U.S. patent application number 16/254264 was filed with the patent office on 2019-08-15 for apparatus and method of manufacturing oxide film and display apparatus including the oxide film.
The applicant listed for this patent is LG Display Co., Ltd.. Invention is credited to JaeHyeon PARK, Jaeyoon PARK, KiHoon PARK, PilSang YUN.
Application Number | 20190249299 16/254264 |
Document ID | / |
Family ID | 65200614 |
Filed Date | 2019-08-15 |
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United States Patent
Application |
20190249299 |
Kind Code |
A1 |
PARK; Jaeyoon ; et
al. |
August 15, 2019 |
Apparatus and Method of Manufacturing Oxide Film and Display
Apparatus Including the Oxide Film
Abstract
Disclosed are an apparatus and method of manufacturing an oxide
film having a uniform composition and thickness. The apparatus
includes a lower chamber including a reaction space, a susceptor to
support a substrate, a chamber lid including gas injection ports, a
gas distribution module between the chamber lid and the susceptor
and connected to the gas injection ports, a first source container
module comprising a first source gas having a first vapor pressure,
a first carrier gas supply module supplying a first carrier gas to
the first source container module, a second source container module
comprising a second source gas having a second vapor pressure, a
force gas supply module supplying a force gas, and a reactant gas
supply module supplying a reactant gas.
Inventors: |
PARK; Jaeyoon; (Paju-si,
KR) ; PARK; JaeHyeon; (Paju-si, KR) ; PARK;
KiHoon; (Paju-si, KR) ; YUN; PilSang;
(Paju-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
LG Display Co., Ltd. |
Seoul |
|
KR |
|
|
Family ID: |
65200614 |
Appl. No.: |
16/254264 |
Filed: |
January 22, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 16/4481 20130101;
C23C 16/4485 20130101; H01L 27/1262 20130101; C23C 16/4412
20130101; C23C 16/45561 20130101; C23C 16/40 20130101; C23C 16/407
20130101; C23C 16/45523 20130101 |
International
Class: |
C23C 16/455 20060101
C23C016/455; C23C 16/40 20060101 C23C016/40; C23C 16/44 20060101
C23C016/44; H01L 27/12 20060101 H01L027/12 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 14, 2018 |
KR |
10-2018-0018599 |
Claims
1. An apparatus for manufacturing an oxide film, the apparatus
comprising: a lower chamber including a reaction space; a susceptor
in the reaction space, the susceptor configured to support a
substrate; a chamber lid configured to seal the reaction space, the
chamber lid including a first gas injection port and one or more
second gas injection ports; a gas distribution module between the
susceptor and the chamber lid, the gas distribution module
connected to the first gas injection port and the one or more
second gas injection ports; a first source container module
connected to the first gas injection port, the first source
container module comprising a first source gas having a first vapor
pressure; a first carrier gas supply module connected to the first
source container module, the first carrier gas supply module
configured to supply a first carrier gas to the first source
container module such that the first source gas is injected into
the reaction space via the first gas injection port; a second
source container module connected to the first gas injection port,
the second source container module comprising a second source gas
having a second vapor pressure that is different from the first
vapor pressure; a force gas supply module connected to the second
source container module, the force gas supply module configured to
supply a force gas to a gas path between the second source
container module and the first gas injection port such that the
second source gas is injected into the reaction space via the first
gas injection port; and a reactant gas supply module connected to
the one or more second gas injection ports, the reactant gas supply
module configured to supply a reactant gas into the reaction
space.
2. The apparatus of claim 1, further comprising: a purge gas supply
module configured to supply a purge gas into the reaction space via
the first gas injection port.
3. The apparatus of claim 1, wherein a flow rate of the first
source gas supplied to the first gas injection port is controlled
by the first carrier gas, and wherein a density of the second
source gas supplied to the first gas injection port is controlled
by the force gas.
4. The apparatus of claim 1, wherein the second vapor pressure is
greater than the first vapor pressure.
5. The apparatus of claim 4, wherein the first vapor pressure is
less than 200 Torr, and wherein the second vapor pressure is equal
to or greater than 200 Torr.
6. The apparatus of claim 4, further comprising: a gas injection
pipe connected to the first gas injection port; and a source gas
plumbing line connected between the gas injection pipe and each of
the first source container module and the second source container
module
7. The apparatus of claim 6, wherein the source gas plumbing line
comprises: a first branch pipe connected to the gas injection pipe;
a first source gas supply pipe connected between the first branch
pipe and the first source container module; and a second source gas
supply pipe connected between first branch pipe and the second
source container module, and wherein the force gas supply module is
configured to supply the force gas to the second source gas supply
pipe.
8. The apparatus of claim 7, wherein the first source container
module comprises a first source container including an input port
configured to supply the first carrier gas into the first source
container and an output port connected to the first source gas
supply pipe and the output port configured to output the first
source gas, the first source container configured to vaporize a
first organic material contained within the first source container
into the first source gas, and wherein the first carrier gas supply
module comprises: a first carrier gas supply pipe connected to the
input port of the first source container; a first carrier gas
supply source configured to supply the first carrier gas to the
first carrier gas supply pipe; and a first flow rate control member
installed in the first carrier gas supply pipe to control the flow
rate of the first carrier gas.
9. The apparatus of claim 7, wherein the second source container
module comprises: a second source container including an output
port connected to the second source gas supply pipe, the second
source container configured to vaporize a second organic material
contained within the second source container into the second source
gas; and a second flow rate control member installed between the
output port of the second source container and the second source
gas supply pipe, and wherein the force gas supply module comprises:
a force gas supply pipe connected to the second source gas supply
pipe; a force gas supply source configured to supply the force gas
to the force gas supply pipe; and a third flow rate control member
installed in the force gas supply pipe to control the flow rate of
the force gas supply pipe.
10. The apparatus of claim 9, wherein the force gas supply pipe is
closer to the second flow rate control member than the gas
injection pipe.
11. The apparatus of claim 1, wherein the reactant gas comprises
oxygen (O.sub.2), and the gas distribution module is configured to
generate a plasmatic reactant gas from the reactant gas and
distribute the plasmatic reactant gas to the substrate in the
reaction space.
12. The apparatus of claim 1, wherein the reactant gas comprises
ozone (O.sub.3) or water vapor (H.sub.2O), and wherein the
susceptor comprises a substrate heating apparatus configured to
heat the substrate.
13. The apparatus of claim 11, wherein the first source gas
comprises one material of diethylzinc (DEZn), triisobutylgallium
(TIBGa), triethylgallium (TEGa), triethylindium (TEIn),
trimethylindium (TMIn), and (3-dimethylaminopropyl)dimethylindium
(DADI), and wherein the second source gas comprises
trimethylgallium (TMGa) or dimethylzinc (DMZn).
14. The apparatus of claim 7, further comprising: a third source
container module connected to the first gas injection port, the
third source container module configured to provide a third source
gas having a third vapor pressure that is different from the second
vapor pressure; and a second carrier gas supply module connected to
the third source container module, the second carrier gas supply
module configured to supply a second carrier gas to the third
source container module such that the third gas is injected into
the reaction space via the first gas injection port, wherein a flow
rate of the third source gas supplied to the first gas injection
port is controlled by the second carrier gas.
15. The apparatus of claim 14, wherein the first source gas
comprises one material of diethylzinc (DEZn), triisobutylgallium
(TIBGa), triethylgallium (TEGa), triethylindium (TEIn),
trimethylindium (TMIn), and (3-dimethylaminopropyl)dimethylindium
(DADI), the second source gas comprises trimethylgallium (TMGa) or
dimethylzinc (DMZn), and the third source gas comprises
tetraethyltin (TESn) or tetramethyltin (TMSn).
16. The apparatus of claim 14, wherein the first source gas
comprises one material of (3-dimethylaminopropyl) dimethylindium
(DADI), triethylindium (TEIn), and trimethylindium (TMIn), wherein
the second source gas comprises dimethylzinc (DMZn), and wherein
the third source gas comprises tetraethyltin (TESn) or
tetramethyltin (TMSn).
17. The apparatus of claim 14, wherein each of the first source
gas, the second source gas, and the third source gas is distributed
to the substrate via the apparatus for a process time equal to or
less than one second.
18. The apparatus of claim 14, further comprising: a fourth source
container module connected to the first gas injection port, the
fourth source container module configured to provide a fourth
source gas having a fourth vapor pressure that is different from
the second vapor pressure; and a third carrier gas supply module
configured to supply a third carrier gas to the fourth source
container module such that the fourth gas is injected into the
reaction space via the first gas injection port, wherein a flow
rate of the fourth source gas supplied to the first gas injection
port is controlled by the third carrier gas.
19. The apparatus of claim 18, wherein the first source gas
comprises one material of diethylzinc (DEZn), triisobutylgallium
(TIBGa), and triethylgallium (TEGa), wherein the second source gas
comprises trimethylgallium (TMGa) or dimethylzinc (DMZn), wherein
the third source gas comprises one material of
(3-dimethylaminopropyl) dimethylindium (DADI), triethylindium
(TEIn), and trimethylindium (TMIn), and the fourth source gas
comprises tetraethyltin (TESn) or tetramethyltin (TMSn).
20. The apparatus of claim 18, wherein each of the first source
gas, the second source gas, the third source gas, and the fourth
source gas is distributed to the substrate via the apparatus for a
process time equal to or less than one second.
21. A method of manufacturing an oxide film, the method comprising:
generating a first source gas having a first vapor pressure using a
first source container module that is connected to a first gas
injection port of a process chamber; generating a second source gas
having a second vapor pressure different from the first vapor
pressure using a second source container module that is connected
to the first gas injection port; supplying a first carrier gas to
the first source container module such that the first source gas is
supplied to the first gas injection port; supplying a force gas to
a gas path between the second source container module and the first
gas injection port such that the second source gas is supplied to
the first gas injection port; supplying a reactant gas to one or
more second gas injection ports of the process chamber; supplying a
purge gas to the first gas injection port; and distributing the
first source gas, the second source gas, the reactant gas, and the
purge gas to a substrate in the process chamber.
22. The method of claim 21, wherein a flow rate of the first source
gas supplied to the first gas injection port is controlled by the
first carrier gas, and wherein a density of the second source gas
supplied to the first gas injection port is controlled by the force
gas.
23. The method of claim 21, wherein the second vapor pressure is
higher than the first vapor pressure.
24. The method of claim 23, wherein the first vapor pressure is
less than 200 Torr, and wherein the second vapor pressure is equal
to or more than 200 Torr.
25. The method of claim 23, wherein the first source gas is
supplied to the first gas injection port through a first source gas
supply pipe connected to the first source container module and a
gas injection pipe connected to the first source gas supply pipe
using the first carrier gas, wherein the second source gas is
supplied to the second gas injection port through a second source
gas supply pipe connected to the second source container module and
the gas injection pipe connected to the second source gas supply
pipe, and wherein the force gas is supplied to the second source
gas supply pipe.
26. The method of claim 25, wherein a flow rate of the first source
gas supplied from the first source container module to the first
source gas supply pipe is controlled by a first flow rate control
member that is configured to supply the first carrier gas to the
first source container module, wherein a flow rate of the second
source gas supplied from the second source container module to the
second source gas supply pipe is controlled by a second flow rate
control member installed in the second source gas supply pipe, and
wherein the force gas is supplied to the second source gas supply
pipe through a force gas supply pipe that is closer to the second
flow rate control member than the gas injection pipe.
27. The method of claim 25, further comprising: generating a third
source gas having a third vapor pressure that is different from the
second vapor pressure using a third source container module that is
connected to the first gas injection port; and supplying a second
carrier gas to the third source container module such that the
third source gas is supplied to the first gas injection port via
the second carrier gas, wherein a flow rate of the third source gas
that is supplied to the first gas injection port is controlled by
the second carrier gas, and wherein the distribution of the first
source gas, the second source gas, the reactant gas, and the purge
gas comprises distributing the third source gas to the
substrate.
28. The method of claim 27, further comprising: generating a fourth
source gas having a fourth vapor pressure different from the second
vapor pressure using a fourth source container module connected to
the first gas injection port; and supplying a third carrier gas to
the fourth source container module such that the fourth source gas
is supplied to the first gas injection port via the third carrier
gas, wherein a flow rate of the fourth source gas that is supplied
to the first gas injection port is controlled by the third carrier
gas, and wherein the distribution of the first source gas, the
second source gas, the reactant gas, and the purge gas comprises
distributing the fourth source gas to the substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of Republic of Korea
Patent Application No. 10-2018-0018599 filed on Feb. 14, 2018,
which is hereby incorporated by reference in its entirety.
BACKGROUND
Field of Technology
[0002] The present disclosure relates to an apparatus and method of
manufacturing an oxide film and a display apparatus including the
oxide film.
Discussion of the Related Art
[0003] An oxide film, an organic metal oxide film, or a metal oxide
film (hereinafter each referred to as an oxide film) is used as a
passivation layer, a transparent conductive layer, or a
semiconductor layer provided on a substrate of a display apparatus,
a solar cell, or a semiconductor light emitting device. The oxide
film may be formed on a substrate through a sputtering deposition
method or an metal-organic chemical vapor deposition (MOCVD)
method. Recently, research and development are being done on an
MOCVD method of uniformly controlling a thickness and a material
composition of an oxide film deposited on a substrate and an
apparatus of manufacturing an oxide film by using the MOCVD
method.
[0004] A related art MOCVD method supplies the same carrier gas to
a plurality of source supply apparatuses respectively storing
different organic metal source materials for forming an oxide film
and injects a plurality of source gases supplied from the plurality
of source supply apparatuses into a reaction chamber, thereby
forming the oxide film on a substrate.
[0005] However, the related art MOCVD method needs a process of
injecting and purging a source gas for a relatively long time, for
depositing (or adsorbing) an oxide film on a substrate having a
size corresponding to a fifth generation substrate (for example,
1100 mm.times.1250 mm) or more to have a uniform composition and
thickness, and thus, productivity is reduced due to a low
deposition speed. For this reason, it is difficult to apply the
related art MOCVD method to a process of manufacturing a large-size
substrate (particularly, a process of manufacturing a display
apparatus).
[0006] Moreover, vapor pressures of a plurality of source gases for
forming an oxide film have different values. For example, some of
the plurality of source gases may have a vapor pressure of several
Torr to tens of Torr, and the other source gases may have a vapor
pressure of hundreds of Torr (1 Torr=101325/760 Pa). In a case
where an oxide film is formed on a substrate by injecting each of a
plurality of source gases having different vapor pressures into a
reaction chamber as a carrier gas, it is difficult to finely
control an injection rate (or a source flow rate) of each of the
plurality of source gases injected into the reaction chamber. For
example, in a case where an injection rate of each of the source
gases having different vapor pressures is controlled by using the
same carrier gas, an injection rate (or a source flow rate) of one
source gas injected into the reaction chamber may differ by
hundreds of times from an injection rate of another source gas
injected there into, and due to this, it is unfeasible to uniformly
control the flow rates of source gases, and particularly, it is
impossible to control a flow rate and/or a density of a source gas
having a vapor pressure of hundreds of Torr.
[0007] Therefore, due to the non-uniform injection rates of source
gases having different vapor pressures, a composition or a
thickness of an oxide film formed on a substrate is
non-uniform.
SUMMARY
[0008] Accordingly, the present disclosure is directed to providing
an apparatus and method of manufacturing an oxide film and a
display apparatus including the oxide film that substantially
obviate one or more problems due to limitations and disadvantages
of the related art.
[0009] An aspect of the present disclosure is directed to providing
an apparatus and method of manufacturing an oxide film, which form
an oxide film, including a plurality of organic metals having
different vapor pressures, on a substrate to have a uniform
composition and thickness.
[0010] Another aspect of the present disclosure is directed to
providing a display apparatus including an oxide film having a
uniform composition and thickness.
[0011] Additional advantages and features of the disclosure will be
set forth in part in the description which follows and in part will
become apparent to those having ordinary skill in the art upon
examination of the following or may be learned from practice of the
disclosure. The objectives and other advantages of the disclosure
may be realized and attained by the structure particularly pointed
out in the written description and claims hereof as well as the
appended drawings.
[0012] To achieve these and other advantages and in accordance with
the purpose of the disclosure, as embodied and broadly described
herein, there is provided an apparatus for manufacturing an oxide
film, and a method of manufacturing an oxide film according to the
independent claims. Further embodiments are described in the
dependent claims. In one or more embodiments, there is provided an
apparatus for manufacturing an oxide film, the apparatus
comprising: a lower chamber including a reaction space; a susceptor
in the reaction space, the susceptor configured to support a
substrate; a chamber lid configured to seal the reaction space, the
chamber lid including a first gas injection port and one or more
second gas injection ports; a gas distribution module between the
susceptor and the chamber lid, the gas distribution module
connected to the first gas injection port and the one or more
second gas injection ports; a first source container module
connected to the first gas injection port, the first source
container module comprising a first source gas having a first vapor
pressure; a first carrier gas supply module connected to the first
source container module, the first carrier gas supply module
configured to supply a first carrier gas to the first source
container module such that the first source gas is injected into
the reaction space via the first gas injection port; a second
source container module connected to the first gas injection port,
the second source container module comprising a second source gas
having a second vapor pressure that is different from the first
vapor pressure; a force gas supply module connected to the second
source container module, the force gas supply module configured to
supply a force gas to a gas path between the second source
container module and the first gas injection port such that the
second source gas is injected into the reaction space via the first
gas injection port; and a reactant gas supply module connected to
the one or more second gas injection ports, the reactant gas supply
module configured to supply a reactant gas into the reaction
space.
[0013] In one embodiment, a method of manufacturing an oxide film
comprises: generating a first source gas having a first vapor
pressure using a first source container module that is connected to
a first gas injection port of a process chamber; generating a
second source gas having a second vapor pressure different from the
first vapor pressure using a second source container module that is
connected to the first gas injection port; supplying a first
carrier gas to the first source container module such that the
first source gas is supplied to the first gas injection port;
supplying a force gas to a gas path between the second source
container module and the first gas injection port such that the
second source gas is supplied to the first gas injection port;
supplying a reactant gas to one or more second gas injection ports
of the process chamber; supplying a purge gas to the first gas
injection port; and distributing the first source gas, the second
source gas, the reactant gas, and the purge gas to a substrate in
the process chamber.
[0014] In addition to the aforesaid objects of the present
invention, other features and advantages of the present invention
will be described below, but will be clearly understood by those
skilled in the art from descriptions below.
[0015] It is to be understood that both the foregoing general
description and the following detailed description of the present
disclosure are exemplary and explanatory and are intended to
provide further explanation of the disclosure as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The accompanying drawings, which are included to provide a
further understanding of the disclosure and are incorporated in and
constitute a part of this application, illustrate embodiments of
the disclosure and together with the description serve to explain
the principle of the disclosure. In the drawings:
[0017] FIG. 1 is a diagram illustrating an apparatus for
manufacturing an oxide film according to an embodiment of the
present disclosure;
[0018] FIG. 2 is a diagram illustrating a process chamber
illustrated in FIG. 1 according to an embodiment of the present
disclosure;
[0019] FIG. 3 is a diagram illustrating a method of manufacturing
an oxide film according to an embodiment of the present
disclosure;
[0020] FIG. 4 is a diagram illustrating a film forming mechanism of
an oxide film based on a method of manufacturing an oxide film
according to an embodiment of the present disclosure;
[0021] FIG. 5 is a diagram for describing a method of manufacturing
an oxide film according to another embodiment of the present
disclosure;
[0022] FIG. 6 is a diagram for describing a method of manufacturing
an oxide film according to another embodiment of the present
disclosure;
[0023] FIG. 7 is a diagram illustrating a film forming mechanism of
an oxide film based on a method of manufacturing an oxide film
according to another embodiment of the present disclosure;
[0024] FIG. 8 is a diagram illustrating a process chamber according
to another embodiment in an apparatus for manufacturing an oxide
film according to an embodiment of the present disclosure;
[0025] FIG. 9 is a cross-sectional view of a thin film transistor
according to an embodiment of the present disclosure;
[0026] FIG. 10 is another cross-sectional view of a thin film
transistor according to an embodiment of the present disclosure;
and
[0027] FIG. 11 is a schematic cross-sectional view of a display
apparatus according to an embodiment of the present disclosure.
DETAILED DESCRIPTION
[0028] Reference will now be made in detail to the exemplary
embodiments of the present disclosure, examples of which are
illustrated in the accompanying drawings. Wherever possible, the
same reference numbers will be used throughout the drawings to
refer to the same or like parts. Advantages and features of the
present disclosure, and implementation methods thereof will be
clarified through following embodiments described with reference to
the accompanying drawings. The present disclosure may, however, be
embodied in different forms and should not be construed as limited
to the embodiments set forth herein. Rather, these embodiments are
provided so that this disclosure will be thorough and complete, and
will fully convey the scope of the present disclosure to those
skilled in the art. Furthermore, the present disclosure is only
defined by the scope of the claims.
[0029] A shape, a size, a ratio, an angle, and a number disclosed
in the drawings for describing embodiments of the present
disclosure are merely an example, and thus, the present disclosure
is not limited to the illustrated details. Like reference numerals
refer to like elements throughout. In the following description,
when the detailed description of the relevant known technology is
determined to unnecessarily obscure the important point of the
present disclosure, the detailed description will be omitted.
[0030] In a case where `comprise`, `have`, and `include` described
in the present specification are used, another part may be added
unless `only.about.` is used. The terms of a singular form may
include plural forms unless referred to the contrary.
[0031] In construing an element, the element is construed as
including an error range although there is no explicit
description.
[0032] In describing a position relationship, for example, when a
position relation between two parts is described as `on.about.`,
`over.about.`, `under.about.`, and `next.about.`, one or more other
parts may be disposed between the two parts unless `just` or
`direct` is used.
[0033] In describing a time relationship, for example, when the
temporal order is described as `after.about.`, `subsequent.about.`,
`next.about.`, and `before.about.`, a case which is not continuous
may be included unless `just` or `direct` is used.
[0034] It will be understood that, although the terms "first",
"second", etc. may be used herein to describe various elements,
these elements should not be limited by these terms. These terms
are only used to distinguish one element from another. For example,
a first element could be termed a second element, and, similarly, a
second element could be termed a first element, without departing
from the scope of the present disclosure.
[0035] The term "at least one" should be understood as including
any and all combinations of one or more of the associated listed
items. For example, the meaning of "at least one of a first item, a
second item, and a third item" denotes the combination of all items
proposed from two or more of the first item, the second item, and
the third item as well as the first item, the second item, or the
third item.
[0036] Features of various embodiments of the present disclosure
may be partially or overall coupled to or combined with each other,
and may be variously inter-operated with each other and driven
technically as those skilled in the art can sufficiently
understand. The embodiments of the present disclosure may be
carried out independently from each other, or may be carried out
together in co-dependent relationship.
[0037] Hereinafter, embodiments of an apparatus and a method of
manufacturing an oxide film and a display apparatus including the
oxide film according to the present disclosure will be described in
detail with reference to the accompanying drawings. In adding
reference numerals to elements of each of the drawings, although
the same elements are illustrated in other drawings, like reference
numerals may refer to like elements.
[0038] FIG. 1 is a diagram illustrating an apparatus for
manufacturing an oxide film according to an embodiment of the
present disclosure, and FIG. 2 is a diagram illustrating a process
chamber illustrated in FIG. 1.
[0039] Referring to FIGS. 1 and 2, the apparatus (or an oxide film
manufacturing apparatus) for manufacturing an oxide film according
to an embodiment of the present disclosure may form an oxide film,
a metal oxide film, or an organic metal oxide film (hereinafter
each referred to as an oxide film) on a substrate S disposed in a
reaction space (or a process space), based on a source gas, a
reactant gas, and a purge gas. That is, the oxide film
manufacturing apparatus according to an embodiment of the present
disclosure may form an oxide film having a high density and a high
purity on the substrate S through an organic metal chemical vapor
deposition (MOCVD) process based on the source gas, the reactant
gas, and the purge gas each supplied to the reaction space in a
normal low pressure (or low vacuum) atmosphere. An oxide film
according to an embodiment may be a passivation layer, a
transparent conductive layer, or a semiconductor layer provided on
a substrate of a display apparatus, a solar cell, or a
semiconductor light emitting device. For example, an oxide film for
forming the oxide semiconductor layer may include IGZO(InGaZnO),
IGZTO(InGaZnSnO), IZO(InZnO), or IGO(InGaO). For example, an oxide
film for forming the transparent conductive layer may include
IZO(InZnO). Also, an oxide film for forming the passivation layer
may include GZO(GaZnO).
[0040] The oxide film manufacturing apparatus according to an
embodiment of the present disclosure may include a process chamber
100, a first source container module 210, a first carrier gas
supply module 220, a second source container module 230, a force
gas supply module 240, a reactant gas supply module 250, and a
purge gas supply module 260. Also, the oxide film manufacturing
apparatus according to an embodiment of the present disclosure may
further include a gas injection pipe GIP and a source gas plumbing
line SGPL. Here, the first source container module 210, the first
carrier gas supply module 220, the second source container module
230, and the force gas supply module 240 may configure a source gas
supply unit, the reactant gas supply module 250 may configure a
reactant gas supply unit, and the purge gas supply module 260 may
configure a purge gas supply unit.
[0041] The process chamber 100 may form an oxide film on the
substrate S through a MOCVD process based on a source gas, a
reactant gas, and a purge gas each supplied from the source
container modules 210 and 230 and the gas supply modules 220, 240,
250, and 260 to the reaction space having a low pressure
atmosphere. The process chamber 100 according to an embodiment may
form the oxide film on the substrate S through a source gas
injecting process, a source gas purging process, a reactant gas
injecting process, and a reactant gas purging process. In this
case, a time of each of the source gas injecting process, the
source gas purging process, the reactant gas injecting process, and
the reactant gas purging process may be set to one second or less
(for example, 0.3 seconds to 0.7 seconds) so as to have a
deposition speed of 20 .ANG./min (2.0 nm/min) or more for enhancing
productivity.
[0042] The process chamber 100 according to an embodiment may
include a lower chamber 110, a susceptor 120, a chamber lid 130,
and a gas distribution module 140.
[0043] The lower chamber 110 may provide a reaction space for
depositing an oxide film. The lower chamber 110 may include a gate
valve through which the substrate S moves in or out. Also, the
lower chamber 110 may include an exhaust port 111 for exhausting a
gas from the reaction space.
[0044] The susceptor 120 may be installed in the reaction space of
the lower chamber 110 and may support the substrate S. For example,
the susceptor 120 may support one large-size substrate S, and in
this case, the one large-size substrate S may have a size of a
fifth generation substrate (for example, 1100 mm.times.1250 mm) or
more. As another example, the susceptor 120 may support at least
one substrate S, and in this case, the at least one substrate S may
have a size less than a fifth generation substrate.
[0045] The susceptor 120 according to an embodiment may be
supported by a supporter 121 passing through a center of a floor
surface of the lower chamber 110. A lower portion of the supporter
121 disposed outside the floor surface of the lower chamber 110 may
be sealed by bellows 122 installed outside the floor surface of the
lower chamber 110.
[0046] The chamber lid 130 may be detachably coupled to an upper
portion of the lower chamber 110 with the reaction space there
between and may seal the reaction space of the lower chamber 110. A
sealing member 125 (for example, an O-ring) may be installed
between a wall of the chamber lid 130 and a chamber wall of the
lower chamber 110.
[0047] The chamber lid 130 according to an embodiment may include a
first gas injection port 131 and one or more second gas injection
ports 133.
[0048] The first gas injection port 131 may vertically pass through
a center of the chamber lid 130. The first gas injection port 131
may be supplied with a mixed source gas or a purge gas supplied by
the source container modules 210 and 230, the first carrier gas
supply module 220, and the force gas supply module 240. Here, the
mixed source gas may include a first source gas, a second source
gas, a first carrier gas, and a force gas
[0049] The one or more second gas injection ports 133 may
vertically pass through an edge portion of the chamber lid 130. The
one or more second gas injection ports 133 may be supplied with a
reactant gas from the reactant gas supply module 250. For example,
the chamber lid 130 may include four second gas injection ports 133
which are provided in the edge portion of the chamber lid 130 and
are spaced apart from the first gas injection port 131 by the same
distance, but is not limited thereto. In other embodiments, the
chamber lid 130 may include four or more second gas injection ports
133 which are arranged at regular or irregular intervals for
uniformly distributing a reactant gas to the substrate S.
[0050] The chamber lid 130 according to an embodiment may further
include first to third concave portions 135, 137, and 139 provided
on a rear surface (or a ceiling surface) thereof facing the
susceptor 120.
[0051] The first concave portion 135 may be recessed from a rear
surface other than a rear edge facing the susceptor 120. The first
concave portion 135 may one-dimensionally have a size which is less
than that of a rear surface of the chamber lid 130.
[0052] The second concave portion 137 may be recessed from a
portion other than an edge of the first concave portion 135. The
second concave portion 137 may one-dimensionally have a size which
is less than that of the first concave portion 135.
[0053] The third concave portion 139 may be recessed from a portion
other than an edge of the second concave portion 137. The third
concave portion 139 may one-dimensionally have a size which is less
than that of the second concave portion 137.
[0054] The first gas injection port 131 may be exposed at a center
of the third concave portion 139, and the one or more second gas
injection ports 133 may be exposed at an edge portion of the second
concave portion 137.
[0055] The gas distribution module 140 may be installed in the
chamber lid 130 to face the susceptor 120 and may be connected to
the first gas injection port 131 and the one or more second gas
injection ports 133. Therefore, a space (i.e., the third concave
portion 139) between an inner surface of the chamber lid 130 and
the gas distribution module 140 may form a gas diffusion space GDS
for uniformly diffusing the mixed source gas or the purge gas,
injected through the first gas injection port 131, to the gas
distribution module 140. The gas distribution module 140 may
distribute a gas, corresponding to a predetermined process cycle,
of the mixed source gas supplied via the first gas injection port
131 and the third concave portion 139, the reactant gas supplied
via the one or more second gas injection ports 133, and the purge
gas supplied via the first gas injection port 131 and the third
concave portion 139 to the substrate S. Also, the gas distribution
module 140 may generate a plasmatic reactant gas from the reactant
gas by using plasma and may distribute the plasmatic reactant gas
to the substrate S.
[0056] The gas distribution module 140 according to an embodiment
may include a shower head 141, a conductive plate 143, and an
insulation plate 145.
[0057] The shower head 141 may be coupled to the rear surface of
the chamber lid 130 facing the susceptor 120 and may be connected
to the first gas injection port 131 and the one or more second gas
injection ports 133. For example, the shower head 141 may be
installed in or fixed to an edge portion of the second concave
portion 137 to cover the third concave portion 139 provided on the
rear surface of the chamber lid 130.
[0058] The shower head 141 according to an embodiment may include a
shower body 141a, a plurality of protrusions 141b, a plurality of
first shower holes SH1, a plurality of gas flow paths GFP, one or
more reactant gas injection holes GIH, and a plurality of second
shower holes SH2.
[0059] The shower body 141a may be installed in or fixed to an edge
portion of the second concave portion 137 to cover the third
concave portion 139 provided on the rear surface of the chamber lid
130. The shower body 141a may include a conductive material and may
be electrically grounded through the chamber lid 130, and thus, may
be referred to as a first electrode or a ground electrode.
[0060] The plurality of protrusions 141b may be arranged at certain
intervals on a rear surface (or a gas distribution surface) of the
shower body 141a facing the susceptor 120 and may protrude to the
susceptor 120 to have a certain height from the rear surface of the
shower body 141a. The plurality of protrusions 141b may have a
predetermined interval, based on the uniformity of a gas
distributed to the substrate S. Each of the plurality of
protrusions 141b may be used as the first electrode or the ground
electrode.
[0061] Each of the plurality of first shower holes SH1 may
distribute the mixed source gas, supplied via the first gas
injection port 131 and the gas diffusion space GDS, to the
substrate S. Each of the plurality of first shower holes SH1
according to an embodiment may be provided to vertically pass
through the shower body 141a and the plurality of protrusions 141b
in a thickness direction Z of the shower body 141a.
[0062] The plurality of gas flow paths GFP may be provided inside
the shower body 141a to long extend in a first direction X and may
be arranged at certain intervals in a second direction Y
intersecting the first direction X. In this case, each of the
plurality of first shower holes SH1 may be disposed between two
adjacent gas flow paths of the plurality of gas flow paths GFP so
as not to be connected to each of the plurality of gas flow paths
GFP.
[0063] The one or more reactant gas injection holes GIH may be
provided inside the shower body 141a to overlap the one or more
second gas injection ports 133 and intersect one side and/or the
other side of each of the plurality of gas flow paths GFP. The one
or more reactant gas injection holes GIH may be connected to each
of the plurality of gas flow paths GFP and the one or more second
gas injection ports 133, and thus, may supply the reactant gas,
supplied via the one or more second gas injection ports 133, to
each of the plurality of gas flow paths GFP.
[0064] Each of the plurality of second shower holes SH2 may be
provided adjacent to a corresponding protrusion of the plurality of
protrusions 141b and may distribute the reactant gas, supplied
through a corresponding gas flow path of the plurality of gas flow
paths GFP, to the substrate S. Each of the plurality of second
shower holes SH2 according to an embodiment may be provided
vertical to the shower body 141a in the thickness direction Z of
the shower body 141a so as to be connected to a corresponding gas
flow path, which is adjacent to a corresponding protrusion of the
plurality of protrusions 141b, of the plurality of gas flow paths
GFP. For example, at least four second shower holes SH2 may be
disposed near each of the plurality of protrusions 141b.
[0065] The conductive plate 143 may be electrically insulated to
the shower head 141 and may be disposed on a rear surface of the
shower body 141a of the shower head 141. The conductive plate 143
may include a plurality of through holes 143a. Each of the
plurality of through holes 143a may be provided to have a size
which enables a corresponding protrusion of the plurality of
protrusions 141b to be inserted there into and allows a
corresponding second shower hole of the plurality of second shower
holes SH2 to be exposed and may vertically pass through the
conductive plate 143.
[0066] The conductive plate 143 according to an embodiment may be
electrically connected to a plasma power supply unit 101. The
conductive plate 143 may generate plasms around each of the
plurality of protrusions 141b, based on a plasma power including a
high frequency power or a radio frequency (RF) power selectively
supplied from the plasma power supply unit 101 according to a
predetermined process cycle, thereby making (activating) the
reactant gas, distributed to the substrate S through each of the
plurality of second shower holes SH2, plasmatic. Therefore, the
conductive plate 143 may be referred to as a second electrode or a
plasma electrode for generating plasma. Optionally, the conductive
plate 143 may be electrically grounded through the chamber lid 130,
and in this case, the shower head 141 may be electrically connected
to the plasma power supply unit 101.
[0067] The insulation plate 145 may be disposed between the shower
head 141 and the conductive plate 143 and may electrically insulate
the shower head 141 from the conductive plate 143.
[0068] The insulation plate 145 according to an embodiment may
include one opening 145a overlapping a gas distribution surface of
the shower head 141. In this case, the insulation plate 145 may be
coupled (or fixed) to a rear edge of the shower head 141, and the
conductive plate 143 may be coupled (or fixed) to a rear surface of
the insulation plate 145.
[0069] According to another embodiment, the insulation plate 145
may include a plurality of openings respectively overlapping the
plurality of through holes 143a provided in the conductive plate
143. In this case, the insulation plate 145 may be coupled (or
fixed) to a rear surface of the shower head 141 other than the
plurality of protrusions 141b provided in the shower head 141 and
the plurality of second shower holes SH2 provided near the
plurality of protrusions 141b, and the conductive plate 143 may be
coupled (or fixed) to a rear surface of the insulation plate 145
other than the plurality of openings provided in the insulation
plate 145.
[0070] The process chamber 100 according to an embodiment may
further include a gas diffusion member 150.
[0071] The gas diffusion member 150 may be disposed in the third
concave portion 139 or the gas diffusion space GDS of the chamber
lid 130. The gas diffusion member 150 may control a flow of the
mixed source gas or the purge gas supplied via the first gas
injection port 131 to uniformly diffuse the mixed source gas or the
purge gas to the gas diffusion space GDS, thereby allowing the
mixed source gas or the purge gas to be uniformly supplied to the
gas distribution module 140. The gas diffusion member 150 may be
referred to as a baffle plate.
[0072] The process chamber 100 according to an embodiment may
further include a susceptor driving apparatus 160, an edge frame
170, and a frame supporting part 175.
[0073] The susceptor driving apparatus 160 may raise or lower the
susceptor 120, based on a process sequence corresponding to an
oxide film. The susceptor driving apparatus 160 may raise or lower
the supporter 121 coupled to the susceptor 120.
[0074] The edge frame 170 may cover a front edge portion, including
a front edge portion of the substrate S safely disposed in (or
supported by) the susceptor 120, of the susceptor 120. The edge
frame 170 may define a deposition region of an oxide film deposited
on the substrate S and may prevent a deposited material from being
deposited on the substrate S, the susceptor 120, and the lower
chamber 110 other than the deposition region of the substrate S.
When the susceptor 120 with the substrate S safely disposed therein
is raised to a process position by the susceptor driving apparatus
160, the edge frame 170 may be raised along with the susceptor 120
with being disposed on the susceptor 120.
[0075] The frame supporting part 175 may be installed on a chamber
wall of the lower chamber 110 and may support the edge frame 170
while the substrate S is being loaded/unloaded. The edge frame 170
may be supported by the frame supporting part 175 while the
susceptor 120 is being lowered from a process position to a
loading/unloading position by the susceptor driving apparatus 160,
and thus, may be separated from the susceptor 120 lowered to the
loading/unloading position.
[0076] The gas injection pipe GIP may be connected to the first gas
injection port 131 of the chamber lid 130.
[0077] The source gas plumbing line SGPL may be connected between
the gas injection pipe GIP and each of the first and second source
container modules 210 and 230. The source gas plumbing line SGPL
according to an embodiment may include a first source gas supply
pipe PL1, a second source gas supply pipe PL2, and a first branch
pipe BP1.
[0078] The first source gas supply pipe PL1 may be connected
between the gas injection pipe GIP and the first source container
module 210. One end of the first source gas supply pipe PL1 may be
connected to an end of the gas injection pipe GIP through the first
branch pipe BP1, and the other end of the first source gas supply
pipe PL1 may be connected to the first source container module 210.
In this case, the first source gas supply pipe PL1 may have a
straight shape, but is not limited thereto. In other embodiments,
the first source gas supply pipe PL1 may include at least one
bending portion, based on a position of each of the gas injection
pipe GIP and the first source container module 210.
[0079] The second source gas supply pipe PL2 may be connected
between the gas injection pipe GIP and the second source container
module 230. One end of the second source gas supply pipe PL2 may be
connected to an end of the gas injection pipe GIP through the first
branch pipe BP1, and the other end of the second source gas supply
pipe PL2 may be connected to the second source container module
230. In this case, the second source gas supply pipe PL2 may have a
straight shape, but is not limited thereto. In other embodiments,
the second source gas supply pipe PL2 may include at least one
bending portion, based on a position of each of the gas injection
pipe GIP and the second source container module 230.
[0080] The first source container module 210 may be connected to
the first gas injection port 131 and may provide the first source
gas having a first vapor pressure. That is, the first source
container module 210 may be connected to the first gas injection
port 131 through the first source gas supply pipe PL1 and the first
branch pipe BP1 of the source gas plumbing line SGPL.
[0081] The first source container module 210 according to an
embodiment may include a first source container 211, a first
organic material (or a first organic material precursor) 213, and a
first heating means (not shown).
[0082] The first source container 211 may vaporize the first
organic material 213 into the first source gas and may supply the
first source gas to the first source gas supply pipe PL1, based on
a first carrier gas supplied from the first carrier gas supply
module 220. The first source container 211 according to an
embodiment may include a storage space which stores the first
organic material 213, an input port which is supplied with the
first carrier gas, and an output port which is connected to the
first source gas supply pipe PL1.
[0083] The first organic material 213 may be an organic metal
material having the first vapor pressure among materials of an
oxide film which is used as a passivation layer, a transparent
conductive layer, or a semiconductor layer provided on a substrate
of a display apparatus, a solar cell, or a semiconductor light
emitting device. The first organic material 213 according to an
embodiment may be one material of diethylzinc (DEZn),
triisobutylgallium (TIBGa), triethylgallium (TEGa), triethylindium
(TEIn), trimethylindium (TMIn), and
(3-dimethylaminopropyl)dimethylindium (DADI) each having the first
vapor pressure of less than 200 Torr among a zinc-based material, a
gallium-based material, and an indium-based material as shown in
Table 1.
TABLE-US-00001 TABLE 1 Chemical name Acronym Chemical fomula Vapor
pressure Diethylzinc DEZn (C.sub.2H.sub.5).sub.2Zn 18 Torr@300K
Dimethylzinc DMZn (CH.sub.3).sub.3Zn 400 Torr@300K
Triisobutylgallium TIBGa (C.sub.4H.sub.9).sub.3Ga 0.1 Torr@300K
Triethylgallium TEGa (C.sub.3H.sub.3)Ga 7.5 Torr@300K
Trimethylgallium TMGa (CH.sub.3).sub.3Ga 247 Torr@300K
Triethylindium TEIn (C.sub.2H.sub.3).sub.3In 0.4 Torr@300K
Trimethylindium TMIn (CH.sub.3).sub.3In 3 Torr@300K (3-Dimethyl-
DADI (CH.sub.3).sub.2In(CH.sub.2).sub.3 1.5 Torr@300K aminopropyl)
N(CH.sub.3).sub.2 Dimethylindium
[0084] For example, in a case where a two-element oxide film
including IZO(InZnO) or IGO(InGaO) is formed on the substrate S
through a MOCVD process, the first organic material 213 may be one
material of TEIn, TMIn, and DADI. As another example, in a case
where a two-element oxide film including GZO(GaZnO) is formed on
the substrate S through the MOCVD process, the first organic
material 213 may be one material of DEZn, TIBGa, and TEGa.
[0085] The first heating means may heat the first source container
211 to vaporize the first organic material 213 stored in the first
source container 211. The first heating means according to an
embodiment may include a heating jacket surrounding the first
source container 211.
[0086] The first carrier gas supply module 220 may supply the first
carrier gas to the first source container module 210 so that the
first source gas having the first vapor pressure which is
relatively low is injected into the process chamber 100 at a high
flow rate and a high pressure. That is, since the first source gas
has the first vapor pressure of less than 200 Torr which is
relatively low, a flow rate of the first source gas may not be
controlled by using only a vapor pressure vaporized in the first
source container 211. Therefore, the first carrier gas supply
module 220 may inject the first carrier gas into the first source
container 211 to control a pressure of the first source gas supply
pipe PL1 and a flow rate of the first source gas including the
first carrier gas supplied from the first source container 211 to
the first source gas supply pipe PL1. The first carrier gas may be
an inert gas (for example, argon (Ar) or nitrogen (N.sub.2)).
[0087] The first carrier gas supply module 220 according to an
embodiment may include a first carrier gas supply pipe 221 which is
connected to the input port of the first source container 211, a
first carrier gas supply source 223 which supplies the first
carrier gas to the first carrier gas supply pipe 221, and a first
flow rate control member 225 which is installed in the first
carrier gas supply pipe 221.
[0088] The first flow rate control member 225 may control a flow
rate and pressure of the first carrier gas supplied to the first
source container 211 to control a pressure of the first source gas
supply pipe PL1 and a flow rate of the first source gas which is
vaporized in the first source container 211 and is supplied to the
first source gas supply pipe PL1. Accordingly, a flow rate of the
first source gas supplied to the first gas injection port 131 may
be controlled by the first carrier gas.
[0089] The first flow rate control member 225 may control a flow
rate "FR.sub.source1" and a density "D.sub.source1" of the first
source gas, based on the following Equation (1). The first flow
rate control member 225 according to an embodiment may control a
flow rate "FR.sub.carrier1" of the first carrier gas to control the
flow rate "FR.sub.source1" of the first source gas, thereby
controlling the density "D.sub.source1" of the first source gas,
supplied from the first source container 211 to the first source
gas supply pipe PL1, to 3% or less. To this end, the first flow
rate control member 225 may control the flow rate "FR.sub.carrier1"
of the first carrier gas to hundreds to thousands standard cubic
centimeters per minute (sccm), thereby controlling the flow rate
"FR.sub.source1" of the first source gas to several to tens sccm.
However, the flow rate "FR.sub.source1" and the density
"D.sub.source1" of the first source gas and the flow rate,
"FR.sub.carrier1" of the first carrier gas may vary based on a
composition ratio of the first organic material to an oxide film
provided on the substrate S:
FR source 1 = P source 1 P container 1 .times. FR carrier 1 D
source 1 = FR source 1 FR carrier 1 + FR source 1 .times. 100 ( 1 )
##EQU00001##
[0090] In Equation (1), P.sub.source1 may denote a vapor pressure
of the first source gas, and P.sub.container1 may denote an
internal pressure of the first source container. As seen in
Equation (1), the flow rate "FR.sub.source1" and the density
"D.sub.source1" of the first source gas may be set based on the
vapor pressure "P.sub.source1" of the first source gas, the
internal pressure "P.sub.container1" of the first source container,
and the flow rate "FR.sub.carrier1" of the first carrier gas.
However, the vapor pressure "P.sub.source1" of the first source gas
may correspond to a unique characteristic of the first organic
material, and thus, it is unable to control a temperature in an
actual process and it is difficult to maintain the internal
pressure "P.sub.container1" of the first source container as a
normal pressure of 760 Torr or more without a separate apparatus.
Accordingly, in the present embodiment, the flow rate
"FR.sub.source1" and the density "D.sub.source1" of the first
source gas having the first vapor pressure of 200 Torr or less
which is relatively low may be finely controlled by controlling the
flow rate "FR.sub.carrier1" of the first carrier gas.
[0091] The second source container module 230 may be connected to
the first gas injection port 131 and may provide the second source
gas having a second vapor pressure which differs from the first
vapor pressure. That is, the second source container module 230 may
be connected to the first gas injection port 131 through the second
source gas supply pipe PL2 and the first branch pipe BP1 of the
source gas plumbing line SGPL.
[0092] The second source container module 230 according to an
embodiment may include a second source container 231, a second
organic material (or a second organic material precursor) 233, a
second heating means (not shown), and a second flow rate control
member 235.
[0093] The second source container 231 may vaporize the second
organic material 233 into the second source gas and may supply the
second source gas to the second source gas supply pipe PL2. The
second source container 231 according to an embodiment may include
a storage space which stores the second organic material 233 and an
output port which is connected to the second source gas supply pipe
PL2.
[0094] The second organic material 233 may be a liquid organic
material, having the second vapor pressure which is relatively
higher than the first vapor pressure of the first organic material
213, of the materials of the oxide film which is used as a
passivation layer, a transparent conductive layer, or a
semiconductor layer provided on a substrate of a display apparatus,
a solar cell, or a semiconductor light emitting device. The second
organic material 233 according to an embodiment may be
trimethylgallium (TMGa) or dimethylzinc (DMZn) having the second
vapor pressure of 200 Torr or more among a zinc-based material, a
gallium-based material, and an indium-based material as shown in
Table 1.
[0095] For example, in a case where a two-element oxide film
including IZO(InZnO) is formed on the substrate S through an MOCVD
process, the second organic material 233 may be DMZn, and the first
organic material 213 may be DADI. Here, in the first organic
material 213, DADI may be replaced with TEIn or TMIn.
[0096] As another example, in a case where a two-element oxide film
including IGO(InGaO) is formed on the substrate S through the MOCVD
process, the second organic material 233 may be TMGa, and the first
organic material 213 may be DADI. Here, in the first organic
material 213, DADI may be replaced with TEIn or TMIn.
[0097] As another example, in a case where a two-element oxide film
including GZO(GaZnO) is formed on the substrate S through the MOCVD
process, the second organic material 233 may be TMGa, and the first
organic material 213 may be DEZn. Here, in the second organic
material 233, TMGa may be replaced with DMZn. Also, in the first
organic material 213, DEZn may be replaced with TIBGa or TEGa.
[0098] The second heating means may heat the second source
container 231 to vaporize the second organic material 233 stored in
the second source container 231. The second heating means according
to an embodiment may include a heating jacket surrounding the
second source container 231.
[0099] The second flow rate control member 235 may be installed
between the output port of the second source container 231 and the
second source gas supply pipe PL2.
[0100] The second flow rate control member 235 may control a flow
rate of the second source gas supplied from the second source
container 231 to the second source gas supply pipe PL2. That is,
the second source gas may have a vapor pressure of 200 Torr or
more, and thus, unlike the first source gas having a vapor pressure
of less than 200 Torr which is relatively low, it is required to
control a flow rate by using the second flow rate control member
235. The second flow rate control member 235 according to an
embodiment may control a flow rate of the second source gas,
supplied from the second source container 231 to the second source
gas supply pipe PL2, to several to hundreds sccm, but without being
limited thereto, the flow rate of the second source gas may vary
based on a composition ratio of the second organic material to the
oxide film provided on the substrate S.
[0101] The second flow rate control member 235 may be omitted, and
the second source gas vaporized in the second source container 231
may be supplied to the second source gas supply pipe PL2 through a
carrier gas manner identically to a supply manner corresponding to
the first source gas, but in this case, due to a relatively high
vapor pressure of the second organic material, a flow rate of the
second source gas may have hundreds sccm which is several to
hundreds times a flow rate of the first source gas under the same
condition as the first source gas. Therefore, a density of the
first source gas may be tens to hundreds times difference with a
density of the second source gas. Due to a flow rate difference and
a density difference between the first and second source gases, a
composition of the oxide film provided on the substrate S may be
non-uniform, and in order to uniformly provide the second source
gas having a high density to the substrate S, the second source gas
should be purged (or diluted) for a sufficient time. Therefore, in
the present embodiment, instead of controlling a flow rate of the
second source gas having the relatively high second vapor pressure
by using a carrier gas, a flow rate of the second source gas may be
controlled by using the second flow rate control member 235
installed between the output port of the second source container
231 and the second source gas supply pipe PL2.
[0102] The force gas supply module 240 may supply the force gas to
a gas path between the second source container module 230 and the
first gas injection port 131. That is, the force gas supply module
240 may supply the force gas to the second source gas supply pipe
PL2 to control a flow rate and a pressure (or a plumbing pressure)
of the second source gas supplied through the second source gas
supply pipe PL2 to the first gas injection port 131. Also, the
force gas supply module 240 may mix the force gas with the second
source gas supplied from the second source container module 230 to
the first gas injection port 131, thereby controlling a density of
the second source gas supplied to the first gas injection port
131.
[0103] The force gas supply module 240 according to an embodiment
may include a force gas supply pipe 241, a force gas supply source
243, and a third flow rate control member 245.
[0104] The force gas supply pipe 241 may be connected to the second
source gas supply pipe PL2. In this case, the force gas supply pipe
241 may have a straight shape, but is not limited thereto. In other
embodiments, the force gas supply pipe 241 may include at least one
bending portion, based on a position of each of the second source
gas supply pipe PL2 and the force gas supply source 243.
[0105] One end of the force gas supply pipe 241 may be connected to
the second source gas supply pipe PL2, and the other end of the
force gas supply pipe 241 may be connected to the force gas supply
source 243.
[0106] The one end of the force gas supply pipe 241 according to an
embodiment may be connected to the second source gas supply pipe
PL2 at a portion which is relatively closer to the second flow rate
control member 235 of the second source container module 230 than
the gas injection pipe GIP. For example, a gas path length L
between the second flow rate control member 235 and a connection
portion CP between the second source gas supply pipe PL2 and the
force gas supply pipe 241 may be set to 1 m or less, and a gas path
length between the connection portion CP and the first branch pipe
BP1 connected to the gas injection pipe GIP may be set to 1 m or
more.
[0107] When the gas path length L between the second flow rate
control member 235 and the connection portion CP is less than 1 m,
a density of the second source gas supplied from the second source
container module 230 to the second source gas supply pipe PL2 is be
rapidly controlled, the second source gas may be more smoothly
mixed with the force gas, and a pressure of each of the second
source gas supply pipe PL2 and the gas injection pipe GIP connected
between the connection portion CP and the first gas injection port
131 may increase.
[0108] On the other hand, when the gas path length L between the
second flow rate control member 235 and the connection portion CP
is 1 m or more, the gas path between the second flow rate control
member 235 and the connection portion CP may relatively extend and
a gas path between the connection portion CP and the first gas
injection port 131 may relatively decrease. Accordingly, a flow
rate and a pressure of the force gas should increase for increasing
a pressure of each of the second source gas supply pipe PL2 and the
gas injection pipe GIP connected between the connection portion CP
and the first gas injection port 131, and due to this, it is
difficult to rapidly control a density of the second source gas
supplied to the second source gas supply pipe PL2.
[0109] The connection portion CP may include a second branch pipe
BP2. Therefore, the one end of the force gas supply pipe 241 may be
connected to the second source gas supply pipe PL2 through the
second branch pipe BP2.
[0110] The force gas supply source 243 may supply the force gas to
the force gas supply pipe 241. The force gas supply source 243 may
store the force gas which includes an inert gas (for example, argon
(Ar) or nitrogen (N.sub.2)) or is the same as the first carrier gas
and may supply the stored force gas to the force gas supply pipe
241 at a certain flow rate and a certain pressure.
[0111] The third flow rate control member 245 may be installed in
the force gas supply pipe 241 and may control a pressure of the
second source gas supply pipe PL2 and a flow rate of the force gas
supplied from the force gas supply source 243 to the second source
gas supply pipe PL2 (i.e., the second branch pipe BP2). Therefore,
a flow rate and a density of the second source gas supplied to the
first gas injection port 131 may be controlled by the force gas.
Also, the third flow rate control member 245 may control a pressure
of each of the second source gas supply pipe PL2 and the gas
injection pipe GIP connected between the connection portion CP and
the first gas injection port 131.
[0112] The third flow rate control member 245 may control a flow
rate "FR.sub.force" of the force gas mixed with the second source
gas supplied to the second source gas supply pipe PL2, thereby
control a density "D.sub.source2" of the second source gas supplied
through the second source gas supply pipe PL2 to the gas injection
pipe GIP as in the following Equation (2). The third flow rate
control member 245 according to an embodiment may control the flow
rate "FR.sub.force" of the force gas supplied to the second source
gas supply pipe PL2 to thousands sccm, thereby controlling the
density "D.sub.source2" of the second source gas, supplied through
the second flow rate control member 235 of the second source
container module 230 to the second source gas supply pipe PL2, to
3% or less. Here, the density "D.sub.source2" of the second source
gas based on the flow rate "FR.sub.force" of the force gas is not
limited to 3% or less and may vary based on a composition ratio of
the second organic material to the oxide film provided on the
substrate S:
D source 2 = FR source 2 FR source 2 + FR force .times. 100 ( 2 )
##EQU00002##
[0113] The reactant gas supply module 250 may supply the reactant
gas to the one or more second gas injection ports 133. The reactant
gas supply module 250 may include one or more reactant gas supply
pipes 251 which are respectively connected to the one or more
second gas injection ports 133, a reactant gas supply source 253
which supplies the reactant gas to the one or more reactant gas
supply pipes 251, and a fourth flow rate control member 255 which
is installed in each of the one or more reactant gas supply pipes
251. Here, the reactant gas may include oxygen (O.sub.2). The
fourth flow rate control member 255 may control a flow rate and a
pressure of the reactant gas supplied from the reactant gas supply
source 253 to the one or more reactant gas supply pipes 251.
[0114] The purge gas supply module 260 may supply the purge gas to
the first gas injection port 131. The purge gas supply module 260
according to an embodiment may include a purge gas supply pipe 261
which is connected to the gas injection pipe GIP, a purge gas
supply source 263 which supplies the purge gas to the purge gas
supply pipe 261, and a fifth flow rate control member 265 which is
installed in the purge gas supply pipe 261. Here, the purge gas may
include an inert gas (for example, argon (Ar) or nitrogen
(N.sub.2)) or may be the same as the first carrier gas or the force
gas. The fifth flow rate control member 265 may control a flow rate
and a pressure of the purge gas supplied from the purge gas supply
source 263 to the purge gas supply pipe 261.
[0115] Additionally, the oxide film manufacturing apparatus
according to an embodiment of the present disclosure may further
include a bypass exhaust module 400.
[0116] The bypass exhaust module 400 may selectively exhaust the
first source gas, the second source gas, the reactant gas, and the
purge gas each supplied to the gas injection pipe GIP according to
a predetermined process cycle. The bypass exhaust module 400
according to an embodiment may include a bypass exhaust pipe 410,
an exhaust means 430, and first to fourth valves V1 to V4.
[0117] The bypass exhaust pipe 410 may be connected to the first
source gas supply pipe PL1, the second source gas supply pipe PL2,
the reactant gas supply pipe 251, and the purge gas supply pipe 261
which are adjacent to the gas injection pipe GIP.
[0118] The exhaust means 430 may be connected to an outlet side of
the bypass exhaust pipe 410 and may exhaust a gas supplied through
the bypass exhaust pipe 410. The exhaust means 430 according to an
embodiment may include an exhaust pump.
[0119] The first valve V1 may be installed in the first source gas
supply pipe PL1 adjacent to the first branch pipe BP1 and may
communicate the first source gas supply pipe PL1 with the gas
injection pipe GIP or the bypass exhaust pipe 410. The first valve
V1 according to an embodiment may communicate the first source gas
supply pipe PL1 with the gas injection pipe GIP during only a
source gas injecting process included in a deposition process cycle
corresponding to the oxide film.
[0120] The second valve V2 may be installed in the second source
gas supply pipe PL2 adjacent to the first branch pipe BP1 and may
communicate the second source gas supply pipe PL2 with the gas
injection pipe GIP or the bypass exhaust pipe 410. The second valve
V2 according to an embodiment may communicate the second source gas
supply pipe PL2 with the gas injection pipe GIP during only the
source gas injecting process included in the deposition process
cycle corresponding to the oxide film.
[0121] The third valve V3 may be installed in the reactant gas
supply pipe 251 adjacent to the one or more second gas injection
ports 133 and may communicate the reactant gas supply pipe 251 with
the one or more second gas injection ports 133 or the bypass
exhaust pipe 410. The third valve V3 according to an embodiment may
communicate the reactant gas supply pipe 251 with the one or more
second gas injection ports 133 during only a reactant gas injecting
process included in the deposition process cycle corresponding to
the oxide film.
[0122] The fourth valve V4 may be installed in the purge gas supply
pipe 261 adjacent to the gas injection pipe GIP and may communicate
the purge gas supply pipe 261 with the gas injection pipe GIP or
the bypass exhaust pipe 410. The fourth valve V4 according to an
embodiment may communicate the purge gas supply pipe 261 with the
gas injection pipe GIP during only a purge gas injecting process
included in the deposition process cycle corresponding to the oxide
film.
[0123] The oxide film manufacturing apparatus according to an
embodiment of the present disclosure may indirectly control a flow
rate and a density of the first source gas having the relatively
low first vapor pressure among source gases having different vapor
pressures by using a carrier gas and may directly control a density
of the second source gas having the relatively high second vapor
pressure by using the third flow rate control member 245 and the
force gas, and thus, may increase a pressure of a pipe through
which the mixed source gas flows, based on the force gas, thereby
distributing the mixed source gas to the substrate S at a low
density and a high pressure for a relatively short time (for
example, less than one second). Accordingly, the composition
non-uniformity of the oxide film caused by a density of the second
source gas having the relatively high second vapor pressure may be
minimized, and a deposition speed may increase to 20 .ANG./min or
more, thereby providing an oxide film having thickness uniformity
of 5% or less.
[0124] The oxide film manufacturing apparatus according to an
embodiment of the present disclosure may form a three-element oxide
film, including IGZO(InGaZnO), GZTO(GaZnSnO), or ITZO(InSnZnO)
capable of being used as an oxide semiconductor layer or a
transparent conductive layer, on the substrate S by using an MOCVD
process. In this case, the oxide film manufacturing apparatus
according to an embodiment of the present disclosure may further
include a third source container module 270 and a second carrier
gas supply module 280.
[0125] First, the source gas plumbing line SGPL may further include
a third source gas supply pipe PL3 connected between the third
source container module 270 and the gas injection pipe GIP.
[0126] One end of the third source gas supply pipe PL3 may be
connected to an end of the gas injection pipe GIP through the first
branch pipe BP1, and the other end of the third source gas supply
pipe PL3 may be connected to the third source container module
270.
[0127] The third source container module 270 may be connected to
the first gas injection port 131 and may provide the third source
gas having a third vapor pressure which differs from the second
vapor pressure of the second source gas. That is, the third source
container module 270 may be connected to the first gas injection
port 131 through the third source gas supply pipe PL3 and the first
branch pipe BP1 of the source gas plumbing line SGPL.
[0128] The third source container module 270 according to an
embodiment may include a third source container 271, a third
organic material (or a third organic material precursor) 273, and a
third heating means.
[0129] The third source container 271 may vaporize a third organic
material 273 into a third source gas and may supply the third
source gas to the third source gas supply pipe PL3, based on a
second carrier gas supplied from the second carrier gas supply
module 280. The third source container 271 according to an
embodiment may include a storage space which stores the third
organic material 273, an input port which is supplied with the
second carrier gas, and an output port which is connected to the
third source gas supply pipe PL3.
[0130] The third organic material 273 may be an organic metal
material having the third vapor pressure among materials of an
oxide film which is used as a passivation layer, a transparent
conductive layer, or a semiconductor layer provided on a substrate
of a display apparatus, a solar cell, or a semiconductor light
emitting device. The third organic material 273 according to an
embodiment may be an indium-based material such as DADI, TEIn, or
TMIn in Table 1, or may be a tin-based material such as
tetraethyltin (TESn) or tetramethyltin (TMSn) having the third
vapor pressure of less than 200 Torr as in the following Table
2.
TABLE-US-00002 TABLE 2 Chemical name Acronym Chemical fomula Vapor
pressure Tetraethyltin TESn (C.sub.2H.sub.5).sub.4Sn 0.6 Torr@300K
Tetramethyltin TMSn (CH.sub.3).sub.3Sn 111 Torr@300K
[0131] Referring to Tables 1 and 2, in a case where a three-element
oxide film including IGZO(InGaZnO) is formed on the substrate S
through an MOCVD process, the first organic material 213 may be
DEZn, the second organic material 233 may be TMGa, and the third
organic material 273 may be DADI. Here, in the first organic
material 213, DEZn may be replaced with TIBGa or TEGa. Also, in the
second organic material 233, TMGa may be replaced with DMZn. Also,
in the third organic material 273, DADI may be replaced with TEIn
or TMIn.
[0132] As another example, in a case where a three-element oxide
film including GZTO(GaZnSnO) is formed on the substrate S through
the MOCVD process, the first organic material 213 may be DEZn, the
second organic material 233 may be TMGa, and the third organic
material 273 may be TESn. Here, in the first organic material 213,
DEZn may be replaced with TIBGa or TEGa. Also, in the second
organic material 233, TMGa may be replaced with DMZn. Also, in the
third organic material 273, TESn may be replaced with TMSn.
[0133] As another example, in a case where a three-element oxide
film including ITZO(InSnZnO) is formed on the substrate S through
the MOCVD process, the first organic material 213 may be DADI, the
second organic material 233 may be DMZn, and the third organic
material 273 may be TESn. Here, in the first organic material 213,
DADI may be replaced with TEIn or TMIn. Also, in the third organic
material 273, TESn may be replaced with TMSn.
[0134] The third heating means may heat the third source container
271 to vaporize the third organic material 273 stored in the third
source container 271. The third heating means according to an
embodiment may include a heating jacket surrounding the third
source container 271.
[0135] The second carrier gas supply module 280 may supply the
second carrier gas to the third source container module 270 so that
the third source gas having the third vapor pressure which is
relatively lower than the second vapor pressure of the second
source gas is injected into the process chamber 100 at a high flow
rate and a high pressure. That is, since the third source gas has
the third vapor pressure of less than 200 Torr which is relatively
low, a flow rate of the third source gas may not be controlled by
using only a vapor pressure vaporized in the third source container
271. Therefore, the second carrier gas supply module 280 may inject
the second carrier gas into the third source container 271 to
control a pressure of the third source gas supply pipe PL3 and a
flow rate of the third source gas including the second carrier gas
supplied from the third source container 271 to the third source
gas supply pipe PL3. The second carrier gas may include an inert
gas (for example, argon (Ar) or nitrogen (N.sub.2)), or may be the
same as the first carrier gas.
[0136] The second carrier gas supply module 280 according to an
embodiment may include a second carrier gas supply pipe 281 which
is connected to the input port of the third source container 271, a
second carrier gas supply source 283 which supplies the second
carrier gas to the second carrier gas supply pipe 281, and a sixth
flow rate control member 285 which is installed in the second
carrier gas supply pipe 281.
[0137] The sixth flow rate control member 285 may control a flow
rate and pressure of the second carrier gas supplied to the third
source container 271 to control a pressure of the third source gas
supply pipe PL3 and a flow rate of the third source gas supplied
from the third source container 271 to the third source gas supply
pipe PL3. Accordingly, a flow rate of the third source gas supplied
to the first gas injection port 131 may be controlled by the second
carrier gas.
[0138] The sixth flow rate control member 285 may control a flow
rate "FR.sub.source3" and a density "D.sub.source3" of the third
source gas, based on the following Equation (3). The sixth flow
rate control member 285 according to an embodiment may control a
flow rate "FR.sub.carrier2" of the second carrier gas to control
the flow rate "FR.sub.source3" of the third source gas, thereby
controlling the density "D.sub.source3" of the third source gas,
supplied from the third source container 271 to the third source
gas supply pipe PL3, to 3% or less. To this end, the sixth flow
rate control member 285 may control the flow rate "FR.sub.carrier2"
of the second carrier gas to hundreds to thousands sccm, thereby
controlling the flow rate "FR.sub.source3" of the third source gas
to several to tens sccm. However, the flow rate "FR.sub.source3"
and the density "D.sub.source3" of the third source gas and the
flow rate "FR.sub.carrier2" of the second carrier gas may vary
based on a composition ratio of the third organic material to the
oxide film provided on the substrate S:
FR source 3 = P source 3 P container 3 .times. FR carrier 2 D
source 3 = FR source 3 FR carrier 2 + FR source 3 .times. 100 ( 3 )
##EQU00003##
[0139] In Equation (3), P.sub.source3 may denote a vapor pressure
of the third source gas, and P.sub.container3 may denote an
internal pressure of the third source container. As seen in
Equation (3), the flow rate "FR.sub.source3" and the density
"D.sub.source3" of the third source gas may be set based on the
vapor pressure "P.sub.source3" of the third source gas, the
internal pressure "P.sub.container3" of the third source container,
and the flow rate "FR.sub.carrier2" of the second carrier gas.
However, the vapor pressure "P.sub.source3" of the third source gas
may correspond to a unique characteristic of the third organic
material, and thus, it is unable to control a temperature in an
actual process and it is difficult to maintain the internal
pressure "P.sub.container3" of the third source container as a
normal pressure of 760 Torr or more without a separate apparatus.
Accordingly, in the present embodiment, the flow rate
"FR.sub.source3" and the density "D.sub.source3" of the third
source gas having the third vapor pressure of less than 200 Torr
which is relatively low may be finely controlled by controlling the
flow rate "FR.sub.carrier2" of the second carrier gas.
[0140] The bypass exhaust module 400 of the oxide film
manufacturing apparatus according to an embodiment of the present
disclosure may further include a fifth valve V5.
[0141] First, the bypass exhaust pipe 410 of the bypass exhaust
module 400 may be additionally connected to the third source gas
supply pipe PL3 adjacent to the gas injection pipe GIP.
[0142] The fifth valve V5 may be installed in the third source gas
supply pipe PL3 adjacent to the first branch pipe BP1 and may
communicate the third source gas supply pipe PL3 with the gas
injection pipe GIP or the bypass exhaust pipe 410. The fifth valve
V5 according to an embodiment may communicate the third source gas
supply pipe PL3 with the gas injection pipe GIP during only the
source gas injecting process included in the deposition process
cycle corresponding to the oxide film.
[0143] The oxide film manufacturing apparatus according to an
embodiment of the present disclosure may form a four-element oxide
film, including IGZTO(InGaZnSnO) capable of being used as an oxide
semiconductor layer or a transparent conductive layer, on the
substrate S by using an MOCVD process. In this case, the oxide film
manufacturing apparatus according to an embodiment of the present
disclosure may further include a fourth source container module 290
and a third carrier gas supply module 300.
[0144] First, the source gas plumbing line SGPL may further include
a fourth source gas supply pipe PL4 connected between the fourth
source container module 290 and the gas injection pipe GIP. One end
of the fourth source gas supply pipe PL4 may be connected to an end
of the gas injection pipe GIP through the first branch pipe BP1,
and the other end of the fourth source gas supply pipe PL4 may be
connected to the fourth source container module 290.
[0145] The fourth source container module 290 may be connected to
the first gas injection port 131 and may provide a fourth third
source gas having a fourth vapor pressure which differs from the
second vapor pressure of the second source gas. That is, the fourth
source container module 290 may be connected to the first gas
injection port 131 through the fourth source gas supply pipe PL4
and the first branch pipe BP1 of the source gas plumbing line
SGPL.
[0146] The fourth source container module 290 according to an
embodiment may include a fourth source container 291, a fourth
organic material (or a fourth organic material precursor) 293, and
a fourth heating means. Except for that the fourth source gas
vaporized from a fourth organic material 293 by the fourth heating
means is supplied to the fourth source gas supply pipe PL4 of the
source gas plumbing line SGPL, the fourth source container module
290 having such a configuration is the same as the first source
container module 210 or the third source container module 270, and
thus, its repetitive description is omitted.
[0147] The fourth organic material 293 may be an organic metal
material having the fourth vapor pressure among materials of an
oxide film which is used as a passivation layer, a transparent
conductive layer, or a semiconductor layer provided on a substrate
of a display apparatus, a solar cell, or a semiconductor light
emitting device. The fourth organic material 293 according to an
embodiment may be one material other than the first organic
material 211 and the third organic material 271 among a zinc-based
material, a gallium-based material, and an indium-based material in
Tables 1 and 2.
[0148] For example, in a case where a four-element oxide film
including IGZTO(InGaZnSnO) is formed on the substrate S through an
MOCVD process, the first organic material 213 may be DEZn, the
second organic material 233 may be TMGa, and the third organic
material 273 may be DADI, and the fourth organic material 293 may
be TESn. Here, in the first organic material 213, DEZn may be
replaced with TIBGa or TEGa. Also, in the second organic material
233, TMGa may be replaced with DMZn. Also, in the third organic
material 273, DADI may be replaced with TEIn or TMIn. Also, in the
fourth organic material 293, TESn may be replaced with TMSn.
[0149] The third carrier gas supply module 300 may supply the third
carrier gas to the fourth source container module 290 so that the
fourth source gas having the fourth vapor pressure which is
relatively lower than the second vapor pressure of the second
source gas is injected into the process chamber 100 at a high flow
rate and a high pressure, identically to the first carrier gas
supply module 220 or the second carrier gas supply module 280. That
is, the third carrier gas supply module 300 may inject the third
carrier gas into the fourth source container 291 to control a
pressure of the fourth source gas supply pipe PL4 and a flow rate
of the fourth source gas including the third carrier gas supplied
from the fourth source container 291 to the fourth source gas
supply pipe PL4. The third carrier gas may include an inert gas
(for example, argon (Ar) or nitrogen (N.sub.2)), or may be the same
as the first carrier gas.
[0150] The third carrier gas supply module 300 according to an
embodiment may include a third carrier gas supply pipe 301 which is
connected to an input port of the fourth source container 291, a
third carrier gas supply source 303 which supplies the third
carrier gas to the third carrier gas supply pipe 301, and a seventh
flow rate control member 305 which is installed in the third
carrier gas supply pipe 301.
[0151] The seventh flow rate control member 305 may control a flow
rate and pressure of the third carrier gas supplied to the fourth
source container 291 to control a pressure of the fourth source gas
supply pipe PL4 and a flow rate of the fourth source gas supplied
from the fourth source container 291 to the fourth source gas
supply pipe PL4. Accordingly, a flow rate of the fourth source gas
supplied to the first gas injection port 131 may be controlled by
the third carrier gas.
[0152] The seventh flow rate control member 305 may control a flow
rate and a density "of the fourth source gas similarly to Equation
(3). The seventh flow rate control member 305 according to an
embodiment may control a flow rate of the third carrier gas to
control the flow rate of the fourth source gas, thereby controlling
the density "of the fourth source gas, supplied from the fourth
source container 291 to the fourth source gas supply pipe PL4, to
3% or less. To this end, the seventh flow rate control member 305
may control the flow rate of the third carrier gas to hundreds to
thousands sccm, thereby controlling the flow rate of the fourth
source gas to several to tens sccm. However, the flow rate and the
density of the fourth source gas and the flow rate of the third
carrier gas may vary based on a composition ratio of the fourth
organic material to the oxide film provided on the substrate S.
[0153] The bypass exhaust module 400 of the oxide film
manufacturing apparatus according to an embodiment of the present
disclosure may further include a sixth valve V6.
[0154] First, the bypass exhaust pipe 410 of the bypass exhaust
module 400 may be additionally connected to the fourth source gas
supply pipe PL4 adjacent to the gas injection pipe GIP.
[0155] The sixth valve V6 may be installed in the fourth source gas
supply pipe PL4 adjacent to the first branch pipe BP1 and may
communicate the fourth source gas supply pipe PL4 with the gas
injection pipe GIP or the bypass exhaust pipe 410. The sixth valve
V6 according to an embodiment may communicate the fourth source gas
supply pipe PL4 with the gas injection pipe GIP during only the
source gas injecting process included in the deposition process
cycle corresponding to the oxide film.
[0156] FIG. 3 is a diagram illustrating a method of manufacturing
an oxide film according to an embodiment of the present disclosure,
and FIG. 4 is a diagram illustrating a film forming mechanism of an
oxide film based on a method of manufacturing an oxide film
according to an embodiment of the present disclosure. FIGS. 3 and 4
are diagrams for describing an oxide film manufacturing method
using the oxide film manufacturing apparatus according to an
embodiment of the present disclosure illustrated in FIGS. 1 and
2.
[0157] Referring to FIGS. 3 and 4 in conjunction with FIGS. 1 and
2, the method of manufacturing the oxide film according to an
embodiment of the present disclosure may include: generating the
first source gas having the first vapor pressure by using the first
source container module 210 connected to the first gas injection
port 131 of the process chamber 100; generating the second source
gas having the second vapor pressure differing from the first vapor
pressure by using the second source container module 230 connected
to the first gas injection port 131; supplying the first carrier
gas to the first source container module 210 to supply the first
source gas to the first gas injection port 131; supplying the force
gas to a gas path between the second source container module 230
and the first gas injection port 131 to supply the second source
gas to the first gas injection port 131; supplying the reactant gas
to the one or more second gas injection ports 133 of the process
chamber 100; supplying the purge gas to the first gas injection
port 131; and distributing the first and second source gases, the
reactant gas, and the purge gas to the substrate S.
[0158] Moreover, the method of manufacturing the oxide film
according to an embodiment of the present disclosure may further
include: generating the third source gas having the third vapor
pressure differing from the second vapor pressure by using the
third source container module 270 connected to the first gas
injection port 131; and supplying the second carrier gas to the
third source container module 270 to supply the third source gas to
the first gas injection port 131.
[0159] Moreover, the method of manufacturing the oxide film
according to an embodiment of the present disclosure may further
include: generating the fourth source gas having the fourth vapor
pressure differing from the second vapor pressure by using the
fourth source container module 290 connected to the first gas
injection port 131; and supplying the third carrier gas to the
fourth source container module 290 to supply the fourth source gas
to the first gas injection port 131.
[0160] The method of manufacturing the oxide film according to an
embodiment of the present disclosure may sequentially perform a
source gas injecting process (P1), a source gas purging process
(P2), a reactant gas injecting process (P3), and a reactant gas
purging process (P4) to form an oxide film on the substrate S. For
example, the oxide film may be a two-element oxide film including
IZO(InZnO), IGO(InGaO), or GZO(GaZnO). As another example, the
oxide film may be a three-element oxide film including
IGZO(InGaZnO), GZTO(GaZnSnO), or ITZO(InSnZnO). As another example,
the oxide film may be a four-element oxide film including
IGZTO(InGaZnSnO).
[0161] Hereinafter, the method of manufacturing the oxide film
according to an embodiment of the present disclosure will be
described.
[0162] First, a low pressure atmosphere may be provided in the
reaction space of the process chamber 100.
[0163] Subsequently, the source gas injecting process (P1) of
distributing a mixed source gas MSG to the substrate S to adsorb an
organic material precursor mixed into the mixed source gas MSG onto
the substrate S may be performed for one second or less (for
example, 0.3 seconds to 0.7 seconds). In more detail, during the
source gas injecting process (P1), by supplying the mixed source
gas MSG to the gas distribution module 140 of the process chamber
100 through the gas injection pipe GIP, the mixed source gas MSG
having a low density may be distributed to the substrate S at a
relatively high pressure through the plurality of first shower
holes SH1 provided in the gas distribution module 140 within a
short time. The mixed source gas MSG according to an embodiment may
be a mixed gas of the first source gas including the first carrier
gas and the second source gas including the force gas. According to
another embodiment, the mixed source gas MSG may be a mixed gas of
the first source gas including the first carrier gas, the second
source gas including the force gas, and the third source gas
including the second carrier gas. According to another embodiment,
the mixed source gas MSG may be a mixed gas of the first source gas
including the first carrier gas, the second source gas including
the force gas, the third source gas including the second carrier
gas, and the fourth source gas including the third carrier gas. The
mixed source gas MSG may be uniformly mixed in the gas injection
pipe GIP, based on a flow rate and a pressure of the force gas, and
may be supplied to the gas distribution module 140 at a high
pressure through the first gas injection port 131 of the process
chamber 100.
[0164] Subsequently, the source gas purging process (P2) of
blocking the mixed source gas MSG supplied to the gas distribution
module 140 of the process chamber 100 and distributing a purge gas
PG to the substrate S to purge (or remove) an organic material
precursor remaining in the reaction space of the process chamber
100 without being adsorbed onto the substrate S may be performed
for one second or less (for example, 0.3 seconds to 0.7 seconds).
In more detail, during the source gas purging process (P2), by
supplying the purge gas PG to the gas distribution module 140 of
the process chamber 100 through the gas injection pipe GIP, the
purge gas PG may be distributed to the substrate S through the
plurality of first shower holes SH1 provided in the gas
distribution module 140, thereby purging the mixed source gas MSG
and the organic material precursor remaining in the reaction space
of the process chamber 100 and simultaneously inducing the organic
material precursor to be uniformly adsorbed onto the substrate
S.
[0165] Subsequently, the reactant gas injecting process (P3) of
blocking the purge gas PG supplied to the gas distribution module
140 of the process chamber 100, distributing a reactant gas RG to
the substrate S, and generating plasma to react the reactant gas RG
with the organic material precursor adsorbed onto the substrate S
may be performed for one second or less (for example, 0.3 seconds
to 0.7 seconds). In more detail, during the reactant gas injecting
process (P3), by supplying the reactant gas RG to the gas
distribution module 140 through the second gas injection port 133
of the process chamber 100, the reactant gas RG may be distributed
to the substrate S through the plurality of second shower holes SH2
provided in the gas distribution module 140, and simultaneously, a
plasma power may be applied to the conductive plate 143 of the gas
distribution module 140, thereby generating the plasma around a gas
distribution surface of the gas distribution module 140.
Accordingly, the reactant gas RG distributed to the substrate S
through the plurality of second shower holes SH2 may be activated
by the plasma, and the activated reactant gas may react with the
organic material precursor adsorbed onto the substrate S, whereby a
two-element or three-element oxide film may be formed on the
substrate S.
[0166] Subsequently, the reactant gas purging process (P4) of
blocking the reactant gas RG supplied to the gas distribution
module 140 of the process chamber 100 and simultaneously
distributing the purge gas PG to the substrate S to purge (or
remove) a non-reactant gas remaining in the reaction space of the
process chamber 100 may be performed for one second or less (for
example, 0.3 seconds to 0.7 seconds). In more detail, during the
reactant gas purging process (P4), by supplying the purge gas PG to
the gas distribution module 140 of the process chamber 100 through
the gas injection pipe GIP, the purge gas PG may be distributed to
the substrate S through the plurality of first shower holes SH1
provided in the gas distribution module 140, thereby purging the
non-reactant gas remaining in the reaction space of the process
chamber 100.
[0167] The method of manufacturing the oxide film by using the
oxide film manufacturing apparatus according to an embodiment of
the present disclosure may indirectly control a flow rate and a
density of a source gas having a relatively low vapor pressure by
using a carrier gas and may directly control a density of a source
gas having a relatively high vapor pressure by using the third flow
rate control member 245 and the force gas, and thus, may increase a
pressure of a pipe through which the mixed source gas flows, based
on the force gas, thereby distributing the mixed source gas to the
substrate S at a low density and a high pressure for a relatively
short time (for example, less than one second). Accordingly, the
composition non-uniformity of the oxide film caused by a flow rate
and a density of the source gas having a relatively high vapor
pressure may be minimized, and an oxide film which is high in
density and purity may be formed at a deposition speed of 20
.ANG./min or more, thereby providing an oxide film having thickness
uniformity of 5% or less.
[0168] Optionally, in the method of manufacturing the oxide film
according to an embodiment of the present disclosure, as
illustrated in FIG. 5, the reactant gas RG may be supplied during
the source gas purging process (P2) and the reactant gas injecting
process (P3). In this case, the method of manufacturing the oxide
film according to an embodiment of the present disclosure may
shorten a time for which an oxygen atmosphere for generating oxygen
plasma is formed in the reaction space in the reactant gas
injecting process (P3), thereby more increasing a deposition
speed.
[0169] Moreover, in the method of manufacturing the oxide film
according to an embodiment of the present disclosure, as
illustrated in FIGS. 6 and 7, one integration process (P2)
including the source gas purging process, the reactant gas
injecting process, and the reaction gas purging process each
performed after the source gas injecting process (P1) may be
performed. In this case, in the method of manufacturing the oxide
film according to an embodiment of the present disclosure, an oxide
film may be formed on a substrate by using only the source gas
injecting process (P1) and the integration process (P2), and thus,
a process time may be considerably shortened, thereby more
increasing a deposition speed. The method of manufacturing the
oxide film according to an embodiment of the present disclosure may
be applied to a process of forming an oxide film used as a
transparent conductive layer rather than a process of forming an
oxide film used as an oxide semiconductor layer requiring a high
density and a high purity.
[0170] FIG. 8 is a diagram illustrating a process chamber according
to another embodiment in an apparatus for manufacturing an oxide
film according to an embodiment of the present disclosure and
illustrates an example where a structure of each of a gas
distribution module and a susceptor is modified in the process
chamber illustrated in FIGS. 1 and 2. Hereinafter, therefore, only
a gas distribution module and a susceptor will be described, and
repetitive descriptions of the other elements are omitted.
[0171] Referring to FIG. 8 in conjunction with FIG. 1, in the
process chamber according to another embodiment, a susceptor 120
may be installed in a reaction space of a lower chamber 110, and
the susceptor 120 may support a substrate S and may heat the
supported substrate S at a process temperature. The susceptor 120
according to an embodiment may include a substrate heating
apparatus 127.
[0172] The substrate heating apparatus 127 may include a heater
which is embedded into the susceptor 120 to heat the substrate
S.
[0173] The heater may heat the substrate S by using a heating wire
heating manner using a heating wire, an induction heating manner
using an inductive current generated by a coil, or a lamp heating
manner using a lamp heater including a heat generating
filament.
[0174] In the process chamber according to another embodiment, a
gas distribution module 140 may include a shower body 141a, a
plurality of first shower holes SH1, a plurality of gas flow paths
GFP, one or more reactant gas injection holes GIH, and a plurality
of second shower holes SH2. The gas distribution module 140
according to the present embodiment may have a structure where the
plurality of protrusions 141b, the conductive plate 143, and the
insulation plate 145 for generating plasma in gas distribution
module 140 illustrated in FIG. 2 are omitted.
[0175] The shower body 141a may be installed in or fixed to an edge
portion of a second concave portion 137 to cover a third concave
portion 139 provided on a rear surface of a chamber lid 130. The
shower body 141a may include a conductive material and may be
electrically grounded through the chamber lid 130.
[0176] Each of the plurality of first shower holes SH1 may
distribute a mixed source gas, supplied via a first gas injection
port 131 and a gas diffusion space GDS, to the substrate S. The
plurality of first shower holes SH1 according to an embodiment may
be arranged at certain intervals and may be provided to vertically
pass through the shower body 141a in a thickness direction Z of the
shower body 141a.
[0177] The plurality of gas flow paths GFP may be provided inside
the shower body 141a to long extend in a first direction X and may
be arranged at certain intervals in a second direction Y
intersecting the first direction X. In this case, each of the
plurality of first shower holes SH1 may be disposed between two
adjacent gas flow paths of the plurality of gas flow paths GFP so
as not to be connected to each of the plurality of gas flow paths
GFP.
[0178] The one or more reactant gas injection holes GIH may be
provided inside the shower body 141a to overlap the one or more
second gas injection ports 133 and intersect one side and/or the
other side of each of the plurality of gas flow paths GFP. The one
or more reactant gas injection holes GIH may be connected to each
of the plurality of gas flow paths GFP and the one or more second
gas injection ports 133, and thus, may supply the reactant gas,
supplied via the one or more second gas injection ports 133, to
each of the plurality of gas flow paths GFP.
[0179] Each of the plurality of second shower holes SH2 may be
provided adjacent to a corresponding first shower hole of the
plurality of first shower holes SH1 and may distribute a reactant
gas, supplied through a corresponding gas flow path of the
plurality of gas flow paths GFP, to the substrate S. Here, the
reactant gas may be ozone (O.sub.3), water vapor (H.sub.2O), or the
like.
[0180] Each of the plurality of second shower holes SH2 according
to an embodiment may be provided vertical to the shower body 141a
in the thickness direction Z of the shower body 141a so as to be
connected to a corresponding gas flow path, which is adjacent to a
corresponding first shower hole of the plurality of first shower
holes SH1, of the plurality of gas flow paths GFP. For example, at
least four second shower holes SH2 may be disposed near each of the
plurality of first shower holes SH1.
[0181] Except for that a thermal reaction process is performed by
using the heating of a substrate by the substrate heating apparatus
127 instead of a plasma reaction, a method of manufacturing an
oxide film by using an oxide film manufacturing apparatus including
the process chamber according to another embodiment of the present
disclosure is the same as the manufacturing method illustrated in
FIGS. 3 to 7, and thus, its repetitive description is omitted.
[0182] The method of manufacturing the oxide film by using the
oxide film manufacturing apparatus including the process chamber
according to another embodiment of the present disclosure may
provide the same effect as the method of manufacturing the oxide
film by using the oxide film manufacturing apparatus according to
an embodiment of the present disclosure.
[0183] Hereinafter, an embodiment of the present disclosure, a
comparative example 1, and a comparative example 2 will be
described.
[0184] First, in an experiment performed on an embodiment of the
present disclosure, a three-element oxide film including
IGZO(InGaZnO) may have been formed on a substrate by supplying an
indium source gas, a zinc source gas, and a gallium source gas to a
process chamber under a condition shown in the following Table
3.
TABLE-US-00003 TABLE 3 Division In(DADI) Zn(DEZ) Ga(TMGa) Flow rate
of carrier gas (1) 1000 sccm 500 sccm 0 sccm Vapor pressure of
source gas (2) 1.5 Torr 15 Torr 300 Torr Pressure of container (3)
100 Torr 500 Torr 300 Torr Flow rate of source gas (4) 15 sccm 15
sccm 15 sccm Flow rate of force gas (5) 0 0 1000 sccm Density of
source gas 1.5% 2.9% 1.5% [(4)/{(1) + (4) + (5)}]
[0185] As seen in Table 3, based on Equations (1) to (3), by
controlling a flow rate of the carrier gas and a flow rate of the
force gas, flow rates of the indium source gas, the zinc source
gas, and the gallium source gas having different vapor pressures
may have been identically controlled to 15 sccm, a density of the
indium source gas and a density of the gallium source gas may each
have been controlled to 1.5%, and a density of the zinc source gas
may have been controlled to 2.9%. Generally, a density of a source
gas may be reduced for adsorbing an oxide film onto a large-size
substrate and purging the oxide film. Therefore, in an embodiment
of the present disclosure, a three-element source gas having
different vapor pressures may have been supplied to a process
chamber at a relatively high pressure by controlling a density
thereof to a low density of 3% or less, thereby improving the
composition uniformity of an oxide film deposited on the substrate
and increasing a deposition speed to increase productivity.
Accordingly, an embodiment of the present disclosure may be applied
to a process of manufacturing a large-size substrate, and
particularly, may be applied to a process of manufacturing a
display apparatus.
[0186] In an experiment performed on the comparative example 1, by
applying a gas supply method described in the patent documents 1
and 2, a three-element oxide film including IGZO(InGaZnO) may have
been formed on a substrate by supplying the indium source gas, the
zinc source gas, and the gallium source gas to the process chamber
under a condition shown in the following Table 4.
TABLE-US-00004 TABLE 4 Division In(DADI) Zn(DEZ) Ga(TMGa) Flow rate
of carrier gas (1) 1000 sccm 1000 sccm 1000 sccm Vapor pressure of
source gas (2) 1.5 Torr 15 Torr 300 Torr Pressure of container (3)
500 Torr 500 Torr 500 Torr Flow rate of source gas (4) 3 sccm 30
sccm 600 sccm Density of source gas 0.29% 2.9% 37.5% [(4)/{(1) +
(4)}]
[0187] As seen in Table 4, in the comparative example 1, it may be
seen that, since a mixed source gas of the indium source gas, the
zinc source gas, and the gallium source gas having different vapor
pressures is supplied to the process chamber by using a carrier gas
having the same condition, there is ten to two hundred times
difference between the flow rates of the indium source gas, the
zinc source gas, and the gallium source gas, and thus, it may be
seen that the gallium source gas has a density which is relatively
higher than that of each of the indium source gas and the zinc
source gas. Therefore, in the comparative example 1, the
composition non-uniformity of the oxide film formed on the
substrate occurs due to a flow rate difference and a density
difference between source gases. Particularly, unlike an embodiment
of the present disclosure, it may be seen that, in the comparative
example 1, the flow rates of the indium source gas, the zinc source
gas, and the gallium source gas are not controlled to similar flow
rates, and due to this, the comparative example 1 cannot be applied
to a process of forming an oxide film.
[0188] In the comparative example 1, as a result obtained by
controlling other conditions so as to identically control the flow
rate of each of the indium source gas, the zinc source gas, and the
gallium source gas, the flow rate of each of the indium source gas,
the zinc source gas, and the gallium source gas having a vapor
pressure of several to tens Torr may be identically controlled by
individually controlling a flow rate of the carrier gas as in the
following Table 5. However, it is impossible to control the flow
rate of the gallium source gas having a vapor pressure of hundreds
Torr by controlling only the flow rate of the carrier gas, and in a
case where the flow rate of the carrier gas is set to a lowest
limit value and the pressure of the container is controlled in
terms of the uniformity of an oxide film, the flow rate of the
carrier gas may be controlled identical to the flow rate of each of
the indium source gas and the zinc source gas. However, the
pressure of the container is difficult to maintain a normal
pressure (760 Torr) or more, and a separate apparatus is needed for
maintaining the pressure of the container as the normal
pressure.
[0189] Therefore, in comparison with an embodiment of the present
disclosure, it may be seen that, in the comparative example 1, it
difficult to control the flow rates of the indium source gas, the
zinc source gas, and the gallium source gas to similar flow
rates.
[0190] In an experiment performed on the comparative example 2, a
three-element oxide film including IGZO(InGaZnO) may have been
formed on a substrate by supplying the indium source gas and the
zinc source gas to the process chamber by using a carrier gas under
a condition shown in the following Table 5 and by supplying the
gallium source gas to the process chamber by using a flow rate
control member instead of the carrier gas.
TABLE-US-00005 TABLE 5 Division In(DADI) Zn(DEZ) Ga(TMGa) Flow rate
of carrier gas (1) 1000 sccm 500 sccm 0 sccm Vapor pressure of
source gas (2) 1.5 Torr 15 Torr 300 Torr Pressure of container (3)
100 Torr 500 Torr 300 Torr Flow rate of source gas (4) 15 sccm 15
sccm 15 sccm Density of source gas ~1.5% ~2.9% 100% [(4)/{(1) +
(4)}]
[0191] As seen in Table 5, in the comparative example 2, it may be
seen that, since the indium source gas and the zinc source gas are
supplied to the process chamber by using an individual carrier gas
and the gallium source gas is supplied to the process chamber by
using the flow rate control member, the flow rate of each of the
indium source gas, the zinc source gas, and the gallium source gas
is identically controlled. However, in the comparative example 2,
since the gallium source gas has a relatively high vapor pressure,
the flow rate of the gallium source gas may be controlled identical
to the flow rate of each of the indium source gas and the zinc
source gas through flow rate control by the flow rate control
member without the carrier gas, but since a density of the gallium
source gas is 100%, the composition non-uniformity of the oxide
film formed on the substrate occurs due to a density difference
between source gases. Particularly, in the comparative example 2, a
purge process performed for a sufficient time (about ten seconds)
is needed for uniformly adsorbing a gallium source precursor having
a high density onto the substrate, and thus, due to the purge
process, a deposition speed is reduced, causing the reduction in
productivity. For this reason, the comparative example 2 cannot be
applied to a process of manufacturing a large-size substrate
(particularly, a process of manufacturing a display apparatus).
[0192] By using a manufacturing method according to an embodiment
of the present disclosure and a manufacturing method of the
comparative example 2, an oxide film may have been formed on a
substrate, and the following Table 6 shows a result obtained by
measuring a composition of an oxide film formed in each of a center
region (center) of the substrate and an inner region (inside)
between the center region and an outer region. In this case, an
inductive coupling plasma optical emission spectroscopy (ICP-OES)
may have been used for a composition measurement of an oxide film.
The ICP-OES may be an apparatus which obtains and analyzes an
emission spectrum of an element by using inductive coupling plasma
capable of obtaining a high temperature of about 10,000K.
TABLE-US-00006 TABLE 6 Film comosition (at.%) Division In Ga Zn
.DELTA. Comparative Center 22.5 52.5 24.9 8.0% example 2 Inside
24.7 44.5 30.8 Embodiment of Center 23.1 49.4 27.4 1.5% the present
Inside 24.5 49.6 25.9 disclosure
[0193] As seen in Table 6, in the method of manufacturing an oxide
film according to the comparative example 2, it may be seen that a
gallium density deviation between the center region (center) and
the inner region (inside) of the substrate is 8%. On the other
hand, in the method of manufacturing an oxide film according to an
embodiment of the present disclosure, it may be seen that a gallium
density deviation between the center region (center) and the inner
region (inside) of the substrate is 1.5%.
[0194] The apparatus and method of manufacturing an oxide film
according to an embodiment of the present disclosure may improve
the composition uniformity of a three-element oxide film including
IGZO(InGaZnO), and moreover, may improve the composition uniformity
of the above-described two-element oxide film or four-element oxide
film.
[0195] FIG. 9 is a cross-sectional view of a thin film transistor
TFT according to an embodiment of the present disclosure.
[0196] Referring to FIG. 9, the thin film transistor TFT according
to an embodiment of the present disclosure may include an oxide
semiconductor layer 530 on a substrate S, a gate electrode 550
which is insulated from the oxide semiconductor layer 530 and
overlaps at least a portion of the oxide semiconductor layer 530, a
source electrode 570 which is connected to the oxide semiconductor
layer 530, and a drain electrode 580 which is spaced apart from the
source electrode 570 and is connected to the oxide semiconductor
layer 530.
[0197] The substrate S may use glass or plastic. The plastic may
use transparent plastic having a flexible characteristic, and for
example, may use polyimide.
[0198] A front surface of the substrate S may be covered by a
buffer layer 520. The buffer layer 520 may include at least one of
silicon oxide and silicon nitride.
[0199] The buffer layer 520 may include hydrogen (H). Hydrogen
included in the buffer layer 520 may move to the oxide
semiconductor layer 530 and may be bonded to oxygen of the oxide
semiconductor layer 530, causing oxygen vacancy (O-vacancy) in the
oxide semiconductor layer 530 or causing the oxide semiconductor
layer 530 to have conductivity. Due to this, the oxide
semiconductor layer 530 may be damaged, causing the reduction in
reliability of the thin film transistor TFT.
[0200] The oxide semiconductor layer 530 may include a hydrogen
blocking layer 531 on the buffer layer 520 and an active layer 533
on the hydrogen blocking layer 531.
[0201] The hydrogen blocking layer 531 may be disposed between the
active layer 533 and the buffer layer 520 and may prevent hydrogen
(H) from flowing into the active layer 530, thereby acting as a
passivation layer for protecting the active layer 533.
[0202] The hydrogen blocking layer 531 according to an embodiment
may include gallium (Ga) and zinc (Zn).
[0203] Gallium (Ga) may form a stable bond to oxygen, and thus, may
be good in resistance to penetration of a gaseous material.
Therefore, hydrogen may be blocked by a surface of the hydrogen
blocking layer 531 and may not be bonded to gallium, and thus, may
not be diffused to the hydrogen blocking layer 531.
[0204] Zinc (Zn) may contribute to stable forming of a layer. An
amorphous layer or a crystalline layer may be easily formed by
zinc. Accordingly, gallium may form a stable layer along with
zinc.
[0205] The hydrogen blocking layer 531 according to an embodiment
may include an oxide semiconductor material such as GZO(GaZnO). The
oxide semiconductor material such as GZO(GaZnO) may be a metal
component and may be a semiconductor material including gallium and
zinc. Also, the hydrogen blocking layer 531 may include a small
amount of indium (In). For example, indium of the active layer 533
may flow into the hydrogen blocking layer 531, and thus, the
hydrogen blocking layer 531 may include indium. The hydrogen
blocking layer 531 may be formed to have a composition having a
hydrogen blocking function, based on the method of manufacturing an
oxide film by using the oxide film manufacturing apparatus using
the MOCVD process according to an embodiment of the present
disclosure illustrated in FIGS. 1 to 8.
[0206] The active layer 533 may be referred to as a channel layer.
The active layer 533 may include an oxide semiconductor material.
For example, the active layer 132 may include an oxide
semiconductor material such as IZO(InZnO), IGO(InGaO), GZO(GaZnO),
IGZO(InGaZnO), GZTO(GaZnSnO), ITZO(InSnZnO), or IGZTO(InGaZnSnO).
The active layer 533 may be formed to have a composition suitable
for a characteristic of the thin film transistor TFT, based on the
method of manufacturing an oxide film by using the oxide film
manufacturing apparatus using the MOCVD process according to an
embodiment of the present disclosure illustrated in FIGS. 1 to
8.
[0207] The oxide semiconductor layer 530 may be covered by an
insulation layer 540. The insulation layer 540 may include at least
one of silicon oxide and silicon nitride.
[0208] The gate electrode 550 may be disposed on the insulation
layer 540 of which at least a portion overlaps the oxide
semiconductor layer 530.
[0209] The gate electrode 550 and the oxide semiconductor layer 530
may be covered by an interlayer insulation layer 560. The
interlayer insulation layer 560 may include an organic material or
an inorganic material, or may be formed as a stacked body of an
organic material layer and an inorganic material layer.
[0210] The source electrode 570 and the drain electrode 580 may be
disposed on the interlayer insulation layer 560 to overlap the
oxide semiconductor layer 530, spaced apart from each other, and
connected to the oxide semiconductor layer 530.
[0211] The source electrode 570 may be connected to the oxide
semiconductor layer 530 (i.e., a source region of the active layer
533) through a source contact hole formed in the interlayer
insulation layer 560. The drain electrode 580 may be connected to
the oxide semiconductor layer 530 (i.e., a drain region of the
active layer 533) through a drain contact hole formed in the
interlayer insulation layer 560.
[0212] The thin film transistor TFT according to an embodiment of
the present disclosure may include the oxide semiconductor layer
530 which is formed based on the method of manufacturing an oxide
film by using the oxide film manufacturing apparatus using the
MOCVD process according to an embodiment of the present disclosure,
thereby improving an electrical characteristic based on a uniform
composition of the oxide semiconductor layer 530.
[0213] Additionally, as illustrated in FIG. 10, the thin film
transistor TFT according to an embodiment of the present disclosure
may further include a light blocking layer 510 disposed between the
substrate S and the buffer layer 520.
[0214] The light blocking layer 510 may overlap the oxide
semiconductor layer 530 to block light incident on the oxide
semiconductor layer 530 of the thin film transistor TFT from the
outside, thereby preventing the oxide semiconductor layer 530 from
being damaged or degraded by external incident light.
[0215] The light blocking layer 510 according to an embodiment may
include an electrically conductive material such as metal, and
thus, the light blocking layer 510 may be covered by the buffer
layer 520 so as to insulate the light blocking layer 510 from the
oxide semiconductor layer 530. Therefore, hydrogen included in the
buffer layer 520 may be diffused to the inside of the oxide
semiconductor layer 530, but may be blocked by the surface of the
hydrogen blocking layer 531 of the oxide semiconductor layer 530
disposed on the buffer layer 520 overlapping the light blocking
layer 510 and may not be bonded to gallium, thereby preventing
hydrogen of the buffer layer 520 from being diffused to the
hydrogen blocking layer 531.
[0216] Additionally, the thin film transistor TFT illustrated in
FIGS. 9 and 10 may have a top gate structure where a gate electrode
is disposed on the oxide semiconductor layer 530, but without being
limited thereto, may have a bottom gate structure where the gate
electrode is disposed under the oxide semiconductor layer 530.
[0217] FIG. 11 is a schematic cross-sectional view of a display
apparatus according to an embodiment of the present disclosure.
[0218] Referring to FIG. 11, the display apparatus according to an
embodiment of the present disclosure may include a substrate S, a
thin film transistor TFT, a planarization layer 600, an organic
light emitting device 700, and a bank layer 800. Here, the organic
light emitting device 700 may include a first electrode 710, an
organic layer 730, and a second electrode 750.
[0219] The substrate S and the thin film transistor TFT are
respectively the same as the substrate S and the thin film
transistor TFT each illustrated in FIG. 9 or 10, and thus, their
repetitive descriptions are omitted. The display apparatus
according to an embodiment of the present disclosure may further
include a gate line, which is formed along with a gate electrode
540 of the thin film transistor TFT, and a data line and a pixel
driving power line which are each formed along with a source
electrode 570 and a drain electrode 580 of the thin film transistor
TFT.
[0220] The planarization layer 600 may be disposed on the thin film
transistor TFT to planarize an upper surface of the substrate S.
The planarization layer 600 may include an organic insulating
material such as acryl resin having photosensitivity, but is not
limited thereto.
[0221] The first electrode 710 may be disposed on the planarization
layer 600. The first electrode 710 may be connected to the source
electrode 570 of the thin film transistor TFT through an electrode
contact hole included in the planarization layer 600.
[0222] The bank layer 800 may be disposed on the first electrode
710 and the planarization layer 600 to define an emissive area of
each of a plurality of pixels. The bank layer 800 according to an
embodiment may be disposed in a matrix structure in a boundary
region between the plurality of pixels to define the emissive area
of each pixel.
[0223] The organic layer 730 may include an organic light emitting
layer.
[0224] The organic layer 730 according to an embodiment may include
one organic light emitting layer which emits light having one color
of red, green, and blue. In this case, the organic layer 730 may be
disposed on the first electrode 710 which is disposed in the
emissive area defined by the bank layer 800 so as to be divided by
units of pixels.
[0225] According to another embodiment, the organic layer 730 may
include a plurality of organic light emitting layers which are
vertically stacked to emit lights of different colors, for emitting
white light. In this case, the organic layer 730 may be disposed on
the first electrode 710 and the bank layer 800 so as to be
connected between adjacent pixels without being divided by units of
pixels.
[0226] The second electrode 750 may be disposed on the substrate S
and may be connected to the organic layer 730 disposed in each of
the plurality of pixels in common.
[0227] Optionally, in a case where the organic layer 730 emits
white light, each of the plurality of pixels may include a color
filter for filtering, by units of wavelengths, the white light
emitted from the organic layer 730. The color filter may be
provided in a light movement path.
[0228] For example, in a bottom emission type where light emitted
from the organic layer 730 is output to the outside through the
substrate S, the color filter may be disposed under the organic
layer 730 to overlap the emissive area of each pixel. In this case,
the first electrode 710 may be formed as a transparent conductive
layer and may include the transparent conductive layer which is
formed based on the method of manufacturing an oxide film by using
the oxide film manufacturing apparatus using the MOCVD process
according to an embodiment of the present disclosure.
[0229] As another example, in a top emission type where the light
emitted from the organic layer 730 is output to the outside through
the second electrode 750, the color filter may be disposed on the
organic layer 730 to overlap the emissive area of each pixel. In
this case, the second electrode 750 may be formed as a transparent
conductive layer and may include the transparent conductive layer
which is formed based on the method of manufacturing an oxide film
by using the oxide film manufacturing apparatus using the MOCVD
process according to an embodiment of the present disclosure.
[0230] The display apparatus according to an embodiment of the
present disclosure, as illustrated in FIG. 11, may have a structure
of an organic light emitting display apparatus including the
organic light emitting device 700, but without being limited
thereto, may have a structure of a liquid crystal display apparatus
including a liquid crystal layer.
[0231] The above-described feature, structure, and effect of the
present disclosure are included in at least one embodiment of the
present disclosure, but are not limited to only one embodiment.
Furthermore, the feature, structure, and effect described in at
least one embodiment of the present disclosure may be implemented
through combination or modification of other embodiments by those
skilled in the art. Therefore, content associated with the
combination and modification should be construed as being within
the scope of the present disclosure.
[0232] It will be apparent to those skilled in the art that various
modifications and variations can be made in the present disclosure
without departing from the scope of the disclosure. Thus, it is
intended that the present disclosure covers the modifications and
variations of this disclosure provided they come within the scope
of the appended claims.
* * * * *