Ferroelectric Memory Cells Including Ferroelectric Crystalline Materials Having Polar And Chiral Crystal Structures, And Related

Pandey; Sumeet C. ;   et al.

Patent Application Summary

U.S. patent application number 16/284946 was filed with the patent office on 2019-06-20 for ferroelectric memory cells including ferroelectric crystalline materials having polar and chiral crystal structures, and related. The applicant listed for this patent is Micron Technology, Inc.. Invention is credited to Lei Bi, Ashonita A. Chavan, Roy E. Meade, Sumeet C. Pandey, Qian Tao.

Application Number20190189627 16/284946
Document ID /
Family ID54554506
Filed Date2019-06-20
Patent Diagrams and Documents
D00000
D00001
D00002
D00003
D00004
D00005
XML
US20190189627A1 – US 20190189627 A1

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed