U.S. patent application number 15/974858 was filed with the patent office on 2019-06-06 for heating carrier device for use on sputtering cathode assembly.
The applicant listed for this patent is NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY. Invention is credited to HUI-YUN BOR, SHIH-FAN CHEN, CHIEN-HUNG LIAO, CHOU-YU LIN, SHEA-JUE WANG, CHAO-NAN WEI.
Application Number | 20190172691 15/974858 |
Document ID | / |
Family ID | 65034310 |
Filed Date | 2019-06-06 |
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United States Patent
Application |
20190172691 |
Kind Code |
A1 |
LIN; CHOU-YU ; et
al. |
June 6, 2019 |
HEATING CARRIER DEVICE FOR USE ON SPUTTERING CATHODE ASSEMBLY
Abstract
A heating carrier device for use on a sputtering cathode
assembly has a heating carrier for heating a sputtering target to
control a sputtering target temperature; a magnetic component for
generating a magnetic field; a thermal insulation component
disposed between the heating carrier and the magnetic component;
and a cooling system for cooling the magnetic component. Therefore,
the heating carrier device reduces the bonding strength of the
sputtering target, reduces the particle size of sputtering
products, and grows high-quality, uniform thin films.
Inventors: |
LIN; CHOU-YU; (TAOYUAN CITY,
TW) ; BOR; HUI-YUN; (TAOYUAN CITY, TW) ; WEI;
CHAO-NAN; (TAOYUAN CITY, TW) ; LIAO; CHIEN-HUNG;
(TAOYUAN CITY, TW) ; WANG; SHEA-JUE; (TAIPEI,
TW) ; CHEN; SHIH-FAN; (TAIPEI, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY |
TAOYUAN CITY |
|
TW |
|
|
Family ID: |
65034310 |
Appl. No.: |
15/974858 |
Filed: |
May 9, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 37/3435 20130101;
H01J 37/345 20130101; H01J 37/3497 20130101; H01J 2237/002
20130101 |
International
Class: |
H01J 37/34 20060101
H01J037/34 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 4, 2017 |
TW |
106142322 |
Claims
1. A heating carrier device for use on a sputtering cathode
assembly, the heating carrier device comprising: a heating carrier
for heating a sputtering target to control a sputtering target
temperature; a magnetic component for generating a magnetic field;
a thermal insulation component disposed between the heating carrier
and the magnetic component; and a cooling system for cooling the
magnetic component.
2. The heating carrier device of claim 1, wherein the heating
carrier has a temperature detection component for detecting the
sputtering target temperature.
3. The heating carrier device of claim 1, wherein the heating
carrier keeps the sputtering target at a control temperature
ranging from room temperature to two-thirds of a melting point of a
sputtering target material.
4. The heating carrier device of claim 1, wherein the cooling
system cools the sputtering target.
5. The heating carrier device of claim 1, wherein the thermal
insulation component is made of a ceramic material.
6. The heating carrier device of claim 1, wherein the cooling
system is a water-cooled cooling system.
7. The heating carrier device of claim 1, wherein the magnetic
component is a permanent magnet.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This non-provisional application claims priority under 35
U.S.C. .sctn. 119(a) on Patent Application No(s). 106142322 filed
in Taiwan, R.O.C. on Dec. 4, 2017, the entire contents of which are
hereby incorporated by reference.
TECHNICAL FIELD
[0002] The present disclosure relates to heating carrier devices
and, more particularly, to a heating carrier device for use on a
sputtering cathode assembly.
RELATED ART
[0003] Crucial and fundamental to plenty scientific and industrial
applications, conventional thin-film sputtering technology requires
a vacuum container to contain therein a parallel-panel thin-film
sputtering device composed of a metallic sputtering target
(cathode) and a substrate. An inert gas, such as helium, is
introduced into the vacuum container. A DC voltage or
high-frequency voltage is applied to the target to generate a
vertical electric field on the surface of the target and thus
generate discharge plasma in the vicinity of the target. Finally,
an intended thin film is plated to the surface of the resultant
plasma ions sputtering substrate.
[0004] To enhance the efficiency of effective plasma bombardment,
the conventional thin film sputtering technology features providing
a magnet module on the back of the target in a cathode assembly to
increase the ionization rate of a sputtering gas and thin-film
deposition speed. However, during a sputtering process, a magnet
must be cooled in order to ensure its optimal performance. In view
of this, conventional cathode assembly design requires a target to
demonstrate a temperature difference across itself while being
sputtering is taking place. As a result, stress is generated inside
the target because of the temperature difference. Furthermore,
material bonding inside the target is so energy-intensive that the
bombarded material surface of the target looks like a rigid
object's surface hit by bullets in terms of characteristics and
distribution. The bombardment of the target produces plating
products in the form of large atomic or molecular clusters and thus
affects the glossiness and quality of the thin films thus
deposited, or even the applicability thereof.
[0005] Therefore, related industrial sectors have to develop a
target heating technology applicable to thin-film sputtering
deposition to not only reduce the stress otherwise generated inside
a target because of a temperature difference (so as to reduce
greatly the chance that the internal structure of the target will
be damaged by the stress and thereby extend the target's service
life), but also improve the size of the clusters leaving the
bombarded substances (to render the deposited thin films more
delicate and enhance the uniformity, glossiness and characteristics
of the deposited thin films.) Hence, a target heating technology
applicable to thin-film sputtering deposition is important to
magnetron sputtering-based thin film production technology.
SUMMARY
[0006] In view of the aforesaid drawbacks of the prior art, it is
an objective of the present disclosure to provide a heating carrier
device for use on a sputtering cathode assembly. The present
disclosure features integration of a heating carrier, a magnetic
component, a thermal insulation component, and a cooling system.
The thermal insulation component prevents deterioration of the
magnetic component while the sputtering target is being heated. The
heating carrier controls a sputtering target temperature, precludes
a temperature difference across the sputtering target, prevents
stress from being generated in the sputtering target, enables the
sputtering target to stay at a control temperature, optimizes the
size of the clusters emitted from the substance being bombarded,
and enhances the uniformity, glossiness and characteristics of the
deposited thin films.
[0007] In order to achieve the above and other objectives, the
present disclosure provides a heating carrier device for use on a
sputtering cathode assembly. The heating carrier device comprises:
a heating carrier for heating a sputtering target to control a
sputtering target temperature; a magnetic component for generating
a magnetic field; a thermal insulation component disposed between
the heating carrier and the magnetic component; and a cooling
system for cooling the magnetic component.
[0008] Regarding the heating carrier device for use on a sputtering
cathode assembly, the heating carrier has a temperature detection
component for detecting the sputtering target temperature.
[0009] Regarding the heating carrier device for use on a sputtering
cathode assembly, the heating carrier keeps the sputtering target
at a control temperature ranging from room temperature to
two-thirds of a melting point of a sputtering target material.
[0010] Regarding the heating carrier device for use on a sputtering
cathode assembly, the cooling system cools the sputtering
target.
[0011] Regarding the heating carrier device for use on a sputtering
cathode assembly, the thermal insulation component is made of a
ceramic material.
[0012] Regarding the heating carrier device for use on a sputtering
cathode assembly, the cooling system is a water-cooled cooling
system.
[0013] Regarding the heating carrier device for use on a sputtering
cathode assembly, the magnetic component is a permanent magnet.
[0014] The above summary, the detailed description below, and the
accompanying drawings further explain the technical means and
measures taken to achieve predetermined objectives of the present
disclosure and the effects thereof. The other objectives and
advantages of the present disclosure are explained below and
illustrated with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] FIG. 1 is a schematic view of a heating carrier device for
use on a sputtering cathode assembly according to the first
embodiment of the present disclosure;
[0016] FIG. 2 is a schematic view of the heating carrier device
according to the second embodiment of the present disclosure;
[0017] FIG. 3 is a schematic view of the heating carrier device
according to the third embodiment of the present disclosure;
[0018] FIG. 4 is a schematic view of the heating carrier device
according to the fourth embodiment of the present disclosure;
and
[0019] FIG. 5 are schematic views of a sputtering target's surface
bombarded by argon ions at different temperatures, with view (a)
depictive of an unheated sputtering target that produces large
particle clusters, and view (b) depictive of a heated sputtering
target that produces small particle clusters.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0020] Fine structures and advantages of the present disclosure are
described below with reference to preferred embodiments of the
present disclosure to enable persons skilled in the art to gain
insight into the technical features of the present disclosure.
[0021] Referring to FIG. 1, in an embodiment of the present
disclosure, a heating carrier device (100) for use on a sputtering
cathode assembly comprises a heating carrier (120), a magnetic
component (140), a thermal insulation component (130), and a
cooling system (150). The heating carrier (120) heats a sputtering
target (110) to control a sputtering target temperature. The
sputtering target (110) is slender, cylindrical, or the like. The
magnetic component (140) generates a magnetic field. The magnetic
component (140) is a permanent magnet. However, in a variant
embodiment, the magnetic component is an electromagnet or any other
magnetic component. The thermal insulation component (130) is
disposed between the heating carrier (120) and the magnetic
component (140). The thermal insulation component is made of a
ceramic material. However, in a variant embodiment, the thermal
insulation component is made of fiberglass or made of any other
material that renders it functionally unaffected even at the
heating temperature of the heating carrier (120), but is not
limited to this embodiment. The cooling system (150) cools the
magnetic component (140) and is a water-cooled cooling system, but
is not limited to this embodiment; in a variant embodiment, the
cooling system is a gas-cooled cooling system or any other type of
cooling device. During the sputtering process, the heating carrier
(120) heats up the sputtering target (110) to an appropriate
control temperature; however, despite the high temperature, fine
structure of crystal grains in the sputtering target (110) neither
moves out of position nor turns into any other structural phase.
Afterward, the heat generated from the heating carrier (120) is
kept out by the thermal insulation component (130). Hence, the
magnetic component (140) retains its magnetic functionality (by
staying cool) during a duty cycle while the sputtering target (110)
is being heated.
[0022] Referring to FIG. 2, there is shown a schematic view of the
heating carrier device according to the second embodiment of the
present disclosure. The heating carrier device (100a) of the second
embodiment differs from the heating carrier device (100) of the
first embodiment in functions and structure in that the heating
carrier device (100a) further comprises two heat resistant
components (231). The two heat resistant components (231) are
attached to two ends of the sputtering target (110a), respectively,
to stop heat from reaching the sputtering target (110a).
[0023] Referring to FIG. 3, there is shown a schematic view of the
heating carrier device according to the third embodiment of the
present disclosure. As shown in the diagram, a power system (261)
supplies power. The anode of the power system (261) is connected to
a cathode assembly (264). A cathode of the power system (261) is
connected to a sputtering target (210). Both the cathode assembly
(264) and the sputtering target (210) are made of a conductive
metal, thereby allowing the cathode assembly (264) to carry
positive charges and the sputtering target (210) to carry negative
charges. The power system (261) further comprises a fixing device
(263) for fixing an empty cavity in place. The empty cavity has
therein the cathode assembly (264), the sputtering target (210),
and a heating carrier device (200) for use on the sputtering
cathode assembly. The heating carrier device (200) comprises a
heating carrier (220), a thermal insulation component (230), a
magnetic component (240) and a cooling system (250). Before the
sputtering process starts, a vacuum system (269) removes air from
the empty cavity to create a vacuum in the empty cavity. Then, a
gas delivering pipe (267) introduces a specific working gas, such
as argon (or any other inert gas) or oxygen, into the empty cavity.
Afterward, a vacuum gauge (266) measures the pressure in the empty
cavity. It is only when the vacuum gauge (266) shows the pressure
in the empty cavity reaches an appropriate working pressure, say
10.sup.-3.about.10.sup.-5 torr, that the sputtering process
starts.
[0024] The sputtering target (210) is disposed on the heating
carrier (220). The heating carrier (220) heats the sputtering
target (210) and exercises temperature control. A thermal
insulation component (230) is disposed below the heating carrier
(220) to block the heat generated from the heating carrier (220). A
protective layer (262) fixes the heating carrier (220) and the
thermal insulation component (230) in place. The magnetic component
(240) is disposed below the thermal insulation component (230) to
attract and actuate argon to bombard the sputtering target (210).
The cooling system (250) is disposed below the magnetic component
(240) to cool the magnetic component (240) and thus ensure that the
magnetic function thereof remains unabated. A sight glass (226) is
disposed outside the empty cavity to enable observation of the
sputtering process. The sputtering process involves placing below
the cathode assembly (264) a substrate (265) to be sputtered,
bombarding the sputtering target (210) with gas ions to generate a
plurality of particle clusters, and depositing the plurality of
particle clusters on the surface of the substrate (265) by the
cathode assembly (264).
[0025] Referring to FIG. 4, there is shown a schematic view of the
heating carrier device according to the fourth embodiment of the
present disclosure. The heating carrier device (200a) of the fourth
embodiment differs from the heating carrier device (200) of the
third embodiment in functions and structure in that the heating
carrier device (200a) further comprises an auxiliary cooling device
(not shown). In the fourth embodiment, the auxiliary cooling device
is disposed in the cathode assembly (264a) to cool the cathode
assembly (264a). In the fourth embodiment, the auxiliary cooling
device is a water-cooled cooling system. In a variant embodiment,
the auxiliary cooling device is a gas-cooled cooling system or any
other type of cooling device, but is not limited to this
embodiment.
[0026] Referring to FIG. 5, during the sputtering process, argon
ions (370) in plasma are subjected to an electric field, energized,
and driven toward the cathode to therefore bombard the surface of
an unheated sputtering target (311), causing the unheated
sputtering target (311) to sputter. As shown in FIG. 5 (a), by the
laws of thermodynamics, where a sputtering target stays at a high
temperature below its melting point, its temperature indicates the
average kinetic energy attributed to vibration of its
lattice-confined atoms. The high temperature augments the vibration
and thus destabilizes the atoms. The destabilized atoms have higher
potential energy and form weaker bonds with each other. Hence, it
is inferred that more atoms are ejected from a heated sputtering
target (312) being bombarded by the argon ions (370) as shown in
FIG. 5 (b), thereby enhancing sputtering efficiency and quality of
the deposited thin films.
[0027] Under the aforesaid working pressure, the unheated
sputtering target (311) has strong bonds between atoms and thus
emits particles, among which particle clusters predominate and may
be neutral or ionic. By contrast, the heated sputtering target
(312) has weak bonds between atoms and thus emits particles, among
which small particle clusters, single atoms, or ions
predominate.
[0028] In an embodiment of the present disclosure, the heating
carrier has a temperature detection component for detecting the
temperature of the sputtering target. The sputtering target stays
at a control temperature as soon as the heating carrier stops
heating. The control temperature ranges from room temperature to
two-thirds of the melting point of a sputtering target material,
such as gold, copper, aluminum or titanium. The cooling system
cools the sputtering target.
[0029] According to the prior art, a conventional magnetron
sputtering cathode assembly is ineffective in cooling because of
the presence of a magnet in a cathode assembly, whereas a
sputtering target on the cathode assembly stays at low temperature
during a sputtering process. As a result, the conventional
magnetron sputtering cathode assembly fails to facilitate
bombardment of plasma particles and resultant emission of
particles. By contrast, the present disclosure improves the size of
the clusters leaving the bombarded substances to render the
deposited thin films more delicate and enhance the uniformity,
glossiness and characteristics of the deposited thin films.
Furthermore, by precluding a temperature gradient across the
target, the present disclosure reduces the thermal stress inside
the target and thus reduces the chance that the internal structure
of the target will be damaged by the stress, thereby extending the
target's service life.
[0030] The above embodiments are illustrative of the features and
effects of the present disclosure rather than restrictive of the
scope of the substantial technical disclosure of the present
disclosure. Persons skilled in the art may modify and alter the
above embodiments without departing from the spirit and scope of
the present disclosure. Therefore, the scope of the protection of
rights of the present disclosure shall be defined by the appended
claims.
* * * * *