U.S. patent application number 16/475587 was filed with the patent office on 2019-11-14 for thermoelectric module.
This patent application is currently assigned to LG CHEM, LTD.. The applicant listed for this patent is LG CHEM, LTD.. Invention is credited to Dong Sik KIM, Ki Hwan KIM, Su Jin KIM, Il Ha LEE, Byung Kyu LIM, Cheol Hee PARK.
Application Number | 20190348592 16/475587 |
Document ID | / |
Family ID | 64659847 |
Filed Date | 2019-11-14 |
![](/patent/app/20190348592/US20190348592A1-20191114-D00000.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00001.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00002.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00003.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00004.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00005.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00006.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00007.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00008.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00009.png)
![](/patent/app/20190348592/US20190348592A1-20191114-D00010.png)
United States Patent
Application |
20190348592 |
Kind Code |
A1 |
KIM; Su Jin ; et
al. |
November 14, 2019 |
THERMOELECTRIC MODULE
Abstract
A thermoelectric module that has excellent thermal, electric
properties, can realize high joining force between thermoelectric
elements and an electrode, and can maintain stable joining even at
a high temperature.
Inventors: |
KIM; Su Jin; (Daejeon,
KR) ; LEE; Il Ha; (Daejeon, KR) ; KIM; Dong
Sik; (Daejeon, KR) ; LIM; Byung Kyu; (Daejeon,
KR) ; PARK; Cheol Hee; (Daejeon, KR) ; KIM; Ki
Hwan; (Daejeon, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LG CHEM, LTD. |
Seoul |
|
KR |
|
|
Assignee: |
LG CHEM, LTD.
Seoul
KR
|
Family ID: |
64659847 |
Appl. No.: |
16/475587 |
Filed: |
May 30, 2018 |
PCT Filed: |
May 30, 2018 |
PCT NO: |
PCT/KR2018/006163 |
371 Date: |
July 2, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 35/18 20130101;
H01L 35/08 20130101; H01L 35/16 20130101; H01L 35/14 20130101 |
International
Class: |
H01L 35/08 20060101
H01L035/08; H01L 35/18 20060101 H01L035/18; H01L 35/16 20060101
H01L035/16; H01L 35/14 20060101 H01L035/14 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 15, 2017 |
KR |
10-2017-0076058 |
Claims
1. A thermoelectric module comprising: A) at least a first and a
second thermoelectric element, the first and second thermoelectric
element comprising a thermoelectric semiconductor; B) an electrode
connecting the first and second thermoelectric elements; C) at
least a first and a second joining layer, the first joining layer
positioned between the first thermoelectric element and the
electrode and the second joining layer positioned between the
second thermoelectric element and the electrode; and D) at least a
first and a second anti-oxidation layer, the first anti-oxidation
layer positioned between the first thermoelectric element and the
first joining layer, and the second anti-oxidation layer positioned
between the second thermoelectric element and the second joining
layer, wherein the first and second anti-oxidation layer
independently comprise one or more selected from the group
consisting of the following i) to iv): i) an alloy comprising
molybdenum; and one or more metal selected from the group
consisting of tungsten, cobalt, titanium, zirconium, and tantalum,
ii) an oxide of the alloy of i), iii) a nitride of the alloy of i),
and iv) an oxynitride of the alloy of i).
2. The thermoelectric module according to claim 1, wherein a
thickness of the first and second anti-oxidation layers is 0.1 to
200 .mu.m.
3. The thermoelectric module according to claim 1, wherein the
first and second anti-oxidation layer independently comprise at
least one alloy of i) selected from the group consisting of: an
alloy comprising molybdenum and titanium, an alloy comprising
molybdenum and tungsten, an alloy comprising molybdenum and
zirconium, an alloy comprising molybdenum and tantalum, an alloy
comprising molybdenum, titanium and tantalum, an alloy comprising
molybdenum, titanium and cobalt, and an alloy comprising
molybdenum, cobalt and tungsten.
4. The thermoelectric module according to claim 3, wherein the
first and second anti-oxidation layers comprise an alloy comprising
molybdenum and titanium.
5. The thermoelectric module according to claim 4, wherein the
alloy comprises molybdenum and titanium at an atomic ratio of 1:9
to 9:1.
6. The thermoelectric module according to claim 1, wherein the
first and second anti-oxidation layer independently comprise a
nitride of an alloy comprising molybdenum and titanium (MoTiN), or
an oxynitride of an alloy comprising molybdenum and titanium
(MoTiON).
7. The thermoelectric module according to claim 1, wherein the
first and second anti-oxidation layer are each a sputtered layer, a
vapor-deposited layer, an ion-plated layer, an electroplated layer,
or a sintered layer.
8. The thermoelectric module according to claim 1, wherein the
first and second anti-oxidation layer are each formed by direct
contact to ato the first and second thermoelectric element,
respectively.
9. The thermoelectric module according to claim 1, wherein the
first and second joining layer are each a soldered metal layer or
sintered metal layer.
10. The thermoelectric module according to claim 9, wherein the
first and second joining layer are each the sintered metal layer,
which comprises one or more first metal selected from the group
consisting of nickel (Ni), copper (Cu), iron (Fe), and silver (Ag);
and one or more second metal selected from the group consisting of
tin (Sn), zinc (Zn), bismuth (Bi) and indium (In).
11. The thermoelectric module according to claim 1, wherein the
thermoelectric semiconductor comprises a Co--Sb-based
thermoelectric semiconductor, or a Bi--Te-based thermoelectric
semiconductor.
Description
CROSS-REFERENCE TO RELATED APPLICATION(S)
[0001] This application claims the benefit of Korean Patent
Application No. 10-2017-0076058 filed on Jun. 15, 2017 with the
Korean Intellectual Property Office, the disclosures of which are
herein incorporated by reference in their entirety.
TECHNICAL FIELD
[0002] The present invention relates to a thermoelectric module
that has excellent thermal, electric properties, can prevent the
deformation of a thermoelectric element even under a high
temperature condition, and can be stably operated.
BACKGROUND ART
[0003] If there is a temperature difference between both ends of
solid material, a difference in the concentration of heat-dependent
carriers (electrons or holes) is generated, which is exhibited as
an electrical phenomenon of thermos-electromotive force, namely, a
thermoelectric effect. The thermoelectric effect means reversible
and direct energy conversion between temperature difference and
electricity and voltage.
[0004] Such a thermoelectric effect may be divided into
thermoelectric generation that generates electric energy, and
thermoelectric cooling/heating that induces temperature difference
of both ends by the supply of electricity, to the contrary.
[0005] Thermoelectric material exhibiting a thermoelectric effect,
i.e., thermoelectric semiconductor has advantages in that it is
environmentally-friendly and is sustainable in the processes of
generation and cooling, and thus, a lot of studies thereon are
being progressed. Furthermore, it can directly produce electric
powder in industrial waste heat, automobile waste heat, etc., and
is useful for improvement in fuel efficiency and CO.sub.2
reduction, etc., and thus, there is increasing attentions on the
thermoelectric material.
[0006] The basic unit of a thermoelectric module is one pair of p-n
thermoelectric elements consisting of a p-type thermoelectric
element (TE) where current flows by hole carriers, and an n-type
thermoelectric element where current flows by electrons. And, such
a thermoelectric module may include an electrode that connects
between the p-type thermoelectric element and n-type thermoelectric
element.
[0007] Such a thermoelectric module, although different according
to the kind of thermoelectric material used, is used to convert
heat energy into electric energy, generally at a temperature region
of about 250.degree. C. or more, or about 300.degree. C. or more,
and particularly, in case recently frequently used antimony-based
thermoelectric material is used, the thermoelectric module is
operated under a high temperature condition of about 500.degree. C.
or more.
[0008] However, under such temperature conditions, elements
included in a joining layer for connecting thermoelectric elements
and an electrode may be diffused toward the thermoelectric element,
or oxidation or thermal deformation may be generated on the surface
of the thermoelectric element, thus making the operation
difficult.
[0009] Therefore, there is a demand for the development of a
thermoelectric module that can be stably operated even at a high
temperature of about 300.degree. C. or more, preferably about
500.degree. C. or more, and has excellent thermal, electric
properties.
DETAILED DESCRIPTION OF THE INVENTION
Technical Problem
[0010] It is an object of the present invention to provide a
thermoelectric module that has excellent thermal, electric
properties, can prevent oxidation or thermal deformation of a
thermoelectric element, and thus, can realize high long-term
reliability.
Technical Solution
[0011] The present invention provides a thermoelectric module
comprising
[0012] A) plural thermoelectric elements comprising thermoelectric
semiconductor;
[0013] B) an electrode for connecting between the plural
thermoelectric elements;
[0014] C) a joining layer for joining the thermoelectric element
and electrode, positioned between each thermoelectric element and
electrode; and
[0015] D) an anti-oxidation layer positioned between the
thermoelectric element and the joining layer,
[0016] wherein the anti-oxidation layer includes one or more
compounds selected from the group consisting of the following i) to
iv):
[0017] i) alloy including molybdenum (Mo); and one or more metals
selected from the group consisting of tungsten (W), cobalt (Co),
titanium (Ti), zirconium (Zr), and tantalum (Ta),
[0018] ii) oxide of the alloy,
[0019] iii) nitride of the alloy, and
[0020] iv) oxynitride of the alloy.
Advantageous Effect
[0021] According to the present invention, a thermoelectric module
that can prevent thermal diffusion of the material of a joining
layer, can prevent oxidation and deformation of thermoelectric
elements under a high temperature environment, and exhibits
improved operation stability due to excellent adhesion of
thermoelectric elements can be provided, by comprising an
anti-oxidation layer having excellent thermal, electric properties
between the thermoelectric elements and joining layer,
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] FIG. 1 is a schematic view showing the cross section of a
thermoelectric module according to one embodiment of the present
invention.
[0023] FIG. 2A and FIG. 2B are respectively, images observing the
cross sections of thermoelectric elements having anti-oxidation
layers according to Examples 2 and 3 with a transmission electron
microscope (TEM), FIG. 2C and FIG. 2D are images observing the
cross section of a thermoelectric element having a multi-layered
anti-oxidation layer according to Comparative Example 1, at
different locations, with a transmission electron microscope (TEM),
and FIG. 2E is an image observing the cross section of a
thermoelectric element having a multi-layered anti-oxidation layer
according to Comparative Example 2, with a TEM (the measurement
magnification of FIGS. 2A to 2C: respectively .times.40000, the
measurement magnification of FIG. 2D: .times.57000, the measurement
magnification of FIG. 2E: .times.20000).
[0024] FIG. 3A and FIG. 3B are respectively, an image of elementary
analysis of the cross sections of thermoelectric elements having
anti-oxidation layers according to Examples 2 and 3, through a
transmission electron microscope (TEM), and FIG. 3C and FIG. 3D are
respectively, an image of elementary analysis of the cross sections
of thermoelectric elements having multi-layered anti-oxidation
layers according to Comparative Examples 1 and 2, through a TEM
(the measurement magnification of FIG. 3A and FIG. 3B: respectively
.times.28500, the measurement magnification of FIG. 3C:
.times.57000, the measurement magnification of FIG. 3D:
.times.10000).
TABLE-US-00001 [0025]<Explanation of symbols> 100:
thermoelectric element 200: electrode 300: joining layer 400:
anti-oxidation layer
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0026] As used herein, terms "a first", "a second" and the like are
used to explain various constructional elements, and they are used
only to distinguish one constructional element from other
constructional elements.
[0027] The terms used herein are only to explain specific
embodiments, and are not intended to limit the present invention. A
singular expression includes a plural expression thereof, unless it
is expressly stated or obvious from the context that such is not
intended. As used herein, the terms "comprise" or "have", etc. are
intended to designate the existence of practiced characteristic,
number, step, constructional element or combinations thereof, and
they are not intended to preclude the possibility of existence or
addition of one or more other characteristics, numbers, steps,
constructional elements or combinations thereof.
[0028] And, in case it is stated that each constructional element
is formed "on" or "above" each construction element, it means that
each constructional element is formed directly on each
constructional element, or that other constructional elements may
be additionally formed between the layers or on the object or
substrate.
[0029] Although various modifications can be made to the present
invention and the present invention may have various forms,
specific examples will be illustrated and explained in detail
below. However, it should be understood that these are not intended
to limit the present invention to specific disclosure, and that the
present invention includes all the modifications, equivalents or
replacements thereof without departing from the spirit and
technical scope of the invention.
[0030] A thermoelectric module according to one embodiment of the
present invention comprises:
[0031] A) plural thermoelectric elements comprising thermoelectric
semiconductor;
[0032] B) an electrode for connecting between the plural
thermoelectric elements;
[0033] C) a joining layer for joining the thermoelectric element
and electrode, positioned between each thermoelectric element and
electrode; and
[0034] D) an anti-oxidation layer positioned between the
thermoelectric element and the joining layer,
[0035] wherein the anti-oxidation layer includes one or more
compounds selected from the group consisting of the following i) to
iv):
[0036] i) alloy including molybdenum; and one or more metals
selected from the group consisting of tungsten (W), cobalt (Co),
titanium (Ti), zirconium (Zr), and tantalum (Ta),
[0037] ii) oxide of the alloy,
[0038] iii) nitride of the alloy, and
[0039] iv) oxynitride of the alloy.
[0040] In general, a module of thermoelectric conversion elements
that generates electricity using a temperature difference is used
under an environment having a large temperature difference between
a high temperature region and a low temperature region so as to
obtain high efficiency, and it is operated at a temperature region
of about 200.degree. C. to 300.degree. C., or about 500.degree. C.
to 600.degree. C. according to the element. Under such a
temperature condition, the material of a joining layer that joins a
thermoelectric element and an electrode is diffused, and is
inflowed into a thermoelectric element, or an oxidation reaction
occurs on the surface of a thermoelectric element, thus causing
deformation of the element.
[0041] However, since the thermoelectric module according to one
embodiment of the present invention has a anti-oxidation layer,
even if exposed to a high temperature, high pressure environment in
the joining process during the manufacture of a thermoelectric
module or in the operation step after manufacture, the diffusion
and inflow of the elements of the joining layer into the
thermoelectric element, or oxidation or thermal deformation of the
thermoelectric element under a high temperature environment may be
prevented. Thus, the thermoelectric module according to one
embodiment of the present invention may have excellent thermal,
electric properties, and realize a stable joining force between the
thermoelectric element and electrode even at a high temperature,
and thus, has excellent stability.
[0042] And, since the anti-oxidation layer consisting of alloy,
oxide of alloy, nitride of alloy, and/or oxynitride of alloy has
high hardness due to ceramic material, it can increase mechanical
stability of the element joining at the interface of the
thermoelectric element and the joining layer.
[0043] FIG. 1 is a schematic view showing the cross section of the
thermoelectric module according to one embodiment of the present
invention. FIG. 1 is no more than one example of the present
invention and the present invention is not limited thereto.
[0044] Referring to FIG. 1, the thermoelectric module according one
embodiment of the present invention comprises
[0045] A) plural thermoelectric elements (100) comprising
thermoelectric semiconductor;
[0046] B) an electrode (200) for connecting between the plural
thermoelectric elements (100);
[0047] C) a joining layer (300) for joining the thermoelectric
element (100) and electrode (200), positioned between each
thermoelectric element (100) and electrode (200); and
[0048] D) an anti-oxidation layer (400) positioned between the
thermoelectric element (100) and the joining layer (300), for
preventing thermal diffusion of the material of the joining layer,
and oxidation and deformation of the thermoelectric element under a
high temperature environment.
[0049] Specifically, in the thermoelectric module according to one
embodiment of the present invention, the anti-oxidation layer (400)
may be positioned in direct contact with the thermoelectric
elements, between the thermoelectric elements (100) and the joining
layer (300), and on the upper/lower sides of the thermoelectric
elements.
[0050] Since the anti-oxidation layer is formed between the
thermoelectric elements and the joining layer, when exposed to a
high temperature condition, counter diffusion of materials at the
interface of the thermoelectric elements and the joining layer may
be prevented, and the occurrence of an oxidation reaction due to a
high temperature may be prevented on the surface of the
thermoelectric element.
[0051] And, the anti-oxidation layer (400) may be formed on at
least one side of the thermoelectric elements, which does not
contact the joining layer, as well as between the thermoelectric
elements and the joining layer. In this case, by preventing the
occurrence of an oxidation reaction and deformation on the side of
the thermoelectric elements at a high temperature, high temperature
stability of the thermoelectric element may be further
improved.
[0052] Specifically, in the thermoelectric module according to one
embodiment of the present invention, the anti-oxidation layer (400)
may include one or more of: i) alloy including Mo, and one or more
metals selected from the group consisting of W, Co, Ti, Zr and Ta,
ii) oxide of the alloy; nitride of the alloy; and iv) oxynitride of
the alloy.
[0053] Mo may exhibit more excellent effect for heat diffusion
during the formation of an anti-oxidation layer, compared to other
transition metals, and thus, can improve the performance of a
thermoelectric element.
[0054] Since the anti-oxidation layer in the thermoelectric module
according to one embodiment of the invention includes Mo, and one
or more metals selected from the group consisting of W, Co, Ti, Zr
and Ta, in the form of an alloy, oxide, nitride or oxynitride, it
can compensate the problems of decrease in adhesion force, and the
like, which may be generated in case a transition metal such as Mo
is included alone, thus exhibiting more excellent anti-oxidation
effect, and it can stably maintain the shape of the layer even at a
high temperature, thus effectively preventing the deformation of a
thermoelectric element. Specifically, in the total transition
metals constituting the anti-oxidation layer, Mo may be included in
the amount of 10 to 90 atom %, more specifically, in the amount of
30 to 85 atom %.
[0055] More specifically, in case the anti-oxidation layer (400)
includes an alloy component of molybdenum and one or more metals
selected from the above described metal elements, Mo--Ti-based
alloy, Mo--W-based alloy, Mo--Zr-based alloy, Mo--Ta-based alloy,
Mo--Ti--Ta-based alloy, Mo--Ti--Co-based alloy, or Mo--Co--W-based
alloy, and the like may be mentioned, and among them, Mo--Ti-based
alloy that has excellent adhesive force with an element, and can
exhibit excellent anti-oxidation effect, may be preferably
included. In this case, based on the total weight of the
anti-oxidation layer, the contents of Mo and Ti may be about 90 wt
% or more, preferably about 95 wt % or more, or about 99 to about
100 wt %. And, within the above described content range, the
Mo--Ti-based alloy may comprise Mo and Ti at the atomic ratio of
1:9 to 9:1, more specifically, at the atomic ratio of 5:1 to 3:7.
Even more specifically, the alloy may comprise Mo and Ti at the
atomic ratio of 4:1 to 1:1, and furthermore, when the alloy
comprises Mo in an excessive amount compared to Ti, at the atomic
ratio of 7:3 to 6:4, diffusion preventing property and durability
can be exhibited as well as excellent high temperature
stability.
[0056] And, in case the anti-oxidation layer (400) includes the
compounds of the alloy, it may include the nitride, oxide or
oxynitride of the above described alloys. Specifically, as the
nitride, nitride including Mo--Ti (MoTiN) or oxynitride including
Mo--Ti (MoTiON), nitride including Mo--Ta (MoTaN), and the like; as
the oxide, oxide including Mo--Cu--W, and the like; and as the
oxynitride, oxynitride including Mo--Ti (MoTiON), and the like may
be mentioned, and mixtures thereof may be included. Among them, it
may be preferable that nitride including Mo--Ti (MoTiN) or
oxynitride including Mo--Ti (MoTiON) is included, and oxynitride
including Mo--Ti, which not only has excellent heat stability, but
also exhibits excellent adhesion property, may be more preferable.
Here, the Mo and Ti may be included in the nitride and oxynitride
at the atomic ratio described above in the Mo--Ti-based alloy. And,
in this case, the anti-oxidation layer may include the compounds of
alloy described above, in the content of about 90 wt % or more,
preferably about 95 wt % or more, or about 99 wt % or more, based
on the total weight of the anti-oxidation layer.
[0057] The thickness of the anti-oxidation layer (400) may be about
0.1 .mu.m to about 200 .mu.m, more specifically about 0.2 .mu.m to
about 100 .mu.m. When the anti-oxidation layer is formed with the
above thickness range, it may exhibit excellent adhesive force and
anti-oxidation effect without deterioration of the shape and
performance of a thermoelectric element.
[0058] Such an anti-oxidation layer (400) may be formed in direct
contact with the thermoelectric element, in the form of a sputtered
layer, a vapor-deposited layer, an ion-plated layer, an
electroplated layer, or a sintered layer. For example, in case
alloy is used as the anti-oxidation layer, it may be applied in the
form of a sputtered layer, an electroplated layer, or a sintered
layer, and in case the oxide, nitride or oxynitride of alloy is
used as the anti-oxidation layer, it may be applied in the form of
deposited layer such as a sputtered layer, a vapor-deposited layer,
or an ion-plated layer, and the like.
[0059] In case alloy is applied in the form of a sintered layer,
each metal component included in corresponding alloy may be
prepared in the form of powder, and a paste composition is prepared
by mixing them with a binder or a solvent, and the like, and then,
it may be coated on the surface of a thermoelectric element, and
sintered.
[0060] In case a sputtering method is applied, first, an oxidation
layer may be removed on the surface to be deposited by plasma
treatment, and sputtering may be progressed at about 0.1 to about
50 W/cm.sup.2, using sputtering equipment. The deposition time may
vary according to the surface to be deposited or elements
deposited, but for example, it may be progressed for about 1 to
about 60 minutes, and the operation pressure may be about 0.1 to
about 50 mTorr. And, in case the anti-oxidation layer includes
nitride of alloy, sputtering may be conducted while introducing
nitrogen. Such a sputtering method may be usefully applied,
particularly in case oxide, nitride or oxynitride of alloy is
formed with a thickness of about 100 .mu.m or less.
[0061] And, in case an ion plating method is applied, ion plating
equipment may be preheated under a vacuum state, and glow discharge
may be progressed, and then, remaining gas may be ionized in a
vacuum, thus progressing deposition by ion bombardment. For
example, it is preferable that the vacuum state is maintained at a
level of about 1.times.10{circumflex over ( )}(-4) to about
1.times.10{circumflex over ( )}(-5) mbar, and after preheating to
about 300.degree. C., glow discharge may be progressed by Ar ions,
and the like, at a level of about 50 W to 70 W, for about 10
minutes to about 30 minutes. It may be preferable that the ion
bombardment is progressed at the level of about 1 to about 5 kW for
about 30 minutes or less, and deposition is progressed at the level
of about 1 to about 5 kW for about 30 minutes to about 3 hours.
Such an ion plating method may be usefully applied, particularly in
case the deposition thickness is about 100 .mu.m or less.
[0062] Besides, specific processes of each method for the
deposition of metals or metal compounds are not specifically
limited as long as they are commonly used in the field to which the
present invention pertains.
[0063] Such an anti-oxidation layer (400), even when exposed to a
high temperature condition, specifically, about 200.degree. C. to
about 600.degree. C. for about 72 hours or more, or about 100 hours
or more, it can prevent a surface oxidation reaction of a
thermoelectric element without generating leakage of metal
elements, thus increasing high temperature stability.
[0064] Meanwhile, in the thermoelectric module according to one
embodiment of the present invention, the thermoelectric elements
(100) are divided into a p-type thermoelectric element and an
n-type thermoelectric element according to the function, and one
pair of alternating p-n thermoelectric elements become a basic
unit.
[0065] The thermoelectric element (100) comprises thermoelectric
semiconductor. The kind of the thermoelectric semiconductor is not
specifically limited, and specifically, it may include Bi--Te,
skutterudite, silicide, Half heusler, Co--Sb, PbTe, Si, and
SiGe-based thermoelectric semiconductors, etc. Among them,
Bi--Te-based or Co--Sb-based thermoelectric semiconductor can
exhibit more excellent improvement effect when used together with
the above described anti-oxidation layer, and thus, is
preferable.
[0066] And in the thermoelectric module according to one embodiment
of the present invention, the electrodes (200) are for the
connection between the plural thermoelectric elements,
specifically, for the electrical series connection between a p-type
thermoelectric element and an n-type thermoelectric element, and
they are positioned on the upper side and the lower side,
respectively, and may comprise conductive material. The conductive
material is not specifically limited, and specifically, it may
include Cu, Cu--Mo, Ag, Au or Pt, etc., and a mixture thereof may
be used. Among them, the electrode may comprise Cu or Ag having
high electric conductivity and thermal conductivity.
[0067] And, in the thermoelectric module according to one
embodiment of the present invention, a joining layer (300) for
joining the thermoelectric element and electrode is positioned
between each thermoelectric element (100) and electrode (200).
[0068] The joining layer (300) may be a soldered metal layer, or a
sintered metal layer. Specifically, the joining layer for joining a
thermoelectric element and an electrode may be formed by coating a
metal paste for the formation of a joining layer on each barrier
layer, and positioning an electrode thereon, and then, progressing
soldering or sintering. More specifically, it may be formed by a
soldering method wherein metal is molten and joined using a solder
paste such as a Sn-based solder paste or a Pb-based solder paste,
and the like, or it may be formed by positioning a metal paste for
the formation of a joining layer prepared by mixing one or more
metal powders selected from nickel (Ni), copper (Cu), ferrous (Fe),
silver (Ag), or tin (Sn), and the like, selectively with a binder,
a dispersant and a solvent, between a thermoelectric element and an
electrode, and progressing sintering.
[0069] When the joining layer is formed by transient liquid phase
sintering (TLPS), an intermetallic compound consisting of different
kinds of metals may be produced, and it may be sintered to form a
joining layer.
[0070] Particularly, even if a metal paste having a similar
composition is used, a sintered density may vary according to the
conditions of metal dispersion and mixing, and as the uniform
dispersion and mixing of metal particles are achieved in the metal
paste, an intermetallic compound with a high sintered density may
be formed, and the sintered joining layer may have excellent
joining property.
[0071] And, in case the joining layer (300) is formed of a sintered
metal layer, the sintered metal layer may include one or more first
metals selected from the group consisting of Ni, Cu, Fe, and Ag;
and one or more second metals selected from the group consisting of
tin (Sn), zinc (Zn), bismuth (Bi) and indium (In), and more
specifically, it may include the first metal and the second metal
at a weight ratio of 95:5 to 70:30.
[0072] Specifically, the first metal is a high melting point metal
having a melting point of about 900.degree. C. or more, the second
metal is a low melting point metal having a melting point of about
500.degree. C. or less, and the joining layer included in the
thermoelectric module of the present invention may be formed by the
sintering of a metal paste including each metal powder. Namely,
since the metal paste for the formation of a joining layer include
both high melting point metal powder and low melting point metal
powder, the joining layer may be formed according to the sintering
of an intermetallic compound even at a relatively low
temperature.
[0073] More specifically, under conditions above the melting point
of the second powder, the flowability of the second metal becomes
smooth, and thus, diffusivities of the first and the second metals
significantly increase, thereby facilitating the formation of an
intermetallic compound by the intermetallic reaction between both
metal powders, and a sintering reaction. The intermetalic compound
joining layer produced through the process may have high electric
conductivity and thermal conductivity due to the properties of the
first and the second metals, and have high heat resistance due to
the property of the first metal, thus performing a function as a
joining layer for stably joining a thermoelectric element and an
electrode even at a high temperature.
[0074] And, the joining layer (300) may consist of a single phase
of the intermetallic compound produced by the sintering of the
paste, or a mixed phase of the intermetallic compound and the first
and the second metals, and the rate of the single phase of the
intermetallic compound in the joining layer may be 90 wt % or
more.
[0075] The first metal and the second metal may be included at a
weight ratio of about 99:1 to about 50:50, preferably about 99:1 to
about 60:40 or about 95:5 to about 70:30.
[0076] And, the thickness of the joining layer (300) may be about
0.05 .mu.m to about 200 .mu.m. If the thickness is thinner than the
above range, it may be difficult to overcome a height deviation of
thermoelectric legs, and if it is thicker than the above range,
problems may be generated in terms of conductivity and alignment of
legs.
[0077] And, the joining layer (300) may be a porous sintered
joining layer formed by sintering of the above described metal
elements, and specifically, the porosity may be preferably about
10% or less, or about 0.01 to about 10%, or about 0.1 to 5%.
[0078] Here, the porosity is a rate occupied by pores to the total
area of the joining layer, measured by observing the cross section
of the joining layer, using equipment such as SEM, TEM, and the
like. Since the joining layer exhibits low porosity of about 10% or
less, excellent mechanical joining force and high temperature
reliability may be expected.
[0079] The joining layer (300) may have a joining strength of about
1 MPa or more, preferably about 1 MPa to about 20 MPa, or about 10
MPa to about 20 MPa.
[0080] Here, the joining strength is a shear strength at the moment
when an element is fractured at an electrode by the application of
a shear force to a thermoelectric element, measured using a
bondtester (Nordson DAGE 4000).
[0081] And, the thermoelectric module according to one embodiment
of the present invention may further comprise a structure
corresponding to the structure shown in FIG. 1, specifically, an
anti-oxidation layer (not shown), a joining layer (not shown) and
an electrode (200), formed on a side opposite to the side of the
thermoelectric element (100) on which the anti-oxidation layer
(400) is formed.
[0082] Meanwhile, the thermoelectric module having the above
described structure may be prepared by respectively forming
anti-oxidation layers on the upper side and the lower side of the
thermoelectric element (step 1); and positioning a metal paste for
the formation of a joining layer on each anti-oxidation layer, and
then, contacting an electrode, or positioning a metal paste for the
formation of a joining layer on an electrode, and then, contacting
the anti-oxidation layers to join (step 2). Thus, according to yet
another embodiment of the present invention, a method for preparing
the above described thermoelectric module is provided.
[0083] Specifically, the step 1 is a step of forming an
anti-oxidation layer on a thermoelectric element.
[0084] The step of forming an anti-oxidation layer may be conducted
by respectively forming anti-oxidation layers on the upper side and
the lower side of a thermoelectric element, by PVD (physical vapor
deposition) such as sputtering, evaporation or ion plating;
plating; or sintering, and the like, using Mo metal powder and one
or more metal powders selected from the group consisting of W, Co,
Ti, Zr and Ta, or using alloy including Mo and one or more metals
selected from the group consisting of W, Co, Ti, Zr and Ta.
[0085] The thermoelectric element is as explained above. However,
in order to form the anti-oxidation layer, the thermoelectric
element may be subjected to pre-treatment for controlling the
impurities and the oxidation film formed on the surface of the
thermoelectric. Specifically, the pre-treatment may be conducted by
surface sputtering with argon ion.
[0086] Meanwhile, the metal paste for the formation of a joining
layer may comprise one or more first metal powders selected from
the group consisting of Ni, Cu, Fe and Ag; and one or more second
metal powders selected from the group consisting of Sn, Zn, Bi and
In, and selectively, it may further comprise a binder, a
dispersant, and a solvent.
[0087] Here, the first metal and the second metal may be included
at a weight ratio of about 99:1 to about 50:50, preferably about
99:1 to about 60:40 or about 95:5 to about 70:30.
[0088] And, the first metal and the second metal may be in the form
of powders having an average particle diameter of 10 .mu.m or less,
preferably 0.3 to 3 .mu.m. If the average particle diameter of the
first and the second metal powders are within the above ranges, the
oxidation degree of metal powders may be lowered, and a reaction
for the formation of an intermetallic compound and a sintering
degree may be improved by an appropriate specific surface area.
[0089] The dispersant performs a function for improving the
dispersibility of the first and the second metal powders in a
solvent, in a metal paste without binder resin, and it may exist
while being adsorbed on the surfaces of the first metal powder and
the second metal powder.
[0090] Such a dispersant may be aliphatic acid having 12 to 20
carbon atoms, or an alkali metal salt or an alkali earth metal salt
thereof, more specifically, stearic acid, oleic acid, oleylamine,
palmitic acid, dodecanoic acid, isostearic acid, sodium stearate,
or sodium dodecanoate, and the like.
[0091] And, the dispersant may be included in the content of about
0.1 to about 5 wt %, preferably about 0.5 to about 1.5 wt %, based
on the total weight of the metal paste.
[0092] The solvent affords wettability to the metal paste, and
functions as a vehicle carrying the first, second metal powders,
and particularly, it can conduct a drying process and a joining
process at a low temperature less than 350.degree. C. because it
has a boiling point of 150 to 350.degree. C.
[0093] And, the solvent may include one selected from the group
consisting of alcohols, carbonates, acetates, and polyols, and more
specifically, it may be dodecanol, propylene carbonate, diethylene
glycol mono ethyl acetate, tetrahydrofurfuryl alcohol, terpineol,
dihydroterpineol, ethylene glycol, glycerin, tridecanol or
isotridecanol, and the like.
[0094] And, the metal paste may further comprise sintering-inducing
additives.
[0095] The sintering-inducing additives perform a function for
reducing an oxidation layer on the metal surface in the paste so as
to induce and facilitate the production and sintering of an
intermetallic compound, inducing the initiation of a synthesis
reaction, or assisting in the thermal decomposition of a
carbon-based dispersant, and a metal paste comprising the same may
form a denser joining layer even under the same joining
conditions.
[0096] And, the sintering-inducing additives may be included in the
content of about 2 to about 20 wt %, preferably about 5 to about 10
wt %, based on the total weight of the metal paste.
[0097] As a method of coating the metal paste on an electrode,
various methods for coating a solder paste, and the like, commonly
used in the technical field to which the present invention
pertains, may be used, and for example, it may be preferable that a
coating region is exactly controlled by stencil printing, and the
like.
[0098] And, the joining step may comprise pressurized sintering at
a temperature of about 200.degree. C. to about 400.degree. C. and a
pressure of about 0.1 MPa to about 200 MPa. Here, the sintering
step may be a pressurized sintering method well known to a person
having ordinary knowledge in the art, the pressure and the
temperature are not necessarily limited to the above ranges, and
specifically, it may be preferably conducted at a temperature above
the melting point of metal powder selected.
[0099] Hereinafter, the actions and the effects of the invention
will be explained in detail through specific examples of the
invention. However, these examples are presented only as the
illustrations of the invention, and the scope of the right of the
invention is not determined thereby,
EXAMPLE
Example 1
[0100] (1) 78.0 wt % of Ag powder (average particle diameter: 300
nm), 5.0 wt % of Sn powder (average particle diameter: 1 .mu.m),
2.1 wt % of methyl methacrylate (MMA) as a binder, 0.5 wt % of
sodium stearate as an additive, and the remaining amount of a
solvent of isophorone were mixed to prepare a metal paste (100 wt
%). On a DBC (Direct Bonded Copper) substrate capable of
functioning as an electrode connecting thermoelectric elements, the
metal paste prepared in (1) was coated by stencil printing, and
dried at 110.degree. C. for 10 minutes.
[0101] (2) A wafer was prepared using thermoelectric material of
P-type Bi.sub.0.5Sb.sub.1.5Te.sub.3_N-type
Bi.sub.2Te.sub.2.7Se.sub.0.3 composition, which is Bi--Te-based
thermoelectric semiconductor, and a Mo--Ti alloy layer was
deposited thereon as an anti-oxidation layer. At this time, the
deposition was progressed using sputtering equipment, under
conditions of 4.4 W/cm.sup.2 and a process pressure of 30 mTorr,
and the Mo--Ti alloy in the alloy layer has the atomic ratio of
Mo:Ti of 62:38.
[0102] Thereafter, it was diced to a size of 3.times.3 mm.sup.2 to
prepare thermoelectric legs.
[0103] (3) The DBC substrate on which the metal paste was coated
and dried, and the thermoelectric leg on which the anti-oxidation
layer was formed were pressurized (5 MPa) at 300.degree. C. for 10
minutes, while the anti-oxidation layer and the metal paste-coated
side were made to be in contact, thus manufacturing a
thermoelectric module by pressurized sintering and joining.
[0104] The size of the high temperature region substrate of the
manufactured thermoelectric module was 30.times.30 mm.sup.2, the
size of the low temperature region substrate was 30.times.32
mm.sup.2, and the size of the element was 3.times.3.times.2
mm.sup.3, and the thermoelectric module includes 32 pairs.
[0105] The thickness of the joining layer was confirmed to be 100
nm, and the thickness of the anti-oxidation layer was confirmed to
be about 400 nm.
Example 2
[0106] A thermoelectric module was manufactured by deposition of a
Mo--Ti alloy layer by the same method as Example 1, except that a
wafer was prepared using thermoelectric material of
In.sub.0.2Co.sub.4Sb.sub.12, which is skutterudite (Co--Sb-based)
thermoelectric semiconductor.
[0107] The thickness of the anti-oxidation layer was confirmed to
be about 400 nm.
Example 3
[0108] A thermoelectric module was manufactured by the same method
as Example 1, except that a wafer was prepared using thermoelectric
material of In.sub.0.2Co.sub.4Sb.sub.12, which is skutterudite
(Co--Sb-based) thermoelectric semiconductor, and an anti-oxidation
layer was formed by deposition of MoTiON (Mo:Ti=50:50 atomic
ratio), using MoTi alloy (Mo:Ti=50:50 atomic ratio) target and
sputtering equipment, under conditions of 4.4 W/cm.sup.2, a process
pressure of 6 mTorr, 3 sccm, and nitrogen 20 sccm.
[0109] The thickness of the anti-oxidation layer was confirmed to
be about 400 nm.
Comparative Example 1
[0110] An anti-oxidation layer of a four-layer structure was formed
by preparing a wafer using thermoelectric material of
In.sub.0.2Co.sub.4Sb.sub.12, which is skutterudite (Co--Sb-based)
thermoelectric semiconductor, and sequentially depositing a
titanium layer, a molybdenum layer, a titanium layer and a
molybdenum layer on the thermoelectric semiconductor layer.
Wherein, the deposition of each metal layer was progressed using
sputtering equipment, under conditions of 2-3 W/cm.sup.2, and a
process pressure of 0.5-3 mTorr, and it was conducted such that the
thickness of each metal layer in the anti-oxidation layer was
identical. Besides, it was conducted by the same method as Example
1, to manufacture a thermoelectric module.
[0111] The thickness of the anti-oxidation layer was confirmed to
be about 270 nm.
Comparative Example 2
[0112] A thermoelectric module was prepared by the same method as
Comparative Example 1, except that the anti-oxidation layer of a
four-layer structure of a titanium layer/a molybdenum layer/a
titanium layer/a molybdenum layer was deposited and formed to a
thickness of about 400 nm in Comparative Example 1.
Experimental Example
[0113] In order to evaluate the influence of the formation of an
anti-oxidation layer on the heat stability of a thermoelectric
element, anti-oxidation layers were formed on thermoelectric
elements, respectively by the same methods as Examples 1 to 3, and
Comparative Examples 1 to 2.
[0114] Subsequently, the thermoelectric element on which the
anti-oxidation layer was formed was exposed to the temperature
condition described in the following Table 1 for 72 hours, to
evaluate whether or not the thermoelectric element or the
anti-oxidation layer was deformed.
[0115] Specifically, after the thermal evaluation, it was confirmed
whether or not the anti-oxidation layer was deformed and the
thermoelectric element was deformed, by observing the cross section
of the thermoelectric element with a transmission electron
microscope (TEM). And, it was confirmed whether or not a compound
peak was formed through X-ray diffraction (XRD) analysis, and
thereby, it was confirmed whether or not elements were inflowed.
The results are respectively shown in the following Table 1 and
FIGS. 2A to 3D.
[0116] FIG. 2A and FIG. 2B are respectively, the images observing
the cross sections of the thermoelectric elements on which the
anti-oxidation layers according to Examples 2 and 3 were formed,
with a transmission electron microscope (TEM) (measurement
magnification of FIG. 2A and FIG. 2B: respectively .times.40000),
and FIG. 2C and FIG. 2D are the images observing the cross section
of the thermoelectric element on which the multilayered
anti-oxidation layer according to Comparative Example 1 was formed,
at different locations, with a transmission electron microscope
(TEM) (measurement magnification of FIG. 2C: .times.40000.
measurement magnification of FIG. 2D: .times.57000). And, FIG. 2E
is the image observing the cross section of the thermoelectric
element on which the multilayered anti-oxidation layer according to
Comparative Example 2 was formed, with a transmission electron
microscope (TEM) (measurement magnification of FIG. 2E:
.times.20000)
[0117] And, FIG. 3A and FIG. 3B are respectively, the images of the
elementary analysis of the cross sections of the thermoelectric
elements on which the anti-oxidation layers according to Examples 2
and 3 were formed, through a transmission electron microscope (TEM)
(measurement magnifications of FIG. 3A and FIG. 3B: respectively,
.times.28500), and FIG. 3C and FIG. 3D are respectively, the images
of the elementary analysis of the cross sections of the
thermoelectric elements on which the multilayered anti-oxidation
layers according to Comparative Examples 1 and 2 were formed,
through a transmission electron microscope (TEM) (measurement
magnifications of FIG. 3C: .times.57000, measurement magnification
of FIG. 3D: respectively, .times.10000)
TABLE-US-00002 TABLE 1 Material of Exposure Deformation of
anti-oxidation thickness temperature time Deformation of
anti-oxidation layer (nm) (.degree. C.) (H) element layer Example 1
MoTi about 400 300 72 Not deformed Not deformed Example 2 MoTi
about 400 500 72 Not deformed Not deformed Example 3 MoTiON about
400 500 72 Not deformed Not deformed Comparative Ti/Mo/Ti/Mo about
270 500 72 Mo and Ti fracture Example 1 elements generated inflowed
Comparative Ti/Mo/Ti/Mo about 400 500 72 Mo and Ti fracture Example
2 elements generated inflowed
[0118] Referring to Table 1 and FIGS. 2A to 3D, it can be confirmed
that in the case of a thermoelectric element on which an
anti-oxidation layer is formed as in Examples 1 to 3 of the present
invention, even if exposed to a high temperature condition for a
long time, deformation of the anti-oxidation layer or the
thermoelectric element itself was not generated at all, and
particularly, the shape of the layer was maintained as it is.
[0119] To the contrary, it can be seen that in the case of a
thermoelectric element on which a multilayered anti-oxidation layer
is formed as in Comparative Examples 1 and 2, metal was molten
under a high temperature condition to generate fracture in the
middle of the anti-oxidation layer, and thus, a metal element was
leaked into the thermoelectric element, thus generating deformation
of the thermoelectric element. Particularly, referring to FIG. 3C
and FIG. 3D, it can be clearly confirmed that fracture was
generated in a molybdenum layer, and a titanium component was
eluted outside the layer and diffused toward the thermoelectric
element.
[0120] Referring to the above results, it can be seen that the
thermoelectric module according to the embodiments of the present
invention has very excellent high temperature stability, and thus,
can be stably operated for a long time, even under a high
temperature environment where a temperature difference between a
low temperature region and a high temperature region is increased
so as to increase the efficiency.
* * * * *