U.S. patent application number 16/197458 was filed with the patent office on 2019-05-30 for apparatus and method for processing substrate.
The applicant listed for this patent is SEMES CO., LTD.. Invention is credited to JINWOO JUNG, YONG HEE LEE, YOUNG HUN LEE, EUI SANG LIM.
Application Number | 20190164787 16/197458 |
Document ID | / |
Family ID | 66632699 |
Filed Date | 2019-05-30 |
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United States Patent
Application |
20190164787 |
Kind Code |
A1 |
LEE; YONG HEE ; et
al. |
May 30, 2019 |
APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
Abstract
Disclosed is a method for processing a substrate, comprising a
liquid processing step of performing liquid processing on the
substrate by supplying a processing liquid onto the substrate in a
liquid processing chamber, a transfer step of transferring the
substrate from the liquid processing chamber to a drying chamber,
and a drying step of drying the substrate in the drying chamber. In
the drying step, the substrate is dried while an edge region of the
substrate other than a central region of the substrate is supported
by a support unit, and in the liquid processing step, the liquid
processing is performed on the substrate such that a height of the
processing liquid remaining on the edge region of the substrate is
greater than a height of the processing liquid remaining on the
central region of the substrate when the liquid processing is
completed in the liquid processing chamber.
Inventors: |
LEE; YONG HEE; (Cheonan-si,
KR) ; LEE; YOUNG HUN; (Cheonan-si, KR) ; JUNG;
JINWOO; (Seoul, KR) ; LIM; EUI SANG;
(Cheonan-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SEMES CO., LTD. |
Chungcheongnam-do |
|
KR |
|
|
Family ID: |
66632699 |
Appl. No.: |
16/197458 |
Filed: |
November 21, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67034 20130101;
H01L 21/6715 20130101; H01L 21/02101 20130101; H01L 21/68764
20130101; H01L 21/68707 20130101; H01L 21/6719 20130101; H01L
21/67028 20130101; H01L 21/67103 20130101; H01L 21/02057 20130101;
H01L 21/67051 20130101 |
International
Class: |
H01L 21/67 20060101
H01L021/67; H01L 21/02 20060101 H01L021/02; H01L 21/687 20060101
H01L021/687 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 30, 2017 |
KR |
10-2017-0162567 |
Mar 16, 2018 |
KR |
10-2018-0031000 |
Claims
1. A method for processing a substrate, the method comprising: a
liquid processing step for performing liquid processing on the
substrate by supplying a processing liquid onto the substrate in a
liquid processing chamber; a transfer step for transferring the
substrate from the liquid processing chamber to a drying chamber;
and a drying step for drying the substrate in the drying chamber,
wherein in the drying step, the substrate is dried while an edge
region of the substrate excluding a central region of the substrate
is supported by a support unit, and wherein in the liquid
processing step, the liquid processing is performed on the
substrate such that a height of the processing liquid remaining on
the edge region of the substrate is higher than a height of the
processing liquid remaining on the central region of the substrate
when the liquid processing is completed in the liquid processing
chamber.
2. The method of claim 1, wherein the liquid processing step
comprises: a liquid supply step for supplying the processing liquid
toward the substrate rotating; and a liquid level adjustment step
for stopping supplying the processing liquid and rotating the
substrate after the liquid supply step.
3. The method of claim 2, wherein the substrate is rotated at a
first speed in the liquid supply step and at a second speed in the
liquid level adjustment step, and the second speed is lower than
the first speed.
4. The method of claim 3, wherein the liquid supply step comprises:
a first supply step for rotating the substrate at a first speed and
supplying the processing liquid toward the substrate at a first
flow rate; and a second supply step for rotating the substrate at a
second speed and supplying the processing liquid toward the
substrate at a second flow rate, wherein the first speed is higher
than the second speed, and wherein the first flow rate is greater
than the second flow rate.
5. The method of claim 1, wherein in the liquid processing step, a
central nozzle and an edge nozzle simultaneously supply the
processing liquid onto the substrate, wherein the central nozzle
supplies the processing liquid onto the central region of the
rotating substrate, and the edge nozzle supplies the processing
liquid onto the edge region of the rotating substrate, and wherein
a flow rate of the processing liquid supplied by the edge nozzle is
greater than a flow rate of the processing liquid supplied by the
central nozzle.
6. The method of claim 1, wherein in the liquid processing step,
the processing liquid is supplied onto the rotating substrate
through a liquid supply nozzle, wherein a dispensing location of
the processing liquid supplied from the liquid supply nozzle is
moved between the central region and the edge region of the
substrate, and wherein a flow rate of the processing liquid
supplied onto the edge region of the substrate is modified to be
greater than a flow rate of the processing liquid supplied onto the
central region of the substrate.
7. The method of claim 1, wherein in the liquid processing step,
the substrate is processed by sequentially supplying a first
liquid, a second liquid, and a third liquid onto the substrate, and
the processing liquid is the third liquid, wherein in the drying
step, the substrate is dried using a supercritical fluid, and
wherein the third liquid dissolves better in the supercritical
fluid than the second fluid.
8. The method of claim 7, wherein the third liquid comprises
isopropyl alcohol, and wherein the supercritical fluid is carbon
dioxide.
9. The method of claim 7, wherein the substrate is transferred into
the drying chamber, with the processing liquid remaining on the
substrate.
10. The method of claim 7, wherein the first liquid is an etching
fluid, and the second liquid neutralizes the first liquid and
dissolves better in the third liquid than the first liquid.
11. The method of claim 1, wherein the height of the processing
liquid on the edge region of the substrate is higher than the
height of the processing liquid on the central region of the
substrate when the substrate is transferred into the drying
chamber.
12. The method of claim 3, wherein the second speed ranges from 10
RPM to 100 RPM.
13. The method of claim 12, wherein the first speed is 200 RPM or
more.
14. An apparatus for processing a substrate, the apparatus
comprising: a liquid processing chamber configured to perform
liquid processing on the substrate by supplying a processing liquid
onto the substrate; a drying chamber configured to remove the
processing liquid from the substrate; a transfer unit configured to
transfer the substrate between the liquid processing chamber and
the drying chamber; and a controller configured to control the
liquid processing chamber, the drying chamber, and the transfer
unit, wherein the liquid processing chamber comprises: a cup having
a processing space inside; a support unit configured to support and
rotate the substrate in the processing space; and a liquid supply
unit configured to supply the processing liquid onto the substrate,
wherein the drying chamber comprises: a body having an inner space
inside; a support configured to support an edge region of the
substrate in the inner space; a fluid supply unit configured to
supply a fluid for drying into the inner space; and an exhaust unit
configured to exhaust the fluid in the inner space, and wherein the
controller is configured to control the liquid processing chamber,
the drying chamber, and the transfer unit to sequentially perform a
liquid processing step for performing liquid processing on the
substrate by supplying the processing liquid onto the substrate in
the liquid processing chamber, a transfer step for transferring the
substrate from the liquid processing chamber to the drying chamber,
and a drying step for drying the substrate in the drying chamber
and to allow a height of the processing liquid remaining on the
edge region of the substrate to be higher than a height of the
processing liquid remaining on a central region of the substrate
when the liquid processing is completed in the liquid processing
chamber in the liquid processing step.
15. The apparatus of claim 14, wherein the controller is configured
to control the liquid processing chamber such that the liquid
processing step comprises a liquid supply step for rotating the
substrate and supplying the processing liquid toward the substrate
and a liquid level adjustment step for rotating the substrate and
stopping supplying the processing liquid after the liquid supply
step.
16. The apparatus of claim 14, wherein the controller is configured
to control the liquid processing chamber such that a rotating speed
of the substrate in the liquid supply step is higher than a
rotating speed of the substrate in the liquid level adjustment
step.
17. The apparatus of claim 16, wherein the liquid supply unit
comprises: a central nozzle configured to supply the processing
liquid onto the central region of the substrate; and an edge nozzle
configured to supply the processing liquid onto the edge region of
the substrate, wherein the controller is configured to control the
liquid processing chamber such that the edge nozzle supplies the
processing liquid onto the edge region of the rotating substrate at
the same time that the central nozzle supplies the processing
liquid onto the central region of the rotating substrate, and a
flow rate of the processing liquid supplied by the edge nozzle is
greater than a flow rate of the processing liquid supplied by the
central nozzle in the liquid supply step.
18. The apparatus of claim 14, wherein in the liquid processing
step, the substrate is processed by sequentially supplying a first
liquid, a second liquid, and a third liquid onto the substrate, and
the processing liquid is the third liquid, wherein in the drying
step, the substrate is dried using a supercritical fluid, wherein
the third liquid dissolves better in the supercritical fluid than
the second fluid, and wherein the substrate is transferred into the
drying chamber, with the processing liquid remaining on the
substrate.
19. A method for processing a substrate, the method comprising: a
liquid processing process of performing liquid processing on the
substrate by supplying a processing liquid onto the substrate in a
liquid processing chamber; a liquid level adjustment process of
adjusting a level of the processing liquid remaining on the
substrate after the liquid processing process; and a drying process
of removing the processing liquid from the substrate, wherein the
liquid level adjustment process is performed by rotating the
substrate while the supply of the processing liquid onto the
substrate is stopped.
20. The method of claim 19, wherein in the liquid level adjustment
process, the level of the processing liquid remaining on the
substrate is adjusted by controlling a rotating speed of the
substrate.
21. The method of claim 19, wherein the rotating speed of the
substrate in the liquid level adjustment process is a first set
speed when the level of the processing liquid on the substrate that
is set before the drying process is a first level, wherein the
rotating speed of the substrate in the liquid level adjustment
process is a second set speed when the level of the processing
liquid on the substrate that is set before the drying process is a
second level, and wherein the first level is higher than the second
level, and the first set speed is lower than the second set
speed.
22. The method of claim 20, wherein the liquid processing process
and the liquid level adjustment process are performed in the liquid
processing chamber, wherein the drying process is performed in a
drying chamber, and wherein the substrate on which the liquid level
adjustment process is completely performed in the liquid processing
chamber is transferred into the drying chamber by a transfer
robot.
23. The method of claim 20, wherein the rotating speed of the
substrate in the liquid level adjustment process is lower than that
of the substrate in the liquid processing process.
24. The method of claim 19, wherein in the liquid processing
process, the substrate is processed by sequentially supplying a
first liquid, a second liquid, and a third liquid onto the
substrate, and the processing liquid is the third liquid, wherein
in the drying step, the substrate is dried using a supercritical
fluid, and wherein the third liquid dissolves better in the
supercritical fluid than the second fluid.
25. The method of claim 19, wherein a height of the processing
liquid on an edge region of the substrate is higher than a height
of the processing liquid on a central region of the substrate when
the substrate is transferred into the drying chamber.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] A claim for priority under 35 U.S.C. .sctn. 119 is made to
Korean Patent Applications No. 10-2017-0162567 filed on Nov. 30,
2017 and No. 10-2018-0031000 filed on Mar. 16, 2018, in the Korean
Intellectual Property Office, the entire contents of which are
hereby incorporated by reference.
BACKGROUND
[0002] Embodiments of the inventive concept described herein relate
to an apparatus and method for processing a substrate, and more
particularly, relate to an apparatus and method for processing a
substrate with a liquid supplied onto the substrate and then
removing the liquid.
[0003] Semiconductor processes comprise a process of cleaning a
thin film, foreign matter, particles, or the like on a substrate.
The cleaning process is performed by placing the substrate on a
spin head such that a pattern face is directed upward or downward,
supplying a processing liquid onto the substrate while rotating the
spin head, and drying the substrate.
[0004] Recently, a supercritical fluid is used in a process of
cleaning a substrate. For example, a liquid processing chamber for
performing liquid processing on a substrate by supplying a
processing liquid onto a substrate and a drying chamber for
removing the processing liquid from the substrate by using a
supercritical fluid after the liquid processing are provided, and
the substrate completely processed in the liquid processing chamber
is transferred into the drying chamber by a transfer robot.
[0005] FIG. 17 is a view illustrating a drying chamber 1000 for
drying a substrate W using a supercritical fluid. The drying
chamber 1000 has a support unit 1200 therein, which supports the
substrate W. The support unit 1200 supports an edge region of the
bottom side of the substrate W.
[0006] When a processing liquid is removed from the substrate W, it
is preferable that all the processing liquid be removed from the
entire region of the substrate W by the supercritical fluid. If the
processing liquid on the substrate W is removed by natural drying
or heating rather than the supercritical fluid, a leaning
phenomenon arises in which patterns lean as shown by "A" of FIG.
18.
[0007] When the substrate W is placed on the support unit 1200 to
remove the processing liquid on the substrate W by using the drying
chamber 1000 with the structure illustrated in FIG. 17, the
substrate W sags in the middle as illustrated in FIG. 19. Due to
the sagging of the substrate W, part of the processing liquid
remaining on the edge region of the substrate W flows toward the
central region of the substrate W. In this case, the thickness of
the processing liquid on the edge region of the substrate W is
decreased, and the edge region of the substrate W is naturally
dried before the supercritical fluid is supplied. Furthermore,
since a large amount of processing liquid has to be removed from
the central region of the substrate W, it takes a significant
amount of time to dry the processing liquid. These problems grow
bigger with an increase in the diameter of the substrate W.
[0008] The drying chamber 1000 is heated such that the fluid
supplied into the drying chamber 1000 to remove the processing
fluid is maintained in a supercritical state. In this case, the
temperatures of structures, such as outer walls of the drying
chamber 1000 and the support unit 1200, are higher than the
temperature in the inner space of the drying chamber 1000.
Therefore, a larger amount of processing liquid is evaporated by
the heating from the edge region of the substrate W brought into
contact with the support unit 1200, and the edge region of the
substrate W is likely to be dried by the heating or naturally
dried.
[0009] In addition, even when a substrate W, the entire bottom side
of which is supported, is dried using a supercritical fluid, the
following problems are encountered. When removing a processing
liquid from the substrate W by drying the substrate W after
processing the substrate W with the processing liquid, it takes a
large amount of time to dry the substrate W in the case where a
large amount of processing liquid remains on the substrate W. If
the substrate W is processed using a small amount of processing
liquid to reduce drying time, a liquid remaining on the substrate W
is not sufficiently replaced with the processing liquid.
SUMMARY
[0010] Embodiments of the inventive concept provide a substrate
processing apparatus and method for improving drying efficiency
when drying a substrate using a supercritical fluid.
[0011] Furthermore, embodiments of the inventive concept provide a
substrate processing apparatus and method for preventing an edge
region of a substrate from being naturally dried.
[0012] Moreover, embodiments of the inventive concept provide a
substrate processing apparatus and method for preventing a large
amount of time from being taken to remove a processing liquid when
drying a substrate.
[0013] In addition, embodiments of the inventive concept provide a
substrate processing apparatus and method for adjusting a level of
a processing liquid remaining on a substrate to a set level when
the substrate is transferred into a drying chamber from a liquid
processing chamber.
[0014] Aspects of the inventive concept are not limited thereto,
and any other aspects not mentioned herein will be clearly
understood from the following description by those skilled in the
art to which the inventive concept pertains.
[0015] According to an aspect of an embodiment, a method for
processing a substrate comprises a liquid processing step of
performing liquid processing on the substrate by supplying a
processing liquid onto the substrate in a liquid processing
chamber, a transfer step of transferring the substrate from the
liquid processing chamber to a drying chamber, and a drying step of
drying the substrate in the drying chamber. In the drying step, the
substrate is dried while an edge region of the substrate other than
a central region of the substrate is supported by a support unit,
and in the liquid processing step, the liquid processing is
performed on the substrate such that a height of the processing
liquid remaining on the edge region of the substrate is higher than
a height of the processing liquid remaining on the central region
of the substrate when the liquid processing is completed in the
liquid processing chamber.
[0016] According to an embodiment, the liquid processing step may
comprise a liquid supply step in which the substrate is rotated and
the processing liquid is supplied toward the substrate and a liquid
level adjustment step in which the substrate is rotated and the
supply of the processing liquid is stopped after the liquid supply
step.
[0017] According to an embodiment, the substrate may be rotated at
a first speed in the liquid supply step and at a second speed in
the liquid level adjustment step, and the second speed may be lower
than the first speed.
[0018] According to an embodiment, the liquid supply step may
comprise a first supply step in which the substrate is rotated at a
first rotating speed and the processing liquid is supplied toward
the substrate at a first flow rate and a second supply step in
which the substrate is rotated at a second rotating speed and the
processing liquid is supplied toward the substrate at a second flow
rate. The first rotating speed may be higher than the second
rotating speed, and the first flow rate may be greater than the
second flow rate.
[0019] According to an embodiment, in the liquid processing step, a
central nozzle and an edge nozzle may simultaneously supply the
processing liquid onto the substrate. The central nozzle may supply
the processing liquid onto the central region of the rotating
substrate, and the edge nozzle may supply the processing liquid
onto the edge region of the rotating substrate. A flow rate of the
processing liquid supplied by the edge nozzle may be greater than a
flow rate of the processing liquid supplied by the central
nozzle.
[0020] According to an embodiment, in the liquid processing step,
the processing liquid may be supplied onto the rotating substrate
through a liquid supply nozzle. A dispensing location of the
processing liquid supplied from the liquid supply nozzle may be
moved between the central region and the edge region of the
substrate. A flow rate of the processing liquid supplied onto the
edge region of the substrate may be modified to be greater than a
flow rate of the processing liquid supplied onto the central region
of the substrate.
[0021] According to an embodiment, in the liquid processing step,
the substrate may be processed by sequentially supplying a first
liquid, a second liquid, and a third liquid onto the substrate, and
the processing liquid may be the third liquid. In the drying step,
the substrate may be dried using a supercritical fluid. The third
liquid may dissolve better in the supercritical fluid than the
second fluid.
[0022] According to an embodiment, the third liquid may comprise
isopropyl alcohol, and the supercritical fluid may be carbon
dioxide.
[0023] According to an embodiment, the substrate may be transferred
into the drying chamber, with the processing liquid remaining on
the substrate.
[0024] According to an embodiment, the first liquid may be an
etching fluid, and the second liquid may neutralize the first
liquid and may dissolve better in the third liquid than the first
liquid.
[0025] According to an embodiment, the height of the processing
liquid on the edge region of the substrate may be higher than the
height of the processing liquid on the central region of the
substrate when the substrate is transferred into the drying
chamber.
[0026] According to an embodiment, the second speed may range from
10 RPM to 100 RPM.
[0027] According to an embodiment, the first speed may be 200 RPM
or more.
[0028] According to another aspect of an embodiment, an apparatus
for processing a substrate comprises a liquid processing chamber
that performs liquid processing on the substrate by supplying a
processing liquid onto the substrate, a drying chamber that removes
the processing liquid from the substrate, a transfer unit that
transfers the substrate between the liquid processing chamber and
the drying chamber, and a controller that controls the liquid
processing chamber, the drying chamber, and the transfer unit. The
liquid processing chamber comprises a cup having a processing space
inside, a support unit that supports and rotate the substrate in
the processing space, and a liquid supply unit that supplies the
processing liquid onto the substrate. The drying chamber comprises
a body having an inner space inside, a support that supports an
edge region of the substrate in the inner space, a fluid supply
unit that supplies a fluid for drying into the inner space, and an
exhaust unit that exhausts the fluid in the inner space. The
controller controls the liquid processing chamber, the drying
chamber, and the transfer unit to sequentially perform a liquid
processing step of performing liquid processing on the substrate by
supplying the processing liquid onto the substrate in the liquid
processing chamber, a transfer step of transferring the substrate
from the liquid processing chamber to the drying chamber, and a
drying step of drying the substrate in the drying chamber and to
allow a height of the processing liquid remaining on the edge
region of the substrate to be higher than a height of the
processing liquid remaining on a central region of the substrate
when the liquid processing is completed in the liquid processing
chamber in the liquid processing step.
[0029] According to an embodiment, the controller may control the
liquid processing chamber such that the liquid processing step
comprises a liquid supply step in which the substrate is rotated
and the processing liquid is supplied toward the substrate and a
liquid level adjustment step in which the substrate is rotated and
the supply of the processing liquid is stopped after the liquid
supply step.
[0030] According to an embodiment, the controller may control the
liquid processing chamber such that a rotating speed of the
substrate in the liquid supply step is higher than a rotating speed
of the substrate in the liquid level adjustment step.
[0031] According to an embodiment, the liquid supply unit may
comprise a central nozzle that supplies the processing liquid onto
the central region of the substrate and an edge nozzle that
supplies the processing liquid onto the edge region of the
substrate. The controller may control the liquid processing chamber
such that in the liquid supply step, the edge nozzle supplies the
processing liquid onto the edge region of the rotating substrate at
the same time that the central nozzle supplies the processing
liquid onto the central region of the rotating substrate, and a
flow rate of the processing liquid supplied by the edge nozzle is
greater than a flow rate of the processing liquid supplied by the
central nozzle.
[0032] According to an embodiment, in the liquid processing step,
the substrate may be processed by sequentially supplying a first
liquid, a second liquid, and a third liquid onto the substrate, and
the processing liquid may be the third liquid. In the drying step,
the substrate may be dried using a supercritical fluid. The third
liquid may dissolve better in the supercritical fluid than the
second fluid. The substrate may be transferred into the drying
chamber, with the processing liquid remaining on the substrate.
[0033] According to another aspect of an embodiment, a method for
processing a substrate comprises a liquid processing process of
performing liquid processing on the substrate by supplying a
processing liquid onto the substrate in a liquid processing
chamber, a liquid level adjustment process of adjusting a level of
the processing liquid remaining on the substrate after the liquid
processing process, and a drying process of removing the processing
liquid from the substrate. The liquid level adjustment process is
performed by rotating the substrate while the supply of the
processing liquid onto the substrate is stopped.
[0034] According to an embodiment, in the liquid level adjustment
process, the level of the processing liquid remaining on the
substrate may be adjusted by controlling a rotating speed of the
substrate.
[0035] According to an embodiment, the rotating speed of the
substrate in the liquid level adjustment process may be a first set
speed when the level of the processing liquid on the substrate that
is set before the drying process is a first level, and the rotating
speed of the substrate in the liquid level adjustment process may
be a second set speed when the level of the processing liquid on
the substrate that is set before the drying process is a second
level. The first level may be higher than the second level, and the
first set speed may be lower than the second set speed.
[0036] According to an embodiment, the liquid processing process
and the liquid level adjustment process may be performed in the
liquid processing chamber, and the drying process may be performed
in a drying chamber. The substrate on which the liquid level
adjustment process is completely performed in the liquid processing
chamber may be transferred into the drying chamber by a transfer
robot.
[0037] According to an embodiment, the rotating speed of the
substrate in the liquid level adjustment process may be lower than
that of the substrate in the liquid processing process.
[0038] According to an embodiment, in the liquid processing
process, the substrate may be processed by sequentially supplying a
first liquid, a second liquid, and a third liquid onto the
substrate, and the processing liquid may be the third liquid. In
the drying step, the substrate may be dried using a supercritical
fluid. The third liquid may dissolve better in the supercritical
fluid than the second fluid.
[0039] According to an embodiment, a height of the processing
liquid on an edge region of the substrate may be higher than a
height of the processing liquid on a central region of the
substrate when the substrate is transferred into the drying
chamber.
[0040] According to an embodiment of the inventive concept, drying
efficiency may be improved when a substrate is dried using a
supercritical fluid.
[0041] Furthermore, according to an embodiment of the inventive
concept, an edge region of a substrate may be prevented from being
naturally dried when the substrate is dried.
[0042] Moreover, according to an embodiment of the inventive
concept, it is possible to prevent a large amount of time from
being taken to remove a processing liquid when drying a
substrate.
[0043] In addition, according to an embodiment of the inventive
concept, a level of a processing liquid remaining on a substrate
when the substrate is transferred into a drying chamber from a
liquid processing chamber may be set to a set level, thereby
improving drying efficiency.
[0044] Effects of the inventive concept are not limited to the
above-described effects, and any other effects not mentioned herein
may be clearly understood from this specification and the
accompanying drawings by those skilled in the art to which the
inventive concept pertains.
BRIEF DESCRIPTION OF THE FIGURES
[0045] The above and other objects and features will become
apparent from the following description with reference to the
following figures, wherein like reference numerals refer to like
parts throughout the various figures unless otherwise specified,
and wherein:
[0046] FIG. 1 is a schematic plan view illustrating a substrate
processing apparatus according to an embodiment of the inventive
concept;
[0047] FIG. 2 is a schematic view illustrating a liquid processing
chamber of FIG. 1 according to an embodiment of the inventive
concept;
[0048] FIG. 3 is a schematic view illustrating a drying chamber of
FIG. 1 according to an embodiment of the inventive concept;
[0049] FIG. 4 is a flowchart illustrating a substrate processing
method according to an embodiment of the inventive concept;
[0050] FIGS. 5 and 6 are views illustrating processing of a
substrate in a liquid supply step and a liquid level adjustment
step, respectively;
[0051] FIG. 7 is a view illustrating an example of a rotating speed
of the substrate in the liquid supply step;
[0052] FIGS. 8 to 11 are views illustrating a variation in the
height of a processing liquid on a substrate in a liquid supply
step, a liquid level adjustment step, a transfer step, and a drying
step, respectively;
[0053] FIGS. 12 to 15 are views illustrating various modified
examples of supplying a processing liquid onto a substrate in the
liquid processing chamber;
[0054] FIG. 16 is a view illustrating a correlation between a
rotating speed of a substrate in a liquid level adjustment process
and the weight of a processing liquid remaining on the substrate
after adjustment of a liquid level;
[0055] FIG. 17 is a view illustrating a general drying chamber for
drying a substrate using a supercritical fluid;
[0056] FIG. 18 is a view illustrating a leaning phenomenon that
arises on a substrate during natural drying; and
[0057] FIG. 19 is a view illustrating a state of a processing
liquid on a substrate when a drying process is performed in the
apparatus of FIG. 17.
DETAILED DESCRIPTION
[0058] Hereinafter, embodiments of the inventive concept will be
described in more detail with reference to the accompanying
drawings. The inventive concept may, however, be embodied in
different forms and should not be constructed as limited to the
embodiments set forth herein. Rather, these embodiments are
provided so that this disclosure will be thorough and complete, and
will fully convey the scope of the inventive concept to those
skilled in the art. In the drawings, the dimensions of elements are
exaggerated for clarity of illustration.
[0059] FIG. 1 is a schematic plan view illustrating a substrate
processing apparatus according to an embodiment of the inventive
concept.
[0060] Referring to FIG. 1, the substrate processing apparatus may
comprise an index module 10, a processing module 20, and a
controller(not shown). According to an embodiment, the index module
10 and the processing module 20 may be arranged in one direction.
Hereinafter, the direction in which the index module 10 and the
processing module 20 are arranged may be referred to as a first
direction 92, a direction perpendicular to the first direction 92
when viewed from above may be referred to as a second direction 94,
and a direction perpendicular to both the first direction 92 and
the second direction 94 may be referred to as a third direction
96.
[0061] The index module 10 may transfer substrates W in containers
80 to the processing module 20 and may place the substrates W
completely processed in the processing module 20 in the containers
80. The longitudinal direction of the index module 10 may be
oriented in the second direction 94. The index module 10 may have a
plurality of load ports 12 and an index frame 14. The load ports 12
may be located on the opposite side to the processing module 20
with respect to the index frame 14. The containers 80 having the
substrates W received therein may be placed on the load ports 12.
The plurality of load ports 12 may be arranged along the second
direction 94.
[0062] Airtight containers, such as front open unified pods
(FOUPs), may be used as the containers 80. The containers 80 may be
placed on the load ports 12 by a transfer means (not illustrated),
such as an overhead transfer, an overhead conveyor, or an automatic
guided vehicle, or a worker.
[0063] The index frame 14 may have an index robot 120 inside. A
guide rail 140 may be provided in the index frame 14. The
longitudinal direction of the guide rail 140 may be oriented in the
second direction 94. The index robot 120 may be provided on the
guide rail 140 so as to be movable along the guide rail 140. The
index robot 120 may comprise a plurality of hands 122 on which the
substrates W are placed. The hands 122 may move forward or
backward, may rotate about an axis oriented in the third direction
96, or may move along the third direction 96. The plurality of
hands 122 may be spaced apart from each other in the vertical
direction and may independently move forward or backward.
[0064] The processing module 20 may comprise a buffer unit 200, a
transfer chamber 300, liquid processing chambers 400, and drying
chambers 500. The buffer unit 200 may provide a space in which
substrates W to be loaded into the processing module 20 and
substrates W unloaded from the processing module 20 temporarily
stay. The liquid processing chambers 400 may perform liquid
processing on a substrate W by supplying a liquid onto the
substrate W. The drying chambers 500 may remove the liquid
remaining on the substrate W. The transfer chamber 300 transfers
substrates W between the buffer unit 200, the liquid processing
chambers 400, and the drying chambers 500.
[0065] The transfer chamber 300 may be arranged such that the
longitudinal direction thereof is oriented in the first direction
92. The buffer unit 200 may be disposed between the index module 10
and the transfer chamber 300. The liquid processing chambers 400
and the drying chambers 500 may be disposed on lateral sides of the
transfer chamber 300. The liquid processing chambers 400 and the
transfer chamber 300 may be arranged along the second direction 94.
The drying chambers 500 and the transfer chamber 300 may be
arranged along the second direction 94. The buffer unit 200 may be
located at one end of the transfer chamber 300.
[0066] According to an embodiment, the liquid processing chambers
400 may be disposed on the opposite lateral sides of the transfer
chamber 300. The drying chambers 500 may be disposed on the
opposite lateral sides of the transfer chamber 300. The liquid
processing chambers 400 may be disposed to be closer to the buffer
unit 200 than the drying chambers 500. The liquid processing
chambers 400 may be arranged in an A.times.B array (A and B being
natural numbers of 1 or larger) on one lateral side of the transfer
chamber 300 along the first and third directions 92 and 96.
Furthermore, the drying chambers 500 may be arranged in a C.times.D
array (C and D being natural numbers of 1 or larger) on the one
lateral side of the transfer chamber 300 along the first and third
directions 92 and 96. Alternatively, only the liquid processing
chambers 400 may be arranged on the one lateral side of the
transfer chamber 300, and the drying chambers 500 may be arranged
on the opposite lateral side of the transfer chamber 300.
[0067] The transfer chamber 300 may have a transfer robot 320
inside. A guide rail 340 may be provided in the transfer chamber
300. The longitudinal direction of the guide rail 340 may be
oriented in the first direction 92. The transfer robot 320 may be
provided on the guide rail 340 so as to be movable along the guide
rail 340. The transfer robot 320 may comprise a plurality of hands
322 on which substrates W are placed. The hands 322 may move
forward or backward, may rotate about an axis oriented in the third
direction 96, or may move along the third direction 96. The
plurality of hands 322 may be spaced apart from each other in the
vertical direction and may independently move forward or
backward.
[0068] The buffer unit 200 may comprise a plurality of buffers 220
in which substrates W are placed. The buffers 220 may be spaced
apart from each other along the third direction 96. The buffer unit
200 may be open at the front side and the rear side thereof. The
front side may face the index module 10, and the rear side may face
the transfer chamber 300. The index robot 120 may approach the
buffer unit 200 through the open front side thereof, and the
transfer robot 320 may approach the buffer unit 200 through the
open rear side thereof
[0069] FIG. 2 is a schematic view illustrating the liquid
processing chamber 400 of FIG. 1 according to an embodiment of the
inventive concept. Referring to FIG. 2, the liquid processing
chamber 400 may have a housing 410, a cup 420, a support unit 440,
a liquid supply unit 460, and a lifting unit 480. The housing 410
may have a substantially rectangular parallelepiped shape. The cup
420, the support unit 440, and the liquid supply unit 460 may be
disposed inside the housing 410.
[0070] The cup 420 may have a processing space that is open at the
top, and a substrate W may be processed with liquids in the
processing space. The support unit 440 may support the substrate W
in the processing space. The liquid supply unit 460 may supply the
liquids onto the substrate W supported on the support unit 440. The
liquids may be sequentially supplied onto the substrate W. The
lifting unit 480 may adjust the height of the cup 420 relative to
the support unit 440.
[0071] According to an embodiment, the cup 420 may have a plurality
of collection bowls 422, 424, and 426. The collection bowls 422,
424, and 426 may have collection spaces for collecting the liquids
used to process the substrate W, respectively. Each of the
collection bowls 422, 424, and 426 may have a ring shape
surrounding the support unit 440. The processing liquids scattered
by rotation of the substrate W during liquid processing may be
introduced into the collection spaces through inlets 422a, 424a,
and 426a of the respective collection bowls 422, 424, and 426.
According to an embodiment, the cup 420 may have the first
collection bowl 422, the second collection bowl 424, and the third
collection bowl 426. The first collection bowl 422 may be disposed
to surround the support unit 440, the second collection bowl 424
may be disposed to surround the first collection bowl 422, and the
third collection bowl 426 may be disposed to surround the second
collection bowl 424. The second inlet 424a through which a liquid
is introduced into the second collection bowl 424 may be located
above the first inlet 422a through which a liquid is introduced
into the first collection bowl 422. The third inlet 426a through
which a liquid is introduced into the third collection bowl 426 may
be located above the second inlet 424a.
[0072] The support unit 440 may have a support plate 442 and a
driving shaft 444. The top side of the support plate 442 may have a
substantially circular shape and may have a larger diameter than
the substrate W. Support pins 442a may be provided on the central
portion of the support plate 442 to support the bottom side of the
substrate W. The support pins 442a may protrude upward from the
support plate 442 such that the substrate W is spaced apart from
the support plate 442 by a predetermined distance. Chuck pins 442b
may be provided on the edge portion of the support plate 442. The
chuck pins 442b may protrude upward from the support plate 442 and
may support the lateral portion of the substrate W to prevent the
substrate W from being separated from the support unit 440 when
being rotated. The driving shaft 444 may be driven by an actuator
446. The driving shaft 444 may be connected to the center of the
bottom side of the support plate 442 and may allow the support
plate 442 to rotate about its axis.
[0073] According to an embodiment, the liquid supply unit 460 may
have a first nozzle 462, a second nozzle 464, and a third nozzle
466. The first nozzle 462 may supply a first liquid onto the
substrate W. The first liquid may be a liquid for removing a film
or foreign matter remaining on the substrate W. The second nozzle
464 may supply a second liquid onto the substrate W. The second
liquid may be a liquid that dissolves well in a third liquid. For
example, the second liquid may be a liquid that dissolves better in
the third liquid than the first liquid. The second liquid may be a
liquid that neutralizes the first liquid supplied onto the
substrate W. Furthermore, the second liquid may be a liquid that
neutralizes the first liquid and dissolves better in the third
liquid than the first liquid. According to an embodiment, the
second liquid may be water. The third nozzle 466 may supply the
third liquid onto the substrate W. The third liquid may be a liquid
that dissolves well in a supercritical fluid that is used in the
drying chambers 500. For example, the third liquid may be a liquid
that dissolves better in the supercritical fluid used in the drying
chambers 500 than the second liquid. According to an embodiment,
the third liquid may be an organic solvent. The organic solvent may
be isopropyl alcohol. The first nozzle 462, the second nozzle 464,
and the third nozzle 466 may be supported by different arms 461.
The arms 461 may be independently moved. Alternatively, the first
nozzle 462, the second nozzle 464, and the third nozzle 466 may be
mounted on and simultaneously moved by the same arm.
[0074] The lifting unit 480 may vertically move the cup 420. The
height of the cup 420 relative to the substrate W may be modified
by the vertical movement of the cup 420. Accordingly, the
collection bowls 422, 424, and 426 for collecting the processing
liquids may be changed depending on the types of liquids supplied
onto the substrate W, thereby separately collecting the liquids.
Alternatively, the cup 420 may be fixed, and the lifting unit 480
may vertically move the support unit 440.
[0075] FIG. 3 is a schematic view illustrating the drying chamber
500 of FIG. 1 according to an embodiment of the inventive concept.
According to an embodiment, the drying chamber 500 may remove a
liquid on a substrate W using a supercritical fluid. The drying
chamber 500 may have a body 520, a support 540, a fluid supply unit
560, and a blocking plate 580.
[0076] The body 520 may have an inner space 502 in which a drying
process is performed. The body 520 may have an upper body 522 and a
lower body 524. The upper body 522 and the lower body 524 may be
combined together to provide the above-described inner space 502.
The upper body 522 may be provided above the lower body 524. The
upper body 522 may be fixed in one position, and the lower body 524
may be vertically moved by a driving member 590 such as a cylinder.
When the lower body 524 is separated from the upper body 522, the
inner space 502 may be opened, and the substrate W may be placed in
or retrieved from the inner space 502. During the drying process,
the lower body 524 may be brought into close contact with the upper
body 522, and therefore the inner space 502 may be hermetically
sealed from the outside. The drying chamber 500 may have a heater
570. According to an embodiment, the heater 570 may be located in a
wall of the body 520. The heater 570 may heat the inner space 502
of the body 520 such that a fluid supplied into the inner space 502
of the body 520 is maintained in a supercritical state.
[0077] The support 540 may support the substrate W in the inner
space 502 of the body 520. The support 540 may have fixed rods 542
and support parts 544. The fixed rods 542 may be fixedly installed
on the upper body 522 to protrude downward from the bottom side of
the upper body 522. The longitudinal direction of the fixed rods
542 may be oriented in the vertical direction. The plurality of
fixed rods 542 may be spaced apart from each other. The fixed rods
542 may be arranged such that the substrate W does not interfere
with the fixed rods 542 when being placed in or retrieved from the
space surrounded by the fixed rods 542. The support parts 544 may
be coupled to the respective fixed rods 542. The support parts 544
may extend from lower ends of the fixed rods 542 toward the space
surrounded by the fixed rods 542. Due to the above-described
structure, the edge region of the substrate W placed in the inner
space 502 of the body 520 may be placed on the support parts 544,
and the entire top side of the substrate W, the central region of
the bottom side of the substrate W, and part of the edge region of
the bottom side of the substrate W may be exposed to a fluid for
drying that is supplied into the inner space 502.
[0078] The fluid supply unit 560 may supply the fluid for drying
into the inner space 502 of the body 520. According to an
embodiment, the fluid for drying may be supplied into the inner
space 502 in a supercritical state. Alternatively, the fluid for
drying may be supplied into the inner space 502 in a gaseous state
and may experience a phase change into a supercritical state in the
inner space 502. According to an embodiment, the fluid supply unit
560 may have a main supply line 562, an upper branch line 564, and
a lower branch line 566. The upper branch line 564 and the lower
branch line 566 may branch from the main supply line 562. The upper
branch line 564 may be coupled to the upper body 522 and may supply
the fluid for drying from above the substrate W placed on the
support 540. According to an embodiment, the upper branch line 564
may be coupled to the center of the upper body 522. The lower
branch line 566 may be coupled to the lower body 524 and may supply
the fluid for drying from below the substrate W placed on the
support 540. According to an embodiment, the lower branch line 566
may be coupled to the center of the lower body 524. An exhaust line
550 may be coupled to the lower body 524. The supercritical fluid
in the inner space 502 of the body 520 may be exhausted outside the
body 520 through the exhaust line 550.
[0079] The blocking plate 580 may be disposed in the inner space
502 of the body 520. The blocking plate 580 may have a circular
plate shape. The blocking plate 580 may be supported by support
rods 582 so as to be spaced apart upward from the bottom of the
body 520. The plurality of support rods 582 may have a rod shape
and may be spaced apart from each other by a predetermined
distance. When viewed from above, the blocking plate 580 may be
superimposed on an outlet of the lower branch line 566 and an inlet
of the exhaust line 550. The blocking plate 580 may prevent the
fluid for drying, which is supplied through the lower branch line
566, from being directly sprayed toward the substrate W to damage
the substrate W.
[0080] The controller (not shown) may control the transfer robot
320, the liquid processing chambers 400, and the drying chambers
500 to process substrates W by a preset substrate processing
method. Hereinafter, an example of the substrate processing method
will be described.
[0081] FIG. 4 is a flowchart illustrating a substrate processing
method according to an embodiment of the inventive concept.
Referring to FIG. 4, the substrate processing method may comprise
liquid processing step S100, transfer step S200, and drying step
S300.
[0082] Liquid processing step S100 may be performed in the liquid
processing chamber 400. In liquid processing step S100, liquids may
be supplied onto a substrate W to process the substrate W.
According to an embodiment, in liquid processing step S100, a first
liquid, a second liquid, and a third liquid may be sequentially
supplied onto the substrate W to process the substrate W. The first
liquid may be a chemical containing an acid or alkali, such as a
sulfuric acid, a nitric acid, a hydrochloric acid, or the like. The
second liquid may be pure water, and the third liquid may be
isopropyl alcohol. First, the chemical may be supplied onto the
substrate W to remove a thin film or foreign matter remaining on
the substrate W. Next, the pure water may be supplied onto the
substrate W, and the chemical on the substrate W may be replaced
with the pure water. Then, the isopropyl alcohol may be supplied
onto the substrate W, and the pure water on the substrate W may be
replaced with the isopropyl alcohol. Since the pure water dissolves
better in the isopropyl alcohol than the chemical, the pure water
may be easy to replace. Furthermore, the surface of the substrate W
may be neutralized by the pure water. Since the isopropyl alcohol
dissolves well in carbon dioxide used in the drying chamber 500,
the isopropyl alcohol may be easily removed by the carbon dioxide
in a supercritical state in the drying chamber 500.
[0083] Transfer step S200 may be performed by the transfer robot
320. After the liquid processing is completed in the liquid
processing chamber 400, transfer step S200 of transferring the
substrate W into the drying chamber 500 from the liquid processing
chamber 400 may be performed. While the substrate W is being
transferred by the transfer robot 320, a liquid may remain on the
substrate W. Hereinafter, the liquid remaining on the substrate W
during the transfer of the substrate W by the transfer robot 320
may be referred to as the processing liquid. In the above-described
embodiment, the processing liquid may be, for example, the third
liquid.
[0084] Drying step S300 may be performed in the drying chamber 500.
The substrate W transferred into the drying chamber 500 may be
supported by the support 540, with the edge region of the substrate
W placed on the support parts 544. Carbon dioxide may be supplied
into the inner space 502 of the body 520 through the lower branch
line 566. When the pressure inside the inner space 502 of the body
520 reaches a set pressure, carbon dioxide may be supplied into the
inner space 502 of the body 520 through the upper branch line 564.
Alternatively, when the pressure inside the inner space 502 of the
body 520 reaches the set pressure, carbon dioxide may be
simultaneously supplied into the inner space 502 of the body 520
through the upper branch line 564 and the lower branch line 566.
During the process, the carbon dioxide may be periodically supplied
into or discharged from the inner space 502 of the body 520 a
plurality of times. When a predetermined amount of the processing
liquid remaining on the substrate W is dissolved in the
supercritical carbon dioxide by the above-described method, the
carbon dioxide may be discharged from the inner space 502, and new
carbon dioxide may be supplied into the inner space 502, thereby
improving the rate of removal of the processing liquid from the
substrate W.
[0085] Next, a process of processing the substrate W with the
processing liquid in the liquid processing chamber 400 will be
described in detail. In an embodiment described below, the
processing liquid may be an organic solvent such as isopropyl
alcohol.
[0086] When liquid processing step S100 is completed in the liquid
processing chamber 400, the height of the processing liquid
remaining on the edge region of the substrate W may be higher than
the height of the processing liquid remaining on the central region
of the substrate W. According to an embodiment, liquid processing
step S100 may comprise liquid supply step S110 and liquid level
adjustment step S120.
[0087] FIGS. 5 and 6 are views illustrating processing of the
substrate W in liquid supply step S110 and liquid level adjustment
step S120, respectively.
[0088] Referring to FIG. 5, in liquid supply step S110, the
processing liquid may be supplied onto the substrate W. In liquid
supply step S110, the substrate W may be rotated at a first speed
of V1. The processing liquid may be supplied onto the central
region of the substrate W. For example, the processing liquid may
be supplied toward the center of the substrate W.
[0089] In liquid level adjustment step S120, the thickness of the
processing liquid supplied onto the substrate W may be adjusted.
According to an embodiment, in liquid level adjustment step S120,
the thickness of the processing liquid may be adjusted to vary
depending on regions on the substrate W. For example, the thickness
of the processing liquid may be adjusted such that the thickness of
the processing liquid on the edge region of the substrate W is
greater than the thickness of the processing liquid on the central
region of the substrate W. Referring to FIG. 6, in liquid level
adjustment step S120, the supply of the processing liquid onto the
substrate W may be stopped, and the substrate W may be rotated at a
second speed of V2. The thickness of the processing liquid may be
adjusted by controlling the second speed V2.
[0090] FIG. 7 is a view illustrating an example of a rotating speed
of the substrate W in liquid supply step S110. Referring to FIG. 7,
the second speed V2 in liquid level adjustment step S120 may be
lower than the first speed V1 in liquid supply step S110. The
second speed V2 appropriate for the thicknesses of the processing
liquid that are required for the edge region and the central region
of the substrate W may be determined by conducting a test by
modifying the RPM of the substrate W in liquid level adjustment
step S120. According to an embodiment, the first speed V1 in liquid
supply step S110 may be 200 RPM or more, and the second speed V2 in
liquid level adjustment step S120 may range from 10 RPM to 100 RPM.
When liquid level adjustment step S120 is completed, the rotation
of the substrate W may be stopped.
[0091] Hereinafter, a variation in the height of the processing
liquid on the substrate W in liquid supply step S110, liquid level
adjustment step S120, transfer step S200, and drying step S300 will
be described with reference to FIGS. 8 to 11. FIG. 8 is a view
illustrating an example of the thickness of the processing liquid
on the substrate W when liquid supply step S110 is completed, and
FIG. 9 is a view illustrating an example of the thickness of the
processing liquid on the substrate W when liquid level adjustment
step S120 is completed. FIG. 10 is a view illustrating an example
of the thickness of the processing liquid on the substrate W when
the substrate W is transferred into the drying chamber 500, and
FIG. 11 is a view illustrating an example of the thickness of the
processing liquid on the substrate W when the substrate W is placed
on the support 540 of the drying chamber 500.
[0092] When liquid supply step S110 is completed in FIG. 7, the
thickness h1 of the processing liquid on the entire region of the
substrate W may be substantially uniform as illustrated in FIG. 8,
or the thickness of the processing liquid on the central region of
the substrate W may be slightly greater than the thickness of the
processing liquid on the edge region of the substrate W.
Thereafter, when the substrate W is rotated at a relatively low
speed in liquid level adjustment step S120, the processing liquid
supplied onto the substrate W may remain in a large amount on the
edge region of the substrate W without being separated from the
substrate W by a centrifugal force. Accordingly, as illustrated in
FIG. 9, the height h2 of the processing liquid on the edge region
of the substrate W may be higher than the height h3 of the
processing liquid on the central region of the substrate W.
[0093] While the substrate W is being transferred by the transfer
robot 320, part of the processing liquid remaining on the edge
region of the substrate W, as illustrated in FIG. 10, may flow
toward the central region of the substrate W due to a restoring
force or surface tension. Therefore, immediately after the
substrate W is transferred into the drying chamber 500, the
difference in the height of the processing liquid between the edge
region and the central region of the substrate W may be smaller
than that in FIG. 9 although the height h4 of the processing liquid
on the edge region of the substrate W is maintained to be greater
than the height h5 of the processing liquid on the central region
of the substrate W.
[0094] Thereafter, when the substrate W is placed on the support
540 of the drying chamber 500, the substrate W, as illustrated in
FIG. 11, may sag in the middle, and part of the processing fluid on
the edge region of the substrate W may flow to the central region
of the substrate W. Furthermore, since the edge region of the
substrate W is placed on the heated support parts 544, part of the
processing liquid on the edge region of the substrate W may
evaporate. Due to this, the height h6 of the processing liquid on
the edge region of the substrate W may be maintained to be equal to
the height of the processing liquid on the central region of the
substrate W, or the difference in the height of the processing
liquid between the edge region and the central region of the
substrate W may be smaller than that in FIG. 9 or 10.
[0095] According to an embodiment of the inventive concept, since
liquid level adjustment step S120 of rotating the substrate W for a
predetermined period of time in the state in which the supply of
the processing liquid is stopped is performed after the completion
of liquid supply step S110, the thickness of the processing liquid
on the edge region of the substrate W may be made greater than the
thickness of the processing liquid on the central region of the
substrate W. Due to this, when the substrate W is transferred into
the drying chamber 500, the thickness of the processing liquid on
the edge region of the substrate W may be greater than the
thickness of the processing liquid on the central region of the
substrate W. Although the substrate W, when transferred into the
drying chamber 500 and placed on the support parts 544, sags in the
middle so that part of the processing liquid on the edge region of
the substrate W flows toward the central region thereof, the
processing liquid of a predetermined height may remain on the edge
region of the substrate W. Accordingly, the edge region of the
substrate W may be prevented from being naturally dried.
Furthermore, when the substrate W is placed on the support parts
544 in the drying chamber 500, the difference in the height of the
processing liquid between the edge region and the central region of
the substrate W may be reduced so that the entire region of the
substrate W may be uniformly dried by a supercritical fluid.
[0096] Next, various modified examples of supplying a processing
liquid onto a substrate in the liquid processing chamber 400 will
be described with reference to FIGS. 12 to 15.
[0097] FIG. 12 is a flowchart illustrating a substrate processing
method according to an embodiment of the inventive concept.
Referring to FIG. 12, a step of supplying a processing liquid onto
a substrate W may comprise liquid supply step S110, transfer step
S200, and drying step S300 as in the embodiment of FIG. 4. However,
liquid supply step S110 in the embodiment of the inventive concept
may comprise first supply step S112 and second supply step S114. In
first and second supply steps S112 and S114, the processing liquid
may be supplied onto the central region of the substrate W. For
example, the processing liquid may be supplied to the center of the
substrate W. In first supply step S112, the substrate W may be
rotated at a first rotating speed of V11, and the processing liquid
may be supplied onto the substrate W at a first flow rate of Q11.
In second supply step S114, the substrate W may be rotated at a
second rotating speed, and the processing liquid may be supplied
onto the substrate W at a second flow rate. The first rotating
speed may be higher than the second rotating speed. Furthermore,
the first flow rate may be greater than the second flow rate. In
addition, the first rotating speed may be higher than the second
rotating speed, and the first flow rate may be greater than the
second flow rate. Both the first rotating speed and the second
rotating speed may be higher than a second speed in liquid level
adjustment step S120.
[0098] FIGS. 13 and 14 are schematic views illustrating another
example of the substrate processing method. FIG. 13 illustrates a
first supply step, and FIG. 14 illustrates a second supply step.
Referring to FIGS. 13 and 14, a step of performing liquid
processing on a substrate W by using a processing liquid may
comprise a liquid supply step. In the liquid supply step, the
substrate W may be rotated, and the processing liquid may be
supplied onto the substrate W. The liquid supply step may comprise
the first supply step and the second supply step. The first supply
step and the second supply step may be sequentially performed.
Referring to FIG. 13, in the first supply step, the processing
liquid may be supplied onto the central region of the substrate W.
According to an embodiment, the processing liquid may be supplied
to the center of the substrate W. In the first supply step, the
processing liquid may be supplied at a first flow rate of Q11.
Referring to FIG. 14, in the second supply step, the processing
liquid may be supplied onto the edge region of the substrate W. In
the second supply step, the processing liquid may be supplied at a
second flow rate of Q12. According to an embodiment, the first flow
rate Q11 may be less than the second flow rate Q12. The rotating
speed of the substrate W in the first supply step may differ from
the rotating speed of the substrate W in the second supply step.
For example, the rotating speed of the substrate W in the second
supply step may be lower than the rotating speed of the substrate W
in the first supply step.
[0099] According to an embodiment, during the supply of the
processing fluid, the third nozzle 466 may be moved to modify the
location where the processing liquid is supplied onto the substrate
W. The location where the processing liquid is supplied may be
continuously shifted from the center of the substrate W to an end
portion thereof. Alternatively, the location where the processing
liquid is supplied may be fixed in a specific position of the
central region of the substrate W and may then be fixed in a
specific position of the edge region of the substrate W. When the
substrate W is completely processed with the processing liquid by
the above-described method, the thickness of the processing liquid
on the edge region of the substrate W may be maintained to be
greater than the thickness of the processing liquid on the central
region of the substrate W. The flow rates of the processing fluid
supplied onto the central region and the edge region of the
substrate W may be determined to be appropriate for the thicknesses
of the processing liquid that are required for the central region
and the edge region of the substrate W, by conducting a test by
modifying the flow rate of the processing liquid in each
region.
[0100] FIG. 15 is a schematic view illustrating another example of
the substrate processing method. Referring to FIG. 15, the third
nozzle 466 for supplying a processing liquid onto a substrate W may
comprise a central nozzle 466a and an edge nozzle 466b. The central
nozzle 466a may supply the processing liquid onto the central
region of the substrate W, and the edge nozzle 466b may supply the
processing liquid onto the edge region of the substrate W. The
central nozzle 466a and the edge nozzle 466b may be mounted on the
arm 461 and may be operated together. Alternatively, the central
nozzle 466a and the edge nozzle 466b may be mounted on different
arms 461 and may be separately operated. Referring to FIG. 15, a
step of performing liquid processing on the substrate W by using
the processing liquid may comprise a liquid supply step. In the
liquid supply step, the substrate W may be rotated, and the
processing liquid may be supplied onto the substrate W. In the
liquid supply step, the processing liquid may be simultaneously
supplied onto the substrate W through the central nozzle 466a and
the edge nozzle 466b. The flow rate Q22 of the processing liquid
supplied by the edge nozzle 466b may be greater than the flow rate
Q21 of the processing liquid supplied by the central nozzle 466a.
When the substrate W is completely processed with the processing
liquid by the above-described method, the thickness of the
processing liquid on the edge region of the substrate W may be
maintained to be greater than the thickness of the processing
liquid on the central region of the substrate W. The flow rates of
the processing fluid supplied onto the central region and the edge
region of the substrate W may be determined to be appropriate for
the thicknesses of the processing liquid that are required for the
central region and the edge region of the substrate W, by
conducting a test by modifying the flow rates of the processing
liquid supplied by the central nozzle 466a and the edge nozzle
466b.
[0101] In the embodiment of FIGS. 13 and 14 and the embodiment of
FIG. 15, the thicknesses of the processing liquid on the central
region and the edge region of the substrate W may be adjusted by
only the liquid supply step without a step of stopping the supply
of the processing liquid. In the embodiment of FIGS. 13 and 14 and
the embodiment of FIG. 15, a step of stopping the supply of the
processing liquid and rotating the substrate W may be additionally
performed after the liquid supply step.
[0102] According to another embodiment of the inventive concept, a
substrate processing method may comprise liquid processing process
S500, liquid level adjustment process S600, and a drying
process.
[0103] In liquid processing process S500, liquids may be supplied
onto a substrate W to process the substrate W. According to an
embodiment, in liquid processing process S500, a first liquid, a
second liquid, and a third liquid may be sequentially supplied onto
the rotating substrate W to process the substrate W. The first to
third liquids may be the same type as those in the above-described
embodiments. In the embodiment of the inventive concept, the third
liquid may be a liquid that is last supplied onto the substrate W
in liquid processing process S500, and a processing liquid may
correspond to the third liquid.
[0104] Liquid level adjustment process S600 may be performed after
liquid processing process S500 is completed. In liquid level
adjustment process S600, the level of the processing liquid
remaining on the substrate W may be adjusted. In liquid level
adjustment process S600, the substrate W may be rotated in the
state in which the supply of the processing liquid onto the
substrate W is stopped. In liquid level adjustment process S600,
the level of the processing liquid remaining on the substrate W may
be adjusted by controlling the rotating speed of the substrate
W.
[0105] FIG. 16 is a view illustrating a correlation between the
rotating speed of the substrate W in the liquid level adjustment
process and the weight of the processing liquid remaining on the
substrate W after the adjustment of the liquid level. Referring to
FIG. 16, the weight of the processing liquid on the substrate W was
measured by changing the rotating speed of the substrate W to V21,
V22, and V23 in liquid level adjustment process S600, and the
weight of the processing liquid on the substrate W was measured to
be a, b, and c. The rotating speed of the substrate W was reduced
in the order of V21, V22, and V23, and the measured weight of the
processing liquid was increased in the order a, b, and c.
[0106] According to the embodiment of the inventive concept, the
rotating speed of the substrate W in liquid level adjustment
process S600 may be set to a first set speed in the case where the
level of the processing liquid remaining on the substrate W before
the drying process is set to a first level, and may be set to a
second set speed in the case where the level of the processing
liquid remaining on the substrate W before the drying process is
set to a second level. When the first level is higher than the
second level, the first set speed may be lower than the second set
speed. The rotating speed of the substrate W may be determined such
that the level of the processing liquid remaining on the substrate
W after liquid processing process S500 reaches a preset level, by
conducting a test by changing the RPM of the substrate W in liquid
level adjustment process S600.
[0107] The drying process may be performed after liquid level
adjustment process S600 is completed. In the drying process, the
processing liquid remaining on the substrate W may be removed.
[0108] According to the embodiment of the inventive concept, liquid
processing process S500 may be performed in the liquid processing
chamber 400 of FIG. 1, and the drying process may be performed in
the drying chamber 500. The liquid processing chamber 400 and the
drying chamber 500 may be provided in the same manner as described
above with regard to the embodiments, and the substrate W on which
liquid processing process S500 is completely performed in the
liquid processing chamber 400 may be transferred into the drying
chamber 500 by the transfer robot 320. In the embodiment of the
inventive concept, the drying chamber 500 may have a structure that
supports the entire bottom side of the substrate W. Alternatively,
the drying chamber 500 may support only the central region of the
substrate W. In another case, the drying chamber 500 may support
the substrate W in various ways. A fluid for drying that is used in
the drying chamber 500 may be the same as those in the
above-described embodiments.
[0109] While the inventive concept has been described with
reference to embodiments, it will be apparent to those skilled in
the art that various changes and modifications may be made without
departing from the spirit and scope of the inventive concept.
Therefore, it should be understood that the above embodiments are
not limiting, but illustrative.
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