U.S. patent application number 16/297714 was filed with the patent office on 2019-07-04 for display apparatus.
This patent application is currently assigned to Innolux Corporation. The applicant listed for this patent is Innolux Corporation. Invention is credited to Tsau-Hua Hsieh, Shun-Yuan Hu, Kuan-Feng Lee.
Application Number | 20190206848 16/297714 |
Document ID | / |
Family ID | 60329072 |
Filed Date | 2019-07-04 |
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United States Patent
Application |
20190206848 |
Kind Code |
A1 |
Lee; Kuan-Feng ; et
al. |
July 4, 2019 |
DISPLAY APPARATUS
Abstract
A display apparatus includes a first substrate, a light emitting
device and a first insulating layer. The light emitting device and
the first insulating layer are disposed on the first substrate. The
first insulating layer has an opening, and the light emitting
device is disposed in the opening. A portion of a light emitted by
the light emitting device passes through the first substrate. An
angle between a side wall of the opening and the first substrate is
greater than or equal to 60.degree., and less than or equal to
150.degree..
Inventors: |
Lee; Kuan-Feng; (Miao-Li
County, TW) ; Hu; Shun-Yuan; (Miao-Li County, TW)
; Hsieh; Tsau-Hua; (Miao-Li County, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Innolux Corporation |
Miao-Li County |
|
TW |
|
|
Assignee: |
Innolux Corporation
Miao-Li County
TW
|
Family ID: |
60329072 |
Appl. No.: |
16/297714 |
Filed: |
March 11, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15585175 |
May 3, 2017 |
10269777 |
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16297714 |
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62339107 |
May 20, 2016 |
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62350169 |
Jun 14, 2016 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 25/0753
20130101 |
International
Class: |
H01L 25/075 20060101
H01L025/075 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 5, 2017 |
CN |
201710007030.9 |
Claims
1. A display apparatus, comprising: a first substrate; a light
emitting device, disposed on the first substrate; and a first
insulating layer, located on the first substrate, wherein the first
insulating layer has an opening, and the light emitting device is
disposed at the opening, wherein a portion of a light emitted by
the light emitting device passes through the first substrate, and
wherein an angle between a side wall of the opening and the first
substrate is greater than or equal to 60.degree. and less than or
equal to 150.degree..
2. The display apparatus as claimed in claim 1, further comprising
a color filter layer, wherein the color filter is disposed in an
emission path of the light.
3. The display apparatus as claimed in claim 2, wherein the color
filter layer is disposed on a side of the first substrate away from
the light emitting device.
4. The display apparatus as claimed in claim 2, wherein a width of
the color filter layer is greater than a width of the opening of
the first insulating layer.
5. The display apparatus as claimed in claim 1, further comprising
a light shielding layer, wherein the light shielding layer is
disposed on a side of the first substrate away from the light
emitting device.
6. The display apparatus as claimed in claim 5, wherein the light
shielding layer does not overlapped with the light emitting device
in a normal direction of the first substrate.
7. The display apparatus as claimed in claim 1, further comprising
a wavelength conversion layer, wherein the wavelength conversion
layer is disposed in an emission path of the light.
8. The display apparatus as claimed in claim 7, wherein the
wavelength conversion layer is at least partially overlapped with
the light emitting device and the first insulating layer in a
normal direction of the first substrate.
9. The display apparatus as claimed in claim 7, wherein the
wavelength conversion layer is disposed on a side of the first
substrate away from the light emitting device.
10. The display apparatus as claimed in claim 7, wherein the first
substrate has a recess on a side of the first substrate away from
the light emitting device, and wherein the wavelength conversion
layer is conformally formed at the side of the first substrate.
11. The display apparatus as claimed in claim 1, further comprising
a second insulating layer, wherein the second insulating layer is
disposed on the first insulating layer.
12. The display apparatus as claimed in claim 11, wherein the
opening of the first insulating layer is filled by the second
insulating layer, and wherein the light emitting device is at least
partially embedded in the second insulating layer.
13. The display apparatus as claimed in claim 11, wherein the
second insulating layer is a planarization layer.
14. The display apparatus as claimed in claim 1, further comprising
a reflection structure, wherein the reflection structure is
disposed on the first insulating layer, and is at least partially
overlapped with the light emitting device in a normal direction of
the first substrate.
15. The display apparatus as claimed in claim 1, further comprising
a third insulating layer, wherein the third insulating layer is
disposed on the first insulating layer.
16. The display apparatus as claimed in claim 15, wherein the third
insulating layer comprises a light shielding material.
17. The display apparatus as claimed in claim 15, further
comprising a metal layer, and the third insulating layer is in
contact with the metal layer.
18. The display apparatus as claimed in claim 1, wherein the first
insulating layer is a multilayer structure.
19. The display apparatus as claimed in claim 18, wherein at least
one layer in the multilayer structure comprises a light shielding
material.
20. The display apparatus as claimed in claim 1, further comprising
a second substrate, wherein the first insulating layer and the
light emitting device are located between the first substrate and
the second substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation application of and claims
the priority benefit of U.S. application Ser. No. 15/585,175, filed
on May 3, 2017, now allowed, which claims the priority benefits of
U.S. provisional application Ser. No. 62/339,107, filed on May 20,
2016, U.S. provisional application Ser. No. 62/350,169, filed on
Jun. 14, 2016, and China application serial no. 201710007030.9,
filed on Jan. 5, 2017. The entirety of each of the above-mentioned
patent applications is hereby incorporated by reference herein and
made a part of this specification.
BACKGROUND OF THE DISCLOSURE
Technical Field
[0002] The disclosure relates to a display apparatus, and more
particularly, to a display apparatus having a reflection
structure.
Description of Related Art
[0003] A light emitting diode (LED) display apparatus has
advantages such as active light emission, high brightness, high
contrast, low power consumption, and has advantages such as longer
lifespan as compared to an organic light emitting diode (OLED)
display apparatus. Therefore, in recent years, LED display
apparatus has become one of the most extensively developed
technologies for new type displays. To meet the need of high
resolution, LED display apparatus is being developed toward a
direction to be composed of an active device array substrate and
micron-sized LEDs arranged in an array.
SUMMARY
[0004] The disclosure provides a display apparatus, which can be
applied to a large area display apparatus or a double-sided display
apparatus.
[0005] The display apparatus of the disclosure includes a first
substrate, a light emitting device, and a first reflection
structure. The light emitting device is disposed on the first
substrate, wherein a height of the light emitting device is equal
to or greater than 1 .mu.m, and less than or equal to 20 .mu.m. The
first reflection structure is disposed corresponding to the light
emitting device, wherein a light emitted by the light emitting
device is reflected by the first reflection structure, and then
emitted from the first substrate.
[0006] Based on the above, in the display apparatus of the
disclosure, a light emission direction of the light emitting device
can be controlled by the reflection structure, such that the light
emitted by the light emitting device is reflected by the first
reflection structure, and then emitted from the first
substrate.
[0007] To make the aforementioned features and advantages of the
disclosure more comprehensible, several embodiments accompanied
with figures are described in detail below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 to FIG. 28 are schematic partial cross-sectional
views of display apparatuses according to a plurality of
embodiments of the disclosure.
DESCRIPTION OF THE EMBODIMENTS
[0009] The directional terms mentioned in the following
embodiments, for example, "on," "under," "left," "right," "front,"
"back," and so on, merely refer to directions in the accompanying
drawings. Therefore, the directional terms are used to illustrate
rather than limit the disclosure. For example, in the descriptions
below, an expression of "a first object is on a second object"
covers embodiments in which the first object directly contacts the
second object, and embodiments in which the first object does not
directly contact the second object. Besides, in the embodiments in
which the first object does not directly contact the second object,
there may be other objects or simply a space between the first
object and the second object.
[0010] FIG. 1 is a schematic partial cross-sectional view of a
display apparatus according to an embodiment of the disclosure.
Referring to FIG. 1, a display apparatus 50A in the present
embodiment includes a first substrate 102, a light emitting device
118, and a first reflection structure 122. The light emitting
device 118 is disposed on the first substrate 102, wherein a height
h1 of the light emitting device 118 is equal to or greater than 1
.mu.m and less than or equal to 20 .mu.m. If the height h1 of the
light emitting device 118 is less than 1 .mu.m, structural strength
of the light emitting device 118 may be weakened and more defects
may be generated. If the height h1 of the light emitting device 118
is greater than 20 .mu.m, illumination efficiency or heat
dissipation efficiency of the light emitting device 118 may be
reduced. In another embodiment, the height h1 of the light emitting
device 118 may be equal to or greater than 2 .mu.m and less than or
equal to 12 .mu.m, or may be equal to or greater than 5 .mu.m and
less than or equal to 10 .mu.m. The first reflection structure 122
is disposed corresponding to the light emitting device 118. In the
present embodiment, the light emitting device 118 may be disposed
between the first substrate 102 and a second substrate 120, and the
first reflection structure 122 is disposed on one side of the
second substrate 120 facing the light emitting device 118.
[0011] In the display apparatus 50A of the present embodiment, a
light emitted by the light emitting device 118 can be reflected by
the first reflection structure 122, and then emitted outward from
the first substrate 102 (as shown by the arrows in FIG. 1).
Furthermore, a final display surface is located on one side of the
first substrate 102 in the display apparatus 50A. Therefore, the
design of the present embodiment easily changes a light emission
direction of the light emitting device 118, such that a display
direction of the display apparatus 50A more easily meets different
design requirements.
[0012] The display apparatus 50A further includes a driving device
T. The driving device T may be disposed on the first substrate 102,
and the light emitting device 118 is staggered with the driving
device T. In this way, there is no need to bond the light emitting
device 118 onto the driving device T. Therefore, before bonding the
light emitting device 118 to the first substrate 102, it may not be
necessary to dispose a planarization layer between the light
emitting device 118 and the first substrate 102. Accordingly, when
the light emitting device 118 is bonded to the first substrate 102,
a problem of softening of the planarization layer between the light
emitting device 118 and the first substrate 102 due to heating can
be prevented, thus alignment precision of the bonding can be
improved.
[0013] A special patterning process may be performed on the first
reflection structure 122 of the present embodiment, such that the
reflected light is emitted toward a more uniform direction, thus a
high brightness display effect is more likely to be attained. For
example, the first reflection structure 122 is, for instance, a
metal layer or an omnidirectional reflective mirror (ODM). The ODM
is, for instance, a multilayer structure composed by metal layers
and oxide layers. A material of the metal layers may include
aluminum and silver, and a material of the oxide layers may include
silicon oxide. In one embodiment, the display apparatus 50A may
further include a conductive via 121 and an electrode 123. The
electrode 123 may be disposed on the first substrate 102, and the
conductive via 121 may be electrically connected between the first
reflection structure 122 and the electrode 123. The electrode 123
may transmit a common signal, and the common signal may be
transmitted to an electrode 116 of the light emitting device 118
through the conductive via 121 and the first reflection structure
122 in sequence. In one embodiment, materials of the conductive via
121 and the electrode 123 may include metal or other conductive
materials.
[0014] The display apparatus 50A of the present embodiment may
further include a wavelength conversion layer 124 disposed on one
side of the first substrate 102. In the present embodiment, the
wavelength conversion layer 124 is disposed on one side of the
first substrate 102 that is away from the light emitting device
118. In other embodiments, the wavelength conversion layer 124 may
also be disposed on one side of the first substrate 102 that is
adjacent to the light emitting device 118. In one embodiment, an
orthogonal projection of the wavelength conversion layer 124 on the
first substrate 102 partially overlaps with an orthogonal
projection of the light emitting device 118 on the first substrate
102. In other embodiments, the orthogonal projection of the
wavelength conversion layer 124 on the first substrate 102 may
completely overlap with the orthogonal projection of the light
emitting device 118 on the first substrate 102. The orthogonal
projection refers to a set of projection points of mutually
parallel projection lines passing through various points on a
projection object (for example, the wavelength conversion layer 124
herein) on a projection plane (for example, a surface of the first
substrate 102 herein), and the aforementioned mutually parallel
projection lines are perpendicular to the projection plane. In this
way, the light provided by the light emitting device 118 passes
through the wavelength conversion layer 124 before being emitted
outward. The wavelength conversion layer 124 may be applied to
change a wavelength of the light emitted from the light emitting
device 118. For example, the light emitting device 118 may provide
an invisible light, and the wavelength conversion layer 124
converts the invisible light to a light with desired color such as
red light, blue light, green light, or so forth. In addition, the
light emitting device 118 may also provide a visible light, and the
wavelength conversion layer 124 converts the visible light to a
light with desired color such as red light, blue light, green
light, or so forth. In the present embodiment, the wavelength
conversion layer 124 may be a quantum dot layer. In other
embodiments, the wavelength conversion layer 124 may also be a
quantum dot layer, a phosphor powder layer, a fluorescent powder
layer or a combination thereof.
[0015] In other embodiments, the aforementioned wavelength
conversion layer 124 may be replaced with a color filter layer. In
other words, either the wavelength conversion layer or the color
filter layer may be disposed on one side of the first substrate
102.
[0016] The light emitting device 118 of the present embodiment is a
vertical LED for exemplary purposes. However, in other embodiments,
a flip-chip LED or other light emitting devices may also be adopted
as the light emitting device 118. The light emitting device 118 may
be a micron-sized LED. In one embodiment, a length and a width of
the light emitting device 118 are respectively less than or equal
to 300 .mu.m, and equal to or greater than 1 .mu.m. In other
embodiments, the length and the width of the light emitting device
118 may further be respectively less than or equal to 100 .mu.m and
greater than or equal to 2 .mu.m, less than or equal to 20 .mu.m
and greater than or equal to 3 .mu.m, or less than or equal to 10
.mu.m and greater than or equal to 5 .mu.m.
[0017] A first insulating layer 127 may be disposed on the first
substrate 102 of the present embodiment. In the present embodiment,
the first insulating layer 127 may be a multilayer structure, which
includes an insulating layer 126 and an insulating layer 128
sequentially disposed on the first substrate 102. The insulating
layer 126 and the insulating layer 128 have an opening P10, and the
light emitting device 118 is disposed at the opening P10. In other
embodiments, the first insulating layer 127 may also be a
single-layer structure. The first insulating layer 127 has the
opening P10, and the light emitting device 118 is disposed at the
opening P10. At least one of the insulating layer 126 and the
insulating layer 128 may be formed of a light shielding material,
and may be used as (but not limited to) a black matrix (BM).
Therefore, if a plurality of light emitting devices are disposed in
the display apparatus 50A, the light emitted from adjacent light
emitting devices can be blocked, and the adjacent light emitting
devices are prevented from interfering with each other, so as to
improve display quality. Additionally, the insulating layer 126 or
the insulating layer 128 formed of the light shielding material may
further cover the driving device T to prevent the driving device T
from reflecting external light, which may be observed by users and
the display quality may be affected. Furthermore, the insulating
layer 126 may further protect the driving device T. An angle
.theta. between a side wall of the opening P10 of first insulating
layer 127 and the first substrate 102 is, for instance, less than
or equal to 150.degree. and greater than or equal to 60.degree.. In
another embodiment, the angle .theta. between the side wall of the
opening P10 and the first substrate 102 is, for instance, less than
or equal to 135.degree. and greater than or equal to 90.degree..
The first reflection structure 122, for instance, roughly covers
one side of the opening P10 that is close to the second substrate
120. The wavelength conversion layer 124 may be disposed at one
side of the first substrate 102 that is opposite to the light
emitting device 118, and may roughly cover the opening P10. A
second insulating layer 132 may further be disposed on the first
substrate 102. The second insulating layer 132 fills the opening
P10 and covers the light emitting device 118 and the insulating
layer 128. In one embodiment, the second insulating layer 132 may
be a planarization layer. In addition, the first reflection
structure 122, for instance, is formed on the second insulating
layer 132. In the present embodiment, a third insulating layer 133
may further be disposed between the second substrate 120 and the
second insulating layer 132. The third insulating layer 133 may be
located on the same side as the first reflection structure 122,
such that adjacent first reflection structures 122 may be separated
from each other. In one embodiment, the third insulating layer 133
may be formed of a light shielding material, so as to be used as
(but not limited to) a BM, in order to prevent the adjacent light
emitting devices from interfering with each other.
[0018] The driving device T includes, for instance, a gate G, a
gate insulating layer GI, a channel layer CH, a source S, and a
drain D. A material of the channel layer CH, for instance (but not
limited to), includes amorphous silicon or an oxide semiconductor
material. The oxide semiconductor material includes, for instance
(but not limited to), indium-gallium-zinc oxide (IGZO), zinc oxide,
tin oxide (SnO), indium-zinc oxide, gallium-zinc oxide (GZO),
zinc-tin oxide (ZTO), indium-tin oxide, or so forth. That is, in
the present embodiment, the driving device T is, for instance, an
amorphous silicon thin film transistor or an oxide semiconductor
thin film transistor. However, the disclosure is not limited
thereto. In other embodiments, the driving device T may also be a
low temperature polysilicon thin film transistor, a silicon-based
thin film transistor, or a microcrystalline silicon thin film
transistor. Besides, in the present embodiment, the driving device
T is a bottom gate transistor. However, the disclosure is not
limited thereto. In other embodiments, the driving device T may
also be a top gate transistor.
[0019] Additionally, the gate insulating layer GI is disposed
between the gate G and the channel layer CH. The gate insulating
layer GI is conformally formed on the first substrate 102, and
covers the gate G. A material of the gate insulating layer GI
includes, for instance (but not limited to), an inorganic material,
an organic material or a combination thereof. The inorganic
material is, for instance (but not limited to), silicon oxide,
silicon nitride, silicon oxynitride, or a stacked layer of at least
two of the aforementioned materials. The organic material is, for
instance (but not limited to), a polymer material such as a
polyimide-based resin, an epoxy-based resin, or an acrylic resin,
and so on. Moreover, the source S and the drain D are located on
the channel layer CH, and the source S is electrically connected to
a data line DL. In addition, in the present embodiment, a fourth
insulating layer BP may further cover the driving device T to
protect the driving device T. The fourth insulating layer BP is
conformally formed on the first substrate 102, and a material of
the fourth insulating layer BP is, for instance (but not limited
to), an inorganic material, an organic material or a combination
thereof. The inorganic material is, for instance (but not limited
to), silicon oxide, silicon nitride, silicon oxynitride, or a
stacked layer of at least two of the aforementioned materials. The
organic material is, for instance (but not limited to), a polymer
material such as a polyimide-based resin, an epoxy-based resin, or
an acrylic resin, and so on. In the present embodiment, the display
apparatus 50A may further include a circuit storage capacitor Cst,
which includes an upper electrode 106a and a lower electrode 106b.
The upper electrode 106a is, for instance, connected to the drain
D, and the lower electrode 106b is, for instance, a common
electrode.
[0020] The light emitting device 118 of the present embodiment may
include an electrode 108, a P-type semiconductor layer 110, a
multiple quantum well structure 112, an N-type semiconductor layer
114, and an electrode 116. The electrode 108 may be disposed on the
fourth insulating layer BP and may be staggered with the driving
device T. The P-type semiconductor layer 110, the multiple quantum
well structure 112 and the N-type semiconductor layer 114 are
located between the electrode 108 and the electrode 116, and the
multiple quantum well structure 112 is located between the N-type
semiconductor layer 114 and the P-type semiconductor layer 110. In
the present embodiment, a height h of the light emitting device 118
represents a distance from a bottom surface of the electrode 108 to
a top surface of the electrode 116. In addition, the display
apparatus 50A may further include a transparent conductive
structure 104, which is disposed between the fourth insulating
layer BP and the light emitting device 118, and is electrically
connected to the electrode 108 of the light emitting device 118 and
the drain D of the driving device T. In one embodiment, the
transparent conductive structure 104 may be a multilayer structure.
Furthermore, the electrode 116 may be electrically connected to the
first reflection structure 122, such that the common signal is
transmitted to the electrode 116 through the electrode 123, the
conductive via 121 and the first reflection structure 122 in
sequence. In one embodiment, the electrode 123 may be located on
the fourth insulating layer BP. In other embodiments, the electrode
123 may be located on the same layer as at least one of the gate G,
the source S, and the drain D of the driving device T, and the
upper electrode 106a or the lower electrode 106b, which means they
may be composed of the same material layer formed by the same
patterning process.
[0021] Referring to FIG. 1 and FIG. 2 together, a display apparatus
50B shown in FIG. 2 is similar to the display apparatus 50A in FIG.
1. The first substrate 102 in FIG. 2 has a recess R, and the
wavelength conversion layer 124 is disposed in the recess R to form
an embedded wavelength conversion layer. In the present embodiment,
the wavelength conversion layer 124 may be formed to be aligned
with a bottom surface of the first substrate 102 (as shown in FIG.
2). In other embodiments, the wavelength conversion layer 124 may
not be aligned with the bottom surface of the first substrate 102.
That is, the wavelength conversion layer 124 may be formed
protruding from or recessed in the bottom surface of the first
substrate 102.
[0022] Referring to FIG. 1 and FIG. 3 together, a display apparatus
50C shown in FIG. 3 is similar to the display apparatus 50A in FIG.
1. The display apparatus 50C in FIG. 3 further includes a color
filter layer 125. The wavelength conversion layer 124 is disposed
between the first substrate 102 and the color filter layer 125. In
addition, an orthogonal projection of the color filter layer 125 on
the first substrate 102 at least partially overlaps with the
orthogonal projection of the light emitting device 118 on the first
substrate 102. In the present embodiment, the wavelength conversion
layer 124 is, for instance (but not limited to), a phosphor powder
layer.
[0023] Referring to FIG. 2 and FIG. 4 together, a display apparatus
50D in FIG. 4 is similar to the display apparatus 50B in FIG. 2.
The display apparatus 50D in FIG. 4 further includes the color
filter layer 125. The wavelength conversion layer 124 is disposed
between the first substrate 102 and the color filter layer 125. In
addition, the orthogonal projection of the color filter layer 125
on the first substrate 102 at least partially overlaps with the
orthogonal projection of the light emitting device 118 on the first
substrate 102. In the present embodiment, the wavelength conversion
layer 124 is, for instance (but not limited to), a phosphor powder
layer.
[0024] FIG. 5 to FIG. 8 are schematic partial cross-sectional views
of display apparatuses according to several embodiments of the
disclosure.
[0025] Referring to FIG. 1 and FIG. 5 together, a display apparatus
50E in FIG. 5 is similar to the display apparatus 50A in FIG. 1. A
light emitting device 144 in FIG. 5 is a flip-chip LED. In the
present embodiment, the light emitting device 144 includes an
electrode 134, a P-type semiconductor layer 136, a multiple quantum
well structure 138, an N-type semiconductor layer 140 and an
electrode 142. The electrode 134 and the electrode 142 may be
disposed on the fourth insulating layer BP, and may be staggered
with the driving device T. The N-type semiconductor layer 140 is
disposed on the electrode 132 and the electrode 142. The P-type
semiconductor layer 136 is disposed between the N-type
semiconductor layer 140 and the electrode 134. In addition, the
transparent conductive structure 104 is electrically connected to
the electrode 134 and the drain D. The display apparatus 50E
further includes a transparent conductive structure 105, which is
electrically connected to the electrode 142. In the present
embodiment, a height h2 represents a distance from a bottom surface
of the electrode 134 or the electrode 142 to a top surface of the
N-type semiconductor layer 140. A light emitted by the light
emitting device 144 can be reflected by the first reflection
structure 122 and then emitted outward from the first substrate 102
(as shown by the arrows in FIG. 5).
[0026] Referring to FIG. 5 and FIG. 6 together, a display apparatus
50F shown in FIG. 6 is similar to the display apparatus 50E in FIG.
5. The first substrate 102 in FIG. 6 has the recess R, and the
wavelength conversion layer 124 is disposed in the recess R to form
an embedded wavelength conversion layer. In the present embodiment,
the wavelength conversion layer 124 is formed to be aligned with
the bottom surface of the first substrate 102 (as shown in FIG. 6).
In other embodiments, the wavelength conversion layer 124 may not
be aligned with the bottom surface of the first substrate 102. That
is, the wavelength conversion layer 124 may be formed protruding
from or recessed in the bottom surface of the first substrate
102.
[0027] Referring to FIG. 5 and FIG. 7 together, a display apparatus
50G shown in FIG. 7 is similar to the display apparatus 50E in FIG.
5. The display apparatus 50G in FIG. 7 further includes the color
filter layer 125. The wavelength conversion layer 124 is disposed
between the first substrate 102 and the color filter layer 125. In
addition, the orthogonal projection of the color filter layer 125
on the first substrate 102 at least partially overlaps with the
orthogonal projection of the light emitting device 144 on the first
substrate 102. In the present embodiment, the wavelength conversion
layer 124 may be a phosphor powder layer, but the disclosure is not
limited thereto.
[0028] Referring to FIG. 8 and FIG. 6 together, a display apparatus
50H shown in FIG. 8 is similar to the display apparatus 50F in FIG.
6. The display apparatus 50H in FIG. 8 further includes the color
filter layer 125. The wavelength conversion layer 124 is disposed
between the first substrate 102 and the color filter layer 125.
Besides, the orthogonal projection of the color filter layer 125 on
the first substrate 102 at least partially overlaps with the
orthogonal projection of the light emitting device 144 on the first
substrate 102. In the present embodiment, the wavelength conversion
layer 124 may be a phosphor powder layer, but the closure is not
limited thereto.
[0029] FIG. 9 is a schematic partial cross-sectional view of a
display apparatus according to an embodiment of the disclosure.
Referring to FIG. 1, FIG. 5, and FIG. 9 together, a display
apparatus 50I in FIG. 9 has a plurality of sub-pixel areas
including a sub-pixel area 501a, a sub-pixel area 501b, and a
sub-pixel area 501c. The sub-pixel area 501a is similar to the
display apparatus 50A shown in FIG. 1. The sub-pixel area 501b and
the sub-pixel area 501c are similar to the display apparatus 50E
shown in FIG. 5. Since a plurality of light emitting devices of the
display apparatus 50I in FIG. 9 may respectively emit light in
different wavelength ranges, the display apparatus 50I in FIG. 9
may not include a wavelength conversion layer. In terms of
structure, the plurality of light emitting devices may be vertical
LEDs, flip-chip LEDs or a combination thereof. However, the
disclosure is not limited to the types of a plurality of light
emitting devices, and may be altered by persons having ordinary
skill in the art according to their needs.
[0030] FIG. 10 to FIG. 17 are schematic partial cross-sectional
views of display apparatuses according to several embodiments of
the disclosure.
[0031] Referring to FIG. 1 and FIG. 10, a display apparatus 50J in
FIG. 10 is similar to the display apparatus 50A in FIG. 1. The
display apparatus 50J in FIG. 10 may include a plurality of light
emitting devices, and a part of the light emitting devices emit
light toward a first substrate 202, and the other part of the light
emitting devices emit light toward a second substrate 220, so as to
form a double-sided light emitting display apparatus. In one
embodiment, the display apparatus 50J may further include the first
insulating layer 127 and the second insulating layer 132 as shown
in FIG. 1, which are omitted from illustration in FIG. 10.
[0032] The display apparatus 50J in FIG. 10 includes the first
substrate 202, a light emitting device 210a, a light emitting
device 210b, a first reflection structure 216, and the second
substrate 220. The first substrate 202 has a driving device T1 and
a driving device T2, and the light emitting device 210a and the
light emitting device 210b are disposed between the first substrate
202 and the second substrate 220.
[0033] The first substrate 202 may be a transparent material layer,
such as glass. The driving device T1 may be a transistor, which
includes a gate G1, a gate insulating layer GI1, a channel layer
CH1, a source S1, and a drain D1. Likewise, the driving device T2
is a transistor, which includes a gate G2, a gate insulating layer
GI2, a channel layer CH2, a source S2, and a drain D2. The gate G1
and the gate G2 may be disposed on the first substrate 202. The
gate insulating layer GI1 and the gate insulating layer GI2 may be
located on the first substrate 202, and may be located between the
gate G1 and the channel layer CH1 and between the gate G2 and the
channel layer CH2.
[0034] The light emitting device 210a and the light emitting device
210b are separately disposed on the first substrate 202, and are
respectively staggered with the driving device T1 and the driving
device T2. In terms of structure, the light emitting device 210a
and the light emitting device 210b of the present embodiment may be
vertical-LEDs.
[0035] The light emitting device 210a includes an electrode 204a, a
light emitting structure 206a and an electrode 208a. The electrode
204a may be electrically connected to the driving device T1. The
light emitting structure 206a is located between the electrode 204a
and the electrode 208a, and may include the P-type semiconductor
layer, the multiple quantum well structure and the N-type
semiconductor layer as shown in FIG. 1, which are omitted from
illustration herein. The display apparatus 50J may further include
a transparent conductive structure 212a, which is disposed between
the electrode 204a and the driving device T1, and extending to
electrically connect the electrode 204a and the drain D1. Besides,
the display apparatus 50J may also include a transparent conductive
structure 214a, which is disposed at the second substrate 220 and
electrically connected to the electrode 208a.
[0036] Likewise, the light emitting device 210b may include an
electrode 204b, a light emitting structure 206b, and an electrode
208b. The electrode 204b may be electrically connected to the
driving device T2, and is staggered with the driving device T2. The
light emitting structure 206b is located between the electrode 204b
and the electrode 208b, and may also include the P-type
semiconductor layer, the multiple quantum well structure and the
N-type semiconductor layer as shown in FIG. 1, which are omitted
from illustration herein. The display apparatus 50J may further
include a transparent conductive structure 212b, which is disposed
between the electrode 204b and the driving device T2 and extending
to electrically connect the electrode 204b and the drain D2. In
addition, the display apparatus 50J may also include a transparent
conductive structure 214b, which is disposed at the second
substrate 220 and electrically connected to electrode 208b.
[0037] The first reflection structure 216 includes a first
reflection structure 216a and a first reflection structure 216b.
The first reflection structure 216a may cover the light emitting
device 210a, while exposing a light emitting surface 218a of the
light emitting device 210a facing the first substrate 202. Another
first reflection structure 216b may cover the light emitting device
210b, while exposing a light emitting surface 218b of the light
emitting device 210b facing the light second substrate 220. In the
present embodiment, the first reflection structure 216a and the
first reflection structure 216b may be metal layers. By disposing
the first reflection structure 216a and the first reflection
structure 216b, the light emitted by the light emitting device 210a
and the light emitting device 210b may be guided to be emitted
toward the first substrate 202 and the second substrate 220.
[0038] The display apparatus 50J may further include a light
shielding layer 222a, which is disposed on one side of the second
substrate 220, for instance, above the second substrate 220.
Moreover, an orthogonal projection of the light shielding layer
222a on the first substrate 202 overlaps with an orthogonal
projection of the light emitting device 210a on the first substrate
202. The light shielding layer 222a is, for instance, a BM or a
reflective material. Accordingly, the light shielding layer 222a
may prevent the light emitted by the light emitting device 210a
from being emitted from the second substrate 220. Likewise, the
display apparatus 50J may further include a light shielding layer
222b, which is disposed on one side of the first substrate 202, for
instance, the side of the first substrate 202 that is away from the
light emitting device 210b. An orthogonal projection of the light
shielding layer 222b on the first substrate 202 overlaps with an
orthogonal projection of the light emitting device 210b on the
first substrate 202. Therefore, by disposing the light shielding
layer 222a and the light shielding layer 222b, the light emitting
device 210a and the light emitting device 210b which are adjacent
to each other may be prevented from interfering each other.
[0039] Referring to FIG. 10 and FIG. 11 together, a major
difference between the display apparatus 50J in FIG. 10 and a
display apparatus 50K in FIG. 11 is that the light emission
directions of the light emitting devices are different.
Nevertheless, both the display apparatus 50J and the display
apparatus 50K are double-sided light emitting display
apparatuses.
[0040] To be more specific, a first reflection structure 216c of
the display apparatus 50K may be disposed at the second substrate
220. An orthogonal projection of the first reflection structure
216c on the first substrate 202 overlaps with the orthogonal
projection of the light emitting device 210b on the first substrate
202. Particularly, the first reflection structure 216c may be
located between the second substrate 220 and the transparent
conductive structure 214b. The display apparatus 50K includes a
second reflection structure 224a and a second reflection structure
224b. The second reflection structure 224a covers the light
emitting device 210a, while exposing the light emitting surface
218a of the light emitting device 210a facing the second substrate
220. The second reflection structure 224b covers the light emitting
device 210b, while exposing the light emitting surface 218b of the
light emitting device 210b facing the second substrate 220. In the
present embodiment, the light emission directions of the light
emitting device 210a and the light emitting device 210b are both
toward the second substrate 220, and the light emitted by the light
emitting device 210b is reflected by the first reflection structure
216c, and then emitted from the first substrate 202. In this way,
the display apparatus 50K may also be a double-sided light emitting
display apparatus.
[0041] Besides, the light shielding layer 222a is disposed on one
side of the first substrate 202, for instance, the side of the
first substrate 202 that is away from the light emitting device
210a. The orthogonal projection of the light shielding layer 222a
on the first substrate 202 overlaps with the orthogonal projection
of the light emitting device 210a on the first substrate 202, so as
to block the light emitted from the emitting device 210a toward the
first substrate 202. The light shielding layer 222b is disposed on
one side of the second substrate 220, for instance, above the
second substrate 220. The orthogonal projection of the light
shielding layer 222b on the first substrate 202 overlaps with the
orthogonal projection of the light emitting device 210b on the
first substrate 202, so as to block the light emitted by light
emitting device 210b toward the second substrate 220. By disposing
the light shielding layer 222a and the light shielding layer 222b,
the light emitting device 210a and the light emitting device 210b
may be prevented from interfering each other.
[0042] Accordingly, a part of the light emitted by the display
apparatus 50K is emitted toward the second substrate 220, and the
other part of the light emitted is emitted toward the first
substrate 202. Therefore, the display apparatus 50K may also
perform double-side light emission.
[0043] Referring to FIG. 10 and FIG. 12 together, a display
apparatus 50L shown in FIG. 12 is similar to the display apparatus
50J in FIG. 10, and both of them are double-sided light emitting
display apparatuses. The first reflection structure 216a in FIG. 12
covers the light emitting device 210a, while exposing the light
emitting surface 218a of the light emitting device 210a facing the
second substrate 220. In addition, the first reflection structure
216b covers the light emitting device 210b, while exposing the
light emitting surface 218b of the light emitting device 210b
facing the first substrate 202. For simplicity, the driving device
T1, the driving device T2, the transparent conductive structure
212a, and the transparent conductive structure 212b as shown in
FIG. 10 are omitted in FIG. 12. Besides, the light emitting device
210a and the light emitting device 210b in FIG. 12 share a
transparent conductive structure 214c. In other words, the
transparent conductive structure 214c is electrically connected to
both of the light emitting device 210a and the light emitting
device 210b.
[0044] The light shielding layer 222a of the display apparatus 50L
is disposed on one side of the first substrate 202, for instance,
the side of the first substrate 202 that is away from the light
emitting device 210a. The orthogonal projection of the light
shielding layer 222a on the first substrate 202 overlaps with the
orthogonal projection of the light emitting device 210a on the
first substrate 202. On the other hand, the light shielding layer
222b of the display apparatus 50L is disposed on one side of the
second substrate 220, for instance, above the second substrate 220.
The orthogonal projection of the light shielding layer 222b on the
first substrate 202 overlaps with the orthogonal projection of the
light emitting device 210b on the first substrate 202.
[0045] Referring to FIG. 11 and FIG. 13 together, a display
apparatus 50M shown in FIG. 13 is similar to the display apparatus
50K in FIG. 11. A major difference between the above two is in the
position of the first reflection structure 216c. In addition, the
display apparatus 50M in FIG. 13 further includes a wavelength
conversion layer 226.
[0046] In the present embodiment, the second substrate 220 may be a
color filter layer. The second substrate 220 may be located between
the first reflection structure 216c and the light emitting device
210b. In addition, if a transmittance of the first reflection
structure 216c is rather low, such as lower than 5%, a light
shielding layer may not be disposed at an exterior side of the
second substrate 220 and the first reflection structure 216c.
[0047] The wavelength conversion layer 226 may be located between
the transparent conductive structure 214c and the second substrate
220. Accordingly, the wavelength range of light emitted by the
light emitting device 210a and the light emitting device 210b can
be altered.
[0048] In addition, the driving device T1, the driving device T2,
the transparent conductive structure 212a, and the transparent
conductive structure 212b as shown in FIG. 11 are omitted in FIG.
13. Besides, the transparent conductive structure 214c in FIG. 13
may be electrically connected to both of the light emitting device
210a and the light emitting device 210b.
[0049] Referring to FIG. 13 and FIG. 14 together, a display
apparatus 50N shown in FIG. 14 is similar to the display apparatus
50M in FIG. 13. A major difference between the above two is that
the second substrate 220 in FIG. 14 may be a transparent substrate,
which has a transparent conductive structure electrically connected
to both of the light emitting device 210a and the light emitting
device 210b. Besides, a wavelength conversion layer 226a and a
wavelength conversion layer 226b may be separately disposed on the
second substrate 220 and the first substrate 202. An orthogonal
projection of the wavelength conversion layer 226a on the first
substrate 202 overlaps with the orthogonal projection of the light
emitting device 210a on the first substrate 202. An orthogonal
projection of the wavelength conversion layer 226b on the first
substrate 202 overlaps with the orthogonal projection of the light
emitting device 210b on the first substrate 202. Likewise, a color
filter layer 228a and a color filter layer 228b may be separately
disposed at the second substrate 220 and the first substrate 202.
An orthogonal projection of the color filter layer 228a on the
first substrate 202 overlaps with the orthogonal projection of the
light emitting device 210a on the first substrate 202. An
orthogonal projection of the color filter layer 228b on the first
substrate 202 overlaps with the light emitting device 210b on the
first substrate 202. More particularly, the wavelength conversion
layer 226a may be located between the color filter layer 228a and
the second substrate 220, and the wavelength conversion layer 226b
may be located between the color filter layer 228b and the first
substrate 202.
[0050] Referring to FIG. 13 and FIG. 15 together, a display
apparatus 50O shown in FIG. 15 is similar to the display apparatus
50M in FIG. 13. A major difference between the above two is that
the second substrate 220 in FIG. 15 is a protecting glass. In
addition, a color filter layer may not be disposed in the present
embodiment.
[0051] Referring to FIG. 15 and FIG. 16 together, a display
apparatus 50P in FIG. 16 is similar to the display apparatus 50O in
FIG. 15. A major difference between the above two is that the
display apparatus 50P in FIG. 16 further includes the light
shielding layer 222b, and the first reflection structure 216c is
located between the second substrate 220 and the wavelength
conversion layer 226.
[0052] Referring to FIG. 13 and FIG. 17 together, a display
apparatus 50Q in FIG. 17 is similar to the display apparatus 50M in
FIG. 13. A major difference between the above two is that the
display apparatus 50Q in FIG. 17 further includes a light emitting
device 210c and a second reflection structure 224c. The light
emitting device 210c is adjacent to the light emitting device 210b.
The second reflection structure 224c covers the light emitting
device 210c, while exposing a light emitting surface 218c of the
light emitting device 210c facing the second substrate 202. As
similar to the light emitting device 210b and the second reflection
structure 224b, the light emitted by the light emitting device 210c
is reflected by the first reflection structure 216c, and then
emitted from the first substrate 202. By simultaneously disposing
the light emitting device 210b and the light emitting device 210c,
illumination efficiency of the display apparatus 50Q toward the
first substrate 202 may be improved.
[0053] FIG. 18 to FIG. 28 are schematic partial cross-sectional
views of display apparatuses according to several embodiments of
the disclosure. In these embodiments, both of a light emitting
device 234a and a light emitting device 234b are flip-chip
LEDs.
[0054] Referring to FIG. 18, the light emitting device 234a may
include an electrode 229a, a light emitting structure 230a and an
electrode 232a. The electrode 229a and the electrode 232a are
separately disposed on the gate insulating layer GI1, and the light
emitting structure 230a is disposed on the electrode 229a and the
electrode 232a. The light emitting structure 230a may include the
P-type semiconductor layer, the multiple quantum well structure,
and the N-type semiconductor layer as shown in FIG. 5, which are
omitted from illustration herein. Likewise, the light emitting
device 234b may include an electrode 229b, a light emitting
structure 230b and an electrode 232b. The electrode 229b and the
electrode 232b are separately disposed on a gate insulating layer
GI2, and the light emitting structure 230b is disposed on the
electrode 229b and the electrode 232b. The light emitting structure
230b may include the P-type semiconductor layer, the multiple
quantum well structure, and the N-type semiconductor layer as shown
in FIG. 5, which are omitted from illustration herein. A second
reflection structure 235a covers the light emitting device 234a,
while exposing a light emitting surface 237a of the light emitting
device 234a. In addition, a second reflection structure 235b covers
the light emitting device 234b, while exposing a light emitting
surface 237b of the light emitting device 234b.
[0055] In addition, a display apparatus 50R may further include a
transparent conductive structure 236a and a transparent conductive
structure 238a, which are separately disposed between the electrode
229a and the gate insulating layer GI1, and between the electrode
232a and the gate insulating layer GI1, respectively. The
transparent conductive structure 236a extends to be electrically
connected to a drain D1 and the electrode 229a. Likewise, the
display apparatus 50R may also include a transparent conductive
structure 236b and a transparent conductive structure 238b, which
are separately disposed between the electrode 229b and the gate
insulating layer GI2, respectively. The transparent conductive
structure 236b extends to electrically connect the drain D2 and the
electrode 229b. Since the electrode 229a and the electrode 232a are
both disposed on the first substrate 202, a transparent conductive
structure may not be disposed at the second substrate 220 of the
present embodiment. Likewise, since the electrode 229b and the
electrode 232b are both disposed on the first substrate 202, a
transparent conductive structure may not be disposed at the second
substrate 220 in the present embodiment.
[0056] Referring to FIG. 18 and FIG. 19 together, a display
apparatus 50S in FIG. 19 is similar to the display apparatus 50R in
FIG. 18. A major difference between the above two is that the
display apparatus 50S in FIG. 19 may not include the second
reflection structure 235a and the second reflection structure 235b
as shown in FIG. 18. Besides, for simplicity, the driving device
T1, the driving device T2, the transparent conductive structure
236a, the transparent conductive structure 236b, and the
transparent conductive structure 238b in FIG. 18 are omitted in
FIG. 19.
[0057] Referring to FIG. 19 and FIG. 20 together, a display
apparatus 50T shown in FIG. 20 is similar to the display apparatus
50S in FIG. 19. A major difference between the above two is that
the display apparatus 50T in FIG. 20 may not include the light
shielding layer (such as the light shielding layer 222b shown in
FIG. 19) disposed on the second substrate 220, and the second
substrate 220 may be located between the first reflection structure
216c and the light emitting device 234b.
[0058] Referring to FIG. 20 and FIG. 21 together, a display
apparatus 50U in FIG. 21 is similar to the display apparatus 50T in
FIG. 20. A major difference between the above two is that display
apparatus 50U in FIG. 21 further includes the second reflection
structure 235a and the second reflection structure 235b, and the
first reflection structure 216c is located between the second
substrate 220 and the light emitting device 234b. The second
reflection structure 235a covers the light emitting device 234a,
while exposing the light emitting surface 237a of the light
emitting device 234a facing the second substrate 220. The second
reflection structure 235b covers the light emitting device 234b,
while exposing the light emitting surface 237b of the light
emitting device 234b facing the second substrate 220.
[0059] Referring to FIG. 19 and FIG. 22 together, a display
apparatus 50V in FIG. 22 is similar to the display apparatus 50S in
FIG. 22. A major difference between the above two is that display
apparatus 50V in FIG. 22 further includes the second reflection
structure 235a and the first reflection structure 240. The second
reflection structure 235a covers the light emitting device 234a,
while exposing the light emitting surface 237a of the light
emitting device 234a facing the second substrate 220. The first
reflection structure 240 covers the light emitting device 234b,
while exposing the light emitting surface 237b of the light
emitting device 234b facing the second substrate 202. Therefore, in
one embodiment, the light shielding layer 222b is optionally
disposed at the second substrate 220 depending on the reflectivity
of the first reflection structure 240.
[0060] Referring to FIG. 20 and FIG. 23 together, a display
apparatus 50W in FIG. 23 is similar to the display apparatus 50T in
FIG. 20. A major difference between the above two is that display
apparatus 50W in FIG. 23 further includes a wavelength conversion
layer 242a and a wavelength conversion layer 242b. The wavelength
conversion layer 242a may be disposed on a surface of the light
emitting device 234a facing the second substrate 220, and the
wavelength conversion layer 242b may be disposed on a surface of
the light emitting device 234b facing the second substrate 220. In
addition, the first reflection structure 216c in FIG. 23 is
disposed between the second substrate 220 and the light emitting
device 234b.
[0061] Referring to FIG. 20 and FIG. 24 together, a display
apparatus 50X in FIG. 24 is similar to the display apparatus 50T in
FIG. 20. A major difference between the above two is that the
display apparatus 50X in FIG. 24 further includes a wavelength
conversion layer 244, which may be disposed at the second substrate
220. An orthogonal projection of the wavelength conversion layer
244 on the first substrate 202 overlaps with orthogonal projections
of the light emitting device 234a and the light emitting device
234b on the first substrate 202. More particularly, the second
substrate 220 may be located between the first reflection structure
216c and the wavelength conversion layer 244, and the wavelength
conversion layer 244 may be located between the second substrate
220 and the light emitting device 234b.
[0062] Referring to FIG. 19 and FIG. 25 together, a display
apparatus 50Y in FIG. 25 is similar to the display apparatus 50S in
FIG. 19. A major difference between the above two is that the
display apparatus 50Y in FIG. 25 further includes a wavelength
conversion layer 246a and a wavelength conversion layer 246b. The
wavelength conversion layer 246a is disposed at the second
substrate 220, and is located between the second substrate 220 and
the light emitting device 234a, so that an orthogonal projection of
the wavelength conversion layer 246a on the first substrate 202
overlaps with an orthogonal projection of the light emitting device
234a on the first substrate 202. The wavelength conversion layer
246b is disposed on the first substrate 202, and the first
substrate 202 is located between the light emitting device 234b and
the wavelength conversion layer 246b, such that an orthogonal
projection of the wavelength conversion layer 246b on the first
substrate 202 overlaps with an orthogonal projection of the light
emitting device 234b on the first substrate 202.
[0063] Referring to FIG. 21 and FIG. 26 together, a display
apparatus 50Z in FIG. 26 is similar to the display apparatus 50U in
FIG. 21. A major difference between the above two is that the
display apparatus 50Z in FIG. 26 further includes a wavelength
conversion layer 248 and a color filter layer 250, which are
disposed at the second substrate 220. More particularly, the color
filter layer 250 may be located between the second substrate 220
and the wavelength conversion layer 248, and an orthogonal
projection of the color filter layer 250 on the first substrate 202
overlaps with the orthogonal projections of the light emitting
device 234a and the light emitting device 234b on the first
substrate 202. Besides, the second substrate 220 may be located
between the first reflection structure 216c and the color filter
layer 250.
[0064] Referring to FIG. 25 and FIG. 27 together, a display
apparatus 60A in FIG. 27 is similar to the display apparatus 50Y in
FIG. 25. A major difference of the above two is that the display
apparatus 60A in FIG. 27 further includes the second reflection
structure 235a, the second reflection structure 235b, a color
filter layer 252a, and a color filter layer 252b. The second
reflection structure 235a may cover the light emitting device 234a,
while exposing the light emitting surface 237a of the light
emitting device 234a facing the second substrate 220. The second
reflection structure 235b covers the light emitting device 234b,
while exposing the light emitting surface 237b of the light
emitting device 234b facing the second substrate 220. The color
filter layer 252a and the color filter layer 252b are respectively
disposed at the second substrate 220 and the first substrate 202.
More particularly, the color filter layer 252a is located between
the second substrate 220 and the wavelength conversion layer 246a,
and the color filter layer 252b is located between the first
substrate 202 and the wavelength conversion layer 246b.
[0065] Referring to FIG. 26 and FIG. 28 together, a display
apparatus 60B in FIG. 28 and the display apparatus 50Z in FIG. 26.
A major difference of the above two is that the display apparatus
60B in FIG. 28 further includes a light emitting device 234c and a
second reflection structure 235c. The light emitting device 234c is
adjacent to the light emitting device 234b. The second reflection
structure 235c covers the light emitting device 234c, while
exposing a light emitting surface 237c of the light emitting device
234c facing the second substrate 220. As similar to the light
emitting device 234b, the light emitting device 234c also includes
an electrode 228c, a light emitting structure 230c and an electrode
232c. By disposing both of the light emitting device 234b and the
light emitting device 234c in the display apparatus 60B,
illumination efficiency of the display apparatus 60B toward the
first substrate 202 may be improved.
[0066] In summary of the above, the light emitted by the light
emitting device can be reflected by the first reflection structure,
and then emitted outward from the first substrate. In this way, the
design of the present embodiment is advantageous for readily
changing the light emission direction of the light emitting device,
such that the display apparatus is more likely to meets different
design requirements. On the other hand, through the aforementioned
design, the present embodiment may be applied to a large size
display apparatus.
[0067] Although the disclosure has been disclosed by the
embodiments as above, the embodiments are not intended to limit the
disclosure. People having ordinary skill in the art can make some
changes and modifications without departing from the spirit and the
scope of the disclosure. Therefore, the protected scope of the
disclosure shall be defined by the attached claims.
* * * * *