U.S. patent application number 16/429568 was filed with the patent office on 2019-09-19 for solar cell with borderless interdigitated contacts and method of making.
This patent application is currently assigned to International Business Machines Corporation. The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Joel P. De Souza, Harold John Hovel, Daniel Inns, Jeehwan Kim, Christian Lavoie, Devendra K. Sadana, Katherine L. Saenger, Davood Shahrjerdi, Zhen Zhang.
Application Number | 20190288146 16/429568 |
Document ID | / |
Family ID | 47141049 |
Filed Date | 2019-09-19 |
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United States Patent
Application |
20190288146 |
Kind Code |
A1 |
De Souza; Joel P. ; et
al. |
September 19, 2019 |
SOLAR CELL WITH BORDERLESS INTERDIGITATED CONTACTS AND METHOD OF
MAKING
Abstract
A solar cell having n-type and p-type interdigitated back
contacts (IBCs), which cover the entire back surface of the
absorber layer. The spatial separation of the IBCs is in a
direction perpendicular to the back surface, thus providing
borderless contacts having a zero-footprint separation. As the
contacts are on the back, photons incident on the cell's front
surface can be absorbed without any shadowing.
Inventors: |
De Souza; Joel P.; (Putnam
Valley, NY) ; Hovel; Harold John; (Katonah, NY)
; Inns; Daniel; (Miami, FL) ; Kim; Jeehwan;
(Cambridge, MA) ; Lavoie; Christian;
(Pleasentville, NY) ; Sadana; Devendra K.;
(Pleasentville, NY) ; Saenger; Katherine L.;
(Ossining, NY) ; Shahrjerdi; Davood; (Ossining,
NY) ; Zhang; Zhen; (Sollentuna, SE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Assignee: |
International Business Machines
Corporation
Armonk
NY
|
Family ID: |
47141049 |
Appl. No.: |
16/429568 |
Filed: |
June 3, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13103583 |
May 9, 2011 |
|
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16429568 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
Y02P 70/521 20151101;
H01L 31/022441 20130101; Y02P 70/50 20151101; H01L 31/1864
20130101; H01L 31/07 20130101; H01L 31/0682 20130101; H01L 31/1804
20130101; Y02E 10/547 20130101 |
International
Class: |
H01L 31/068 20060101
H01L031/068; H01L 31/18 20060101 H01L031/18; H01L 31/0224 20060101
H01L031/0224 |
Claims
1. A borderless interdigitated back contact solar cell comprising:
a lightly-doped absorber having a front surface and a back surface;
at least one of a first dopant type region and a first work
function region on said back surface; one or more trenches in said
back surface; sidewall spacers on trench sidewalls, said sidewall
spacers extending from the trench floors to said back surface; at
least one of a second dopant type region and a second work function
region on the trench floors between said sidewall spacers, the
second regions being horizontally self-aligned to the first region
by respective sidewalls spacers; and a dopant-segregated interface
of said first dopant type on said back surface between said
trenches and a dopant-segregated interface of said second dopant
type on the trench floors, each said dopant-segregated interface
tuning work function at the interface, wherein the at least one of
the first dopant type region and the first work function region and
the at least one of the second dopant type region and the second
work function region are at opposite ends of one of said sidewall
spacers, and separated vertically from each other, and self-aligned
with respect to each other, by said respective sidewalls
spacers.
2. The borderless interdigitated back contact solar cell according
to claim 1, further comprising a front surface layer having a
higher concentration of a dopant having the same doping type as the
lightly doped absorber.
3. The borderless interdigitated back solar cell according to claim
1, further comprising a first conductive contact region at the at
least one of the p-doped region and the high work function region
and a second conductive contact region at the at least one of the
n-doped region and the low work function region.
4. The borderless interdigitated back contact solar cell according
to claim 1, wherein the lightly doped absorber is monocrystalline
or polycrystalline.
5. The borderless interdigitated back contact solar cell according
to claim 1, wherein the lightly doped absorber is a material
selected from the group consisting of Si, Ge, and SiGe alloys.
6. The borderless interdigitated back contact solar cell according
to claim 1, wherein the lightly-doped absorber is n-doped.
7. The borderless interdigitated back contact solar cell according
to claim 1, wherein the lightly-doped absorber is p-doped.
8. The borderless interdigitated back contact solar cell according
to claim 1, wherein the at least one of the p-doped region and the
high work function region and the at least one of the n-doped
region and the low work function region are spaced-apart by a
distance of from about 1 micrometer to about 200 micrometers.
9. The borderless interdigitated back contact solar cell according
to claim 1, wherein the at least one of the p-doped region and the
high work function region and the at least one of the n-doped
region and the low work function region are spaced-apart by a
distance of from about 5 micrometers to about 50 micrometers.
10. The borderless interdigitated back contact solar cell according
to claim 1, wherein the at least one of the p-doped region and the
high work function region comprises the high work function
region.
11. The borderless interdigitated back contact solar cell according
to claim 10, wherein the high work function region provides a
potential difference having a magnitude of at least 0.2 volts at an
interface with the lightly-doped absorber.
12. The borderless interdigitated back contact solar cell according
to claim 10, wherein the high work function region is a
metal-containing material selected from the group consisting of
metal, metal silicide, and metal germanides, or mixtures or
multilayers thereof.
13. The borderless interdigitated back contact solar cell according
to claim 12, wherein the metal is selected from the group
consisting of nickel, platinum, nickel platinum, cobalt, titanium,
and tungsten.
14. The borderless interdigitated back contact solar cell according
to claim 1, wherein the at least one of a n-doped region and a low
work function region comprises the low work function.
15. The borderless interdigitated back contact solar cell according
to claim 14, wherein the low work function region provides a
potential difference having a magnitude of at least 0.2 volts at an
interface with the lightly-doped absorber.
16. The borderless interdigitated back contact solar cell according
to claim 14, wherein the low work function region is a
metal-containing material selected from the group consisting of
metal, metal silicide, and metal germanides, or mixtures or
multilayers thereof.
17. The borderless interdigitated back contact solar cell according
to claim 16, wherein the metal is selected from the group
consisting of nickel, platinum, nickel platinum, cobalt, titanium,
and tungsten.
18. The borderless interdigitated back contact solar cell according
to claim 1, wherein a dopant of the lightly-doped absorber is
selected from the group consisting of Al, As, B, Ga, In, P, and
Sb.
19. The borderless interdigitated back contact solar cell according
to claim 1, wherein an insulating sidewall spacer is disposed on
the sidewall.
20. The borderless interdigitated back contact solar cell according
to claim 19, wherein the insulating sidewall spacer is selected
from the group consisting of insulating oxides, insulating
nitrides, ceramics, and polymers, or mixtures or multilayers of
thereof.
21. The borderless interdigitated back contact solar cell according
to claim 20, wherein the insulating oxide is silicon oxide.
22. The borderless interdigitated back contact solar cell according
to claim 20, wherein the insulating nitride is silicon nitride.
23. The borderless interdigitated back contact solar cell according
to claim 1, further comprising at least one of a conductive
contact, a transparent conductive oxide layer, an antireflective
coatings, a surface texturing, and a surface passivation layer.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] The present invention is a divisional of U.S. patent
application Ser. No. 13/103,583 (Attorney Docket No.
YOR920100052US1), "SOLAR CELL WITH BORDERLESS INTERDIGITATED
CONTACTS AND METHOD OF MAKING" to Joel P. de Souza et al., filed
May 9, 2011, assigned to the assignee of the present invention and
incorporated herein by reference.
FIELD OF THE DISCLOSURE
[0002] The present disclosure relates to solar cells having
interdigitated back contacts (IBCs), which cover essentially the
entire back surface of a lightly-doped absorber such that the area
used for absorption of photons and charge-separation between
electrons and holes is maximized.
BACKGROUND
[0003] Recently, there has been renewed interest in solar cells as
alternative energy sources. To increase the efficiency of solar
cells, it is desirable to maximize the active area of a solar cell,
i.e., the area of the cell that absorbs light. However, design
constraints make it necessary to provide, for example, electrical
contacts to allow for the use of the electrical power generated by
the cell, or separators between p- and n-doped regions of the cell
to avoid rapid charge recombination of electron/hole pairs
generated by absorbed light.
[0004] These design constraints may limit the active area available
for light absorption, thereby lowering the actual cell efficiency
below the theoretical maximum photon-to-electron conversion
efficiency.
[0005] Inderdigitated back contacts (IBCs) allow to attach
electrical contacts to the back side, i.e., the side facing away
from the light source, which avoids shadowing losses that otherwise
take place in solar cells with electrical contacts on the front
side, i.e., the side facing the light source. Nevertheless,
traditional IBC solar cells contain an insulating region as a
separator between p- and n-doped regions of the cell to prevent
charge recombination. The insulating region, however, reduces the
amount of active area for photon absorption, and, consequentially,
the efficiency of the solar cell. Moreover, the insulating region,
also referred to as spacing or border, between interdigitated
contacts must further include a budget for misalignment because
contacts defined in different lithography levels may not be in
perfect alignment.
[0006] Further, solar cell designs utilizing n-doped and p-doped
regions that are interdigitated back contacts offer a number of
advantages in both solar cell efficiency and ease of processing.
IBCs can be advantageous to process in cases where only one side of
a quasi-planar absorber layer is accessible for contact formation
or in cases where having both contacts on the same side of the
absorber layer makes it easier to connect the adjacent solar cells
comprising a solar module. It would therefore be extremely
desirable to have a method to make interdigitated contacts that
allows the contact (or carrier collection) area to be maximized
while minimizing the potential for contact misalignment.
SUMMARY OF THE DISCLOSURE
[0007] In this disclosure, n-doped and p-doped regions of an IBC
solar cell are spaced apart not within a plane, but in a direction
perpendicular to the back surface of the solar cell. This geometry
allows maximization of the active area of the solar cell because no
separator region has to be provided within the plane of the active
area.
[0008] In a typical embodiment, a borderless interdigitated back
contact solar cell is provided with a lightly-doped absorber having
a front surface and a back surface; at least one of a p-doped
region and a high work function region disposed on the
lightly-doped absorber; and at least one of a n-doped region and a
low work function region disposed on the lightly-doped absorber;
wherein the at least one of the p-doped region and the high work
function region are provided in a recess of the back surface and
the at least one of the n-doped region and the low work function
region are provided at the back surface; or wherein the at least
one of the n-doped region and the low work function region are
provided in a recess of the back surface and the at least one of
the p-doped region and the high work function region are provided
at the back surface.
[0009] Further, a preferred method of forming a borderless
interdigitated back contact solar cell is disclosed, which
comprises providing a lightly-doped absorber having a front surface
and a back surface; providing at least one of a p-doped region and
a high work function region disposed on the lightly-doped absorber;
and providing at least one of a n-doped region and a low work
function region disposed on the lightly-doped absorber; wherein the
at least one of the p-doped region and the high work function
region are provided in a recess of the back surface and the at
least one of the n-doped region and the low work function region
are provided at the back surface; or wherein the at least one of
the n-doped region and the low work function region are provided in
a recess of the back surface and the at least one of the p-doped
region and the high work function region are provided at the back
surface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] FIG. 1 shows a sideview of an IBC solar cell of the related
art. A p-doped substrate 100 with high minority carrier lifetime is
provided with a silicon dioxide passivation layer and
anti-reflective coating 110. Absorption of photons within substrate
100 generates electron hole pairs that diffuse through the
substrate and are collected at the rear of the cell by n-doped
region 150 and p-doped region 140, respectively. Electrons are
collected and provided to an external circuit through negative
contact 120 and positive contact 130.
[0011] FIG. 2a-1 show an exemplary process flow for a borderless
interdigitated back contact solar cell.
[0012] FIG. 2a shows a lightly doped absorber 200, which is
p-doped. However, n-doped absorbers are also within the scope of
the instant disclosure.
[0013] FIG. 2b shows the blanket deposition or implantation of
p-type dopants to form a p-doped region 210 within a surface region
at the back surface of the lightly doped absorber 200 under an
optional screen oxide layer (not shown).
[0014] FIG. 2c shows the formation of hardmask layer 220 on blanket
p-doped region 210.
[0015] FIG. 2d shows the formation of recesses 230 within the
lightly doped absorber.
[0016] FIG. 2e shows side wall spacers (SWS) 240 being provided
within recess 230. Further, a shallow n-type dopant deposition or
implantation is provided to form n-doped regions 250.
[0017] FIG. 2f shows an anneal of the doped regions by O.sub.2
drive-in, wherein the thickness of the doped regions increases, in
particular p-doped region 220 increasing as indicated at 222 and
n-doped region 250 increasing as indicated at 252. Hardmask layer
220 and sidewall spacers 240 are preferably removed prior to the
drive-in anneal as shown, but may alternatively be left in the
structure if they are insulating.
[0018] FIG. 2g shows the substrate after the performance of an
oxide strip.
[0019] FIG. 2h shows the structure of FIG. 2g after front surface
passivation and formation of an optional antireflection coating
layer 211 (where it is noted that this front surface treatment may
alternatively be performed earlier or later in the process) and
after deposition of passivating/insulating layer 260, on the back
surface (where it is noted that layer 260 is optional if sidewall
spacers 240 and hardmask layer 220 still remain in the
structure).
[0020] FIG. 2i shows the opening of contact holes 270 in layer 260
to n-doped regions 252.
[0021] FIG. 2j shows a different cross section of the substrate
after the steps of FIG. 2h and after contact holes 277 for p-doped
regions 222 have been provided.
[0022] FIG. 2k shows the structure of FIG. 2i after implementation
of a non-self-aligned contact scheme utilizing the formation of
metal layers 280 connecting the n-doped regions to the external
circuit.
[0023] FIG. 2l shows the structure of FIG. 2j after implementation
of the FIG. 2k non-self-aligned contact scheme utilizing the
formation of metal layers 288 connecting the p-doped regions to the
external circuit.
[0024] FIG. 3 shows interdigitated p-doped regions 320 and n-doped
regions 330 in plan view. Dashed line 310 corresponds to a
cross-section as depicted in FIGS. 2d-2h.
[0025] FIG. 4 depicts alternating interdigitated regions 420 and
430 having electrical contacts 440 and 450, respectively, where
dashed line 411 corresponds to a cross-section as depicted in FIGS.
2i and 2k and dashed line 412 corresponds to a cross-section as
depicted in FIGS. 2j and 2l. Electrical contacts 450 are connected
by the same metal layer which is placed in the area indicated by
dashed rectangle 410.
[0026] FIGS. 5a-5i show a second exemplary process flow for a
borderless interdigitated back contact solar cell.
[0027] FIG. 5a shows a lightly doped absorber 500, which is
p-doped. However, n-doped absorbers are also within the scope of
the instant disclosure.
[0028] FIG. 5b shows the formation of a n-doped region 510 by
blanket implantation at the back surface.
[0029] FIG. 5c shows the formation of a hardmask layer 520 on the
n-doped region 510.
[0030] FIG. 5d shows the formation of recess 530 within absorber
500 and extending through the hardmask layer and the n-doped
region.
[0031] FIG. 5e shows the formation of sidewall spacers (SWS) 540
within recess 530, followed by a blanket implantation of p-doped
regions 511 within the bottom of recess 530.
[0032] FIG. 5f shows the removal of the remainder of hardmask layer
520.
[0033] FIG. 5g shows the structure of FIG. 5f after blanket deposit
of a metal on the p-doped and the n-doped regions 510 and 511
followed by an anneal and selective metal etch to form metal
silicide regions 580 and 581 self-aligned to regions 510 and
511.
[0034] FIG. 5h shows the structure of FIG. 5g after implementation
of a self-aligned contact scheme in which non-connecting metal
layers 590 and 591 (which may be the same metal deposited in the
same deposition step) are provided on top of metal silicide regions
580 and 581 by a deposition process. To prevent shorting, the top
of metal layer 591 over silicide regions 581 must remain thin
enough not to connect to the bottom region of metal layer 590 over
silicide regions 580. In addition, the front surface of the solar
cell is passivated and provided with an antireflective coating 595.
It is noted that this front surface treatment may alternatively be
performed earlier or later in the process.
[0035] FIG. 5i shows a top view of the structure of FIG. 5h. Dashed
line 550 corresponds to the cross section of FIGS. 5d to 5h. Metal
layer 590 connects the individual p-doped regions and metal layer
591 connects the individual n-doped regions within the substrate
500.
DESCRIPTION OF THE BEST AND VARIOUS EMBODIMENTS
[0036] The foregoing and other objects, aspects, and advantages
will be better understood from the following detailed description
of the best and various embodiments. Throughout the various views
and illustrative embodiments of the present disclosure, like
reference numbers are used to designate like elements.
[0037] In a typical embodiment, an interdigitated borderless
contact structure is fabricated of n-doped and p-doped contact
regions that are both separated from each other and self-aligned
with respect to each other. An important geometric feature of this
structure is that one set of contacts is recessed relative to the
other, so that the spacing between the contacts is in a vertical
dimension rather than a horizontal one. The spacing between the
contacts can thus be varied just by changing the recess depth,
without changing a photolithographic mask.
[0038] In the exemplary process flow of FIGS. 2a to 2l, borderless
interdigitated contacts are provided in a solar cell. The exemplary
flow is illustrated for the case of ion-implanted dopants and
silicon, though other doping methods and absorber layers could be
used. For example, one or both of the n-type (or low work function)
and p-type (or high work function) contact regions might be formed
by a blanket or self-aligned silicide instead of by ion
implantation.
[0039] The IBCs are obtained by placing at least one of a metallic
material having a high work function onto one part of a
lightly-doped absorber and/or a second metallic material in a
different location having a low work function. Typically, a low
temperature annealing of the metallic materials may be performed to
form silicides if the substrate material is Si and germanides if
the substrate material is Ge.
[0040] In contrast to an interdigitated front contact (IFC) device
the metallic materials may be thick and transparency is not
required.
[0041] The instant IBCs contain surfaces of separation regions
between the n-doped regions and p-doped contacts that are
perpendicular to the plane of the back surface. Perpendicular
sidewalls allow for the isolation regions between n-doped regions
and p-doped regions to have a near-zero-area footprint, leaving
more area for the desired n-doped regions and p-doped regions.
[0042] Typically, recesses with quasi-vertical sidewalls are formed
by reactive ion etching (ME) through a mask, a method that works
with any type of silicon and with any type of crystallinity
(amorphous, polycrystalline, and single crystal with any
orientation). Alternatively, for certain specific combinations of
Si surface orientation and recess (trench) orientation, recesses
with quasi-vertical sidewalls may also be formed by anisotropic wet
etching through a mask, using etchants such as tetramethyl ammonium
hydroxide (TMAH) or KOH, which have very low etch rates for surface
planes having a 111 orientation. For example, Si with a 110 surface
orientation can be patterned with an anisotropic wet etch through a
mask to form trenches having vertical sidewalls comprising 111
planes. In contrast, anisotropic wet etching of 100-oriented Si
through a mask would typically result in sidewalls comprising 111
planes of Si having an inclination of about 54.degree. to the
horizontal, which is not desired for the IBCs herein because the
sloped sidewalls would not have a near-zero-footprint.
[0043] Both self-aligned and non-self-aligned approaches may be
used to provide the metallization for the n-doped and p-doped
regions. In the self-aligned approach shown in FIGS. 5g and 5h, the
recess must be thicker than the added metal thickness to avoid
contact between the top of the metal contacting the recessed
regions and the bottom of the metal contacting the non-recessed
regions. Self-aligned approaches typically utilize selective
metallization processes such as those that selectively plate metal
directly on the n-doped and p-doped regions; self-aligned silicide
(salicide) processes, which include blanket metal deposition,
selective reaction with Si to make a silicide over n the n-doped
and p-doped regions followed by the selective etch of unreacted
metal over the sidewall spacer regions; and selective plating on a
silicide seed layer formed by the aforementioned salicide process.
A preferred embodiment is forming a silicide seed layer and
selectively plating Cu.
[0044] Under certain circumstances, the self-aligned metallization
of FIGS. 5g and 5h may also be accomplished with a blanket
(non-selective) deposition process. For example, a highly
directional physical vapor deposition process (e.g., evaporation or
collimated sputtering) may be used to form separated contacts 590
and 591 of FIG. 5h if residuals on the upper portion of sidewall
spacers 540 are negligible (or thin enough to be removable without
significantly reducing the thickness of the remaining contact).
[0045] In non-self-aligned approaches, one or more patterned metals
may be used to form separated contacts. For example, a coarsely
patterned metal may be deposited through a dielectric layer
patterned with contact vias, as shown in FIGS. 2k, 2l, and 4.
Alternatively, the metallization might be a mix of self-aligned and
non-self-aligned approaches. For example, a first patterned metal
might be selective and self-aligned for contacts to one doping type
while a second patterned metal might be non-self-aligned for
contacts to the other doping type.
[0046] In a preferred embodiment, IBCs have work-function tuned
silicides on the back surface of a crystalline Si absorber layer,
which are formed from the same metal silicide (MSix) for both
n-type and p-type contacts, with work function tuning effected by
introducing different dopants that segregate to the Si/MSix
interface. This approach offers reduced process complexity because
the metal for both silicide contacts can be deposited in the same
process step, low thermal budget, and the potential of lower cost
processing.
[0047] Specifically, the same metal silicide, using a single metal,
can be used to form both the high and low work function junctions,
which replace the p-doped region and the n-doped region,
respectively. By incorporating p-type or n-type dopants to tailor
the local work function, producing high barrier height Schottky
junctions and low barrier height "ohmic contacts" allows using the
same metal for both contacts. Annealing is performed to create the
silicides and to activate the desired dopants incorporated into the
silicide or into the Si adjacent to the silicide.
[0048] Disclosed herein are exemplary IBC solar cell geometries
utilizing n-type and p-type workfunction-tuned silicides, shown in
FIG. 5, along with a representative process flow by which such cell
structures may be made. In these structures, connecting the
individual cells to make arrays of solar cells is a simple task
because both sets of contacts are on the same side of the cell. The
contact scheme will vary depending on whether the cells are to be
connected in series (n-contact of one cell to p-contact of the
next, so the voltages add, a "monolithic" configuration) or in
parallel (n-contacts of all cells connected to a first terminal and
p-contacts of all cells connected to a second terminal, so the
currents add). It should be noted that monolithic design, while
utilizing similar junction formation as presented here, would
additionally require an insulating substrate (SiO.sub.2, ceramic,
polymer) and separation of the large silicon devices into multiple
small areas by laser cutting or an isolation etch.
[0049] The dopants that segregate to the MSix/Si interface are
preferably introduced prior to metal deposition. The metal for the
silicide regions is blanket-deposited on a surface containing
regions of exposed Si with which the metal will react to form a
silicide, and regions of nonreactive material (e.g., sidewall
spacers of SiO.sub.2) with which the metal will not react. A
typical method of introducing dopants is by low energy ion
implantation. Low energy is preferable so that the dopants remain
close to the Si surface. After annealing to form a silicide, the
unreacted metal is removed by a selective etch that leaves the
metal silicide.
[0050] The dopants that segregate to the MSix/Si interface may also
be introduced during the metal deposition step itself, for example
by sputter depositing from a doped metal alloy target optimized for
one of the electrode contact types. However, this requires the
presence of compensating dopants in the other electrode contact
type at a level much higher than that introduced from the deposited
metal.
[0051] FIGS. 5a to 5h show an exemplary process flow for making
borderless interdigitated contacts in a solar cell utilizing metal
silicides workfunction tuned with MSix/Si interface-segregated
dopants.
[0052] These solar cells with high and low work-function-tuned
silicides of the same metal may be implemented with a wide range of
finger dimensions, front surface texture, passivation layers,
antireflection coatings, etc. and are meant to be exemplary rather
than limiting.
[0053] In a typical embodiment, a borderless interdigitated back
contact solar cell further comprises a front surface layer having a
higher concentration of a dopant having the same doping type as the
lightly doped absorber.
[0054] In another typical embodiment, the borderless interdigitated
back solar cell comprises a first conductive contact region at the
at least one of the p-doped region and the high work function
region and a second conductive contact region at the at least one
of the n-doped region and the low work function region.
[0055] Typically, the lightly doped absorber of the borderless
interdigitated back contact solar cell is monocrystalline or
polycrystalline. The lightly doped absorber is typically a material
selected from the group consisting of Si, Ge, and SiGe alloys.
[0056] In another typical embodiment, the lightly-doped absorber is
n-doped. In yet another typical embodiment, the lightly-doped
absorber is p-doped.
[0057] Further, in a typical embodiment the at least one of the
p-doped region and the high work function region and the at least
one of the n-doped region and the low work function region are
vertically spaced-apart by a distance of from about 1 micrometer to
about 200 micrometers. In more preferred embodiment, the at least
one of the p-doped region and the high work function region and the
at least one of the n-doped region and the low work function region
are vertically spaced-apart by a distance of from about 5
micrometers to about 50 micrometers.
[0058] In a particular embodiment, the at least one of the p-doped
region and the high work function regions of the interdigitated
back contact solar cell comprises the high work function region. In
another particular embodiment, at least one of the n-doped region
and the low work function regions of the borderless interdigitated
back contact solar cell comprises the low work function region.
[0059] With particularity, the high work function region provides a
potential difference having a magnitude of at least 0.2 volts at an
interface with the lightly-doped absorber. Also with particularity,
the low work function region provides a potential difference having
a magnitude of at least 0.2 volts at an interface with the
lightly-doped absorber.
[0060] In a particular embodiment, the high work function region is
a metal-containing material selected from the group consisting of
metal, metal silicide, and metal germanides, or mixtures or
multilayers thereof. In another particular embodiment, the low work
function region is a metal-containing material selected from the
group consisting of metal, metal silicide, and metal germanides, or
mixtures or multilayers thereof. With particularity, the metal for
the high work function region is selected from the group consisting
of nickel, platinum, nickel platinum, cobalt, titanium, and
tungsten. Also with particularity, the metal for the low work
function region is selected from the group consisting of nickel,
platinum, nickel platinum, cobalt, titanium, and tungsten.
[0061] In yet another particular embodiment, a dopant of the
lightly-doped absorber is selected from the group consisting of Al,
As, B, Ga, In, P, and Sb.
[0062] With particularity, the borderless interdigitated back
contact solar cell comprises a sidewall between the at least one of
the n-doped region or the low work function region and between the
at least one of the p-doped region and the high work function
region, wherein the sidewall is substantially perpendicular to the
front surface.
[0063] Also with particularity, an insulating sidewall spacer is
disposed on the sidewall. In yet another particular embodiment, the
insulating sidewall spacer is selected from the group consisting of
insulating oxides, insulating nitrides, ceramics, and polymers, or
mixtures or multilayers of thereof. In a particular embodiment, the
insulating oxide is silicon oxide. In another particular
embodiment, the insulating nitride is silicon nitride.
[0064] With particularity, the borderless interdigitated back
contact solar cell comprises at least one of a conductive contact,
a transparent conductive oxide layer, an antireflective coating, a
surface texturing, and a surface passivation layer.
[0065] Typically, a concentration of a dopant in the lightly-doped
absorber is of from about 110.sup.13 atoms cm.sup.-3 to about
110.sup.17 atoms cm.sup.-3. Also typically, a concentration of the
same dopant in the supplemental absorber region is of from about
110.sup.17 atoms cm.sup.-3 to about 110.sup.21 atoms cm.sup.-3.
[0066] With particularity, a concentration of a dopant in the
p-doped region is of from about 110.sup.13 atoms cm.sup.-3 to about
110.sup.17 atoms cm.sup.-3. Also with particularity, a
concentration of a dopant in the n-doped region is of from about
110.sup.17 atoms cm.sup.-3 to about 110.sup.21 atoms cm.sup.-3.
[0067] For borderless interdigitated back contact solar cell
possessing silicided contacts, a TiN cap can be deposited on top of
the low work function (Wf) and high work function (Wf) metals to
prevent oxidation of the metals before forming the silicide.
[0068] While the examples of the present disclosure utilize
borderless interdigitated back contact solar cell comprising metals
with high work functions and low work functions to create two
potential differences, solar cells in which one potential
difference is created by metal silicide work function tuning and a
second potential difference is created by conventional doping
(diffusion, ion implantation, or in-situ doping during
semiconductor layer growth) are also contemplated.
[0069] In a preferred embodiment, the same metal is used for both
silicides by adding acceptor or donor dopants into the silicide and
adjacent regions of the Si. Both high work function and low work
function tuning can be achieved from one silicide by interface
modification.
[0070] In a preferred embodiment, Ni is used as the metal for the
metal silicide because the self-aligned Ni silicide process is
well-understood and considered a mature processing method. Ni is
the dominating diffusion species during the silicide reaction and
NiSi has very low resistivity (about 10 .mu..OMEGA.cm). The
dopant-segregation can also be induced by implantation into Si,
which is then followed by silicidation.
[0071] The embodiments described hereinabove are further intended
to explain best modes known of practicing it and to enable others
skilled in the art to utilize the disclosure in such, or other,
embodiments and with the various modifications required by the
particular applications or uses. Accordingly, the description is
not intended to limit it to the form disclosed herein. Also, it is
intended that the appended claims be construed to include
alternative embodiments.
[0072] The foregoing description of the disclosure illustrates and
describes the present disclosure. Additionally, the disclosure
shows and describes only the preferred embodiments but, as
mentioned above, it is to be understood that the disclosure is
capable of use in various other combinations, modifications, and
environments and is capable of changes or modifications within the
scope of the concept as expressed herein, commensurate with the
above teachings and/or the skill or knowledge of the relevant
art.
[0073] The term "comprising" (and its grammatical variations) as
used herein is used in the inclusive sense of "having" or
"including" and not in the exclusive sense of "consisting only of."
The terms "a" and "the" as used herein are understood to encompass
the plural as well as the singular.
[0074] All publications, patents and patent applications cited in
this specification are herein incorporated by reference, and for
any and all purpose, as if each individual publication, patent or
patent application were specifically and individually indicated to
be incorporated by reference. In the case of inconsistencies, the
present disclosure will prevail.
* * * * *