U.S. patent application number 16/128103 was filed with the patent office on 2019-07-18 for semiconductor memory device and method for driving same.
This patent application is currently assigned to TOSHIBA MEMORY CORPORATION. The applicant listed for this patent is TOSHIBA MEMORY CORPORATION. Invention is credited to Kotaro FUJII, Masaru Kito, Yasuhiro Uchiyama.
Application Number | 20190221576 16/128103 |
Document ID | / |
Family ID | 67214292 |
Filed Date | 2019-07-18 |
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United States Patent
Application |
20190221576 |
Kind Code |
A1 |
FUJII; Kotaro ; et
al. |
July 18, 2019 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME
Abstract
A semiconductor memory device includes a first electrode film, a
second electrode film separated from the first electrode film in a
first direction, a third electrode film separated from the second
electrode film in the first direction, a fourth electrode film
separated from the third electrode film in the first direction, and
a first and a second semiconductor members extending in the first
direction. The second electrode film includes a first conductive
portion, an insulating portion, and a second conductive portion
arranged along a second direction. The first semiconductor member
pierces the first, third and fourth electrode films and the
insulating portion of the second electrode film. The second
semiconductor member pierces the first, third and fourth electrode
films, and the first conductive portion or the second conductive
portion of the second electrode film.
Inventors: |
FUJII; Kotaro; (Yokkaichi,
JP) ; Uchiyama; Yasuhiro; (Yokkaichi, JP) ;
Kito; Masaru; (Kuwana, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOSHIBA MEMORY CORPORATION |
Minato-ku |
|
JP |
|
|
Assignee: |
TOSHIBA MEMORY CORPORATION
Minato-ku
JP
|
Family ID: |
67214292 |
Appl. No.: |
16/128103 |
Filed: |
September 11, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/11565 20130101;
H01L 27/11582 20130101; H01L 27/1157 20130101 |
International
Class: |
H01L 27/11582 20060101
H01L027/11582; H01L 27/1157 20060101 H01L027/1157 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 16, 2018 |
JP |
2018-004761 |
Claims
1. A semiconductor memory device, comprising: a first electrode
film; a second electrode film separated from the first electrode
film in a first direction, the second electrode film including a
first conductive portion, an insulating portion, and a second
conductive portion arranged along a second direction, the second
direction crossing the first direction; a third electrode film
separated from the second electrode film in the first direction; a
fourth electrode film separated from the third electrode film in
the first direction; a first semiconductor member extending in the
first direction and piercing the first electrode film, the
insulating portion of the second electrode film, the third
electrode film, and the fourth electrode film; a second
semiconductor member extending in the first direction and piercing
the first electrode film, the first conductive portion or the
second conductive portion of the second electrode film, the third
electrode film, and the fourth electrode film; a first charge
storage member provided between the fourth electrode film and the
first semiconductor member; and a second charge storage member
provided between the fourth electrode film and the second
semiconductor member.
2. The device according to claim 1, wherein one end of the first
semiconductor member on the first electrode film side and one end
of the second semiconductor member on the first electrode film side
are electrically connected to a common interconnect.
3. The device according to claim 2, further comprising a drive
circuit applying a first potential to set a portion of the first
semiconductor member surrounded with the insulating portion to a
conducting state when selecting the first semiconductor member from
among the first semiconductor member and the second semiconductor
member, the first potential being applied to portions of the first
electrode film and the third electrode film surrounding the first
semiconductor member.
4. The device according to claim 3, wherein when selecting the
first semiconductor member, the drive circuit applies, to the
second electrode film, a potential to set a portion of the second
semiconductor member surrounded with the first conductive portion
or the second conductive portion to a nonconducting state.
5. The device according to claim 2, further comprising: a fifth
electrode film provided between the third electrode film and the
fourth electrode film and separated from the third electrode film
and the fourth electrode film; a third semiconductor member
extending in the first direction and piercing the first electrode
film, the first conductive portion or the second conductive portion
of the second electrode film, the third electrode film, the fifth
electrode film, and the fourth electrode film; and a third charge
storage member provided between the fourth electrode film and the
third semiconductor member, the third electrode film including a
first conductive portion, an insulating portion, and a second
conductive portion arranged along the second direction, the first
semiconductor member piercing the first conductive portion or the
second conductive portion of the third electrode film, the second
semiconductor member piercing the insulating portion of the third
electrode film, the third semiconductor member piercing the second
conductive portion or the first conductive portion of the third
electrode film.
6. The device according to claim 5, further comprising a drive
circuit applying a first potential to set a portion of the first
semiconductor member surrounded with the insulating portion of the
second electrode film to a conducting state when selecting the
first semiconductor member from among the first to third
semiconductor members, the first potential being applied to a
portion of the first electrode film surrounding the first
semiconductor member and to the first conductive portion or the
second conductive portion of the third electrode film.
7. The device according to claim 6, wherein the first semiconductor
member further pierces the fifth electrode film, and the drive
circuit applies a second potential to set a portion of the first
semiconductor member surrounded with the fifth electrode film to a
conducting state when selecting the first semiconductor member, the
second potential being lower than the first potential and being
applied to a portion of the fifth electrode film surrounding the
first semiconductor member.
8. The device according to claim 5, wherein the second
semiconductor member further pierces the fifth electrode film, and
the device further comprises a drive circuit applying a first
potential to set a portion of the second semiconductor member
surrounded with the insulating portion of the third electrode film
to a conducting state when selecting the second semiconductor
member from among the first to third semiconductor members, the
first potential being applied to a portion of the fifth electrode
film surrounding the second semiconductor member and the first
conductive portion or the second conductive portion of the second
electrode film.
9. The device according to claim 8, wherein when selecting the
second semiconductor member, the drive circuit applies, to the
first conductive portion and the second conductive portion of the
third electrode film, a potential to set a portion of the first
semiconductor member surrounded with the first conductive portion
or the second conductive portion of the third electrode film to a
nonconducting state and to set a portion of the third semiconductor
member surrounded with the second conductive portion or the first
conductive portion of the third electrode film to a nonconducting
state.
10. The device according to claim 5, wherein the first
semiconductor member further pierces the fifth electrode film, and
the device further comprises a drive circuit configured to
independently apply potentials respectively to the first electrode
film, the first conductive portion or the second conductive portion
of the third electrode film, and the fifth electrode film pierced
by the first semiconductor member.
11. The device according to claim 10, wherein the second
semiconductor member further pierces the fifth electrode film, and
the drive circuit is configured to independently apply potentials
respectively to the first electrode film, the first conductive
portion or the second conductive portion of the second electrode
film, and the fifth electrode film pierced by the second
semiconductor member.
12. The device according to claim 11, wherein the drive circuit
applies a common potential to a portion of the fourth electrode
film surrounding the first semiconductor member, a portion of the
fourth electrode film surrounding the second semiconductor member,
and a portion of the fourth electrode film surrounding the third
semiconductor member.
13. The device according to claim 5, further comprising a sixth
electrode film provided between the fifth electrode film and the
fourth electrode film and separated from the fifth electrode film
and the fourth electrode film, the fifth electrode film including a
conductive portion and an insulating portion arranged along the
second direction, the first semiconductor member piercing the
conductive portion of the fifth electrode film, the second
semiconductor member piercing the conductive portion of the fifth
electrode film, the third semiconductor member piercing the
insulating portion of the fifth electrode film.
14. The device according to claim 1, wherein the insulating portion
of the second electrode film includes: two first portions extending
in a third direction and being made from a first material, the
third direction crossing the first direction and the second
direction; and a second portion disposed between the two first
portions, the second portion being made from a second material
having a relative dielectric constant higher than a relative
dielectric constant of the first material.
15. The device according to claim 2, further comprising a
conductive film separated from the fourth electrode film in the
first direction, another end of the first semiconductor member and
another end of the second semiconductor member being connected to
the conductive film.
16. A semiconductor memory device, comprising: two first select
gate electrode films arranged above a substrate to be separated
from each other in a first direction crossing a substrate surface;
n second select gate electrode films arranged between the two first
select gate electrode films (n being an integer of 2 or more), each
of the n second select gate electrode films including a conductive
portion and an insulating portion, the insulating portion being
disposed at mutually-different position in a second direction among
the second select gate electrode films, the second direction
crossing the first direction; a word line electrode film arranged
between the substrate and the two first select gate electrode
films; n semiconductor members each piercing the insulating portion
of one of the second select gate electrode films, the conductive
portion of the other second select gate electrode film, the two
first select gate electrode films, and the word line electrode
film, the n semiconductor members each piercing the
mutually-different insulating portion of the second select gate
electrode films; and charge storage members provided respectively
between the word line electrode film and the semiconductor
members.
17. The device according to claim 16, further comprising a drive
circuit applying a potential to set a portion of one of the
semiconductor members surrounded with one of the second select gate
electrode films to a conducting state when selecting the one of the
semiconductor members, the one of the second select gate electrode
films including the insulating portion pierced by the one of the
semiconductor members, the one of the second select gate electrode
films being interposed between other second select gate electrode
films or between another second select gate electrode film and one
of the two first select gate electrode films, the potential being
applied to portions of the other second select gate electrode films
surrounding the one of the semiconductor members or to portions of
the other second select gate electrode film and the one of the two
first select gate electrode films surrounding the one of the
semiconductor members.
18. A method for driving a semiconductor memory device, the device
including a first electrode film, a second electrode film, a third
electrode film, a fourth electrode film, a first semiconductor
member, and a first charge storage member, the second electrode
film being separated from the first electrode film in a first
direction and including a first conductive portion, an insulating
portion, and a second conductive portion arranged along a second
direction crossing the first direction, the third electrode film
being separated from the second electrode film in the first
direction, the fourth electrode film being separated from the third
electrode film in the first direction, the first semiconductor
member extending in the first direction and piercing the first
electrode film, the insulating portion of the second electrode
film, the third electrode film, and the fourth electrode film, the
first charge storage member being provided between the fourth
electrode film and the first semiconductor member, the method
comprising applying a first potential to set a portion of the first
semiconductor member surrounded with the insulating portion to a
conducting state when selecting the first semiconductor member, the
first potential being applied to portions of the first electrode
film and the third electrode film surrounding the first
semiconductor member.
19. The method according to claim 18, wherein the device further
includes a fifth electrode film provided between the third
electrode film and the fourth electrode film and separated from the
third electrode film and the fourth electrode film, the first
semiconductor member further pierces the fifth electrode film, and
the method further comprises applying a second potential to set a
portion of the first semiconductor member surrounded with the fifth
electrode film to a conducting state when selecting the first
semiconductor member, the second potential being lower than the
first potential and being applied to a portion of the fifth
electrode film surrounding the first semiconductor member.
20. The method according to claim 18, wherein a ground potential is
applied to the first conductive portion and the second conductive
portion of the second electrode film when selecting the first
semiconductor member.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is based upon and claims the benefit of
priority from Japanese Patent Application NO. 2018-004761, filed on
Jan. 16, 2018; the entire contents of which are incorporated herein
by reference.
FIELD
[0002] Embodiments described herein relate generally to a
semiconductor memory device and a method for driving same.
BACKGROUND
[0003] In recent years, a stacked semiconductor memory device has
been proposed in which memory cells are integrated
three-dimensionally. In such a stacked semiconductor memory device,
a stacked body in which electrode films and insulating films are
stacked alternately is provided on a semiconductor substrate; and
semiconductor members that pierce the stacked body are provided.
Memory cell transistors are formed at each crossing portion between
the electrode films and the semiconductor members. Even higher
integration is necessary for such a stacked semiconductor memory
device as well.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a cross-sectional view showing a semiconductor
memory device according to an embodiment;
[0005] FIG. 2 is a cross-sectional view showing a semiconductor
memory device according to the embodiment;
[0006] FIG. 3 is a schematic cross-sectional view showing a
positional relationship between columnar members and drain-side
select gates of the embodiment;
[0007] FIG. 4 is a cross-sectional view showing the columnar member
and peripheral portion of the columnar member of the
embodiment;
[0008] FIG. 5 is a schematic cross-sectional view showing a method
for driving the semiconductor memory device according to the
embodiment;
[0009] FIG. 6 is a schematic cross-sectional view showing a method
for driving the semiconductor memory device according to the
embodiment;
[0010] FIG. 7 is a schematic cross-sectional view showing a method
for driving the semiconductor memory device according to the
embodiment;
[0011] FIG. 8 is a schematic cross-sectional view showing a method
for driving the semiconductor memory device according to the
embodiment;
[0012] FIGS. 9A and 9B are cross-sectional views showing a method
for manufacturing the semiconductor memory device according to the
embodiment;
[0013] FIGS. 10A and 10B are cross-sectional views showing a method
for manufacturing the semiconductor memory device according to the
embodiment;
[0014] FIGS. 11A and 11B are cross-sectional views showing a method
for manufacturing the semiconductor memory device according to the
embodiment;
[0015] FIG. 12 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment;
[0016] FIG. 13 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment;
[0017] FIG. 14 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment;
[0018] FIG. 15 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment;
[0019] FIG. 16 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment; and
[0020] FIG. 17 is a cross-sectional view showing a method for
manufacturing the semiconductor memory device according to the
embodiment;
DETAILED DESCRIPTION
[0021] According to one embodiment, a semiconductor memory device
includes a first electrode film, a second electrode film separated
from the first electrode film in a first direction, a third
electrode film separated from the second electrode film in the
first direction, a fourth electrode film separated from the third
electrode film in the first direction, a first semiconductor member
extending in the first direction, a second semiconductor member
extending in the first direction, a first charge storage member
provided between the fourth electrode film and the first
semiconductor member, and a second charge storage member provided
between the fourth electrode film and the second semiconductor
member. The second electrode film includes a first conductive
portion, an insulating portion, and a second conductive portion
arranged along a second direction, the second direction crossing
the first direction. The first semiconductor member pierces the
first electrode film, the insulating portion of the second
electrode film, the third electrode film, and the fourth electrode
film. The second semiconductor member pierces the first electrode
film, the first conductive portion or the second conductive portion
of the second electrode film, the third electrode film, and the
fourth electrode film.
[0022] Embodiments will now be described.
[0023] FIG. 1 and FIG. 2 are cross-sectional views showing a
semiconductor memory device according to the embodiment.
[0024] The semiconductor memory device according to the embodiment
is, for example, stacked NAND flash memory.
[0025] As shown in FIG. 1, a silicon substrate 10 is provided in
the semiconductor memory device 1 according to the embodiment. For
example, an inter-layer insulating film 11 that is made of silicon
oxide (SiO) is provided on the silicon substrate 10.
[0026] In the specification hereinbelow, an XYZ orthogonal
coordinate system is employed for convenience of description. The
arrangement direction of the silicon substrate 10 and the
inter-layer insulating film 11 is taken as a "Z-direction;" and two
mutually-orthogonal directions orthogonal to the Z-direction are
taken as an "X-direction" and a "Y-direction." Although a direction
that is in the Z-direction from the silicon substrate 10 toward the
inter-layer insulating film 11 also is called "up" and the reverse
direction also is called "down," these expressions are for
convenience and are independent of the direction of gravity.
[0027] In the specification, a "silicon substrate" is a substrate
including silicon (Si) as a major component. This is similar for
the other constituents as well; and in the case where the material
name is included in the name of the constituent, the material is a
major component of the constituent.
[0028] A drive circuit 15 that includes a MOSFET
(Metal-Oxide-Semiconductor Field-Effect Transistor) 12, an
interconnect 13, and the like is formed inside the inter-layer
insulating film 11 and the upper layer portion of the silicon
substrate 10.
[0029] A source electrode film 20 is provided on the inter-layer
insulating film 11. The source electrode film 20 spreads along the
XY plane. The source electrode film 20 is, for example, a stacked
film made of a metal film and a polysilicon film.
[0030] An insulating film 21 that is made of, for example, silicon
oxide is provided on the source electrode film 20; and an electrode
film 22 that is made of, for example, polysilicon is provided on
the insulating film 21. A stacked body 30 in which multiple
insulating films 24 and multiple electrode films 25 are stacked
alternately one layer at a time is provided on the electrode film
22. The stacking direction of the insulating films 24 and the
electrode films 25 is the Z-direction. For example, the insulating
films 24 are formed of silicon oxide. At least a portion of the
electrode films 25 is formed of a metal material, e.g., tungsten
(W). The detailed configurations of the electrode films 25 are
described below.
[0031] As shown in FIG. 1 and FIG. 2, multiple insulating plates 31
are arranged along the Y-direction on the source electrode film 20.
The insulating plates 31 each are made of, for example, silicon
oxide and spread along the XZ plane. The insulating plates 31
divide the insulating film 21, the electrode film 22, and the
stacked body 30 in the Y-direction; and the lower ends of the
insulating plates 31 contact the source electrode film 20. In the
semiconductor memory device 1, for example, the portion of the
stacked body 30 subdivided by the insulating plates 31 functions as
a block included in the minimum unit of the data erase.
[0032] Columnar members 40 that extend in the Z-direction are
provided inside the insulating film 21, the electrode film 22, and
the stacked body 30. The configurations of the columnar members 40
are columnar configurations, e.g., substantially circular columnar
configurations having the axis directions in the Z-direction. When
viewed from the Z-direction, for example, the columnar members 40
are arranged in a staggered configuration. The detailed
configurations of the columnar members 40 are described below.
[0033] The configurations of the electrode films 25 will now be
described in detail.
[0034] FIG. 3 is a schematic cross-sectional view showing the
positional relationship between the columnar members and the
drain-side select gates of the embodiment.
[0035] As shown in FIG. 1 and FIG. 3, the function of each of the
electrode films 25 is set according to the position in the
Z-direction. In the example shown in the embodiment, the three
electrode films 25 of the first to third levels from the bottom
function as source-side select gates (SGS). The three electrode
films 25 of the fourth to sixth levels from the bottom function as
dummy electrode films DS for relaxing the electric field.
[0036] On the other hand, the eight electrode films 25 of the first
to eighth levels from the top function as drain-side select gates
(SGD). The three electrode films 25 of the ninth to eleventh levels
from the top function as dummy electrode films DD for relaxing the
electric field. Otherwise, the electrode films 25, i.e., the
electrode films 25 of the levels from the seventh level from the
bottom to the twelfth level from the top function as word lines
(WL). In FIG. 1, the number of word lines drawn is lower than the
actual number.
[0037] Among the electrode films 25 functioning as the drain-side
select gates (SGD), i.e., the electrode films 25 of the first to
eighth levels from the top, a conductive portion 25a, an insulating
portion 25b, and a conductive portion 25c are provided in this
order along the Y-direction in each of the four electrode films 25
of the second to fifth levels from the top. The configurations of
the conductive portion 25a, the insulating portion 25b, and the
conductive portion 25c each are band configurations extending in
the X-direction. The conductive portion 25a and the conductive
portion 25c are insulated from each other by the insulating portion
25b. The conductive portion 25a of the electrode film 25 of the
second level from the top and the conductive portion 25c of the
electrode film 25 of the fifth level from the top may not be
provided. In such a case, the insulating portions 25b of the
electrode films 25 of the second level and the fifth level from the
top contact the insulating plate 31.
[0038] The positions in the Y-direction of the insulating portions
25b are shifted from each other between the electrode films 25.
However, when viewed from the Z-direction, the Y-direction end
portion of the insulating portion 25b of one electrode film 25 may
overlap the Y-direction end portion of the insulating portion 25b
of an adjacent electrode film 25. FIG. 2 shows the electrode film
25 of the third level from the top.
[0039] The conductive portions 25a and 25c are formed of a metal
material, e.g., tungsten. Two end portions 25e and one central
portion 25f are provided in the insulating portion 25b. The end
portions 25e are disposed at the two Y-direction end portions of
the insulating portion 25b, extend in the X-direction, and are made
of, for example, silicon oxide (SiO). The central portion 25f is
disposed between the two end portions 25e, extends in the
X-direction, and is made of, for example, silicon nitride (SiN).
The relative dielectric constant of the central portion 25f is
higher than the relative dielectric constants of the end portions
25e.
[0040] Among the electrode films 25 included in the stacked body
30, the electrode films 25 other than the four electrode films 25
of the second to fifth levels from the top do not include the
insulating portion and are entirely formed of a metal material,
e.g., tungsten.
[0041] For convenience of description in the specification, the
eight electrode films 25 that function as the drain-side select
gates (SGD) are marked with the reference numerals of the
"electrode film SGD1" to the "electrode film SGD8" in order from
the top. Also, the electrode films 25 (the electrode films SGD2 to
SGD5) in which the insulating portion 25b is formed are
differentiated by marking the end part of the reference numeral
with "L," "C," and "R" for the conductive portion 25a, the
insulating portion 25b, and the conductive portion 25c. Although
the insulating portion 25b is insulative, the insulating portion
25b is called an "electrode film" for convenience of description
because the insulating portion 25b functions artificially as gates
of drain-side select transistors as described below.
[0042] In other words, for the electrode film 25 of the second
level from the top, the conductive portion 25a is taken as the
"electrode film SGD2L;" the insulating portion 25b is taken as the
"electrode film SGD2C;" and the conductive portion 25c is taken as
the "electrode film SGD2R." For the electrode film 25 of the third
level from the top, the conductive portion 25a is taken as the
"electrode film SGD3L;" the insulating portion 25b is taken as the
"electrode film SGD3C;" and the conductive portion 25c is taken as
the "electrode film SGD3R." For the electrode film 25 of the fourth
level from the top, the conductive portion 25a is taken as the
"electrode film SGD4L;" the insulating portion 25b is taken as the
"electrode film SGD4C;" and the conductive portion 25c is taken as
the "electrode film SGD4R." For the electrode film 25 of the fifth
level from the top, the conductive portion 25a is taken as the
"electrode film SGD5L;" the insulating portion 25b is taken as the
"electrode film SGD5C;" and the conductive portion 25c is taken as
the "electrode film SGD5R."
[0043] The electrode films 25 each are connected to the drive
circuit 15. Also, for the electrode films 25 in which the
conductive portions 25a and 25c are provided, the conductive
portion 25a and the conductive portion 25c each are connected to
the drive circuit 15.
[0044] Each of the columnar members 40 pierces the insulating
portion 25b of one electrode film 25 of the electrode films SGD2 to
SGD5 and pierces the conductive portion 25a or 25c of the remaining
electrode films 25 of the electrode films SGD2 to SGD5. There is a
constant relationship between the position in the Y-direction of
one columnar member 40 and the position in the Z-direction of the
insulating portion 25b pierced by the one columnar member 40.
[0045] As shown in FIG. 3, the multiple columnar members 40 that
are disposed between two mutually-adjacent insulating plates 31,
i.e., the multiple columnar members 40 that are disposed inside the
stacked body 30 included in one block between the two
mutually-adjacent insulating plates 31 (referring to FIG. 1), are
classified as four groups G0 to G3. The columnar members 40 that
belong to each group are disposed in a region having a band
configuration extending in the X-direction. In other words, the
positions in the Y-direction of the columnar members 40 belonging
to one group are respectively different from the positions in the
Y-direction of the columnar members 40 belonging to another group.
Therefore, the columnar members 40 that belong to the same group
pierce the same insulating portion 25b; and the columnar members 40
that belong to mutually-different groups pierce mutually-different
insulating portions 25b.
[0046] The columnar members 40 that belong to the group G0 pierce
the electrode film SGD2C, the electrode film SGD3L, the electrode
film SGD4L, and the electrode film SGD5L.
[0047] The columnar members 40 that belong to the group G1 pierce
the electrode film SGD2R, the electrode film SGD3C, the electrode
film SGD4L, and the electrode film SGD5L.
[0048] The columnar members 40 that belong to the group G2 pierce
the electrode film SGD2R, the electrode film SGD3R, the electrode
film SGD4C, and the electrode film SGD5L.
[0049] The columnar members 40 that belong to the group G3 pierce
the electrode film SGD2R, the electrode film SGD3R, the electrode
film SGD4R, and the electrode film SGD5C.
[0050] Although an example is shown in the embodiment in which the
columnar members 40 in the region interposed between the two
insulating plates 31 are classified as the four groups G0 to G3 and
the insulating portions 25b are provided in four electrode films
25, the invention is not limited thereto. In other words, the
columnar members 40 may be classified as three or fewer groups or
five or more groups. In such a case, at least the same number of
insulating portions 25b as the number of groups is provided and
disposed at different positions in the Y-direction.
[0051] Stated more generally, in the case where the columnar
members 40 are classified as n groups wherein n is an integer of 2
or more, at least n electrode films 25 in which the insulating
portion 25b is provided are disposed between at least two electrode
films 25 in which the insulating portion is not provided. Then,
when piercing the electrode films 25 functioning as the drain-side
select gates (SGD), each of the columnar members 40 pierces the
insulating portion 25b of one electrode film 25 and pierces the
conductive portion 25a or the conductive portion 25c of the
remaining (n-1) electrode films 25. Also, the columnar members 40
that belong to the same group pierce the same insulating portion
25b; and the columnar members 40 that belong to a different group
pierce a different insulating portion 25b. In the configuration
recited above, the entire region of the electrode film 25 can
function artificially as the drain-side select gate (SGD) as
described below even though the insulating portion 25b is provided
in the electrode film 25 and interposed between the conductive
portion 25a and the conductive portion 25c; and such a
configuration is particularly effective in the case where n is an
integer of 3 or more and the integration of the memory cell
transistors in the region interposed between the two insulating
plates 31 is increased.
[0052] The configuration of the columnar member 40 will now be
described.
[0053] FIG. 4 is a cross-sectional view showing the columnar member
and the peripheral portion of the columnar member of the
embodiment.
[0054] As shown in FIG. 4, a core member 41 that is made of, for
example, silicon oxide is provided in the columnar member 40. The
configuration of the core member 41 is a substantially circular
column. A silicon pillar 42 is provided as a semiconductor member
on the side surface of the core member 41. The configuration of the
silicon pillar 42 is, for example, a circular tube. The lower end
portion of the silicon pillar 42 is connected to the source
electrode film 20. A tunneling insulating film 43, a charge storage
film 44, and a silicon oxide layer 46 are provided in this order on
the side surface of the silicon pillar 42. The tunneling insulating
film 43, the charge storage film 44, and the silicon oxide layer 46
are disposed on substantially the entire side surface of the
silicon pillar 42; and the configurations of the tunneling
insulating film 43, the charge storage film 44, and the silicon
oxide layer 46 are circular tubes. The columnar member 40 includes
the core member 41, the silicon pillar 42, the tunneling insulating
film 43, the charge storage film 44, and the silicon oxide layer
46.
[0055] On the other hand, an aluminum oxide layer 47 is formed on
the upper surface of the electrode film 25, on the lower surface of
the electrode film 25, and on the side surface of the electrode
film 25 facing the silicon pillar 42. For the electrode film 25
that is made of the conductive portion 25a, the insulating portion
25b, and the conductive portion 25c, the aluminum oxide layer 47 is
formed on the upper surfaces of the conductive portions 25a and
25c, on the lower surfaces of the conductive portions 25a and 25c,
on the side surfaces of the conductive portions 25a and 25c facing
the silicon pillar 42, and on the side surfaces of the conductive
portions 25a and 25c facing the end portion 25e. However, the
aluminum oxide layer 47 is not formed on the upper surface of the
insulating portion 25b or on the lower surface of the insulating
portion 25b. A blocking insulating film 45 is formed of the silicon
oxide layer 46 and the aluminum oxide layer 47.
[0056] Although the tunneling insulating film 43 normally is
insulative, the tunneling insulating film 43 is a film in which a
tunneling current flows when a prescribed voltage within the range
of the drive voltage of the semiconductor memory device 1 is
applied and is, for example, a single-layer silicon oxynitride film
or an ONO film in which a silicon oxide layer, a silicon nitride
layer, and a silicon oxide layer are stacked in this order. The
charge storage film 44 is a charge storage member that can store a
charge, is made from, for example, a material having trap sites of
electrons, and is made of, for example, silicon nitride (SiN). The
blocking insulating film 45 is a film in which a current
substantially does not flow even when a voltage within the range of
the drive voltage of the semiconductor memory device 1 is applied.
Thus, a memory cell that is formed at each crossing portion between
the electrode films 25 and the columnar members 40 has a vertical
transistor structure in which the periphery of the silicon pillar
42 is surrounded with the electrode film 25 used to form the word
line (WL) so that a memory film including the tunneling insulating
film 43, the charge storage film 44, and the blocking insulating
film 45 is interposed. In other words, in the memory cell that has
the vertical transistor structure, the silicon pillar 42 is, for
example, a channel body; and the electrode film 25 functions as a
control gate. The charge storage film 44 functions as a data
storage layer that stores the charge injected from the silicon
pillar 42.
[0057] As shown in FIG. 1, an insulating film 50 that is made of,
for example, silicon oxide is provided on the stacked body 30; and
a plug 51 and a bit line 52 are provided inside the insulating film
50. The bit line 52 extends in the Y-direction and is connected to
the silicon pillar 42 via the plug 51. Among the columnar members
40 belonging to each of the groups G0 to G3, the silicon pillar 42
of one columnar member 40 is connected to one bit line 52. In other
words, one silicon pillar 42 belonging to the group G0, one silicon
pillar 42 belonging to the group G1, one silicon pillar 42
belonging to the group G2, and one silicon pillar 42 belonging to
the group G3 are connected to one bit line 52.
[0058] A method for driving the semiconductor memory device
according to the embodiment will now be described.
[0059] FIG. 5 to FIG. 8 are schematic cross-sectional views showing
the method for driving the semiconductor memory device according to
the embodiment.
[0060] In the semiconductor memory device 1 according to the
embodiment as shown in FIG. 1 to FIG. 4, the memory cell
transistors are formed at the crossing portions between the word
lines (WL) and the columnar members 40. Source-side select
transistors are formed at the crossing portions between the
source-side select gates (SGS) and the columnar members 40.
Drain-side select transistors are formed at the crossing portions
between the drain-side select gates (SGD) and the columnar members
40. Then, the programming, reading, and erasing of data to and from
the memory cell transistors are performed by the drive circuit 15
supplying the prescribed potentials to the source electrode film
20, the electrode film 22, the electrode films 25, and the bit
lines 52.
[0061] In the program operation, the drive circuit 15 sets the
source-side select transistors to the nonconducting state by
applying an off-potential to the source-side select gates (SGS),
applies, for example, a ground potential to the selected one bit
line 52, sets the drain-side select transistors belonging to the
selected one group of the groups G0 to G3 to the conducting state,
sets the drain-side select transistors belonging to the other
groups to the nonconducting state, and applies a programming
potential that is higher than the potential of the bit line 52 to
the selected one word line (WL). Thereby, in the selected memory
cell transistor, electrons are injected from the silicon pillar 42
into the charge storage film 44 via the tunneling insulating film
43; and a value is programmed to the memory cell transistor. At
this time, multiple bits may be programmed to the memory cell
transistor by precisely controlling the threshold of the memory
cell transistor by finely adjusting the potentials applied to the
electrode film SGD7 and the electrode film SGD8.
[0062] In the read operation, the drive circuit 15 applies, for
example, the ground potential to the source electrode film 20, sets
the source-side select transistors to the conducting state by
applying an on-potential to the source-side select gates (SGS),
applies a potential that is slightly higher than the potential of
the source electrode film 20 to the selected one bit line 52, sets
the drain-side select transistors belonging to the selected one
group of the groups G0 to G3 to the conducting state, sets the
drain-side select transistors belonging to the other groups to the
nonconducting state, applies a read potential to the selected one
word line (WL) so that the current that flows is different
according to the value programmed to the memory cell transistor,
and applies a conduction potential to the other word lines (WL) so
that a current flows regardless of the values programmed to the
memory cell transistors. Also, by applying an appropriate potential
to the electrode film 22, a channel layer is induced in the
portions of the silicon pillars 42 surrounded with the electrode
film 22; and the portions are set to a state in which the electrons
can flow. Then, the value that is programmed to the selected memory
cell transistor is read by evaluating the magnitude of the current
flowing in the source electrode film 20 from the bit line 52.
[0063] Thus, in the program operation and the read operation, the
drain-side select transistors that belong to one group of the
groups G0 to G3 are set to the conducting state; and the drain-side
select transistors that belong to the other groups are set to the
nonconducting state. In other words, a common potential is applied
to the electrode films 25 functioning as the word lines (WL) in the
regions corresponding to each of the groups G0 to G3; and on the
other hand, particularly for the electrode films 25 including the
conductive portions 25a and 25c insulated from each other by the
insulating portion 25b, one group of the groups G0 to G3 is
selected by individually controlling the potentials of the
conductive portions 25a and 25c. These operations will now be
described. The erase operation is performed collectively for the
entire block; therefore, the selection of the group is
unnecessary.
[0064] The potentials that the drive circuit 15 applies to the
electrode films SGD to select the groups will now be described.
[0065] An off-potential Voff is a potential such that the
drain-side select transistors formed at the crossing portions
between the electrode film SGD and the columnar members 40 are set
to the nonconducting state by applying the off-potential Voff to
the electrode film SGD. An on-potential Von is a potential such
that the drain-side select transistors formed at the crossing
portions between the electrode film SGD and the columnar members 40
are set to the conducting state by applying the on-potential Von to
the electrode film SGD. A high on-potential VonH is a potential
such that the drain-side select transistors formed at the crossing
portions between the insulating portion 25b and the columnar
members 40 are set to the conducting state by a fringe electric
field caused by applying the high on-potential VonH to the two
electrode films SGD having the insulating portion 25b interposed
between the two electrode films SGD in the Z-direction. In an
example, the off-potential Voff is the ground potential (0 V
(volts)); the on-potential Von is 4 to 5 V; and the high
on-potential VonH is 6 to 7 V. However, the on-potentials Von that
are applied to the electrode film SGD7 and the electrode film SGD8
may be finely adjusted according to the value programmed to the
memory cell transistor.
[0066] As shown in FIG. 5, in the case where the group G0 is
selected, the high on-potential VonH is applied to the electrode
films SGD1 and SGD3L. Thereby, the drain-side select transistors
that are formed at the crossing portions between the columnar
members 40 belonging to the group G0 and the electrode film SGD2C
interposed between the electrode film SGD1 and the electrode film
SGD3L in the Z-direction are set to the conducting state by the
fringe electric field of the electrode films SGD1 and SGD3L. Also,
the drain-side select transistors that are formed at the crossing
portions between the electrode film SGD1 and these columnar members
40 and the drain-side select transistors formed at the crossing
portions between the electrode film SGD3L and these columnar
members 40 are set to the conducting state.
[0067] The on-potential Von is applied to the electrode films
SGD4L, SGD5L, SGD6, SGD7, and SGD8. Thereby, the drain-side select
transistors that are formed respectively at the crossing portions
between the electrode films SGD4L, SGD5L, SGD6, SGD7, and SGD8 and
the columnar members 40 belonging to the group G0 also are set to
the conducting state. As a result, all of the drain-side select
transistors of the columnar members 40 belonging to the group G0
are set to the conducting state; and the group G0 is selected.
[0068] On the other hand, the off-potential Voff is applied to the
electrode films SGD2L, SGD2R, SGD3R, SGD4R, and SGD5R. At this
time, the drain-side select transistors that are formed at the
crossing portions between the insulating portion 25b and the
columnar members 40 belonging to the groups G1 to G3 are set to the
nonconducting state because a fringe electric field high enough to
set the conducting state is not applied. Also, the drain-side
select transistors that are formed respectively at the crossing
portions between the electrode films SGD2R, SGD3R, and SGD4R and
the columnar members 40 belonging to the groups G1 to G3 are set to
the nonconducting state. Therefore, at least one of the drain-side
select transistors of each of the columnar members 40 belonging to
the groups G1 to G3 is set to the nonconducting state. As a result,
the groups G1 to G3 are not selected.
[0069] As shown in FIG. 6, in the case where the group G1 is
selected, the high on-potential VonH is applied to the electrode
films SGD2R and SGD4L. Thereby, the drain-side select transistors
that are formed at the crossing portions between the columnar
members 40 belonging to the group G1 and the electrode film SGD3C
interposed between the electrode film SGD2R and the electrode film
SGD4L in the Z-direction are set to the conducting state by the
fringe electric field of the electrode films SGD2R and SGD4L. The
drain-side select transistors that are formed at the crossing
portions between the electrode film SGD2R and these columnar
members 40 and the drain-side select transistors that are formed at
the crossing portions between the electrode film SGD4L and these
columnar members 40 also are set to the conducting state.
[0070] The on-potential Von is applied to the electrode films SGD1,
SGD5L, SGD6, SGD7, and SGD8. Thereby, the drain-side select
transistors that are formed respectively at the crossing portions
between the electrode films SGD1, SGD5L, SGD6, SGD7, and SGD8 and
the columnar members 40 belonging to the group G1 also are set to
the conducting state. As a result, all of the drain-side select
transistors of the columnar members 40 belonging to the group G1
are set to the conducting state; and the group G1 is selected.
[0071] On the other hand, the off-potential Voff is applied to the
electrode films SGD2L, SGD3L, SGD3R, SGD4R, and SGD5R. At this
time, the drain-side select transistors that are formed at the
crossing portions between the insulating portion 25b and the
columnar members 40 belonging to the groups G0, G2, and G3 are set
to the nonconducting state because a fringe electric field high
enough to set the conducting state is not applied. The drain-side
select transistors that are formed respectively at the crossing
portions between the electrode films SGD3L, SGD3R, and SGD4R and
the columnar members 40 belonging to the groups G0, G2, and G3 also
are set to the nonconducting state. Therefore, at least one of the
drain-side select transistors of each of the columnar members 40
belonging to the groups G0, G2, and G3 is set to the nonconducting
state. As a result, the groups G0, G2, and G3 are not selected.
[0072] As shown in FIG. 7, in the case where the group G2 is
selected, the high on-potential VonH is applied to the electrode
films SGD3R and SGD5L. Thereby, the drain-side select transistors
that are formed at the crossing portions between the columnar
members 40 belonging to the group G2 and the electrode film SGD4C
interposed between the electrode film SGD3R and the electrode film
SGD5L in the Z-direction are set to the conducting state by the
fringe electric field of the electrode films SGD3R and SGD5L. The
drain-side select transistors that are formed at the crossing
portions between the electrode film SGD3R and these columnar
members 40 and the drain-side select transistors that are formed at
the crossing portions between the electrode film SGD5L and these
columnar members 40 also are set to the conducting state.
[0073] The on-potential Von is applied to the electrode films SGD1,
SGD2R, SGD6, SGD7, and SGD8. Thereby, the drain-side select
transistors that are formed respectively at the crossing portions
between the electrode films SGD1, SGD2R, SGD6, SGD7, and SGD8 and
the columnar members 40 belonging to the group G2 also are set to
the conducting state. As a result, all of the drain-side select
transistors of the columnar members 40 belonging to the group G2
are set to the conducting state; and the group G2 is selected.
[0074] On the other hand, the off-potential Voff is applied to the
electrode films SGD2L, SGD3L, SGD4L, SGD4R, and SGD5R. At this
time, the drain-side select transistors that are formed at the
crossing portions between the insulating portion 25b and the
columnar members 40 belonging to the groups G0, G1, and G3 are set
to the nonconducting state because a fringe electric field high
enough to set the conducting state is not applied. The drain-side
select transistors that are formed respectively at the crossing
portions between the electrode films SGD3L, SGD4L, and SGD4R and
the columnar members 40 belonging to the groups G0, G1, and G3 also
are set to the nonconducting state. Therefore, at least one of the
drain-side select transistors of each of the columnar members 40
belonging to the groups G0, G1, and G3 is set to the nonconducting
state.
[0075] As a result, the groups G0, G1, and G3 are not selected.
[0076] As shown in FIG. 8, in the case where the group G3 is
selected, the high on-potential VonH is applied to the electrode
films SGD4R and SGD6. Thereby, the drain-side select transistors
that are formed at the crossing portions between the columnar
members 40 belonging to the group G3 and the electrode film SGDSC
interposed between the electrode film SGD4R and the electrode film
SGD6 in the Z-direction are set to the conducting state by the
fringe electric field of the electrode films SGD4R and SGD6. The
drain-side select transistors that are formed at the crossing
portions between the electrode film SGD4R and these columnar
members 40 and the drain-side select transistors that are formed at
the crossing portions between the electrode film SGD6 and these
columnar members 40 also are set to the conducting state.
[0077] The on-potential Von is applied to the electrode films SGD1,
SGD2R, SGD3R, SGD7, and SGD8. Thereby, the drain-side select
transistors that are formed respectively at the crossing portions
between the electrode films SGD1, SGD2R, SGD3R, SGD7, and SGD8 and
the columnar members 40 belonging to the group G3 also are set to
the conducting state. As a result, all of the drain-side select
transistors of the columnar members 40 belonging to the group G3
are set to the conducting state; and the group G3 is selected.
[0078] On the other hand, the off-potential Voff is applied to the
electrode films SGD2L, SGD3L, SGD4L, SGD5L, and SGD5R. At this
time, the drain-side select transistors that are formed at the
crossing portions between the insulating portion 25b and the
columnar members 40 belonging to the groups G0 to G2 are set to the
nonconducting state because a fringe electric field high enough to
set the conducting state is not applied. The drain-side select
transistors that are formed respectively at the crossing portions
between the electrode films SGD3L, SGD4L, and SGD5L and the
columnar members 40 belonging to the groups G0 to G2 also are set
to the nonconducting state. Therefore, at least one of the
drain-side select transistors of each of the columnar members 40
belonging to the groups G0 to G2 is set to the nonconducting state.
As a result, the groups G0 to G2 are not selected.
[0079] Thus, by the drive circuit 15 applying the high on-potential
VonH to the two electrode films SGD disposed on the two Z-direction
sides of one insulating portion 25b pierced by the columnar members
40 belonging to the group to be selected, the drain-side select
transistors that are formed at the crossing portions between the
insulating portion 25b and the columnar members 40 are set to the
conducting state. By applying the on-potential Von to the other
electrode films 25 pierced by the columnar members 40 belonging to
the group to be selected, the drain-side select transistors that
are formed at these crossing portions also are set to the
conducting state. On the other hand, the drain-side select
transistors that are formed at the crossing portions between the
insulating portion 25b and the columnar members 40 belonging to the
other groups are not applied with a high fringe electric field and
are set to the nonconducting state. Thereby, one group is
selected.
[0080] A method for manufacturing the semiconductor memory device
according to the embodiment will now be described.
[0081] FIG. 9A to FIG. 17 are cross-sectional views showing the
method for manufacturing the semiconductor memory device according
to the embodiment.
[0082] In FIG. 9A to FIG. 17, only portions corresponding to the
drain-side select gates are shown; and the other portions are not
illustrated.
[0083] First, as shown in FIG. 1, STI (Shallow Trench Isolation),
diffusion layers, etc., are formed in the upper layer portion of
the silicon substrate 10. Then, gate electrodes, etc., are formed
on the silicon substrate 10. Thereby, MOSFETs 12 are formed. Then,
the inter-layer insulating film 11, the interconnect 13, contacts,
vias, etc., are formed on the silicon substrate 10. Thereby, the
drive circuit 15 is formed. Then, the source electrode film 20, the
insulating film 21, and the electrode film 22 are formed on the
inter-layer insulating film 11.
[0084] Continuing, for example, the insulating films 24 that are
made of silicon oxide (SiO) and sacrificial films 61 that are made
of silicon nitride (SiN) are stacked alternately by CVD (Chemical
Vapor Deposition); and the electrode films 25 up to the electrode
film 25 directly under the electrode film SGD8 used to form the
drain-side select gate (SGD) of the lowermost layer, i.e., up to
the electrode film 25 of the ninth level from the top of the
stacked body 30 are formed. However, in the stacked body 30 at this
stage, instead of the electrode films 25, for example, silicon
nitride films are formed as the sacrificial films 61 to be replaced
with the electrode films 25 in a subsequent process. Further, the
sacrificial films 61 up to the sacrificial film 61 to be replaced
with the electrode film SGD5 are formed as shown in FIG. 9A by
repeating the process of alternately forming the insulating film 24
and the sacrificial film 61.
[0085] Continuing as shown in FIG. 9B, two trenches 62a are formed
at the two Y-direction end portions of a region corresponding to
the group G3 by lithography and RIE (Reactive Ion Etching). The
sacrificial film 61 of the uppermost level, i.e., the sacrificial
film 61 to be replaced with the electrode film SGD5, is divided by
the trenches 62a. Thereby, the sacrificial film 61 of the uppermost
level is divided by the two trenches 62a into a portion
corresponding to the electrode film SGD5L, a portion corresponding
to the electrode film SGD5C, and a portion corresponding to the
electrode film SGD5R.
[0086] Continuing as shown in FIG. 10A, a silicon nitride film 63
is formed on the entire surface. Although the silicon nitride film
63 also is formed on the inner surfaces of the trenches 62a, the
thickness of the silicon nitride film 63 is such that the trenches
62a are not completely filled.
[0087] Then, as shown in FIG. 10B, thermal oxidation treatment of
the silicon nitride film 63 is performed. Thereby, the silicon
nitride film 63 is changed into a silicon thermal oxide film
64.
[0088] Continuing as shown in FIG. 11A, for example, the insulating
film 24 is formed by depositing silicon oxide by CVD. The
insulating film 24 also is filled into the trenches 62a. The
insulating film 24 is formed as one body with the silicon thermal
oxide film 64 (referring to FIG. 10B). In the subsequent drawings,
the silicon thermal oxide film 64 is shown as a portion of the
insulating film 24.
[0089] Continuing as shown in FIG. 11B, one sacrificial film 61 is
formed by depositing silicon nitride. This sacrificial film 61 is
replaced with the electrode films SGD4L and SGD4R in a subsequent
process. Then, two trenches 62b are formed at the two Y-direction
end portions of a region corresponding to the group G2 by
lithography and RIE. The sacrificial film 61 of the uppermost level
is divided by the trenches 62b. Thereby, the sacrificial film 61 of
the uppermost level is divided into a portion corresponding to the
electrode film SGD4L, a portion corresponding to the electrode film
SGD4C, and a portion corresponding to the electrode film SGD4R.
[0090] Thereafter, similar processes are repeated. Namely,
similarly to the processes shown in FIGS. 10A and 10B, a silicon
nitride film is formed on the entire surface; and the silicon
nitride film is changed into a silicon thermal oxide film by
performing thermal oxidation treatment. Then, similarly to the
process shown in FIG. 11A, the insulating film 24 is formed by
depositing silicon oxide.
[0091] Then, similarly to the process shown in FIG. 11B, one
sacrificial film 61 is formed; and trenches 62c are formed at the
two Y-direction end portions of a region corresponding to the group
G1 by lithography and RIE. Thereby, the one sacrificial film 61 is
divided by the two trenches 62c into a portion corresponding to the
electrode film SGD3L, a portion corresponding to the electrode film
SGD3C, and a portion corresponding to the electrode film SGD3R.
[0092] Further, by repeating similar processes, the insulating film
24 that fills the interiors of the trenches 62c and the sacrificial
film 61 are sequentially formed; two trenches 62d are formed in the
newly formed one sacrificial film 61; and the one sacrificial film
61 is divided into a portion corresponding to the electrode film
SGD2L, a portion corresponding to the electrode film SGD2C, and a
portion corresponding to the electrode film SGD2R. Then, the
insulating film 24 is formed by forming the silicon nitride film
63, performing thermal oxidation treatment, and depositing silicon
oxide. Then, the sacrificial film 61 that corresponds to the
electrode film SGD1 is formed; and an insulating film 65 that is
made of, for example, silicon oxide is formed on the sacrificial
film 61. Thereby, the stacked body 30 is formed as shown in FIG.
12. In the subsequent drawings, the stacked body 30 that is shown
includes the insulating film 65 that has a different thickness than
the insulating film 24 and is formed on the sacrificial film 61 to
be replaced with the electrode film 25 of the uppermost layer in a
subsequent process.
[0093] Continuing as shown in FIG. 13, an anti-reflection film 66,
a hard mask film 67, and a resist film 68 are formed on the
insulating film 65. Then, circular openings 68a are formed to the
resist film 68 by performing exposure and development. When viewed
from the Z-direction, for example, the openings 68a are arranged in
a staggered configuration.
[0094] Then, as shown in FIG. 14, the hard mask film 67 (referring
to FIG. 13) is patterned using the resist film 68 (referring to
FIG. 13) as a mask; and the anti-reflection film 66, the stacked
body 30, the electrode film 22 (referring to FIG. 1), and the
insulating film 21 (referring to FIG. 1) are etched using the hard
mask film 67 as a mask. Thereby, memory holes 70 are formed in the
stacked body 30, the electrode film 22, and the insulating film 21.
The source electrode film 20 (referring to FIG. 1) is exposed at
the bottom surfaces of the memory holes 70. Here, the electrode
film 22 that is made of polysilicon can function as an etching
stopper for suppressing the fluctuation of the bottom surface
positions of the memory holes 70 by once stopping the etching at
the point in time when the memory holes 70 pierce the stacked body
30 and by subsequently continuing the etching using conditions that
can etch polysilicon. Then, the resist film 68, the hard mask film
67, and the anti-reflection film 66 are removed.
[0095] Continuing as shown in FIG. 4 and FIG. 15, the silicon oxide
layer 46, the charge storage film 44, and the tunneling insulating
film 43 are formed on the inner surfaces of the memory holes 70.
Then, for example, the tunneling insulating film 43, the charge
storage film 44, and the silicon oxide layer 46 that are on the
bottom surfaces of the memory holes 70 are removed by RIE. Then,
the silicon pillars 42 are formed by depositing silicon on the
inner surfaces of the memory holes 70. The lower ends of the
silicon pillars 42 are connected to the source electrode film 20.
Then, the core members 41 are formed by filling silicon oxide into
the memory holes 70. Thus, the columnar members 40 are formed
inside the memory holes 70.
[0096] Continuing as shown in FIG. 1 and FIG. 16, a slit 71 that
spreads along the XZ plane is formed in the stacked body 30, the
electrode film 22, and the insulating film 21. Then, the
sacrificial films 61 that are made of silicon nitride are removed
by performing, for example, wet etching using hot phosphoric acid
via the slit 71. Thereby, spaces 72 are formed where the
sacrificial films 61 are removed. At this time, the insulating film
24 that is filled into the trenches 62a to 62d (referring to FIG.
12) includes the silicon thermal oxide film 64 (referring to FIG.
10B); therefore, the etching resistance is high; and the insulating
film 24 is not consumed. Therefore, the portions of the sacrificial
films 61 interposed between the trenches 62a to 62d (referring to
FIG. 12) remain without being etched. Thus, the insulating portions
25b are formed. In the insulating portion 25b, the insulating film
24 that is filled into the trenches 62a to 62d becomes the end
portions 25e; and the sacrificial film 61 that is interposed
between the trenches 62a to 62d (referring to FIG. 12) becomes the
central portion 25f.
[0097] Continuing as shown in FIG. 1 and FIG. 17, aluminum oxide is
deposited via the slit 71. Thereby, the aluminum oxide layer 47
(referring to FIG. 4) is formed on the inner surfaces of the spaces
72. The aluminum oxide layer 47 contacts the silicon oxide layer 46
which is the outermost layer of the columnar member 40 and is
included in the blocking insulating film 45 with the silicon oxide
layer 46. Then, for example, a metal material such as tungsten or
the like is deposited via the slit 71. Thereby, the electrode films
25 are formed inside the spaces 72. The conductive portions 25a and
25c are formed from the deposited metal material inside the spaces
72 having the insulating portion 25b provided in the interior.
Thus, the sacrificial films 61 (referring to FIG. 15) are replaced
with the electrode films 25.
[0098] Continuing as shown in FIG. 1, the metal material and the
aluminum oxide that are inside the slit 71 are removed; and, for
example, an insulating material such as silicon oxide or the like
is filled. Thereby, the insulating plate 31 is formed inside the
slit 71. In the process shown in FIG. 16, the slit 71 may be formed
to overlap one of the trenches 62a (referring to FIG. 9B) and one
of the trenches 62d (referring to FIG. 12). In such a case, the
insulating plate 31 contacts the end portion 25e of the electrode
film SGD2C (25b) (referring to FIG. 3) and the end portion 25e of
the electrode film SGD5C (25b) (referring to FIG. 3); and the
electrode film SGD2L and the electrode film SGD5R are not formed.
Then, the insulating film 50, the plugs 51, and the bit lines 52
are formed on the stacked body 30 and on the insulating plate 31.
Thereby, the semiconductor memory device 1 according to the
embodiment is manufactured.
[0099] Effects of the embodiment will now be described.
[0100] In the embodiment, the insulating portion 25b is provided in
the electrode films 25 functioning as the drain-side select gates
(SGD). Thereby, the conductive portion 25a and the conductive
portion 25c can be used as independent electrodes because the
conductive portion 25a and the conductive portion 25c are insulated
from each other. As a result, the silicon pillars 42 that are
connected to one bit line 52 can be driven separately in multiple
groups. In the embodiment, by providing the insulating portion 25b
in four electrode films 25, the silicon pillars 42 can be driven
separately in the four groups G0 to G3.
[0101] In the embodiment, the columnar members 40 that include the
silicon pillars 42 are disposed to pierce the insulating portion
25b. Thereby, the spacing of the columnar members 40 in the
Y-direction can be reduced compared to the case where the
insulating member for subdividing the drain-side select gates is
provided at a position distal to the columnar members 40; and
higher integration of the semiconductor memory device 1 can be
realized.
[0102] In the embodiment, by applying the high on-potential VonH
which is higher than the normal on-potential Von to the two
electrode films 25 having the insulating portion 25b interposed
between the two electrode films 25 in the Z-direction, the
drain-side select transistors that are formed at the crossing
portions between the insulating portion 25b and the columnar
members 40 are set to the conducting state by the fringe electric
field. Thereby, the columnar members 40 can operate as drain-side
select transistors even in the case where the columnar members 40
pierce the insulating portion 25b.
[0103] In the embodiment, the central portion 25f of the insulating
portion 25b is formed of silicon nitride. Because the relative
dielectric constant of silicon nitride is higher than the relative
dielectric constant of silicon oxide, the fringe electric field can
be transmitted efficiently to the silicon pillars 42 disposed
inside the central portion 25f. Also, the formation is easy because
the central portion 25f can be formed by causing the sacrificial
film 61 to remain.
[0104] The lower ends of the silicon pillars 42 may be connected to
the silicon substrate 10 without providing the inter-layer
insulating film 11 and the source electrode film 20. In such a
case, the silicon substrate 10 functions as the source electrode.
In such a case, the drive circuit 15 is formed at the periphery of
the stacked body 30. Also, a conductive member may be provided
inside the insulating plate 31; and the lower end of the conductive
member may be connected to the silicon substrate 10.
[0105] According to the embodiments described above, a
semiconductor memory device and a method for driving the
semiconductor memory device can be realized in which the
integration is high.
[0106] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
embodiments described herein may be embodied in a variety of other
forms; furthermore, various omissions, substitutions and changes in
the form of the embodiments described herein may be made without
departing from the spirit of the inventions. The accompanying
claims and their equivalents are intended to cover such forms or
modification as would fall within the scope and spirit of the
inventions.
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