U.S. patent application number 15/818673 was filed with the patent office on 2019-04-25 for semiconductor structure and the method of making the same.
The applicant listed for this patent is UNITED MICROELECTRONICS CORP.. Invention is credited to Hsiao-Pang Chou, Chao-Ching Hsieh, Chih-Chien Liu, Yu-Ru Yang.
Application Number | 20190123104 15/818673 |
Document ID | / |
Family ID | 66170068 |
Filed Date | 2019-04-25 |
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United States Patent
Application |
20190123104 |
Kind Code |
A1 |
Yang; Yu-Ru ; et
al. |
April 25, 2019 |
SEMICONDUCTOR STRUCTURE AND THE METHOD OF MAKING THE SAME
Abstract
The present invention provides a semiconductor structure, the
semiconductor structure includes a fin transistor (fin filed effect
transistor, finFET) located on a substrate, the fin transistor
includes a gate structure crossing over a fin structure, and at
least one source/drain region. And a resistive random access memory
(RRAM) includes a lower electrode, a resistance switching layer and
a top electrode being sequentially located on the source/drain
region and electrically connected to the fin transistor.
Inventors: |
Yang; Yu-Ru; (Hsinchu
County, TW) ; Liu; Chih-Chien; (Taipei City, TW)
; Hsieh; Chao-Ching; (Tainan City, TW) ; Chou;
Hsiao-Pang; (Taipei City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
UNITED MICROELECTRONICS CORP. |
Hsin-Chu City |
|
TW |
|
|
Family ID: |
66170068 |
Appl. No.: |
15/818673 |
Filed: |
November 20, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 45/146 20130101;
H01L 45/1683 20130101; H01L 29/66795 20130101; H01L 45/04 20130101;
H01L 27/2436 20130101; H01L 29/517 20130101; H01L 29/785 20130101;
H01L 45/122 20130101; H01L 29/7851 20130101; H01L 45/085 20130101;
H01L 45/1233 20130101; H01L 45/1253 20130101; H01L 29/0847
20130101 |
International
Class: |
H01L 27/24 20060101
H01L027/24; H01L 45/00 20060101 H01L045/00; H01L 29/78 20060101
H01L029/78; H01L 29/08 20060101 H01L029/08; H01L 29/51 20060101
H01L029/51; H01L 29/66 20060101 H01L029/66 |
Foreign Application Data
Date |
Code |
Application Number |
Oct 20, 2017 |
CN |
201710998624.0 |
Claims
1. A semiconductor structure comprising: a fin transistor (fin
filed effect transistor, fin-FET) located on a substrate, wherein
the fin transistor comprising a gate structure crossing over a fin
structure, and at least one source/drain region; and a resistive
random access memory (RRAM) comprising a lower electrode, a
resistive switching layer and an upper electrode sequentially
located on the source/drain region and electrically connected to
the fin transistor, wherein the lower electrode of the RRAM
contacts a top surface and two sidewalls of the fin structure
directly.
2. The semiconductor structure of claim 1, wherein the source/drain
region has a flat top surface.
3. The semiconductor structure of claim 1, wherein the fin
structure comprises an epitaxial region, the source/drain region is
located in the epitaxial region, and the resistive random access
memory crosses over the epitaxial region.
4. The semiconductor structure of claim 3, wherein the resistive
random access memory directly contacts a portion of the epitaxial
region.
5. The semiconductor structure of claim 3, wherein the epitaxial
region has a non-planar top surface.
6. The semiconductor structure of claim 3, wherein the epitaxial
region has at least one upper inclined surface on the [111] plane,
and at least one lower inclined surface on the [111] plane.
7. The semiconductor structure of claim 3, wherein the epitaxial
region has a polygonal cross-sectional structure.
8. The semiconductor structure of claim 1, further comprising a
dielectric layer disposed on the substrate, and the dielectric
layer includes a contact hole disposed therein, the contact hole
exposes a portion of the fin structure.
9. The semiconductor structure of claim 8, wherein the resistive
random access memory is located in the contact hole.
10. The semiconductor structure of claim 8, wherein the fin
structure comprises an epitaxial region, and the contact hole
exposes a portion of the epitaxial region.
11. The semiconductor structure of claim 10, wherein the resistive
random access memory is located in the contact hole.
12. The semiconductor structure of claim 1, wherein the resistive
random access memory directly contacts the source/drain region.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] Embodiments of the invention generally relate to a
semiconductor structure, and more particularly, to a fin transistor
(fin filed effect transistor, fin-FET) and a resistive random
access memory (hereinafter abbreviated as RRAM) structure and the
manufacturing method thereof.
2. Description of the Prior Art
[0002] Resistive random access memory (RRAM) has a simple
structure, low operating voltage, high-speed, good endurance, and
CMOS process compatibility. RRAM is the most promising alternative
to provide a downsized replacement for traditional flash memory.
RRAM is finding wide application in devices such as optical disks
and non-volatile memory arrays.
[0003] An RRAM cell stores data within a layer of material that can
be induced to undergo a phase change. The phase change can be
induced within all or part of the layer to switch between a high
resistance state and a low resistance state. The resistance state
can be queried and interpreted as representing either a "0" or a
"1". In a typical RRAM cell, the data storage layer includes an
amorphous metal oxide. Upon application of a sufficient voltage, a
metallic bridge is induced to form across the data storage layer,
which results in the low resistance state. The metallic bridge can
be disrupted and the high resistance state restored by applying a
short high current density pulse that melts or otherwise breaks
down all or part of the metallic structure. The data storage layer
quickly cools and remains in the high resistance state until the
low resistance state is induced again.
SUMMARY OF THE INVENTION
[0004] The present invention provides a semiconductor structure,
the semiconductor structure includes a fin transistor (fin filed
effect transistor, fin-FET) located on a substrate, wherein the fin
transistor comprising a gate structure crossing over a fin
structure, and at least one source/drain region, and a resistive
random access memory (RRAM) comprising a lower electrode, a
resistive switching layer and an upper electrode sequentially
located on the source/drain region and electrically connected to
the fin transistor.
[0005] The present invention is characterized in that a fin
transistor and a RRAM are combined with each other, and in
particular, the RRAM is directly fabricated on the fin structure or
on the epitaxial layer of the fin transistor, electrically
connected to the source/drain regions of the fin transistor. Since
the fin transistor has three-dimensional structure, the overall
size of the semiconductor device can be reduced by integrating the
RRAM and the fin transistor.
[0006] These and other objectives of the present invention will no
doubt become obvious to those of ordinary skill in the art after
reading the following detailed description of the preferred
embodiment that is illustrated in the various figures and
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 illustrates the schematic diagram of a semiconductor
structure according to the first preferred embodiment of the
present invention.
[0008] FIG. 2 is a schematic cross-section diagram along the
cross-section line A-A' in FIG. 1.
[0009] FIG. 3 illustrates the schematic diagram of a semiconductor
structure according to the second preferred embodiment of the
present invention.
[0010] FIG. 4 and FIG. 5 illustrate the schematic diagrams of a
semiconductor structure according to the third preferred embodiment
of the present invention.
[0011] FIG. 6 illustrates the schematic diagram of a semiconductor
structure according to the fourth preferred embodiment of the
present invention.
[0012] FIG. 7 illustrates the schematic diagram of a semiconductor
structure of the first preferred embodiment of the present
invention connecting to slot contact structures.
DETAILED DESCRIPTION
[0013] To provide a better understanding of the present invention
to users skilled in the technology of the present invention,
preferred embodiments are detailed as follows. The preferred
embodiments of the present invention are illustrated in the
accompanying drawings with numbered elements to clarify the
contents and the effects to be achieved.
[0014] Please note that the figures are only for illustration and
the figures may not be to scale. The scale may be further modified
according to different design considerations. When referring to the
words "up" or "down" that describe the relationship between
components in the text, it is well known in the art and should be
clearly understood that these words refer to relative positions
that can be inverted to obtain a similar structure, and these
structures should therefore not be precluded from the scope of the
claims in the present invention.
[0015] FIG. 1 shows a schematic diagram of a semiconductor
structure according to a first preferred embodiment of the present
invention, FIG. 2 is a schematic cross-section diagram along the
cross-section line A-A' in FIG. 1. As shown in FIG. 1. A
semiconductor device having a substrate 10 and a plurality of fin
structures 12 disposed thereon is provided. The main surface 10a of
the substrate may have a specific orientation and the long axial
direction of each fin structure 12 is aligned with a predetermined
direction. For example, for a bulk silicon substrate, the main
surface 10a of the substrate may have an orientation (100) and the
long axial direction of each fin structure 12 is aligned with a
direction (110), but not limited thereto. In addition to the bulk
silicon substrate, the substrate 10 may be chosen from another
semiconductor substrate such as a silicon containing substrate, a
III-V semiconductor-on-silicon (such as GaAs-on-silicon) substrate,
a graphene-on-silicon substrate, a silicon-on-insulator (SOI)
substrate, a silicon dioxide substrate, an aluminum oxide
substrate, a sapphire substrate, a germanium containing substrate
or an alloy of silicon and germanium substrate.
[0016] More precisely, the method for fabricating the fin
structures 12 may include the following processes, but not limited
thereto. First, a bulk substrate (not shown) is provided and a hard
mask layer (not shown) is formed thereon. The hard mask layer is
then patterned through a photolithographic and an etching process,
so as to define the location for forming fin structures 12 in the
bulk substrate. Afterwards, an etching process is performed to form
fin structures 12 in the bulk substrate. After the above processes,
the fabrication method for the fin structures 12 is complete. In
this case, the fin structures 12 may be regarded as protruding from
the surface 10a of the substrate 10 and the compositions of the fin
structures 12 and the substrate 10 may be the same, such as
monocrystalline silicon. In another case, when the substrate is
chosen from a III-V semiconductor-on-silicon substrate rather than
the above-mentioned bulk silicon substrate, the main compositions
of the fin-shaped structures may be the same as that of the III-V
semiconductor and differ from that of the underlying substrate.
[0017] In this embodiment, an insulating layer 14 is disposed
between every two adjacent fin structures 12, such as a shallow
trench isolation (STI), which can be formed through a STI process
or others suitable processes, it is a well-known technology and
will not be redundantly described here.
[0018] Next, a gate structure 16 is formed on the substrate 10, to
cross over the fin structure 12 and partially covering the fin
structure 12. The method of forming the gate structure 16 may
include the following steps: firstly, forming agate dielectric
material layer (not shown), a gate conductive material layer (not
shown) and a cap material layer (not shown) sequentially. Then, a
patterned photoresist or a patterned mask is used for a protection
layer, an etching step is performed to pattern the gate dielectric
material layer, the gate conductive material layer and the cap
material layer to form a gate structure 16. The gate structure 16
includes a gate dielectric layer 18, a gate conductive layer 20,
and a cap layer 22. The patterned photoresist or the patterned mask
is then removed. The material of the gate dielectric layer 18 may
include silicon oxide (SiO), silicon nitride (SiN), silicon
oxynitride (SiON), or a dielectric material having a dielectric
constant (k value) larger than 4, such as hafnium oxide
(HfO.sub.2), hafnium silicon oxide (HfSiO.sub.4), hafnium silicon
oxynitride (HfSiON), aluminum oxide (Al.sub.2O.sub.3), lanthanum
oxide (La.sub.2O.sub.3), tantalum oxide (Ta.sub.2O.sub.5), yttrium
oxide (Y.sub.2O.sub.3), zirconium oxide (ZrO.sub.2) , strontium
titanate oxide (SrTiO.sub.3) , zirconium silicon oxide
(ZrSiO.sub.4), hafnium zirconium oxide (HfZrO.sub.4), strontium
bismuth tantalate (SrBi.sub.2Ta2O.sub.9, SBT), lead zirconate
titanate (PbZrxTi.sub.1-xO.sub.3, PZT), barium strontium titanate
(BaxSr.sub.1-xTiO.sub.3, BST) or a combination thereof. The
material of the gate conductive layer 20 may include undoped
polysilicon, heavily doped polysilicon, or one or a plurality of
metal layers such as a work function metal layer, a barrier layer
and a low-resistance metal layer, etc. The cap layer 22 may include
a single-layer structure or multi-layer structure made of
dielectric materials such as silicon oxide (SiO), silicon nitride
(SiN), silicon carbide (SiC), silicon carbonitride (SiCN), silicon
oxynitride (SiON) or a combination thereof. In addition, the
present invention may further include a spacer (not shown) on both
sides of the gate structure. For the sake of simplicity, the spacer
is not shown in FIG. 1.
[0019] In this embodiment, the gate dielectric layer 18 of the gate
structure 16 is made of silicon oxide, the gate conductive layer 20
is made of doped polysilicon, and the cap layer 22 includes a
stacking structure having a silicon nitride layer and a silicon
oxide layer, but not limited thereto. The present invention may
also combine with different kinds of metal gate processes such as
gate-first process, high-k first process and gate-last process. In
addition, the current gate structure 16 is made of polysilicon, and
the polysilicon layer can also be replaced by a metal layer by a
subsequent replacement metal gate (RMG) process.
[0020] In addition, the source/drain regions 24 are formed by ion
doping process in the fin structure 12 not covered by the gate
structure 16. In other embodiments, a portion of the fin structure
12 is firstly removed, an epitaxial layer (not shown) is formed by
an epitaxial process or the like, used as the source/drain regions
of the fin transistor. In this embodiment, the ions are directly
doped into parts of fin structure 12, so the source/drain region 24
of the fin structure 12 has a flat top surface 24a. The fin
structure 12, the gate structure 16 and the source/drain regions 24
constitute a fin transistor 1.
[0021] The present invention is characterized in that a resistive
random access memory (RRAM) 30 is formed, and electrically
connected to a source/drain region 24 of the fin transistor 1, as
shown in FIG. 1 and FIG. 2. Since the fin transistor 1 has a
three-dimensional structure, the combination of the RRAM and the
fin transistor can achieve the purpose of reducing the area of the
element. In the first embodiment of the present invention, the RRAM
30 includes a lower electrode layer 32, a resistance switching
layer 34 and an upper electrode layer 36. The material of the lower
electrode layer 32 and the upper electrode layer 36 is, for
example, titanium nitride (TiN), tantalum nitride (TaN), tungsten
nitride (WN), or the like. In some embodiments, the lower electrode
layer 32 or the upper electrode layer 36 is doped polysilicon, such
as P+ doped polysilicon or N+ doped polysilicon. In addition, the
material of the lower electrode layer 32 and the upper electrode
layer 36 may be the same or different, and the present invention is
not limited thereto. The material of the resistance switching layer
34 includes transition metal oxide. The materials that can be used
as the resistance switching layer 34 include titanium oxide (TiO),
nickel oxide (NiO), tungsten oxide (WO.sub.3), zirconium oxide
(ZrO), copper oxide (CuO), hafnium oxide (HfO), tantalum oxide
(TaO), zinc oxide (ZnO), aluminum oxide (Al.sub.2O.sub.3),
molybdenum oxide (MoO), and the like, but are not limited thereto.
Inmost embodiments, the thickness of the resistance switching layer
34 is between 20 angstroms to 100 angstroms. In some embodiments,
the thickness of the resistance switching layer 34 is from 30
angstroms to 70 angstroms, such as 50 angstroms. It should be noted
that the material of the resistance switching layer 34 can be the
same as that of the gate dielectric layer 18 of the gate structure
16. That is, during the manufacturing process, the gate dielectric
layer 18 and the resistance switching layer 34 can be made in the
same process to save process steps. However, the present invention
is not limited thereto.
[0022] In addition, in some embodiments, since the source/drain
region 24 is conductive, the source/drain region 24 may be used
instead of the lower electrode of the RRAM 30. In other words, the
lower electrode layer 32 of the RRAM 30 may be omitted. It should
also be within the scope of the present invention.
[0023] The following description will detail the different
embodiments of the semiconductor structure and the manufacturing
method of the present invention. To simplify the description, the
following description will detail the dissimilarities among the
different embodiments and the identical features will not be
redundantly described. In order to compare the differences between
the embodiments easily, the identical components in each of the
following embodiments are marked with identical symbols.
[0024] Please refer to FIG. 3, which illustrates a cross-sectional
view of a semiconductor structure according to a second preferred
embodiment of the present invention. In this embodiment, a fin
transistor and a RRAM are also formed. The difference between this
embodiment and the embodiment mentioned above is that in this
embodiment, part of the fin structure is replaced by an epitaxial
layer, and the epitaxial layer is used as the source/drain region
of the fin transistor. More precisely, as shown in FIG. 2, after
the gate structure is completed, a portion of the fin structures
not covered by the gate structure is removed to form recesses on
both sides of the gate structure, and then an epitaxial process is
performed, to form an epitaxial layer 40 in each recess. According
to different embodiments, the epitaxial layer 40 may comprise a
silicon germanium epitaxial layer, which is used fora PMOS
transistor, or the epitaxial layer 40 may comprise a silicon carbon
epitaxial layer, which used for an NMOS transistor. An ion
implantation process is then performed to implant the appropriate
ions, or the implantation process may be performed during the
epitaxial process. Thus, the epitaxial layer 40 can be used as a
source/drain region. After the epitaxial layer 40 is formed, a
silicide process (or a salicide process, not shown) may be
performed to form silicide in the source/drain region, the silicide
process may include a pre-clean process, a metal depositing
process, an annealing process, a selective etching process, or a
test process, etc.
[0025] The epitaxial layer 40 will grow along the lattice plane,
and may have a polygonal cross-sectional structure. For example,
the epitaxial layer 40 in this embodiment includes an upper
inclined surface 40a and a lower inclined surface 40b. The upper
inclined surface 40a is disposed along the [111] plane, and the
lower inclined surface 40b is also disposed along the [111] plane.
After the epitaxial layer 40 is formed, the RRAM 30 is formed on
the epitaxial layer 40. In this embodiment, the RRAM 30 is formed
along the surface of the epitaxial layer 40. The RRAM 30 also
includes the lower electrode layer 32, the resistance switching
layer 34 and the upper electrode layer 36. The material of each
material layer is the same as that described in the first preferred
embodiment, which will not be redundantly described herein.
[0026] Please refer to FIG. 4 and FIG. 5, which illustrate the
cross-sectional views of the semiconductor structure of the third
preferred embodiment of the present invention. In this embodiment,
the fin structure 12 is remained to use as the source/drain region
24 of the fin transistor. However, after the source/drain region 24
is completed, as shown in FIG. 4, a dielectric layer 50 is formed
to cover the fin transistor, and then a contact hole 52 is formed
in the dielectric layer 50, to expose a portion of the source/drain
region 24. Next, as shown in FIG. 5, a lower electrode layer 32', a
resistance switching layer 34' and an upper electrode layer 36' are
sequentially formed in the contact hole 52. The lower electrode
layer 32', the resistance switching layer 34' and the upper
electrode layer 36' constitute a RRAM 30'. In other words, the RRAM
30'in the present embodiment is formed in the contact hole 52.
Regarding the material of the lower electrode layer 32', the
material of the resistance switching layer 34' and the material of
the upper electrode layer 36' are the same as that of the lower
electrode layer 32, the resistance switching layer 34 and the upper
electrode layer 36 described in the above first preferred
embodiment respectively, and it will not be described again
here.
[0027] Please refer to FIG. 6, which illustrates a cross-sectional
view of a semiconductor structure of a fourth preferred embodiment
of the present invention. This embodiment is similar to the above
mentioned third preferred embodiment, the RRAM is also formed in
the contact hole. The difference between this embodiment and the
above third preferred embodiment is that a portion of the fin
structure is replaced by the epitaxial layer 40, and the epitaxial
layer 40 is used as the source/drain regions of the fin transistor.
The contact hole exposes the epitaxial layer 40, and then the RRAM
30' is then formed in the contact hole, the epitaxial layer 40 has
a non-planar top surface, and the RRAM 30' directly contacts the
non-planar top surface of the epitaxial layer 40. The other
features are the same as those in the other embodiments described
above, which will not be repeated here.
[0028] In subsequent steps, a contact structure, such as a pole
contact structure or a slot contact structure, may be formed to
electrically connect the RRAM and the fin transistor. FIG. 7 is a
schematic diagram of the semiconductor structure connecting a slot
contact structure according to the first preferred embodiment of
the present invention. As shown in FIG. 7, after the RRAM and the
fin transistor are completed (refer to FIG. 1), slot contact
structures 62 are formed to cross the RRAM 30 and a portion of the
fin structure 12. Besides, the slot contact structure 62 may
further cross other fin structure (not shown) adjacent to the fin
structure 12. In addition, in other embodiments, a pole contact
structure may be used to replace the slot contact to electrically
connect the RRAM or the fin transistor.
[0029] The present invention is characterized in that a fin
transistor and a RRAM are combined with each other, and in
particular, the RRAM is directly fabricated on the fin structure or
on the epitaxial layer of the fin transistor, electrically
connected to the source/drain regions of the fin transistor. Since
the fin transistor has three-dimensional structure, the overall
size of the semiconductor device can be reduced by integrating the
RRAM and the fin transistor.
[0030] Those skilled in the art will readily observe that numerous
modifications and alterations of the device and method may be made
while retaining the teachings of the invention. Accordingly, the
above disclosure should be construed as limited only by the metes
and bounds of the appended claims.
* * * * *