may be a flexible
material. For example, the flexible material may be a flexible
plastic. Example flexible plastics may include polyethylene
naphthalate (PEN), polyethylene terephthalate (PET), and the
like.
[0018] In one embodiment, the base substrate 102 may be provided as
a continuous sheet. For example, the base substrate 102 may be
rolled and fed through an assembly line that produces a plurality
of circular printed memory devices 100. Each circular printed
memory device 100 may then be stamped or cut out of the continuous
sheet of the base substrate 102.
[0019] In one embodiment, the plurality of bottom electrodes 104
and the single top electrode 108 may be fabricated from a
conductive material. Example conductive materials may include
copper, gold, silver, aluminum, and the like.
[0020] In one embodiment, each bottom electrode 104 may have a
circular contact area 116 and an extended member 118. The circular
contact area 116 and the extended member 118 may be a single
continuous piece of the conductive material. The overall shape of
each bottom electrode 104 may be a paddle with a handle.
[0021] The bottom electrodes 104 may be arranged in a circular
pattern on the base substrate 102. The bottom electrodes 104 may be
arranged in the circular pattern with the circular contact area 116
on the outer perimeter and the extended member 118 pointing towards
a center of the circular pattern. The circular pattern may form a
center opening 122 in the center of the circular pattern of bottom
electrodes 104. In addition, the circular pattern of bottom
electrodes 104 may leave a single open position 120 between two of
the plurality of bottom electrodes 104. The size of the single open
position 120 may be large enough to fit another bottom electrode
104 between two of the bottom electrodes 104 arranged in the
circular pattern.
[0022] In one embodiment, the number of bottom electrodes 104 may
be a function of a number of bits that will be stored in the
circular printed memory device. In one example, for a 20 bit
circular printed memory device with rotational detection, 20 bottom
electrodes 104 may be laid on top of the base substrate 102.
However, it should be noted that any number (e.g., more or less
than 20) of bottom electrodes 104 may be added depending on a
desired number of bits.
[0023] In one embodiment, the ferroelectric layer 106 may provide a
material that can be polarized with the application of a voltage or
electric field. In other words, the polarization state of the
ferroelectric layer 106 can be set or switched by applying
appropriate voltages to the bottom electrodes 104 and the single
top electrode 108. The bottom electrodes 104 intersecting the
ferroelectric layer 106 and the single top electrode 108 may form
the individual memory cells that store the bits for the circular
printed memory device 100. Any type of ferroelectric material may
be used for the ferroelectric layer 106. In one embodiment, the
ferroelectric layer 106 may comprise a polymer containing fluorine
such as polytetrafluoroethylene (PTFE), perfluoroalkoxy (PFA),
polyvinylidene fluoride (PVDF), trifluoreethylene (TFE), and the
like, or combinations thereof.
[0024] In one embodiment, the single top electrode 108 may be in
the shape of a ring 110. The ring 110 may include a perimeter
member 112 and a center member 114. The perimeter member 112 may
have a shape that is substantially similar to the bottom electrodes
104. For example, the perimeter member 112 may also have a circular
contact area and an extended member. The perimeter member 112 may
be aligned with the center member 114 or may be offset from the
center member 114.
[0025] In one embodiment, the ring 110, the perimeter member 112
and the center member 114 may be fabricated from a single
continuous piece of the conductive material. As a result, the
perimeter member 112 may have a very low resistance (e.g.,
approximately zero resistance) conductive path to the center member
114. For example, if the conductive material is a metal than the
perimeter member 112 may have an approximately zero resistance to
the center member 114.
[0026] Thus, when the circular printed memory device 100 is being
read by a reading device that has pins that contact the center
member 114 and the perimeter member 112, the reading device may
read low impedance (e.g., due to the approximately zero
resistance). The low impedance may infer that a pin of the reading
device on the center member 114 and another pin of the reading
device on the perimeter member 112 are directly connected, and, as
a result, identify the pin on the perimeter member 112 as pin 0. In
other words, the perimeter member 112 may be an identifying contact
that can be read no matter how the circular printed memory device
100 is oriented or rotated. As a result, the circular printed
memory device 100 does not have to be manipulated or rotated to
have the bits of the printed memory device 100 properly read by a
reading device. The reading device may automatically detect the
perimeter member 112 by the low impedance (e.g., due to the
approximately zero resistance) and know the order of the remaining
pins of the bottom electrodes 104.sub.1-104.sub.n.
[0027] In one embodiment, the single top electrode 108 may be
applied on top of the ferroelectric layer 106. The single top
electrode 108 may be positioned such that the center member 114 is
located approximately in the center of the center opening 122 and
the perimeter member 112 is located in the single open position
120. The perimeter member 112 may be positioned to appear as it is
aligned along the circumference of the circular pattern and spaced
the same as each one of the bottom electrodes 104. In other words,
from a top down view (shown in FIG. 2), the perimeter member 112
would appear to be another bottom electrode 104 within the circular
pattern.
[0028] In addition, the single top electrode 108 may be positioned
such that the ring 110 contacts, via the ferroelectric layer 106,
the extended member 118 of each one of the bottom electrodes 104.
Thus, the diameter of the ring 110 may be sized such that the ring
110 contacts, via the ferroelectric layer 106, the extended member
118 of each one of the bottom electrodes, but does not overlap any
part of the circular contact area 116.
[0029] As discussed above, the circular contact areas 116 of the
bottom electrodes 104 consume, as a whole, less space. Therefore,
the design allows for a tighter form factor (e.g., allows the
circular printed memory device 100 to pack more memory cells, and
ultimately bits, into a smaller area than rectangular or linearly
arranged electrodes of a previous printed memory device
designs).
[0030] In addition, the circular arrangement of the bottom
electrodes 104 helps to reduce the number of bit errors if one
contact is misaligned. For example, in a rectangular or a matrix of
linear electrodes one contact error can lead to multiple faults for
all the cells on the linear electrode where the contact failed. The
bit errors associated with the cell faults cannot be corrected
using error correction algorithms because it is too costly. For
instance, a 4 by 3 matrix of linear electrodes yields 12 cells that
can store 12 bits. Some error correction code requires 4 check bits
for a 12-bit code word. If a contact to an electrode that is
connected to 3 cells fail, all these cells may fail as well. As a
result, 3 bits may be faulty. To correct 3 bits 12 check bits are
required leaving no bits to store information. In contrast, one
contact error of the circularly arranged bottom electrodes 104 can
lead only 1-bit error instead of multiple errors reducing the cost
of error correction for single contact faults.
[0031] FIG. 2 illustrates a top view of the circular printed memory
device 100. FIG. 2 illustrates the circular pattern of the bottom
electrodes 104 and the perimeter member 112 in the single open
position 120, as discussed above. FIG. 2 illustrates the ring 108
in contact, via the ferroelectric layer 106, with the extended
member 118 of each one of the bottom electrodes 104. In addition,
FIG. 2 illustrates the center member 114 in the center opening
122.
[0032] In one embodiment, the center member 114 may provide an
alignment mark 130. The alignment mark 130 may be used by a reading
device to align the pins of the reading device or machine to the
bottom electrodes 104 and the perimeter member 112.
[0033] In one embodiment, an additional conducting contact layer
124 may be applied to only the circular contact area 116 of each
one of the bottom electrodes 104 and the perimeter member 112. The
additional conducting contact layer 124 may comprise carbon or a
metal. The additional conducting contact layer 124 may provide
protection against abrasion from the pins that may occur through
making repeated contact with a reading device.
[0034] In one embodiment the ferroelectric layer 106 may cover the
bottom electrodes 104. To reestablish means to contact the bottom
electrodes 104 the ferroelectric layer 106 may be removed locally,
e.g., over the circular contact area 116 of each one of the bottom
electrodes 104, by physical and/or chemical means such as etching,
dissolving, doping, and the like.
[0035] In one embodiment, a protective layer may be applied over
the entire circular printed memory device 100 except for the
perimeter member 112, the center member 114 and the circular
contact area 116 of each one of the bottom electrodes 104 to
protect the memory cells (e.g., the ferroelectric layer 106 between
the single top electrode 110 and extended member 118 of each one of
the bottom electrodes 104) and the single top electrode 110 that is
exposed from physical contact with the outside world. The completed
circular printed memory device 100 may be initialized or
"broken-in" by polarizoing the ferroelectric layer 106 multiple
times. After initialization, the circular printed memory device 100
may be tested via a write/read bit patterns. The circular contact
area 116 of the bottom electrodes 104 arranged in a circular
pattern and the center member 114 may increase the overall contact
area and maximize the form factor. The center member 114 that has a
relatively large area and the circular symmetry of the circular
printed memory device 100 improves ease of making contact to all of
the bottom electrodes 104 and the single top electrode 108 and
significantly reduces the chances of misalignment. After
initialization and testing, the completed circular printed memory
device 100 may be cut or stamped out of the continuous sheet of the
base substrate 102 and used for a variety of different
applications.
[0036] FIG. 3 illustrates a flowchart of an example method 300 for
fabricating a circular printed memory device. In one embodiment,
one or more steps or operations of the method 300 may be performed
by a controller or a computer as illustrated in FIG. 5, and
discussed below, that controls a series of automated tools or
machines in a manufacturing plant that perform the method 300. FIG.
4 illustrates a process flow diagram 400 of the method for
fabricating the circular printed memory device. FIG. 4 may be read
in conjunction with the blocks of FIG. 3.
[0037] At block 302, the method 300 begins. At block 304, the
method 300 provides a base substrate. As shown in block 402 of the
process flow diagram 400, the base substrate 102 may be provided as
a continuous sheet from a roll of the base substrate 102 that can
be fed in an assembly line. The continuous sheet of the base
substrate 102 may be fed from left to right, or right to left. The
example in FIG. 4 illustrates the feed of the base substrate 102
moving from left to right.
[0038] At block 306, the method 300 applies a plurality of bottom
electrodes in a circular pattern on the base substrate. The
electrodes may be pre-fabricated or printed by another machine or
process within the assembly line. A machine may then place the
bottom electrodes in the circular pattern on the base
substrate.
[0039] For example, block 404 of FIG. 4 illustrates the circular
pattern. The circular pattern may include a center opening 122 and
a single open position 120. It should be noted that the number of
bottom electrodes illustrated in FIG. 4 should note be considered
limiting. In addition, the size of the bottom electrodes, the size
of the single open position 120 and the size of the center opening
122 are not drawn to scale.
[0040] In one embodiment, the base substrate 102 may be stationary
for each one of the blocks 404-412. For example, a single machine
may perform each block 404-412. In another embodiment, the base
substrate 102 may be moved for each block 404-412. In other words,
a different machine may perform each respective block 404-412.
[0041] At block 308, the method 300 applies a ferroelectric layer
on top of the plurality of bottom electrodes. For example, the
ferroelectric layer may be placed over all of the bottom electrodes
104 as shown in block 406 of FIG. 4.
[0042] At block 310, the method 300 applies a single top electrode
on top of the ferroelectric layer, wherein the single top electrode
contacts each one of the plurality of bottom electrodes via the
ferroelectric layer. As shown in block 408 of FIG. 4, the single
top electrode 108 may be positioned such that the center member 114
is located in a center of the center opening 122 (shown in block
404). In addition, the perimeter member 112 is located in the
single open position 120 (shown in block 404). In addition, the
ring 108 may contact extended member 118 of each one of the bottom
electrodes 104 via the ferroelectric layer.
[0043] Additional optional components may be added at block 310.
For example, an additional conductive contact layer may be added to
each circular contact area of the bottom electrodes and the
perimeter member 112 and the center member 114.
[0044] After the circular printed memory device 100 is completed,
the circular printed memory device 100 may be initialized and
tested. As shown in block 410 of FIG. 4, the printed memory device
100 may be connected to a voltage source 416. Voltage may be
applied across the ferroelectric layer 106 in each cell spatially
defined by the plurality of bottom electrodes 104 to polarize the
ferroelectric layer 106 and store a desired bit value (e.g., 0 or
1).
[0045] At block 412 of FIG. 4, the circular printed memory device
100 may be tested via write/read patterns performed by a reading
device 418. Pins 420.sub.1--to 420.sub.n+1 (herein after also
referred to individually as a pin 420 or collectively as pins 420)
may contact respective bottom electrodes 104.sub.1 to 104.sub.n and
the perimeter member 112. Block 412 illustrates a cross-sectional
view of the contact between the pins 420 and the bottom electrodes
104. As noted above, a pin 420 that contacts the perimeter member
112 and the center member 114 may detect low impedance (e.g., due
to the approximately zero resistance), or an approximately zero
resistance, on the perimeter member 112. The reading device 418 may
identify the perimeter member 112 as pin 0 based on the low
impedance and then identify each subsequent bottom electrode 104
sequentially in a clockwise or counterclockwise fashion.
[0046] Referring back to FIG. 3, at block 312 the method 300
determines if the method 300 should continue. For example, the
method 300 may be performed by an assembly line that provides a
continuous sheet of the base substrate. For example, a roll or
large sheet of the base substrate may be fed through the assembly
line to form a plurality of circular printed memory devices. Each
circular printed memory device may be cut or stamped out of the
continuous sheet of the base substrate. If the method 300
determines that the method 300 should continue (e.g., more of the
base substrate is available in the roll or large sheet that is fed
to the assembly line), then the method may return to block 304. As
illustrated by block 414 in FIG. 4, the sheet may be fed and the
completed circular printed memory device 100 may be moved to
provide a new base substrate. Blocks 304-312 of FIGS. 3 and 404-412
of FIG. 4 may then be repeated.
[0047] However, if the answer to block 312 is no, then the method
300 may proceed to block 316. At block 316, the method 300
ends.
[0048] It should be noted that although not explicitly specified,
one or more steps, functions, or operations of the methods 300 and
400 described above may include a storing, displaying and/or
outputting step as required for a particular application. In other
words, any data, records, fields, and/or intermediate results
discussed in the methods can be stored, displayed, and/or outputted
to another device as required for a particular application.
Furthermore, steps, blocks or operations in FIGS. 3 and 4 that
recite a determining operation or involve a decision do not
necessarily require that both branches of the determining operation
be practiced. In other words, one of the branches of the
determining operation can be deemed as an optional step. In
addition, one or more steps, blocks, functions or operations of the
above described methods 300 and 400 may comprise optional steps, or
can be combined, separated, and/or performed in a different order
from that described above, without departing from the example
embodiments of the present disclosure. Furthermore, the use of the
term "optional" in the above disclosure does not mean that any
other steps not labeled as "optional" are not optional. As such,
any claims not reciting a step that is not labeled as optional is
not to be deemed as missing an essential step, but instead should
be deemed as reciting an embodiment where such omitted steps are
deemed to be optional in that embodiment.
[0049] FIG. 5 depicts a high-level block diagram of a computer that
is dedicated to perform the functions described herein. As depicted
in FIG. 5, the computer 500 comprises one or more hardware
processor elements 502 (e.g., a central processing unit (CPU), a
microprocessor, or a multi-core processor), a memory 504, e.g.,
random access memory (RAM) and/or read only memory (ROM), a module
505 for fabricating a circular printed memory device, and various
input/output devices 506 (e.g., storage devices, including but not
limited to, a tape drive, a floppy drive, a hard disk drive or a
compact disk drive, a receiver, a transmitter, a speaker, a
display, a speech synthesizer, an output port, an input port and a
user input device (such as a keyboard, a keypad, a mouse, a
microphone and the like)). Although only one processor element is
shown, it should be noted that the computer may employ a plurality
of processor elements. Furthermore, although only one computer is
shown in the figure, if the method(s) as discussed above is
implemented in a distributed or parallel manner for a particular
illustrative example, i.e., the steps of the above method(s) or the
entire method(s) are implemented across multiple or parallel
computers, then the computer of this figure is intended to
represent each of those multiple computers. Furthermore, one or
more hardware processors can be utilized in supporting a
virtualized or shared computing environment. The virtualized
computing environment may support one or more virtual machines
representing computers, servers, or other computing devices. In
such virtualized virtual machines, hardware components such as
hardware processors and computer-readable storage devices may be
virtualized or logically represented.
[0050] It should be noted that the present disclosure can be
implemented in software and/or in a combination of software and
hardware, e.g., using application specific integrated circuits
(ASIC), a programmable logic array (PLA), including a
field-programmable gate array (FPGA), or a state machine deployed
on a hardware device, a computer or any other hardware equivalents,
e.g., computer readable instructions pertaining to the method(s)
discussed above can be used to configure a hardware processor to
perform the steps, functions and/or operations of the above
disclosed methods. In one embodiment, instructions and data for the
present module or process 505 for fabricating a circular printed
memory device (e.g., a software program comprising
computer-executable instructions) can be loaded into memory 504 and
executed by hardware processor element 502 to implement the steps,
functions or operations as discussed above in connection with the
example methods 300 and 400. Furthermore, when a hardware processor
executes instructions to perform "operations," this could include
the hardware processor performing the operations directly and/or
facilitating, directing, or cooperating with another hardware
device or component (e.g., a co-processor and the like) to perform
the operations.
[0051] The processor executing the computer readable or software
instructions relating to the above described method(s) can be
perceived as a programmed processor or a specialized processor. As
such, the present module 505 for fabricating a circular printed
memory device (including associated data structures) of the present
disclosure can be stored on a tangible or physical (broadly
non-transitory) computer-readable storage device or medium, e.g.,
volatile memory, non-volatile memory, ROM memory, RAM memory,
magnetic or optical drive, device or diskette and the like. More
specifically, the computer-readable storage device may comprise any
physical devices that provide the ability to store information such
as data and/or instructions to be accessed by a processor or a
computing device such as a computer or an application server.
[0052] It will be appreciated that variants of the above-disclosed
and other features and functions, or alternatives thereof, may be
combined into many other different systems or applications. Various
presently unforeseen or unanticipated alternatives, modifications,
variations, or improvements therein may be subsequently made by
those skilled in the art which are also intended to be encompassed
by the following claims.
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