U.S. patent application number 16/308883 was filed with the patent office on 2019-09-19 for electroluminescent diode array substrate, manufacturing method thereof and display panel.
The applicant listed for this patent is BOE TECHNOLOGY GROUP CO., LTD.. Invention is credited to Wenjun Hou.
Application Number | 20190288044 16/308883 |
Document ID | / |
Family ID | 64741043 |
Filed Date | 2019-09-19 |
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United States Patent
Application |
20190288044 |
Kind Code |
A1 |
Hou; Wenjun |
September 19, 2019 |
ELECTROLUMINESCENT DIODE ARRAY SUBSTRATE, MANUFACTURING METHOD
THEREOF AND DISPLAY PANEL
Abstract
An electroluminescent diode array substrate, a method of
manufacturing the electroluminescent diode array substrate and a
display panel are provided, and the electroluminescent diode array
substrate includes: a base substrate; and an auxiliary electrode, a
pixel definition layer, a first electrode, a functional layer and a
second electrode disposed on the base substrate, the pixel
definition layer is provided with a via hole structure, the
auxiliary electrode is disposed on at least one side of the via
hole structure, and the second electrode is electrically connected
with the auxiliary electrode.
Inventors: |
Hou; Wenjun; (Beijing,
CN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
BOE TECHNOLOGY GROUP CO., LTD. |
Beijing |
|
CN |
|
|
Family ID: |
64741043 |
Appl. No.: |
16/308883 |
Filed: |
June 20, 2018 |
PCT Filed: |
June 20, 2018 |
PCT NO: |
PCT/CN2018/091952 |
371 Date: |
December 11, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 51/5228 20130101;
H01L 27/32 20130101; H01L 27/3279 20130101; H01L 27/3246 20130101;
H01L 51/56 20130101; H01L 51/0005 20130101; H01L 51/5212 20130101;
H01L 2227/323 20130101; H01L 51/52 20130101 |
International
Class: |
H01L 27/32 20060101
H01L027/32; H01L 51/52 20060101 H01L051/52; H01L 51/56 20060101
H01L051/56; H01L 51/00 20060101 H01L051/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jun 30, 2017 |
CN |
201710558592.2 |
Claims
1. An electroluminescent diode array substrate, comprising: a base
substrate, and an auxiliary electrode, a pixel definition layer, a
first electrode, a functional layer, and a second electrode which
are disposed on the base substrate, wherein the pixel definition
layer is provided with a via hole structure; the auxiliary
electrode is disposed on at least one side of the via hole
structure; and the second electrode is electrically connected with
the auxiliary electrode.
2. The electroluminescent diode array substrate according to claim
1, wherein an upper surface of the auxiliary electrode is higher
than an upper surface of the functional layer in the via hole
structure.
3. The electroluminescent diode array substrate according to claim
1, wherein the auxiliary electrode is a structure in a U shape.
4. The electroluminescent diode, array substrate according to claim
1, wherein the auxiliary electrode is a plate-type structure; or
there are a plurality of auxiliary electrodes which are spaced
apart from each other.
5. The electroluminescent diode array substrate according to claim
3, wherein a conductive polymer layer is provided in the via hole
structure, and the second electrode is electrically connected with
the auxiliary electrode by the conductive polymer layer.
6. The electroluminescent diode array substrate according to claim
5, wherein a thickness of the conductive polymer layer is less than
a thickness of the pixel definition layer.
7. The electroluminescent diode array substrate according to claim
5, wherein a conductivity of the conductive polymer layer is
greater than 10.sup.-6 S/m.
8. The electroluminescent diode array substrate according to claim
5, wherein a material of the conductive polymer layer comprises at
least one of polypyrrole, polyphenylene sulfide,
polyphthalocyanine, polyaniline and polythiophene.
9. The electroluminescent diode array substrate according to claim
5, further comprising a planarization layer disposed between the
base substrate and the pixel definition layer, wherein the via hole
structure extends from the pixel definition layer and penetrates
through the planarization layer.
10. The electroluminescent diode array substrate according to claim
9, wherein a thickness of the conductive polymer layer is larger
than a thickness of the planarization layer, and the thickness of
the conductive polymer layer is smaller than a sum of the thickness
of the planarization layer and a thickness of the pixel definition
layer.
11. The electroluminescent diode array substrate according to claim
9, wherein an upper surface of the conductive polymer layer is
flush with an upper surface of the pixel definition layer.
12. The electroluminescent diode array substrate according to claim
9, wherein there are a plurality of via hole structures penetrating
through the planarization layer and the pixel definition layer, and
the second electrode is electrically connected with the auxiliary
electrode by the plurality of via hole structures.
13. The electroluminescent diode array substrate according to claim
9, wherein a thickness of the functional layer is from about 100 nm
to about 300 nm, a thickness of the auxiliary electrode is from
about 0.5 .mu.m to about 1 .mu.m, a thickness of the planarization
layer is from about 1 .mu.m to about 3 .mu.m, a thickness of the
pixel definition layer is from about 1 .mu.m to about 3 .mu.m, and
a thickness of the conductive polymer layer is from about 2 .mu.m
to about 5.7 .mu.m.
14. The electroluminescent diode array substrate according to claim
13, wherein the functional layer comprises at least one of a
light-emitting layer, an electron injection layer, an electron
transmission layer, a hole injection layer and a hole transmission
layer.
15. A display panel, comprising the electroluminescent diode array
substrate according to claim 1.
16. A method of manufacturing an electroluminescent diode array
substrate, comprising: providing a base substrate, forming an
auxiliary electrode, a pixel definition layer, a first electrode, a
functional layer and a second electrode on the base substrate,
wherein the pixel definition layer is provided with a via hole
structure; the auxiliary electrode is disposed on at least one side
of the via hole structure; and the second electrode is electrically
connected with the auxiliary electrode.
17. The manufacturing method according to claim 16, wherein an
upper surface of the auxiliary electrode which is formed on at
least one side of the via hole structure is higher than an upper
surface of the functional layer in the via hole structure.
18. The manufacturing method according to claim 16, before forming
the auxiliary electrode, further comprising: forming a
planarization layer on the base substrate, wherein the via hole
structure extends from the pixel definition layer and penetrates
through the planarization layer.
19. The manufacturing method according to claim 16, further
comprising: forming a conductive polymer layer in the via hole
structure, wherein the second electrode is electrically connected
with the auxiliary electrode by the conductive polymer layer.
20. The manufacturing method according to claim 19, wherein the
conductive polymer layer is formed by an inkjet printing method.
Description
[0001] The present application claims the priority of the Chinese
Patent Application No. 201710558592.2, filed on Jun. 30, 2017,
which is incorporated herein by reference as part of the disclosure
of the present application.
TECHNICAL FIELD
[0002] Embodiments of the present disclosure relate to an
electroluminescent diode array substrate, a method of manufacturing
the electroluminescent diode array substrate, and a display
panel.
BACKGROUND
[0003] Electroluminescent diodes have advantages of simple
manufacturing process, low production cost, high light-emitting
efficiency, being easy to form flexible structures, low power
consumption, high color saturation, wide viewing angle, and so on.
A display technology by using electroluminescent diodes has become
an important display technology.
[0004] An electroluminescent diode comprises an organic
light-emitting diode (OLED), a quantum dot light-emitting diode
(QLED) or the like. For example, an organic light-emitting diode
(OLED) array substrate comprises a plurality of pixel units, and
each of the pixel units comprises a switching transistor, a driving
transistor, an OLED display device and so on. The OLED display
device is a current-driven light-emitting device, and the OLED
display device mainly comprises an anode, a cathode and an organic
material functional layer. The working principle of the OLED
display device is that the organic material functional layer is
driven by an electric field formed by the anode and the cathode,
then carriers are injected and recombined to emit light. The
quantum dot light-emitting diode (QLED) has a similar structure to
the organic light-emitting diode (OLED). The main difference
between the quantum dot light-emitting diode (QLED) and the organic
light-emitting diode is that the luminescence center of the QLED is
composed of quantum dots, and the light-emitting principle of the
quantum dot light-emitting diode (QLED) is that electrons and holes
are combined to form photons in a quantum dot layer, then the
photons are recombined to emit light.
SUMMARY
[0005] At least one embodiment of the present disclosure provides
an electroluminescent diode array substrate, and the
electroluminescent diode array substrate includes: a base
substrate, and an auxiliary electrode, a pixel definition layer, a
first electrode, a functional layer, and a second electrode which
are disposed on the base substrate, and the pixel definition layer
is provided with a via hole structure; the auxiliary electrode is
disposed on at least one side of the via hole structure; and the
second electrode is electrically connected with the auxiliary
electrode.
[0006] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, an
upper surface of the auxiliary electrode is higher than an upper
surface of the functional layer in the via hole structure.
[0007] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, the
auxiliary electrode is a structure in a U shape.
[0008] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, the
auxiliary electrode is a plate-type structure; or there are a
plurality of auxiliary electrodes which are spaced apart from each
other.
[0009] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
conductive polymer layer is provided in the via hole structure, and
the second electrode is electrically connected with the auxiliary
electrode by the conductive polymer layer.
[0010] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
thickness of the conductive polymer layer is less than a thickness
of the pixel definition layer.
[0011] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
conductivity of the conductive polymer layer is greater than
10.sup.-6 S/m.
[0012] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
material of the conductive polymer layer comprises at least one of
polypyrrole, polyphenylene sulfide, polyphthalocyanine, polyaniline
and polythiophene.
[0013] For example, the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure,
further includes a planarization layer disposed between the base
substrate and the pixel definition layer, and the via hole
structure extends from the pixel definition layer and penetrates
through the planarization layer.
[0014] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
thickness of the conductive polymer layer is larger than a
thickness of the planarization layer, and the thickness of the
conductive polymer layer is smaller than a sum of the thickness of
the planarization layer and a thickness of the pixel definition
layer.
[0015] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, an
upper surface of the conductive polymer layer is flush with an
upper surface of the pixel definition layer.
[0016] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure,
there are a plurality of via hole structures penetrating through
the planarization layer and the pixel definition layer, and the
second electrode is electrically connected with the auxiliary
electrode by the plurality of via hole structures.
[0017] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, a
thickness of the functional layer is from about 100 nm to about 300
nm, a thickness of the auxiliary electrode is from about 0.5 .mu.m
to about 1 .mu.m, a thickness of the planarization layer is from
about 1 .mu.m to about 3 .mu.m, a thickness of the pixel definition
layer is from about 1 .mu.m to about 3 .mu.m, and a thickness of
the conductive polymer layer is from about 2 .mu.m to about 5.7
.mu.m.
[0018] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the present disclosure, the
functional layer comprises at least one of a light-emitting layer,
an electron injection layer, an electron transmission layer, a hole
injection layer and a hole transmission layer.
[0019] At least one embodiment of the present disclosure further
provides a display panel, and the display panel includes any one of
the electroluminescent diode array substrate described above.
[0020] At least one embodiment of the present disclosure further
provides a method of manufacturing an electroluminescent diode
array substrate, and the method includes: providing a base
substrate, forming an auxiliary electrode, a pixel definition
layer, a first electrode, a functional layer and a second electrode
on the base substrate, and the pixel definition layer is provided
with a via hole structure; the auxiliary electrode is disposed on
at least one side of the via hole structure; and the second
electrode is electrically connected with the auxiliary
electrode.
[0021] For example, in the method provided by at least one
embodiment of the present disclosure, an upper surface of the
auxiliary electrode which is formed on at least one side of the via
hole structure is higher than an upper surface of the functional
layer in the via hole structure.
[0022] For example, the method provided by at least one embodiment
of the present disclosure, before forming the auxiliary electrode,
further includes: forming a planarization layer on the base
substrate, wherein the via hole structure extends from the pixel
definition layer and penetrates through the planarization
layer.
[0023] For example, the method provided by at least one embodiment
of the present disclosure, further includes: forming a conductive
polymer layer in the via hole structure, wherein the second
electrode is electrically connected with the auxiliary electrode by
the conductive polymer layer.
[0024] For example, in the method provided by at least one
embodiment of the present disclosure, the conductive polymer layer
is formed by an inkjet printing method.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In order to clearly illustrate the technical solution of the
embodiments of the disclosure, the drawings of the embodiments will
be briefly described. It is apparent that the described drawings
are only related to some embodiments of the disclosure and thus are
not limitative of the disclosure.
[0026] FIG. 1 is a schematic sectional view of an organic
light-emitting diode (OLED) array substrate;
[0027] FIG. 2 is a schematic sectional view of an OLED array
substrate provided by an embodiment of the present disclosure;
[0028] FIG. 3 is a schematic view of a planar structure of an OLED
array substrate provided by an embodiment of the present
disclosure;
[0029] FIG. 4 is a schematic sectional view of an OLED array
substrate provided by another embodiment of the present
disclosure;
[0030] FIG. 5 is a schematic sectional view of an OLED array
substrate provided by still another embodiment of the present
disclosure;
[0031] FIG. 6 is a schematic sectional view of an OLED array
substrate provided by still another embodiment of the present
disclosure;
[0032] FIG. 7 is a schematic sectional view of an OLED array
substrate provided by still another embodiment of the present
disclosure;
[0033] FIG. 8 is a block diagram of a display panel provided by an
embodiment of the present disclosure; and
[0034] FIG. 9 is a flow diagram of a manufacturing method of an
OLED array substrate provided by an embodiment of the present
disclosure.
REFERENCE NUMERALS
[0035] 101, 201--base substrate; 102, 202--auxiliary electrode;
103, 203--planarization layer; 104, 204--first electrode;
105--organic material functional layer; 205--functional layer; 106,
206--second electrode; 107, 207--via hole structure; 108,
208--pixel definition layer; 209--conductive polymer layer;
1--display panel; 2--electroluminescent diode array substrate;
20--OLED device; 30--switching transistor; 40--driving
transistor.
DETAILED DESCRIPTION
[0036] In order to make objects, technical details and advantages
of embodiments of the disclosure clear, the technical solutions of
the embodiments will be described in a clearly and fully
understandable way in connection with the related drawings. It is
apparent that the described embodiments are just a part but not all
of the embodiments of the disclosure. Based on the described
embodiments herein, those skilled in the art can obtain, without
any inventive work, other embodiment(s) which should be within the
scope of the disclosure.
[0037] Unless otherwise defined, all the technical and scientific
terms used herein have the same meanings as commonly understood by
one of ordinary skill in the art to which the present invention
belongs. The terms "first," "second," etc., which are used in the
description and claims of the present application, are not intended
to indicate any sequence, amount or importance, but distinguish
various components. The terms "comprises," "comprising,"
"includes," "including," etc., are intended to specify that the
elements or the objects stated before these terms encompass the
elements or the objects listed after these terms as well as
equivalents thereof, but do not exclude other elements or objects.
The phrases "connect", "connected", etc., are not intended to
define a physical connection or mechanical connection, but may
include an electrical connection which is direct or indirect. The
terms "on," "under," "right," "left" and the like are only used to
indicate relative position relationship, and when the position of
an object is described as being changed, the relative position
relationship may be changed accordingly.
[0038] Electroluminescent diodes, for example, organic
light-emitting diodes (OLED) and quantum dot light-emitting diodes
(QLED) are mostly current-driven devices. In a case where an
external circuit used for providing a driving current is too long
or too thin, the external circuit leads to a serious voltage
gradient (a voltage drop). To reduce the voltage drop, an auxiliary
electrode is usually added in an electroluminescent diode display
device. For example, the auxiliary electrode is formed on the
electroluminescent diode array substrate, and the auxiliary
electrode is electrically connected with a cathode by a via hole
structure. However, in the process of manufacturing an OLED device,
especially in the process of manufacturing a large-sized OLED
panel, an organic material is evaporated at the via hole structure,
and the organic material separates the cathode from the auxiliary
electrode. In the process of manufacturing a QLED device,
especially in the process of manufacturing a large-sized QLED
panel, a quantum dot light-emitting layer is printed at the via
hole structure, and the quantum dot light-emitting layer separates
the cathode from the auxiliary electrode.
[0039] For example, the organic light-emitting diode array
substrate is taken for an example. FIG. 1 is a schematic sectional
view of an organic light-emitting diode (OLED) array substrate. As
illustrated in FIG. 1, the organic light-emitting diode array
substrate comprises: a base substrate 101; and an auxiliary
electrode 102, a planarization layer 103, a first electrode 104, an
organic material functional layer 105, a second electrode 106 and a
pixel definition layer 108 disposed on the base substrate; and the
planarization layer 103 is provided with a via hole structure
107.
[0040] For example, the second electrode 106 of the OLED array
substrate is generally made of metallic silver with a thinner
thickness, and the first electrode 104 is generally made of indium
tin oxide (ITO), and both the resistivity of the metal silver with
a thinner thickness and the resistivity of the indium tin oxide
(ITO) are high, and especially for the second electrode 106 with a
large area, the second electrode 106 made of the thin metal silver
has a higher resistivity, and the voltage drop (IR drop) is larger;
in this case, the actual driving voltage of the OLED array
substrate is greatly different from a power voltage, and in a
large-sized OLED display device, a large area of uneven brightness
phenomenon occurs, which affects the display effect. As illustrated
in FIG. 1, the auxiliary electrode 102 formed on the base substrate
102 reduces the resistance of the second electrode 106. However,
the subsequently formed organic material functional layer 105
separates the auxiliary electrode 102 from the second electrode
106, thus the auxiliary electrode 102 can't be in parallel connect
with the second electrode 106, and can't reduce the voltage drop
effectively.
[0041] The inventor of the present disclosure notes that changing
the structural design of the auxiliary electrode can ensure that
the second electrode is electrically connected with the auxiliary
electrode, in this way, the auxiliary electrode electrically
connected with the second electrode increases the equivalent
thickness of the second electrode, thereby the resistance of the
second electrode is reduced, and the problem that the large voltage
drop caused by the large resistance of the second electrode in a
case where the second electrode made of metallic silver with a
thinner thickness is avoided, furthermore, the problem of damaging
an organic light-emitting display panel due to the large voltage
drop is avoided as well.
[0042] At least one embodiment of the present disclosure provides
an electroluminescent diode array substrate, and the
electroluminescent diode array substrate comprises: a base
substrate, and an auxiliary electrode, a pixel definition layer, a
first electrode, a functional layer, and a second electrode, which
are disposed on the base substrate; the pixel definition layer is
provided with a via hole structure; the auxiliary electrode is
disposed on at least one side of the via hole structure; and the
second electrode is electrically connected with the auxiliary
electrode. The embodiment of the present disclosure ensures that
the second electrode is electrically connected with the auxiliary
electrode by changing the structural design of the auxiliary
electrode, thereby the problem of the large voltage drop in the
external circuit is avoided.
[0043] At least one embodiment of the disclosure provides an
electroluminescent diode array substrate, and the
electroluminescent diode array substrate is an organic
light-emitting diode (OLED) array substrate or a quantum dot
light-emitting diode (QLED) array substrate. The following is
illustrated by taking the electroluminescent diode array substrate
as the organic light-emitting diode (OLED) array substrate for
example.
[0044] For example, FIG. 2 is a schematic sectional view of an OLED
array substrate provided by at least one embodiment of the present
disclosure. As illustrated in FIG. 2, the organic light-emitting
diode array substrate 2 comprises: a base substrate 201, and an
auxiliary electrode 202, a pixel definition layer 208, a first
electrode 204, a functional layer 205 (for example, an organic
material functional layer) and a second electrode 206 disposed on
the base substrate 201, the pixel definition layer 208 is provided
with a via hole structure 207, the auxiliary electrode 202 is
disposed on at least one side of the via hole structure 207, and
the second electrode 206 is electrically connected with the
auxiliary electrode 202.
[0045] It should be noted that, the auxiliary electrode disposed on
at least one side of the via hole structure not means that the
auxiliary electrode is disposed on the outside or the inside of the
via hole structure, but means that the auxiliary electrode is
disposed on a side wall of at least one direction of the outside
side of the via hole structure.
[0046] For example, an upper surface of the auxiliary electrode 202
is higher than an upper surface of the functional layer 205 of the
via hole structure 207.
[0047] For example, the OLED array substrate includes a display
region and a peripheral region outside the display region. The
display region is also referred to as an AA (Active Area), and the
display region is generally used for displaying. The peripheral
region may be used for arranging a driving circuit, packaging a
display panel, and the like. For example, in the peripheral region,
the second electrode 206 is electrically connected with the
auxiliary electrode 202, and in the display region, the second
electrode 206 is electrically connected with the auxiliary
electrode 202, in this way, the second electrode 206 and the
auxiliary electrode 202 are connected at both ends respectively to
form a parallel-connected circuit, or both ends that the second
electrode 206 and the auxiliary electrode 202 connected to each
other are located in the display region. In a case where the second
electrode 206 receives a voltage signal and transmits the voltage
signal, and the voltage signal reaches the auxiliary electrode 202
that electrically connected to the second electrode 206, the
auxiliary electrode 202 transmits the voltage signal simultaneously
with the second electrode 206 as a branch of the voltage signal,
which is equivalent to that the second electrode 206 and the
auxiliary electrode 202 form the parallel-connected circuit, in
this way, the resistance in the process of electrical signal
transmission is reduced; or the auxiliary electrode 202 receives
the voltage signal firstly, in a case where the voltage signal
reaches the second electrode 206 electrically connected to the
auxiliary electrode 202, the second electrode 206 as a branch for
transmitting the voltage signal simultaneously with the auxiliary
electrode 202; or the second electrode 206 and the auxiliary
electrode 202 receives the voltage signal simultaneously, the
second electrode 206 and the auxiliary electrode 202 transmit the
voltage signal simultaneously as two branches.
[0048] For example, as illustrated in FIG. 3, the OLED array
substrate 2 further includes a power line, a data line and a gate
line (not shown in FIG. 3) disposed on the base substrate 201, a
pixel structure is disposed in a region defined by the gate line
and the data line intersecting with each other, for example, the
pixel structure includes a switching transistor 30, a driving
transistor 40, and an OLED device 20, and the switching transistor
30 is connected to the gate line and the data line, the driving
transistor 40 is connected to the switching transistor 30, the
power line, and the OLED device.
[0049] For example, as illustrated in FIG. 2 and FIG. 3, the pixel
definition layer 208 is located between the first electrode 204 and
the second electrode 206, and the pixel definition layer 208 is
used for isolating two sub-pixel units adjacent to each other.
[0050] For example, the pixel structure, the gate line and the data
line are located in the display region, in addition to the gate
line and the data line, the OLED array substrate may further
include a detection compensation line connecting a pixel unit and a
detection integrated circuit. The detection compensation line is
located in the display region.
[0051] For example, as illustrated in FIG. 2, the upper surface of
the auxiliary electrode 202 on at least one side of the via hole
structure 207 is higher than the upper surface of the functional
layer 205 in the via hole structure 207, in this way, the auxiliary
electrode 202 is electrically connected to the second electrode 206
through the portion of the auxiliary electrode that higher than the
upper surface of the functional layer 205 in the via hole structure
207.
[0052] For example, FIG. 4 is a schematic sectional view of an OLED
array substrate provided by another embodiment of the present
disclosure. As illustrated in FIG. 4, the organic light-emitting
diode array substrate further includes a planarization layer 203
disposed between the base substrate 201 and the pixel definition
layer 208, in which the via hole structure 207 extends from the
pixel definition layer 208 and penetrates through the planarization
layer 203.
[0053] For example, as illustrated in FIG. 4, the via hole
structure 207 extends from pixel definition layer 208 and
penetrates through planarization layer 203. In this way, the depth
of the via hole structure 207 is approximately equal to the sum of
the thickness of the pixel definition layer 208 and the thickness
of the planarization layer 203.
[0054] For example, in the embodiment of the present disclosure,
the thickness of the functional layer 205 is from about 100 nm to
about 300 nm, for example, the thickness of the functional layer
205 is 100 nm, 200 nm or 300 nm, etc.
[0055] For example, the thickness of auxiliary electrode 202 is
from about 0.5 .mu.m to about 1 .mu.m, such as 0.5 .mu.m, 0.6
.mu.m, 0.7 .mu.m, 0.8 .mu.m, 0.9 .mu.m or 1 .mu.m, etc.
[0056] For example, the thickness of planarization layer 203 is
from about 1 .mu.m to about 3 .mu.m, such as 1 .mu.m, 2 .mu.m or 3
.mu.m, etc.
[0057] For example, the thickness of the pixel definition layer 208
is from about 1 .mu.m to about 3 .mu.m, such as 1 .mu.m, 2 .mu.m or
3 .mu.m, etc.
[0058] For example, the thickness of the first electrode 204 is
from about 200 .mu.m to about 300 .mu.m, for example, 200 .mu.m,
250 .mu.m, or 300 .mu.m, etc.
[0059] For example, the thickness of the second electrode 206 is
from about 100 .mu.m to about 200 .mu.m, for example, 100 .mu.m,
150 .mu.m, or 200 .mu.m, etc.
[0060] For example, in a case where the second electrode 206 is
directly connected to the auxiliary electrode 202, the second
electrode 206 may have a segment difference (step), that is, the
second electrode 206 is broken. A conductive polymer layer 209 is
arranged in the via hole structure 207 to raise the functional
layer 205 so as to prevent the second electrode 206 from breaking,
as illustrated in FIG. 2 and FIG. 4, the conductive polymer layer
209 is formed between the auxiliary electrode 202 and the second
electrode 206. The second electrode 206 is electrically connected
with the auxiliary electrode 202 through the conductive polymer
layer 209 to reduce the risk of forming a segment difference of the
second electrode 206.
[0061] For example, the thickness of the conductive polymer layer
209 is larger than the thickness of the planarization layer 203,
and the thickness of the conductive polymer layer 209 is smaller
than the sum of the thickness of the planarization layer 203 and
the thickness of the pixel definition layer 208.
[0062] For example, the upper surface of the conductive polymer
layer 209 is flush with the upper surface of the pixel definition
layer 208, in this way, the risk that the second electrode 206
having a segment difference is basically eliminated.
[0063] For example, the thickness of the conductive polymer layer
209 is from about 2 .mu.m to about 5.7 .mu.m. For example, the
thickness of the conductive polymer layer is 2 .mu.m, 3 .mu.m, 4
.mu.m or 5 .mu.m, etc.
[0064] For example, the conductivity of the conductive polymer
layer is greater than 10.sup.-6 S/m, which ensures that the
auxiliary electrode 202 is electrically connected with the second
electrode 206.
[0065] For example, a material of the conductive polymer layer 209
comprises at least one of polypyrrole, polyphenylene sulfide,
polyphthalocyanine, polyaniline and polythiophene.
[0066] For example, FIG. 5 is a schematic sectional view of an OLED
array substrate provided by still another embodiment of the present
disclosure. As illustrated in FIG. 5, the auxiliary electrode 202
in the via hole structure 207 is a structure in a U shape, it is
equivalent to two side walls of the auxiliary electrode 202 being
raised so that the second electrode 206 is directly electrically
connected with the auxiliary electrode 202 at the via hole
structure 207, thus the step of forming the conductive polymer
layer is reduced, and the risk of forming a segment difference of
the second electrode 206 reduced.
[0067] It should be noted that, the auxiliary electrode 202 is a
structure in a U shape means that in the direction perpendicular to
the surface of the base substrate 201, the cross-section structure
of the auxiliary electrode (for example, the longitudinal
cross-section of the auxiliary electrode) is in a concave
shape.
[0068] For example, FIG. 6 is a schematic sectional view of an OLED
array substrate provided by still another embodiment of the present
disclosure. For example, the conductive polymer layer 209 is formed
on the auxiliary electrode 202 in a U shape, which further reduces
the risk of forming the segment difference of the second electrode
206.
[0069] For example, the auxiliary electrode 202 is a plate-type
structure, and the via hole structure 207 is at least covered with
the auxiliary electrode 202; or, on a plane parallel to the surface
of the base substrate 201 and along the extension direction of the
via hole structure 207, there are a plurality of auxiliary
electrodes 202, and the plurality of auxiliary electrodes 202 are
spaced apart from each other.
[0070] For example, FIG. 7 is a schematic sectional view of an OLED
array substrate provided by still another embodiment of the present
disclosure. As illustrated in FIG. 7, the electroluminescent diode
array substrate comprises a plurality of via hole structures 207
penetrating through the planarization layer 203 and the pixel
definition layer 208, and the second electrode 206 is electrically
connected with the auxiliary electrodes 202 by the plurality of via
hole structures 207, so that the second electrode 206 is connected
in parallel with the auxiliary electrodes 202 respectively. FIG. 7
shows two via hole structures 207. Obviously, the number of the via
hole structures in the embodiments of the present disclosure is not
limited to the above example, and more via hole structures 207 can
be formed to further reduce the resistance of the second electrode
and the auxiliary electrodes, in addition, the second electrode 206
connected in parallel with the auxiliary electrodes 202 through the
plurality of via hole structures 207 increases the thickness of the
second electrode 206, which is equivalent to increasing of the
cross-sectional area of the second electrode 206, and the
resistance of the second electrode 206 is further reduced.
[0071] For example, the pixel definition layer 208 is made of an
organic insulating material (for example, an acrylic resin) or an
inorganic insulating material (for example, silicon nitride SiNx or
silicon oxide SiOx), the pixel definition layer 208 has an
insulating property. The pixel definition layer 208 may be
considered as the insulating structure disposed between the second
electrode 206 and the auxiliary electrode 202.
[0072] For example, the first electrode 205 is made of a
transparent conductive material, and the transparent conductive
material includes indium tin oxide (ITO), indium zinc oxide (IZO),
indium gallium oxide (IGO), zinc gallium oxide (GZO)), Indium oxide
(In.sub.2O.sub.3), aluminum zinc oxide (AZO) and carbon
nanotubes.
[0073] For example, the first electrode 205 is made of a metal
conductive material, and the metal conductive material includes a
single metal such as Cu, Cr, Mo, Au, Ag and Pt metal, or an alloy
material formed of the above metals, for example, a copper chromium
alloy (CuCr) or a chromium molybdenum alloy (CrMo).
[0074] For example, the first electrode 205 is a stacked structure
formed by any combination of the above-mentioned transparent
conductive material and the metal conductive material. For example,
the first electrode 205 is in a structure that the metal conductive
material is sandwiched between two transparent conductive
materials, such as ITO-Mo-IZO, ITO-Cr--In2O3, ITO-Cu--ZnO and
ITO-Pt-IGO, or the first electrode 205 is a stacked double-layer
structure made of the metal conductive material and the transparent
conductive material, such as IZO--Mo, ITO-Cr, ZnO--Mg and ITO-Au.
For example, the stacked structure formed of any combination of the
transparent conductive material and the metal conductive material
is not limited to the stacked double-layer structure and the
stacked triple-layer structure. It may also be a stacked structure
with multiple layers of other layers, for example, a stacked
structure of four layers, a stacked structure of five layers,
etc.
[0075] It should be noted that, because the work function of the
metal material or the work function of the alloy material for
forming the first electrode is relatively low, the first electrode
has poor compatibility with the organic material functional layer
in the OLED array substrate. The transparent conductive material
formed on a side of the first metal layer close to the functional
layer formed of the organic material improves the work function of
the first metal, so that the first electrode is better matched with
the functional layer formed of the organic material. In addition,
the first electrode of the double-layer structure or the
triple-layer structure has a lower resistance than the first
electrode of the single-layer structure, and the resistance of the
first electrode is lower, in this way, the resistance of the first
electrode is reduced.
[0076] For example, the material of the second electrode 206
includes magnesium, aluminum, lithium or other single metal, or
magnesium aluminum alloy (MgAl), lithium aluminum alloy (LiAl), and
the like.
[0077] For example, in the electroluminescent diode array substrate
provided by at least one embodiment of the disclosure, taking the
array substrate as the organic light-emitting diode (OLED) array
substrate as an example, this functional layer includes a
light-emitting layer, an electron injection layer, an electron
transmission layer, a hole injection layer and a hole transmission
layer.
[0078] For example, the method of manufacturing the functional
layer in the organic light-emitting diode (OLED) array substrate
includes a vacuum evaporation method and a solution method. The
vacuum evaporation method is suitable for small organic molecules
without solvent, and the thicknesses of each layers of organic
material functional layer is uniform. The solution method includes
a spin coating method, an inkjet printing method and a nozzle
coating method, and the solution method is suitable for polymer
materials and soluble small molecules, it has the advantage of low
cost in production equipment, and has outstanding advantages in the
production of large-scale and large-sized products, especially, the
inkjet printing technology can accurately spray solution to the
pixel region.
[0079] It should be noted that, unlike the organic light-emitting
diode (OLED) array substrate, the quantum dots in the
self-luminescent quantum dots light-emitting diodes (QLED) cannot
adopt the same evaporation method as the self-luminescent OLEDs,
due to the phenomenon that the quantum dots are easy to be affected
by heat and moisture, and therefore only the ink-jet printing can
be used.
[0080] At least one embodiment of the present disclosure further
provides a display panel, and the display panel includes any one of
the electroluminescent diode array substrate described above.
[0081] For example, FIG. 8 is a block diagram of a display panel
provided by an embodiment of the present disclosure. As illustrated
in FIG. 8, the display panel 1 includes an electroluminescent diode
array substrate 2 disposed therein. For example, the display panel
1 can be applied to a display apparatus, for example, the display
apparatus is a mobile phone, a tablet computer, a television, a
display, a notebook computer, a digital picture frame, a navigation
system and any other product or component having a display
function. The embodiments of the display apparatus can be referred
to the above embodiments of the electroluminescent diode array
substrate, which is omitted herein.
[0082] At least one embodiment of the present disclosure further
provides a method of manufacturing an electroluminescent diode
array substrate, and the electroluminescent diode array substrate
is an organic light-emitting diode (OLED) array substrate or a
quantum dot light-emitting diode (QLED) array substrate. The
following is illustrated by taking the electroluminescent diode
array substrate as the organic light-emitting diode (OLED) array
substrate for example.
[0083] For example, FIG. 9 is a flow diagram of a manufacturing
method of an OLED array substrate provided by an embodiment of the
present disclosure. For example, the manufacturing method comprises
the following steps:
[0084] S101: providing a base substrate.
[0085] S102: forming an auxiliary electrode, a pixel definition
layer, a first electrode, a functional layer and a second electrode
on the base substrate, in which forming of the pixel definition
layer includes forming a via hole structure in the pixel definition
layer, the auxiliary electrode is on at least one side of the via
hole structure, and the second electrode is electrically connected
with the auxiliary electrode.
[0086] For example, in the manufacturing method provided by at
least one embodiment of the present disclosure, the upper surface
of the auxiliary electrode on at least one side of the via hole
structure is higher than the upper surface of the functional layer
in the via hole structure, in this way, the auxiliary electrode is
electrically connected to the second electrode through the portion
of the auxiliary electrode that higher than the upper surface of
the functional layer in the via hole structure.
[0087] For example, a planarization layer is formed before forming
the pixel definition layer, and the via hole structure extends from
the pixel definition layer to penetrate through the planarization
layer, and the pixel definition layer is used for isolating two
sub-pixel units adjacent to each other.
[0088] For example, the second electrode is electrically connected
with the auxiliary electrodes by the plurality of via hole
structures, so that the second electrode is connected in parallel
with the auxiliary electrodes respectively. In addition, the second
electrode connected in parallel with the auxiliary electrodes
through the plurality of via hole structures increases the
thickness of the second electrode, which is equivalent to
increasing of the cross-sectional area of the second electrode, and
the resistance of the second electrode 206 is further reduced.
[0089] For example, the pixel definition layer is made of an
organic insulating material (for example, an acrylic resin) or an
inorganic insulating material (for example, silicon nitride SiNx or
silicon oxide SiOx), the pixel definition layer has an insulating
property. The pixel definition layer may be considered as the
insulating structure disposed between the second electrode and the
auxiliary electrode.
[0090] For example, the manufacturing method provided by at least
one embodiment of the present disclosure further includes forming a
conductive polymer layer in the via hole structure, and the second
electrode is electrically connected with the auxiliary electrode by
the conductive polymer layer. In a case where the second electrode
is directly connected to the auxiliary electrode, the second
electrode may have a segment difference, that is, the second
electrode is broken. The conductive polymer layer is arranged in
the via hole structure to raise the functional layer so as to
prevent the second electrode from breaking.
[0091] For example, the thickness of the conductive polymer layer
is larger than the thickness of the planarization layer, and the
thickness of the conductive polymer layer is smaller than the sum
of the thickness of the planarization layer and the thickness of
the pixel definition layer.
[0092] For example, the upper surface of the conductive polymer
layer is flush with an upper surface of the pixel definition layer,
in this way, the risk that the second electrode having a segment
difference is basically eliminated.
[0093] For example, the thickness of the conductive polymer layer
is from about 2 .mu.m to about 5.7 .mu.m. For example, the
thickness of the conductive polymer layer is 2 .mu.m, 3 .mu.m, 4
.mu.m or 5 .mu.m, etc.
[0094] For example, the conductivity of the conductive polymer
layer is greater than 10.sup.-6 S/m, which ensures that the
auxiliary electrode is electrically connected with the second
electrode.
[0095] For example, the material of the conductive polymer layer
comprises at least one of polypyrrole, polyphenylene sulfide,
polyphthalocyanine, polyaniline and polythiophene.
[0096] For example, in the manufacturing method provided by the
embodiment of the present disclosure, the conductive polymer layer
is formed by an inkjet printing method.
[0097] For example, in an embodiment of the present disclosure, the
thickness of the functional layer is from about 100 nm to about 300
nm, for example, the thickness of the functional layer is 100 nm,
200 nm or 300 nm, etc.
[0098] For example, the thickness of auxiliary electrode 202 is
from about 0.5 .mu.m to about 1 .mu.m, such as 0.5 .mu.m, 0.6
.mu.m, 0.7 .mu.m, 0.8 .mu.m, 0.9 .mu.m or 1 .mu.m, etc.
[0099] For example, the thickness of planarization layer 203 is
from about 1 .mu.m to about 3 .mu.m, such as 1 .mu.m, 2 .mu.m or 3
.mu.m, etc.
[0100] For example, the thickness of the pixel definition layer 208
is from about 1 .mu.m to about 3 .mu.m, such as 1 .mu.m, 2 .mu.m or
3 .mu.m, etc.
[0101] For example, thickness of the first electrode 204 is from
about 200 .mu.m to about 300 .mu.m, for example, 200 .mu.m, 250
.mu.m, or 300 .mu.m, etc.
[0102] For example, the thickness of the second electrode 206 is
from about 100 .mu.m to about 200 .mu.m, for example, 100 .mu.m,
150 .mu.m, or 200 .mu.m, etc.
[0103] The electroluminescent diode array substrate, the method of
manufacturing the electroluminescent diode array substrate and the
display panel provided by the embodiments of the present disclosure
have at least one of the following beneficial effects:
[0104] (1) in the electroluminescent diode array substrate provided
by at least one embodiment of the present disclosure, by changing
the structural design of the auxiliary electrode, the electrical
connection between the second electrode and the auxiliary electrode
is ensured, in this way, the auxiliary electrode electrically
connected with the second electrode increases the equivalent
thickness of the second electrode.
[0105] (2) in the electroluminescent diode array substrate provided
by at least one embodiment of the present disclosure, the
resistance of the second electrode is reduced, and the problem that
the large voltage drop caused by the large resistance of the second
electrode in a case where the second electrode made of metallic
silver with a thinner thickness is avoided.
[0106] (3) in the electroluminescent diode array substrate provided
by at least one embodiment of the present disclosure, the problem
of damaging an organic light-emitting display panel due to the
large voltage drop is avoided.
[0107] The following points need to be explained:
[0108] (1) The drawings of the embodiments of the present
disclosure are only related to the structures related to the
embodiments of the present disclosure, and other structures can
refer to general designs.
[0109] (2) For clarity, in the drawings for describing the
embodiments of the present disclosure, a thickness of a layer or a
thickness of a region is exaggerated or reduced, that is, these
drawings are not drawn according to an actual scale. It should be
understood that: in a case where an element such as a layer, a
film, a region or a substrate is referred to as being disposed "on"
or "beneath" another element, the element may be "directly"
disposed "on" or "beneath" another element, or an intermediate
element may be provided.
[0110] (3) In the absence of conflict, the embodiments of the
present disclosure and the features in the embodiments can be
combined with each other to obtain new embodiments.
[0111] What is described above is related to the illustrative
embodiments of the disclosure only and not limitative to the scope
of the disclosure. Therefore, the scopes of the disclosure are
defined by the accompanying claims.
* * * * *