U.S. patent application number 15/881200 was filed with the patent office on 2019-08-01 for apparatuses and methods for providing driving signals in semiconductor devices.
This patent application is currently assigned to MICRON TECHNOLOGY, INC.. The applicant listed for this patent is MICRON TECHNOLOGY, INC.. Invention is credited to Tetsuaki Okahiro, Satoshi Yamanaka.
Application Number | 20190237128 15/881200 |
Document ID | / |
Family ID | 67106278 |
Filed Date | 2019-08-01 |
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United States Patent
Application |
20190237128 |
Kind Code |
A1 |
Yamanaka; Satoshi ; et
al. |
August 1, 2019 |
APPARATUSES AND METHODS FOR PROVIDING DRIVING SIGNALS IN
SEMICONDUCTOR DEVICES
Abstract
Apparatuses and methods for providing driving signals in
semiconductor devices are described. An example apparatus includes
a plurality of memory cell mats including a plurality of word lines
and a word line driver coupled to the plurality of word lines of
the plurality of memory cell mats. The word line driver is
configured, responsive to a row active command, to provide a first
voltage to a selected word line of the plurality of the word lines
of a selected memory cell mat of the plurality of memory cell mats,
provide a second voltage different from the first voltage to each
of unselected word lines of the plurality of the word lines of the
selected memory cell mats of the plurality of memory cell mats, and
provide no voltage to each of the plurality of word lines of each
of unselected memory cell mats of the plurality of memory cell
mats.
Inventors: |
Yamanaka; Satoshi;
(Kokubunji, JP) ; Okahiro; Tetsuaki; (Sagamihara,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
MICRON TECHNOLOGY, INC. |
BOISE |
ID |
US |
|
|
Assignee: |
MICRON TECHNOLOGY, INC.
BOISE
ID
|
Family ID: |
67106278 |
Appl. No.: |
15/881200 |
Filed: |
January 26, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 8/14 20130101; G11C
11/4087 20130101; G11C 8/12 20130101; G11C 8/08 20130101; G11C
5/025 20130101; G11C 11/4085 20130101; G11C 11/4091 20130101; G11C
11/4074 20130101 |
International
Class: |
G11C 11/4091 20060101
G11C011/4091; G11C 11/4074 20060101 G11C011/4074 |
Claims
1. An apparatus, comprising: a plurality of memory cell mats each
including a plurality of word lines; and a word line driver coupled
to the plurality of word lines of the plurality of memory cell
mats, the word line driver configured, responsive to a row active
command, to: provide a first voltage to a selected word line of the
plurality of the word lines of a selected memory cell mat of the
plurality of memory cell mats; provide a second voltage different
from the first voltage to each of unselected word lines of the
plurality of the word lines of the selected memory cell mats of the
plurality of memory cell mats; and provide no voltage to each of
the plurality of word lines of each of unselected memory cell mats
of the plurality of memory cell mats; and a control circuit
configured to receive a float enable signal and a memory mat
activation signal, and further configured to provide an active
enable signal to the word line driver responsive to an active float
enable signal and inactive memory mat activation signal, to cause
the word line driver to provide no voltage.
2. The apparatus of claim 1, wherein the word line driver is
further configured, responsive to a precharge command, to provide
no voltage to the selected word line and the unselected word lines
of the selected memory cell mat of the plurality of memory cell
mats.
3. The apparatus of claim 2, wherein the word line driver is
further configured, responsive to the precharge command, to provide
the second voltage to the selected word line of the plurality of
word lines of the selected memory cell mat of the plurality of
memory cell mats before providing no voltage to the selected word
line of the plurality of word lines of the selected memory cell mat
of the plurality of memory cell mats.
4. The apparatus of claim 1, wherein the word line driver is
further configured, responsive to the row active command, to
provide the second voltage to the selected word line of the
plurality of word lines of the selected memory cell mat of the
plurality of memory cell mats before providing the first voltage to
the selected word line of the plurality of word lines of the
selected memory cell mat of the plurality of memory cell mats.
5. The apparatus of claim 1, wherein the word line driver is
configured, responsive to the row active command in a first
operation mode, to: provide the first voltage to the selected word
line of the plurality of the word lines of the selected memory cell
mat of the plurality of memory cell mats; provide the second
voltage to each of the unselected word lines of the plurality of
the word lines of the selected memory cell mats of the plurality of
memory cell mats; and provide no voltage to each of the plurality
of word lines of each of the unselected memory cell mats of the
plurality of memory cell mats; and wherein the word line driver is
further configured, responsive to the row active command in a
second operation mode, to: provide the first voltage to the
selected word line of the plurality of the word lines of the
selected memory cell mat of the plurality of memory cell mats; and
provide the second voltage to each of the unselected word lines of
the plurality of the word lines of the selected memory cell mats of
the plurality of memory cell mats; and provide the second voltage
to each of the plurality of word lines of each of the unselected
memory cell mats of the plurality of memory cell mats.
6. (canceled)
7. An apparatus, comprising: a memory mat including a main word
line and a plurality of subword lines; a plurality of subword
drivers coupled to the main word line, each subword driver of the
plurality of subword drivers coupled to a respective one of the
plurality of subword lines and configured to receive a respective
driving signal, when activated each subword driver of the plurality
of subword drivers configured to drive the respective one of the
plurality of subword lines to a voltage of the respective driving
signal; and a driving signal driver configured to provide the
respective driving signals to the plurality of subword drivers, the
driving signal driver configured to provide the respective driving
signals having a first voltage or a second voltage when the memory
mat is selected and to provide the respective signals having a
floating voltage when the memory mat is unselected, wherein the
driving signal driver comprises a driver circuit, the driver
circuit comprising: a signal driver circuit configured to provide a
driving signal having the first voltage or the second voltage
responsive to a selection signal, and further configured to provide
the driving signal having a floating voltage responsive to an
active enable signal; and a control circuit configured to receive a
float enable signal and a memory mat activation signal, and further
configured to provide an active enable signal to the signal driver
responsive to an active float enable signal and inactive memory mat
activation signal.
8. The apparatus of claim 7 wherein the signal driver circuit is
further configured to provide a second driving signal having the
first voltage when the driving signal has the second voltage and to
provide the second driving signal having the second voltage when
the driving signal has the first voltage.
9. The apparatus of claim 7 wherein the signal driver circuit
comprises an output circuit, the output circuit comprising: a first
transistor configured to be provided the first voltage and to
provide the first voltage to an output when activated; a second
transistor configured to be provided the second voltage and to
provide the second voltage when activated; and a third transistor
coupled between the second transistor and the output and configured
to provide the second voltage to the output when activated and to
allow the output to float when not activated responsive to the
float enable signal.
10. The apparatus of claim 9 wherein the signal driver circuit
further comprises a second output circuit configured to provide a
complementary driving signal.
11. The apparatus of claim 7 wherein the signal driver circuit is
configured to receive first and second control signals, wherein the
signal driver circuit is further configured to provide the driving
signal having a voltage responsive to a logic level of the
selection signal when the first and second control signals are
active and to provide the driving signal having a second voltage
when the first control signal is inactive.
12. The apparatus of claim 7, wherein a subword driver of the
plurality of subword drivers comprises: first and second
transistors series coupled and coupled to the main word line, the
first transistor configured to be provided the driving signal; and
a third transistor coupled to a common node of the first and second
transistors.
13. The apparatus of claim 7, wherein the memory mat includes a
plurality of memory cell array regions and wherein the main word
line extends across the plurality of memory cell array regions.
14. The apparatus of claim 13 wherein the memory cell array regions
of the memory mat are arranged two array regions wide.
15. The apparatus of claim 13 wherein the memory cell array regions
of the memory mat are arranged one array region wide.
16. A method, comprising: driving a word line driver for a selected
word line of a selected memory mat of a plurality of memory mats to
a first voltage; driving word line drivers for unselected word
lines of the selected memory mat of the plurality of memory mats to
a second voltage; and providing an active enable signal responsive
to an active float enable signal and an inactive memory mat
activation signal, the active enable signal causes an output
circuit coupled between a first voltage line having the first
voltage and a second voltage line having the second voltage to be
non-conductive to at least the first voltage line or the second
voltage line to provide a floating voltage independent from the
first voltage line and the second voltage line to word line drivers
of unselected memory mats of the plurality of memory mats.
17. The method of claim 16 wherein driving a word line driver for
the selected word line of the selected memory mat comprises
providing an internal potential having the first voltage to the
word line driver.
18. The method of claim 16, further comprising activating the word
line drivers of the selected memory mat of the plurality of memory
mats.
19. The method of claim 16, further comprising providing the
floating voltage to word line drivers of the selected memory mat of
the plurality of memory mats prior to activation of the selected
memory mat of the plurality of memory mats and subsequent to
deactivation of the selected memory mat of the plurality of memory
mats.
20. The method of claim 16 wherein providing the floating voltage
to word line drivers of unselected memory mats of the plurality of
memory mats comprises deactivating a transistor in the output
circuit to provide the first voltage to a word line driver for the
unselected word lines of the selected memory mat of the plurality
of memory mats.
21. The apparatus of claim 1, wherein the word line driver
comprises an output circuit coupled between a first voltage line
having the first voltage and a second voltage line having the
second voltage, and configured to be non-conductive to at least the
first voltage line or the second voltage line responsive to the
active float enable signal.
Description
BACKGROUND
[0001] A semiconductor memory device represented by a DRAM (Dynamic
Random Access Memory) includes a memory cell array having memory
cells disposed at intersections between subword lines and bit
lines. The semiconductor memory device may include hierarchically
structured main word lines and subword lines. The main word line is
a word line positioned at an upper hierarchy, and is selected by a
first portion of a row address. The subword line is a word line
positioned at a lower hierarchy, and is selected based on a
corresponding main word line and a word driver line selected by a
second portion of the row address.
[0002] A memory cell array included in a semiconductor memory
device such as the DRAM may be divided into a plurality of memory
mats to reduce the wiring capacity of the subword line and the bit
line. The memory mat refers to an extending range of the subword
line and the bit line. The main word line described above is
assigned in plurals to one memory mat, so that when the main word
line is selected using the first portion of the row address, the
memory mat to be selected is also determined at the same time.
[0003] The driving process of the subword lines is carried out by
subword drivers, and when the subword line is driven to an active
potential, the memory cell is connected to the corresponding bit
line. On the other hand, during a period in which the subword line
is driven to a non-active potential, the memory cell and the bit
line are kept in a cut-off state.
[0004] In driving subword lines to the active potential, relatively
high voltages are provided to the subword drivers of a memory mat.
In contrast, in driving the subword line to a non-active potential,
relatively low voltages are provided to the subword drivers of the
memory mat. The relatively low voltages that are provided while the
subword lines are driven to the non-active potential establishes a
condition for transistors of the subword drivers that may result in
leakage currents. For example, the relatively low voltage provided
to a source of a transistor of the subword driver while a
relatively high voltage is provided to a gate of the transistor and
a relatively low voltage is provided to the drain of the transistor
may result in voltage differences sufficient to induce leakage
currents in the transistor. An example of leakage currents may be
gate induced drain leakage (GIDL).
[0005] Leakage currents increase power consumption by a
semiconductor memory device. In systems where low power consumption
is important, leakage currents may cause unacceptable power
consumption. Therefore, reducing leakage currents in semiconductor
memory devices may be desirable.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] FIG. 1 is a block diagram of a semiconductor device
according to an embodiment of the disclosure.
[0007] FIG. 2 is a diagram for a layout of the semiconductor device
of FIG. 1 according to an embodiment of the disclosure.
[0008] FIG. 3 is a diagram for a configuration of a bank of the
memory cell array of the semiconductor device of FIG. 1 according
to an embodiment of the disclosure.
[0009] FIG. 4 is a schematic diagram of a portion of the bank of
FIG. 3 according to an embodiment of the disclosure.
[0010] FIG. 5 is a block diagram of a portion of the row decoder
according to an embodiment of the disclosure.
[0011] FIG. 6 is a diagram for a layout of word driver lines for a
portion of a bank of the memory cell array of the semiconductor
device of FIG. 1 according to an embodiment of the disclosure.
[0012] FIGS. 7 and 8 are diagrams for layouts of word driver lines
for a portion of a bank of the memory cell array of the
semiconductor device of FIG. 1 according to different embodiments
of the disclosure.
[0013] FIG. 9 is a schematic diagram of a subword driver according
to an embodiment of the disclosure.
[0014] FIG. 10 is a schematic diagram of a driver circuit for
driving signals according to an embodiment of the disclosure.
[0015] FIG. 11 is a timing diagram of various signals during
operation of the driver circuit of FIG. 10 according to an
embodiment of the disclosure.
DETAILED DESCRIPTION
[0016] Certain details are set forth below to provide a sufficient
understanding of examples of various embodiments of the disclosure.
However, it will be clear to one having skill in the art that
examples described herein may be practiced without these particular
details. Moreover, the particular examples of the present
disclosure described herein should not be construed to limit the
scope of the disclosure to these particular examples. In other
instances, well-known circuits, control signals, timing protocols,
and software operations have not been shown in detail in order to
avoid unnecessarily obscuring embodiments of the disclosure.
Additionally, terms such as "couples" and "coupled" mean that two
components may be directly or indirectly electrically coupled.
Indirectly coupled may imply that two components are coupled
through one or more intermediate components.
[0017] FIG. 1 is a block diagram of a semiconductor device 10
according to an embodiment of the disclosure. The semiconductor
device 10 may be a dynamic random access memory (DRAM) in some
embodiments of the disclosure. The semiconductor device 10 includes
a memory cell array 11. The memory cell array 11 includes a
plurality of subword lines SWL and a plurality of bit lines BL that
intersect with each other, with memory cells disposed at the
intersections. The memory cell array 11 further includes a
plurality of main word lines MWL. The selection of a main word line
MWL and subword line SWL is carried out by a row decoder 12, and
the selection of the bit line BL is carried out by a column decoder
13. Each of the bit lines BL is connected to a corresponding sense
amplifier SA inside a sense circuit 14, and the bit line BL
selected by the column decoder 13 is connected to an amplifier
circuit 15 through the sense amplifier SA.
[0018] The operations of the row decoder 12, the column decoder 13,
the sense circuit 14 and the amplifier circuit 15 are controlled by
an access control circuit 20. An address signal ADD and a command
signal CMD are externally supplied respectively through an address
terminal 21 and a command terminal 22 to the access control circuit
20. The access control circuit 20 receives the address signal ADD
and the command signal CMD, and based upon these, controls the
operations of the row decoder 12, the column decoder 13, the sense
circuit 14 and the amplifier circuit 15.
[0019] More specifically, in the case when the command signal CMD
indicates an active command, the address signal ADD (row address
RA) is supplied to the row decoder 12. In response to this, the row
decoder 12 selects a main word line MWL and subword line SWL
indicated by the row address RA so that the associated memory cell
MC is subsequently connected to the bit line BL. Thereafter, the
access control circuit 20 activates the sense circuit 14.
[0020] On the other hand, in the case when the command signal CMD
indicates a read command or a write command, the address signal ADD
(column address CA) is supplied to the column decoder 13. In
response to this, the column decoder 13 connects the bit line BL
indicated by the column address CA to the amplifier circuit 15.
With this arrangement, at the time of a reading operation, read
data DQ read from the memory array 11 are externally output from a
data terminal 23 through the amplifier 15. Moreover, at the time of
a writing operation, read data DQ externally supplied through the
data terminal 23 are written in the memory cell MC through the
amplifier circuit 15 and the sense amplifier SA.
[0021] These circuit blocks respectively use internal voltages as
operation power supplies. These internal power supplies are
generated by a power supply circuit 30 shown in FIG. 1, The power
supply circuit 30 receives an external potential VDD and a ground
potential VSS respectively supplied thereto through power supply
terminals 31 and 32, and based upon these, generates internal
potentials VCCP, VDRV, VKK, VBB, VPERI, VARY,VEQ and the like.
[0022] The internal potentials VCCP, VDRV, and VKK are potentials
to be mainly used in the row decoder 12. Although the detailed
description thereof will be given later, the row decoder 12 drives
the main word line MWL and subword line SWL selected based upon the
address signal ADD to a VCCP level corresponding to a high
potential so that the cell transistor contained in the memory cell
MC is turned on.
[0023] The internal potential VARY and VEQ is a potential to be
used in the sense circuit 14. When the sense circuit 14 is
activated, the read data read out is amplified by driving one of
the paired bit lines to a VARY level with the other one being
driven to a VSS level. The internal potential VPERI is used as a
power supply potential for most of the peripheral circuits, such as
the access control circuit 20 or the like. By using the internal
potential VPERI having a lower potential than the external
potential VDD as the power supply potential of these peripheral
circuits, it may be possible to reduce power consumption of the
semiconductor device 10.
[0024] FIG. 2 is a diagram for a layout of the memory cell array of
the semiconductor device 10 according to an embodiment of the
disclosure.
[0025] The memory cell array of the present embodiment is divided
into eight banks 11 BK0 to BK7. The row decoder 12 is disposed
between two banks 11 that are adjacent in the X direction. On the
other peripheral circuit region PE, various peripheral circuits and
external terminals as shown in FIG. 1 are disposed.
[0026] FIG. 3 is a diagram for a configuration of a bank BK of the
memory cell array of the semiconductor device 10 according to an
embodiment of the disclosure. The banks BK0 to BK7 of FIG. 2 may
each include the configuration of FIG. 3 in some embodiments of the
disclosure.
[0027] As shown in FIG. 3, the bank BK includes a plurality of
memory mats MAT laid out in a matrix. Moreover, subword driver rows
SWDA are formed on the two sides in the X direction of each memory
mat MAT, and sense amplifier rows SAA are formed on the two sides
in the Y direction of each memory mat MAT.
[0028] On the subword driver row SWDA, a plurality of subword
drivers, which will be described later, are disposed, and their
operations are controlled by the row decoder 12. When a row address
RA is inputted thereto, the row decoder 12 selects by way of a
selected main word line MWL the plural subword driver rows SWDA
that are aligned in the X direction (that is, having the same Y
coordinate value). For example, in FIG. 3, when the plural subword
driver rows SWDA indicated by hatched lines are selected, memory
mats MAT with hatched lines are selected by a corresponding main
word line MWL. In this case, all the other memory mats MAT are
non-selection.
[0029] Moreover, a plurality of sense amplifiers SA are disposed on
a sense amplifier row SAA, and the sense amplifiers SA selected by
the column decoder 13 are connected to the amplifier circuit 15
shown in FIG. 1.
[0030] FIG. 4 is a schematic diagram of a portion of the bank BK of
FIG. 3 according to an embodiment of the disclosure.
[0031] FIG. 4 shows one portion of memory mats MAT0 and MAT1 that
are adjacent in the Y direction. As shown in FIG. 4, in each of the
memory mats MAT0 and MAT1, the subword lines SWL extend in the X
direction and the bit lines BL extend in the Y direction.
Additionally, in FIG. 4, two subword lines SWL0 and SWL1 formed in
the memory mat MAT0 and one bit line BL0, as well as one subword
line SWL2 and one bit line BL1 formed in the memory mat MAT1, are
shown.
[0032] The subword lines SWL0 and SWL1 are formed so as to be
adjacent to each other, and driven by subword drivers SWD0 and SWD1
formed on different subword driver rows SWDA. To these subword
drivers SWD, corresponding main word signal MWS, driving signals FX
and non-active potential VKK are supplied. The main word signal MWS
and the driving signals FX are signals generated by the row decoder
12 based upon the row address RA. As will be described below, the
driving signals FX include complementary signals FX and FXF. The
main word signal MWS is provided to the subword drivers SWD0 and
SWD1 over a main word line MWL, and the driving signals FX are
provided to the subword drivers SWD0 and SWD1 over word driver
lines. A main word line MWL may extend over array regions of a
respective memory mat to provide the MWS signal to the subword
driver rows SWDA of the memory mat to activate the subword drivers
SWD of the memory mat. Subword drivers for memory mats of a memory
cell array may be included in a word line driver that is coupled to
word lines (e.g., subword lines) of the memory mats.
[0033] Moreover, the bit line BL0 and the bit line BL1 are
connected to the same sense amplifier SA0. That is, the
semiconductor device 10 has a so-called open bit line structure.
However, embodiments of the disclosure are not limited to having
the open bit line structure, and may have another structure. For
example, some embodiments of the disclosure have a folded bit line
structure.
[0034] The sense amplifier SA0 has a function for amplifying the
potential difference between the bit line BL0 and the bit line BL1.
For example, in the case when the subword line SWL0 is selected,
since the potential of the bit line BL0 is changed by a charge held
in the memory cell MC0, this change can be detected by using the
bit line BL1 as a reference potential. The memory cell MC has a
configuration in which a cell transistor T and a cell capacitor C
are series-connected. In this case, the memory cells MC0 and MC1,
shown in FIG. 4, share the bit line BL0, and are memory cells
respectively selected by the adjacent subword lines SWL0 and
SWL1.
[0035] FIG. 5 is a block diagram of a portion of the row decoder 12
according to an embodiment of the disclosure. The row decoder 12
includes a predecoder PRE that receives the row address RA, and
based on the row address RA, provides selection signals SELMWL and
SELFX to a main word driver MWD and driving signal (FX) driver FXD,
respectively. The main word driver MWD selects a main word lines
MWL based on the selection signals SELMWL and provides an active
main word signal MWS to activate subword drivers of a selected
memory mat MAT. The FX signals are provided to respective subword
drivers and the FX driver FXD selects a word driver line based on
the selection signals SELFX and provides active driving signals FX
and FXF to activate a subword driver corresponding to the selection
signals SELFX. In this manner, a selected subword line SWL of the
selected memory mat MAT is driven to the active potential by the
corresponding activated subword driver SWD. The other subword
drivers SWD of the selected memory mat MAT drive the respective
unselected subword lines SWL to the non-active potential to remain
inactive. Subword drivers SWD of unselected memory mats MAT remain
deactivated, and the subword lines SWL of the unselected memory
mats MAT are not provided a voltage.
[0036] FIG. 6 is a diagram for a layout of word driver lines for a
portion of a bank BK of the memory cell array according to an
embodiment of the disclosure. The layout of word driver lines of
FIG. 6 may be used for the banks described in various embodiments
of the disclosure.
[0037] FIG. 6 illustrates FX drivers FXD0-FXD7 that provide
respective driving signals FX and FXF. As previously described, the
word driver line FX is a complementary signal, and hence each of
the word driver lines FX shown in FIG. 6 include a pair (two) of
wirings, one for FX and the other for FXF. The word driver lines
FX0 to FX7 are wirings driven by the FX drivers FXD0 to FXD7
included in the row decoder 12, and include a portion FXx extending
in the X direction and a portion FXy extending in the Y direction.
The portion FXx extending in the X direction is connected to the
corresponding FX driver FXD0 to FXD7, and is arranged on the memory
mat MAT and the subword driver region SW. The portion FXy extending
in the Y direction is alternately arranged by four pairs on the
subword driver region SW and the subword cross region SWC. The
portion FXy extending in the Y direction is commonly assigned to
the memory mats MAT0 to MAT2. In the embodiment of FIG. 6, each
word driver line FX0 to FX7 is associated with three memory mats
MAT0 to MAT2 arrayed continuously in the Y direction. However,
other arrangements of word driver lines may be different than shown
in the example of FIG. 6 without departing from the scope of the
disclosure.
[0038] For example, FIGS. 7 and 8 are diagrams for layouts of word
driver lines for a portion of a bank BK of the memory cell array
according to different embodiments of the disclosure. FIGS. 7 and 8
do not illustrate FX drivers FXD and the portion FXx of the word
driver lines, in contrast to FIG. 6. However, memory mats MAT and
portions FXy of the word driver lines are illustrated.
[0039] FIG. 7 illustrates an embodiment of the disclosure where the
memory mats MAT_0 to MAT_n are one array region wide and extend
along the Y direction. Disposed between the array regions of
adjacent memory mats are sense amplifier rows (not shown in FIG. 7)
and disposed between adjacent array regions of a memory mat MAT are
plural subword driver rows (not shown in FIG. 7). The word driver
lines have portions FXy that are associated with a respective
memory mat MAT. For example, each of the memory mats MAT_0 to MAT_n
is associated with a respective word driver line portion that
extends the width of one array region.
[0040] FIG. 8 illustrates an embodiment of the disclosure where the
memory mats MAT_01 to MAT_(n-1)n are two array regions wide and
extend along the Y direction. Disposed between the array regions of
adjacent memory mats are sense amplifier rows (not shown in FIG. 8)
and disposed between adjacent array regions of a memory mat MAT are
plural subword driver rows (not shown in FIG. 8). The word driver
lines have portions FXy that are associated with a respective
memory mat MAT. For example, each of the memory mats MAT_01 to
MAT_(n-1)n is associated with respective word driver line portion
that extends the width of two array regions.
[0041] As illustrated by the examples of FIGS. 6, 7, and 8, various
layouts of word driver lines for a portion of a bank BK of the
memory cell array are within the scope of the disclosure.
[0042] FIG. 9 is a schematic diagram of a subword driver SWD
according to an embodiment of the disclosure. The subword driver
SWD may be included in the subword drivers SWD previously described
in various embodiments of the disclosure.
[0043] The subword driver SWD includes a P-channel type MOS
transistor P1 and N-channel type MOS transistors N1 and N2. The
transistors P1 and N1 are series-connected to each other, and a
main word signal MWS is inputted to their gate electrodes. A
driving signal FX is supplied to the source of the transistor P1,
and the non-active potential VKK is supplied to the source of the
transistor N1. Moreover, the drains of the transistors P1 and N1
are connected to subword lines SWL. Furthermore, a driving signal
FXF is supplied to the gate electrode of the transistor N2, with
its drain being connected to the subword line SWL, and the
non-active potential VKK is supplied to its source. As previously
described, the main word signal is provided by a main word driver
MWD and the driving signals FX and FXF are provided by FX drivers
FXD.
[0044] The main word signal MWS is a signal that becomes a low
level when selected, and the driving signals FX and FXF are signals
that respectively become a high level (VCCP level) and the low
level (VSS level) when selected. Thus, when the main word signal
MWS and the driving signals FX and FXF are activated, the
corresponding subword line SWL is driven to the VCCP level that is
an active potential. In contrast, in the case when at least one of
the main word signal MWS and the driving signals FX and FXF is in
the non-activated state, the corresponding subword line SWL is
driven to the VKK level that is the non-active potential.
[0045] As previously described, when driving subword lines to the
active potential, relatively high voltages are provided to the
subword drivers of a memory mat by way of the driving signals FX
and FXF. In contrast, in driving the subword line to a non-active
potential, relatively low voltages are provided to the subword
drivers of the memory mat by way of the driving signals FX and FXF.
The relatively low voltages that are provided while the subword
lines are driven to the non-active potential may establish a
condition for transistor P1 that may result in leakage currents.
For example, the relatively low voltage provided to the source of
the transistor P1 by the driving signal FX while a relatively high
voltage is provided to the gate of the transistor P1 by the main
word signal MWS, and a relatively low voltage is provided to the
drain to the transistor P1 by the subword line SWL may result in
voltage differences sufficient to induce leakage currents in the
transistor P1, such as GIDL currents.
[0046] FIG. 10 is a schematic diagram of a driver circuit 1000 for
driving signals FX and FXF according to an embodiment of the
disclosure. The driver circuit 1000 may be included in a FX driver
previously described in various embodiments of the disclosure. For
example, a FX driver may include a plurality of driver circuits
1000, each configured to provide respective FX and FXF signals to a
subword driver.
[0047] The driver circuit 1000 includes a control circuit 1002 and
a signal driver circuit 1004. The signal driver circuit 1004
provides driving signals FX and FXF having complementary logic
levels responsive to selection signal Ract210 when activated by
active control signals Ract1 and Ract2 (e.g., active high logic
levels). The selection signal may be provided by a predecoder
included in a row decoder. For example, the Ract210 signal may be
included in selection signals provided by the predecoder (e.g.,
selection signals SELFX provided by the predecoder PRE). For
example, in some embodiments, the selection signals include eight
signals Ract210<7:0>. Each of the Ract210 signals is provided
to a respective driver circuit 1000 to provide respective driving
signals FX and FXF based on the respective selection signal Ract210
(e.g., Ract210<0> is provided to a respective driver circuit
1000 to provide FX<0> and FXF<0>; Ract210<1> is
provided to a respective driver circuit 1000 to provide FX<1>
and FXF<1>, Ract210<2> is provided to a respective
driver circuit 1000 to provide FX<2> and FXF<2>, and so
on). The control signals Ract1 and Ract2 may be commonly provided
to the driver circuits 1000.
[0048] The FX signal has the same logic level as the Ract210 signal
and the FXF signal has a complementary logic level to the Ract210
signal. The control circuit 1002 may control the driver circuit
1000 to provide a FX signal having a floating voltage ("floating FX
signal") in a first mode. The floating voltage of the FX signal is
generally not forced to a voltage, such as to a power supply
potential or an internal potential. A floating FX signal may reduce
leakage currents (e.g., GIDL currents) in some operating conditions
for circuits that receive the FX signal, such as a subword driver,
in comparison to the signal driver circuit 1004 not providing a
floating FX signal. The control circuit 102 may control the driver
circuit 1000 to provide a FX signal having a voltage pulled high to
an internal potential or pulled low to a ground potential in a
second mode.
[0049] The signal driver circuit 1004 includes a level shifter
circuit 1006 that receives a control signal Ract2 and provides a
level shifted Ract2 signal to a logic circuit 1010. The level
shifter circuit 1006 changes a voltage of at least one of the logic
levels for the Ract2 signal. For example, in some embodiments of
the disclosure, the level shifter circuit changes the voltages from
VPERI to VCCP for a high logic level. The logic circuit 1010
further receives selection signal Ract210. The driver circuit 1000
further includes a logic circuit 1008 that receives a control
signal Ract1 and the selection signal Ract210.
[0050] The logic circuit 1008 provides a low logic level Rx210act1F
signal (e.g., at a ground potential VSS) when both the Ract1 signal
and a respective Ract210 signal are at a high logic level (e.g., at
the internal potential VPERI). The logic circuit 1008 provides a
high logic level Rx210act1F signal when either or both of the Ract1
signal and the respective Ract210 signal is a low logic level. The
logic circuit 1008 may include a NAND logic gate in some
embodiments of the disclosure. The logic circuit 1008 may
additionally and/or alternatively include other logic gates in
other embodiments of the disclosure.
[0051] As previously described, the level shifter circuit 1006
provides the level shifted Ract2 signal to the logic circuit 1010.
The logic circuit 1010 includes transistors 1012-1015 coupled in
series between a power supply providing an internal potential
(e.g., VCCP) and a ground potential VSS. The transistors 1012 and
1014 are provided the level shifted Ract2 signal, and transistor
1013 is provided a Ract210 signal (e.g., one of the Ract210
signals). The transistors 1015 and 1016 are coupled to internal
potentials (e.g., VCCP, VEQ). The logic circuit 1010 provides a low
logic level Rx210act2F signal when both the respective Ract210
signal and the level shifted Ract2 signal are high logic levels
(e.g., at the VCCP potential), and provides a high logic level
Rx210act2F signal when the Ract2 signal is a low logic level. The
transistors 1015 and 1016 limit a current through the logic circuit
1010 when operating.
[0052] The Rx210act2F signal is provided by the logic circuit 1010
to a circuit 1030, and in response, provides an output signal to a
circuit 1040. The circuit 1030 includes transistors 1032-1034
coupled in series between a power supply providing an internal
potential (e.g., VCCP) and a ground potential VSS. The transistors
1032 and 1033 are provided the output signal from the logic circuit
1010. The transistor 1034 is coupled to an internal potential
(e.g., VCCP). The circuit 1030 provides an output signal that is
the complementary logic level of the signal from the logic circuit
1010. For example, the circuit 1030 provides a low logic level
output signal when the signal from the logic circuit 1010 is a high
logic level, and the circuit 1030 provides a high logic level
output signal when the signal from the logic circuit 1010 is a low
logic level. An output of the circuit 1030 is coupled to its input
by a transistor 1036, which is further coupled to an internal
potential (e.g., VCCP). The transistor 1036 aids in latching a low
logic level output signal at the output of the circuit 1030.
[0053] As previously described, the circuit 1030 provides its
output signal to the circuit 1040. The circuit 1040 includes
transistors 1042-1044 coupled in series between a power supply
providing an internal potential (e.g., VCCP) and a ground potential
VSS. The transistors 1042 and 1043 are provided the output signal
from the circuit 1030. The transistor 1044 is coupled to an
internal potential (e.g., VCCP). The circuit 1040 provides an
output signal that is the complementary logic level of the output
signal from the circuit 1030. For example, the circuit 1040
provides a low logic level output signal when the signal from the
circuit 1030 is a high logic level, and the circuit 1040 provides a
high logic level output signal when the signal from the circuit
1030 is a low logic level.
[0054] The output signal from the circuit 1040 is provided to an
output circuit 1050. The output circuit 1050 provides the FX
signal. The output circuit includes transistors 1052-1054 coupled
in series between a power supply providing an internal potential
(e.g., VCCP) and a ground potential VSS. The transistors 1052 and
1053 are provided the output signal from the circuit 1040. The,
transistor 1054 is provided a control signal MAT_Float_EnF provided
by the control circuit 1002.
[0055] The control circuit 1002 includes a level shifter circuit
1003 that receives a memory mat selection signal MAT and provides a
level shifted MAT signal to a logic circuit 1005. The logic circuit
1005 further receives a float enable signal EnF. When the EnF
signal is active (e.g., active low logic level), the logic circuit
1005 provides the MAT_Float_EnF signal having a logic level based
on the logic level of the MAT signal. For example, when the EnF
signal is active, the control circuit 1002 provides a low logic
level MAT_Float_EnF signal (e.g., an active MAT Float EnF signal)
responsive to a low logic level MAT signal, and provides a high
logic level MAT_Float_EnF signal (e.g., an inactive MAT_Float_EnF
signal) responsive to a high logic level MAT signal. When the EnF
signal is inactive (e.g., inactive high logic level), the control
circuit 1002 provides a high logic level MAT_Float_EnF signal
regardless of the logic level of the MAT signal. An active EnF
signal may correspond to a first mode and an inactive EnF signal
may correspond to a second mode.
[0056] When the MAT_Float_EnF signal is inactive (e.g., inactive
high logic level), the output circuit 1050 provides the FX signal
having a voltage corresponding to a logic level based on the logic
level of the output signal from the circuit 1040. For example, the
output circuit 1050 provides the FX signal having a voltage
corresponding to a low logic level (e.g., the ground potential)
when the output signal from the circuit 1040 is a high logic level,
and the output circuit 1050 provides the FX signal having a voltage
corresponding to a high logic level (e.g., the VCCP potential) when
the output signal from the circuit 1040 is a low logic level. When
the MAT_Float_EnF signal is active (e.g., active low logic level),
the output circuit 1050 provides a floating FX signal. For example,
the output circuit 1050 provides the FX signal having a floating
voltage (e.g., no voltage) when the output signal from the circuit
1040 has a high logic level. In such a condition, the FX signal has
a voltage that is not forced to the voltage of the VCCP potential
or to the ground potential.
[0057] With reference to the logic circuit 1010, the Rx210act2F
signal is also provided to a logic circuit 1020, which also
receives a Rx210act1F signal from the logic circuit 1008. The logic
circuit 1020 includes transistors 1022-1025 coupled in series
between a power supply providing an internal potential (e.g., VDRV)
and a ground potential VSS. The transistors 1022 and 1024 are
provided the Rx210act2F signal from the logic circuit 1010 and the
transistor 1023 is provided the Rx210act1F signal from the logic
circuit 1008. The transistors 1025 and 1026 are coupled to internal
potentials (e.g., VCCP, VEQ). The logic circuit 1020 provides a low
logic level output signal when both the Rx210act1F signal and the
Rx210act2F signal are high logic levels, and provides a high logic
level output signal when the Rx210act2F signal is a low logic
level. The transistors 1025 and 1026 limit a current through the
logic circuit 1020 when operating.
[0058] The logic circuit 1020 provides the output signal to an
output circuit 1060, which provides the FXF signal. The output
circuit 1060 includes transistors 1062 and 1063 coupled in series
between a power supply providing an internal potential (e.g., VDRV)
and a ground potential VSS. The transistors 1062 and 1063 are
provided the output signal from the logic circuit 1020. The output
circuit 1060 provides the FXF signal having the complementary logic
level of the signal from the logic circuit 1020. For example, the
output circuit 1060 provides a low logic level FXF signal when the
signal from the logic circuit 1020 is a high logic level, and the
output circuit 1060 provides a high logic level FXF signal when the
signal from the logic circuit 1020 is a low logic level. An output
of the output circuit 1060 is coupled to its input by a transistor
1066, which is further coupled to an internal potential (e.g.,
VDRV). The transistor 1066 aids in latching a low logic level FXF
signal at the output of the output circuit 1060.
[0059] Operation of the driver circuit 1000 will be described with
reference to FIG. 11. FIG. 11 is a timing diagram of various
signals during operation of the driver circuit 1000 according to an
embodiment of the disclosure. The operation of the driver circuit
will be described in the context of a selected memory mat, with the
other memory mats being unselected.
[0060] FIG. 11 shows the selection signals Ract210 provided to the
logic circuit 1010 and to the logic circuit 1008. In the example of
FIG. 11, the float enable signal EnF is active (e.g., active low
logic level). The active float enable signal EnF may correspond to
a first mode. As will be described in more detail below, when in
the first mode, a floating FX signal is provided to unselected
memory mats. In contrast, when in a second mode (e.g., the float
enable signal EnF is inactive (inactive high logic level)) an FX
signal that is pulled high to an internal potential or pulled low
to a ground potential is provided to the word drivers of unselected
memory mats. Additionally, activation occurs at time T0 and
precharge is initiated at time T3.
[0061] Prior to time T0, the memory mats have not been selected, as
indicated by a low logic level MAT signal. As previously described,
the EnF signal is active, which results in the control circuit 1002
providing a low logic level MAT_Float_EnF signal to the signal
driver circuit 1004. The low logic level MAT_Float_EnF signal
causes the signal driver circuits 1004 for the Ract210 signals to
provide a FX signal having a floating voltage. Thus, the FX signals
provided by the signal driver circuits of the memory mat that will
be selected later in the example of FIG. 11 are floating. The
unselected memory mats remain inactive, as indicated in FIG. 11 by
the floating FX signals. The FXF signal provided by the signal
driver circuit 1004 is a high logic level due to the low logic
level Ract1 signal and the latched high logic level Rx210act2F
signal at the input of the circuit 1030.
[0062] With regards to the floating FX signal, the low logic level
MAT_Float_EnF signal causes the transistor 1054 of the output
circuit 1050 to be non-conductive, which prevents the output of the
output circuit 1050 from being pulled low to the ground potential.
The transistor 1052 is also non-conductive because a low logic
level output signal from the circuit 1030 is latched by the
transistor 1036, and results in a high logic level output signal
from the circuit 1040. As a result, the non-conductive transistor
1054 and the non-conductive transistor 1052 prevent the output of
the output circuit 1050 from being pulled low to the ground
potential or high to the internal potential. Instead, the output of
the output circuit 1050 is allowed to float to provide a floating
FX signal.
[0063] At time T0, a selected memory mat is activated, as indicated
by the MAT signal changing to a high logic level. The unselected
memory mats remain inactive, as indicated in FIG. 11 by the
continued floating FX signals. The high logic level MAT signal
causes the control circuit 1002 to provide a high logic level
MAT_Float_EnF signal to the signal driver circuits of the selected
memory mat. The high logic level MAT_Float_EnF signal causes the
transistor 1054 of the output circuit 1050 to be conductive, which
allows the output of the output circuit 1050 to be pulled high to
the internal potential or low to the ground potential based on the
logic level of the output signal provided by the circuit 1040. For
example, as shown in the example of FIG. 11, the transistor 1053
becomes conductive to pull the output of the output circuit 1050
low to the ground potential.
[0064] At time T1 the Ract1 signal becomes active to cause the
logic circuit 1008 to provide the Rx210act1F signal having a
complementary logic level of the Ract210 signal. At time T2, the
Ract2 signal becomes active to cause the logic circuit 1010 to
provide the Rx210act2F signal having a logic level based on the
logic level of the Ract210 signal. In the example of FIG. 11, the
Ract210 signal is shown to have a high logic level, which results
in a low logic level Rx210act2F signal. A high logic level Ract210
signal indicates that the corresponding subword line is selected
and should be driven to an active voltage. The low logic level
Rx210act2F signal causes the output of the output circuit 1050 to
be pulled high to the internal potential to provide a high logic
level FX signal, and causes the output of the output circuit 1060
to be pulled low to the ground potential to provide a low logic
level FXF signal, as illustrated in FIG. 11. Although not shown in
FIG. 11, when a low logic level Ract210 signal is provided to the
signal driver circuit 1004, the Rx210act2F signal has a high logic
level. A low logic level Ract210 signal indicates that the
corresponding subword line is not selected and should be driven to
an inactive voltage. The high logic level Rx210act2F signal causes
the output of the output circuit 1050 to be pulled low to the
ground potential to provide a low logic level FX signal, and causes
the output of the output circuit 1060 to be pulled high to the
internal potential to provide a high logic level FXF signal.
[0065] The FX and FXF signals may be provided to subword drivers in
some embodiments of the disclosure to selectively drive respective
subword lines, as previously discussed. As further shown in FIG.
11, the FX signal provided by the driver circuits 1000 of
unselected memory mats remain floating.
[0066] At time T3, a precharge operation to the selected memory mat
is initiated. The Ract2 signal becomes inactive, which causes the
logic circuit 1010 to provide a high logic level Rx210act2F signal
regardless of the logic level of the Ract210 signal. The high logic
level Rx210act2F signal causes the output of the output circuit
1050 to be pulled low to the ground potential to provide a low
logic level FX signal. At time T4, the Ract1 signal becomes
inactive, which causes the logic circuit 1008 to provide a high
logic level Rx210act1F signal regardless of the logic level of the
Ract210 signal. The high logic level Rx210act1F signal, along with
the a high logic level Rx210act2F signal, causes the output of the
output circuit 1060 to be pulled high to the internal potential to
provide a high logic level FXF signal.
[0067] At time T5, the selected memory mat becomes inactive as
indicated by the MAT signal changing to a low logic level. The low
logic level MAT signal causes the control circuit 1002 to provide a
low logic level MAT_Float_EnF signal to the signal driver circuit
1004 of the formerly selected memory mat. The transistor 1054 of
the output circuit 1050 becomes non-conductive due to the low logic
level MAT_Float_EnF signal, and the high logic level Rx210act2F
signal (as previously discussed with reference to time T4) causes
the transistor 1052 of the output circuit 1050 to be
non-conductive. As a result, the non-conductive transistor 1052 and
the non-conductive transistor 1054 prevent the output of the output
circuit 1050 to be pulled high to the internal potential or low to
the ground potential. Instead, the output of the output circuit
1050 is allowed to float to provide a floating FX signal.
[0068] In the example of FIG. 11, the Ract210 signal is shown
having a high logic level. It will be appreciated, however, that
the Ract210 signal may also have a low logic level. For example,
some Ract210 signals of the selection signals (e.g.,
Ract210<7:0>may have low logic levels and the respective
signal driver circuits provide low logic level FX signals (and high
logic level FXF signals) and other Ract210 signals of the selection
signals may have high logic levels and the respective signal driver
circuits provide high logic level FX signals (and low logic level
FXF signals).
[0069] The floating voltage of the FX signal prior to time T0 and
following time T5 in the example of FIG. 5 may reduce leakage
currents compared to the signal driver circuit 1004 providing a FX
signal having a voltage corresponding to, for example, a ground
potential. For example, a floating FX signal provided to the
subword drivers of unselected memory mats may reduce leakage
currents in circuits of the subword drivers. In such a case, a low
logic level FX signal may cause leakage currents in circuits that
are provided the FX signal (e.g., subword drivers). However, by
providing a FX signal having a floating voltage the condition for
causing leakage currents may be mitigated, which in turn, may
reduce leakage currents.
[0070] The voltage level of the floating FX signal may be based on
various factors, for example, transistor characteristics of the
transistors included in the output circuit 1050, the voltage of the
internal potentials (e.g., VCCP, VDRV, etc.), leakage currents and
impedances of the various circuits, etc. In some embodiments of the
disclosure, the voltage of the floating FX signal may be greater
than the ground potential. In some embodiments of the disclosure,
the voltage of the floating FX signal is greater than the internal
potential provided to the output circuit 1060 (e.g., VDRV). In some
embodiments of the disclosure, the voltage of the floating FX
signal is greater than the internal potential provided to the
output circuit 1060, but less than the internal potential provided
to the output circuit 1050 (e.g., VCCP).
[0071] From the foregoing it will be appreciated that, although
specific embodiments of the disclosure have been described herein
for purposes of illustration, various modifications may be made
without deviating from the spirit and scope of the disclosure.
Accordingly, the scope of the disclosure should not be limited any
of the specific embodiments described herein.
* * * * *